JP4588341B2 - IC card - Google Patents

Description

  The present invention relates to a thin film integrated circuit device incorporating an integrated circuit such as a memory or a microprocessor (CPU), and more particularly to an IC card, or a portable electronic device represented by a PDA or a mobile phone.

In recent years, the field of using IC cards has increased, and the demand for IC cards with more functionality has increased. On the other hand, illegal use of IC cards is increasing, and countermeasures are urgently needed. As a countermeasure against unauthorized use, there is a method of accurately performing personal authentication. As a method for authenticating the identity of a commercially available IC card, there is a method of managing a personal identification number or password, or a method of posting a face photo on a part of the card. In addition, there is a confirmation method in which data relating to the identity from an external input device and identity validation data read from the IC card are collated using an IC card incorporating identity verification data (see Patent Document 1). There is also a method in which a user inserts an IC card in which fingerprint data and a logon ID are stored in advance into a reading / authentication apparatus, and reads a fingerprint image from a fingerprint reading surface of the reading / authentication apparatus (see Patent Document 2).
JP 2000-215295 A JP 2002-258975 A

  However, when a photo of a face is posted on a part of a password, password, or card, there is a risk that someone other than the person will alter it and use it illegally when it is stolen or lost. Further, the display area of the card is limited, and the amount of information that can be provided is limited.

  Furthermore, as disclosed in Patent Document 1, when data related to the person (individual) is displayed on an external input device, there is a concern that personal information may be leaked to third parties, particularly those who manage the external device. . Also, as disclosed in Patent Document 2, when a reading / authentication device equipped with a fingerprint sensor is used, it is necessary to have the device, which increases the cost of capital investment.

  Therefore, an object of the present invention is to provide a device having an integrated circuit in which a display area is particularly devised, for example, an IC card. Furthermore, to provide an IC card, a portable electronic device such as a PDA or a mobile phone, or other device capable of performing a plurality of displays in a display area (display unit) provided in a limited range. Let it be an issue.

  In view of the above problems, in a device having a thin film integrated circuit of the present invention (hereinafter referred to as a thin film integrated circuit device), a first display portion and a second display portion having a light-transmitting property are stacked. It is characterized by that. According to the present invention, the display of the first display portion (first display) and the display of the second display portion having transparency (second display) are overlapped, thereby reducing the area of the display area. Even if there is, it can provide a lot of information. That is, the area of the display region can be reduced.

  The first display is a still image (still image) or a moving image (moving image). For example, characters, figures, symbols, or a combination of them, such as a drawn or printed one, or a photograph can be used for displaying a still image. In particular, in the case of an IC card using the present invention, it is preferable to use a photograph of the user's face. In addition, a liquid crystal display device, a light emitting device (a display device having a self light emitting element such as an EL element), electronic paper, or the like can be used for displaying a moving image.

  The second display is a still image or a moving image. For example, a dual emission light emitting device that emits light upward and downward may be used. Since the dual emission type light emitting device is designed so that light is emitted from above and below, the pixel portion of the light emitting device has translucency.

  As the light emitting device, either a passive matrix type or an active matrix type can be used. In particular, the passive matrix type is preferable because a semiconductor element functioning as switching is not formed in the pixel portion, and thus has high light-transmitting properties.

  As a display method of the light emitting device, there are full-color display, multi-color display, and monochrome display. Further, in full color display, there are a case where a light emitting element is formed by separately coating RGB, and a case where an entire color light emitting element is formed of a white light emitting material and an RGB color filter is used. In multi-color display, various emission colors are arranged at predetermined positions to emit light.

  In the present invention, either the still image or the moving image may be stacked in any order. That is, according to the present invention, it is only necessary that a plurality of display portions are stacked and the display portion provided above has translucency.

  Note that the thin film integrated circuit of the present invention is an integrated circuit having a very thin semiconductor film as an active region. The thin film integrated circuit can be formed over a flexible substrate including a plastic material (referred to as a film substrate). For this reason, the thin film integrated circuit of the present invention is very light compared to an integrated circuit (so-called IC chip) formed on a conventional silicon wafer, and can be thinned and is not easily destroyed even if dropped. Therefore, the thin film integrated circuit of the present invention is suitable for a thin film integrated circuit device such as an IC card that requires light weight, thin film thickness, and high breaking strength. Further, the pixel portion and the drive circuit portion of the light emitting device may be formed using the thin film integrated circuit of the present invention.

  In addition, the structure in which the first display portion and the second display portion, which are features of the present invention, are stacked can also be used in addition to a thin film integrated circuit device. For example, the present invention can be applied to portable electronic devices such as PDAs and mobile phones. In this case, a photograph, a liquid crystal display device, a light emitting device, electronic paper, or the like can be used for the first display portion. For the light-transmitting second display portion, a dual emission light-emitting device may be used.

  As described above, the present invention can perform a plurality of displays in a display region of a thin film integrated circuit device or a portable electronic device, and can provide a lot of information.

  The present invention provides a display by stacking a first display portion and a light-transmitting second display portion in a predetermined display area in a thin film integrated circuit device, a portable electronic device, and other products. Since the area can be reduced and a plurality of displays can be performed, a large amount of information and a complicated display can be provided. Further, high added value of the thin film integrated circuit device and the portable electronic device can be achieved.

  Furthermore, the personal information can be prevented from leaking from the external device by performing a composite display by superimposing the first display unit and the second display unit on the IC card and performing identity verification.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and it is easy for those skilled in the art to make various changes in form and details without departing from the spirit and scope of the present invention. Understood. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
FIG. 1A is a schematic diagram illustrating a state in which the first display portion and the second display portion, which are features of the present invention, are fixed so as to overlap each other. The first display unit 10 uses a photograph, and the second display unit 11 uses the above-described dual emission type light emitting device. The first display is indicated by a dotted line, and the second display is indicated by a solid line.

  FIG. 1B illustrates a state where the power of the second display portion, that is, the dual emission light emitting device is turned off. The dual emission light-emitting device has a light-transmitting property when the power is turned off and display is not performed, so that the first display 12 can be recognized. Note that the display means of the first display portion is not limited to a photograph, and a liquid crystal display device, a light-emitting display device, electronic paper, or the like may be used as described above.

  FIG. 1C shows a state where the power supply of the second display portion is turned on, and at this time, the display of the light emitting device, that is, the second display 13 can be recognized. Thus, when a dual emission light emitting device is displayed as the second display portion, the back surface can be turned on, and the display content (characters and images) can be displayed in the off state (FIG. 1C). reference). Alternatively, the display may be displayed with the back side turned off and the display content turned on (see FIG. 1C). Note that when the back surface or display content is in an off state, the light-transmitting state is obtained.

  Further, the dual emission type light emitting device can be set so that the first display can be recognized even when the power is turned on, that is, when the display is being performed. For example, the light emission intensity of the display device may be adjusted, or an image using ink (for example, fluorescent ink) that reacts with light from the light emitting device may be used for the first display portion. Furthermore, even when the second display portion displays characters with the back surface turned off, the first display can be recognized because there are many regions having translucency. In this case, a composite display in which the first display unit and the second display unit overlap can be performed.

  Note that the thin film integrated circuit of the present invention is an integrated circuit having a very thin semiconductor film as an active region. The thin film integrated circuit can be formed on a film substrate such as a plastic material. For this reason, the thin film integrated circuit of the present invention is very light compared to an integrated circuit (so-called IC chip) formed on a conventional silicon wafer, and can be thinned and is not easily destroyed even if dropped. Therefore, the thin film integrated circuit of the present invention is suitable for a thin film integrated circuit device such as an IC card that requires light weight, thin film thickness, and high breaking strength. Further, the pixel portion and the driver circuit portion of the light emitting device may be formed by using the thin film integrated circuit of the present invention.

  In addition, the structure in which the first display portion and the second display portion, which are features of the present invention, are stacked can also be used in addition to a thin film integrated circuit device. For example, the present invention can be applied to portable electronic devices such as PDAs and mobile phones. In this case, a photograph, a liquid crystal display device, a light emitting device, electronic paper, or the like can be used for the first display portion. For the light-transmitting second display portion, a dual emission light-emitting device may be used.

  As described above, the present invention can perform a plurality of displays in a predetermined display area in a thin film integrated circuit device or a portable electronic device, and can provide a lot of information.

(Embodiment 2)
In this embodiment, a specific structure of a thin film integrated circuit device is described using an IC card as an example.

  FIG. 2A shows a display area (display section) 21 having a photo on the first display portion and a dual emission type light emitting device (double-sided EL display device) on the second display portion, and a thin film integrated circuit region. 29 shows an IC card 20 having a display drive circuit (display peripheral circuit) 30.

  FIG. 2B shows an enlarged view of a cross section at a-a ′. Referring to the cross-sectional view, the first display unit 23 is provided on the base 22 of the IC card, and the second display unit 24 is provided on the first display unit. The first display unit may use a photograph or the like, and displays an image (first display). And a 1st display part may adhere | attach on a base material, or after forming an opening part (counterbore) in a base material. A dual emission light emitting device serving as a second display portion has a layer 27 (hereinafter referred to as an organic compound layer) 27 having an organic compound sandwiched between a first transparent conductive film 25 and a second transparent conductive film 26. is doing. A protective film 28 is provided on the second display portion. The protective film may cover the entire thin film integrated circuit device.

  Since the first and second transparent conductive films and the organic compound layer have translucency, the first display can be recognized. In the active matrix light-emitting device, each pixel is provided with a semiconductor element functioning as a switching element. However, since the semiconductor element is very small, the second display portion has transparency. A passive matrix light-emitting device has higher translucency because there is no semiconductor element functioning as switching.

  FIG. 3A is a cross-sectional view taken along line b-b ′ in FIG. A display region (display unit) 21 in which the first display unit and the second display unit are overlapped with each other and a thin film integrated circuit region 29 are provided. The thin film integrated circuit area includes a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random access memory) or EEPOM (Electron ICally Erasable and Programmable ROM) memory, I / O port, A processor, an interface, and the like are formed by the thin film integrated circuit of the present invention. The thin film integrated circuit region may include a signal line driver circuit and a scanning line driver circuit for the second display portion which are manufactured using the thin film integrated circuit of the present invention. The formation of the thin film integrated circuit region using the thin film integrated circuit of the present invention as described above is suitable for an IC card whose size and thickness may be limited by regulations.

  In the second display portion 24, a first transparent conductive film 25 connected to the thin film transistor, an organic compound layer 27, and a second transparent conductive film 26 are sequentially stacked.

  FIG. 3B shows an enlarged view around the boundary between the first display portion and the second display portion. A protective film 31 is provided on the first display portion 23 provided on the base 22 to protect the first display portion and prevent contamination of the thin film transistor. On the protective film, an insulating layer 36 is provided via an adhesive 32, and a semiconductor thin film (semiconductor film) 37 having an impurity region is provided. The insulating layer can have a single-layer structure or a stacked structure. In this embodiment mode, an oxide film 33 including silicon, a first base insulating film 34, and a second base insulating film 35 are sequentially stacked. ing. Note that the base insulating film may have a single-layer structure or a stacked structure including three or more layers. The adhesive may be an ultraviolet curable resin, a thermosetting resin, or a double-sided tape.

  Although not shown, when the thin film integrated circuit of the present invention is peeled and transferred onto the first display portion, a metal oxide may adhere to the lower surface of the second display portion. In some cases, the metal oxide is removed and then transferred onto the first display portion.

  In the case of an IC card having an antenna, the antenna may be formed by a printing method or photoetching using photolithography using a conductive material such as silver, copper, or aluminum.

  Note that although a thin film integrated circuit device is described in this embodiment mode, the present invention is not limited to this and can be applied to a portable electronic device or the like. In the case of portable electronic devices, a thin film integrated circuit region or a light-emitting device can be manufactured using the thin film integrated circuit of the present invention, a thin film transistor formed over glass, or a transistor having a silicon wafer, and has a wide design range. wide.

  As described above, since the second display portion has a light-transmitting property, a stacked display region can be formed, and various displays can be performed. As a result, various types of display can be performed without increasing the area of the display region. In addition, when a photograph is used for the first display portion, the burden on the thin film integrated circuit can be reduced as compared with the case where a display device is used. Therefore, a photograph may be used for the first display portion in a thin film integrated circuit device such as an IC card whose size is limited by regulation, such as an IC card.

(Embodiment 3)
In this embodiment, a specific configuration will be described using an IC card which is a thin film integrated circuit device as an example. In the present embodiment, the IC card can be either a contact type having an electrode on the surface, a non-contact type having an antenna inside, a hybrid type combining them, or a dual interface type. In the following description, those formed on the surface of the IC card and visible are indicated by solid lines, and those formed inside the IC card are indicated by dotted lines.

  FIG. 4A shows a contact type IC card 47 having a terminal 50, a first display portion 23, and a second display portion 24. In the contact IC card, an example is shown in which the first display unit and the second display unit are overlapped and combined to display the personal identification number and the password 41. At this time, by providing translucency by the second display, the first display unit and the second display unit can be displayed so as to overlap each other, and the password and password are completed only after the display overlaps.

  4B shows a non-contact type IC card 48, which includes an antenna 42, a current circuit, a thin film integrated circuit region 29 including a CPU, a memory, and the like, a first display unit 23, and a second display unit. 24, and the antenna is connected to the thin film integrated circuit region through a current circuit. The current circuit has a configuration including, for example, a diode and a capacitor, and has a function of converting the AC frequency received by the antenna into DC.

  The manufacturing conditions of the antenna may be set as appropriate. For example, it is formed by etching into a predetermined shape using a wiring material of a thin film integrated circuit, or a conductive paste (specifically, a conductive paste such as silver, copper, or aluminum) by a printing method. ), Or by forming a recess in the second interlayer insulating film, pouring an antenna material, and patterning by etch back. The antenna may be formed at the same time in the same layer as the wiring of the thin film integrated circuit. For example, the gate electrode, the source wiring, the drain wiring, the signal line, the scanning line, or the power supply line included in the thin film integrated circuit may be formed at the same time. At this time, it can be formed of the same material as the wiring of the thin film integrated circuit.

  Then, the first display unit 23 authenticates the user and the second display unit 24 displays personal information 44. A password or password may be displayed. At this time, the display of the second display unit is set so that the first display unit is not seen through to an unnecessary person. For example, the display of the second display unit may be managed by a password.

  Further, FIG. 4C shows a hybrid IC card 49 which includes a terminal 50, an antenna 42, an undercurrent circuit 43, a first display unit 23, and a second display unit 24. Note that the antenna may be formed by the above-described method.

  An example is shown in which the first display unit 23 performs display for personal authentication, and the second display unit 24 displays other multi-purpose displays 45 such as balances and routes, as well as calendars and clocks.

  In the IC card as described above, when a photograph is used for the first display portion, the display of the first display portion can be displayed by using fluorescent ink that emits light by the light from the light emitting device as the second display portion. Can be emphasized. And the display which combined the 1st display part and the 2nd display part is attained. At this time, in the second display portion, it is more preferable to adjust the back surface to an off state (that is, a transparent state) or a light color.

  Note that each type of IC card and the use of the first and second display units may be combined in any manner.

  In the present invention, it is sufficient that the second display unit has a light-transmitting property and the first display unit can be recognized with the first display unit and the second display unit partially overlapping. The display portion or the second display portion may be provided on the entire surface of the thin film integrated circuit device or the portable electronic device. However, in the case of an IC card, it is necessary to do so within the provisions such that a region for providing an opening for posting a photograph is determined due to strength problems.

  For example, as shown in FIG. 5, a face photograph is arranged as the first display unit 23 at a predetermined position of the IC card. A second display unit 24 is provided as a whole, and a multipurpose display such as a password, password, time, or calendar can be performed.

  As described above, since the first display portion and the second display portion are provided so as to overlap with each other in the present invention, a plurality of displays can be performed even with a limited display area. As a result, for example, when displaying certain display information, the area of the display region in the thin film integrated circuit device or the portable electronic device can be reduced.

  Further, the first display unit and the second display unit can be combined to authenticate the user, and the user can be confirmed by the thin film integrated circuit device or the portable electronic device itself. As a result, capital investment for external devices can be reduced. In addition, it is possible to prevent leakage of a password or password from an external device. Further, by combining the first display unit and the second display unit, it is possible to display a complicated password or password.

  Further, since the thin film integrated circuit of the present invention is formed over a wide range of the card, the thin film integrated circuit area can be easily cut when discarded, and unauthorized reuse of the card can be prevented.

  Note that the display portion is stacked in this embodiment mode, and the stacking order of the first display portion and the second display portion may be arbitrarily set.

(Embodiment 4)
In this embodiment, a case will be described in which the second display portion is designed to be larger than the first display portion in a portable electronic device having a thin film integrated circuit formed over a printed circuit board or the like and a display portion.

  FIG. 6A illustrates a PDA that is an example of a portable electronic device, which includes a display area in which a first display portion 60 and a second display portion 61 are stacked, and a control area 62. is doing. In FIG. 6A, the size of the second display portion is set larger than that of the first display portion. Conversely, the size of the first display unit may be larger than that of the second display unit. Note that the second display portion is a passive matrix light-emitting device.

  6B, a first display portion 60 and a second display portion 61 are provided on one surface of a printed circuit board 80, and a thin film integrated circuit region 63 and a signal line driver circuit 64 are provided on the other surface. 2 is a cross-sectional view illustrating a state where a driving circuit unit such as a scanning line driving circuit 65 is provided and the whole is covered with a protective film 66.

  In the present invention, the pixel portion and the driver circuit may be provided on the same surface, but as described above, the display portion (having the first or second display portion) and the driver circuit portion (thin film integrated circuit region). And a signal line driver circuit or a scanning line driver circuit) are formed on different surfaces of the printed circuit board, respectively, which can increase the display area. In this case, the signal line, the scanning line, and the electrode provided on one surface and the driving circuit and the thin film integrated circuit region provided on the other surface are electrically conductively injected into a penetrating portion formed on the printed board. They are connected by a material (connection wiring) 67. Note that in the present invention, a thin film integrated circuit region may be provided in the control region and formed by a manufacturing method other than the thin film integrated circuit.

  FIG. 6C shows one surface of the printed board. The first display section 60 is disposed on one surface, and the signal lines 68 for the second display section 61 and the scanning lines 69 are provided so as to intersect with each other. Note that a second display portion having a light-transmitting property can be provided by using a transparent conductive film for a signal line or a scan line.

  Note that FIG. 6C illustrates a passive matrix light-emitting device; however, an active matrix light-emitting device may also be used. In the case of a passive matrix light-emitting device, a semiconductor element for each pixel is unnecessary and thus has high light-transmitting properties.

  As shown in FIG. 6D, a signal line driver circuit 64, a scanning line driver circuit 65, and a thin film integrated circuit region 63 are provided on the other surface of the printed board. These circuits can be manufactured very thinly by using the thin film integrated circuit of the present invention.

  In this manner, by arranging a circuit or the like on a different surface from the display portion, the display area can be widened.

  And as described above, it is possible to connect using a conductive material injected into a penetrating portion formed in a printed circuit board, or using an anisotropic conductive film (ACF: AnisotropIC Conductive Film), a signal line driving circuit and a signal line, The scanning line driving circuit and the scanning line are connected. Furthermore, a plurality of thin film integrated circuits may be stacked using a flip chip method.

  Finally, a protective film 66 is provided, and a portable electronic device in which the second display portion is provided over the entire surface is completed.

  Thus, the arrangement of the first display portion and the second display portion can be designed freely.

  Although the thin film integrated circuit is described in this embodiment mode, in particular, in a portable electronic device, a silicon wafer is used even if an integrated circuit or a driver circuit is formed using a thin film transistor (TFT) on glass. Alternatively, the transistor may be formed.

  Note that this embodiment can also be applied to a thin film integrated circuit device. Further, as described above, the thin film integrated circuit of the present invention is suitable for a thin film integrated circuit such as an IC card because it is very thin. However, in the case of an IC card which is an example of a thin film integrated circuit device, it is necessary to set the thickness of the printed circuit board or the thickness of the thin film integrated circuit when the thickness is limited by regulation.

(Embodiment 5)
In this embodiment, another method of using the present invention will be described.

  FIG. 9A shows an example in which the present invention is used for taking a photograph. First, a photograph is used for the first display 90 and a dual emission type light emitting device is used for the second display 91 to display comments, time, and a pattern. The control unit 93 is provided with a display power source, an input button, a switching button, and the like. And the comment content can be updated from the input button. Further, in the photograph, what is necessary for display of a dual emission type light emitting device such as a power supply voltage, a drive circuit, and other circuits is appropriately mounted.

  FIG. 9B shows an example of a display sheet using the present invention, which is bonded to a predetermined place. For example, a picture or a photograph is used for the first display 95 and a dual emission type light emitting device is used for the second display 96 to display the contents of the message or e-mail. Further, the first display below the display of the content of the message or e-mail is set to an image such as black, so that the black display of the second display can be performed. Further, the display sheet is appropriately equipped with a power supply voltage, a driving circuit, and other functions necessary for display of a dual emission type light emitting device such as a circuit and a function for receiving. In addition, in order to manufacture a dual emission type light emitting device using the flexible substrate of the present invention, the display sheet may be bonded to a place having a curved surface, or the display sheet may be detachable.

  The present invention is characterized in that the first display unit and the second display unit overlap each other for display. Therefore, the size and shape of the first display unit and the second display unit do not need to be uniform. As described above, the range of use of the present invention is wide and can be used for any product. Further, since the light-emitting device of the present invention can be formed very thin, it can be placed on a product having a curved surface.

(Embodiment 6)
In this embodiment mode, a method for manufacturing a thin film integrated circuit according to the present invention, in which a thin film transistor is formed over a film substrate by peeling and transferring, will be described.

First, as shown in FIG. 7A, a metal film 71 is formed over the first substrate 70. Note that the first substrate only needs to have rigidity enough to withstand a subsequent peeling step. For example, a glass substrate, a quartz substrate, a ceramic substrate, a silicon substrate, a metal substrate, or a stainless steel substrate can be used. As the metal film, an element selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, and Ir, or an alloy material or compound containing the element as a main component A single layer made of a material or a laminate of these can be used. For example, the metal film may be formed by a sputtering method using a metal target. Note that the metal film may be formed to have a thickness of 10 nm to 200 nm, preferably 50 nm to 75 nm.

  Instead of the metal film, a film in which the metal is nitrided (for example, tungsten nitride or molybdenum nitride) may be used. Instead of the metal film, an alloy film of the above metal (for example, an alloy of W and Mo: WxMo1-x) may be used. In this case, a plurality of targets such as a first metal (W) and a second metal (Mo) are used in the film forming chamber, or an alloy target of the first metal (W) and the second metal (Mo). It can form by the sputtering method using this. Furthermore, nitrogen or oxygen may be added to the metal film. For example, nitrogen or oxygen may be ion-implanted into the metal film, or a film formation chamber may be formed by sputtering in a nitrogen or oxygen atmosphere, and a metal nitride material may be used as a target at this time.

  When a metal film is formed using a sputtering method, the film thickness at the peripheral edge of the substrate may be nonuniform. Therefore, it is preferable to remove the peripheral film by dry etching. At that time, since the first substrate is not etched, an insulating film containing nitrogen such as a silicon nitride oxide (SiON or SiNO) film is preferably formed to a thickness of about 100 nm between the first substrate 70 and the metal film 71.

  Thus, by appropriately setting the metal film forming method, the peeling process can be controlled, and the process margin is widened. That is, for example, when a metal alloy is used, the peeling process can be controlled by controlling the composition ratio of each metal of the alloy. Specifically, it is possible to control the heating temperature for peeling and the necessity of heat treatment.

  Thereafter, a layer to be peeled 72 is formed on the metal film 71. This layer to be peeled includes an oxide film containing silicon, a semiconductor film, and an element of a dual emission type light emitting device, and may have an antenna in the case of a non-contact type IC card or the like. In a dual emission type light emitting device, there are many states that can become a layer to be peeled. For example, when peeling is performed in a state where the first transparent conductive film is formed, peeling is performed in a state where a light emitting material is formed, peeling is performed in a state where other elements are formed, and all formed elements are peeled off. Can be a layer.

  An insulating layer containing nitrogen, such as a silicon nitride (SiN) film or a silicon nitride oxide (SiON or SiNO) film, is provided on the lower surface of the peeled layer 72, particularly the lower surface of the semiconductor film, in order to prevent intrusion of impurities and dust from the metal film and the substrate. A film is preferably provided as a base film.

  As the oxide film containing silicon, silicon oxide, silicon oxynitride, or the like may be formed by a sputtering method or a CVD method. Note that the thickness of the oxide film containing silicon is preferably about twice or more that of the metal film. In this embodiment, the silicon oxide film is formed with a thickness of 150 nm to 200 nm by a sputtering method using a silicon target.

  When the oxide film containing silicon is formed, an oxide (metal oxide) 73 containing the metal is formed on the metal film. The metal oxide is an aqueous solution containing sulfuric acid, hydrochloric acid or nitric acid, an aqueous solution in which sulfuric acid, hydrochloric acid or nitric acid is mixed with hydrogen peroxide, or a thin metal oxide formed on the surface of the metal film by treatment with ozone water. Can also be used. Further, as another method, plasma treatment in an oxygen atmosphere or oxidation treatment may be performed by generating ozone by irradiating ultraviolet rays in an oxygen-containing atmosphere, and heating to about 200 to 350 ° C. using a clean oven. May be formed.

  The thickness of the metal oxide may be 0.1 nm to 1 μm, preferably 0.1 nm to 100 nm, and more preferably 0.1 nm to 5 nm.

  Note that an oxide film including silicon, a base film, and the like provided between the semiconductor film and the metal film are collectively referred to as an insulating layer. That is, a metal film, a metal oxide, an insulating layer, and a semiconductor film are stacked, that is, a semiconductor film is provided on one surface of the insulating layer, and a metal oxide and a metal film are provided on the other surface. What is necessary is just to become the structure which can be.

  A predetermined manufacturing process is performed on the semiconductor film to form a semiconductor element, for example, a thin film transistor (TFT). In addition to the thin film transistor, an organic TFT, a thin film diode, and the like are also formed. These semiconductor elements constitute a CPU, a memory, and the like of a thin film integrated circuit, and are used as a switching element for driving a light emitting element and an element for a driving circuit. In order to protect the semiconductor element, a protective film having carbon such as DLC or carbon nitride (CN) or a protective film having nitrogen such as silicon nitride (SiN) or silicon nitride oxide (SiNO or SiON) is provided on the semiconductor element. Is preferably provided.

After forming the layer to be peeled 72 as described above, specifically, after the metal oxide is formed, heat treatment is appropriately performed to crystallize the metal oxide. For example, when W (tungsten) is used for the metal film, when heat treatment is performed at about 400 ° C., preferably 380 to 410 ° C., for example, 400 ° C., the metal oxide of WO ₂ or WO ₃ becomes a crystalline state. Further, when heating is performed after the semiconductor film included in the layer to be peeled 72 is formed, hydrogen in the semiconductor film can be diffused. This hydrogen is considered to change the valence of the metal oxide. Such heat treatment can determine the temperature and further necessity depending on the metal film selected. That is, in order to perform peeling easily, a metal oxide may be crystallized as necessary.

  Further, the heat treatment may be combined with manufacturing a semiconductor element to reduce the number of steps. For example, heat treatment can be performed using a heating furnace or laser irradiation in the case of forming a crystalline semiconductor film.

  Next, as illustrated in FIG. 7B, the layer 72 to be peeled is attached to the second substrate 74 with the first adhesive 75. Note that the second substrate 74 is preferably a substrate having higher rigidity than the first substrate 70. The first adhesive 75 may be a peelable adhesive, for example, an ultraviolet peeling type that peels off by ultraviolet rays, a thermal peeling type that peels off by heat, a water-soluble adhesive that peels off by water, or a double-sided tape.

  Then, the first substrate 70 provided with the metal film 71 is peeled off using physical means (FIG. 7C). Although the drawing is a schematic diagram, it is not described, but the crystallized metal oxide layer or the boundary (interface) between both sides of the metal oxide, that is, the interface between the metal oxide and the metal film or the metal oxide And peeled off at the interface between the layer to be peeled off. In this manner, the layer to be peeled 72 can be peeled from the first substrate 70.

  At this time, in order to perform peeling easily, a part of the substrate may be cut and scratched with a cutter or the like near the peeling interface on the cut surface, that is, near the interface between the metal film and the metal oxide.

  Next, as shown in FIG. 7D, the peeled layer 72 to be peeled is attached to a third substrate 77 to be a transfer body with a second adhesive 76. In the case of manufacturing a thin film integrated circuit device, it is preferable to use a base material of the device as a third substrate and attach it directly. For example, in the case of an IC card on which a photograph is pasted as the first display portion, the peelable layer 72 is pasted on the base material (vinyl chloride or the like) of the IC card with the second adhesive. As the second adhesive 76, an ultraviolet curable resin, specifically, an adhesive such as an epoxy resin adhesive or a resin additive, a double-sided tape, or the like may be used. Further, when the third substrate has adhesiveness, the second adhesive is not necessary.

  As another third substrate material, a flexible film substrate such as paper or a plastic material such as polyethylene terephthalate, polycarbonate, polyarylate, or polyether sulfone can be used. Thereafter, the substrate of the thin film integrated circuit device is used. It may be pasted.

  Next, the first adhesive 75 is removed, and the second substrate 74 is peeled off (FIG. 7E). Specifically, irradiation with ultraviolet light, heating, or washing with water may be performed in order to remove the first adhesive.

  Note that the removal of the first adhesive and the curing of the second adhesive may be performed in one step. For example, the first adhesive and the second adhesive are removed by one heating or ultraviolet irradiation when using a heat-peelable resin and a thermosetting resin, or an ultraviolet-peelable resin and an ultraviolet-curable resin, respectively. And curing. Note that it is necessary to select an adhesive as appropriate in consideration of the translucency of the third substrate.

  Thereafter, a protective film is formed or laminated, and the thin film integrated circuit device of the present invention is completed.

  Note that the metal oxide 73 may be completely removed in the thin film integrated circuit device, or part or most of the metal oxide 73 may be scattered (residual) on the lower surface of the layer to be peeled. If metal oxide remains, it may be removed by etching or the like. Further, at this time, the oxide film containing silicon may be removed.

  In addition, by using the above-described method, a plurality of thin film integrated circuits are formed on a large-sized substrate, so that mass production is possible, so that the cost of a thin film integrated circuit, that is, a thin film integrated circuit device can be reduced. Can do.

  Note that the thin film integrated circuit of the present invention can be manufactured by peeling the layer to be peeled from the first substrate by laser irradiation or removing the first substrate by etching in addition to the method of manufacturing by transfer or peeling described above. You may transfer to.

  As other peeling methods, a method of removing the peeling layer using a hydrofluoric acid-based etching solution or removing the glass substrate by polishing may be employed.

  The thin film integrated circuit of the present invention as described above uses a thin semiconductor film having a film thickness of 250 to 750 nm, preferably 500 nm or less, whereas the film thickness of the integrated circuit made of a silicon wafer is about 50 μm. It becomes very thin to form. For example, in the case of a semiconductor film serving as an active element, a gate insulating film, a gate electrode, an interlayer insulating film, a single layer of wiring, and a protective film, a remarkably thin thin film integrated circuit of 1500 to 3000 nm is formed. be able to. As a result, the thin film integrated circuit of the present invention is particularly suitable for a thin film integrated circuit device such as an IC card.

  In addition, it is not necessary to perform back grind processing that causes cracks and polishing marks unlike ICs manufactured using silicon wafers, and thickness variations also depend on variations in the formation of semiconductor films and the like. Therefore, it is about several hundreds of nanometers at most, and can be remarkably reduced as compared with the variation of several to several tens of micrometers due to the back grinding process.

  Still further, the very thin thin film integrated circuit of the present invention can be stacked. In the case of stacking, electrical connection may be performed by a flip chip method or the like. In particular, when a thin film integrated circuit device having a limited area such as an IC card is manufactured, it is preferable to stack the display portion.

(Embodiment 7)
In this embodiment, a method for manufacturing an EL module included in a dual emission light-emitting device that can be used particularly for the second display portion will be described.

  FIG. 8A shows a cross section of a dual emission EL module. FIG. 8B shows an enlarged view of a stacked structure of light-emitting elements (having an organic compound layer, a first transparent conductive film, and a second transparent conductive film) of an EL module.

  In FIG. 8A, a first substrate 800, a first display portion 801, a metal oxide 802, a base insulating film 803, a TFT 822, a first transparent conductive film (electrode) 805, an insulator (a partition wall, a bank) 806, an organic compound layer (a layer containing an organic compound) 807, a metal thin film 808, a second transparent conductive film (electrode) 809, a protective film 810, a void 811, and a second substrate 812.

  The TFT 822 (p-channel TFT) provided over the first substrate 800 is an element that controls current flowing in the organic compound layer 807, and includes an impurity region 813 that functions as a drain region (or a source region), a channel A formation region 814 and a gate electrode 816 provided over the channel formation region are included. In addition, the drain electrode (or source electrode) 815 connected to the first transparent conductive film 805 and connected to the drain region (or source region) is provided. In addition, a wiring 817 such as a power supply line or a source wiring is formed at the same time in the same process as the drain electrode 815.

  A base insulating film 803 serving as a base insulating film (here, a nitride insulating film as a lower layer and an oxide insulating film as an upper layer) is formed over the first base 800, and is formed between the gate electrode 816 and the semiconductor film. Is provided with a gate insulating film. The interlayer insulating film 804 is formed so as to have an organic material or an inorganic material. Although not shown here, one or more other TFTs (n-channel TFTs or p-channel TFTs) are provided in one pixel. Although a TFT having one channel formation region 814 is shown, it is not particularly limited, and a TFT having a plurality of channels may be used.

  In addition, the top gate type TFT has been described as an example here, but the present invention can be applied regardless of the TFT structure, and is applied to, for example, a bottom gate type (reverse stagger type) TFT or a forward stagger type TFT. It is possible.

Further, the first transparent conductive film 805 serves as an anode (or a cathode) of the light emitting element. As the transparent conductive film, ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In2O3-ZnO), ITO-SiOx in which ₂ to 20% silicon oxide (SiO2) is mixed with indium oxide (ITSO or for convenience) NITO), zinc oxide (ZnO), or the like can be used.

  In addition, an insulator 806 (referred to as a bank, a partition, a barrier, a bank, or the like) is provided to cover an end portion (and the wiring 817) of the first transparent conductive film 805. As the insulator 806, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), or a material thereof Lamination etc. can be used. Note that in this embodiment, an insulator in which a photosensitive organic resin is covered with a silicon nitride film is used. For example, when positive photosensitive acrylic is used as the material of the organic resin, only the upper end portion of the insulator can have a curved surface having a curvature radius, which is preferable. As the insulator, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.

  The organic compound layer 807 is formed by an evaporation method, a coating method, or an inkjet method. In this embodiment mode, the organic compound layer 807 is formed with a vapor deposition apparatus to obtain a uniform film thickness. In order to improve reliability, it is preferable to perform deaeration by performing vacuum heating (100 ° C. to 250 ° C.) immediately before the formation of the organic compound layer 807. For example, in the case of using the vapor deposition method, the vapor deposition is performed in a film formation chamber evacuated to a vacuum degree of 5 × 10 −3 Torr (0.665 Pa) or less, preferably 10 −4 to 10 −6 Pa. At the time of vapor deposition, the organic compound is vaporized by heating in advance and is scattered in the direction of the substrate when the shutter is opened at the time of vapor deposition. The vaporized organic compound is scattered upward and deposited through an opening provided in the metal mask.

  Note that as shown in FIG. 8B, the organic compound layer (also referred to as an EL layer) 807 includes, in order from the anode side, HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL ( An electron transport layer) and an EIL (electron injection layer) are laminated in this order. Typically, CuPc is used as HIL, α-NPD is used as HTL, BCP is used as ETL, and BCP: Li is used as EIL.

  Further, in the case where full-color display is used as the organic compound layer (EL layer) 807, specifically, materials that emit red (R), green (G), and blue (B) light are deposited using a deposition mask, respectively. Alternatively, it may be selectively formed as appropriate by an ink jet method or the like. Specifically, CuPc or PEDOT is used as HIL, α-NPD is used as HTL, BCP or Alq3 is used as ETL, and BCP: Li or CaF2 is used as EIL. In addition, for example, EML may be Alq3 doped with a dopant corresponding to each of R, G, and B emission colors (DCM for R, DMQD for G, etc.). In addition, it is not limited to the laminated structure of the said organic compound layer.

  FIG. 10 illustrates a more specific laminated structure of the organic compound layer. In the case of forming the organic compound layer 807 that emits red light, for example, CuPc is formed to 30 nm and α-NPD is formed to 60 nm. Using the mask, 40 nm of Alq3 to which DCM2 and rubrene are added is formed as a red light emitting layer, 40 nm of BCP is formed as an electron transport layer, and 1 nm of BCP to which Li is added is formed as an electron injection layer. When forming an organic compound layer that emits green light, for example, CuPc is formed to 30 nm, α-NPD is formed to 60 nm, and then coumarin 545T is added as a green light-emitting layer using the same vapor deposition mask. The formed Alq3 is formed to 40 nm, BCP is formed to 40 nm as an electron transport layer, and BCP doped with Li is formed to 1 nm as an electron injection layer. In the case of forming a layer containing an organic compound that emits blue light, for example, CuPc is formed to 30 nm, α-NPD is formed to 60 nm, and then the bis [2- (2- (2- Hydroxyphenyl) benzoxazolate] zinc: Zn (PBO) 2 is formed to a thickness of 10 nm, BCP is formed to a thickness of 40 nm as an electron transport layer, and BCP doped with Li is formed to a thickness of 1 nm as an electron injection layer.

  Among such organic compound layers of each color, common CuPc and α-NPD can be formed on the entire surface of the pixel portion. The mask can also be shared by each color. For example, after forming the red organic compound layer, the mask can be shifted to form the green organic compound layer, and the mask can be shifted again to form the blue organic compound layer. . In addition, what is necessary is just to set the formation order of the organic compound layer of each color suitably.

  In the case of white light emission, which is an example of monochromatic light emission, full color display may be performed by separately providing a color filter, a color conversion layer, or the like. FIG. 11 shows an example in which a white light emitting element is provided with a color conversion layer or a color filter. 11A shows a case where a white light emitting element and a color filter are used, FIG. 11B shows a case where a white light emitting element and a color conversion layer are used, and FIG. 11C shows a white light emitting element, a color filter and a color conversion layer. It is an example in the case of using. As described above, a color filter may be provided instead of the color conversion layer, or a color conversion layer and a color filter may be provided.

A color filter and a color conversion layer for white light emitted upward may be attached to each other after being provided on the second substrate. In addition, a color filter or a color conversion layer for white light emitted downward can be formed through an insulating film after the drain electrode (or source electrode) 815 is formed. After that, an insulating film and a second transparent conductive film are formed in this order on the color filter and the color conversion layer, and the drain electrode (or source electrode) 815 and the second transparent conductive film have contacts formed on the insulating film. It may be connected via.

  When used as a display device or a lighting device that performs only simple display, monochromatic light emission (typically white light emission) may be used. For example, white light emission may be formed using a material in which an electron-transporting 1,3,4-oxadiazole derivative (PBD) is dispersed in hole-transporting polyvinyl carbazole (PVK). Further, white light emission can be obtained by dispersing 30 wt% PBD as an electron transporting agent and dispersing an appropriate amount of four kinds of dyes (TPB, coumarin 6, DCM1, Nile red). It is also possible to obtain white light emission as a whole by appropriately selecting an organic compound film emitting red light, an organic compound film emitting green light, and an organic compound film emitting blue light and mixing them.

  In addition, a second transparent conductive film 809 functioning as a cathode (or an anode) is provided over the organic compound layer 807. As a material for the second transparent conductive film, an alloy such as MgAg, MgIn, AlLICaF2, and CaN is formed very thin so as to have translucency. Alternatively, an element belonging to Group 1 or Group 2 of the periodic table and aluminum may be formed very thin so as to have translucency by a co-evaporation method. When an Al film is used for the second transparent conductive film 809, the material in contact with the organic compound layer 807 can be formed using a material other than an oxide, and the reliability of the light-emitting device can be improved. Further, a light-transmitting layer (film thickness: 1 nm to 5 nm) made of CaF2, MgF2, or BaF2 may be formed as a cathode buffer layer before forming an aluminum film of 6 nm to 10 nm. Furthermore, as with the first transparent conductive film, ITO (indium tin oxide alloy), indium zinc oxide alloy (In2O3-ZnO), zinc oxide (ZnO), or the like can be used.

  Further, in order to make the transmittance, the absorptance, and the reflectance of the light emitted from the upper surface and the light emitted from the lower surface the same, and to reduce the resistance of the cathode, a film having a thickness of 6 nm to 10 nm is provided. A transparent conductive film (ITO (indium oxide tin oxide alloy), indium oxide zinc oxide alloy (In2O3-ZnO), zinc oxide (ZnO), etc.) on an alloy of MgAg, MgIn, AlLICaF2, CaN, etc. formed with a thickness May be stacked in a film thickness range of 240 nm to 290 nm or 380 nm to 500 nm. As a result, it is possible to eliminate a difference in display between the light emission from the upper surface and the light emission from the lower surface. Furthermore, in order to reduce the resistance of the cathode, an auxiliary electrode may be provided on the second transparent conductive film 809 in a region that does not become a light emitting region. Further, when the cathode is formed, a resistance heating method by vapor deposition is used, and the cathode may be selectively formed using a vapor deposition mask.

  In the present embodiment, the second transparent conductive film is formed using ITO.

  Further, the light-transmitting protective film 810 is formed by a sputtering method or an evaporation method, and protects the second transparent conductive film 809 and prevents moisture from entering. The protective film 810 is mainly formed of a silicon nitride film, a silicon oxide film, a silicon oxynitride film (SiNO film (composition ratio N> O) or SiON film (composition ratio N <O)) obtained by sputtering or CVD, and carbon. A thin film (for example, a DLC film or a CN film) as a component can be used. These protective films have a high blocking effect against moisture.

  Further, as the protective film, a protective layer formed by stacking a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film may be formed. For example, after forming the cathode, a first inorganic insulating film is formed to 5 nm to 50 nm, a stress relaxation film (such as a layer containing an organic compound) having hygroscopicity and transparency is formed to 10 nm to 100 nm by vapor deposition, The second inorganic insulating film may be formed again with a thickness of 5 nm to 50 nm. Further, two or more layers of the stress relaxation film and the inorganic insulating film may be repeatedly stacked.

  The protective film 810 thus formed is optimal as a protective film for a light-emitting element having an organic compound layer as a light-emitting layer. Note that the second base material 812 and the first base material 800 are bonded to each other with a sealing material containing a gap material for securing the gap between the substrates.

In this embodiment a glass substrate, a quartz substrate as the material constituting the second substrate 812, FRP (Fiberglass-Reinforced Plast ic s), PVF ( polyvinyl fluoride), Mylar, plastic made of polyester, acrylic, or the like A substrate or a coating film can be used.

  In this embodiment mode, an example in which a space 811 formed between a pair of substrates is filled with an inert gas is shown, but a transparent sealing material may be filled between the pair of substrates. The sealing material to be filled is not particularly limited as long as it is a light-transmitting material. Typically, an ultraviolet curing or thermosetting epoxy resin may be used. Further, by filling the transparent sealing material between the pair of substrates, the entire transmittance can be improved as compared with the case where the space between the pair of substrates is filled with an inert gas.

  In the present embodiment, the timing of peeling or the like is such that after the first transparent conductive film is formed, peeling is performed and transferred onto the substrate provided with the first display portion, and then an organic compound layer is formed. The second base material may be adhered or the light emitting layer may be formed, and the second base material may be adhered, and then peeled off and transferred onto the base material provided with the first display portion. . In other words, the dual emission type light emitting device of the present invention is not limited to the timing of performing peeling or transferring described in the fifth embodiment. However, considering the strength of each layer and the interface state, after forming the first transparent conductive film, it is peeled off and transferred to a substrate such as a thin film integrated circuit device, and then the light emitting material is formed. It is better to film.

  In the case where the thin film integrated circuit or the light-emitting device of the present invention is formed by peeling, the metal oxide 802 is sometimes formed below the base insulating film 803. As described above, the metal oxide may be scattered or removed.

  By providing the double-sided emission type EL module formed in this way as the second display portion, the first electrode and the second electrode have translucency, so that light is emitted to both the upper surface and the lower surface. In addition, since the light-emitting device itself has translucency, the first display portion disposed below can be recognized. In addition, by using the thin film integrated circuit of the present invention, a very thin dual emission EL module can be formed, which is suitable for an IC card.

(Embodiment 8)
For the first display, a still image (still image) or a moving image (moving image) can be used. The second display can use a still image or a moving image. Therefore, in this embodiment, a combination of the first display portion and the second display portion having a light-transmitting property will be described.

  First, a case where a still image is used for the first display and a moving image is used for the second display will be described. For the first display, as described above, a photograph, a liquid crystal display device, or a light emitting device (such as an EL element) is used. A display device having a self-luminous element), a still image displayed using electronic paper or the like can be used. For the second display, a dual emission light-emitting device that displays a moving image can be used. In the case where a still image is used for the second display, the screen of the dual emission type light emitting device may be a still image.

  When a moving image is used for the first display, a liquid crystal display device, a light emitting device (a display device having a self light emitting element such as an EL element), electronic paper, or the like can be used. At this time, when a moving image is used for the second display, the screen of the dual emission type light emitting device may be a moving image, and when a still image is used, the screen of the dual emission type light emitting device may be a still image.

  That is, in the present invention, either the still image or the moving image may be stacked in any order, as long as a plurality of display portions are stacked and the display portion provided above has translucency.

  As described above, the present invention can perform a plurality of displays in a display region of a thin film integrated circuit device or a portable electronic device, and can provide a lot of information.

The figure which shows the structure which laminates | stacks the display part of this invention. 1 is a diagram showing a configuration of a thin film integrated circuit device of the present invention. 1 is a diagram showing a configuration of a thin film integrated circuit device of the present invention. The figure which shows IC card carrying this invention. The figure which shows IC card carrying this invention. FIG. 11 illustrates a portable electronic device of the present invention. 4A and 4B illustrate a manufacturing process of a thin film integrated circuit of the present invention. FIG. 6 illustrates a light-emitting device having translucency according to the present invention. The figure which shows the example of goods which mount this invention. FIG. 6 illustrates a light-emitting device having translucency according to the present invention. FIG. 6 illustrates a light-emitting device having translucency according to the present invention.

Claims (5)

A substrate;
A first display unit provided in a counterbore of the base material;
An insulating layer provided on the substrate and the first display unit;
A thin film integrated circuit provided on the insulating layer and having, as active regions, a plurality of semiconductor films separated from each other;
A second display unit provided on the first display unit via the insulating layer and connected to the thin film integrated circuit,
The semiconductor element having a switching function provided in the pixel portion of the second display portion is formed on the base material simultaneously with the thin film integrated circuit,
The second display unit is a dual emission type light emitting device,
An IC card characterized by combining the first display unit and the second display unit to display a combination of characters, figures and symbols . 2. The IC card according to claim 1 , wherein the thin film integrated circuit includes a signal line driver circuit and a scanning line driver circuit of the second display portion. According to claim 1 or 2, IC card, wherein the first display unit and the second display unit and having a display area of the same degree. In any one of claims 1 to 3, wherein the first display unit is an IC card, characterized in that a still image is displayed. In any one of claims 1 to 4, IC card and the second display unit, characterized in that to display the video.

Images