JP6469046B2 - Vertical wafer boat - Google Patents
Vertical wafer boat Download PDFInfo
- Publication number
- JP6469046B2 JP6469046B2 JP2016140126A JP2016140126A JP6469046B2 JP 6469046 B2 JP6469046 B2 JP 6469046B2 JP 2016140126 A JP2016140126 A JP 2016140126A JP 2016140126 A JP2016140126 A JP 2016140126A JP 6469046 B2 JP6469046 B2 JP 6469046B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- shelf
- silicon wafer
- support
- wafer boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 235000012431 wafers Nutrition 0.000 claims description 162
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 69
- 229910052710 silicon Inorganic materials 0.000 claims description 69
- 239000010703 silicon Substances 0.000 claims description 69
- 239000002245 particle Substances 0.000 description 26
- 230000002093 peripheral effect Effects 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000012795 verification Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67383—Closed carriers characterised by substrate supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Description
本発明は、縦型ウエハボートに関し、例えば半導体デバイスの製造工程で使用される縦型減圧CVD装置において、シリコンウエハを保持する縦型ウエハボートに関する。 The present invention relates to a vertical wafer boat, and more particularly to a vertical wafer boat for holding a silicon wafer in a vertical vacuum CVD apparatus used in a semiconductor device manufacturing process.
処理対象であるシリコンウエハの表面に成膜する場合、化学的気相成長による成膜を行うCVD装置が用いられる。図3に従来の縦型減圧CVD装置30を示す。このCVD装置30は、炉本体31と、炉本体31内に収容され、複数のシリコンウエハWが収容されるプロセスチューブ32と、炉本体31とプロセスチューブ32との間に配置されるヒータ(図示せず)とを備えている。プロセスチューブ32は、高純度石英や炭化珪素(SiC)によって形成され、その内部が加熱されることによって高温の状態が維持されるようになっている。また、プロセスチューブ32は、真空ポンプ(図示せず)に接続され、プロセスチューブ32の内部を所定気圧(例えば1.3kPa)以下に減圧可能となされている。
When a film is formed on the surface of a silicon wafer to be processed, a CVD apparatus that performs film formation by chemical vapor deposition is used. FIG. 3 shows a conventional vertical reduced
前記プロセスチューブ32によって覆われるベース33の中央部には、ボート受け34が設けられ、このボート受け34の上に、縦型ラック状のウエハボート1が配置される。このウエハボート1には、複数のシリコンウエハWが上下方向に所定の間隔を空けて保持されている。また、ウエハボート1の側部には、反応ガスを炉内に導入するためのガス導入管35が配設され、また、炉内の温度を測定する熱電対を内蔵した熱電対保護管36が設けられている。
A
このような縦型減圧CVD装置30においては、ウエハボート1に複数のシリコンウエハWが保持され、炉本体31内に収容される。
次いで、炉内を所定圧(例えば1.3kPa以下)に減圧するとともに、例えば600〜900℃の高温に加熱し、ガス導入管35を介してキャリアガス(H2など)とともにSiH4などの反応性ガス(原料ガス)を炉内に導入することで、シリコンウエハWの表面に多結晶シリコン膜や窒化珪素膜(Si3N4)等の形成が行われる。
In such a vertical reduced
Next, the inside of the furnace is depressurized to a predetermined pressure (for example, 1.3 kPa or less), heated to a high temperature of, for example, 600 to 900 ° C., and reacted with a carrier gas (such as H 2 ) through Si gas 4 through a
従来のウエハボート1は、例えば特許文献1に開示されている。特許文献1に開示されるウエハボート1は、図4に示すように、収納するシリコンウエハWよりも大きい外径を有する上下一対の天板3及び底板4と、それらを連結する複数(図では3本)の支柱2とにより構成されている。尚、天板3及び底板4は、シリコンウエハWと同様に円板状に形成されている。
A conventional wafer boat 1 is disclosed in Patent Document 1, for example. As shown in FIG. 4, a wafer boat 1 disclosed in Patent Document 1 includes a pair of top and
また、図5に一部拡大して示すように、前記支柱2には、シリコンウエハWを支持するための複数の支持溝2aが設けられ、これにより支柱側面から突出した複数の棚板部2bが多段に形成され、その上面にウエハ支持部2b1が形成されている。このウエハ支持部2b1によりシリコンウエハWの周縁部が支持される。
In addition, as shown in a partially enlarged view in FIG. 5, the
しかしながら、前記棚板部2bの上面であるウエハ支持部2b1によりシリコンウエハWを支持すると、ウエハ支持部2bとウエハ周縁部下面とが面接触するため、ウエハ搬入出の際の摺接によってシリコンウエハWの裏面に多数のパーティクルが発生し付着することがあった。
また、シリコンウエハWの表面にも、その上側のシリコンウエハWの裏面で発生したパーティクルが落下し、付着するという課題があった。
また、熱処理の際にシリコンウエハWが加熱されると、図5に示すようにウエハ周縁部に多少の反りが生じ、上方の棚板部2bとの間隔(クリアランスCL)が小さくなり、ウエハ端部が棚板部2b下面に接触することがあった。
However, when the silicon wafer W is supported by the wafer support portion 2b1 which is the upper surface of the
In addition, there is a problem that particles generated on the back surface of the upper silicon wafer W drop and adhere to the surface of the silicon wafer W.
Further, when the silicon wafer W is heated during the heat treatment, as shown in FIG. 5, a slight warpage occurs in the peripheral edge of the wafer, and the distance (clearance CL) from the
前記課題に対し、特許文献2においては、図6に示すように支柱2に形成された棚板部2bのウエハ支持部2b1を水平面に対し傾斜した傾斜面とした縦型ボートが開示されている。
このようにウエハ支持部2b1が傾斜することにより、略水平状態で支持されるシリコンウエハWに対しては、線接触により支持することになる。そのため、パーティクルの発生が抑制される。
また、図示するように棚板部2b全体が傾斜することにより、熱処理の際にシリコンウエハWの端部に多少の反りが生じても、ウエハ端部と上方の棚板部2bとの間隔(クリアランスCL)が大きく確保されるため、ウエハ端部と棚板部2b下面との接触を防止することができる。
In response to the above problem,
As the wafer support portion 2b1 is inclined as described above, the silicon wafer W supported in a substantially horizontal state is supported by line contact. Therefore, the generation of particles is suppressed.
Further, as shown in the drawing, the
しかしながら、近年にあっては、シリコンウエハWの大口径化が進み、シリコンウエハWを略水平な状態に保持することが困難となってきている。
即ち、シリコンウエハWの中央部が自重により下方に撓み、熱処理とは関係なくウエハ周縁部が上方に跳ね上がる状態となる。このようにウエハ周縁部が上方に跳ねると、傾斜したウエハ支持部2b1とウエハ周縁部とが平行となる部分が生じ、線接触ではなく面接触となる。
そのため、摺接によるパーティクルが発生したり、シリコンウエハW全体に対する応力が大きくなり、スリップが発生しやすいという課題があった。
However, in recent years, the diameter of the silicon wafer W has been increased, and it has become difficult to hold the silicon wafer W in a substantially horizontal state.
That is, the center portion of the silicon wafer W is bent downward by its own weight, and the wafer peripheral portion jumps upward regardless of the heat treatment. When the peripheral edge of the wafer bounces in this way, a portion where the inclined wafer support 2b1 and the peripheral edge of the wafer are parallel to each other is generated, and surface contact is made instead of line contact.
For this reason, there are problems that particles are generated due to sliding contact, stress on the entire silicon wafer W is increased, and slip is likely to occur.
本発明は、前記したような事情の下になされたものであり、処理対象のシリコンウエハを多段に設けた棚板部により支持する縦型ウエハボートにおいて、大口径のシリコンウエハであっても、シリコンウエハの撓みを抑制しつつ、ウエハ外周部の反りに対して棚板部との接触のリスクを低減することのできる縦型ウエハボートを提供することを目的とする。 The present invention has been made under the circumstances as described above, and in a vertical wafer boat that supports silicon wafers to be processed by shelf plates provided in multiple stages, even if the silicon wafer has a large diameter, An object of the present invention is to provide a vertical wafer boat capable of reducing the risk of contact with the shelf plate portion against warpage of the outer peripheral portion of the wafer while suppressing the bending of the silicon wafer.
前記課題を解決するためになされた、本発明に係る縦型ウエハボートは、シリコンウエハを搭載するための棚板部が形成された複数本の支柱と、前記支柱の上下端部を固定する天板及び底板とを備えた縦型ウエハボートであって、前記棚板部の上面側と下面側とがボート中心側に向かって下方に傾斜すると共に、その先端部に、上方に突起して前記シリコンウエハの縁部と当接するウエハ支持部が形成されていることに特徴を有する。
尚、前記棚板部の傾斜角度は、1°以上2°以下の範囲内であることが望ましい。
また、前記ウエハ支持部の上面は、水平面状に形成されていることが望ましい。
また、前記棚板部の径方向の長さ寸法は、40mm以上80mm以下の範囲内であって、前記ウエハ支持部の径方向の長さ寸法は、5mm以上10mm以下の範囲内であることが望ましい。
In order to solve the above problems, a vertical wafer boat according to the present invention includes a plurality of support columns on which shelf boards for mounting silicon wafers are formed, and a ceiling for fixing upper and lower ends of the support columns. A vertical wafer boat having a plate and a bottom plate, wherein the upper surface side and the lower surface side of the shelf plate portion are inclined downward toward the boat center side, and protruded upward at the tip portion thereof. It is characterized in that a wafer support portion is formed in contact with the edge portion of the silicon wafer.
In addition, it is desirable that the inclination angle of the shelf board portion is in the range of 1 ° to 2 °.
The upper surface of the wafer support part is preferably formed in a horizontal plane.
Further, the radial length of the shelf plate portion may be in the range of 40 mm to 80 mm, and the radial length of the wafer support portion may be in the range of 5 mm to 10 mm. desirable.
このような構成によれば、棚板部がボート中心側に向かって下方に傾斜しているため、シリコンウエハを保持して熱処理する際に、ウエハ周縁部が上方に反った状態になっても、上方の棚板部との間隔(クリアランスCL)を充分に確保することができ、ウエハ周縁部と棚板部下面との接触を防止することができる。
また、棚板部の先端に、シリコンウエハと当接するウエハ支持部が設けられているため、シリコンウエハの支持位置がウエハ周縁端部よりも径方向内側となり、大径のシリコンウエハの中央が自重によって下方に撓んだとしても、その撓み量を小さく抑制することができる。
また、ウエハ支持部は水平面状とされ、それに対し撓みによって傾斜したシリコンウエハの下面が当接するため、当接部は線接触となり、シリコンウエハへの応力が小さく抑えられることによってスリップの発生を防止することができる。
According to such a configuration, since the shelf plate portion is inclined downward toward the boat center side, even when the silicon wafer is held and heat-treated, the wafer peripheral portion is warped upward. A sufficient distance (clearance CL) from the upper shelf plate portion can be secured, and contact between the wafer peripheral portion and the lower surface of the shelf plate portion can be prevented.
In addition, since the wafer support portion that contacts the silicon wafer is provided at the tip of the shelf plate portion, the support position of the silicon wafer is radially inward from the peripheral edge portion of the wafer, and the center of the large-diameter silicon wafer is self-weighted. Even if it is bent downward, the amount of bending can be reduced.
In addition, the wafer support part has a horizontal plane, and the bottom surface of the silicon wafer tilted by the bending comes into contact with the wafer support part, so that the contact part is in line contact, and the stress on the silicon wafer is suppressed to prevent slipping. can do.
本発明によれば、処理対象のシリコンウエハを多段に設けた棚板部により支持する縦型ウエハボートにおいて、大口径のシリコンウエハであっても、シリコンウエハの撓みを抑制しつつ、ウエハ外周部の反りに対して棚板部との接触のリスクを低減することのできる縦型ウエハボートを得ることができる。 According to the present invention, in a vertical wafer boat that supports silicon wafers to be processed by shelf plates provided in multiple stages, even if the silicon wafer has a large diameter, the outer periphery of the wafer is suppressed while suppressing the deflection of the silicon wafer. Therefore, it is possible to obtain a vertical wafer boat that can reduce the risk of contact with the shelf plate portion against warpage.
以下、本発明に係る縦型ウエハボートの実施形態について図面に基づき説明する。尚、本発明に係る縦型ウエハボートにあっては、既に図3、図4を用いて説明した従来のウエハボートとは、シリコンウエハを支持する棚板部の構成のみが異なるため、その他の構成部分については詳細な説明を省略する。 Embodiments of a vertical wafer boat according to the present invention will be described below with reference to the drawings. The vertical wafer boat according to the present invention differs from the conventional wafer boat already described with reference to FIGS. 3 and 4 only in the configuration of the shelf plate portion that supports the silicon wafer. Detailed description of the components will be omitted.
図1は、本発明の縦型ウエハボート(ウエハボート1)が備える複数の支柱のうち、1本を一部拡大して示す側面図である。
図1に示すように、支柱2の内側には、その長手方向に沿って複数の支持溝2aが所定の間隔を空けて形成されている。また、複数の支持溝2aが形成されることによって板状の棚板部2bが形成されている。棚板部2bの先端には上方に所定の高さh(好ましくはh=0.3mm以上1.0mm以下)で突起するウエハ支持部2b1が形成され、ウエハ支持部2b1は図2に平面図で示すように所定面積を有する水平面状となされている。
シリコンウエハWは、その周縁部下面が、複数の支柱2にそれぞれ形成された前記棚板部2bのウエハ支持部2b1に当接して支持され、ウエハボートに保持される。
FIG. 1 is a partially enlarged side view of one of a plurality of columns provided in a vertical wafer boat (wafer boat 1) according to the present invention.
As shown in FIG. 1, a plurality of support grooves 2 a are formed on the inner side of the
The silicon wafer W is supported on the lower surface of the peripheral edge portion in contact with the wafer support portion 2b1 of the
前記棚板部2bは、その上面側と下面側とが平行な状態で径方向に延設され、ウエハボート中心に向かって下方に傾斜している。この傾斜角度θは、好ましくは1°以上2°以下とされる。これは、傾斜角度θが2°を超えると、シリコンウエハWの搬送、載置時にウエハ支持部2b1上面とシリコンウエハWの周縁下面が接触する虞があるためである。一方、傾斜角度θが1°未満の場合には、シリコンウエハWの変形時(反り発生時)に、その周縁部上面がウエハ支持部2b1下面に接触する虞があるためである。
The
また、前記棚板部2bの径方向の長さ寸法d1は、40mm以上80mm以下に形成されている。この径方向の長さ寸法d1は、支持するシリコンウエハWの径によって最適値が異なる。例えば、シリコンウエハWの径が300mmの場合には、前記寸法d1は80mmとするのが好ましい。このように棚板部2bの径方向の長さを調整し、ウエハ支持部2b1による支持位置を設定することによって、ウエハ支持部2b1の位置がウエハ周縁端部からウエハ径方向内側に寄るため、シリコンウエハWの自重による撓みの変形量を小さくすることができる。
Moreover, the length dimension d1 of the radial direction of the said
また、前記棚板部2bのウエハ支持部2b1は、図2に示すように先端の左右角部が面取りされている。好ましくは面取り幅d3が0.5mm以上2mm以下とされ、2mm以上8mm以下のR面取りがなされている。
また、ウエハ支持部2b1の径方向の長さ寸法d2は、5mm以上10mm以下に形成されている。周方向の幅寸法d4は、支柱2の形状によった所望の長さに形成してよい。
ウエハ支持部2b1の表面は、好ましくは粗面化された状態(表面粗さRaが0.2μm以上0.8μm以下)とされる。この粗面化処理によって、ウエハ裏面へのスクラッチやスリップが抑制され、また、ウエハ支持部2b1のシリコンウエハWへの貼り付きが抑制されるようになっている。
Further, as shown in FIG. 2, the left and right corners of the tip of the wafer support portion 2b1 of the
Further, the length d2 of the wafer support portion 2b1 in the radial direction is 5 mm or more and 10 mm or less. The circumferential width dimension d4 may be formed to a desired length according to the shape of the
The surface of the wafer support 2b1 is preferably roughened (surface roughness Ra is 0.2 μm or more and 0.8 μm or less). By this roughening treatment, scratches and slips on the back surface of the wafer are suppressed, and sticking of the wafer support 2b1 to the silicon wafer W is suppressed.
このように構成されたウエハボート1によれば、棚板部2bがボート中心に向かって下方に傾斜しているため、シリコンウエハWを保持して熱処理する際に、シリコンウエハW周縁部が上方に反った状態になっても、上方の棚板部2bとの間隔(クリアランスCL)を充分に確保することができ、シリコンウエハW周縁部と棚板部2b下面との接触を防止することができる。
また、棚板部2bの先端に、シリコンウエハWと当接するウエハ支持部2b1が設けられているため、シリコンウエハWの支持位置がウエハ周縁端部よりも径方向内側となり、大径のシリコンウエハWの中央が自重によって下方に撓んだとしても、その撓み量を小さく抑制することができる。
また、ウエハ支持部2b1は水平面状とされ、それに対し撓みによって傾斜したシリコンウエハWの下面が当接するため、当接部は線接触となり、シリコンウエハWへの応力が小さく抑えられることによってスリップの発生を防止することができる。
According to the wafer boat 1 configured as described above, since the
Further, since the wafer support portion 2b1 that comes into contact with the silicon wafer W is provided at the tip of the
Further, the wafer support portion 2b1 is formed in a horizontal plane, and the lower surface of the silicon wafer W inclined due to the bending comes into contact with the wafer support portion 2b1, so that the contact portion becomes a line contact, and the stress on the silicon wafer W is suppressed to be small, thereby preventing slip. Occurrence can be prevented.
本発明に係る縦型ウエハボートについて、実施例に基づきさらに説明する。本実施例では、前記実施の形態に示した縦型ウエハボートを製造し、得られたウエハボートの性能を検証した。 The vertical wafer boat according to the present invention will be further described based on examples. In this example, the vertical wafer boat shown in the above embodiment was manufactured, and the performance of the obtained wafer boat was verified.
具体的には、支柱を形成するため、SiC質基材に、シリコンウエハを載置するための複数の支持溝を回転切削具により形成した。
次いで、前記支持溝により形成された棚板部の上面(係止面)をサンドブラスト処理により粗面化した(Ra0.5μm)。
また、得られた支柱を酸洗浄した後、純水による洗浄を行い、乾燥することにより支柱の完成形を得た。また、必要本数の支柱を同様に形成後、これらに天板、底板を組み付け、組み立て式縦型ウエハボートを製造した。
さらに、製造した縦型ウエハボートにより口径300mmのシリコンウエハ50枚を支持し、炉内において750℃で1時間の熱処理を行った。
Specifically, in order to form the support column, a plurality of support grooves for placing the silicon wafer were formed on the SiC base material using a rotary cutting tool.
Next, the upper surface (locking surface) of the shelf plate portion formed by the support grooves was roughened by sandblasting (Ra 0.5 μm).
Moreover, after the obtained support | pillar was acid-washed, it wash | cleaned by the pure water and dried, and the completed form of the support | pillar was obtained. Moreover, after forming the required number of support columns in the same manner, the top plate and the bottom plate were assembled to produce an assembly type vertical wafer boat.
Further, 50 silicon wafers having a diameter of 300 mm were supported by the manufactured vertical wafer boat, and heat treatment was performed in a furnace at 750 ° C. for 1 hour.
実施例1〜8においては、棚板部の好ましい径方向長さ、及びウエハ支持部の径方向長さについて、熱処理後にシリコンウエハ表面に付着したパーティクルの個数(φ300mmシリコンウエハ表面に付着した0.2μm以上のパーティクル個数)並びにシリコンウエハ裏面のスリップの発生状態を見ることにより検証を行った。
表1に実施例1〜8の条件とその検証結果を示す。表1に示す検証結果において、“パーティクル付着個数”の○は、φ300mmシリコンウエハ表面に0.2μm以上のパーティクル付着が認められない状態を示し、△は、微量(φ300mmシリコンウエハ表面に0.2μm以上のパーティクル20個以下)のパーティクル付着が認められた状態を示し、×は、多量(φ300mmシリコンウエハ表面に0.2μm以上のパーティクル20個超50個以下)のパーティクル付着が認められた結果を示す。また、“スリップ発生状態”の○は、スリップが発生しなかった状態を示し、×は、スリップが発生した状態を示す。
In Examples 1 to 8, regarding the preferred radial length of the shelf and the radial length of the wafer support, the number of particles adhering to the silicon wafer surface after the heat treatment (0. 0 mm adhering to the φ300 mm silicon wafer surface). The number of particles of 2 μm or more) and the occurrence of slip on the back surface of the silicon wafer were examined for verification.
Table 1 shows the conditions of Examples 1 to 8 and the verification results. In the verification results shown in Table 1, “circle of particle adhesion number” indicates that no particle adhesion of 0.2 μm or more is observed on the surface of the φ300 mm silicon wafer, and Δ indicates a minute amount (0.2 μm on the surface of the φ300 mm silicon wafer). (The above 20 particles or less) shows the state where particle adhesion was observed, and x indicates the result that a large amount (over 20 particles of 0.2 μm or more and more than 50 particles) was observed on the surface of the φ300 mm silicon wafer. Show. Further, “Slip occurrence state” indicates that no slip has occurred, and “X” indicates that a slip has occurred.
表1に示すように実施例1〜4の結果、特に棚板部の径方向の長さ寸法は、40mm以上80mm以下の場合(ウエハ支持部の径方向長さは7mmに固定)において、パーティクルが付着せず、良好な結果が得られた。
また、実施例5〜8の結果、特にウエハ支持部の径方向の長さ寸法は、5mm以上10mm以下の場合(棚板部の径方向長さは60mmに固定)において、パーティクルが付着せず、良好な結果が得られた。
As shown in Table 1, in the case of the results of Examples 1 to 4, in particular, when the length in the radial direction of the shelf is 40 mm or more and 80 mm or less (the radial length of the wafer support is fixed to 7 mm), the particles Did not adhere, and good results were obtained.
In addition, as a result of Examples 5 to 8, in particular, when the length of the wafer support portion in the radial direction is 5 mm or more and 10 mm or less (the radial length of the shelf plate portion is fixed to 60 mm), particles do not adhere. Good results were obtained.
実施例9〜12においては、棚板部の好ましい傾斜角度について、熱処理後にシリコンウエハ表面に付着したパーティクルの個数並びにスリップの発生状態を見ることにより検証を行った。
表2に棚板部の傾斜角度の条件及び検証結果を示す。表2に示す検証結果において、“パーティクル付着個数”の○は、φ300mmシリコンウエハ表面に0.2μm以上のパーティクル付着が認められない状態を示し、△は、微量(φ300mmシリコンウエハ表面に0.2μm以上のパーティクル20個以下)のパーティクル付着が認められた状態を示し、×は、多量(φ300mmシリコンウエハ表面に0.2μm以上のパーティクル20個超50個以下)のパーティクル付着が認められた結果を示す。また、“スリップ発生状態”の○は、スリップが発生しなかった状態を示し、×は、スリップが発生した状態を示す。
In Examples 9 to 12, the preferred inclination angle of the shelf plate portion was verified by observing the number of particles adhering to the silicon wafer surface after heat treatment and the occurrence of slip.
Table 2 shows the conditions of the inclination angle of the shelf board and the verification results. In the verification results shown in Table 2, “circle of particle adhesion” indicates that no particle adhesion of 0.2 μm or more is observed on the surface of the φ300 mm silicon wafer, and Δ indicates a minute amount (0.2 μm on the surface of the φ300 mm silicon wafer). (The above 20 particles or less) shows the state where particle adhesion was observed, and x indicates the result that a large amount (over 20 particles of 0.2 μm or more and more than 50 particles) was observed on the surface of the φ300 mm silicon wafer. Show. Further, “Slip occurrence state” indicates that no slip has occurred, and “X” indicates that a slip has occurred.
尚、表2に、本実施例に続けて行った比較例の結果を示す。比較例1は、棚板部は傾斜しているが、上方に突起したウエハ支持部を持たない構成である。比較例2は、棚板部は傾斜せず水平であって、先端に上方に突起したウエハ支持部を持つ構成である。比較例3は、棚板部は傾斜せず水平であって、先端に上方に突起したウエハ支持部を持たない構成である。 Table 2 shows the results of a comparative example performed following this example. In Comparative Example 1, the shelf portion is inclined, but the wafer support portion protruding upward is not provided. In Comparative Example 2, the shelf portion is horizontal without being inclined, and has a wafer support portion protruding upward at the tip. In Comparative Example 3, the shelf plate portion is horizontal without being inclined, and does not have a wafer support portion protruding upward at the tip.
表2に示すように実施例9〜12の結果、特に棚板部の傾斜角は、1.0°以上2.0°以下の場合において、パーティクルが付着せず、良好な結果が得られた。
また、比較例1(棚板部が傾斜、支持部は突起せず)では、シリコンウエハの口径が大きいために撓みが大きくなり、棚板部と面接触になり、多量のパーティクル付着とスリップが発生した。比較例2(棚板部は水平、突起した支持部あり)では、スリップは発生しなかったが、多量のパーティクルが付着した。比較例3(棚板部は水平、支持部は突起せず)では、多量のパーティクル付着とスリップが発生した。
As shown in Table 2, as a result of Examples 9 to 12, particularly, when the inclination angle of the shelf portion is 1.0 ° or more and 2.0 ° or less, particles do not adhere and good results are obtained. .
Further, in Comparative Example 1 (the shelf portion is inclined and the support portion is not protruded), the silicon wafer has a large diameter, so that the deflection becomes large, and the shelf portion comes into surface contact, and a large amount of particles adhere and slip. Occurred. In Comparative Example 2 (the shelf portion was horizontal and had a protruding support portion), no slip occurred, but a large amount of particles adhered. In Comparative Example 3 (the shelf portion was horizontal and the support portion did not protrude), a large amount of particle adhesion and slip occurred.
以上の実施例の結果、本発明の構成により、シリコンウエハの撓みを最小にしつつ、シリコンウエハ外周部の反りに対して棚板部との接触のリスクを低減することで、パーティクルの発生を抑制し、且つスリップの発生を防止できることを確認した。 As a result of the above embodiments, the configuration of the present invention suppresses the generation of particles by minimizing the deflection of the silicon wafer and reducing the risk of contact with the shelf portion against the warpage of the outer periphery of the silicon wafer. In addition, it was confirmed that slip can be prevented from occurring.
1 ウエハボート
2 支柱
2a 支持溝
2b 棚板部
2b1 ウエハ支持部
3 天板
4 底板
W シリコンウエハ
DESCRIPTION OF SYMBOLS 1
Claims (5)
前記棚板部の上面側と下面側とがボート中心側に向かって下方に傾斜すると共に、その先端部に、上方に突起して前記シリコンウエハの縁部と当接するウエハ支持部が形成されていることを特徴とする縦型ウエハボート。 A vertical wafer boat comprising a plurality of support columns on which shelf boards for mounting silicon wafers are formed, and top and bottom plates for fixing upper and lower ends of the support columns,
The upper surface side and the lower surface side of the shelf plate portion are inclined downward toward the boat center side, and a wafer support portion that protrudes upward and comes into contact with the edge portion of the silicon wafer is formed at the tip portion thereof. A vertical wafer boat characterized by
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016140126A JP6469046B2 (en) | 2016-07-15 | 2016-07-15 | Vertical wafer boat |
TW106117613A TWI671802B (en) | 2016-07-15 | 2017-05-26 | Vertical wafer boat |
KR1020170084178A KR101978560B1 (en) | 2016-07-15 | 2017-07-03 | Vertical wafer boat |
US15/645,137 US20180019144A1 (en) | 2016-07-15 | 2017-07-10 | Vertical wafer boat |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016140126A JP6469046B2 (en) | 2016-07-15 | 2016-07-15 | Vertical wafer boat |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018011011A JP2018011011A (en) | 2018-01-18 |
JP6469046B2 true JP6469046B2 (en) | 2019-02-13 |
Family
ID=60941307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016140126A Active JP6469046B2 (en) | 2016-07-15 | 2016-07-15 | Vertical wafer boat |
Country Status (4)
Country | Link |
---|---|
US (1) | US20180019144A1 (en) |
JP (1) | JP6469046B2 (en) |
KR (1) | KR101978560B1 (en) |
TW (1) | TWI671802B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102253522B1 (en) * | 2016-02-10 | 2021-05-18 | 가부시키가이샤 코쿠사이 엘렉트릭 | Substrate processing apparatus, substrate holder, loading apparatus, and manufacturing method of semiconductor device |
JP6770461B2 (en) * | 2017-02-21 | 2020-10-14 | クアーズテック株式会社 | Vertical wafer boat |
USD908103S1 (en) | 2019-02-20 | 2021-01-19 | Veeco Instruments Inc. | Transportable semiconductor wafer rack |
USD908102S1 (en) | 2019-02-20 | 2021-01-19 | Veeco Instruments Inc. | Transportable semiconductor wafer rack |
CN110137119B (en) * | 2019-05-21 | 2024-02-13 | 常州时创能源股份有限公司 | Graphite boat |
CN117438351B (en) * | 2023-12-20 | 2024-03-19 | 无锡松煜科技有限公司 | Vertical crystal boat for heat treatment of semiconductor vertical furnace |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0727870B2 (en) * | 1987-12-24 | 1995-03-29 | 東横化学株式会社 | Low pressure vapor deposition method |
JPH04144124A (en) * | 1990-09-17 | 1992-05-18 | Mitsubishi Materials Corp | Wafer boat for vertical thermal treatment furnace |
JPH05234949A (en) * | 1992-02-24 | 1993-09-10 | Tokyo Electron Ltd | Plasma treatment device |
US5492229A (en) * | 1992-11-27 | 1996-02-20 | Toshiba Ceramics Co., Ltd. | Vertical boat and a method for making the same |
JP3245246B2 (en) * | 1993-01-27 | 2002-01-07 | 東京エレクトロン株式会社 | Heat treatment equipment |
JPH08130192A (en) * | 1994-10-31 | 1996-05-21 | Tokyo Electron Ltd | Thermal treatment equipment |
JP2732224B2 (en) * | 1994-09-30 | 1998-03-25 | 信越半導体株式会社 | Wafer support boat |
JPH0982648A (en) * | 1995-09-08 | 1997-03-28 | Kokusai Electric Co Ltd | Vertical boat |
JP3328763B2 (en) * | 1995-10-30 | 2002-09-30 | エヌティティエレクトロニクス株式会社 | Wafer support structure for vertical wafer boat |
JPH09139352A (en) | 1995-11-15 | 1997-05-27 | Nec Corp | Wafer boat for vertical furnace |
KR970053320A (en) * | 1995-12-28 | 1997-07-31 | 김광호 | Wafer support apparatus for vertical diffusion furnace for semiconductor device manufacturing |
JP3507624B2 (en) * | 1996-06-28 | 2004-03-15 | 東京エレクトロン株式会社 | Heat treatment boat and heat treatment equipment |
JPH09251961A (en) * | 1996-03-15 | 1997-09-22 | Toshiba Corp | Heat-treating boat |
JPH1041236A (en) * | 1996-07-25 | 1998-02-13 | M Ii M C Kk | Boat for forming cvd film, and cvd film forming method |
JP2000232151A (en) * | 1999-02-10 | 2000-08-22 | Hitachi Ltd | Wafer boat for vertical furnace |
US6727191B2 (en) * | 2001-02-26 | 2004-04-27 | Integrated Materials, Inc. | High temperature hydrogen anneal of silicon wafers supported on a silicon fixture |
US20020170487A1 (en) * | 2001-05-18 | 2002-11-21 | Raanan Zehavi | Pre-coated silicon fixtures used in a high temperature process |
JP2003197728A (en) * | 2001-12-27 | 2003-07-11 | Aitec:Kk | Cassette for storing substrate |
US7737034B2 (en) * | 2002-06-27 | 2010-06-15 | Hitachi Kokusai Electric Inc. | Substrate treating apparatus and method for manufacturing semiconductor device |
KR100491161B1 (en) * | 2002-11-26 | 2005-05-24 | 주식회사 테라세미콘 | Semiconductor manufacturing system for thermal process |
JP2005005379A (en) * | 2003-06-10 | 2005-01-06 | Shin Etsu Handotai Co Ltd | Method and vertical boat for heat-treating semiconductor wafer |
JP4312204B2 (en) * | 2003-11-27 | 2009-08-12 | 株式会社日立国際電気 | Substrate processing apparatus, substrate holder, and semiconductor device manufacturing method |
JP2005311291A (en) * | 2004-03-26 | 2005-11-04 | Toshiba Ceramics Co Ltd | Vertical-type boat |
KR100840705B1 (en) * | 2004-04-21 | 2008-06-24 | 가부시키가이샤 히다치 고쿠사이 덴키 | Heat treating device |
KR100712756B1 (en) * | 2005-12-20 | 2007-04-30 | 주식회사 실트론 | Boat for heat treatment of wafer |
JP2007201417A (en) * | 2005-12-28 | 2007-08-09 | Tokyo Electron Ltd | Boat for heat treatment and vertical-type heat treatment device |
WO2007131547A1 (en) * | 2006-05-15 | 2007-11-22 | Aixtron Ag | Semiconductor control device for a cvd or rtp process |
JP2008108926A (en) * | 2006-10-26 | 2008-05-08 | Bridgestone Corp | Jig for thermally treating wafer |
JP4380689B2 (en) * | 2006-11-21 | 2009-12-09 | 信越半導体株式会社 | Vertical heat treatment boat and semiconductor wafer heat treatment method using the same |
JP4812675B2 (en) * | 2007-03-30 | 2011-11-09 | コバレントマテリアル株式会社 | Vertical wafer boat |
JP5211543B2 (en) * | 2007-05-01 | 2013-06-12 | 信越半導体株式会社 | Wafer support jig, vertical heat treatment boat equipped with the same, and method for manufacturing wafer support jig |
TW201303616A (en) * | 2011-07-11 | 2013-01-16 | Ping-Liang Lin | Intelligent learning module and method thereof |
US9153466B2 (en) * | 2012-04-26 | 2015-10-06 | Asm Ip Holding B.V. | Wafer boat |
KR101715193B1 (en) * | 2015-07-20 | 2017-03-10 | 주식회사 유진테크 | Apparatus for processing substrate |
US20170110353A1 (en) * | 2015-10-20 | 2017-04-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer boat, annealing tool and annealing method |
-
2016
- 2016-07-15 JP JP2016140126A patent/JP6469046B2/en active Active
-
2017
- 2017-05-26 TW TW106117613A patent/TWI671802B/en active
- 2017-07-03 KR KR1020170084178A patent/KR101978560B1/en active IP Right Grant
- 2017-07-10 US US15/645,137 patent/US20180019144A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW201804518A (en) | 2018-02-01 |
JP2018011011A (en) | 2018-01-18 |
US20180019144A1 (en) | 2018-01-18 |
TWI671802B (en) | 2019-09-11 |
KR101978560B1 (en) | 2019-05-14 |
KR20180008292A (en) | 2018-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6469046B2 (en) | Vertical wafer boat | |
JP4669476B2 (en) | Holder for supporting wafers during semiconductor manufacturing | |
JP4453984B2 (en) | Substrate support / transport tray | |
JP3586031B2 (en) | Susceptor, heat treatment apparatus and heat treatment method | |
JP5051909B2 (en) | Vertical wafer boat | |
JPH0758041A (en) | Susceptor | |
JP6368282B2 (en) | Wafer boat and manufacturing method thereof | |
KR20030063448A (en) | Susceptor pocket profile to improve process performance | |
KR20010041263A (en) | Slip Free Vertical Rack Design Having Rounded Horizontal Arms | |
JP4637475B2 (en) | Semiconductor substrate transfer system using removable susceptor, and semiconductor substrate transfer method | |
JP4003906B2 (en) | Silicon single crystal semiconductor wafer heat treatment jig and silicon single crystal semiconductor wafer heat treatment apparatus using the same | |
JP2000150402A (en) | Substrate supporting jig | |
JP2002033284A (en) | Wafer holder for vertical cvd | |
WO2005124848A1 (en) | Heat treatment jig and semiconductor wafer heat treatment method | |
TW201907050A (en) | Carrier disk, method for manufacturing epitaxial substrate, and epitaxial substrate | |
JP5130808B2 (en) | Wafer heat treatment jig and vertical heat treatment boat equipped with the jig | |
JP2005203648A (en) | Vertical type boat for heat treating silicon wafer and heat treating method | |
JP7268208B2 (en) | Substrate processing equipment for wafers | |
JP3507977B2 (en) | Vertical wafer boat | |
JP4105640B2 (en) | Heat treatment method | |
JP5087375B2 (en) | Method for manufacturing silicon carbide semiconductor device | |
JP4812675B2 (en) | Vertical wafer boat | |
JP2018041778A (en) | Single epitaxial wafer manufacturing apparatus and manufacturing method of epitaxial wafer | |
WO2011074436A1 (en) | Substrate and method for manufacturing same | |
JP6322159B2 (en) | Wafer boat and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180611 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181219 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190108 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190115 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6469046 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |