JPH0521347A - Sputtering device - Google Patents

Abstract

PURPOSE:To stabilize depositing speed and composition of a film and to efficiently and inexpensively form a film by providing a varying mechanism which can adjust a distance and an angle to a substrate of a target. CONSTITUTION:The first target 102 and the second target 103 are oppositely disposed on a substrate 110 in a film forming chamber 101. The targets 102, 103 are respectively connected to power sources 105, 106, constituting particles are scattered from the targets to form a film when they are supplied with powers from the power sources. The target 103 is placed on a varying mechanism 104, a distance and an angle to the substrate of the target are adjusted to set the depositing speed and composition of the film to be formed on the substrate to the same as those at the initial time of forming the film. Thus, the depositing speed and the composition of the film can be stabilized, and the film can be formed efficiently and inexpensively.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for depositing constituent particles on a substrate to form a film.

[0002]

2. Description of the Related Art In a sputtering apparatus, a film is formed by depositing constituent particles emitted from a target and scattered on a substrate. Since the target surface is gradually abraded by the film forming operation, the flight of the constituent particles is significantly changed, and the deposition rate and composition of the film formed on the substrate are different from those at the beginning of the film forming operation. In order to prevent such a change, conventionally, the electric power applied to the target is changed to adjust the flying amount of the constituent particles.

[0003]

In the conventional sputtering apparatus, in order to prevent the deposition rate and composition of the film formed on the substrate from changing, the amount of fly of the constituent particles is adjusted by changing the power applied to the target. To do. However, since the scattering direction itself does not change even if the flying amount of the constituent particles changes, there is a problem that it is not possible to sufficiently suppress changes in the deposition rate and composition of the film. Moreover, since the constituent particles are scattered in directions other than the substrate, there is a problem that the consumption of the target is heavy, the production efficiency is poor, and the manufacturing cost of the substrate is high.

The present invention has been made in view of the problems of the above-mentioned conventional techniques, and the deposition rate and composition of the film are stabilized, and the film can be formed with high efficiency and low cost. The purpose is to realize a sputtering device.

[0005]

A sputtering apparatus of the present invention is a sputtering apparatus in which a substrate and a target are arranged so as to face each other, and constituent particles emitted from the target are deposited on the substrate to form a film. In order to be able to adjust the distance and angle to the substrate,
A variable mechanism for mounting the target is provided.

In this case, a plurality of targets arranged opposite the substrate may be provided, and at least one target may be mounted on a variable mechanism provided individually.

[0007]

With the variable mechanism, the distance and angle of the target with respect to the substrate can be adjusted according to the flight of the constituent particles, which changes depending on the film forming operation. It can be the same as the initial stage of the membrane operation.

[0008]

Embodiments of the present invention will now be described with reference to the drawings.

FIG. 1 shows a first sputtering apparatus according to the present invention.
It is a figure which shows the structure of the Example of this.

In this embodiment, two targets in which the constituent particles fly differently are installed in one film forming chamber, and the constituent particles from each target form a film on the substrate.

In the film forming chamber 101, the first target 1
02 and the second target 103 are arranged to face the substrate 110. The first target 102 and the second target 103 are connected to the first power source 105 and the second power source 106, respectively, and constituent particles are scattered from each target when receiving power from each power source. Then, a film is formed. In the present embodiment, as the first and second targets, constituent particles that scatter during film formation often scatter in a direction perpendicular to the target surface are used as the first target, and scatter obliquely in many cases. One is used as the second target. Therefore, the second target 103 is mounted on the variable mechanism 104 whose distance and angle with respect to the substrate 110 can be arbitrarily adjusted.

The atmosphere inside the film forming chamber 101 is a vacuum valve 1.
07, an exhaust device 108 for exhausting the inside of the film forming chamber 101 via a vacuum valve 107, and a gas introducing valve 109 for supplying a predetermined gas to the film forming chamber 101.

Next, a specific example of the film forming operation by the sputtering apparatus shown in FIG. 1 will be described.

[Specific Example 1] A perpendicular magnetization film was formed using the sputtering apparatus shown in FIG. Iron cobalt was used as the first target 102, and terbium was used as the second target 103, and a glass substrate 110 was set. Subsequently, the film forming chamber 101 was evacuated by the evacuation device 108 until the pressure reached 1 × 10 ⁻⁷ Torr. Next, Ar gas, which is a sputtering gas, is supplied from the gas introduction valve 109 to the film forming chamber 101.
It was introduced until the internal pressure became 2 × 10 ⁻³ Torr. Then, a predetermined power is applied to each of the first target 102 and the second target 103 by the first power supply 105 and the second power supply 106 to form a terbium iron cobalt film on the substrate 110 to a thickness of 2000 Å. Let After that, the film forming chamber 101 was leaked, the glass substrate 110 was taken out, and the concentration of terbium atoms in the film was measured by a fluorescent X-ray analyzer.

2 and 3 show the changes over time in the terbium atom concentration and film thickness when the above operation is repeated, and are views showing changes in film quality and film formation rate, respectively.

In each figure, a line segment (a) shown by a solid line shows a change with time when constituent particles from the second target 103 are sequentially adjusted by the variable mechanism 104 so as to scatter toward the substrate 110, and a broken line. A line segment (b) indicated by indicates a change with time when the variable mechanism 104 is fixed.

The atomic concentration of terbium shown in FIG.
When the variable mechanism 104 is fixed, it gradually decreases as shown by the line segment (b), while the variable mechanism 10
When the scattering direction of the constituent particles of the second target 103 is adjusted by 4, it becomes constant as shown by the line segment (a).

The film forming rate shown in FIG.
When 4 is fixed, it decreases gradually as shown in the line segment (b), whereas when the scattering direction of the constituent particles of the second target 103 is adjusted by the variable mechanism 104, it becomes the line segment (a). It will be constant as shown.

As described above, in the present embodiment,
By adjusting the distance and angle of the target with respect to the substrate, the deposition rate and composition of the film could be stabilized. Further, since the constituent particles are scattered only in the substrate direction,
The consumption of the target can be suppressed, and the manufacturing cost of the substrate can be reduced.

FIG. 4 is a diagram showing a change over time in the terbium atom concentration when the above-described film forming operation by the sputtering apparatus shown in FIG. 1 is performed by changing the installation position of the substrate 110. Also in FIG. 4, as in FIGS. 2 and 3, the line segment (a) indicated by the solid line is changed to the second by the variable mechanism 104.
Shows the change over time when the constituent particles from the target 103 are adjusted so as to scatter toward the substrate 110, and the line segment (b) indicated by the broken line shows the change over time when the variable mechanism 104 is fixed. .

The atomic concentration of terbium can be changed by the variable mechanism 104.
When the variable mechanism 104 is fixed, it gradually increases as shown by the line segment (b), while
When the scattering direction of the constituent particles of the target 103 is adjusted, it becomes constant as shown by the line segment (a).

[Specific Example 2] In the sputtering apparatus shown in FIG. 1, dysprosium was used as the second target 103, and the other conditions were exactly the same as in Example 1, and a dysprosium-iron-cobalt film of 2000 Å was formed. Let After that, the film-forming material 101 is leaked and the substrate 110 is taken out, and the dysprosium atom concentration in the film is determined according to the first embodiment.
It measured similarly to.

FIG. 5 shows the change over time in the dysprosium atom concentration when the above operation is repeated.
It is a figure which shows the change of film quality.

In the figure, the line segment (a) shown by a solid line shows a change with time when the variable mechanism 104 adjusts the constituent particles from the second target 103 to scatter toward the substrate 110, and is shown by a broken line. The line segment (b) shown is the variable mechanism 1
The change with time when 04 is fixed is shown.

The atomic concentration of dysprosium shown in FIG. 5 gradually decreases when the variable mechanism 104 is fixed as shown by the line segment (b), whereas the variable mechanism 104 causes the second concentration to decrease. When the scattering direction of the constituent particles of the target 103 is adjusted, it becomes constant as shown by the line segment (a).

[Specific Example 3] FIG. 6 is a diagram showing the configuration of the second embodiment of the present invention.

The same film formation as in Example 1 was performed using the sputtering apparatus and alloy target as shown in FIG.

In this embodiment, an alloy target is placed in the film forming chamber and particles are formed on the substrate by the constituent particles from the target.

In the film forming chamber 601, a target 602 made of terbium iron cobalt is arranged facing the substrate 610. The target 602 is connected to a power source 605, and when power is supplied from the power source 605, constituent particles are scattered from the target 605 to form a film. Since the target 605 is an alloy of terbium iron-cobalt, constituent particles of different types are scattered on the substrate in different flight directions. The flight of each of these constituent particles changes according to the film forming operation, so the target 603 is placed on the variable mechanism 604 whose distance and angle with respect to the substrate 610 can be arbitrarily adjusted. The atmosphere inside the film formation chamber 601 is the same as that shown in FIG.
The film forming chamber 601 is controlled by an exhaust device 608 that exhausts the inside of the film forming chamber 601 through a vacuum valve 607, and a gas introduction valve 609 that supplies a predetermined gas to the film forming chamber 601.

FIG. 7 shows a change with time in the terbium atom concentration in the film when the film forming operation is repeated, and is a view showing the change in the film quality.

In the figure, the line segment (a) indicated by the broken line shows the change with time when the target 602 is adjusted by the variable mechanism 604 according to the change in the scattering direction of each constituent particle,
A line segment (b) shown by a solid line shows a change with time when the target mechanism 602 and the substrate 610 are fixed by the variable mechanism 604 so that each surface is not parallel to each other, and a line segment (c) shown by a dashed line. Shows a change with time when the target 602 and the substrate 610 are fixed so as to be parallel to each other by the variable mechanism 604.

The terbium atomic concentration is the target 602.
When the respective surfaces of the substrate 610 and the substrate 610 are fixed in parallel, the number gradually decreases as shown by the line segment (c), whereas when the target 602 is adjusted by the variable mechanism 604, it is shown by the line segment (a). So it will be constant. Further, when the target 602 and each surface of the substrate 610 are fixed by the variable mechanism 604 so that they are not parallel to each other at a constant angle, the terbium concentration in the film decreases, but the ratio of decrease is smaller than that when fixed in parallel. The small size improves the product yield.

[Specific Example 4] FIG. 8 is a diagram showing a configuration of a third embodiment of the present invention.

The same film formation as in Example 1 was carried out using a sputtering apparatus as shown in FIG.

In this embodiment, three targets in which the constituent particles fly differently are set in one film forming chamber, and the constituent particles from each target form a film on the substrate.

In the film forming chamber 801, the first target 8
02, the second target 803, and the third target 811 are arranged to face the substrate 810. The first target 802, the second target 803, and the third target 811 include a first power source 805 and a second power source 8.
06 and the third power source 813, respectively, and when power is supplied from each power source, constituent particles are scattered from each target to form a film on the substrate 810. In the present embodiment, as the first to third targets, those in which constituent particles scattered during film formation are scattered in a direction vertical to the target surface are often used as the first target, and scattered in an oblique direction in many cases. Used as the second and third targets. Therefore, the second target 803 and the third target 811 are respectively placed on the first variable mechanism 804 and the second variable mechanism 812 whose distance and angle with respect to the substrate 810 can be arbitrarily adjusted.

The atmosphere in the film forming chamber 801 is the vacuum valve 807, similar to that shown in FIGS. 1 and 6.
The film forming chamber 801 is controlled by an exhaust device 808 that exhausts the inside of the film forming chamber 801 through a vacuum valve 807 and a gas introduction valve 809 that supplies a predetermined gas to the film forming chamber 801.

In the sputtering apparatus shown in FIG.
The same film formation as in Example 1 was performed using terbium as the first target 802, iron as the second target 803, and cobalt as the third target 811.

FIG. 9 and FIG. 10 respectively show changes with time in the terbium atom concentration and the iron atom concentration when the film forming operation is repeated, and are diagrams showing changes in film quality.

In each figure, the line segment (a) indicated by the solid line is the first
Of the second target 803 and the third target 811 by the variable mechanism 804 and the second variable mechanism 812 of
Shows the change over time when the respective constituent particles from are adjusted so as to scatter in the direction of the substrate 810, and the line segment (b) indicated by the broken line indicates that the first variable mechanism 804 and the second variable mechanism 812 are fixed. The change over time is shown.

The terbium atom concentration shown in FIG. 9 and the iron atom concentration shown in FIG. 10 are shown in the line segment (b) when the first variable mechanism 804 and the second variable mechanism 812 are fixed. However, while the first variable mechanism 804 and the second variable mechanism 812 adjust the scattering direction of each constituent particle from the second target 803 and the third target 811, the line segment is decreased. It becomes constant as shown in (a).

In this embodiment, the second target 8
03 and third target 811, respectively substrate 8
Since the distance and the angle with respect to 10 can be adjusted individually, the stability of the film quality is further improved. Although not shown in the figure, the film forming rate was also the same.

Although the structure of the variable mechanism has not been described in detail in each of the embodiments described above,
A support supported by three extendable / contractible drive mechanisms, a stage rotatable about three axes, and the like are conceivable and are not particularly limited.

[0044]

Since the present invention is constructed as described above, it has the following effects.

In the first aspect, the distance and angle of the target with respect to the substrate can be adjusted to make the deposition rate and composition of the film formed on the substrate the same as in the initial stage of the film forming operation. Therefore, the deposition rate and composition of the film can be stabilized, and the film can be formed with high efficiency and low cost.

According to the second aspect of the present invention, since the distance and the angle with respect to the substrate can be adjusted for each of the plurality of targets, there is an effect that the above effect can be further improved. .

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a first exemplary embodiment of the present invention.

FIG. 2 is a diagram showing a change in film quality in the first embodiment.

FIG. 3 is a diagram showing a change in film forming rate in the first embodiment.

FIG. 4 is a diagram showing a change in film quality when the position of the substrate 110 in FIG. 1 is changed.

5 is a diagram showing a change in film quality when the type of a second target 103 in FIG. 1 is changed.

FIG. 6 is a diagram showing a configuration of a second exemplary embodiment of the present invention.

FIG. 7 is a diagram showing a change in film quality in the second embodiment.

FIG. 8 is a diagram showing a configuration of a third exemplary embodiment of the present invention.

FIG. 9 is a diagram showing a change in film quality in the third embodiment.

FIG. 10 is a diagram showing changes in film quality in the third embodiment.

[Explanation of symbols]

101, 601, 801 Film forming chamber 102,802 first target 103,803 second target 104,604 Variable mechanism 105,805 1st power supply 106,806 Second power supply 107,607,807 Vacuum valve 108,608,808 Exhaust device 109,609,809 Gas introduction valve 110,610,810 Substrate 602 target 605 power supply 804 First variable mechanism 811 Third target 812 Second variable mechanism 813 Third power supply

Claims (2)

[Claims] 1. A sputtering apparatus in which a substrate and a target are arranged to face each other, and constituent particles emitted from the target are deposited on the substrate to form a film, and the distance and angle of the target with respect to the substrate can be adjusted. The sputtering apparatus is provided with a variable mechanism for mounting the target. 2. The sputtering apparatus according to claim 1, wherein a plurality of targets arranged facing the substrate are provided, and at least one target is mounted on a variable mechanism provided individually. Sputtering equipment.