JPH05340957A - Semiconductor sensor and manufacture thereof - Google Patents

Abstract

PURPOSE:To mass-produce semiconductor sensors without damaging beam parts or diaphragm parts which affect the sensitivity of sensor. CONSTITUTION:The semiconductor sensor comprises a central working section 30, a peripheral beam section 31, a diaphragm section 32, a peripheral fixed frame section 33, and a distortion sensitive sensor disposed at the beam section 31, wherein an annular groove 32a is made in the bottom face of a semiconductor board E thus defining the working section 30 and the thick fixed section 33. An auxiliary board F is then bonded and partially cut off through machining thus forming a weight body 34 to be jointed with the working section 30 and a base 35 to be jointed with the fixed section 33. The thick part is then etched from the top face side of the semiconductor substrate E thus forming a thin diaphragm section 32 and beam section 31. The semiconductor board E is subjected to bonding pressure, cutting load, or impact when it is still thick prior to formation of thin diaphragm section 32 or beam section 31, which thereby protected against damage.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor sensor for acceleration detection used in automobiles, aircrafts, home appliances and the like.

[0002]

2. Description of the Related Art Conventionally, as a sensor for detecting acceleration,
A wide variety of acceleration sensors using various materials such as piezoelectric ceramics, organic thin films, and silicon single crystal plates have been developed.
It has been commercialized. These acceleration sensors have no hysteresis, creep, fatigue, etc., have a simple structure, have extremely high voltage sensitivity, and can easily amplify the output. Widely used in various fields.

Above all, a semiconductor acceleration sensor using a silicon single crystal has an ideal elastic body because the lattice defects of silicon itself are extremely small, and has a feature that the semiconductor process technology can be diverted as it is. Therefore, in recent years, it is an acceleration sensor that has received a great deal of attention.

FIG. 8 and FIG. 9 show an example of the structure of a conventionally known semiconductor acceleration sensor device disclosed in Japanese Patent Application Laid-Open No. 3-2535. A semiconductor sensor P serves as a central unit of the semiconductor acceleration sensor device A, and a sectional structure of the semiconductor sensor P is shown in FIG. 8 and a top view thereof is shown in FIG. This semiconductor sensor P
Is divided into three regions, that is, the action part 1 in the central part, the flexible part 2 around it, and the fixed part 3 around it. As shown in FIG. 8, an annular groove 2a is formed in the lower portion of the flexible portion 2, and the flexible portion 2 has a thin structure and is flexible. A weight body 4 is fixed below the acting portion 1, and a pedestal 5 surrounding the circumference of the weight body 4 is provided below the fixing portion 3, and the pedestal 5 is fixed to the lower control body 6. The lower control body 6 is fixed to the inner bottom portion of the package 7. An upper control body 8 is attached to the upper surface of the semiconductor sensor P. As shown in FIG. 9, strain sensitive gauges Rx1 to Rx4 and Ry1 to Ry1 to Ry1 to piezoresistive elements are provided on the upper surface of the flexible portion 2.
Ry4 and Rz1 to Rz4 are formed in a predetermined direction, and a bonding pad 10 connected to each strain sensitive gauge is connected to a lead terminal 12 extended to the outside of the package 7 via a bonding wire 11.

Next, a method of manufacturing the conventional semiconductor acceleration sensor P will be described. In order to manufacture the acceleration sensor P, as shown in FIG. 10, a predetermined number of strain sensitive gauges R are formed on the upper surface of the semiconductor wafer 15 by means such as impurity implantation.
Then, the annular groove 16 is formed on the lower surface of the semiconductor wafer 15. Next, as shown in FIG. 11, an auxiliary substrate 18 such as a glass plate having an annular cut groove 17 formed on the upper surface so as to match the position of the groove 16 is prepared, and this auxiliary substrate 18 is bonded by an anodic bonding method or the like. It is legally bonded to the lower surface of the semiconductor wafer 15. Then, as shown in FIG. 12, the auxiliary substrate 18 is cut from the lower surface of the auxiliary substrate 18 by dicing to form an annular cutting groove 19 so as to reach the cutting groove 17. Next, if the semiconductor wafer 15 and the auxiliary substrate 18 are cut and processed along the cutting line L shown in FIG. 12, a plurality of semiconductor sensors P can be manufactured at the same time.

By processing as described above, the weight portion 20 is formed inside the annular cutting groove 19, and the annular cutting groove 19 is formed.
The pedestal portion 21 can be formed around the. As a result, the weight body 20 of the sensor shown in FIG.
Can be formed, and the pedestal portion 21 can form the pedestal 5 of the sensor shown in FIG. According to the manufacturing method as described above, a plurality of semiconductor sensors P can be manufactured simultaneously from one semiconductor wafer 15 and one auxiliary substrate 18.

[0007]

According to the semiconductor sensor P having the above structure, when a force acts on the weight body 4 and the flexible portion 2 bends, mechanical deformation occurs and the electrical resistance of the strain sensitive gauges R ... Change occurs, and this change in electric resistance can be taken out as an electric signal to the outside. Therefore, the sensitivity of the semiconductor sensor P having the above structure strongly depends on the flexibility of the flexible portion 2. That is, the thinner the thickness of the flexible portion 2, the greater the flexibility and the higher the sensitivity. Therefore, the thickness of the flexible portion 2 is generally 3
It is formed to be 0 μm or less.

Therefore, in the semiconductor sensor P having the above-mentioned structure, various studies have been made on how to make the flexible portion 2 thinner to increase the sensitivity. Against this background, the present inventors previously applied for a patent for a semiconductor acceleration sensor having a new structure as of June 27, 1991 (Japanese Patent Application No. 3-1
83043). FIG. 13 shows an embodiment of the semiconductor sensor according to the above-mentioned patent application, which is a mass part 25 formed in a central part of a semiconductor wafer (semiconductor substrate).
And beam portions 26, 26 provided around it, a frame-shaped fixing portion 27 provided around these, and the beam portion 26,
Diaphragm portion 28 formed so as to sandwich both sides of 26
And a strain-sensitive sensor 29 provided on the upper surface of the beam portion 26.

In the semiconductor sensor having the above structure, by providing the diaphragm portion 28, the influence of the acceleration acting on the beam portion 26 from the lateral direction can be eliminated, and the directivity of the vertical acceleration detection can be improved. It has excellent features such as.

However, when an attempt is made to manufacture the semiconductor sensor having the structure shown in FIG. 13 by applying the above-mentioned manufacturing method,
When the auxiliary substrate is bonded to the semiconductor wafer by the anodic bonding method, it is necessary to apply a voltage between them to raise the temperature of both and process them while applying pressure. At this time, the thin beam portion 26 is used.
When the auxiliary substrate is diced, the thin beam portion 26 and the diaphragm portion 28 may be impacted, and these portions may be damaged. Then, there is a problem that this is a factor of lowering the yield when mass-producing this type of semiconductor sensor.

The present invention has been made in view of the above circumstances, and a manufacturing method capable of mass-producing semiconductor sensors without damaging a beam portion or a diaphragm portion that influences the sensitivity of the sensor, and a beam portion. Another object of the present invention is to provide a semiconductor sensor having excellent directivity that can be manufactured without damaging the diaphragm part.

[0012]

In order to solve the above-mentioned problems, the present invention has a central operating portion made of a semiconductor substrate, a beam portion around the central operating portion, and a frame-shaped fixing portion around the operating portion. In the method of manufacturing a semiconductor sensor having a strain sensitive sensor on the beam portion, an annular groove is formed on the lower surface of the semiconductor substrate, and an action portion is provided inside the groove and a thick portion is provided above the groove. A fixing portion is formed around the groove, an auxiliary substrate is bonded to the lower surface of the semiconductor substrate, and then a part of the auxiliary substrate is machined to connect to the acting portion and the weight body. A pedestal connected to the fixed portion is formed, and then the thick portion is etched from the upper surface side of the semiconductor substrate by etching to reduce the thickness, and a thin diaphragm portion and a beam portion are formed above the groove. To do.

In order to solve the above-mentioned problems, the invention according to claim 2 is provided with a central operating portion made of a semiconductor substrate, a beam portion and a diaphragm portion around the central operating portion, and a frame-shaped fixing portion around them. In the method for manufacturing a semiconductor sensor in which a strain sensitive sensor is provided on the beam portion, an annular groove is formed on a lower surface of a semiconductor substrate, an operating portion is provided inside the groove, and a thick portion is provided above the groove. A fixing portion is formed around the periphery of the semiconductor substrate, an auxiliary substrate is bonded to the lower surface of the semiconductor substrate, and then a part of the auxiliary substrate is machined to connect to the acting portion and the fixing portion. And a pedestal to be connected to, then, by etching a part of the thick portion from the upper surface side of the semiconductor substrate by etching to completely remove a part of the thick portion, to penetrate
The beam portion is formed in the portion excluding this penetrating portion.

According to a third aspect of the present invention, in order to solve the above-mentioned problems, the present invention is provided with a central action portion made of a semiconductor substrate, a beam portion around the action portion, and a frame-shaped fixing portion around the action portion. In a semiconductor sensor provided with a strain sensitive sensor, a diaphragm portion thinner than the beam portion is formed in a portion surrounded by the action portion, the beam portion and the fixed portion, which is continuous with the action portion, the beam portion and the fixed portion. It will be done.

[0015]

[Function] A groove is formed on the lower surface of the semiconductor substrate to form a thick portion, the auxiliary substrate is bonded in this state, the auxiliary substrate is cut, and then the upper surface of the semiconductor substrate is etched to form a necessary portion. Since the beam portion and the diaphragm portion are formed by further thinning, the pressure at the time of bonding and the load or shock at the time of cutting act on the semiconductor substrate in the state of the thick portion before forming the thin diaphragm portion and the beam portion. .. Therefore, the thin diaphragm and the beam are not damaged. Further, since the diaphragm portion and the beam portion can be formed while avoiding the pressure at the time of joining the semiconductor substrate and the auxiliary substrate and the load or impact at the time of cutting, these parts are thinly processed after applying the pressure, load or impact. This can be easily done and the sensitivity of the sensor is improved.

On the other hand, in the portion surrounded by the acting portion, the beam portion and the fixing portion of the semiconductor sensor, a diaphragm portion which is continuous with the acting portion, the beam portion and the fixing portion and is thinner than the beam portion is formed. Since the diaphragm part eliminates the influence of the force acting on the beam part from the lateral direction, the force acting on the beam part in the vertical direction can be reliably detected, and the detection directivity and sensitivity as a sensor are improved. ..

[0017]

Embodiments of the present invention will be described below with reference to the drawings. 1A and 1B show an embodiment of a semiconductor sensor according to the present invention. The semiconductor sensor H of this embodiment is basically provided in the conventional semiconductor sensor device A described above with reference to FIGS. 8 and 9.

The semiconductor sensor H of this example comprises a semiconductor substrate E made of a semiconductor wafer and an auxiliary substrate F made of glass or ceramics bonded to the lower surface of the semiconductor substrate E. 30 and the beam portion 31 and the diaphragm portion 32 around it, and the fixing portion 33 around them are divided into respective regions.

First, in the semiconductor sensor H, FIG.
As shown in the sectional structure of (b), an annular groove 32a is formed in the central portion of the lower surface of the semiconductor substrate E, leaving a downwardly projecting connecting portion 30a, and the beam portion 31 above this groove 32a.
Has a thin structure and has flexibility. A weight body 34 is fixed below the acting portion 30 via a connecting portion 30a,
Below the fixed portion 33, a pedestal 35 surrounding the weight body 34 is provided.
Is stuck. The weight body 34 has a pedestal 3 formed by an annular groove portion 35a and a cutting groove 35b formed around the weight body 34.
Separated from 5. The groove portion 35a and the cutting groove 35b
Are continuous with each other and penetrate through the auxiliary substrate F, and the groove portion 35a is formed on the upper surface side of the auxiliary substrate F and the semiconductor substrate E
Of the auxiliary substrate F and the cutting groove 35b is formed on the lower surface side of the auxiliary substrate F and opens on the lower surface of the auxiliary substrate F.

On the upper surface of the beam portion 31 of the semiconductor substrate E, strain sensitive gauges Rx1 to Rx4 such as piezoresistive elements,
Ry1 to Ry4 and Rz1 to Rz4 are formed in predetermined directions. In addition, the beam portion 31 is formed in a plane cross shape so as to be flush with the upper surface of the fixed portion 33, and at the portion around the beam portion 31 between the fixed portion 33 and the beam portion 31, Also, a thin diaphragm portion 32 that is continuous with the beam portion 31 and the fixed portion 33 is formed.

The semiconductor sensor H having the structure shown in FIG.
When acceleration acts in the vertical direction of the
The strain gauges Rx1 to Rx4, R
The acceleration acting on the semiconductor sensor H can be measured by detecting y1 to Ry4 and Rz1 to Rz4 and electrically detecting the amount of strain. Further, by providing the diaphragm portion 32, the beam portion 31 does not bend in the lateral direction even when the beam portion 31 is subjected to the acceleration in the lateral direction. Therefore, the influence of the acceleration acting in the lateral direction can be eliminated. Since only the acceleration acting in the vertical direction can be efficiently detected, the directivity of acceleration detection can be improved.

Next, a method of manufacturing the acceleration sensor H configured as described above will be described. To manufacture the acceleration sensor H, first, a semiconductor substrate (semiconductor wafer) used in a semiconductor process is used, and a plurality of unit regions are defined on the semiconductor substrate. This semiconductor substrate is cut out separately for each unit in the subsequent dicing process, and each becomes an independent semiconductor sensor. For example, a large number of unit areas such as squares are defined in an aligned state on the upper surface of a disk-shaped semiconductor substrate, but here, for the sake of simplification of description, one square unit area will be described as an example.

FIG. 2 shows the n-type S which constitutes this unit area.
FIG. 3 is a plan view of a semiconductor substrate 50 made of an i substrate or the like. When the semiconductor substrate 50 is sequentially processed in the order of steps thereafter, a cross section taken along the line AA ′ of FIG.
3A, FIG. 4A, and FIG. 5A, and the cross section taken along the line BB ′ of FIG. 2 is shown in FIG. 3B, FIG. 4B, and FIG. Show. First, strain sensing gauges Rx1 to Rx4, Ry1 to Ry1 to Rx1 to Rx1 to Rx1 to Rx1 to Rx1 are formed on the upper surface of the square semiconductor substrate 50 shown in FIG.
Ry4 and Rz1 to Rz4 are formed in a predetermined direction. On the lower surface of the semiconductor substrate 50, a method similar to the case of the conventional manufacturing method described above with reference to FIG. 10 is used, and as shown in the chain line in FIG. 2 or the cross-sectional structure in FIGS. 3 and 4. A rectangular annular groove 51 is formed and a thick portion 52 is formed on the upper surface of the semiconductor substrate 50. The groove 51 is formed by chemical etching using an etching solution or mechanical cutting.

Next, the auxiliary substrate 53 is formed on the lower surface of the semiconductor substrate 50 by using an anodic bonding method similar to the conventional method and the auxiliary substrate 53 is formed as shown in FIGS.
Join as shown in. An annular groove portion 53a that can be aligned with the annular groove 51 on the lower surface of the semiconductor substrate 50 is formed on the upper surface of the auxiliary substrate 53 by dicing or the like, and the annular groove portion 53a and the annular groove 5 are formed.
1 is positioned as shown in FIG. 3 (b) and then bonded. In addition, in this bonding, a voltage is applied to the semiconductor substrate 50 and the auxiliary substrate 53 to press them while heating them, thereby bonding them. Here, since the beam portion and the diaphragm portion which will be formed in a later step are not formed in the thick portion 52, it is possible to sufficiently withstand the pressurization. Next, an annular cutting groove 53b as shown in FIG. 4 is formed from the lower surface of the auxiliary substrate 53 by dicing so as to communicate with the groove portion 53a. In addition, during the groove processing, the thick portion 5
Since the beam portion and the diaphragm portion which will be formed in a later step are not formed in the second portion 2, the thick portion 52 can sufficiently withstand the impact and pressure of the groove processing.

Next, the upper surface of the semiconductor substrate 50 is covered with a resist 55 by the lithography method. In this case, the resist 55 is not covered on the upper surface of the semiconductor substrate 50 where the strain sensitive gauge is formed and wiring is performed in a later step.

Next, the reactive gas ion etching method (RI
Method) or a so-called dry etching method such as CF ₄ -O ₂ plasma etching method to dry-etch a portion of the thick portion 52 which is not covered with the resist from above to process a part of the thick portion 52 further thinly. And diaphragm part 3
Form 2. The dry etching is thinly processed only on the upper surface of the semiconductor substrate 50 where the strain sensitive gauge and wiring are not performed in the subsequent steps. Therefore, on the upper surface of the semiconductor substrate 50 shown in FIG. 2, the central portion of the upper surface, the range where the strain sensitive gauges Rx1 to Rx4, Ry1 to Ry4, Rz1 to Rz4 are formed, and the peripheral portion of the upper surface are dry-etched. The beam portion 31 and the thin diaphragm portion 32 thinner than the beam portion 31 are formed. When the diaphragm portion 32 is formed, the diaphragm portion 32 having a uniform thickness thinner than the beam portion 31 can be formed by dry etching.

Subsequently, when the resist 55 is removed as shown in FIG. 6, the semiconductor substrate E formed of the semiconductor substrate 50 and the auxiliary substrate F formed of the auxiliary substrate 53 are bonded to each other and act on the central portion of the upper surface. It has a part 30, a flexible part 31 around it, a fixing part 33 around it, and a weight part 3 below the acting part 31 via a connecting part 31a.
4 and the pedestal 35 below the fixed portion 33,
1 and the diaphragm 32, the semiconductor sensor H of FIG.
A semiconductor sensor H equivalent to is obtained.

According to the manufacturing method described above, the auxiliary substrate 5
3 is anodically bonded to the semiconductor substrate 50 and the auxiliary substrate 53.
Although any pressure or impact is applied to the thick portion 52 when cutting, the auxiliary substrate 53 is joined and cut in the state of the thick portion 52 before the diaphragm portion 32 and the beam portion 31 are formed. In either case, the diaphragm portion 32 and the beam portion 31 are not damaged.

By the way, if the diaphragm portion 32 is eliminated by removing the entire thick portion 52 not covered with the resist during the etching, the semiconductor having the through hole 32 'as shown in FIG. 7 is formed. A sensor H'is obtained. Also in the sensor H'having this structure, acceleration can be detected similarly to the semiconductor sensor H having the structure described above.

In each of the above-mentioned embodiments, the arrangement of the strain sensitive gauge R and the pattern of the wiring portion may be freely changed, and the shape and size of the semiconductor substrate E to be used and the size of each part of the sensor. The pod shape is not particularly limited. Further, the depth of dry etching performed from the surface of the semiconductor substrate E is arbitrary, and the method is not particularly limited as long as it is dry etching.

[0031]

As described above, according to the method of the present invention, a groove is formed in the lower surface of a semiconductor substrate to form a thick portion, the auxiliary substrate is bonded in this state, and then the auxiliary substrate is cut, Since the beam and the diaphragm are formed by etching the upper surface of the semiconductor substrate by etching and thinning the necessary parts further, the pressure at the time of joining in the thick part before the thin diaphragm and the beam is formed. It is possible to apply a load or impact at the time of cutting or to the semiconductor substrate. Therefore, the thin diaphragm and the beam portion formed thereafter are not damaged. Also, since the diaphragm part and the beam part can be formed while avoiding the pressure at the time of joining and the load or impact at the time of cutting,
These portions can be easily made thin, and the sensitivity of the sensor is improved. Further, when the diaphragm portion is formed by etching, the thickness of the diaphragm portion can be freely adjusted, and the diaphragm portion having a predetermined thickness can be easily obtained by etching. Also, in the method of forming the beam portion by penetrating it when thinning a part of the semiconductor substrate by etching, similarly to the above case, the pressure at the time of joining in the state of the thick portion and the load or impact at the time of cutting Can be loaded on the semiconductor substrate. Therefore, the thin diaphragm and the beam portion formed thereafter are not damaged.

On the other hand, in the portion surrounded by the operating portion, the beam portion and the fixed portion of the semiconductor sensor, a diaphragm portion which is continuous with the operating portion, the beam portion and the fixed portion and is thinner than the beam portion is formed. Since the diaphragm part eliminates the influence of the force acting on the beam part from the lateral direction, the force acting in the up-down direction on the beam part can be reliably detected, and the detection directivity and sensitivity as a sensor are improved. .. Further, if the above structure is adopted, a groove is formed in the lower surface of the semiconductor substrate to form a thick portion, the auxiliary substrate is bonded in this state, the auxiliary substrate is cut, and then the upper surface of the semiconductor substrate is cut. Since it can be manufactured by the method of forming a beam part and a diaphragm part by etching the part by etching to make the necessary part thinner, before joining the thin diaphragm part and the beam part, when joining in the thick part The semiconductor substrate can be manufactured without damaging the thin diaphragm and the beam portion formed thereafter, because the pressure or the load or impact at the time of cutting can be applied to the semiconductor substrate.

[Brief description of drawings]

FIG. 1 (a) is a perspective view showing a main part of an embodiment of a semiconductor sensor according to the present invention, and FIG. 1 (b) is a C of FIG. 1 (a).
It is a sectional view taken along the line C.

FIG. 2 is a top view showing a state before processing of a semiconductor substrate used for explaining the method of the present invention.

3 shows a state in which an auxiliary substrate is bonded to the lower surface of the semiconductor substrate shown in FIG. 2. FIG. 3 (a) is a cross-sectional view taken along the line AA ′ of FIG. ) Is a sectional view taken along the line BB ′ of FIG. 2.

4 shows a state in which a photoresist is formed on the semiconductor substrate shown in FIG. 2, FIG. 4 (a) is a cross-sectional view taken along the line AA ′ of FIG. 2, and FIG. 4 (b). Is BB 'in Figure 2
It is sectional drawing which follows the line.

5 shows a state in which the semiconductor substrate shown in FIG. 2 is etched. FIG. 5 (a) is a sectional view taken along the line AA 'in FIG. 2, and FIG. 5 (b) is shown in FIG. It is sectional drawing which follows the BB 'line.

6 shows a state in which the photoresist is removed from the state shown in FIG. 5, and FIG. 6 (a) is AA ′ of FIG.
6 is a sectional view taken along the line BB ′, and FIG. 6B is a sectional view taken along the line BB ′ in FIG. 2.

FIG. 7 is a perspective view showing another example of a semiconductor sensor manufactured by the method of the present invention.

FIG. 8 is a cross-sectional view showing one structural example of a conventional semiconductor sensor.

FIG. 9 is a top view of the semiconductor sensor shown in FIG.

10 is a cross-sectional view showing a state in which a groove is formed in a semiconductor substrate, for explaining a method for manufacturing the semiconductor sensor having the conventional structure shown in FIG.

11 is a cross-sectional view showing a state in which an auxiliary substrate is bonded to the semiconductor substrate shown in FIG.

12 is a cross-sectional view showing a state where the auxiliary substrate shown in FIG. 10 has a kerf.

FIG. 13 is a perspective view showing an example of a semiconductor sensor for which the present inventors have previously applied for a patent.

[Explanation of symbols]

 H semiconductor sensor, E semiconductor substrate, F auxiliary substrate, 30 working part, 31 beam part, 32 diaphragm part, 32a groove, 33 fixing part, 34 weight body, 35 pedestal, 35a groove part, 35b cutting groove, Rx1 to Rx4, Ry1 ~ Ry4, Rz1 ~ Rz4 strain gauge,

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hitoshi Nishimura 1-5-1, Kiba, Koto-ku, Tokyo Fujikura Electric Wire Co., Ltd. (72) Inventor Katsuhiko Takahashi 1-1-5, Kiba, Koto-ku, Tokyo Fujikura Electric Wire Co., Ltd.

Claims (3)

[Claims] 1. A semiconductor comprising a semiconductor substrate, comprising a central action portion, a beam portion and a diaphragm portion around the action portion, and a frame-shaped fixing portion around them, and a strain sensitive sensor provided on the beam portion. In the method of manufacturing a sensor, an annular groove is formed on a lower surface of a semiconductor substrate, an action portion is formed inside the groove, a thick portion is formed above the groove, and a fixing portion is formed around the groove, and then the semiconductor substrate is formed. On the lower surface of the auxiliary substrate, and subsequently, a part of the auxiliary substrate is cut by machining to form a weight body connected to the working portion and a pedestal connected to the fixed portion, and then, A method of manufacturing a semiconductor sensor, wherein the thick portion is etched from the upper surface side of the semiconductor substrate by etching to reduce the thickness, and a thin diaphragm portion and a beam portion are formed above the groove. 2. A semiconductor substrate, comprising a central action part, a beam part around it, and a frame-shaped fixing part around it.
In the method for manufacturing a semiconductor sensor in which a strain sensitive sensor is provided on the beam portion, an annular groove is formed on a lower surface of a semiconductor substrate, an operating portion is provided inside the groove, and a thick portion is provided above the groove. A fixing portion is formed on the periphery, then an auxiliary substrate is bonded to the lower surface of the semiconductor substrate, and then a part of the auxiliary substrate is cut by machining to connect the weight body and the fixing portion to the acting portion. A pedestal to be connected is formed, and then a part of the thick portion is etched from the upper surface side of the semiconductor substrate by an etching method to completely remove a part of the thick portion to penetrate the through portion. A method of manufacturing a semiconductor sensor, characterized in that the removed portion is a beam portion. 3. A semiconductor substrate, comprising a central action part, a beam part around it, and a frame-shaped fixing part around it.
In a semiconductor sensor in which a strain sensitive sensor is provided on the beam portion, a diaphragm portion that is continuous with the action portion, the beam portion, and the fixed portion and is thinner than the beam portion in a portion surrounded by the action portion, the beam portion, and the fixed portion. A semiconductor sensor comprising: