JPH03178151A - Resin package type semiconductor device and its manufacture - Google Patents
Resin package type semiconductor device and its manufactureInfo
- Publication number
- JPH03178151A JPH03178151A JP1317143A JP31714389A JPH03178151A JP H03178151 A JPH03178151 A JP H03178151A JP 1317143 A JP1317143 A JP 1317143A JP 31714389 A JP31714389 A JP 31714389A JP H03178151 A JPH03178151 A JP H03178151A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- semiconductor device
- resin body
- mounting recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 57
- 239000011347 resin Substances 0.000 title claims abstract description 57
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000007789 sealing Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000000465 moulding Methods 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000010897 surface acoustic wave method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、例えば表面弾性波素子や圧！振動子の振動電
子部品と半導体素子とを１つの樹脂パッケージに納めた
半導体装置とその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is applicable to, for example, surface acoustic wave devices and pressure sensitive devices. The present invention relates to a semiconductor device in which a vibrating electronic component of a vibrator and a semiconductor element are housed in one resin package, and a method for manufacturing the same.
（従来の技術）
表面弾性波素子や圧電振動子はその動作原理上の理由か
ら、素子の周囲は中空状態にしておく必要がある。 し
たがって、従来、これらを収納する外囲器は、第４図に
示すような金属製の気密封止型がほとんどである。(Prior Art) Surface acoustic wave elements and piezoelectric vibrators need to be hollow around the element due to their operating principles. Therefore, conventionally, most of the envelopes used to house these devices are of a metal hermetically sealed type as shown in FIG.
第４図において、１は電子部品２．２ａを搭載したヘッ
ダー、３はガラス４でヘッダー１に封着したリード、５
は電子部品２，２ａ、リード３の相互間を電気的に接続
する金属細線（ボンディングワイヤ）、６は外囲器内を
気密に封止するキャップである。In Fig. 4, 1 is a header mounted with an electronic component 2.2a, 3 is a lead sealed to the header 1 with glass 4, and 5 is a header mounted with an electronic component 2.2a.
6 is a thin metal wire (bonding wire) that electrically connects the electronic components 2, 2a and the leads 3, and 6 is a cap that hermetically seals the inside of the envelope.
ところで金属製の気密封止型外囲器は、通常ヘッダー１
、リード３、キャップ６等の部品を組み立てて製造する
ため、部品コスト、製造コストとも高価なものとなり、
また量産性の向上も難しい。By the way, the metal hermetically sealed envelope is usually header 1.
, the lead 3, the cap 6, etc. are assembled and manufactured, so both the parts cost and manufacturing cost are high.
It is also difficult to improve mass productivity.
このため従来技術より安価に製造でき、かつ同程度の特
性を示すものがあればそれに代替することが望ましいと
されてきた。 そして一般半導体装置の外囲器では現実
に、金属製気密封止型から樹脂封止型への切換えは多数
行われている。 しかしながら、よく知られているよう
に樹脂封止型外囲器では素子が封止樹脂と直接に接触す
るので、前述したように表面弾性波素子等の振動電子部
品を樹脂封止技術で封止することはできず、樹脂封止型
外囲器内の振動電子部品周囲に中空状態を形成するもの
は、従来実用化されていながった。For this reason, it has been considered desirable to replace it with something that can be manufactured at a lower cost than the conventional technology and exhibits similar characteristics. In actual cases, the envelopes of general semiconductor devices are often switched from metal hermetic sealing type to resin sealing type. However, as is well known, in a resin-sealed envelope, the element comes into direct contact with the sealing resin, so as mentioned above, vibrating electronic components such as surface acoustic wave elements are encapsulated using resin encapsulation technology. Therefore, a resin-sealed envelope that forms a hollow state around the vibrating electronic component has not been put to practical use in the past.
（発明が解決しようとする課題）
本発明の目的は、中空部分を有する新規な樹脂パッケー
ジに収納された振動電子部品を含む半導体装置を提供す
ることにあり、また別の本発明の目的は、振動電子部品
を含むと含まないとにかかわらず、中空部分を有する安
価で量産性の良い樹脂パッケージ型半導体装置の製造方
法を提供することにある。(Problems to be Solved by the Invention) An object of the present invention is to provide a semiconductor device including a vibrating electronic component housed in a novel resin package having a hollow portion, and another object of the present invention is to It is an object of the present invention to provide a method for manufacturing a resin package type semiconductor device having a hollow portion, which is inexpensive and easy to mass-produce, regardless of whether or not it contains a vibrating electronic component.
［発明の構ｔｃ］
（課題を解決するための手段）
まず半導体素子および表面弾性波素子等の搭載凹部を有
する樹脂体を成形するのであるが、その際インサートさ
れるリードフレームのボンディングエリア（樹脂体の搭
載凹部に露出する）にパリが発生しやすい、 このため
、本発明の製造方法は、まず、樹脂体のモールド金型の
一方の型のキャビティ内にはピン突部を設け、他方の型
における上記ピン突部に対向する部分にはフレーム押え
面を設け、前記ピン突部と前記フレーム押え面によって
ボンディングエリアに沿うリードフレームを隙間なく強
固にはさみ込んで樹脂体をモールド成形するとともに、
前記ピン突部による樹脂体の成形跡には樹脂を充填して
樹脂体を得る。[Structure of the Invention] (Means for Solving the Problems) First, a resin body having recesses for mounting semiconductor elements, surface acoustic wave elements, etc. is molded, and at that time, the bonding area (resin For this reason, in the manufacturing method of the present invention, first, a pin protrusion is provided in the cavity of one mold of the resin mold, and a pin protrusion is provided in the cavity of the other mold. A frame pressing surface is provided in a portion of the mold that faces the pin protrusion, and the lead frame along the bonding area is tightly sandwiched between the pin protrusion and the frame pressing surface without any gaps, and the resin body is molded.
A resin body is obtained by filling the resin body into the molding mark of the resin body by the pin protrusion.
次に、この樹脂体の搭載凹部にあるり、−ドフレームの
アイランドに半導体素子および表面弾性波素子等をマウ
ントし、素子相互間、また素子とリードフレームの間に
ワイヤボンディングを行った後、例えば搭載凹部にキャ
ップをしさらに樹脂リングするなど、シーリングを行っ
て、中空構造の樹脂パッケージ型半導体装置が得られる
。Next, semiconductor elements, surface acoustic wave elements, etc. are mounted in the mounting recesses of the resin body or on the islands of the lead frame, and wire bonding is performed between the elements and between the elements and the lead frame. For example, sealing is performed, such as by capping the mounting recess and then applying a resin ring, to obtain a resin packaged semiconductor device having a hollow structure.
また本発明の振動素子を含む半導体装置は、インサート
したリードフレームの素子搭載部が中央の搭載凹部に露
出している凹函形の樹脂体と、上記リードフレームの素
子搭載部に搭載されるとともに相互に電気的に接続され
る、少なくとも１つの半導体素子を含む複数個の電子部
品と、該電子部品の周囲を中空状態にして樹脂体の前記
搭載凹部をシーリングする樹脂封止体とを具備するもの
である。Further, the semiconductor device including the vibrating element of the present invention includes a concave box-shaped resin body in which the element mounting part of the inserted lead frame is exposed in the central mounting recess, and a semiconductor device that is mounted on the element mounting part of the lead frame. A plurality of electronic components including at least one semiconductor element are electrically connected to each other, and a resin sealing body forms a hollow state around the electronic components and seals the mounting recess of the resin body. It is something.
（実施例）
以下、図面を参照して本発明装置の製造方法を具体的に
説明する。(Example) Hereinafter, a method for manufacturing the device of the present invention will be specifically described with reference to the drawings.
第１図はＤＩＰバッゲージの第一実施例装置の断面図で
ある。 まずリードフレーム１１と樹脂を材料として搭
載凹部１２を有する樹脂体１３を成形する。 樹脂は熱
可塑性樹脂を使用したが、熱硬化性樹脂でも構わない、
この場合従来技術のモールド金型によると、樹脂の種
類によっては成形時にボンディングエリアｌｌａ付近に
薄パリが発生しボンディングできないという問題が生じ
得る。 これを機械的または化学的に除去することは可
能ではあるが、工程が増加し、リードフレーム表面が平
滑でなくなるため好ましくない。FIG. 1 is a sectional view of a first embodiment of a DIP baggage device. First, a resin body 13 having a mounting recess 12 is molded using the lead frame 11 and resin. Although thermoplastic resin was used as the resin, thermosetting resin may also be used.
In this case, according to the conventional molding die, depending on the type of resin, there may be a problem that thin flakes are generated near the bonding area lla during molding, and bonding cannot be performed. Although it is possible to remove this mechanically or chemically, it is not preferable because the number of steps increases and the lead frame surface becomes uneven.
そこで第２図に示すように金型の上型２１のキャビティ
２２内にピン２３を設置し、下型２４におけるピン２３
に対応するフレーム押え面２５との間にリードフレーム
１１を強くはさみ込むことによってパリの発生を防止す
る。Therefore, as shown in FIG. 2, a pin 23 is installed in the cavity 22 of the upper mold 21 of the mold, and
By tightly sandwiching the lead frame 11 between the lead frame 11 and the frame holding surface 25 corresponding to the lead frame 11, the occurrence of cracks is prevented.
このようにして成形した樹脂体１３に、第１図に示すよ
うに、複数個の電子部品２，２ａを同−面側に搭載し、
金属細線５で所要のボンディングをする。 次に仕切り
板１４を置き、樹脂１５で封止する。 またピン２３の
成形跡に樹脂１３ａを充填する。As shown in FIG. 1, a plurality of electronic components 2, 2a are mounted on the same side of the resin body 13 molded in this manner, and
Necessary bonding is performed using a thin metal wire 5. Next, a partition plate 14 is placed and sealed with resin 15. Further, the molded portion of the pin 23 is filled with resin 13a.
なお、第３図に示すように、樹脂体１３とリードフレー
ム１１の境界面１６を通って浸入してくる水分により耐
湿性が劣化する可能性がある。Note that, as shown in FIG. 3, moisture resistance may deteriorate due to moisture infiltrating through the interface 16 between the resin body 13 and the lead frame 11.
その対策の第二実施例として、ピン２３の成形跡に樹脂
１３ａを充填するとともに搭載凹部の全周にわたって樹
脂または接着剤１７を充填し、境界面１６に浸透させ、
耐湿性の向上を図る例が挙げられる。As a second embodiment of the countermeasure, the molding trace of the pin 23 is filled with resin 13a, and the resin or adhesive 17 is filled all around the mounting recess and penetrates into the boundary surface 16.
Examples include attempts to improve moisture resistance.
なお、本発明は実施例で述べてきた構造等には限定され
な〜く、 すなわち、第１図、第３図は樹脂パッケージ
として一般的なりＩＰ（デュアル・インライン・パラゲ
ージ）であるが、どんな型式でも構わない、 また、電
子部品の例として表面弾性波素子や圧電振動子と、それ
らの駆動に必要な半導体素子が挙げられるが、両方とも
半導体素子を用いた場合でも本発明は適用が可能である
。It should be noted that the present invention is not limited to the structures described in the embodiments. In other words, although FIGS. 1 and 3 show IP (dual inline package), which is a common resin package, any Also, examples of electronic components include surface acoustic wave elements, piezoelectric vibrators, and semiconductor elements necessary for driving them, but the present invention can be applied even when semiconductor elements are used for both. It is.
［発明の効果］
以上詳述してきたように、本発明よって従来より安価な
、パリ取り工程を必要としない耐湿性のある、中空構造
を有する樹脂パッケージ型の半導体装置を提供すること
ができた。 この樹脂パッケージは、表面弾性波素子や
圧電振動子を含む半導体装置として極めて好適である。[Effects of the Invention] As described in detail above, the present invention makes it possible to provide a resin-packaged semiconductor device having a hollow structure, which is less expensive than conventional semiconductor devices, and has moisture resistance that does not require a deburring process. . This resin package is extremely suitable as a semiconductor device including a surface acoustic wave element or a piezoelectric vibrator.
第１図は本発明第一実施例の半導体装置の断面図、第２
図は本発明における樹脂体を成形する金型の断面図、第
３図は本発明第二実施例の半導体装置の断面図、第４図
は従来の金属製気密封止型半導体装置の断面図である。
２．２ａ・・・電子部品、 ５・・・金属細線、 １１
・・・リードフレーム、 ｌｌａ・・・ボンディング
エリア（接続部位）、 １２・・・搭載凹部、 １３・
・・樹脂体、 １３ａ・・・充填樹脂、 １５・・・樹
脂封止体、■
・・上型、
２２・・・キャビティ、
２３・・・ピン
突部、
２４・・・下型、
２５・・・フレーム押え面。
ａ
２：電子部品
キャビティ：２２
３
２３：ピン突部
第
図FIG. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention, and FIG.
The figure is a sectional view of a mold for molding a resin body according to the present invention, FIG. 3 is a sectional view of a semiconductor device according to a second embodiment of the invention, and FIG. 4 is a sectional view of a conventional metal hermetically sealed semiconductor device. It is. 2.2a...Electronic component, 5...Metal thin wire, 11
...Lead frame, lla...Bonding area (connection part), 12...Mounting recess, 13.
...Resin body, 13a...Filled resin, 15...Resin sealing body, ■...Upper mold, 22...Cavity, 23...Pin protrusion, 24...Lower mold, 25.・Frame holding surface. a 2: Electronic component cavity: 22 3 23: Pin protrusion diagram
Claims (1)
の搭載凹部に露出している凹函形の樹脂体と、上記リー
ドフレームの素子搭載部に搭載されるとともに相互に電
気的に接続される、少なくとも１つの半導体素子を含む
複数個の電子部品と、該電子部品の周囲を中空状態にし
て前記樹脂体の搭載凹部をシーリングする樹脂封止体と
を具備する、樹脂パッケージ型の振動素子を含む半導体
装置。 ２ インサートしたリードフレームの素子搭載部が中央
の搭載凹部に露出するように凹函形の樹脂体を成形し、
該搭載凹部に露出しているリードフレーム上に素子を搭
載するとともに、金属細線によって素子とリードフレー
ムとを電気的に接続した後、該素子の周囲を中空状態に
シーリングした半導体装置を製造するにあたり、前記樹
脂体のモールド金型を構成する一方の型のキャビティ内
にはピン突部を設け、他方の型における上記ピン突部に
対向する部分にはフレーム押え面を設け、上記ピン突部
と上記フレーム押え面によって前記金属細線の接続部位
に沿うリードフレームを隙間なくはさみ込んで樹脂体を
モールド成形するとともに、前記ピン突部による樹脂体
の成形跡には樹脂を充填することを特徴とする樹脂パッ
ケージ型半導体装置の製造方法。[Claims] 1. A concave box-shaped resin body in which the element mounting portion of the inserted lead frame is exposed in the central mounting recess, and a resin body that is mounted on the element mounting portion of the lead frame and electrically connected to each other. A resin package type comprising a plurality of electronic components including at least one semiconductor element to be connected, and a resin sealing body that makes the periphery of the electronic components hollow and seals the mounting recess of the resin body. A semiconductor device including a vibration element. 2. Molding a concave box-shaped resin body so that the element mounting part of the inserted lead frame is exposed in the central mounting recess,
In manufacturing a semiconductor device, the element is mounted on the lead frame exposed in the mounting recess, the element and the lead frame are electrically connected by thin metal wires, and the periphery of the element is sealed in a hollow state. A pin protrusion is provided in the cavity of one of the molds constituting the resin mold, and a frame pressing surface is provided in a portion of the other mold that faces the pin protrusion, and the pin protrusion and The resin body is molded by sandwiching the lead frame along the connecting portion of the thin metal wires without any gaps between the frame holding surfaces, and the molding marks of the resin body by the pin protrusions are filled with resin. A method for manufacturing a resin packaged semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1317143A JPH03178151A (en) | 1989-12-06 | 1989-12-06 | Resin package type semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1317143A JPH03178151A (en) | 1989-12-06 | 1989-12-06 | Resin package type semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03178151A true JPH03178151A (en) | 1991-08-02 |
Family
ID=18084925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1317143A Pending JPH03178151A (en) | 1989-12-06 | 1989-12-06 | Resin package type semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03178151A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006156939A (en) * | 2004-10-27 | 2006-06-15 | Mitsui Chemicals Inc | Resin hollow package and its manufacturing method |
| WO2015166696A1 (en) * | 2014-04-30 | 2015-11-05 | 富士電機株式会社 | Semiconductor module and method for manufacturing same |
-
1989
- 1989-12-06 JP JP1317143A patent/JPH03178151A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006156939A (en) * | 2004-10-27 | 2006-06-15 | Mitsui Chemicals Inc | Resin hollow package and its manufacturing method |
| JP4511994B2 (en) * | 2004-10-27 | 2010-07-28 | 三井化学株式会社 | Manufacturing method of resin hollow package |
| WO2015166696A1 (en) * | 2014-04-30 | 2015-11-05 | 富士電機株式会社 | Semiconductor module and method for manufacturing same |
| JPWO2015166696A1 (en) * | 2014-04-30 | 2017-04-20 | 富士電機株式会社 | Semiconductor module and manufacturing method thereof |
| US9837338B2 (en) | 2014-04-30 | 2017-12-05 | Fuji Electric Co., Ltd. | Semiconductor module with mounting case and method for manufacturing the same |
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