JPH01165968A - Wafer probing apparatus - Google Patents

Abstract

PURPOSE:To suppress an effect due to oscillation on the occasion of evaluation measurement of FET and thereby to obtain a device capable of conducting highly precise measurement, by providing a wave-absorbing material at least in a part of a signal takeout conductor needle taking out a signal from a high- frequency semiconductor element. CONSTITUTION:A wave-absorbing material 4 of ferrite is so fitted as to cover a place as near to a probe needle 3 tending to cause oscillation in an insulative blade 1 and a signal wire 2, as possible. A signal take out conductor needle 5 is soldered on a probe card 9 according to the disposition of pads 8 on a wafer 6, and it is set on a wafer probing apparatus, together with the wafer 6 set on a prober stage 7, so as to execute measurement. An electromagnetic wave caused by the oscillation on the occasion of evaluation measurement of FET is absorbed by this wave-absorbing material 4, and thus the precision in the measurement can be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a probing device for measuring the characteristics of high-frequency semiconductor devices, and more particularly to a signal extraction conductor needle for wafer probing.

[Conventional technology]

FIG. 4 shows a probe card (9) using a conventional signal extraction conductor needle (5). FIG. 5 shows an example of the structure of a signal extraction conductor needle of a conventional probing device. 6th
The figure shows a wafer (61) and probe card (9) set in a conventional wafer probing device. In the figure, (1) is an insulating blade made of an insulating material such as ceramic, and (2) is an insulating blade. The signal line is formed by forming a metal thin film on the surface of the insulating blade (1), and the signal line (3) is an insulating blade (
A probe needle is provided at the end of (1) and connected to the signal line (2), (5) is a signal extraction conductor needle consisting of (11 to (3+)), and (9) is provided with a through hole 00 in a predetermined part. , a field effect transistor (hereinafter F
Three signal extraction conductor needles (5) provided corresponding to the arrangement of the source, drain, and gate of the ET (referred to as ET) are attached, and the probe needle (3) at the tip passes through this through hole 00) to the lower surface side. A probe card (91) was installed so that it would erupt into a volcano.

This probe card (9) is provided at one end with a terminal (11) connected to the main body of a wafer probing device which is a test device (not shown), and also has signal lines ( Wires (1z) connected to the probe card (61) are provided. (61 is a wafer on which a plurality of FETs to be measured by the probe card (51) are formed, and (7) is a blower stage on which the wafer (61) is mounted.

Conventional devices include a FET cage formed on a wafer;
Set the probe card +91 and wafer (61) prepared according to the arrangement of the drain and source pads in the wafer roving device, and bring the probe needle (3) into contact with the pad (8)! via the signal line (2). The static characteristics of the FET are measured by exchanging signals with the FET and the power supply, voltmeter, ammeter, etc. Once the measurement of one FET is completed, the blower stage (7) is moved and the next OFF and T measurements are performed. .

[Problem that the invention seeks to solve]

However, when measuring the static characteristics of an FET using a conventional probe card, high-frequency components are fed back between the input and output via the parasitic capacitance that exists between the probe needles in contact with the gate and drain of the FET, resulting in low-frequency Causes oscillation. The electromagnetic waves generated by this oscillation affect signals indicating the original static characteristics of the FET, making it extremely difficult to perform measurements.

The present invention was made to solve the above-mentioned problems, and an object of the present invention is to provide an apparatus that can suppress the influence of oscillation during evaluation and measurement of FETs and can perform highly accurate measurements.

[Means for solving problems]

Extracting a signal from the high frequency semiconductor device according to the present invention,
The signal range output conductor needle is provided with a radio wave absorbing material on at least a portion thereof.

[Effect]

The signal extraction conductor needle in the present invention absorbs electromagnetic waves generated by oscillation using a radio wave absorbing material.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure shows the structure of a signal range extraction conductor needle of a wafer probing apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view of the main part of FIG. 1. FIG. 3 is an explanatory diagram of a wafer (61) set in the wafer probing apparatus according to the present invention. ) is a radio wave absorbing material attached to cover as close as possible to the wafer (6).This radio wave absorbing material (41 is made of ferrite). The upper pads (8) are soldered onto the probe card (9) according to the arrangement, and the wafer (61) is set on the wafer probing device together with the wafer (61) set on the blower stage (7) for measurement.

The radio wave absorbing material (4) can absorb electromagnetic waves caused by oscillation during evaluation and measurement of the FET, thereby improving measurement accuracy.

In the above embodiment, ferrite was used as the radio wave absorption source, but the same effect as in the above embodiment can be obtained by using other magnetic materials.

〔Effect of the invention〕

As described above, according to the present invention, since the electromagnetic waves generated by oscillation during evaluation and measurement of high-frequency semiconductor devices are absorbed by the radio wave absorbing material, highly accurate measurements are possible.

[Brief explanation of the drawing]

FIG. 1 is a front view showing a signal extraction conductor needle of a wafer probing apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view of the main part thereof, and FIG. 4 is a perspective view of a conventional probe card, and FIG. 5 is a front view of a conventional signal extraction conductor needle.
FIG. 6 is an explanatory diagram showing a state in which a wafer and a probe card are set in a conventional wafer probing apparatus. +I+ is an insulating blade, (2) is a signal line, (3) is a probe needle, (4) is a radio wave absorber, (5) is a signal extraction conductor needle, +611: wafer, (7) is a blower stage, (8 ) is a pad, (9) is a probe card, 0.01
is a through hole, (1, 1) is a terminal, and a2) is a wiring. In addition, the same reference numerals in the figures indicate the same or equivalent parts, respectively.

Claims (3)

[Claims] (1) A wafer probing device for measuring characteristics of a high-frequency semiconductor device, characterized in that a radio wave absorbing material is provided on at least a portion of a signal extraction conductor needle for extracting a signal from the high-frequency semiconductor device. (2) The wafer probing apparatus according to claim 1, wherein the radio wave absorbing material is a magnetic material. (3) The signal extraction conductor needle equipped with radio wave absorbing material is
3. The wafer probing apparatus according to claim 1, wherein the wafer probing apparatus is arranged at a position corresponding to a gate or drain electrode pad of a field effect transistor.