JP4597796B2 - Nitride-based compound semiconductor light-emitting device and method for manufacturing the same - Google Patents

Description

  The present invention relates to a nitride-based compound semiconductor light-emitting device capable of emitting light from a blue region to an ultraviolet region and a method for manufacturing the same, and more particularly to a nitride-based compound semiconductor light-emitting device having a conductive substrate attached thereto and a method for manufacturing the same.

A nitride-based compound semiconductor is represented by, for example, In _x Ga _y Al _z N (where x + y + z = 1, 0 ≦ x <1, 0 <y ≦ 1, 0 ≦ z <1), and has a large energy band gap or It has high thermal stability, and it is also possible to control the band gap width by adjusting its composition. Accordingly, nitride-based compound semiconductors are expected as materials that can be applied to various semiconductor devices including light-emitting elements and high-temperature devices.

  Among these, for light-emitting diodes using nitride-based compound semiconductors, devices having a luminous intensity of several cd levels in the blue to green light wavelength region have already been developed and put into practical use. Also, the practical application of a laser diode using a nitride compound semiconductor as a light source for pickup for a large-capacity optical disk medium is becoming a research and development target.

  Patent Document 1 listed below discloses such element structures of lasers and light emitting diodes. Specifically, as shown in FIG. 5, a first ohmic electrode 102 and a second ohmic electrode 101 are formed on a conductive substrate 100 on which a positive electrode 107 is formed, and a gallium nitride based semiconductor is formed thereon. The P-type layer 103, the active layer 104, and the N-type layer 105 are sequentially stacked, and the negative electrode 106 is formed thereon. Here, the first ohmic electrode 102 and the second ohmic electrode 101 are thermocompression bonded.

  As described above, in the conventional technique described in Patent Document 1 below, an ohmic electrode is formed on a conductive substrate, and a gallium nitride based semiconductor layer is bonded using a technique such as thermocompression bonding.

  However, since the adhesiveness between the conductive substrate and the ohmic electrode is weak, there is a problem that the conductive substrate is peeled off from the ohmic electrode. When the conductive substrate and the ohmic electrode are all peeled off, the sapphire substrate cannot be removed, and thus a light emitting element cannot be formed. In the case of partial peeling, there is a problem that the current does not flow well from the gallium nitride based semiconductor layer to the conductive substrate and the operating voltage increases, thereby deteriorating the reliability of the light emitting element.

  Furthermore, when the above-mentioned part is peeled off, a solvent, a resist and an etching solution are soaked during the process. For example, in the case of a lamp light emitting element, the resin, moisture, etc. are penetrated from the part where it is peeled off. The electrode could be destroyed. As a result, the reliability of the light emitting element has been deteriorated.

In addition, when an Au wire is bonded to the pad electrode, if the adhesion between the conductive substrate and the ohmic electrode on the conductive substrate is poor, peeling occurs between the conductive substrate and the ohmic electrode, which increases the operating voltage. there were.
Japanese Patent Laid-Open No. 9-8403

  The present invention has been made in order to solve the above-mentioned problems of the prior art, and its purpose is to improve the adhesion between the conductive substrate and the ohmic electrode and to provide a highly reliable nitride-based compound semiconductor light emitting device. It is providing a device and a method for manufacturing the device.

According to the nitride-based compound semiconductor light emitting device of the present invention, a support substrate, a first ohmic electrode formed on the support substrate, an adhesive metal layer formed on the first ohmic electrode, A reflective layer formed on the adhesive metal layer; a second ohmic electrode formed on the reflective layer; a nitride-based compound semiconductor layer formed on the second ohmic electrode; and the support look including the ohmic electrode formed on the back surface of the substrate, the second ohmic electrode has an exposed metal surface by removing the nitride compound semiconductor layer in the groove shape, the reflective layer is Ag It is made of a material mixed with rare earth elements.

  Preferably, in the nitride compound semiconductor layer, at least a P-type layer, a light emitting layer, and an N-type layer are laminated in this order from the support substrate side.

Preferably, the support substrate is conductive and is made of one or more of Si, GaAs, and GaP, and the resistivity of the support substrate is in the range of 10 Ωcm to 10 ⁻⁴ Ωcm.

  Preferably, the support substrate is conductive and is made of any one or more of CuW, CuAg, or CuMo, and the support substrate has a thermal conductivity of 1.5 W / cm · k to 2.5 W / cm · k. Is within the range.

  Preferably, the number of the metal layers for adhesion is two or more, and each of the two or more layers is formed of different materials or the same material.

  Preferably, the bonding metal layer is made of any one of Au, Sn, Au—Sn, and Au—Ge.

Preferably, the bonding metal is composed of two or more different metals among Au, Sn, Au—Sn, and Au—Ge.

Preferably, before Symbol reflective layer is Ru consists of Ag-Nd.

Preferably, the second ohmic electrode has a layer thickness in the range of 1 nm to 15 nm .

According to the method for manufacturing a nitride-based compound semiconductor light-emitting device according to another aspect of the present invention, a step of forming a nitride-based compound semiconductor layer on a substrate and a second ohmic contact on the nitride-based compound semiconductor layer A step of forming an electrode, a step of forming a second adhesive metal layer on the second ohmic electrode, a step of forming a first ohmic electrode on a support substrate, and the first ohmic electrode A step of forming a first bonding metal layer, a step of bonding the first bonding metal layer and the second bonding metal layer, and the nitride-based compound semiconductor layer are stacked. the substrate is removed by laser irradiation include a step of exposing the surface of the nitride-based compound semiconductor layer, the nitride-based compound semiconductor layer includes at least P-type layer, light emitting layer and N-type layer, wherein The P-type layer is A reflection made of a material obtained by mixing a rare earth element with Ag on the second ohmic electrode between the step of forming the second ohmic electrode and the step of forming the second bonding metal layer. Forming a layer.

  Preferably, the step of stacking the nitride-based compound semiconductor layer on the substrate includes the step of stacking at least an N-type layer, a light emitting layer, and a P-type layer in this order from the substrate side.

Preferably, the step of pre-Symbol forming second bonding metal layer is a step of forming said second bonding metal layer on the reflective layer.

Preferably, a step of removing a part of the nitride-based compound semiconductor layer to expose the second ohmic electrode, a step of irradiating the exposed metal surface with a laser, and a portion irradiated with the laser The method further includes a step of forming a scribe line from the back surface side of the support substrate and a step of dividing along the scribe line. Preferably, the substrate on which the nitride-based compound semiconductor layer is formed is an insulating substrate of sapphire, spinel, or lithium niobate, or any of silicon carbide, silicon, zinc oxide, or gallium arsenide. It is a conductive substrate.

  According to the nitride-based compound semiconductor light-emitting device and the method for manufacturing the same of the present invention, since the short circuit is prevented by the bonding metal layer, the yield during the process is increased. Further, since the leakage current of the element can be reduced, the reliability is also good. Further, the P-type layer of the nitride-based compound semiconductor layer can be converted to a P-type during the substrate removal, so that a heat treatment step is not necessary and the process is simplified.

  According to the nitride-based compound semiconductor light emitting device of the present invention, a support substrate, a first ohmic electrode formed on the support substrate, an adhesive metal layer formed on the first ohmic electrode, A second ohmic electrode formed on the adhesion metal layer, a nitride compound semiconductor layer formed on the second ohmic electrode, and a transparent electrode formed on substantially the entire upper surface of the semiconductor layer; And an ohmic electrode formed on the back surface of the support substrate. In particular, it is characterized by forming a metal layer for adhesion.

  In this way, by forming an adhesive metal layer between the first ohmic electrode and the second ohmic electrode, peeling of the ohmic electrode can be prevented, and a highly reliable light-emitting element can be obtained. it can.

  Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic cross-sectional view of a nitride-based compound semiconductor light emitting device of the present invention. In the nitride compound semiconductor light emitting device of the present invention, the first ohmic electrode 12 is formed on the support substrate 11, the bonding metal layer 20 is formed on the first ohmic electrode 12, and the bonding metal The second ohmic electrode 13 is formed on the layer 20, the nitride compound semiconductor layer 30 is formed on the second ohmic electrode 13, and the transparent electrode 17 is formed on the nitride compound semiconductor layer 30. The pad electrode 18 is formed on the transparent electrode 17. Here, a reflective metal layer 19 is preferably formed between the bonding metal layer 20 and the second ohmic electrode 13.

  In the nitride-based compound semiconductor light emitting device of FIG. 1, an ohmic electrode 14 is further formed on the back surface of the support substrate 11 as shown in FIG. 2, and a wire bonding 10 is formed on the pad electrode 18. Preferably it is.

  In the present invention, the bonding metal layer 20 is preferably formed of two or more layers. In this case, as shown in FIG. 2, for example, the first adhesive metal layer 21 and the second adhesive metal layer 22 can be used.

  In the present invention, the nitride-based compound semiconductor layer 30 is a P-type layer 33, a light-emitting layer 32, and an N-type layer 31 in order from the support substrate side as shown in FIG. This is for functioning as a light emitting element.

  In the present invention, CuW, CuAg, CuMo, or the like can be used as the support substrate 11. In this case, the thermal conductivity of the support substrate is preferably in the range of 2.5 W / cm · k or less. When it exceeds 2.5 W / cm · k, there is a problem that heat is generated when a large current is passed through the light emitting element, and the reliability of the light emitting element is deteriorated. More preferably, a material such as CuW, CuAg, or CuMo that is in the vicinity of 1.5 W / cm · k is preferable.

In the present invention, Si, GaAs, GaP, or the like can be used for the support substrate 11. In this case, the resistivity of the support substrate is preferably in the range of 10 Ωcm or less and 10 ⁻⁴ Ωcm or more. It is difficult to fabricate a substrate of less than 10 ⁻⁴ Ωcm, and when it exceeds 10 Ωcm, ohmic properties with the ohmic electrode deteriorate, and the voltage here rises to increase the driving voltage of the light emitting element. This is because a problem may occur. More preferably, it is in the range of 10 ⁻³ Ωcm or more and 10 ⁻² Ωcm or less.

  Moreover, it is preferable that the thickness of a support substrate shall be 50 micrometers or more and 500 micrometers or less. If it exceeds 500 μm, it may be difficult to divide the chip, and if it is less than 50 μm, it is difficult to handle the chip.

  In the present invention, Al, Cr, Ti, In, and Ti—Al can be used for the first ohmic electrode, but the present invention is not limited to this.

  In the present invention, the adhesion metal layer is provided to improve the adhesion between the second ohmic electrode and the first ohmic electrode, as will be described later. As such a metal layer for adhesion, either Au, Sn, Au—Sn, or Au—Ge can be used. Moreover, when there are two or more metal layers for bonding, each layer may be the same or different, and the same or different materials among the above materials can be used in appropriate combination.

  Here, when there are two or more metal layers for bonding, the first metal layer for bonding formed on the first ohmic electrode and the second ohmic electrode in the process of forming the metal layer for bonding In this case, the second bonding metal layer formed in advance is formed in advance, and these bonding metal layers are joined to form two layers.

  In the present invention, the second ohmic electrode may be Pd, Ni, Ni—Au, but is not limited thereto. The thickness of the second ohmic electrode is preferably in the range of 1 nm to 15 nm. If the thickness exceeds 15 nm, there is a possibility that the transmission of light emission is reduced. If the thickness is less than 1 nm, there is a possibility that the ohmic contact is deteriorated.

In the present invention, the nitride compound semiconductor can emit light in a blue region to an ultraviolet region. Examples of such a nitride-based compound semiconductor include In _x Al _y Ga _1-xy (O ≦ x, 0 ≦ y, x + y ≦ 1), but are not limited thereto. The nitride-based compound semiconductor layer in the present invention is an N-type layer, a light-emitting layer, and a P-type layer from the substrate side. As a method for manufacturing the N-type layer, the light-emitting layer, and the P-type layer, those known in the art can be used, and examples include MOCVD and MBE.

  In the present invention, the nitride-based compound semiconductor layer is preferably formed by previously stacking an N-type layer, a light-emitting layer, and a P-type layer before joining to the first ohmic electrode. That is, as shown in FIG. 3, a buffer layer 36, an N-type layer 31, a light emitting layer 32, and a P-type layer 33 are stacked and grown in this order on a substrate 35 to form a nitride-based compound semiconductor layer. . Next, the second ohmic electrode 13, the reflective layer 19, the barrier layer 15, and the second bonding metal layer 22 are formed in this order on the P-type layer by vapor deposition or the like. Thereafter, the second bonding metal layer 22 is bonded to the first bonding metal layer 21.

  As the substrate, an insulating substrate such as sapphire, spinel, or lithium niobate, or a conductive substrate such as silicon carbide, silicon, zinc oxide, or gallium arsenide can be used. Further, such a substrate can be removed by grinding and polishing or a laser lift-off method.

  The reflection layer is for reflecting light from the light emitting layer upward. For the reflective layer, a material in which rare earth (eg, Nd) is mixed with Ag, Al, or Ag can be used, but the present invention is not limited to this.

  The barrier layer is for preventing the bonding metal from entering the reflective layer. The barrier layer can be made of Mo, Ni, Ti, or Ni—Ti, but is not limited thereto. The thickness of the barrier layer can be 5 nm or more. If the thickness is less than 5 nm, the thickness of the barrier is not uniform, and a region where the layer is not formed is generated, which may cause a problem that the adhesive metal enters the reflective layer.

  In the present invention, Pd, Ni, Ni—Au can be used for the transparent electrode, and the thickness thereof can be 1 nm or more and 15 nm or less. This is because if it exceeds 15 nm, there is a problem that light emission does not transmit upward, and if it is less than 1 nm, there is a possibility that a problem of deterioration of ohmic contact may occur. Further, a transparent conductor film such as ITO can be used.

  Next, the manufacturing method of the nitride type compound semiconductor light emitting element of this invention is demonstrated. According to the method for manufacturing a nitride-based compound semiconductor light emitting device of the present invention, a step of forming a nitride-based compound semiconductor on a substrate, and a step of forming a second ohmic electrode on the nitride-based compound semiconductor; Forming a second adhesion metal layer on the second ohmic electrode; forming a first ohmic electrode on the support substrate; and a second adhesion on the first ohmic electrode. Forming a metal layer for bonding, a step of bonding the first bonding metal layer and the first bonding metal layer, and removing the substrate to expose a surface of the nitride-based compound semiconductor layer And a step of forming a transparent electrode on the exposed surface.

  In the manufacturing method of the present invention, as described above, a nitride-based compound semiconductor, a second ohmic electrode, and a second bonding metal layer are formed in advance on a substrate, and this is formed into a structure on the support substrate side, that is, And a structure including a support substrate, a first ohmic electrode, and a first metal layer for adhesion.

  As a result, the electrodes can be formed on the top and bottom of the element, and both are joined by the adhesive metal layer, so that the ohmic electrode does not peel off and the adhesion is good, and the reliability of the resulting light emitting element Will be higher.

  In the production method of the present invention, in order to form the first ohmic electrode and the first bonding metal layer on the support substrate, an electron beam evaporation method (EB method), a sputtering method, or a resistance heating evaporation method is used. it can. The EB method or the like can also be used for the step of forming the second ohmic electrode on the nitride-based compound semiconductor layer.

  In the production method of the present invention, a eutectic bonding method can be used to join the first bonding metal layer and the second bonding metal layer. In this case, the temperature and pressure can be appropriately set depending on the material used.

  In the manufacturing method of the present invention, the step of removing a part of the nitride-based compound semiconductor layer and exposing the second ohmic electrode can be performed using, for example, RIE. The step of irradiating the exposed surface with a laser can be performed by a method of irradiating a laser beam having a laser wavelength of 355 nm or 1064 nm. Further, the step of forming a scribe line on the portion irradiated with the laser from the back side of the support substrate is performed by a scribe line formation method facing the groove formed by irradiating the laser beam with an infrared transmission type scribe device. be able to. Moreover, the process of dividing | segmenting along a scribe line can be performed with the method of braking.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in detail, this invention is not intended to be limited to this.

Example 1
On the Si substrate as the support substrate 11, a Ti (15 nm) / Al (150 nm) layer as the first ohmic electrode 12, an Au (3 μm) layer as the first bonding metal layer 21, and an electron beam evaporation method in this order. (EB method).

  Next, a buffer layer 36, an N-type nitride compound semiconductor layer 31, a light emitting layer 32, and a P-type nitride compound semiconductor layer 33 were sequentially grown on the sapphire substrate as the substrate 35. Here, an MOCVD method (metal organic chemical vapor deposition method) was used. Further, as the buffer layer 36, a GaN buffer layer is formed with a thickness of 20 nm, the N-type nitride compound semiconductor layer 31 is formed with a thickness of 7 μm, and as the light emitting layer 32, an MQW light emitting layer is formed with a thickness of 50 nm. The P-type nitride-based compound semiconductor layer 33 was sequentially stacked with a thickness of 200 nm.

  Next, the second ohmic electrode 13, the reflective metal layer 19, the barrier metal layer 15, and the second bonding metal layer 22 were formed on the P-type nitride compound semiconductor layer 33 by vapor deposition. Specifically, Pd is formed with a thickness of 3 nm as the second ohmic electrode 13 from the P-type nitride compound semiconductor layer 33 side, Ag is formed with a thickness of 150 nm as the reflective metal layer 19, and a barrier metal is formed. Mo was formed as a layer 15 with a thickness of 50 nm, and Au and AuSn were sequentially formed as a second bonding metal layer 22 with a thickness of 100 nm and 3 μm, respectively. The formation was performed by vapor deposition by the EB method. Here, Sn of AuSn was 20 mass%.

Next, the first bonding metal layer 21 and the second bonding metal 22 on the P-type nitride compound semiconductor layer 33 were joined. Specifically, Au and AuSn were made to face each other and bonded using a eutectic bonding method at a temperature of 290 ° C. and a pressure of 200 N / cm ² .

  Thereafter, as shown in FIG. 4, the sapphire substrate as the substrate 35 was removed. Specifically, a YAG-THG laser (wavelength 355 nm) indicated by an arrow in FIG. 4 is irradiated from the sapphire substrate side, and a part of the sapphire substrate, GaN buffer layer 36 and N-type nitride compound semiconductor layer 31 is heated. The sapphire substrate was removed by decomposition.

  The N-type nitride compound semiconductor layer 31 exposed by removing the sapphire substrate was formed with a transparent electrode 17 (ITO formed with a thickness of 150 nm) and a bonding pad 18 substantially at the center of the transparent electrode 17. An Au wire is ball-bonded on the bonding pad 18 as the wire bonding 10. Thereby, the manufacturing process of the light emitting element was completed.

  Next, using RIE, the nitride compound semiconductor layer produced by the above process is removed in a groove shape, the second ohmic electrode is exposed, and the exposed metal surface is irradiated with the laser. A groove (depth 20 μm, width 15 μm) reaching the support substrate through the metal layer was formed. Thereafter, a scribe line (division line) was formed from the back side of the support substrate to the laser irradiation portion, and the chip was formed by dividing along the scribe line.

  According to the nitride-based compound semiconductor light-emitting device of the present invention manufactured as described above, a relatively thick N-type nitride-based compound semiconductor layer, a light-emitting layer, and P on a support substrate using Si material. In order to form a type nitride compound semiconductor layer, a short circuit is prevented by an adhesive metal layer, so that the yield in the process is increased and the leakage current of the device can be reduced, so that the nitride layer with high reliability can be obtained. Fabrication of a physical compound semiconductor light emitting device has become possible. Conventionally, heat treatment was required to convert the P-type nitride-based compound semiconductor layer to P-type, but in the present invention, it is possible to convert to P-type while irradiating laser during sapphire substrate removal. There is no need for a heat treatment step, and the process is further simplified.

(Example 2)
On the CuW substrate as the support substrate 11, a Ti (15 nm) / Al (150 nm) layer as the first ohmic electrode 12, an Au (3 μm) layer as the first bonding metal layer 21, and an electron beam evaporation method in this order. (EB method).

  Next, the buffer layer 36, the N-type nitride compound semiconductor layer 31, the light emitting layer 32, and the P-type nitride compound semiconductor layer 33 were sequentially grown on the sapphire substrate as the substrate 35. Here, an MOCVD method (metal organic chemical vapor deposition method) was used. Further, as the buffer layer 36, a GaN buffer layer is formed with a thickness of 20 nm, the N-type nitride compound semiconductor layer 31 is formed with a thickness of 5 μm, and as the light emitting layer 32, an MQW light emitting layer is formed with a thickness of 50 nm. The P-type nitride-based compound semiconductor layer 33 was sequentially stacked with a thickness of 200 nm.

  Next, the second ohmic electrode 13, the reflective metal layer 19, the barrier metal layer 15, and the second bonding metal layer 22 were formed on the P-type nitride compound semiconductor layer 33 by vapor deposition. Specifically, Pd is formed with a thickness of 3 nm as the second ohmic electrode 13 from the P-type nitride compound semiconductor layer 33 side, and Ag—Nd is formed with a thickness of 150 nm as the reflective metal layer 19. Ni-Ti was formed as the barrier metal layer 15 with a thickness of 50 nm, and AuSn was sequentially formed as the second bonding metal layer 22 with a thickness of 3 μm. The formation was performed by vapor deposition by the EB method.

Next, the first bonding metal layer 21 and the second bonding metal 22 on the P-type nitride compound semiconductor layer 33 were joined. Specifically, Au and AuSn were opposed to each other and bonded using a eutectic bonding method at a temperature of 320 ° C. and a pressure of 200 N / cm ² .

  Thereafter, as shown in FIG. 4, the sapphire substrate as the substrate 35 was removed. Specifically, a YAG-THG laser (wavelength 355 nm) indicated by an arrow in FIG. 4 is irradiated from the sapphire substrate side, and a part of the sapphire substrate, GaN buffer layer 36 and N-type nitride compound semiconductor layer 31 is heated. The sapphire substrate was removed by decomposition.

  The N-type nitride compound semiconductor layer 31 exposed by removing the sapphire substrate was formed with a transparent electrode 17 (ITO formed with a thickness of 150 nm) and a bonding pad 18 substantially at the center of the transparent electrode 17. An Au wire is ball-bonded on the bonding pad 18 as the wire bonding 10. Thereby, the manufacturing process of the light emitting element was completed.

  Next, using RIE, the nitride compound semiconductor layer produced by the above process is removed in a groove shape, the second ohmic electrode is exposed, and the exposed metal surface is irradiated with the laser. A groove (depth 20 μm, width 15 μm) reaching the support substrate through the metal layer was formed. Thereafter, a scribe line (division line) was formed from the back side of the support substrate to the laser irradiation portion, and the chip was formed by dividing along the scribe line.

  According to the nitride-based compound semiconductor light-emitting device of the present invention produced as described above, CuW having a good thermal conductivity was used as the support substrate instead of Si. Since CuW, CuAg, CuMo, etc. have good thermal conductivity, it is possible to efficiently release the heat generated by laser irradiation when the sapphire substrate is peeled off by irradiating the laser from the opposite side of the support substrate. There is an advantage that thermal damage to the light emitting layer due to irradiation is reduced. Further, as in Example 1, further, heat treatment was conventionally necessary to convert the P-type nitride-based compound semiconductor layer to P-type, but in the present invention, laser irradiation was performed while removing the sapphire substrate. It is possible to make it P-type, and a heat treatment step is not necessary, and the process is further simplified. Further, since heat dissipation is good and a large current can flow, a high-power nitride-based compound semiconductor light-emitting element can be realized.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a schematic sectional drawing of the nitride type compound semiconductor light-emitting device of this invention. It is a schematic sectional drawing of the specific example of the nitride type compound semiconductor light-emitting device of this invention. It is a schematic sectional drawing of the specific example of the nitride type compound semiconductor layer in this invention. It is a schematic sectional drawing for demonstrating the process of removing the board | substrate of the nitride type compound semiconductor light-emitting device in this invention. It is a schematic sectional drawing of the conventional compound semiconductor light-emitting device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Wire bonding, 11 Support substrate, 12 1st ohmic electrode, 13 2nd ohmic electrode, 14 Ohmic electrode, 15 Barrier layer, 17 Transparent electrode, 18 Pad electrode, 19 Reflective metal layer, 20 Adhesive metal layer, 21 First metal layer for bonding, 22 Second metal layer for bonding, 30 Nitride-based compound semiconductor layer, 31 N-type layer, 32 Light-emitting layer, 33 P-type layer, 100 Conductive substrate, 101 Second ohmic electrode , 102 first ohmic electrode, 103 P-type layer, 104 active layer, 105 N-type layer, 106 negative electrode, 107 positive electrode.

Claims (14)

A support substrate, a first ohmic electrode formed on the support substrate, an adhesive metal layer formed on the first ohmic electrode, a reflective layer formed on the adhesive metal layer, viewed including a second ohmic electrode formed on the reflective layer, and the nitride compound semiconductor layer formed on said second ohmic electrode, and an ohmic electrode formed on the back surface of the front Symbol support substrate The second ohmic electrode has a metal surface exposed by removing the nitride-based compound semiconductor layer in a groove shape, and the reflective layer is made of a material in which a rare earth element is mixed into Ag. nitride-based compound semiconductor light-emitting element.   The nitride-based compound semiconductor light-emitting device according to claim 1, wherein the nitride-based compound semiconductor layer includes at least a P-type layer, a light-emitting layer, and an N-type layer stacked in this order from the support substrate side. element. Wherein the support substrate is electrically conductive, and Si, is composed of any one or more GaAs or GaP, and wherein the resistance ratio of the supporting substrate is in the range of ^{10 -4 Ωcm~10Ωcm,} wherein Item 3. The nitride compound semiconductor light-emitting device according to Item 1 or 2.   The support substrate is conductive and is composed of one or more of CuW, CuAg, or CuMo, and the thermal conductivity of the support substrate is in the range of 1.5 W / cm · k to 2.5 W / cm · k. The nitride-based compound semiconductor light-emitting element according to claim 1, wherein The bonding metal layer is Au, Sn, Au-Sn or be configured in any of a metal of Au-Ge and said nitride-based compound semiconductor light-emitting device according to any one of claims 1-4 . The said metal layer for adhesion | attachment is two or more layers, Each of these two or more layers is formed with a mutually different material, or the same material, The one in any one of Claims 1-5 characterized by the above-mentioned. Nitride compound semiconductor light emitting device. The nitride-based compound semiconductor light-emitting element according to claim 6 , wherein the bonding metal layer is made of two or more different metals selected from Au, Sn, Au—Sn, and Au—Ge. The nitride-based compound semiconductor light-emitting element according to claim 1, wherein the reflective layer is made of Ag—Nd.   9. The nitride-based compound semiconductor light-emitting element according to claim 1, wherein the second ohmic electrode has a layer thickness in a range of 1 nm to 15 nm. A step of forming a nitride compound semiconductor layer on a substrate, a step of forming a second ohmic electrode on the nitride compound semiconductor layer , and a second adhesion layer on the second ohmic electrode. A step of forming a metal layer, a step of forming a first ohmic electrode on the support substrate, a step of forming a first metal layer for bonding on the first ohmic electrode, and the first bonding A step of bonding the metal layer and the second bonding metal layer, and a step of exposing the surface of the nitride compound semiconductor layer by removing the substrate on which the nitride compound semiconductor layer is laminated by laser irradiation When encompasses, the nitride-based compound semiconductor layer at least P-type layer includes an emission layer and an N-type layer, the P-type layer is P-type between the laser irradiation, the second ohmic electrode And the second bonding gold Wherein on the Ag second ohmic electrode comprises a step of forming a reflective layer of contaminated material a rare earth element, a method of manufacturing a nitride-based compound semiconductor light-emitting device between the step of forming the layer. Laminating forming a nitride compound semiconductor on said substrate, N-type layer from the substrate side, characterized in that it comprises a step of at least laminated light-emitting layer and a P-type layer in this order, to claim 10 The manufacturing method of the nitride type compound semiconductor light-emitting device of description. Forming a pre-Symbol second bonding metal layer is characterized by on the reflective layer is a step of forming said second bonding metal layer of nitride according to claim 10 or 11 Of manufacturing a compound semiconductor light emitting device. A step of removing a part of the nitride compound semiconductor layer to expose the second ohmic electrode, a step of irradiating the exposed surface with a laser, and a portion irradiated with the laser on a supporting substrate The manufacturing method of the nitride type compound semiconductor light-emitting device according to any one of claims 10 to 12 , further comprising a step of forming a scribe line from the side and a step of dividing along the scribe line. Substrate to be laminated forming the nitride-based compound semiconductor layer, sapphire, or is any insulating board spinel or lithium niobate, or silicon carbide, silicon, or conductive zinc oxide or gallium arsenide characterized in that it is a substrate, a method of manufacturing a nitride-based compound semiconductor light-emitting device according to any one of claims 10-13.

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