JP5717910B1 - Semiconductor die pickup apparatus and pickup method - Google Patents

Abstract

A semiconductor die is effectively picked up while suppressing the occurrence of damage to the semiconductor die. A stage 20 including a suction surface 22 that sucks a dicing sheet 12, and a first position in which an end surface is higher than the suction surface 22 and a second position lower than the first position are disposed in an opening 23 of the stage 20. A step surface forming mechanism 300 that forms a step surface with respect to the suction surface 22, and a first pressure P1 that is close to vacuum and a second pressure that is close to atmospheric pressure. And an opening pressure switching mechanism 80 for switching between the pressure P2 and when picking up the semiconductor die 15, at least one moving element 30 is changed each time the opening pressure is switched from the first pressure P1 to the second pressure P2. Move from the first position to the second position. [Selection] Figure 1

Description

  The present invention relates to a structure of a pickup device for a semiconductor die used in a bonding apparatus and a pickup method.

  The semiconductor die is manufactured by cutting a wafer having a size of 6 inches or 8 inches into a predetermined size. At the time of cutting, a dicing sheet is attached to the back surface so that the cut semiconductor dies do not fall apart, and the wafer is cut from the front surface side with a dicing saw or the like. At this time, the dicing sheet affixed to the back surface is slightly cut, but is not cut and holds each semiconductor die. Each cut semiconductor die is picked up from the dicing sheet one by one and sent to the next step such as die bonding.

  As a method of picking up the semiconductor die from the dicing sheet, the dicing sheet is adsorbed on the surface of the disk-shaped adsorbing piece, and the semiconductor die is adsorbed to the collet, and the semiconductor die is pushed up by a push-up block arranged at the center of the adsorbing piece. A method of picking up a semiconductor die from a dicing sheet by raising the collet and raising the collet has been proposed (see, for example, FIGS. 9 to 23 of Patent Document 1). When peeling the semiconductor die from the dicing sheet, it is effective to first peel the peripheral part of the semiconductor die and then peel the central part of the semiconductor die, which is described in Patent Document 1. In the prior art, the push-up block is divided into a push-up block that pushes up the peripheral part of the semiconductor die, a push-up in the center of the semiconductor die, and a push-up in the middle, and first the three blocks are raised to a predetermined height. The middle and middle blocks are raised higher than the surrounding blocks, and finally the middle block is raised higher than the middle blocks.

  Also, with the dicing sheet adsorbed on the surface of the disk-shaped ejector cap and the semiconductor die adsorbed on the collet, the collet and the peripheral, intermediate, and central push-up blocks are set at a predetermined height higher than the ejector cap surface. Then, the collet is kept at the same height, and the dicing sheet is peeled off from the semiconductor die by lowering the push-up block to the position below the ejector cap surface in the order of the surrounding push-up block and the intermediate push-up block. There has also been proposed a method (see, for example, Patent Document 2).

  When the dicing sheet is peeled from the semiconductor die by the method described in Patent Documents 1 and 2, it is described in FIGS. 40, 42 and 44 of Patent Document 1, FIGS. 4A to 4D and FIGS. 5A to 5D of Patent Document 2. Thus, before the semiconductor die is peeled off, the semiconductor die may be bent and deformed together with the dicing sheet while being adhered to the dicing sheet. If the dicing sheet peeling operation is continued in a state where the semiconductor die is bent, the semiconductor die may be damaged. Therefore, as shown in FIG. 31 of Patent Document 1, the suction air from the collet The curvature of the semiconductor die is detected by the change in the flow rate, and if the intake air flow rate is detected as described in FIG. 43 of Patent Document 1, it is determined that the semiconductor die is deformed and the push-up block is moved. There has been proposed a method in which the push-up block is lifted again after being lowered.

Japanese Patent No. 4945339 US Patent No. 8092645

  By the way, in recent years, semiconductor dies have become very thin, for example, about 20 μm. On the other hand, since the thickness of the dicing sheet is about 100 μm, the thickness of the dicing sheet is 4 to 5 times the thickness of the semiconductor die. When such a thin semiconductor die is peeled off from the dicing sheet, the deformation of the semiconductor die following the deformation of the dicing sheet is more likely to occur. In the prior art described in Patent Documents 1 and 2, dicing is performed. When picking up the semiconductor die from the sheet, there is a problem that the semiconductor die is often damaged.

  Therefore, an object of the present invention is to effectively pick up a semiconductor die while suppressing the occurrence of damage to the semiconductor die.

  A semiconductor die pick-up device according to the present invention is a semiconductor die pick-up device for picking up a semiconductor die attached to the surface of a dicing sheet, and includes a stage including an adsorption surface for adsorbing the back surface of the dicing sheet, and an adsorption of the stage A plurality of moving elements which are arranged in an opening provided on the surface and move between a first position where the tip surface is higher than the suction surface and a second position which is lower than the first position; A step surface forming mechanism to be formed, and an opening pressure switching mechanism for switching the opening pressure of the opening between a first pressure close to vacuum and a second pressure close to atmospheric pressure. Each time the pressure is switched from the first pressure to the second pressure, at least one moving element is moved from the first position to the second position.

  In the semiconductor die pick-up device of the present invention, the pick-up device includes a suction pressure switching mechanism for switching the suction pressure of the suction surface between a third pressure close to vacuum and a fourth pressure close to atmospheric pressure, and when picking up the semiconductor die, It is also preferable to switch the opening pressure in a state where the adsorption pressure is switched from the fourth pressure to the third pressure.

  In the semiconductor die pick-up device of the present invention, when picking up the semiconductor die, it is preferable that the suction pressure is maintained at the third pressure and the opening pressure is switched.

  In the semiconductor die pick-up apparatus of the present invention, when picking up the semiconductor die, the adsorption pressure is changed after the opening pressure is changed from the second pressure to the first pressure in a state where the adsorption pressure is changed from the fourth pressure to the third pressure. It is also preferable that at least one moving element is moved from the first position to the second position every time the third pressure is switched to the fourth pressure and the opening pressure is switched from the first pressure to the second pressure.

  In the semiconductor die pick-up device of the present invention, there is provided a delamination detecting means for detecting whether or not a part of the semiconductor die facing the front end surface of the moving element moved from the first position to the second position is delaminated from the surface of the dicing sheet. And when the peeling detecting means detects that a part of the semiconductor die is not peeled from the dicing sheet, the opening pressure is changed from the first pressure without moving the moving element from the first position to the second position. It is also preferable to switch the opening pressure from the second pressure to the first pressure again after switching to the second pressure.

  The semiconductor die pick-up device of the present invention includes a collet that adsorbs the semiconductor die, a suction mechanism that is connected to the collet and sucks air from the surface of the collet, and a flow rate sensor that detects a suction air flow rate of the suction mechanism. The peeling detection means determines that peeling has occurred when the number of times the differential signal obtained by differentiating the suction air flow signal detected by the flow sensor exceeds a predetermined threshold range has become an even number, and peeling has occurred when it has become an odd number. It is also preferable to judge that it is not.

  The pick-up device for a semiconductor die according to the present invention includes a sheet displacement detection sensor for detecting a displacement in a contact / separation direction with respect to the suction surface of the dicing sheet between the inner surface of the opening of the stage and the outer peripheral surface of the step surface forming mechanism. If the sheet displacement detected by the sheet displacement detection sensor is less than or equal to a predetermined threshold when the opening pressure is switched from the second pressure to the first pressure after a predetermined time has elapsed after switching from 4 pressure to the third pressure, The pressure is switched from the third pressure to the fourth pressure and the opening pressure is switched from the first pressure to the second pressure. After the adsorption pressure is switched from the fourth pressure to the third pressure again, the opening is opened after a predetermined time has elapsed. It is also preferable to switch the pressure from the second pressure to the first pressure to peel the dicing sheet between the inner surface of the opening of the stage and the outer peripheral surface of the step surface forming mechanism from the semiconductor chip. In addition, the sheet displacement detection sensor may be suitable as a light source that uses light having a wavelength in the range of light transmittance of 0% to 30% with respect to the dicing sheet, or a short wavelength LED of 0 nm to 300 nm. It is also preferable to use a reflection type optical fiber.

  In the semiconductor die pick-up device of the present invention, the step surface forming mechanism includes a columnar moving element disposed at the center, a plurality of annular moving elements nested in the periphery of the columnar moving element, and a stage opening. Each of the annular moving elements is in contact with the slider and moves each annular moving element between the first position and the second position by the movement of the slider. The inclined surface of the annular moving element on the outer peripheral side is different from the inclined surface of the annular moving element on the outer peripheral side when the slider moves, and the tip surface of the annular moving element on the outer peripheral side is annular on the inner peripheral side. It is preferable that the slider is arranged so as to be shifted in the moving direction of the slider so as to move from the first position to the second position before the tip surface of the moving element.

  In the semiconductor die pick-up device of the present invention, the columnar moving element includes an inclined surface that contacts the slider and moves the columnar moving element between the first position and the second position by the movement of the slider. Is shifted in the moving direction of the slider so that when the slider moves, the tip surface of the annular moving element on the inner peripheral side moves from the first position to the second position before the tip surface of the columnar moving element. It is also suitable as being arranged.

  In the semiconductor die pick-up device of the present invention, the step surface forming mechanism includes a slider that moves in the direction along the suction surface in the opening of the stage, and a plurality of plate-like moving elements that are arranged in the moving direction of the slider. Each plate-like moving element is provided with respective inclined surfaces that contact the slider and move each plate-like moving element between the first position and the second position by the movement of the slider. Each inclined surface of the moving element is preferably arranged so as to be shifted in the moving direction of the slider so that each plate-like moving element sequentially moves from the first position to the second position along the moving direction of the slider. .

  The semiconductor die pick-up method of the present invention is a semiconductor die pick-up method for picking up a semiconductor die attached to the surface of a dicing sheet, the stage including an adsorption surface for adsorbing the back surface of the dicing sheet, and the stage adsorption A step surface with respect to the suction surface including a plurality of moving elements that are arranged in an opening provided on the surface and move between a first position where the tip surface is higher than the suction surface and a second position lower than the first position; A step surface forming mechanism to be formed; an opening pressure switching mechanism for switching the opening pressure of the opening between a first pressure close to vacuum and a second pressure close to atmospheric pressure; and a third pressure close to the suction pressure of the suction surface And a suction pressure switching mechanism that switches between the first pressure and the fourth pressure close to atmospheric pressure, and a step of preparing a pickup device for a semiconductor die, and each tip surface of each moving element of the step surface forming mechanism An alignment step of moving the stage in a direction along the suction surface so that the semiconductor die to be picked up is directly above the step surface of the step surface forming mechanism, and the suction pressure is changed from the fourth pressure to the third pressure. A first peeling step in which the dicing sheet between the opening inner surface of the stage and the outer peripheral surface of the step surface forming mechanism is peeled from the semiconductor chip by switching the opening pressure from the second pressure to the first pressure after a predetermined time has elapsed after switching. Each time the opening pressure is switched from the first pressure to the second pressure with the adsorption pressure held at the third pressure, at least one moving element is moved from the first position to the second position, and the tip surface of the moving element And a second peeling step of peeling a part of the semiconductor die opposite to the surface of the dicing sheet. The opening pressure switching mechanism is also suitable for switching the opening pressure between the first pressure and the second pressure a plurality of times before first moving the moving element from the first position to the second position.

  The semiconductor die pick-up method of the present invention is a semiconductor die pick-up method for picking up a semiconductor die attached to the surface of a dicing sheet, the stage including an adsorption surface for adsorbing the back surface of the dicing sheet, and the stage adsorption A step surface with respect to the suction surface including a plurality of moving elements that are arranged in an opening provided on the surface and move between a first position where the tip surface is higher than the suction surface and a second position lower than the first position; A step surface forming mechanism to be formed; an opening pressure switching mechanism for switching the opening pressure of the opening between a first pressure close to vacuum and a second pressure close to atmospheric pressure; and a third pressure close to the suction pressure of the suction surface And a suction pressure switching mechanism that switches between the first pressure and the fourth pressure close to atmospheric pressure, and a step of preparing a pickup device for a semiconductor die, and each tip surface of each moving element of the step surface forming mechanism An alignment step of moving the stage in a direction along the suction surface so that the semiconductor die to be picked up is directly above the step surface of the step surface forming mechanism, and the suction pressure is changed from the fourth pressure to the third pressure. A first peeling step in which the dicing sheet between the opening inner surface of the stage and the outer peripheral surface of the step surface forming mechanism is peeled from the semiconductor chip by switching the opening pressure from the second pressure to the first pressure after a predetermined time has elapsed after switching. Then, after switching the opening pressure from the second pressure to the first pressure in a state where the adsorption pressure is switched from the fourth pressure to the third pressure, the adsorption pressure is switched from the third pressure to the fourth pressure, and the opening pressure is changed from the first pressure. Each time the pressure is switched to the second pressure, at least one moving element is moved from the first position to the second position, and a part of the semiconductor die facing the front end surface of the moving element is peeled off from the surface of the dicing sheet. A third separation step that is characterized by having a. The opening pressure switching mechanism is also suitable for switching the opening pressure between the first pressure and the second pressure a plurality of times before first moving the moving element from the first position to the second position.

  In the semiconductor die pick-up method of the present invention, the semiconductor die pick-up device includes a sheet displacement detection sensor for detecting a displacement in a contact / separation direction with respect to the dicing sheet suction surface between the inner surface of the opening of the stage and the outer peripheral surface of the step surface forming mechanism. The first peeling step is detected by the sheet displacement detection sensor when the opening pressure is switched from the second pressure to the first pressure after a predetermined time has elapsed after the suction pressure is switched from the fourth pressure to the third pressure. If the sheet displacement exceeds a predetermined threshold value, it is determined that the dicing sheet between the inner surface of the opening of the stage and the outer peripheral surface of the step surface forming mechanism is separated from the semiconductor chip, and the sheet detected by the sheet displacement detection sensor When the displacement is below a predetermined threshold, the dicing sheet between the inner surface of the stage opening and the outer peripheral surface of the step surface forming mechanism is a semiconductor chip. A first peeling judgment step for judging that no peeling has occurred, and a dicing sheet between the inner surface of the opening of the stage and the outer peripheral surface of the step surface forming mechanism in the first judgment step is judged not peeled from the semiconductor chip. After the adsorption pressure is switched from the third pressure to the fourth pressure and the opening pressure is switched from the first pressure to the second pressure, the adsorption pressure is switched again from the fourth pressure to the third pressure, and after a predetermined time has elapsed. Including a first retry step of switching the opening pressure from the second pressure to the first pressure and peeling the dicing sheet between the opening inner surface of the stage and the outer peripheral surface of the step surface forming mechanism from the semiconductor chip. It is. Further, the sheet displacement detection sensor may be suitable as a light source that uses light having a wavelength in the range of light transmittance of 0% to 30% with respect to the dicing sheet, and a short wavelength LED of 0 nm to 300 nm as a light source. It is also preferable to use a reflective optical fiber.

In the semiconductor die pick-up method of the present invention, the semiconductor pick-up device includes a collet that adsorbs the semiconductor die, a suction mechanism that is connected to the collet and sucks air from the surface of the collet, and a flow rate that detects a suction air flow rate of the suction mechanism. A sensor,
In the second peeling step, when the number of times that the differential signal obtained by differentiating the suction air flow signal detected by the flow sensor exceeds a predetermined threshold range is an even number, the moving element that has moved from the first position to the second position It is determined that a part of the semiconductor die facing the front end surface has been peeled off from the surface of the dicing sheet, and when the number of times becomes an odd number, it is determined that a part of the semiconductor die has not peeled off from the surface of the dicing sheet. When it is determined that the part of the semiconductor die is not peeled from the surface of the dicing sheet by the 2 peeling judgment step and the second peeling judgment step, the moving element is not moved from the first position to the second position. A second retry step of switching the opening pressure from the first pressure to the second pressure and then switching the opening pressure from the second pressure to the first pressure again to separate a part of the semiconductor die from the surface of the dicing sheet; They comprise also suitable as.

  In the semiconductor die pick-up method of the present invention, the semiconductor pick-up device includes a collet that adsorbs the semiconductor die, a suction mechanism that is connected to the collet and sucks air from the surface of the collet, and a flow rate that detects a suction air flow rate of the suction mechanism. A third separation step, the first position is changed to the second position when the number of times that the differential signal obtained by differentiating the suction air flow signal detected by the flow sensor exceeds a predetermined threshold range is an even number. It is determined that a part of the semiconductor die facing the front end surface of the moving element moved to is peeled off from the surface of the dicing sheet. If the number of times is an odd number, a part of the semiconductor die is not peeled off from the surface of the dicing sheet. When it is determined that a part of the semiconductor die is not peeled from the surface of the dicing sheet by the third peeling judgment step and the third peeling judgment step. In addition, the adsorption pressure is switched from the third pressure to the fourth pressure without moving the moving element from the first position to the second position, and the adsorption pressure is changed to the fourth pressure after the opening pressure is switched from the first pressure to the second pressure. And a third retry step of switching the pressure from the pressure to the third pressure and switching the opening pressure from the second pressure to the first pressure again to separate a part of the semiconductor die from the surface of the dicing sheet. Is preferred.

  The present invention has an effect of effectively picking up a semiconductor die while suppressing the occurrence of damage to the semiconductor die.

It is explanatory drawing which shows the system | strain structure of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is a perspective view which shows the stage of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is a perspective view which shows the moving element of the level | step difference surface formation mechanism of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows the linear cam surface of the slider and moving element of the level | step difference surface formation mechanism of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows the wafer affixed on the dicing sheet. It is explanatory drawing which shows the semiconductor die affixed on the dicing sheet. It is explanatory drawing which shows the structure of a wafer holder. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention. Collet height, intermediate annular moving element position, peripheral annular moving element position, stage adsorption pressure, opening pressure, collet air leak amount during operation of semiconductor die pick-up device in an embodiment of the present invention It is a graph which shows the time change of. It is explanatory drawing which shows operation | movement of the peeling determination process of the pick-up apparatus of the semiconductor die in embodiment of this invention. Collet height, intermediate annular moving element position, peripheral annular moving element position, stage adsorption pressure, opening pressure, collet air during other operations of the semiconductor die pick-up device in the embodiment of the present invention It is a graph which shows the time change of leak amount. The collet height during other operations of the semiconductor die pick-up device in the embodiment of the present invention, the position of the intermediate annular moving element, the position of the peripheral annular moving element, the suction pressure of the stage, the opening pressure, and the collet It is a graph which shows the time change of the amount of air leaks. It is a perspective view which shows the other moving element of the stage of the pick-up apparatus of the semiconductor die in embodiment of this invention, and a level | step difference surface formation mechanism. It is a perspective view which shows the stage of the pick-up apparatus of the semiconductor die in other embodiment of this invention, and the movement element of a level | step difference surface formation mechanism. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. It is explanatory drawing which shows operation | movement of the pick-up apparatus of the semiconductor die in other embodiment of this invention. Collet height, position of first to third plate-shaped moving elements, stage adsorption pressure, opening pressure, and collet air leak amount during operation of a semiconductor die pick-up device in another embodiment of the present invention It is a graph which shows the time change of.

  Hereinafter, a semiconductor die pick-up apparatus according to an embodiment of the present invention will be described with reference to the drawings. As shown in FIG. 1, a semiconductor die pick-up apparatus 500 of this embodiment holds a dicing sheet 12 having a semiconductor die 15 attached to a surface 12a, and moves in a horizontal direction. The stage 20 including the suction surface 22 that is disposed on the lower surface of the dicing sheet 12 and sucks the back surface 12b of the dicing sheet 12, the plurality of moving elements 30 disposed in the opening 23 provided in the suction surface 22 of the stage 20, and the suction A step surface forming mechanism 300 that forms a step surface with respect to the surface 22, a collet 18 that picks up the semiconductor die 15, an opening pressure switching mechanism 80 that switches the pressure of the opening 23 of the stage 20, and an adsorption pressure of the adsorption surface 22 of the stage 20 An adsorption pressure switching mechanism 90 for switching air, a suction mechanism 100 for sucking air from the surface 18a of the collet 18, Empty device 140, wafer holder horizontal drive unit 110 for driving wafer holder 10 in the horizontal direction, stage vertical drive unit 120 for driving stage 20 in the vertical direction, and collet drive for driving collet 18 in the vertical and horizontal directions And a control unit 150 that controls the drive of the semiconductor die pick-up apparatus 500.

  The step surface forming mechanism 300 is housed in the upper base portion 24 of the stage 20 and is driven by a motor 77 disposed in the lower drive portion 25. The step surface forming mechanism 300 is connected to the elliptical cam 75 connected to the shaft 76 of the motor 77, the drive rod 73 connected to the cam follower 74 in contact with the cam 75 and driven in the vertical direction, and the drive rod 73. An L-shaped vertical drive member 70, a plate member 57 connected to the vertical drive member 70 via a spring 58, a piston 56 connected to the upper side of the plate member 57, and an upper surface of the piston 56. The flange 55, the guide rail 54 mounted on the flange 55, and the guide rail 54 is guided by the guide rail 54 to move horizontally in the upper inside 28 of the stage 20 to move the plurality of moving elements 30 in the vertical direction. A slider 51 and an L-shaped link member 60 are provided. The link member 60 is rotatably attached to a pin 59 provided at the plate member 57 at the center of the bent portion, and a pin 63 attached to the lower end is provided on the arm 71 of the vertical drive member 70. The groove 72 is engaged. A U-shaped groove 62 provided on the upper side of the link member 60 is engaged with the pin 53 of the slider 51. Further, the flange 55 can be engaged with the step portion 29 a of the lower inner portion 29 of the stage 20.

  In the step surface forming mechanism 300, when the motor 77 of the drive unit 25 rotates counterclockwise as shown by an arrow a shown in FIG. 1, the cam 75 also rotates counterclockwise as shown by an arrow a and contacts the cam 75. The drive rod 73 to which the cam follower 74 is attached moves upward. As a result, the vertical drive member 70 moves upward to press the flange 55 against the stepped portion 29a, and the arm 71 of the vertical drive member 70 pushes up the pin 63 on the lower side of the link member 60. Since the flange 55 to which the guide rail 54 is attached is pressed against the stepped portion 29a inside the stage 20 and does not move in the vertical direction, the link member 60 is connected to the plate member 57 as shown by an arrow c in FIG. Rotating clockwise around the pin 59, the groove 62 at the tip slides the pin 53 of the slider 51 to the right along the suction surface 22 as indicated by the arrow A shown in FIG. When the slider 51 moves in the direction of the arrow A, the tip surfaces of the plurality of moving elements 30 move downward as indicated by the arrow e shown in FIG. Details of the moving element 30 will be described later.

The opening pressure switching mechanism 80 that switches the pressure of the opening 23 of the stage 20 includes a three-way valve 81 and a drive unit 82 that drives the three-way valve 81 to open and close. The three-way valve 81 has three ports, the first port is connected to the base portion 24 communicating with the opening 23 of the stage 20 by a pipe 83, the second port is connected to the vacuum device 140 by a pipe 84, and a third port. The port is connected to a pipe 85 that is open to the atmosphere. The drive unit 82 communicates the first port and the second port to block the third port, and sets the pressure in the opening 23 to the first pressure P ₁ close to vacuum, or communicates the first port and the third port. The pressure of the opening 23 is switched between the first pressure P ₁ and the second pressure P ₂ by closing the second port and setting the pressure of the opening 23 to the second pressure P ₂ close to atmospheric pressure.

The adsorption pressure switching mechanism 90 that switches the adsorption pressure of the adsorption surface 22 of the stage 20 includes a three-way valve 91 having three ports, and a drive unit 92 that opens and closes the three-way valve 91, as in the opening pressure switching mechanism 80. The first port is connected to the suction hole 27 communicating with the groove 26 of the stage 20 by a pipe 93, the second port is connected to a vacuum device 140 and a pipe 94, and the third port is connected to a pipe 95 opened to the atmosphere. Yes. The drive unit 92 connects the first port and the second port to block the third port, and the pressure of the groove 26 or the suction surface 22 is set to a third pressure P ₃ close to vacuum, or the first port and the third port The pressure of the groove 26 or the suction surface 22 is changed to the third pressure by making the port communicate to block the second port and setting the pressure of the groove 26 or the suction surface 22 to the fourth pressure P ₄ close to the atmospheric pressure. Switch between P ₃ and the fourth pressure P ₄ .

  Similar to the opening pressure switching mechanism 80, the suction mechanism 100 that sucks air from the surface 18a of the collet 18 includes a three-way valve 101 having three ports, and a drive unit 102 that opens and closes the three-way valve 101. Air is sucked from the surface 18a through the suction hole 19 and the surface 18a of the collet 18 is evacuated. A flow rate sensor 106 for detecting the flow rate of air sucked from the surface 18 a of the collet 18 to the vacuum device 140 is attached to the pipe 103 connecting the suction hole 19 of the collet 18 and the three-way valve 101.

  The wafer holder horizontal direction driving unit 110, the stage vertical direction driving unit 120, and the collet driving unit 130, for example, drive the wafer holder 10, the stage 20, and the collet 18 in the horizontal direction or the vertical direction by a motor and gear provided therein. To do. Further, as shown in FIGS. 1 and 4A, the gap d between the inner surface 23 a of the opening 23 of the stage 20 and the outer peripheral surface 33 of the moving element 30 is in the contact / separation direction with respect to the suction surface 22 of the dicing sheet 12. A sheet displacement detection sensor 107 for detecting the displacement is attached. Irradiation light emitted from the light source of the sheet displacement detection sensor 107 does not affect the quality of the dicing sheet, the die attach film existing between the dicing sheet and the die, and the adhesive layer of the die attach film. Light having a high rate, for example, light having a short wavelength of 0 nm to 300 nm, in which the light transmittance of the dicing sheet is 0% to 30% is preferable, more preferably light having a wavelength of 100 nm to 300 nm is preferable, and most preferably having a light transmittance of 200 nm to 300 nm. What uses the reflection type optical fiber which uses LED or blue LED as a light source is good. Moreover, although the thing using a reflection type optical fiber was illustrated in this embodiment, as long as the light with a high reflectance with respect to a dicing sheet can be output, another type of sensor can be used.

  The control unit 150 includes a CPU 151 that performs arithmetic processing, a storage unit 152, and a device / sensor interface 153, and the CPU 151, the storage unit 152, and the device / sensor interface 153 are computers connected by a data bus 154. is there. In the storage unit 152, a control program 155, control data 156, an alignment program 157, a first peeling program 158, a second peeling program 159, and a third peeling program 160 are stored.

  Opening pressure switching mechanism 80, adsorption pressure switching mechanism 90, driving units 82, 92, 102 of three-way valves 81, 91, 101 of suction mechanism 100, motor 77 of step surface forming mechanism 300, wafer holder horizontal driving unit 110, the stage vertical direction drive unit 120, the collet drive unit 130, and the vacuum device 140 are connected to the device / sensor interface 153, and are driven by a command from the control unit 150. The flow sensor 106 and the seat displacement detection sensor 107 are connected to the device / sensor interface 153, and the detection signal is captured by the control unit 150 and processed.

  Next, details of the suction surface 22 of the stage 20 and the moving element 30 will be described with reference to FIGS. As shown in FIG. 2, the stage 20 has a cylindrical shape, and a flat suction surface 22 is formed on the upper surface. A square opening 23 is provided in the center of the suction surface 22, and a moving element 30 as shown in FIGS. 3 and 4 is attached to the opening 23. As shown in FIG. 4A, a gap d is provided between the opening 23 and the outer peripheral surface 33 of the moving element 30. Around the opening 23, a groove 26 is doubled so as to surround the opening 23. Each groove 26 is provided with an adsorption hole 27, and each adsorption hole 27 is connected to an adsorption pressure switching mechanism 90.

As illustrated in FIG. 3A, the moving element 30 includes a columnar moving element 45 disposed in the center and a plurality of annular moving elements 31 and 40-43 disposed around the columnar moving element 45. Yes. As shown in FIG. 3A, the plurality of annular moving elements 31, 40-43 are arranged in a nested manner around the central columnar moving element 45. Next, the configuration of the peripheral annular moving element 31 arranged on the outermost periphery will be described with reference to FIG. The peripheral annular moving element 31 includes a square annular member 33a having a width W ₁ , a depth (length in the longitudinal direction) D ₁ and a thickness T ₁ , and a support plate 333a projecting below two opposing surfaces of the annular member 33a. It has. Both ends in the longitudinal direction of the support plate 333a are guide surfaces 32a and 34a extending vertically in a direction perpendicular to the tip surface 38a of the annular member 33a. As shown in FIG. 4A, the guide surfaces 32 a and 34 a are in contact with the vertical inner surface 28 a of the upper inside 28 of the stage 20 to guide the peripheral annular moving element 31 in the vertical direction. On the lower surface of the support plate 333a, there are formed a linear cam surface 35a that is an inclined surface and horizontal support surfaces 36a and 39a that are connected to the linear cam surface 35a and extend horizontally in the longitudinal direction. As shown in FIG. 4 (b), the horizontal support surface 36a is made by a height H ₂ above the horizontal support surface 39a. As shown in FIGS. 4A and 4B, the straight cam surface 35a and the horizontal support surfaces 36a and 39a are surfaces that move while contacting the vertex 52a of the semi-cylindrical member 52 attached to the upper end of the slider 51. It is. Further, the semi-cylindrical member 52 of the slider 51 is fitted on the guide surface 34a side of the support plate 333a (the end side in the moving direction of the slider 51 indicated by the arrow A in FIGS. 4A and 4B). A key portion 37a for fixing the peripheral annular moving element 31 is provided.

  The intermediate annular movement elements 40-43 arranged between the columnar movement element 45 and the peripheral annular movement element 31 have the same structure as the peripheral annular movement element 31, and the width W of each annular member 33b-33e. The depth (length in the longitudinal direction) D is smaller than the dimension of the annular member on the outer peripheral side by the thickness of the annular member, and each annular member 33a-33e is nested as shown in FIG. 4 (a). Are overlapping. Each support plate 333a-333e is arranged so as to overlap in the width direction as shown in FIG. Therefore, as shown in FIG. 3A, the guide surfaces 34a to 34e are continuously arranged like 34a, 34b, 34c, 34d, and 34e from the outer peripheral side toward the center to form one surface. ing. Although not shown, the same applies to the opposite guide surfaces 32a to 32e.

As shown in FIG. 4A, the linear cam surfaces 35a to 35e provided on the peripheral annular moving element 31 and the intermediate annular moving element 40-43 are linear cam surfaces 35a to 35e toward the central intermediate annular moving element. Are displaced in the moving direction of the slider 51 indicated by the arrow A in FIGS. 4 (a) and 4 (b). That is, as shown in FIG. 4B, the distance from the reference position of the points i _{1 to} i ₅ where the heights of the straight cam surfaces 35a to 35e, which are inclined surfaces, from the horizontal support surfaces 39a to 39e are H _{1. L 1 ~L 5 (L 1>} L 2> L 3> L 4> L 5) is. The points j _{2 to} j ₆ on the horizontal support surfaces 36a to 36e at which the height from the horizontal support surfaces 39a to 39e is H ₂ are distances L _{2 to} L ₆ (L ₂ > L ₃ > from the reference position). L ₄ > L ₅ > L ₆ ). Since the straight cam surfaces 35a to 35e are thus configured, when the slider 51 moves in the direction of the arrow A shown in FIG. 4B, the distal end surface 38a of the peripheral annular moving element 31 on the outer peripheral side is an intermediate annular shape. The moving element 40-43 moves from the first position to the second position before the front end face 38b-38e. Further, the distal end surfaces 38b-38e of the intermediate annular moving elements 40-43 are arranged such that the distal end surface of the intermediate annular moving element on the outer peripheral side is in the second position from the first position before the distal end surface of the annular moving element on the inner peripheral side. Move to.

As shown in FIG. 3A, the columnar moving element 45 includes a width W ₂ , a depth (longitudinal length) D ₂ square columnar member 46, and two support plates 333 f connected to the lower side of the columnar member 46. It has. Both ends in the longitudinal direction of the support plate 333f are guide surfaces 32f and 34f in contact with the inner surface 28a, like the annular moving elements 31 and 40-43. Further, as shown in FIGS. 4A and 4B, the support plate 333f of the columnar moving element 45 is not formed with a linear cam surface which is an inclined surface on the lower surface, and the horizontal support surface 39f is long. It extends in the direction (movement direction of the slider 51).

As shown in FIG. 4A, when the slider 51 is at the initial position, the columnar moving element 45, the peripheral annular moving element 31, and the intermediate annular moving elements 40-43 are half mounted on the upper portion of the slider 51. The vertex 52a (top line) of the cylindrical member 52 is supported by contacting the horizontal support surfaces 39a to 39f, and the tip surfaces 47, 38a-38e of the moving elements 45, 31, 40-43 are The first position protrudes from the suction surface 22 by a height H ₀ and constitutes the same surface (step surface with respect to the suction surface 22).

  The operation of the semiconductor die pickup apparatus 500 configured as described above will be described with reference to FIGS. In the following description, it is assumed that the moving element 30 includes three moving elements, that is, the peripheral annular moving element 31, the intermediate annular moving element 40, and the columnar moving element 45. Here, before describing the pick-up operation of the semiconductor die 15, a process of setting the dicing sheet 12 on which the semiconductor die 15 is attached to the wafer holder 10 will be described.

  As shown in FIG. 5, the wafer 11 has an adhesive dicing sheet 12 attached to the back surface, and the dicing sheet 12 is attached to a metal ring 13. The wafer 11 is handled in such a state that it is attached to the metal ring 13 via the dicing sheet 12 in this way. Then, as shown in FIG. 6, the wafer 11 is cut into a semiconductor die 15 by a dicing saw or the like from the surface side in a cutting process. A notch gap 14 formed during dicing is formed between the semiconductor dies 15. The depth of the cut gap 14 extends from the semiconductor die 15 to a part of the dicing sheet 12, but the dicing sheet 12 is not cut, and each semiconductor die 15 is held by the dicing sheet 12.

  Thus, the semiconductor die 15 to which the dicing sheet 12 and the ring 13 are attached is attached to the wafer holder 10 as shown in FIG. The wafer holder 10 includes an annular expand ring 16 having a flange portion and a ring presser 17 for fixing the ring 13 on the flange of the expand ring 16. The ring retainer 17 is driven in a direction to advance and retract toward the flange of the expand ring 16 by a ring retainer drive unit (not shown). The inner diameter of the expand ring 16 is larger than the diameter of the wafer on which the semiconductor die 15 is disposed, the expand ring 16 has a predetermined thickness, and the flange is outside the expand ring 16 and is separated from the dicing sheet 12. It is attached so as to protrude outward on the end face side in the direction. The outer periphery of the expanding ring 16 on the dicing sheet 12 side has a curved surface configuration so that the dicing sheet 12 can be smoothly stretched when the dicing sheet 12 is attached to the expanding ring 16. As shown in FIG. 7B, the dicing sheet 12 to which the semiconductor die 15 is attached is in a substantially planar state before being set on the expanding ring 16.

  As shown in FIG. 1, when the dicing sheet 12 is set on the expanding ring 16, the dicing sheet 12 is stretched along the curved surface at the top of the expanding ring by a level difference between the upper surface of the expanding ring 16 and the flange surface. The dicing sheet 12 fixed to the surface is subjected to a pulling force from the center of the dicing sheet 12 to the periphery. Moreover, since the dicing sheet 12 is extended by this tensile force, the gap 14 between the semiconductor dies 15 attached on the dicing sheet 12 is widened.

Next, the pickup operation of the semiconductor die 15 will be described. The control unit 150 first executes the alignment program 157 shown in FIG. The controller 150 moves the wafer holder 10 horizontally above the standby position of the stage 20 by the wafer holder horizontal drive unit 110. Then, when the wafer holder 10 moves to a predetermined position above the standby position of the stage 20, the control unit 150 temporarily stops the movement of the wafer holder 10 in the horizontal direction. As mentioned earlier, the distal end surface 47,38a of each mobile element 45,31,40 is initially, 38b has a first position protruding by a height H ₀ from the suction surface 22 of the stage 20 Therefore, the controller 150 causes the stage vertical drive unit 120 to bring the tip surfaces 47, 38a, and 38b of the moving elements 45, 31, and 40 into close contact with the back surface 12b of the dicing sheet 12, and to open the suction surface 22. The stage 20 is raised until a region slightly away from the surface 23 comes into close contact with the back surface 12 b of the dicing sheet 12. When the regions slightly away from the front end surfaces 47, 38a, 38b of the moving elements 45, 31, 40 and the opening 23 of the suction surface 22 are in close contact with the back surface 12b of the dicing sheet 12, the control unit 150 moves up the stage 20. To stop. Then, the control unit 150 again uses the wafer holder horizontal driving unit 110 to directly above the tip surface (step surface) of the moving element 30 where the semiconductor die 15 to be picked up slightly protrudes from the suction surface 22 of the stage 20. Adjust the horizontal position so that

As shown in FIG. 8, since the size of the semiconductor die 15 is smaller than the opening 23 of the stage 20 and larger than the width or depth of the moving element 30, the outer periphery of the semiconductor die 15 is finished when the position adjustment of the stage 20 is completed. The end is between the inner surface 23 a of the opening 23 of the stage 20 and the outer peripheral surface 33 of the moving element 30, that is, directly above the gap d between the inner surface 23 a of the opening 23 and the outer peripheral surface 33 of the moving element 30. . In the initial state, the pressure of the groove 26 or the suction surface 22 of the stage 20 is atmospheric pressure, and the pressure of the opening 23 is also atmospheric pressure. In the initial state, the tip surfaces 47, 38 a, 38 b of the moving elements 45, 31, 40 are in the first position protruding from the suction surface 22 of the stage 20 by the height H _0, so that the tip surfaces 47, 38a, the height of the back surface 12b of the dicing sheet 12 in contact with 38b has a first position protruding by a height H ₀ from the suction surface 22. Further, the back surface 12 b of the dicing sheet 12 slightly floats from the suction surface 22 at the periphery of the opening 23, and is in close contact with the suction surface 22 in a region away from the opening 23. When the horizontal position adjustment is completed, the control unit 150 causes the collet driving unit 130 shown in FIG. 1 to lower the collet 18 onto the semiconductor die 15 to land the surface 18a of the collet 18 on the semiconductor die 15. When the collet 18 lands on the semiconductor die 15, the control unit 150 switches the three-way valve 101 in a direction in which the suction hole 19 of the collet 18 and the vacuum device 140 are communicated by the driving unit 102 of the suction mechanism 100. As a result, the suction hole 19 is evacuated, and the collet 18 sucks and fixes the semiconductor die 15 to the surface 18a (end of the alignment program). At this time, as shown in FIG. 8, the height of the surface 18a of the collet 18 is the height of the tip surfaces 47, 38a, 38b of each moving element 45, 31, 40 (height H ₀ from the suction surface 22). The height Hc is obtained by adding the thickness of the dicing sheet 12 to the thickness of the semiconductor die 15.

Next, the control unit 150 executes the first peeling program 158 shown in FIG. The controller 150 outputs a command to switch the adsorption pressure from the fourth pressure P ₄ close to atmospheric pressure to the third pressure P ₃ close to vacuum at time t ₁ shown in FIG. By this command, the drive unit 92 of the adsorption pressure switching mechanism 90 switches the three-way valve 91 in a direction in which the adsorption hole 27 and the vacuum device 140 are communicated. Then, as shown by the arrow 201 in FIG. 9, air groove 26 is sucked out into the vacuum device 140 through the suction holes 27, the third near vacuum adsorption pressure at time t ₂ as shown in FIG. 20 (d) The pressure becomes P ₃ . Then, the back surface 12b of the dicing sheet 12 at the periphery of the opening 23 is vacuum-sucked to the surface of the suction surface 22 as indicated by an arrow 202 in FIG. The front end surfaces 47, 38a, and 38b of the moving elements 45, 31, and 40 are in a first position that protrudes from the suction surface 22 of the stage 20 by a height H _0, so that the dicing sheet 12 is inclined downward. pulling force F ₁ is applied. This pulling force F ₁ can be broken down into a pulling force F ₂ that pulls the dicing sheet 12 laterally and a pulling force F ₃ that pulls the dicing sheet 12 downward. The lateral tensile force F ₂ generates a shear stress τ between the semiconductor die 15 and the surface 12 a of the dicing sheet 12. Due to the shear stress τ, a deviation occurs between the outer peripheral portion of the semiconductor die 15 or the peripheral portion and the surface 12 a of the dicing sheet 12. This deviation triggers the separation between the dicing sheet 12 and the outer peripheral portion of the semiconductor die 15 or the peripheral portion.

Control unit 150, as shown in FIG. 20 (d), after the adsorption pressure at time t ₂ becomes the third pressure P ₃ near vacuum, and held for a predetermined time, so that shown in FIG. 20 (e) At time t ₃ , a command for switching the opening pressure from the second pressure P ₂ close to atmospheric pressure to the first pressure P ₁ close to vacuum is output. With this command, the drive unit 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 in a direction in which the opening 23 and the vacuum device 140 are communicated. Then, as shown by the arrow 206 in FIG. 10, the air of the opening 23 is sucked into the vacuum apparatus 140, FIG. 20 (e), the first pressure at time t ₄ near an opening pressure in the vacuum P ₁ It becomes. As a result, as indicated by an arrow 203 in FIG. 10, the dicing sheet 12 immediately above the gap d between the inner surface 23 a of the opening 23 and the outer peripheral surface 33 of the moving element 30 is pulled downward. In addition, the peripheral portion of the semiconductor die 15 located immediately above the gap d is pulled by the dicing sheet 12 and bent downward as indicated by an arrow 204. As a result, the peripheral portion of the semiconductor die 15 is separated from the surface 18 a of the collet 18. At the time t _2, when the adsorption pressure becomes the third pressure P ₃ close to vacuum, a gap is generated between the outer peripheral portion of the semiconductor die 15 and the surface 12 a of the dicing sheet 12. Is formed as a trigger for peeling from the surface 12a of the dicing sheet 12, the peripheral portion of the semiconductor die 15 begins to peel from the surface 12a of the dicing sheet 12 while being bent and deformed as indicated by an arrow 204 in FIG. Yes. As indicated by the dotted line in FIG. 20 (e), the driving portion 82 of the opening pressure switching mechanism 80, the first pressure P close to the second pressure P ₂ and the vacuum close to the atmospheric pressure during the period between the time t3 and t6 it is also possible to output a command for switching a plurality of times an opening pressure between _1. Thereby, peeling of the surface 12a of the dicing sheet 12 and the semiconductor die 15 can be further ensured.

As shown in FIG. 10, when the peripheral portion of the semiconductor die 15 is separated from the surface 18a of the collet 18, air flows into the suction hole 19 of the collet 18 in a vacuum as shown by an arrow 205 in FIG. Come on. The flow rate of air that flows in (the amount of air leak) is detected by the flow rate sensor 106. As shown in FIG. 20 (e), as the opening pressure toward from time t ₃ to time t ₄ is lowered from the second pressure P ₂ closer to the atmospheric pressure in the first pressure P ₁ near vacuum, the semiconductor die since 15 comes to bending deformation is pulled downwardly together with the dicing sheet 12, FIG. 20 (f), the air leakage amount coming flowed into the suction hole 19 of the collet 18 from time t ₃ t Increasing toward ₄ .

Controller 150, FIG. 20 (e), FIG. 20 (d), the between time t ₄ of time t _5, the first near the opening 23 and the groove 26 or suction surface 22 of the stage 20 in the vacuum respectively The pressure P ₁ and the third pressure P ₃ are maintained. During this time, as indicated by an arrow 207 in FIG. 11, the peripheral portion of the semiconductor die 15 returns to the surface 18 a of the collet 18 due to the vacuum of the suction hole 19 of the collet 18 and the elasticity of the semiconductor die 15. As the peripheral portion of the semiconductor die 15 toward the surface 18a of the collet 18, as shown at time t ₅ from time t ₄ in FIG. 20 (f), air leakage quantity coming flowed into the suction hole 19 of the collet 18 is reduced At time t ₅ , as shown in FIG. 11, when the semiconductor die 15 is vacuum-sucked on the surface 18 a of the collet 18, the amount of air leakage becomes zero. At this time, the peripheral portion of the semiconductor die 15 is peeled off from the surface 12a of the dicing sheet 12 located immediately above the gap d (initial peeling step). When the peripheral portion of the semiconductor die 15 is initially peeled from the surface 12a of the dicing sheet 12, the dicing sheet 12 positioned immediately above the gap d of the opening 23 is displaced downward. The control unit 150 detects the downward displacement of the dicing sheet 12 (displacement in the contact / separation direction with respect to the suction surface 22) by the sheet displacement detection sensor 107, and if the detected displacement exceeds a predetermined threshold value, the semiconductor It is determined that the peripheral portion of the die 15 is initially peeled from the surface 12a of the dicing sheet 12 located immediately above the gap d. When the detected displacement is equal to or smaller than the predetermined threshold value, it is determined that the peripheral portion of the semiconductor die 15 is not initially peeled from the surface 12a of the dicing sheet 12 positioned immediately above the gap d (first Peeling judgment process). When the control unit 150 determines that the peripheral portion of the semiconductor die 15 is initially peeled, the control unit 150 proceeds to the next peeling step. In addition, when the control unit 150 determines that the peripheral portion of the semiconductor die 15 is not initially peeled, the control unit 150 performs the first retry process.

In the first retry process, the control unit 150 switches the three-way valves 81 and 91 of the opening pressure switching mechanism 80 and the adsorption pressure switching mechanism 90 so that the atmosphere communicates with the opening 23 and the groove 26, so that the opening pressure and the adsorption are switched. After the pressure is set to the second pressure P ₂ and the fourth pressure P ₄ close to atmospheric pressure, the three-way valves 81 and 91 of the opening pressure switching mechanism 80 and the adsorption pressure switching mechanism 90 are again connected to the vacuum device 140, the opening 23, and the groove. 26, the opening pressure and the adsorption pressure are switched from the second pressure P ₂ and the fourth pressure P ₄ close to atmospheric pressure to the first pressure P ₁ and the third pressure P ₃ close to vacuum, respectively. Then, it is determined whether or not the displacement detected by the sheet displacement detection sensor 107 exceeds a predetermined threshold value. If the detected displacement exceeds the predetermined displacement, the first retry process is terminated and the process proceeds to the next peeling process (end of the first peeling program).

Next, the control unit 150 executes the third peeling program 160 shown in FIG. The second peeling program will be described later. As shown in FIG. 20 (e) and FIG. 20 (d), the controller 150 holds the opening pressure and the adsorption pressure at the first pressure P ₁ and the third pressure P ₃ close to vacuum for a predetermined time, At t ₅ , a command for switching the opening pressure and the adsorption pressure from the first pressure P ₁ and the third pressure P ₃ close to vacuum to the second pressure P ₂ and the fourth pressure P ₄ close to atmospheric pressure are output. By this command, the driving unit 82 of the opening pressure switching mechanism 80 and the driving unit 92 of the adsorption pressure switching mechanism 90 cause the three-way valves 81 and 91 to communicate with the pipes 85 and 95 that are open to the atmosphere, the opening 23, and the groove 26. Switch to. Thus, as the arrows 210 and 211 shown in FIG. 12, the air openings 23, so come to flow into the groove 26, FIG. 20 (d), as shown in FIG. 20 (f), the time from time t ₅ Toward t ₆ , the opening pressure and the adsorption pressure increase from the first pressure P ₁ and the third pressure P ₃ close to vacuum to the second pressure P ₂ and the fourth pressure P ₄ close to atmospheric pressure.

When the opening pressure and the adsorption pressure are increased to the second pressure P ₂ and the fourth pressure P ₄ that are close to the atmospheric pressure, the dicing sheet 12 positioned immediately above the gap d that has been pulled downward in a vacuum is indicated by an arrow in FIG. As indicated by 212, it is returned upward by the tensile force applied when it is fixed to the wafer holder 10. Further, the dicing sheet 12 at the periphery of the opening 23 is slightly lifted from the suction surface 22 due to the pulling force.

Controller 150, FIG. 20 (e), as shown in FIG. 20 (d), the opening pressure at time t _6, the second pressure P ₂ closer to the adsorption pressure is atmospheric pressure, when turned to the fourth pressure P _4, As shown in FIG. 20 (c), the height of the front end surface 38a of the peripheral annular moving element 31 is lowered by a height H ₁ from the first position (the initial position where the height from the suction surface 22 is H ₀ ). Outputs the command for position. By this command, the motor 77 of the drive unit 25 shown in FIG. 1 rotates counterclockwise as indicated by an arrow a shown in FIG. As a result, the link member 60 rotates clockwise as indicated by an arrow c shown in FIG. 1, and the slider 51 starts moving toward the right as indicated by an arrow A shown in FIG.

As shown in FIG. 4B, in the initial state, the apex 52a of the semi-cylindrical member 52 attached to the upper portion of the slider 51 is set in the horizontal direction of the peripheral annular moving element 31, the intermediate annular moving element 40, and the columnar moving element 45. The front end surfaces 38a and 38b of the annular members 33a and 33b of the moving elements 31 and 40 and the front end surface 47 of the columnar member 46 of the columnar moving element 45 are in contact with the support surfaces 39a, 39b and 39f. This is a first position (initial position) that is higher than the height H ₀ by 22. Here, when the slider 51 moves to the right from the reference position as indicated by an arrow A shown in FIG. 4B, the vertex 52 a of the semi-cylindrical member 52 is engaged with the linear cam surface 35 a of the peripheral annular moving element 31. When the slider 51 further moves to the right, the entire peripheral annular moving element 31 is lowered downward by the amount that the linear cam surface 35a is raised upward from the horizontal support surface 39a. As shown in FIG. 4B, when the slider 51 moves to the right from the reference position by a distance L ₁ , the vertex 52 a of the slider 51 supports the point i ₁ of the linear cam surface 35 a of the peripheral annular moving element 31. Yes. Since the point i ₁ is above the horizontal support surface 39a by the height H ₁ in FIG. 4B, the peripheral annular moving element 31 as a whole is below the initial first position by the height H _1. As shown by an arrow 214 in FIG. 13, the second end surface 38a of the peripheral annular moving element 31 is also lower by a height H ₁ than the first position (initial position) and slightly lower than the suction surface 22. It moves to a position (a position that is lower than the suction surface 22 by a height (H ₁ −H ₀ )). At this time, since the intermediate annular moving element 41 is supported by the horizontal support surface 39b, the height of the front end surface 38b remains at the first position (initial position) as shown in FIG. Similarly, since the columnar moving element 45 is also supported by the horizontal support surface 39f, the height of the tip surface 47 remains at the first position (initial position). The front end surface 38a and the front end surfaces 38b and 47 are stepped surfaces having steps. Further, each of the front end surfaces 38 a, 38 b, 47 is a step surface with respect to the suction surface 22. When the slider 51 moves to the right by the distance L ₁ from the reference position, the control unit 150 stops the rotation of the motor 77.

Next, the control unit 150 outputs a command to switch the adsorption pressure from the fourth pressure P ₄ close to atmospheric pressure to the third pressure P ₃ close to vacuum at time t ₆ . By this command, the drive unit 92 of the adsorption pressure switching mechanism 90 switches the three-way valve 91 so that the groove 26 and the vacuum device 140 are in communication. Accordingly, as indicated by an arrow 213 in FIG. 13, the air in the groove 26 is sucked toward the vacuum device 140, and the pressure in the groove 26 and the suction pressure on the suction surface 22 are the third pressure P close to vacuum. _The dicing sheet 12 is vacuum-sucked to the suction surface 22. At this time, as shown in FIG. 20 (e), the pressure of the opening 23 is in the second pressure P ₂ close to atmospheric pressure, the back surface 12b and surrounding the dicing sheet 12 is located immediately above the gap d There is a gap between the tip end surface 38 a of the annular moving element 31.

Control unit 150, as shown in FIG. 20 (e), outputs a command for switching to the time t ₇ the opening pressure from the second pressure P ₂ closer to the atmospheric pressure in the first pressure P ₁ near vacuum. By this command, the drive unit 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 so that the opening 23 and the vacuum device 140 communicate with each other. Thus, as shown by arrow 215 in FIG. 14, the air in the opening 23 is sucked into the vacuum apparatus 140, the time t _8, as shown in FIG. 20 (e), the first opening pressure is near vacuum The pressure becomes P ₁ . When the opening pressure decreases from the second pressure close to atmospheric pressure to the first pressure P ₁ close to vacuum, the dicing sheet 12 positioned (opposed) immediately above the front end surface 38a of the peripheral annular moving element 31 is moved to the arrow in FIG. As shown at 216, the back surface 12b is pulled downward so as to contact the front end surface 38a. As a result, as indicated by an arrow 217 in FIG. 14, a part of the semiconductor die 15 positioned immediately above the front end surface 38 a of the semiconductor die 15 is bent downward and is separated from the surface 18 a of the collet 18, and the air is colleted. It flows into the 18 suction holes 19. The amount of air leak flowing into the suction hole 19 is detected by the flow sensor 106 shown in FIG. As shown in FIG. 20F, the air leak amount increases from time t ₇ when the opening pressure decreases to time t ₈ .

At time t ₈ , the controller 150 increases the opening pressure and the adsorption pressure from the first pressure P ₁ and the third pressure P ₃ close to vacuum, respectively, as shown in FIGS. 20 (e) and 20 (d). A command to increase the second pressure P ₂ and the fourth pressure P ₄ close to the atmospheric pressure is output. By this command, the drive unit 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 so that the opening 23 and the piping 85 open to the atmosphere communicate with each other. Further, the drive unit 92 of the adsorption pressure switching mechanism 90 switches the three-way valve 91 so that the groove 26 and the piping 95 opened to the atmosphere communicate. As a result, air flows into the opening 23 and the groove 26 as shown by arrows 220 and 221 in FIG. 15, and the pressure in the opening 23 and the pressure in the groove 26 as shown in FIGS. 20 (e) and 20 (d). Alternatively, the pressure on the adsorption surface 22 increases to a second pressure P ₂ and a fourth pressure P ₄ that are close to atmospheric pressure, respectively. As a result, as indicated by an arrow 223 in FIG. 15, the dicing sheet 12 immediately above the gap d is displaced upward away from the distal end surface 38 a of the peripheral annular moving element 31. Further, the semiconductor die 15 in the region facing the tip surface 38a returns toward the surface 18a of the collet 18 as indicated by the arrow 224 shown in FIG. 15 along with the upward displacement of the dicing sheet 12. When the semiconductor die 15 approaches the surface 18a of the collet 18 begins to decrease air leakage quantity flowing into the suction hole 19 of the collet 18 as between times t ₉ from the time t ₈ in FIG. 20 (f), air leakage amount at time t ₉ in FIG. 20 (f) becomes zero. At this time, the semiconductor die 15 is vacuum-sucked on the surface 18a of the collet 18, and the region of the semiconductor die 15 facing the front end surface 38a is peeled from the surface 12a of the dicing sheet 12 (first third peeling step).

At time t ₉ , the control unit 150 commands to move the front end surface 38b of the intermediate annular moving element 40 from the first position (the position where the height from the suction surface 22 is H ₀ ) to the second position which is lower by the height H _1. Is output. As in the case where the front end surface 38a of the peripheral annular moving element 31 is first moved from the first position to the second position by this command, the motor 77 of the drive unit 25 shown in FIG. It rotates counterclockwise as shown by arrow a. Then, as shown in FIG. 4B, the slider 51 moves rightward to a position at a distance L ₂ from the reference position (moves rightward by a distance (L ₂ −L ₁ )). Then, as shown in FIG. 4B, the apex (top line) 52a of the semi-cylindrical member 52 attached to the slider 51 is a linear cam of the intermediate annular moving element 40 at a point i ₂ shown in FIG. 4B. contact with the surface 35b, in contact with the linear cam surface 35a near the annular mobile elements 31 at point j _2. Therefore, as shown by an arrow 227 in FIG. 16, the tip end surface 38b of the intermediate annular moving element 40 is a second position (suction) that is lower by a height H ₁ than the first position (a position higher by the height H ₀ than the suction surface). Move from the surface 22 to a position lower by H ₁ −H ₀ ). Further, as indicated by an arrow 226 in FIG. 16, the distal end surface 38 a of the peripheral annular moving element 31 that was in the second position is a third position (attraction surface 22) that is lower than the first position (initial position) by a height H _2. To a position lower by H ₂ −H ₀ ). The tip surfaces 38a, 38b, and 47 are stepped surfaces having steps relative to each other and at the same time a stepped surface with respect to the suction surface 22.

The control unit 150 includes, as shown in FIG. 20 (d), outputs a command for switching the suction pressure at time t ₉ the fourth pressure P ₄ close to the atmospheric pressure to a third pressure P ₃ near vacuum, FIG. As shown in FIG. 20 (e), a command for switching the opening pressure from the second pressure P ₂ close to atmospheric pressure to the first pressure P ₁ close to vacuum is output at time t ₁₀ after a predetermined time has elapsed from time t ₉ . By this command, the driving unit 92 of the adsorption pressure switching mechanism 90 and the driving unit 82 of the opening pressure switching mechanism 80 switch the three-way valves 81 and 91 so that the groove 26, the opening 23 and the vacuum device 140 are in communication with each other. Thus, as indicated by an arrow 225,228 in FIG. 17, the air in the air and the opening 23 of the groove 26 is drawn into the vacuum apparatus 140, the opening pressure, the first pressure P near vacuum each time t ₁₁ adsorption pressure ₁ and the third pressure P ₃ . Then, as indicated by arrows 229 and 230 shown in FIG. 17, the dicing sheet 12 has the tip surface 38a of the peripheral annular moving element 31 lowered to the third position and the intermediate annular moving element 40 lowered to the second position. It is pulled toward the distal end surface 38b and displaced downward. Along with this, the region of the semiconductor die 15 facing the front end surfaces 38a and 38b is also bent and deformed downward away from the surface 18a of the collet 18 as indicated by an arrow 231 in FIG. Then, air flows into the suction hole 19 from between the surface 18 a of the collet 18 and the semiconductor die 15 as indicated by an arrow 232 in FIG. Thus, as shown in FIG. 20 (f), between time t ₁₀ the time t _11, the air leakage amount flowing into the suction hole 19 of the collet 18 increases.

Controller 150, FIG. 20 (e), FIG. 20 as shown in (d), the opening pressure at time t _11, respectively atmospheric adsorption pressure first pressure P ₁ near vacuum, respectively, from the third pressure P ₃ A command to switch to the second pressure P ₂ and the fourth pressure P ₄ close to is output. In response to this command, the drive unit 92 of the adsorption pressure switching mechanism 90 and the drive unit 82 of the opening pressure switching mechanism 80 cause the three-way valves 81 and 91 to communicate with the groove 26, the opening 23, and the pipes 85 and 95 that are open to the atmosphere, respectively. Switch as follows. Then, air flows into the opening 23 and the groove 26 as indicated by arrows 241 and 242 in FIG. 18, and the opening pressure and the adsorption pressure are increased, so that the dicing sheet 12 is, as indicated by the arrow 243 shown in FIG. Displaces upward. The direction of displacement on the dicing sheet 12, the semiconductor die 15 by the vacuum suction holes 19 of the collet 18, so approaches the surface 18a of the collet 18, as shown in FIG. 20 (f), the time from time t ₁₁ During t _12, the amount of air leakage flowing into the suction hole 19 decreases and finally becomes zero at time t ₁₂ when the semiconductor die 15 is vacuum-sucked on the surface 18 a of the collet 18. Further, FIG. 20 (e), as shown in FIG. 20 (d), at time t _12, the opening pressure close to the atmospheric respective adsorption pressure, the second pressure P _2, the fourth pressure P _4. In this state, as shown in FIG. 18, the semiconductor die 15 in the region corresponding to the tip surface 47 of the columnar moving element 45 is stuck to the dicing sheet 12, but most of the region of the semiconductor die 15 is removed from the dicing sheet 12. It is in the peeled state (second third peeling step). Thus, the control unit 150 ends the third peeling program 160.

As described above, the controller 150 sets the opening pressure and the adsorption pressure to the first pressure P ₁ close to vacuum and the second pressure close to atmospheric pressure from the third pressure P ₃ , respectively, from time t ₅ to time t ₆ . While switching to the pressure P ₂ and the fourth pressure P ₄ , the front end surface 38a of the peripheral annular moving element 31 is moved from the first position to the second position, and the opening pressure and the adsorption pressure are changed from time t ₈ to time t _9. The first pressure P ₁ close to vacuum and the third pressure P ₃ are switched from the third pressure P ₃ to the second pressure P ₂ and the fourth pressure P ₄ close to atmospheric pressure, respectively, and the front end surface 38b of the intermediate annular moving element 40 is moved from the first position to the first pressure P 1. Every time the opening pressure and the adsorption pressure are switched from the first pressure P ₁ and the third pressure P ₃ close to the vacuum to the second pressure P ₂ and the fourth pressure P ₄ close to the atmospheric pressure so as to move to the second position, The tip surface is sequentially moved from the first position to the inner annular movement element from the first position. To move to a position repeatedly third separation step, will stepwise peeled dicing sheet 12 toward the periphery of the semiconductor die 15 inside.

After finishing the third peeling program, the control unit 150, at time t _12, the key portion 37a of the semi-cylindrical member 52 attached to the slider 51 each moving element, 37b, as fitted to 37f, the slider 51 The position is moved to the rightmost side shown in FIG. By the movement of the slider 51, the intermediate annular moving element 40 is supported on the horizontal support surface 36b by the vertex 52a of the semi-cylindrical member 52, so that the front end surface 38b is as shown by an arrow 246 in FIG. , Descend from the second position to the third position. As shown in FIG. 19, the columnar moving element 45 has no linear cam surface, and the horizontal support surface 36f in the moving direction of the slider 51 is in contact with the horizontal support surface 39f that is in contact with the slider 51 at the initial position. Therefore, the position of the tip surface 47 is not changed by the movement of the slider 51, and remains at the first position which is the initial position. When the semi-cylindrical member 52 of the slider 51 is fitted into the key portions 37a, 37b, 37f, the moving elements 31, 40, 45 are fixed in the vertical direction. Further, the control unit 150 outputs a command to switch the adsorption pressure to the third pressure P ₃ close to vacuum at time t ₁₂ . By this command, the drive unit 92 of the adsorption pressure switching mechanism 90 switches the three-way valve 91 so that the groove 26 and the vacuum device 140 are in communication. Thereby, as indicated by an arrow 245 in FIG. 19, the air in the groove 26 is sucked into the vacuum device 140, the groove 26 is evacuated, and the dicing sheet 12 is vacuum-sucked to the suction surface 22. In the state shown in FIG. 19, the semiconductor die 15 in the region corresponding to the front end surface 47 of the columnar moving element 45 is stuck to the dicing sheet 12, but most of the region of the semiconductor die 15 is peeled from the dicing sheet 12. It has become.

Control unit 150 outputs a command to raise the collet 18 to time t ₁₃ in FIG. 20. By this command, the collet driving unit 130 shown in FIG. 1 drives the motor to raise the collet 18 as indicated by an arrow 247 in FIG. Each moving element 31, 40, 45 is fixed in the vertical direction, and the dicing sheet 12 is vacuum-sucked to the suction surface 22. The semiconductor die 15 is peeled off from the dicing sheet 12 and the semiconductor die 15 is picked up while being adsorbed by the collet 18.

After picking up the semiconductor die 15, the control unit 150, when the time t ₁₄ returns the slider 51 to the initial position, the tip surface 38a of the moving element 31,40,45, 38b, 47 is returned to the first position. Further, the control unit 150 returns the adsorption pressure and the opening pressure to the atmospheric pressure, and ends the pickup operation.

When picking up the semiconductor die 15, the semiconductor die pick-up device 500 according to the embodiment described above has the first pressure P ₁ that is close to vacuum and the second pressure that is close to the atmospheric pressure from the third pressure P ₃ . Each time the pressure P ₂ is switched to the fourth pressure P ₄ , the third peeling step is performed so that the tip surface is sequentially moved from the first position to the second position from the outer annular movement element toward the inner annular movement element. Since the dicing sheet 12 is repeatedly peeled stepwise from the periphery of the semiconductor die 15 to the inside, there is an effect that damage to the semiconductor die during pick-up can be suppressed.

In the above embodiment, the opening pressure, each switching the adsorption pressure first pressure P ₁ near vacuum, the second pressure P ₂ closer to the third pressure P ₃ to the atmospheric pressure, to a fourth pressure P _4, 1 Although the tip surfaces of the two annular moving elements have been described as moving from the first position to the second position, the sliding distance of the slider 51 when switching the pressure is increased, and the tip surfaces of the plurality of annular moving elements are moved to the first position. You may make it move to a 2nd position from a position. Further, in the present embodiment, it has been described that the columnar moving element 45 does not have a straight cam surface and the tip surface 47 does not move from the first position. However, the columnar moving element 45 has a straight cam surface, and the inner peripheral side After the front end surface of the annular moving member moves from the first position to the second position, the front end surface 47 may move from the first position to the second position. In the present embodiment, the second position is described as being a position that is lower than the suction surface 22 by (H ₁ −H ₀ ). However, if the second position is lower than the first position, the second position is the same as the suction surface 22. A surface may be sufficient and a position higher than an adsorption surface may be sufficient.

  In the description of the operation of the present embodiment, the moving element 30 includes three moving elements, the peripheral annular moving element 31, the intermediate annular moving element 40, and the columnar moving element 45, and the third peeling step is performed twice. As described above, the step surface forming mechanism moving element 30 is constituted by the peripheral annular moving element 31, the four intermediate annular moving elements 40-43 and the columnar moving element 45 as shown in FIGS. In this case, since the five tip surfaces 38a to 38e of the peripheral annular moving element 31 and the four intermediate annular moving elements 40-43 are moved from the first position to the second position, the third peeling step is performed five times. Will be done. The number of intermediate annular moving elements is not limited to the above example, but may be two or three, or may be five or more. As the number of intermediate annular moving elements increases, the dicing sheet 12 is gradually peeled off in multiple steps from the periphery of the semiconductor die 15 toward the inside, so that damage to the semiconductor die during pickup can be further suppressed. .

  In the present embodiment, the moving element 30 includes a peripheral annular moving element 31, four intermediate annular moving elements 40-43 and a columnar moving element 45 as shown in FIGS. Although 38a-38e and 47 demonstrated as a flat surface, each front end surface is not a flat surface, For example, it is good also as what provided the some groove | channel.

  For example, as shown in FIG. 24, the moving element 30 is constituted by a peripheral annular moving element 31, two intermediate annular moving elements 40, 41, and a columnar moving element 45, and on the surface of the front end surface 38a of the peripheral annular moving element 31. A plurality of grooves 31 a may be provided, and the plurality of grooves 45 a may be arranged in a lattice pattern on the tip surface 47 of the columnar moving element 45. By configuring in this way, as shown in FIGS. 10 and 11, the opening 23 is close to a vacuum in a state where the front end surfaces 38 a, 38 b, 47 of each moving element 30 are in contact with the back surface 12 b of the dicing sheet 12. When pressure is applied, peeling of the dicing sheet 12 around the semiconductor die 15 can be further promoted, and peeling of the dicing sheet 12 near the center of the semiconductor die 15 can be promoted. There is an effect that the time for picking up 15 can be shortened.

  In the third peeling step described above, the controller 150 performs a third peeling judgment step for judging whether or not the region of the semiconductor die 15 facing the front end surface 38a is peeled from the surface 12a of the dicing sheet 12. When it is executed and it is determined that the region of the semiconductor die 15 facing the tip surface 38a is not peeled from the surface 12a of the dicing sheet 12 in the third peeling determination step, the third retry step is performed. Hereinafter, a 3rd peeling judgment process and a 3rd retry process are demonstrated.

As described earlier with reference to FIG. 14, FIG. 20 (f), the first pressure P ₁ near vacuum opening pressure at time t ₇ from the second pressure P ₂ closer to the atmospheric pressure When it starts to decrease, the semiconductor die 15 is bent and deformed to leave the surface 18a of the collet 18 and air flows into the suction hole 19, so that the amount of air leak detected by the flow sensor 106 shown in FIG. Come on. Then, FIG. 20 (e), FIG. 20 as shown (d), the first pressure P ₁ closer to the suction surface pressure and opening pressure in the vacuum at the time t _8, the second close to the third pressure P ₃ to the atmospheric pressure the pressure P _2, when start to raise the fourth pressure P _4, air leakage quantity detected by the flow sensor 106 shown in FIG. 1 is started lowering, as shown in FIG. 15, the semiconductor die 15 to the time t ₉ is the collet 18 The amount of air leakage becomes zero and the semiconductor die 15 in the region facing the front end surface 38a of the peripheral annular moving element 31 is peeled from the surface 12a of the dicing sheet 12. On the other hand, when the semiconductor die 15 is not peeled off from the surface 12a of the dicing sheet 12, the opening pressure and the suction surface pressure are changed from the first pressure P ₁ close to vacuum to the second pressure close to atmospheric pressure from the third pressure P ₃ . the pressure P _2, be raised to the fourth pressure P _4, while the semiconductor die 15 is attached to a dicing sheet 12, since no vacuum adsorbed on the surface of the collet 18, the air leakage amount, even if the time t ₉ It will not be zero.

  Thus, when the semiconductor die 15 is peeled from the dicing sheet 12, as shown in FIG. 21A, the air leak amount increases from zero and then decreases to zero, and the semiconductor die 15 is reduced to the dicing sheet. If it does not peel off from 12 well, as shown in FIG. 21 (c), the air leak amount does not decrease to zero while maintaining a certain flow rate after increasing from zero. Since the air leak amount is an analog amount, in order to accurately detect the separation, in the third separation determination step, the air leakage amount signal shown in FIGS. b) An air leak amount differential value as shown in FIG. 21 (d) is calculated.

As shown in FIG. 21B, if the semiconductor die 15 is peeled off successfully, the air leak amount rises from zero and then falls to zero. Therefore, the differential value of the air leak amount is once a positive value. After becoming, it becomes a negative value. On the other hand, as shown in FIG. 21 (d), if the semiconductor die 15 is not peeled off well, the air leak amount rises from zero and remains as it is, so the differential value of the air leak amount is once After becoming a positive value, it becomes near zero. Therefore, when the threshold range of the differential value of the air leak amount is set between + S and −S as shown in FIGS. 21B and 21D, the semiconductor as shown in FIG. When the die 15 is peeled off successfully, the differential value of the air leak amount exceeds the threshold range twice (two times in total, once in the plus direction and once in the minus direction). On the other hand, when the semiconductor die 15 is not peeled off well, as shown in FIG. 21D, the differential value of the air leak amount exceeds the threshold value only once on the plus side. Therefore, in the third peel determining step, when a 20 number of times the differential value of the air leakage amount exceeds a predetermined threshold range between times t ₉ from the time t ₇ in (f) is 2 (even number), the semiconductor Assume that the die 15 is peeled off and proceed to the next peeling step. If the number of times the differential value of the air leak amount exceeds a predetermined threshold range is 1 (odd number), the semiconductor die 15 is peeled off. If not, the number of times is set to 0 (the counter is cleared) before proceeding to a third retry process described below.

When the differential value of the air leak amount reaches −S in the region where the differential value of the air leak amount in FIG. 21B is negative (time t _{1 in} FIG. 21A and FIG. 21B). ), As shown in FIG. 21 (a), the actual collet air leak amount deviates from the maximum leak amount and starts to decrease. Therefore, after time t ₁ in FIG. 21A and FIG. 21B, it can be predicted that the semiconductor die 15 will be erect (the semiconductor die 15 will be directed to the surface 18a of the collet 18). It can also be said that S is a turning point where peeling is toward convergence. Therefore, when the differential value of the air leak amount reaches the threshold value −S, the next peeling process may be performed, and the peeling time can be shortened and damage to the semiconductor die 15 can be reduced.

As shown in FIGS. 22E and 22D, the controller 150 does not move the peripheral annular moving element 31 and vacuums the adsorption pressure from the fourth pressure P ₄ close to atmospheric pressure at time t _9. third reduced pressure P ₃ closer to the opening pressure at time t ₂₁ decreases from the second pressure P ₂ closer to the atmospheric pressure in the first pressure P ₁ near vacuum. Then, FIG. 22 (d) at time t _22, as shown in FIG. 22 (e), the adsorption pressure, the third pressure P ₃ closer to the vacuum opening pressure respectively, fourth closer to the first pressure P ₁ to the atmospheric pressure The pressure P ₄ is increased to the second pressure P ₂ (third retry process). The third retry process, the air leakage amount during the time t ₂₃ from the time t ₂₂ in FIG. 22 (f) is zero decreases, the differential value of the air leakage amount is once a predetermined threshold range when the Exceeds (exceeds negative threshold range). Thus, since the number of times the differential value of the air leakage amount between times t ₇ from the time t ₂₃ to shown in FIG. 22 (f) exceeds a predetermined threshold value range is 2 (even number), the control unit 150, peripheral It is determined that the semiconductor die 15 in the region facing the tip surface 38a of the annular moving element 31 has been peeled off from the surface 12a of the dicing sheet 12, and the number of times is measured before the third retry process is finished and the process proceeds to the next third peeling process. Set to 0 (clear counter).

  In addition, when performing the third peeling step a plurality of times, the controller 150 counts the number of times that the differential value of the air leak amount has exceeded a predetermined threshold range, and when the count number becomes an even number, If the count number becomes an odd number, the process may proceed to the third retry process. For example, when a predetermined portion of the semiconductor die 15 can be peeled off in the first third peeling step, the differential value count is 2 (even), so the process proceeds to the second third peeling step. If the predetermined portion of the semiconductor die 15 is not peeled off in the second third peeling step and the number of times the differential value of the air leak amount exceeds the predetermined threshold range is 1, the cumulative count is 3 ( Therefore, the process proceeds to the third retry process without proceeding to the third peeling process. When the predetermined portion of the semiconductor die 15 can be peeled off in the third retry process, the number of times that the differential value of the air leak amount exceeds the predetermined threshold range is counted once, so the integrated count number is 4 ( Therefore, the process proceeds to the third third peeling step. In this way, by determining whether or not to proceed to the next third peeling step depending on whether the integrated count number is an even number or an odd number, how many times the third die peeling step has failed to peel the semiconductor die Can be determined only by the number of counts.

  As described above, the semiconductor die pick-up device 500 of the present embodiment proceeds to the next peeling step after confirming whether or not the semiconductor die 15 has been peeled off from the dicing sheet 12, so that the semiconductor die 15 is subjected to the peeling operation during the peeling operation. Damage to the die 15 can be suppressed.

  Next, the second peeling process (second peeling program 159), the second peeling confirmation process, and the second retry process will be described with reference to FIG. The same operations as those in the third peeling step (third peeling program 160), the third peeling confirmation step, and the third retry step described above with reference to FIGS. Is omitted.

As shown in FIG. 23, the second peeling process (second release program 159), second release checking step, the second retry step includes a third pressure P close the suction pressure to the vacuum during the time t ₂ of t ₃ After setting to ₃ , with the suction pressure maintained at the third pressure P ₃ , the opening pressure and the peripheral annular movement are the same as in the third peeling step (third peeling program 160), the third peeling confirmation step, and the third retry step. position of the element 31, the position of the intermediate annular mobile element 40, intended to change the position of the collet 18, except for holding the suction pressure to the third pressure P _3, the third separation step, the third peeling checking step, the This is the same as the 3 retry process. The second peeling step (second peeling program 159), the second peeling confirmation step, and the second retry step have the same effects as the third peeling step (third peeling program 160), the third peeling confirmation step, and the third retry step. Play.

  Next, an embodiment in which the moving element 630 is constituted by five plate-like moving elements 631 to 635 will be described with reference to FIGS. 25 to 38. The same members as those in the embodiment described above with reference to FIGS. 1 to 20 are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIG. 25, the moving element 630 includes five first to fifth plate-like moving elements 631 to 635 arranged in the moving direction of the slider 51 shown in FIG. Is arranged so as to protrude from the suction surface 22 of the stage 20 by a height H ₀ . As in the above-described embodiment, each plate-like moving element 631 to 635 is in contact with the slider 51, and the movement of the slider 51 moves each plate-like moving element 631 to 635 between the first position and the second position. An inclined surface is provided. The inclined surfaces are arranged so as to be shifted in the moving direction of the slider 51 so that the plate-like moving elements 631 to 635 sequentially move from the first position to the second position along the moving direction of the slider 51. When the slider 51 is moved by the stepped surface forming mechanism 300, the moving elements 631 to 635 move from the respective tip surfaces 631a to 635a suction surfaces in the order of H ₀ → H ₁ → H ₂ .

As in the embodiment described above, the control unit 150 first executes the alignment program 157 shown in FIG. In the initial state, the front end surfaces 631 a to 635 a of the plate-like moving elements 631 to 635 are in the first position protruding from the suction surface 22 of the stage 20 by the height H _0. Is raised so that the front end surfaces 631a to 635a of the moving elements 631 to 635 are brought into close contact with the back surface 12b of the dicing sheet 12. Then, the control unit 150 again uses the wafer holder horizontal direction driving unit 110 to pick up the tip surfaces 631a to 635a (steps) of the moving element 630 in which the semiconductor die 15 to be picked up slightly protrudes from the suction surface 22 of the stage 20. Adjust the horizontal position so that it is directly above.

As shown in FIG. 26, since the size of the semiconductor die 15 is smaller than the opening 23 of the stage 20 and larger than the width or depth of the moving element 630, the outer periphery of the semiconductor die 15 is finished when the position adjustment of the stage 20 is completed. The end is between the inner surface 23a of the opening 23 of the stage 20 and the outer surface 631b of the first plate-like moving element 631, or between the inner surface 23a and the outer surface 635b of the fifth plate-like moving element 635, that is, the inner surface of the opening 23. 23a and the outer surfaces 631b and 635b of the first and fifth plate-like moving elements 631 and 635 are directly above the gap d. In the initial state, the pressure of the groove 26 or the suction surface 22 of the stage 20 is atmospheric pressure, and the pressure of the opening 23 is also atmospheric pressure. In the initial state, the front end surfaces 631a to 635a of the plate-like moving elements 631 to 635 are in the first position protruding by the height H ₀ from the suction surface 22 of the stage 20, and thus the front end surfaces 631a to 635a. the height of the back surface 12b of which the dicing sheet 12 also contacts has a first position protruding by a height H ₀ from the suction surface 22. Further, the back surface 12 b of the dicing sheet 12 slightly floats from the suction surface 22 at the periphery of the opening 23, and is in close contact with the suction surface 22 in a region away from the opening 23. When the horizontal position adjustment is completed, the control unit 150 causes the collet driving unit 130 shown in FIG. 1 to lower the collet 18 onto the semiconductor die 15 to land the surface 18a of the collet 18 on the semiconductor die 15. When the collet 18 lands on the semiconductor die 15, the control unit 150 switches the three-way valve 101 in a direction in which the suction hole 19 of the collet 18 and the vacuum device 140 are communicated by the driving unit 102 of the suction mechanism 100. As a result, the suction hole 19 is evacuated, and the collet 18 sucks and fixes the semiconductor die 15 to the surface 18a (end of the alignment program). At this time, the height of the surface 18a of the collet 18 is diced to the height of each of the front end surfaces 631a to 635a of the plate-like moving elements 631 to 635 (height H ₀ from the suction surface 22), as shown in FIG. The height Hc is obtained by adding the thickness of the sheet 12 and the thickness of the semiconductor die 15.

Next, the control unit 150 executes the first peeling program 158 shown in FIG. The control unit 150 outputs a command to switch the adsorption pressure from the fourth pressure P ₄ close to atmospheric pressure to the third pressure P ₃ close to vacuum at time t ₁ shown in FIG. This command, adsorption pressure at time t ₂ as shown in FIG. 38 (e) is the third pressure P ₃ near vacuum. Then, the back surface 12b of the dicing sheet 12 at the periphery of the opening 23 is vacuum-sucked to the surface of the suction surface 22 as indicated by an arrow 202 in FIG. Since the front end surfaces 631a to 635a of the plate-like moving elements 631 to 635 are in the first position protruding from the suction surface 22 of the stage 20 by the height H _{0, the} dicing sheet 12 has an oblique downward pulling force. F ₁ is applied. Due to this pulling force F ₁ , a deviation occurs between the outer peripheral portion of the semiconductor die 15 or the peripheral portion and the surface 12 a of the dicing sheet 12. This deviation triggers the separation between the dicing sheet 12 and the outer peripheral portion of the semiconductor die 15 or the peripheral portion.

As shown in FIG. 38 (e), the control unit 150 holds for a predetermined time after the adsorption pressure reaches the third pressure P ₃ close to vacuum at time t ₂ , and as shown in FIG. 38 (f). At time t ₃ , a command for switching the opening pressure from the second pressure P ₂ close to atmospheric pressure to the first pressure P ₁ close to vacuum is output. This command, as shown by the arrow 206 in FIG. 28, the air of the opening 23 is sucked into the vacuum apparatus 140, as shown in FIG. 38 (f), at time t ₄ the first pressure close opening pressure in the vacuum the P _1. As a result, as shown by an arrow 203 in FIG. 28, the gap d between the inner surface 23a of the opening 23 and the outer surface 631b of the first plate-like moving element 631 and the gap d between the outer surface 635b of the fifth plate-like moving element 635 are directly above. The dicing sheet 12 is pulled downward. In addition, the peripheral portion of the semiconductor die 15 positioned immediately above each gap d is pulled by the dicing sheet 12 and is bent and deformed downward as indicated by an arrow 204. As a result, the peripheral portion of the semiconductor die 15 is separated from the surface 18 a of the collet 18. At the time t _2, when the adsorption pressure becomes the third pressure P ₃ close to vacuum, a gap is generated between the outer peripheral portion of the semiconductor die 15 and the surface 12 a of the dicing sheet 12. Is formed as a trigger for peeling from the surface 12a of the dicing sheet 12, the peripheral portion of the semiconductor die 15 begins to peel from the surface 12a of the dicing sheet 12 while being bent and deformed as indicated by an arrow 204 in FIG. Yes.

As shown in FIG. 28, when the peripheral portion of the semiconductor die 15 is separated from the surface 18a of the collet 18, air flows into the suction hole 19 of the collet 18 in a vacuum as shown by an arrow 205 in FIG. Come on. The flow rate of air that flows in (the amount of air leak) is detected by the flow rate sensor 106. As shown in FIG. 38 (f), as the opening pressure decreases from the second pressure P ₂ close to atmospheric pressure to the first pressure P ₁ close to vacuum from time t ₃ to time t ₄ , the semiconductor die since 15 comes to bending deformation is pulled downwardly together with the dicing sheet 12, as shown in FIG. 38 (g), air leakage quantity coming flowed into the suction hole 19 of the collet 18 from time t ₃ t Increasing toward ₄ .

Controller 150, FIG. 38 (f), FIG. 38 (e), the between time t ₄ of time t _5, the first near the opening 23 and the groove 26 or suction surface 22 of the stage 20 in the vacuum respectively The pressure P ₁ and the third pressure P ₃ are maintained. During this time, as indicated by an arrow 207 in FIG. 29, the peripheral portion of the semiconductor die 15 returns to the surface 18 a of the collet 18 due to the vacuum of the suction hole 19 of the collet 18 and the elasticity of the semiconductor die 15. As the peripheral portion of the semiconductor die 15 toward the surface 18a of the collet 18, as shown at time t ₅ from time t ₄ in FIG. 38 (g), air leakage quantity coming flowed into the suction hole 19 of the collet 18 is reduced At time t ₅ , as shown in FIG. 29, when the semiconductor die 15 is vacuum-sucked on the surface 18 a of the collet 18, the amount of air leakage becomes zero. At this time, the peripheral portion of the semiconductor die 15 is peeled off from the surface 12a of the dicing sheet 12 located immediately above each gap d (initial peeling step). When the peripheral portion of the semiconductor die 15 is initially peeled from the surface 12a of the dicing sheet 12, the dicing sheet 12 located immediately above each gap d of the opening 23 is displaced downward. The control unit 150 detects the downward displacement of the dicing sheet 12 (displacement in the contact / separation direction with respect to the suction surface 22) by the sheet displacement detection sensor 107, and if the detected displacement exceeds a predetermined threshold, the semiconductor It is determined that the peripheral portion of the die 15 is initially peeled from the surface 12a of the dicing sheet 12 positioned immediately above each gap d. If the detected displacement is equal to or smaller than the predetermined threshold value, it is determined that the peripheral portion of the semiconductor die 15 is not initially peeled off from the surface 12a of the dicing sheet 12 positioned immediately above each gap d (first). 1 peeling judgment process). When the control unit 150 determines that the peripheral portion of the semiconductor die 15 is initially peeled, the control unit 150 proceeds to the next peeling step. Further, when the control unit 150 determines that the peripheral portion of the semiconductor die 15 is not initially peeled, the control unit 150 executes a first retry process similar to that of the above-described embodiment, and the detected displacement is a predetermined value. When the displacement is exceeded, the first retry process is ended and the process proceeds to the next peeling process (end of the first peeling program).

Next, the control unit 150 executes the third peeling program 160 shown in FIG. As shown in FIGS. 38 (f) and 38 (e), the controller 150 holds the opening pressure and the adsorption pressure at the first pressure P ₁ and the third pressure P ₃ close to vacuum for a predetermined time, At t ₅ , a command for switching the opening pressure and the adsorption pressure from the first pressure P ₁ and the third pressure P ₃ close to vacuum to the second pressure P ₂ and the fourth pressure P ₄ close to atmospheric pressure are output. By this command, air flows into the opening 23 and the groove 26 as indicated by arrows 210 and 211 shown in FIG. 30, and therefore, from time t ₅ as shown in FIGS. 38 (e) and 38 (g). The opening pressure and the adsorption pressure increase from the first pressure P ₁ and the third pressure P ₃ close to vacuum to the second pressure P ₂ and the fourth pressure P ₄ close to atmospheric pressure toward the time t ₆ .

When the opening pressure and the adsorption pressure are increased to the second pressure P ₂ and the fourth pressure P ₄ that are close to the atmospheric pressure, the dicing sheet 12 positioned immediately above the gap d that has been pulled downward in vacuum is indicated by an arrow in FIG. As indicated by 212, it is returned upward by the tensile force applied when it is fixed to the wafer holder 10. Further, the dicing sheet 12 at the periphery of the opening 23 is slightly lifted from the suction surface 22 due to the pulling force.

As shown in FIGS. 38 (f) and 38 (e), the controller 150, when the opening pressure and the adsorption pressure become the second pressure P ₂ and the fourth pressure P ₄ that are close to the atmospheric pressure at time t ₆ , As shown in FIG. 38 (d), the height of the tip surface 631a of the first plate-like moving element 631 is lowered by the height H ₁ from the first position (the initial position where the height from the suction surface 22 is H ₀ ). A command to set the second position is output. By this command, the motor 77 of the drive unit 25 shown in FIG. 1 rotates counterclockwise as indicated by an arrow a shown in FIG. As a result, the link member 60 rotates clockwise as indicated by an arrow c shown in FIG. 1, and the slider 51 starts moving toward the right as indicated by an arrow A shown in FIG.

Similar to the embodiment described above, as shown in FIG. 4 (b), when the slider 51 is moved a distance L ₁ to the right from the reference position, the first plate-shaped moving element 631 higher than the original first position of It is moved by the lower H _1, as indicated by an arrow 214 in FIG. 31, the distal end surface of the first plate-shaped moving element 631 631a at the first position (initial position) from the height H ₁ by the lower adsorption It moves to a second position slightly lower than the surface 22 (a position lower by a height (H ₁ −H ₀ ) from the suction surface 22). As shown in FIG. 31, the heights of the tip surfaces 632a to 635a of the second to fifth plate-like moving elements 632 to 635 remain at the first position (initial position). The distal end surface 631a of the first plate-like moving element 631 and the distal end surfaces 632a to 635a are stepped surfaces having steps. Further, the tip surfaces 632a to 635a of the second to fifth plate-like moving elements 632 to 635 are stepped surfaces with respect to the suction surface 22, respectively. When the slider 51 moves to the right by the distance L ₁ from the reference position, the control unit 150 stops the rotation of the motor 77.

Next, the control unit 150 outputs a command to switch the adsorption pressure from the fourth pressure P ₄ close to atmospheric pressure to the third pressure P ₃ close to vacuum at time t ₆ . By this command, the drive unit 92 of the adsorption pressure switching mechanism 90 switches the three-way valve 91 so that the groove 26 and the vacuum device 140 are in communication. Thereby, as indicated by an arrow 213 in FIG. 31, the air in the groove 26 is sucked toward the vacuum device 140, and the pressure of the groove 26 and the suction pressure of the suction surface 22 are the third pressure P close to vacuum. _The dicing sheet 12 is vacuum-sucked to the suction surface 22. At this time, as shown in FIG. 38 (f), the pressure of the opening 23 so has the second pressure P ₂ close to atmospheric pressure, and back surface 12b of the dicing sheet 12 that is located right above the respective gaps d There is a gap between the tip surface 631a of the first plate-like moving element 631.

As shown in FIG. 38 (f), the control unit 150 outputs a command to switch the opening pressure from the second pressure P ₂ close to atmospheric pressure to the first pressure P ₁ close to vacuum at time t ₇ . This command, as indicated by an arrow 215 in FIG. 32, the air in the opening 23 is sucked into the vacuum apparatus 140, the time t _8, as shown in FIG. 38 (f), the opening pressure close to vacuum The first pressure P ₁ is obtained. When the opening pressure is reduced from the second pressure close to atmospheric pressure to the first pressure P ₁ close to vacuum, the dicing sheet 12 positioned (opposed) immediately above the front end surface 631a of the first plate-like moving element 631 is shown in FIG. As shown by the arrow 216, the back surface 12b is pulled downward so as to contact the front end surface 631a. As a result, as indicated by an arrow 217 in FIG. 32, a part of the semiconductor die 15 located immediately above the front end surface 631a of the semiconductor die 15 is bent downward and is separated from the surface 18a of the collet 18, and the air is colleted. It flows into the 18 suction holes 19. Further, when the opening pressure is reduced from the second pressure close to the atmospheric pressure to the first pressure P ₁ close to the vacuum, the inner surface 23a of the opening 23 and the fifth plate-like moving element 635 are similar to those described with reference to FIG. The dicing sheet 12 immediately above the gap d with the outer surface 635b is pulled downward and bent downward as indicated by an arrow 204, and the peripheral portion of the semiconductor die 15 on the fifth plate-like moving element side is the collet 18 Move away from surface 18a. Then, as shown by an arrow 205 in FIG. 32, air flows into the suction hole 19 of the collet 18 in a vacuum. The amount of air leak flowing into the suction hole 19 is detected by the flow sensor 106 shown in FIG. Air leak amount, as shown in FIG. 38 (g), increases between time t ₇ the opening pressure is lowered at time t _8.

At time t ₈ , the controller 150 increases the opening pressure and the adsorption pressure from the first pressure P ₁ and the third pressure P ₃ close to vacuum, respectively, as shown in FIGS. 38 (f) and 38 (e). The pressure is increased to the second pressure P ₂ and the fourth pressure P ₄ that are close to the atmospheric pressure. As a result, air flows into the opening 23 and the groove 26 as shown by arrows 220 and 221 in FIG. 33, and the pressure in the opening 23 and the pressure in the groove 26 are shown in FIGS. 38 (f) and 38 (e). Alternatively, the pressure on the adsorption surface 22 increases to a second pressure P ₂ and a fourth pressure P ₄ that are close to atmospheric pressure, respectively. Accordingly, as indicated by an arrow 223 in FIG. 33, the dicing sheet 12 immediately above the gap d between the outer surface 631b of the first plate-like moving element 631 and the inner surface 23a of the opening 23 becomes the first plate-like moving element 631. Displaces upward from the tip surface 631a. The semiconductor die 15 in the region facing the tip surface 631a returns toward the surface 18a of the collet 18 as indicated by the arrow 224 shown in FIG. 33, along with the upward displacement of the dicing sheet 12. Also, as shown in FIG. 33, the dicing sheet 12 immediately above the gap d between the outer surface 635b of the fifth plate-like moving element 635 and the inner surface 23a of the opening 23 is also displaced upward as indicated by an arrow 223. The peripheral portion of the semiconductor die 15 on the fifth plate-like moving element side also returns toward the surface 18a of the collet 18 as indicated by an arrow 224 shown in FIG. When the semiconductor die 15 approaches the surface 18a of the collet 18 begins to decrease air leakage quantity flowing into the suction hole 19 of the collet 18 as between times t ₉ from the time t ₈ in FIG. 38 (g), air leakage amount at time t ₉ in FIG. 38 (g) becomes zero. At this time, the semiconductor die 15 is vacuum-sucked on the surface 18a of the collet 18, and the region of the semiconductor die 15 facing the tip surface 631a is peeled off from the surface 12a of the dicing sheet 12 (first third peeling step).

Control unit at time t ₉ 0.99 is moved distal end surface 632a of the second plate-shaped moving element 632 in the first position (height position of H ₀ from the suction surface 22) by a height H ₁ from the lower second position Command to output. In response to this command, the slider 51 moves rightward to the position of the distance L ₂ from the reference position (moves rightward by the distance (L ₂ −L ₁ )), and as shown by an arrow 227 in FIG. The tip surface 632a of the two-plate-like moving element 632 is a second position (a position lower than the suction surface 22 by H ₁ −H ₀ ) lower than the first position (a position higher by the height H ₀ from the suction surface) by a height H _1. ) Further, as shown by arrow 226 in FIG. 34, the distal end surface 631a of first plate-shaped moving element 631 that was in the second position, the first position (initial position) Height H ₂ as low as third position from (adsorption Move from the surface 22 to a position lower by H ₂ −H ₀ ). The tip surface 631a of the first plate-like moving element 631, the tip surface 632a of the second plate-like moving element 632, and the tip surfaces 633a to 635a of the third to fifth plate-like moving elements 633 to 635 have steps with each other. At the same time, it is a step surface with respect to the suction surface 22.

The control unit 150 includes, as shown in FIG. 38 (e), and outputs a command for switching the suction pressure at time t ₉ the fourth pressure P ₄ close to the atmospheric pressure to a third pressure P ₃ near vacuum, FIG. As shown in FIG. 38 (f), a command for switching the opening pressure from the second pressure P ₂ close to atmospheric pressure to the first pressure P ₁ close to vacuum is output at time t ₁₀ after a predetermined time has elapsed from time t ₉ . Thus, as indicated by an arrow 225,228 in FIG. 35, the air in the air and the opening 23 of the groove 26 is drawn into the vacuum apparatus 140, the opening pressure, the first pressure P near vacuum each time t ₁₁ adsorption pressure ₁ and the third pressure P ₃ . Then, as indicated by arrows 229 and 230 shown in FIG. 35, the dicing sheet 12 has the tip plate 631a of the first plate-like moving element 631 lowered to the third position and the second plate-like lowered to the second position. The moving element 632 is pulled toward the distal end surface 632a and displaced downward. Along with this, the region of the semiconductor die 15 facing the tip surfaces 631a and 632a is also bent and deformed downward away from the surface 18a of the collet 18 as indicated by an arrow 231 in FIG. Then, air flows into the suction hole 19 from between the surface 18a of the collet 18 and the semiconductor die 15 as indicated by an arrow 232 in FIG. Similarly to the case described with reference to FIG. 32, when the opening pressure decreases from the second pressure close to atmospheric pressure to the first pressure P ₁ close to vacuum, the inner surface 23 a of the opening 23 and the fifth plate-like moving element 635 The dicing sheet 12 immediately above the gap d with the outer surface 635b is pulled downward and bent downward as indicated by an arrow 204, and the peripheral portion of the semiconductor die 15 on the fifth plate-like moving element side is the collet 18 Move away from surface 18a. Then, as shown by an arrow 205 in FIG. 35, air flows into the suction hole 19 of the collet 18 in a vacuum. Thus, as shown in FIG. 38 (g), between time t ₁₀ the time t _11, the air leakage amount flowing into the suction hole 19 of the collet 18 increases.

Controller 150, FIG. 38 (f), as shown in FIG. 38 (e), the opening pressure at time t _11, respectively atmospheric adsorption pressure first pressure P ₁ near vacuum, respectively, from the third pressure P ₃ A command to switch to the second pressure P ₂ and the fourth pressure P ₄ close to is output. As a result of this command, air flows into the opening 23 and the groove 26 as indicated by arrows 241 and 242 in FIG. 36, and the opening pressure and the adsorption pressure increase, so that the dicing sheet 12 is indicated by an arrow 243 shown in FIG. Then, it is displaced upward. Due to the upward displacement of the dicing sheet 12 and the vacuum of the suction hole 19 of the collet 18, the semiconductor die 15 approaches the surface 18 a of the collet 18 as indicated by an arrow 244. Further, as shown in FIG. 36, the dicing sheet 12 immediately above the gap d between the outer surface 635b of the fifth plate-like moving element 635 and the inner surface 23a of the opening 23 is also displaced upward as indicated by an arrow 243. The peripheral portion of the semiconductor die 15 on the fifth plate-shaped moving element side also approaches the surface 18a of the collet 18 as indicated by an arrow 244 shown in FIG. Thus, as shown in FIG. 38 (g), between time t ₁₁ the time t _12, the air leakage amount flowing into the suction hole 19 is gradually decreased, the surface 18a of the final semiconductor die 15 is the collet 18 It becomes zero at time t ₁₂ which is vacuum suction. Further, FIG. 38 (f), as shown in FIG. 38 (e), at time t _12, the opening pressure close to the atmospheric respective adsorption pressure, the second pressure P _2, the fourth pressure P _4. In this state, as shown in FIG. 36, although the semiconductor die 15 in the region corresponding to the tip surfaces 633a to 635a of the third to fifth plate-like moving elements 633 to 635 is stuck to the dicing sheet 12, The regions corresponding to the tip surfaces 631a and 632a of the second plate-like moving elements 631 and 632, the regions corresponding to the gaps d, and the region around the semiconductor die 15 on the fifth plate-like moving element side are from the dicing sheet 12. It is in the peeled state (second third peeling step). Thus, the control unit 150 ends the third peeling program 160.

After finishing the third peeling program, the control unit 150, at time t _12, the distal end surface 633a of the third plate-shaped moving element 633 (the height of the suction surface 22 the position of the H ₀₎ the first position high from A command to move to the second position which is lower by the height H ₁ is output. By this command, the slider 51 moves rightward to the position of the distance L ₃ from the reference position (moves rightward by the distance (L ₃ −L ₂ )), and as shown by an arrow 247 in FIG. The tip surface 633a of the three-plate-shaped moving element 633 is a second position (a position lower than the suction surface 22 by H ₁ −H ₀ ) lower than the first position (a position higher by the height H ₀ than the suction surface) by a height H _1. ) Further, as shown by arrow 246 in FIG. 37, the distal end surface 632a of the second plate-shaped moving element 632 that was in the second position, the first position (initial position) Height H ₂ as low as third position from (adsorption Move from the surface 22 to a position lower by H ₂ −H ₀ ). Further, the distal end surface 631a of the first plate-like moving element 631 remains at the third position. Accordingly, the tip surface 631a of the first plate-like moving element 631, the tip surface 632a of the second plate-like moving element 632, the tip surface 633a of the third plate-like moving element 633, the fourth and fifth plate-like moving elements 634, and so on. Each front end surface 634a, 635a of 635 is a stepped surface with a step between each other and at the same time a stepped surface with respect to the suction surface 22.

Further, the control unit 150 outputs a command to switch the adsorption pressure to the third pressure P ₃ close to vacuum at time t ₁₂ . By this command, as indicated by an arrow 245 in FIG. 37, the air in the groove 26 is sucked into the vacuum device 140, the groove 26 is evacuated, and the dicing sheet 12 is vacuum-sucked to the suction surface 22. Since a considerable part of the semiconductor die 15 has been peeled off from the dicing sheet 12 in the process up to the second third peeling step described above, the adhesive force between the semiconductor die 15 and the dicing sheet 12 has been considerably reduced. Yes. For this reason, when the front end surface 633a of the third plate-like moving element 633 is moved to the second position, the dicing sheet 12 in the region corresponding to the front end surface 633a remains in the groove 26 while the semiconductor die 15 is adsorbed to the collet 18. As shown by an arrow 278 in FIG. 37, the semiconductor die 15 is moved away by an obliquely downward pulling force F ₆ generated by applying a vacuum. For this reason, in the state shown in FIG. 37, although the semiconductor die 15 in the region corresponding to the tip surfaces 634a and 635a of the fourth and fifth plate-like moving elements 634 and 635 is stuck to the dicing sheet 12, the semiconductor die Most of the area 15 is in a state of being peeled from the dicing sheet 12.

Control unit 150 outputs a command to raise the collet 18 to time t ₁₃ of FIG. 38 (a). By this command, the collet driving unit 130 shown in FIG. 1 drives the motor to raise the collet 18 as indicated by an arrow 279 in FIG. Since the dicing sheet 12 is vacuum-sucked to the suction surface 22 by the vacuum of the groove 26, when the collet 18 is lifted, areas corresponding to the front end surfaces 634a and 635a of the fourth and fifth plate-like moving elements 634 and 635 are obtained. The semiconductor die 15 is peeled off from the dicing sheet 12 and the semiconductor die 15 is picked up while being adsorbed by the collet 18.

After picking up the semiconductor die 15, when the control unit 150 returns the slider 51 to the initial position at time t ₁₄ in FIG. 38, the front end surfaces 631 a to 635 a of the plate-like moving elements 631 to 635 return to the first position. Further, the control unit 150 returns the adsorption pressure and the opening pressure to the atmospheric pressure, and ends the pickup operation.

As described above, the controller 150 sets the opening pressure and the adsorption pressure to the first pressure P ₁ close to vacuum and the second pressure close to atmospheric pressure from the third pressure P ₃ , respectively, from time t ₅ to time t ₆ . While switching to the pressure P ₂ and the fourth pressure P ₄ , the front end face 631a of the first plate-like moving element 631 is moved from the first position to the second position, and the opening pressure and adsorption are taken from time t ₈ to t _9. The pressure is switched from the first pressure P ₁ close to vacuum, the third pressure P ₃ to the second pressure P ₂ close to the atmospheric pressure, and the fourth pressure P _4, and the tip surface 632a of the second plate-like moving element 632 is changed to the first pressure P ₁ . In order to move from the first position to the second position, the opening pressure and the adsorption pressure are switched from the first pressure P ₁ near the vacuum to the second pressure P ₂ and the fourth pressure P ₄ near the atmospheric pressure from the third pressure P _3. Every time, the fifth plate-like movement from the first plate-like moving element 631 along the moving direction of the slider 51 is performed. The third peeling process is repeated so as to sequentially move the tip surface from the first position to the second position toward the element 635, and the semiconductor die 15 is moved stepwise from one to the other along the moving direction of the slider 51. The dicing sheet 12 is peeled off.

  The semiconductor die pick-up device of the embodiment described above has an effect that it is possible to suppress damage to the semiconductor die during pick-up as in the embodiment described above.

  10 wafer holder, 11 wafer, 12 dicing sheet, 12a surface, 12b back surface, 13 ring, 14 gap, 15 semiconductor die, 16 expanding ring, 18 collet, 18a surface, 19 suction hole, 20 stage, 22 suction surface, 23 opening , 23a, 28a inner surface, 24 base portion, 25 driving portion, 26, 31a, 45a, 62, 72 groove, 27 suction hole, 28 upper inside, 29 lower inside, 29a stepped portion, 30, 630 moving element, 31 periphery Annular moving element, 32a, 34a guide surface, 33 outer peripheral surface, 333a-333f support plate, 33a-33e annular member, 35a-35e linear cam surface, 36a-36f, 39a-39f horizontal support surface, 37a-37f key part, 38a-38e, 47, 631a-635a Tip surface, 40- 3 Intermediate annular moving element, 45 Columnar moving element, 46 Columnar member, 51 Slider, 52 Semi-cylindrical member, 52a Vertex (top line), 53, 59, 63 Pin, 54 Guide rail, 55 Flange, 56 Piston, 57 Plate member , 58 Spring, 60 Link member, 70 Vertical drive member, 71 Arm, 73 Drive rod, 74 Cam follower, 75 cam, 76 shaft, 77 Motor, 80 Opening pressure switching mechanism, 81, 91, 101 Three-way valve, 82, 92 , 102 Drive unit, 83-85, 93-95, 103-105 Piping, 90 Adsorption pressure switching mechanism 100 Suction mechanism, 106 Flow rate sensor, 107 Sheet displacement detection sensor, 110 Wafer holder horizontal direction drive unit, 120 Stage vertical drive Part, 130 collet drive part, 140 vacuum device, 150 control Unit, 151 CPU, 152 storage unit, 153 device / sensor interface, 154 data bus, 155 control program, 156 control data, 157 alignment program, 158 first peeling program, 159 second peeling program, 160 third peeling program, 300 Step surface formation mechanism, 500 Semiconductor die pick-up device, 631-635 Plate-shaped moving element, 631b, 635b Outer surface.

Claims (21)

A semiconductor die pick-up device for picking up a semiconductor die attached to the surface of a dicing sheet,
A stage including an adsorption surface for adsorbing the back surface of the dicing sheet;
A plurality of moving elements arranged in an opening provided in the suction surface of the stage and moving between a first position whose tip surface is higher than the suction surface and a second position lower than the first position; A step surface forming mechanism for forming a step surface with respect to the suction surface;
An opening pressure switching mechanism for switching the opening pressure of the opening between a first pressure close to vacuum and a second pressure close to atmospheric pressure,
Moving the at least one moving element from the first position to the second position each time the opening pressure is switched from the first pressure to the second pressure when picking up the semiconductor die;
A semiconductor die pick-up device. A semiconductor die pick-up device according to claim 1,
An adsorption pressure switching mechanism for switching the adsorption pressure of the adsorption surface between a third pressure close to vacuum and a fourth pressure close to atmospheric pressure;
When picking up the semiconductor die, switching the opening pressure in a state where the suction pressure is switched from the fourth pressure to the third pressure;
A semiconductor die pick-up device. A pickup device for a semiconductor die according to claim 2,
Holding the suction pressure at the third pressure and switching the opening pressure when picking up the semiconductor die;
A semiconductor die pick-up device. A pickup device for a semiconductor die according to any one of claims 1 to 3,
The opening pressure switching mechanism switches the opening pressure a plurality of times between the first pressure and the second pressure before first moving the moving element from the first position to the second position;
A semiconductor die pick-up device. A pickup device for a semiconductor die according to claim 2,
When picking up the semiconductor die, the adsorption pressure is changed to the first pressure after the opening pressure is changed from the second pressure to the first pressure in a state where the adsorption pressure is changed from the fourth pressure to the third pressure. Moving at least one moving element from the first position to the second position each time switching from 3 pressures to the fourth pressure and switching the opening pressure from the first pressure to the second pressure;
A semiconductor die pick-up device. A semiconductor die pick-up device according to any one of claims 1 to 5,
A peeling detection means for detecting whether or not a part of the semiconductor die facing the tip surface of the moving element moved from the first position to the second position is peeled off from the surface of the dicing sheet;
When the peeling detecting means detects that the part of the semiconductor die is not peeled from the dicing sheet, the moving element is moved from the first position to the second position without moving the opening. Switching the opening pressure again from the second pressure to the first pressure after switching the pressure from the first pressure to the second pressure;
A semiconductor die pick-up device. A semiconductor die pick-up device according to claim 6,
A collet that adsorbs a semiconductor die;
A suction mechanism connected to the collet and sucking air from the surface of the collet;
A flow rate sensor for detecting a suction air flow rate of the suction mechanism,
The peeling detection means determines that peeling has occurred when the number of times that the differential signal obtained by differentiating the suction air flow signal detected by the flow sensor exceeds a predetermined threshold range has become an even number, Judging that it has not peeled,
A semiconductor die pick-up device. A pick-up device for a semiconductor die according to any one of claims 1 to 7,
A sheet displacement detection sensor for detecting a displacement in a contact / separation direction of the dicing sheet with respect to the suction surface between the opening inner surface of the stage and the step surface forming mechanism outer peripheral surface;
Detected by the sheet displacement detection sensor when the opening pressure is switched from the second pressure to the first pressure after a lapse of a predetermined time after the suction pressure is switched from the fourth pressure to the third pressure. When the sheet displacement is less than or equal to a predetermined threshold, the suction pressure is switched from the third pressure to the fourth pressure and the opening pressure is switched from the first pressure to the second pressure. After switching from the fourth pressure to the third pressure, the opening pressure is switched from the second pressure to the first pressure after elapse of a predetermined time, and the opening inner surface of the stage and the step surface forming mechanism outer peripheral surface Peeling the dicing sheet between the semiconductor chip,
A semiconductor die pick-up device. A semiconductor die pick-up device according to claim 8,
The sheet displacement detection sensor uses light having a wavelength in the range of 0% to 30% as a light source, with respect to the dicing sheet.
A semiconductor die pick-up device. A semiconductor die pick-up device according to claim 9,
The sheet displacement detection sensor uses a reflective optical fiber whose light source is an LED having a short wavelength of 0 nm to 300 nm,
A semiconductor die pick-up device. A semiconductor die pick-up device according to any one of claims 1 to 10,
The step surface forming mechanism is:
A columnar moving element located in the center;
A plurality of annular moving elements arranged nested around the columnar moving elements;
A slider that moves in a direction along the suction surface in the opening of the stage,
Each annular moving element includes each inclined surface that is in contact with the slider and moves each annular moving element between the first position and the second position by the movement of the slider;
The inclined surface of the annular moving element on the outer peripheral side and the inclined surface of the annular moving element on the inner peripheral side are the annular surfaces on the inner peripheral side of the tip surface of the annular moving element on the outer peripheral side when the slider moves. The slider is arranged to be shifted in the moving direction of the slider so as to move from the first position to the second position before the tip surface of the moving element;
A semiconductor die pick-up device. A semiconductor die pick-up device according to claim 11,
The columnar moving element includes an inclined surface that is in contact with the slider and moves the columnar moving element between the first position and the second position by the movement of the slider, and the inclined surface includes the slider. Is moved in the moving direction of the slider so that the tip surface of the annular moving element on the inner peripheral side moves from the first position to the second position before the tip surface of the columnar moving element. That they are staggered,
A semiconductor die pick-up device. A semiconductor die pick-up device according to any one of claims 1 to 10,
The step surface forming mechanism is:
A slider that moves in a direction along the suction surface in the opening of the stage;
A plurality of plate-like moving elements arranged to overlap in the moving direction of the slider,
Each of the plate-like moving elements includes each inclined surface that is in contact with the slider and moves each of the plate-like moving elements between the first position and the second position by the movement of the slider.
The inclined surfaces of the plate-like moving elements are arranged to be shifted in the moving direction of the slider so that the plate-like moving elements sequentially move from the first position to the second position along the moving direction of the slider. That
A semiconductor die pick-up device. A method for picking up a semiconductor die for picking up a semiconductor die attached to the surface of a dicing sheet,
A stage including a suction surface for sucking the back surface of the dicing sheet, and a first position higher than the suction surface and lower than the first position are disposed in an opening provided in the suction surface of the stage. A step surface forming mechanism including a plurality of moving elements that move between the second position and forming a step surface with respect to the suction surface; and a first pressure close to vacuum and a second pressure close to atmospheric pressure for the opening pressure of the opening A semiconductor die pickup comprising: an opening pressure switching mechanism for switching between pressures; and an adsorption pressure switching mechanism for switching the suction pressure of the suction surface between a third pressure close to vacuum and a fourth pressure close to atmospheric pressure. Preparing the device;
The tip surface of each moving element of the step surface forming mechanism is set to the first position, and the stage is moved along the suction surface so that the semiconductor die to be picked up is directly above the step surface of the step surface forming mechanism. An alignment process of moving in a different direction;
After the adsorption pressure is switched from the fourth pressure to the third pressure, the opening pressure is switched from the second pressure to the first pressure after a predetermined time has elapsed, and the opening inner surface of the stage and the step surface forming mechanism A first peeling step of peeling the dicing sheet between the outer peripheral surface and the semiconductor chip;
Each time the opening pressure is switched from the first pressure to the second pressure with the adsorption pressure held at the third pressure, at least one moving element is moved from the first position to the second position. A second peeling step of peeling a part of the semiconductor die facing the tip surface of the moving element from the surface of the dicing sheet;
A method for picking up a semiconductor die, comprising: A method for picking up a semiconductor die for picking up a semiconductor die attached to the surface of a dicing sheet,
A stage including a suction surface for sucking the back surface of the dicing sheet, and a first position higher than the suction surface and lower than the first position are disposed in an opening provided in the suction surface of the stage. A step surface forming mechanism including a plurality of moving elements that move between the second position and forming a step surface with respect to the suction surface; and a first pressure close to vacuum and a second pressure close to atmospheric pressure for the opening pressure of the opening A semiconductor die pickup comprising: an opening pressure switching mechanism for switching between pressures; and an adsorption pressure switching mechanism for switching the suction pressure of the suction surface between a third pressure close to vacuum and a fourth pressure close to atmospheric pressure. Preparing the device;
The tip surface of each moving element of the step surface forming mechanism is set to the first position, and the stage is moved along the suction surface so that the semiconductor die to be picked up is directly above the step surface of the step surface forming mechanism. An alignment process of moving in a different direction;
After the adsorption pressure is switched from the fourth pressure to the third pressure, the opening pressure is switched from the second pressure to the first pressure after a predetermined time has elapsed, and the opening inner surface of the stage and the step surface forming mechanism A first peeling step of peeling the dicing sheet between the outer peripheral surface and the semiconductor chip;
The adsorption pressure is switched from the third pressure to the fourth pressure after the opening pressure is switched from the second pressure to the first pressure in a state where the adsorption pressure is switched from the fourth pressure to the third pressure. In addition, each time the opening pressure is switched from the first pressure to the second pressure, at least one of the moving elements is moved from the first position to the second position to face the tip surface of the moving element. A third peeling step of peeling a part of the semiconductor die from the surface of the dicing sheet;
A method for picking up a semiconductor die, comprising: A method for picking up a semiconductor die according to claim 14 or 15,
The semiconductor die pick-up apparatus includes a sheet displacement detection sensor that detects a displacement in a contact / separation direction of the dicing sheet with respect to the suction surface between an opening inner surface of the stage and an outer peripheral surface of the step surface forming mechanism,
The first peeling step includes
A sheet detected by the sheet displacement detection sensor when the opening pressure is switched from the second pressure to the first pressure after a lapse of a predetermined time after the suction pressure is switched from the fourth pressure to the third pressure. When the displacement exceeds a predetermined threshold, it is determined that the dicing sheet between the inner surface of the opening of the stage and the outer peripheral surface of the step surface forming mechanism is separated from the semiconductor chip, and the sheet displacement detection sensor When the detected sheet displacement is equal to or less than a predetermined threshold value, a first peeling determination is made to determine that the dicing sheet between the inner surface of the opening of the stage and the outer peripheral surface of the step surface forming mechanism is not peeled from the semiconductor chip. Process,
When it is determined in the first determination step that the dicing sheet between the inner surface of the opening of the stage and the outer peripheral surface of the step surface forming mechanism is not peeled from the semiconductor chip, the suction pressure is changed from the third pressure. After switching to the fourth pressure and switching the opening pressure from the first pressure to the second pressure, after switching the adsorption pressure from the fourth pressure to the third pressure again, after a predetermined time has elapsed, A first retry step of switching the opening pressure from the second pressure to the first pressure, and peeling the dicing sheet between the opening inner surface of the stage and the outer peripheral surface of the step surface forming mechanism from the semiconductor chip; Including,
A method for picking up a semiconductor die. A method for picking up a semiconductor die according to claim 14 or 16,
The semiconductor die pick-up device includes: a collet that adsorbs a semiconductor die; a suction mechanism that is connected to the collet and sucks air from the surface of the collet; and a flow rate sensor that detects a suction air flow rate of the suction mechanism. Prepared,
The second peeling step includes
When the number of times that the differential signal obtained by differentiating the suction air flow signal detected by the flow sensor exceeds a predetermined threshold range is an even number, the tip of the moving element that has moved from the first position to the second position It is determined that a part of the semiconductor die facing the surface is peeled off from the surface of the dicing sheet, and when the number of times is an odd number, the part of the semiconductor die is peeled off from the surface of the dicing sheet. A second peeling determination step for determining that it is not,
When the second peeling determination step determines that the part of the semiconductor die is not peeled from the surface of the dicing sheet, the moving element is not moved from the first position to the second position. Further, after the opening pressure is switched from the first pressure to the second pressure, the opening pressure is switched again from the second pressure to the first pressure, and the part of the semiconductor die is transferred to the dicing sheet. A second retrying step of peeling from the surface of
A method for picking up a semiconductor die. A method for picking up a semiconductor die according to claim 15 or 16,
The semiconductor die pick-up device includes: a collet that adsorbs a semiconductor die; a suction mechanism that is connected to the collet and sucks air from the surface of the collet; and a flow rate sensor that detects a suction air flow rate of the suction mechanism. Prepared,
The third peeling step includes
When the number of times that the differential signal obtained by differentiating the suction air flow signal detected by the flow sensor exceeds a predetermined threshold range is an even number, the tip of the moving element that has moved from the first position to the second position It is determined that a part of the semiconductor die facing the surface is peeled off from the surface of the dicing sheet, and when the number of times becomes an odd number, the part of the semiconductor die is peeled off from the surface of the dicing sheet. A third peeling determination step for determining that the
When the third peeling determining step determines that the part of the semiconductor die is not peeled from the surface of the dicing sheet, the moving element is not moved from the first position to the second position. The adsorption pressure is changed from the third pressure to the fourth pressure and the opening pressure is changed from the first pressure to the second pressure, and then the adsorption pressure is changed again from the fourth pressure to the third pressure. And a third retry step of switching the opening pressure from the second pressure to the first pressure again to separate the part of the semiconductor die from the surface of the dicing sheet.
A method for picking up a semiconductor die. A method of picking up a semiconductor die according to claim 16,
The sheet displacement detection sensor uses light having a wavelength in the range of 0% to 30% as a light source, with respect to the dicing sheet.
A method for picking up a semiconductor die. A method for picking up a semiconductor die according to claim 19,
The sheet displacement detection sensor uses a reflective optical fiber whose light source is an LED having a short wavelength of 0 nm to 300 nm,
A method for picking up a semiconductor die. A method for picking up a semiconductor die according to claim 14 or 15,
The opening pressure switching mechanism switches the opening pressure a plurality of times between the first pressure and the second pressure before first moving the moving element from the first position to the second position;
A method for picking up a semiconductor die.

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