JPH056949A - Heat sink - Google Patents
Heat sinkInfo
- Publication number
- JPH056949A JPH056949A JP3183383A JP18338391A JPH056949A JP H056949 A JPH056949 A JP H056949A JP 3183383 A JP3183383 A JP 3183383A JP 18338391 A JP18338391 A JP 18338391A JP H056949 A JPH056949 A JP H056949A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- plating
- alloy
- thickness
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、パワ−素子用ヒ−トシ
ンクに関し、接合部信頼性と放熱性を改善したＣｕめっ
きヒ−トシンクに係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat sink for power devices, and more particularly to a Cu-plated heat sink having improved joint reliability and heat dissipation.
【０００２】[0002]
【従来の技術】従来、ヒ−トシンク材料としては、放熱
性の面からＣｕおよびＣｕ合金が、はんだ接合部信頼性
の面からＭｏやＷが用いられており、いずれもＮｉめっ
きを施してパワ−素子とＡｌ2 Ｏ3 セラミックス基板の
間に接合される。2. Description of the Related Art Conventionally, as heat sink materials, Cu and Cu alloys have been used from the viewpoint of heat dissipation, and Mo and W have been used from the viewpoint of reliability of solder joints. Bonded between the element and the Al 2 O 3 ceramic substrate.
【０００３】Ｃｕは熱伝導性が高く優れた放熱性を有す
るが、熱膨張係数がＳｉやＡｌ2 Ｏ3 よりも３〜４倍大
きく、ハイパワ−素子が搭載される場合、熱膨張の違い
による歪が接合材のはんだの劣化を促進してしまう。一
方、ＭｏやＷは熱膨張係数が較的低く、はんだ劣化を遅
延させるには優れた材料であるが、熱伝導率が低いた
め、Ｃｕを用いた場合よりも放熱性の点で劣る。従っ
て、両者を複合化することにより、パワ−素子用に適し
たヒ−トシンクが期待できる。Cu has a high thermal conductivity and an excellent heat dissipation property, but its coefficient of thermal expansion is 3 to 4 times larger than that of Si or Al 2 O 3 , and when a high power element is mounted, it depends on the difference in thermal expansion. The distortion accelerates the deterioration of the solder of the bonding material. On the other hand, Mo and W have relatively low coefficients of thermal expansion and are excellent materials for delaying solder deterioration, but since they have low thermal conductivity, they are inferior in heat dissipation properties to the case of using Cu. Therefore, by combining both, a heat sink suitable for a power element can be expected.
【０００４】ＣｕとＭｏやＷを複合させる提案として
は、ＭｏやＷを樹脂とともに成形し、樹脂を除去してポ
−ラスとしたのちＣｕを含浸する方法や、クラッドによ
り接合（ＣｕとＦｅ−４２Ｎｉ合金が一般的）する方法
がある。As a proposal to combine Cu and Mo or W, a method of molding Mo or W together with a resin, removing the resin to form a porous layer, and then impregnating Cu, or joining with a clad (Cu and Fe- 42Ni alloy is common).
【０００５】[0005]
【発明が解決しようとする課題】前記従来技術におい
て、低熱膨張金属へのＣｕの含浸は工程が複雑でコスト
高をまねき、クラッド法では圧接条件が厳しく、信頼性
の高い接合は望めない。特にＭｏおよびＷは焼結インゴ
ットからの圧延のため、長尺材を得るのが難しく、さら
に強固な酸化物の存在のため、異種金属とのクラッドは
困難を極める。In the above-mentioned prior art, impregnation of Cu into a low thermal expansion metal involves a complicated process and leads to a high cost. In the cladding method, the pressure welding conditions are strict and reliable joining cannot be expected. In particular, since Mo and W are rolled from a sintered ingot, it is difficult to obtain a long material, and the presence of a strong oxide makes clading with a dissimilar metal extremely difficult.
【０００６】[0006]
【課題を解決するための手段】本発明は上記問題点を解
決するためになされたもので、金属もしくは合金にＣｕ
めっきしてなるヒ−トシンクを提案するものである。例
えば４２Ｎｉ−Ｆｅ合金へのＣｕめっきでは、切断成形
された４２Ｎｉ−Ｆｅ合金に、電気もしくは無電解でＣ
ｕをめっきし、上下・端面にＣｕがめっきされた４２Ｎ
ｉ−Ｆｅ合金の小片を得る。The present invention has been made in order to solve the above-mentioned problems, and Cu is added to a metal or an alloy.
It proposes a heat sink formed by plating. For example, in Cu plating on a 42Ni-Fe alloy, the cut and formed 42Ni-Fe alloy is electrically or electrolessly C-coated.
42N with u plating and Cu plating on the top and bottom / end surfaces
Obtain a small piece of i-Fe alloy.
【０００７】放熱性の程度により、Ｃｕめっきとヒ−ト
シンク材の厚さを変えて各種のヒ−トシンクを得ること
がができる。また、よりパワ−素子との接合部の信頼性
を重視する場合には、Ｃｕめっきの上にさらにＮｉめっ
きを施す。すなわち、本発明の要旨とするところは、Ｍ
ｏ、Ｗの金属もしくはその合金、Ｆｅ−Ｎｉ合金より選
ばれた材料に上下・端面すべてにＣｕめっきしてなるヒ
−トシンクであり、放熱性を高めるためにＣｕめっき厚
さは５０μｍ以上が好ましい。Various heat sinks can be obtained by changing the thickness of the Cu plating and the heat sink material depending on the degree of heat dissipation. Further, when more importance is placed on the reliability of the joint with the power element, Ni plating is further applied on top of Cu plating. That is, the gist of the present invention is that M
It is a heat sink formed by Cu-plating all the upper and lower surfaces of a material selected from o and W metals or alloys thereof, and Fe-Ni alloy, and the Cu plating thickness is preferably 50 μm or more in order to enhance heat dissipation. .
【０００８】[0008]
【作用およに効果】本発明により、高放熱性のヒ−トシ
ンクが安価に得られる。さらに、ヒ−トシンク材として
の低膨張材料の選定と、Ｃｕめっきの厚さを適当に選定
すれば、両者の特徴を生かしたヒ−トシンクが得られ
る。According to the present invention, a heat sink with high heat dissipation can be obtained at low cost. Furthermore, if a low expansion material as a heat sink material is selected and the thickness of Cu plating is appropriately selected, a heat sink that makes use of the characteristics of both can be obtained.
【０００９】[0009]
【実施例】以下に本発明をその一実施例に基づいて説明
する。 （実施例１） 図１において、１は熱膨張係数が低い４
２Ｎｉ−Ｆｅ製板８に熱伝導性が高いＣｕめっき９を施
した作製したヒ−トシンクで、２は前記ヒ−トシンク１
上に搭載されたパワ−素子で、３は前記ヒ−トシンク１
のパワ−素子２とは反対側に配置されたセラミックス基
板で、４は前記セラミックス基板３のヒ−トシンク１と
は反対側に配置されたファンである。５はセラミックス
基板３とファン４との間に介在させた放熱グリ−スで、
６はヒ−トシンク１をパワ−素子２及びセラミックス基
板３に接合させるはんだである。The present invention will be described below based on an embodiment thereof. (Example 1) In FIG. 1, 1 is a low coefficient of thermal expansion 4
2 A heat sink produced by applying a Cu plating 9 having a high thermal conductivity to a Ni-Fe plate 8 and 2 is the heat sink 1
The power device mounted on the upper part 3 is the heat sink 1
2 is a ceramic substrate arranged on the side opposite to the power element 2 and 4 is a fan arranged on the side opposite to the heat sink 1 of the ceramic substrate 3. Reference numeral 5 is a heat radiating grease interposed between the ceramic substrate 3 and the fan 4,
Reference numeral 6 is a solder for joining the heat sink 1 to the power element 2 and the ceramic substrate 3.
【００１０】より具体的に説明すると、ダイヤモンド砥
石により７mm×７mmの形状に切断した厚さ０．３mmの４
２Ｎｉ−Ｆｅ板８の端面を含む全面に、厚さ１００μm
のＣｕめっき９を施した。ここで、Ｃｕめっきは一般的
なピロリン酸浴による電気めっき法で行った。More specifically, a diamond grindstone cut into a shape of 7 mm × 7 mm and having a thickness of 0.3 mm
The thickness of 100 μm on the entire surface including the end surface of the 2Ni-Fe plate 8
Cu plating 9 was applied. Here, Cu plating was performed by an electroplating method using a general pyrophosphoric acid bath.
【００１１】（実施例２） 図２は熱膨張係数が低い４
２Ｎｉ−Ｆｅ製板８に熱伝導性が高いＣｕめっき９を施
したのち、さらにはんだ接合部の信頼性の高いＮｉめっ
き１０を施して作製したヒ−トシンクであり、他の構成
は実施例１と同じである。Example 2 FIG. 2 shows that the coefficient of thermal expansion is low.
2 Ni-Fe plate 8 is a heat sink manufactured by applying Cu plating 9 having high thermal conductivity, and then Ni plating 10 having high reliability of the solder joint portion, and other configurations are those of Example 1 Is the same as.
【００１２】より具体的に説明すると、ダイヤモンド砥
石により７mm×７mmの形状に切断した厚さ０．３mmの４
２Ｎｉ−Ｆｅ板８の端面を含む全面に、厚さ１００μm
のＣｕめっき９を施したものに、Ｎｉめっき１０を施し
た。ここで、Ｃｕめっきは一般的なピロリン酸Ｃｕめっ
き浴による電気めっき法で行い、Ｎｉめっきは一般的な
ワット浴による電気めっき法で行い５μm のめっき厚と
した。More specifically, a diamond grindstone cut into a shape of 7 mm × 7 mm having a thickness of 0.3 mm
The thickness of 100 μm on the entire surface including the end surface of the 2Ni-Fe plate 8
The Ni plating 10 was applied to the Cu plating 9 of the above. Here, Cu plating was performed by a general electroplating method using a Cu pyrophosphate plating bath, and Ni plating was performed by a general electroplating method using a Watts bath to a plating thickness of 5 μm.
【００１３】（実施例３） 実施例１と同様にヒ−トシ
ンク１を７mm×７mmの形状に作製し、また、厚さ０．５
mmの４２Ｎｉ−Ｆｅ板８から切り出し７mm×７mmの小片
を作成し、比較材とした。(Embodiment 3) The heat sink 1 was formed in a shape of 7 mm x 7 mm in the same manner as in Embodiment 1, and the thickness was 0.5.
A 7 mm × 7 mm piece was cut out from a 42 mm Ni-Fe plate 8 having a size of 8 mm to prepare a comparative material.
【００１４】これらのヒ−トシンク１を図３に示す如
く、理想放熱を想定した積層構造に組み込み、パワ−素
子２とセラミックス基板３とで挟んではんだ６で接合
し、該セラミックス基板３を放熱グリ−ス５を介してＡ
ｌ製のファン４と接触させた。さらに、パワ−素子２を
発熱させ、そのときの温度上昇を温度測定点７で熱電対
により測定した。As shown in FIG. 3, these heat sinks 1 are assembled in a laminated structure assuming ideal heat radiation, sandwiched between the power element 2 and the ceramic substrate 3 and joined with solder 6, and the ceramic substrate 3 is radiated. A through grease 5
It was brought into contact with an l-made fan 4. Further, the power element 2 was made to generate heat, and the temperature rise at that time was measured by a thermocouple at the temperature measuring point 7.
【００１５】図４が発熱量５Ｗ、１０Ｗ，１５Ｗのとき
の温度上昇を示した図であり、比較材の４２Ｎｉ−Ｆｅ
（１ｂ）が熱抵抗３．９Ｋ／Ｗの熱抵抗を示すのに対し
て、本発明のＣｕめっき４２Ｎｉ−Ｆｅ（１ａ）では
１．０Ｋ／Ｗへ放熱性が改善されている。FIG. 4 is a graph showing the temperature rise when the heating value is 5 W, 10 W, and 15 W.
While (1b) shows a thermal resistance of 3.9 K / W, the Cu plating 42Ni-Fe (1a) of the present invention has improved heat dissipation to 1.0 K / W.
【００１６】[0016]
【図１】図１は、４２Ｎｉ−Ｆｅ板にＣｕめっきを施し
た本発明のヒ−トシンクを用いた半導体装置の側断面図
である。FIG. 1 is a side sectional view of a semiconductor device using a heat sink of the present invention in which a 42Ni—Fe plate is plated with Cu.
【図２】図２は、４２Ｎｉ−Ｆｅ板にＣｕめっきを施し
たものに、さらにＮｉめっきを施した本発明のヒ−トシ
ンクを用いた半導体装置の側断面図である。FIG. 2 is a side sectional view of a semiconductor device using a heat sink of the present invention in which a 42Ni—Fe plate is plated with Cu and further plated with Ni.
【図３】図３は、実施例３におけるヒ−トシンクの熱抵
抗測定積層構造図である。FIG. 3 is a thermal resistance measurement laminated structure diagram of a heat sink according to a third embodiment.
【図４】図４は、本発明と従来のヒ−トシンクの熱抵抗
（発熱量に伴う温度上昇）を示した線図である。FIG. 4 is a diagram showing the thermal resistance (temperature rise with heat generation amount) of the heat sink of the present invention and the conventional heat sink.
１：ヒ−トシンク ２：パワ−素子 ３：セラミックス基板 ４：フィン ５：放熱グリ−ス ５：はんだ ７：温度測定点 ８：４２Ｎｉ−Ｆｅ板 ９：Ｃｕめっき層 10：Ｎｉめっき層 1: Heat sink 2: Power element 3: Ceramics substrate 4: Fins 5: Heat dissipation grease 5: Solder 7: Temperature measurement point 8: 42 Ni-Fe plate 9: Cu plating layer 10: Ni plating layer
Claims (1)
される半導体装置において、前記ヒ−トシンクの材料は
Ｍｏ，Ｗの金属もしくはその合金、Ｆｅ−Ｎｉ合金から
選ばれた材料で構成し、該ヒ−トシンク材の表面に少な
くとも５０μｍ以上の厚さのＣｕめっきが施されてお
り、上下・端面すべてにＣｕめっきされていることを特
徴とするヒ−トシンク。Claim: What is claimed is: 1. In a semiconductor device in which a power element is mounted via a heat sink, the material of the heat sink is selected from Mo and W metals or their alloys, and Fe-Ni alloys. A heat sink, characterized in that the surface of the heat sink material is Cu-plated with a thickness of at least 50 μm or more, and the upper, lower, and end surfaces are all Cu-plated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3183383A JPH056949A (en) | 1991-06-27 | 1991-06-27 | Heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3183383A JPH056949A (en) | 1991-06-27 | 1991-06-27 | Heat sink |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH056949A true JPH056949A (en) | 1993-01-14 |
Family
ID=16134813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3183383A Pending JPH056949A (en) | 1991-06-27 | 1991-06-27 | Heat sink |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH056949A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020051468A (en) * | 2000-12-22 | 2002-06-29 | 밍 루 | Structure for a radiant heat of power device module |
| WO2008123172A1 (en) * | 2007-03-27 | 2008-10-16 | Ngk Insulators, Ltd. | Heat spreader module, heat sink and method for manufacturing the heat spreader module and the heat sink |
| JP2013225556A (en) * | 2012-04-20 | 2013-10-31 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method therefor |
| JP2016100520A (en) * | 2014-11-25 | 2016-05-30 | トヨタ自動車株式会社 | Semiconductor device |
-
1991
- 1991-06-27 JP JP3183383A patent/JPH056949A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020051468A (en) * | 2000-12-22 | 2002-06-29 | 밍 루 | Structure for a radiant heat of power device module |
| WO2008123172A1 (en) * | 2007-03-27 | 2008-10-16 | Ngk Insulators, Ltd. | Heat spreader module, heat sink and method for manufacturing the heat spreader module and the heat sink |
| JP2013225556A (en) * | 2012-04-20 | 2013-10-31 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method therefor |
| JP2016100520A (en) * | 2014-11-25 | 2016-05-30 | トヨタ自動車株式会社 | Semiconductor device |
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