JP4490403B2 - Light emitting device - Google Patents

Description

  The present invention relates to a driving method of an electronic display device formed by forming an electroluminescence (EL) element and a thin film transistor (hereinafter referred to as TFT) on a substrate. In particular, the present invention relates to a light-emitting device using a semiconductor element (an element using a semiconductor thin film). Further, the present invention relates to an electronic device using the light emitting device for a display portion.

  Note that in this specification, an EL element refers to both an element that uses light emission (fluorescence) from a singlet exciton and an element that uses light emission (phosphorescence) from a triplet exciton.

  In recent years, light-emitting devices having EL elements as self-luminous elements have been actively developed. Unlike the liquid crystal display device, the light emitting device is a self-luminous type. The EL element has a structure in which an EL layer is sandwiched between a pair of electrodes (anode and cathode). There are two types of light-emitting devices: passive matrix type and active matrix type. The active matrix type is suitable for those that require high-speed operation because of the increase in the number of pixels and the display of moving images as resolution increases. ing.

  Each pixel of the active matrix organic EL panel is provided with a storage capacitor (Cs) section for holding a voltage. An actual pixel configuration example is shown in FIG. FIG. 12B shows an equivalent circuit. As disclosed in Patent Document 1, the Cs portion is large, and the light emission area of the organic EL is accordingly reduced. In addition to the Cs portion, the shape, number, and arrangement of TFTs, wirings, contacts, partition walls, etc. constituting the pixel are factors that reduce the light emitting area. By reducing the light emitting area, the current density is increased and the reliability of the organic EL is remarkably lowered.

In addition, if the aperture is made to have a complicated shape in order to forcibly increase the aperture ratio, shrinkage of the organic EL light emitting portion may be promoted. Here, the shrinkage of the EL light emitting part is not a state where the EL layer is physically contracted, but the effective area of the EL element (the area of the EL element emitting light) is gradually reduced from the end part. The state that goes. In other words, when the shape of the opening becomes complicated, the length of the end becomes longer with respect to the area of the opening, and thus the shrink is promoted.

JP-A-8-234683

FIG. 20 shows an example of a structure of a pixel portion of an active matrix EL display device.
A portion surrounded by a dotted line frame 2300 is a pixel portion, and has a plurality of pixels therein.
A portion surrounded by a dotted frame 2310 is one pixel.

  Gate signal lines (G1, G2,..., Gy) to which selection signals are input from the gate signal line driving circuit are connected to the gate electrode of the switching TFT 2301 included in each pixel. Further, one of the source region and the drain region of the switching TFT 2301 included in each pixel is connected to the source signal lines (S1 to Sx) to which signals are input from the source signal line driver circuit, and the other is connected to the gate electrode of the driving TFT 2302 Has been. One of a source region and a drain region of the driving TFT 2302 included in each pixel is connected to a current supply line (V1, V2,..., Vx), and the other is connected to one electrode of an EL element 2304 included in each pixel. Yes. Further, a capacitor 2303 for holding the gate-source voltage of the driving TFT 2302 may be provided in each pixel during the display period.

  The EL element 2304 includes an anode, a cathode, and an EL layer provided between the anode and the cathode. In the case where the anode of the EL element 2304 is connected to the source region or the drain region of the driving TFT 2302, the anode of the EL element 2304 serves as a pixel electrode and the cathode serves as a counter electrode. On the other hand, when the cathode of the EL element 2304 is connected to the source region or drain region of the driving TFT 2302, the cathode of the EL element 2304 serves as a pixel electrode and the anode serves as a counter electrode.

  Note that in this specification, the potential of the counter electrode is referred to as a counter potential. A power source that applies a counter potential to the counter electrode is referred to as a counter power source. A potential difference between the potential of the pixel electrode and the potential of the counter electrode is an EL drive voltage, and this EL drive voltage is applied to the EL layer sandwiched between the pixel electrode and the counter electrode.

  As a gradation display method of such a light emitting device, there are an analog gradation method and a digital gradation method. As the digital gradation method, there are an area gradation method and a time gradation method.

  A value when Cs is provided in each of the analog gradation method and the digital gradation method will be described.

  In the case of the analog gradation method, generally, an analog video signal is written to each pixel once in one frame period. An analog video signal is input to each pixel by an analog voltage or an analog current. In the case of an analog voltage, the written analog voltage is stored as it is in the holding capacity of each pixel, and one frame period (the length of one frame period is 16.66 ms when the frame frequency is 60 Hz) is not held. Must not. In the case of an analog current, the written current is once converted into an analog voltage in each pixel. The analog voltage must be held for one frame period.

  In the case of the digital gradation method, as described above, it is necessary to write a digital video signal a plurality (n) times in one frame period. For 4-bit gradation, n = 4 times or more, and for 6-bit gradation, n = 6 times or more. Therefore, it is necessary to hold for the longest subframe among n divided frame periods.

  Next, the relationship between the driving TFT and the EL element will be described.

  As shown in FIG. 15A, a driving TFT 1505 and an EL element 1506 are connected in series between the current supply line and the opposed power supply of each pixel. The current flowing through the EL element 1506 is an operating point at the intersection of the Vd-Id curve of the driving TFT in FIG. 15B and the VI curve of the EL element, and the source-drain voltage of the driving TFT 1505 at that time A current flows according to the voltage between both electrodes of the EL element 1505.

When the gate-source voltage (| V _GS |) of the driving TFT 1505 is larger than the source-drain voltage (| V _DS |) by a threshold voltage or more, the driving TFT 1505 operates in a linear region (constant voltage driving). If it is smaller than that, the driving TFT 1505 operates in a saturation region (constant current driving).

When the driving TFT 1505 is operated in the linear region, that is, when the operation of the driving TFT 1505 at the operating point is included in the linear region, | V _DS | of the driving TFT 1505 is a voltage (| V between both electrodes of the EL element 1506). It is much smaller than _EL |), and the characteristic variation of the driving TFT 1505 hardly affects the current flowing through the EL element 1506. However, if the resistance of the EL element 1506 changes due to a temperature change or a change over time, the current also changes under the influence. For example, as shown in FIG. 16A, when the EL element 1506 deteriorates and its voltage-current characteristic changes from 1601 to 1602, the operating point also changes from 1603 to 1604.
At this time, if the driving TFT 1505 operates in the linear region, the value of the current flowing through the EL element 1506 decreases by ΔI _D with the movement of the operating point. Accordingly, the luminance is lowered.

On the other hand, when the driving TFT 1505 is operated in the saturation region, even if the voltage-current characteristics of the EL element 1506 change from 1611 to 1612 due to deterioration of the EL element, as shown in FIG. Since the drain current (I _DS ) of the driving TFT 1505 is constant, a constant current flows through the EL element 1506 even if the operating point changes from 1613 to 1614. For this reason, the variation in luminance is smaller than when the driving TFT 1505 is operated in the linear region.

  Depending on the setting of the channel length and channel width of the driving TFT, the characteristics of the driving TFT and the EL element, and the driving voltage, all the operating points can be brought into the saturation region.

However, when the driving TFT 1505 is operated in the saturation region, the value of the current flowing through the EL element 1506 is determined only by the V _GS -I _DS characteristics of the TFT. If it varies, it is reflected in the variation of the light emission luminance of the EL element 1506 as it is. In addition, a change in V _GS during the holding period greatly affects the flowing current. I _DS in the saturation region is expressed by the formula (1).

Due to the off-leakage current of the switching TFT 1504, the charge of the gate electrode of the driving TFT 1505 leaks to the source signal line 1501, and the | V _GS | of the driving TFT changes accordingly, so that I _DS also changes. Therefore, a capacitor for compensating for the V _GS loss of the driving TFT due to charge leakage from the switching TFT 1504 is required. This is called a holding capacity. The size of the storage capacitor is determined by the relationship between the V _GS -I _DS characteristics of the driving TFT and the change amount ΔI _EL of the current value that accompanies the change in the luminance of the EL element 1506 by one gradation. As can be seen from equation (1), proportional to the square of the I _DS is _{V GS, | V GS | I} DS to changes in is very sensitive. A change amount ΔV _GS of V _GS allowed for the driving TFT 1505 is obtained from ΔI _EL . The required storage capacitance is determined from the _off- leakage current value I _off of the switching TFT and the retention time using equations (2) and (3). Here, Δt is a minute time, and ΔV _GS is an increment of the gate-source voltage of the driving TFT 1505.

  Compared to the digital gradation method in which writing operation is performed a plurality of times in one frame period, the analog gradation method can be written only once in one frame, so that the retention time becomes longer and a larger retention capacity is required.

  In addition, for the reasons described above, it is necessary to keep the channel length of the driving TFT of each pixel long, and the aperture ratio decreases as the driving TFT size increases.

The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a light-emitting device that realizes a high aperture ratio while variation in driving TFT hardly affects the image quality of an image.

  In order to solve the problem, the present invention takes the following measures.

  In the light emitting device of the present invention, the pixel portion is not provided with a large Cs portion, the channel length / channel width of the driving TFT is increased, and the capacitance (channel) between the gate electrode of the driving TFT and the channel formation region is increased. Capacity) is used as Cs.

 As shown in FIG. 18, the TFT electrode includes a gate electrode 1804, a source electrode 1807, and a drain electrode 1808 with a gate insulating film 1803 interposed therebetween. Therefore, gate-source capacitances 1811 and 1812 are provided between the terminals, between the gate electrode 1804, the source electrode 1807, and the source region 1802a, and between the gate electrode 1804, the drain electrode 1808, and the drain region 1802b, a gate-drain capacitance 1813, 1814 is essentially present.

  When a gate-source voltage necessary for turning on the TFT is applied between the gate electrode 1804 and the source region 1802a of the TFT, a channel 1810 is formed in the channel formation region 1809 and a drain current flows. At this time, a channel capacitance 1815 is generated between the gate electrode 1804 and the channel.

  Since the channel region changes depending on the voltage conditions of the gate electrode 1804, the source electrode 1807, and the drain electrode 1808, the channel capacitance also changes.

  The change of the channel region depending on the voltage condition will be described with reference to FIG. Here, a P-channel TFT is used as an example.

  As shown in FIG. 17B, when the TFT is in an OFF state, a channel is not formed in the channel formation region 1704, so that the channel capacity can be ignored.

  Next, as shown in FIG. 17C, when the TFT operates in a linear region, a channel 1706 is formed on the entire surface between the source and the drain, and holes are distributed so as to decrease linearly from the source to the drain. To do. Since holes exist on the entire surface of the semiconductor in the channel formation region, sufficient channel capacity can be secured.

  Next, as shown in FIG. 17D, when the TFT operates in the saturation region, the channel 1706 is formed, but there is no distribution of holes on the semiconductor surface on the drain side. However, since holes exist on the semiconductor surface on the source side, a sufficient capacity can be secured between the gate and the source.

  Further, when a pixel is laid out, a wiring is disposed under the partition and a driving TFT is disposed under the wiring, so that the aperture ratio can be increased even when the size of the driving TFT is increased. In the case of the three-transistor type, the switching TFT and the erasing TFT are arranged in a straight line, so that the aperture ratio can be increased and a simple opening can be obtained. Here, the linear shape does not necessarily have to be strictly a straight line. Even if the EL element has the same luminance by increasing the aperture ratio, the current density is lowered and the deterioration rate is slowed. In addition, the simple opening makes it less susceptible to EL element shrinkage.

  The configuration of the present invention will be described below.

  The light-emitting device of the present invention is a light-emitting device including a plurality of pixels each having a light-emitting element connected to a driving transistor, a switching TFT, and an erasing TFT, between the gate and the source of the driving transistor. The capacitor for holding the voltage is provided by a gate electrode of the driving transistor, a semiconductor layer, and an insulating film provided therebetween.

  The light emitting device of the present invention is a light emitting device comprising a plurality of pixels each having a light emitting element connected to a driving transistor, a switching TFT, and an erasing TFT, between the gate and the source of the driving transistor. The capacitor for holding voltage includes a semiconductor layer that forms a gate electrode and a source region of the driving transistor, or a semiconductor layer that forms a gate electrode and a drain region of the driving transistor, and the gate electrode and the semiconductor It is characterized by being provided by an insulating film provided between the layers.

  The light emitting device of the present invention has a plurality of pixels each provided with a light emitting element, and each of the plurality of pixels includes a source signal line, first and second gate signal lines, a current supply line, and a switching transistor. And a erasing transistor, and a driving transistor, wherein a capacitance for holding a gate-source voltage of the driving transistor is between a gate electrode of the driving transistor and a channel formation region. It is characterized by being provided by the capacity between.

  The light emitting device of the present invention has a plurality of pixels each provided with a light emitting element, and each of the plurality of pixels includes a source signal line, first and second gate signal lines, a current supply line, and a switching transistor. And a erasing transistor, and a driving transistor, wherein the capacitance for holding the gate-source voltage of the driving transistor is between the gate electrode and the source region of the driving transistor Or a capacitor between the gate electrode and the drain region of the driving transistor.

  The light emitting device of the present invention is a light emitting device comprising a plurality of pixels each having a light emitting element connected to a driving transistor, a switching TFT, and an erasing TFT, and the source signal line and the current supply line Each of the driving transistors is arranged at a position overlapping with an insulating film formed at a position separating adjacent light emitting areas of the plurality of pixels.

  The light emitting device of the present invention has a plurality of pixels each provided with a light emitting element, and each of the plurality of pixels includes a source signal line, first and second gate signal lines, a current supply line, and a switching transistor. And the driving signal transistor, wherein the source signal line, the current supply line, and the driving transistor are all formed at positions that separate adjacent light emitting areas of the plurality of pixels. It is characterized by being disposed at a position overlapping with the insulating film.

  In the light-emitting device of the present invention, the switching transistor and the erasing transistor include a certain point in the source region and a drain region of the switching transistor, and a certain point and drain region in the source region of the erasing transistor. A certain point is arranged at a position included in one straight line.

  In the light-emitting device of the present invention, the driving transistor is arranged at a position overlapping a part of the source signal line or a part of the current supply line.

  In the light emitting device of the present invention, the semiconductor layer forming the channel region of the driving transistor is formed in a U shape, an S shape, a spiral shape, or a meander shape.

In the light-emitting device of the present invention, when the channel length of the driving transistor is L and the channel width is W, L × W> 200 μm ² .

In the light emitting device of the present invention, when the gate-source voltage of the driving transistor is V _GS , the source-drain voltage is V _DS , and the threshold voltage is V _th , | V _DS | <| V _GS | It is characterized by being driven so that − | V _th |.

In the light emitting device of the present invention, when the gate-source voltage of the driving transistor is V _GS , the source-drain voltage is V _DS , and the threshold voltage is V _th , | V _DS | ≧ | V _GS | It is characterized by being driven so that − | V _th |.

  In the light emitting device of the present invention, the driving transistor is driven so that a gate-source voltage is 4 V or more and 14 V or less.

  In the light-emitting device of the present invention, when the channel length of the driving transistor is L and the channel width is W, L> 5W.

In the light-emitting device of the present invention, when the channel length of the driving transistor is L and the channel width is W, L / W in the driving transistor included in each pixel exhibiting R, G, and B emission colors is Each is different.

  As in the present invention, by increasing the size of the driving TFT and increasing the channel length L with respect to the channel width W, a TFT having excellent current characteristics in the saturation region can be obtained for driving each pixel. It can be used as a TFT, and variations in the driving TFT can hardly affect the light emission luminance of the EL element. In addition, a high aperture ratio can be expected by arranging the storage capacitor at a position that is not covered by the channel capacitance of the driving TFT and overlaps with the partition outside the light emitting area.

[Embodiment 1]
First, a description will be given with reference to FIG. Here, the light-emitting device performs full-color display, and one of the source region and the drain region of the driving TFT of the pixel (R) that emits red light is connected to the current supply line for red. One of the source region and the drain region of the driving TFT of the pixel (G) that emits green light is connected to the green current supply line, and the source of the driving TFT of the pixel (B) that emits blue light One of the region and the drain region is connected to the blue current supply line. The EL elements for RGB are separately applied in stripes.

 In FIG. 1, the partition wall covers a region other than the light emitting area 5007, and the partition wall provided in the direction parallel to the stripe in the partition wall 5020 serves as a coating margin. At this time, a place where there is a partition wall for the separate coating margin cannot be used for the light emitting area, so the source signal line 5001 and the current supply line 5003 are arranged under the partition wall. Next, a driving TFT 5005 is disposed under the source signal line 5001 and the current supply line 5003. At this time, it may be under a source signal line or a current supply line of an adjacent pixel.

  In such an arrangement, the gate electrode of the driving TFT is arranged so as to overlap a part of the current supply line. Since the current supply line is always fixed at a constant potential, the capacitance between the gate electrode of the driving TFT and the current supply line can be used as a part of Cs.

 The driving TFT 5005 also serves as a storage capacitor, and further has a large channel length × channel width in order to suppress variation in characteristics. However, by disposing the driving TFT 5005 under the partitioning margin partition wall, it is possible to avoid a decrease in the aperture ratio even when the channel length × channel width is increased.

[Embodiment 2]
Next, in the case where the TFT constituting the pixel is a three-transistor type, the aperture ratio can be increased by arranging the switching TFT and the erasing TFT in a straight line, excluding the driving TFT, and a simpler opening. Can be made. The effect of shrinkage can be reduced by making the openings simpler and more rectangular.

[Embodiment 3]
Also, when determining the channel length and channel width of the driving TFT, the goal is to make the channel length x channel width as large as possible. When operating the driving TFT in the saturation region, the channel length should be longer than the channel width. , V _GS needs to be a value that is not easily affected by the threshold voltage. By increasing the channel length, the saturation region characteristic of the driving TFT becomes flatter. At this time, if V _GS is excessively increased, power consumption increases and the withstand voltage of the driving TFT becomes a problem. Therefore, the channel length and the channel width are set so that | V _GS | is between 4V and 14V. Adjust it.

  According to the first to third embodiments, by increasing the size of the driving TFT and increasing the channel length L with respect to the channel width W, TFTs with excellent current characteristics in the saturation region can be obtained for each pixel. It can be used as a driving TFT, and variations in the driving TFT can hardly affect the light emission luminance of the EL element.

  Furthermore, a high aperture ratio can be expected by disposing the storage capacitor at a position that is not covered by the channel capacitance of the driving TFT and overlaps with the partition wall outside the light emitting area.

[Embodiment 4]
In EL elements, generally, the light emission efficiency is different for each of R, G, and B, and therefore the current value required to obtain uniform luminance is also different. Therefore, when the current capabilities of the driving TFTs are all the same, it is necessary to make a difference in Vgs in order to make a difference in the current value. Therefore, when the difference in light emission efficiency between the EL elements of R, G, and B is large, the difference in Vgs becomes large and voltage setting may be difficult.

In this case, the current capability may be adjusted by changing the channel length / channel width of the driving TFT for each of R, G, and B. Also, at this time, the aperture ratio is the same for RGB by adjusting the drive TFT channel length and channel width so that the drive TFT does not leave the region of the separate partition wall. Further, by adjusting the channel length × channel width of each of RGB, a sufficient channel capacity can be secured.

  Examples of the present invention will be described below.

[Example 1]
FIG. 13 shows measured values of the gate-source capacitance and the gate-drain capacitance of the P-channel TFT. V _GS is set to −6V, and V _DS is changed from 16V to −16V. In a region where V _DS is lower than about −5V, it is a saturated region. The sum of FIGS. 13A and 13B is the capacitance of the driving TFT.

  As described with reference to FIG. 17C, when the driving TFT is driven in a linear region, a channel is formed on the entire surface of the semiconductor, so that a sufficient capacitance can be secured.

  When the driving TFT is driven in the saturation region, a channel is not formed on the drain region side as described in FIG. 17C, and the gate-drain capacitance is 0 as shown in FIG. 13B. A value close to. However, since a channel is formed on the source region side, the gate-source capacitance can be sufficiently covered as shown in FIG. Accordingly, when it is desired to drive the driving TFT in the saturation region, a sufficient channel capacity can be secured by using a P-channel type for the driving TFT.

 From the above description, the aperture ratio can be increased by using the channel capacitance of the driving TFT without providing a large Cs portion in each pixel. In addition, since the channel length × channel width is increased, the variation in the crystallinity of the semiconductors constituting the driving TFT is averaged, thereby reducing the Ion variation in the element itself.

Even when the driving TFT is driven in the saturation region, the Vgs-Ids characteristic variation of the driving TFT in each pixel becomes a problem. In that case, the saturation characteristic in the saturation region is improved by making the channel length sufficiently larger than the channel width while keeping the current flowing in the EL element. On the other hand, since the current value supplied to the EL decreases by increasing the channel length, a desired current is supplied to the EL element by increasing V _GS . Therefore, when V _GS is sufficiently higher than the threshold value, V _GS is less susceptible to the threshold value variation, and the I _DS variation can be further reduced. If the saturation characteristic is good by increasing the channel length, _IDS is substantially constant in the saturation region, so that the same amount of current is supplied to the EL element even if the resistance changes due to deterioration of the EL element.

  FIG. 14 shows variations in measured Ids of TFTs in which channel length × channel width is increased and the channel length is sufficiently increased with respect to the channel width.

| V _GS | was fixed to 5 V and | V _DS | to 8 V, and I _DS was measured using a plurality of elements with different channel lengths and channel widths. As can be seen from FIG. 14, the variation in I _DS can be suppressed by increasing the area of the channel formation region (channel length × channel width). Further, when | V _GS | 5V and 8V in FIG. 14 are compared, it can be seen that when V _GS greatly exceeds V _th , variations in I _DS can be further suppressed.

[Example 2]
Here, the configuration and layout of a two-transistor pixel will be described with reference to FIG.

 1 includes a source signal line 5001, a gate signal line 5002, a current supply line 5003, a switching TFT 5004, a driving TFT 5005, a pixel electrode 5006, and a partition wall other than the light emitting area 5007, and the gate of the switching TFT 5004 The electrode is connected to the gate signal line 5002, the source side is connected to the source signal line 5001, and the drain side is connected to the gate electrode of the driving TFT 5005. The source side of the driving TFT 5005 is connected to the current supply line 5003, and the drain side is connected to the pixel electrode 5006.

 Of the partition walls that cover areas other than the light emitting area 5007, the partition walls provided between the adjacent left and right pixels serve as a separate margin required for separately coloring RGB. The width of the partition provided between the adjacent left and right pixels is preferably about 30 μm.

 At this time, since the partition wall for the separate coating margin cannot be used as a light emitting area, the source signal line 5001 and the current supply line 5003 are arranged under a width of 30 μm. Next, a driving TFT 5005 is disposed under the source signal line 5001 and the current supply line 5003. At this time, it may be under a source signal line or a current supply line of an adjacent pixel.

 The storage capacitor can also serve as a channel capacitor formed of the gate insulating film 5015 between the semiconductor layer 5014 and the gate electrode 5016 of the driving TFT 5005.

At this time, with a digital gradation having a short retention time, the retention time is 1 ms, the driving TFT Ioff = 1 pA, and the change amount ΔVgs of the driving TFT Vgs when the light emission luminance of the EL element changes by one gradation is 0. It is about 02V. From equation (3), the required storage capacity at that time is 50 fF. When the thickness of the gate insulating film 5015 is 120 nm and the relative dielectric constant is 4, the channel capacity is approximately 60 fF with channel length × channel width = 200 μm ² . Therefore, in order to make a sufficient capacity, it is desirable that the channel length × channel width of the driving TFT 5005 be 200 μm ² or more.

 Further, the larger the channel length × channel width of the driving TFT 5005 is, the smaller the variation of the element itself is. Therefore, it is preferable to aim to increase as much as possible.

In the case where the driving TFT 5005 is driven in a saturation region, it is preferable that the channel length is made larger than the channel width so that Vgs is hardly affected by the threshold value. At this time, the channel length / channel width is desirably 5 or more. By increasing the channel length, the saturation region characteristic of the driving TFT becomes flatter. However, if V _GS is too large, power consumption increases and the withstand voltage of the driving TFT becomes a problem. Therefore, the channel length and channel width are adjusted so that | V _GS | is between 4V and 14V. Good.

  In order to increase the channel length of the driving TFT 5005, it is preferable that the driving TFT 5005 be straightened in a vertical direction like the semiconductor layer 5014. Without decreasing the aperture ratio, the channel length of the driving TFT 5005 can be increased and the channel width can be increased to some extent.

  If the aperture ratio is high, the current density for the EL element is lowered, leading to a longer life, and the opening has a simple shape, so that it is less susceptible to shrinkage.

  Although the switching TFT 5004 is a double gate in the drawing, it may be a single gate or three or more multi-gates.

FIG. 2A illustrates an example in which a semiconductor layer having a different patterning shape is used instead of the semiconductor layer in FIG. FIG. 2B shows a cross section between α and α ′ in FIG. Like the driving TFT 5105, the semiconductor layer may meander in the vertical direction.
When the semiconductor layer has such a shape, the channel length of the driving TFT 5105 can be further increased without decreasing the aperture ratio.

  FIG. 3A illustrates an example in which a semiconductor layer having a different patterning shape is used instead of the semiconductor layer in FIG. FIG. 3B shows a cross section between α and α ′ in FIG. The semiconductor layer may be U-shaped like the driving TFT 5205. With such a shape of the semiconductor layer, the channel length of the driving TFT 5205 can be increased and the channel width can be increased to some extent without decreasing the aperture ratio.

FIG. 4A illustrates an example in which a semiconductor layer having a different patterning shape is used instead of the semiconductor layer in FIG. FIG. 4B shows a cross section between α and α ′ in FIG. The semiconductor layer may have a meander shape like the driving TFT 5305.
Here, meander has the meaning of “meander: winding and flowing”, and meander shape refers to a state in which the shape of the semiconductor layer is winding. With such a shape of the semiconductor layer, the channel length of the driving TFT 5305 can be increased and the channel width can be increased to some extent without decreasing the aperture ratio.

[Example 3]
Here, the configuration and layout of a three-transistor pixel will be described with reference to FIG.

  An erasing transistor 5506 for SES driving is added, a second gate signal line 5503 for inputting an erasing signal is connected to the gate electrode, a source electrode and a current supply line 5504 are connected, and a drain electrode is switched. The drain electrode of the TFT 5505 is connected to the gate electrode of the driving TFT 5507.

  In the case of the three-transistor type, two TFTs, a switching TFT 5505 and an erasing TFT 5506, are arranged side by side and linearly between the first gate signal line 5502 and the second gate signal line 5503. The drain region of the switching TFT 5505 and the drain region of the erasing TFT 5506 may be overlapped. At this time, one point of the source region of the switching TFT 5505, one point of the drain region, one point of the source region of the erasing TFT 5506 and one point of the drain region are arranged on one straight line.

  By arranging as described above, the aperture ratio can be increased, and the opening can also be made a simple shape.

FIG. 6A illustrates an example in which a semiconductor layer having a different patterning shape is used instead of the semiconductor layer in FIG. FIG. 6B shows a cross section between α and α ′ in FIG. A semiconductor layer may meander in the vertical direction like the driving TFT 5607.
When the semiconductor layer has such a shape, the channel length of the driving TFT 5607 can be further increased without decreasing the aperture ratio.

  FIG. 7A illustrates an example in which a semiconductor layer having a different patterning shape is used instead of the semiconductor layer in FIG. FIG. 7B shows a cross section between α and α ′ in FIG. The semiconductor layer may be U-shaped like the driving TFT 5707. With such a shape of the semiconductor layer, the channel length of the driving TFT 5707 can be increased and the channel width can be increased to some extent without decreasing the aperture ratio.

FIG. 8A illustrates an example in which a semiconductor layer having a different patterning shape is used instead of the semiconductor layer in FIG. In FIG. 8A, FIG. 8B shows a cross section between α and α ′. A semiconductor layer may have a meander shape like the driving TFT 5807.
With such a shape of the semiconductor layer, the channel length of the driving TFT 5807 can be increased and the channel width can be increased to some extent without decreasing the aperture ratio.

  FIG. 10A illustrates an example in which a semiconductor layer having a different patterning shape is used instead of the semiconductor layer in FIG. FIG. 10B shows a cross section between α and α ′ in FIG. If the size of the semiconductor layer of the driving TFT is set to 5907, and the storage capacitor is not sufficient only by the gate capacitance of the driving TFT, the storage capacitor portion 5910 may be formed. By forming the storage capacitor 5910 below the partition wall 5920, a sufficient storage capacitor can be obtained without decreasing the aperture ratio.

  Further, in the pixel having the structure shown in Embodiment 2 and this embodiment, the driving TFT is operated in the saturation region, so that the gate TFT of the driving TFT can be connected regardless of the source-drain voltage of the driving TFT. The current value supplied to the EL element can be controlled only by the voltage between the sources. In this case, since the driving TFT can function as a constant current source, there is no need to add a current source circuit to a driving circuit which is integrally formed around the pixel portion of the light emitting device or supplied externally. Can also contribute to space saving.

[Example 4]
As shown in FIG. 9A, when a light emitting device is used as a display portion of an electronic device such as a mobile phone, it is built in the form of a module 901. Here, the module 901 indicates a form in which a light emitting device is connected to a substrate on which a signal processing LSI, a memory, and the like for driving the light emitting device are mounted.

The module 901 is shown as a block diagram in FIG. The module 901 includes a power supply unit 911, a signal control unit 912, an FPC 913, and a light emitting device 914.
The power supply unit 911 generates and supplies power with a plurality of desired voltage values to the source signal line drive circuit, the gate signal line drive circuit, the light emitting element, and the like from the power supplied from the external battery. The signal control unit 912 receives a video signal and a synchronization signal, converts various signals so that the light emitting device 901 can process the signals, and drives a source signal line driver circuit and a gate signal line driver circuit. The clock signal is generated.

  Although the module 901 shown in this embodiment is formed independently of the light emitting device 914, the power supply unit 911, and the signal control unit 912, they may be formed integrally on a substrate.

  Next, FIG. 11 illustrates a detailed configuration of the light-emitting device 914 included in the module 901 illustrated in FIG.

  The light-emitting device includes a pixel portion 1003, a source signal line driver circuit 1004, gate signal line driver circuits 1005 and 1006, an FPC 1007, and the like over a substrate 1001. The counter substrate 1002 may be a transparent material such as glass or a metal material. A space between the substrate 1001 and the counter substrate 1002 may be sealed with a filler or the like, and a desiccant or the like may be sealed to prevent deterioration of the EL element due to moisture.

  FIG. 11B shows a top view. A pixel portion 1003 is disposed in the central portion of the substrate, and a source signal line driver circuit 1004 and gate signal line driver circuits 1005 and 1006 are disposed in the periphery thereof. Around the source signal line driver circuit 1004, a current supply line 1011, a counter electrode contact 1013, and the like are arranged. The counter electrode of the EL element is formed on the entire surface of the pixel portion, and a counter potential is applied through the FPC 1007 by the counter electrode contact 1013. Signals for driving the source signal line driver circuit 1004, the gate signal line driver circuits 1005 and 1006, and power supply are supplied from the outside through the FPC 1007.

  In addition, a sealant 1014 for attaching the substrate 1001 and the counter substrate 1002 overlaps part of the source signal line driver circuit 1004 and the gate signal line driver circuits 1005 and 1006 as illustrated in FIG. It may be formed. In this way, a narrow frame of the light emitting device can be expected.

[Example 5]
In this example, an example in which a light-emitting device is manufactured using the present invention will be described with reference to FIGS.

  FIG. 19 is a top view of a light-emitting device formed by sealing an element substrate on which a TFT is formed with a sealing material, and FIG. 19B is a cross-sectional view taken along line AA ′ of FIG. FIG. 19C is a cross-sectional view taken along line BB ′ of FIG.

  A sealant 4009 is provided so as to surround the pixel portion 4002 provided over the substrate 4001, the source signal line driver circuit 4003, and the first and second gate signal line driver circuits 4004a and 4004b. In addition, a sealing material 4008 is provided over the pixel portion 4002, the source signal line driver circuit 4003, and the first and second gate signal line driver circuits 4004a and 4004b. Therefore, the pixel portion 4002, the source signal line driver circuit 4003, and the first and second gate signal line driver circuits 4004a and 4004b are sealed with the filler 4210 by the substrate 4001, the sealant 4009, and the sealant 4008. ing. The sealant 4009 may be provided so as to overlap with part of the source signal line driver circuit 4003 and the first and second gate signal line driver circuits 4004a and 4004b.

  In addition, the pixel portion 4002, the source signal line driver circuit 4003, and the first and second gate signal line driver circuits 4004a and 4004b provided over the substrate 4001 include a plurality of TFTs. In FIG. 19B, a TFT (here, an N-channel TFT and a P-channel TFT are illustrated) 4201 and a pixel included in the source signal line driver circuit 4003 formed over the base film 4010 are typically shown. A TFT 4202 included in the portion 4002 is illustrated.

  An interlayer insulating film (planarization film) 4301 is formed on the TFTs 4201 and 4202, and a pixel electrode (anode) 4203 electrically connected to the drain of the TFT 4202 is formed thereon. As the pixel electrode 4203, a transparent conductive film having a large work function is used. As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Moreover, you may use what added the gallium to the said transparent conductive film.

  An insulating film 4302 is formed over the pixel electrode 4203, and an opening is formed over the pixel electrode 4203 in the insulating film 4302. In this opening, an organic light emitting layer 4204 is formed on the pixel electrode 4203. A known organic light emitting material or inorganic light emitting material can be used for the organic light emitting layer 4204. The organic light emitting material includes a low molecular (monomer) material and a high molecular (polymer) material, either of which may be used.

  As a method for forming the organic light emitting layer 4204, a known vapor deposition technique or coating technique may be used. The structure of the organic light emitting layer may be a laminated structure or a single layer structure by freely combining a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, or an electron injection layer.

  On the organic light emitting layer 4204, a cathode 4205 made of a light-shielding conductive film (typically a conductive film containing aluminum, copper or silver as a main component or a laminated film of these with another conductive film) is formed. The In addition, it is desirable to remove moisture and oxygen present at the interface between the cathode 4205 and the organic light emitting layer 4204 as much as possible. Therefore, it is necessary to devise a method in which the organic light emitting layer 4204 is formed in a nitrogen or rare gas atmosphere and the cathode 4205 is formed without being exposed to oxygen or moisture. In this embodiment, the above-described film formation can be performed by using a multi-chamber type (cluster tool type) film formation apparatus. The cathode 4205 is given a predetermined voltage.

  As described above, the light emitting element 4303 including the pixel electrode (anode) 4203, the organic light emitting layer 4204, and the cathode 4205 is formed. A protective film 4303 is formed over the insulating film 4302 so as to cover the light emitting element 4303. The protective film 4303 is effective in preventing oxygen, moisture, and the like from entering the light emitting element 4303.

  Reference numeral 4005a denotes a lead wiring connected to the power supply line, which is connected to the first electrode of the TFT 4202. The lead wiring 4005 a passes between the sealant 4009 and the substrate 4001 and is electrically connected to the FPC wiring 4301 included in the FPC 4006 through the anisotropic conductive film 4300.

  As the sealing material 4008, a glass material, a metal material (typically a stainless steel material), a ceramic material, or a plastic material (including a plastic film) can be used. As the plastic material, an FRP (Fiberglass-Reinforced-Plastics) plate, a PVF (polyvinyl fluoride) film, a mylar film, a polyester film, or an acrylic resin film can be used. A sheet having a structure in which an aluminum foil is sandwiched between PVF films or mylar films can also be used.

  However, when the light emission direction from the light emitting element is directed toward the cover material, the cover material must be transparent. In that case, a transparent material such as a glass plate, a plastic plate, a polyester film or an acrylic film is used.

As the filler 4103, in addition to an inert gas such as nitrogen or argon, an ultraviolet curable resin or a thermosetting resin can be used. PVC (polyvinyl chloride), acrylic, polyimide, epoxy resin, silicon resin, PVB (Polyvinyl butyral) or EVA (ethylene vinyl acetate) can be used.
In this example, nitrogen was used as the filler.

  In order to expose the filler 4103 to a hygroscopic substance (preferably barium oxide) or a substance capable of adsorbing oxygen, a recess 4007 is provided on the surface of the sealing material 4008 on the substrate 4001 side to adsorb the hygroscopic substance or oxygen. A possible substance 4207 is placed. In order to prevent the hygroscopic substance or the substance 4207 capable of adsorbing oxygen from scattering, the concave part cover material 4208 holds the hygroscopic substance or the substance 4207 capable of adsorbing oxygen in the concave part 4007. Note that the concave cover material 4208 has a fine mesh shape, and is configured to allow air and moisture to pass therethrough but not a hygroscopic substance or a substance 4207 capable of adsorbing oxygen. By providing the hygroscopic substance or the substance 4207 capable of adsorbing oxygen, deterioration of the light-emitting element 4303 can be suppressed.

  As shown in FIG. 19C, the conductive film 4203a is formed so as to be in contact with the lead wiring 4005a at the same time as the pixel electrode 4203 is formed.

  The anisotropic conductive film 4300 has a conductive filler 4300a. By thermally pressing the substrate 4001 and the FPC 4006, the conductive film 4203a on the substrate 4001 and the FPC wiring 4301 on the FPC 4006 are electrically connected by the conductive filler 4300a.

[Example 6]
In this example, a manufacturing process of the light-emitting device having the structure shown in Examples 2 and 3 will be described with reference to FIGS. Note that only the pixel portion will be described in the description, but the manufacturing process is not limited to this in the driver circuit portion, and description thereof is omitted here.

  First, as shown in FIG. 22A, a base film made of a silicon oxide film, a silicon nitride film, or a silicon oxynitride film over a substrate made of glass such as barium borosilicate glass or alumino borosilicate glass (see FIG. (Not shown). Thereafter, the crystalline semiconductor film obtained by crystallizing the semiconductor film having an amorphous structure using a laser crystallization method or a known thermal crystallization method is patterned into a desired shape to obtain island-shaped semiconductor layers 2201 and 2202 ( FIG. 22 (A)).

  Subsequently, a gate insulating film (not shown) that covers the island-like semiconductor layers 2201 and 2202 is formed. Thereafter, a conductive film for forming a gate electrode is formed using an element selected from Ta, W, Ti, Mo, Al, Cu, or the like, or an alloy material or a compound material containing the element as a main component. After that, patterning is performed in a desired shape to obtain gate electrodes 2203 and 2204 (2203 also serves as a gate signal line) (FIG. 22B).

  Subsequently, an insulating film (not shown) that also serves to planarize the substrate surface is formed, and a pixel electrode 2205 is formed thereon. The pixel electrode 2205 is a reflective electrode when the display surface is on the front side of the figure, and is a transparent electrode having light transmittance when the display surface is on the back side of the figure. The material of the former reflective electrode is MgAg or the like, and the latter transparent conductive film is typically ITO or the like. The pixel electrode 2205 also has a desired shape by patterning after a film made of the material is formed.

  Thereafter, contact holes 2206 reaching the semiconductor layers 2201 and 2202 and the gate electrode 2204 are opened, and wirings 2207 to 2209 (of which 2207 is a source signal line and 2208 is a current supply line) are formed. Here, the wiring 2209 and the pixel electrode 2206 are in contact with each other so as to overlap each other (FIG. 22C).

  Subsequently, a partition wall (not shown) is formed between adjacent pixels, and a portion to be the light emitting area 2210 is opened by etching (FIG. 22D). Thereafter, an EL layer is formed in the opening to complete.

[Example 7]
Since a light-emitting device using a light-emitting element is a self-luminous type, it has excellent visibility in a bright place and a wide viewing angle compared to a liquid crystal display. Therefore, it can be used for display portions of various electronic devices.

  As an electronic device using the light emitting device of the present invention, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a notebook type personal computer, a game device, A portable information terminal (mobile computer, mobile phone, portable game machine, electronic book, etc.), an image playback device equipped with a recording medium (specifically, a recording medium such as a Digital Versatile Disc (DVD), etc.) A device provided with a display capable of displaying). In particular, it is desirable to use a light-emitting device for a portable information terminal that often has an opportunity to see a screen from an oblique direction because the wide viewing angle is important. Specific examples of these electronic devices are shown in FIGS.

  FIG. 21A illustrates an EL display including a housing 3001, a support base 3002, a display portion 3003, a speaker portion 3004, a video input terminal 3005, and the like. The light emitting device of the present invention can be used for the display portion 3003. Since the light-emitting device is a self-luminous type, a backlight is not necessary, and a display portion thinner than a liquid crystal display can be obtained. The light emitting element display device includes all information display devices such as a personal computer, a TV broadcast receiver, and an advertisement display.

  FIG. 21B shows a digital still camera, which includes a main body 3101, a display portion 3102, an image receiving portion 3103, operation keys 3104, an external connection port 3105, a shutter 3106, and the like. The light emitting device of the present invention can be used for the display portion 3102.

  FIG. 21C illustrates a laptop personal computer, which includes a main body 3201, a housing 3202, a display portion 3203, a keyboard 3204, an external connection port 3205, a pointing mouse 3206, and the like. The light emitting device of the present invention can be used for the display portion 3203.

  FIG. 21D illustrates a mobile computer, which includes a main body 3301, a display portion 3302, a switch 3303, operation keys 3304, an infrared port 3305, and the like. The light emitting device of the present invention can be used for the display portion 3302.

  FIG. 21E shows a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 3401, a housing 3402, a display portion A3403, a display portion B3404, a recording medium (DVD or the like). A reading unit 3405, operation keys 3406, a speaker unit 3407, and the like are included. Although the display portion A 3403 mainly displays image information and the display portion B 3404 mainly displays character information, the light-emitting device of the present invention can be used for the display portions A, B 3403, and 3404. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.

  FIG. 21F illustrates a goggle type display (head mounted display), which includes a main body 3501, a display portion 3502, and an arm portion 3503. The light emitting device of the present invention can be used for the display portion 3502.

  FIG. 21G shows a video camera, which includes a main body 3601, a display portion 3602, a housing 3603, an external connection port 3604, a remote control receiving portion 3605, an image receiving portion 3606, a battery 3607, an audio input portion 3608, operation keys 3609, and the like. . The light-emitting device of the present invention can be used for the display portion 3602.

  FIG. 21H illustrates a mobile phone, which includes a main body 3701, a housing 3702, a display portion 3703, an audio input portion 3704, an audio output portion 3705, operation keys 3706, an external connection port 3707, an antenna 3708, and the like. The light emitting device of the present invention can be used for the display portion 3703. Note that the display portion 3703 can suppress current consumption of the mobile phone by displaying white characters on a black background.

  If the light emission luminance of the organic light emitting material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like and used in a front type or rear type projector.

  In addition, the electronic devices often display information distributed through electronic communication lines such as the Internet and CATV (cable television), and in particular, opportunities to display moving image information are increasing. Since the organic light emitting material has a very high response speed, the light emitting device is preferable for displaying moving images.

  Further, since the light emitting part consumes power in the light emitting device, it is desirable to display information so that the light emitting part is minimized. Therefore, when a light emitting device is used for a display unit mainly including character information, such as a portable information terminal, particularly a mobile phone or a sound reproduction device, it is driven so that character information is formed by the light emitting part with the non-light emitting part as the background. It is desirable to do.

  As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. In addition, the electronic apparatus of this embodiment may use the light emitting device having any structure shown in Embodiments 1 to 6.

FIG. 14 illustrates a layout example of a pixel portion manufactured using the present invention. FIG. 14 illustrates a layout example of a pixel portion manufactured using the present invention. FIG. 14 illustrates a layout example of a pixel portion manufactured using the present invention. FIG. 14 illustrates a layout example of a pixel portion manufactured using the present invention. FIG. 14 illustrates a layout example of a pixel portion manufactured using the present invention. FIG. 14 illustrates a layout example of a pixel portion manufactured using the present invention. FIG. 14 illustrates a layout example of a pixel portion manufactured using the present invention. FIG. 14 illustrates a layout example of a pixel portion manufactured using the present invention. FIG. 14 illustrates an example in which a light-emitting device and a peripheral circuit are modularized and used in an electronic device. FIG. 14 illustrates a layout example of a pixel portion manufactured using the present invention. The figure which shows the outline of a light-emitting device. The figure which shows the example of the 2 transistor type pixel laid out by the conventional method. The figure which shows the channel capacity of TFT measured. It shows the I _DS variation in the actually measured TFT. FIG. 6 illustrates operating points of an EL element. 10A and 10B are diagrams for explaining an EL element deterioration and an influence on luminance in a case where an operation range of a driving TFT is a linear region and a saturation region. 6A and 6B illustrate a behavior of charge around a channel during TFT operation. 4A and 4B illustrate a capacitor element in each part of a TFT. The top view and sectional drawing of a light-emitting device. The figure which shows the matrix of 2 transistor type pixels. FIG. 11 illustrates an example of an electronic device to which the present invention is applicable. 4A and 4B simply illustrate a manufacturing process of a pixel portion.

Claims (10)

A pixel electrode, a driving transistor, a switching transistor, an erasing transistor, a first gate signal line, a second gate signal line, and a current supply line;
The gate of the pre-Symbol driving transistor, one of a source region and a drain region of said switching transistor, one of a source region and a drain region of the erasing transistor are electrically connected,
One of the source region or drain region of the driving transistor is electrically connected to the current supply line and the other of the source region or drain region of the erasing transistor,
The other of the source region or the drain region of the driving transistor is electrically connected to the pixel electrode,
The current supply line is arranged to intersect with the first gate signal line and the second gate signal line,
The drive transistor is disposed at a position below the current supply line and overlapping the current supply line,
The switching transistor and the erasing transistor are disposed in a region between the first gate signal line and the second gate signal line,
The light emitting device, wherein the switching transistor and the erasing transistor are linearly arranged . In claim 1,
The light emitting device is characterized in that the channel region of the driving transistor has a U-shape. In claim 1,
The light emitting device is characterized in that the channel region of the driving transistor has an S-shape. In claim 1,
The light emitting device is characterized in that the channel region of the driving transistor has a meander shape. In any one of Claims 1 thru | or 4,
One point of the source region of the erasing transistor, one point of the drain region of the erasing transistor, one point of the source region of the switching transistor, and one point of the drain region of the switching transistor are aligned on one straight line. A light-emitting device characterized by being arranged in the above. In any one of Claims 1 to 5,
The first gate signal line is electrically connected to the gate of the switching transistor;
The light emitting device, wherein the second gate signal line is electrically connected to a gate of the erasing transistor. In any one of Claims 1 thru | or 6,
The light emitting device according to claim 1, wherein a channel length of the driving transistor is longer than a channel width. In any one of Claims 1 thru | or 7,
Having a partition wall covering a region other than the light emitting area,
The light-emitting device, wherein the driving transistor and the current supply line are provided at a position overlapping the partition wall. In any one of Claims 1 thru | or 8 ,
When the channel length of the driving transistor is L and the channel width is W, L> 5W. In any one of Claims 1 thru | or 9 ,
When the channel length of the driving transistor is L and the channel width is W, L × W> 200 μm ² .

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