JPH05190409A - Method and apparatus for control of temperature of member to be irradiated - Google Patents
Method and apparatus for control of temperature of member to be irradiatedInfo
- Publication number
- JPH05190409A JPH05190409A JP4023262A JP2326292A JPH05190409A JP H05190409 A JPH05190409 A JP H05190409A JP 4023262 A JP4023262 A JP 4023262A JP 2326292 A JP2326292 A JP 2326292A JP H05190409 A JPH05190409 A JP H05190409A
- Authority
- JP
- Japan
- Prior art keywords
- illuminated
- mirror
- temperature
- receiving surface
- temperature distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は理化学研究、分析装置、
半導体製造装置等に広く利用されるシンクロトロン放射
光または高強度レーザー光を照明光とするレンズ、ミラ
ー等の被照明部材の温度制御方法およびその装置に関
し、特に、照明光の強度分布等が、被照部材の熱歪によ
って変化するのを防ぐための被照明部材の温度制御方法
およびその装置に関するものである。The present invention relates to physics and chemistry research, analytical equipment,
Lenses that use synchrotron radiation or high-intensity laser light as illumination light that is widely used in semiconductor manufacturing equipment, etc. The present invention relates to a method for controlling a temperature of a member to be illuminated and an apparatus for controlling the temperature of the member to be illuminated, which are prevented from being changed by thermal strain.
【０００２】[0002]
【従来の技術】近年、シンクロトロン放射光やエキシマ
レーザー等の高強度の照明光が開発され、これを用いた
理化学研究、分析、製造技術等が注目され、それらの研
究開発が盛んになってきている。前記高強度の照明光を
用いる装置では、反射、透過、集光、発散、回折、分
光、偏光、結像等のために種々のレンズ、ミラー等を必
要とするが、使用される光線強度が高いため、多大な熱
負荷によるミラーやレンズ等の光学系の変形が問題とな
ってきた。2. Description of the Related Art In recent years, high-intensity illumination light such as synchrotron radiation and excimer laser has been developed, and physicochemical research, analysis, manufacturing technology and the like using this have attracted attention, and their research and development have become popular. ing. The device using the high-intensity illumination light requires various lenses, mirrors, etc. for reflection, transmission, focusing, divergence, diffraction, spectroscopy, polarization, image formation, etc. Since it is expensive, deformation of optical systems such as mirrors and lenses due to a large heat load has become a problem.
【０００３】特に、シンクロトロン放射光やエキシマレ
ーザー等の高強度の照明光を用いた半導体露光装置にお
いては、照明光の反射、収束および拡大等を行うミラー
やレンズ、さらにはレチクルやマスクの温度変化および
温度分布の変化による熱歪が、精度向上の大きな障害と
なる。特に、シンクロトロン放射光および真空紫外線等
の電磁波を利用する場合は、照明光のエネルギーの減衰
を防ぐために、ミラー、レンズ等の光学系およびマスク
は、真空室または減圧室内に配置されるのが一般的であ
り、照明光によって前記ミラー、レンズおよびマスク等
の被照明部材（以下、「被照明部材」という）が加熱さ
れると、雰囲気ガスによる伝導および対流による熱放散
がほとんどないために、温度上昇が著しく、温度変化お
よび温度分布の変化による熱歪が、照明光の強度分布等
を著しく変化させて、露光むらの原因となる。Particularly, in a semiconductor exposure apparatus using high intensity illumination light such as synchrotron radiation or excimer laser, the temperature of mirrors and lenses for reflecting, converging and enlarging the illumination light, as well as the temperature of the reticle and mask. Thermal strain due to changes and changes in temperature distribution is a major obstacle to improving accuracy. In particular, when using electromagnetic waves such as synchrotron radiation and vacuum ultraviolet rays, the optical system such as mirrors and lenses and the mask are arranged in a vacuum chamber or a decompression chamber in order to prevent the energy of illumination light from being attenuated. Generally, when an illuminated member such as the mirror, lens and mask (hereinafter referred to as “illuminated member”) is heated by illumination light, there is almost no heat dissipation due to conduction and convection due to atmospheric gas. The temperature rises remarkably, and the thermal strain due to the temperature change and the temperature distribution change remarkably changes the intensity distribution of illumination light and the like, which causes uneven exposure.
【０００４】そこで、前記被照明部材を水冷ジャケット
等によって、冷却する手段が種々開発され、１例として
Ｔ．Ｏｖｅｒｓｌｕｉｚｅｎ，ｅｔ ａｌ．Ｒｅｖ．Ｓ
ｃｉ．Ｉｎｓｔｒｕｍ．６０，１４９３（１９８９）に
記載されたものがある。Therefore, various means for cooling the illuminated member with a water cooling jacket or the like have been developed, and as an example, T.I. Oversluizen, et al. Rev. S
ci. Instrum. 60 , 1493 (1989).
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記従
来の技術においては、ミラー、レンズおよびマスク等の
被照明部材の、照明光が入射する表面すなわち受光面の
温度分布を制御することは不可能である。高精度の半導
体露光装置においては、前述のようにミラー、レンズあ
るいはマスク等の温度分布の変化が照明光の強度分布等
を変化させて、露光むらの原因となるため、上述のよう
に被照明部材の温度分布が変化するのを予測して設計上
の補正を行うか、あるいは光学系に機構上の補正手段を
加える等の工夫がなされているが、その装置は複雑であ
り、また補正の度ごとに長い熱的調整のための待機時間
を要する。１例として、照明光の照射開始時には、被照
明部材の熱的安定状態を得るために数分から長い場合に
は１時間以上の待機時間を必要とすることが報告されて
いる。｛Ｈ．Ｍａｅｚａｗａ，ｅｔ ａｌ．Ｒｅｖ．Ｓ
ｃｉ．Ｉｎｓｔｒｕｍ．６０，１９７９ （１９８
９）｝他方、非照射時にのみ被照明部材を加熱して照射
時と同様の温度に維持することで、立上りの待機時間を
短縮する方法が提案されているが（特開平２−２４０９
１３参照）、これらは被照明部材の受光面の温度分布を
制御するものではない。However, in the above-mentioned conventional technique, it is impossible to control the temperature distribution of the surface of the illuminated member such as the mirror, lens and mask on which the illumination light is incident, that is, the light receiving surface. is there. In a high-precision semiconductor exposure apparatus, changes in the temperature distribution of mirrors, lenses, masks, etc., as described above, change the intensity distribution of illumination light, etc., causing unevenness in exposure. The device is complicated and the correction of the design is made by predicting that the temperature distribution of the member changes, or the mechanical correction means is added to the optical system. Each time there is a long waiting time for thermal adjustment. As one example, it has been reported that at the start of irradiation of illumination light, a waiting time of 1 hour or more is required in order to obtain a thermally stable state of the illuminated member, if it is several minutes to a long time. {H. Maezawa, et al. Rev. S
ci. Instrum. 60 , 1979 (198
9)} On the other hand, there has been proposed a method of heating the member to be illuminated only during non-irradiation and maintaining the same temperature as that during irradiation to shorten the stand-by time for start-up (JP-A-2-2409).
13), these do not control the temperature distribution of the light receiving surface of the illuminated member.
【０００６】本発明は、上記従来の技術の有する問題点
に鑑みてなされたものであり、照明光の照射開始時およ
びその照射中に、ミラー、レンズおよびマスク等の被照
明部材の受光面の熱歪によって、前記照明光の強度分布
等が変化するのを防止する被照明部材の温度制御方法お
よびその装置を提供することを目的とする。The present invention has been made in view of the problems of the above-mentioned prior art, and it is intended that the light receiving surface of a member to be illuminated such as a mirror, a lens and a mask is started at the start of and during the irradiation of the illumination light. It is an object of the present invention to provide a temperature control method for a member to be illuminated and an apparatus thereof for preventing the intensity distribution of the illumination light from changing due to thermal strain.
【０００７】[0007]
【課題を解決するための手段】上記の目的を達成するた
めに本発明の被照明部材の温度制御方法は、被照明部材
の受光面の受光中の熱歪を防止する被照明部材の温度制
御方法であって、少くとも前記受光面が受光を開始する
以前から、予め計測しておいた前記受光面の受光中の熱
的安定状態における温度分布と同様の温度分布を、前記
受光面に発生させることを特徴とする。In order to achieve the above-mentioned object, a temperature control method for an illuminated member according to the present invention is a temperature control for an illuminated member which prevents thermal distortion during light reception on a light receiving surface of the illuminated member. A temperature distribution similar to the temperature distribution in a thermally stable state during light reception of the light-receiving surface measured at least before the light-receiving surface starts receiving light. It is characterized in that
【０００８】また本発明の被照明部材の温度制御装置
は、被照明部材の受光面の受光中の温度分布を測定する
測定手段と、前記受光面を加熱する加熱手段と、前記測
定手段の出力に応じて、前記加熱手段によって加熱され
る前記受光面の温度分布を制御するための温度調節手段
とからなることを特徴とする。Further, the temperature control device for the illuminated member of the present invention comprises a measuring means for measuring a temperature distribution during light reception on the light receiving surface of the illuminated member, a heating means for heating the light receiving surface, and an output of the measuring means. According to the above, it comprises a temperature adjusting means for controlling the temperature distribution of the light receiving surface heated by the heating means.
【０００９】[0009]
【作用】ミラー、レンズ、マスクおよびレチクル等の被
照明部材の受光面を、照明光の照射開始前に、受光中の
温度分布と同様の温度分布に加熱しておくことによっ
て、照明光の照射開始時に、受光面の熱歪によって、受
光面の焦点距離や照明光の強度分布が変化するのを防止
する。The irradiation of the illumination light is performed by heating the light receiving surface of the illuminated member such as the mirror, the lens, the mask and the reticle to a temperature distribution similar to the temperature distribution during the reception of the illumination light before starting the irradiation of the illumination light. At the time of starting, the focal length of the light receiving surface and the intensity distribution of the illumination light are prevented from changing due to thermal strain of the light receiving surface.
【００１０】また、照明光の照射中に、照明光の全体強
度が変化しても、受光面の温度分布を一定に保つことに
よって、受光面に熱歪が発生するのを防止する。Further, even if the total intensity of the illumination light changes during the irradiation of the illumination light, the temperature distribution on the light receiving surface is kept constant to prevent the occurrence of thermal strain on the light receiving surface.
【００１１】[0011]
【実施例】本発明の実施例を図面に基づいて説明する。Embodiments of the present invention will be described with reference to the drawings.
【００１２】図１は、第１実施例を示す模式図であっ
て、Ｘ線露光装置の被照明部材である凸状のミラー１
は、冷媒流路２ａをもつミラー保持器２によってその反
射面を下向きに支持される。荷電粒子蓄積リング（以
下、「ＳＯＲリング」という）の発光点（図示せず）か
ら引出されたシンクロトロン放射光（以下、「Ｘ線」と
いう）３は、上記反射面によって反射、拡大され、拡大
されたＸ線は、垂直に保持されたウエハ４を露光する。
なお、上記ウエハ４の露光量を調節する露光時間制御シ
ャッターおよびマスクについては周知の通りであり、図
１においては省略する。FIG. 1 is a schematic view showing a first embodiment, which is a convex mirror 1 which is an illuminated member of an X-ray exposure apparatus.
Is supported by the mirror holder 2 having the coolant channel 2a with its reflection surface facing downward. Synchrotron radiation light (hereinafter, referred to as “X-ray”) 3 extracted from an emission point (not shown) of a charged particle storage ring (hereinafter, referred to as “SOR ring”) is reflected and expanded by the reflection surface, The magnified X-ray exposes the wafer 4 held vertically.
The exposure time control shutter and the mask for adjusting the exposure amount of the wafer 4 are well known, and are omitted in FIG.
【００１３】ミラー１の反射面の温度分布は、測定手段
である赤外線カメラ５によって検出し、その検出結果
は、ミラー１の反射面のＸ線が入射しない部分に取付け
られた熱電対６によってより正確な値に補正される。ミ
ラー１の反射面の温度分布を制御する温度制御装置は、
加熱手段である赤外線ヒーター７、反射板７ａおよび温
度調節手段であるアパーチャ８からなり、アパーチャ８
は、調節自在な開口部および該開口部に設けられた調節
自在なフィルターである赤外線吸収フィルター（図示せ
ず）によって、赤外線ヒーター７から放出される熱を部
分的に減量または遮断する。上記開口部および赤外線吸
収フィルターは、赤外線カメラ５および熱電対６の検出
値に応じて制御され、赤外線ヒーター７から、ミラー１
の反射面に到達する熱量の分布を制御することで、ミラ
ー１の反射面に所定の温度分布を発生させる。制御回路
９は、赤外線カメラ５および熱電対６の出力に応じて赤
外線ヒーター７の出力を制御する。The temperature distribution on the reflecting surface of the mirror 1 is detected by an infrared camera 5 which is a measuring means, and the detection result is obtained by a thermocouple 6 attached to a portion of the reflecting surface of the mirror 1 where X-rays do not enter. Corrected to an accurate value. The temperature control device that controls the temperature distribution on the reflecting surface of the mirror 1 is
An infrared heater 7 as a heating means, a reflector 7a, and an aperture 8 as a temperature adjusting means are provided.
Partially reduces or blocks the heat emitted from the infrared heater 7 by an adjustable opening and an infrared absorption filter (not shown) which is an adjustable filter provided in the opening. The opening and the infrared absorption filter are controlled according to the detection values of the infrared camera 5 and the thermocouple 6, and the infrared heater 7 causes the mirror 1 to move.
By controlling the distribution of the amount of heat reaching the reflecting surface of the mirror 1, a predetermined temperature distribution is generated on the reflecting surface of the mirror 1. The control circuit 9 controls the output of the infrared heater 7 according to the outputs of the infrared camera 5 and the thermocouple 6.
【００１４】次に図１の装置を用いて行った実験例を説
明する。Next, an example of an experiment conducted by using the apparatus shown in FIG. 1 will be described.
【００１５】実験例 蓄積電流２１５ｍＡのＳＯＲリングから引出されたＸ線
を入射角２°で曲率５０ｍのミラーの反射面に入射さ
せ、照射開始後、約１時間経過した時、ミラーの反射面
の温度分布および該反射面によって拡大されたＸ線の強
度分布をウエハ４の位置において測定した結果を、それ
ぞれ図２の実線による曲線ａ、図３の実線による曲線ｃ
で示す。このときミラーに吸収されるエネルギーは平均
５０ｍＷ／ｍｍ2 であった。Experimental Example X-rays extracted from an SOR ring with a stored current of 215 mA were made incident on the reflecting surface of a mirror having a curvature of 50 m at an incident angle of 2 °, and about 1 hour after the start of irradiation, the reflecting surface of the mirror The results obtained by measuring the temperature distribution and the intensity distribution of the X-rays magnified by the reflecting surface at the position of the wafer 4 are shown by a solid curve a in FIG. 2 and a solid curve c in FIG. 3, respectively.
Indicate. The energy absorbed by the mirror at this time was 50 mW / mm 2 on average.
【００１６】次に、Ｘ線の照射を停止してミラーを常温
にもどし、図２の曲線ａに基づいて、アパーチャの開口
部および赤外線吸収フィルターをそれぞれ調節した後、
赤外線ヒーターによってミラーの反射面を加熱した。該
反射面の温度分布が図２の曲線ａに一致した状態で熱的
に安定したのを確認の後、Ｘ線の照射を再開し、同時に
赤外線ヒーターによる加熱を停止した。この直後に再び
ミラーの反射面の温度分布とＸ線の強度分布を測定し
た。温度分布の測定結果は図２の破線による曲線ｂに示
す。Ｘ線の強度分布の測定結果は、図３の実線による曲
線Ｃとほぼ完全に一致した。このときＳＯＲリングの蓄
積電流は２０７ｍＡ、ミラーに吸収されるエネルギーは
平均４８ｍＷ／ｍｍ2 であった。Next, the irradiation of X-rays is stopped, the mirror is returned to room temperature, and the aperture of the aperture and the infrared absorption filter are respectively adjusted based on the curve a in FIG.
The reflective surface of the mirror was heated by an infrared heater. After confirming that the temperature distribution of the reflecting surface was thermally stable in the state of matching with the curve a in FIG. 2, the X-ray irradiation was restarted, and at the same time, the heating by the infrared heater was stopped. Immediately after this, the temperature distribution on the reflecting surface of the mirror and the X-ray intensity distribution were measured again. The measurement result of the temperature distribution is shown by the curved line b in FIG. The measurement result of the X-ray intensity distribution almost completely coincided with the solid curve C in FIG. At this time, the accumulated current of the SOR ring was 207 mA, and the energy absorbed by the mirror was 48 mW / mm 2 on average.
【００１７】上記の実験例から、Ｘ線の照射開始時に、
ミラーの反射面の温度分布が上述の熱的に安定した状態
に到達していれば、熱的調整のために長い待機時間を必
要とすることなく、所定のＸ線の強度分布を得ることが
できる。From the above experimental example, at the start of X-ray irradiation,
When the temperature distribution on the reflecting surface of the mirror reaches the above-mentioned thermally stable state, a predetermined X-ray intensity distribution can be obtained without requiring a long waiting time for thermal adjustment. it can.
【００１８】また、Ｘ線の露光を継続すると、ＳＯＲリ
ングの蓄積電流の減衰によって、Ｘ線の強度が全体的に
低下するが、本実施例においては、Ｘ線の露光中、赤外
線カメラおよび熱電対によってミラーの反射面の温度を
連続的にモニターして、該反射面の温度低下を検出し、
制御回路によって赤外線ヒーターからの熱を付加するこ
とによって、上記反射面の熱歪による変化を防ぐ。Further, when the X-ray exposure is continued, the X-ray intensity is lowered as a whole due to the attenuation of the accumulated current of the SOR ring. However, in this embodiment, the infrared camera and the thermoelectric generator are used during the X-ray exposure. The temperature of the reflecting surface of the mirror is continuously monitored by a pair to detect the temperature drop of the reflecting surface,
By applying heat from the infrared heater by the control circuit, the change due to thermal strain of the reflecting surface is prevented.
【００１９】Ｘ線の強度が全体的に低下した場合は、ミ
ラーの反射面における全体温度は下降するが温度分布の
曲線形状はほとんど変化しないため、赤外線ヒーターの
出力を増加させるだけでよい。When the intensity of the X-rays is totally lowered, the total temperature on the reflecting surface of the mirror is lowered but the curve shape of the temperature distribution hardly changes. Therefore, it is only necessary to increase the output of the infrared heater.
【００２０】図４は第２実施例を示す模式図であって、
本実施例においては、第１実施例と同様に、Ｘ線露光装
置のミラーの温度分布を制御するとともに、前記ミラー
の反射面の温度分布を制御する手段と同様の手段を用い
て、被照明部材であるマスクの熱歪による精度低下を防
止するものである。FIG. 4 is a schematic diagram showing a second embodiment,
In this embodiment, as in the first embodiment, the temperature distribution of the mirror of the X-ray exposure apparatus is controlled, and the same means as the means for controlling the temperature distribution of the reflecting surface of the mirror is used to illuminate the object to be illuminated. It is intended to prevent the accuracy deterioration due to the thermal strain of the mask which is a member.
【００２１】第１実施例と同様のミラー（図示せず）に
よって拡大されたＸ線１３は露光時間制御シャッター２
１の開口を経て、Ｘ線透過膜２２ａおよびＸ線吸収体２
２ｂからなるマスク２２を照射し、マスクパターン２２
ｂをウエハ１４のレジスト１４ａに焼付ける。マスク２
２は、マスク支持体２３によって支持されており、マス
ク２２の受光面の温度分布を制御する温度制御装置は、
測定手段である赤外線カメラ等の温度分布を検出する装
置（図示せず）、加熱手段である１対の赤外線ヒーター
２４，２５，各赤外線ヒーター２４，２５にそれぞれ設
けられた反射板２４ａ，２５ａ，温度調節手段であるア
パーチャ２４ｂ，２５ｂおよびシャッター２４ｃ，２５
ｃからなる。上記各アパーチャ２４ｂ，２５ｂはいずれ
も第１実施例のアパーチャと同様のものであり、上述の
赤外線カメラ等の検出装置の出力によって制御され、各
赤外線ヒーター２４，２５から供給される熱を部分的に
遮断または削減することで、マスク２２の受光面に所定
の温度分布を発生させる。The X-ray 13 magnified by the same mirror (not shown) as in the first embodiment is used as the exposure time control shutter 2.
X-ray transmission film 22a and X-ray absorber 2 through the opening 1.
Irradiate the mask 22 composed of 2b to form the mask pattern 22.
b is baked on the resist 14a of the wafer 14. Mask 2
2 is supported by a mask support 23, and a temperature control device for controlling the temperature distribution of the light receiving surface of the mask 22 is
A device (not shown) for detecting temperature distribution such as an infrared camera which is a measuring means, a pair of infrared heaters 24 and 25 which is a heating means, and reflection plates 24a and 25a provided on the infrared heaters 24 and 25, respectively. Apertures 24b and 25b and shutters 24c and 25 which are temperature adjusting means
It consists of c. Each of the apertures 24b and 25b is similar to the aperture of the first embodiment, and is controlled by the output of the detection device such as the infrared camera described above to partially heat the infrared heaters 24 and 25. By shutting off or reducing it, a predetermined temperature distribution is generated on the light receiving surface of the mask 22.
【００２２】また各シャッター２４ｃ，２５ｃは、マス
ク２２の各点の露光時間を制御する露光時間制御シャッ
ター２１と連動して移動するもので、該露光時間制御シ
ャッター２１によってＸ線が遮断されたマスク２２の表
面部分のみが、選択的に各赤外線ヒーター２４，２５に
よって加熱されるように制御される。The shutters 24c and 25c move in conjunction with an exposure time control shutter 21 that controls the exposure time of each point on the mask 22, and the masks whose X-rays are blocked by the exposure time control shutter 21. Only the surface portion of 22 is controlled to be selectively heated by each infrared heater 24, 25.
【００２３】すなわち、露光時間制御シャッター２１に
よってマスク２２の受光面に周期的に発生する温度むら
が、各赤外線ヒーター２４，２５にそれぞれ附属するシ
ャッター２４ｃ，２５ｃによって補正される。That is, the temperature unevenness periodically generated on the light receiving surface of the mask 22 by the exposure time control shutter 21 is corrected by the shutters 24c and 25c attached to the infrared heaters 24 and 25, respectively.
【００２４】実験例 本実施例の装置を用いて窒化シリコン２μｍ厚さのＸ線
透過膜上に金の吸収体パターンを形成したマスクを用
い、マスク、ウエハ間距離を７０μｍとして露光を行っ
た。露光されたウエハのパターン歪は０．０８μｍであ
った。Experimental Example Using the apparatus of this example, a mask having a gold absorber pattern formed on an X-ray transparent film having a thickness of 2 μm of silicon nitride was used, and exposure was performed with a mask-wafer distance of 70 μm. The pattern distortion of the exposed wafer was 0.08 μm.
【００２５】次にマスクの温度分布を制御する手段を用
いることなく、上記と同じ条件で実験を行ったところ、
パターン歪は０．０２３μｍであった。Next, an experiment was conducted under the same conditions as described above without using a means for controlling the temperature distribution of the mask.
The pattern distortion was 0.023 μm.
【００２６】図５は第３実施例を示す説明図であって、
本実施例の被照明部材は軟Ｘ線縮小投影露光装置の縮小
ミラーである。FIG. 5 is an explanatory view showing the third embodiment,
The illuminated member of this embodiment is a reduction mirror of a soft X-ray reduction projection exposure apparatus.
【００２７】エキシマレーザー光線３１は、レンズ３２
で集光され、サマリウムＳｍ材料のターゲット３３に照
射され、ターゲット３３より、レーザープラズマのＸ線
３４が発生する。シリコンのフィルタ３５およびアパー
チャ３６を通過したＸ線３４は反射型マスク３７に照射
され、さらに該反射型マスク３７から反射したＸ線３４
は縮小ミラー３８で反射され、シャッター３９ａを経
て、ウエハ３９に反射型マスク３７の像を結ぶ。反射型
マスク３７のホルダー４０は、該反射型マスク３７を冷
却するための冷媒流路４１を備えている。縮小ミラー３
８も同様にミラーホルダー４２の冷媒流路４３によって
間接的に冷却されている。The excimer laser beam 31 has a lens 32.
Then, the target 33 made of samarium Sm material is irradiated with the light, and X-rays 34 of laser plasma are generated from the target 33. The X-rays 34 that have passed through the silicon filter 35 and the aperture 36 are applied to the reflective mask 37, and the X-rays 34 reflected from the reflective mask 37 are also reflected.
Is reflected by the reduction mirror 38, passes through the shutter 39a, and forms an image of the reflective mask 37 on the wafer 39. The holder 40 of the reflective mask 37 has a coolant channel 41 for cooling the reflective mask 37. Reduction mirror 3
Similarly, 8 is indirectly cooled by the coolant passage 43 of the mirror holder 42.
【００２８】縮小ミラー３８の受光面の温度分布は、測
定手段である赤外線カメラ４６によって測定され、その
測定値は、縮小ミラー３８の受光面に隣接して配置され
た熱電対４７によって補正される。加熱手段であるグロ
ーバーランプ４４は、縮小ミラー３８の受光面を加熱す
るもので、グローバーランプ４４から放射される熱は、
第１実施例のアパーチャと同様のアパーチャ４５によっ
て部分的に遮断または削減されて、縮小ミラー３８の受
光面に所定の温度分布を発生させる。The temperature distribution on the light receiving surface of the reduction mirror 38 is measured by an infrared camera 46 which is a measuring means, and the measured value is corrected by a thermocouple 47 arranged adjacent to the light reception surface of the reduction mirror 38. .. The glow bar lamp 44, which is a heating means, heats the light receiving surface of the reduction mirror 38, and the heat emitted from the glow bar lamp 44 is
An aperture 45 similar to the aperture of the first embodiment partially blocks or reduces the aperture to generate a predetermined temperature distribution on the light receiving surface of the reduction mirror 38.
【００２９】本実施例の操作は次のとおりである。The operation of this embodiment is as follows.
【００３０】まず実験によって、ウエハ３９を露光中の
縮小ミラー３８の熱的安定状態における該縮小ミラーの
受光面の温度分布を、赤外線カメラ４６および熱電体４
７によって測定する。また、この状態における縮小ミラ
ー３８の熱歪による焦点位置のずれも測定する。ウエハ
３９の露光開始に当っては、前記実験によって測定され
た縮小ミラーの受光面の温度分布に応じてアパーチャ４
５を調節するとともに、上記の縮小ミラー３８の焦点位
置のずれに応じてウエハ３９の位置を調整する。グロー
バーランプ４４の加熱によって縮小ミラー３８の受光面
が所定の温度分布に到達したのを確認した後、露光を開
始する。First, by an experiment, the temperature distribution of the light receiving surface of the reduction mirror 38 during the exposure of the wafer 39 in a thermally stable state is shown by the infrared camera 46 and the thermoelectric body 4.
Measure by 7. Further, the shift of the focal position due to the thermal strain of the reduction mirror 38 in this state is also measured. When the exposure of the wafer 39 is started, the aperture 4 is adjusted according to the temperature distribution of the light receiving surface of the reduction mirror measured by the experiment.
5 is adjusted, and the position of the wafer 39 is adjusted according to the shift of the focal position of the reduction mirror 38. After confirming that the light receiving surface of the reduction mirror 38 has reached a predetermined temperature distribution by heating the glow bar lamp 44, exposure is started.
【００３１】露光の開始時に、縮小ミラーはほぼ熱的安
定状態にあるため、熱的調整のための待機時間をほとん
ど必要とせず、加えて予め縮小ミラーの熱歪による焦点
の位置ずれを補正してあるため、転写パターンの焦点ぼ
けが発生することはない。At the start of exposure, the reduction mirror is in a substantially thermally stable state, so that it requires almost no waiting time for thermal adjustment. In addition, the focal position shift due to thermal distortion of the reduction mirror is corrected in advance. Therefore, defocus of the transfer pattern does not occur.
【００３２】なお、上述の第１および第２の実施例にお
いては、被照明部材であるミラーおよびマスクが炭化ケ
イ素（ＳｉＣ）を素材とするものであるため、赤外線ヒ
ーターとして２μｍから３０μｍの波長の赤外線を放射
する赤外線ランプを使用することで、上記被照明部材の
受光面を効果的に加熱することができる。In the first and second embodiments described above, since the mirror and the mask, which are the members to be illuminated, are made of silicon carbide (SiC), the infrared heater has a wavelength of 2 μm to 30 μm. By using an infrared lamp that emits infrared rays, the light receiving surface of the illuminated member can be effectively heated.
【００３３】また、第３の実施例においては、被照明部
材である縮小ミラーが石英で作られているため、４μｍ
以上の波長の赤外線を放射するグローバーランプを用い
ることで、熱伝導率の低い石英を効果的に加熱する。Further, in the third embodiment, since the reduction mirror as the illuminated member is made of quartz, it is 4 μm.
By using a glow bar lamp that emits infrared rays having the above wavelength, quartz having low thermal conductivity is effectively heated.
【００３４】[0034]
【発明の効果】本発明は、上述のとおり構成されている
ので、以下に記載するような効果を奏する。Since the present invention is configured as described above, it has the following effects.
【００３５】照明光の照射開始時およびその照射中に、
ミラー、レンズ、マスク、レチクル等の被照明部材の受
光面の熱歪によって前記照明光の強度分布等が変化する
のを防ぐことができる。従って、照明光の照射開始直後
から安定した照明光を得ることができる。At the start and during the irradiation of the illumination light,
It is possible to prevent the intensity distribution and the like of the illumination light from changing due to thermal strain of the light receiving surface of the illuminated member such as a mirror, a lens, a mask, and a reticle. Therefore, stable illumination light can be obtained immediately after the start of illumination light irradiation.
【００３６】また上記被照明部材を用いる半導体露光装
置等の、照明光の強度むら等による精度の低下を防ぐこ
とができる。Further, it is possible to prevent deterioration of accuracy due to unevenness of the intensity of illumination light in a semiconductor exposure apparatus using the above-mentioned illuminated member.
【図１】第１実施例を説明する模式図である。FIG. 1 is a schematic diagram illustrating a first embodiment.
【図２】第１実施例のミラーの反射面の温度分布を示す
図である。FIG. 2 is a diagram showing a temperature distribution on a reflecting surface of the mirror of the first embodiment.
【図３】第１実施例のウエハ上のＸ線強度分布を示す図
である。FIG. 3 is a diagram showing an X-ray intensity distribution on a wafer according to the first embodiment.
【図４】第２実施例を説明する模式図である。FIG. 4 is a schematic diagram illustrating a second embodiment.
【図５】第３実施例を説明する模式図である。FIG. 5 is a schematic diagram illustrating a third embodiment.
【符号の説明】 １ ミラー ３，１３，３４ Ｘ線 ４，１４，３９ ウエハ ５，４６ 赤外線カメラ ７，２４，２５ 赤外線ヒーター ８，２４ａ，２５ａ，４５ アパーチャ ９ 制御回路 ２１ 露光時間制御シャッター ２２ マスク ２４ｃ，２５ｃ シャッター ３７ 反射型マスク ３８ 縮小ミラー ４４ グローバーランプ[Explanation of reference numerals] 1 mirror 3,13,34 X-ray 4,14,39 wafer 5,46 infrared camera 7,24,25 infrared heater 8,24a, 25a, 45 aperture 9 control circuit 21 exposure time control shutter 22 mask 24c, 25c Shutter 37 Reflective mask 38 Reduction mirror 44 Grover lamp
Claims (5)
止する被照明部材の温度制御方法であって、少くとも前
記受光面が受光を開始する以前から、予め計測しておい
た前記受光面の受光中の熱的安定状態における温度分布
と同様の温度分布を、前記受光面に発生させることを特
徴とする被照明部材の温度制御方法。1. A method for controlling a temperature of a member to be illuminated for preventing thermal strain during light reception of a light receiving surface of the member to be illuminated, which is measured in advance at least before the light receiving surface starts to receive light. A temperature control method for an illuminated member, wherein a temperature distribution similar to that in a thermally stable state during light reception on the light receiving surface is generated on the light receiving surface.
を測定する測定手段と、前記受光面を加熱する加熱手段
と、前記測定手段の出力に応じて、前記加熱手段によっ
て加熱される前記受光面の温度分布を制御するための温
度調節手段とからなる被照明部材の温度制御装置。2. A measuring means for measuring a temperature distribution of a light receiving surface of a member to be illuminated during light reception, a heating means for heating the light receiving surface, and heating by the heating means according to an output of the measuring means. A temperature control device for a member to be illuminated, comprising: a temperature adjusting means for controlling the temperature distribution of the light receiving surface.
る熱の一部を選択的に吸収する調節自在なフィルターを
備えたアパーチャからなることを特徴とする請求項２記
載の被照明部材の温度制御装置。3. The illuminated member according to claim 2, wherein the temperature adjusting means comprises an aperture provided with an adjustable filter that selectively absorbs a part of the heat supplied from the heating means. Temperature control device.
を反射するミラーであることを特徴とする請求項２また
は３記載の被照明部材の温度制御装置。4. The temperature control device for an illuminated member according to claim 2, wherein the illuminated member is a mirror that reflects the exposure light of the semiconductor exposure apparatus.
であって、温度調節手段が、前記半導体露光装置の露光
時間制御シャッターと連動するシャッターを有すること
を特徴とする請求項２または３記載の被照明部材の温度
制御装置。5. The member to be illuminated is a mask for a semiconductor exposure apparatus, and the temperature adjusting means has a shutter that is interlocked with an exposure time control shutter of the semiconductor exposure apparatus. Control device for the illuminated member.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02326292A JP3238737B2 (en) | 1992-01-13 | 1992-01-13 | Method and apparatus for controlling temperature of illuminated member |
| DE69220868T DE69220868T2 (en) | 1991-09-07 | 1992-09-04 | System for stabilizing the shapes of optical elements, exposure device using this system and method for manufacturing semiconductor devices |
| EP92308030A EP0532236B1 (en) | 1991-09-07 | 1992-09-04 | System for stabilizing the shapes of optical elements, exposure apparatus using this system and method of manufacturing semiconductor devices |
| CA002077572A CA2077572C (en) | 1991-09-07 | 1992-09-04 | Method of and apparatus for stabilizing shapes of objects, such as optical elements, as well as exposure apparatus using same and method of manufacturing semiconductr devices |
| US08/270,794 US5390228A (en) | 1991-09-07 | 1994-07-05 | Method of and apparatus for stabilizing shapes of objects, such as optical elements, as well as exposure apparatus using same and method of manufacturing semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02326292A JP3238737B2 (en) | 1992-01-13 | 1992-01-13 | Method and apparatus for controlling temperature of illuminated member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05190409A true JPH05190409A (en) | 1993-07-30 |
| JP3238737B2 JP3238737B2 (en) | 2001-12-17 |
Family
ID=12105691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02326292A Expired - Fee Related JP3238737B2 (en) | 1991-09-07 | 1992-01-13 | Method and apparatus for controlling temperature of illuminated member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3238737B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005175255A (en) * | 2003-12-12 | 2005-06-30 | Canon Inc | Exposure device |
| JPWO2005022614A1 (en) * | 2003-08-28 | 2007-11-01 | 株式会社ニコン | Exposure method and apparatus, and device manufacturing method |
| JP2007536754A (en) * | 2004-05-06 | 2007-12-13 | カール ツァイス レーザー オプティクス ゲーエムベーハー | Optical components with improved thermal behavior |
| JP2009081419A (en) * | 2007-08-14 | 2009-04-16 | Asml Netherlands Bv | Lithographic equipment and control method of thermal optical manipulator |
| JP2012527099A (en) * | 2009-05-16 | 2012-11-01 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Projection exposure apparatus for semiconductor lithography comprising an optical correction structure |
| JP2013502063A (en) * | 2009-08-11 | 2013-01-17 | ズス・マイクロテック・リソグラフィ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | Method and apparatus for maintaining a constant mask size |
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1992
- 1992-01-13 JP JP02326292A patent/JP3238737B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2005022614A1 (en) * | 2003-08-28 | 2007-11-01 | 株式会社ニコン | Exposure method and apparatus, and device manufacturing method |
| JP2005175255A (en) * | 2003-12-12 | 2005-06-30 | Canon Inc | Exposure device |
| JP4666908B2 (en) * | 2003-12-12 | 2011-04-06 | キヤノン株式会社 | Exposure apparatus, measurement method, and device manufacturing method |
| JP2007536754A (en) * | 2004-05-06 | 2007-12-13 | カール ツァイス レーザー オプティクス ゲーエムベーハー | Optical components with improved thermal behavior |
| JP2009081419A (en) * | 2007-08-14 | 2009-04-16 | Asml Netherlands Bv | Lithographic equipment and control method of thermal optical manipulator |
| JP2011211237A (en) * | 2007-08-14 | 2011-10-20 | Asml Netherlands Bv | Lithographic projection apparatus |
| US8064151B2 (en) | 2007-08-14 | 2011-11-22 | Asml Netherlands B.V. | Lithographic apparatus and thermal optical manipulator control method |
| US8861102B2 (en) | 2007-08-14 | 2014-10-14 | Asml Netherlands B.V. | Lithographic apparatus and thermal optical manipulator control method |
| JP2012527099A (en) * | 2009-05-16 | 2012-11-01 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Projection exposure apparatus for semiconductor lithography comprising an optical correction structure |
| US9366977B2 (en) | 2009-05-16 | 2016-06-14 | Carl Zeiss Smt Gmbh | Semiconductor microlithography projection exposure apparatus |
| JP2013502063A (en) * | 2009-08-11 | 2013-01-17 | ズス・マイクロテック・リソグラフィ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | Method and apparatus for maintaining a constant mask size |
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| JP3238737B2 (en) | 2001-12-17 |
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