JPH08250281A - Luminescent element and displaying apparatus - Google Patents
Luminescent element and displaying apparatusInfo
- Publication number
- JPH08250281A JPH08250281A JP7048498A JP4849895A JPH08250281A JP H08250281 A JPH08250281 A JP H08250281A JP 7048498 A JP7048498 A JP 7048498A JP 4849895 A JP4849895 A JP 4849895A JP H08250281 A JPH08250281 A JP H08250281A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- emitting body
- ultraviolet
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F13/00—Illuminated signs; Luminous advertising
- G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
- G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
Landscapes
- Electroluminescent Light Sources (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は発光素子に関し、特にエ
レクトロルミネッセンス（ＥＬ），ホトルミネッセンス
（ＰＬ）技術に属し、ＥＬディスプレイ，プラズマディ
スプレイ，ＣＲＴなどの表示装置や光源に利用されるも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting element, and more particularly to an electroluminescence (EL) and photoluminescence (PL) technique, which is used for a display device such as an EL display, a plasma display, a CRT and a light source. .
【０００２】[0002]
【従来の技術】従来、ＥＬ素子は、図５に示すように発
光体（蛍光体）51を２つの電極52，53で挟んだ構造をし
ている。これらの電極52，53間に直流または交流電圧を
加えて、発光体51内に電界を発生させることによって電
子を加速し、発光体１中に添加されている発光中心を衝
突励起する（例えば、「エレクトロルミネセントディス
プレイ」猪口敏夫著，産業図書）。従って、発光体51
は、発光強度（輝度）は発光波長（色）などの光学的特
性だけでなく、電子加速（ホットエレクトロンの生成）
等の電気的特性をも満たしていなければならず、現在の
ところ、実用に至っている発光体はＺｎＳ：Ｍｎだけで
ある。2. Description of the Related Art Conventionally, an EL element has a structure in which a light emitting body (phosphor) 51 is sandwiched between two electrodes 52 and 53 as shown in FIG. DC or AC voltage is applied between these electrodes 52 and 53 to generate an electric field in the light-emitting body 51 to accelerate electrons and collide-excite the emission center added in the light-emitting body 1 (for example, "Electroluminescent Display" by Toshio Inoguchi, Industrial Books). Therefore, the luminous body 51
Is not only optical characteristics such as emission intensity (brightness) and emission wavelength (color), but also electron acceleration (generation of hot electrons)
ZnS: Mn is the only luminescent material that has been put into practical use at present.
【０００３】[0003]
【発明が解決しようとする課題】従来技術では、光学的
及び電気的特性の両方を満足する発光体しか発光素子に
応用することができない。本発明はこうした事情を考慮
してなされたもので、光学的特性のみを満たす発光体で
あっても素子化できる発光素子及びこれを用いた表示装
置を提供することを目的とする。In the prior art, only a light emitting body satisfying both optical and electrical characteristics can be applied to a light emitting device. The present invention has been made in view of these circumstances, and an object thereof is to provide a light emitting element that can be made into an element even if it is a light emitting body that satisfies only optical characteristics, and a display device using the same.
【０００４】[0004]
【課題を解決するための手段】本願第１の発明は、４０
０ｎｍよりも短い波長の光を放射する固体素子と、その
波長よりも長い波長の光を放射する発光体とを具備する
ことを特徴とする発光素子である。The first invention of the present application is 40
It is a light-emitting element comprising a solid-state element that emits light having a wavelength shorter than 0 nm and a light-emitting body that emits light having a wavelength longer than that wavelength.
【０００５】本願第２の発明は、ＺｎＯ紫外発光層と、
この紫外発光層上に設けられたＺｎＳ障壁層と、この障
壁層上に形成された透明電極と、この透明電極上に設け
られた発光体とを具備することを特徴とする発光素子で
ある。本願第３の発明は、前記発光素子をマトリクス状
に配置して文字及び／又は映像情報を表示することを特
徴とする表示装置である。A second invention of the present application is a ZnO ultraviolet light emitting layer,
A light emitting device comprising a ZnS barrier layer provided on the ultraviolet light emitting layer, a transparent electrode formed on the barrier layer, and a light emitting body provided on the transparent electrode. A third invention of the present application is a display device characterized in that the light emitting elements are arranged in a matrix to display characters and / or video information.
【０００６】[0006]
【作用】この発明においては、固体発光素子から放射さ
れた光が発光体を励起し、発光させる。従って、発光体
を紫外光で励起するので、発光体に様々な種類のものを
用いても、その電気的特性によらず、発光させることが
できる。In the present invention, the light emitted from the solid state light emitting element excites the light emitting body to emit light. Therefore, since the light-emitting body is excited by the ultraviolet light, even if various kinds of light-emitting bodies are used, the light-emitting body can emit light regardless of its electrical characteristics.
【０００７】また、例えば図６のようにマトリックス状
に配した紫外発光素子を個々に駆動することで、各々の
素子に対応した各発光体を励起する。従って、紫外発光
素子と発光体とからなる発光素子を選択的に発光させる
ことで、文字及び／又は映像情報を表示させることがで
きる。Further, for example, by driving the ultraviolet light emitting elements arranged in a matrix as shown in FIG. 6, each light emitting body corresponding to each element is excited. Therefore, it is possible to display characters and / or video information by selectively causing the light emitting element including the ultraviolet light emitting element and the light emitting body to emit light.
【０００８】[0008]
【実施例】以下、本発明の実施例について図面を参照し
て説明する。 （実施例１）図１を参照する。図中の符号１は、透明電
極２と電極３により挟まれ、４００nmよりも短い波長の
光を放射する紫外発光素子（固体素子）である。前記透
明電極２の上方には、発光体（蛍光体）４が配置されて
いる。Embodiments of the present invention will be described below with reference to the drawings. Example 1 Reference is made to FIG. Reference numeral 1 in the figure is an ultraviolet light emitting element (solid-state element) which is sandwiched between the transparent electrode 2 and the electrode 3 and emits light having a wavelength shorter than 400 nm. A light-emitting body (phosphor) 4 is arranged above the transparent electrode 2.
【０００９】こうした構成の発光素子において、透明電
極２と電極３間に電界を印加して、紫外光を透明電極２
を通して放射する。放射された紫外光は、放射方向に配
置されている発光体４で吸収（励起）され、発光体４は
紫外光より波長の長い可視光を発する。そして、発光体
４の種類を変えることで、発光波長、即ち、発光色を変
えることができる。例えば、発光体４として、石英ガラ
ス基板上に基板温度４９０℃でＣｄＭｏＯ4 薄膜を成膜
したものを用いると、閉殻遷移金属錯イオンの発光スペ
クトルは可視波長域にブロードな形状で生じるので、４
８０nm付近にピークを有する白色光を得ることができ
る。また、ＣｄＷＯ4 では、４４０nm付近にピークを有
する白色光となる。In the light emitting device having such a structure, an electric field is applied between the transparent electrode 2 and the electrode 3 to emit ultraviolet light to the transparent electrode 2.
Radiate through. The emitted ultraviolet light is absorbed (excited) by the light emitter 4 arranged in the emission direction, and the light emitter 4 emits visible light having a wavelength longer than that of the ultraviolet light. Then, the emission wavelength, that is, the emission color can be changed by changing the type of the light emitter 4. For example, when the CdMoO 4 thin film formed on a quartz glass substrate at a substrate temperature of 490 ° C. is used as the light emitter 4, the emission spectrum of the closed-shell transition metal complex ion is broad in the visible wavelength range.
White light having a peak near 80 nm can be obtained. Further, CdWO 4 produces white light having a peak near 440 nm.
【００１０】（実施例２）図２を参照する。図中の符号
21は、ＺｎＯ紫外発光層21ａとＺｎＳ障壁層21ｂから構
成されたバンドギャップが３ｅＶ以上の紫外発光素子で
ある。前記紫外発光素子21上には透明電極22，発光体23
が形成され、紫外発光素子21の裏面には電極24が形成さ
れている。(Second Embodiment) Referring to FIG. Symbols in the figure
Reference numeral 21 is an ultraviolet light emitting device having a band gap of 3 eV or more, which is composed of a ZnO ultraviolet light emitting layer 21a and a ZnS barrier layer 21b. A transparent electrode 22 and a light emitting body 23 are provided on the ultraviolet light emitting device 21.
And an electrode 24 is formed on the back surface of the ultraviolet light emitting element 21.
【００１１】こうした構成の発光素子において、前記紫
外発光層21ａと障壁層21ｂの界面でＺｎＯのバンド間遷
移発光（発光波長約３８０nm）が生じる。この光が透明
電極22上に形成された発光体23（例えば、ＺｎＳ：Ｍ
ｎ）の発光中心（Ｍｎ）を励起する。その結果、発光体
23は発光（Ｍｎの場合は黄澄色）する。また、発光体23
にＺｎＯ：Ｚｎを用いると緑色に発光する。In the light emitting device having such a structure, band-to-band transition emission of ZnO (emission wavelength of about 380 nm) occurs at the interface between the ultraviolet light emitting layer 21a and the barrier layer 21b. This light is formed on the transparent electrode 22 by a light-emitting body 23 (for example, ZnS: M
Excitation of the emission center (Mn) of n). As a result, the luminous body
23 emits light (yellowish color in the case of Mn). Also, the luminous body 23
When ZnO: Zn is used as the material, green light is emitted.
【００１２】（実施例３）図３を参照する。図中の符号
31は、ＺｎＯ紫外発光層31ａとＺｎＳ障壁層31ｂから構
成された紫外発光素子である。前記紫外発光素子31上に
は発光体32，透明電極33が形成され、紫外発光素子31の
裏面には電極34が形成されている。(Embodiment 3) Referring to FIG. Symbols in the figure
Reference numeral 31 is an ultraviolet light emitting element composed of a ZnO ultraviolet light emitting layer 31a and a ZnS barrier layer 31b. A light emitting body 32 and a transparent electrode 33 are formed on the ultraviolet light emitting element 31, and an electrode 34 is formed on the back surface of the ultraviolet light emitting element 31.
【００１３】こうした構成の発光素子において、透明電
極33の材質としては、ＳｎＯ2 又はＩＴＯ（インジウム
−錫酸化物）が一般的であるが、これらの材質では紫外
光に対する吸収が大きい。よって、透明電極33を最上層
に形成することで、効率良く発光体32を励起できる。In the light emitting device having such a structure, SnO 2 or ITO (Indium-Tin Oxide) is generally used as the material of the transparent electrode 33, but these materials absorb a large amount of ultraviolet light. Therefore, the light emitting body 32 can be efficiently excited by forming the transparent electrode 33 on the uppermost layer.
【００１４】（実施例４）図４を参照する。図中の符号
41は、ＺｎＯ紫外発光層41ａとＺｎＳ障壁層41ｂから構
成された紫外発光素子である。前記紫外発光素子41上に
は発光電極42が形成され、紫外発光素子41の裏面には電
極43が形成されている。(Embodiment 4) Referring to FIG. Symbols in the figure
Reference numeral 41 is an ultraviolet light emitting element composed of a ZnO ultraviolet light emitting layer 41a and a ZnS barrier layer 41b. A light emitting electrode 42 is formed on the ultraviolet light emitting element 41, and an electrode 43 is formed on the back surface of the ultraviolet light emitting element 41.
【００１５】こうした構成の発光素子において、発光電
極42の材質としては、ＳｎＯ2 又はＩＴＯ等の透明導電
性物質に発光中心となる希土類イオン（Ｅｕ，Ｔｍ等）
を添加したものを用いる。そして、発光電極42と電極43
の間に電界を印加して紫外光を発生させ、その紫外光に
よって発光中心を励起する。In the light emitting device having such a structure, the light emitting electrode 42 is made of a transparent conductive material such as SnO 2 or ITO, and rare earth ions (Eu, Tm, etc.) serving as an emission center.
Is used. Then, the light emitting electrode 42 and the electrode 43
An electric field is applied between the two to generate ultraviolet light, and the luminescence center is excited by the ultraviolet light.
【００１６】上記実施例４によれば、電極と発光体とを
同一物質で構成するので、製造コストを低減できる。ま
た、発光層が最上層となり、取り出し効率が向上するの
で、高輝度発光素子を作製することができる。According to the fourth embodiment, since the electrode and the light emitting body are made of the same material, the manufacturing cost can be reduced. Further, since the light emitting layer is the uppermost layer and the extraction efficiency is improved, a high brightness light emitting element can be manufactured.
【００１７】（実施例５）図６（Ａ），（Ｂ）を参照す
る。但し、図６（Ａ）はこの実施例５に係る表示装置の
一部を展開した説明図、図６（Ｂ）は一体化した説明図
である。(Embodiment 5) Reference will be made to FIGS. 6 (A) and 6 (B). However, FIG. 6A is an explanatory diagram in which a part of the display device according to the fifth embodiment is developed, and FIG. 6B is an integrated explanatory diagram.
【００１８】図中の符号61はマトリクス状に作製された
紫外発光素子で、それらの素子61は個々に独立して駆動
できるように配線されている。この紫外発光素子61の裏
面には、電極62が形成されている。前記紫外発光素子61
上には、仕切り板63間に複数の透明電極64が配置されて
いる。前記仕切り板63上には、下面に複数の発光体65
ａ，65ｂ，65ｃが前記紫外発光素子に対応してマトリッ
クス状に作製された透明基板66が設けられている。ここ
で、前記発光体64ａ，64ｂ，64ｃは、前記透明電極64と
向い合うように配置されている。Reference numeral 61 in the figure denotes an ultraviolet light emitting element formed in a matrix, and these elements 61 are wired so that they can be driven independently. An electrode 62 is formed on the back surface of the ultraviolet light emitting element 61. The ultraviolet light emitting device 61
A plurality of transparent electrodes 64 are arranged above the partition plates 63. A plurality of light emitters 65 are provided on the lower surface of the partition plate 63.
A transparent substrate 66, in which a, 65b and 65c are formed in a matrix corresponding to the ultraviolet light emitting element, is provided. Here, the light emitting bodies 64a, 64b, 64c are arranged so as to face the transparent electrode 64.
【００１９】この表示装置において、紫外発光素子61を
選択的に駆動させると、文字や映像が表示される。以上
詳細に説明したが、本出願には以下の発明が含まれる。In this display device, when the ultraviolet light emitting element 61 is selectively driven, characters and images are displayed. Although described in detail above, the present invention includes the following inventions.
【００２０】１．(i) 固体発光素子を用いて発光させた
４００nmよりも短い波長の光で、発光体（蛍光体）を発
光させる（ホトルミネッセンス）ことを特徴とする発光
素子。1. (i) A light-emitting device characterized by causing a light-emitting body (phosphor) to emit light (photoluminescence) with light having a wavelength shorter than 400 nm which is emitted using a solid-state light-emitting device.
【００２１】(ii)４００nmよりも短い波長の光を放射す
る固体素子と、その波長よりも長い波長の光を放射する
発光体とを具備することを特徴とする発光素子。 (iii) ＺｎＯ紫外発光層（Ｓ）と、この紫外発光層上に
設けられたＺｎＳ障壁層（Ｉ）と、この障壁層上に形成
された透明電極（Ｍ）と、この透明電極上に設けられた
発光体とを具備することを特徴とする発光素子。(Ii) A light-emitting device comprising a solid-state device that emits light having a wavelength shorter than 400 nm and a light-emitting body that emits light having a wavelength longer than that wavelength. (iii) ZnO ultraviolet emitting layer (S), ZnS barrier layer (I) provided on this ultraviolet emitting layer, transparent electrode (M) formed on this barrier layer, and provided on this transparent electrode A light-emitting element comprising:
【００２２】(iV)Ｍ（発光電極）Ｉ（ＺｎＳ障壁層）Ｓ
（ＺｎＯ紫外発光層）構造を有する発光素子。 （構成） 実施例１〜４が該当する（但し、実施例１の
符番のみを用いて説明する）。４００nmよりも短い波長
の紫外光を放射する固体素子（１，２，３）とその素子
から放射された紫外光が照射される位置に配した発光体
４とで構成される。電極２については必ずしも透明であ
る必要はなく、この場合は放射された紫外光は基板と平
行方向に取り出し、発光体４も平行方向に位置する。(IV) M (light emitting electrode) I (ZnS barrier layer) S
A light emitting device having a (ZnO ultraviolet light emitting layer) structure. (Structure) Examples 1 to 4 are applicable (however, description will be given using only the reference numerals of Example 1). It is composed of solid-state elements (1, 2, 3) that emit ultraviolet light having a wavelength shorter than 400 nm and a light-emitting body 4 arranged at a position where the ultraviolet light emitted from the elements is irradiated. The electrode 2 does not necessarily need to be transparent. In this case, the emitted ultraviolet light is extracted in the direction parallel to the substrate, and the light emitting body 4 is also positioned in the parallel direction.
【００２３】（作用） 固体発光素子から放射された光
が、発光体４を励起し、発光させる。 （効果） 発光体４を紫外光で励起するので、発光体４
に様々な種類のものを用いても、その電気的特性によら
ず、発光させることができる。(Operation) The light emitted from the solid state light emitting element excites the light emitting body 4 to emit light. (Effect) Since the light-emitting body 4 is excited by ultraviolet light, the light-emitting body 4 is excited.
Even if various kinds of materials are used, light can be emitted regardless of the electrical characteristics.
【００２４】２．(i) 上記第１項の(i),（ii）におい
て、４００nmよりも短い波長の光を放射する固体素子が
バンドギャップが３ｅＶ以上の半導体で作製されている
ことを特徴とする発光素子。2. (i) A light-emitting device as described in (i) or (ii) of the above item 1, wherein the solid-state device that emits light having a wavelength shorter than 400 nm is made of a semiconductor having a band gap of 3 eV or more.
【００２５】(ii)上記第１項の(i) において、３ｅＶ以
上のバンドギャップを有する半導体が、酸化亜鉛または
硫化亜鉛を主成分とする材料で構成されている発光素
子。 (iii) 上記第１項の(iii) の発光素子。(Ii) A light emitting device according to item (i) of the above item 1, wherein the semiconductor having a band gap of 3 eV or more is made of a material containing zinc oxide or zinc sulfide as a main component. (iii) The light emitting device according to the above item (iii).
【００２６】(iV) 上記第１項の(iV)の発光素子。 （構成） 実施例１〜４が該当する。紫外発光素子１
（又は21，31，41）に、バンドギャップが３ｅＶ以上あ
るＺｎＯなどの酸化物半導体またはＺｎＳなどの硫化物
半導体材料を用いる。(IV) The light emitting device of (iV) in the above item 1. (Structure) Examples 1-4 correspond. UV light emitting element 1
For (or 21, 31, 41), an oxide semiconductor such as ZnO or a sulfide semiconductor material such as ZnS having a band gap of 3 eV or more is used.
【００２７】（作用） バンドギャップが３ｅＶ以上あ
るので、その半導体材料からのバンド間遷移発光は４０
０nm以下の波長となり、その光で発光体４（又は23，3
3）を励起する。(Function) Since the band gap is 3 eV or more, the inter-band transition light emission from the semiconductor material is 40
The wavelength becomes 0 nm or less, and the light emits light 4 (or 23,3).
3) is excited.
【００２８】（効果） バンドギャップが３ｅＶ以上の
半導体を用いることで、紫外光放射に高発光効率のバン
ド間遷移発光を用いることができる。従って、発光体４
（又は23，33）を紫外光で励起でき、高輝度発光素子を
作製することができる。(Effect) By using a semiconductor having a band gap of 3 eV or more, it is possible to use interband transition emission with high emission efficiency for ultraviolet light emission. Therefore, the luminous body 4
(Or 23, 33) can be excited by ultraviolet light, and a high-luminance light emitting device can be manufactured.
【００２９】３．(i) 上記第１項の(i) ，(ii)におい
て、発光体が酸化亜鉛または硫化亜鉛を主成分とする材
料で構成されている発光素子。 (ii)上記第１項の(iii) の発光素子。3. (i) A light-emitting device according to the above-mentioned item (i) or (ii), wherein the light-emitting body is made of a material containing zinc oxide or zinc sulfide as a main component. (ii) The light emitting device according to item (iii) of item 1 above.
【００３０】（構成） 実施例２，３が該当する。発光
体（23又は32）にＺｎＯまたはＺｎＳに遷移金属錯イオ
ンや希土類イオンを発光中心として添加した材料を用い
る。 （作用） ＺｎＯやＺｎＳ中に添加された発光中心が紫
外光によって励起され発光する。(Structure) Examples 2 and 3 are applicable. A material obtained by adding a transition metal complex ion or a rare earth ion as an emission center to ZnO or ZnS is used for the light emitting body (23 or 32). (Operation) The emission center added to ZnO or ZnS is excited by ultraviolet light to emit light.
【００３１】（効果） 半導体であるＺｎＯやＺｎＳ
は、紫外発光素子21（又は31）の材料としても使用で
き、かつ発光体23（又は32）の材料としても使用できる
ので、発光体23（又は32）と紫外発光素子21（又は31）
の一体化が可能であり、小型（薄型）化及び低コスト化
ができる。(Effect) ZnO and ZnS which are semiconductors
Can be used as a material for the ultraviolet light emitting element 21 (or 31) and also as a material for the light emitting body 23 (or 32). Therefore, the light emitting body 23 (or 32) and the ultraviolet light emitting element 21 (or 31) can be used.
Can be integrated, and downsizing (thinness) and cost reduction can be achieved.
【００３２】４．(i) 上記第１項の(i) ，(ii)におい
て、発光体が閉殻遷移金属錯イオン化合物である発光素
子。 (ii)上記第１項の(iii) の発光素子。4. (i) A light-emitting device according to the above-mentioned item (i) or (ii), wherein the light-emitting body is a closed-shell transition metal complex ion compound. (ii) The light emitting device according to item (iii) of item 1 above.
【００３３】（構成） 実施例１〜３が該当する。発光
体４（又は23，32）として、ＣｄＭｏＯ4 ，ＣｄＷＯ4
等の閉殻遷移金属錯イオン（ＭｏＯ4 2-，ＷＯ4 2-な
ど）を含んだ化合物を用いる。(Structure) Examples 1 to 3 are applicable. As the luminous body 4 (or 23, 32), CdMoO 4 , CdWO 4 is used.
Compounds containing closed shell transition metal complex ions such as MoO 4 2− and WO 4 2− are used.
【００３４】（作用） 閉殻遷移金属錯イオンを紫外光
で励起し、発光させる。 （効果） 閉殻遷移金属錯イオンの発光スペクトルは、
可視波長域にブロードな形状で生じるので、この発光体
を用いることで白色発光素子を作製することができる。(Operation) The closed-shell transition metal complex ion is excited by ultraviolet light to emit light. (Effect) The emission spectrum of the closed-shell transition metal complex ion is
Since it is generated in a broad shape in the visible wavelength range, a white light emitting element can be manufactured by using this light emitting body.
【００３５】５．上記第４項の(i) の閉殻遷移金属錯イ
オン化合物が、基板を加熱した状態で作製されたことを
特徴とする薄膜製造方法。 （構成） 閉殻遷移金属錯イオン化合物を用いた発光体
を、紫外発光素子の透明電極上に透明基板（例えばガラ
ス基板）上に、基板を加熱した状態で真空蒸着する。例
えば、ＣｄＭｏＯ4 薄膜では、４９０℃付近の基板温度
（成膜温度）で良好な薄膜を作製できる。5. A method for producing a thin film, wherein the closed shell transition metal complex ion compound of (i) in the above item 4 is produced in a state where a substrate is heated. (Structure) A light-emitting body using a closed-shell transition metal complex ion compound is vacuum-deposited on a transparent electrode of an ultraviolet light-emitting device on a transparent substrate (for example, a glass substrate) while heating the substrate. For example, with a CdMoO 4 thin film, a good thin film can be formed at a substrate temperature (film forming temperature) near 490 ° C.
【００３６】（作用） 成膜時に基板を加熱すること
で、成膜表面における反応（Ｃｄ＋ＭｏＯ3 ＋1/2 Ｏ2
→ＣｄＭｏＯ4 ）が促進される。 （効果） 基板を加熱して成膜表面での上記反応を促進
することにより、閉殻遷移金属が十分にイオン化した発
光体薄膜を得ることができ、それを利用した高輝度発光
素子が作製できる。(Operation) By heating the substrate during film formation, the reaction (Cd + MoO 3 +1/2 O 2 ) on the film formation surface is performed.
→ CdMoO 4 ) is promoted. (Effect) By heating the substrate to promote the above reaction on the film-forming surface, it is possible to obtain a luminous body thin film in which the closed shell transition metal is sufficiently ionized, and it is possible to manufacture a high-luminance light-emitting device using the thin film.
【００３７】６．(i) 上記第１項の(i) ，(ii)におい
て、発光体が電極としても機能することを特徴とする発
光素子。 (ii)上記第６項の(i) において、発光体がインジウムと
錫の複合酸化物または錫酸化物を主成分とした材料で構
成されている発光素子。6. (i) A light emitting device as described in (i) and (ii) of the above item 1, wherein the light emitting body also functions as an electrode. (ii) A light-emitting device according to item (i) of item 6 above, wherein the light-emitting body is composed of a composite oxide of indium and tin or a material containing tin oxide as a main component.
【００３８】(iii) 上記第１項の(iV)の発光素子。 （構成） 実施例４が該当する。紫外発光素子41を駆動
させるための電極の代わりに、透明導電性物質に遷移金
属イオン，希土類イオン，閉殻遷移金属錯イオンなどの
発光中心を添加した材料を用いる。透明導電性物質とし
ては、ＳｎＯ2（酸化錫）やＩＴＯ（インジウムと錫の
酸化物）等がある。(Iii) The light emitting device of the above item (iV). (Structure) Example 4 is applicable. Instead of the electrode for driving the ultraviolet light emitting element 41, a material in which a luminescent center such as a transition metal ion, a rare earth ion or a closed shell transition metal complex ion is added to a transparent conductive material is used. Examples of the transparent conductive material include SnO 2 (tin oxide) and ITO (oxide of indium and tin).
【００３９】（作用） 上記に示した材料では、導電性
を有するため電極として、かつ発光中心を含んでいるた
め発光体としても機能する。 （効果） 電極と発光体とを同一物質で構成すること
で、製造コストが低減できる。又、発光層が最上層とな
り、取り出し効率が向上するので、高輝度発光素子を作
製することができる。(Function) The materials shown above function as an electrode because they have conductivity, and also as a light emitter because they contain a luminescence center. (Effect) By forming the electrode and the light emitting body from the same material, the manufacturing cost can be reduced. Further, since the light emitting layer is the uppermost layer and the extraction efficiency is improved, a high brightness light emitting device can be manufactured.
【００４０】７．前記発光素子をマトリクス状に配置し
て文字及び／又は映像情報を表示することを特徴とする
表示装置（ディスプレイ）。 （構成） 実施例５が該当する。独立して駆動すること
ができる紫外発光素子61がマトリックス状に並べられて
おり、各々の素子に対応しては発光体65ａ，65ｂ，65ｃ
が備わっている。この発光体は同種（同色発光）であっ
ても、異種（異色発光）であっても良い。7. A display device, wherein the light emitting elements are arranged in a matrix to display characters and / or video information. (Structure) Example 5 corresponds. The ultraviolet light emitting elements 61 that can be independently driven are arranged in a matrix, and the light emitting bodies 65a, 65b, 65c are arranged corresponding to the respective elements.
Is equipped with. This light-emitting body may be of the same type (light emission of the same color) or different types (light emission of different colors).
【００４１】（作用） マトリックス状に配した紫外発
光素子61を個々に駆動することで、各々の素子に対応し
た発光体65ａ，65ｂ，65ｃを励起する。 （効果）紫外発光素子61と発光体65ａ，65ｂ，65ｃとか
らなる発光素子を選択的に発光させることで、文字及び
／又は映像情報を表示させることができる。(Operation) By individually driving the ultraviolet light emitting elements 61 arranged in a matrix, the light emitting bodies 65a, 65b, 65c corresponding to the respective elements are excited. (Effect) Characters and / or video information can be displayed by selectively emitting light from the light emitting element including the ultraviolet light emitting element 61 and the light emitters 65a, 65b, 65c.
【００４２】[0042]
【発明の効果】以上詳述したようにこの発明によれば、
光学的特性のみを満たす発光体であっても素子化できる
発光素子及びこれを用いた表示装置を提供できる。As described above in detail, according to the present invention,
It is possible to provide a light emitting element that can be made into an element even if it is a light emitting body that satisfies only optical characteristics, and a display device using the same.
【図１】本発明の実施例１に係る発光素子の説明図。FIG. 1 is an explanatory diagram of a light emitting device according to a first embodiment of the invention.
【図２】本発明の実施例２に係る発光素子の説明図。FIG. 2 is an explanatory diagram of a light emitting device according to a second embodiment of the invention.
【図３】本発明の実施例３に係る発光素子の説明図。FIG. 3 is an explanatory diagram of a light emitting device according to a third embodiment of the invention.
【図４】本発明の実施例４に係る発光素子の説明図。FIG. 4 is an explanatory diagram of a light emitting device according to a fourth embodiment of the invention.
【図５】従来の発光素子の説明図。FIG. 5 is an explanatory diagram of a conventional light emitting element.
【図６】本発明の実施例５に係る表示装置の説明図で、
図６（Ａ）はこの表示装置の一部を展開した説明図、図
６（Ｂ）は一体化した説明図。FIG. 6 is an explanatory diagram of a display device according to a fifth embodiment of the invention,
FIG. 6A is an explanatory view in which a part of this display device is developed, and FIG. 6B is an integrated illustration view.
１，21，31，41，61…紫外線発光素子、 ２，22，33，
64…透明電極 ３，24，34，43，62…電極、 ４，22，32，
65ａ〜65ｃ…発光体、63…仕切り板。1, 21, 31, 41, 61 ... Ultraviolet light emitting element, 2, 22, 33,
64 ... Transparent electrode 3,24, 34, 43, 62 ... Electrode, 4, 22, 32,
65a to 65c ... luminous body, 63 ... partition plate.
Claims (3)
る固体素子と、その波長よりも長い波長の光を放射する
発光体とを具備することを特徴とする発光素子。1. A light-emitting device comprising a solid-state device that emits light having a wavelength shorter than 400 nm and a light-emitting body that emits light having a wavelength longer than that wavelength.
に設けられたＺｎＳ障壁層と、この障壁層上に形成され
た透明電極と、この透明電極上に設けられた発光体とを
具備することを特徴とする発光素子。2. A ZnO ultraviolet light emitting layer, a ZnS barrier layer provided on the ultraviolet light emitting layer, a transparent electrode formed on the barrier layer, and a light emitting body provided on the transparent electrode. A light emitting element characterized by being.
文字及び／又は映像情報を表示することを特徴とする請
求項１又は請求項２記載の表示装置。3. The display device according to claim 1, wherein the light emitting elements are arranged in a matrix to display characters and / or video information.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7048498A JPH08250281A (en) | 1995-03-08 | 1995-03-08 | Luminescent element and displaying apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7048498A JPH08250281A (en) | 1995-03-08 | 1995-03-08 | Luminescent element and displaying apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08250281A true JPH08250281A (en) | 1996-09-27 |
Family
ID=12805055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7048498A Withdrawn JPH08250281A (en) | 1995-03-08 | 1995-03-08 | Luminescent element and displaying apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08250281A (en) |
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| US8860058B2 (en) | 1996-03-26 | 2014-10-14 | Cree, Inc. | Solid state white light emitter and display using same |
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-
1995
- 1995-03-08 JP JP7048498A patent/JPH08250281A/en not_active Withdrawn
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| WO2005004546A1 (en) * | 2003-07-02 | 2005-01-13 | Matsushita Electric Industrial Co., Ltd. | Electroluminescent device and display |
| JP2008502102A (en) * | 2004-06-04 | 2008-01-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | LED having electroluminescent structure and EL structure |
| KR101303372B1 (en) * | 2004-06-04 | 2013-09-03 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | Electroluminescent structure and led with an el structure |
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