JP5743488B2 - Substrate processing apparatus and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a semiconductor device manufacturing method, and more particularly to a substrate processing apparatus and a semiconductor device manufacturing method for processing a substrate using plasma.

  As one of semiconductor device manufacturing processes, there is a film forming process for depositing a predetermined thin film on a substrate using a CVD (Chemical Vapor Deposition) method using plasma or an ALD (Atomic Layer Deposition) method (see Patent Document 1). ). The CVD method is a method of depositing a thin film having an element contained in a source gas molecule as a constituent element on a substrate to be processed by utilizing a gas phase and a reaction at the surface of a gaseous source. In the CVD method, a plurality of types of source gases including a plurality of elements constituting a film to be formed are simultaneously supplied onto a substrate to be processed. In the case of the ALD method, a plurality of types of source gases containing a plurality of elements constituting a film to be formed are alternately supplied onto the substrate to be processed. In the ALD method, thin film deposition is controlled at the atomic layer level. The plasma is used for accelerating the chemical reaction of the thin film deposited by the CVD method, removing impurities from the thin film, or assisting the chemical reaction of the deposited film forming material by the ALD method. .

Japanese Patent Laid-Open No. 2003-3297818

  However, with stepwise miniaturization in the manufacture of semiconductor devices, it has become necessary to form a film at a lower substrate temperature. For this purpose, it is necessary to increase the high-frequency power when forming plasma. . Increasing the high-frequency power when forming plasma increases the damage to the substrate and the film to be formed, which is not preferable.

  SUMMARY OF THE INVENTION A main object of the present invention is to provide a substrate processing apparatus and a semiconductor device manufacturing method that can reduce damage to a substrate and a film to be formed when processing the substrate using plasma, and can lower the substrate processing temperature. There is.

According to the present invention,
A processing chamber for processing the substrate;
A first process gas supply system that has a first gas supply port that opens into the process chamber, and that supplies a first process gas from the first gas supply port to the process chamber;
A first buffer chamber that is partitioned from the processing chamber and has a second gas supply port that opens into the processing chamber;
A second buffer chamber that is partitioned from the processing chamber and has a third gas supply port that opens into the processing chamber;
A second processing gas supply system for supplying a second processing gas to the first buffer chamber and the second buffer chamber, respectively.
A first plasma source for generating a plasma inside the first buffer chamber by supplying a high-frequency power and activating the second processing gas by the plasma inside the first buffer chamber;
A second plasma source for generating plasma inside the second buffer chamber by supplying high-frequency power and activating the second processing gas inside the second buffer chamber by the plasma;
An exhaust system for exhausting the processing chamber from an exhaust port;
A first process for supplying the first processing gas to the substrate in the processing chamber from the first gas supply port and exhausting the substrate from the exhaust port; and the first buffer for the substrate in the processing chamber. The second process gas activated by plasma in the chamber is supplied from the second gas supply port of the first buffer chamber, and the second process gas activated by plasma in the second buffer chamber is supplied. A film is formed on the substrate by performing a predetermined number of cycles including a second process of supplying a processing gas from the third gas supply port of the second buffer chamber and exhausting from the exhaust port. In the second process, compared with the case where the second processing gas activated by plasma in one buffer chamber by supplying high-frequency power to one plasma source is supplied to the substrate, The first process gas supply system, the second process gas supply system, the first plasma source, so as to supply high frequency power to each of the first plasma source and the second plasma source, A controller configured to control the second plasma source and the exhaust system;
Equipped with a,
The third gas supply port is provided on a side opposite to the second gas supply port by 180 degrees across the center of the substrate in the processing chamber, and the first gas supply port is connected to the exhaust port and the exhaust port. A substrate processing apparatus provided between the third gas supply port is provided.

Moreover, according to the present invention,
A first step of supplying a first processing gas to the substrate in the processing chamber from the first gas supply port and exhausting the substrate from the exhaust port;
A second processing gas activated by plasma in a first buffer chamber having a second gas supply port that is partitioned from the processing chamber and opens into the processing chamber is supplied from the second gas supply port into the processing chamber. The third processing gas is supplied to the substrate and is activated by plasma in a second buffer chamber that is partitioned from the processing chamber and has a third gas supply port that opens into the processing chamber. A second step of supplying to the substrate in the processing chamber from a gas supply port and exhausting from the exhaust port;
Including a step of forming a film on the substrate by performing a predetermined number of cycles including:
The third gas supply port is provided 180 degrees opposite to the second gas supply port across the center of the substrate in the processing chamber, and the first gas supply port includes the exhaust port and the first gas supply port. It is provided between 3 gas supply ports,
In the second step, plasma is generated inside the first buffer chamber by supplying high-frequency power to the first plasma source, and the second processing gas is generated inside the first buffer chamber. The plasma is generated inside the second buffer chamber by being activated by plasma and supplying high frequency power to the second plasma source, and the second processing gas is inside the second buffer chamber. In this case, the second processing gas activated by plasma in one buffer chamber is supplied to the substrate by supplying high-frequency power to one plasma source. A method for manufacturing a semiconductor device is also provided in which a small high-frequency power is supplied to each of the first plasma source and the second plasma source.

  ADVANTAGE OF THE INVENTION According to this invention, when processing a board | substrate using plasma, the damage given to a board | substrate and the film | membrane to form can be made small, and also the manufacturing method of a semiconductor device which can make a substrate processing temperature low can be provided.

FIG. 1 is a schematic perspective view for explaining the configuration of a substrate processing apparatus suitably used in a preferred embodiment of the present invention. FIG. 2 is a schematic configuration diagram for explaining an example of a processing furnace suitably used in the first preferred embodiment of the present invention and members accompanying the processing furnace, and shows a schematic vertical section of the processing furnace part. FIG. 4 is a schematic longitudinal sectional view taken along line B-B in FIG. 3. 3 is a schematic cross-sectional view taken along line AA of the processing furnace shown in FIG. 4 is a partially enlarged schematic perspective view of a portion C in FIG. FIG. 5 is a partially enlarged schematic longitudinal sectional view of a portion C in FIG. FIG. 6 is a block diagram for explaining a controller suitably used in the substrate processing apparatus according to the first preferred embodiment of the present invention and each member controlled by the controller. FIG. 7A is a schematic longitudinal sectional view for explaining a resist pattern forming method. FIG. 7B is a schematic longitudinal sectional view for explaining a resist pattern forming method. FIG. 7C is a schematic longitudinal sectional view for explaining a resist pattern forming method. FIG. 7D is a schematic longitudinal sectional view for explaining a resist pattern forming method. FIG. 7E is a schematic longitudinal sectional view for explaining a method for forming a resist pattern. FIG. 7F is a schematic longitudinal sectional view for explaining a resist pattern forming method. FIG. 8A is a schematic longitudinal sectional view for explaining another method of forming a pattern. FIG. 8B is a schematic longitudinal sectional view for explaining another method of forming a pattern. FIG. 8C is a schematic longitudinal sectional view for explaining another method of forming a pattern. FIG. 8D is a schematic longitudinal sectional view for explaining another method of forming a pattern. FIG. 9 is a flowchart for explaining a manufacturing process of a silicon oxide film used when forming a pattern. FIG. 10 is a timing chart for explaining a manufacturing process of a silicon oxide film used for forming a pattern. FIG. 11 is a schematic cross-sectional view for explaining a modification of the preferred first embodiment of the present invention. FIG. 12 is a schematic cross-sectional view for explaining a modification of the preferred first embodiment of the present invention. FIG. 13 is a schematic cross-sectional view for explaining a modification of the preferred first embodiment of the present invention. FIG. 14 is a partially enlarged schematic perspective view for explaining the second preferred embodiment of the present invention. FIG. 15 is a partially enlarged schematic longitudinal sectional view for explaining a preferred second embodiment of the present invention. FIG. 16 is a partially enlarged schematic perspective view for explaining a third preferred embodiment of the present invention. FIG. 17 is a partially enlarged schematic longitudinal sectional view for explaining a preferred third embodiment of the present invention. FIG. 18 is a schematic configuration diagram for explaining an example of a processing furnace and members accompanying it suitably used in the fourth preferred embodiment of the present invention, and shows a schematic vertical section of the processing furnace part. FIG. 20 is a schematic longitudinal sectional view taken along line EE in FIG. 19 is a schematic cross-sectional view taken along line DD of the processing furnace shown in FIG. FIG. 20 is a schematic configuration diagram for explaining an example of a processing furnace and members accompanying it suitably used in the fifth preferred embodiment of the present invention, and shows a schematic vertical section of the processing furnace part. FIG. 22 is a schematic longitudinal sectional view taken along line GG in FIG. 21 is a schematic cross-sectional view taken along line FF of the processing furnace shown in FIG. FIG. 22 is a schematic cross-sectional view for explaining a comparative example. FIG. 23 is a table for explaining film forming conditions in the example and the comparative example of the preferred fifth embodiment of the present invention. FIG. 24 is a table for explaining the relationship between high-frequency power and particles in the example and comparative example of the preferred fifth embodiment of the present invention. FIG. 25 is a diagram for explaining the relationship between high-frequency power and particles in the example and comparative example of the preferred fifth embodiment of the present invention.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

  First, the substrate processing apparatus suitably used in each preferred embodiment of the present invention will be described. This substrate processing apparatus is configured as an example of a semiconductor manufacturing apparatus used for manufacturing a semiconductor device.

  In the following description, as an example of the substrate processing apparatus, a case will be described in which a vertical apparatus that performs a film forming process or the like on a substrate is used. However, the present invention is not based on the use of a vertical apparatus, and for example, a single wafer apparatus may be used.

  Referring to FIG. 1, a substrate processing apparatus 101 uses a cassette 110 that contains a wafer 200 as an example of a substrate, and the wafer 200 is made of a material such as semiconductor silicon. The substrate processing apparatus 101 includes a housing 111, and a cassette stage 114 is installed inside the housing 111. The cassette 110 is carried on the cassette stage 114 by an in-process transfer device (not shown) or unloaded from the cassette stage 114.

  The cassette 110 is placed on the cassette stage 114 by an in-process transfer device (not shown) so that the wafer 200 in the cassette 110 maintains a vertical posture and the wafer loading / unloading port of the cassette 110 faces upward. The The cassette stage 114 rotates the cassette 110 clockwise 90 degrees rearward of the casing 111 so that the wafer 200 in the cassette 110 is in a horizontal posture, and the wafer loading / unloading port of the cassette 110 faces the rear of the casing 111. It is configured to be operable.

  A cassette shelf 105 is installed in a substantially central portion of the casing 111 in the front-rear direction, and the cassette shelf 105 is configured to store a plurality of cassettes 110 in a plurality of rows and a plurality of rows. The cassette shelf 105 is provided with a transfer shelf 123 in which the cassette 110 to be transferred by the wafer transfer mechanism 125 is stored.

  A reserve cassette shelf 107 is provided above the cassette stage 114, and is configured to store the cassette 110 in a preliminary manner.

  A cassette carrying device 118 is installed between the cassette stage 114 and the cassette shelf 105. The cassette carrying device 118 includes a cassette elevator 118a that can move up and down while holding the cassette 110, and a cassette carrying mechanism 118b as a carrying mechanism. The cassette carrying device 118 is configured to carry the cassette 110 among the cassette stage 114, the cassette shelf 105, and the spare cassette shelf 107 by an interlocking operation of the cassette elevator 118a and the cassette carrying mechanism 118b.

  A wafer transfer mechanism 125 is installed behind the cassette shelf 105. The wafer transfer mechanism 125 includes a wafer transfer device 125a capable of rotating or linearly moving the wafer 200 in the horizontal direction, and a wafer transfer device elevator 125b for moving the wafer transfer device 125a up and down. The wafer transfer device 125 a is provided with a tweezer 125 c for picking up the wafer 200. The wafer transfer device 125 loads (charges) the wafer 200 to the boat 217 using the tweezers 125c as the placement portion of the wafer 200 by the interlocking operation of the wafer transfer device 125a and the wafer transfer device elevator 125b. The boat 217 is configured to be detached (discharged).

  A processing furnace 202 for heat-treating the wafer 200 is provided above the rear portion of the casing 111, and a lower end portion of the processing furnace 202 is configured to be opened and closed by a furnace port shutter 147.

  Below the processing furnace 202, a boat elevator 115 that raises and lowers the boat 217 with respect to the processing furnace 202 is provided. An arm 128 is connected to the lifting platform of the boat elevator 115, and a seal cap 219 is horizontally installed on the arm 128. The seal cap 219 is configured to support the boat 217 vertically and to close the lower end portion of the processing furnace 202.

  The boat 217 includes a plurality of holding members, and is configured to hold a plurality of (for example, about 50 to 150) wafers 200 horizontally with the centers thereof aligned in the vertical direction. Yes.

  Above the cassette shelf 105, a clean unit 134a for supplying clean air that is a cleaned atmosphere is installed. The clean unit 134 a includes a supply fan (not shown) and a dustproof filter (not shown), and is configured to distribute clean air inside the casing 111.

  A clean unit 134 b that supplies clean air is installed at the left end of the housing 111. The clean unit 134b also includes a supply fan (not shown) and a dustproof filter (not shown), and is configured to circulate clean air in the vicinity of the wafer transfer device 125a, the boat 217, and the like. The clean air is exhausted to the outside of the casing 111 after circulating in the vicinity of the wafer transfer device 125a, the boat 217, and the like.

  Next, main operations of the substrate processing apparatus 101 will be described.

  When the cassette 110 is loaded onto the cassette stage 114 by an in-process transfer device (not shown), the cassette 110 holds the wafer 200 in a vertical position on the cassette stage 114 and the wafer loading / unloading port of the cassette 110 is directed upward. It is placed on the cassette stage 114 so as to face. Thereafter, the cassette 110 is placed in a clockwise direction 90 in the clockwise direction behind the housing 111 so that the wafer 200 in the cassette 110 is placed in a horizontal posture by the cassette stage 114 and the wafer loading / unloading port of the cassette 110 faces the rear of the housing 111. ° Rotated.

  Thereafter, the cassette 110 is automatically transported and delivered by the cassette transport device 118 to the designated shelf position of the cassette shelf 105 or the spare cassette shelf 107 and temporarily stored, and then the cassette shelf 105 or the spare cassette shelf. It is transferred from 107 to the transfer shelf 123 by the cassette transfer device 118 or directly transferred to the transfer shelf 123.

  When the cassette 110 is transferred to the transfer shelf 123, the wafers 200 are picked up from the cassette 110 by the tweezers 125c of the wafer transfer device 125a through the wafer loading / unloading port of the cassette 110 and loaded (charged) into the boat 217. The wafer transfer device 125 a that has delivered the wafer 200 to the boat 217 returns to the cassette 110 and loads the subsequent wafer 200 into the boat 217.

  When a predetermined number of wafers 200 are loaded into the boat 217, the furnace port shutter 147 that has closed the lower end of the processing furnace 202 is opened, and the lower end of the processing furnace 202 is opened. Thereafter, the boat 217 holding the wafer group 200 is loaded into the processing furnace 202 by the ascending operation of the boat elevator 115, and the lower part of the processing furnace 202 is closed by the seal cap 219.

  After loading, arbitrary processing is performed on the wafer 200 in the processing furnace 202. After the processing, the wafer 200 and the cassette 110 are carried out of the casing 111 in the reverse procedure described above.

(First embodiment)
Next, the processing furnace 202 of the first embodiment used in the substrate processing apparatus 101 described above will be described with reference to FIGS.

  2 and 3, the processing furnace 202 is provided with a heater 207 which is a heating device (heating means) for heating the wafer 200. The heater 207 includes a cylindrical heat insulating member whose upper portion is closed and a plurality of heater wires, and has a unit configuration in which the heater wires are provided on the heat insulating member. Inside the heater 207, a quartz reaction tube 203 for processing the wafer 200 is provided concentrically with the heater 207.

  Below the reaction tube 203, a seal cap 219 is provided as a furnace port lid capable of airtightly closing the lower end opening of the reaction tube 203. The seal cap 219 is brought into contact with the lower end of the reaction tube 203 from the lower side in the vertical direction. The seal cap 219 is made of a metal such as stainless steel and has a disk shape. An airtight member (hereinafter referred to as an O-ring) 220 is disposed between an annular flange provided at the lower opening end of the reaction tube 203 and the upper surface of the seal cap 219, and the space between them is hermetically sealed. At least the processing chamber 201 is formed by the reaction tube 203 and the seal cap 219.

  A boat support 218 that supports the boat 217 is provided on the seal cap 219. The boat support 218 is made of a heat-resistant material such as quartz or silicon carbide, and functions as a heat insulating portion and is a support that supports the boat. The boat 217 is erected on the boat support 218. The boat 217 is made of a heat resistant material such as quartz or silicon carbide. The boat 217 includes a bottom plate 210 fixed to the boat support 218 and a top plate 211 disposed above the bottom plate 210, and a plurality of support columns 212 are constructed between the bottom plate 210 and the top plate 211. (See FIG. 1). A plurality of wafers 200 are held on the boat 217. The plurality of wafers 200 are loaded in multiple stages in the tube axis direction of the reaction tube 203 in a state where the horizontal posture is maintained while keeping the center of each other while keeping a certain distance from each other, and are supported by the columns 212 of the boat 217.

  A boat rotation mechanism 267 that rotates the boat is provided on the side of the seal cap 219 opposite to the processing chamber 201. The rotation shaft 265 of the boat rotation mechanism 267 passes through the seal cap and is connected to the boat support 218, and the wafer 200 is rotated by rotating the boat 217 via the boat support 218 by the rotation mechanism 267.

  The seal cap 219 is raised and lowered in the vertical direction by a boat elevator 115 as an elevating mechanism provided outside the reaction tube 203, so that the boat 217 can be carried into and out of the processing chamber 201.

  In the processing furnace 202 described above, in a state where a plurality of wafers 200 to be batch-processed are stacked on the boat 217 in multiple stages, the boat 217 is inserted into the processing chamber 201 while being supported by the boat support 218, and the heater 207 is The wafer 200 inserted into the processing chamber 201 is heated to a predetermined temperature.

  Referring to FIGS. 2 and 3, three gas supply pipes 310, 320, and 330 for supplying source gas are connected.

  In the processing chamber 201, nozzles 410, 420, and 430 are provided. The nozzles 410, 420, and 430 are provided through the lower part of the reaction tube 203. A gas supply pipe 310 is connected to the nozzle 410, a gas supply pipe 320 is connected to the nozzle 420, and a gas supply pipe 330 is connected to the nozzle 430.

  The gas supply pipe 310 includes, in order from the upstream side, a valve 314 that is an open / close valve, a liquid mass flow controller 312 that is a flow rate control device for a liquid source, a vaporizer 315 that is a vaporization unit (vaporizer), and a valve 313 that is an open / close valve. Is provided.

  The downstream end of the gas supply pipe 310 is connected to the end of the nozzle 410. The nozzle 410 is an arc-shaped space between the inner wall of the reaction tube 203 and the wafer 200, and is provided so as to rise upward from the lower portion of the inner wall of the reaction tube 203 in the stacking direction of the wafer 200. . The nozzle 410 is configured as an L-shaped long nozzle. A large number of gas supply holes 411 for supplying a raw material gas are provided on the side surface of the nozzle 410. The gas supply hole 411 is opened to face the center of the reaction tube 203. The gas supply holes 411 have the same or inclined opening area from the lower part to the upper part, and are provided at the same pitch.

  Further, the gas supply pipe 310 is provided with a vent line 610 and a valve 612 connected to an exhaust pipe 232 described later between the valve 313 and the vaporizer 315.

  A gas supply system 301 is mainly constituted by the gas supply pipe 310, the valve 314, the liquid mass flow controller 312, the vaporizer 315, the valve 313, the nozzle 410, the vent line 610, and the valve 612.

  A carrier gas supply pipe 510 for supplying a carrier gas (inert gas) is connected to the gas supply pipe 310 on the downstream side of the valve 313. The carrier gas supply pipe 510 is provided with a mass flow controller 512 and a valve 513. A carrier gas supply system (inert gas supply system) 501 is mainly configured by the carrier gas supply pipe 510, the mass flow controller 512, and the valve 513.

  In the gas supply pipe 310, the flow rate of the liquid source is adjusted by the liquid mass flow controller 312, supplied to the vaporizer 315, vaporized, and supplied as the source gas.

  While the source gas is not supplied to the processing chamber 201, the valve 313 is closed, the valve 612 is opened, and the source gas is allowed to flow to the vent line 610 through the valve 612.

  When supplying the source gas to the processing chamber 201, the valve 612 is closed, the valve 313 is opened, and the source gas is supplied to the gas supply pipe 310 downstream of the valve 313. On the other hand, the flow rate of the carrier gas is adjusted by the mass flow controller 512 and supplied from the carrier gas supply pipe 510 via the valve 513, and the raw material gas merges with this carrier gas downstream of the valve 313 and passes through the nozzle 410. 201.

  The gas supply pipe 320 is provided with a mass flow controller 322 as a flow rate control device and a valve 323 as an on-off valve in order from the upstream side.

  The downstream end of the gas supply pipe 320 is connected to the end of the nozzle 420. The nozzle 420 is provided in a buffer chamber 423 which is a gas dispersion space (discharge chamber, discharge space). In the buffer chamber 423, electrode protection tubes 451 and 452 described later are further provided. The nozzle 420, the electrode protection tube 451, and the electrode protection tube 452 are arranged in this order in the buffer chamber 423.

  The buffer chamber 423 is formed by the inner wall of the reaction tube 203 and the buffer chamber wall 424. The buffer chamber wall 424 is provided in an arc-shaped space between the inner wall of the reaction tube 203 and the wafer 200 in a portion extending from the lower part to the upper part of the inner wall of the reaction tube 203 along the loading direction of the wafer 200. A gas supply hole 425 for supplying a gas is provided in a wall of the buffer chamber wall 424 adjacent to the wafer 200. The gas supply hole 425 is provided between the electrode protection tube 451 and the electrode protection tube 452. The gas supply hole 425 is opened to face the center of the reaction tube 203. A plurality of gas supply holes 425 are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided at the same pitch.

  The nozzle 420 is provided on one end side of the buffer chamber 423 so as to rise upward in the stacking direction of the wafer 200 along the lower portion of the inner wall of the reaction tube 203. The nozzle 420 is configured as an L-shaped long nozzle. A gas supply hole 421 for supplying gas is provided on the side surface of the nozzle 420. The gas supply hole 421 opens so as to face the center of the buffer chamber 423. A plurality of gas supply holes 421 are provided from the lower part to the upper part of the reaction tube 203, similarly to the gas supply holes 425 of the buffer chamber 423. Each of the gas supply holes 421 has the same opening area with the same opening area from the upstream side (lower part) to the downstream side (upper part) when the differential pressure in the buffer chamber 423 and the nozzle 420 is small. The pitch may be set, but when the differential pressure is large, the opening area may be sequentially increased from the upstream side toward the downstream side, or the pitch may be decreased.

  In the present embodiment, by adjusting the opening area and the opening pitch of the gas supply holes 421 of the nozzle 420 from the upstream side to the downstream side as described above, first, the flow velocity from each of the gas supply holes 421 is adjusted. Although there is a difference, the gas with the same flow rate is ejected. The gas ejected from each of the gas supply holes 421 is once introduced into the buffer chamber 423, and the difference in gas flow velocity is made uniform in the buffer chamber 423.

  That is, the gas ejected into the buffer chamber 423 from each of the gas supply holes 421 of the nozzle 420 is reduced in the particle velocity of each gas in the buffer chamber 423 and then into the processing chamber 201 from the gas supply hole 425 of the buffer chamber 423. To erupt. Thus, when the gas ejected into the buffer chamber 423 from each of the gas supply holes 421 of the nozzle 420 is ejected into the processing chamber 201 from each of the gas supply holes 425 of the buffer chamber 423, a uniform flow rate and flow velocity are obtained. It becomes gas which has.

  Further, the gas supply pipe 320 is provided with a vent line 620 and a valve 622 connected to an exhaust pipe 232 described later between the valve 323 and the mass flow controller 322.

  A gas supply system 302 is mainly configured by a gas supply pipe 320, a mass flow controller 322, a valve 323, a nozzle 420, a buffer chamber 423, a vent line 620, and a valve 622.

  Further, a carrier gas supply pipe 520 for supplying a carrier gas (inert gas) is connected to the gas supply pipe 320 on the downstream side of the valve 323. The carrier gas supply pipe 520 is provided with a mass flow controller 522 and a valve 523. A carrier gas supply system (inert gas supply system) 502 is mainly configured by the carrier gas supply pipe 520, the mass flow controller 522, and the valve 523.

  In the gas supply pipe 320, the gas source gas is supplied with the flow rate adjusted by the mass flow controller 322.

  While the source gas is not supplied to the processing chamber 201, the valve 323 is closed, the valve 622 is opened, and the source gas is allowed to flow to the vent line 620 via the valve 622.

  When supplying the source gas to the processing chamber 201, the valve 622 is closed, the valve 323 is opened, and the source gas is supplied to the gas supply pipe 320 downstream of the valve 323. On the other hand, the flow rate of the carrier gas is adjusted by the mass flow controller 522 and supplied from the carrier gas supply pipe 520 via the valve 523, and the raw material gas merges with this carrier gas on the downstream side of the valve 323, and the nozzle 420 and the buffer chamber 423 are passed through. And supplied to the processing chamber 201.

  The gas supply pipe 330 is provided with a mass flow controller 332 that is a flow rate control device and a valve 333 that is an on-off valve in order from the upstream side.

  The downstream end of the gas supply pipe 330 is connected to the end of the nozzle 430. The nozzle 430 is provided in a buffer chamber 433 that is a gas dispersion space (discharge chamber, discharge space). In the buffer chamber 433, electrode protection tubes 461 and 462, which will be described later, are further provided. The nozzle 430, the electrode protection tube 461, and the electrode protection tube 462 are arranged in this order in the buffer chamber 433.

  The buffer chamber 433 is formed by the inner wall of the reaction tube 203 and the buffer chamber wall 434. The buffer chamber wall 434 is provided in an arc-shaped space between the inner wall of the reaction tube 203 and the wafer 200 in a portion extending from the lower part to the upper part of the inner wall of the reaction tube 203 along the loading direction of the wafer 200. A gas supply hole 435 for supplying a gas is provided in a wall of the buffer chamber wall 434 adjacent to the wafer 200. The gas supply hole 435 is provided between the electrode protection tube 461 and the electrode protection tube 462. The gas supply hole 435 is opened to face the center of the reaction tube 203. A plurality of gas supply holes 435 are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided at the same pitch.

  The nozzle 430 is provided on one end side of the buffer chamber 433 so as to rise upward in the stacking direction of the wafer 200 along the upper portion from the lower portion of the inner wall of the reaction tube 203. The nozzle 430 is configured as an L-shaped long nozzle. A gas supply hole 431 for supplying a gas is provided on a side surface of the nozzle 430. The gas supply hole 431 is opened to face the center of the buffer chamber 433. Similar to the gas supply hole 435 of the buffer chamber 433, a plurality of gas supply holes 431 are provided from the lower part to the upper part of the reaction tube 203. Each of the gas supply holes 431 has the same opening area from the upstream side (lower part) to the downstream side (upper part) with the same opening area when the differential pressure between the buffer chamber 433 and the nozzle 430 is small. The pitch may be set, but when the differential pressure is large, the opening area may be sequentially increased from the upstream side toward the downstream side, or the pitch may be decreased.

  In the present embodiment, by adjusting the opening area and the opening pitch of the gas supply holes 431 of the nozzle 430 from the upstream side to the downstream side as described above, first, the flow velocity from each of the gas supply holes 431 is adjusted. Although there is a difference, the gas with the same flow rate is ejected. Then, the gas ejected from each of the gas supply holes 431 is once introduced into the buffer chamber 433, and the flow velocity difference of the gas is made uniform in the buffer chamber 433.

  That is, the gas ejected into the buffer chamber 433 from each of the gas supply holes 431 of the nozzle 430 is reduced in the particle velocity of each gas in the buffer chamber 433, and then the gas supply holes 435 in the buffer chamber 433 enter the processing chamber 201. To erupt. As a result, when the gas ejected into the buffer chamber 433 from each of the gas supply holes 431 of the nozzle 430 is ejected into the processing chamber 201 from each of the gas supply holes 435 of the buffer chamber 433, a uniform flow rate and flow rate are obtained. It becomes gas which has.

  Further, the gas supply pipe 330 is provided with a vent line 630 and a valve 632 connected to an exhaust pipe 232 described later between the valve 333 and the mass flow controller 332.

  A gas supply system 303 is mainly configured by the gas supply pipe 330, the mass flow controller 332, the valve 333, the nozzle 430, the buffer chamber 433, the vent line 630, and the valve 632.

  A carrier gas supply pipe 530 for supplying a carrier gas (inert gas) is connected to the gas supply pipe 330 on the downstream side of the valve 333. The carrier gas supply pipe 530 is provided with a mass flow controller 532 and a valve 533. A carrier gas supply system (inert gas supply system) 503 is mainly configured by the carrier gas supply pipe 530, the mass flow controller 532, and the valve 533.

  In the gas supply pipe 330, the gas source gas is supplied with its flow rate adjusted by the mass flow controller 332.

  While the source gas is not supplied to the processing chamber 201, the valve 333 is closed, the valve 632 is opened, and the source gas is allowed to flow to the vent line 630 through the valve 632.

  When supplying the source gas to the processing chamber 201, the valve 632 is closed, the valve 333 is opened, and the source gas is supplied to the gas supply pipe 330 downstream of the valve 333. On the other hand, the flow rate of the carrier gas is adjusted by the mass flow controller 532 and supplied from the carrier gas supply pipe 530 via the valve 533, and the raw material gas merges with this carrier gas on the downstream side of the valve 333, and passes through the nozzle 430 and the buffer chamber 433. And supplied to the processing chamber 201.

  In the buffer chamber 423, a rod-shaped electrode 471 and a rod-shaped electrode 472 having an elongated structure are disposed along the stacking direction of the wafers 200 from the bottom to the top of the reaction tube 203. The rod-shaped electrode 471 and the rod-shaped electrode 472 are each provided in parallel with the nozzle 420. The rod-shaped electrode 471 and the rod-shaped electrode 472 are protected by being covered with electrode protection tubes 451 and 452 which are protection tubes that protect the electrodes from the upper part to the lower part, respectively. The rod-shaped electrode 471 is connected to a radio frequency (RF) power source 270 via a matching unit 271, and the rod-shaped electrode 472 is connected to a ground 272 that is a reference potential. As a result, plasma is generated in the plasma generation region between the rod-shaped electrode 471 and the rod-shaped electrode 472. The first plasma generation structure 429 is mainly configured by the rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451, the electrode protection tube 452, the buffer chamber 423, and the gas supply hole 425. The rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451, the electrode protection tube 452, the matching unit 271, and the high-frequency power source 270 constitute a first plasma source as a plasma generator (plasma generation unit). The first plasma source functions as an activation mechanism that activates gas with plasma. The buffer chamber 423 functions as a plasma generation chamber.

  In the buffer chamber 433, rod-shaped electrodes 481 and rod-shaped electrodes 482 having an elongated structure are disposed along the stacking direction of the wafers 200 from the lower part to the upper part of the reaction tube 203. Each of the rod-shaped electrode 481 and the rod-shaped electrode 482 is provided in parallel with the nozzle 430. Each of the rod-shaped electrode 481 and the rod-shaped electrode 482 is protected by being covered with electrode protection tubes 461 and 462 that are protection tubes that protect the electrode from the upper part to the lower part. The rod-shaped electrode 481 is connected to the high-frequency power source 270 via the matching unit 271, and the rod-shaped electrode 482 is connected to the ground 272 that is a reference potential. As a result, plasma is generated in the plasma generation region between the rod-shaped electrode 481 and the rod-shaped electrode 482. A second plasma generation structure 439 is mainly configured by the rod-shaped electrode 481, the rod-shaped electrode 482, the electrode protection tube 461, the electrode protection tube 462, the buffer chamber 433, and the gas supply hole 435. A second plasma source as a plasma generator (plasma generator) is mainly configured by the rod-shaped electrode 481, the rod-shaped electrode 482, the electrode protection tube 461, the electrode protection tube 462, the matching unit 271, and the high-frequency power source 270. The second plasma source functions as an activation mechanism that activates the gas with plasma. The buffer chamber 433 functions as a plasma generation chamber.

  4 and 5, the electrode protection tube 461 and the electrode protection tube 462 are located at a height near the lower portion of the boat support base 218 through the through holes 204 and 205 provided in the reaction tube 203, respectively. The buffer chamber 423 is inserted. The electrode protection tube 461 and the electrode protection tube 462 are fixed to the reaction tube 203 at the positions of the through holes 204 and 205. The electrode protection tube 461 and the electrode protection tube 462 are provided through the holes 402 and 403 of the attachment plate 401 in the buffer chamber 423, respectively, and are fixed by the attachment plate 401. The mounting plate 401 is fixed to the reaction tube 203 and the buffer chamber wall 424. The electrode protection tube 451 and the electrode protection tube 452 have the same structure as the electrode protection tube 461 and the electrode protection tube 462.

  The electrode protection tube 451 and the electrode protection tube 452 have a structure in which the rod-shaped electrode 471 and the rod-shaped electrode 472 can be inserted into the buffer chamber 423 while being isolated from the atmosphere of the buffer chamber 423, respectively. The electrode protection tube 461 and the electrode protection tube 462 have a structure in which the rod-shaped electrode 481 and the rod-shaped electrode 482 can be inserted into the buffer chamber 433 while being isolated from the atmosphere of the buffer chamber 433, respectively. When the inside of the electrode protection tubes 451, 452, 461, 462 is the same atmosphere as the outside air (atmosphere), the rod-shaped electrodes 471, 472, 481, 482 inserted into the electrode protection tubes 451, 452, 461, 462, respectively, are heaters. It is oxidized by the heat of 207. Therefore, the inside of the electrode protection tubes 451, 452, 461, 462 is filled or purged with an inert gas such as nitrogen to keep the oxygen concentration sufficiently low to prevent oxidation of the rod-shaped electrodes 471, 472, 481, 482. An inert gas purge mechanism is provided.

  Note that the plasma generated by this embodiment is called remote plasma. Remote plasma is a plasma process in which plasma generated between electrodes is transported to the surface of an object by gas flow or the like. In this embodiment, since two rod-shaped electrodes 471 and 472 are accommodated in the buffer chamber 423 and the two rod-shaped electrodes 481 and 482 are accommodated in the buffer chamber 433, ions that cause damage to the wafer 200. However, the structure is such that it does not easily leak into the processing chamber 201 outside the buffer chambers 423 and 433. Further, an electric field is generated so as to surround the two rod-shaped electrodes 471 and 472 (that is, so as to surround the electrode protection tubes 451 and 452 in which the two rod-shaped electrodes 471 and 472 are respectively accommodated), and plasma is generated. An electric field is generated so as to surround the two rod-shaped electrodes 481 and 482 (that is, so as to surround the electrode protection tubes 461 and 462 in which the two rod-shaped electrodes 481 and 482 are accommodated, respectively), and plasma is generated. . The active species contained in the plasma is supplied from the outer periphery of the wafer 200 toward the center of the wafer 200 through the gas supply hole 425 of the buffer chamber 423 and the gas supply hole 435 of the buffer chamber 433. Further, in the case of a vertical batch apparatus in which a plurality of wafers 200 are stacked in a stack shape with the main surface parallel to a horizontal plane as in the present embodiment, the inner wall surface of the reaction tube 203, that is, close to the wafer 200 to be processed. As a result of the buffer chambers 423 and 433 being arranged at the positions, there is an effect that the generated active species easily reach the surface of the wafer 200 without being deactivated.

  2 and 3, an exhaust port 230 is provided in the lower part of the reaction tube. The exhaust port 230 is connected to the exhaust pipe 231. The gas supply hole 411 and the exhaust port 230 of the nozzle 410 are provided at positions facing each other across the wafer 200 (on the opposite side by 180 degrees). In this way, the source gas supplied from the gas supply hole 411 flows across the main surface of the wafer 200 toward the exhaust pipe 231, and the source gas is supplied uniformly over the entire surface of the wafer 200. This makes it easier to form a more uniform film on the wafer 200.

  In the present embodiment, a first plasma source mainly composed of a rod-shaped electrode 471, a rod-shaped electrode 472, an electrode protection tube 451, an electrode protection tube 452, a matching unit 271, and a high-frequency power source 270, and mainly a rod-shaped electrode 481, a rod-shaped electrode 482, an electrode protection tube 461, an electrode protection tube 462, a matching unit 271, and a second plasma source including a high-frequency power source 270. In order to lower the processing temperature of the wafer 200 using plasma, it is necessary to increase the high-frequency power when forming the plasma. However, if the high-frequency power is increased, damage to the wafer 200 and the film to be formed becomes large. turn into. On the other hand, in this embodiment, since two plasma sources, the first plasma source and the second plasma source, are provided, the high frequency supplied to each plasma source is compared to the case where there is one plasma source. Even if the power is small, a sufficient amount of plasma can be generated. Therefore, when the wafer 200 is processed using plasma, damage to the wafer 200 and a film to be formed can be reduced, and the processing temperature of the wafer 200 can be lowered.

  The first plasma generation structure 429 mainly composed of the rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451, the electrode protection tube 452, the buffer chamber 423, and the gas supply hole 425, and mainly the rod-shaped electrode 481. The second plasma generation structure 439 including the rod-shaped electrode 482, the electrode protection tube 461, the electrode protection tube 462, the buffer chamber 433, and the gas supply hole 435 is a line passing through the center of the wafer 200 (center of the reaction tube 203). Therefore, the plasma is easily supplied uniformly from the two plasma generation structures to the entire surface of the wafer 200, and a uniform film can be formed on the wafer 200.

  Further, since the exhaust port 230 is also provided on a line passing through the center of the wafer 200 (the center of the reaction tube 203), the plasma is easily supplied uniformly over the entire surface of the wafer 200, and a uniform film is formed on the wafer 200. Can be formed. Further, since the gas supply hole 411 of the nozzle 410 is also provided on a line passing through the center of the wafer 200 (the center of the reaction tube 203), the source gas is easily supplied uniformly over the entire surface of the wafer 200. A more uniform film on 200 can be formed.

  Further, the distance between the gas supply hole 411 of the nozzle 410 and the gas supply hole 425 of the buffer chamber 423 and the distance between the gas supply hole 411 of the nozzle 410 and the gas supply hole 435 of the buffer chamber 433 are equal. Since the gas supply hole 411, the gas supply hole 425, and the gas supply hole 435 are disposed, a more uniform film can be formed on the wafer 200.

  Referring to FIGS. 2 and 3 again, an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201 is connected to the exhaust port 230 at the bottom of the reaction tube. The exhaust pipe 231 is evacuated via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 243 as a pressure regulator (pressure adjustment unit). A vacuum pump 246 serving as an exhaust device is connected, and the processing chamber 201 can be evacuated so that the pressure in the processing chamber 201 becomes a predetermined pressure (degree of vacuum). An exhaust pipe 232 on the downstream side of the vacuum pump 246 is connected to a waste gas treatment device (not shown) or the like. The APC valve 243 can open and close the valve to evacuate / stop the evacuation in the processing chamber 201, and further adjust the valve opening to adjust the conductance to adjust the pressure in the processing chamber 201. It is an open / close valve. An exhaust system is mainly configured by the exhaust pipe 231, the APC valve 243, the vacuum pump 246, and the pressure sensor 245.

  A temperature sensor 263 as a temperature detector is installed in the reaction tube 203. By adjusting the power supplied to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature in the processing chamber 201 can be adjusted. It is configured to have a desired temperature distribution. The temperature sensor 263 is configured in an L shape, is introduced through the manifold 209, and is provided along the inner wall of the reaction tube 203.

  A boat 217 is provided at the center in the reaction tube 203. The boat 217 can be moved up and down (in and out) with respect to the reaction tube 203 by the boat elevator 115. When the boat 217 is introduced into the reaction tube 203, the lower end portion of the reaction tube 203 is hermetically sealed with the seal cap 219 via the O-ring 220. The boat 217 is supported on a boat support 218. In order to improve the uniformity of processing, the boat rotation mechanism 267 is driven to rotate the boat 217 supported by the boat support 218.

  Referring to FIG. 6, the controller 280 includes a display 288 that displays an operation menu and the like, and an operation input unit 290 that includes a plurality of keys and inputs various information and operation instructions. . The controller 280 stores a CPU 281 that controls the overall operation of the substrate processing apparatus 101, a ROM 282 that stores various programs including a control program in advance, a RAM 283 that temporarily stores various data, and various data. An HDD 284 to be held, a display driver 287 that controls display of various types of information on the display 288 and receives operation information from the display 288, an operation input detection unit 289 that detects an operation state of the operation input unit 290, and a temperature described later Various members such as a control unit 291, a pressure control unit 294 described later, a vacuum pump 246, a boat rotation mechanism 267, a boat elevator 115, mass flow controllers 312, 322, 332, 512, 522, 532, a valve control unit 299 described later, and various types Sending and receiving information A communication interface (I / F) unit 285 for performing, and a.

  The CPU 281, ROM 282, RAM 283, HDD 284, display driver 287, operation input detection unit 289, and communication I / F unit 285 are connected to each other via a system bus BUS 286. Therefore, the CPU 281 can access the ROM 282, RAM 283, and HDD 284, control display of various information on the display 288 via the display driver 287, grasp operation information from the display 288, communication I / F It is possible to control transmission / reception of various information to / from each member via the unit 285. Further, the CPU 281 can grasp the operation state of the user with respect to the operation input unit 290 via the operation input detection unit 289.

  The temperature control unit 291 is a communication I / F unit 293 that transmits and receives various information such as set temperature information between the heater 207, the heating power source 250 that supplies power to the heater 207, the temperature sensor 263, and the controller 280. And a heater control unit 292 that controls the power supplied from the heating power source 250 to the heater 207 based on the received set temperature information, temperature information from the temperature sensor 263, and the like. The heater control unit 292 is also realized by a computer. The communication I / F unit 293 of the temperature control unit 291 and the communication I / F unit 285 of the controller 280 are connected by a cable 751.

  The pressure control unit 294 includes a communication I / F unit 296 that transmits and receives various types of information such as set pressure information and APC valve 243 opening / closing information between the APC valve 243, the pressure sensor 245, and the controller 280, and the received setting. An APC valve control unit 295 that controls the opening and closing and the opening degree of the APC valve 243 based on the pressure information, the opening and closing information of the APC valve 243, the pressure information from the pressure sensor 245, and the like. The APC valve control unit 295 is also realized by a computer. The communication I / F unit 296 of the pressure control unit 294 and the communication I / F unit 285 of the controller 280 are connected by a cable 752.

  The vacuum pump 246, the boat rotation mechanism 267, the boat elevator 115, the liquid mass flow controller 312, the mass flow controllers 322, 332, 512, 522, 532, the high frequency power supply 270, and the communication I / F unit 285 of the controller 280 are cables 753, 754, respectively. , 755, 756, 757, 758, 759, 760, 761, and 762.

  The valve control unit 299 includes valves 313, 314, 323, 333, 513, 523, 533, 612, 622, 632 and valves 313, 314, 323, 333, 513, 523, 533, 612, 622, which are air valves. And an electromagnetic valve group 298 that controls the supply of air to 632. The electromagnetic valve group 298 includes electromagnetic valves 297 corresponding to the valves 313, 314, 323, 333, 513, 523, 533, 612, 622, and 632, respectively. The electromagnetic valve group 298 and the communication I / F unit 285 of the controller 280 are connected by a cable 763.

  As described above, the liquid mass flow controller 312, the mass flow controllers 322, 332, 512, 522, 532, the valves 313, 314, 323, 333, 513, 523, 533, 612, 622, 632, the APC valve 243, for heating Each member such as the power source 250, the temperature sensor 263, the pressure sensor 245, the vacuum pump 246, the boat rotation mechanism 267, the boat elevator 115, and the high frequency power source 270 is connected to the controller 280. The controller 280 controls the flow rate of the liquid mass flow controller 312, the mass flow controllers 322, 332, 512, 522, 532, the opening / closing operation control of the valves 313, 314, 323, 333, 513, 523, 533, 612, 622, 632, APC Pressure control via opening / closing control of the valve 243 and opening degree adjustment operation based on pressure information from the pressure sensor 245, and adjustment of power supply amount from the heating power source 250 to the heater 207 based on temperature information from the temperature sensor 263 Temperature control, control of high frequency power supplied from the high frequency power supply 270, start / stop control of the vacuum pump 246, rotation speed adjustment control of the boat rotation mechanism 267, control of raising / lowering operation of the boat elevator 115, and the like. Yes.

  Next, an example of a manufacturing process of a semiconductor device (device) that manufactures a large scale integrated circuit (LSI) using the above-described substrate processing apparatus will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 280.

  An LSI is manufactured through an assembly process, a test process, and a reliability test process after performing a wafer process for processing on a silicon wafer. The wafer process is divided into a substrate process in which processing such as oxidation and diffusion is performed on a silicon wafer and a wiring process in which wiring is formed on the surface. In the wiring process, cleaning, heat treatment, film formation, etc. are performed mainly in the lithography process. Repeatedly. In the lithography process, a resist pattern is formed, and the lower layer of the pattern is processed by etching using the pattern as a mask.

  Next, an example of a processing sequence for forming a resist pattern on the wafer 200 will be described with reference to FIGS.

In this example, a double patterning technology (DPT: Double Patterning Technology) that forms a pattern by performing patterning twice or more is used. According to this DPT, a pattern finer than a pattern formed by one patterning can be formed. In the processing sequence, a first resist pattern forming step for forming a first resist pattern 705 on the wafer 200, and a silicon oxide film forming step for forming a silicon oxide film 706 as a first resist protective film on the first resist pattern 705, and Then, the second resist pattern process for forming the second resist pattern 709 on the silicon oxide film 706 is performed in this order. Hereinafter, each step will be described.

<First resist pattern forming step>
In the first resist pattern forming step, a first resist pattern 705 is formed on the hard mask 702 formed on the wafer 200. First, a first resist 703 is applied on the hard mask 702 formed on the wafer 200 (see FIG. 7A).

  Next, the first resist pattern 705 is formed by performing baking, selective exposure using a mask pattern with a light source such as an ArF excimer light source (193 nm) or a KrF excimer light source (248 nm), development, and the like (FIG. 7B). reference).

<First resist protective film forming step>
In the first resist protective film forming step, a silicon oxide thin film 706 is formed on the first resist pattern 705 formed in the first resist pattern forming step and on the hard mask 702 on which the first resist pattern 705 is not formed. A resist film 705 is formed as a protective film (see FIG. 7C). As a result, the shape change and film quality change of the first resist pattern 705 are prevented and protected from the solvent of the second resist 707 described later. The formation of the silicon oxide film 706 is performed using the substrate processing apparatus 101 described above, details of which will be described later.

<Second resist pattern forming step>
In the second resist pattern forming step, a position on the silicon oxide film 706 formed on the first resist pattern 705 in the first resist protective film forming step is different from the position where the first resist pattern 705 is formed. Then, a second resist pattern 709 is formed. In this step, the same processing as in the first resist pattern forming step is performed.

  First, a second resist 707 is applied on the silicon oxide film 706 that is a protective film of the first resist pattern 705 (see FIG. 7D).

  Next, baking, exposure with ArF excimer light source (193 nm), KrF excimer light source (248 nm), development, and the like are performed to form a second resist pattern 709 (see FIG. 7E).

  As described above, a fine resist pattern can be formed by performing the first resist pattern forming step, the first resist protective film forming step, and the second resist pattern forming step.

  In addition, after the second resist pattern 709 is formed and a predetermined process (for example, dimension inspection, alignment inspection, rework process, etc.) is performed, in order to remove the silicon oxide film 706 as necessary, the following process is performed. Such a first resist protective film removing step may be performed.

<First resist protective film removal step>
In the first resist protective film removing step, the silicon oxide film 706 as the first resist protective film formed in the first resist protective film forming step is removed (see FIG. 7F).

  There are two removal methods, a wet etching method and a dry etching method. As an etchant for removing the silicon oxide film 706 by wet etching, for example, a hydrofluoric acid (HF) solution, such as a dilute HF solution, can be used. Further, when the silicon oxide film 604 is removed by a dry etching method, for example, oxygen plasma or the like can be used.

  In the above description, the process of forming the resist pattern twice has been described. However, the resist pattern may be formed three or more times. In that case, the resist pattern forming process and the silicon oxide film forming process are repeated a predetermined number of times. . The formation of the silicon oxide film is also performed using the substrate processing apparatus 101 described above, and details will be described later.

  When forming the resist pattern three or more times, the first resist pattern forming step → the first resist protective film (first silicon oxide film) forming step → the second resist pattern forming step → the first resist protective film, if necessary. (First silicon oxide film) removal → third resist pattern forming step → second resist protective film (second silicon oxide film) forming step → fourth resist pattern forming step → second resist protective film (second silicon oxide film) The silicon oxide film, which is a protective film, may be removed one by one, such as removal → fifth resist pattern forming step →.

  In the above description, the first resist pattern 705 is formed on the hard mask 702 formed on the wafer 200, but the hard mask 702 may not be provided. Also, ACL (amorphous carbon layer) may be used instead of the resist. In the case of using ACL, the processing temperature for forming the silicon oxide film for protecting ACL may be higher than that of the resist, and may be 200 ° C. or lower. If it is 200 degrees C or less, it can prevent effectively that ACL changes with heating.

  Next, another example of a processing sequence for forming a resist pattern on the wafer 200 will be described with reference to FIGS.

  In this example, a self-aligned double patterning technology (SASP) that forms a fine pattern using a sidewall is used.

  First, a resist 721 is formed on the wafer 200 and patterned by a lithography process to form a first resist pattern 722 (see FIG. 8A).

  Next, a silicon oxide film 723 is formed over the first resist pattern 722 at a low temperature of 200 ° C. or lower (see FIG. 8B). The formation of the silicon oxide film 723 is performed using the substrate processing apparatus 101 described above, details of which will be described later.

  Next, anisotropic etching of the silicon oxide film 723 is performed by dry etching or the like, and the silicon oxide film 723 is left as the sidewall 724 only on the sidewall of the resist pattern 722 (see FIG. 8C).

  Next, using the sidewall 724 of the silicon oxide film as a mask, the exposed resist 721 is anisotropically etched in the vertical direction by dry etching or the like to form a fine pattern 725 made of the resist 721 (see FIG. 8D).

In place of the resist, ACL (amorphous carbon layer) may be used. In the case of using ACL, the processing temperature for forming the silicon oxide film for protecting ACL may be higher than that of the resist, and may be 200 ° C. or lower. If it is 200 degrees C or less, it can prevent effectively that ACL changes with heating.

  Next, an example in which the silicon oxide film 706 as the first resist protective film and the silicon oxide film 723 as the etching mask are formed at a low temperature of 200 ° C. or lower using the substrate processing apparatus 101 will be described.

  In a conventional CVD method or ALD method, for example, in the case of a CVD method, a plurality of types of gases including a plurality of elements constituting a film to be formed are supplied simultaneously, and in the case of an ALD method, a film to be formed is formed. A plurality of types of gases containing a plurality of elements are supplied alternately. Then, a silicon oxide film (SiO film) or a silicon nitride film (SiN film) is formed by controlling processing conditions such as supply flow rate, supply time, and plasma power during supply. In these techniques, for example, when a SiO film is formed, the composition ratio of the film is O / Si≈2 which is a stoichiometric composition, and when a SiN film is formed, for example, the composition ratio of the film is the stoichiometric amount. The supply conditions are controlled for the purpose of satisfying the theoretical composition N / Si≈1.33.

  On the other hand, it is possible to control the supply conditions for the purpose of setting the composition ratio of the film to be formed to a predetermined composition ratio different from the stoichiometric composition. That is, the supply conditions are controlled for the purpose of making at least one element out of the plurality of elements constituting the film to be formed more excessive than the other elements with respect to the stoichiometric composition. It is also possible to perform film formation while controlling the ratio of a plurality of elements constituting the film to be formed as described above, that is, the composition ratio of the film. Hereinafter, a sequence example in which a silicon oxide film having a stoichiometric composition is formed by alternately supplying a plurality of types of gases containing different types of elements by the ALD method will be described.

Here, silicon (Si) is used as the first element, oxygen (O) is used as the second element, and BTBAS (SiH ₂ (NH (C ₄ )) is a silicon-containing raw material as a raw material containing the first element. A silicon oxide film as an insulating film is formed on the substrate by using BTBAS gas obtained by vaporizing H ₉ ) ₂ , _binary butylaminosilane) and using O ₂ gas which is an oxygen-containing gas as a reaction gas containing the second element. An example will be described with reference to Fig. 9 to Fig. 10. Fig. 9 is a flowchart for explaining a manufacturing process of a silicon oxide film used for forming a pattern. 6 is a timing chart for explaining a manufacturing process of a silicon oxide film used in the first embodiment.

  First, the heating power source 250 that supplies power to the heater 207 is controlled to maintain the inside of the processing chamber 201 at a temperature of 200 ° C. or lower, more preferably 100 ° C. or lower, for example, 100 ° C. deep.

  Thereafter, the plurality of wafers 200 on which the first resist pattern 705 is formed (see FIG. 7B) or the plurality of wafers 200 on which the first resist pattern 722 is formed (see FIG. 8A) are loaded into the boat 217 (wafer charge). (Step S201).

  Thereafter, the vacuum pump 246 is started. Further, the furnace port shutter 147 (see FIG. 1) is opened. The boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and loaded into the processing chamber 201 (boat loading) (step S202). In this state, the seal cap 219 seals the lower end of the reaction tube 203 via the O-ring 220. Thereafter, the boat 217 is rotated by the boat driving mechanism 267 to rotate the wafer 200.

  Thereafter, the APC valve 243 is opened, and the vacuum pump 246 is evacuated so that the processing chamber 201 has a desired pressure (degree of vacuum). When the temperature of the wafer 200 reaches 100 ° C. and the temperature is stabilized (step S203). ), The next steps are sequentially executed while the temperature in the processing chamber 201 is kept at 100 ° C.

  At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the opening degree of the APC valve 244 is feedback-controlled based on the measured pressure (pressure adjustment). Further, the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. At this time, the power supply from the heating power supply 250 to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature (temperature adjustment).

Next, a silicon oxide film forming step for forming silicon oxide films 706 (see FIG. 7C) and 723 (see FIG. 8B) by supplying BTBAS gas and O ₂ gas into the processing chamber 201 is performed. In the silicon oxide film forming step, the following four steps (S204 to S207) are sequentially repeated. In this embodiment, a silicon oxide film is formed using an ALD method.

(BTBAS supply: step S204)
In step S <b> 204, BTBAS is supplied into the processing chamber 201 from the gas supply pipe 310 and the nozzle 410 of the gas supply system 301. The valve 313 is closed and the valves 314 and 612 are opened. BTBAS is a liquid at room temperature, and the liquid BTBAS is adjusted in flow rate by the liquid mass flow controller 312, supplied to the vaporizer 315, and vaporized by the vaporizer 315. Before supplying BTBAS to the processing chamber 201, the valve 313 is closed, the valve 612 is opened, and BTBAS is allowed to flow through the vent line 610 through the valve 612.

When supplying BTBAS to the processing chamber 201, the valve 612 is closed, the valve 313 is opened, BTBAS is supplied to the gas supply pipe 310 downstream of the valve 313, and the valve 513 is opened, so that the carrier gas ( N ₂ ) is supplied from the carrier gas supply pipe 510. The flow rate of the carrier gas (N ₂ ) is adjusted by the mass flow controller 512. BTBAS is mixed and mixed with the carrier gas (N ₂ ) on the downstream side of the valve 313, and is exhausted from the exhaust pipe 231 while being supplied to the processing chamber 201 through the gas supply hole 411 of the nozzle 410. At this time, the APC valve 243 is appropriately adjusted to maintain the pressure in the processing chamber 201 in the range of 50 to 900 Pa, for example, 300 Pa. The supply amount of BTBAS controlled by the liquid mass flow controller 312 is in the range of 0.05 to 3.00 g / min, for example, 1.00 g / min. The time for exposing the wafer 200 to BTBAS ranges from 2 to 6 seconds, for example, 3 seconds. Further, the heating power supply 250 that supplies power to the heater 207 is controlled to maintain the inside of the processing chamber 201 at a temperature of 200 ° C. or lower, more preferably 100 ° C. or lower, for example, 100 ° C. deep.

At this time, the gas flowing into the processing chamber 201 is only BTBAS and N ₂ which is an inert gas, and there is no O ₂ . Therefore, BTBAS does not cause a gas phase reaction, and reacts with the surface of the wafer 200 and the base film (chemical adsorption) to form an adsorption layer or Si layer (hereinafter referred to as Si-containing layer) of the raw material (BTBAS). . The BTBAS chemical adsorption layer includes a continuous adsorption layer of BTBAS molecules and a discontinuous chemical adsorption layer. The Si layer includes a continuous layer composed of Si and a Si thin film formed by overlapping these layers. In addition, the continuous layer comprised by Si may be called Si thin film.

At the same time, when the valve 523 is opened from the carrier gas supply pipe 520 connected in the middle of the gas supply pipe 320 and N ₂ (inert gas) flows, the nozzle 420 on the O ₂ side, the buffer chamber 423 and the gas supply pipe 320 are supplied. BTBAS can be prevented from wrapping around. Similarly, when the valve 533 is opened from the carrier gas supply pipe 530 connected to the gas supply pipe 330 at the same time and N ₂ (inert gas) flows, the O ₂ side nozzle 430, the buffer chamber 433, and the gas supply are supplied. It is possible to prevent the BTBAS from entering the tube 330. Note that the flow rate of N ₂ (inert gas) controlled by the mass flow controllers 522 and 532 may be small in order to prevent BTBAS from wrapping around.

(Residual gas removal: Step S205)
In step S205, residual gas such as residual BTBAS is removed from the processing chamber 201. The valve 313 of the gas supply pipe 310 is closed to stop the supply of BTBAS to the processing chamber 201, and the valve 612 is opened to allow BTBAS to flow to the vent line 610. At this time, the APC valve 243 of the exhaust pipe 231 is fully opened, the inside of the processing chamber 201 is exhausted to 20 Pa or less by the vacuum pump 246, and residual gas such as residual BTBAS remaining in the processing chamber 201 is removed from the processing chamber 201. To do. At this time, when an inert gas such as N ₂ is supplied from the gas supply pipe 310 serving as the BTBAS supply line and further from the gas supply pipes 320 and 330 into the processing chamber 201, the residual gas such as residual BTBAS is further removed. The effect to do increases.

(Activated O ₂ supply: Step S206)
In step S206, O ₂ is supplied from the gas supply pipe 320 of the gas supply system 302 into the buffer chamber 423 through the gas supply hole 421 of the nozzle 420, and O ₂ is supplied from the gas supply pipe 330 of the gas supply system 303 to the nozzle 430. The gas is supplied into the buffer chamber 433 through the gas supply hole 431. At this time, by applying high-frequency power from the high-frequency power source 270 via the matching unit 271 between the rod-shaped electrode 471 and the rod-shaped electrode 472, the O ₂ gas supplied into the buffer chamber 423 is plasma-excited and gas is used as an active species. The gas is exhausted from the gas exhaust pipe 231 while being supplied into the processing chamber 201 from the supply hole 425. Further, by applying high frequency power from the high frequency power source 270 via the matching unit 271 between the rod-shaped electrode 481 and the rod-shaped electrode 482, the O ₂ gas supplied into the buffer chamber 433 is plasma-excited to supply gas as an active species. The gas is exhausted from the gas exhaust pipe 231 while being supplied into the processing chamber 201 from the hole 435.

The flow rate of O ₂ is adjusted by the mass flow controller 322 and supplied into the buffer chamber 423 from the gas supply pipe 320, and the flow rate of the O ₂ is adjusted by the mass flow controller 332 and supplied from the gas supply pipe 330 to the buffer chamber 433. Before supplying O ₂ to the buffer chamber 423, the valve 323 is closed, the valve 622 is opened, and the valve 622 is allowed to flow to the vent line 620. Before being supplied to the buffer chamber 433, the valve 333 is closed. Then, the valve 632 is opened and allowed to flow through the valve 632 to the vent line 630. When supplying O ₂ to the buffer chamber 423, the valve 622 is closed, the valve 323 is opened, O ₂ is supplied to the gas supply pipe 320 downstream of the valve 323, and the valve 523 is opened to open the carrier. Gas (N ₂ ) is supplied from the carrier gas supply pipe 520. The flow rate of the carrier gas (N ₂ ) is adjusted by the mass flow controller 522. O ₂ is mixed with and mixed with the carrier gas (N ₂ ) on the downstream side of the valve 323 and supplied to the buffer chamber 423 through the nozzle 420. When supplying O ₂ to the buffer chamber 433, the valve 632 is closed and the valve 333 is opened, and O ₂ is supplied to the gas supply pipe 330 downstream of the valve 333, and the valve 533 is opened to open the carrier. Gas (N ₂ ) is supplied from the carrier gas supply pipe 530. The flow rate of the carrier gas (N ₂ ) is adjusted by the mass flow controller 532. O ₂ is mixed and mixed with the carrier gas (N ₂ ) on the downstream side of the valve 333 and supplied to the buffer chamber 433 through the nozzle 430.

When flowing O ₂ gas as active species by plasma excitation, the APC valve 243 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, a pressure within a range of 50 to 900 Pa, for example, 500 Pa. . The supply flow rate of the O ₂ gas controlled by the mass flow controller 322 is a flow rate in the range of 2000 to 9000 sccm, for example, and is set to 6000 sccm, for example. The supply flow rate of O ₂ gas controlled by the mass flow controller 332 is a flow rate in the range of 2000 to 9000 sccm, for example, and is set to 6000 sccm, for example. The time during which the wafer 200 is exposed to the active species obtained by exciting the O ₂ gas with plasma, that is, the gas supply time is, for example, within a range of 3 to 20 seconds, for example, 9 seconds. The high-frequency power applied between the high-frequency power source 270 and the rod-shaped electrode 471 and the rod-shaped electrode 472 is, for example, a power in the range of 20 to 600 W and is set to 200 W, for example. The high frequency power applied between the rod-shaped electrodes 482 is, for example, within a range of 20 to 600 W, and is set to be 200 W, for example. Further, the heating power supply 250 that supplies power to the heater 207 is controlled to maintain the inside of the processing chamber 201 at a temperature of 200 ° C. or lower, more preferably 100 ° C. or lower, for example, 100 ° C. deep. If the O ₂ gas is left as it is, the reaction temperature is high, and it is difficult to react at the wafer temperature and the pressure in the processing chamber as described above. It becomes possible to make it the low temperature range set like. However, since it takes time to change the temperature, it is preferable that the temperature be the same as the temperature at which the BTNAS gas is supplied.

At this time, the gas flowing in the processing chamber 201 is an activated species (O ₂ plasma) obtained by plasma-exciting O ₂ gas, and no BTBAS gas is flowing in the processing chamber 201. Therefore, O ₂ gas does not cause a gas phase reaction became active species, or activated O ₂ gas, the silicon-containing layer as a first layer formed on the wafer 200 on at step S204 React with. As a result, the silicon-containing layer is oxidized and modified into a second layer containing silicon (first element) and oxygen (second element), that is, a silicon oxide layer (SiO layer).

At the same time, when N ₂ (inert gas) is flowed from the carrier gas supply pipe 510 connected to the middle of the gas supply pipe 310 to flow N ₂ (inert gas), O ₂ circulates into the nozzle 410 and the gas supply pipe 310 on the BTBAS side. Can be prevented. Note that the flow rate of N ₂ (inert gas) controlled by the mass flow controller 512 may be small in order to prevent O ₂ from wrapping around.

(Residual gas removal: Step S207)
In step S < _b > 207, residual gas such as unreacted or residual O ₂ after contributing to oxidation is removed from the processing chamber 201. The valve 323 of the gas supply pipe 320 is closed to stop the supply of O ₂ to the processing chamber 201, the valve 622 is opened to flow O ₂ to the vent line 620, and the valve 333 of the gas supply pipe 330 is closed to close the processing chamber 201. stopping the supply of _{O 2} to flow the _{O 2} to the vent line 630 by opening the valve 632. At this time, the APC valve 243 of the exhaust pipe 231 is fully opened and the inside of the processing chamber 201 is evacuated to 20 Pa or less by the vacuum pump 246, and residual gas such as residual O ₂ remaining in the processing chamber 201 is discharged from the processing chamber 201. Exclude. At this time, when an inert gas such as N ₂ is supplied from the gas supply pipes 320 and 330 which are O ₂ supply lines and further from the gas supply pipe 310 into the processing chamber 201, the residual gas such as residual O _{2 is} further obtained. The effect of eliminating is increased.

  The above steps S204 to S207 are set as one cycle, and are performed at least once (step S208), whereby a silicon oxide film 706 (see FIG. 7C) having a predetermined film thickness and a silicon oxide film 723 (see FIG. 7C) are formed on the wafer 200 using the ALD method. 8B) is formed.

  The above-described steps S204 to S207 are set as one cycle, and this cycle is performed at least once. As a first resist protective film on the first resist pattern 705 and the hard mask 702, silicon having a predetermined thickness (first A silicon oxide film 706 containing (element) and oxygen (second element) is formed (see FIG. 7C), and a silicon oxide film 723 is formed over the first resist pattern 722 (see FIG. 8B).

When a film formation process for forming the silicon oxide film 706 or the silicon oxide film 723 having a predetermined thickness is performed, the inside of the processing chamber 201 is inactivated by supplying an inert gas such as N ₂ while exhausting the processing chamber 201. Purge with active gas (gas purge: step S210). The gas purge is performed by removing the residual gas, closing the APC valve 243 and opening the valves 513, 523, and 533, and supplying the inert gas such as N ₂ into the processing chamber 201, and then the valves 513, It is preferable to close 523 and 533 to stop supplying the inert gas such as N ₂ into the processing chamber 201 and to repeatedly perform evacuation in the processing chamber 201 by opening the APC valve 243.

Thereafter, the boat rotation mechanism 267 is stopped and the rotation of the boat 217 is stopped. Thereafter, the valves 513, 523, and 533 are opened to replace the atmosphere in the processing chamber 201 with an inert gas such as N ₂ (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (atmospheric pressure). Return: Step S212). Thereafter, the boat cap 115 lowers the seal cap 219 to open the lower end of the reaction tube 203, and the processed wafer 200 is unloaded from the lower end of the reaction tube 203 to the outside of the processing chamber 201 while being supported by the boat 217. (Boat unloading: Step S214). Thereafter, the lower end of the reaction tube 203 is closed by the furnace port shutter 147. Thereafter, the vacuum pump 246 is stopped. Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge: step S216). This completes one film formation process (batch process).

Next, a modification of the present embodiment will be described with reference to FIG.
In the first embodiment, the first plasma generation structure 429 mainly composed of the rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451, the electrode protection tube 452, the buffer chamber 423, and the gas supply hole 425, The second plasma generation structure 439 mainly composed of the rod-shaped electrode 481, the rod-shaped electrode 482, the electrode protection tube 461, the electrode protection tube 462, the buffer chamber 433, and the gas supply hole 435 is the center of the wafer 200 (reaction tube 203 is provided symmetrically with respect to a line passing through the center (203), and the exhaust port 230 is also provided on a line passing through the center of the wafer 200 (center of the reaction tube 203). The gas supply hole 411 of the nozzle 410 is provided. Are provided on a line passing through the center of the wafer 200 (center of the reaction tube 203), and the first plasma generating structure 429 and the second plasma generating structure are provided. Although 439 is provided in the vicinity of the exhaust port 230, in the present modification, the first plasma generation structure 429 and the second plasma generation structure 439 are provided at positions facing each other with the wafer 200 interposed therebetween (180 degrees opposite side). The nozzles 410 are provided symmetrically with respect to the center of the wafer 200 and the center of the reaction tube 203, and the nozzle 410 is provided between the exhaust port 230 and the second plasma generation structure 439. Although different from the first embodiment, the other points are the same.

  Also in this modification, a first plasma source mainly composed of a rod-shaped electrode 471, a rod-shaped electrode 472, an electrode protection tube 451, an electrode protection tube 452, a matching unit 271, and a high-frequency power source 270, and mainly a rod-shaped electrode 481. , A rod-shaped electrode 482, an electrode protection tube 461, an electrode protection tube 462, a matching device 271, and a second plasma source constituted by a high-frequency power source 270. Even if the high frequency power supplied to the source is small, a sufficient amount of plasma can be generated. Therefore, when the wafer 200 is processed using plasma, damage to the wafer 200 and a film to be formed can be reduced, and the processing temperature of the wafer 200 can be lowered.

  The first plasma generation structure 429 mainly composed of the rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451, the electrode protection tube 452, the buffer chamber 423, and the gas supply hole 425, and mainly the rod-shaped electrode 481. The second plasma generation structure 439 configured by the rod-shaped electrode 482, the electrode protection tube 461, the electrode protection tube 462, the buffer chamber 433, and the gas supply hole 435 is opposed to the wafer 200 (180 degrees opposite side). Are provided symmetrically with respect to the center of the wafer 200 and the center of the reaction tube 203, so that the plasma can be more easily supplied from both plasma generation structures to the entire surface of the wafer 200, and more uniformly on the wafer 200. A simple film can be formed.

Next, another modification of the present embodiment will be described with reference to FIG.
In the first embodiment, the gas supply hole 411 of the nozzle 410 is mainly configured by the rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451, the electrode protection tube 452, the buffer chamber 423, and the gas supply hole 425. The first plasma generation structure 429, and the second plasma generation structure 439 mainly composed of the rod-shaped electrode 481, the rod-shaped electrode 482, the electrode protection tube 461, the electrode protection tube 462, the buffer chamber 433, and the gas supply hole 435. Are provided symmetrically with respect to a line passing through the center of the wafer 200 (center of the reaction tube 203), and the gas supply hole 411 of the nozzle 410 is also on a line passing through the center of the wafer 200 (center of the reaction tube 203). However, in the present modification, the first plasma generation structure 429 and the second plasma generation structure 439 are arranged at the center (on the opposite side) of the wafer 200. The gas supply hole 411 of the nozzle 410 is not provided on a line passing through the center of the wafer 200 (center of the reaction tube 203). Although different from the first embodiment, the other points are the same.

  Also in this modification, a first plasma source mainly composed of a rod-shaped electrode 471, a rod-shaped electrode 472, an electrode protection tube 451, an electrode protection tube 452, a matching unit 271, and a high-frequency power source 270, and mainly a rod-shaped electrode 481. , A rod-shaped electrode 482, an electrode protection tube 461, an electrode protection tube 462, a matching device 271, and a second plasma source constituted by a high-frequency power source 270. Even if the high frequency power supplied to the source is small, a sufficient amount of plasma can be generated. Therefore, when the wafer 200 is processed using plasma, damage to the wafer 200 and a film to be formed can be reduced, and the processing temperature of the wafer 200 can be lowered.

  The first plasma generation structure mainly composed of the rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451, the electrode protection tube 452, the buffer chamber 423, and the gas supply hole 425 and mainly the rod-shaped electrode 481, the rod-shaped electrode The second plasma generation structure constituted by the electrode 482, the electrode protection tube 461, the electrode protection tube 462, the buffer chamber 433, and the gas supply hole 435 is relative to a line passing through the center of the wafer 200 (center of the reaction tube 203). Since they are provided in line symmetry, the plasma is easily supplied uniformly from the two plasma generation structures to the entire surface of the wafer 200, and a uniform film can be formed on the wafer 200.

Next, still another modification of the present embodiment will be described with reference to FIG.
In the present modification, the rod-shaped electrode 481 ′, the rod-shaped electrode 482 ′, the electrode protection tube 461 ′, the electrode protection tube 462 ′, the buffer chamber 433 ′, and the gas supply are mainly compared to the other modification shown in FIG. The second plasma generation structure 439 which is configured by the hole 435 ′ and mainly includes the rod-shaped electrode 481, the rod-shaped electrode 482, the electrode protection tube 461, the electrode protection tube 462, the buffer chamber 433, and the gas supply hole 435. The third plasma generation structure 439 ′ is added, and the third plasma generation structure 439 ′ is mainly added to the rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451, the electrode protection tube 452, and the buffer chamber 423. The first plasma generation structure 429 configured by the gas supply holes 425 and the center of the wafer 200 and the center of the reaction tube 203 are provided point-symmetrically.

  In this modification, a first plasma source mainly composed of a rod-shaped electrode 471, a rod-shaped electrode 472, an electrode protection tube 451, an electrode protection tube 452, a matching unit 271, and a high-frequency power source 270, and mainly a rod-shaped electrode 481. , A rod-shaped electrode 482, an electrode protection tube 461, an electrode protection tube 462, a matching device 271, a second plasma source constituted by a high-frequency power source 270, and further mainly a rod-shaped electrode 481 ′, a rod-shaped electrode 482 ′, electrode protection Since a third plasma source composed of a tube 461 ′, an electrode protection tube 462 ′, a matching unit 271 and a high frequency power source 270 is added, the high frequency supplied to each plasma source as compared with the case where there are two plasma sources. Even if the electric power is smaller, a sufficient amount of plasma can be generated. Therefore, when the wafer 200 is processed using plasma, damage to the wafer 200 and a film to be formed can be further reduced, and the processing temperature of the wafer 200 can be further reduced.

(Second Embodiment)
The present embodiment will be described with reference to FIGS. 14 and 15.
In the first embodiment, the electrode protection tube 461 and the electrode protection tube 462 are positioned at a height near the lower portion of the boat support base 218 through the through holes 204 and 205 provided in the reaction tube 203, respectively. The rod-shaped electrodes 481 and 482 are also inserted into the buffer chamber 423 at a height near the lower portion of the boat support 218, and the electrode protection tube 461 and the electrode protection tube 462 are inserted in the buffer chamber 423. The electrode protection tube 451, the electrode protection tube 452, and the rod-shaped electrodes 471 and 472 are fixed by the mounting plate 401, and the electrode protection tube 461, the electrode protection tube 462 and the rod-shaped electrodes 481 and 482 have the same structure. Then, the electrode protection tube 461 and the electrode protection tube 462 are opposite to each other at the height near the upper portion of the boat support base 218 (a portion slightly below the lowest stage on which the product wafer is mounted). Position inserted at the height of the vicinity of the upper portion of the boat support table 218 (slightly below the lowest stage on which the product wafer is mounted) through the through holes 206 and 207 provided in the tube 203, respectively. At a lower position, it is provided outside the reaction tube 203, and rod-shaped electrodes 481 and 482 are also inserted into the buffer chamber 423 at a height near the upper portion of the boat support 218, and near the upper portion of the boat support 218. At a position lower than the height position (a part slightly lower than the lowermost stage on which the product wafer is mounted), the electrode protection tube 461 and the electrode protection tube 462 are provided outside the reaction tube 203. Are respectively provided through the holes 405 and 406 of the mounting plate 401 and fixed by the mounting plate 401. The mounting plate 401 is fixed to the reaction tube 203, the electrode protection tube 451, the electrode Mamorukan 452 and the rod electrode 471, 472 is also the electrode protecting tube 461, but the point is the same structure as the electrode protecting tube 462 and the rod-shaped electrodes 481 and 482 is different from the first embodiment, the other points are the same. In this embodiment, the rod-shaped electrodes 481 and 482 are inserted into the buffer chamber 423 at a height near the upper portion of the boat support base 218, and near the upper portion of the boat support base 218 (the lowest stage on which the product wafer is mounted). Since it is provided outside the reaction tube 203 at a position lower than the height position (lower part), near the upper part of the boat support base 218 (slightly below the lowest stage on which the product wafer is mounted). It is possible to suppress discharge at a position below the position of the (part) height. Note that the curvature of the curved portion 491 is larger than the curvature of the curved portion 490 of the rod-shaped electrode 482 (481, 471, 472).

(Third embodiment)
The present embodiment will be described with reference to FIGS.
In the first embodiment, the thicknesses of the rod-shaped electrodes 471, 472, 481, 482 are the same regardless of the height, but in this embodiment, the rod-shaped electrodes 471, 472, 481, 482 The first point is that the upper part of the support base 218 (the part slightly below the lowermost stage on which the product wafer is mounted) is lower than the upper part of the boat support base 218 from the upper position. However, the other points are the same. By making the rod-shaped electrodes 471, 472, 481, and 482 thinner, the energy becomes weaker and lower than the height position near the upper part of the boat support base 218 (a part slightly below the lowest stage on which the product wafer is mounted). The discharge at the position can be suppressed, and the energy consumption can be suppressed.

(Fourth embodiment)
The present embodiment will be described with reference to FIGS.
In the first embodiment described above, the first plasma generation structure 429 mainly including the rod-shaped electrode 471, the rod-shaped electrode 472, the electrode protection tube 451, the electrode protection tube 452, the buffer chamber 423, and the gas supply hole 425 is used. The second plasma generation structure 439 mainly composed of the rod-shaped electrode 481, the rod-shaped electrode 482, the electrode protection tube 461, the electrode protection tube 462, the buffer chamber 433, and the gas supply hole 435 is provided inside the reaction tube 203. Although provided, the present embodiment is different from the first embodiment in that the plasma generating structure is provided to protrude outside the reaction tube 203, but the other points are the same.

  An elongated rectangular opening 822 is provided on the side wall of the reaction tube 203 from the bottom to the top of the reaction tube, and a plasma forming chamber wall 428 is provided on the outer wall of the reaction tube 203 so as to cover the opening 822. The plasma forming chamber wall 428 has a U-shaped cross section and is formed to be elongated vertically. The plasma forming chamber wall 428 is made of, for example, quartz. A plasma forming chamber 821 is formed in the plasma forming chamber wall 428. The plasma formation chamber 821 communicates with the inside of the reaction tube 203 through the opening 822. The opening 822 is formed to be elongated vertically from the lower side to the upper side of the lowermost part of the plurality of wafers 200 stacked and mounted on the boat 217.

  A nozzle 426 is erected in the inner part of the plasma forming chamber 821 (the part farthest from the center of the reaction tube 203). The lower portion of the nozzle 426 is bent to the inside of the reaction tube 203 at one end, and then protrudes from the tube wall of the reaction tube 203 below the plasma forming chamber wall 428 to the outside of the reaction tube 203, and its end is a gas supply tube. 320 is connected.

  The nozzle 426 is provided so as to rise upward from the lower portion of the inner wall of the reaction tube 203 in the stacking direction of the wafer 200. The upper end of the nozzle 426 is closed. A gas supply hole 427 for supplying gas is provided on the side surface of the nozzle 426 in the stacking direction of the wafer 200 from the lower side to the upper side of the lowermost part of the plurality of wafers 200 stacked and mounted on the boat 217. A plurality are provided along. The gas supply hole 427 opens toward the center of the reaction tube 203. The plurality of gas supply holes 427 have the same opening area and are provided at the same pitch.

  A pair of elongated plasma forming electrodes 473 and 474 are provided on the outer surfaces of both side walls 428a and 428b of the plasma forming chamber wall 428 so as to face each other in the vertical direction. Electrode covers 475 and 476 are provided so as to cover the plasma forming electrodes 473 and 474, respectively. An inert gas purge mechanism is provided in the electrode covers 475 and 476 for filling or purging an inert gas such as nitrogen to keep the oxygen concentration sufficiently low to prevent oxidation of the plasma forming electrodes 473 and 474. .

  The plasma forming electrode 473 is connected to the high frequency power source 270 via the matching unit 271, and the plasma forming electrode 474 is connected to the ground 272 that is a reference potential. The first plasma generation structure 820 is mainly configured by the plasma forming electrodes 473 and 474, the plasma forming chamber wall 428, the plasma forming chamber 821, the opening 822, the nozzle 426, and the gas supply hole 427. The plasma forming electrodes 473 and 474, the matching unit 271 and the high-frequency power source 270 mainly constitute a first plasma source as a plasma generator (plasma generator).

  As a result of the configuration described above, gas is supplied between the plasma forming electrodes 473 and 474 from the gas supply hole 427 of the nozzle 426 provided in the inner part of the plasma forming chamber 821, and between the plasma forming electrodes 473 and 474. Plasma is generated in the plasma generation region and flows while diffusing toward the center of the reaction tube 203 through the opening 822.

  On the side wall of the reaction tube 203, an elongated rectangular opening 832 extending from the bottom to the top of the reaction tube is provided, and a plasma forming chamber wall 438 is provided on the outer wall of the reaction tube 203 so as to cover the opening 832. The plasma forming chamber wall 438 has a U-shaped cross section and is elongated vertically. The plasma forming chamber wall 438 is made of, for example, quartz. A plasma forming chamber 831 is formed in the plasma forming chamber wall 438. The plasma forming chamber 831 communicates with the inside of the reaction tube 203 through the opening 832. The opening 832 is formed to be elongated vertically from the lower side to the upper side of the lowermost part of the plurality of wafers 200 stacked and mounted on the boat 217.

  A nozzle 436 is erected in the inner part of the plasma forming chamber 831 (the part farthest from the center of the reaction tube 203). The lower part of the nozzle 436 is bent to the inside of the reaction tube 203 at one end, and then protrudes from the tube wall of the reaction tube 203 below the plasma forming chamber wall 438 to the outside of the reaction tube 203, and its end is a gas supply tube. 330 is connected.

  The nozzle 436 is provided so as to rise upward from the lower portion of the inner wall of the reaction tube 203 in the stacking direction of the wafer 200. The upper end of the nozzle 436 is closed. A gas supply hole 437 for supplying gas is provided on the side surface of the nozzle 436 in the stacking direction of the wafers 200 from the lower side to the upper side of the lowermost part of the plurality of wafers 200 stacked and mounted on the boat 217. A plurality are provided along. The gas supply hole 437 opens toward the center of the reaction tube 203. The plurality of gas supply holes 437 have the same opening area and are provided at the same pitch.

  A pair of elongated plasma forming electrodes 483 and 484 are provided on the outer surfaces of both side walls 438a and 438b of the plasma forming chamber wall 438 so as to face each other in the vertical direction. Electrode covers 485 and 486 are provided to cover the plasma forming electrodes 483 and 484, respectively. An inert gas purge mechanism is provided in the inside of the electrode covers 485 and 486 for filling or purging with an inert gas such as nitrogen to keep the oxygen concentration sufficiently low to prevent oxidation of the plasma forming electrodes 483 and 484. .

  The plasma forming electrode 483 is connected to the high frequency power source 270 via the matching unit 271, and the plasma forming electrode 484 is connected to the ground 272 that is a reference potential. The second plasma generation structure 830 is mainly configured by the plasma forming electrodes 483 and 484, the plasma forming chamber wall 438, the plasma forming chamber 831, the opening 832, the nozzle 436 and the gas supply hole 437. The plasma forming electrodes 483 and 484, the matching unit 271 and the high frequency power source 270 mainly constitute a second plasma source as a plasma generator (plasma generating unit).

  As a result of the above configuration, gas is supplied between the plasma forming electrodes 483 and 484 from the gas supply hole 437 of the nozzle 436 provided in the inner part of the plasma forming chamber 831, and between the plasma forming electrodes 483 and 484. Plasma is generated in the plasma generation region and flows while diffusing toward the center of the reaction tube 203 through the opening 832.

  Remote plasma is also generated by the plasma generation structures 820 and 830 having the above-described configuration. That is, radicals generated in the plasma generation structures 820 and 830 are not deactivated until they reach the entire surface of the wafer 200 in the processing chamber 201, and ions generated in the plasma generation structures 820 and 830 are applied to the wafer 200 in the processing chamber. Not reachable to do damage.

  When the plasma generation structures 820 and 830 are provided to protrude outside the reaction tube 203 as in the present embodiment, the buffer chambers 423 and 433 are provided inside the reaction tube 203 as in the first embodiment. Compared to the case, the distance between the outer periphery of the wafer 200 and the inner peripheral surface of the reaction tube 203 can be made closer.

  In the present embodiment, the first plasma source mainly composed of the plasma forming electrodes 473 and 474, the matching unit 271 and the high frequency power source 270, and mainly the plasma forming electrodes 483 and 484, the matching unit 271 and the high frequency power source. Since the second plasma source configured by 270 is provided, a sufficient amount of plasma can be generated even when the high-frequency power supplied to each plasma source is small as compared with the case of one plasma source. . Therefore, when the wafer 200 is processed using plasma, damage to the wafer 200 and a film to be formed can be reduced, and the processing temperature of the wafer 200 can be lowered.

  Further, the first plasma generation structure 820 mainly composed of the plasma forming electrodes 473 and 474, the plasma forming chamber wall 428, the plasma forming chamber 821, the opening 822, the nozzle 426 and the gas supply hole 427, and mainly the plasma The second plasma generation structure 830 including the formation electrodes 483 and 484, the plasma formation chamber wall 438, the plasma formation chamber 831, the opening 832, the nozzle 436 and the gas supply hole 437 is formed at the center of the wafer 200 (the center of the reaction tube 203 ) Is provided symmetrically with respect to the line passing through (), it becomes easy to supply plasma uniformly from the two plasma generation structures to the entire surface of the wafer 200, and a uniform film can be formed on the wafer 200.

  Further, since the exhaust port 230 is also provided on a line passing through the center of the wafer 200 (the center of the reaction tube 203), the plasma is easily supplied uniformly over the entire surface of the wafer 200, and a uniform film is formed on the wafer 200. Can be formed. Further, since the gas supply hole 411 of the nozzle 410 is also provided on a line passing through the center of the wafer 200 (the center of the reaction tube 203), the source gas is easily supplied uniformly over the entire surface of the wafer 200. A more uniform film on 200 can be formed.

(Fifth embodiment)
The present embodiment will be described with reference to FIGS.
In the above embodiment, the O ₂ gas is supplied to the buffer chambers 423, 433, and 433 ′ and the plasma formation chambers 821 and 831 to generate oxygen plasma. However, the buffer chamber and the plasma formation chamber are used. As long as it has a structure that generates plasma, there is no limitation on the film type and gas type. For example, when a silicon nitride film is formed using DCS (dichlorosilane: SiH ₂ Cl ₂ ) and NH ₃ (ammonia) However, the present embodiment relates to such a case.

In another modification of the first embodiment described with reference to FIGS. 2 and 12, since liquid BTBAS is used in the gas supply system 301, the liquid mass flow controller 312 and the vaporizer 315 are used. Further, although O ₂ is supplied from the gas supply systems 302 and 303, in this embodiment, since a gaseous DCS is used, a mass flow controller is used instead of the liquid mass flow controller 312 and the vaporizer 315 of the gas supply system 301. The point that the gas supply system 304 having the gas supply pipe 340 using 316 is used and NH ₃ is supplied from the gas supply systems 302 and 303 is different from the other modified example of the first embodiment. The point is the same.

  As a comparative example, as shown in FIG. 22, a first plasma generation structure 429 configured by a rod-shaped electrode 471, a rod-shaped electrode 472, an electrode protection tube 451, an electrode protection tube 452, a buffer chamber 423, and a gas supply hole 425 is provided. The substrate processing apparatus 101 having only the gas supply system 303 having only the gas supply system 302 having the gas supply pipe 320 and the gas supply system 320 having the gas supply pipe 340 is used.

In this comparative example, an amorphous silicon nitride film (hereinafter abbreviated as SiN) was formed by ALD using DCS (dichlorosilane) and NH ₃ (ammonia) plasma at a substrate temperature of about 650 ° C. The formation of SiN on the wafer 200 is performed by repeating the DCS supply process, the DCS exhaust process, the NH ₃ plasma supply process, and the NH ₃ exhaust process a plurality of times. By repeating these four steps, a SiN film having a predetermined film thickness can be deposited on the wafer 200. In the ALD method, the film thickness can be controlled by the number of cycle processes.

  However, the ALD method using plasma as described above has a drawback that particles are likely to be generated compared to a method using no plasma. This problem is considered to be contamination of the separated foreign matter due to the occurrence of microcracks in the accumulated film deposited on the substrate other than the wafer 200 that is the substrate to be processed. Furthermore, this is also an area-related particle problem that occurs prominently when the continuously accumulated film thickness increases. Further, when the high frequency power is increased, the number of particles increases and gets worse. This particle generation result is considered to be part of the work performed by the high-frequency power. As the miniaturization progresses in the manufacture of semiconductor devices, the temperature of the wafer 200 tends to decrease, and it is necessary to increase the high-frequency power to replenish the insufficient energy, so that more particles are generated.

  In this embodiment mode, a first plasma generation structure 429 mainly including a rod-shaped electrode 471, a rod-shaped electrode 472, an electrode protection tube 451, an electrode protection tube 452, a buffer chamber 423, and a gas supply hole 425, , A rod-shaped electrode 481, a rod-shaped electrode 482, an electrode protection tube 461, an electrode protection tube 462, a buffer chamber 433, and a second plasma generation structure 439 composed of a gas supply hole 435. A first plasma source including an electrode 472, an electrode protection tube 451, an electrode protection tube 452, a matching unit 271, and a high-frequency power source 270, mainly a rod-shaped electrode 481, a rod-shaped electrode 482, an electrode protection tube 461, and an electrode protection tube 462, a matching unit 271, and a second plasma source composed of a high-frequency power source 270. As compared with a case Ma source is one, even with a small high-frequency power supplied to each plasma source, it is possible to generate a sufficient amount of plasma. Therefore, when the wafer 200 is processed using plasma, damage to the wafer 200 and a film to be formed can be reduced, and the processing temperature of the wafer 200 can be lowered. Moreover, generation | occurrence | production of the above-mentioned Area property particle can be suppressed.

  The substrate processing apparatus of the present embodiment shown in FIG. 21 and the substrate processing apparatus of the comparative example shown in FIG. 22 are used, a 300 mm wafer is used as the wafer 200, the temperature of the wafer 200 is 350 ° C., and the configuration shown in FIG. The amount of generated particles was compared under film conditions. This is a result when the SiN cumulative film thickness of the reaction tube 203 is 1.2 μm to 1.3 μm. Note that the value of the X axis of the high frequency power in FIG. 23 is described in the column of the X axis of the high frequency power in FIG. FIG. 24 is a table showing the relationship between the high-frequency power and the amount of generated particles having a size of 0.08 μm or more, and FIG. 25 is a graph of the table of FIG.

  As can be seen from this result, even with the same high frequency power, the amount of generated particles is smaller when the high frequency power is distributedly supplied as in this embodiment. Further, it goes without saying that the effect is greater when three distributions are made as shown in FIG.

  Since most ALD film forming apparatuses are operated by repeating the film forming process and the gas cleaning process, the amount of generated particles can be suppressed according to the present embodiment, so that the gas cleaning cycle is extended. be able to.

  In each of the above embodiments, the case where the ALD method is used has been described as an example. However, even when the CVD method is used, by providing a plurality of plasma sources, high-frequency power can be distributed, and one plasma source is provided. Compared to the case, a sufficient amount of plasma can be generated even if the high frequency power supplied to each plasma source is small. Therefore, when the wafer 200 is processed using plasma, damage to the wafer 200 and a film to be formed can be reduced, and the processing temperature of the wafer 200 can be lowered. Further, the generation of particles can be suppressed.

In the above embodiment, N ₂ (nitrogen) is used as the carrier gas, but He (helium), Ne (neon), Ar (argon), or the like may be used instead of nitrogen.

  In the above embodiment, the vaporizer 315 is used to vaporize the liquid raw material, but a bubbler may be used instead of the vaporizer.

(Preferred embodiment of the present invention)
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
According to a preferred aspect of the present invention,
A processing chamber for processing the substrate;
A plurality of buffer chambers that are partitioned from the processing chamber and each have a gas supply port that opens to the processing chamber;
A first processing gas supply system capable of supplying a first processing gas to each of the plurality of buffer chambers;
A power supply that outputs high-frequency power;
An electrode for plasma generation that activates the first processing gas inside the buffer chamber by applying high-frequency power from the power source;
A second processing gas supply system for supplying a second processing gas to the processing chamber;
An exhaust system for exhausting the processing chamber;
Supplying the first processing gas so as to form a film on the substrate while exposing the substrate to the activated first processing gas and the second processing gas and heating the substrate to 200 ° C. or lower. A control means for controlling the system, the power source, the second processing gas supply system and the exhaust system;
A substrate processing apparatus is provided.

(Appendix 2)
The substrate processing apparatus according to appendix 1, wherein the processing chamber and the buffer chamber are preferably provided inside a reaction tube.

(Appendix 3)
The substrate processing apparatus according to appendix 1 or 2, wherein the electrode is preferably provided in the buffer chamber.

(Appendix 4)
The substrate processing apparatus according to appendix 1 or 2, wherein the electrode is preferably provided outside the buffer chamber.

(Appendix 5)
The substrate processing apparatus according to any one of appendices 1 to 4, preferably, the second processing gas is used without being activated.

(Appendix 6)
The substrate processing apparatus according to appendix 1, wherein the first processing gas is an oxygen-containing gas, the second processing gas is a silicon-containing gas, and the film formed on the substrate is a silicon oxide film. is there.

(Appendix 7)
The substrate processing apparatus according to appendix 6, wherein the first processing gas is preferably oxygen and the second processing gas is BTBAS.

(Appendix 8)
The substrate processing apparatus according to appendix 1, wherein the film is preferably formed while heating the substrate to 100 ° C. or lower.

(Appendix 9)
The substrate processing apparatus according to appendix 1, preferably,
The second processing gas supply system is connected to a nozzle having a gas supply port standing in the processing chamber, and supplies the second processing gas from the gas supply port to the processing chamber via the nozzle. ,
The exhaust system is connected to an exhaust port that opens to the processing chamber;
The gas supply port and the exhaust port of the nozzle are provided at positions facing each other with the substrate interposed therebetween.

(Appendix 10)
The substrate processing apparatus according to appendix 9, preferably, in the plurality of buffer chambers, a distance between a gas supply port of the plurality of buffer chambers and a gas supply port of the nozzle is substantially equal.

(Appendix 11)
According to another preferred aspect of the invention,
Exposing a substrate on which a resist or amorphous carbon pattern is formed to a first processing gas activated by plasma generated in a plurality of buffer chambers when high-frequency power is applied to the electrodes;
Exposing the substrate to a second process gas without being activated by plasma;
By performing the above while heating the substrate to 200 ° C. or lower, a method for manufacturing a semiconductor device is provided in which a silicon oxide film is formed on the substrate.

(Appendix 12)
According to still another preferred aspect of the present invention, there is provided a semiconductor device formed by using the semiconductor device manufacturing method according to attachment 11.

(Appendix 13)
According to still another preferred aspect of the present invention,
Two or more plasma forming buffer chambers provided in the processing chamber;
There is provided a substrate processing apparatus comprising: high-frequency power supply means for distributing and supplying high-frequency power to the two or more plasma forming buffer chambers.

(Appendix 14)
The substrate processing apparatus according to appendix 13, preferably equipped with a high-frequency electrode having a structure in which the electrode thickness in the lower stage of the processing chamber is reduced.

(Appendix 15)
According to still another preferred aspect of the present invention,
Supplying a first raw material containing silicon to a plurality of substrates;
Exhausting the first raw material and its by-product gas for a certain period of time;
Generating ammonia while supplying ammonia to the plasma forming buffer chamber, and supplying ammonia radicals to the plurality of substrates;
And a step of exhausting the residual gas for a certain period of time.

(Appendix 16)
According to still another preferred aspect of the present invention,
Supplying a first raw material containing silicon to a plurality of substrates;
Exhausting the first raw material and its by-product gas for a certain period of time;
Supplying oxygen radicals to the plurality of substrates by generating plasma while supplying oxygen to the plasma forming buffer chamber;
And a step of exhausting the residual gas for a certain period of time.

(Appendix 17)
According to still another preferred aspect of the present invention,
A processing chamber for processing the substrate;
Heating means for heating the substrate;
A plurality of plasma forming chambers each having a gas supply port that is partitioned from the processing chamber and opens to the processing chamber;
A first source gas supply system capable of supplying a first source gas to each of the plurality of plasma forming chambers;
A high frequency power supply that outputs high frequency power;
A plurality of electrodes for generating plasma that respectively excite the first source gas inside the plurality of plasma forming chambers by applying high frequency power from the power source;
A second source gas supply system for supplying a second source gas to the processing chamber;
An exhaust system for exhausting the processing chamber;
The heating means to expose the substrate to the activated first source gas and the second source gas to form a film on the substrate while heating the substrate to 200 ° C. or lower; Control means for controlling the first source gas supply system, the high-frequency power source, the second source gas supply system, and the exhaust system;
A substrate processing apparatus is provided.

(Appendix 18)
According to still another preferred aspect of the present invention,
A processing chamber for processing the substrate;
Heating means for heating the processing chamber;
Temperature detecting means for detecting the temperature in the processing chamber;
A plurality of plasma forming chambers each having a gas supply port that is partitioned from the processing chamber and opens to the processing chamber;
A first source gas supply system capable of supplying a first source gas to each of the plurality of plasma forming chambers, the first flow rate control means for controlling the flow rate of the first source gas; The first source gas supply system comprising: a first valve that controls the supply of the source gas to the plurality of plasma forming chambers;
A high frequency power supply that outputs high frequency power;
A plurality of plasma generating electrodes for exciting the first source gas inside the plurality of plasma forming chambers by applying a high frequency power from the high frequency power source;
A second source gas supply system for supplying a second source gas to the processing chamber, wherein the second source gas supply system controls a flow rate of the second source gas; A second source gas supply system comprising a second valve for controlling supply to the processing chamber;
An exhaust system for exhausting the processing chamber;
Based on the temperature information detected by the temperature detection means, the heating means is controlled to heat the temperature in the processing chamber to 200 ° C. or less, and a predetermined amount of high-frequency power is applied to the plurality of electrodes. Controlling the first flow rate control means and the first valve so that a predetermined amount of the first source gas is supplied to each of the plurality of plasma forming chambers by controlling a high-frequency power source; Control for controlling the second flow rate control means and the second valve so that a predetermined amount of gas is supplied to the processing chamber, and for controlling the exhaust system so that the processing chamber is exhausted with a predetermined exhaust amount. Means,
A substrate processing apparatus is provided.

(Appendix 19)
According to still another preferred aspect of the present invention,
Based on the temperature information detected by the temperature detecting means for detecting the temperature in the processing chamber for processing the substrate, the heating means for heating the processing chamber is controlled to heat the temperature in the processing chamber to 200 ° C. or less,
A first source gas supply system capable of supplying a first source gas to each of a plurality of plasma forming chambers that are partitioned from the process chamber and have gas supply ports that open to the process chamber is controlled by controlling the first source gas supply system. A predetermined amount of each of the source gases is supplied to the plurality of plasma forming chambers,
By controlling a high frequency power source that outputs high frequency power, and applying high frequency power from the high frequency power source, a plurality of plasma generating plasmas that respectively excite the first source gas inside the plurality of plasma forming chambers Apply a predetermined amount of high-frequency power to the electrodes,
Controlling a second source gas supply system for supplying a second source gas to the processing chamber to supply a predetermined amount of the second source gas to the processing chamber;
By controlling an exhaust system for exhausting the processing chamber, exhausting the processing chamber with a predetermined exhaust amount,
Manufacturing a semiconductor device comprising a step of exposing the substrate to an activated first source gas and the second source gas while forming the film on the substrate while heating the substrate to 200 ° C. or lower. A method is provided.

(Appendix 20)
According to still another preferred aspect of the present invention,
Computer
Based on the temperature information detected by the temperature detecting means for detecting the temperature in the processing chamber for processing the substrate, the heating means for heating the processing chamber is controlled to heat the temperature in the processing chamber to 200 ° C. or less,
A first source gas supply system capable of supplying a first source gas to each of a plurality of plasma forming chambers that are partitioned from the process chamber and have gas supply ports that open to the process chamber is controlled by controlling the first source gas supply system. A predetermined amount of each of the source gases is supplied to the plurality of plasma forming chambers,
By controlling a high frequency power source that outputs high frequency power, and applying high frequency power from the high frequency power source, a plurality of plasma generating plasmas that respectively excite the first source gas inside the plurality of plasma forming chambers Apply a predetermined amount of high-frequency power to the electrodes,
Controlling a second source gas supply system for supplying a second source gas to the processing chamber to supply a predetermined amount of the second source gas to the processing chamber;
There is provided a program that functions as a control means for controlling an exhaust system for exhausting the processing chamber so as to exhaust the processing chamber with a predetermined exhaust amount.

(Appendix 21)
According to still another preferred aspect of the present invention, a computer-readable recording medium on which the program of Appendix 20 is recorded is provided.

(Appendix 22)
According to still another preferred aspect of the present invention, there is provided a substrate processing apparatus including the recording medium according to attachment 21.

  While various typical embodiments of the present invention have been described above, the present invention is not limited to these embodiments. Accordingly, the scope of the invention is limited only by the following claims.

101 Substrate processing apparatus 105 Cassette shelf 107 Preliminary cassette shelf 110 Cassette 111 Housing 114 Cassette stage 115 Boat elevator 118 Cassette transport device 118a Cassette elevator 118b Cassette transport mechanism 123 Transfer shelf 125 Wafer transfer mechanism 125a Wafer transfer device 125b Wafer transfer Loading device elevator 125c tweezer 128 arm 134a clean unit 134b clean unit 147 furnace port shutter 200 wafer 201 processing chamber 202 processing furnace 203 reaction tube 204, 205, 206, 207 through-hole 207 heater 210 bottom plate 211 top plate 212 column 217 boat 218 boat Support base 219 Seal cap 220 O-ring 230 Exhaust port 231 Exhaust pipe 232 Exhaust pipe 243 APC valve 245 Pressure sensor 246 Check pump 250 heating power source 263 temperature sensor 265 rotating shaft 267 boat rotating mechanism 270 high-frequency power source 271 matching device 272 ground 280 Controller 281 CPU
282 ROM
283 RAM
284 HDD
285, 293, 296 I / F unit 286 Bus 287 Display driver 288 Display 289 Operation input detection unit 290 Operation input unit 291 Temperature control unit 292 Heater control unit 294 Pressure control unit 295 APC valve control unit 297 Electromagnetic valve 298 Electromagnetic valve group 299 Valve control units 301, 302, 303, 304 Gas supply systems 310, 320, 330, 330 ′, 340 Gas supply pipe 312 Liquid mass flow controller 315 Vaporizers 322, 332, 512, 522, 532 Mass flow controllers 313, 314, 323, 333, 513, 523, 533, 612, 622, 632 Valve 401, 404 Mounting plate 402, 403, 405, 406 Hole 410, 420, 430, 430 ', 426, 436 Nozzle 411, 421, 431, 31 ', 427, 437 Gas supply holes 423, 433, 433' Buffer chambers 424, 434, 434 'Buffer chamber walls 425, 435, 435' Gas supply holes 428, 438 Plasma forming walls 428a, 428b, 438a, 438b Side walls 451 , 452, 461, 462, 461 ′, 462 ′ Electrode protective tube 471, 472, 481, 482, 481 ′, 482 ′ 481a, 482a Rod electrode 473, 474, 483, 484 Electrode 501, 502, 503 Carrier gas supply system (Inert gas supply system)
510, 520, 530 Carrier gas supply pipe 610, 620, 630 Vent line

Claims (3)

A processing chamber for processing the substrate;
A first process gas supply system that has a first gas supply port that opens into the process chamber, and that supplies a first process gas from the first gas supply port to the process chamber;
A first buffer chamber that is partitioned from the processing chamber and has a second gas supply port that opens into the processing chamber;
A second buffer chamber that is partitioned from the processing chamber and has a third gas supply port that opens into the processing chamber;
A second processing gas supply system for supplying a second processing gas to the first buffer chamber and the second buffer chamber, respectively.
A first plasma source for generating a plasma inside the first buffer chamber by supplying a high-frequency power and activating the second processing gas by the plasma inside the first buffer chamber;
A second plasma source for generating plasma inside the second buffer chamber by supplying high-frequency power and activating the second processing gas inside the second buffer chamber by the plasma;
An exhaust system for exhausting the processing chamber from an exhaust port;
A first process for supplying the first processing gas to the substrate in the processing chamber from the first gas supply port and exhausting the substrate from the exhaust port; and the first buffer for the substrate in the processing chamber. The second process gas activated by plasma in the chamber is supplied from the second gas supply port of the first buffer chamber, and the second process gas activated by plasma in the second buffer chamber is supplied. A film is formed on the substrate by performing a predetermined number of cycles including a second process of supplying a processing gas from the third gas supply port of the second buffer chamber and exhausting from the exhaust port. In the second process, compared with the case where the second processing gas activated by plasma in one buffer chamber by supplying high-frequency power to one plasma source is supplied to the substrate, The first process gas supply system, the second process gas supply system, the first plasma source, so as to supply high frequency power to each of the first plasma source and the second plasma source, A controller configured to control the second plasma source and the exhaust system;
Equipped with a,
The third gas supply port is provided on a side opposite to the second gas supply port by 180 degrees across the center of the substrate in the processing chamber, and the first gas supply port is connected to the exhaust port and the exhaust port. A substrate processing apparatus provided between the third gas supply port . A first step of supplying a first processing gas to the substrate in the processing chamber from the first gas supply port and exhausting the substrate from the exhaust port;
A second processing gas activated by plasma in a first buffer chamber having a second gas supply port that is partitioned from the processing chamber and opens into the processing chamber is supplied from the second gas supply port into the processing chamber. The third processing gas is supplied to the substrate and is activated by plasma in a second buffer chamber that is partitioned from the processing chamber and has a third gas supply port that opens into the processing chamber. A second step of supplying to the substrate in the processing chamber from a gas supply port and exhausting from the exhaust port;
Including a step of forming a film on the substrate by performing a predetermined number of cycles including:
The third gas supply port is provided 180 degrees opposite to the second gas supply port across the center of the substrate in the processing chamber, and the first gas supply port includes the exhaust port and the first gas supply port. It is provided between 3 gas supply ports,
In the second step, plasma is generated inside the first buffer chamber by supplying high-frequency power to the first plasma source, and the second processing gas is generated inside the first buffer chamber. The plasma is generated inside the second buffer chamber by being activated by plasma and supplying high frequency power to the second plasma source, and the second processing gas is inside the second buffer chamber. In this case, the second processing gas activated by plasma in one buffer chamber is supplied to the substrate by supplying high-frequency power to one plasma source. A method of manufacturing a semiconductor device that supplies smaller high-frequency power to each of the first plasma source and the second plasma source. A first procedure for supplying a first processing gas to the substrate in the processing chamber from the first gas supply port and exhausting the substrate from the exhaust port;
A second processing gas activated by plasma in a first buffer chamber having a second gas supply port that is partitioned from the processing chamber and opens into the processing chamber is supplied from the second gas supply port into the processing chamber. The third processing gas is supplied to the substrate and is activated by plasma in a second buffer chamber that is partitioned from the processing chamber and has a third gas supply port that opens into the processing chamber. A second procedure of supplying from the gas supply port to the substrate in the processing chamber and exhausting from the exhaust port;
By performing a cycle including a predetermined number of times, the computer is caused to execute a procedure for forming a film on the substrate,
The third gas supply port is provided 180 degrees opposite to the second gas supply port across the center of the substrate in the processing chamber, and the first gas supply port includes the exhaust port and the first gas supply port. It is provided between 3 gas supply ports,
In the second procedure, plasma is generated inside the first buffer chamber by supplying high frequency power to the first plasma source, and the second processing gas is supplied inside the first buffer chamber. The plasma is generated inside the second buffer chamber by being activated by plasma and supplying high frequency power to the second plasma source, and the second processing gas is inside the second buffer chamber. In this case, the second processing gas activated by plasma in one buffer chamber is supplied to the substrate by supplying high-frequency power to one plasma source. A program for supplying a smaller high-frequency power to each of the first plasma source and the second plasma source.