JPH03211279A - Chemical vapor growth device - Google Patents
Chemical vapor growth deviceInfo
- Publication number
- JPH03211279A JPH03211279A JP565290A JP565290A JPH03211279A JP H03211279 A JPH03211279 A JP H03211279A JP 565290 A JP565290 A JP 565290A JP 565290 A JP565290 A JP 565290A JP H03211279 A JPH03211279 A JP H03211279A
- Authority
- JP
- Japan
- Prior art keywords
- foreign matter
- exhaust duct
- chemical vapor
- thin film
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title abstract description 4
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000006185 dispersion Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 28
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 239000012495 reaction gas Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 13
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000000376 reactant Substances 0.000 abstract description 3
- 238000007664 blowing Methods 0.000 abstract description 2
- 239000012808 vapor phase Substances 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は常圧（大気圧）下でウェハに対して薄膜を形成
する場合に使用する化学気相成長装置に関し、特に薄膜
の形成時に発生する異物の低減化を図るものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a chemical vapor deposition apparatus used to form a thin film on a wafer under normal pressure (atmospheric pressure), and in particular, to This aims to reduce the amount of foreign matter that is produced.
第３図Ａは従来の化学気相成長装置を示す側面断面図、
第３図Ｂはその正面断面図である。FIG. 3A is a side sectional view showing a conventional chemical vapor deposition apparatus;
FIG. 3B is a front sectional view thereof.
図において、１はウェハ３を載せるトレイ、２は上記ウ
ェハ３を下方から加熱する加熱ヒータ、４は上記ウェハ
３に反応ガスを吹きつけるためのガスディスバージョン
ヘッド、５は該ガスディスバージョンヘッド４に反応ガ
スを供給するための反応ガス導入パイプ、６は反応後の
ガスを装置外へ排気するための排気ダクトである。In the figure, 1 is a tray on which a wafer 3 is placed, 2 is a heater that heats the wafer 3 from below, 4 is a gas dispersion head for blowing a reaction gas onto the wafer 3, and 5 is the gas dispersion head 4. 6 is an exhaust duct for exhausting the gas after the reaction to the outside of the apparatus.
次に動作を眉間絶縁膜の一種であるＳｉＯ□膜を形成す
る場合について説明する。Next, the operation will be described in the case of forming a SiO□ film, which is a type of glabellar insulating film.
トレイ１上に載置したウェハ３をヒータ２によって所望
の温度３５０〜４５０℃にまで加熱する。The wafer 3 placed on the tray 1 is heated by the heater 2 to a desired temperature of 350 to 450°C.
この状態で反応ガスの一種であるモノシラン（ＳｉＨ４
）及び酸化剤である酸素（０２）を反応ガス導入パイプ
５より導入し、ガスディスバージョンヘッド４より吹出
させる。ガスディスバージョンヘッド４より吹出したガ
スはウェハ３上で酸化膜（ＳｉＯ２）を形成する。この
ときの反応は次の反応式で与えられる。In this state, monosilane (SiH4
) and oxygen (02), which is an oxidizing agent, are introduced from the reaction gas introduction pipe 5 and blown out from the gas distribution head 4. The gas blown out from the gas distribution head 4 forms an oxide film (SiO2) on the wafer 3. The reaction at this time is given by the following reaction formula.
５ｉＨａ”２０ｔ → Ｓ ｓ Ｏｘ ＋ ２
Ｈ２０そして、反応後のガス及び未反応のガスは排気
ダクト６を通過して装置外へ排出される。5iHa”20t → S s Ox + 2
H20 Then, the gas after the reaction and the unreacted gas pass through the exhaust duct 6 and are exhausted to the outside of the apparatus.
従来の化学気相成長装置は以上のように構成されており
、反応後のガス及び未反応のガスが排気ダクト６を通過
して装置外へ排出される際、ウェハ３上で反応堆積せず
に気相中で成長した異物が排気ダクトの内壁に付着する
。このため、処理を行うにつれて内壁に付着する異物量
が増加し、排気の差圧が変動し、膜質の制御が困難にな
るという問題点があった。The conventional chemical vapor deposition apparatus is configured as described above, and when the reacted gas and unreacted gas pass through the exhaust duct 6 and are exhausted to the outside of the apparatus, they are not reacted and deposited on the wafer 3. Foreign matter that grows in the gas phase adheres to the inner wall of the exhaust duct. Therefore, as the treatment is carried out, the amount of foreign matter adhering to the inner wall increases, the differential pressure of the exhaust fluctuates, and it becomes difficult to control the film quality.
この発明は上記のような問題点を解消するためになされ
たもので、異物を低減し膜質の安定性を図ることのでき
る化学気相成長装置を得ることを目的とする。This invention was made to solve the above-mentioned problems, and an object of the present invention is to provide a chemical vapor deposition apparatus that can reduce foreign substances and improve film quality stability.
この発明に係る化学気相成長装置は、排気ダクトの周囲
またはガスディスバージョンヘッドに異物発生を抑制す
る加熱ヒータを設けたものである。The chemical vapor deposition apparatus according to the present invention is provided with a heater for suppressing the generation of foreign matter around the exhaust duct or the gas distribution head.
この発明においては、排気ダクトの周囲に加熱し−タを
設けたから、排気ダクト内に異物が発生することがない
。あるいはガスディスバージョンヘッド下部に加熱ヒー
タを設けたから、ガスディスパーションヘッド下部周囲
に付着する異物の発生を抑制することができ、ウェハ上
への異物の落下を防ぐことができる。In this invention, since the heating heater is provided around the exhaust duct, no foreign matter is generated inside the exhaust duct. Alternatively, since a heater is provided at the bottom of the gas dispersion head, it is possible to suppress the generation of foreign matter adhering to the vicinity of the bottom of the gas dispersion head, and it is possible to prevent foreign matter from falling onto the wafer.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図Ａは本発明の一実施例による化学気相成長装置を
示す側面断面図、第１図Ｂはその正面断面図である。図
において第３図と同一符号は同一部分を示し、７は排気
ダクト６の周囲に設けた加熱機構である加熱ヒータ、８
は異物トラップである。FIG. 1A is a side sectional view showing a chemical vapor deposition apparatus according to an embodiment of the present invention, and FIG. 1B is a front sectional view thereof. In the figure, the same symbols as in FIG. 3 indicate the same parts, 7 is a heating mechanism provided around the exhaust duct 6, and 8 is a heater.
is a foreign object trap.
次に動作について説明する。Next, the operation will be explained.
ウェハ３上で反応した後のガス及び未反応のガスは排気
ダクト６中を流れる。ここで、反応時の温度と成膜状態
との関係を第２図を用いて説明する。The gas that has reacted on the wafer 3 and the unreacted gas flow through the exhaust duct 6. Here, the relationship between the temperature during reaction and the state of film formation will be explained using FIG. 2.
図において横軸は温度であり、通常の膜形成は３５０〜
４５０℃の範囲で行われる。温度が低い場合、即ち、常
温から２００℃の範囲においては膜は形成されず、粒状
の異物（ＳｉＯｚの粉）が生成する。ところが２００〜
３００℃の温度範囲では粒状異物も発生せずまた、膜形
成も行われないことが実験的に判明している。In the figure, the horizontal axis is temperature, and normal film formation is 350~
The temperature range is 450°C. When the temperature is low, that is, in the range from room temperature to 200° C., no film is formed and granular foreign matter (SiOz powder) is generated. However, from 200
It has been experimentally found that in a temperature range of 300° C., no particulate foreign matter is generated and no film formation occurs.
そこで排気ダクト６の周囲に加熱機構７を設けるととも
に装置外に異物トラップ８を設け、温度を２００〜３０
０℃に上げることによって排気ダクト６内での粒状異物
の発生を抑制することができるとともに、異物を上記異
物トラップ８に堆積することで、排気ダクト６内の異物
によるつまりを防ぐことができる。Therefore, a heating mechanism 7 is provided around the exhaust duct 6, and a foreign matter trap 8 is provided outside the device to keep the temperature at 200-300℃.
By raising the temperature to 0° C., it is possible to suppress the generation of particulate foreign matter in the exhaust duct 6, and by accumulating the foreign matter in the foreign matter trap 8, it is possible to prevent the exhaust duct 6 from being clogged by foreign matter.
このように本実施例では、排気ダクト６の周囲に異物発
生を抑制する加熱ヒータ７を設けるとともに装置外に異
物トラップ８を設け、排気ダクト６内の温度を２００〜
３００℃に上げることによって排気ダクト６内での粒状
異物の発生を抑制し、異物を異物トラップ８に堆積する
ようにしたので、排気ダクト６内の異物によるつまりを
防ぐことができ、膜質の安定化を図ることができる。As described above, in this embodiment, a heater 7 for suppressing the generation of foreign matter is provided around the exhaust duct 6, and a foreign matter trap 8 is provided outside the device to keep the temperature inside the exhaust duct 6 at 200-200°C.
By raising the temperature to 300°C, the generation of particulate foreign matter in the exhaust duct 6 is suppressed, and the foreign matter is deposited in the foreign matter trap 8, which prevents clogging of the exhaust duct 6 with foreign matter and stabilizes the film quality. It is possible to aim for
次に本発明の他の実施例による化学気相発生装置につい
て説明する。Next, a chemical vapor phase generator according to another embodiment of the present invention will be described.
上記実施例では、排気ダクト内における異物の発生、付
着に対して加熱ヒータ７を排気ダクト６の周囲に配置し
たが、異物の発生は、これとは別にガスディスバージョ
ンへラド４の下部でも生じる。In the above embodiment, the heater 7 is arranged around the exhaust duct 6 to prevent the generation and adhesion of foreign matter in the exhaust duct, but the generation of foreign matter also occurs at the lower part of the gas distribution radiator 4. .
詳しく説明すると、反応の際、ガスディスバージョンヘ
ッド４は水冷されているため、該へラド４上部付近でも
温度は〜８０℃程度である。このため、ヘッド４周辺に
気相成長した異物が付きやすく、−度ヘッド４周辺に付
きだすと、それらを核としてさらに異物の堆積が促進す
る。このようにしてヘッド４の周辺、特にヘッド４上部
に成長した異物は薄膜形成時にウェハ３上に落下し、デ
バイスの信頼性を下げることがある。To explain in detail, since the gas distribution head 4 is water-cooled during the reaction, the temperature near the top of the helad 4 is about ~80°C. For this reason, vapor-grown foreign matter tends to adhere to the periphery of the head 4, and when they begin to adhere to the periphery of the head 4, further accumulation of foreign matter is promoted using these as nuclei. Foreign matter that has grown around the head 4 in this way, particularly on the top of the head 4, may fall onto the wafer 3 during thin film formation, reducing the reliability of the device.
そこで第４図に示すように、ガスディスバージョンヘッ
ド４の下部に加熱ヒータ７を設け、加熱することで気相
中に異物が発生することを抑制することができる。Therefore, as shown in FIG. 4, a heater 7 is provided at the lower part of the gas distribution head 4, and by heating it, it is possible to suppress the generation of foreign matter in the gas phase.
なお、上記両方法を組み合わせて、つまり排気ダクト６
及びガスディスバージョンヘッド４の下部ともに加熱ヒ
ータ７を設けてもよく、この場合、さらに大きな効果を
図ることができる。In addition, by combining both of the above methods, that is, the exhaust duct 6
A heater 7 may be provided at both the lower part of the gas distribution head 4, and in this case, an even greater effect can be achieved.
以上のように、この発明に係る化学気相成長装置よれば
、排気ダクト内に加熱機構を設け、所定の温度で加熱す
るようにしたので、排気時に異物が発生、付着せず、膜
質の安定化を向上することができる。またガスディスバ
ージョンヘッドの下部に加熱機構を設け、所定の温度で
加熱するようにしたので、成膜時の異物の発生及びヘッ
ドへの付着を防ぎ、ウェハ上に異物が落下することなく
信頼性の高い薄膜を得られる効果がある。As described above, according to the chemical vapor deposition apparatus according to the present invention, a heating mechanism is provided in the exhaust duct to heat at a predetermined temperature, so that foreign matter is not generated or attached during exhaust, and the film quality is stabilized. It is possible to improve the In addition, a heating mechanism is installed at the bottom of the gas distribution head to heat the gas at a predetermined temperature, which prevents foreign matter from forming and adhering to the head during film formation, and prevents foreign matter from falling onto the wafer, increasing reliability. This has the effect of obtaining a thin film with high .
第１図はこの発明の一実施例による化学気相成長装置を
示す図であり、第１図Ａはその側面断面図、第１図Ｂは
その正面断面図、第２図は常圧式の化学気相成長装置を
用いて薄膜を形成するときの温度と薄膜の関係を示す図
、第３図は従来の化学気相成長装置を示す図であり、第
３図Ａは側面断面図、第３図Ｂは正面断面図である。第
４図は本発明の他の実施例におけるガスディスバージョ
ンヘッドと、それに取り付けられた加熱ヒータを示す図
であり、第４図Ａは側面断面図、第４図Ｂは平面図であ
る。
１・・・トレイ、２・・・ヒータ、３・・・ウェハ、４
・・・ガスディスバージョンヘッド、５・・・反応ガス
導入バイブ、６・・・排気ダクト、７・・・加熱機構、
８・・・異物トラップ。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a diagram showing a chemical vapor deposition apparatus according to an embodiment of the present invention, FIG. 1A is a side sectional view thereof, FIG. 1B is a front sectional view thereof, and FIG. A diagram showing the relationship between temperature and thin film when forming a thin film using a vapor phase growth apparatus, FIG. 3 is a diagram showing a conventional chemical vapor deposition apparatus, FIG. 3A is a side sectional view, and FIG. Figure B is a front sectional view. FIG. 4 is a diagram showing a gas distribution head and a heater attached thereto in another embodiment of the present invention, with FIG. 4A being a side sectional view and FIG. 4B being a plan view. 1...Tray, 2...Heater, 3...Wafer, 4
... Gas distribution head, 5... Reactant gas introduction vibrator, 6... Exhaust duct, 7... Heating mechanism,
8...Foreign object trap. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (2)
ィスパーションヘッドより吹き付けることによって薄膜
を形成する化学気相成長装置において、 排気ダクトにヒータ機構を設けたことを特徴とする化学
気相成長装置。(1) A chemical vapor deposition apparatus that forms a thin film by spraying a thin film forming reaction gas onto a heated wafer from a gas dispersion head, characterized in that a heater mechanism is provided in the exhaust duct. Device.
ッドにヒータ機構を設けたことを特徴とする特許請求の
範囲第１項記載の化学気相成長装置。(2) The chemical vapor deposition apparatus according to claim 1, characterized in that the gas distribution head is provided with a heater mechanism in place of the exhaust duct.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP565290A JPH03211279A (en) | 1990-01-11 | 1990-01-11 | Chemical vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP565290A JPH03211279A (en) | 1990-01-11 | 1990-01-11 | Chemical vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03211279A true JPH03211279A (en) | 1991-09-17 |
Family
ID=11617062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP565290A Pending JPH03211279A (en) | 1990-01-11 | 1990-01-11 | Chemical vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03211279A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071797A (en) * | 1995-10-12 | 2000-06-06 | Nec Corporation | Method for forming amorphous carbon thin film by plasma chemical vapor deposition |
| US6364954B2 (en) | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
-
1990
- 1990-01-11 JP JP565290A patent/JPH03211279A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071797A (en) * | 1995-10-12 | 2000-06-06 | Nec Corporation | Method for forming amorphous carbon thin film by plasma chemical vapor deposition |
| US6364954B2 (en) | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
| WO2000036179A3 (en) * | 1998-12-14 | 2002-10-17 | Applied Materials Inc | High temperature chemical vapor deposition chamber |
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