JP5442801B2 - Semiconductor cutting apparatus and semiconductor cutting method - Google Patents

Description

  The present invention relates to a semiconductor cutting apparatus and a semiconductor cutting method for cutting a semiconductor device such as an IC chip and a memory card from a semiconductor substrate using a laser beam.

  As a method for cutting out individual semiconductor devices by cutting a semiconductor substrate on which a plurality of semiconductor device regions such as a ball grid array (BGA) and a semiconductor chip region such as a CSP are formed along a predetermined cutting line, Patent Documents 1 and 2 There is a cutting method using the laser beam disclosed in the above.

  Then, in the cutting method using laser light, the laser light is scanned along the planned cutting line using a scanning means such as a galvanometer mirror, so that the semiconductor substrate along the planned cutting line having a complicated shape is scanned. Cutting is also possible.

JP 2005-142303 A (paragraphs 0019 to 0022, etc.) JP-A-2005-238246 (paragraph 0014, etc.)

  In the cutting method using laser light, the semiconductor substrate can be cut by one laser light scan by setting the output (intensity) of the laser light high.

  However, if the cutting is completed with one laser beam scan, the cut surface becomes rough. In this case, it is necessary to slow down the cutting (scanning) speed to some extent even if the output of the laser beam is high. For this reason, there is a risk that the amount of heat generated by laser light irradiation increases, the cutting width increases, and the semiconductor is altered (internal elements are destroyed).

  In the case where the semiconductor substrate has a plurality of layers made of different materials, the output of the laser beam is adjusted in accordance with the layer that is most difficult to cut (for example, the latter in the case of having a package resin device and a glass epoxy printed circuit board layer). It is common to match. However, in this method, the roughness of the cut surface of the other layer is deteriorated more than expected, or the increase in the cut width of the other layer due to heat becomes significant.

The present invention is a disconnect of the semiconductor substrate, ensuring good quality cutting surface, suppressing an increase in cutting width, and a semiconductor cutting device and a semiconductor cutting methods to allow fast while preventing semiconductor alteration One of the purposes is to do.

The semiconductor cutting device of the present invention is a semiconductor cutting device that cuts out a plurality of semiconductor devices by cutting one semiconductor substrate along a predetermined cutting line, and outputs laser light and is capable of scanning laser light. When having a cutting blade, driving means for driving the cutting blade, and controls the laser oscillation unit to scan the laser beam along a portion of the planned cutting line of a semiconductor substrate, a part of the planned cutting line Comprises control means for controlling the drive means so as to cut different parts with a cutting blade . The semiconductor substrate is provided with a plurality of semiconductor device regions each surrounded by a predetermined cutting line, and the semiconductor substrate has a printed circuit board layer and a package resin layer made of different materials. The planned cutting line is composed of a plurality of first portions having a linear shape and a plurality of second portions having a deformed line shape different from the linear shape. Control means, out of the planned cutting line provided for a plurality of semiconductor devices area, before cutting the first portion using a cutting blade, to cut the second portion by using a laser beam Control the laser oscillation means. In the cutting of the second portion, the control means sets the frequency of the laser light applied to the printed circuit board layer to be higher than the frequency of the laser light applied to the package resin layer and scans the printed circuit board layer with the laser light. The number of times is different from the number of times of scanning of the laser light with respect to the package resin layer.

  According to the present invention, in the cutting of the plurality of second portions having the irregular line shape among the planned cutting lines, the frequency of the laser light irradiated to the package resin layer is irradiated with the frequency of the laser light irradiated to the printed circuit board layer. The frequency is made higher than the frequency, and the number of scans of the laser light on the printed circuit board layer is made different from the number of scans of the laser light on the package resin layer. For this reason, compared with the case of cutting with a single scan of the laser beam, the frequency and the number of scans of the laser beam with respect to the printed circuit board layer and the package resin layer can be set appropriately, and the cut surface of the printed circuit board layer and the package resin layer The quality can be made good. Further, it is possible to avoid an increase in the cutting width and deterioration of the semiconductor in each of the printed circuit board layer and the package resin layer. Further, since the depth of one cutting is small, the scanning speed can be increased, and the time required for cutting can be shortened as a result even if scanning is performed a plurality of times.

  If such a second portion is cut, then the first portion having a linear shape among the planned cutting lines can be cut by a method suitable for cutting a linear shape such as a cutting blade. It becomes possible.

  As a result, it is possible to cut out a plurality of semiconductor devices having high-quality deformed cut surfaces and straight cut surfaces at high speed.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

  In FIG. 1, the structure of the semiconductor cutting system which is Example 1 of this invention is shown seeing from the upper direction. In FIG. 1, reference numeral 100 denotes a laser cutting unit constituted by a laser cutting processing apparatus, and reference numeral 200 denotes a blade cutting part constituted by a dicing apparatus.

  The laser cutting unit 100 includes a base 101 and a laser oscillator 110 installed on the base 101. Reference numeral 102 denotes a first substrate magazine in which a large number of semiconductor substrates 120 before laser cutting are stored, and the first substrate I is moved from the first substrate magazine 102 to a first position I on the base 101 by a first transport mechanism (not shown). One by one.

  The semiconductor substrate 120 before cutting is shown in FIG. Here, a memory card substrate 120 is shown as an example of one of the semiconductor substrates. The memory card substrate 120 is formed by mounting a memory chip or a controller chip on a printed wiring board on which a plurality of memory card circuits are formed, and then sealing (coating) with a resin.

  A dotted line 130 is a planned cutting line of the memory card substrate 120. The predetermined cutting line 130 includes a first straight line portion 131 that extends continuously in the horizontal direction in the drawing, a second straight line portion 132 that extends continuously in the vertical direction, and these first and second straight line portions (first 1 portion) 131 and 132, and four corner portions (second portions) 133a to 133d having a ¼ arc curve shape as a deformed line portion. However, the planned cutting line 130 is a virtual line and is not actually drawn on the memory card substrate 120, but in the controllers (computers) 150 and 250 provided in the laser cutting unit 100 and the blade cutting unit 200. Stored in the memory.

  Each region 135 surrounded by the two straight portions 131 and 132 and the four corner portions 133a to 133d is cut into the individual semiconductors by cutting the substrate 120 along the predetermined cutting line 130. This is a semiconductor device area to be a memory card as a device. Hereinafter, each semiconductor device area before cutting is referred to as a memory card area 135. The semiconductor device may be other than a memory card, such as a chip element such as an IC or LSI.

  The substrate 120 placed at the first position I is transported to the second position II which is the front of the laser oscillator 110 by a second transport mechanism (not shown). A movable stage (not shown) is provided at the second position II, and the substrate 120 transported on the movable stage is fixed on the movable stage by the negative pressure adsorption of the lower surface thereof. As shown in FIG. 2, the movable stage is driven so that the center of the memory card area 135 is positioned on the central axis LO of the laser oscillator 110. Hereinafter, this position is referred to as a laser irradiation position.

  The laser oscillator 110 is configured as shown in FIG. 3, for example. The laser light emitted from the laser light source 111 is reflected by the Y-axis and X-axis galvanometer mirrors 113 and 114 as scanning means after the beam diameter is enlarged by the beam expander 112. The laser light reflected by the galvanometer mirrors 113 and 114 forms a spot image on the substrate 120 disposed at the cutting position by a condensing optical system 115 such as an f-θ lens.

  The spot image is scanned in the Y-axis direction (vertical direction in FIG. 5) and the X-axis direction (horizontal direction in FIG. 5) according to the rotation of the galvanometer mirrors 113 and 114. Therefore, by controlling the rotation angle of the galvanometer mirrors 113 and 114, the spot image of the laser beam can be moved along the corner portion 133, whereby the movement trajectory of the spot image on the substrate 120 is vaporized and melted. And cut. Thus, the corner portions 133a to 133d of the memory card 135 can be cut.

  That is, in the laser cutting unit 100 of the present embodiment, when cutting the four corner portions 133a to 133d of one memory card area 135, the substrate 120 is not moved in the X-axis direction and the Y-axis direction, and laser light is emitted. Scan.

  In this embodiment, a YAG laser (for example, wavelength: 1.06 μm) is used as the laser light source 111. Further, in this embodiment, when cutting the substrate 120 with the resin coating on the printed circuit board, the wavelength of the laser light is made constant and the resin portion (package resin layer described later) is cut and the printed circuit board portion (described later). The pulse irradiation frequency (Q switch frequency), current value, cutting speed, and the like of the laser light are changed depending on when the printed circuit board layer is cut. In this embodiment, laser cutting is performed without placing the substrate 120 in a gas atmosphere. This simplifies the configuration of the laser cutting unit 100 and, unlike laser cutting in a gas atmosphere where it is difficult to perform operations other than straight cutting, deformed line portions such as curves are scanned by laser light (one memory). The four corner portions 133a to 133d of the card area 135 can be cut (without moving the substrate 120).

  As described above, one memory card area 135 on the substrate 120 has four corner portions 133a to 133d. In the laser cutting unit 100 of the present embodiment, a predetermined amount (a small amount) of the four corner portions 133a to 133d is cut, that is, a circular scan of the laser beam is sequentially performed. Cut completely.

  Specifically, for example, the corner portion 133a is first cut with a laser beam by an amount corresponding to 1/10 of the thickness of the substrate 120, and then the corner portion 133b is cut by the same amount. Subsequently, the same amount is cut in the order of the corner portions 133c and 133d, and this is the one cutting cycle. By repeating the same cutting cycle 10 times, cutting of the four corner portions 133a to 133d by the laser light is completed.

  In this way, by cutting each corner portion a plurality of times and cutting a small amount, the finish of the cut surface becomes better than when cutting once.

  Moreover, after a small amount of cutting is performed on one corner portion, the corner portion to be cut is sequentially changed such that a small amount of cutting is performed on the next corner portion. This is because when a small amount of cutting of the same corner portion is continuously performed, the quality of the cut surface of the corner portion deteriorates due to processing heat. For this reason, in the present embodiment, by giving a cooling time to each of the four corner portions for each small amount of cutting, the cut surface of each corner portion can be made high quality.

  In addition, although the case where each corner portion was cut in 10 times was described here, this is only an example, and the number of times other than 10 times such as 5 times or 20 times may be used. Further, the cutting amount in each cycle may be the same or different.

  When the cutting of each corner portion of the first memory card area 135 is completed, the movable stage is moved so that the center of the next (second) memory card area 135 is positioned on the central axis LO of the laser oscillator 110. To drive. Then, the four corner portions 133a to 133d of the second memory card area 135 are cut in the above-described procedure. Thus, as shown in FIG. 6, the corner portions 133 a to 133 d of the memory card area 135 on the substrate 120 are cut. Note that the degree of coincidence between the center of the memory card area 135 and the center axis LO of the laser oscillator 110 is not limited to being completely coincident, but includes cases where it can be assumed that they coincide within an allowable range.

  In FIG. 1, the semiconductor substrate 120 ′ after the cutting of the corner portions of all the memory card areas 135 is completed by the third transport mechanism (not shown) from the second position II (movable stage) to the third position on the base 101. Take out to III. In the third position III, processing waste such as soot adhering to the substrate 120 ′ by laser cutting is removed by a cleaning mechanism (not shown). Then, the cleaned substrate 120 ′ is stored in the second substrate magazine 103 from the third position III by a fourth transport mechanism (not shown).

  The substrate 120 ′ accommodated in the second substrate magazine 103 is taken out to a fourth position IV on the base 202 of the blade cutting unit 200 by a fifth transport mechanism (not shown), and further, by a sixth transport mechanism (not shown). , And conveyed to the fifth position V on the base 202.

  A movable stage (not shown) is provided at the fifth position V, and the substrate 120 ′ conveyed on the movable stage is placed on the movable stage by the negative pressure suction of the lower surface of each memory card area 135. Fixed.

  The blade cutting unit 200 is provided with two cutting blade units 201. Each cutting blade unit 201 includes a motor 201b and a cutting blade 201a such as a diamond blade attached to the output shaft of the motor 201b.

  By moving the movable stage in the Y direction in FIG. 1 while rotating the two cutting blades 201a, two second linear portions 132 on the substrate 120 ′ are cut at a time. By repeating this cutting and the X-direction shift of the substrate 120 ′ (movable stage), all the second straight portions 132 are cut. FIG. 4 shows how the substrate 120 ′ (one straight line portion) is cut at a time by the cutting blade 201a.

  Further, by rotating the movable stage by 90 degrees and moving it in the Y direction, the first straight portions 131 on the substrate 120 ′ are simultaneously cut two by two, and this cutting and shifting of the substrate 120 ′ (movable stage) in the X direction are performed. By repeating the above, all the first straight portions 131 are cut. FIG. 7 shows the substrate 120 ″ after the cutting of all the straight portions 131 and 132 is completed.

  The substrate 120 ″ is transported from the fifth position V (movable stage) to the sixth position VI on the base 202 by a seventh transport mechanism (not shown), where dirt such as processing waste due to blade cutting is cleaned. And after cleaning, it is transported to the seventh position VII on the base 202 by an eighth transport mechanism (not shown).

  A rotation table 205 is provided at the seventh position VII, and each memory card 135 ′ (see FIG. 7) separated from the substrate 120 ″ is conveyed onto the rotation table 205 by the ninth conveyance mechanism 206. Then, each memory card 135 ′ moved to the eighth position VIII by the rotation of the rotary table 205 is picked up by the tenth transport mechanism 207 and stored on the storage tray 210.

  The cutting of the straight portions 131 and 132 by the cutting blade 201a is performed at a high speed, and the cut surface has a smooth finish. Therefore, the memory card 135 ′ finally cut out by the cutting system of this embodiment can be used as it is as a memory card product without being covered with a member such as a cover or a cap.

  When the memory card is inserted into an electronic device such as a digital camera or a mobile phone, the end surface of the straight line portion serves as an insertion guide surface, and thus the end surface is required to have a smooth finish. In addition, it is desirable that the corner portion that is often touched by the user has a curved shape rather than an angular shape. In this embodiment, a memory card satisfying such a requirement can be cut at a high speed.

  In this embodiment, the corner portions 133 a to 133 d of the planned cutting line 130 of the substrate 120 are first cut by the laser cutting unit 100, and then the straight portions 131 and 132 are cut by the blade cutting unit 200. Thus, the substrate 120 ′, which has been cut by the laser cutting unit 100, can be transported to the blade cutting unit 200 while maintaining the shape of the substrate, which is advantageous in that handling is easy.

  When the straight portions 131 and 132 are first cut by the blade cutting unit 200, small and separated substrate pieces (individual pieces) are conveyed from the blade cutting unit 200 to the laser cutting unit 100, or small substrate pieces. On the other hand, the corner portions 133a to 133d are cut, and handling and positioning during laser cutting become difficult. However, this does not mean that in the present invention, cutting with a laser beam is performed after cutting with a cutting blade.

  8A and 8B show details of the cutting process in the laser cutting unit 100 in the present embodiment. As described above, in this embodiment, the movable stage is set so that the center of each memory card area 135 coincides with the central axis LO of the laser oscillator 110 (the scanning center of the laser light L by the galvanometer mirrors 113 and 114). And the substrate 120 is positioned. Then, the laser beam L is scanned along the corner portions 133a to 133d of the memory card area 135.

  Here, as shown in FIG. 9, if the laser beam L is scanned in a state where the straight line portion 132 (or 131) between the two memory card areas 135 is coincident with the center of the laser oscillator 110, X from the scanning center is obtained. The irradiation angle θ of the laser beam L scanned in the direction (or Y direction) with respect to the substrate 120 is increased, and the inclination of the cut surface of the corner portion is increased.

  Further, as shown in FIG. 10, if the laser beam L is irradiated only directly below the center of the laser oscillator 110 without being scanned, and the substrate 120 is moved in the XY directions by the movable stage, the laser beam is always obtained. The irradiation angle θ with respect to the substrate 120 of L is 90 °, and the cut surface of the corner portion is not inclined. However, in this method, since the movable stage having a large weight needs to be moved or the position of the movable stage needs to be accurately controlled, the processing speed is slower than that in the case of scanning with laser light.

  For this reason, in this embodiment, as shown in FIG. 8A, the laser beam L is scanned after positioning the substrate 120 so that the center of each memory card area 135 coincides with the center of the laser oscillator 110. As a result, the irradiation angle θ of the laser beam L scanned in the X direction (or Y direction) from the scanning center is closer to 90 ° than in the case shown in FIG. 9, and the inclination of the cut surface is also reduced. In addition, as shown in FIG. 10, the cutting process can be performed at a higher speed than in the case of cutting while moving the substrate 120 in the XY directions.

  In this way, in this embodiment, the reduction in the inclination of the cut surfaces of the corner portions 133a to 133d of each memory card area 135 is compatible with the speeding up of the cutting process.

  8B has a larger distance (height) H from the laser oscillator 110 to the substrate 120 than FIG. 8A. In this case, the intensity of the laser beam L is larger than that in the case of FIG. 8A, but the irradiation angle θ of the laser beam L to the substrate 120 is closer to 90 ° than in FIG. 8A, and the inclination of the cut surface is smaller. can do. In this embodiment, the height H from the laser oscillator 110 to the substrate 120 can be arbitrarily selected according to the output of the laser light, the allowable inclination of the cut surface, the required quality of the cut surface, and the like.

  In the present embodiment, a case where the substrate 120 is cut with the laser beam in a state where the center of the memory card area 135 and the central axis (axis passing through the scanning center of the laser beam) LO of the laser oscillator 110 coincide with each other will be described. When the shape of the semiconductor device region is complicated and the center cannot be simply determined, the scanning center of the laser beam may be positioned above a position inside the planned cutting line, such as the center of gravity of the semiconductor device region.

  Further, the present invention does not exclude the case where the laser cutting of the substrate 120 is performed in a state where the center of the memory card area 135 is shifted from the central axis LO of the laser oscillator 110 as shown in FIGS. Absent.

  Here, the relationship between the roughness of the cut surface and the output of the laser beam will be described. 13 and 14 show a case where the substrate 120 is completely cut by one laser light irradiation. In order to completely cut the substrate 120 by one laser beam irradiation, the output of the laser beam L needs to be set large. In this case, as shown in FIG. 13, the width of the cut groove 120a formed by melting by the laser beam L is increased, and the cut surface 120b is roughened as shown in FIG. In addition, as the output of the laser oscillator increases, the laser oscillator and the laser cutting unit (laser cutting device) 100 increase in size and cost.

  On the other hand, in the present embodiment, as shown in FIGS. 11 and 12, the substrate 120 is cut into a plurality of times with a smaller laser light output than in the case of FIGS. 13 and 14 (that is, divided cutting). I do). As a result, as shown in FIG. 11, the width of the cutting groove 120a is reduced as compared with the case shown in FIG. 13, and the cut surface 120b is smoothed as shown in FIG. 12 as compared with the case shown in FIG. The quality of the cut surface 120b is improved. Furthermore, as described above, the four corner portions 133a to 133d are divided by a predetermined depth and cut, whereby the quality of the cut surface can be further improved.

  Further, FIGS. 15 and 16 show a more specific method of dividing and cutting the substrate 120 by the laser cutting unit 100 of the present embodiment.

  In FIGS. 15 and 16, reference numeral 121 denotes a printed circuit board layer (first layer) made of glass epoxy or the like that forms the upper layer of the substrate 120. Reference numeral 122 denotes a package resin layer (second layer) formed of a resin such as plastic that forms the lower layer of the substrate 120.

  In FIG. 15, the parameters such as the output of the laser beam L, the wavelength, and the Q switch frequency are made constant, and the printed circuit board layer 121 and the package resin layer 122 are divided into a plurality of times and divided and cut at a predetermined cutting depth. It shows a state. In this case, the parameters (Q switch frequency: 40 kHz, for example) suitable for cutting the upper glass epoxy printed circuit board layer 121 are set.

  On the other hand, in FIG. 16, the printed circuit board layer 121 and the package resin layer 122 are moved a plurality of times by changing the Q switch frequency while keeping the output and wavelength of the laser light L constant between the printed circuit board layer 121 and the package resin layer 122. It shows a state in which divided cutting is performed by a predetermined depth. In this case, for example, the Q switch frequency is set to 40 kHz when the printed circuit board layer 121 is cut, and the Q switch frequency is set to 15 kHz when the package resin layer 122 is cut.

  On the other hand, FIG. 17 shows an example in which the substrate 120 is cut by one laser beam irradiation. In this case, the cutting speed is faster than that in the case of split cutting, but the cut surfaces of the printed circuit board layer 121 and the package resin layer 122 are both roughened, and in particular, the cut surface 122b of the package resin layer 122 is extremely roughened.

  FIG. 18A and FIG. 18B schematically show experimental results when the printed circuit board layer 121 having a thickness of 0.2 mm is cut by irradiation with laser light 10 times at a high frequency (40 kHz) (cutting speed 500 m / s). Yes. FIG. 19A and FIG. 19B schematically show experimental results when the same printed circuit board layer 121 is cut by laser light irradiation 10 times at a low frequency (15 kHz) (cutting speed 500 m / s). 18A and 19A are plan views, and FIGS. 18B and 19B are cross-sectional views.

  When a high frequency was used, the cut surface 121b of the cut groove 121a formed in the printed circuit board layer 121 was finished more smoothly than when a low frequency was used. Further, when a high frequency was used, the width of the cutting groove 121a was narrower than when a low frequency was used. However, even when a low frequency was used, by cutting into 10 times, a good cut surface and a narrow cut groove width were obtained compared to the case of cutting once as shown in FIG.

  The package resin layer (thickness 0.7 mm) 122 is not shown, but when it is cut into 10 times using a low frequency (15 kHz), it is divided into 10 times using a high frequency. Compared to the case of cutting, it finished smoothly. In addition, the width of the cut groove was narrower when the low frequency was used than when the high frequency was used. The cutting speed is 500 m / s.

  From this, it is preferable to use a low frequency (second frequency) for the package resin layer 122 and a high frequency (first frequency higher than the second frequency) for the printed circuit board layer 121. I understood. In addition, when the package resin layer and the printed circuit board layer were cut into 25 times each and when cut into 10 times, a better cut surface was obtained 10 times. For this reason, it has been found that the number of divisions is preferably 10 times or a number in the vicinity thereof.

  However, the above is one experimental example, and the present invention is not limited by the result of this experimental example. Actually, depending on the material of the printed circuit board layer 121 and the package resin layer 122, that is, for each layer, parameters such as the Q switch frequency and output of the laser light are changed, or the number of divisions for cutting (laser light It is desirable to change the number of scans). In this case, one layer may be cut by one laser beam scanning. Thereby, about each layer, the quality of a cut surface and cutting ability (cutting speed etc.) can be optimized.

  The above-described procedure for dividing and cutting the substrate 120 is collectively shown in the flowchart of FIG. This divided cutting process is executed according to a computer program stored in the controllers 150 and 250.

  In step (abbreviated as “S” in the figure) 1, the substrates 120 are transferred one by one from the first substrate magazine 102 shown in FIG. 1 to the first to second positions I to II in the laser cutting unit 100, and moved to the movable stage. Adsorb. Then, the movable stage is moved so that the center of the first memory card area 135 in the substrate 120 is aligned with the laser light irradiation center position (position on the central axis LO of the laser oscillator 110).

  In Step 2, a Q switch frequency (QF = High: 40 kHz, for example) suitable for the printed circuit board layer 121 is set, and laser light is applied to the planned cutting lines 133 (corner portions 133a to 133d) of the printed circuit board layer 121.

  Next, in step 3, it is determined whether or not the number of times of laser light irradiation (counter value) C1 performed in step 2 is N1 (for example, 10 times).

  In step 4, the number of times C1 of laser beam irradiation is incremented by 1, and in step 2, laser beam irradiation is performed again.

  Then, Steps 2 to 4 are repeated. When the number of times of laser light irradiation C1 reaches N1 in Step 3, the process proceeds to Step 5.

  In Step 5, a Q switch frequency (QF = Low: 15 kHz, for example) suitable for the package resin layer 122 is set, and laser light is irradiated to the planned cutting lines 133 (corner portions 133a to 133d) of the package resin layer 122.

  Next, in step 6, it is determined whether or not the number of times of laser beam irradiation (counter value) C2 performed in step 5 is N2 (for example, 5 times).

  In step 7, the number of times of laser beam irradiation C2 is incremented by 1, and in step 5, laser beam irradiation is performed again.

  Then, Steps 5 to 7 are repeated, and when the number of times of laser light irradiation C2 reaches N2 in Step 6, the process proceeds to Step 8.

  In step 8, whether the number of memory card areas (counter value) D that has been subjected to laser cutting processing has reached the number M of all memory card areas formed on the substrate 120 (for example, 12 shown in FIGS. 5 and 6). Determine whether or not. If D has not yet reached M, the process proceeds to step 9, and the movable stage is driven so that the center of the next memory card area matches the laser beam irradiation center position. Then, steps 2 to 7 are repeated.

  In step 8, when D reaches M, that is, when laser cutting of the corner portions of all the memory card areas is completed, the process proceeds to step 10.

  In step 10, the substrate 120 ′ is transferred from the third position III to the fifth position V through the fourth position IV in the blade cutting unit 200. In step 11, the predetermined cutting line 133 (the plurality of horizontal and vertical straight portions 131 and 132) of the substrate 120 ′ is cut.

  When the cutting of all the straight portions 131 and 132 is completed, the process proceeds to step 12 where each memory card 135 ′ is transported to the sixth to eighth positions VI to VIII, and finally stored on the storage tray 210.

  In FIG. 21, the structure of the semiconductor cutting system which is Example 2 of this invention is shown. In the system of the first embodiment (FIG. 1), the case where the laser cutting unit 100 and the blade cutting unit 200 are configured by combining different devices has been described. However, this embodiment is configured as one apparatus having both the laser cutting unit 100 and the blade cutting unit 200.

  In FIG. 21, elements common to the first embodiment (FIG. 1) are denoted by the same reference numerals as those of the first embodiment and are not described.

  In this embodiment, a laser oscillator 110 and two cutting blade units 201 are provided on a base 101.

  The substrate cutting method and procedure in this embodiment are the same as those in the first embodiment.

  In FIG. 22, the structure of the semiconductor cutting system which is Example 3 of this invention is shown. In the systems shown in the first embodiment (FIG. 1) and the second embodiment (FIG. 21), the blade portion 200 is cut at the straight portion after the corner portion is cut at the laser cutting portion 100. On the other hand, in this embodiment, the straight line portion is first cut by the blade cutting unit 200, and then the corner portion of the separated memory card area is cut by the laser cutting unit 100.

  In FIG. 22, elements common to the first and second embodiments are denoted by the same reference numerals as those of the first and second embodiments, and are not described. Further, in the present embodiment, a case where the apparatus is configured as one apparatus in which the two blade cutting units 201 and the laser oscillator 110 are provided on the base 101 is illustrated. The cutting unit 200 and the laser cutting unit 100 may be configured as separate devices.

  In this embodiment, steps 10 to 11 shown in FIG. 20 are performed first, and then steps 1 to 9 are performed.

  In each of the above-described embodiments, the case where the deformed line portion cut by the laser beam has a ¼ arc shape has been described. However, the deformed line portion may have a shape as illustrated in FIGS. 23A and 23B. .

  FIG. 23A shows a deformed line portion 133 ′ having a staircase shape formed by combining discontinuous straight lines. FIG. 23B shows a deformed line portion 133 ″ having a shape obtained by combining discontinuous straight lines and curves.

  And the semiconductor cutting system of this invention is applicable also to the cutting | disconnection of the deformed line part which has shapes other than these.

  Furthermore, in each of the above-described embodiments, the case where each semiconductor device is cut out by combining cutting with a cutting blade and cutting with a laser beam has been described. However, the present invention can also be applied to the case where each semiconductor device is cut out from the semiconductor substrate only by scanning with a laser beam. In this case, the semiconductor device is divided into individual pieces by performing laser beam circumferential scanning a plurality of times along the annular (endless) scheduled cutting line shown in FIG. Even in this case, as described in the above embodiment, the quality of the cut surface can be made good, and inconvenience due to heat can be avoided. Also in this case, it is desirable to change the parameters of the laser beam and the number of scans for each layer of the semiconductor substrate.

  It is possible to provide a semiconductor cutting device capable of cutting a semiconductor substrate at a high speed so that a plurality of semiconductor devices can be separated.

The top view which shows the structure of the semiconductor cutting system which is Example 1 of this invention. FIG. 3 is a front view of a laser oscillator provided in a laser cutting unit according to the first embodiment. FIG. 3 is a schematic diagram illustrating a configuration of a laser transmitter in the first embodiment. The side view which shows the mode of the board | substrate cutting in the blade cutting part in Example 1. FIG. FIG. 3 is a plan view showing a memory card substrate and a planned cutting line in the first embodiment. FIG. 3 is a plan view showing a memory card substrate with a corner portion cut in the first embodiment. FIG. 3 is a plan view showing the memory card substrate and the separated memory card in which the straight line portion is cut in the first embodiment. FIG. 3 is a front view showing a state of laser cutting of a substrate in Example 1. FIG. 3 is a front view showing a state of laser cutting of a substrate in Example 1. FIG. 3 is a front view showing a state of laser cutting of a substrate different from that in the first embodiment. FIG. 3 is a front view showing a state of laser cutting of a substrate different from that in the first embodiment. FIG. 3 is a front view showing a cutting groove in laser division cutting of a substrate in Example 1. FIG. 3 is an enlarged view showing a cutting groove in laser division cutting of a substrate in Example 1. The front view which shows the cutting groove in the laser batch cutting of a board | substrate. The enlarged view which shows the cutting groove in the laser batch cutting of a board | substrate. The enlarged view which shows the mode of the laser division | segmentation cutting | disconnection of the package resin layer and printed circuit board layer in Example 1. FIG. The enlarged view which shows the mode of the laser division | segmentation cutting | disconnection of the package resin layer and printed circuit board layer in Example 1. FIG. The enlarged view which shows the mode of the laser batch cutting of a package resin layer and a printed circuit board layer. The plane enlarged view which shows the cutting result of the board | substrate with a high Q switch frequency. The cross-sectional enlarged view which shows the cutting result of the board | substrate with a high Q switch frequency. The plane enlarged view which shows the cutting result of the board | substrate with a low Q switch frequency. The cross-sectional enlarged view which shows the cutting result of the board | substrate with a low Q switch frequency. 5 is a flowchart illustrating a procedure of substrate cutting processing according to the first embodiment. The top view which shows the structure of the semiconductor cutting system which is Example 2 of this invention. The top view which shows the structure of the semiconductor cutting system which is Example 3 of this invention. The plane enlarged view which shows the shape of the scheduled cutting line in Example 4 of this invention. The plane enlarged view which shows the other shape of the scheduled cutting line in Example 4 of this invention.

DESCRIPTION OF SYMBOLS 100 Laser cutting part 110 Laser oscillator 111 Laser light source 113,114 Galvano mirror 120,120 'Memory card board 121 Package resin layer 122 Printed circuit board layer 130 Planned cutting line 131,132 Straight line part 133a-133d, 133', 133 "Corner part (Deformed wire part)
135 Memory Card Area 135 ′ Memory Card 200 Blade Cutting Section 201 Cutting Blade Unit L Laser Light

Claims (3)

A semiconductor cutting device for cutting a plurality of semiconductor devices by cutting one semiconductor substrate along a predetermined cutting line,
Laser oscillation means for outputting laser light and scanning the laser light;
A driving means having a cutting blade and driving the cutting blade;
The laser oscillation means is controlled to scan a laser beam along a part of a predetermined cutting line of the semiconductor substrate, and the part different from the part of the predetermined cutting line is cut by the cutting blade. Control means for controlling the drive means ,
The semiconductor substrate is provided with a plurality of semiconductor device regions each surrounded by the predetermined cutting line, and the semiconductor substrate has a printed board layer and a package resin layer made of different materials,
The planned cutting line is composed of a plurality of first portions having a linear shape and a plurality of second portions having a deformed line shape different from the linear shape,
Wherein, among the planned cutting line provided for said plurality of semiconductor devices area, prior to cutting the first portion by using the cutting blade, the second using the laser beam Controlling the laser oscillation means to cut the portion of
In the cutting of the second portion, the control means makes the frequency of the laser light applied to the printed circuit board layer higher than the frequency of the laser light applied to the package resin layer, and the printed circuit board layer The semiconductor cutting apparatus is characterized in that the number of scans of the laser beam with respect to is different from the number of scans of the laser beam with respect to the package resin layer.   In the cutting of the plurality of second portions provided for each of the semiconductor device regions, the control means performs cutting at a predetermined depth on one of the second portions with respect to the plurality of second portions. The semiconductor cutting apparatus according to claim 1, wherein the laser beam is scanned so as to be sequentially and multiple times. Having a moving means for relatively moving the semiconductor substrate and the laser oscillation means;
The control means controls the moving means so that a scanning center of the laser light by the laser oscillating means is positioned above a position inside the planned cutting line of each semiconductor device region. The semiconductor cutting device according to claim 1 or 2.