JP4682645B2 - Semiconductor device manufacturing method and electronic apparatus - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device and an electronic apparatus, and is suitable for application to, for example, a thin film transistor (TFT) and an electronic apparatus using the thin film transistor.

  As a low-cost and simple patterning technique, a droplet discharge method (inkjet method) has attracted attention. In the droplet discharge method, a thin film having a desired pattern is formed by directly spraying a material onto a processed surface. For example, a colored layer forming process of a color filter used in a color liquid crystal display or an organic EL (Electroluminescence) display (See, for example, Patent Documents 1 and 2).

In addition, as a technique for accurately patterning using a droplet discharge method, a partition wall is provided so as to surround a region where a thin film on a processed surface is to be formed, and a material is filled in a recess inside the partition wall by a droplet discharge method. Thus, a method of forming a pattern has also been proposed (see, for example, Patent Documents 1 and 2).
Japanese Patent Laid-Open No. 9-230129 JP 2002-139614 A

  However, according to this method, it is difficult for the material to diffuse into the corner portion in the concave portion. Therefore, in order to fill the concave portion with a clean material, the concave portion is lyophilic and the outer surface of the partition wall (partition wall It is necessary to perform surface treatment on the upper surface and the outer peripheral surface of the material so as to have liquid repellency.

  Thus, for example, Patent Document 1 proposes that the surface of the recess is made lyophilic by irradiating the surface of the recess that is inside thereof with liquid repellency and then irradiating the surface with the energy rays. . However, according to this method, it is difficult to accurately irradiate only the surface of the recess with the energy beam, and there is a problem that the liquid repellency of the outer surface of the partition wall where the liquid repellency is desired to be lowered is also lowered.

  On the other hand, in JP-A-2002-139614, a layer having lyophilicity (hereinafter referred to as “lyophilic layer”) and a layer having liquid repellency (hereinafter referred to as “liquid repellent layer”) on the transfer film. The method of laminating in order and transferring by laminating on a supporting substrate is disclosed. However, in such a method, sufficient adhesion between the lyophilic layer and the liquid repellent layer may not be obtained.

  Thus, it is difficult to obtain a partition wall having an ideal structure by the conventionally proposed method for forming a partition wall. Under such circumstances, high-precision patterning by the droplet discharge method has been difficult. Therefore, if a partition wall having an ideal structure can be constructed, it is considered that highly accurate patterning can be performed by a droplet discharge method, and as a result, a more reliable semiconductor device can be manufactured.

  In consideration of the above points, the present invention intends to propose a method of manufacturing a semiconductor device and a highly reliable electronic device capable of manufacturing a highly reliable semiconductor device.

In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention includes forming a partition on an electrode formation surface of a substrate, and applying a liquid conductive material to the electrode formation surface of the substrate exposed through the partition. In the method of manufacturing a semiconductor device that forms electrodes, a first step of forming a liquid-repellent thin film on one surface of a transfer film, and patterning the thin film formed on the transfer film with a predetermined pattern A second step of forming a partition film having an opening functioning as the partition; and by irradiating the partition film with energy rays from the one side of the transfer film, the transfer film of the partition film A third step of making the surface portion including the opening other than the contacting surface lyophilic, a fourth step of bonding the partition film on the electrode forming surface of the substrate; And a fifth step of peeling the transfer film from the wall film.
In the method of manufacturing a semiconductor device, a partition film is formed on an electrode formation surface of a substrate, and a liquid conductive material is applied to the electrode formation surface of the substrate exposed through the partition wall to form an electrode. A first step of forming a thin film having liquid repellency on one surface, a second step of forming the partition by patterning the thin film formed on the transfer film in a predetermined pattern, and the transfer film A third step of irradiating the partition with energy rays from the one surface side, a fourth step of bonding the partition onto the electrode forming surface of the substrate, and a fifth step of peeling the transfer film from the partition. The process was provided.

  According to such a method for manufacturing a semiconductor device, the portion of the partition wall where the liquid repellency is to be retained is covered with the transfer film, and therefore, the liquid repellency is hardly lowered by the energy rays. In addition, since the other surface portions of the partition walls are lyophilic, the adhesion to the substrate is good, and the partition walls having an ideal structure (liquid repellent / lyophilic pattern) can be obtained. Accordingly, by applying a liquid conductive material on the electrode formation surface of the substrate exposed through the partition walls, high-precision patterning can be performed, and as a result, a more reliable semiconductor device can be manufactured.

  As a preferred mode, in the first step, the thin film is formed using an insulating material, and the partition is also used as an interlayer insulating film of a semiconductor device. Thereby, the manufacturing process of the semiconductor device can be simplified.

  As another preferred embodiment, in the first step, the thin film is formed using a photosensitive material, and in the second step, the thin film is exposed and developed in the predetermined pattern to thereby form the partition wall. Form. Thereby, the photolithography process at the time of patterning a thin film in a 2nd process can be simplified.

  As still another preferred embodiment, in the first step, a release layer is formed between the transfer film and the thin film so that the transfer film and the thin film can be separated by a predetermined treatment. Thereby, the peeling process which peels a transfer film from a partition in a 5th process can be simplified.

  As another preferred embodiment, a sixth step of forming the electrode by applying a liquid conductive material on the electrode formation surface of the semiconductor substrate exposed through the opening of the partition, and the above-mentioned of the partition And a seventh step of insulating the electrode formed by applying an insulating material to the opening. Thereby, the electrode formed as described above can be insulated from the outside.

  Moreover, this invention of a 2nd aspect is an electronic device provided with the semiconductor device manufactured by the manufacturing method which concerns on the invention mentioned above. Here, the “electronic device” refers to a general device having a certain function including a semiconductor device manufactured by the manufacturing method according to the present invention, and includes, for example, an electro-optical device and a memory. The configuration is not particularly limited, but for example, an IC card, a mobile phone, a video camera, a personal computer, a head-mounted display, a rear-type or front-type projector, a fax machine with a display function, a digital camera finder, a portable TV , PDA, electronic notebook, electric bulletin board, advertising display, etc.

  Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.

(1) Configuration of Thin Film Transistor According to this Embodiment FIG. 1 shows a thin film transistor 1 according to this embodiment. The thin film transistor 1 is formed on at least one surface of a substrate (for example, a glass substrate) 2 having an insulating property, and includes a source electrode 3, a drain electrode 4, an insulating film 5, a semiconductor film 6, and a gate insulating film. 7, including a gate electrode 8 and an interlayer insulating film 9.

The source electrode 3 and the drain electrode 4 are each formed by laminating a conductive material such as aluminum with a predetermined wiring pattern on one surface of the substrate 2. On the source / drain electrodes, there are source / drain regions in which impurity ions such as phosphorus formed in the same pattern are implanted at a high concentration. The method of manufacturing this portion is not limited to this, but a method of continuously patterning a conductive material to be a source / drain electrode and a silicon layer, implanting impurity ions into the silicon layer, and then patterning all at once. Etc. The silicon layer may be formed by a coating method using a liquid material containing a silicon compound and a dopant source such as phosphorus. The insulating film 5 surrounds the periphery of the source electrode 3 and the drain electrode 4 with an insulating material such as silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), or phosphor silica gate glass (PSG). It is formed by depositing. The buried film is preferably formed by a coating method using SOG (spin on glass) such as polysilazane, but is not particularly limited. In this case, the insulating film 5 should be thick enough to prevent the channel silicon layer 6 formed thereon from being disconnected, and preferably covers the source / drain electrodes made of a conductive material. More preferably, it is preferable that the source / drain region is also covered and planarized.

The semiconductor film 6 serves as an active region of the thin film transistor 1 and is formed by depositing a crystalline semiconductor material such as polycrystalline silicon (polysilicon) between the source electrode 3 and the drain electrode 4. The gate insulating film 7 is formed on the insulating film 5 so as to cover the semiconductor film 6. The gate insulating film 7 is also formed using an insulating material such as silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), or phosphor silica gate glass (PSG). In forming the semiconductor film 6 and the gate insulating film 7, a coating method such as an ink jet method or a spin coating method may be used.

  The gate electrode 8 is provided on the gate insulating film 7 so as to be positioned between the source electrode 3 and the drain electrode 4 in the semiconductor film 6. As will be described later, the gate electrode 8 is formed using a conductive material such as silver or aluminum.

  Further, the interlayer insulating film 9 is formed so as to cover the entire upper surface of the gate insulating film 7 including the gate electrode 8. The interlayer insulating film 8 is also used as a partition wall when the gate electrode 8 is formed using a droplet discharge method as will be described later, such as an acrylic resin, a polyimide resin, a fluorine resin, or a silicon resin. Formed from.

Further, the interlayer insulating film 9 is formed so as to cover the entire upper surface of the gate insulating film 7 including the gate electrode 8. This interlayer insulating film 8 is also used as a partition (partition film) when forming the gate electrode 8 by using a droplet discharge method as will be described later, and is made of acrylic resin, polyimide resin, fluorine resin or It is made of silicon resin or the like.

  In the interlayer insulating film produced by such a process, the upper surface portion where the liquid repellency is desired to remain is in contact with the transfer film when irradiated with the energy rays, so that the liquid repellency is hardly lowered by the energy rays. In addition, since the other portions are lyophilic over the entire surface, the adhesiveness with the thin film transistor substrate is good, and a pattern having ideal lyophobic and lyophilic properties can be obtained. Hereinafter, a specific manufacturing procedure of the thin film transistor 1 having such an interlayer insulating film will be described.

  In the case of this embodiment, for example, a PET (Poly Ethylene Terephthalate) film or a film made of an inorganic material such as a glass substrate is used as the transfer film. However, you may make it use what was formed using materials other than these. The transfer film is cleaned with infrared rays.

  Subsequently, as shown in FIG. 2A, a thin insulating film 11 is formed on one surface side of the transfer film 10 by applying a material having liquid repellency. As a material for the insulating film 11, an acrylic resin, a polyimide resin, a fluorine resin, a silicon resin, or the like is used. Further, by using these resins which further contain at least one of a silicon compound or a fluorine compound, the liquid repellency can be further improved. Specifically, a siloxane compound having an alkyl group in the side chain, a monomer or polymer having a perfluoroalkyl group, or the like can be used alone or in combination.

  Next, as shown in FIG. 2B, the insulating film 11 generated in this way is patterned into a predetermined pattern by photolithography. Specifically, the insulating film 11 is exposed so that a region where the gate electrode 8 is to be formed on the thin film transistor substrate 12 is exposed when the insulating film 11 is bonded to the thin film transistor substrate 12 formed by another process as described later. An opening 11 </ b> A is formed in 11. As a method for this, a photosensitive resin film is formed on the insulating film 11, and this is exposed and developed in accordance with the predetermined pattern. Thus, the insulating film 11 is edged through the opening formed in the photosensitive resin film. . Thereby, the opening 11 can be formed in the insulating film 11. Thereafter, the photosensitive resin film is removed.

  Then, as shown in FIG. 2C, the insulating film 11 is irradiated with infrared rays as energy rays from one side of the transfer film 10 on which the insulating film 11 is formed. Make the surface part other than the contacted surface lyophilic.

  On the other hand, a thin film transistor substrate 12 as shown in FIG. 2D in which up to the gate insulating film 7 is formed on the substrate 2 among the thin film transistors 1 (FIG. 1) described above is manufactured. Then, the upper surface of the thin film transistor substrate 12 on which the gate electrode 8 is to be formed (hereinafter referred to as an electrode formation surface) and the insulating film 11 formed on the transfer film 10 as described above are bonded together. For such bonding, an adhesive is applied on the electrode forming surface of the thin film transistor substrate 12, and then the insulating film 11 is positioned and placed on the thin film transistor substrate 12, and then the insulating film is heated using a thermocompression-bonding roll. 11 can be brought into close contact with the electrode forming surface of the thin film transistor substrate 12 from the transfer film 10 side.

  Next, as shown in FIG. 3E, the transfer film 10 is peeled off from the insulating film 11. At this time, if the adhesive force between the insulating film 11 and the transfer film 10 is weak, the transfer film 10 can be peeled off from the insulating film 11. In addition, when the insulating film 11 is formed on the transfer film 10 in the process of FIG. 2A for this peeling process, the transfer film 10 and the insulating film 11 are insulated between the transfer film 10 and the insulating film 11 by a predetermined process. A release layer that reduces the adhesive force between the films 11 may be formed in advance, whereby the release process of the transfer film 10 can be simplified. Specifically, for example, a release layer made of a water-soluble adhesive that can be removed by washing is provided, or a release layer made of a photosensitive resin material whose adhesive strength is reduced by light irradiation is provided.

  In this manner, the interlayer insulating film 13 made of the insulating film 11 having the lyophilic surface in the recess 13A and the liquid repellent upper surface 13B can be formed on the thin film transistor substrate 12. According to the experiment, the contact angle of water on the surface of the recess 13A at this time is about 100 degrees, and the contact angle of water on the upper surface 13B of the interlayer insulating film 13 is about 10 degrees. It was confirmed that sufficient lyophilicity was obtained and sufficient liquid repellency was obtained on the upper surface.

  Thereafter, as shown in FIG. 3F, metal fine particles are dispersed as a conductive material for forming the gate electrode 8 in the recess 13A of the interlayer insulating film 13 formed on the thin film transistor substrate 12 in this way. Ink 14 is sprayed by a droplet discharge method. As the ink 14 in this case, for example, a paste containing silver fine particles having a particle diameter of about 0.01 [μm] diluted with toluene to have a viscosity of about 10 [cP] can be used. Thereafter, the ink 14 is baked at about 250 [° C.]. Thereby, the gate electrode 8 can be formed.

  Then, as shown in FIG. 3 (G), the insulating material 15 is filled in the recesses 13A of the interlayer insulating film 13 in which the gate electrode 8 is formed as described above, and the holes are filled. Thereby, the gate electrode 8 is insulated from the outside. As the insulating material 15 in this case, the same material as the interlayer insulating film 13 (that is, the same material as the insulating film 11) or another insulating material can be used. In addition, as a hole filling method, a solution of an insulating material for filling a hole is dropped on the interlayer insulating film 13 and is filled in each recess 13A by extending it by a spin coat method, or by using a droplet discharge method. A method of spraying a solution can be applied.

  As a result, as shown in FIG. 3G, the interlayer insulating film 9 formed by filling the recesses 13A of the interlayer insulating film 13 with the insulating material 15 on the electrode formation surface of the thin film transistor substrate 12 was formed. The thin film transistor 1 can be obtained.

  According to the above process, the liquid repellency of the upper surface portion of the insulating film 11 serving as the base of the interlayer insulating film 9 hardly deteriorates during the energy beam irradiation process described above with reference to FIG. Since the surface of the portion is lyophilic over the entire surface, the adhesion with the thin film transistor substrate 12 is good, and an interlayer insulating film 9 having an ideal lyophobic / lyophilic pattern structure as a partition can be obtained. As a result, in the step of spraying the ink 14 in which the metal fine particles are dispersed in the recesses 13A of the interlayer insulating film 13 described above with reference to FIG. 3F by the droplet discharge method, the ink 14 reaches the corners in the recesses 13A. Can be diffused. As a result, the gate electrode 8 having a desired pattern can be formed with high accuracy, and as a result, a highly reliable thin film transistor can be manufactured.

  Next, specific examples of an integrated circuit, an electro-optical device, and an electronic device including the semiconductor device manufactured as described above will be described.

  FIG. 4 is a circuit diagram of the electro-optical device 30 including the semiconductor device. The electro-optical device (display device) 30 of this embodiment includes a light emitting layer OELD capable of emitting light by an electroluminescence effect in each pixel region, and a storage capacitor that stores a current for driving the light emitting layer OELD, and further includes a semiconductor according to the present invention. The apparatus (thin film transistors T1 to T4) is provided. A scanning line Vsel and a light emission control line Vgp are supplied from the driver 31 to each pixel region. A data line Idata and a power supply line Vdd are supplied from the driver 32 to each pixel region. By controlling the scanning line Vsel and the data line Idata, a current program for each pixel region is performed, and light emission by the light emitting unit OELD can be controlled.

  The drive circuit is an example of a circuit in the case where an electroluminescent element is used as a light emitting element, and other circuit configurations are possible. It is also preferable that the integrated circuit constituting each of the drivers 31 and 32 is formed by the semiconductor device according to the present invention.

  FIG. 5 is a diagram illustrating a specific example of an electronic apparatus including the electro-optical device described above. FIG. 5A shows an application example to a cellular phone, and the cellular phone 40 includes an antenna unit 41, an audio output unit 42, an audio input unit 43, an operation unit 44, and the electro-optical device 30 of the present invention. As described above, the electro-optical device according to the invention can be used as a display unit.

  FIG. 5B shows an application example to a video camera. The video camera 50 includes an image receiving unit 51, an operation unit 52, an audio input unit 53, and the electro-optical device 30 of the present invention. FIG. 5C is an example applied to a television, and the television 60 includes the electro-optical device 30 of the present invention. The electro-optical device according to the present invention can be similarly applied to a monitor device used for a personal computer or the like. FIG. 5D shows an application example to a roll-up television, and the roll-up television 70 includes the electro-optical device 30 of the present invention.

  Further, the electronic device is not limited to these, and can be applied to various electronic devices having a display function. For example, in addition to these, a fax machine with a display function, a finder for a digital camera, a portable TV, an electronic notebook, an electric bulletin board, a display for advertisements, and the like are also included. Note that the semiconductor device according to the present invention can be applied as a component part of an electronic device alone, in addition to the case where it is included in the electronic device as described above as a component part of the electro-optical device.

  Further, the method for manufacturing a semiconductor device according to the present invention is not limited to the above example, and can be applied to the manufacture of any electronic device. For example, in addition to this, the present invention can also be applied to a fax machine with a display function, a digital camera finder, a portable TV, a PDA, an electronic notebook, an electric bulletin board, an advertisement display, an IC card, and the like.

(3) Other Embodiments In the above-described embodiment, acrylic resin, polyimide resin, fluorine-based resin, silicon-based resin, or the like is used as the material for the partition / interlayer insulating film, and this is used by photolithography. However, the present invention is not limited to this. For example, a photosensitive resin material is used as a material for the partition / interlayer insulating film, and the patterning is performed by exposing and developing the material. Also good. Thus, the photolithography process in patterning the insulating film 11 (FIG. 2A) can be simplified, and the manufacturing process of the thin film transistor 1 can be simplified as a whole.

  In the above embodiment, the case where the present invention is applied to the manufacture of the thin film transistor 1 having the staggered structure has been described. However, the present invention is not limited to this, and the present invention is not limited to this. Can also be applied. Note that in the step described above with reference to FIG. 3F, in consideration of the heat resistance of the interlayer insulating film 13 and the gate electrode 8 by a droplet discharge method, it is preferable to use a top gate type thin film transistor. .

It is a rough sectional drawing which shows the structure of the thin-film transistor by this Embodiment. It is sectional drawing with which it uses for description of the manufacturing procedure of the thin-film transistor by this Embodiment. It is sectional drawing with which it uses for description of the manufacturing procedure of the thin-film transistor by this Embodiment. FIG. 3 is a circuit diagram of an electro-optical device that includes a semiconductor device. It is explanatory drawing with which description of the specific example of an electronic device is provided.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Thin film transistor, 8 ... Gate electrode, 9, 13 ... Interlayer insulating film, 10 ... Transfer film, 11 ... Insulating film, 11A, 13A ... Opening, 13B ... Top surface, 14 ... Ink.

Claims (6)

A method of manufacturing a semiconductor device, wherein a partition is formed on an electrode formation surface of a substrate, and a liquid conductive material is applied to the electrode formation surface of the substrate exposed through the partition to form an electrode.
A first step of forming a liquid-repellent thin film on one surface of the transfer film;
A second step of forming a partition film in which an opening functioning as the partition is formed by patterning the thin film formed on the transfer film in a predetermined pattern;
By irradiating the partition film with energy rays from the one surface side of the transfer film, a surface portion including the opening other than the surface in contact with the transfer film of the partition film is made lyophilic. Process,
A fourth step of bonding the partition film onto the electrode forming surface of the substrate;
A fifth step of peeling the transfer film from the partition film ;
A method for manufacturing a semiconductor device, comprising: In the first step, the thin film is formed using an insulating material,
The partition film also serves as an interlayer insulating film of a semiconductor device.
The method of manufacturing a semiconductor device according to claim 1. In the first step,
Forming the thin film using a photosensitive material;
In the second step,
The barrier film is formed by exposing and developing the thin film with the predetermined pattern.
The method for manufacturing a semiconductor device according to claim 1, wherein: In the first step,
Forming a release layer that allows separation between the transfer film and the thin film between the transfer film and the thin film;
The method for manufacturing a semiconductor device according to claim 1, wherein: Furthermore,
A sixth step of forming the electrode by applying a liquid conductive material on the electrode formation surface of the semiconductor substrate exposed through the opening of the partition film ;
A seventh step of insulating the electrode formed by applying an insulating material in the opening of the partition film ;
5. The method of manufacturing a semiconductor device according to claim 1, comprising:   An electronic apparatus comprising a semiconductor device manufactured by the method for manufacturing a semiconductor device according to any one of claims 1 to 5.

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