JPH0265222A - Exposure apparatus of semiconductor device - Google Patents

Exposure apparatus of semiconductor device

Info

Publication number
JPH0265222A
JPH0265222A JP63217934A JP21793488A JPH0265222A JP H0265222 A JPH0265222 A JP H0265222A JP 63217934 A JP63217934 A JP 63217934A JP 21793488 A JP21793488 A JP 21793488A JP H0265222 A JPH0265222 A JP H0265222A
Authority
JP
Japan
Prior art keywords
intensity
slit
ultraviolet ray
carriage
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63217934A
Other languages
Japanese (ja)
Other versions
JP2729058B2 (en
Inventor
Yasuo Aoki
青木　保雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP63217934A priority Critical patent/JP2729058B2/en
Publication of JPH0265222A publication Critical patent/JPH0265222A/en
Application granted granted Critical
Publication of JP2729058B2 publication Critical patent/JP2729058B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To automatically correct and adjust the exposure intensity for preventing the pattern dimension from changing by a method wherein the correction amount of the intensity of ultraviolet ray is decidcd by previously stored data based on the measured values of the intensity of ultraviolet ray so that the slit width and the carriage rate may be respectively adjusted conforming to the correction amount. CONSTITUTION:An ultraviolet ray intensity measuring part 8 measures the intensity of ultraviolet ray passing through a slit 3 to output the data to a data processor 10. This data processor 10 compares the measured values with stored values to decide the corrected amount of pertinent exposure time so that the slit 3 width may be adjusted by a slit controller 11 to control the intensity of the ultraviolet ray irradiated over a semiconductor substrate 7 simultaneously the shifting rate of a carriage 8 may be adjusted by a carriage controller 12 to control the pressure level to the semiconductor substrate 7. Consequently, even when the intensity of the ultraviolet ray is changed in such a constitution, either the slit width or the carriage rate can be automatically corrected corresponding to the change so that the intensity of illumination over the semiconductor substrate 7 may be kept always constant.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造に際してフォトリソグラフィ
技術に用いられる露光装置に関し、特に寸法変動の少な
いパターン転写を可能とした露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an exposure apparatus used in photolithography technology during the manufacture of semiconductor devices, and particularly to an exposure apparatus that enables pattern transfer with little dimensional variation.

〔従来の技術〕[Conventional technology]

従来、この種の露光装置を用いて行うフォトリソグラフ
ィ技術では、露光に用いる紫外線の強度が変動すると、
パターン転写を行うフォトレジストに対する露光量が変
動し、パターン幅寸法等にばらつきが生じて高精度のパ
ターン転写を行うことが難しい。このため、従来の露光
装置では、人間が紫外線強度計測用センサを露光装置内
に挿入して強度測定を行い、露光装置の強度調整ダイヤ
ルにて紫外線強度を一定に保持するように手動調整を行
っている。Conventionally, in photolithography technology that uses this type of exposure equipment, when the intensity of the ultraviolet light used for exposure fluctuates,
The amount of exposure to the photoresist to which the pattern is transferred varies, causing variations in pattern width dimensions, etc., making it difficult to transfer the pattern with high precision. For this reason, in conventional exposure equipment, a person inserts a UV intensity measurement sensor into the exposure equipment to measure the intensity, and manually adjusts the UV intensity using the exposure equipment's intensity adjustment dial to maintain a constant UV intensity. ing.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の露光装置では、−度紫外線強度の調整を
実施した後でも、次の強度調整までの間に強度の変動が
あった場合には、変動した分に対して強度が補正される
ことはない。このため、上述したような露光量の過不足
が生じ、露光された半導体装置のフォトレジストパター
ンの寸法が変動してしまうという問題がある。In the conventional exposure apparatus described above, even after adjusting the intensity of -degree ultraviolet rays, if there is a change in the intensity until the next intensity adjustment, the intensity is corrected for the change. There isn't. For this reason, there is a problem in that the above-described exposure amount is excessive or insufficient, and the dimensions of the photoresist pattern of the exposed semiconductor device vary.

本発明は露光強度を自動的に補正、調整してパターン寸
法の変動を防止する半導体装置の露光装置を提供するこ
とを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide an exposure apparatus for a semiconductor device that automatically corrects and adjusts exposure intensity to prevent variations in pattern dimensions.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置の露光装置は、スリットを通した紫
外線の強度を計測する計測部と、この計測値に基づいて
予め記憶したデータから紫外線強度の補正量を決定する
データ処理部と、この補正量に基づいてスリットの幅と
半導体基板等を走査させるキャリッジの速度を夫々制御
するコントローラとを備えている。The exposure apparatus for semiconductor devices of the present invention includes a measuring section that measures the intensity of ultraviolet light that has passed through a slit, a data processing section that determines the amount of correction for the ultraviolet intensity from data stored in advance based on this measured value, and a data processing section that The device is equipped with a controller that controls the width of the slit and the speed of the carriage that scans the semiconductor substrate etc. based on the amount.

〔作用〕[Effect]

上述した構成では、紫外線強度の変動に対応してスリッ
ト幅及びキャリッジ速度を補正し、半導体基板に対して
常に一定の強度による紫外線露光を行い、露光強度の変
動による転写パターン幅の変動を防止する。In the above-described configuration, the slit width and carriage speed are corrected in response to variations in the ultraviolet intensity, and the semiconductor substrate is always exposed to ultraviolet rays at a constant intensity, thereby preventing variations in the transfer pattern width due to variations in the exposure intensity. .

〔実施例〕〔Example〕

次に、本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の一実施例の正面構成図である。FIG. 1 is a front configuration diagram of an embodiment of the present invention.

図において、１は光源としての紫外線を発生ずる水銀ラ
ンプであり、ここから射出された紫外線は光路２上に配
設したスリット３で絞られ、ハーフミラ−４で反射され
てフォトマスク５を照射する。In the figure, 1 is a mercury lamp that generates ultraviolet rays as a light source, and the ultraviolet rays emitted from this lamp are narrowed down by a slit 3 arranged on the optical path 2, reflected by a half mirror 4, and irradiated onto a photomask 5. .

更に、紫外線は光学系６を通り、半導体基板７上にフォ
トマスクパターンを結像させる。なお、フォトマスク５
．光学系６．及び半導体基板７は走査用のキャリッジ８
に搭載されている。Furthermore, the ultraviolet rays pass through the optical system 6 and image a photomask pattern on the semiconductor substrate 7. In addition, photomask 5
．． Optical system 6. and the semiconductor substrate 7 is mounted on a carriage 8 for scanning.
It is installed in.

そして、前記ハーフミラ−４の背後には、紫外線の一部
を検出する紫外線強度計測部９を配設し、これをデータ
処理部１０に接続している。このデータ処理部１０は予
め紫外線強度の補正量が記憶された記憶部を有しており
、検出した紫外線強度をこの記憶部の補正量と比較し、
その結果に基づいて前記スリット３の幅を制御するコン
トローラ１１と、前記キャリッジ８の移動速度を制御す
るコントローラ１２を制御する。An ultraviolet intensity measuring section 9 for detecting a portion of ultraviolet rays is arranged behind the half mirror 4, and is connected to a data processing section 10. This data processing section 10 has a storage section in which the amount of correction of ultraviolet intensity is stored in advance, and compares the detected ultraviolet intensity with the amount of correction in this storage section,
Based on the results, a controller 11 that controls the width of the slit 3 and a controller 12 that controls the moving speed of the carriage 8 are controlled.

この構成によれば、第２図及び第３図にフローチャート
を示すように、紫外線強度計測部９はスリット３を通っ
た紫外線の強度を計測し、そのデータをデータ処理部１
０へ出力する。このデータ処理部１０では計測値と記憶
値との比較から、好適な露光時間の補正量を決定し、ス
リットコントローラ１１でスリット幅を調整して半導体
基板７に照射される紫外線の強度を制御し、同時にキャ
リッジコントローラ１２でキャリッジ８の移動速度を調
整して、半導体基板に対する露光量を制御する。According to this configuration, as shown in the flowcharts of FIGS. 2 and 3, the ultraviolet intensity measurement section 9 measures the intensity of ultraviolet light that has passed through the slit 3, and transmits the data to the data processing section 1.
Output to 0. The data processing unit 10 determines a suitable exposure time correction amount by comparing the measured value and the stored value, and the slit controller 11 adjusts the slit width to control the intensity of the ultraviolet rays irradiated onto the semiconductor substrate 7. At the same time, the carriage controller 12 adjusts the moving speed of the carriage 8 to control the amount of exposure to the semiconductor substrate.

なお、スリット幅の調整と、キャリッジ速度の調整は、
両者を選択的に行ってもよく、或いは両者を同時に行っ
てもよい。In addition, the adjustment of slit width and carriage speed is as follows.
Both may be performed selectively, or both may be performed simultaneously.

したがって、この構成によれば、紫外線の強度が変化し
た場合でも、これに対応してスリット幅やキャリッジ速
度を自動的に補正し、半導体基板７に対する紫外線照度
を常に一定に保持することが可能となる。これにより、
フォトレジストに対する露光量を一定にし、転写パター
ンの幅を均一にして高精度のパターン転写を実現する。Therefore, according to this configuration, even if the intensity of ultraviolet rays changes, the slit width and carriage speed can be automatically corrected in response to the change, and the intensity of ultraviolet rays on the semiconductor substrate 7 can always be kept constant. Become. This results in
Highly accurate pattern transfer is achieved by keeping the exposure amount to the photoresist constant and making the width of the transfer pattern uniform.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、紫外線の強度を計測部で
計測した上で、予め記憶したデータからその補正量を決
定し、かつこの補正量に基づいてスリット幅とキャリッ
ジ速度を夫々制御するように構成しているので、紫外線
強度の変動に対応してスリット幅及びキャリッジ速度を
補正し、半導体基板に対して常に一定の強度による紫外
線露光を行って、紫外線強度のばらつきによるフォトレ
ジストパターンの寸法のばらつきを低減できる効果があ
る。As explained above, the present invention measures the intensity of ultraviolet rays with a measuring section, determines the amount of correction from data stored in advance, and controls the slit width and carriage speed, respectively, based on this amount of correction. Since the slit width and carriage speed are corrected in response to variations in UV intensity, the semiconductor substrate is always exposed to UV rays at a constant intensity, and the dimensions of the photoresist pattern due to variations in UV intensity can be corrected. This has the effect of reducing variations in

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例の正面構成図、第２図及び第
３図は夫々露光量を補正する際の工程を示すフローチャ
ートである。 １・・・水銀ランプ、２・・・光路、３・・・スリット
、４・・・ハーフミラ−１５・・・フォトマスク、６・
・・光学系、７・・・半導体基板、８・・・キャリッジ
、９・・・紫外線強度計測部、１０・・・データ処理部
、１１・・・スリットコントローラ、１２・・・キャリ
ッジコントローラ。FIG. 1 is a front configuration diagram of an embodiment of the present invention, and FIGS. 2 and 3 are flowcharts showing steps for correcting the exposure amount, respectively. DESCRIPTION OF SYMBOLS 1... Mercury lamp, 2... Optical path, 3... Slit, 4... Half mirror 15... Photomask, 6...
...Optical system, 7. Semiconductor substrate, 8. Carriage, 9. Ultraviolet intensity measurement section, 10. Data processing section, 11. Slit controller, 12. Carriage controller.

Claims (1)

【特許請求の範囲】[Claims] １、フォトマスク、半導体基板等をキャリッジで移動さ
せながらスリットを通した紫外線を照射させる構成の露
光装置において、前記紫外線の強度を計測する計測部と
、この計測値に基づいて予め記憶したデータから紫外線
強度の補正量を決定するデータ処理部と、この補正量に
基づいて前記スリットの幅とキャリッジの速度を夫々制
御するコントローラとを備えることを特徴とする半導体
装置の露光装置。1. In an exposure apparatus configured to irradiate ultraviolet rays through a slit while moving a photomask, semiconductor substrate, etc. with a carriage, there is a measuring section that measures the intensity of the ultraviolet rays, and a measuring section that measures the intensity of the ultraviolet rays, and from pre-stored data based on this measurement value. 1. An exposure apparatus for a semiconductor device, comprising: a data processing section that determines a correction amount for ultraviolet light intensity; and a controller that controls the width of the slit and the speed of the carriage, respectively, based on the correction amount.
JP63217934A 1988-08-31 1988-08-31 Exposure equipment for semiconductor devices Expired - Lifetime JP2729058B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63217934A JP2729058B2 (en) 1988-08-31 1988-08-31 Exposure equipment for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63217934A JP2729058B2 (en) 1988-08-31 1988-08-31 Exposure equipment for semiconductor devices

Publications (2)

Publication Number Publication Date
JPH0265222A true JPH0265222A (en) 1990-03-05
JP2729058B2 JP2729058B2 (en) 1998-03-18

Family

ID=16712001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63217934A Expired - Lifetime JP2729058B2 (en) 1988-08-31 1988-08-31 Exposure equipment for semiconductor devices

Country Status (1)

Country Link
JP (1) JP2729058B2 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0855793A (en) * 1995-08-29 1996-02-27 Nikon Corp Scanning exposure method and scanning aligner
JPH08250402A (en) * 1995-03-15 1996-09-27 Nikon Corp Method and device for scanning exposure
KR970022562A (en) * 1995-10-12 1997-05-30 김광호 Exposure device
US6100515A (en) * 1993-06-14 2000-08-08 Nikon Corporation Scanning exposure method and apparatus in which a mask and a substrate are moved at different scan velocities and exposure parameters are varied
US6259510B1 (en) 1993-02-01 2001-07-10 Nikon Corporation Exposure method and apparatus
US6456363B2 (en) 1993-02-24 2002-09-24 Nikon Corporation Exposure control apparatus and method
US6900879B2 (en) 1993-05-28 2005-05-31 Nikon Corporation Projection exposure apparatus
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method

Cited By (24)

* Cited by examiner, † Cited by third party
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US6259510B1 (en) 1993-02-01 2001-07-10 Nikon Corporation Exposure method and apparatus
US6411364B1 (en) 1993-02-01 2002-06-25 Nikon Corporation Exposure apparatus
US6456363B2 (en) 1993-02-24 2002-09-24 Nikon Corporation Exposure control apparatus and method
US6900879B2 (en) 1993-05-28 2005-05-31 Nikon Corporation Projection exposure apparatus
US6100515A (en) * 1993-06-14 2000-08-08 Nikon Corporation Scanning exposure method and apparatus in which a mask and a substrate are moved at different scan velocities and exposure parameters are varied
US6396071B1 (en) 1993-06-14 2002-05-28 Nikon Corporation Scanning exposure method and apparatus
JPH08250402A (en) * 1995-03-15 1996-09-27 Nikon Corp Method and device for scanning exposure
JPH0855793A (en) * 1995-08-29 1996-02-27 Nikon Corp Scanning exposure method and scanning aligner
KR970022562A (en) * 1995-10-12 1997-05-30 김광호 Exposure device
US9678437B2 (en) 2003-04-09 2017-06-13 Nikon Corporation Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction
US9885959B2 (en) 2003-04-09 2018-02-06 Nikon Corporation Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator
US9423698B2 (en) 2003-10-28 2016-08-23 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US9760014B2 (en) 2003-10-28 2017-09-12 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
US10281632B2 (en) 2003-11-20 2019-05-07 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction
US9885872B2 (en) 2003-11-20 2018-02-06 Nikon Corporation Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light
US10007194B2 (en) 2004-02-06 2018-06-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10234770B2 (en) 2004-02-06 2019-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10241417B2 (en) 2004-02-06 2019-03-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US10101666B2 (en) 2007-10-12 2018-10-16 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
US9857599B2 (en) 2007-10-24 2018-01-02 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9341954B2 (en) 2007-10-24 2016-05-17 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9678332B2 (en) 2007-11-06 2017-06-13 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method

Also Published As

Publication number Publication date
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