JP4778667B2 - Sheet material for underfill, semiconductor chip underfill method, and semiconductor chip mounting method - Google Patents

Sheet material for underfill, semiconductor chip underfill method, and semiconductor chip mounting method Download PDF

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JP4778667B2
JP4778667B2 JP2002531444A JP2002531444A JP4778667B2 JP 4778667 B2 JP4778667 B2 JP 4778667B2 JP 2002531444 A JP2002531444 A JP 2002531444A JP 2002531444 A JP2002531444 A JP 2002531444A JP 4778667 B2 JP4778667 B2 JP 4778667B2
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underfill
wafer
semiconductor chip
resin layer
underfill resin
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JPWO2003003445A1 (en
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弘 小林
秀彦 吉良
克俊 平沢
健二 小八重
則夫 海沼
高豊 山上
ます美 片山
俊二 馬場
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Fujitsu Ltd
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Fujitsu Ltd
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Description

【技術分野】
【０００１】
本発明は、半導体チップに設けられたバンプのバンプ間を埋めるために用いるアンダーフィル用シート材、半導体チップのアンダーフィル方法および半導体チップの実装方法に関する。
【背景技術】
【０００２】
半導体チップを基板（配線基板、パッケージを含む）に実装する場合、半導体チップにバンプを形成し、このバンプを介して半導体チップを基板にフリップチップ実装する方法がある。
この場合、半導体チップの回路面の保護、バンプの腐植防止、チップと基板との接合強度の向上等のため、チップと基板との間に、絶縁材料からなるアンダーフィル樹脂材を充填するようにしている。
この樹脂材の充填は、一般的には、液状の樹脂材をディスペンサーを用いて、個々の半導体チップ毎に充填するようにしている。しかしながら、この方法では、非常に多くの作業時間を要する。またディスペンサーでは樹脂の供給量が不安定であり、未充填個所が残ったり、逆に樹脂のはみ出しが多くなったりする課題がある。
【０００３】
この課題を解決するものとして、例えば、特開平５−５５２７８号公報に示されるように、ウエハにバンプを形成した状態で、シート状に形成したアンダーフィル樹脂材（樹脂層）をバンプが形成されたウエハ面に押し付け、バンプをアンダーフィル樹脂材に埋没させるようにする方法が知られている。これによれば、ウエハの段階で一括してアンダーフィル樹脂材を供給でき、作業効率の大幅な改善ができる。
上記のようにアンダーフィル樹脂材を供給した後、アンダーフィル樹脂材と共にウエハをダイシングし、アンダーフィル樹脂材付きの個片の半導体チップに分離できる。
このように分離した半導体チップを実装基板に実装し、アンダーフィル樹脂材を熱硬化させればよいのである。
【０００４】
また、特開平８−２８８２９３号公報に示される方法では、ウエハにバンプを形成した段階で、バンプの上部が突出するように、ウエハの上面に樹脂封止膜をスピンコートして形成した後、ウエハを個片の半導体チップに切断、分離するようにしている。
【０００５】
また、特開２０００−２９９３３３号公報に示される方法では、バンプが形成されたウエハ面に封止用樹脂シートを載置し、加熱下で、ウエハと封止用樹脂シートとを貼り合わせ、その後ウエハを個片の半導体チップに切断、分離するようにしている。
【０００６】
さらに、特開２０００−１９５９０１号公報に示される方法では、樹脂層が形成された支持フイルムを樹脂層がウエハ表面と接触するように熱圧着し、次いで樹脂層を光硬化し、支持フイルムを剥離した後、ウエハを個片の半導体チップに切断、分離するようにしている。
【発明の概要】
【発明が解決しようとする課題】
【０００７】
しかしながら、例えば、上記特開平５−５５２７８号公報に示される方法では、図２０〜図２２に示す工程によらなければならない。
すなわち、まず、図２０に示すように、剥離シート１０上に形成されたアンダーフィル樹脂層１２を、バンプ１３が形成されたウエハ１４の面に押し付けてアンダーフィル樹脂層１２にバンプ１３を埋没させ、剥離シート１０を剥離して、アンダーフィル樹脂材付きのウエハ１４（図２１）を得る。
このウエハ１４をダイシングするために、公知の、接着剤付きのダイシングフイルム１５上に、ウエハ１４とリングフレーム１６とを固定し（図２２）、リングフレーム１６を介してダイシング装置（図示せず）に装着し、ダイシングフイルム１５を切り込まない状態にウエハ１４をアンダーフィル樹脂層１２と共に個片の半導体チップに切断、分離するのである。
ダイシングフイルム１５は、紫外線を照射することによって、接着剤はその接着力を低下させるので、ダイシングフイルム１５から、個片にした、アンダーフィル樹脂材付きの半導体チップを容易に取り出すことができる。
【０００８】
しかしながら、この工程では、ウエハ１４にアンダーフィル樹脂層１２を押し付けて、アンダーフィル樹脂材付きのウエハ１４を得る工程と、このウエハ１４をダイシングフイルム１５に接着する工程との２段階の別工程が必要となり、工数が増大して、それだけコストの上昇を招くという課題がある。
上記他の３つの従来方法の場合にも、同様に、アンダーフィル樹脂材付きのウエハ１４を得る工程と、このウエハ１４をダイシングフイルム１５に接着する工程との２段階の別工程が必要となるという課題がある。
そこで、本発明は上記課題を解決すべくなされたものであり、その目的とするところは、工数を減じ、コストの低減化が図れる、アンダーフィル用シート材、半導体チップのアンダーフィル方法および半導体チップの実装方法を提供するにある。
【課題を解決するための手段】
【０００９】
本発明に係る半導体チップのアンダーフィル方法では、半導体チップに設けられたバンプ間をアンダーフィル樹脂材で埋める半導体チップのアンダーフィル方法において、ウエハの表面を覆うことのできる大きさのアンダーフィル樹脂層の両面に、該アンダーフィル樹脂層よりも大きく、アンダーフィル樹脂層から剥離可能な剥離シートが積層され、一方の剥離シートの外面に、前記アンダーフィル樹脂層よりも大きく、接着剤が塗布されたダイシングフイルムが該接着剤により貼付されているアンダーフィル用シート材を用い、該アンダーフィル用シート材の前記ダイシングフィルムと前記一方の剥離シートとを剥離すると共に該一方の剥離シートを除去する工程と、該一方の剥離シートが除去された、前記アンダーフィル用シート材の前記アンダーフィル樹脂層側と、剥離された前記ダイシングフィルムの接着剤層側との間に、バンプを前記アンダーフィル樹脂層側に向けてウエハと、該ウエハを囲むリングフレームとを配置する工程と、前記ウエハとリングフレームとを介在させて、前記ダイシングフイルムと他方の剥離シートとを押圧し、ウエハとリングフレームとを前記ダイシングフレームに接着すると共に、ウエハのバンプを前記アンダーフィル樹脂層に埋没させる押圧工程と、前記他方の剥離シートを剥離する剥離工程とを含むことを特徴としている。
このように、本発明では、ウエハへのアンダーフィル樹脂層の積層と、ウエハおよびリングフレームのダイシングフイルムへの接着とを同一の工程で行えるので、工数が減じられ、コストの低減化を図ることができる。また、ウエハのハンドリングも容易となる。
【図面の簡単な説明】
【００１０】
図１は、ダイシングフイルムを剥離した状態のアンダーフィル用シート材の説明図、
図２は、アンダーフィル用シート材から、ダイシングフイルムと剥離シートを剥離した状態の説明図、
図３は、押圧ローラにより、ウエハとアンダーフィル樹脂層とを加圧する工程の説明図、
図４は、リングフレームにウエハが支持された状態を示す説明図、
図５は個片に分離された状態の半導体チップの説明図、
図６は半導体チップを基板に実装する工程の説明図、
図７は基板に半導体チップが実装された状態を示す説明図、
図８は幅広の第１のブレードによるダイシング工程を示す説明図、
図９は幅狭の第２のブレードによるダイシング工程を示す説明図、
図１０は、個片に分離された半導体チップの説明図、
図１１は、図１０の半導体チップを基板に実装した状態の説明図、
図１２は断面Ｖ字状の切刃を有する第１のブレードによるダイシング工程を示す説明図、
図１３は幅狭の第２のブレードによるダイシング工程を示す説明図、
図１４は個片に分離された半導体チップの説明図、
図１５は、図１４の半導体チップを基板に実装した状態の説明図、
図１６は、基板を上側に、半導体チップを下側に配置して実装した状態を示す説明図、
図１７は、基板に凹溝を設けて樹脂溜まりとした状態の説明図、
図１８は、基板に凹部を設けて樹脂溜まりとした状態の説明図、
図１９は、基板に貫通孔を設けて樹脂溜まりとした状態の説明図、
図２０〜図２２は従来技術の説明図であり、
図２０は、ウエハにアンダーフィル樹脂層を積層する工程の説明図、
図２１は、アンダーフィル樹脂層が積層された状態のウエハの説明図、
図２２は、ウエハとリングフレームをダイシングフイルムに接着した状態の説明図である。
【発明を実施するための形態】
【００１１】
実施例
以下本発明の好適な実施例を添付図面に基づいて詳細に説明する。
（第１実施例）
図１は、アンダーフィル用シート材２０を示す。
２１はシート状に形成されたアンダーフィル樹脂層である。このアンダーフィル樹脂層１２の両面に、アンダーフィル樹脂層２１の接着力により、剥離可能な剥離シート２２が積層される。そして、一方の剥離シート２２の外面に、接着剤付きの公知のダイシングフイルム２３がその接着剤により貼付されてアンダーフィル用シート材２０が構成される。
アンダーフィル樹脂層２１は、ウエハの表面を覆うに足りる十分な大きさのものであり、剥離シート２２やダイシングフイルム２３はアンダーフィル樹脂層２１よりも大きなものが用いられる。
アンダーフィル樹脂層２１とダイシングフイルム２３との間に剥離シート２２を介在させるのは、アンダーフィル樹脂層２１とダイシングフイルム２３とが強固に接着して、剥離不能になるのを防止するためである。また、アンダーフィル樹脂層２１の両面がシート材で覆われるので、ゴミ等の異物の付着が防止され、ハンドリングも容易となる。
アンダーフィル樹脂材２１は、熱硬化性樹脂からなる。例えば、エポキシ樹脂にフィラーを６０wt％程度混入し、硬化剤を添加したものが一例として挙げられる。しかし、これに限定されるものではない。厚さは６０μｍ程度が好適である。
剥離シート２２は、例えば、厚さ３０μｍ程度のポリエチレンテレフタレート（ＰＥＴ）のシートを用いることができる。
ダイシングフイルム２３は、貼付されたウエハを支持できる強度を有するシート材、例えば塩化ビニルシートが使用可能である。このダイシングフイルム２３の表面には、接着剤が塗布されており、この接着剤は紫外線照射によりその接着力が弱いものとなるものが使用される。
【００１２】
上記アンダーフィル用シート材２０を用いて、半導体チップにアンダーフィル樹脂層２１を積層するには次のようにする。
まず、図２に示すように、ダイシングフイルム２３を剥離する。また中間の剥離シート２２を剥離し、かつ除去する。これらの作業は、手作業で行ってもよいが、自動機（図示せず）で行える。
自動機中では、剥離されたダイシングフイルム２３と、アンダーフィル樹脂層２１との間に所要の隙間が維持されるように保持される。
次に、図３に示すように、上記の隙間内に、ウエハ２５がバンプ（金のワイヤバンプ）２６をアンダーフィル樹脂層２１方向に向けてアンダーフィル樹脂層２１上に乗るように、また、リングフレーム２７がウエハ２５を囲むようにして挿入される。このウエハ２５とリングフレーム２７の挿入も自動機で行える。
【００１３】
次に、自動機内に配設されている押圧ローラ２８、２８を走行させ、該押圧ローラ２８、２８により、ダイシングフイルム２３と剥離シート２２を介して、ウエハ２５とアンダーフィル樹脂層２１とを押圧する。
これにより、バンプ２６が、アンダーフィル樹脂層２１内に埋没する状態となる。
金のワイヤバンプの場合には、バンプ２６の先端が尖っているので、先端がアンダーフィル樹脂層２１から突出することもあるが、先端は必ずしもアンダーフィル樹脂層２１から突出しないようにしてもよい。
次いで剥離シート２２を剥離する。
【００１４】
上記のようにして、図４に示すように、アンダーフィル樹脂層２１にバンプ２６が埋没した状態のウエハ２５と、リングフレーム２７とをダイシングフイルム２３に接着した状態のものを準備できる。
しかも、ウエハ２５に、アンダーフィル樹脂層２１にバンプ２６が埋没する状態でアンダーフィル樹脂層２１を積層させる工程と、このウエハ２５およびリングフレーム２７をダイシングフイルム２３上に接着する工程とを同時に行うことができ、作業性が大幅に向上し、作業時間も短縮できて、コストの低減化が図れるのである。
上記のように、リングフレーム２７に保持されたウエハ２５を公知のダイシング装置（図示せず）に装着し、アンダーフィル樹脂層２１と共にウエハ２５を切断して個片の半導体チップ３０（図５）に分離する。なお、ダイシングフイルム２３には、浅く、約３０μｍ程度切り込むだけであり、ダイシングフイルム２３は分離しない。
【００１５】
次に、ダイシングフィルム２３に紫外線を照射する。これにより、接着剤の接着力は弱まる。
ダイシングフイルム２３上から、個片に分離された半導体チップ３０を吸着ノズル（図示せず）により吸着して、基板３１上に位置決めして載せ、加圧、加熱することにより、半導体チップ３０を基板３１上に実装できる（図６、図７）。加熱によって、アンダーフィル樹脂材は熱硬化するが、若干はみ出しが生じる。しかし、アンダーフィル樹脂材の供給量は一定しているので、はみ出し量も一定している。
【００１６】
（第２実施例）
図８〜図１１に第２実施例を示す。
本実施例では、ダイシング工程において、まず．比較的幅広の、例えば４０μｍ幅の第１のブレード（図示せず）によりアンダーフィル樹脂層２１側からウエハ２５の厚みの中途部まで切り込み（図８）、次いで、第１のブレードよりも幅の狭い、例えば２５μｍ幅の第２のブレード（図示せず）により、第１のブレードにより形成された溝内を切り込んで、個片の半導体チップ３０に分離するのである（図９）。このようにすることで、周縁部に段差３２が形成された個片の半導体チップに３０が形成される（図１０）。
この半導体チップ３０を上記と同様の方法で、基板３１に実装する。アンダーフィル樹脂材のはみ出しが生じるが、段差３２が樹脂溜まりとなることから、樹脂材のはみ出しを極力少なくできる（図１１）。
【００１７】
（第３実施例）
図１２〜図１５に第３実施例を示す。
本実施例においては、ダイシング工程において、断面Ｖ字状の切刃を有する第１のブレード（図示せず）によりアンダーフィル樹脂層２１側からウエハ２５の厚みの中途部まで切り込んで断面Ｖ字状の溝を形成し（図１２）、次いで、第１のブレードよりも幅の狭い第２のブレードにより、第１のブレードにより形成されたＶ字状の溝内を切り込んで、個片の半導体チップ３０に分離するのである（図１３）。これにより、周縁部に面取り部３３が形成された半導体チップ３０が形成される（図１４）。
この半導体チップ３０を上記と同様の方法で、基板３１に実装する。アンダーフィル樹脂材のはみ出しが生じるが、面取り部３３が樹脂溜まりとなることから、樹脂材のはみ出しを極力少なくできる（図１５）。
【００１８】
（第４実施例）
図１６は、基板３１への半導体チップ３０の実装時、基板３１を上側に、半導体チップ３０を下側にして実装する実施例を示す。
このように半導体チップ３０を下側にすることで、軟化したアンダーフィル樹脂材は、半導体チップ３０の側面を覆うように下方に垂れ下がるので、外方へのアンダーフィル樹脂材のはみ出しをそれだけ少なくできる。
【００１９】
（第５実施例）
図１７は、樹脂のはみ出しを防止する他の実施例を示す。
本実施例では、基板３１の半導体チップ搭載部の周りに、搭載する半導体チップ３０を囲むようにして、凹溝３４を設けている。この凹溝３４が樹脂溜まりとして機能するので、アンダーフィル樹脂材のはみ出しを少なくできる。凹溝３４は、基板３１の配線パターン（図示せず）には至らないように、表層のソルダーレジスト層に浅く設けるとよい。
【００２０】
（第６実施例）
図１８は、半導体チップ３０の搭載部を凹部３５としたものである。この凹部３５自体が樹脂溜まりとして機能する。
【００２１】
（第７実施例）
図１９は、基板３１に貫通孔３６を設けて樹脂溜まりとした実施例を示す。
【発明の効果】
【００２２】
以上のように、本発明に係るアンダーフィル用シート材によれば、アンダーフィル樹脂層とダイシングフイルムとの間に剥離シートを介在させているので、アンダーフィル樹脂層とダイシングフイルムとが強固に接着して、剥離不能になるのを防止でき、また、アンダーフィル樹脂層の両面がシート材で覆われるので、ゴミ等の異物の付着が防止され、ハンドリングも容易となる。
また本発明に係る半導体チップのアンダーフィル方法では、ウエハに、アンダーフィル樹脂層にバンプが埋没する状態でアンダーフィル樹脂層を積層させる工程と、このウエハおよびリングフレームをダイシングフイルム上に接着する工程とを同時に行うことができ、作業性が大幅に向上し、作業時間も短縮できて、コストの低減化が図れるのである。
また、半導体チップに段差部や面取り部からなる樹脂溜まりを、あるいは基板側に凹溝や凹部、貫通孔からなる樹脂溜まりを設ければ、基板に半導体チップを実装した際、アンダーフィル樹脂材のはみ出しを極力防止できて好適である。
【符号の説明】
【００２３】
２０ アンダーフィル用シート材、
２１ アンダーフィル樹脂層、
２２ 剥離シート、
２３ ダイシングフィルム、
２５ ウエハ、
２６ バンプ、
２７ リングフレーム、
２８ 押圧ローラ、
３０ 半導体チップ、
３１ 基板、
３２ 段差、
３３ 面取り部、
３４ 凹溝、
３５ 凹部、
３６ 貫通孔、 【Technical field】
[0001]
The present invention relates to an underfill sheet material used to fill a gap between bumps provided on a semiconductor chip, a semiconductor chip underfill method, and a semiconductor chip mounting method.
[Background]
[0002]
When a semiconductor chip is mounted on a substrate (including a wiring board and a package), there is a method in which bumps are formed on the semiconductor chip and the semiconductor chip is flip-chip mounted on the substrate via the bumps.
In this case, an underfill resin material made of an insulating material is filled between the chip and the substrate in order to protect the circuit surface of the semiconductor chip, prevent humming of the bump, and improve the bonding strength between the chip and the substrate. ing.
In general, the resin material is filled with a liquid resin material for each semiconductor chip using a dispenser. However, this method requires a great deal of work time. Further, in the dispenser, there is a problem that the amount of resin supplied is unstable, and unfilled portions remain, or conversely, the resin overflows.
[0003]
In order to solve this problem, for example, as shown in Japanese Patent Application Laid-Open No. 5-55278, a bump is formed with an underfill resin material (resin layer) formed in a sheet shape in a state where the bump is formed on the wafer. A method is known in which a bump is buried in an underfill resin material by pressing against the wafer surface. According to this, underfill resin material can be supplied collectively at the wafer stage, and work efficiency can be greatly improved.
After supplying the underfill resin material as described above, the wafer can be diced together with the underfill resin material and separated into individual semiconductor chips with the underfill resin material.
The semiconductor chip thus separated is mounted on a mounting substrate, and the underfill resin material is thermally cured.
[0004]
In the method disclosed in JP-A-8-288293, after forming a bump on the wafer, a resin sealing film is formed on the upper surface of the wafer by spin coating so that the upper portion of the bump protrudes. The wafer is cut and separated into individual semiconductor chips.
[0005]
Further, in the method disclosed in Japanese Patent Laid-Open No. 2000-299333, a sealing resin sheet is placed on the wafer surface on which bumps are formed, and the wafer and the sealing resin sheet are bonded together under heating, and then The wafer is cut and separated into individual semiconductor chips.
[0006]
Further, in the method disclosed in Japanese Patent Application Laid-Open No. 2000-195901, the support film on which the resin layer is formed is thermocompression bonded so that the resin layer is in contact with the wafer surface, and then the resin layer is photocured and the support film is peeled off. After that, the wafer is cut and separated into individual semiconductor chips.
SUMMARY OF THE INVENTION
[Problems to be solved by the invention]
[0007]
However, for example, in the method disclosed in Japanese Unexamined Patent Publication No. 5-55278, the steps shown in FIGS.
That is, first, as shown in FIG. 20, the underfill resin layer 12 formed on the release sheet 10 is pressed against the surface of the wafer 14 on which the bumps 13 are formed to bury the bumps 13 in the underfill resin layer 12. Then, the release sheet 10 is peeled to obtain a wafer 14 with an underfill resin material (FIG. 21).
In order to dice the wafer 14, the wafer 14 and the ring frame 16 are fixed on a known dicing film 15 with an adhesive (FIG. 22), and a dicing apparatus (not shown) is interposed via the ring frame 16. The wafer 14 is cut and separated into individual semiconductor chips together with the underfill resin layer 12 in a state where the dicing film 15 is not cut.
When the dicing film 15 is irradiated with ultraviolet rays, the adhesive lowers its adhesive strength, and therefore, the dicing film 15 can be easily taken out from the dicing film 15 as a semiconductor chip with an underfill resin material.
[0008]
However, in this step, the underfill resin layer 12 is pressed against the wafer 14 to obtain a wafer 14 with an underfill resin material, and the wafer 14 is bonded to the dicing film 15 in two separate steps. There is a problem that the number of man-hours increases and the cost increases accordingly.
In the case of the other three conventional methods, similarly, a two-step separate process is required, that is, a process for obtaining the wafer 14 with the underfill resin material and a process for bonding the wafer 14 to the dicing film 15. There is a problem.
Accordingly, the present invention has been made to solve the above-mentioned problems, and the object of the present invention is to provide a sheet material for underfill, a semiconductor chip underfill method, and a semiconductor chip that can reduce the number of steps and reduce the cost. To provide an implementation method.
[Means for Solving the Problems]
[0009]
In an underfill method for a semiconductor chip according to the present invention, an underfill resin layer having a size capable of covering the surface of a wafer in the underfill method for a semiconductor chip in which a space between bumps provided on the semiconductor chip is filled with an underfill resin material. A release sheet that is larger than the underfill resin layer and can be peeled off from the underfill resin layer is laminated on both sides of the sheet, and an adhesive is applied to the outer surface of one release sheet that is larger than the underfill resin layer. Using a sheet material for an underfill to which a dicing film is adhered with the adhesive, peeling the dicing film and the one release sheet of the underfill sheet material, and removing the one release sheet; Before the underfill sheet material from which the one release sheet is removed And the under-fill resin layer side, between the adhesive layer side of the dicing film is peeled off, and the wafer toward the bump to the under-fill resin layer side, placing a ring frame surrounding the wafer, The wafer and the ring frame are interposed, the dicing film and the other release sheet are pressed, the wafer and the ring frame are bonded to the dicing frame, and the wafer bumps are buried in the underfill resin layer. It includes a pressing step and a peeling step for peeling the other release sheet.
As described above, in the present invention, the lamination of the underfill resin layer to the wafer and the bonding of the wafer and the ring frame to the dicing film can be performed in the same process, thereby reducing the man-hours and reducing the cost. Can do. In addition, handling of the wafer becomes easy.
[Brief description of the drawings]
[0010]
FIG. 1 is an explanatory diagram of a sheet material for underfill in a state where a dicing film is peeled off,
FIG. 2 is an explanatory diagram of a state where the dicing film and the release sheet are peeled from the underfill sheet material,
FIG. 3 is an explanatory diagram of a process of pressurizing the wafer and the underfill resin layer with a pressing roller.
FIG. 4 is an explanatory view showing a state in which the wafer is supported on the ring frame.
FIG. 5 is an explanatory view of a semiconductor chip in a state separated into individual pieces,
FIG. 6 is an explanatory diagram of a process of mounting a semiconductor chip on a substrate.
FIG. 7 is an explanatory view showing a state where a semiconductor chip is mounted on a substrate,
FIG. 8 is an explanatory view showing a dicing process using a wide first blade,
FIG. 9 is an explanatory view showing a dicing process by a narrow second blade,
FIG. 10 is an explanatory diagram of a semiconductor chip separated into individual pieces,
11 is an explanatory diagram of a state in which the semiconductor chip of FIG. 10 is mounted on a substrate.
FIG. 12 is an explanatory view showing a dicing process by a first blade having a V-shaped cutting edge,
FIG. 13 is an explanatory view showing a dicing process by a narrow second blade;
FIG. 14 is an explanatory diagram of a semiconductor chip separated into individual pieces,
FIG. 15 is an explanatory diagram of a state where the semiconductor chip of FIG. 14 is mounted on a substrate.
FIG. 16 is an explanatory view showing a state where the substrate is mounted on the upper side and the semiconductor chip is mounted on the lower side,
FIG. 17 is an explanatory diagram of a state where a concave groove is provided on the substrate to form a resin reservoir,
FIG. 18 is an explanatory diagram of a state in which a recess is provided in the substrate to form a resin reservoir,
FIG. 19 is an explanatory diagram of a state in which a through hole is provided in the substrate to form a resin reservoir,
20-22 is explanatory drawing of a prior art,
FIG. 20 is an explanatory diagram of a process of laminating an underfill resin layer on a wafer.
FIG. 21 is an explanatory diagram of a wafer in a state where an underfill resin layer is laminated,
FIG. 22 is an explanatory view showing a state in which the wafer and the ring frame are bonded to the dicing film.
BEST MODE FOR CARRYING OUT THE INVENTION
[0011]
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
(First embodiment)
FIG. 1 shows an underfill sheet material 20.
Reference numeral 21 denotes an underfill resin layer formed in a sheet shape. A peelable release sheet 22 is laminated on both surfaces of the underfill resin layer 12 by the adhesive force of the underfill resin layer 21. And the well-known dicing film 23 with an adhesive agent is affixed on the outer surface of one peeling sheet 22 with the adhesive agent, and the sheet material 20 for underfills is comprised.
The underfill resin layer 21 is large enough to cover the surface of the wafer, and the release sheet 22 and the dicing film 23 are larger than the underfill resin layer 21.
The reason why the release sheet 22 is interposed between the underfill resin layer 21 and the dicing film 23 is to prevent the underfill resin layer 21 and the dicing film 23 from being firmly bonded to each other so as not to be peeled off. . Moreover, since both surfaces of the underfill resin layer 21 are covered with the sheet material, adhesion of foreign matters such as dust is prevented, and handling is facilitated.
The underfill resin material 21 is made of a thermosetting resin. For example, an epoxy resin in which about 60 wt% filler is mixed and a curing agent is added is an example. However, it is not limited to this. The thickness is preferably about 60 μm.
As the release sheet 22, for example, a polyethylene terephthalate (PET) sheet having a thickness of about 30 μm can be used.
As the dicing film 23, a sheet material having a strength capable of supporting the attached wafer, for example, a vinyl chloride sheet can be used. An adhesive is applied to the surface of the dicing film 23, and an adhesive whose adhesive strength is weakened by ultraviolet irradiation is used.
[0012]
The underfill resin layer 21 is stacked on the semiconductor chip using the underfill sheet material 20 as follows.
First, as shown in FIG. 2, the dicing film 23 is peeled off. Further, the intermediate release sheet 22 is peeled off and removed. These operations may be performed manually, but can be performed by an automatic machine (not shown).
In the automatic machine, it is held so that a required gap is maintained between the peeled dicing film 23 and the underfill resin layer 21.
Next, as shown in FIG. 3, the wafer 25 is placed on the underfill resin layer 21 with the bumps (gold wire bumps) 26 facing the underfill resin layer 21 in the gaps, and the ring. The frame 27 is inserted so as to surround the wafer 25. The wafer 25 and the ring frame 27 can be inserted by an automatic machine.
[0013]
Next, the pressing rollers 28 and 28 disposed in the automatic machine are run, and the pressing rollers 28 and 28 press the wafer 25 and the underfill resin layer 21 through the dicing film 23 and the release sheet 22. To do.
As a result, the bumps 26 are buried in the underfill resin layer 21.
In the case of a gold wire bump, the tip of the bump 26 is pointed, and the tip may protrude from the underfill resin layer 21, but the tip may not necessarily protrude from the underfill resin layer 21.
Next, the release sheet 22 is peeled off.
[0014]
As described above, as shown in FIG. 4, a wafer 25 in which the bumps 26 are buried in the underfill resin layer 21 and the ring frame 27 bonded to the dicing film 23 can be prepared.
In addition, the step of laminating the underfill resin layer 21 on the wafer 25 with the bumps 26 buried in the underfill resin layer 21 and the step of bonding the wafer 25 and the ring frame 27 onto the dicing film 23 are simultaneously performed. Therefore, workability is greatly improved, work time can be shortened, and costs can be reduced.
As described above, the wafer 25 held by the ring frame 27 is mounted on a known dicing apparatus (not shown), and the wafer 25 is cut together with the underfill resin layer 21 to obtain individual semiconductor chips 30 (FIG. 5). To separate. It should be noted that the dicing film 23 is shallow and only cut by about 30 μm, and the dicing film 23 is not separated.
[0015]
Next, the dicing film 23 is irradiated with ultraviolet rays. Thereby, the adhesive force of the adhesive is weakened.
The semiconductor chip 30 separated into individual pieces from the dicing film 23 is sucked by a suction nozzle (not shown), positioned and placed on the substrate 31, and the semiconductor chip 30 is placed on the substrate by pressing and heating. 31 (FIGS. 6 and 7). By heating, the underfill resin material is thermoset, but slightly protrudes. However, since the supply amount of the underfill resin material is constant, the amount of protrusion is also constant.
[0016]
(Second embodiment)
8 to 11 show a second embodiment.
In this embodiment, in the dicing process, first, A relatively wide first blade (not shown) having a width of 40 μm, for example, is cut from the underfill resin layer 21 side to the middle portion of the thickness of the wafer 25 (FIG. 8), and then wider than the first blade. A narrow second blade (not shown) having a width of, for example, 25 μm is used to cut the inside of the groove formed by the first blade and separate it into individual semiconductor chips 30 (FIG. 9). In this way, 30 is formed on the individual semiconductor chip having the step 32 formed on the peripheral edge (FIG. 10).
The semiconductor chip 30 is mounted on the substrate 31 by the same method as described above. Although the underfill resin material protrudes, the step 32 becomes a resin pool, so that the protrusion of the resin material can be reduced as much as possible (FIG. 11).
[0017]
(Third embodiment)
A third embodiment is shown in FIGS.
In the present embodiment, in the dicing process, a first blade (not shown) having a cutting edge with a V-shaped section is cut from the underfill resin layer 21 side to the middle of the thickness of the wafer 25 to have a V-shaped section. And then cutting the inside of the V-shaped groove formed by the first blade with a second blade having a width smaller than that of the first blade, thereby obtaining individual semiconductor chips. 30 (FIG. 13). Thereby, the semiconductor chip 30 in which the chamfered portion 33 is formed in the peripheral portion is formed (FIG. 14).
The semiconductor chip 30 is mounted on the substrate 31 by the same method as described above. Although the underfill resin material protrudes, the chamfered portion 33 becomes a resin reservoir, so that the protrusion of the resin material can be reduced as much as possible (FIG. 15).
[0018]
(Fourth embodiment)
FIG. 16 shows an embodiment in which the semiconductor chip 30 is mounted on the substrate 31 with the substrate 31 on the upper side and the semiconductor chip 30 on the lower side.
By lowering the semiconductor chip 30 in this way, the softened underfill resin material hangs downward so as to cover the side surface of the semiconductor chip 30, so that the protrusion of the underfill resin material to the outside can be reduced accordingly. .
[0019]
(5th Example)
FIG. 17 shows another embodiment for preventing the resin from protruding.
In this embodiment, a groove 34 is provided around the semiconductor chip mounting portion of the substrate 31 so as to surround the semiconductor chip 30 to be mounted. Since the concave groove 34 functions as a resin reservoir, the protrusion of the underfill resin material can be reduced. The concave groove 34 is preferably provided shallow in the surface solder resist layer so as not to reach the wiring pattern (not shown) of the substrate 31.
[0020]
(Sixth embodiment)
In FIG. 18, the mounting portion of the semiconductor chip 30 is a recess 35. The recess 35 itself functions as a resin reservoir.
[0021]
(Seventh embodiment)
FIG. 19 shows an embodiment in which a through hole 36 is provided in the substrate 31 to form a resin reservoir.
【The invention's effect】
[0022]
As described above, according to the underfill sheet material of the present invention, since the release sheet is interposed between the underfill resin layer and the dicing film, the underfill resin layer and the dicing film are firmly bonded. Thus, it becomes possible to prevent the peeling from becoming impossible, and since both surfaces of the underfill resin layer are covered with the sheet material, adhesion of foreign matters such as dust is prevented and handling is facilitated.
In the underfill method for a semiconductor chip according to the present invention, a step of laminating an underfill resin layer on a wafer with bumps embedded in the underfill resin layer, and a step of bonding the wafer and the ring frame on a dicing film Thus, workability can be greatly improved, work time can be shortened, and costs can be reduced.
In addition, if the semiconductor chip is provided with a resin reservoir consisting of a stepped portion or a chamfered portion, or a resin reservoir consisting of a concave groove, a concave portion, or a through hole on the substrate side, when the semiconductor chip is mounted on the substrate, the underfill resin material This is preferable because it can prevent protrusion as much as possible.
[Explanation of symbols]
[0023]
20 Sheet material for underfill,
21 Underfill resin layer,
22 release sheet,
23 Dicing film,
25 wafers,
26 Bump,
27 Ring frame,
28 pressure roller,
30 semiconductor chip,
31 substrate,
32 steps,
33 Chamfered part,
34 Groove,
35 recess,
36 through holes,

Claims (6)

半導体チップに設けられたバンプ間を埋めるためのアンダーフィル樹脂層が剥離シート上に形成されたアンダーフィル用シート材において、
ウエハの表面を覆うことのできる大きさの前記アンダーフィル樹脂層の両面に、該アンダーフィル樹脂層よりも大きく、アンダーフィル樹脂層から剥離可能な剥離シートが積層され、一方の剥離シートの外面に、前記アンダーフィル樹脂層よりも大きく、接着剤が塗布されたダイシングフイルムが該接着剤により貼付されていることを特徴とするアンダーフィル用シート材。In the sheet material for underfill in which the underfill resin layer for filling between the bumps provided in the semiconductor chip is formed on the release sheet,
A release sheet that is larger than the underfill resin layer and can be peeled off from the underfill resin layer is laminated on both sides of the underfill resin layer having a size that can cover the surface of the wafer. A sheet material for underfill, characterized in that a dicing film larger than the underfill resin layer and coated with an adhesive is stuck to the adhesive. 半導体チップに設けられたバンプ間をアンダーフィル樹脂材で埋める半導体チップのアンダーフィル方法において、
請求項１記載のアンダーフィル用シート材を用い、該アンダーフィル用シート材のダイシングフィルムと一方の剥離シートとを剥離すると共に該一方の剥離シートを除去する工程と、
該一方の剥離シートが除去された、前記アンダーフィル用シート材のアンダーフィル樹脂層側と、剥離された前記ダイシングフィルムの接着剤層側との間に、バンプを前記アンダーフィル樹脂層側に向けてウエハと、該ウエハを囲むリングフレームとを配置する工程と、
前記ウエハとリングフレームとを介在させて、前記ダイシングフイルムと他方の剥離シートとを押圧し、ウエハとリングフレームとを前記ダイシングフレームに接着すると共に、ウエハのバンプを前記アンダーフィル樹脂層に埋没させる押圧工程と、
前記他方の剥離シートを剥離する剥離工程とを含むことを特徴とする半導体チップのアンダーフィル方法。In the semiconductor chip underfill method of filling the space between the bumps provided on the semiconductor chip with an underfill resin material,
Using the underfill sheet material according to claim 1, the step of peeling the dicing film of the underfill sheet material and one release sheet and removing the one release sheet;
The bump is directed to the underfill resin layer side between the underfill resin layer side of the underfill sheet material from which the one release sheet is removed and the adhesive layer side of the peeled dicing film. Placing the wafer and a ring frame surrounding the wafer;
The wafer and the ring frame are interposed, the dicing film and the other release sheet are pressed, the wafer and the ring frame are bonded to the dicing frame, and the wafer bumps are buried in the underfill resin layer. A pressing step;
A semiconductor chip underfill method, comprising: a peeling step of peeling the other release sheet. 半導体チップを基板にフリップチップ接続し、半導体チップと基板との間の隙間に樹脂材をアンダーフィルする半導体チップの実装方法において、
請求項１記載のアンダーフィル用シート材を用い、該アンダーフィル用シート材のダイシングフィルムと一方の剥離シートとを剥離すると共に該一方の剥離シートを除去する工程と、
該一方の剥離シートが除去された、前記アンダーフィル用シート材のアンダーフィル樹脂層側と、剥離された前記ダイシングフィルムの接着剤層側との間に、バンプを前記アンダーフィル樹脂層側に向けてウエハと、該ウエハを囲むリングフレームとを配置する工程と、
前記ウエハとリングフレームとを介在させて、前記ダイシングフイルムと他方の剥離シートとを押圧し、ウエハとリングフレームとを前記ダイシングフレームに接着すると共に、ウエハのバンプを前記アンダーフィル樹脂層に埋没させる押圧工程と、
前記他方の剥離シートを剥離する剥離工程と、
前記ダイシングフイルムに接着されたウエハを、前記リングフレームを介してダイシング装置に装着し、前記アンダーフィル樹脂層と共にウエハをダイシングして、個片の半導体チップに分離するダイシング工程と、
個片に分離された半導体チップを、基板の端子部に位置合わせして接合すると共に、加熱して前記アンダーフィル樹脂層を硬化させる実装工程とを含むことを特徴とする半導体チップの実装方法。In the semiconductor chip mounting method, the semiconductor chip is flip-chip connected to the substrate, and the resin material is underfilled in the gap between the semiconductor chip and the substrate.
Using the underfill sheet material according to claim 1, the step of peeling the dicing film of the underfill sheet material and one release sheet and removing the one release sheet;
The bump is directed to the underfill resin layer side between the underfill resin layer side of the underfill sheet material from which the one release sheet is removed and the adhesive layer side of the peeled dicing film. Placing the wafer and a ring frame surrounding the wafer;
The wafer and the ring frame are interposed, the dicing film and the other release sheet are pressed, the wafer and the ring frame are bonded to the dicing frame, and the wafer bumps are buried in the underfill resin layer. A pressing step;
A peeling step of peeling the other release sheet;
A wafer bonded to the dicing film is mounted on a dicing device via the ring frame, and the wafer is diced together with the underfill resin layer, and a dicing process for separating the wafer into individual semiconductor chips;
A semiconductor chip mounting method comprising: a mounting step of aligning and bonding the semiconductor chips separated into individual pieces to a terminal portion of a substrate and heating to cure the underfill resin layer. 前記ダイシング工程において、第１のブレードにより前記アンダーフィル樹脂層側からウエハの厚みの中途部まで切り込み、次いで、前記第１のブレードよりも幅の狭い第２のブレードにより、前記第１のブレードにより形成された溝内を切り込んで、周縁部に段差が形成された個片の半導体チップに分離することを特徴とする請求項３記載の半導体チップの実装方法。  In the dicing step, the first blade cuts from the underfill resin layer side to the middle portion of the wafer thickness, and then the second blade having a width narrower than the first blade causes the first blade to 4. The semiconductor chip mounting method according to claim 3, wherein the semiconductor chip is separated into individual semiconductor chips each having a step formed at the peripheral edge by cutting into the formed groove. 前記ダイシング工程において、断面Ｖ字状の切刃を有する第１のブレードにより前記アンダーフィル樹脂層側からウエハの厚みの中途部まで切り込んで断面Ｖ字状の溝を形成し、次いで、前記第１のブレードよりも幅の狭い第２のブレードにより、前記第１のブレードにより形成されたＶ字状の溝内を切り込んで、周縁部に面取り部が形成された個片の半導体チップに分離することを特徴とする請求項３記載の半導体チップの実装方法。  In the dicing step, a first blade having a V-shaped cutting edge is cut from the underfill resin layer side to the middle of the wafer thickness to form a V-shaped groove, and then the first blade A second blade having a width smaller than that of the first blade is cut into a V-shaped groove formed by the first blade and separated into individual semiconductor chips each having a chamfered portion at the peripheral edge. The semiconductor chip mounting method according to claim 3. 前記基板に、流れ出した前記アンダーフィル樹脂部を受け入れる凹状もしくは貫通孔からなる樹脂溜まりを設けた基板を用いることを特徴とする請求項３〜５いずれか１項記載の半導体チップの実装方法。6. The method of mounting a semiconductor chip according to claim 3, wherein a substrate provided with a resin reservoir comprising a concave shape or a through hole for receiving the flowed out underfill resin portion is used on the substrate.
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