JPH03166220A - Epoxy resin composition for sealing semiconductor - Google Patents
Epoxy resin composition for sealing semiconductorInfo
- Publication number
- JPH03166220A JPH03166220A JP30581089A JP30581089A JPH03166220A JP H03166220 A JPH03166220 A JP H03166220A JP 30581089 A JP30581089 A JP 30581089A JP 30581089 A JP30581089 A JP 30581089A JP H03166220 A JPH03166220 A JP H03166220A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- dicyclopentadiene
- type epoxy
- resistance
- phenol polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 49
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 49
- 239000000203 mixture Substances 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000007789 sealing Methods 0.000 title description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims abstract description 14
- 229920000642 polymer Polymers 0.000 claims abstract description 14
- 238000005538 encapsulation Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 abstract description 16
- 238000010521 absorption reaction Methods 0.000 abstract description 11
- 235000010290 biphenyl Nutrition 0.000 abstract description 8
- 239000004305 biphenyl Substances 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 6
- 239000003086 colorant Substances 0.000 abstract description 4
- 239000011256 inorganic filler Substances 0.000 abstract description 4
- 229910003475 inorganic filler Inorganic materials 0.000 abstract description 4
- 239000006082 mold release agent Substances 0.000 abstract description 4
- 239000006087 Silane Coupling Agent Substances 0.000 abstract description 3
- 235000013869 carnauba wax Nutrition 0.000 abstract description 3
- 239000004203 carnauba wax Substances 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract description 2
- 239000006229 carbon black Substances 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 238000005476 soldering Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- -1 imidazole Chemical compound 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000012966 insertion method Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、樹脂封止型半導体装置を実装する時の半田
付け工程において封止樹脂にクラソクが発生するのが防
止され、さらに、耐湿性および耐熱性に優れた半導体封
止用エポキシ樹脂組成物に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention prevents cracking from occurring in the sealing resin during the soldering process when mounting a resin-encapsulated semiconductor device, and further improves moisture resistance. and an epoxy resin composition for semiconductor encapsulation with excellent heat resistance.
従来より半導体等の電子部品を熱硬化性樹脂を用いて封
止する方注がよく行われてきた。熱硬化性樹脂としては
、エボキシ樹脂組成物が最も一般的に用いられている。2. Description of the Related Art Hitherto, electronic components such as semiconductors have often been encapsulated using thermosetting resins. Epoxy resin compositions are most commonly used as thermosetting resins.
このエボキシ樹脂組成物は、たとえば、クレゾールノボ
ラック型エポキシ樹脂、ビスフェノールＡ型エポキシ樹
脂、脂肪族環状エポキシ樹脂などのエポキシ樹脂；フェ
ノールノボラフクなどの硬化剤；三級ア主ンやイ主ダプ
ールなどの硬化促進剤；シリカやアルミナなどの無機微
粉末がらなる無機質充填材；シランカップリング剤など
のカップリング剤；カルナウバワックスやステアリン酸
などの離型剤；カーボンブランクなどの着色剤などから
構成されている。This epoxy resin composition includes, for example, epoxy resins such as cresol novolac type epoxy resin, bisphenol A type epoxy resin, and aliphatic cyclic epoxy resin; curing agents such as phenol novolafuku; curing accelerator; inorganic filler made of inorganic fine powder such as silica or alumina; coupling agent such as silane coupling agent; mold release agent such as carnauba wax or stearic acid; colorant such as carbon blank, etc. has been done.
最近では、電子部品の小型化、薄型化のため、半導体の
実装方式が従来のビン挿入方式（Ｄ Ｉ Ｒ：デュアル
・インライン・パンケージ等）から表面実装方式（ＳＯ
Ｐ：スモール・アウトライン・パッケージ、ＱＦＰ：ク
オッド・フラット・パッケージ等）へと移行しつつある
。これらの表面実装方式の場合、半導体パッケージは、
実装の際に半田浴に浸漬されるなど高温（たとえば２１
０〜２７０℃〉で処理され、その際パッケージ全体ニ高
温の熱が加わる。この工程で従来の封止用樹脂で封止し
たパッケージは、樹脂部分にクランクが発生したり、大
幅に耐湿性が低下したりするなどの問題を生じ、製品と
して使用できない。Recently, due to the miniaturization and thinning of electronic components, semiconductor mounting methods have changed from the conventional bin insertion method (DIR: dual inline pancage, etc.) to the surface mount method (SO
P: small outline package, QFP: quad flat package, etc.). For these surface mount methods, the semiconductor package is
During mounting, high temperatures such as being immersed in a solder bath (for example, 21
0 to 270°C>, during which high-temperature heat is applied to the entire package. Packages sealed with conventional sealing resin in this process suffer from problems such as cracks occurring in the resin portion and a significant drop in moisture resistance, making them unusable as products.
半田付け工程におけるクランクの発生は、後硬化してか
ら実装工程の間までに吸湿された水分が半田付け加熱時
に爆発的に水蒸気化し、膨張することに起因するといわ
れている。その対策として、後硬化したバソケージを完
全に乾燥し、密封した容器に収納して出荷する方法が用
いられているまた、封止用樹脂の改良も種々検討されて
いる。たとえば、特開昭６４−８７６１６号公報、特開
平１−１０８２５６号公報などには、エポキシ樹脂とし
てビフェニル型エポキシ樹脂を用い、硬化剤として一般
の硬化剤を用いた封止樹脂が提案されている。また、特
開昭６２−１８４０２０号公報、特開昭６１−１０４８
３０号公報などには、硬化剤としてジシクロベンタジエ
ン・フェノール重合体を用い、一般−のエポキシ樹脂を
用いた封止樹脂が提案されている。しかし、これらの公
報で提案されている樹脂では未だ充分な効果が得られて
おらず、改良の余地があった。It is said that the occurrence of cranks in the soldering process is caused by moisture absorbed between post-curing and the mounting process explosively turning into water vapor and expanding during soldering heating. As a countermeasure to this problem, a method is used in which the post-cured bathocage is completely dried and then stored in a sealed container for shipment.Furthermore, various improvements in the sealing resin are being studied. For example, JP-A-64-87616 and JP-A-1-108256 propose sealing resins that use a biphenyl-type epoxy resin as the epoxy resin and a general curing agent as the curing agent. . Also, JP-A-62-184020, JP-A-61-1048
No. 30, etc., proposes a sealing resin using a dicyclobentadiene/phenol polymer as a curing agent and a general epoxy resin. However, the resins proposed in these publications have not yet achieved sufficient effects, leaving room for improvement.
乾燥バ．７ケージを容器に封入する方法は、製造工程お
よび製品の取扱作業が煩雑になるという欠点がある。従
って、表面実装化技術の伸展に対応した封止用樹脂の開
発が望まれているのが現状である。Dry bar. The method of enclosing seven cages in a container has the disadvantage that the manufacturing process and product handling operations are complicated. Therefore, it is currently desired to develop a sealing resin that is compatible with the expansion of surface mounting technology.
この発明は、上述の半田付け工程など高温にさらされた
ときにクランクが発生しにくく、これにより表面実装が
できる樹脂封止半導体装置を可能にするような半導体封
止用エポキシ樹脂組戒物を提供することを課題とする。The present invention provides an epoxy resin composition for semiconductor encapsulation that is less prone to cranking when exposed to high temperatures such as in the soldering process described above, and which enables surface-mountable resin-encapsulated semiconductor devices. The challenge is to provide.
上記課題を解決するために、この発明にかかる半導体封
止用エポキシ樹脂組底物は、下記一般式の：
で表されるビフェニル型エポキシ樹脂（４）、および
下記一般式■：
で表されるジシクロペンタジェン・
フェノール重
合体（Ｉ３）を必須成分とする。In order to solve the above problems, the epoxy resin assembly for semiconductor encapsulation according to the present invention includes a biphenyl-type epoxy resin (4) represented by the following general formula: and a biphenyl-type epoxy resin (4) represented by the following general formula Dicyclopentadiene/phenol polymer (I3) is an essential component.
この発明にかかる半導体封止用エポキシ樹脂組威物は、
上記特定のビフエニル型エポキシ樹脂（４）およびジシ
クロペンタジエン・フェノール！合体（Ｂ）を必須戒分
として含有するので、吸湿率を低減することができ、実
装時の温度で高強度を維持することができ、さらに、半
導体装置（たとえば、半導体チップなど）およびリード
フレームとの密着強度を向上できる。このため、実装時
の半田付け工程などにおける耐クラック性を大幅に向上
させることが可能に゜なった。The epoxy resin composite for semiconductor encapsulation according to the present invention includes:
The above specific biphenyl type epoxy resin (4) and dicyclopentadiene phenol! Since it contains coalescence (B) as an essential precept, moisture absorption rate can be reduced and high strength can be maintained at the temperature during mounting. The adhesion strength can be improved. Therefore, it has become possible to significantly improve crack resistance during the soldering process during mounting.
この発明の半導体封止用樹脂組戒物の必須戒分のｌつで
ある上記エボキシ樹脂（４）は、剛直なビフェニル骨格
を持つため、低弾性率であって、熱時強度に優れている
。さらに、フエニル骨格に疎水性のメチル基を有するた
めに、吸湿性が小さくなるという特徴を持つ。上記一般
式（構造式）■中の繰り返し単位数ｍはＯ〜１．０の範
囲であることが必要であり、この範囲内で有効な耐熱性
を示す。望ましくはｍはＯが良い。ｍが大きくなると、
耐熱性の指標であるＴｇ（ガラス転移温度）が低下し、
高温時強度も低下する。The above-mentioned epoxy resin (4), which is one of the essential precepts of the resin composition for semiconductor encapsulation of this invention, has a rigid biphenyl skeleton, so it has a low elastic modulus and excellent heat strength. . Furthermore, since it has a hydrophobic methyl group in its phenyl skeleton, it has a characteristic of low hygroscopicity. The number m of repeating units in the above general formula (structural formula) (1) must be in the range of 0 to 1.0, and exhibits effective heat resistance within this range. Desirably, m is O. When m becomes large,
Tg (glass transition temperature), which is an index of heat resistance, decreases,
Strength also decreases at high temperatures.
モウ一方の必須戒分である上記ジシクロペンタジエン・
フェノール重合体（ジシクロペンタジェンとフェノール
の重合体）（６）は硬化剤であり、上記一般式■で表さ
れるものである。このような硬化剤を必須成分とするこ
とにより、硬化物の吸湿性が極めて小さくなり、その上
一般のフェノールノボラフク硬化剤と同等の耐熱性を持
つ。一般式■中の繰り返し単位数ｌは、０以上の整数で
あればよく、有効な耐熱性および／または吸湿性を示す
と言う点からは、０〜ｌ５の範囲が好ましく、０〜５．
０がさらに好ましい。また、一般式■中のＲは、Ｈまた
はｌ価の炭化水素基であり、同炭化水素基の炭素数は特
に限定されない。The above dicyclopentadiene, which is one of the essential precepts,
The phenol polymer (polymer of dicyclopentadiene and phenol) (6) is a curing agent and is represented by the above general formula (2). By including such a curing agent as an essential component, the cured product has extremely low hygroscopicity and has heat resistance equivalent to that of a general phenol novolafuku curing agent. The number l of repeating units in the general formula (2) may be any integer greater than or equal to 0, and from the viewpoint of exhibiting effective heat resistance and/or hygroscopicity, it is preferably in the range of 0 to 15, and 0 to 5.
0 is more preferable. Further, R in the general formula (2) is H or an l-valent hydrocarbon group, and the number of carbon atoms in the hydrocarbon group is not particularly limited.
以上のビフェニル型エボキシ樹脂（自）とジシクロペン
タジエン・フェノール重合体（８）とを必須戊分として
含んだエボキシ樹脂組成物を封止材用の樹脂として用い
る。上記（４）およびＯｌ３）のうちのいずれか一方を
必須成分として欠いた場合、半田付け時の耐クラック性
の大幅な向上は期待できない。An epoxy resin composition containing the above biphenyl type epoxy resin (self) and dicyclopentadiene/phenol polymer (8) as essential components is used as a resin for a sealing material. If either one of the above (4) and Ol3) is missing as an essential component, no significant improvement in crack resistance during soldering can be expected.
この発明の半導体封止用エボキシ樹脂組成物には、上記
の必須威分以外にも、必要に応じて適当な硬化促進剤、
無機充填材、カップリング剤、離型剤、着色剤などを加
えることができる。硬化促進剤としては、たとえば、１
，８−ジアザービシク口（５，４，Ｏ）ウンデセン−７
、トリエチレンジアミン、ベンジルジメチルアミン、ト
リエタノールア主ン、ジメチルアミノエタノール、トリ
ス（ジメチルアミノメチル）フェノール等の三級アミン
類：２−メチルイミダゾール、２−エチル−４−メチル
イえダゾール、２−フェニルイミダゾール、２−フェニ
ルー４−メチルイ主タソール２−ヘプタデシルイミダゾ
ール等のイミダゾール類；トリブチルホスフィン、メチ
ルジフェニルホスフィン、トリフェニルホスフィン、ジ
フエニルホスフィン、フェニルホスフィン等の有機ホス
フィン類（リン系硬化促進剤）；テトラフェニルホスホ
ニウムテトラフェニルボレート、トリフエニルホスフィ
ンテトラフエニルボレート、２−エチル−４−メチルイ
ミダゾールテトラフェニルボレート、Ｎ−メチルモルホ
リンテトラフエニルボレート等のテトラフエニルボロン
塩等がある。無機充填材としては、たとえば、シリカや
アルミナなど通常の樹脂封止材に用いられるものが挙げ
られる。カップリング剤としては、たとえば、Ｔグリシ
ドキシブロビルトリメトキシシラン、Ｔアミノブ口ピル
トリエトキシシランなどのシランカップリング剤が挙げ
られる。離型剤としては、たとえば、カルナウバワソク
ス、ステアリン酸、モンクン酸などがあり、着色剤とし
ては、たとえば、カーボンブランクなどがある。しかし
、ここに例示したものに限定されない。In addition to the above-mentioned essential ingredients, the epoxy resin composition for semiconductor encapsulation of the present invention may optionally contain a suitable curing accelerator,
Inorganic fillers, coupling agents, mold release agents, colorants, etc. can be added. As the curing accelerator, for example, 1
,8-diazabisic-(5,4,O)undecene-7
, triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol, and other tertiary amines: 2-methylimidazole, 2-ethyl-4-methylidazole, 2-phenyl Imidazole, such as imidazole, 2-phenyl-4-methyl-tasol, 2-heptadecyl imidazole; organic phosphine (phosphorus curing accelerator) such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, diphenylphosphine, phenylphosphine; Examples include tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, 2-ethyl-4-methylimidazole tetraphenylborate, and N-methylmorpholinetetraphenylborate. Examples of the inorganic filler include those used in common resin sealants, such as silica and alumina. Examples of the coupling agent include silane coupling agents such as T-glycidoxybrobyltrimethoxysilane and T-aminobutytriethoxysilane. Examples of the mold release agent include carnauba wax, stearic acid, and Moncunic acid, and examples of the colorant include carbon blank. However, it is not limited to what is illustrated here.
この発明において、上記ビフエニル型エボキシ樹脂（Ｎ
を必須戊分として含んでいれば、エポキシ樹脂（Ａ）以
外のエボキシ樹脂を併用しても良い。たとえば、一般に
使用されているフェノールノボラック型エボキシ樹脂、
オルソクレゾールノボランク型エボキシ樹脂などのエポ
キシ樹脂を、この発明の効果を阻害しない範囲で適宜何
種類でもエボキシ樹脂（Ａ）と併用することができる。In this invention, the biphenyl type epoxy resin (N
Epoxy resins other than epoxy resin (A) may be used in combination as long as they contain as an essential component. For example, the commonly used phenolic novolac type epoxy resin,
Any number of epoxy resins such as orthocresol novolanc epoxy resins can be used in combination with the epoxy resin (A) as long as the effects of the present invention are not impaired.
また、硬化剤についても、上記ジシクロペンタジエン・
フェノール重合体（Ｂ）を必須戊分として含んでいれば
、（Ｉ３）以外の硬化剤を併用しても良い。このような
（６）以外の硬化剤としては、たとえば、一般に使用さ
れているフェノールノボラソク、タレゾールノボラック
等がある。In addition, regarding the curing agent, the above-mentioned dicyclopentadiene and
As long as the phenol polymer (B) is included as an essential component, a curing agent other than (I3) may be used in combination. Examples of such curing agents other than (6) include commonly used phenol novolasoc and talesol novolak.
なお、ビフエニル型エポキシ樹脂（４）とジシクロペン
タジエン・フェノール重合体の）との当量比は、特に限
定はないが、（６）の水酸基数／（４）のエポキシ基数
−０．７〜１．３が望ましく、さらに、０．９〜１．
１が望ましい。また、他のエポキシ樹脂、硬化剤を併用
する時は、硬化剤の全水酸基数／エボキシ樹脂の全エボ
キシ基数が０．７〜１．３が望ましく、０．９〜１．１
がさらに望ましい。The equivalent ratio of the biphenyl-type epoxy resin (4) to the dicyclopentadiene/phenol polymer is not particularly limited, but it is the number of hydroxyl groups in (6)/the number of epoxy groups in (4) - 0.7 to 1. .3 is desirable, and 0.9 to 1.
1 is desirable. In addition, when using other epoxy resins and curing agents together, it is desirable that the total number of hydroxyl groups in the curing agent/total number of epoxy groups in the epoxy resin is 0.7 to 1.3, and 0.9 to 1.1.
is even more desirable.
この発明によれば、ビフェニル型エポキシ樹脂（Ａ）と
ジシクロペンタジエン・フェノール重合体（８）とを用
いるので、耐リフロー性（半田付け時の耐クラック性）
の良好な耐湿性・耐熱性の優れた半導体封止用エポキシ
樹脂組底物が得られる。According to this invention, since the biphenyl type epoxy resin (A) and the dicyclopentadiene/phenol polymer (8) are used, reflow resistance (crack resistance during soldering) is achieved.
An epoxy resin assembly for semiconductor encapsulation with excellent moisture resistance and heat resistance can be obtained.
（４）のエポキシ樹脂は、疎水性のメチル基を有する剛
直なビフェニル骨格により、低吸湿、高耐熱さらに低弾
性率の特徴を発揮する。The epoxy resin (4) exhibits characteristics of low moisture absorption, high heat resistance, and low elastic modulus due to its rigid biphenyl skeleton having a hydrophobic methyl group.
また、（Ｂ）のジシクロペンタジエン・フェノール重合
体の硬化剤は、その構造中にジシクロペンタジエン骨格
を有するため、極めて低吸湿で、さらにリードフレーム
、半導体装置等との密着性を高めるものと推察される。In addition, the dicyclopentadiene/phenol polymer curing agent (B) has a dicyclopentadiene skeleton in its structure, so it has extremely low moisture absorption and further improves adhesion to lead frames, semiconductor devices, etc. It is inferred.
したがって、この発明の半導体封止用エボキシ樹脂組底
物で封止したバンケージは、半田付け時に発生するバン
ケージクラック等の原因の■つである水分の侵入を少な
くし、さらに低弾性率かつ高密着性であるため、リード
フレームや半導体装置と封止樹脂の界面剥離をおさえ、
また、高温時の強度が高いため、実装時の水蒸気圧に耐
えるものと推察される。Therefore, the bungee sealed with the epoxy resin bottom for semiconductor sealing of the present invention can reduce the intrusion of moisture, which is the cause of bungee cracks that occur during soldering, and has a low elastic modulus and high Adhesive properties prevent interfacial peeling between lead frames, semiconductor devices, and encapsulating resin.
Also, since it has high strength at high temperatures, it is presumed that it can withstand water vapor pressure during mounting.
以下に、この発明の具体的な実施例および比較例を示す
が、この発明は下記実施例に限定されない。Specific examples and comparative examples of the present invention are shown below, but the present invention is not limited to the following examples.
一実施例１一
ビフェニル型エポキシ樹脂（４）として構造式；で示さ
れ、エポキシ当量１９０、融点１０５℃のエボキシ樹脂
ｒＹＸ４０００ＨＪ （油化シェルエボキシ株式会社
の商品名）を用いた。ジシクロペンタジエン・フェノー
ル重合体（６）として構造式；で示され、平均分子量５
５０，ＯＨ当量１７７、融点１１０゜Ｃのフェノール系
硬化剤ｒＤＣ １ ０ ０ＬＬＪ （山陽国策パルプ
株式会社の商品名）を用いた。Example 1 As the biphenyl-type epoxy resin (4), an epoxy resin rYX4000HJ (trade name of Yuka Shell Epoxy Co., Ltd.), which is shown by the structural formula and has an epoxy equivalent of 190 and a melting point of 105°C, was used. The dicyclopentadiene/phenol polymer (6) is represented by the structural formula; and has an average molecular weight of 5.
A phenolic curing agent rDC 100LLJ (trade name of Sanyo Kokusaku Pulp Co., Ltd.) having an OH equivalent of 177 and a melting point of 110°C was used.
第１表に示した原材料を同表に示す重量部で配合し、加
熱ロールを使用して混練温度７０〜ｌ２０℃で約８分間
の条件で混練した。その後、約５１ｌψに粉砕し、半導
体封止用エポキシ樹脂組戒物（エポキシ樹脂戒形材料）
を作製した。The raw materials shown in Table 1 were blended in the parts by weight shown in the same table, and kneaded using heating rolls at a kneading temperature of 70 to 20°C for about 8 minutes. After that, it is crushed to about 51 lψ and made into an epoxy resin compound material for semiconductor encapsulation.
was created.
一実施例２，３および比較例１〜３一
第１表に示した原材料を同表に示す重量部で実施例１と
同様に配合して混練を行い、粉砕して半導体封止用エポ
キシ樹脂組戒物（エボキシ樹脂戊形材料）を作製した。1. Examples 2, 3 and Comparative Examples 1 to 3 - The raw materials shown in Table 1 are mixed in the same weight parts as shown in the table in the same manner as in Example 1, kneaded, and pulverized to form an epoxy resin for semiconductor encapsulation. A kumikaimono (epoxy resin molded material) was made.
（Ａ）以外のエボキシ樹脂として、エポキシ当ｉｔ９５
、融点７０℃のタレゾールノボランク型エボキシ樹脂ｒ
ＥｓｃＮ１９５ＸＬＪ （住友化学工業株式会社の商
品名）を用いた。As an epoxy resin other than (A), epoxy weight is 95
, Talesol novolank type epoxy resin with a melting point of 70°C
EscN195XLJ (trade name of Sumitomo Chemical Industries, Ltd.) was used.
ＣＢ）以外の硬化剤として、ＯＨ当量１０４、融点８２
℃のフェノールノボラソク「タマノール７５２」 （荒
川化学工業株式会社の商品名）を用いた上記実施例およ
び比較例で得られた成形材料をトランスファー戒形機に
て１７０〜１７５℃で９０秒間戒形し、１７５℃で６時
間後硬化し、下記の吸湿率、耐半田クラソク性の各評価
用サンプルを得た。リードフレーム密着強度の評価用サ
ンプルは、下記のやり方で得た。各種特性は、次に示す
方法により測定、評｛面し、結果を第１表に示した。As a curing agent other than CB), OH equivalent is 104, melting point is 82
The molding materials obtained in the above examples and comparative examples using phenol novorasoc "Tamanol 752" (trade name of Arakawa Chemical Industry Co., Ltd.) at 170 to 175 °C for 90 seconds using a transfer molding machine were heated. The sample was molded and cured at 175° C. for 6 hours to obtain the following samples for evaluation of moisture absorption and solder crack resistance. Samples for evaluation of lead frame adhesion strength were obtained in the following manner. Various properties were measured and evaluated by the following methods, and the results are shown in Table 1.
（１１ 吸湿率
６０ｎ＋φ、２４０ｎ厚の円板を戒形し、８５℃、８５
％ＲＨで７２時間吸湿させ、重量変化より吸湿率を求め
た。(11 A disk with a moisture absorption rate of 60n + φ and a thickness of 240n is shaped, heated at 85℃, 85℃
%RH for 72 hours, and the moisture absorption rate was determined from the change in weight.
（２） リードフレーム密着強度
第１図に示す治具を用いて低圧（５〜６ ｋｇ ／ ｃ
ｉ）で１７５℃で成形し、１７５℃で６時間後硬化し、
円柱（ａ＝φ１２ｎ＋、ｂ＝７ｍ厚み）の戊形品３を４
２アロイｔＦｉ２上に得た。第１図中、■は、ポリテト
ラフ口口エチレン樹脂製スペーサである。第２図に示す
万能引張試験器を用いて、前記４２７ロイ板２と戒形品
３との剪断強度をオートグラフで測定した。第２図中、
第１図と同じものには同し番号を付しており、４は上部
引張治具、５は下部チャックである。４２アロイ板２と
成形品３の接触面積は、（０．６ｃｍ）”ｆｆ ’＝
１． １ ３ｃ＋Ｊであつた・
（３）吸湿後の耐半田クラソク性
７．６ｌ謬ｘ ７．５ ＋ｎ Ｘ ０． ４重１厚の半
導体素子をグイパッド寸法１３， ２ｖ＊ Ｘ ８，
２ ＊＊の４２アロイリードフレームに銀ペーストで実
装し、外形寸法１９ｍｍｘ１５璽１×厚み１．８一の６
０ピンフラ，，トパ２７ケージ型ＩＣ金型にて戊形し、
その後、８５℃、８５％ＲＨで７２時間吸湿した後、２
６０℃の半田槽に浸漬した。このときのバンケージクラ
・ノク発生時間を秒数で求めた。(2) Lead frame adhesion strength Using the jig shown in Figure 1, low pressure (5 to 6 kg/c
i) molded at 175°C, post-cured at 175°C for 6 hours,
4 cylindrical (a = φ12n+, b = 7m thickness) round product 3
2 Alloy tFi2. In FIG. 1, ■ is a spacer made of polytetrafluoroethylene resin. Using the universal tensile tester shown in FIG. 2, the shear strength of the 427 Roy plate 2 and the shaped article 3 was measured by autograph. In Figure 2,
Components that are the same as in FIG. 1 are given the same numbers, 4 is an upper tension jig, and 5 is a lower chuck. The contact area between the 42 alloy plate 2 and the molded product 3 is (0.6 cm) "ff '=
1. 1 3c+J (3) Soldering resistance after moisture absorption 7.6l error x 7.5 +n x 0. A 4-layer, 1-thickness semiconductor element with a pad size of 13, 2v* x 8,
2 Mounted on the 42 alloy lead frame with silver paste, external dimensions 19 mm x 15 square 1 x thickness 1.8 - 6
0 pin fla,, shaped using Topa 27 cage type IC mold,
After that, after absorbing moisture for 72 hours at 85°C and 85%RH,
It was immersed in a solder bath at 60°C. At this time, the time required for the bankage crash to occur was determined in seconds.
第１表より明らかなように、実施例ｌ、２および３は、
比較例１、２および３に比べて、吸湿が低く、かつ、リ
ードフレーム密着強度が高いため、吸湿後の耐半田クラ
ンク性が格段に優れる。As is clear from Table 1, Examples 1, 2 and 3 are:
Compared to Comparative Examples 1, 2, and 3, the moisture absorption is low and the lead frame adhesion strength is high, so the solder crank resistance after moisture absorption is significantly superior.
この発明にかかる半導体封止用エボキシ樹脂組或物は、
以上に述べたように、上記特定のビフエニル型エボキシ
樹脂（４）およびジシクロペンタジエン・フェノール重
合体（６）を必須戒分として含有するので、従来の封止
樹脂に比較して低吸湿性および高密着性を有する。この
ため、吸湿後の耐半田クラック性に優れており、その工
業的価値は太きい。The epoxy resin composition for semiconductor encapsulation according to the present invention includes:
As mentioned above, since it contains the above-mentioned specific biphenyl-type epoxy resin (4) and dicyclopentadiene-phenol polymer (6) as essential ingredients, it has lower hygroscopicity and lower hygroscopicity than conventional sealing resins. Has high adhesion. Therefore, it has excellent solder crack resistance after moisture absorption, and its industrial value is great.
第１図は、密着強度の評価に用いた治具の斜視図、第２
図は、密着強度の評価方法を表す側面図である。
３・・・半導体封止用エボキシ樹脂組威物の硬化物であ
る威形品Figure 1 is a perspective view of the jig used to evaluate adhesion strength, Figure 2
The figure is a side view showing a method for evaluating adhesion strength. 3... A shaped product that is a cured product of epoxy resin compound for semiconductor encapsulation
Claims (1)
下記一般式（２）： ▲数式、化学式、表等があります▼・・・（２） 〔式（２）中、ＲはＨまたはＣ＿ｎＨ＿２＿ｎ＿＋＿１
、ｎは０以上の整数、ｌは０以上の整数〕 で表されるジシクロペンタジエン・フェノール重合体（
２）を必須成分とする半導体封止用エポキシ樹脂組成物
。[Claims] 1 A biphenyl-type epoxy resin (A) represented by the following general formula (1): ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(1), and
General formula (2) below: ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(2) [In formula (2), R is H or C_nH_2_n_+_1
, n is an integer of 0 or more, l is an integer of 0 or more] dicyclopentadiene/phenol polymer (
An epoxy resin composition for semiconductor encapsulation containing 2) as an essential component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1305810A JPH0689112B2 (en) | 1989-11-25 | 1989-11-25 | Epoxy resin composition for semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1305810A JPH0689112B2 (en) | 1989-11-25 | 1989-11-25 | Epoxy resin composition for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03166220A true JPH03166220A (en) | 1991-07-18 |
| JPH0689112B2 JPH0689112B2 (en) | 1994-11-09 |
Family
ID=17949639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1305810A Expired - Lifetime JPH0689112B2 (en) | 1989-11-25 | 1989-11-25 | Epoxy resin composition for semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0689112B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05320310A (en) * | 1992-05-20 | 1993-12-03 | Shin Kobe Electric Mach Co Ltd | Resin composition for laminated board |
| EP0578446A2 (en) * | 1992-07-08 | 1994-01-12 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin compositions, preparations and uses thereof, semiconductor devices encapsulated therewith |
| JPH09227652A (en) * | 1996-02-23 | 1997-09-02 | Asahi Chiba Kk | Method for curing epoxy resin having excellent heat resistance and cured epoxy resin product |
| US7332557B2 (en) * | 2001-06-27 | 2008-02-19 | Tohto Kasei Co., Ltd. | Epoxy resin, epoxy resin composition thereof and cured product thereof |
| WO2012137620A1 (en) * | 2011-04-05 | 2012-10-11 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| JP2022543472A (en) * | 2019-08-08 | 2022-10-12 | アディティア・ビルラ・ケミカルズ・（タイランド）・リミテッド・（エポキシ・ディビジョン） | modified epoxy resin |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6198726A (en) * | 1984-10-19 | 1986-05-17 | Mitsubishi Petrochem Co Ltd | Epoxy resin composition for sealing electronic parts |
| JPS62184020A (en) * | 1986-02-07 | 1987-08-12 | Toshiba Chem Corp | Sealing resin composition |
| JPS62201923A (en) * | 1985-10-31 | 1987-09-05 | Sanyo Kokusaku Pulp Co Ltd | Epoxy resin composition |
| JPS63209935A (en) * | 1985-04-15 | 1988-08-31 | ザ ダウ ケミカル カンパニ− | Laminate |
| JPH01105562A (en) * | 1987-10-19 | 1989-04-24 | Sumitomo Bakelite Co Ltd | Resin-sealed semiconductor device |
| JPH01268711A (en) * | 1988-04-20 | 1989-10-26 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
-
1989
- 1989-11-25 JP JP1305810A patent/JPH0689112B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6198726A (en) * | 1984-10-19 | 1986-05-17 | Mitsubishi Petrochem Co Ltd | Epoxy resin composition for sealing electronic parts |
| JPS63209935A (en) * | 1985-04-15 | 1988-08-31 | ザ ダウ ケミカル カンパニ− | Laminate |
| JPS62201923A (en) * | 1985-10-31 | 1987-09-05 | Sanyo Kokusaku Pulp Co Ltd | Epoxy resin composition |
| JPS62184020A (en) * | 1986-02-07 | 1987-08-12 | Toshiba Chem Corp | Sealing resin composition |
| JPH01105562A (en) * | 1987-10-19 | 1989-04-24 | Sumitomo Bakelite Co Ltd | Resin-sealed semiconductor device |
| JPH01268711A (en) * | 1988-04-20 | 1989-10-26 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05320310A (en) * | 1992-05-20 | 1993-12-03 | Shin Kobe Electric Mach Co Ltd | Resin composition for laminated board |
| EP0578446A2 (en) * | 1992-07-08 | 1994-01-12 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin compositions, preparations and uses thereof, semiconductor devices encapsulated therewith |
| EP0578446A3 (en) * | 1992-07-08 | 1994-03-30 | Shinetsu Chemical Co | |
| JPH09227652A (en) * | 1996-02-23 | 1997-09-02 | Asahi Chiba Kk | Method for curing epoxy resin having excellent heat resistance and cured epoxy resin product |
| US7332557B2 (en) * | 2001-06-27 | 2008-02-19 | Tohto Kasei Co., Ltd. | Epoxy resin, epoxy resin composition thereof and cured product thereof |
| WO2012137620A1 (en) * | 2011-04-05 | 2012-10-11 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
| JP2022543472A (en) * | 2019-08-08 | 2022-10-12 | アディティア・ビルラ・ケミカルズ・（タイランド）・リミテッド・（エポキシ・ディビジョン） | modified epoxy resin |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0689112B2 (en) | 1994-11-09 |
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