JP4982751B2 - 赤外ガラス蛍光体及び半導体発光素子で構成した光干渉断層撮影装置用光源。 - Google Patents
赤外ガラス蛍光体及び半導体発光素子で構成した光干渉断層撮影装置用光源。 Download PDFInfo
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- JP4982751B2 JP4982751B2 JP2007017260A JP2007017260A JP4982751B2 JP 4982751 B2 JP4982751 B2 JP 4982751B2 JP 2007017260 A JP2007017260 A JP 2007017260A JP 2007017260 A JP2007017260 A JP 2007017260A JP 4982751 B2 JP4982751 B2 JP 4982751B2
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- 光干渉断層撮影装置用光源において、
青緑色の励起光を発光する半導体発光素子と、
前記半導体発光素子の発光面に配置され、Yb 2 O 3 粉末と、Bi 2 O 3 粉末と、H 3 BO 3 粉末とを溶融させた後、急冷して得られたガラスであって、前記励起光の入射により、スペクトルが、前記励起光のスペクトルの半値幅よりも広い半値幅を有し、ガウシアン類似形状を有し、中心波長が近赤外領域に位置する光を放射するガラス蛍光体と、
を有し、
生体における光干渉断層撮影に用いられる
ことを特徴とする光干渉断層撮影装置用光源。 - 光干渉断層撮影装置用光源において、
青緑色の励起光を発光する半導体発光素子と、
前記半導体発光素子の発光面に配置され、Yb 2 O 3 粉末と、Nd 2 O 3 粉末と、Bi 2 O 3 粉末と、H 3 BO 3 粉末とを溶融させた後、急冷して得られたガラスであって、前記励起光の入射により、スペクトルが、前記励起光のスペクトルの半値幅よりも広い半値幅を有し、ガウシアン類似形状を有し、中心波長が近赤外領域に位置する光を放射するガラス蛍光体と、
を有し、
生体における光干渉断層撮影に用いられる
ことを特徴とする光干渉断層撮影装置用光源。 - 前記半導体発光素子は、発光ダイオードであることを特徴とする請求項1 又は請求項2に記載の光干渉断層撮影装置用光源。
- 前記半導体発光素子は、スーパールミネッセントダイオードであることを特徴とする請求項1又は請求項2に記載の光干渉断層撮影装置用光源。
- 前記半導体発光素子は、レーザダイオードであることを特徴とする請求項1 又は請求項2に記載の光干渉断層撮影装置用光源。
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US8405111B2 (en) | 2008-11-13 | 2013-03-26 | National University Corporation Nagoya University | Semiconductor light-emitting device with sealing material including a phosphor |
JP5812461B2 (ja) * | 2010-05-25 | 2015-11-11 | 国立大学法人名古屋大学 | 生体組織検査装置及び検査方法 |
EP2595206A4 (en) * | 2010-07-12 | 2016-01-13 | Univ Nagoya Nat Univ Corp | BROADBAND INFRARED LIGHT EMITTING DEVICE |
JP6044012B2 (ja) * | 2012-02-13 | 2016-12-14 | 愛知県 | 検出対象部位の検出システム |
WO2014112607A1 (ja) * | 2013-01-21 | 2014-07-24 | 国立大学法人名古屋大学 | 細胞製剤及び細胞の活性を高める方法 |
JP6249476B2 (ja) * | 2013-10-31 | 2017-12-20 | 国立研究開発法人産業技術総合研究所 | 近赤外蓄光性蛍光材料、及び近赤外蓄光性蛍光体、並びに近赤外蓄光性蛍光材料の製造方法 |
JP6249477B2 (ja) * | 2013-10-31 | 2017-12-20 | 国立研究開発法人産業技術総合研究所 | 応力発光材料、応力発光体、及び、応力発光材料の製造方法 |
US10538679B2 (en) | 2015-03-02 | 2020-01-21 | Mitsui Mining & Smelting Co., Ltd. | Phosphor |
JP6589048B2 (ja) | 2016-03-14 | 2019-10-09 | 三井金属鉱業株式会社 | 蛍光体 |
KR102408688B1 (ko) * | 2020-09-14 | 2022-06-16 | (주)올릭스 | 파장 가변 초광대역 근적외 발광 장치 |
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JP3999437B2 (ja) * | 2000-03-10 | 2007-10-31 | 富士フイルム株式会社 | 光断層画像化装置 |
JP2003243724A (ja) * | 2002-02-14 | 2003-08-29 | Matsushita Electric Works Ltd | 発光装置 |
JP4401264B2 (ja) * | 2004-09-15 | 2010-01-20 | シャープ株式会社 | 蛍光体およびその製造方法ならびに発光装置 |
JP2006213910A (ja) * | 2005-01-06 | 2006-08-17 | Matsushita Electric Ind Co Ltd | 酸窒化物蛍光体及び発光装置 |
JP2006193399A (ja) * | 2005-01-17 | 2006-07-27 | Sumitomo Electric Ind Ltd | 無機光学材料、光源、マイケルソン干渉計、光コヒーレントトモグラフィ装置、及び光増幅器 |
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