JP7340160B2 - Vapor deposition mask manufacturing method and vapor deposition mask - Google Patents

Description

The present disclosure relates to a method for manufacturing a vapor deposition mask and a vapor deposition mask.

Display devices used in portable devices such as smartphones and tablets are preferably high-definition, and preferably have a pixel density of 400 ppi or more, for example. Furthermore, there is an increasing demand for portable devices to be compatible with ultra high definition (UHD), and in this case, the pixel density of the display device is preferably 800 ppi or higher, for example.

Among display devices, organic EL display devices are attracting attention because of their good responsiveness, low power consumption, and high contrast. 2. Description of the Related Art As a method for forming pixels of an organic EL display device, a method is known in which pixels are formed in a desired pattern using a deposition mask in which through holes are formed in a desired pattern. Specifically, first, a vapor deposition mask is combined with a vapor deposition target substrate for an organic EL display device. Subsequently, a vapor deposition material containing an organic material is vapor-deposited onto the substrate to be vapor-deposited through the through-hole of the vapor deposition mask. Thereby, the vapor deposition layer containing the vapor deposition material can be formed as pixels on the substrate to be vapor deposited in a pattern similar to the through holes of the vapor deposition mask.

As a method for manufacturing such a vapor deposition mask, a method is known in which through holes are formed in a metal plate by etching using photolithography technology (see, for example, Patent Document 1).

Patent No. 5382259

An object of the present disclosure is to provide a method for manufacturing a deposition mask and a deposition mask that can improve definition.

A method for manufacturing a vapor deposition mask according to the present disclosure includes a preparation step, a thickness reduction step, a through hole formation step, and a separation step. In the preparation step, a metal plate is prepared that is separably attached to a support substrate via a bonding layer. In the thickness reduction step, the thickness of the metal plate is reduced to obtain a first metal layer. In the through hole forming step, a through hole is formed in the first metal layer. In the separation step, the first metal layer is separated from the support substrate.

A vapor deposition mask according to the present disclosure includes a first metal layer having a first surface and a second surface located on the opposite side of the first surface, and a through hole provided in the first metal layer. There is. The surface roughness of the second surface of the first metal layer is smaller than the surface roughness of the first surface.

According to the present disclosure, definition can be increased.

FIG. 1 is a diagram illustrating a vapor deposition apparatus including a vapor deposition mask according to an embodiment of the present disclosure. FIG. 1 is a plan view showing a deposition mask device according to an embodiment of the present disclosure. 3 is a diagram schematically showing a cross section taken along line AA in FIG. 2. FIG. 4 is a cross-sectional view schematically showing the vapor deposition mask of FIG. 3. FIG. FIG. 5 is an enlarged sectional view showing an example of the through hole of FIG. 4. FIG. 3 is a partially enlarged plan view of the vapor deposition mask of FIG. 2. FIG. 7 is an enlarged plan view showing a group of through holes of the vapor deposition mask of FIG. 6. FIG. 7A is an enlarged plan view showing a modified example of the through-hole group in FIG. 7A. FIG. FIG. 3 is a diagram showing a preparation step of preparing a metal plate attached to a support substrate in a method for manufacturing a vapor deposition mask according to an embodiment of the present disclosure. FIG. 2 is a diagram showing a first etching step of a thickness reduction step in a method for manufacturing a deposition mask according to an embodiment of the present disclosure. FIG. 3 is a diagram illustrating a polishing step in a thickness reduction step in a method for manufacturing a deposition mask according to an embodiment of the present disclosure. FIG. 3 is a diagram illustrating a resist layer forming step of a through hole forming step in a method for manufacturing a vapor deposition mask according to an embodiment of the present disclosure. FIG. 3 is a diagram illustrating an exposure step of a through hole forming step in a method for manufacturing a vapor deposition mask according to an embodiment of the present disclosure. FIG. 3 is a diagram showing a developing step of a through-hole forming step in a method for manufacturing a vapor deposition mask according to an embodiment of the present disclosure. FIG. 7 is a diagram illustrating a second etching step of a through hole forming step in the method for manufacturing a vapor deposition mask according to an embodiment of the present disclosure. FIG. 3 is a diagram illustrating a resist layer removal step in a through hole forming step in a method for manufacturing a vapor deposition mask according to an embodiment of the present disclosure. FIG. 6 is a diagram illustrating an attachment step of attaching a second metal layer to the first metal layer in the method for manufacturing a vapor deposition mask according to an embodiment of the present disclosure. FIG. 3 is a diagram illustrating a separation step of separating a deposition mask from a support substrate in a method for manufacturing a deposition mask according to an embodiment of the present disclosure. It is a figure which shows the tension|tensile_strength application process which applies tension|tensile_strength to a vapor deposition mask in the manufacturing method of the vapor deposition mask apparatus by embodiment of this indication. FIG. 19 is a plan view of FIG. 18; FIG. 2 is a cross-sectional view showing a deposition substrate manufactured using a deposition mask in an embodiment of the present disclosure.

In this specification and the drawings, unless otherwise specified, terms used to refer to materials that form the basis of a certain structure, such as "substrate", "substrate", "plate", "sheet", "film", etc. , are not distinguishable from each other solely on the basis of differences in designation.

In this specification and the drawings, unless otherwise specified, terms such as "parallel" and "perpendicular", lengths and angles that specify shapes, geometrical conditions, and their degrees are used, unless otherwise specified. shall be interpreted to include the extent to which similar functions can be expected, without being bound by a strict meaning.

In this specification and the drawings, unless otherwise specified, a certain structure such as a certain member or a certain region is "over" or "below" another structure such as another member or another region; The terms "above" and "below", or "above" and "below" include cases where one structure is in direct contact with another structure. Furthermore, it also includes a case where another structure is included between one structure and another structure, that is, a case where they are indirectly in contact with each other. Furthermore, unless otherwise specified, the terms "above", "above", "above", or "bottom", "lower side", and "lower" may be used in reversed vertical directions.

In this specification and the drawings, unless otherwise specified, the same parts or parts having similar functions will be denoted by the same or similar symbols, and repeated description thereof may be omitted. In addition, the dimensional ratios in the drawings may differ from the actual ratios for convenience of explanation, or a part of the structure may be omitted from the drawings.

In this specification and the drawings, unless otherwise specified, combinations may be made with other embodiments and modifications to the extent that no contradiction occurs. Further, other embodiments and other embodiments and modifications may be combined as long as no contradiction occurs. Furthermore, the modified examples may be combined with each other as long as no contradiction occurs.

In this specification and the drawings, unless otherwise specified, when multiple steps are disclosed for a method such as a manufacturing method, other undisclosed steps are not performed between the disclosed steps. It's okay. Further, the order of the disclosed steps is arbitrary as long as no contradiction occurs.

In this specification and the drawings, unless otherwise specified, a numerical range expressed by the symbol "~" includes the numbers placed before and after the symbol "~". For example, the numerical range defined by the expression "34-38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less."

In this specification and the drawings, unless otherwise specified, in one embodiment of this specification, an organic material is used for patterning an organic material in a desired pattern on a substrate when manufacturing an organic EL display device. An example of a vapor deposition mask and its manufacturing method will be explained. However, the present embodiment is not limited to such application, and can be applied to vapor deposition masks used for various purposes.

Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not to be interpreted as being limited to only these embodiments.

A first aspect of the present disclosure includes:
a preparation step of preparing a metal plate that is separably attached to a support substrate via a bonding layer;
a thickness reduction step of reducing the thickness of the metal plate to obtain a first metal layer;
a through hole forming step of forming a through hole in the first metal layer;
A method for manufacturing a vapor deposition mask, comprising: a separation step of separating the first metal layer from the support substrate;
It is.

As a second aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the first aspect described above,
The thickness reduction step includes a polishing step of reducing the thickness of the first metal layer by polishing the surface of the first metal layer opposite to the support substrate.
You can do it like this.

As a third aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the second aspect described above,
The thickness reducing step includes, before the polishing step, a first etching step of etching a surface of the first metal layer opposite to the support substrate to reduce the thickness of the first metal layer. ing,
You can do it like this.

As a fourth aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to each of the above-mentioned second aspect or the above-mentioned third aspect,
The through hole forming step includes a resist layer forming step of forming a resist layer on the polished surface of the first metal layer, an exposure step of exposing the resist layer, and developing the resist layer to form a resist opening. and a second etching step of etching the first metal layer through the resist opening to form the through hole.
You can do it like this.

As a fifth aspect of the present disclosure, in the method of manufacturing a vapor deposition mask according to each of the first aspect to the fourth aspect described above,
The thickness of the first metal layer after the thickness reduction step may be 3 μm or more and 13 μm or less.

As a sixth aspect of the present disclosure, in the method of manufacturing a vapor deposition mask according to each of the first aspect to the fifth aspect described above,
After the through-hole forming step and before the separating step, a second metal layer having a metal layer opening overlapping the through-hole in plan view, and a second metal layer extending outside the first metal layer. further comprising an attaching step of attaching a layer to the first metal layer;
You can do it like this.

As a seventh aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the sixth aspect described above,
The thickness of the second metal layer is thicker than the thickness of the first metal layer.
You can do it like this.

As an eighth aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-mentioned sixth aspect or the above-mentioned seventh aspect,
The first metal layer and the second metal layer are each made of an iron alloy containing nickel,
You can do it like this.

As a ninth aspect of the present disclosure, in the method of manufacturing a vapor deposition mask according to each of the above-mentioned sixth aspect to the above-mentioned eighth aspect,
The thickness of the second metal layer is 10 μm or more and 50 μm or less,
You can do it like this.

As a tenth aspect of the present disclosure, in the method of manufacturing a vapor deposition mask according to each of the above-mentioned sixth aspect to the above-mentioned ninth aspect,
In the attachment step, the second metal layer is joined to the first metal layer via a resin layer.
You can do it like this.

As an eleventh aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the tenth aspect described above,
The resin layer includes polyimide.
You can do it like this.

As a twelfth aspect of the present disclosure, in the method for manufacturing a vapor deposition mask according to the above-described tenth aspect or the above-described eleventh aspect,
The thickness of the resin layer is 1 μm or more and 10 μm or less,
You can do it like this.

Note that the above-described first to twelfth aspects may be vapor deposition masks manufactured by the respective vapor deposition mask manufacturing methods of the first to twelfth aspects.

A thirteenth aspect of the present disclosure is:
a first metal layer having a first surface and a second surface located on the opposite side of the first surface;
a through hole provided in the first metal layer,
a vapor deposition mask, wherein the second surface of the first metal layer has a surface roughness smaller than that of the first surface;
It is.

As a fourteenth aspect of the present disclosure, in the vapor deposition mask according to the thirteenth aspect described above,
The thickness of the first metal layer is 3 μm or more and 13 μm or less,
You can do it like this.

As a fifteenth aspect of the present disclosure, in the vapor deposition mask according to the thirteenth aspect or the fourteenth aspect described above,
further comprising a second metal layer provided on the first metal layer,
The second metal layer has a metal layer opening that overlaps the through hole in a plan view, and extends to the outside of the first metal layer.
You can do it like this.

As a sixteenth aspect of the present disclosure, in the vapor deposition mask according to the fifteenth aspect described above,
The thickness of the second metal layer is thicker than the thickness of the first metal layer.
You can do it like this.

As a seventeenth aspect of the present disclosure, in the vapor deposition mask according to the above-described fifteenth aspect or the above-described sixteenth aspect,
The first metal layer and the second metal layer are each made of an iron alloy containing nickel,
You can do it like this.

As an 18th aspect of the present disclosure, in the vapor deposition mask according to each of the above-mentioned 15th aspect to the above-mentioned 17th aspect,
The thickness of the second metal layer is 10 μm or more and 50 μm or less,
You can do it like this.

As a nineteenth aspect of the present disclosure, in the vapor deposition mask according to each of the fifteenth aspect to the eighteenth aspect described above,
The second metal layer is bonded to the first metal layer via a resin layer.
You can do it like this.

As a 20th aspect of the present disclosure, in the vapor deposition mask according to the 19th aspect described above,
The resin layer includes polyimide.
You can do it like this.

As a twenty-first aspect of the present disclosure, in the vapor deposition mask according to each of the nineteenth aspect or the twentieth aspect described above,
The thickness of the resin layer is 1 μm or more and 10 μm or less,
You can do it like this.

Hereinafter, a vapor deposition mask and a method for manufacturing the vapor deposition mask according to an embodiment of the present disclosure will be described with reference to FIGS. 1 to 20.

First, a vapor deposition apparatus 80 that performs a vapor deposition process of vapor depositing a vapor deposition material onto a target object will be described with reference to FIG.

As shown in FIG. 1, the vapor deposition apparatus 80 may include a vapor deposition source (for example, a crucible 81), a heater 83, and a vapor deposition mask device 10. Further, the vapor deposition apparatus 80 may further include an exhaust means (not shown) for creating a vacuum atmosphere inside the vapor deposition apparatus 80. The crucible 81 is provided inside the vapor deposition apparatus 80 and is configured to contain a vapor deposition material 82 such as an organic light emitting material. Heater 83 is configured to heat crucible 81. By heating the crucible 81 in a vacuum atmosphere, the deposition material 82 is evaporated.

The vapor deposition mask device 10 is arranged within the vapor deposition device 80 so as to face the crucible 81 . The vapor deposition mask device 10 may be placed above the crucible 81. A deposition target substrate 91 is arranged so as to face the deposition mask 20 of the deposition mask device 10 . The evaporation target substrate 91 is an object to which the evaporation material 82 is attached. The deposition target substrate 91 may be placed above the deposition mask 20. The vapor deposition material flying from the crucible 81 passes through a through hole 40 (described later) of the vapor deposition mask 20 and adheres to the substrate 91 to be vapor deposited.

As shown in FIG. 1, the vapor deposition apparatus 80 may include a magnet 85 disposed on the surface of the vapor deposition target substrate 91 opposite to the vapor deposition mask 20. By providing the magnet 85, the evaporation mask 20 can be drawn toward the magnet 85 by magnetic force, and the evaporation mask 20 can be brought into close contact with the substrate 91 to be evaporated. As a result, it is possible to suppress the occurrence of shadows (described later) in the vapor deposition process, and improve the shape accuracy and positional accuracy of the vapor deposition layer 92 (see FIG. 20) formed by the vapor deposition material 82 attached to the vapor deposition target substrate 91. can be increased. A cooling plate (not shown) may be interposed between the deposition target substrate 91 and the magnet 85 to cool the deposition target substrate 91 during deposition. Alternatively, the deposition mask 20 may be brought into close contact with the deposition target substrate 91 using an electrostatic chuck that utilizes electrostatic force.

Next, the vapor deposition mask device 10 according to this embodiment will be explained with reference to FIGS. 2 and 3.

As shown in FIG. 2, the vapor deposition mask device 10 according to this embodiment may include a frame 15 and a vapor deposition mask 20. A single vapor deposition mask 20 is fixed to the frame 15. In this embodiment, the vapor deposition mask 20 has a plurality of through-hole groups 30 (or a plurality of effective regions 23) arranged two-dimensionally in parallel in the first direction D11 and the second direction D12.

The frame 15 supports the vapor deposition mask 20 in a stretched state in a plane direction so that the vapor deposition mask 20 does not bend. That is, the vapor deposition mask 20 is stretched over the frame 15.

As shown in FIG. 3, the frame 15 has a first frame surface 15a located on the vapor deposition mask 20 side and a second frame surface 15b located on the opposite side to the first frame surface 15a. Good too. A vapor deposition mask 20 is fixed to the first frame surface 15a. Note that FIG. 3 is a diagram schematically showing a cross section taken along the line AA in FIG. There is.

The frame 15 may have a frame shape in plan view. Further, the frame 15 may have a frame opening 16 that exposes the through hole 40 of the vapor deposition mask 20. The frame opening 16 extends through the frame 15 from the first frame surface 15a to the second frame surface 15b. Here, "planar view" is a term meaning viewed in the thickness direction of the vapor deposition mask 20 or the first metal layer 21, and for example, a term meaning viewed in a direction perpendicular to the plane of the paper in FIG. shall be.

The vapor deposition mask 20 may be fixed to the frame 15 by, for example, welding at a second metal layer 22 of the vapor deposition mask 20, which will be described later. For example, the vapor deposition mask 20 may be fixed to the frame 15 by spot welding. In this case, as shown in FIG. 2, a plurality of dot-like welding marks 19 arranged in a direction along the outer peripheral edge of the vapor deposition mask 20 may be formed by spot welding. In FIG. 2, only some welding marks 19 are shown for clarity of the drawing.

Next, a vapor deposition mask and a method for manufacturing the vapor deposition mask according to an embodiment of the present disclosure will be described with reference to FIGS. 4 to 20. Here, a description will be given taking as an example a vapor deposition mask 20 obtained by etching a rolled material.

First, the configuration of the vapor deposition mask 20 according to this embodiment will be described with reference to FIGS. 4 to 7B.

As shown in FIG. 4, the vapor deposition mask 20 includes a first metal layer 21, a second metal layer 22 provided on the first metal layer 21, a through hole 40 provided in the first metal layer 21, may be provided. A through hole group 30 made up of two or more through holes 40 may be provided in the first metal layer 21 . The second metal layer 22 may be located on the side of the frame 15 described above, and the first metal layer 21 may be located on the opposite side to the frame 15 (see FIG. 3).

As shown in FIG. 4, the first metal layer 21 may have a first surface 21a and a second surface 21b located on the opposite side to the first surface 21a. The first surface 21a may be a surface to which the deposition target substrate 91 comes into close contact during vapor deposition. The second surface 21b may be the surface on the side of the frame 15 described above.

The thickness H1 of the first metal layer 21 may be, for example, 3 μm or more, 4 μm or more, 6 μm or more, or 7 μm or more. By setting the thickness H1 to 3 μm or more, the mechanical strength of the vapor deposition mask 20 can be ensured. Further, the thickness H1 may be, for example, 9 μm or less, 10 μm or less, 12 μm or less, or 13 μm or less. By setting the thickness H1 to 13 μm or less, it is possible to suppress the occurrence of shadows. The range of thickness H1 may be defined by a first group consisting of 3 μm, 4 μm, 6 μm and 7 μm, and/or a second group consisting of 9 μm, 10 μm, 12 μm and 13 μm. The range of the thickness H1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the thickness H1 may be determined by a combination of any two of the values included in the first group described above. The range of the thickness H1 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 3 μm or more and 13 μm or less, 3 μm or more and 12 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 9 μm or less, or 3 μm or more and 7 μm or less. Often, it may be 3 μm or more and 6 μm or less, 3 μm or more and 4 μm or less, 4 μm or more and 13 μm or less, 4 μm or more and 12 μm or less, or 4 μm or more and 10 μm or less. Often, it may be 4 μm or more and 9 μm or less, 4 μm or more and 7 μm or less, 4 μm or more and 6 μm or less, 6 μm or more and 13 μm or less, or 6 μm or more and 12 μm or less. Often, it may be 6 μm or more and 10 μm or less, 6 μm or more and 9 μm or less, 6 μm or more and 7 μm or less, 7 μm or more and 13 μm or less, or 7 μm or more and 12 μm or less. Often, it may be 7 μm or more and 10 μm or less, 7 μm or more and 9 μm or less, 9 μm or more and 13 μm or less, 9 μm or more and 12 μm or less, or 9 μm or more and 10 μm or less. Generally, the thickness may be 10 μm or more and 13 μm or less, 10 μm or more and 12 μm or less, or 12 μm or more and 13 μm or less.

The second surface 21b of the first metal layer 21 may be a polished surface as described later. In this case, the surface roughness of the second surface 21b of the first metal layer 21 is smaller than the surface roughness of the first surface 21a.

The surface roughness of the first surface 21a and the surface roughness of the second surface 21b may be expressed by the arithmetic mean roughness Ra defined in JIS B0601-2001. A scanning white interferometer VertScan manufactured by Ryoka System Co., Ltd. may be used to measure Ra. The surface roughness of the first surface 21a and the surface roughness of the second surface 21b measured using this measuring device are described below.

The surface roughness Ra1 of the first surface 21a may be, for example, 0.1 μm or more, 0.2 μm or more, 0.3 μm or more, or 0.4 μm or more. Good too. By setting the surface roughness Ra1 to 0.1 μm or more, it is possible to prevent the first surface 21a from becoming difficult to separate from the deposition target substrate 91 after the deposition process. Further, the surface roughness Ra1 may be, for example, 0.7 μm or less, 0.8 μm or less, 0.9 μm or less, or 1.0 μm or less. By setting the surface roughness Ra1 to 1.0 μm or less, variations in the shape of the through holes 40 formed by etching can be reduced, and the shape accuracy and positional accuracy of the through holes 40 can be improved. The range of surface roughness Ra1 is a first group consisting of 0.1 μm, 0.2 μm, 0.3 μm and 0.4 μm, and/or a first group consisting of 0.7 μm, 0.8 μm, 0.9 μm and 1.0 μm. It may be determined by the second group. The range of surface roughness Ra1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of surface roughness Ra1 may be determined by a combination of any two of the values included in the first group described above. The range of surface roughness Ra1 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 0.1 μm or more and 1.0 μm or less, 0.1 μm or more and 0.9 μm or less, 0.1 μm or more and 0.8 μm or less, and 0.1 μm or more and 0.1 μm or more and 0.8 μm or less. It may be 7 μm or less, 0.1 μm or more and 0.4 μm or less, 0.1 μm or more and 0.3 μm or less, 0.1 μm or more and 0.2 μm or less, It may be 0.2 μm or more and 1.0 μm or less, 0.2 μm or more and 0.9 μm or less, 0.2 μm or more and 0.8 μm or less, and 0.2 μm or more and 0.7 μm or less. It may be 0.2 μm or more and 0.4 μm or less, 0.2 μm or more and 0.3 μm or less, 0.3 μm or more and 1.0 μm or less, and 0.2 μm or more and 0.3 μm or less, 0.3 μm or more and 1.0 μm or less, It may be 3 μm or more and 0.9 μm or less, 0.3 μm or more and 0.8 μm or less, 0.3 μm or more and 0.7 μm or less, and 0.3 μm or more and 0.4 μm or less. may be 0.4 μm or more and 1.0 μm or less, 0.4 μm or more and 0.9 μm or less, 0.4 μm or more and 0.8 μm or less, and 0.4 μm or more It may be 0.7 μm or less, 0.7 μm or more and 1.0 μm or less, 0.7 μm or more and 0.9 μm or less, or 0.7 μm or more and 0.8 μm or less. Often, it may be 0.8 μm or more and 1.0 μm or less, 0.8 μm or more and 0.9 μm or less, or 0.9 μm or more and 1.0 μm or less.

The surface roughness Ra2 of the second surface 21b may be, for example, 0.01 μm or more, 0.02 μm or more, 0.03 μm or more, or 0.04 μm or more. Good too. By setting the surface roughness Ra2 to 0.01 μm or more, the metal plate 52 described below can be efficiently polished. Further, the surface roughness Ra2 may be, for example, 0.07 μm or less, 0.08 μm or less, 0.09 μm or less, or 0.1 μm or less. By setting the surface roughness Ra2 to 0.1 μm or less, scattering of the exposure light L on the second surface 21b can be suppressed in the exposure process described later. The range of surface roughness Ra2 is a first group consisting of 0.01 μm, 0.02 μm, 0.03 μm and 0.04 μm, and/or a first group consisting of 0.07 μm, 0.08 μm, 0.09 μm and 0.1 μm. It may be determined by the second group. The range of surface roughness Ra2 may be determined by a combination of any one of the values included in the above-mentioned first group and any one of the values included in the above-mentioned second group. The range of surface roughness Ra2 may be determined by a combination of any two of the values included in the first group described above. The range of surface roughness Ra2 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 0.01 μm or more and 0.1 μm or less, 0.01 μm or more and 0.09 μm or less, 0.01 μm or more and 0.08 μm or less, and 0.01 μm or more and 0.01 μm or more and 0.08 μm or less. 0.07 μm or less, 0.01 μm or more and 0.04 μm or less, 0.01 μm or more and 0.03 μm or less, 0.01 μm or more and 0.02 μm or less, It may be 0.02 μm or more and 0.1 μm or less, 0.02 μm or more and 0.09 μm or less, 0.02 μm or more and 0.08 μm or less, and 0.02 μm or more and 0.07 μm or less. 0.02 μm or more and 0.04 μm or less, 0.02 μm or more and 0.03 μm or less, 0.03 μm or more and 0.1 μm or less, and 0.02 μm or more and 0.04 μm or less, 0.03 μm or more and 0.1 μm or less, It may be 0.03 μm or more and 0.09 μm or less, 0.03 μm or more and 0.08 μm or less, 0.03 μm or more and 0.07 μm or less, and 0.03 μm or more and 0.04 μm or less. may be 0.04 μm or more and 0.1 μm or less, 0.04 μm or more and 0.09 μm or less, 0.04 μm or more and 0.08 μm or less, and 0.04 μm or more It may be 0.07 μm or less, 0.07 μm or more and 0.1 μm or less, 0.07 μm or more and 0.09 μm or less, or 0.07 μm or more and 0.08 μm or less. Often, it may be 0.08 μm or more and 0.1 μm or less, 0.08 μm or more and 0.09 μm or less, or 0.09 μm or more and 0.1 μm or less.

As described above, the first metal layer 21 may be provided with two or more through holes 40. The through hole 40 extends from the first surface 21 a to the second surface 21 b and penetrates the first metal layer 21 of the vapor deposition mask 20 . As shown in FIG. 5, the opening in the second surface 21b of the through hole 40 may be larger than the opening in the first surface 21a. In one embodiment, the cross-sectional opening of the through hole 40 along the first surface 21a may gradually become larger from the first surface 21a toward the second surface 21b. In other words, the cross-sectional area of each through hole 40 in the cross section along the first surface 21a at each position along the normal direction of the vapor deposition mask 20 gradually increases from the first surface 21a to the second surface 21b. It may be. In this case, the through hole 40 may have a wall surface 41 formed so as to move away from the central axis CL of the through hole 40 (see FIG. 5) from the first surface 21a toward the second surface 21b. For example, when forming the through hole 40 by etching, the wall surface 41 of the through hole 40 may be formed in a curved shape as shown in FIG. The through hole 40 shown in FIG. 5 is curved so that the wall surface 41 of the through hole 40 bulges outward. Even in this case, the cross-sectional opening of the through hole 40 in the direction along the first surface 21a may gradually become larger from the first surface 21a toward the second surface 21b. In addition, in FIG. 4, in order to simplify the drawing, an example is shown in which the wall surface 41 of the through hole 40 is formed in a straight line parallel to the central axis CL.

As shown in FIG. 6, the through holes 40 may form two or more through hole groups 30. Each through-hole group 30 is exposed in the frame opening 16 (see FIGS. 2 and 3) of the frame 15 described above. That is, the frame opening 16 may expose the plurality of through hole groups 30. Furthermore, all the through-hole groups 30 formed in the first metal layer 21 may be exposed through one frame opening 16. As shown in FIG. 6, each through-hole group 30 may be configured such that two or more through-holes 40 form a group. The term "through-hole group 30" is used to mean an aggregate of a plurality of regularly arranged through-holes 40. The outer edge through-hole 40 constituting one through-hole group 30 is the outermost through-hole 40 among the plurality of through-holes 40 that are similarly regularly arranged. There may not be any through holes 40 that are similarly regularly arranged and intended for the passage of the vapor deposition material 82 on the outside of the through holes 40 at the outer edge. The through holes 40 through which the vapor deposition material 82 is intended to pass may not be formed between the adjacent through hole groups 30 . However, through holes or recesses (none of which are shown) for other purposes may be formed between adjacent through hole groups 30. These through-holes and recesses for other purposes may be formed without the regularity of the arrangement of the through-holes 40, and may be considered not to belong to the through-hole group 30.

As shown in FIG. 6, the plurality of through-hole groups 30 may be arranged at predetermined intervals (at a predetermined pitch). The through-hole groups 30 are arranged at predetermined intervals (code C1 shown in FIG. 6) in the first direction D11, and are arranged at predetermined intervals (code C2 shown in FIG. 6) in the second direction D12. may have been done. The arrangement pitches C1 and C2 of the through-hole group 30 may be different in the first direction D11 and the second direction D12, but may be the same. FIG. 6 shows an example in which the arrangement pitch C1 in the first direction D11 is equal to the arrangement pitch C2 in the second direction D12. As shown in FIG. 6, the through-hole groups 30 may be arranged in parallel. That is, each through-hole group 30 constituting one row along the first direction D11 and each through-hole group 30 constituting another row adjacent to that row in the second direction D12 are arranged in the second direction D12. may be arranged in .

The arrangement pitches C1 and C2 of the through-hole group 30 may be, for example, 5 mm or more, 15 mm or more, 25 mm or more, or 35 mm or more. By setting the arrangement pitches C1 and C2 to 5 mm or more, it can be applied to small displays such as VR glasses and electronic viewfinders of digital cameras. Further, the arrangement pitches C1 and C2 may be, for example, 70 mm or less, 80 mm or less, 90 mm or less, or 100 mm or less. By setting the arrangement pitches C1 and C2 to 100 mm or less, the strength when tensioning the frame 15 can be increased. The range of the array pitches C1 and C2 may be defined by a first group consisting of 5 mm, 15 mm, 25 mm and 35 mm, and/or a second group consisting of 70 mm, 80 mm, 90 mm and 100 mm. The range of the array pitches C1 and C2 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. . The range of the array pitches C1 and C2 may be determined by a combination of any two of the values included in the first group described above. The range of the arrangement pitches C1 and C2 may be determined by a combination of any two of the values included in the above-mentioned second group. For example, it may be 5 mm or more and 100 mm or less, 5 mm or more and 90 mm or less, 5 mm or more and 80 mm or less, 5 mm or more and 70 mm or less, or 5 mm or more and 35 mm or less. Generally, the length may be 5 mm or more and 25 mm or less, 5 mm or more and 15 mm or less, 15 mm or more and 100 mm or less, 15 mm or more and 90 mm or less, or 15 mm or more and 80 mm or less. Generally, the length may be 15 mm or more and 70 mm or less, 15 mm or more and 35 mm or less, 15 mm or more and 25 mm or less, 25 mm or more and 100 mm or less, or 25 mm or more and 90 mm or less. Generally, the length may be 25 mm or more and 80 mm or less, 25 mm or more and 70 mm or less, 25 mm or more and 35 mm or less, 35 mm or more and 100 mm or less, or 35 mm or more and 90 mm or less. Generally, the length may be 35 mm or more and 80 mm or less, 35 mm or more and 70 mm or less, 70 mm or more and 100 mm or less, 70 mm or more and 90 mm or less, or 70 mm or more and 80 mm or less. Generally, the length may be 80 mm or more and 100 mm or less, 80 mm or more and 90 mm or less, or 90 mm or more and 100 mm or less.

As shown in FIG. 7A, in one through-hole group 30, the plurality of through-holes 40 may be arranged at predetermined intervals (at a predetermined pitch). The through-holes 40 are arranged at predetermined intervals (code C3 shown in FIG. 7A) in the first direction D11, and are arranged at predetermined intervals (code C4 shown in FIG. 7A) in the second direction D12. You can leave it there. The arrangement pitches C3 and C4 of the through holes 40 may be different in the first direction D11 and the second direction D12, but may be the same. FIG. 7A shows an example in which the arrangement pitch C3 in the first direction D11 is equal to the arrangement pitch C4 in the second direction D12. As shown in FIG. 7A, the through holes 40 may be arranged in parallel. That is, each through hole 40 that constitutes one row along the first direction D11 and each through hole 40 that constitutes another row that is adjacent to that row in the second direction D12 are aligned in the second direction D12. may have been done. The arrangement pitches C3 and C4 of the through holes 40 may be determined as follows, for example, depending on the pixel density of the display device or the projection device.
・When the pixel density is 600 ppi or more: The pitch is 42.3 μm or less ・When the pixel density is 1200 ppi or more: The pitch is 21.2 μm or less ・If the pixel density is 3000 ppi or more: The pitch is 8.5 μm or less When the pixel density is 600 ppi The display device or projection device may be used, for example, as an organic EL display device for a smartphone. A display device or a projection device with a pixel density of 1200 ppi may be used, for example, to display or project images and videos for expressing virtual reality (so-called VR). A display device or a projection device with a pixel density of 3000 ppi may be used, for example, to display or project images and videos for expressing augmented reality (so-called AR).

Note that the through holes 40 in one through hole group 30 may not be arranged in parallel but may be arranged in a staggered manner as shown in FIG. 7B. That is, each through hole 40 that constitutes one row along the first direction D11 and each through hole 40 that constitutes another row that is adjacent to that row in the second direction D12 are aligned in the second direction D12. It doesn't have to be done. In the example shown in FIG. 7B, each through hole 40 constituting one row and the through holes 40 constituting another adjacent row are arranged with a deviation in the first direction D11, and the amount of deviation is This is half the arrangement pitch C3 in the first direction.

As shown in FIG. 7A, the through hole 40 may have a substantially rectangular outline in plan view. In this case, the four corners of the outline of the through hole 40 may be curved. Note that the shape of the outline can be arbitrarily determined depending on the shape of the pixel. For example, it may have another polygonal shape such as a hexagon or an octagon, or it may have a circular shape. Moreover, the shape of the outline may be a combination of a plurality of shapes. Furthermore, the through holes 40 may each have different contour shapes. When the through hole 40 has a polygonal outline, the opening size of the through hole 40 may be the distance between a pair of opposing sides of the polygon, as shown in FIG. 7A.

In FIGS. 5 and 7A, the opening size of the through hole 40 on the first surface 21a of the vapor deposition mask 20 is indicated by the symbol S1. Further, the opening size of the through hole 40 on the second surface 21b of the vapor deposition mask 20 is indicated by the symbol S2. Moreover, the code|symbol S3 has shown the distance between mutually adjacent through-hole 40 comrades in the 1st surface 21a. In FIG. 7A, since the planar shape of the through hole 40 is square, the opening size of the through hole 40 in the first direction D11 and the opening size of the through hole 40 in the second direction D12 are equal. The dimensions of the through hole 40 at D12 are typically indicated by symbols S1 and S2.

The dimensions S1, S2, and S3 are determined, for example, as shown in Table 1 below, depending on the pixel density of the display device or projection device.

In FIG. 5, the symbol L1 indicates the intersection of the second surface 21b and the wall surface 41 of the through hole 40 in a cross-sectional view of the through hole 40 (when viewed in a cross section along the thickness direction D2 of the first metal layer 21). represents a virtual straight line passing through the intersection of the first surface 21a and the wall surface 41 of the through hole 40. The symbol θ1 represents the angle between the direction in which the straight line L1 extends and the surface direction D1 of the first surface 21a of the first metal layer 21.

The technical meaning of the angle θ1 will be explained below. In the evaporation process of depositing the evaporation material 82 onto the substrate 91 using the evaporation mask 20, depending on the configuration of the crucible 81 shown in FIG. In addition to components that fly along the thickness direction D2 of the vapor deposition mask 20, there may also be components that fly along the direction oblique to the thickness direction D2 of the vapor deposition mask 20. In this case, a part of the vapor deposition material 82 flying along the inclined direction reaches the second surface 21b of the first metal layer 21 of the vapor deposition mask 20 and the wall surface of the through hole 40 before reaching the substrate 91 to be vapor deposited. and adhere. For this reason, the thickness of the vapor deposition layer 92 formed on the vapor deposition target substrate 91 tends to become thinner as it approaches the wall surface of the through hole 40 . This phenomenon in which the adhesion of the evaporation material 82 to the evaporation target substrate 91 is inhibited by the wall surface of the through hole 40 is also referred to as a shadow. Possible measures to suppress the occurrence of shadows include reducing the above-mentioned angle θ1 and reducing the thickness H1 of the first metal layer 21 of the vapor deposition mask 20.

Reducing the angle θ1 means that the opening of the through hole 40 on the second surface 21b of the first metal layer 21 becomes larger. In this case, the wall surfaces of the through holes 40 adjacent to each other on the second surface 21b are connected, and the second surface 21b no longer exists between these through holes 40. That is, the portions between adjacent through holes 40 on the second surface 21b are etched away by the etching process described below. Therefore, in order to ensure the mechanical strength of the vapor deposition mask 20, it is preferable not to make the angle θ1 too small. In this case, it becomes possible to reduce the arrangement pitches C3 and C4 of the through holes 40.

When the angle θ1 is not made too small, it is preferable to make the thickness H1 of the first metal layer 21 of the vapor deposition mask 20 small in order to suppress the occurrence of shadows. Therefore, the thickness H1 may be made small to the extent that the mechanical strength of the vapor deposition mask 20 can be ensured. That is, by reducing the thickness H1 of the first metal layer 21, the angle θ1 can be increased. In this case, the arrangement pitches C3 and C4 of the through holes 40 can be reduced.

By the way, one through hole group 30 may be referred to as one effective area 23. The area located around the effective area 23 may be referred to as a surrounding area 24. In this case, the surrounding area 24 surrounds the plurality of effective areas 23.

When manufacturing a display device such as an organic EL display device using the vapor deposition mask 20, one effective area 23 corresponds to the display area of one organic EL display device. Therefore, according to the vapor deposition mask 20 shown in FIG. 2, multi-sided vapor deposition of an organic EL display device is possible. Note that one effective area 23 may correspond to multiple display areas.

For example, as shown in FIG. 6, the effective area 23 may have a substantially rectangular outline in plan view. The outline of the effective area 23 may be defined by a line that contacts the outermost through hole 40 of the corresponding through hole group 30 from the outside. More specifically, the outline of the effective area 23 may be defined by a line tangent to the opening of the through hole 40. In the example shown in FIG. 6, since the through holes 40 are arranged in parallel, the effective area 23 has a substantially rectangular outline. Although not shown, each effective area 23 can have various contours depending on the shape of the display area of the organic EL display device. For example, each effective area 23 may have a circular outline.

As shown in FIG. 4, the second metal layer 22 of the vapor deposition mask 20 may extend outside the first metal layer 21. Further, the second metal layer 22 may extend outward from the frame 15 described above (see FIGS. 2 and 3). Here, "extending outward" means the side opposite to the side toward the center of the first metal layer 21 and the side toward the periphery of the first metal layer 21 from the center in plan view. do. The second metal layer 22 may have a first surface 22a and a second surface 22b located on the opposite side to the first surface 22a. The first surface 22a may be a surface on the first metal layer 21 side. The second surface 22b may be the surface on the side of the frame 15 described above.

In this embodiment, the second metal layer 22 may have a frame shape in plan view. Further, the second metal layer 22 may have a metal layer opening 25 that overlaps the through hole 40 provided in the first metal layer 21 and exposes the through hole 40 in plan view. The metal layer opening 25 extends from the first surface 22a to the second surface 22b and penetrates the second metal layer 22.

The thickness H2 of the second metal layer 22 of the vapor deposition mask 20 may be thicker than the thickness H1 of the first metal layer 21.

The thickness H2 of the second metal layer 22 may be, for example, 10 μm or more, 15 μm or more, 20 μm or more, or 25 μm or more. By setting the thickness H2 to 10 μm or more, the second metal layer 22 can be held by a clamp P, which will be described later. Further, the thickness H2 may be, for example, 35 μm or less, 40 μm or less, 45 μm or less, or 50 μm or less. By setting the thickness H2 to 50 μm or less, the second metal layer 22 can be easily welded and fixed to the frame 15. The range of thickness H2 may be defined by a first group consisting of 10 μm, 15 μm, 20 μm and 25 μm, and/or a second group consisting of 35 μm, 40 μm, 45 μm and 50 μm. The range of the thickness H2 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the thickness H2 may be determined by a combination of any two of the values included in the first group described above. The range of thickness H2 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 10 μm or more and 50 μm or less, 10 μm or more and 45 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 35 μm or less, or 10 μm or more and 25 μm or less. Often, it may be 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 45 μm or less, or 15 μm or more and 40 μm or less. Often, it may be 15 μm or more and 35 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 50 μm or less, or 20 μm or more and 45 μm or less. Often, it may be 20 μm or more and 40 μm or less, 20 μm or more and 35 μm or less, 20 μm or more and 25 μm or less, 25 μm or more and 50 μm or less, or 25 μm or more and 45 μm or less. Often, it may be 25 μm or more and 40 μm or less, 25 μm or more and 35 μm or less, 35 μm or more and 50 μm or less, 35 μm or more and 45 μm or less, or 35 μm or more and 40 μm or less. Generally, the thickness may be 40 μm or more and 50 μm or less, 40 μm or more and 45 μm or less, or 45 μm or more and 50 μm or less.

The second metal layer 22 may be joined to the first metal layer 21 via the resin layer 60. The resin layer 60 may have a frame-like shape in plan view. In this case, the resin layer 60 may have a resin layer opening 61 similar to the metal layer opening 25 of the second metal layer 22 described above. The through hole 40 is exposed to the frame 15 side through the metal layer opening 25 and the resin layer opening 61. In addition, in FIGS. 2 to 4, the resin layer 60 does not extend outward from the first metal layer 21 (or does not protrude) in a plan view, and the outer edge of the resin layer 60 does not extend beyond the first metal layer 21. 21 is shown. However, the present invention is not limited to this, and the outer edge of the resin layer 60 may be located on the outer side than the outer edge of the first metal layer 21 or may be located on the inner side than the outer edge of the first metal layer 21. You may do so.

Any resin material can be used for the resin layer 60. For example, the resin layer 60 may be made of a resin material with a low coefficient of thermal expansion. For example, the resin layer 60 may contain polyimide. In this case, as the material constituting the resin layer 60, the resin layer 60 containing polyimide as a component can be formed by applying polyimide varnish to the first metal layer 21 and curing it, as will be described later. The second metal layer 22 may be permanently bonded to the resin layer 60 via an adhesive, for example.

The thickness H3 of the resin layer 60 is not particularly limited. The thickness H3 of the resin layer 60 may be, for example, 1 μm or more, 2 μm or more, 3 μm or more, or 4 μm or more. By setting the thickness H3 to 1 μm or more, it is possible to suppress the bonding between the resin layer 60 and the second metal layer 22 from being affected by the surface roughness of the second metal layer 22. Further, the thickness H3 may be, for example, 7 μm or less, 8 μm or less, 9 μm or less, or 10 μm or less. By setting the thickness H3 to 10 μm or less, it is possible to reduce the influence of stress due to volume change of the adhesive during curing. The range of thickness H3 may be defined by a first group consisting of 1 μm, 2 μm, 3 μm and 4 μm, and/or a second group consisting of 7 μm, 8 μm, 9 μm and 10 μm. The range of the thickness H3 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of thickness H3 may be determined by a combination of any two of the values included in the first group described above. The range of thickness H3 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 1 μm or more and 10 μm or less, 1 μm or more and 9 μm or less, 1 μm or more and 8 μm or less, 1 μm or more and 7 μm or less, and 1 μm or more and 4 μm or less. Often, it may be 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 9 μm or less, or 2 μm or more and 8 μm or less. Often, it may be 2 μm or more and 7 μm or less, 2 μm or more and 4 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 10 μm or less, or 3 μm or more and 9 μm or less. Often, it may be 3 μm or more and 8 μm or less, 3 μm or more and 7 μm or less, 3 μm or more and 4 μm or less, 4 μm or more and 10 μm or less, or 4 μm or more and 9 μm or less. Often, it may be 4 μm or more and 8 μm or less, 4 μm or more and 7 μm or less, 7 μm or more and 10 μm or less, 7 μm or more and 9 μm or less, or 7 μm or more and 8 μm or less. It may be 8 μm or more and 10 μm or less, 8 μm or more and 9 μm or less, or 9 μm or more and 10 μm or less.

As a material constituting the vapor deposition mask 20 including the first metal layer 21 and the second metal layer 22, for example, an iron alloy containing nickel can be used. The iron alloy may further contain cobalt in addition to nickel. For example, as a material for the vapor deposition mask 20, an iron alloy having a total content of nickel and cobalt of 30 mass% or more and 54 mass% or less, and a cobalt content of 0 mass% or more and 6 mass% or less is used. Can be used. Specific examples of iron alloys containing nickel include Invar materials containing 34% by mass or more and 38% by mass or less of nickel, low thermal expansion Fe-Ni plating alloys containing 38% by mass or more and 54% by mass or less of nickel, etc. can be mentioned. Specific examples of iron alloys containing nickel and cobalt include super invar materials containing cobalt in addition to 30% by mass and 34% by mass of nickel. By using such an iron alloy, the thermal expansion coefficient of the vapor deposition mask 20 can be lowered. For example, when a glass substrate is used as the deposition target substrate 91, the thermal expansion coefficient of the deposition mask 20 can be set to a low value equivalent to that of the glass substrate. As a result, during the vapor deposition process, the shape accuracy and positional accuracy of the vapor deposition layer 92 formed on the vapor deposition target substrate 91 are reduced due to the difference in thermal expansion coefficient between the vapor deposition mask 20 and the vapor deposition target substrate 91. This can be suppressed. The first metal layer 21 and the second metal layer 22 may be made of different materials.

Next, a method for manufacturing the vapor deposition mask 20 having such a configuration will be described with reference to FIGS. 8 to 17.

The method for manufacturing the vapor deposition mask 20 according to the present embodiment includes a preparation step of preparing a metal plate 52 that is separably attached to a supporting substrate 50 via a bonding layer 51, and a first step of reducing the thickness of the metal plate 52. The step of reducing the thickness of the metal layer 21, forming the through hole 40 in the first metal layer 21, and separating the deposition mask 20 from the support substrate 50 may be included. Below, an example will be described in which the vapor deposition mask 20 is manufactured from a long metal plate 52 by a roll-to-roll process. However, it is also possible to produce the vapor deposition mask 20 using a sheet metal plate. In addition, in FIGS. 13 to 17, the number of through holes 40 is smaller than in FIG. 4 in order to make the drawings clearer.

First, as shown in FIG. 8, as a preparation step, a metal plate 52 attached to a support substrate 50 via a bonding layer 51 may be prepared. For example, the support substrate 50, the bonding layer 51, and the metal plate 52 each unrolled from a roll are pressed when passing between a pair of rolls (not shown), so that the support substrate 50 and the metal plate 52 are bonded. The layer 51 may be attached.

The support substrate 50 may be a continuous resin plate unwound from a roll. The material constituting the support substrate 50 is not particularly limited. For example, when producing the vapor deposition mask 20 by a roll-to-roll process, a flexible resin material may be used. Examples of such resin materials include PET (polyethylene terephthalate) and polyimide. Moreover, when producing the vapor deposition mask 20 by a single-wafer process, materials such as glass and silicon may be used.

The thickness H4 of the support substrate 50 may be, for example, 20 μm or more, 30 μm or more, 40 μm or more, or 50 μm or more. By setting the thickness H4 to 20 μm or more, the strength of the support substrate 50 can be ensured. Further, the thickness H4 may be, for example, 0.1 mm or less, 0.5 mm or less, 1 mm or less, or 5 mm or less. By setting the thickness H4 to 5 mm or less, handling properties during manufacturing can be ensured. By setting the thickness H4 to 1 mm or less, a roll-to-roll method can be applied. The range of thickness H4 may be defined by a first group consisting of 20 μm, 30 μm, 40 μm and 50 μm, and/or a second group consisting of 0.1 mm, 0.5 mm, 1 mm and 5 mm. The range of the thickness H4 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the thickness H4 may be determined by a combination of any two of the values included in the first group described above. The range of the thickness H4 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 20 μm or more and 5 mm or less, 20 μm or more and 1 mm or less, 20 μm or more and 0.5 mm or less, 20 μm or more and 0.1 mm or less, and 20 μm or more and 50 μm or less. may be 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 30 μm or more and 5 mm or less, 30 μm or more and 1 mm or less, and 30 μm or more and 0. It may be 5 mm or less, 30 μm or more and 0.1 mm or less, 30 μm or more and 50 μm or less, 30 μm or more and 40 μm or less, 40 μm or more and 5 mm or less, It may be 40 μm or more and 1 mm or less, 40 μm or more and 0.5 mm or less, 40 μm or more and 0.1 mm or less, 40 μm or more and 50 μm or less, and 50 μm or more and 5 mm or less. may be 50 μm or more and 1 mm or less, 50 μm or more and 0.5 mm or less, 50 μm or more and 0.1 mm or less, or 0.1 mm or more and 5 mm or less, It may be 0.1 mm or more and 1 mm or less, 0.1 mm or more and 0.5 mm or less, 0.5 mm or more and 5 mm or less, or 0.5 mm or more and 1 mm or less, The length may be 1 mm or more and 5 mm or less.

The bonding layer 51 may be a continuous adhesive sheet unwound from a roll. As the material constituting the bonding layer 51, a material that can lose its adhesive properties when heated may be used. For example, as a material constituting such a bonding layer 51, a material that foams and becomes peelable when heated may be used. For example, a release sheet "Riva Alpha (registered trademark)" manufactured by Nitto Denko Corporation may be used. Alternatively, as the material constituting the bonding layer 51, a material that can lose its adhesive properties by being irradiated with ultraviolet light (UV light) may be used. For example, a photocurable resin may be used as a material constituting the bonding layer 51. More specifically, as the material constituting the bonding layer 51, acrylic photocurable resin or the like may be used.

The thickness H5 of the bonding layer 51 may be, for example, 1 μm or more, 2 μm or more, 3 μm or more, or 4 μm or more. By setting the thickness H5 to 1 μm or more, it is possible to suppress the formation of a gap between the support substrate 50 and the metal plate 52 even if the support substrate 50 or the metal plate 52 has irregularities of 1 μm or less. Further, the thickness H5 may be, for example, 7 μm or less, 8 μm or less, 9 μm or less, or 10 μm or less. By setting the thickness H5 to 10 μm or less, it is possible to suppress warping of the support substrate 50, the bonding layer 51, and the metal plate 52 due to thermal stress. The range of thickness H5 may be defined by a first group consisting of 1 μm, 2 μm, 3 μm and 4 μm, and/or a second group consisting of 7 μm, 8 μm, 9 μm and 10 μm. The range of thickness H5 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of thickness H5 may be determined by a combination of any two of the values included in the first group described above. The range of the thickness H5 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 1 μm or more and 10 μm or less, 1 μm or more and 9 μm or less, 1 μm or more and 8 μm or less, 1 μm or more and 7 μm or less, and 1 μm or more and 4 μm or less. Often, it may be 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 9 μm or less, or 2 μm or more and 8 μm or less. Often, it may be 2 μm or more and 7 μm or less, 2 μm or more and 4 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 10 μm or less, or 3 μm or more and 9 μm or less. Often, it may be 3 μm or more and 8 μm or less, 3 μm or more and 7 μm or less, 3 μm or more and 4 μm or less, 4 μm or more and 10 μm or less, or 4 μm or more and 9 μm or less. Often, it may be 4 μm or more and 8 μm or less, 4 μm or more and 7 μm or less, 7 μm or more and 10 μm or less, 7 μm or more and 9 μm or less, or 7 μm or more and 8 μm or less. It may be 8 μm or more and 10 μm or less, 8 μm or more and 9 μm or less, or 9 μm or more and 10 μm or less.

The metal plate 52 may be a continuous metal plate unwound from a roll. The metal plate 52 may be made as a rolled material. The metal plate 52 may be made of the same material as the first metal layer 21 . The metal plate 52 here has a first metal plate surface 52a and a second metal plate surface 52b located on the opposite side to the first metal plate surface 52a. The first metal plate surface 52a is a surface corresponding to the above-described first surface 21a of the first metal layer 21. The second metal plate surface 52b may be a surface that is shaved in a thickness reduction process described later. In this case, the second metal plate surface 52b is a surface corresponding to the above-described second surface 21b of the first metal layer 21. becomes. When attaching the metal plate 52 to the support substrate 50, the first metal plate surface 52a of the metal plate 52 is placed on the bonding layer 51 side.

The thickness H6 (thickness before the thickness reduction step) of the metal plate 52 may be, for example, 15 μm or more, 18 μm or more, 20 μm or more, or 22 μm or more. . By setting the thickness H6 to 15 μm or more, availability can be ensured. Further, the thickness H6 may be, for example, 23 μm or less, 25 μm or less, 28 μm or less, or 30 μm or less. By setting the thickness H6 to 30 μm or less, it is possible to suppress an increase in the processing time of the thickness reduction step. The range of thickness H6 may be defined by a first group consisting of 15 μm, 18 μm, 20 μm and 22 μm, and/or a second group consisting of 23 μm, 25 μm, 28 μm and 30 μm. The range of thickness H6 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of thickness H6 may be determined by a combination of any two of the values included in the first group described above. The range of the thickness H6 may be determined by a combination of any two of the values included in the second group described above. For example, it may be 15 μm or more and 30 μm or less, 15 μm or more and 28 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 23 μm or less, or 15 μm or more and 22 μm or less. Often, it may be 15 μm or more and 20 μm or less, 15 μm or more and 18 μm or less, 18 μm or more and 30 μm or less, 18 μm or more and 28 μm or less, or 18 μm or more and 25 μm or less. Often, it may be 18 μm or more and 23 μm or less, 18 μm or more and 22 μm or less, 18 μm or more and 20 μm or less, 20 μm or more and 30 μm or less, or 20 μm or more and 28 μm or less. Often, it may be 20 μm or more and 25 μm or less, 20 μm or more and 23 μm or less, 20 μm or more and 22 μm or less, 22 μm or more and 30 μm or less, or 22 μm or more and 28 μm or less. Often, it may be 22 μm or more and 25 μm or less, 22 μm or more and 23 μm or less, 23 μm or more and 30 μm or less, 23 μm or more and 28 μm or less, or 23 μm or more and 25 μm or less. Generally, the thickness may be 25 μm or more and 30 μm or less, 25 μm or more and 28 μm or less, or 28 μm or more and 30 μm or less.

After the preparation step, the thickness of the metal plate 52 may be reduced to obtain the first metal layer 21 in a thickness reduction step. In the thickness reduction process according to this embodiment, the first etching process and the polishing process may be performed in this order.

In the first etching step, as shown in FIG. 9, the second metal plate surface 52b (the surface opposite to the support substrate 50) of the metal plate 52 is etched, and the thickness of the metal plate 52 is reduced. For example, the entire second metal plate surface 52b of the metal plate 52 may be etched without forming a resist layer on the second metal plate surface 52b. The etching process in the first etching step may be a wet etching process. In this case, for example, an etching solution containing a ferric chloride solution and hydrochloric acid may be used. In this way, the second metal plate surface 52b' of the metal plate 52 is obtained after the first etching step.

In the polishing step, as shown in FIG. 10, the etched second metal plate surface 52b' of the metal plate 52 is polished to further reduce the thickness of the metal plate 52. The second metal plate surface 52b' of the metal plate 52 may be polished by, for example, mechanical polishing used in a semiconductor planarization process, chemical mechanical polishing, or the like. In this case, the depth of polishing can be made uniform, and the thickness of the metal plate 52 after the polishing process can be made uniform. In this way, the first metal layer 21 having the second surface 21b is obtained from the metal plate 52 after the polishing process. The surface roughness of this second surface 21b is lower than that of the second metal plate surface 52b'. For example, the surface roughness of the second surface 21b obtained after the polishing step may be within the numerical range of the desired surface roughness described above.

Note that the ratio between the amount of thickness reduction of the metal plate 52 in the first etching step and the amount of thickness reduction of the metal plate 52 in the polishing step is arbitrary. The amount of thickness reduction of the metal plate 52 in the first etching step may be greater than the amount of thickness reduction of the metal plate 52 in the polishing step.

After the thickness reduction step, the through hole 40 may be formed as a through hole forming step. In the through hole forming step according to the present embodiment, the resist layer forming step, the exposure step, the developing step, the second etching step, and the resist layer removing step may be performed in this order.

In the resist layer forming step, as shown in FIG. 11, a dry film is attached to the polished second surface 21b (the surface opposite to the support substrate 50, the upper surface in FIG. 11) of the first metal layer 21. As a result, a resist layer 53 is formed. Here, an example in which a negative resist is used will be described. Examples of negative resists include resists containing an acrylic photocurable resin, such as RY331 manufactured by Hitachi Chemical. Note that a positive resist may be used as the resist layer 53. Further, as the resist layer 53, a film obtained by applying a liquid resist to the second surface 21b of the first metal layer 21 and curing it may be used.

In the exposure process, the resist layer 53 is exposed in a pattern, as shown in FIG. For example, first, an exposure mask 54 having exposure openings 54a arranged in a pattern so as not to irradiate exposure light L to portions of the resist layer 53 corresponding to the resist openings 53a is placed on the resist layer 53. Thereafter, the resist layer 53 is irradiated with exposure light L through the exposure opening 54a of the exposure mask 54, and the resist layer 53 is exposed in a pattern.

In the developing step, the exposed resist layer 53 is developed, as shown in FIG. As a result, the unexposed portion of the resist layer 53 is removed, forming a resist opening 53a. After development, the resist layer 53 may be heated to improve the adhesion of the resist layer 53 to the first metal layer 21.

In the second etching step, as shown in FIG. 14, the first metal layer 21 is etched from the second surface 21b through the resist opening 53a to form through holes forming the through hole group 30 in the first metal layer 21. 40 is formed. The etching process of the first metal layer 21 may be a wet etching process similarly to the first etching process. In this case, for example, an etching solution containing a ferric chloride solution and hydrochloric acid may be used.

In the resist layer removal step, as shown in FIG. 15, the resist layer 53 is removed. For example, the resist layer 53 may be stripped from the first metal layer 21 by using an alkaline stripping solution.

In this way, the through holes 40 formed in the first metal layer 21 are obtained.

After the through-hole forming step, the continuous first metal layer 21 may be cut into sheets as a cutting step.

After the cutting process, as an attachment process, the second metal layer 22 is attached to the first metal layer 21, as shown in FIG. In the attaching step according to the present embodiment, the resin layer forming step and the second metal layer attaching step may be performed in this order.

In the resin layer forming step, first, a resin material such as polyimide varnish is applied to a portion of the second surface 21b of the first metal layer 21 to which the second metal layer 22 is attached (a portion on the outer peripheral side of the second surface 21b). is applied. Subsequently, the applied resin material is dried. As a result, a resin layer 60 made of hardened resin material is formed as shown in FIG. 16.

In the second metal layer attaching step, an adhesive is first applied to the surface of the resin layer 60 opposite to the first metal layer 21 . Subsequently, the second metal layer 22 having the metal layer opening 25 is attached to the resin layer 60. At this time, the second metal layer 22 is attached to the resin layer 60 via an adhesive such that the inner peripheral side portion of the second metal layer 22 overlaps the resin layer 60. Note that the second metal layer 22 may be a metal plate produced as a rolled material. In this case, the second metal layer 22 may be obtained in the form of a sheet in which the metal layer openings 25 are formed in advance by etching this metal plate. Alternatively, the second metal layer 22 may be formed by plating.

In this way, the vapor deposition mask 20 according to this embodiment is obtained.

After the attachment process, as a separation process, the vapor deposition mask 20 (or the first metal layer 21) may be separated from the support substrate 50 and the bonding layer 51, as shown in FIG. For example, if the bonding layer 51 is made of a material that can lose its adhesive properties when heated, the bonding layer 51 is heated via the vapor deposition mask 20 or the support substrate 50. This allows the vapor deposition mask 20 to be easily peeled off from the support substrate 50 and the bonding layer 51. Furthermore, when the bonding layer 51 is made of a material that can lose its adhesive properties when irradiated with ultraviolet rays, the bonding layer 51 is irradiated with ultraviolet rays through the support substrate 50 . This allows the vapor deposition mask 20 to be easily peeled off from the support substrate 50 and the bonding layer 51. In this case, the support substrate 50 may be made of a material that can transmit ultraviolet rays.

In this way, a vapor deposition mask 20 according to this embodiment as shown in FIG. 4 is obtained.

Next, a method for manufacturing the vapor deposition mask device 10 using the vapor deposition mask 20 obtained as described above will be described.

In this case, as shown in FIG. 18, the vapor deposition mask 20 is stretched over the frame 15. More specifically, tension is applied to the vapor deposition mask 20, and a portion of the second metal layer 22 of the vapor deposition mask 20 outside the first metal layer 21 is fixed to the frame 15 while the tension is applied. The second metal layer 22 may be fixed to the frame 15 by spot welding, for example, and welding marks 19 as shown in FIGS. 3 and 4 may be formed.

When tensioning the vapor deposition mask 20 on the frame 15, tension may be applied to the vapor deposition mask 20 in a desired direction. For example, as shown in FIGS. 18 and 19, tension may be applied to the vapor deposition mask 20 in the first direction D11.

More specifically, as shown in FIG. 19, clamps P grip portions of the second metal layer 22 of the vapor deposition mask 20 on both sides in the first direction D11. In this case, the second metal layer 22 is held by clamps P on both sides of the center point of the vapor deposition mask 20.

At the time of tensioning, the tension applied by each clamp P to the vapor deposition mask 20 is adjusted so that each through hole 40 is positioned within an allowable range with respect to a desired position (evaporation target position). This can suppress the first metal layer 21 from being bent due to tension being applied to the vapor deposition mask 20 in the direction along the first direction D11. Furthermore, by individually adjusting the tension applied to the vapor deposition mask 20 from each clamp P, the position of each through hole 40 can be locally adjusted, and each through hole 40 can be positioned within an allowable range. can.

Next, a method for manufacturing a deposition substrate using the deposition mask device 10 according to this embodiment will be described with reference to FIGS. 1 and 20.

A method for manufacturing a vapor deposition substrate is to apply a vapor deposition material 82 to a substrate to be vapor deposited 91 using a vapor deposition mask device 10 to form a vapor deposition layer 92, thereby obtaining a vapor deposition substrate 90 as shown in FIG. The evaporation substrate 90 is mainly composed of a evaporation target substrate 91 and a evaporation layer 92 formed on the evaporation target substrate 91, and is used in an organic EL display device or the like. The method for manufacturing a vapor deposition substrate according to this embodiment may include a vapor deposition mask device preparation process, a close contact process, and a vapor deposition process.

First, as a vapor deposition mask device preparation step, the above-described vapor deposition mask device 10 may be prepared.

After the vapor deposition mask preparation process, the first surface 21a of the vapor deposition mask 20 of the vapor deposition mask device 10 may be brought into close contact with the deposition target substrate 91 as a close contact process. More specifically, first, the evaporation mask 20 is placed in the evaporation apparatus 80 together with the evaporation target substrate 91 so as to face the evaporation target substrate 91 . At this time, the deposition target substrate 91 may be interposed between the deposition mask 20 and the magnet 85, and the deposition mask 20 may be drawn to the deposition target substrate 91 by the magnetic force of the magnet 85. This allows the deposition target substrate 91 to be in close contact with the first surface 21 a of the deposition mask 20 .

After the adhesion step, as a vapor deposition step, the vapor deposition material 82 may be vapor-deposited onto the deposition target substrate 91 through the through-hole 40 of the vapor deposition mask 20 to form the vapor deposition layer 92 . By this, a vapor deposition substrate 90 is obtained. More specifically, the internal space of the vapor deposition apparatus 80 is made into a vacuum atmosphere, and the vapor deposition material 82 is evaporated and made to fly onto the substrate 91 to be vapor deposited. The flying deposition material 82 passes through each through hole 40 of the deposition mask 20, reaches the deposition target substrate 91, and adheres thereto. In this way, a vapor deposition substrate 90 is obtained that includes a vapor deposition layer 92 formed on a vapor deposition target substrate 91 in a pattern corresponding to the pattern of the through holes 40 .

As described above, in this embodiment, the through holes 40 are arranged in a predetermined pattern in each effective area 23. If it is desired to perform color display using a plurality of colors, vapor deposition masks 20 corresponding to each color are prepared, and vapor deposition materials 82 of each color are sequentially deposited on the substrate 91 to be vapor deposited using each vapor deposition mask 20. Thereby, for example, an organic luminescent material for red color, an organic luminescent material for green color, and an organic luminescent material for blue color can be deposited on one deposition target substrate 91, respectively.

In this way, a vapor deposition substrate 90 is obtained in which a vapor deposition layer 92 of each color is formed on a vapor deposition target substrate 91 .

As described above, according to the present embodiment, the thickness reduction step of reducing the thickness of the metal plate 52 to obtain the first metal layer 21 is performed, and then the through holes 40 are formed in the first metal layer 21. Thereby, the thickness of the first metal layer 21 can be easily reduced, and the occurrence of the above-mentioned shadow can be suppressed. Therefore, the thickness of the vapor deposition layer 92 formed on the substrate 91 to be vapor deposited can be equalized, and the shape accuracy and positional accuracy of the vapor deposition layer 92 can be improved. As a result, the definition of the vapor deposited layer 92 can be improved. In this case, it is also possible to achieve high definition of the vapor deposited layer 92.

Further, according to the present embodiment, as described above, since the thickness of the first metal layer 21 in which the through hole 40 is formed can be made thinner, the through hole 40 can be formed on one side of the first metal layer 21. Etching can be performed only from the second surface 21b (here, the second surface 21b), and etching from the other surface (here, the first surface 21a) can be made unnecessary. Therefore, the manufacturing process of the vapor deposition mask 20 can be simplified.

Further, according to the present embodiment, in the thickness reduction step of reducing the thickness of the metal plate 52 to obtain the first metal layer 21, the surface of the metal plate 52 opposite to the support substrate 50 is polished, and the metal plate 52 is polished. The thickness of 52 is reduced. Thereby, the thickness of the first metal layer 21 after polishing can be made uniform. Therefore, in the through-hole forming step performed after the thickness reduction step, the erosion effect due to the etching process can be made uniform, and the shape accuracy and positional accuracy of the through-hole 40 can be improved.

Moreover, according to this embodiment, since the second surface 22b of the first metal layer 21 obtained after the polishing process is polished, the surface roughness of the second surface 22b can be reduced. Thereby, the shape accuracy and positional accuracy of the through hole 40 can be improved. That is, by reducing the surface roughness, it is possible to suppress scattering of the exposure light L that has passed through the resist layer 53 and reached the second surface 22b of the first metal layer 21 when it is reflected. Therefore, the resist layer 53 can be irradiated with the exposure light L along the shape of the exposure opening 54a of the exposure mask 54, and the shape accuracy and positional accuracy of the resist opening 53a obtained after development can be improved. The first metal layer 21 can be etched through this resist opening 53a, and the shape accuracy and positional accuracy of the resulting through hole 40 can be improved. As a result, the definition of the through hole 40 can be improved.

Further, according to this embodiment, in the first etching step before the polishing step, the surface of the metal plate 52 opposite to the support substrate 50 is etched, and the thickness of the metal plate 52 is reduced. Thereby, the amount of reduction in the thickness of the metal plate 52 in the polishing process can be reduced, and the processing time of the thickness reduction process can be shortened. Therefore, the vapor deposition mask 20 can be manufactured efficiently. Further, it is possible to suppress limitations on the thickness of the metal plate 52 used for the first metal layer 21. That is, even if the thickness of the metal plate 52 is large, the thickness of the metal plate 52 can be reduced in the first etching process, thereby suppressing an increase in processing time in the process of reducing the thickness of the metal plate 52. be able to.

Further, according to the present embodiment, the second metal layer 22 is attached to the first metal layer 21 and has a metal layer opening 25 that overlaps the through hole 40 in a plan view and extends to the outside of the first metal layer 21 . Thereby, even if the first metal layer 21 is thin, the second metal layer 22 can ensure the rigidity of the vapor deposition mask 20. Therefore, the handling properties of the vapor deposition mask 20 can be improved. Further, since the second metal layer 22 can ensure the rigidity of the vapor deposition mask 20, it is possible to suppress the formation of wrinkles in the first metal layer 21 when the vapor deposition mask 20 is separated from the support substrate 50.

Further, according to this embodiment, the thickness of the second metal layer 22 attached to the first metal layer 21 is thicker than the thickness of the first metal layer 21. By this, when the vapor deposition mask 20 composed of the first metal layer 21 and the second metal layer 22 is stretched on the frame 15, the vapor deposition mask 20 is Of these, the second metal layer 22 can be gripped, and tension can be applied to the first metal layer 21. Therefore, the vapor deposition mask 20 can be stretched over the frame 15, and the positional accuracy of each through hole 40 can be improved. As a result, the definition of the through holes 40 in the vapor deposition mask device 10 can be improved.

Further, according to the present embodiment, the first metal layer 21 and the second metal layer 22 are each made of an iron alloy containing nickel. Thereby, the coefficient of thermal expansion of the first metal layer 21 and the coefficient of thermal expansion of the second metal layer 22 can be lowered. For example, when the deposition target substrate 91 is made of a glass substrate, the coefficient of thermal expansion of the first metal layer 21 and the coefficient of thermal expansion of the second metal layer 22 are set to values equivalent to the coefficient of thermal expansion of the glass substrate. be able to. Therefore, during the vapor deposition process, it is possible to reduce the deviation between the thermal expansion of the vapor deposition target substrate 91 and the thermal expansion of the vapor deposition mask 20, and the shape accuracy and positional accuracy of the vapor deposition layer 92 formed on the vapor deposition target substrate 91 can be reduced. can be improved. In this case, it is also possible to achieve high definition of the vapor deposited layer 92.

Further, according to this embodiment, the second metal layer 22 is bonded to the first metal layer 21 via the resin layer 60. This allows the second metal layer 22 to be easily attached to the first metal layer 21. Therefore, it is possible to easily obtain the vapor deposition mask 20 that can ensure rigidity even if the first metal layer 21 is thin. Further, since the resin layer 60 contains polyimide, the coefficient of thermal expansion of the resin layer 60 can be reduced. When the deposition target substrate 91 is composed of a glass substrate, the shape accuracy and positional accuracy of the deposition layer 92 formed on the deposition target substrate 91 are suppressed from decreasing due to a difference in thermal expansion coefficients. be able to.

In addition, in this embodiment mentioned above, the example in which the thickness reduction process included the 1st etching process and the polishing process was demonstrated. However, the present invention is not limited to this, and for example, when a polishing process is performed, the first etching process may be omitted. Alternatively, if the surface roughness of the second surface 21b of the first metal layer 21 after the first etching step is such that scattering of the exposure light L can be suppressed, the polishing step may be omitted.

Furthermore, in the present embodiment described above, an example has been described in which the vapor deposition mask 20 includes the first metal layer 21 and the second metal layer 22 provided on the first metal layer 21. However, the invention is not limited to this, and as long as the thickness of the first metal layer 21 is thick enough to be able to grip the clamp P and ensure handleability, The second metal layer 22 may not be provided.

Furthermore, the method for manufacturing the vapor deposition mask 20 described in the present embodiment described above is not limited to the above-mentioned procedure, and the order of each of the above-mentioned steps may be arbitrary as long as the vapor deposition mask 20 according to the present embodiment can be obtained. be.

20 Vapor deposition mask 21 First metal layer 21a First surface 21b Second surface 22 Second metal layer 40 Through hole 50 Support substrate 51 Bonding layer 52 Metal plate 53 Resist layer 53a Resist opening 60 Resin layer

Claims (18)

a preparation step of preparing a metal plate separably attached to a support substrate via a bonding layer; a thickness reduction step of reducing the thickness of the metal plate to obtain a first metal layer;
a through hole forming step of forming a through hole in the first metal layer;
After the through-hole forming step, a second metal layer having a metal layer opening that overlaps the through-hole in plan view and extending outside the first metal layer is attached to the first metal layer. Installation process and
After the attachment step, a separation step of separating the first metal layer from the support substrate ,
In the attachment step, the second metal layer is bonded to the first metal layer via a resin layer . The thickness reducing step includes a polishing step of polishing a surface of the first metal layer opposite to the support substrate to reduce the thickness of the first metal layer. Method for manufacturing a vapor deposition mask. The thickness reducing step includes, before the polishing step, a first etching step of etching a surface of the first metal layer opposite to the support substrate to reduce the thickness of the first metal layer. The method for manufacturing a vapor deposition mask according to claim 2. The through hole forming step includes a resist layer forming step of forming a resist layer on the polished surface of the first metal layer, an exposure step of exposing the resist layer, and developing the resist layer to form a resist opening. and a second etching step of etching the first metal layer through the resist opening to form the through hole. Method. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 4, wherein the thickness of the first metal layer after the thickness reduction step is 3 μm or more and 13 μm or less. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 5, wherein the second metal layer is thicker than the first metal layer. 7. The method for manufacturing a vapor deposition mask according to claim 1, wherein the first metal layer and the second metal layer are each made of an iron alloy containing nickel. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 7 , wherein the second metal layer has a thickness of 10 μm or more and 50 μm or less. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 8 , wherein the resin layer contains polyimide. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 9 , wherein the resin layer has a thickness of 1 μm or more and 10 μm or less. a first metal layer having a first surface and a second surface located on the opposite side of the first surface;
a through hole provided in the first metal layer;
a second metal layer provided on the first metal layer,
The surface roughness of the second surface of the first metal layer is smaller than the surface roughness of the first surface,
The second metal layer is a vapor deposition mask, wherein the second metal layer has a metal layer opening that overlaps the through hole in a plan view and extends to the outside of the first metal layer. The vapor deposition mask according to claim 11 , wherein the first metal layer has a thickness of 3 μm or more and 13 μm or less. The vapor deposition mask according to claim 11 or 12 , wherein the second metal layer is thicker than the first metal layer. The vapor deposition mask according to any one of claims 11 to 13 , wherein the first metal layer and the second metal layer are each made of an iron alloy containing nickel. The vapor deposition mask according to any one of claims 11 to 14 , wherein the second metal layer has a thickness of 10 μm or more and 50 μm or less. The vapor deposition mask according to any one of claims 11 to 15 , wherein the second metal layer is bonded to the first metal layer via a resin layer. The vapor deposition mask according to claim 16 , wherein the resin layer contains polyimide. The vapor deposition mask according to claim 16 or 17 , wherein the resin layer has a thickness of 1 μm or more and 10 μm or less.