JP7040509B2 - Image sensor and image sensor - Google Patents

Description

The present invention relates to an image pickup device and an image pickup apparatus.

There is known an image pickup device in which a plurality of pixels provided with a plurality of pairs of photoelectric conversion units are arranged and focus detection can be performed by a phase difference method using outputs from the pixels (for example, Patent Document 1). Such an image pickup device has a problem that the light receiving area of the photoelectric conversion unit is reduced.

Japanese Unexamined Patent Publication No. 2012-215785

According to the first aspect of the present invention, the image pickup element has a first photoelectric conversion unit, a second photoelectric conversion unit, a third photoelectric conversion unit, and a fourth photoelectric conversion unit that photoelectrically convert the light transmitted through the microlens to generate an electric charge. The conversion unit, the first storage unit that stores the electric charge generated by the first photoelectric conversion unit and the charge generated by the second photoelectric conversion unit, the electric charge generated by the third photoelectric conversion unit, and the first unit. 4 A second storage unit that stores the electric charge generated by the photoelectric conversion unit, a first transfer unit that transfers the electric charge generated by the first photoelectric conversion unit to the first storage unit, and a second photoelectric conversion unit. A second transfer unit that transfers the electric charge generated in the above to the first storage unit, a third transfer unit that transfers the electric charge generated by the third photoelectric conversion unit to the second storage unit, and the fourth photoelectric conversion unit. A fourth transfer unit that transfers the electric charge generated by the conversion unit to the second storage unit, a first control line for controlling the first transfer unit, and a second for controlling the second transfer unit. It includes a control line, a third control line for controlling the third transfer unit, and a fourth control line for controlling the fourth transfer unit.
According to the second aspect of the present invention, the image pickup element has a first photoelectric conversion unit, a second photoelectric conversion unit, a third photoelectric conversion unit, and a fourth photoelectric conversion unit that photoelectrically convert the light transmitted through the microlens to generate an electric charge. The conversion unit, the first storage unit that stores the electric charge generated by the first photoelectric conversion unit and the charge generated by the third photoelectric conversion unit, the electric charge generated by the second photoelectric conversion unit, and the first. 4 A second storage unit that stores the electric charge generated by the photoelectric conversion unit, a first transfer unit that transfers the electric charge generated by the first photoelectric conversion unit to the first storage unit, and a second photoelectric conversion unit. A second transfer unit that transfers the electric charge generated in the above to the second storage unit, a third transfer unit that transfers the electric charge generated by the third photoelectric conversion unit to the first storage unit, and the fourth photoelectric conversion unit. A fourth transfer unit that transfers the electric charge generated by the conversion unit to the second storage unit, a first control line for controlling the first transfer unit, and a second for controlling the second transfer unit. It includes a control line, a third control line for controlling the third transfer unit, and a fourth control line for controlling the fourth transfer unit.
According to the third aspect of the present invention, the image pickup device includes the above-mentioned image pickup device and an image generation unit that generates image data based on a signal output from the image pickup device.

The figure which shows the structural example of the digital camera by embodiment of this invention. The figure which shows the schematic structure of the image sensor The figure which shows typically the 1st region and the 2nd region on an image sensor. The figure which shows typically the circuit structure of the image pickup device in 1st Embodiment The figure which shows the drive timing for reading an output signal from a pixel in 1st Embodiment The figure which shows typically the circuit structure of the image pickup device in 1st Embodiment The figure which shows the drive timing for reading an output signal from a pixel in 1st Embodiment The figure which shows the schematic structure of the image sensor in the comparative example. The figure which shows typically the circuit structure of the image sensor in the comparative example. The figure which shows the schematic structure of the image sensor in the comparative example. The figure which shows typically the circuit structure of the image sensor in the comparative example. The figure which shows typically the circuit structure of the image sensor in 2nd Embodiment The figure which shows the drive timing for reading an output signal from a pixel in 2nd Embodiment The figure which shows the drive timing for reading an output signal from a pixel in 2nd Embodiment

-First embodiment-
Hereinafter, one embodiment will be described with reference to the drawings. FIG. 1 is a block diagram showing a configuration of an interchangeable lens type digital camera 1 including an image pickup device according to the present embodiment. The digital camera 1 of FIG. 1 is composed of an interchangeable lens 110 and a camera body 100, and the interchangeable lens 110 is attached to the camera body 100 via a lens mounting portion 105.

The interchangeable lens 110 includes a lens control device 111, a zoom lens 112, a focus lens 113, an anti-vibration lens 114, an aperture 115, a lens operation unit 116, and the like. The lens control device 111 includes a CPU and peripheral components such as a memory, drives control of the focus lens 113 and the aperture 115, and position detection of the zoom lens 112 and the focus lens 113.
The lens information is transmitted to the camera body 100, the camera information is received from the camera body 100, and the like.

The camera body 100 includes an image sensor 101, a body control device 102, and a body operation unit 103.
, And a display unit 104 and the like. The image pickup element 101 is arranged on the planned image plane (planned focal plane) of the interchangeable lens 110, and photoelectrically converts the subject image imaged by the interchangeable lens 110. The body operation unit 103 includes a shutter button, a focus detection area setting member, and the like. The display unit 104 is a liquid crystal monitor (rear monitor) mounted on the back surface of the camera body 100.
Is.

The body control device 102 includes a CPU and peripheral parts such as a memory. Body control device 1
Reference numeral 02 denotes an arithmetic unit that controls each component of the digital camera 1 and executes various data processing based on the control program. The body control device 102 includes a drive control unit 102a.
And a focus detection unit 102b and an image processing unit 102c as functions. The drive control unit 102a controls the drive control of the image pickup element 101 to read out the image signal and the focus detection signal from the image pickup element 101. The focus detection unit 102b causes the focus detection calculation and the focus adjustment of the interchangeable lens 110 based on the focus detection signal from the image sensor 101. The image processing unit 102c processes and records an image signal from the image sensor 101. The body control device 102 communicates with the lens control device 111 via an electric contact 106 provided in the lens mounting portion 105, and receives lens information and transmits camera information (defocus amount, aperture value, etc.).

The light flux passing through the interchangeable lens 110 forms a subject image on the light receiving surface of the image pickup device 101. This subject image is photoelectrically converted by the image pickup device 101, and the image signal and the focus detection signal are sent to the body control device 102.

The focus detection unit 102b of the body control device 102 performs a focus detection operation by a known image plane phase difference method based on the focus detection signal from the image pickup device 101, thereby performing the focus detection operation of the interchangeable lens 110.
Detects the focus adjustment state (defocus amount) of. The body control device 102 sends this defocus amount to the lens control device 111. The lens control device 111 calculates the drive amount of the focus lens 113 based on the received defocus amount, and drives the focus lens 113 with a motor or the like (not shown) based on this drive amount to move the focus lens 113 to the in-focus position. In other words, the image sensor 101, the drive control unit 102a, and the focus detection unit 102b constitute the focus detection device 2 according to the present embodiment.

Further, the image processing unit 102c of the body control device 102 processes the image signal from the image pickup element 101 to generate captured image data, and stores the captured image data in a memory card (not shown). Image processing unit 10
2c causes the display unit 104 to display a through image (live view image) based on the through image (live view image) signal from the image sensor 101.

(Structure of image sensor)
FIG. 2 is a diagram illustrating a schematic configuration of the image pickup device 101. In addition, in FIG. 2, pixel 2
In order to make the connection between 00 and the vertical signal line 300 easy to understand, the transistor and the like used for reading are omitted. In the image pickup element 101, a plurality of pixels 200 are provided two-dimensionally in the horizontal direction (row direction) and the vertical direction (column direction). Hereinafter, a plurality of pixels 200 arranged in the horizontal direction will be referred to as a pixel row, and a plurality of pixels 200 arranged in the vertical direction will be referred to as a pixel column.

Each pixel 200 has four photoelectric conversion units (photodiodes) PD_1, PD_2, PD_3, and PD_4 provided under one microlens (not shown). Each photoelectric conversion unit PD
Each of _1, PD_2, PD_3, and PD_4 receives four light fluxes that have passed through different regions of the exit pupil of the interchangeable lens 110. In the following description, the photoelectric conversion units PD_1 to PD_
When 4 is generically referred to, it is referred to as a photoelectric conversion unit PD. The photoelectric conversion unit PD is a charge storage type photoelectric conversion unit. In the case of a 4PD configuration having four photoelectric conversion units PD per pixel, when the two photoelectric conversion units PD are arranged in the horizontal direction (called horizontal division), the two photoelectric conversion units PD are arranged in the vertical direction (vertical division). Call). In the example shown in FIG. 2, the photoelectric conversion units PD_1 and PD_3 are arranged in the horizontal direction, and the photoelectric conversion units PD_2 and PD_4 are arranged in the horizontal direction. Photoelectric conversion unit PD_1
And PD_4 are arranged in the vertical direction, and the photoelectric conversion units PD_2 and PD_3 are arranged in the vertical direction.
That is, the four photoelectric conversion units PD are arranged in 2 rows and 2 columns.

Further, at each pixel position, a color filter (R: red filter,
G: green filter, B: blue filter) are arranged. That is, as the pixel 200, the spectral sensitivity of the R pixel having the spectral sensitivity of the red component (that is, the red filter is arranged), the G pixel having the spectral sensitivity of the green component (that is, the green filter is arranged), and the spectral sensitivity of the blue component. A B pixel having (that is, a blue filter is arranged) is provided. Pixel 200
Also serves as a shooting pixel and a focus detection pixel, and the pixel 200 is arranged on the entire surface of the image pickup element 101. Therefore, it is possible to perform focus detection at an arbitrary position on the shooting screen. Further, at the time of shooting, the photoelectric conversion units PD_1, PD_1, PD_3 and P of each pixel 200
By adding the output signal from D_4, it is possible to generate captured image data.

The image sensor 101 is a vertical signal line 300 for reading an output signal from the photoelectric conversion unit PD.
Have. In the image sensor 101, two vertical signal lines 300 (300 ₁ to 3) are used for each pixel row.
_002n ) is provided. For example, the pixel 200 in the first row has a vertical signal line 300 ₁ .
And the vertical signal line 300 ₂ . The photoelectric conversion unit PD_4 on the left side of the pixel 200 in the first row and the photoelectric conversion unit PD_3 on the right side are connected to the vertical signal line 300 ₁ . Vertical signal line 300
The photoelectric conversion unit PD_1 on the left side of the pixel ₂₀₀ in the first row and the photoelectric conversion unit PD_1 on the right side are connected to 2. That is, the photoelectric conversion unit PD arranged diagonally on the vertical signal line 300 ₁
_3 and PD_4 are connected, and the photoelectric conversion units PD_1 and PD_2 arranged in diagonal directions different from the above are connected to the vertical signal line 300 ₂ .

The two photoelectric conversion units PD arranged in the row direction in one pixel 200 are read out to different vertical signal lines 300. For example, in the pixel 200 in the first row, the photoelectric conversion unit P on the left side
D_1 is read out by the vertical signal line 300 ₂ , and the photoelectric conversion unit PD_3 on the right side is the vertical signal line 300.
Read to ₁ . The photoelectric conversion unit PD_4 on the left side is read by the vertical signal line 300 ₁ , and the photoelectric conversion unit PD_2 on the right side is read out by the vertical signal line 300 ₂ . In the above configuration, the pixel 200
Are arranged in n rows, whereas 2n of vertical signal lines 300 are required, but the influence on the total area is small.

The drive control unit 102a controls to read an output signal from the photoelectric conversion unit PD arranged in the vertical direction (first control) at the same timing with respect to the pixel 200 having the above configuration, and the photoelectric in the horizontal direction. Control (second control) to read an output signal from the conversion unit PD at the same timing is performed.
FIG. 3 shows a plurality of pixels 200 as a pixel group controlled by the first control on the image sensor 101.
The region (first region) R1 in which the pixels are arranged and the region (second region) R2 in which a plurality of pixels 200 are arranged as a pixel group controlled by the second control are schematically shown. The first region R1 and the second region R2 include a plurality of pixel rows in the vertical direction, and the first region R1 and the second region R2 are provided alternately along the vertical direction. The arrangement of the first region R1 and the second region R2 shown in FIG. 3 is an example, and is not limited to this arrangement example. Hereinafter, the pixels 20 arranged in the first region R1
The description will be described separately for 0 and the pixels 200 arranged in the second region R2. In the following description, terms such as the same timing and simultaneity are used, but the timing is not limited to the same timing or at the same time in a strict sense, and includes a time width that does not cause a decrease in the accuracy of the focus detection operation.

-Pixels arranged in the first region R1-
FIG. 4 is a diagram showing the details of FIG. 2 and shows connections at the transistor level. FIG. 4 shows the circuit configuration of one pixel 200 included in the first region R1 among the plurality of pixels 200 shown in FIG. 2. Each pixel 200 of the image sensor 101 has a reading unit 400 for reading an output signal from the photoelectric conversion unit PD. Each pixel 200 is provided with two readout units 400 ₁ and 400 ₂ , and two photoelectric conversion units P arranged diagonally, respectively.
Commonly provided for D. For example, the photoelectric conversion unit PD_3 and PD_4 are provided with a reading unit 4001 in common, and the photoelectric conversion units PD_1 and PD_2 are provided with _a reading unit 400.
₂ are provided in common. That is, the reading unit 400 ₁ reads out the output signal from the photoelectric conversion unit PD_3 and the output signal from the photoelectric conversion unit PD_4. The reading unit 400 ₂ reads out the output signal from the photoelectric conversion unit PD_1 and the output signal from the photoelectric conversion unit PD_1. The output signal read from each reading unit 400 is output via the corresponding vertical signal line 300. For example, the output signal read from the reading unit 400 ₁ is a vertical signal line 3.
The output signal output via _{001 and read from the reading unit 400 2 is} output via the vertical signal line 300 ₂ .

Each reading unit 400 includes a reset transistor RST (RST ₁ , RST ₂ ), an amplification transistor SF (SF ₁ , SF ₂ ), a selection transistor SEL (SEL ₁ , SEL ₂ ), and the like.
Floating diffusion FD (FD ₁ , FD ₂ ), transfer transistor TX1 (T)
It has X1 ₁ , TX1 ₂ ) and TX2 (TX2 ₁ , TX2 ₂ ). The floating diffusion FD accumulates the signal charge obtained by the photoelectric conversion in the photoelectric conversion unit PD (the floating diffusion FD accumulates the signal charge obtained by the photoelectric conversion.
Operates as a charge storage unit or charge retention unit. The amplification transistor SF operates as an amplification unit that amplifies a signal corresponding to the potential of the floating diffusion FD.
Each transfer transistor TX1 and TX2 operates as a transfer unit that transfers electric charges from the photoelectric conversion unit to the floating diffusion FD. The reset transistor RST operates as a reset unit that resets the potential of the floating diffusion FD and the electric charge of the photoelectric conversion unit. The selection transistor SEL operates as a selection unit for selecting the pixel 200. Each of these parts is connected as shown in FIG. Further, in FIG. 4, VDD is the power supply voltage.

The photoelectric conversion unit PD arranged in the row direction of each pixel 200 is a separate reading unit 400.
It is connected to the transfer transistors TX1 and TX2 of. For example, in the pixel 200, the photoelectric conversion unit PD_1 on the left side is connected to the transfer transistor TX1 ₂ of the readout unit 400 ₂ , and the photoelectric conversion unit PD_1 on the right side is connected to the transfer transistor TX2 ₂ of the readout unit 400 ₂ . The photoelectric conversion unit PD_3 on the right side is connected to the transfer transistor TX1 ₁ of the reading unit 400 ₁ , and the photoelectric conversion unit PD_4 on the left _{side is connected to the transfer transistor TX2 1 of} the reading unit 4001.

Transfer transistors TX1 ₂ and T connected to the photoelectric conversion units PD_1 and PD_4 of the pixel 200.
The gate of X2 ₁ is connected to the control line 210 to which the control pulse Vtx_1 is supplied by the local control line 211. On the other hand, the gates of the transfer transistors TX1 ₁ and TX2 ₂ connected to the photoelectric conversion units PD_3 and PD_2 of the pixel 200, respectively, are connected to the control line 220 to which the control pulse Vtx_2 is supplied by the local control line 221. That is, pixel 200
For the photoelectric conversion unit PD on the left side of, the transfer transistor TX1 is used by the control pulse Vtx_1.
, TX2 is controlled, and the transfer transistors TX1 and TX2 are controlled by the control pulse Vtx_2 for the photoelectric conversion unit PD on the right side.

(Reading out output signal)
Pixel 2 of the image sensor 101 of the present embodiment with reference to the timing chart shown in FIG.
The control when reading the output signal from 00 will be described. In FIG. 5, Vsel indicates a control pulse of the selection transistor SEL. Vrst indicates the control pulse of the reset transistor RST. Vtx_1 indicates the control pulse of the transfer transistors TX1 ₂ and TX2 ₁ corresponding to the photoelectric conversion units PD_1 and PD_4 on the left side of the pixel 200. Vtx_2 is pixel 20
Transfer transistors TX1 ₁ and TX2 ₂ corresponding to the photoelectric conversion units PD_3 and PD_2 on the right side of 0.
The control pulse of is shown. These points are the same in FIGS. 7, 13 and 14 described later.

As shown in FIG. 5, the drive control unit 102a controls the drive timing for reading the output signal from the pixel 200 by outputting various control pulses to the read unit 400.
The drive control unit 102a selects the pixel row for reading the output signal. The drive control unit 102a switches the Vsel from the Low level to the High level and turns on the selection transistor SEL. As a result, the floating diffusion FD and the vertical signal line 300 are connected. Note that FIG. 5 shows an example in which selection is performed line by line.

The drive control unit 102a switches the Vrst from the Low level to the High level, turns on the reset transistor RST, and resets the potential of the floating diffusion FD. This is the first reset of the floating diffusion FD. After that, the drive control unit 102a switches Vrst to the Low level and turns off the reset transistor RST. After the reset transistor RST is turned off, the potential level of the floating diffusion FD is settled in a predetermined static time. This statically indeterminate level is the dark level due to the first reset, and becomes a dark signal corresponding to the photoelectric conversion units PD_1 and PD_4 on the left side of the pixel 200. Here, on each of the vertical signal lines 300 ₁ to 300 _2n , the dark signals "Dark_4 ₁ , 1, ₂ , 4, ₃ , 1" for the photoelectric conversion units PD_1 and PD_4 on the left side in the pixel 200 of each row due to the first reset are used. ₄ , 4 _{5 5} , 1 ₆ ... 4 _(2n-1)
1 _2n ”is output at the same time.

After the dark level is settled, the drive control unit 102a switches Vtx_1 to the High level and turns on the transfer transistors TX1 ₂ and TX2 ₁ connected to the photoelectric conversion units PD_1 and PD_1 on the left side of the pixel 200. Pixel 2 during the High level period of Vtx_1
The signal charge stored in the photoelectric conversion unit PD_1 of 00 is the floating diffusion FD.
The signal charge transferred to ₂ and stored in the photoelectric conversion unit PD_4 is transferred to the floating diffusion FD ₁ . The drive control unit 102a switches the Vtx_1 to the Low level, and the transfer transistors TX1 ₂ and T connected to the photoelectric conversion units PD_1 and PD_4 of the pixel 200.
Turn off X2 ₁ .

After the transfer transistors TX1 ₂ and TX2 ₁ are turned off, the potential levels of the floating diffusion FD ₁ and FD ₂ are settled in a predetermined static time. This statically indeterminate potential level is the signal level read out at Vtx_1, and the photoelectric conversion unit PD_1 of the pixel 200,
It becomes a signal signal corresponding to PD_4 respectively. Here, each vertical signal line 300 ₁ to 30
In 0 _2n , the photoelectric conversion unit PD_ on the left side in the pixel 200 of each row by charge transfer at Vtx_1
1, Signal signal for PD_4 "Sig_4 ₁ , 1 ₂ 4, _{3 3} , 1 _{4 4} , 4 ₅ 1, ₆ ...,
4 _(2n-1) , 1 _2n "is output at the same time.

The difference between the dark signal and the signal signal output from each vertical signal line 300 in this way becomes the read signal amount of each photoelectric conversion unit PD_1 and PD_4 in the pixel 200, that is, the output signal. Therefore, in the plurality of pixels 200 arranged in the same pixel row, the output signals of the photoelectric conversion units PD_1 and PD_4 arranged in the vertical direction have temporal simultaneity.
Correlated double sampling (CD) for obtaining the difference between the above dark signal and the signal signal.
S) The operation may be performed in the post-stage circuit inside the sensor chip of the image sensor 101, or may be performed in the post-stage circuit outside the sensor chip.

After the above signal level is settled, the drive control unit 102a sets Vrst from Low level to H.
Switch to the high level and turn on the reset transistor RST to reset the potential of the floating diffusion FD. This is Floating Diffusion FD
This is the second reset of. After that, the drive control unit 102a switches Vrst to the Low level and turns off the reset transistor RST. After the reset transistor RST is turned off, the potential level of the floating diffusion FD is settled in a predetermined static time. This statically indeterminate level is the dark level due to the second reset, and becomes a dark signal corresponding to the photoelectric conversion units PD_2 and PD_3 on the right side of the pixel 200. Here, each vertical signal line 3
In 001 to 300 _2n , the dark signals "Dark_3 ₁ , 2 ₂ , 3 _{3 3} , 2 _{4 4} , 3 ₅ 2 ₆ " for the photoelectric conversion units PD_2 and PD_3 on the right side in the pixel 200 of each row due to the second reset ,
... 3 _(2n-1) , 2 _2n "are output at the same time.

After the dark level is settled, the drive control unit 102a switches Vtx_2 to the High level and turns on the transfer transistors TX1 ₁ and TX2 ₂ connected to the photoelectric conversion units PD_3 and PD_2 on the right side of the pixel 200. Pixel 200 during the High level period of Vtx_2
The signal charge stored in the photoelectric conversion unit PD_3 is transferred to the floating diffusion FD ₁ , and the signal charge stored in the photoelectric conversion unit PD_2 is transferred to the floating diffusion FD ₂ . The drive control unit 102a switches the Vtx_2 to the Low level, and the transfer transistors TX1 ₁ and TX 2 connected to the photoelectric conversion units PD_3 and PD_2 of the pixel 200.
Turn off ₂ .

After the transfer transistors TX1 ₁ and TX2 ₂ are turned off, the potential level of the floating diffusion FD is settled in a predetermined static time. This statically indeterminate potential level is Vtx_2
It is a signal level by reading out, and is a signal signal corresponding to the photoelectric conversion units PD_3 and PD_2 of the pixel 200. In each of the vertical signal lines 300 ₁ to 300 _2n , the signal signals for the photoelectric conversion unit PD_3 and PD_2 on the right side in the pixel 200 of each row by charge transfer in Vtx_2 "Sig_3 ₁ , 2 ₂ , 3 ₃ , 2 ₄ ", 3 ₅ , 2, ₆ , ..., 3 _(2n-1) , 2 _2n "is output.

The difference between the dark signal and the signal signal output from each vertical signal line 300 in this way becomes the read signal amount of each photoelectric conversion unit PD_2 and PD_3 in the pixel 200, that is, the output signal. Therefore, in the plurality of pixels 200 arranged in the same pixel row, the output signals of the photoelectric conversion units PD_2 and PD_3 arranged in the vertical direction have temporal simultaneity.
Correlated double sampling (CD) for obtaining the difference between the above dark signal and the signal signal.
S) The operation may be performed in the post-stage circuit inside the sensor chip of the image sensor 101, or may be performed in the post-stage circuit outside the sensor chip.

As described above, in the pixel 200, the drive control unit 102a outputs an output signal from the photoelectric conversion units PD_1 and PD_4 arranged in the vertical direction at the same timing. The drive control unit 102a outputs an output signal from the photoelectric conversion units PD_2 and PD_3 arranged in the vertical direction at the same timing. That is, the drive control unit 102a permits charge transfer from the photoelectric conversion units PD_1 and PD_4 to the transfer transistors TX1 ₂ and TX2 ₁ at the same timing, and is the same for the transfer transistors TX1 ₁ and TX2 ₂ . Charge transfer from the photoelectric conversion units PD_3 and PD_2 is permitted at the timing of. Therefore, the drive control unit 10
2a selectively allows charge transfer to the transfer transistors TX1 ₂ and TX2 ₂ connected to the photoelectric conversion units PD_1 and PD_2 arranged diagonally in the pixel 200, respectively. The drive control unit 102a is a photoelectric conversion unit PD_3 arranged in the diagonal direction of the pixel 200.
For the transfer transistors TX1 ₁ and TX2 ₁ connected to and PD_4, respectively.
Alternatively allow charge transfer.
As a result, charge transfer can be performed for each of the photoelectric conversion units PD_1 to PD_1 without providing floating diffusion, so that the number of parts can be reduced and the area of the light receiving surface of the photoelectric conversion units PD_1 to PD_4 can be increased. can.

In the above description, the drive control unit 102a refers to the pixel 200 in the first region R1.
After outputting the output signal from the photoelectric conversion units PD_1 and PD_4, the photoelectric conversion units PD_2 and PD_3
The drive timing was controlled so that the output signal was output from, but the present invention is not limited to this example.
The drive control unit 102a has the photoelectric conversion units PD_2 and PD_ for the pixel 200 of the first region R1.
After the output signal is output from 3, the drive timing may be controlled so that the output signal is output from the photoelectric conversion units PD_1 and PD_1.

The drive control unit 102a performs the above control for each pixel row included in the first region R1 of the image pickup device 101, and reads out the output signal.
(Focus detection)
When the focus is adjusted in response to the half-press operation of the shutter button by the user, the focus detection unit 102b uses the output signal read as described above as the focus detection signal.
Focus detection calculation is performed by a known image plane phase difference method. In this case, the focus detection unit 102b generates a signal sequence using a plurality of output signals having temporal simultaneity. For example, the focus detection unit 102b generates a first signal column {an} using the output signal from the photoelectric conversion unit PD_1 of each row, and uses the output signal from the photoelectric conversion unit PD_1 of each row to generate a second signal string {an}. bn} is generated. The focus detection unit 102b detects the focus adjustment state of the interchangeable lens 110, that is, the defocus amount by detecting the amount of image deviation relative to the generated first signal sequence {an} and the second signal sequence {bn}. do.

The focus detection unit 102b generates a first signal string {cn} using the output signal from the photoelectric conversion unit PD_3 of each row, and uses the output signal from the photoelectric conversion unit PD-2 of each row to generate the second signal string {dn}.
} May be generated. In particular, in the peripheral portion of the image pickup device 101, the luminous flux from the subject is more susceptible to vignetting or the like than in the central portion of the image pickup element 101. The focus detection unit 102b is an output signal from a pair of photoelectric conversion units PD_1, PD_4, or photoelectric conversion units PD_1, PD_3, which are less affected by vignetting, among the output signals from the pixels 200 arranged in the peripheral portion of the image sensor 101. May be selected and used as the focus detection signal. For the pixel 200 arranged in the central portion of the image sensor 101, the focus detection unit 102b uses the output signal from any pair of the photoelectric conversion units PD_1 and PD_4 or the photoelectric conversion units PD_2 and PD_3 as the focus detection signal. Can be used.

As described above, a color filter is arranged at each pixel position of the image pickup device 101 according to the rules of the Bayer arrangement. Therefore, the focus detection unit 102b has a pair of signal sequences {an.
}, {Bn} or a pair of signal sequences {cn}, {dn}, the output signal from the pixel 200 in which the same color filter is arranged is used. For example, when performing a focus detection operation using an output signal from the pixels 200 arranged in the first column as shown in FIG. 2, the focus detection unit 102b is arranged with a G color filter as an example. The output signals from the pixels 200 of the first row, the third row, ... Are used.

-Pixels arranged in the second region R2-
FIG. 6 is a circuit diagram showing connections at the transistor level of each pixel 200 arranged in the second region R2, and is a diagram showing FIG. 2 in detail. Note that also in FIG. 6, the circuit configuration of one pixel 200 included in the second region R2 among the plurality of pixels 200 shown in FIG. 2 is shown.
Transfer transistors TX1 ₂ and T connected to the photoelectric conversion units PD_1 and PD_3 of the pixel 200.
The gate of X1 ₁ is controlled by the local control lines 251 and 252, respectively.
It is connected to the control line 210 to which x_1 is supplied. Photoelectric conversion unit PD_4, PD_ of pixel 200
The gates of the transfer transistors TX2 ₁ and TX2 ₂ connected to 2 are connected to the control line 220 to which the control pulse Vtx_2 is supplied by the local control lines 253 and 254, respectively. That is, the transfer transistors TX1 and TX2 are controlled by the control pulse Vtx_1 for the upper photoelectric conversion unit PD of the pixel 200, and the transfer transistors TX1 and TX2 are controlled by the control pulse Vtx_1 for the lower photoelectric conversion unit PD. Will be done. The other configuration, that is, the signal circuit for reading the electric charge accumulated in the photoelectric conversion unit PD to the vertical signal line 300 is the same as that of the pixel 200 arranged in the first region R1.

(Reading out output signal)
Pixels 200 arranged in the second region R2 with reference to the timing chart shown in FIG.
The control when reading the output signal from is described. In the following description, the first
The difference from the drive timing at the time of reading out the output signal from the pixel 200 arranged in the region R1 is mainly performed.
In FIG. 7, Vtx_1 shows the control pulses of the transfer transistors TX1 ₂ and TX1 ₁ corresponding to the photoelectric conversion units PD_1 and PD_3 on the upper side of the pixel 200. Vtx_2 is pixel 20
Transfer transistors TX2 ₁ and TX2 ₂ corresponding to the photoelectric conversion units PD_4 and PD_2 on the lower side of 0.
The control pulse of is shown.

As shown in FIG. 7, the drive control unit 102a selects the pixel row for reading the output signal by turning on the selection transistor SEL in the same manner as in the case of the pixel 200 in the first region R1. Note that FIG. 7 also shows an example in which selection is performed line by line. The drive control unit 102a resets the potential of the floating diffusion FD for the first time in the same manner as in the case of the pixel 200 of the first region R1. After a predetermined static time elapses, the dark signals "Dark_3 ₁ , 1" for the upper photoelectric conversion units PD_1 and PD_3 in the pixel 200 of each row due to the first reset are sent to the vertical signal lines 300 ₁ to 300 _2n . ₂ , 3 ₃ , 1 _{4 4} , 3 ₅
1, ₆ , ..., 3 _(2n-1) , 1 _2n "are output at the same time.

The drive control unit 102a switches Vtx_1 to the High level and transfers the transfer transistor T.
Turn on X1 ₂ and TX1 ₁ . During the High level period of Vtx_1, the signal charge stored in the photoelectric conversion unit PD_1 of the pixel 200 is transferred to the floating diffusion FD ₂ , and the signal charge stored in the photoelectric conversion unit PD_3 is the floating diffusion F.
Transferred to D ₁ . The drive control unit 102a switches Vtx_1 to the Low level and turns off the transfer transistors TX1 ₂ and TX1 ₁ . After that, the potential levels of the floating diffusion FD ₁ and FD ₂ are settled in a predetermined static time, and become the signal level read by Vtx_1. In each vertical signal line 300 ₁ to 300 _2n , a signal signal “Sig_3 ₁ , 1, ₂ , 3” corresponding to the signal level for the upper photoelectric conversion units PD_1 and PD_3 in the pixel 200 of each row by charge transfer in Vtx_1 ₃ , 1 ₄ , 3 _{5 5} , 1 ₆ ... 3 _(2)
n-1) , 1 and _2n ”are output at the same time.

The difference between the dark signal and the signal signal output from each vertical signal line 300 as described above becomes the output signal of each photoelectric conversion unit PD_1 and PD_3 in the pixel 200. Therefore, in a plurality of pixels 200 arranged in the same pixel row, the photoelectric conversion units PD arranged in the horizontal direction
The output signals of _1 and PD_3 have temporal simultaneity.
Correlated double sampling (CD) for obtaining the difference between the above dark signal and the signal signal.
S) The operation may be performed in the post-stage circuit inside the sensor chip of the image sensor 101, or may be performed in the post-stage circuit outside the sensor chip.

After the signal level is settled, the drive control unit 102a resets the potential of the floating diffusion FD for the second time in the same manner as in the case of the pixel 200 of the first region R1. After a predetermined static time elapses, the dark signals "D" for the lower photoelectric conversion units PD_2 and PD_4 in the pixel 200 of each row due to the second reset are sent to the vertical signal lines 300 ₁ to 300 _2n .
"ark_4 ₁ , 2 ₂ , 4, ₃ , 2, ₄ , 4, ₅ , 2, ₆ , ..., 4 _(2n-1) , 2 _2n " are output at the same time.

After the dark level is settled, the drive control unit 102a switches Vtx_2 to the High level and turns on the transfer transistors TX2 ₁ and TX2 ₂ . During the High level period of Vtx_2, the signal charge stored in the photoelectric conversion unit PD_4 of the pixel 200 is transferred to the floating diffusion FD ₁ , and the signal charge stored in the photoelectric conversion unit PD_2 is transferred to the floating diffusion FD ₂ . The drive control unit 102a sets Vtx_2 to L.
Switch to the ow level and turn off the transfer transistors TX2 ₁ and TX2 ₂ . After that, the potential level of the floating diffusion FD is settled in a predetermined static time, and becomes the signal level by reading Vtx_2. Vtx for each vertical signal line 300 ₁ to 300 _2n
Signal signals for the lower photoelectric conversion units PD_2 and PD_4 in the pixel 200 of each row due to charge transfer at _2 "Sig_4 ₁ , 2 ₂ , 4 ₃ 2, ₄ , 4, ₅ , 2, ₆ , ..., 4" _(2n-1) ,
_22n ”is output.

The difference between the dark signal and the signal signal output from each vertical signal line 300 is the pixel 200.
It becomes an output signal of each photoelectric conversion part PD_2, PD_4 in. Therefore, in the plurality of pixels 200 arranged in the same pixel row, the output signals of the photoelectric conversion units PD_2 and PD_4 arranged in the horizontal direction have temporal simultaneity.
Correlated double sampling (CD) for obtaining the difference between the above dark signal and the signal signal.
S) The operation may be performed in the post-stage circuit inside the sensor chip of the image sensor 101, or may be performed in the post-stage circuit outside the sensor chip.

The drive control unit 102a has a photoelectric conversion unit PD for the pixel 200 in the second region R2.
The drive timing is controlled so that the output signals are output from the photoelectric conversion units PD_1 and PD_4 after the output signals are output from _1 and PD_3, but the present invention is not limited to this example. Drive control unit 10
2a may control the drive timing so that the pixel 200 of the second region R2 outputs the output signal from the photoelectric conversion units PD_1 and PD_4 and then outputs the output signal from the photoelectric conversion units PD_1 and PD_3.

(Focus detection)
The focus detection unit 102b uses the output signal read as described above as a focus detection signal to perform a focus detection operation by a known image plane phase difference method. In this case, the focus detector 102
b generates a signal sequence using a plurality of output signals having temporal simultaneity. For example, the focus detection unit 102b uses the output signal from the photoelectric conversion unit PD_1 of each column to perform the first signal sequence {a.
n} is generated, and the second signal string {bn} is generated using the output signal from the photoelectric conversion unit PD_3 of each column. The focus detection unit 102b generated the first signal sequence {an} and the second signal sequence {bn.
} By detecting the amount of image deviation relative to the image, the focus adjustment state of the interchangeable lens 110, that is, the defocus amount is detected. The focus detection unit 102b is a photoelectric conversion unit PD_ of each row.
The first signal sequence {cn} may be generated using the output signal from 4, and the second signal sequence {dn} may be generated using the output signal from the photoelectric conversion unit PD_2 of each column.

The focus detection unit 102b is a pair of photoelectric conversion units PD_1 and PD_3, or photoelectric conversion units PD_2 and PD_4, which are less affected by vignetting, among the output signals from the pixels 200 arranged in the peripheral portion of the image sensor 101. The output signal may be selected and used as the focus detection signal. Further, the focus detection unit 102b has a pair of signal sequences {an}, {bn} or a pair of signal sequences {cn}.
, {Dn}, the output from the pixel 200 in which the same color filter is arranged is used. For example, when performing a focus detection operation using an output signal from the pixel 200 arranged in the first row as shown in FIG. 2, the focus detection unit 102b is arranged with a G color filter as an example. The output signals from the pixels 200 of the first column, the third column, ... Are used.

As described above, for the output signals from the plurality of pixels 200 provided in the first region R1, the focus detection unit 102b generates a pair of signal trains along the vertical direction, and the image shift between the signal trains. The defocus amount is calculated by detecting the amount. For the output signals from the plurality of pixels 200 provided in the second region R2, the focus detection unit 102b generates a pair of signal trains along the horizontal direction and detects the amount of image deviation between the signal trains. The amount of defocus is calculated by. Therefore, the image sensor 101 composed of pixels 200 having the same circuit configuration
In the above, the detection of the vertical image deviation of the subject image and the detection of the horizontal image deviation can be performed by using the output signal of the same frame.

-Image generation for shooting-
When performing a shooting operation in response to a user's full pressing of the shutter button, the image processing unit 102c uses the output signal read as described above as an image signal. In this case, the image processing unit 102c has the photoelectric conversion units PD_1 and PD_ for each pixel 200.
2. The output signals output from PD_3 and PD_4 are added to generate an image signal. The image processing unit 102c performs various image processing on the image signal to generate image data for photographing.

(Comparative example)
8 and 9 show the configuration of the pixel 500 in the comparative example, and FIGS. 10 and 11 show the pixel 5 in the comparative example.
The configuration of 01 is shown. 8 and 10 are diagrams illustrating a schematic configuration of pixels 500 and 501 in a comparative example. In FIGS. 8 and 10, the pixels 500 and 501 and the vertical signal line 600 are shown.
In order to make the connection with (600 ₁ , 600 ₂ ) easy to understand, the transistor used for reading is omitted. 8 and 10 show a part of the pixels 500 and 501 in the first row among the plurality of pixel rows. 9 and 11 are diagrams showing the details of FIGS. 8 and 10, respectively, and show connections at the transistor level. There are four photoelectric conversion units P in each of the pixels 500 and 501.
D'(PD'_1, PD'_2, PD'_3, PD'_4) is arranged in 2 rows and 2 columns.

In the pixel 500, an output signal is read from the photoelectric conversion units PD'_1 and PD'_4 arranged in the vertical direction to the vertical signal line 600 ₁ of the pixel 500, and the photoelectric conversion unit PD arranged in the vertical direction is used.
The output signal is read from'_2 and PD'_3 to the vertical signal line 600 ₂ . That is, from the photoelectric conversion units PD'_1 and PD'_4, the reset transistor RST provided in common to both is used.
The output signal is read out via ' ₁ , the amplification transistor _SF'1 , the selection transistor _SEL'1 , and the floating diffusion _FD'1 . Photoelectric conversion unit PD'_2, PD'_
From 3, the output signal is read out via the reset transistor _RST'2 , the amplification transistor _SF'2 , the selection transistor _SEL'2 , and the floating diffusion _FD'2 , which are commonly provided in both. Therefore, in the pixel 500, the photoelectric conversion unit PD'_
1. The output signals from PD'_3 have temporal simultaneity, and the photoelectric conversion units PD'_2 and PD'_
The output signals from 4 have temporal simultaneity.

In the pixel 501, an output signal is read from the horizontally arranged photoelectric conversion units PD'_1 and _{PD'_3} to the vertical signal line 6001 of the pixel 501, and the horizontally arranged photoelectric conversion unit PD
The output signal is read from'_2 and PD'_4 to the vertical signal line 600 ₂ . That is, from the photoelectric conversion units PD'_1 and PD'_3, the reset transistor RST commonly provided for both is provided.
The output signal is read out via ' ₁ , the amplification transistor _SF'1 , the selection transistor _SEL'1 , and the floating diffusion _FD'1 . Photoelectric conversion unit PD'_2, PD'_
From 4, the output signal is read out via the reset transistor _RST'2 , the amplification transistor _SF'2 , the selection transistor _SEL'2 , and the floating diffusion _FD'2 , which are commonly provided in both. Therefore, in pixel 501, the photoelectric conversion unit PD'_
1. The output signals from PD'_4 have temporal simultaneity, and the photoelectric conversion unit PD'_2, PD'_
The output signals from 3 have temporal simultaneity.

As described above, the pixel 500 obtains an output signal having temporal simultaneity in the horizontal direction, and the pixel 501 obtains an output signal having temporal simultaneity in the vertical direction. However, the circuit configurations of the pixels 500 and the pixels 501 are different from each other.

According to the first embodiment described above, the following effects can be obtained.
(1) The pixel 200 has two photoelectric conversion units PD arranged in the row direction and two in the column direction, and two floating diffusion FDs. In the four photoelectric conversion units PD, the photoelectric conversion units PD_1 and PD_3 are arranged in order in the row direction, the photoelectric conversion units PD_1 and PD_4 are arranged in order in the column direction, and the photoelectric conversion units PD_3 and PD_2 are arranged in order in the column direction. To. Photoelectric conversion unit PD_1
And the electric charge generated by the photoelectric conversion unit PD_2 is transferred to the floating diffusion FD ₂ , and the electric charge generated by the photoelectric conversion unit PD_3 and the photoelectric conversion unit PD_4 is transferred to the floating diffusion FD ₁ . Therefore, the number of transistors required for one pixel can be reduced from 16 to 10 as compared with the conventional technique of providing floating diffusion for each of the four photoelectric conversion units. Therefore, the area of each light-receiving surface of the photoelectric conversion unit PD of the present embodiment can be increased as compared with the area of the light-receiving surface of the photoelectric conversion unit of the above-mentioned conventional technique. That is, in the present embodiment, it is possible to suppress the decrease in the number of saturated electrons due to the decrease in the area of the light receiving surface and the adverse effect on the imaging characteristics due to the decrease in the saturation output. Thereby, for example, when the output from the pixel 200 is used for the focus detection, it is possible to prevent the focus detection accuracy from being lowered.

(2) The pixel 200 has two photoelectric conversion units PD arranged in the row direction and two in the column direction, and a vertical signal line 300 from which a signal due to the electric charge of the photoelectric conversion unit PD is output. In the four photoelectric conversion units PD, the photoelectric conversion units PD_1 and PD_3 are arranged in order in the row direction, the photoelectric conversion units PD_1 and PD_4 are arranged in order in the column direction, and the photoelectric conversion units PD_3 and PD_2 are arranged in order in the column direction. To.
The signal due to the electric charge generated by the photoelectric conversion unit PD_1 and the photoelectric conversion unit PD-2 is the vertical signal line 3.
It is output to 002, and the signal due to the electric charge generated by the photoelectric conversion unit PD_3 and the photoelectric conversion unit _{PD_4} is output to the vertical signal line 300 ₁ . Therefore, since the number of parts required for one pixel can be reduced, the area of each light receiving surface of the photoelectric conversion unit PD is made larger than the area of the light receiving surface of the photoelectric conversion unit of the above-mentioned conventional technique. be able to. That is, similarly to the above-mentioned effect (1), it is possible to suppress the decrease in the number of saturated electrons due to the decrease in the area of the light receiving surface and the adverse effect on the imaging characteristics due to the decrease in the saturation output.

(3) The transfer of the electric charge from the photoelectric conversion unit PD_1 and the transfer of the electric charge from the photoelectric conversion unit PD-2 are performed alternately, and the transfer of the electric charge from the photoelectric conversion unit PD_3 and the electric charge from the photoelectric conversion unit PD_4 are performed. Transfer is performed alternately. Further, it is possible to output an output signal having temporal simultaneity in the horizontal direction or an output signal having temporal simultaneity in the vertical direction from the pixels 200 having the same circuit configuration. Therefore, unlike the case where the pixels 500 and 501 as in the comparative example are used, the circuit configuration is performed between the output signal having the temporal simultaneity in the horizontal direction and the output signal having the temporal simultaneity in the vertical direction. It is possible to prevent the output signals from being output according to different capacitances due to the difference between the two.

(4) For the pixel 200 of the first region R1, the electric charge of the photoelectric conversion unit PD_1 is transferred by the transfer transistor TX1 ₂ via the control line 210 to which the control pulse Vtx_1 is supplied.
The transfer of the electric charge of the photoelectric conversion unit PD_4 by the transfer transistor TX2 ₁ is performed at the same time.
The charge transfer of the photoelectric conversion unit PD_3 by the transfer transistor TX1 ₁ and the photoelectric conversion unit P by the transfer transistor TX2 ₂ via the control line 220 to which the control pulse Vtx_2 is supplied.
The transfer of the charge of D_2 is performed at the same time.
The control line 21 to which the control pulse Vtx_1 is supplied to the pixel 200 of the second region R2.
The transfer of the electric charge of the photoelectric conversion unit PD_1 by the transfer transistor TX1 ₂ and the transfer of the electric charge of the photoelectric conversion unit PD_3 by the transfer transistor TX1 ₁ are performed simultaneously via 0. The charge transfer of the photoelectric conversion unit PD_4 by the transfer transistor TX2 ₁ and the photoelectric conversion unit PD_2 by the transfer transistor TX2 ₂ via the control line 220 to which the control pulse Vtx_2 is supplied.
Charge transfer is performed at the same time. Therefore, unlike the case of the comparative example, from the pixels 200 having the same circuit configuration for reading the signal, from the photoelectric conversion unit PD arranged in the vertical direction or the photoelectric conversion unit PD arranged in the horizontal direction at the same timing. It becomes possible to read the output signal.

(5) The control lines 210 and 220 are commonly provided for a pixel sequence composed of a plurality of pixels 200, and for the pixels 200 of the first region R1, the control lines 210 are the transfer transistors TX1 ₂ .
, TX2 ₁ and the control line 220 is connected to the transfer transistors TX1 ₁ and TX2 ₂ . For the pixel 200 of the second region R2, the control line 210 is the transfer transistor TX1 ₂ .
It is connected to TX1 ₁ , and the control line 220 is connected to transfer transistors TX2 ₁ and TX2 ₂ . Therefore, the local control lines 211, 221 and 251-2 from the control lines 210 and 220.
By making the transfer transistors TX1 and TX2 connected to 54 different, the pixel 200
Can be included in either the first region R1 or the second region R2. That is, the degree of freedom in the arrangement of the first region R1 and the second region R2 can be improved.

-Second embodiment-
A second embodiment of the present invention will be described with reference to the drawings. In the following explanation, the first
The same components as those in the embodiment are designated by the same reference numerals, and the differences will be mainly described. The points not particularly described are the same as those in the first embodiment. In the present embodiment, the connection of the local control line connecting the control line and the pixel transfer transistor is different from that of the first embodiment.

FIG. 12 is a circuit diagram showing the connection of each pixel 200 of the image pickup device 101 at the transistor level in the second embodiment, and is a diagram showing FIG. 2 in detail.
The gate of the transfer transistor TX1 ₂ connected to the photoelectric conversion unit PD_1 of the pixel 200 is
The local control line 261 connects to the control line 210 to which the control pulse Vtx_1 is supplied. The gate of the transfer transistor TX1 ₁ connected to the photoelectric conversion unit PD_3 is connected to the control line 220 to which the control pulse Vtx_2 is supplied by the local control line 262. The gate of the transfer transistor TX2 ₁ connected to the photoelectric conversion unit PD_4 is a local control line 2.
The control pulse Vtx_3 is connected to the control line 230 to which the control pulse Vtx_3 is supplied by 63. The gate of the transfer transistor TX2 ₂ connected to the photoelectric conversion unit PD_2 is connected to the control line 240 to which the control pulse Vtx_4 is supplied by the local control line 264. That is, pixel 20
Control pulses Vtx_1, Vtx_2, Vt for each of the four photoelectric conversion units PD of 0
The transfer transistors TX1 and TX2 are controlled by x_3 and Vtx_4, respectively.
Other configurations are the same as the pixels 200 according to the first embodiment.

(Reading out output signal)
The image sensor 101 of the present embodiment is referred to with reference to the timing charts shown in FIGS. 13 and 14.
The control when reading the output signal from the pixel 200 of the above will be described. FIG. 13 shows a case where an output signal having temporal simultaneity is read from the photoelectric conversion unit PD (first control), and FIG. 14 shows a case where temporal simultaneity is obtained from the photoelectric conversion unit PD in the horizontal direction. The case of reading out the output signal (second control) is shown. In FIGS. 13 and 14, Vtx_1 indicates a control pulse of the transfer transistor TX1 ₂ corresponding to the photoelectric conversion unit PD_1 of the pixel 200. Vtx_2 indicates the control pulse of the transfer transistor TX1 ₁ corresponding to the photoelectric conversion unit PD_3. Vtx_3 is
_The control pulse of the transfer transistor TX21 corresponding to the photoelectric conversion unit PD_4 is shown. Vtx_4
Indicates the control pulse of the transfer transistor TX2 ₂ corresponding to the photoelectric conversion unit PD_2.

First, the first output signal having temporal simultaneity in the vertical direction is read out from the photoelectric conversion unit PD.
The control will be described. In the following description, the difference from the drive timing at the time of reading the output signal from the pixel 200 arranged in the first region R1 in the first embodiment is mainly performed.
As shown in FIG. 13, the drive control unit 102a resets the potential of the floating diffusion FD for the first time in the same manner as in the first embodiment. After a predetermined static time has elapsed, each vertical signal line 300 ₁ to 300 _2n has a pixel 2 in each row due to the first reset.
Dark signals for the photoelectric conversion units PD_1 and PD_4 on the left side of 00 "Dark_4 ₁ , 1 ₂ , 4"
₃ , 1, ₄ , 4, ₅ , 1, ₆ , ..., 4 _(2n-1) , 1 _2n "are output at the same time.

The drive control unit 102a switches Vtx_1 and Vtx_3 to the High level at the same timing, and turns on the transfer transistors TX1 ₂ and TX2 ₁ connected to the photoelectric conversion units PD_1 and PD_4 on the left side of the pixel 200. In the High level period of Vtx_1
The signal charge stored in the photoelectric conversion unit PD_1 of the pixel 200 is transferred to the floating diffusion FD ₂ , and the signal charge stored in the photoelectric conversion unit PD_4 is transferred to the floating diffusion FD ₁ during the High level period of Vtx_3. Drive control unit 1
02a switches Vtx_1 and Vtx_3 to the Low level at the same timing, and turns off the transfer transistors TX1 ₂ and TX2 ₁ . After that, the potential level of the floating diffusion FD is settled in a predetermined static time, and becomes a signal level by reading Vtx_1 and Vtx_3. In each vertical signal line 300 ₁ to 300 _2n , the signal signals for the photoelectric conversion units PD_1 and PD_4 on the left side in the pixel 200 of each row "Sig_4 ₁ , 1 ₂ , 4 ₃ , 1 ₄ "
4, ₅ , 1, ₆ , ..., 4 _(2n-1) , 1 _2n "is output.

The difference between the dark signal and the signal signal output from each vertical signal line 300 is the pixel 200.
It becomes an output signal of each photoelectric conversion part PD_1 and PD_4 in. Therefore, in the plurality of pixels 200 arranged in the same pixel row, the output signals of the photoelectric conversion units PD_1 and PD_4 arranged in the vertical direction have temporal simultaneity.

After the signal level is settled, the drive control unit 102a resets the potential of the floating diffusion FD for the second time in the same manner as in the first embodiment. After a predetermined static time elapses, the dark signals "Dark_3 ₁ and" for the photoelectric conversion units PD_2 and PD_3 on the right side in the pixel 200 of each row due to the second reset are sent to the vertical signal lines 300 ₁ to 300 _2n .
2 ₂ , 3 ₃ , 2, ₄ , 3, ₅ , 2, ₆ , ..., 3 _(2n-1) , 2 _2n "are output at the same time.

After the dark level is settled, the drive control unit 102a switches Vtx_2 and Vtx_4 to the High level at the same timing, and turns on the transfer transistors TX1 ₁ and TX2 ₂ . During the High level period of Vtx_2, the signal charge accumulated in the photoelectric conversion unit PD_3 of the pixel 200 is transferred to the floating diffusion FD ₁ and the Hi of Vtx_4.
During the gh level period, the signal charge accumulated in the photoelectric conversion unit PD-2 is transferred to the floating diffusion FD ₂ . The drive control unit 102a has Vtx_2 and Vtx_4.
Is switched to the Low level at the same timing, and the transfer transistors TX1 ₁ and TX2 ₂ are turned off. After that, the potential level of the floating diffusion FD is settled at a predetermined static time, and becomes a signal level by reading Vtx_2 and Vtx_4. For each vertical signal line 300 ₁ to 300 _2n , the photoelectric conversion units PD_2 and PD_ on the right side in the pixel 200 of each row
Signal signal for 3 "Sig_3 ₁ , 2 ₂ , 3 _{3 3} , 2 _{4 4} , 3 _{5 5} , 2 ₆ ... 3 _(2n)
-1) , _22n ”is output.

The difference between the dark signal and the signal signal output from each vertical signal line 300 in this way becomes the output signal of each photoelectric conversion unit PD_2 and PD_3 in the pixel 200. therefore,
In a plurality of pixels 200 arranged in the same pixel row, the photoelectric conversion unit PD_ arranged in the vertical direction
2. The output signal of PD_3 has temporal simultaneity.

Next, a second output signal having temporal simultaneity in the horizontal direction is read from the photoelectric conversion unit PD.
The control will be described. In the following description, the difference from the drive timing at the time of reading the output signal from the pixel 200 arranged in the second region R2 in the first embodiment is mainly performed.
As shown in FIG. 14, the drive control unit 102a resets the potential of the floating diffusion FD for the first time in the same manner as in the first embodiment. After a predetermined static time has elapsed, each vertical signal line 300 ₁ to 300 _2n has a pixel 2 in each row due to the first reset.
Dark signal "Dark_3 ₁ , 1, ₂ , 3" for the upper photoelectric conversion units PD_1 and PD_3 in 00
₃ , 1, ₄ , 3, ₅ , 1, ₆ , ..., 3 _(2n-1) , 1 _2n "are output at the same time.

The drive control unit 102a switches Vtx_1 and Vtx_2 to the High level at the same timing, and turns on the transfer transistors TX1 ₂ and TX1 ₁ . High of Vtx_1
During the level period, the signal charge accumulated in the photoelectric conversion unit PD_1 of the pixel 200 is transferred to the floating diffusion FD ₂ , and during the High level period of Vtx_1, the signal charge is transferred to the floating diffusion FD 2.
The signal charge stored in the photoelectric conversion unit PD_3 is transferred to the floating diffusion FD ₁ . The drive control unit 102a sets Vtx_1 and Vtx_2 at the same timing as Lo.
Switch to the w level and turn off the transfer transistors TX1 ₂ and TX1 ₁ . After that, the potential level of the floating diffusion FD is settled at a predetermined static time, and Vtx_1, V.
It is the signal level by reading tx_2. In each of the vertical signal lines 300 ₁ to 300 _2n , the signal signals “Sig” for the upper photoelectric conversion units PD_1 and PD_3 in the pixel 200 of each row
_3 ₁ , 1, ₂ , 3, ₃ , 1, ₄ , 3, ₅ , 1, ₆ , ..., 3 _(2n-1) , 1 _2n "is output.

The difference between the dark signal and the signal signal output from each vertical signal line 300 in this way becomes the output signal of each photoelectric conversion unit PD_1 and PD_3 in the pixel 200. therefore,
In a plurality of pixels 200 arranged in the same pixel row, the photoelectric conversion unit PD_ arranged in the horizontal direction
1. The output signal of PD_3 has temporal simultaneity.

After the signal level is settled, the drive control unit 102a resets the potential of the floating diffusion FD for the second time in the same manner as in the first embodiment. After a predetermined static time elapses, each vertical signal line 300 ₁ to 300 _2n has a dark signal "Dark_41 ₁ ," for the lower photoelectric conversion units PD_2 and PD_4 in the pixel 200 of each row due to the second reset.
2 ₂ , 4 ₃ , 2, ₄ , 4, ₅ , 2, ₆ , ..., 4 _(2n-1) , 2 _2n "are output at the same time.

After the dark level is settled, the drive control unit 102a switches Vtx_3 and Vtx_4 to the High level at the same timing, and turns on the transfer transistors TX2 ₁ and TX2 ₂ . During the High level period of Vtx_3, the signal charge accumulated in the photoelectric conversion unit PD_4 of the pixel 200 is transferred to the floating diffusion FD ₁ and the Hi of Vtx_4.
During the gh level period, the signal charge accumulated in the photoelectric conversion unit PD-2 is transferred to the floating diffusion FD ₂ . The drive control unit 102a has Vtx_3 and Vtx_4.
Is switched to the Low level at the same timing, and the transfer transistors TX2 ₁ and TX2 ₂ are turned off. After that, the potential level of the floating diffusion FD is settled at a predetermined static time, and becomes a signal level by reading Vtx_3 and Vtx_4. In each of the vertical signal lines 300 ₁ to 300 _2n , the lower photoelectric conversion units PD_2 and PD_ in the pixel 200 of each row
Signal signal for 4 "Sig_4 ₁ , 2 ₂ , 4 _{3 3} , 2 _{4 4} , 4 ₅ 2, ₆ ... 4 _(2n)
-1) , _22n ”is output.

The difference between the dark signal and the signal signal output from each vertical signal line 300 in this way becomes the output signal of each photoelectric conversion unit PD_2 and PD_4 in the pixel 200. therefore,
In a plurality of pixels 200 arranged in the same pixel row, the photoelectric conversion unit PD_ arranged in the horizontal direction
2. The output signal of PD_4 has temporal simultaneity.

According to the second embodiment described above, in addition to the action / effect of (1) obtained in the first embodiment, the following action / effect can be obtained.
The control lines 210, 220, 230, and 240 are commonly provided for a pixel sequence composed of a plurality of pixels 200 arranged in the row direction. Transfer transistor TX1 ₁ , TX1 ₂ , TX2 ₁ , T
X2 ₂ has a control line 220 via the local control lines 262, 261 and 263, 264, respectively.
, 210, 230, 240. The drive control unit 102a has control lines 210 and 230.
The transfer transistors TX1 ₂ and TX2 ₁ are turned on at the same time via the control line 22.
The transfer transistors TX1 ₁ and TX2 ₂ are simultaneously turned on via 0 and 240 to perform the first control. The drive control unit 102a is a transfer transistor TX1 via the control lines 210 and 220.
_2. The TX1 ₁ is turned on at the same time, and the transfer transistors TX2 ₁ and TX2 ₂ are simultaneously turned on via the control lines 230 and 240 to perform the second control. Local control lines 261 to 26
It is also possible to output an output signal having temporal simultaneity in the horizontal direction to pixels 200 having the same circuit configuration including the connection of 4, only by changing the control pulse, or to output simultaneity in the vertical direction. It is also possible to output a signal.

The following modifications are also within the scope of the present invention, and one or more of the modifications can be combined with the above-described embodiment.
(1) The pixel 200 is not limited to the one in which the four photoelectric conversion units PD are arranged. For example, a 2-row 2-column photoelectric conversion unit PD is set as one set, two sets of photoelectric conversion unit PDs are arranged in the vertical direction, and a 4-row 2-column photoelectric conversion unit PD is provided in one pixel 200. Set of photoelectric conversion unit P
D may be arranged in the horizontal direction, and a photoelectric conversion unit PD having 2 rows and 4 columns may be provided in one pixel 200.

(2) The pixel 200 in which the plurality of photoelectric conversion units PD are arranged is not limited to the one provided in the entire area of the image pickup device 101. Pixels 200 may be provided in a part of the image pickup device 101, and pixels in which one photoelectric conversion unit is arranged may be arranged in the other area. In this case, for example, pixel 2
00 can be provided at the position where the G color filter is provided. Further, when the pixels 200 are provided in a part of the region of the image pickup device 101, the color filter may not be provided in the pixels 200. In this case, when the image data for photographing is generated, the image signal at the position of the pixel 200 may be generated by interpolating the image signal from the pixels arranged around the pixel 200.

The present invention is not limited to the above-described embodiment as long as the features of the present invention are not impaired.
Other embodiments considered within the scope of the technical idea of the present invention are also included within the scope of the present invention.

1 ... Digital camera, 2 ... Focus detector, 101 ... Image sensor,
102 ... Body control device, 102a ... Drive control unit, 102b ... Focus detection unit,
102c ... Image processing unit, 200 ... Pixels, 300 ... Vertical signal lines,
210, 220, 230, 240 ... Control line,
211, 221, 251, 252, 253, 254, 261, 262, 263, 264 ...
Local control line,
FD ... Floating diffusion, TX1, TX2 ... Transfer transistor,
PD ... photoelectric conversion unit, RST ... Reset transistor

Claims (6)

A first photoelectric conversion unit, a second photoelectric conversion unit, a third photoelectric conversion unit, and a fourth photoelectric conversion unit that photoelectrically convert light transmitted through a microlens to generate electric charges.
A first storage unit that stores the electric charge generated by the first photoelectric conversion unit and the electric charge generated by the second photoelectric conversion unit, and
A second storage unit that stores the electric charge generated by the third photoelectric conversion unit and the electric charge generated by the fourth photoelectric conversion unit, and the second storage unit.
A first transfer unit that transfers the electric charge generated by the first photoelectric conversion unit to the first storage unit, and
A second transfer unit that transfers the electric charge generated by the second photoelectric conversion unit to the first storage unit, and
A third transfer unit that transfers the electric charge generated by the third photoelectric conversion unit to the second storage unit, and a third transfer unit.
A fourth transfer unit that transfers the electric charge generated by the fourth photoelectric conversion unit to the second storage unit, and a fourth transfer unit.
A first control line for controlling the first transfer unit,
A second control line for controlling the second transfer unit,
A third control line for controlling the third transfer unit,
A fourth control line for controlling the fourth transfer unit,
An image sensor comprising. A first photoelectric conversion unit, a second photoelectric conversion unit, a third photoelectric conversion unit, and a fourth photoelectric conversion unit that photoelectrically convert light transmitted through a microlens to generate electric charges.
A first storage unit that stores the electric charge generated by the first photoelectric conversion unit and the electric charge generated by the third photoelectric conversion unit, and
A second storage unit that stores the electric charge generated by the second photoelectric conversion unit and the electric charge generated by the fourth photoelectric conversion unit, and
A first transfer unit that transfers the electric charge generated by the first photoelectric conversion unit to the first storage unit, and
A second transfer unit that transfers the electric charge generated by the second photoelectric conversion unit to the second storage unit, and
A third transfer unit that transfers the electric charge generated by the third photoelectric conversion unit to the first storage unit, and
A fourth transfer unit that transfers the electric charge generated by the fourth photoelectric conversion unit to the second storage unit, and a fourth transfer unit.
A first control line for controlling the first transfer unit,
A second control line for controlling the second transfer unit,
A third control line for controlling the third transfer unit,
A fourth control line for controlling the fourth transfer unit,
An image sensor comprising. In the image pickup device according to claim 1 or 2 ,
The first control line, the second control line, the third control line, and the fourth control line are provided in the first direction.
The first photoelectric conversion unit and the fourth photoelectric conversion unit are provided side by side in a second direction intersecting the first direction.
The second photoelectric conversion unit and the third photoelectric conversion unit are image pickup devices provided side by side in the second direction. The image pickup device according to any one of claims 1 to 3 .
The first control line and the fourth control line are provided in common.
The second control line and the third control line are image pickup devices provided in common. The image pickup device according to any one of claims 1 to 3 .
The first control line and the third control line are provided in common.
The second control line and the fourth control line are image pickup devices provided in common. The image pickup device according to any one of claims 1 to 5 .
An image generator that generates image data based on the signal output from the image sensor,
An image pickup device equipped with.

Images