JP5905827B2 - Charging device and charged body manufacturing method - Google Patents

Charging device and charged body manufacturing method Download PDF

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JP5905827B2
JP5905827B2 JP2012539769A JP2012539769A JP5905827B2 JP 5905827 B2 JP5905827 B2 JP 5905827B2 JP 2012539769 A JP2012539769 A JP 2012539769A JP 2012539769 A JP2012539769 A JP 2012539769A JP 5905827 B2 JP5905827 B2 JP 5905827B2
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dielectric material
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charging device
reaction chamber
electrode
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JPWO2012053617A1 (en
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鈴木　雄二
雄二 鈴木
真人 本泉
真人 本泉
萩原　啓
啓 萩原
後藤　正英
正英 後藤
井口　義則
義則 井口
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University of Tokyo NUC
Japan Broadcasting Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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    • H01J37/32339—Discharge generated by other radiation using electromagnetic radiation

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Description

本発明は、誘電体材料の帯電装置及び帯電体製造方法に関する。   The present invention relates to a charging device for a dielectric material and a method for manufacturing a charged body.

エレクトレットを使用した装置は、電気エネルギと運動エネルギとの変換効率が高いことが知られており、発電装置、マイクロフォン等に応用されている。   A device using an electret is known to have high conversion efficiency between electric energy and kinetic energy, and is applied to a power generation device, a microphone, and the like.

このようなエレクトレットは、高分子材料等の誘電体材料を帯電させて形成する。例えば、下記特許文献１には、コロナ放電により高分子材料を帯電させてエレクトレットを製造する方法の例が開示されている。また、下記非特許文献１には、コロナ放電により帯電した電荷による表面電位の経時変化の観測結果が開示されている。この観測結果によれば、コロナ放電により２分以上帯電処理を行わないと、表面電位が短時間で低下することがわかる。   Such electrets are formed by charging a dielectric material such as a polymer material. For example, Patent Document 1 below discloses an example of a method for producing an electret by charging a polymer material by corona discharge. Non-Patent Document 1 below discloses the observation result of the change in surface potential with time due to the charge charged by corona discharge. According to this observation result, it can be seen that the surface potential decreases in a short time unless the charging process is performed for 2 minutes or more by corona discharge.

一方、下記特許文献２は、紫外線を使用した帯電物体の中和装置に関する発明であり、紫外線を窒素に照射させて発生させた電荷により、ウエハに帯電した電荷を中和する技術が開示されている。   On the other hand, Patent Document 2 below is an invention relating to a neutralizing device for charged objects using ultraviolet rays, and discloses a technique for neutralizing charges charged on a wafer with charges generated by irradiating ultraviolet rays to nitrogen. Yes.

特開２００９−２４６３２７号公報JP 2009-246327 A 特開平７−１４７６１号公報Japanese Patent Laid-Open No. 7-14761

ドイツ フライブルグ大学博士論文 ２０１０．７月７４頁 ウルリッヒ バーシュ著（Electret-Based Resonant Micro EnergyHarvesting in Two Dimensions Dissertation zur Erlangung des Doktorgrades derTechnischen Fakultat der Albert-Ludwigs-Universitat Freiburg im Breisgau 2010.7pp.74 Ulrich Bartsch)Ph.D. Dissertation, University of Freiburg, Germany, 2010, July 74, 74 by Ulrich Barshsch

しかし、上記特許文献１に記載されているように、コロナ放電を使用して誘電体材料を帯電させる場合には、非特許文献１に記載されているように、帯電時間に２分以上を要し、短時間（１分以内）での帯電処理が困難であるという問題があった。   However, as described in Patent Document 1, when charging a dielectric material using corona discharge, as described in Non-Patent Document 1, it takes 2 minutes or more for the charging time. However, there is a problem that the charging process in a short time (within 1 minute) is difficult.

また、特許文献２に記載されているように、紫外線により発生した電荷を誘電体材料の帯電に使用することも考えられるが、特許文献２には具体的な構成の開示がない。   Further, as described in Patent Document 2, it is conceivable to use charges generated by ultraviolet rays for charging the dielectric material. However, Patent Document 2 does not disclose a specific configuration.

本発明の目的は、短時間の帯電処理で、誘電体材料を高く、経時的に安定した表面電位に帯電できる帯電装置及び帯電体製造方法を提供することにある。   An object of the present invention is to provide a charging device and a method of manufacturing a charged body that can charge a dielectric material to a high and stable surface potential over time by a short-time charging treatment.

上記目的を達成するために、請求項１に記載の帯電装置の発明は、所定のガスが収容され、圧力０．１〜２００Ｐａに調製された反応室と、前記反応室内に収容されたガスに対して、波長が３００ｎｍ以下の紫外線を照射し、負電荷を発生させる紫外線照射手段と、反応室内に配置された、長方形形状の板またはフィルムである誘電体材料の方向に前記負電荷を引きつける電界を発生し、前記負電荷の少なくとも一部を前記誘電体材料の内部に注入して蓄積し、前記誘電体材料の表面電位を低下させる電界発生手段と、を備えることを特徴とする。
In order to achieve the above object, the invention of the charging device according to claim 1 includes a reaction chamber in which a predetermined gas is accommodated and adjusted to a pressure of 0.1 to 200 Pa, and a gas accommodated in the reaction chamber. On the other hand , an ultraviolet irradiation means for irradiating ultraviolet rays having a wavelength of 300 nm or less to generate a negative charge, and an electric field that attracts the negative charges toward the dielectric material that is a rectangular plate or film disposed in the reaction chamber. was generated, the at least a portion of the negative charges accumulated in injected into the dielectric material, characterized in that it comprises a field generating means Ru lowers the surface potential of the dielectric material.

また、請求項２の発明は、請求項１に記載の帯電装置において、前記電界発生手段は、前記誘電体材料の近傍または接した位置に配置され、正電圧が印加された電極を含むことを特徴とする。   According to a second aspect of the present invention, in the charging device according to the first aspect, the electric field generating means includes an electrode disposed near or in contact with the dielectric material and applied with a positive voltage. Features.

また、請求項３の発明は、請求項１または請求項２に記載の帯電装置において、前記電界発生手段が、網状の電極であることを特徴とする。   According to a third aspect of the present invention, in the charging device according to the first or second aspect, the electric field generating means is a mesh electrode.

また、請求項４の発明は、請求項１から請求項３のいずれか一項に記載の帯電装置において、前記誘電体材料が移動しつつ連続的に帯電されることを特徴とする。   According to a fourth aspect of the present invention, in the charging device according to any one of the first to third aspects, the dielectric material is continuously charged while moving.

また、請求項５の発明は、請求項１から請求項４のいずれか一項に記載の帯電装置において、前記所定のガスは窒素ガス、希ガスまたはこれらの混合ガスであり、酸素含有量が０．０１ｍｏｌ％以下であることを特徴とする。   Further, the invention of claim 5 is the charging device according to any one of claims 1 to 4, wherein the predetermined gas is nitrogen gas, rare gas or a mixed gas thereof, and has an oxygen content. It is characterized by being 0.01 mol% or less.

また、請求項６に記載の帯電体製造方法の発明は、圧力０．１〜２００Ｐａの下、所定のガスを収容した雰囲気下に誘電体材料を配置し、該ガスに波長が３００ｎｍ以下の紫外線を照射して負電荷を発生させ、該負電荷を、長方形形状の板またはフィルムである該誘電体材料に注入して帯電させ、前記誘電体材料の表面電位を低下させる、ことを特徴とする。 Further, in the invention of the charged body manufacturing method according to claim 6, a dielectric material is disposed in an atmosphere containing a predetermined gas under a pressure of 0.1 to 200 Pa , and the wavelength of the ultraviolet light is 300 nm or less. to generate a negative charge by irradiation with, and wherein the negative charge is injected into the dielectric material is a plate or film of a rectangular shape is charged, Ru lowers the surface potential of the dielectric material, To do.

本発明によれば、短時間の帯電処理で、誘電体材料を高く、経時的に安定した表面電位に帯電できる帯電装置を提供できる。   According to the present invention, it is possible to provide a charging device capable of charging a dielectric material to a high and stable surface potential over time by a short-time charging process.

本実施形態にかかる帯電装置の構成例を示す図である。It is a figure which shows the structural example of the charging device concerning this embodiment. 本実施形態にかかる帯電装置の他の構成例を示す図である。It is a figure which shows the other structural example of the charging device concerning this embodiment. 本実施形態にかかる帯電装置のさらに他の構成例を示す図である。It is a figure which shows the further another structural example of the charging device concerning this embodiment. 表面電位の測定結果を示す図である。It is a figure which shows the measurement result of surface potential. 表面電位の測定結果を示す図である。It is a figure which shows the measurement result of surface potential. 表面電位の測定結果を示す図である。It is a figure which shows the measurement result of surface potential. 表面電位の測定結果を示す図である。It is a figure which shows the measurement result of surface potential. 本実施形態にかかる帯電装置の動作例の説明図である。It is explanatory drawing of the operation example of the charging device concerning this embodiment.

以下、本発明を実施するための形態（以下、実施形態という）を、図面に従って説明する。   Hereinafter, modes for carrying out the present invention (hereinafter referred to as embodiments) will be described with reference to the drawings.

図１には、本実施形態にかかる帯電装置の構成例が示される。図１において、帯電装置１０は、反応室１２、紫外線照射手段１４、電極１６及び減圧ポンプ１８を含んで構成されている。   FIG. 1 shows a configuration example of a charging device according to this embodiment. In FIG. 1, the charging device 10 includes a reaction chamber 12, ultraviolet irradiation means 14, an electrode 16, and a vacuum pump 18.

反応室１２は、所定のガスが収容された密封容器であり、ガス供給管２２から当該ガスが供給されるとともに、減圧ポンプ１８により減圧されて大気圧以下の圧力に調整されている。ガス供給管２２からは、流量制御装置３０を介して、一定流量のガスを供給できるように構成されている。また、反応室１２の内部圧力は、圧力計３２により測定できる。さらに、反応室１２と減圧ポンプ１８との間には、圧力調整弁３４が設けられ、反応室１２の内部圧力を調整できる構成となっている。反応室１２は、アース端子２４により接地されている。上記所定のガスとしては、例えばイナートガス、希ガス等が挙げられる。イナートガスとしては、例えば窒素が使用でき、希ガスとしては、例えばヘリウム、ネオン、アルゴン、クリプトン、キセノン、ラドンが使用できるが、紫外線により励起して電子を放出し、かつ帯電させる対象である誘電体材料２０と反応性のないガスであれば、何れも使用することができる。また、上記ガスは単独で使用してもよいし、混合して（混合ガスとして）使用してもよい。なお、上記所定のガスの酸素含有量は、０．０１ｍｏｌ％以下であることが好ましい。酸素がこの割合以上含まれると、後述する紫外線照射手段１４から照射される紫外線によって励起されたガスから発生する電荷量が大きく減衰するからである。   The reaction chamber 12 is a sealed container containing a predetermined gas. The gas is supplied from a gas supply pipe 22 and is decompressed by a decompression pump 18 to be adjusted to a pressure equal to or lower than atmospheric pressure. The gas supply pipe 22 is configured to supply a gas having a constant flow rate via the flow rate control device 30. Further, the internal pressure of the reaction chamber 12 can be measured by a pressure gauge 32. Further, a pressure adjusting valve 34 is provided between the reaction chamber 12 and the decompression pump 18 so that the internal pressure of the reaction chamber 12 can be adjusted. The reaction chamber 12 is grounded by a ground terminal 24. Examples of the predetermined gas include an inert gas and a rare gas. As the inert gas, for example, nitrogen can be used, and as the rare gas, for example, helium, neon, argon, krypton, xenon, and radon can be used. Any gas that is not reactive with the material 20 can be used. Moreover, the said gas may be used independently and may be mixed and used (as mixed gas). The oxygen content of the predetermined gas is preferably 0.01 mol% or less. This is because, when oxygen is contained in an amount higher than this ratio, the amount of charge generated from the gas excited by the ultraviolet rays irradiated from the ultraviolet irradiation means 14 described later is greatly attenuated.

紫外線照射手段１４は、波長３００ｎｍ以下のいわゆる深紫外線あるいは真空紫外線とよばれる紫外線を発生し、反応室１２内に収容されたガスに照射する装置である。ガスに紫外線を照射することにより、ガスが励起され、電荷（正負の電荷）が発生する。紫外線照射手段１４の方式は、波長３００ｎｍ以下の深紫外線あるいは真空紫外線を発生できれば限定されないが、例えば紫外線ＬＥＤや重水素ランプ等を利用することができる。   The ultraviolet irradiation means 14 is an apparatus that generates ultraviolet rays called so-called deep ultraviolet rays or vacuum ultraviolet rays having a wavelength of 300 nm or less and irradiates the gas accommodated in the reaction chamber 12. By irradiating the gas with ultraviolet rays, the gas is excited and charges (positive and negative charges) are generated. The method of the ultraviolet irradiation means 14 is not limited as long as it can generate deep ultraviolet rays or vacuum ultraviolet rays having a wavelength of 300 nm or less. For example, an ultraviolet LED or a deuterium lamp can be used.

電極１６は、紫外線照射手段１４からの紫外線照射により上記ガスから発生した負電荷（電子）を反応室１２内に配置された誘電体材料２０の方向に移動させる電界を発生する。上述したように、反応室１２は接地されている。従って、上記電界を発生するために、電極１６には、反応室１２と電気的に絶縁された状態で電源２６から正電圧が印加されている。電圧値は、誘電体材料２０の目標帯電電圧値に応じて決定するが、例えば１ｋＶ程度の電圧とする。なお、図１に示された例では、電極１６の上に誘電体材料２０が載せられて（接して）いるが、これには限定されず、誘電体材料２０の近傍に電極１６を配置すればよい。ここで、近傍とは、負電荷が電極１６により引きつけられて誘電体材料２０の方向に移動する経路上の位置に誘電体材料２０が配置されている、電極１６と誘電体材料２０との配置関係をいう。また、電極１６と誘電体材料２０は、電極１６から誘電体材料２０を見たときに、誘電体材料２０の帯電させたい表面が不可視の側となるような位置関係に配置してもよい。   The electrode 16 generates an electric field that moves negative charges (electrons) generated from the gas by the ultraviolet irradiation from the ultraviolet irradiation means 14 in the direction of the dielectric material 20 disposed in the reaction chamber 12. As described above, the reaction chamber 12 is grounded. Therefore, in order to generate the electric field, a positive voltage is applied to the electrode 16 from the power source 26 while being electrically insulated from the reaction chamber 12. The voltage value is determined according to the target charging voltage value of the dielectric material 20, and is set to a voltage of about 1 kV, for example. In the example shown in FIG. 1, the dielectric material 20 is placed on (in contact with) the electrode 16. However, the present invention is not limited to this, and the electrode 16 is disposed in the vicinity of the dielectric material 20. That's fine. Here, the vicinity refers to the arrangement of the electrode 16 and the dielectric material 20 where the dielectric material 20 is arranged at a position on the path where the negative charge is attracted by the electrode 16 and moves in the direction of the dielectric material 20. Say relationship. Further, the electrode 16 and the dielectric material 20 may be arranged in a positional relationship such that when the dielectric material 20 is viewed from the electrode 16, the surface of the dielectric material 20 to be charged is an invisible side.

減圧ポンプ１８は、上述したように、反応室１２の内部圧力を、大気圧以下の圧力に調整する。形式は特に限定されないが、反応室１２の内部圧力を１×１０−４Ｐａ程度まで減圧できればよい。As described above, the decompression pump 18 adjusts the internal pressure of the reaction chamber 12 to a pressure equal to or lower than atmospheric pressure. Although the format is not particularly limited, it is sufficient that the internal pressure of the reaction chamber 12 can be reduced to about 1 × 10 −4 Pa.

次に、以上に述べた帯電装置の動作例を図８に基づいて説明する。電極１６の近傍、例えば電極１６の上に誘電体材料２０を配置した後（Ｓ１）、減圧ポンプ１８により反応室１２内を１×１０−４Ｐａまで減圧し、残留気体を除去する。次に、ガス供給管２２から流量制御装置３０を介して一定流量のガスを導入しつつ、反応室１２と減圧ポンプ１８との間に設置した圧力調整弁３４の開度を調整して、反応室１２の内部圧力を所定の圧力に調整する（Ｓ２）。この圧力は、ガスの種類、紫外線照射手段１４から照射される紫外線の波長等により適宜決定するが、例えば０．１〜２００Ｐａの範囲とすることができる。なお、ガス供給管２２から常にガスを供給しなくとも、反応室１２内を排気したのちに圧力調整弁３４を完全に閉め、ある一定の圧力までガスを供給して減圧状態にしておくことでも、反応室１２の内部圧力を所定の圧力に調整することができる。Next, an operation example of the charging device described above will be described with reference to FIG. After the dielectric material 20 is disposed in the vicinity of the electrode 16, for example, on the electrode 16 (S 1), the pressure in the reaction chamber 12 is reduced to 1 × 10 −4 Pa by the vacuum pump 18 to remove the residual gas. Next, a constant flow rate of gas is introduced from the gas supply pipe 22 via the flow rate control device 30, and the opening of the pressure adjustment valve 34 installed between the reaction chamber 12 and the pressure reducing pump 18 is adjusted to react. The internal pressure of the chamber 12 is adjusted to a predetermined pressure (S2). This pressure is appropriately determined depending on the type of gas, the wavelength of the ultraviolet rays irradiated from the ultraviolet irradiation means 14, etc., and can be, for example, in the range of 0.1 to 200 Pa. Even if the gas is not always supplied from the gas supply pipe 22, the pressure adjusting valve 34 may be completely closed after the reaction chamber 12 is exhausted, and the gas may be supplied to a certain pressure and kept in a reduced pressure state. The internal pressure of the reaction chamber 12 can be adjusted to a predetermined pressure.

上記状態（所定の圧力の下、所定のガスを反応室１２に収容した雰囲気下）で、紫外線照射手段１４から紫外線を照射してガスを励起し、正電荷（例えば窒素イオン）と負電荷（電子）を発生させる（Ｓ３）。また、電極１６に電圧を印加し、発生した電子を電極１６により発生した電界により電極１６の方向に移動させ、当該方向にある誘電体材料２０の表面に到達させて誘電体材料２０を帯電させ、その表面電位を低下（電位の絶対値は上昇）させる（Ｓ４）。このときに到達できる誘電体材料２０の表面電位は、電極１６に印加した電圧により決まる。なお、誘電体材料２０の表面に到達した電子は、少なくともその一部が誘電体材料２０の内部に注入されて蓄積され、誘電体材料２０をエレクトレットとして機能させる。本実施形態の帯電方法により誘電体材料２０に電子を蓄積させ、帯電させるのに要する時間は、２秒以下であり、短時間でエレクトレットを製造することができる。なお、電極１６に負電圧を印加することにより、正に帯電したエレクトレットを作製することも可能である。   In the above state (under an atmosphere in which a predetermined gas is contained in the reaction chamber 12 under a predetermined pressure), the gas is excited by irradiating ultraviolet rays from the ultraviolet irradiation means 14, and positive charges (for example, nitrogen ions) and negative charges ( Electron) is generated (S3). In addition, a voltage is applied to the electrode 16, and the generated electrons are moved in the direction of the electrode 16 by the electric field generated by the electrode 16 to reach the surface of the dielectric material 20 in the direction to charge the dielectric material 20. The surface potential is decreased (the absolute value of the potential is increased) (S4). The surface potential of the dielectric material 20 that can be reached at this time is determined by the voltage applied to the electrode 16. It should be noted that at least a part of the electrons that have reached the surface of the dielectric material 20 are injected and accumulated in the dielectric material 20 to cause the dielectric material 20 to function as an electret. The time required to accumulate and charge electrons in the dielectric material 20 by the charging method of this embodiment is 2 seconds or less, and the electret can be manufactured in a short time. It is also possible to produce a positively electret electret by applying a negative voltage to the electrode 16.

図２には、本実施形態にかかる帯電装置の他の構成例が示され、図１と同一要素には同一符号を付している。図２の例では、反応室１２を接地する代わりに、負電極２８を設け、この負電極２８を接地している。また、誘電体材料２０は、電極１６と負電極２８との間に配置されている。   FIG. 2 shows another configuration example of the charging device according to the present embodiment, and the same elements as those in FIG. In the example of FIG. 2, instead of grounding the reaction chamber 12, a negative electrode 28 is provided, and the negative electrode 28 is grounded. The dielectric material 20 is disposed between the electrode 16 and the negative electrode 28.

紫外線照射手段１４から紫外線を照射してガスを励起し、正電荷（例えば窒素イオン）と負電荷（電子）を発生させると、電子が電極１６に引かれて誘電体材料２０の方向に移動する。これにより、誘電体材料２０が帯電してエレクトレットとなる。なお、本実施形態では、誘電体材料２０を、例えば長方形形状（細片状）の板またはフィルムとし、その長手方向に電極１６と負電極２８との間を移動させて、連続的に帯電するように構成してもよい。   When the gas is excited by irradiating ultraviolet rays from the ultraviolet irradiation means 14 to generate positive charges (for example, nitrogen ions) and negative charges (electrons), the electrons are attracted to the electrode 16 and move toward the dielectric material 20. . Thereby, the dielectric material 20 is charged and becomes an electret. In this embodiment, the dielectric material 20 is, for example, a rectangular (strip-shaped) plate or film, and is continuously charged by moving between the electrode 16 and the negative electrode 28 in the longitudinal direction. You may comprise as follows.

図３には、本実施形態にかかる帯電装置のさらに他の構成例が示され、図１と同一要素には同一符号を付している。図３において、電極１６は網状に形成されており、誘電体材料２０の前に配置されている。この電極１６には、図１の場合と同様に、電源２６から正電圧が印加される。紫外線照射手段１４から紫外線を照射してガスを励起し、正電荷（例えば窒素イオン）と負電荷（電子）を発生させると、電子が電極１６に引かれて（加速されて）誘電体材料２０の方向に移動する。上述したように、電極１６は網状に形成されているので、電極１６に到達した電子の多くは網目を通過し、誘電体材料２０の表面に到達する。これにより、誘電体材料２０が帯電してエレクトレットとなる。電極１６と誘電体材料２０は、電極１６から誘電体材料２０を見たときに、誘電体材料２０の帯電させたい表面が可視の側となるような位置関係に配置する。   FIG. 3 shows still another configuration example of the charging device according to the present embodiment, and the same elements as those in FIG. 1 are denoted by the same reference numerals. In FIG. 3, the electrode 16 is formed in a net shape and is disposed in front of the dielectric material 20. A positive voltage is applied to the electrode 16 from the power source 26 as in the case of FIG. When the gas is excited by irradiating ultraviolet rays from the ultraviolet irradiation means 14 to generate positive charges (for example, nitrogen ions) and negative charges (electrons), the electrons are attracted (accelerated) to the electrode 16 and the dielectric material 20. Move in the direction of. As described above, since the electrode 16 is formed in a mesh shape, most of the electrons that have reached the electrode 16 pass through the mesh and reach the surface of the dielectric material 20. Thereby, the dielectric material 20 is charged and becomes an electret. The electrode 16 and the dielectric material 20 are arranged in a positional relationship such that when the dielectric material 20 is viewed from the electrode 16, the surface of the dielectric material 20 to be charged is on the visible side.

以上に述べた誘電体材料２０としては、用途に応じて適宜選択できるが、例えばフッ素樹脂、二酸化ケイ素、窒化膜を形成した二酸化ケイ素等を使用することができる。   The dielectric material 20 described above can be appropriately selected depending on the application, and for example, fluororesin, silicon dioxide, silicon dioxide having a nitride film formed, or the like can be used.

以下、本発明の具体例を実施例として説明する。ただし、本発明は、以下に述べる実施例に限定されるものではない。   Hereinafter, specific examples of the present invention will be described as examples. However, the present invention is not limited to the examples described below.

図１に示された帯電装置を使用し、電極１６上に１５μｍの厚さのＣＹＴＯＰ（登録商標 旭硝子株式会社製）フィルムを配置し、反応室１２の内部圧力を減圧ポンプ１８にて５×１０−３Ｐａまで減圧した。上記ＣＹＴＯＰフィルムは、低抵抗Ｓｉ基板上にスピンコートし、１８５℃で１．５時間熱処理することにより形成した。A CYTOP (registered trademark, manufactured by Asahi Glass Co., Ltd.) film having a thickness of 15 μm is disposed on the electrode 16 using the charging device shown in FIG. 1, and the internal pressure of the reaction chamber 12 is reduced to 5 × 10 The pressure was reduced to -3 Pa. The CYTOP film was formed by spin coating on a low resistance Si substrate and heat-treating at 185 ° C. for 1.5 hours.

次に、ガス供給管２２から流量制御装置３０を介して純度９９．９９９５％の窒素ガスを反応室１２に一定流速で供給し、減圧ポンプ１８で排気しつつ圧力調整弁３４により反応室１２の内部圧力を制御した。なお、反応室１２の内部圧力は、圧力計３２により測定した。本実施例では、反応室１２の内部圧力を変更しながら後述する真空紫外線の照射を行い、ＣＹＴＯＰフィルムの表面電位を測定した。   Next, nitrogen gas having a purity of 99.9995% is supplied from the gas supply pipe 22 to the reaction chamber 12 through the flow rate control device 30 at a constant flow rate, and exhausted by the decompression pump 18, and the pressure adjusting valve 34 is used to The internal pressure was controlled. The internal pressure of the reaction chamber 12 was measured with a pressure gauge 32. In this example, the surface potential of the CYTOP film was measured by irradiating with vacuum ultraviolet rays described later while changing the internal pressure of the reaction chamber 12.

紫外線照射手段１４として、浜松ホトニクス株式会社製重水素ランプＬ１８３５を使用して、１２０〜１６０ｎｍの真空紫外線を反応室１２内の窒素ガスに照射した。また、電極１６には、電源２６から１ｋＶまたは６００Ｖの電圧を印加した。紫外線照射手段１４による真空紫外線の照射時間が、ＣＹＴＯＰフィルムの帯電処理時間であり、本実施例では、この照射時間を変更しながらＣＹＴＯＰフィルムの表面電位を測定した。   As the ultraviolet irradiation means 14, a deuterium lamp L1835 manufactured by Hamamatsu Photonics Co., Ltd. was used to irradiate nitrogen gas in the reaction chamber 12 with vacuum ultraviolet rays of 120 to 160 nm. Further, a voltage of 1 kV or 600 V was applied to the electrode 16 from the power source 26. The irradiation time of vacuum ultraviolet rays by the ultraviolet irradiation means 14 is the charging time of the CYTOP film. In this example, the surface potential of the CYTOP film was measured while changing the irradiation time.

上記方法により帯電させたＣＹＴＯＰフィルムの表面電位は、表面電位計（ｍｏｄｅｌ２７９；モンローエレクトロニクス製）にて測定した。   The surface potential of the CYTOP film charged by the above method was measured with a surface potential meter (model 279; manufactured by Monroe Electronics).

図４，図５，図６，図７には、表面電位の測定結果が示される。図４は、電極１６の印加電圧を１ｋＶ、真空紫外線の照射時間を３秒とした場合の、反応室１２の内部圧力と表面電位との関係である。また、図５は、電極１６の印加電圧を１ｋＶ、反応室１２の内部圧力を１．０Ｐａとした場合の、真空紫外線の照射時間と表面電位との関係である。また、図６は、反応室１２の内部圧力を１．０Ｐａ、電極１６の印加電圧を１ｋＶ、真空紫外線の照射時間を３秒とした場合、及び反応室１２の内部圧力を１．０Ｐａ、電極１６の印加電圧を６００Ｖ、真空紫外線の照射時間を２０秒とした場合の表面電位の経時変化である。また、図７は、反応室１２の内部圧力を１．０Ｐａ、電極１６の印加電圧を６００Ｖ、真空紫外線の照射時間を２０秒とした場合の、窒素ガスの不純物濃度と表面電位の関係である。   4, 5, 6, and 7 show the measurement results of the surface potential. FIG. 4 shows the relationship between the internal pressure of the reaction chamber 12 and the surface potential when the applied voltage of the electrode 16 is 1 kV and the irradiation time of vacuum ultraviolet rays is 3 seconds. FIG. 5 shows the relationship between the vacuum ultraviolet irradiation time and the surface potential when the applied voltage of the electrode 16 is 1 kV and the internal pressure of the reaction chamber 12 is 1.0 Pa. FIG. 6 shows that the internal pressure of the reaction chamber 12 is 1.0 Pa, the applied voltage of the electrode 16 is 1 kV, the irradiation time of vacuum ultraviolet rays is 3 seconds, and the internal pressure of the reaction chamber 12 is 1.0 Pa. This is a change with time in the surface potential when the applied voltage of 16 is 600 V and the irradiation time of vacuum ultraviolet rays is 20 seconds. FIG. 7 shows the relationship between the nitrogen gas impurity concentration and the surface potential when the internal pressure of the reaction chamber 12 is 1.0 Pa, the applied voltage of the electrode 16 is 600 V, and the irradiation time of vacuum ultraviolet rays is 20 seconds. .

図４において、真空紫外線の照射時間を３秒とすると、反応室１２の内部圧力が０．１Ｐａで表面電位が飽和することがわかる。従って、反応室１２の内部圧力は、０．１Ｐａ以上に維持すればよい。   In FIG. 4, when the irradiation time of vacuum ultraviolet rays is 3 seconds, it can be seen that the surface potential is saturated when the internal pressure of the reaction chamber 12 is 0.1 Pa. Therefore, the internal pressure of the reaction chamber 12 may be maintained at 0.1 Pa or higher.

また、図５において、電極１６の印加電圧を１ｋＶ、反応室１２の内部圧力を１．０Ｐａとすると、真空紫外線の照射時間が０．３秒で−７００Ｖの表面電位に到達することがわかる。従って、本実施例では、コロナ放電等による帯電方法と較べて、短時間の帯電処理時間で高い表面電位を得ることができる。   In FIG. 5, when the applied voltage of the electrode 16 is 1 kV and the internal pressure of the reaction chamber 12 is 1.0 Pa, it can be seen that the surface potential of −700 V is reached in 0.3 seconds in the irradiation time of vacuum ultraviolet rays. Therefore, in this embodiment, a higher surface potential can be obtained in a shorter charging process time as compared with a charging method using corona discharge or the like.

また、図６において、ＣＹＴＯＰフィルムの表面電位の経時変化は、帯電処理後のＣＹＴＯＰフィルムを２０℃、相対湿度６０％の状態で保持して測定した。図６に示されるように、電極１６の印加電圧を１ｋＶ、真空紫外線の照射時間を３秒とした場合には初期の表面電位が−７８０Ｖ程度、反応室１２の内部圧力を１．０Ｐａ、電極１６の印加電圧を６００Ｖ、真空紫外線の照射時間を２０秒とした場合には初期の表面電位が−５００Ｖ程度になっているが、いずれの場合も、それらの値が２０００時間後まで維持されている。従って、コロナ放電等による帯電方法と較べて、短時間の帯電処理時間で、表面電位を長時間、安定して維持できる帯電処理を実現できる。   In FIG. 6, the time-dependent change in the surface potential of the CYTOP film was measured by holding the CYTOP film after the charging treatment at 20 ° C. and a relative humidity of 60%. As shown in FIG. 6, when the applied voltage of the electrode 16 is 1 kV and the irradiation time of vacuum ultraviolet rays is 3 seconds, the initial surface potential is about -780 V, the internal pressure of the reaction chamber 12 is 1.0 Pa, the electrode When the applied voltage of 16 is 600 V and the irradiation time of vacuum ultraviolet rays is 20 seconds, the initial surface potential is about −500 V. In either case, these values are maintained until 2000 hours later. Yes. Therefore, as compared with a charging method using corona discharge or the like, it is possible to realize a charging process that can stably maintain the surface potential for a long time with a short charging process time.

また、図７において、窒素ガスの不純物濃度が小さくなるにつれて、表面電位の増加量が大きいことがわかる。特に不純物濃度が０．０１ｍｏｌ％以下の場合、大きな増加量が得られるため、短時間の帯電処理時間で高い表面電位を得ることができる。なお、ここで窒素ガスの不純物濃度とは、（１００％−ガスの純度）である。不純物は通常酸素あるいは酸素原子を含むガス（一酸化炭素、二酸化炭素、亜酸化窒素、二硫化酸素、水）がほとんどを占める。   In FIG. 7, it can be seen that the amount of increase in surface potential increases as the impurity concentration of nitrogen gas decreases. In particular, when the impurity concentration is 0.01 mol% or less, a large amount of increase can be obtained, so that a high surface potential can be obtained in a short charging time. Here, the impurity concentration of nitrogen gas is (100% -purity of gas). Impurities are usually mostly oxygen or gas containing oxygen atoms (carbon monoxide, carbon dioxide, nitrous oxide, oxygen disulfide, water).

１０ 帯電装置、１２ 反応室、１４ 紫外線照射手段、１６ 電極、１８ 減圧ポンプ、２０ 誘電体材料、２２ ガス供給管、２４ アース端子、２６ 電源、２８ 負電極、３０ 流量制御装置、３２ 圧力計、３４ 圧力調整弁。   DESCRIPTION OF SYMBOLS 10 Charging device, 12 Reaction chamber, 14 Ultraviolet irradiation means, 16 Electrode, 18 Vacuum pump, 20 Dielectric material, 22 Gas supply pipe, 24 Ground terminal, 26 Power supply, 28 Negative electrode, 30 Flow control device, 32 Pressure gauge, 34 Pressure regulating valve.

Claims (6)

所定のガスが収容され、圧力０．１〜２００Ｐａに調製された反応室と、
前記反応室内に収容されたガスに対して、波長が３００ｎｍ以下の紫外線を照射し、負電荷を発生させる紫外線照射手段と、
反応室内に配置された、長方形形状の板またはフィルムである誘電体材料の方向に前記負電荷を引きつける電界を発生し、前記負電荷の少なくとも一部を前記誘電体材料の内部に注入して蓄積し、前記誘電体材料の表面電位を低下させる電界発生手段と、
を備えることを特徴とする帯電装置。 A reaction chamber containing a predetermined gas and adjusted to a pressure of 0.1 to 200 Pa ;
Ultraviolet irradiation means for generating negative charges by irradiating the gas contained in the reaction chamber with ultraviolet rays having a wavelength of 300 nm or less ;
An electric field that attracts the negative charge is generated in the direction of the dielectric material that is a rectangular plate or film disposed in the reaction chamber, and at least a part of the negative charge is injected and accumulated in the dielectric material. and, an electric field generating means Ru lowers the surface potential of the dielectric material,
A charging device comprising: 請求項１に記載の帯電装置において、前記電界発生手段は、前記誘電体材料の近傍または接した位置に配置され、正電圧が印加された電極を含むことを特徴とする帯電装置。   2. The charging device according to claim 1, wherein the electric field generating unit includes an electrode which is disposed in the vicinity of or in contact with the dielectric material and to which a positive voltage is applied. 3. 請求項１または請求項２に記載の帯電装置において、前記電界発生手段は、網状の電極であることを特徴とする帯電装置。   3. The charging device according to claim 1, wherein the electric field generating means is a mesh electrode. 請求項１から請求項３のいずれか一項に記載の帯電装置において、前記誘電体材料が移動しつつ連続的に帯電されることを特徴とする帯電装置。   The charging device according to any one of claims 1 to 3, wherein the dielectric material is continuously charged while moving. 請求項１から請求項４のいずれか一項に記載の帯電装置において、前記所定のガスは窒素ガス、希ガスまたはこれらの混合ガスであり、酸素含有量が０．０１ｍｏｌ％以下であることを特徴とする帯電装置。   5. The charging device according to claim 1, wherein the predetermined gas is nitrogen gas, a rare gas, or a mixed gas thereof, and an oxygen content is 0.01 mol% or less. Characteristic charging device. 圧力０．１〜２００Ｐａの下、所定のガスを収容した雰囲気下に誘電体材料を配置し、
該ガスに波長が３００ｎｍ以下の紫外線を照射して負電荷を発生させ、
該負電荷を、長方形形状の板またはフィルムである該誘電体材料に注入して帯電させ、前記誘電体材料の表面電位を低下させる、
ことを特徴とする帯電体製造方法。
 Disposing a dielectric material in an atmosphere containing a predetermined gas under a pressure of 0.1 to 200 Pa ,
The gas is irradiated with ultraviolet light having a wavelength of 300 nm or less to generate a negative charge,
The negative charge is injected into the dielectric material is a plate or film of a rectangular shape is charged, Ru lowers the surface potential of the dielectric material,
A charged body manufacturing method characterized by the above.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714761A (en) * 1991-07-25 1995-01-17 Tadahiro Omi Neutralizing apparatus for charged article
JP2002248335A (en) * 2000-12-07 2002-09-03 Japan Vilene Co Ltd Method and device for making electret, and method for making electret body
JP2003045334A (en) * 2001-07-30 2003-02-14 Canon Inc Manufacturing method of vacuum container and image forming device
JP2006267082A (en) * 2005-02-24 2006-10-05 Rigaku Corp Charge-regulating apparatus and method, and thermally stimulated current-measuring method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714761A (en) * 1991-07-25 1995-01-17 Tadahiro Omi Neutralizing apparatus for charged article
JP2002248335A (en) * 2000-12-07 2002-09-03 Japan Vilene Co Ltd Method and device for making electret, and method for making electret body
JP2003045334A (en) * 2001-07-30 2003-02-14 Canon Inc Manufacturing method of vacuum container and image forming device
JP2006267082A (en) * 2005-02-24 2006-10-05 Rigaku Corp Charge-regulating apparatus and method, and thermally stimulated current-measuring method

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