JP5249979B2 - Method of processing brittle material substrate and laser processing apparatus used therefor - Google Patents

Method of processing brittle material substrate and laser processing apparatus used therefor Download PDF

Info

Publication number
JP5249979B2
JP5249979B2 JP2010062143A JP2010062143A JP5249979B2 JP 5249979 B2 JP5249979 B2 JP 5249979B2 JP 2010062143 A JP2010062143 A JP 2010062143A JP 2010062143 A JP2010062143 A JP 2010062143A JP 5249979 B2 JP5249979 B2 JP 5249979B2
Authority
JP
Japan
Prior art keywords
substrate
cooling
crack
brittle material
roller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010062143A
Other languages
Japanese (ja)
Other versions
JP2011194644A (en
Inventor
淳史 井村
裕介 平内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsuboshi Diamond Industrial Co Ltd
Original Assignee
Mitsuboshi Diamond Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Industrial Co Ltd filed Critical Mitsuboshi Diamond Industrial Co Ltd
Priority to JP2010062143A priority Critical patent/JP5249979B2/en
Priority to TW100108060A priority patent/TWI454330B/en
Priority to KR1020110022714A priority patent/KR101275539B1/en
Priority to CN201110069608.6A priority patent/CN102218778B/en
Publication of JP2011194644A publication Critical patent/JP2011194644A/en
Application granted granted Critical
Publication of JP5249979B2 publication Critical patent/JP5249979B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033—Apparatus for opening score lines in glass sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/08—Severing cooled glass by fusing, i.e. by melting through the glass
    • C03B33/082—Severing cooled glass by fusing, i.e. by melting through the glass using a focussed radiation beam, e.g. laser
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Description

本発明は、ガラス、シリコン、セラミック、半導体等の脆性材料基板に対し、分断予定ラインに沿ってレーザ光を照射して局所加熱し、続いて冷媒を噴射して局所冷却することにより当該基板に亀裂を形成する加工方法に関する。ここでいう「加工」は、加熱と冷却により基板に熱応力分布を発生させて当該基板に亀裂を形成する加工をいうが、形成される亀裂が基板表面から裏面に達するようにして完全分断させる場合とともに、分断予定ラインに深い亀裂（基板厚さの８０％以上の亀裂）を形成して完全分断の直前状態にするような加工も含まれる。   In the present invention, a brittle material substrate such as glass, silicon, ceramic, or semiconductor is locally heated by irradiating a laser beam along a line to be divided, and then locally cooled by jetting a coolant. The present invention relates to a processing method for forming a crack. “Processing” as used herein refers to processing that generates a thermal stress distribution in a substrate by heating and cooling to form a crack in the substrate, but is completely divided so that the formed crack reaches the back surface from the substrate surface. In some cases, a process of forming a deep crack (crack of 80% or more of the substrate thickness) in the line to be cut to a state immediately before complete cutting is included.

従来、脆性材料であるガラス基板を分断（割断）する方法として、例えば特許文献１並びに特許文献２で開示されているように、基板を局所的に加熱及び冷却し、その際に生じる熱応力（圧縮応力並びに引張応力）によって、あらかじめ基板の端部に形成してある初期亀裂（トリガ）を起点にして亀裂を所望の方向に進展させて、基板にスクライブラインを形成したり、完全分断（板厚が極端に薄いときなど）したりする加工方法が知られている。   Conventionally, as a method of dividing (cleaving) a glass substrate which is a brittle material, as disclosed in Patent Document 1 and Patent Document 2, for example, the substrate is locally heated and cooled, and thermal stress ( By using the initial crack (trigger) formed in advance at the edge of the substrate as a starting point, the crack is propagated in the desired direction by compressive stress and tensile stress) to form a scribe line on the substrate, There is a known processing method that is used when the thickness is extremely thin.

具体的には、熱源としてレーザビームを使用し、テーブル上に保持させた基板をレーザビームに対して相対的に移動することでレーザビームを基板の分断予定ラインに沿って局所的に照射して加熱するとともに、これに追従して冷却ユニットのノズルから冷媒を噴射する。このとき加熱によって生じる圧縮応力と、急冷によって生じる引張応力による応力分布を利用して、亀裂を分断予定ラインの方向に進展させ、一筋のスクライブラインを形成する。   Specifically, a laser beam is used as a heat source, and the substrate held on the table is moved relative to the laser beam to locally irradiate the laser beam along the planned dividing line of the substrate. While heating, following this, a refrigerant is injected from the nozzle of the cooling unit. At this time, using the compressive stress generated by heating and the stress distribution due to the tensile stress generated by rapid cooling, the crack is propagated in the direction of the planned split line to form a single scribe line.

そして、基板が極端に薄い場合等で完全分断されてしまう場合を除き、スクライブライン（亀裂）に沿って、ブレイクバーを押し当てたり、ローラを圧接転動したりすることによって基板を撓ませることで基板を分断するようにしている。   Except when the substrate is extremely thin, etc., the substrate is bent by pressing the break bar or rolling the roller against the scribe line (crack). In this way, the substrate is divided.

特開２００４−１８２５３０号公報JP 2004-182530 A 特開２００５−２６３５７８号公報JP 2005-263578 A

しかし、上述した従来方法では、加熱、冷却を行った後に、外力を与えて基板を撓ませて分断するときに、分断されて形成された端面同士が互いに押圧してしまい、精度よく分断予定ラインに沿って分断することができないことがあった。また、分断面が粗雑になるといった問題点もあった。   However, in the above-described conventional method, after heating and cooling, when an external force is applied to bend and divide the substrate, the divided end surfaces are pressed against each other, and the line to be divided is accurately obtained. In some cases, it could not be divided along. In addition, there is a problem that the sectional surface becomes rough.

そこで本発明は、本課題を解決し、分断予定ラインに沿って精度よく分断することのできる基板の分断方法を提供することを目的とする。   Accordingly, an object of the present invention is to solve this problem and to provide a method for dividing a substrate that can be accurately divided along a planned division line.

上記課題を検討する上で、発明者の反復実験により、分断されて形成された端面同士が互いに押圧するのは、以下の点が要因となっていることがわかった。図６は、局所加熱後に、加熱部分に追従して、冷媒を噴射して冷却した直後の基板の状態を示す断面図である。なお、説明の便宜上、亀裂等を誇張して図示している。   In examining the above-mentioned problems, it has been found by the inventor's iterative experiments that the end faces formed by being divided are pressed against each other due to the following points. FIG. 6 is a cross-sectional view showing a state of the substrate immediately after the local heating and following the heated portion and immediately after jetting and cooling the coolant. For convenience of explanation, cracks and the like are exaggerated.

基板Ｗをレーザビームによって局所的に加熱した後、この加熱部分を冷却装置のノズル１３からの冷媒によって急冷すると、引張応力が発生する。この引張応力によって、図６（ａ）に示すように亀裂１１が発生する。この亀裂の開口部は冷媒が噴射される冷却ポイントから離れるにしたがって、やがて閉じ、図６（ｂ）に示すように目視で見ることができないブラインドクラック１２となる。ブラインドクラックは、冷却によって引張応力が生じている領域が、時間経過により温度が緩和して再び表面温度が上昇したときに、圧縮応力に変わるようになり、亀裂面が圧縮されて亀裂が閉じていると考えられる。このようなブラインドブラック（一度発生した亀裂の開口部が再び閉じて目視で見えなくなっているが内部に亀裂が残っている状態）が生じている状態で、外力を印加して基板を撓ませてブレイクを行うと、亀裂の開口部に圧縮応力が残留して閉じているので大きな外力を必要とし、無理に分断しようとすると分断されて形成された端面同士が互いに押圧してしまうと考えられる。この圧縮応力が、精度よく分断予定ラインに沿って分断できなくなる場合の要因となっている。   After the substrate W is locally heated by the laser beam, when this heated portion is rapidly cooled by the refrigerant from the nozzle 13 of the cooling device, tensile stress is generated. Due to this tensile stress, a crack 11 is generated as shown in FIG. The opening of the crack closes as the distance from the cooling point at which the refrigerant is injected, and becomes a blind crack 12 that cannot be seen with eyes as shown in FIG. A blind crack is a region in which tensile stress is generated by cooling. When the temperature relaxes over time and the surface temperature rises again, it changes to compressive stress, and the crack surface is compressed and the crack is closed. It is thought that there is. In such a state of blind black (a state where the crack opening once generated is closed again and cannot be seen visually but a crack remains inside), an external force is applied to bend the substrate. When a break is performed, a compressive stress remains in the opening portion of the crack and is closed, so that a large external force is required. This compressive stress is a factor in the case where it becomes impossible to cut along the line to be cut with high accuracy.

したがって、上記目的を達成するために本発明では次のような技術的手段を講じた。即ち、本発明の基板加工方法では、脆性材料基板の分断予定ラインに沿ってレーザビームを相対的に移動させながら照射することによって加熱し基板に局所的な圧縮応力を生じさせる加熱工程と、加熱された領域の直後に冷媒を噴射して形成した冷却領域をレーザビームに追従して移動させながら脆性材料基板を局所冷却することによって引張応力を生じさせ分断予定ラインに沿って亀裂を進展させる冷却工程と、この引張応力が残留して亀裂の開口部が開いている間に、この亀裂の開口部が生じている領域に対して外力を印加して亀裂を厚さ方向に浸透させるブレイク工程とからなるようにしている。   Therefore, in order to achieve the above object, the present invention takes the following technical means. That is, according to the substrate processing method of the present invention, a heating step of generating a local compressive stress on the substrate by heating while irradiating the laser beam while moving relatively along the line to be cut of the brittle material substrate, and heating Cooling in which a brittle material substrate is locally cooled while moving a cooling region formed by injecting a refrigerant immediately after the formed region to follow the laser beam, thereby generating tensile stress and causing cracks to propagate along the planned dividing line And a breaking process in which an external force is applied to a region where the crack opening is generated while the tensile stress remains and the crack opening is opened, and the crack penetrates in the thickness direction. Is made up of.

ここで、ブレイク工程における外力を印加させる位置は、冷却工程による冷却領域の冷却中心から冷却領域の移動方向後方側へ２０ｍｍ、並びに、冷却領域の移動方向前方側へ５ｍｍの範囲に配置するのがよい。特に、冷却によって生じた亀裂の開口部が最大に開いている位置が最も好ましく、基板の冷却中心（ｃｐ）から冷却領域の移動方向と反対方向となる後方へ向けて０ｍｍ〜１０ｍｍの範囲の位置が適切である。
また、上記目的を達成するためになされた本発明のレーザ加工装置は、テーブル上に載置された脆性材料基板の分断予定ラインに沿って前記基板の上方からレーザビームを相対的に移動させながら照射することによって加熱して基板に局所的な圧縮応力を生じさせるレーザ照射機構と、加熱された領域の直後に冷媒を噴射して形成した冷却領域をレーザビームに追従するように移動させて脆性材料基板を局所冷却することによって引張応力を生じさせ分断予定ラインに沿って亀裂を進展させる冷却機構とを備えたレーザ加工装置であって、前記テーブルは前記基板の分割予定ラインの下面側を露出させるための間隙を挟んで両側に分割され、冷媒の噴射によって生じた引張応力が残留して亀裂の開口部が開いている間に、この亀裂の開口部が生じている領域に対して、前記基板の下方から外力を印加して亀裂を厚さ方向に浸透させるブレイク機構を備えるようにしている。
Here, the position where the external force is applied in the break process is arranged within the range of 20 mm from the cooling center of the cooling region in the cooling step to the rear side in the moving direction of the cooling region and 5 mm to the front side in the moving direction of the cooling region. Good. In particular, the position where the opening portion of the crack generated by cooling is opened to the maximum is most preferable, and the position is in the range of 0 mm to 10 mm from the cooling center (cp) of the substrate toward the rear in the direction opposite to the moving direction of the cooling region. Is appropriate.
Further, the laser processing apparatus of the present invention made to achieve the above object is configured to relatively move the laser beam from above the substrate along the planned cutting line of the brittle material substrate placed on the table. A laser irradiation mechanism that heats up by irradiation and generates local compressive stress on the substrate, and a cooling region formed by injecting a refrigerant immediately after the heated region moves to follow the laser beam and is brittle A laser processing apparatus including a cooling mechanism that generates a tensile stress by locally cooling a material substrate and causes a crack to propagate along a planned dividing line, wherein the table exposes a lower surface side of the planned dividing line of the substrate While the crack opening is opened while the tensile stress generated by the injection of the refrigerant remains and the crack opening is opened, the crack opening is divided. Flip respect to that area, so that provided a break mechanism to penetrate by applying an external force from the lower side of the substrate cracks in a thickness direction.

本発明の加工方法によれば、ブレイク工程での外力を印加する位置を、冷却工程による急激な冷却によって生じた亀裂がブラインドクラックにならないで、亀裂の開口部が開いている領域内にしているので、外力を少し与えるだけで、即ち、亀裂の開口部が開いている領域を外力で少し撓ませるだけで、無理なく亀裂を浸透させて分断することができる。これにより、従来のような、分断されて形成された端面同士が互いに押圧するような現象をなくすることができて、分断予定ラインに沿って精度よく分断することができるとともに、滑らかで、きれいな加工面を得ることができるといった効果がある。   According to the processing method of the present invention, the position where the external force is applied in the breaking process is set in the region where the crack opening caused by the rapid cooling in the cooling process does not become a blind crack and the opening of the crack is open. Therefore, the crack can be easily penetrated and divided by simply applying a little external force, that is, by slightly bending the region where the opening of the crack is opened by the external force. As a result, it is possible to eliminate the phenomenon in which the end surfaces formed by being divided are pressed against each other as in the prior art, and can be accurately divided along the planned dividing line, and are smooth and clean. There is an effect that a processed surface can be obtained.

本発明において、ブレイク工程における外力の印加手段として基板に圧接するローラを使用し、このローラを基板のレーザビーム照射面とは反対側に配置して、ローラを押し当てることにより外力を印加するようにするのがよい。
これにより、亀裂の開口部が開いている領域を的確に撓ませることができ、無理なく亀裂を浸透させて分断することができる。 In the present invention, a roller that presses against the substrate is used as an external force application means in the breaking process, and this roller is disposed on the side opposite to the laser beam irradiation surface of the substrate, and the external force is applied by pressing the roller. It is good to make it.
Thereby, the area | region in which the opening part of a crack is open can be bent appropriately, and a crack can be penetrate | infiltrated reasonably and can be divided.

本発明にかかる加工方法を実施するためのレーザ加工装置の一例を示す斜視図である。It is a perspective view which shows an example of the laser processing apparatus for enforcing the processing method concerning this invention. 本発明にかかる加工方法を説明するための図である。It is a figure for demonstrating the processing method concerning this invention. 本発明における加工時の熱応力の発生状態を示す拡大断面図であって、圧縮応力が生じている状態を示す。It is an expanded sectional view showing the generation state of the thermal stress at the time of processing in the present invention, and shows the state where compressive stress has arisen. 本発明における加工時の熱応力の発生状態を示す拡大断面図であって、引張応力が生じている状態を示す。It is an expanded sectional view showing the generation state of the thermal stress at the time of processing in the present invention, and shows the state where tensile stress has arisen. 外力が印加されている状態を示す拡大断面図である。It is an expanded sectional view showing the state where an external force is applied. レーザ加熱後に、冷媒を噴射して冷却した直後の基板の状態を示す断面図である。It is sectional drawing which shows the state of the board | substrate just after injecting a refrigerant | coolant and cooling after laser heating.

以下、本発明にかかる加工方法の詳細を、その実施の形態を示す図面に基づいて詳細に説明する。
図１は本発明にかかる加工方法を実施するためのレーザ加工装置の一例を示す概略的な斜視図であり、図２は加工方法を説明するための図である。
レーザ加工装置は、ガラス基板Ｗを載置するための二分割されたテーブル１を備えている。テーブル１は、基板Ｗを載置するための平らな上面２を有しており、上面２には多数のエア吸引孔３が設けられている。このエア吸引孔３は、載置される基板Ｗを吸引保持するためのものであって、テーブル１の内部に設けられたマニホールド（不図示）を介してエア吸引ポンプ（不図示）に連通されている。さらに、テーブル１に載置された基板Ｗを、吸盤４を介して持ち上げて搬送させるための搬送ロボット５が設けられている。 Hereinafter, the details of the processing method according to the present invention will be described in detail with reference to the drawings showing embodiments thereof.
FIG. 1 is a schematic perspective view showing an example of a laser processing apparatus for carrying out the processing method according to the present invention, and FIG. 2 is a diagram for explaining the processing method.
The laser processing apparatus includes a table 1 that is divided into two parts for placing a glass substrate W thereon. The table 1 has a flat upper surface 2 on which the substrate W is placed, and a plurality of air suction holes 3 are provided on the upper surface 2. The air suction hole 3 is for sucking and holding the substrate W to be placed, and is communicated with an air suction pump (not shown) via a manifold (not shown) provided inside the table 1. ing. Further, a transport robot 5 is provided for lifting and transporting the substrate W placed on the table 1 through the suction cup 4.

また、テーブル１上に載置された基板Ｗを、分断予定ラインに沿って加工するために、基板Ｗに局所的な圧縮応力を生じさせる加熱手段としてのレーザ照射機構６と、このレーザ照射機構６による加熱領域（レーザスポット）に追従して、加熱領域の直後を冷媒噴射により冷却することによって引張応力を生じさせ、亀裂を分断予定ラインに沿って進展させる冷却機構７と、この引張応力が残留している間に、冷却領域近傍（亀裂の開口部が生じている領域）に対して外力を印加して亀裂を厚み方向に浸透させるブレイク機構８とが設けられている。   Further, in order to process the substrate W placed on the table 1 along the line to be cut, a laser irradiation mechanism 6 as a heating unit that generates local compressive stress on the substrate W, and the laser irradiation mechanism The cooling mechanism 7 that follows the heating region (laser spot) by 6 and generates a tensile stress by cooling the portion immediately after the heating region by refrigerant injection, and propagates the crack along the planned dividing line. A break mechanism 8 is provided that applies an external force to the vicinity of the cooling region (the region in which the opening of the crack is generated) while remaining, to penetrate the crack in the thickness direction.

冷却機構７は、先端から冷媒を噴射するノズル７ａを備えている。また、ブレイク機構８は、基板Ｗの下方側に配置されたローラ８ａを備えており、このローラ８ａを分割されたテーブル１の間隙で、下から押圧させることにより基板Ｗを押圧して分断するようになっている。なお、ローラ８ａに相対して、基板Ｗの上方側に凹面状の周面を有する受けローラ８ｂを配設しておくのが好ましい。   The cooling mechanism 7 includes a nozzle 7a that ejects refrigerant from the tip. The break mechanism 8 includes a roller 8a disposed on the lower side of the substrate W, and the substrate W is pressed and divided by pressing the roller 8a from below through the gap of the divided table 1. It is like that. In addition, it is preferable that a receiving roller 8b having a concave peripheral surface is disposed on the upper side of the substrate W in relation to the roller 8a.

レーザ照射機構６、冷却機構７、ブレイク機構８は、レーザ照射機構６を先頭として順次一直線上に配列されて共通の保持部材９により保持されており、駆動機構（不図示）によって、基板Ｗを載せたテーブル１に対して相対的に配列方向に沿って移動できるように形成されている。   The laser irradiation mechanism 6, the cooling mechanism 7, and the break mechanism 8 are sequentially arranged in a straight line with the laser irradiation mechanism 6 at the head and are held by a common holding member 9, and the substrate W is held by a driving mechanism (not shown). It is formed so that it can move along the arrangement direction relative to the mounted table 1.

ブレイク機構８のローラ８ａは、ノズル７ａからの冷媒噴射による急激な冷却によって生じた亀裂１０（図４参照）がブラインドクラックにならないで、亀裂の開口部が開いている領域に配置される。
具体的には、加工すべきガラス基板Ｗの厚みが０．４ｍｍ〜１．１ｍｍ程度、基板Ｗの送り速度が５０ｍｍ／秒〜５００ｍｍ／秒としたときに、ノズル７ａによる冷却ポイントの中心ｃｐ（図２）からノズル７ａの基板Ｗに対する移動方向（矢印方向）と反対方向である後方側の２０ｍｍ並びに移動方向前方側５ｍｍの範囲にローラ８ａが配置される。
特に、冷却によって生じた亀裂の開口部が大きく開いている位置が最も好ましく、冷却ポイントの中心ｃｐ（図２）からノズル７ａの基板Ｗに対する移動方向とは反対方向の後方側に向けて０ｍｍ〜１０ｍｍの範囲内の位置が適切である。ちなみに、従来はスクライブとブレイクとは別工程で行うべきとの考えがあり、ローラブレイクを行う場合には、なるべく振動を与えない方がよいと考え、また基板Ｗが十分に冷却されて亀裂が基板の厚さ方向に進展しきった後にブレイク工程を設ける方がよいと考え、十分に冷媒噴射位置から離れた位置（冷却中心ｃｐから後方側に向けて２０ｍｍ以上離隔）にローラが配置されるようにしていた。
なお、ローラ８ａを冷却ポイントの中心ｃｐからノズル７ａの基板Ｗに対する移動方向前方側に５ｍｍより離れた位置に配置した場合には、亀裂を浸透させる効果が見られなかった。 The roller 8a of the break mechanism 8 is disposed in a region where the crack 10 (see FIG. 4) generated by the rapid cooling by the refrigerant injection from the nozzle 7a does not become a blind crack and the opening of the crack is open.
Specifically, when the thickness of the glass substrate W to be processed is about 0.4 mm to 1.1 mm and the feed speed of the substrate W is 50 mm / second to 500 mm / second, the center cp ( The roller 8a is arranged in a range of 20 mm on the rear side which is opposite to the moving direction (arrow direction) of the nozzle 7a with respect to the substrate W from FIG.
In particular, the position where the opening portion of the crack generated by cooling is widely opened is most preferable, and 0 mm to the rear side in the direction opposite to the moving direction of the nozzle 7a relative to the substrate W from the center cp (FIG. 2) of the cooling point. A position within the range of 10 mm is appropriate. By the way, there is a conventional idea that scribing and breaking should be performed in separate processes, and when performing roller breaking, it is better not to give vibration as much as possible, and the substrate W is sufficiently cooled and cracked. I think that it is better to provide a break process after it has progressed in the thickness direction of the substrate, so that the roller is disposed at a position sufficiently separated from the refrigerant injection position (at least 20 mm away from the cooling center cp toward the rear side). I was doing.
In addition, when the roller 8a was disposed at a position separated from the center cp of the cooling point by 5 mm on the front side in the movement direction with respect to the substrate W of the nozzle 7a, the effect of permeating cracks was not seen.

次に、加工動作について説明する。基板Ｗを分断予定ラインＬに沿って加工するに際して、基板Ｗの分断予定ラインＬがレーザ加工装置における所定の加工位置にくるように位置合わせしながらテーブル１に保持させる。そして、レーザ照射機構６（保持部材９）を分断予定ラインＬに沿って相対的に移動させながら基板Ｗにレーザビームを照射することにより、図３に示すように、基板Ｗに局所的な圧縮応力の場Ｐ１を生じさせる。次いで、図４に示すように、レーザビームに追従させてレーザビームにより加熱された領域の直後（したがって、Ｐ１は少し基板内部に移動する）を、冷却機構７のノズル７ａからの冷媒噴射により急冷して引張応力Ｐ２を生じさせる。   Next, the machining operation will be described. When the substrate W is processed along the planned cutting line L, the substrate W is held on the table 1 while being aligned so that the planned cutting line L of the substrate W is at a predetermined processing position in the laser processing apparatus. Then, the substrate W is irradiated with the laser beam while relatively moving the laser irradiation mechanism 6 (holding member 9) along the planned division line L, thereby locally compressing the substrate W as shown in FIG. A stress field P1 is generated. Next, as shown in FIG. 4, immediately after the region heated by the laser beam following the laser beam (and thus P1 moves slightly inside the substrate), the coolant is rapidly cooled by jetting the refrigerant from the nozzle 7a of the cooling mechanism 7. Thus, the tensile stress P2 is generated.

これにより亀裂１０が分断予定ラインＬ（図１）に沿って形成される。さらに図５に示すように、ブレイク機構８のローラ８ａを上昇させて、冷却工程によって亀裂１０の生じている領域を撓ませて、亀裂深さを板厚の１００％（完全分断）から８０％まで浸透させる。
このとき、ブレイク機構８のローラ８ａの圧接位置が、ノズル７ａによる急激な冷却によって生じた亀裂１０がブラインドクラックにならないで、亀裂１０の開口部が開いている領域にしてあるので、ローラ８ａを少し押圧させるだけで、即ち、亀裂１０の開口部が開いている領域をローラ８ａで少し撓ませるだけで、無理なく亀裂を浸透させることができる。これにより、分断されて形成された端面同士が互いに押圧するような現象をなくすことができ、分断予定ラインに沿って精度よく分断することができるとともに、滑らかで、きれいな分断面を得ることができる。 Thereby, the crack 10 is formed along the dividing line L (FIG. 1). Further, as shown in FIG. 5, the roller 8a of the break mechanism 8 is raised, the region where the crack 10 is generated is bent by the cooling process, and the crack depth is changed from 100% (completely divided) to 80% of the plate thickness. Infiltrate until.
At this time, the pressure contact position of the roller 8a of the break mechanism 8 is a region where the crack 10 generated by the rapid cooling by the nozzle 7a does not become a blind crack and the opening of the crack 10 is open. The crack can be penetrated without difficulty by only slightly pressing, that is, by slightly bending the region where the opening of the crack 10 is opened by the roller 8a. Thereby, it is possible to eliminate a phenomenon in which the end surfaces formed by being divided are pressed against each other, and can be accurately divided along the planned dividing line, and a smooth and clean divided section can be obtained. .

以上本発明の代表的な実施例について説明したが、本発明は必ずしも上記の実施形態に特定されるものでなく、その目的を達成し、請求の範囲を逸脱しない範囲内で適宜修正、変更することが可能である。   Although typical examples of the present invention have been described above, the present invention is not necessarily limited to the above-described embodiments. The present invention achieves its purpose and appropriately modifies and changes within the scope of the claims. It is possible.

本発明の加工方法は、ガラス基板等の脆性材料からなる基板を加工するのに利用することができる。   The processing method of the present invention can be used to process a substrate made of a brittle material such as a glass substrate.

Ｗ 基板
Ｌ 分断予定ライン
１ テーブル
６ レーザ照射機構
７ 冷却機構
７ａ ノズル
８ ブレイク機構
８ａ ローラ
１０ 亀裂 W Substrate L Line to be cut 1 Table 6 Laser irradiation mechanism 7 Cooling mechanism 7a Nozzle 8 Break mechanism 8a Roller 10 Crack

Claims (5)

脆性材料基板の分断予定ラインに沿ってレーザビームを相対的に移動させながら照射することによって加熱し基板に局所的な圧縮応力を生じさせる加熱工程と、
加熱された領域の直後に冷媒を噴射して形成した冷却領域をレーザビームに追従して移動させながら脆性材料基板を局所冷却することによって引張応力を生じさせ分断予定ラインに沿って亀裂を進展させる冷却工程と、
前記基板に外力を印加して亀裂を厚さ方向に浸透させるブレイク工程とからなる脆性材料基板の加工方法において、
前記ブレイク工程における外力を印加させる位置は、前記冷却領域の範囲内であって、かつ、前記冷却領域の冷却中心から冷却領域の移動方向後方側へ２０ｍｍ、冷却領域の移動方向前方側へ５ｍｍの範囲内であることを特徴とする脆性材料基板の加工方法。 A heating step of generating a local compressive stress in the substrate by heating by irradiating while moving the laser beam relatively along the planned cutting line of the brittle material substrate;
A brittle material substrate is locally cooled while moving a cooling region formed by jetting a refrigerant immediately after the heated region while following the laser beam, thereby causing a tensile stress and causing a crack to propagate along the planned cutting line. A cooling process;
In the processing method of the brittle material substrate comprising a breaking step of applying an external force to the substrate to penetrate the crack in the thickness direction,
Position for applying an external force in the breaking process is within the range of the cooling zone, and, 20 mm in the moving direction rearward side of the cooling center or al cold却領region of the cooling area, the moving direction front side of the cooling area A method for processing a brittle material substrate , which is within a range of 5 mm. 前記ブレイク工程でローラを使用し、このローラを基板のレーザ照射面とは反対側に配置して、ローラを圧接することにより外力を印加するようにした請求項１に記載の脆性材料基板の加工方法。 2. The processing of a brittle material substrate according to claim 1, wherein a roller is used in the breaking step, the roller is disposed on the side opposite to the laser irradiation surface of the substrate, and an external force is applied by pressing the roller. Method. テーブル上に載置された脆性材料基板の分断予定ラインに沿って前記基板の上方からレーザビームを相対的に移動させながら照射することによって加熱して基板に局所的な圧縮応力を生じさせるレーザ照射機構と、
加熱された領域の直後に冷媒を噴射して形成した冷却領域をレーザビームに追従するように移動させて脆性材料基板を局所冷却することによって引張応力を生じさせ分断予定ラインに沿って亀裂を進展させる冷却機構とを備え、
前記テーブルは前記基板の分割予定ラインの下面側を露出させるための間隙を挟んで両側に分割され、前記基板の下方から前記基板に外力を印加して亀裂を厚さ方向に浸透させるブレイク機構を備えたレーザ加工装置であって、
前記冷却機構は冷媒を噴射するノズルを有し、冷媒が噴射される冷却領域の範囲内であって、かつ、前記冷却領域の冷却中心からノズルの基板に対する移動方向と反対側である後方側２０ｍｍ、移動方向前方側５ｍｍの範囲内に前記ブレイク機構が配置されることを特徴とするレーザ加工装置。 Laser irradiation that heats and generates local compressive stress on the substrate by irradiating it while moving the laser beam relatively from above the substrate along the planned cutting line of the brittle material substrate placed on the table Mechanism,
A cooling region formed by jetting a refrigerant immediately after the heated region is moved so as to follow the laser beam to locally cool the brittle material substrate, thereby generating a tensile stress and causing a crack to propagate along the planned dividing line. And a cooling mechanism
The table is divided into both sides with a gap for exposing the lower surface side of the division line of the substrate, and a break mechanism that applies an external force to the substrate from below the substrate to penetrate the crack in the thickness direction. A laser processing apparatus comprising:
The cooling mechanism has a nozzle for injecting a refrigerant, and is within a range of a cooling area in which the refrigerant is injected , and a rear side of 20 mm from the cooling center of the cooling area opposite to the moving direction of the nozzle with respect to the substrate. The laser processing apparatus is characterized in that the break mechanism is disposed within a range of 5 mm on the front side in the moving direction. 前記ブレイク機構は、前記テーブルに対し、前記間隙に沿って相対的に移動しながら基板の分割予定ラインの下面を押圧するローラからなる請求項３に記載のレーザ加工装置。 The laser processing apparatus according to claim 3, wherein the break mechanism includes a roller that presses a lower surface of a line to be divided of the substrate while moving relative to the table along the gap. 前記ブレイク機構は、前記ローラに相対する前記基板の上方の位置に凹面状の周面を有する受けローラをさらに備えた請求項４に記載のレーザ加工装置。 The laser processing apparatus according to claim 4, wherein the break mechanism further includes a receiving roller having a concave peripheral surface at a position above the substrate facing the roller.
JP2010062143A 2010-03-18 2010-03-18 Method of processing brittle material substrate and laser processing apparatus used therefor Active JP5249979B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010062143A JP5249979B2 (en) 2010-03-18 2010-03-18 Method of processing brittle material substrate and laser processing apparatus used therefor
TW100108060A TWI454330B (en) 2010-03-18 2011-03-10 A method for processing a brittle material substrate and a laser processing apparatus for use in the method
KR1020110022714A KR101275539B1 (en) 2010-03-18 2011-03-15 Processing method for brittle material substrate and processing apparatus used therein
CN201110069608.6A CN102218778B (en) 2010-03-18 2011-03-18 Processing method of brittle material substrate and laser processing device applied in the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010062143A JP5249979B2 (en) 2010-03-18 2010-03-18 Method of processing brittle material substrate and laser processing apparatus used therefor

Publications (2)

Publication Number Publication Date
JP2011194644A JP2011194644A (en) 2011-10-06
JP5249979B2 true JP5249979B2 (en) 2013-07-31

Family

ID=44775611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010062143A Active JP5249979B2 (en) 2010-03-18 2010-03-18 Method of processing brittle material substrate and laser processing apparatus used therefor

Country Status (4)

Country Link
JP (1) JP5249979B2 (en)
KR (1) KR101275539B1 (en)
CN (1) CN102218778B (en)
TW (1) TWI454330B (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102515494B (en) * 2011-12-05 2014-04-09 深圳市华星光电技术有限公司 Cutting device and method of glass substrate
JP6255595B2 (en) 2012-10-12 2018-01-10 株式会社Ihi Cleaving device
JP2014091134A (en) * 2012-11-01 2014-05-19 Ihi Corp Laser processing device
EP2754524B1 (en) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Method of and apparatus for laser based processing of flat substrates being wafer or glass element using a laser beam line
EP2781296B1 (en) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Device and method for cutting out contours from flat substrates using a laser
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US20150165560A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser processing of slots and holes
US10442719B2 (en) 2013-12-17 2019-10-15 Corning Incorporated Edge chamfering methods
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
CN103896483B (en) * 2014-03-27 2016-08-17 深圳市华星光电技术有限公司 A kind of glass substrate cutting equipment and cutting method
US9815144B2 (en) 2014-07-08 2017-11-14 Corning Incorporated Methods and apparatuses for laser processing materials
CN208586209U (en) 2014-07-14 2019-03-08 康宁股份有限公司 A kind of system for forming multiple defects of restriction profile in workpiece
TWI659793B (en) 2014-07-14 2019-05-21 美商康寧公司 Systems and methods for processing transparent materials using adjustable laser beam focal lines
WO2016010943A2 (en) 2014-07-14 2016-01-21 Corning Incorporated Method and system for arresting crack propagation
JP6788571B2 (en) 2014-07-14 2020-11-25 コーニング インコーポレイテッド Interface blocks, systems and methods for cutting transparent substrates within a wavelength range using such interface blocks.
KR101659454B1 (en) * 2014-08-21 2016-09-23 한국미쯔보시다이아몬드공업(주) Breaking apparatus for substrate
WO2016115017A1 (en) 2015-01-12 2016-07-21 Corning Incorporated Laser cutting of thermally tempered substrates using the multi photon absorption method
KR102546692B1 (en) 2015-03-24 2023-06-22 코닝 인코포레이티드 Laser Cutting and Processing of Display Glass Compositions
JP2018516215A (en) 2015-03-27 2018-06-21 コーニング インコーポレイテッド Gas permeable window and manufacturing method thereof
JP2019532908A (en) 2016-08-30 2019-11-14 コーニング インコーポレイテッド Laser cutting of materials with an intensity mapping optical system
US10730783B2 (en) 2016-09-30 2020-08-04 Corning Incorporated Apparatuses and methods for laser processing transparent workpieces using non-axisymmetric beam spots
KR102428350B1 (en) 2016-10-24 2022-08-02 코닝 인코포레이티드 Substrate processing station for laser-based machining of sheet-like glass substrates
US10752534B2 (en) 2016-11-01 2020-08-25 Corning Incorporated Apparatuses and methods for laser processing laminate workpiece stacks
JP2018183838A (en) * 2017-04-26 2018-11-22 川崎重工業株式会社 Brittle material fragmentation device and brittle material fragmentation method
FR3066488B1 (en) * 2017-05-19 2022-03-04 Saint Gobain PROCEDURE FOR BREAK-UP OF A SHEET OF GLASS
FR3066487B1 (en) * 2017-05-19 2021-12-10 Saint Gobain PROCESS FOR BREAKING A SHEET OF GLASS
US10626040B2 (en) 2017-06-15 2020-04-21 Corning Incorporated Articles capable of individual singulation
KR102022102B1 (en) * 2017-12-21 2019-09-17 주식회사 넵시스 Cutting Apparatus using Laser Beam
CN108751689A (en) * 2018-07-11 2018-11-06 史千云 A kind of glass cutting equipment effectively improving notch flatness
CN115121747B (en) * 2022-08-25 2022-12-06 泰州俊宇不锈钢材料有限公司 Cutting device for special alloy microwire

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW568809B (en) * 2001-09-21 2004-01-01 Mitsuboshi Diamond Ind Co Ltd Method for scribing substrate of brittle material and scriber
JP4373922B2 (en) * 2002-11-06 2009-11-25 三星ダイヤモンド工業株式会社 Scribe line forming apparatus and scribe line forming method
US20070051769A1 (en) * 2003-04-28 2007-03-08 Mitsuboshi Diamond Industrial Co., Ltd. Brittle substrate cutting system and brittle substrate cutting method
JP4619024B2 (en) * 2004-03-19 2011-01-26 芝浦メカトロニクス株式会社 Brittle material cleaving system and method
JP4818120B2 (en) * 2004-10-13 2011-11-16 三星ダイヤモンド工業株式会社 A scribing method for a brittle material substrate, a scribing apparatus, and a cutting system for the brittle material substrate.
WO2007049668A1 (en) * 2005-10-28 2007-05-03 Mitsuboshi Diamond Industrial Co., Ltd. Method of forming scribe line on substrate of brittle material and scribe line forming apparatus
WO2007142264A1 (en) * 2006-06-08 2007-12-13 Toray Engineering Co., Ltd. Substrate splitting apparatus, substrate splitting method, and split substrate split by using the apparatus or method
JP2010138046A (en) * 2008-12-15 2010-06-24 Japan Steel Works Ltd:The Method and device for working material to be cut
JP5464952B2 (en) * 2009-09-28 2014-04-09 株式会社ナガセインテグレックス Laser processing method

Also Published As

Publication number Publication date
KR20110105343A (en) 2011-09-26
KR101275539B1 (en) 2013-06-17
CN102218778A (en) 2011-10-19
TWI454330B (en) 2014-10-01
CN102218778B (en) 2014-11-05
JP2011194644A (en) 2011-10-06
TW201139025A (en) 2011-11-16

Similar Documents

Publication Publication Date Title
JP5249979B2 (en) Method of processing brittle material substrate and laser processing apparatus used therefor
JP5325209B2 (en) Processing method of brittle material substrate
TWI495623B (en) Methods of forming scribe vents in strengthened glass substrates
JP5750202B1 (en) Method and apparatus for dividing plate material of brittle material
JP5314674B2 (en) Processing method of brittle material substrate
JP6349970B2 (en) Substrate cutting method and substrate cutting apparatus
TW201620844A (en) Dividing method and dividing device
JPWO2007142264A1 (en) Substrate cleaving device, substrate cleaving method, and cleaving substrate cleaved using this device or method
KR20160038821A (en) Breaking method and breaking apparatus
US20150059411A1 (en) Method of separating a glass sheet from a carrier
TW201540680A (en) Breaking method and breaking device
JP2005262727A (en) System and method for splitting brittle material
WO2009128315A1 (en) Method for processing fragile material substrate
JP2006175847A (en) System for cutting brittle material and its method
JP2010173316A (en) Scribing device and scribing method
JP2017014032A (en) Scribe method and scribe device
JP2017014031A (en) Scribe method and scribe device
JP5416386B2 (en) Scribing method for thin glass substrate
JP5443851B2 (en) Scribing method and scribing apparatus for thin glass substrate
TWI519375B (en) Cutting method of work and cutting apparatus for work
JP2011084423A (en) Thermal stress-cutting device and thermal stress-cutting method
JP2017019704A (en) Method and apparatus for cutting hard fragile plate
JP5993684B2 (en) Method for dividing brittle material substrate and scribing apparatus
JP6445863B2 (en) Method and apparatus for dividing plate material of brittle material
JP2011201200A (en) Laser beam machining method of brittle material substrate

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120214

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120409

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121023

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130117

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20130128

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130319

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130412

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160419

Year of fee payment: 3