JP6157293B2 - Touch panel and method for manufacturing touch panel - Google Patents

Description

  The present invention relates to a touch panel formed integrally with a cover sheet and a technique suitable for use in a method for manufacturing a touch panel.

  The touch panel is a component of an input device that allows the operator to touch a transparent surface on the display screen with a finger or a pen to detect a touched position and input data. Intuitive input is possible. For this reason, in recent years, it has come to be frequently used in operation units of various electronic devices such as mobile phones, portable information terminals, and car navigation systems.

The touch panel can be used as an input device by being bonded onto a display screen of a flat display device such as a liquid crystal panel. There are various types of touch panel detection methods such as a resistance type, a capacitance type, an ultrasonic type, and an optical type, and their structures are various.
Capacitive touch panels can be broadly classified into surface types and projection types. It is difficult for the surface mold to detect two or more contact points simultaneously. The projection type can simultaneously detect two or more contact points. The projection type is an electrode plate for a capacitive touch panel, a first transparent electrode pattern layer, a first insulating layer, a second transparent electrode pattern layer, a metal electrode pattern layer serving as a terminal electrode, and a first electrode on a transparent substrate. Each of the two insulating layers generally has a laminated structure formed in this order.

In addition to the touch panel independent type, there is a cover glass integrated type in which the projected capacitive touch panel is used by being superimposed on the display screen of the flat display device.
That is, in the touch panel independent type, an independent touch panel is bonded to the display surface side of the flat display device through an air gap, and a decorative pattern such as a frame is provided on the front surface to protect the surface. A transparent cover sheet represented by a cover glass (front plate) is provided (see Patent Document 1).
On the other hand, in the cover glass integrated type, a cover glass integrated touch panel is bonded to the display surface side of the flat display device through a similar air gap. The orientation of the electrodes, terminals, wiring, etc. that make up the touch panel is such that the position of the substrate that directly supports the pattern is reversed between the touch panel independent type and the cover glass integrated type. Is the opposite.

  The electrode structure of the projected capacitive touch panel is a plurality of sensor electrodes that are two-dimensionally arranged on the same plane of the transparent cover sheet as shown in the example of the transparent cover sheet integrated type represented by the cover glass integrated type. A transparent conductive film pattern; a jumper portion that electrically connects the transparent conductive film patterns; an insulating portion that prevents an electrical short circuit between layers in the jumper portion; and a wiring portion that leads wiring from the sensor electrode to the terminal portion Consists of A transparent conductive film such as ITO (indium tin oxide) is used for the sensor electrode. On the other hand, a metal material having better conductivity than ITO is used for the jumper portion. In such a touch panel, the structure of the insulating part and the jumper part for connecting the sensor electrodes regularly arranged on the same plane in three dimensions is indispensable.

  As the wiring for the jumper part, etc., a material having excellent conductivity such as Cu is used (Patent Document 2).

  Further, since the jumper portion is located in the operation plane area which is the display area, there is a demand for reducing the reflectance of this portion and improving the visibility of the display device. In Patent Document 3, as shown in FIG. 6, it is shown that the reflectance is reduced with a film containing molybdenum.

JP2012-084025A JP 58-166431-A JP2013-020347A

  However, as shown in Patent Document 2, when wiring such as a jumper portion is formed of a metal film such as copper, there is a problem in that the visibility of the touch panel is affected. Further, as shown in Patent Document 3, when formed from molybdenum or aluminum, there is a demand to improve this because the resistivity is too large for ITO. Furthermore, there is a strong demand to improve the reflectance in the visible light region.

The present invention has been made in view of the above circumstances, and intends to achieve the following object.
1. In the jumper wire, the conductivity and reflectance should be in the preferred ranges at the same time.
2. Reduce the wavelength dependence and make the reflectance uniform over the entire visible light range.
3. Maintain the same characteristics as before in terms of etching characteristics, sheet resistance, and adhesion to the substrate.

The touch panel of the present invention is a capacitive touch panel that is arranged on a display panel and operated by touching an operation surface,
A transparent substrate;
A plurality of X electrodes formed in the X direction on the back side of the operation surface of the transparent substrate, and a plurality of Y electrodes formed in the Y direction perpendicular to the X direction;
Have
The plurality of X electrodes and the plurality of Y electrodes are
A plurality of transparent electrodes formed on the same surface on the back side;
A jumper wire that three-dimensionally connects either the transparent electrode of the adjacent X electrode or the transparent electrode of the adjacent Y electrode at an intersection where the X electrode and the Y electrode intersect with each other via an insulating portion; Have
The jumper wire has a first layer connected to the transparent electrode, and a second layer laminated on the first layer,
The first layer is made of a metal oxide film, the second layer is made of a metal film, and the main metal of the first layer and the second layer contains copper,
The said subject was solved by the reflectance in the visible light region in said 1st layer being below half of the reflectance of said 2nd layer.
The specific resistance of the first layer of the present invention is preferably higher than that of the second layer.
The film thickness of the first layer of the present invention is preferably 50 nm or more and 400 nm or less.
The specific resistance of the first layer of the present invention is preferably 1.0 × 10 ^{4 to} 1.0 × 10 ⁶ μΩcm.
The thickness of the second layer of the present invention is preferably 200 nm or more and 10,000 nm or less.
The specific resistance of the second layer of the present invention is preferably 1.5 μΩcm or more and 3 μΩcm or less.
When the first layer of the present invention is a copper alloy oxide film , it preferably contains nickel.
The second layer of the present invention is preferably made of copper or a copper alloy containing copper and nickel.
The jumper wire of the present invention preferably has a third layer made of a third metal film laminated on the second layer.
The third layer of the present invention is preferably made of copper or a copper alloy.

The touch panel of the present invention is a capacitive touch panel that is arranged on a display panel and operated by touching an operation surface,
A transparent substrate;
A plurality of X electrodes formed in the X direction on the back side of the operation surface of the transparent substrate, and a plurality of Y electrodes formed in the Y direction perpendicular to the X direction;
Have
The plurality of X electrodes and the plurality of Y electrodes are
A plurality of transparent electrodes formed on the same surface on the back side;
A jumper wire that three-dimensionally connects either the transparent electrode of the adjacent X electrode or the transparent electrode of the adjacent Y electrode at an intersection where the X electrode and the Y electrode intersect with each other via an insulating portion; Have
The jumper wire has a first layer connected to the transparent electrode, and a second layer laminated on the first layer,
The first layer is made of a metal oxide film, the second layer is made of a metal film, and the main metal of the first layer and the second layer contains copper,
The reflectance in the visible light region in the first layer is less than half of the reflectance in the second layer, so that the conductivity in the jumper wire is ensured, and the reflectance in the intersection is viewed from the viewing side. In addition, it is possible to uniformly suppress the entire wavelength range of visible light.

In the present invention, the specific resistance of the first layer is higher than that of the second layer, the film thickness of the first layer is 50 nm or more and 400 nm or less, and the specific resistance of the first layer is 1 0.0 × 10 ^{4 to} 1.0 × 10 ⁶ μΩcm, the film thickness of the second layer is 200 nm or more and 10,000 nm or less, and the specific resistance of the second layer is 1. 5 μΩcm or more and 3 μΩcm or less, or when the first layer is a copper alloy oxide film , it contains nickel, or the second layer contains copper, or copper and nickel The copper alloy can be made of any of these, and by either of these, the resistance and reflectance at the intersection can be brought into a desired state, and the adhesion of the jumper wire can be improved.

  The jumper wire of the present invention has a third layer made of a third metal film laminated on the second layer, or the third layer is made of copper or a copper alloy, so It becomes easy to maintain the property.

  According to the present invention, since the intersection is configured as described above, it has good conductivity in the jumper wire, and at the same time, realizes a preferable reflectance in the visible light region and improves the visibility, and visible light. It is possible to maintain the reflectance uniformity over the entire area and to ensure the color accuracy.

It is a schematic plan view which shows the outline of one Embodiment of the touchscreen which concerns on this invention. It is a schematic diagram which shows a display apparatus provided with one Embodiment of the touchscreen which concerns on this invention. It is an expanded sectional view showing the intersection part neighborhood in one embodiment of the touch panel concerning the present invention. It is a conceptual diagram which shows the measuring method in one Embodiment of the touchscreen which concerns on this invention. It is a graph which shows the measurement result in one Embodiment of the touchscreen which concerns on this invention. It is a graph which shows the measurement result in one Embodiment of the touchscreen which concerns on this invention. It is a graph which shows the measurement result in one Embodiment of the touchscreen which concerns on this invention. It is a graph which shows the measurement result in one Embodiment of the touchscreen which concerns on this invention. It is a graph which shows the measurement result in one Embodiment of the touchscreen which concerns on this invention. It is a graph which shows the measurement result in one Embodiment of the touchscreen which concerns on this invention. It is an expanded sectional view showing the intersection neighborhood in other embodiments of the touch panel according to the present invention. It is a schematic diagram which shows the other example of the intersection part vicinity in other embodiment of the touchscreen which concerns on this invention.

Hereinafter, an embodiment of a touch panel according to the present invention will be described with reference to the drawings.
FIG. 1 is a schematic plan view showing a touch panel in the present embodiment, FIG. 2 is a cross-sectional view showing a display device including the touch panel, and FIG. 3 is an enlarged cross-sectional view showing the cross-sectional structure of FIG.

    As shown in FIGS. 1 and 2, the touch panel 10 according to the present embodiment is a capacitive touch panel that is arranged on a display panel 2 such as a liquid crystal or an organic EL and is operated by touching an operation surface 10A. The transparent substrate 11, the plurality of X electrodes 12X formed in the X direction on the back surface 11b side of the operation surface 10A of the transparent substrate 11, and the plurality of Y electrodes 12Y formed in the Y direction perpendicular to the X direction, Have

  As shown in FIGS. 1 to 3, the capacitive touch panel in the present embodiment extends, for example, in the Y direction on the back surface 11 b opposite to the viewing side of the transparent substrate 11 and intersects the Y direction. A plurality of X electrodes arranged in parallel in the X direction at a predetermined arrangement pitch, and a plurality of Y electrodes intersecting with the plurality of X electrodes and extending in the X direction and arranged in parallel in the Y direction at a predetermined arrangement pitch Electrode. As the transparent substrate 11, for example, a transparent substrate such as glass or heat-resistant transparent plastic is used. The plurality of X electrodes 12X and the plurality of Y electrodes 12Y are formed of a highly transmissive material, for example, a transparent conductive material such as ITO (Indium Tin Oxide).

  A plurality of X electrodes 12X and a plurality of Y electrodes 12Y have a plurality of transparent electrodes 12 formed on the same surface on the back surface 11b side, and an intersecting portion 14 where the X electrodes 12X and the Y electrodes 12Y intersect with each other via an insulating portion 13. The jumper wire 15 three-dimensionally connects either the adjacent X electrode 12X or the transparent electrode 12 of the adjacent Y electrode 12Y.

  An area where the plurality of Y electrodes 12Y and the X electrodes 12X are arranged is an effective touch area 16, and each of the plurality of Y electrodes and a plurality of X electrodes are arranged around the effective touch area 16 as shown in FIG. A plurality of wirings 17 that lead the wiring from each of the electrodes to the peripheral part in the vertical and horizontal directions and reach the terminal part (not shown) are arranged.

  Each of the plurality of X electrodes is formed by an electrode pattern in which a thin line portion 12Xa and a pad portion 12Xb having a width wider than the width of the thin line portion 12Xa are alternately arranged in the Y direction. Each of the plurality of Y electrodes is formed with an electrode pattern in which a thin line portion 12Ya and a pad portion 12Yb having a width wider than the width of the thin line portion 12Ya are alternately arranged in the X direction.

  When viewed in plan, the pad portion 12Yb of the Y electrode 12Y is disposed between the thin wire portions 12Xa of the two adjacent X electrodes 12X, and the pad portion 12Xb of the X electrode 12X is the two adjacent Y electrodes 12Y. It arrange | positions between thin wire | line parts 12Ya. These electrodes 12 are commonly referred to as diamond structures. The pad portion 12Xb of the X electrode 12X and the pad portion 12Xb of the Y electrode 12Y have a side length of about 100 μm to 600 μm. The pit margin width between the X electrode 12X and the Y electrode 12Y can be 2 mm to 8 mm, 3 mm to 7 mm.

  Moreover, the insulating part 13 is comprised by the film | membrane which consists of SiO, SiN, SiON, or resin, for example. The width | variety of the insulation part 13 can be 50 micrometers or more, 100 micrometers or more, and 150 micrometers-350 micrometers or less.

  In the crossing portion 14, the jumper wire 15 and the wiring portion (wiring) 17 which are the thin wire portions 12Ya of the Y electrode 12Y have a multi-layer structure having the same configuration as shown in FIGS. The reflectivity when viewed from the viewing side at the interface with the portion 13 is reduced to optimize the reflection characteristics, and the conductivity of the jumper wire 15 and the wiring portion 17 is increased.

  As shown in FIG. 3, the jumper wire 15 is laminated in order from the transparent substrate 11 side, at least a copper oxide film (first layer) C1, a copper film (second layer) C2, and a copper nickel (third layer) C3. It has a structure. The line width of the thin wire portion 12Xa and the jumper wire 15 is 0.5 μm to 10 μm, and can be 1 μm to 8 μm, 2 μm to 5 μm.

  The first layer C1 and the second layer C2 mainly include, for example, the same metal that is made of copper, and the first layer C1 made of the first metal oxide film that is an oxide of the copper, and made of copper or a copper alloy. It consists of a second layer C2 as a conductive layer. The first layer C1 and the second layer C2 can also contain nickel, for example. In the first layer C1 and the second layer C2, the reflectance of the first layer C1 is lower than that of the second layer C2. Specifically, the reflectance of the first layer C1 is the same as the reflectance of the second layer C2. The oxygen content in the first layer C1 is higher than that in the second layer MC2, and the specific resistance in the first layer C1 is higher than that in the second layer C2.

  The first layer C1 can be made of an oxide film of copper or an alloy containing mainly copper. In the present embodiment, a single-layer oxide film made of copper or a copper alloy oxide film containing nickel can be used. The first layer C <b> 1 can also serve as a base layer that improves the film formability and adhesion of the second layer C <b> 2 to the insulating portion 13 and the transparent electrode 12.

The second layer C2 can be made of copper or an alloy containing mainly copper. In the present embodiment, a single layer film made of copper, a copper alloy containing nickel, or a configuration in which a copper nickel layer and a copper single layer are laminated, and further, a copper nickel layer, a copper single layer, and a copper nickel layer It can be set as the structure laminated | stacked.
The first layer C1 and the second layer C1 maintain good conductivity as a jumper wire, and reduce the reflectance when viewed from the viewing side due to the light absorption effect, as will be described later.

The third layer C3 can be a film made of an alloy mainly containing copper, which is the same as the metal contained in the first layer C1 and the second layer C2. In this embodiment, it can consist of a copper alloy containing nickel. The third layer C3 is a cap layer that protects the first layer C1 and the second layer C2.
By making the film configuration of the jumper wire 15 in this way, it is possible to reduce the reflectance when viewed from the viewing side due to the light absorption effect.

The characteristics such as the film thickness of the first layer C1 can be set to be raised as an example. Here, the film thickness of the second layer C2 was set to 200 nm, and the film thickness and oxygen content of the first layer C1 were changed. In the table, O2 indicates the flow rate of oxygen gas during film formation, and indicates the amount of oxygen content in the film. R% represents the average reflectance in the visible range.

Here, the sheet resistance Rs 0.2 [Ω / B] or less is shown as the electrical characteristics of the laminated jumper wires 15.
FIG. 4 is a conceptual diagram showing an example of measurement of film characteristics on the jumper wire 15 in the present embodiment and showing sheet resistance evaluation and reflectance evaluation. For comparison, measurement was also performed without the first layer C1.

The spectral reflectance can be measured using a commercially available spectrophotometer. In the measurement, as shown in FIG. 4, the measurement sample film is irradiated with the spectrally irradiated light from the light source (monochromator) L1, and the specularly reflected light is received by the measuring device LS to measure the light intensity. . The spectral reflectance is measured by continuously changing the wavelength of the spectral irradiation light from the monochromator L1 in the entire visible light range of the measurement wavelength of 380 nm to 780 nm.
Here, a reference in measurement is a predetermined film having a known absolute reflectance. That is, a reference of 100% in each subsequent measurement sample is a value obtained by dividing, for example, the intensity obtained with an aluminum single layer film by a known absolute reflectance.

As shown in FIGS. 5 and 6, the film thickness of the first layer C1 is set to 50 nm or more and 400 nm or less, more preferably 200 to 400 nm, whereby the reflectance of the first layer C1 is changed to the reflection of the second layer C2. It can be less than half of the rate. Further, when the first layer C1 is in the low oxygen content state (low oxidation degree) and the upper limit film thickness is set, the reflectance can be further reduced, and the first layer C1 is in the high oxygen content state (high oxidation degree) and the film When the thickness is 200 nm, the reflectance of the second layer C2 can be made ¼ or less.
Moreover, since the specific resistance of the first layer C1 is 1.0 × 10 ^{4 to} 1.0 × 10 ⁶ μΩcm, it can sufficiently function as a conductor.
By setting the film thickness of the first layer C1 within the above range, it is possible to prevent the resistance from being increased, unevenness that cannot be ignored on the film surface during film formation, and the film formation time from becoming too long. it can.

  Further, as shown in FIG. 7, the first layer C1 is in a low oxygen content state (low oxidation degree), and the reflectance of the second layer C2 is 5 nm with a film thickness of 200 nm and a film thickness of 400 nm at a wavelength of 480 nm in the visible light region. / 7 or less, 45/95 or less of the reflectance of the second layer C2 at a film thickness of 200 nm at a wavelength of 680 nm, and the reflectance of the second layer C2 at a film thickness of 400 nm at a wavelength of 680 nm. Of 25/95 or less.

  Furthermore, as shown in FIG. 9, the first layer C1 has a predetermined film thickness of, for example, a film thickness of 50 nm and a film thickness of 200 nm. Can be controlled. Note that the horizontal axis in FIG. 9 represents the flow rate ratio (O 2 / Ar ratio [%]) of the oxygen gas to the argon gas of the atmospheric gas supplied to the film formation atmosphere.

Similarly, as shown in FIG. 10, when the first layer C1 has a predetermined film thickness of, for example, a film thickness of 50 nm and a film thickness of 200 nm, and its oxygen concentration is changed, the atmosphere gas argon supplied to the film formation atmosphere When the flow rate ratio of oxygen gas to gas (O2 / Ar ratio [%]) is greater than 45, the value of the specific resistance becomes substantially constant. That is, even if the oxygen concentration is changed, the optical characteristics can be set without worrying about the specific resistance. Similarly, the horizontal axis in FIG. 10 represents the flow rate ratio of oxygen gas to argon gas in the atmospheric gas supplied to the film formation atmosphere.
In this case, as the flow rate ratio of the oxygen gas is increased from 45, the transmittance of the first layer C1 increases. That is, it can be seen that the electrical film quality (resistance) of the oxide film is substantially constant even when the oxidation proceeds.

  Further, by setting the film thickness of the second layer C2 to 200 nm to 10000 nm, the film thickness at the time of film formation cannot be ignored because the film thickness is excessively large even though the resistance as the jumper line 15 does not change. It is possible to prevent the occurrence and the film formation time from becoming too long.

  Further, as shown in FIG. 8, the first layer C1 is in a high oxygen content state (high oxidation degree), and at a wavelength of 380 nm in the visible light region, the film thickness is 100 nm and the reflectance of the second layer C2 is 20/35 or less. At a wavelength of 380 nm, the reflectance of the second layer C2 can be 18/35 or less at a film thickness of 200 nm, and at a wavelength of 480 nm, the reflectance of the second layer C2 can be 21/51 at a film thickness of 100 nm. At a wavelength of 480 nm, the film thickness of 200 nm can be 18/50 or less of the reflectance of the second layer C2, and at a wavelength of 580 nm, the film thickness of 100 nm can be 40 nm of the reflectance of the second layer C2. / 80 or less, at a wavelength of 580 nm, the film thickness of 200 nm can be 24/80 or less of the reflectance of the second layer C2, and at a wavelength of 680 nm, The reflectance of the second layer C2 can be 55/95 or less at a wavelength of 680 nm, and the reflectance of the second layer C2 can be 15/95 or less at a wavelength of 680 nm. The reflectance of the second layer C2 can be 60/95, and at a wavelength of 780 nm, the film thickness can be 200 nm and the reflectance of the second layer C2 can be 10/95 or less.

  As shown in FIGS. 7 and 8, the multilayer film constituting this embodiment suppresses the reflectance in the entire visible light region having a measurement wavelength of 380 nm to 780 nm and is visible as compared with the conventional multilayer film. The reflectance can be set to a substantially uniform value over the entire light region. At the same time, since it has good conductivity, the width of the jumper wire 15 can be made smaller than when molybdenum or the like is used, and the size in plan view can be reduced to improve the visibility to the display device. it can.

  In this embodiment, when forming a multilayer film containing copper and nickel by a sputtering method, a sputtering target is prepared with two elements of copper-nickel, and a predetermined amount of oxygen gas and argon are used when forming an oxide film. Reactive sputtering that introduces an inert gas or the like is possible without adding a source power source.

  Specifically, in the film formation of the copper oxide multilayer film C1, the gas flow rate among the film formation conditions is argon: oxygen flow rate of 200: 320 (sccm) or 200: 2280 (sccm). In forming the copper film C2, it is preferable to change it to 200: 0 (sccm).

  Furthermore, in this embodiment, the specific resistance of the copper oxide film (first layer) C1 and the copper film (second layer) C2 is from the side connected to the transparent electrode 12 to the copper nickel film (third layer) C3 side. In this case, the specific resistance may be continuously changed according to the thickness without having two different specific resistance values. it can.

An example of the manufacturing method of the touch panel of this embodiment is demonstrated.
In the touch panel manufacturing method of the present embodiment, the process of forming the transparent electrode 12 that is the sensor conductive film pattern on the transparent substrate 11, the process of forming the insulating part 13, the jumper wire 15 and the wiring part 17 are collectively performed. And forming a process.

  Moreover, the manufacturing method of the touch panel of this embodiment may perform the process of forming the jumper wire 15 and the wiring part 17 collectively, the process of forming the insulating part 13, and the process of forming the transparent electrode 12 in this order. it can.

Furthermore, as another example of the touch panel manufacturing method, a step of patterning the wiring portion 17, a step of forming the transparent electrode 12, a step of forming the insulating portion 13, and a step of forming the jumper wire 15 are performed. Can also have.
In these methods, a uniform protective film 13A made of a transparent resin or the like can be applied and formed as a final step.

  The manufacturing method of the touch panel according to the present embodiment will be described in more detail. (A) A transparent electrode 12 pattern as a sensor electrode is subjected to photolithography on the premise that it is aligned with a pattern position in a previous process after ITO film formation, for example. Photoresist patterning is carried out by the method, and subsequent etching and residual resist removal are performed. Next, (b) a photosensitive resin material for forming the insulating portion 13 is applied, and a pattern is formed by aligning with the intersecting portion 14 by photolithography. Next, (c) a multilayer film having the same structure as described above for forming the jumper line 15 and the wiring portion 17 is performed, and a photolithography method including application of photoresist, exposure, and development, and subsequent etching and residue. It can be formed in a lump after removing the resist.

  FIG. 11 is an enlarged cross-sectional view showing a crossing portion of a touch panel according to another embodiment of the present invention.

In the present invention, in the example shown in FIG. 3, only the portion corresponding to the intersection 14 is formed in the insulating portion 13, but in the example shown in FIG. 11, the insulating portion 13 is provided on the entire surface of the transparent substrate (glass) 11. A through hole 13b is provided in the portion 14, and the first layer C1 and the transparent electrode 12 are connected in this through hole.
In such a configuration, after forming an ITO pattern to be an electrode, a film to be an insulating portion 13 is formed on the entire surface of the substrate 11, and a through hole 13b is formed in alignment with the intersecting portion 14, and then a jumper is formed. The line 15 and the wiring part 17 are configured as a multilayer film.

In the present invention, good conductivity is maintained by setting the reflectance of the first layer C1, the resistance value of the first layer C1, and the film thicknesses of the first layer C1 and the second layer C2 as described above. In addition, a low reflectance in the visible light region can be realized. Specifically, the following ranges can be selected and combined.
Resistance value of first layer C1 (oxygen content): 1.0 × 10 ^{4 to} 1.0 × ⁶ μΩcm
Reflectivity of first layer C1: 35% or less (λ = 300 to 800 nm Average)
Film thickness of the first layer C1: 50 nm to 400 nm
Film thickness of the second layer C2: 200 nm to 10000 nm

Furthermore, the specific resistance of the second layer C2 can be set to 1.5 μΩcm to 3 μΩcm.
Here, the second layer C2 is
When the film is formed by sputtering,
Film thickness: 200 nm to 1000 nm
Sheet resistance Rs range: 0.015 to 0.15 Ω / port Thickness when deposited and plated Film thickness: 1000 nm to 10000 nm
The range of the sheet resistance Rs can be set to 0.0015 to 0.3Ω / mouth.

  Furthermore, in the present invention, as shown in FIG. 12, the first layer C1 made of CuOx, the second layer C2 made of Cu, and the third layer C3 made of CuNi are laminated, and the second layer C2 In order to prevent oxidation from CuOx on the C1 side, a first layer side second layer C4 made of CuNi can be provided. Thereby, the oxidation of the second layer made of Cu can be prevented, and fluctuations in electrical characteristics can be prevented.

この結果から、成膜温度によって、シート抵抗を制御することが可能となることがわかる。 Further, in the first layer C1, the film formation temperature was changed, and the binary oxygen concentration and the sheet resistance Rs for each film thickness were measured.

From this result, it is understood that the sheet resistance can be controlled by the film forming temperature.

  The present invention reduces the reflectance of the interface between the transparent substrate and the multilayer wiring pattern by a simple method, and improves the uniformity of the reflectance in the visible light region while maintaining good conductivity. The visibility of the wiring pattern from the viewing side can be reduced. A similar measure can be easily considered to improve the characteristic quality related to the display performance of other electronic components and the like. For example, the visibility of the auxiliary wiring pattern including a metal layer for further reducing the resistance of the transparent conductive film can be improved. In addition, the range in which the metal layer can be applied to various wiring patterns in electronic components, including wiring related to display devices in general, can be expanded, and the degree of freedom in product design can be greatly increased.

DESCRIPTION OF SYMBOLS 10 ... Touch panel 10A ... Operation surface 11 ... Transparent substrate 12 ... Transparent electrode 12X ... X electrode 12Y ... Y electrode 12Xa, 12Ya ... Fine wire part 12Xb, 12Yb ... Pad part 13 ... Insulating part 13b ... Through hole 14 ... Crossing part 15 ... Jumper Line 17 ... wiring part C1 ... copper oxide laminated film (first layer)
C2 ... Copper film (second layer)
C3 ... Copper nickel film (third layer)

Claims (10)

A capacitive touch panel that is arranged on the display panel and is operated by touching the operation surface,
A transparent substrate;
A plurality of X electrodes formed in the X direction on the back side of the operation surface of the transparent substrate, and a plurality of Y electrodes formed in the Y direction perpendicular to the X direction;
Have
The plurality of X electrodes and the plurality of Y electrodes are
A plurality of transparent electrodes formed on the same surface on the back side;
A jumper wire that three-dimensionally connects either the transparent electrode of the adjacent X electrode or the transparent electrode of the adjacent Y electrode at an intersection where the X electrode and the Y electrode intersect with each other via an insulating portion; Have
The jumper wire has a first layer connected to the transparent electrode, and a second layer laminated on the first layer,
The first layer is made of a metal oxide film, the second layer is made of a metal film, and the main metal of the first layer and the second layer contains copper,
The reflectance in the visible light region in the first layer is not more than half of the reflectance of the second layer.   The touch panel according to claim 1, wherein a specific resistance of the first layer is higher than that of the second layer.   The touch panel according to claim 1 or 2, wherein the thickness of the first layer is 50 nm or more and 400 nm or less. 4. The touch panel according to claim 1, wherein the first layer has a specific resistance of 1.0 × 10 ^{4 to} 1.0 × 10 ⁶ μΩcm.   The touch panel according to claim 1, wherein the second layer has a thickness of 200 nm or more and 10,000 nm or less.   6. The touch panel according to claim 1, wherein the second layer has a specific resistance of 1.5 μΩcm or more and 3 μΩcm or less. The touch panel according to claim 1, wherein when the first layer is an oxide film of a copper alloy , the touch panel contains nickel.   The touch panel according to claim 1, wherein the second layer is made of copper or a copper alloy containing copper and nickel.   The touch panel according to claim 1, wherein the jumper line has a third layer made of a third metal film laminated on the second layer.   The touch panel according to claim 9, wherein the third layer is made of copper or a copper alloy.

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