JPH03167913A - Seal base and production of electronic component - Google Patents

Seal base and production of electronic component

Info

Publication number
JPH03167913A
JPH03167913A JP1308358A JP30835889A JPH03167913A JP H03167913 A JPH03167913 A JP H03167913A JP 1308358 A JP1308358 A JP 1308358A JP 30835889 A JP30835889 A JP 30835889A JP H03167913 A JPH03167913 A JP H03167913A
Authority
JP
Japan
Prior art keywords
substrate
sealing substrate
adhesives
cavity
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1308358A
Other languages
Japanese (ja)
Inventor
Yasuhiro Tanaka
田中 康廣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP1308358A priority Critical patent/JPH03167913A/en
Publication of JPH03167913A publication Critical patent/JPH03167913A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Abstract

PURPOSE:To reduce troublesome adhesives coating process and to improve the productivity by coating an adhesives whose film thickness is below nearly 10% of the maximum value of the required gap between a base provided with a function element and a seal base to nearly the entire face of the seal base toward the cavity forming side. CONSTITUTION:An adhesives 5 is coated to the entire face of vibration space forming recessed parts 2a, 3a of seal bases 2, 3 with a thickness of nearly 10% or below of the maximum value of the gap required between a piezoelectric base 4 and the seal bases 2, 3. Thus, the film thickness of the adhesives 5 is sufficiently thin with respect to the depth of the vibration space forming recessed parts 2a, 3a and even when the adhesives 5 is more or less moved due to its fluidity, the gap is not buried. As the coating method of the adhesives 5, the spray method, the dipping method or the spinner method or the like is used. The bases 2, 3, 4 thus obtained are adhered by the adhesives 5 and fixed to obtain the piezoelectric resonator component 1 with the vibration space.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、空洞構造を有するチップ型電子部品、例えば
、圧電共振部品等に使用される封止基板に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a sealing substrate used for chip-type electronic components having a cavity structure, such as piezoelectric resonant components.

従来の技術と課題 空洞構造を有するチップ型電子部品、例えば、第6図に
示す圧電共振部品35の圧電体基板36と封止基板37
. 38との貼り合わせには、接着剤39が使用される
。一般に接着剤39の塗布は封止基板37,38に施さ
れ、その塗布方法としてはスクリーン印刷法が採用され
ていた。このスクリーン印刷法はレベリング性が優れて
いるとは言い難く、シかも振動空間形成用凹部37a,
 38aには厚み精度の良い接着剤膜が形成できないと
いう欠点を有するため、振動空間形成用凹部37a. 
38aは初めから接着剤を塗布しないようにスクリーン
マスクの該当箇所を目止めしていた。そのため、封止基
板37. 38の振動空間形成用凹部37a, 38a
の形状が変化すると、その都度スクリーンマスクを交換
しなければならず、また、被印刷対象物である封止基板
37. 38とスクリーンマスクとの位置合わせ作業に
も長時間を要し、作業性が低いものであった。
Prior Art and Problems Chip-type electronic components having a cavity structure, for example, a piezoelectric substrate 36 and a sealing substrate 37 of a piezoelectric resonant component 35 shown in FIG.
.. Adhesive 39 is used for bonding with 38. Generally, the adhesive 39 is applied to the sealing substrates 37 and 38, and a screen printing method has been adopted as the application method. This screen printing method cannot be said to have excellent leveling properties, and there may be problems with the vibration space forming recesses 37a,
38a has the disadvantage that an adhesive film with good thickness accuracy cannot be formed, so the vibration space forming recess 37a.
38a had sealed the corresponding part of the screen mask from the beginning so as not to apply the adhesive. Therefore, the sealing substrate 37. 38 vibration space forming recesses 37a, 38a
When the shape of the sealing substrate 37. changes, the screen mask must be replaced each time. 38 and the screen mask also required a long time, resulting in low workability.

そこで、本発明の課題は、接着剤塗布の作業性が高い封
止基板及び電子部品の製造方法を提供することにある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a sealing substrate and a method for manufacturing an electronic component that have high adhesive application workability.

課題を解決するための手段 以上の課題を解決するため、本発明に係る封止基板は、
空洞部にて、機能素子を備えた基板と封止基板との間に
必要なギャップ寸法の最大値の約10%以下の膜厚を有
する接着剤膜が空洞形成側の略全面に形成されているこ
とを特徴とする.また、本発明に係る電子部品の製造方
法は、封止基板の空洞形成側の面の空洞壁となるべき部
分に離型剤の膜を形成し、さらに空洞形成側の全面に接
着剤の膜を形成することを特徴とする.企一浬 封止基板に塗布される接着剤の膜厚を、機能素子を備え
た基板と封止基板との間に必要なギャップ寸法の最大値
の約10%以下としたため、封止基板の空洞形成用凹部
や空洞壁となるべき部分に接着剤が塗布されていてもそ
れらの形状変化は僅かで、空洞部の寸法変化も実用上問
題とならない。
In order to solve the problems beyond the means for solving the problems, the sealing substrate according to the present invention has the following features:
In the cavity, an adhesive film having a thickness of approximately 10% or less of the maximum gap dimension required between the substrate with the functional element and the sealing substrate is formed on substantially the entire surface on the cavity formation side. It is characterized by the presence of Further, in the method for manufacturing an electronic component according to the present invention, a film of a release agent is formed on a portion of the surface of the sealing substrate on the cavity formation side that is to become a cavity wall, and a film of adhesive is further formed on the entire surface of the cavity formation side. It is characterized by the formation of The thickness of the adhesive applied to the encapsulation substrate was set to approximately 10% or less of the maximum gap dimension required between the substrate with functional elements and the encapsulation substrate. Even if the adhesive is applied to the cavity-forming recesses and the portions that are to become the cavity walls, the changes in their shape are slight, and the changes in the dimensions of the cavity do not pose a practical problem.

しかも、多少接着剤が流動しても空洞形成用凹部を埋め
てしまうことにならない。従って、接着剤を封止基板の
空洞形成側の略全面に塗布しても何ら問題は生じない.
膜厚が、機能素子を備えた基板と封止基板との間に必要
なギャップ寸法の最大値の約10%以下の接着剤が空洞
形成側の略全面に塗布された封止基板は、機能素子が備
えられた基板と貼り合わされて空洞部を形成す゛る.一
方、離型剤の膜が封止基板の空洞形成側の面の空洞壁と
なるべき部分に予め形成されているので、接着剤を空洞
形成側の全面に任意の膜厚で塗布しても、接着剤は離型
剤が形成されている部分において、はじいて塗布されず
、機能素子を備えた基板と貼り合わされる部分にのみ接
着剤が形成されることになる。
Moreover, even if the adhesive flows to some extent, it will not fill the cavity forming recess. Therefore, no problem occurs even if the adhesive is applied to almost the entire surface of the cavity formation side of the sealing substrate.
A sealing substrate in which an adhesive having a film thickness of about 10% or less of the maximum gap dimension required between the substrate with a functional element and the sealing substrate is coated on almost the entire surface of the cavity forming side has no function. It is bonded to a substrate equipped with an element to form a cavity. On the other hand, since the release agent film is pre-formed on the cavity wall of the cavity forming side of the sealing substrate, the adhesive can be applied to the entire surface of the cavity forming side with any thickness. In this case, the adhesive is not repelled and applied to the part where the mold release agent is formed, and the adhesive is formed only in the part to be bonded to the substrate having the functional element.

夾亀廼 以下、本発明に係る封止基板及び電子部品の製造方法の
実施例を説明する. [第1実施例、第1図] 第1図は本発明に係る封止基板を2枚使用した圧電共振
部品1を示す。封止基板2.3は、高強度、耐熱、耐溶
剤性等を有するセラミックス基板、ガラス基板、耐熱樹
脂基板等の絶縁基板が使用される。封止基板2の下面に
は振動空間形成用凹部2aが形成されている。封止基板
3の上面には振動空間形成用凹部3aが形成されている
Hereinafter, embodiments of the method for manufacturing a sealing substrate and electronic components according to the present invention will be described. [First Example, FIG. 1] FIG. 1 shows a piezoelectric resonant component 1 using two sealing substrates according to the present invention. As the sealing substrate 2.3, an insulating substrate such as a ceramic substrate, a glass substrate, a heat-resistant resin substrate, etc. having high strength, heat resistance, solvent resistance, etc. is used. A vibration space forming recess 2 a is formed on the lower surface of the sealing substrate 2 . A vibration space forming recess 3 a is formed on the upper surface of the sealing substrate 3 .

圧電体基板4はその表面に振動電極が形成されている(
図示せず)。なお、これら基板2,3,4は実際の量産
工程では広面積のものを用い、接着後に所定寸法にカッ
トする。
The piezoelectric substrate 4 has a vibrating electrode formed on its surface (
(not shown). In the actual mass production process, these substrates 2, 3, and 4 have a wide area and are cut into predetermined dimensions after being bonded.

さて、封止基板2.3はその振動空間形成用凹部2a.
 3aが設けられている側の全面に接着剤5が、圧電体
基板4と封止基板2.3との間に必要なギャップ寸法の
最大値の約10%以下の厚みで塗布されている.本実施
例の場合、封止基板2,3に接着剤5が約10μm以下
の厚みで塗布されている.接着剤5の膜厚が、圧電体基
板4と封止基板2,3との間に必要なギャップ寸法の最
大値の約10%以下であるので、振動空間形成用凹部2
a, 3aの深さに対して充分薄く、しかも多少接着剤
5が流動しても凹部2a.3aを埋めてしまうことにな
らない。
Now, the sealing substrate 2.3 has its vibration space forming recess 2a.
An adhesive 5 is applied to the entire surface of the side where the piezoelectric substrate 4 and the sealing substrate 2.3 are provided at a thickness of about 10% or less of the maximum gap dimension required between the piezoelectric substrate 4 and the sealing substrate 2.3. In the case of this embodiment, the adhesive 5 is applied to the sealing substrates 2 and 3 to a thickness of about 10 μm or less. Since the film thickness of the adhesive 5 is approximately 10% or less of the maximum value of the gap dimension required between the piezoelectric substrate 4 and the sealing substrates 2 and 3, the vibration space forming recess 2
It is sufficiently thin relative to the depth of the recesses 2a and 3a, and even if the adhesive 5 flows to some extent, the recesses 2a. This will not end up filling in 3a.

接着剤5の塗布方法としては、スプレー法、ディッピン
グ法、スピンナー法等がある. こうして得られた基板2,3.4は接着剤5によって貼
り合わされて固着され、振動空間を有する圧電共振部品
1となる。
Methods for applying the adhesive 5 include a spray method, a dipping method, a spinner method, and the like. The substrates 2, 3.4 thus obtained are bonded and fixed together with an adhesive 5, forming a piezoelectric resonant component 1 having a vibration space.

[第2実施例、第2図及び第3図] 第2図は本発明に係る封止基板を1゛枚使用した圧電共
振部品8を示す.封止基板9は平板状の絶縁基板が使用
され、その下面全面に膜厚が、圧電体基板11と封止基
板9との間に必要なギャップ寸法の最大値の約10%以
下の接着剤12が塗布され、圧電体基板11を収納した
絶縁性容器10の開口端に貼り合わされて固着され、振
動空間を有する圧電共振部品8となる. 第3図は、前記封止基板9と同じ仕様の封止基板を2枚
使用した圧電共振部品l5を示す。封止基板16. 1
7は平板状の絶縁基板で、それぞれその下面あるいは上
面の全面に膜厚が、圧電体基板18と封止基板16. 
17との間に必要なギャップ寸法の最大値の約10%以
下の接着剤20.20が塗布されている。この封止基板
16.17は、スベーサ19, 19を介して圧電体基
板18と貼り合わされて固着され、振動空間を有する圧
電共振部品15となる。
[Second Embodiment, Figures 2 and 3] Figure 2 shows a piezoelectric resonant component 8 using one sealing substrate according to the present invention. A flat insulating substrate is used as the sealing substrate 9, and an adhesive whose film thickness is approximately 10% or less of the maximum gap dimension required between the piezoelectric substrate 11 and the sealing substrate 9 is applied to the entire bottom surface of the substrate. 12 is applied and bonded and fixed to the open end of the insulating container 10 containing the piezoelectric substrate 11, forming a piezoelectric resonant component 8 having a vibration space. FIG. 3 shows a piezoelectric resonant component 15 using two sealing substrates having the same specifications as the sealing substrate 9. Sealing substrate 16. 1
7 is a flat insulating substrate, and a piezoelectric substrate 18 and a sealing substrate 16 .
The adhesive 20.20 is applied in an amount less than about 10% of the maximum value of the required gap size between the adhesive 20.20 and 17. The sealing substrates 16 and 17 are bonded and fixed to the piezoelectric substrate 18 via the spacers 19, 19, thereby forming a piezoelectric resonant component 15 having a vibration space.

[第3実施例、第4図コ 第4図は離型剤が形成された封止基板を1枚使用した圧
電共振部品25を示す。封止基板26は平板状の絶縁基
板が使用される。封止基板26の下面の空洞壁となるべ
き部分に離型剤29が塗布されている。離型剤29の塗
布方法としては点滴法等の簡単な方法が採用される。こ
の上に接着剤30を任意の厚みで塗布するが、離型剤2
9が形成されている部分は、はじいて接着剤が塗布され
ず、圧電体基板28を収納した絶縁性容器27と貼り合
わされる部分のみに接着剤30が形成される。
[Third Embodiment, Figure 4] Figure 4 shows a piezoelectric resonant component 25 using one sealing substrate on which a mold release agent is formed. As the sealing substrate 26, a flat insulating substrate is used. A mold release agent 29 is applied to a portion of the lower surface of the sealing substrate 26 that is to become a cavity wall. As a method for applying the mold release agent 29, a simple method such as a drip method is adopted. Adhesive 30 is applied on top of this to an arbitrary thickness, but release agent 2
The portion where 9 is formed is repelled and no adhesive is applied, and the adhesive 30 is formed only on the portion to be bonded to the insulating container 27 containing the piezoelectric substrate 28.

[第4実施例、第5図] 第5図は空洞形成用凹部31aを有する封止基板31の
上に離型剤が形成されている例を示す。空洞形成用凹部
31aの底に離型剤32が形成されていて、この部分を
残して接着剤33が任意の厚みで塗布されている。
[Fourth Embodiment, FIG. 5] FIG. 5 shows an example in which a mold release agent is formed on a sealing substrate 31 having a cavity forming recess 31a. A mold release agent 32 is formed at the bottom of the cavity forming recess 31a, and an adhesive 33 is applied to an arbitrary thickness except for this part.

[他の実施例] なお、本発明に係る封止基板及び電子部品の製造方法は
、前記各実施例に限定するものではなく、その要旨の範
囲内で種々に変形することができる。
[Other Examples] Note that the method for manufacturing a sealing substrate and an electronic component according to the present invention is not limited to the above-mentioned examples, and can be variously modified within the scope of the gist.

前記実施例では圧電共振部品について説明したが、本発
明はこれに限定されるものではなく、IC部品、チップ
トランス等の空洞構造を有するチップ型電子部品に適用
しても同様の効果が得られる。
In the above embodiment, a piezoelectric resonant component was described, but the present invention is not limited thereto, and similar effects can be obtained even when applied to chip-type electronic components having a cavity structure such as IC components and chip transformers. .

匙豊凶羞玉 本発明は、封止基板の空洞形成側の略全面に膜厚が機能
素子を備えた基板と封止基板との間に必要なギャップ寸
法の最大値の約10%以下の接着剤を塗布したので、ス
クリーンマスクを必要とせず、そのため煩雑な接着剤塗
布工程から解放され、塗布作業の簡単なスプレー法やデ
イッピング法、スピンナー法が採用でき、生産性の高い
封止基板が得られる. また、封止基板の空洞形成側の面の空洞壁となるべき部
分に離型剤の膜を形成したので、その後に空洞形成側の
全面に接着剤を任意の厚みで塗布しても、空洞壁となる
べき部分に接着剤が塗布されることはなく、簡単な塗布
作業で必要箇所のみに接着剤の膜を形成でき、かつ接着
剤の膜厚の制限も緩やかとなる。
The present invention provides adhesion with a film thickness that is approximately 10% or less of the maximum gap dimension required between the substrate with a functional element and the sealing substrate on substantially the entire surface of the cavity formation side of the sealing substrate. Since the adhesive is applied, there is no need for a screen mask, which frees the user from the complicated adhesive application process. Easy application methods such as spraying, dipping, and spinner methods can be used, resulting in highly productive encapsulation substrates. It will be done. In addition, since a release agent film was formed on the part of the sealing substrate that should become the cavity wall on the cavity formation side, even if adhesive was subsequently applied to the entire surface of the cavity formation side to any desired thickness, the cavity would still remain. Adhesive is not applied to the part that should become the wall, and the adhesive film can be formed only in the necessary areas with a simple application process, and the restrictions on the adhesive film thickness are relaxed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の第1実施例である封止基板を使用した
圧電共振部品の垂直断面図である。第2図及び第3図は
本発明の第2実施例である封止基板を使用した圧電共振
部品の垂直断面図である。 第4図は本発明の第3実施例である封止基板を使用した
圧電共振部品の垂直断面図である。第5図は本発明の第
4実施例である封止基板の垂直断面図である。第6図は
従来の封止基板を使用した圧電共振部品の垂直断面図で
ある。 2,3・・・封止基板、5・・・接着剤、9・・・封止
基板、12・・・接着剤、16. 17・・・封止基板
、20・・・接着剤、26・・・封止基板、29・・・
離型剤、30・・・接着剤、31・・・封止基板、32
・・・離型剤、33・・・接着剤。 第 図 籐5図 第2図 2日 第6図
FIG. 1 is a vertical sectional view of a piezoelectric resonant component using a sealing substrate according to a first embodiment of the present invention. 2 and 3 are vertical sectional views of a piezoelectric resonant component using a sealing substrate according to a second embodiment of the present invention. FIG. 4 is a vertical sectional view of a piezoelectric resonant component using a sealing substrate according to a third embodiment of the present invention. FIG. 5 is a vertical sectional view of a sealing substrate according to a fourth embodiment of the present invention. FIG. 6 is a vertical cross-sectional view of a piezoelectric resonant component using a conventional sealing substrate. 2, 3... Sealing substrate, 5... Adhesive, 9... Sealing substrate, 12... Adhesive, 16. 17... Sealing substrate, 20... Adhesive, 26... Sealing substrate, 29...
Mold release agent, 30... Adhesive, 31... Sealing substrate, 32
...Mold release agent, 33...Adhesive. Figure Rattan Figure 5 Figure 2 Day 2 Figure 6

Claims (2)

【特許請求の範囲】[Claims] 1.機能素子を備えた基板と貼り合わせて空洞部を形成
する封止基板において、 前記空洞部にて、機能素子を備えた基板と封止基板との
間に必要なギャップ寸法の最大値の約10%以下の膜厚
を有する接着剤膜が空洞形成側の略全面に形成されてい
ることを特徴とする封止基板。
1. In a sealing substrate that is bonded to a substrate provided with a functional element to form a cavity, the cavity has a gap size of about 10% of the maximum gap dimension required between the substrate provided with the functional element and the sealing substrate. 1. A sealing substrate characterized in that an adhesive film having a film thickness of % or less is formed on substantially the entire surface of the cavity forming side.
2.機能素子を備えた基板と封止基板とを、空洞部を設
けた状態で貼り合わせてなる電子部品の製造方法におい
て、 前記封止基板の空洞形成側の面の空洞壁となるべき部分
に離型剤の膜を形成する工程と、 離型剤の膜が形成された封止基板の空洞形成側の全面に
接着剤の膜を形成する工程と、 を備えたことを特徴とする電子部品の製造方法。
2. In a method for manufacturing an electronic component in which a substrate provided with a functional element and a sealing substrate are bonded together with a cavity provided therein, a part of the surface of the sealing substrate on the side where the cavity is formed that is to become a cavity wall is separated. An electronic component comprising the steps of: forming a molding agent film; and forming an adhesive film on the entire surface of the cavity forming side of the sealing substrate on which the mold release agent film is formed. Production method.
JP1308358A 1989-11-27 1989-11-27 Seal base and production of electronic component Pending JPH03167913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1308358A JPH03167913A (en) 1989-11-27 1989-11-27 Seal base and production of electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1308358A JPH03167913A (en) 1989-11-27 1989-11-27 Seal base and production of electronic component

Publications (1)

Publication Number Publication Date
JPH03167913A true JPH03167913A (en) 1991-07-19

Family

ID=17980104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1308358A Pending JPH03167913A (en) 1989-11-27 1989-11-27 Seal base and production of electronic component

Country Status (1)

Country Link
JP (1) JPH03167913A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801069A (en) * 1995-09-11 1998-09-01 Mitsubishi Denki Kabushiki Kaisha Method of fabricating thin film piezoelectric device
US20170264263A1 (en) * 2016-03-10 2017-09-14 Semiconductor Manufacturing International (Shanghai) Corporation Thin-film bulk acoustic resonator, semiconductor apparatus comprising of such an acoustic resonator, and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801069A (en) * 1995-09-11 1998-09-01 Mitsubishi Denki Kabushiki Kaisha Method of fabricating thin film piezoelectric device
US20170264263A1 (en) * 2016-03-10 2017-09-14 Semiconductor Manufacturing International (Shanghai) Corporation Thin-film bulk acoustic resonator, semiconductor apparatus comprising of such an acoustic resonator, and manufacture thereof
US10686422B2 (en) * 2016-03-10 2020-06-16 Semiconductor Manufacturing International (Shanghai) Corporation Manufacturing of thin-film bulk acoustic resonator and semiconductor apparatus comprising the same
US11601106B2 (en) 2016-03-10 2023-03-07 Semiconductor Manufacturing International (Shanghai) Corporation Thin-film bulk acoustic resonator and semiconductor apparatus comprising the same

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