JP4365907B2 - Sample separation method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention provides a sampleSeparation methodIn particular, it is suitable for separating a sample having a separation layer inside by the separation layer.Separation methodAbout.
[0002]
[Prior art]
As a substrate having a single crystal Si layer on an insulating layer, a substrate (SOI substrate) having an SOI (silicon on insulator) structure is known. A device employing this SOI substrate has many advantages that cannot be achieved with a normal Si substrate. As this advantage, the following are mentioned, for example.
(1) Dielectric separation is easy and suitable for high integration.
(2) Excellent radiation resistance.
(3) The stray capacitance is small, and the operation speed of the element can be increased.
(4) No well process is required.
(5) Latch-up can be prevented.
(6) A completely depleted field effect transistor can be formed by thinning.
[0003]
Since the SOI structure has various advantages as described above, research on its formation method has been advanced for several decades.
[0004]
As the SOI technology, an SOS (silicon on sapphire) technology for forming Si on a single crystal sapphire substrate by heteroepitaxial growth using a CVD (chemical vapor deposition) method has been known. Although this SOS technology has been evaluated as the most mature SOI technology, a large amount of crystal defects are generated due to lattice mismatch at the interface between the Si layer and the underlying sapphire substrate, and the aluminum Si layer constituting the sapphire substrate. Practical use has not progressed due to reasons such as mixing into the substrate, the price of the substrate, and the delay in increasing the area.
[0005]
Following SOS technology, SIMOX (separation by ion implanted oxygen) technology appeared. With respect to this SIMOX technology, various methods have been tried with the aim of reducing crystal defects and manufacturing costs. As this method, a buried oxide layer is formed by implanting oxygen ions into a substrate, two wafers are bonded together with an oxide film sandwiched, and one wafer is polished or etched to form a thin single crystal Si layer. After leaving the oxide film on the surface of the Si substrate on which the oxide film is formed, hydrogen ions are implanted to a predetermined depth and bonded to the other substrate, and then thinned on the oxide film by heat treatment or the like. For example, a method of peeling the bonded substrate (the other substrate) while leaving the single crystal Si layer may be used.
[0006]
The present applicant has disclosed a new SOI technology in Japanese Patent Laid-Open No. 5-21338. In this technique, a first substrate in which a non-porous single crystal layer (including a single crystal Si layer) is formed on a single crystal semiconductor substrate on which a porous layer is formed is used as a second substrate through an insulating layer. After bonding, both the substrates are separated by the porous layer, and the non-porous single crystal layer is transferred to the second substrate. This technology has excellent film thickness uniformity of the SOI layer, can reduce the crystal defect density of the SOI layer, has good surface flatness of the SOI layer, and does not require expensive special specification manufacturing equipment It is excellent in that an SOI substrate having an SOI film in the range of several hundreds of μm to 10 μm can be manufactured with the same manufacturing apparatus.
[0007]
Further, the present applicant, in JP-A-7-302889, after bonding the first substrate and the second substrate, separating the first substrate from the second substrate without destroying, Then, the technique of making the surface of the isolate | separated 1st board | substrate smooth and forming a porous layer again, and reusing this was disclosed. This technique has the excellent advantage that the first substrate can be used without waste, so that the manufacturing cost can be greatly reduced and the manufacturing process is simple.
[0008]
[Problems to be solved by the invention]
In the above technique, when separating a substrate obtained by bonding two substrates (hereinafter referred to as a bonded substrate) with a porous layer, it is desirable to separate them with good reproducibility without damaging the substrates.
[0009]
  The present invention has been made in view of the above background, and is suitable, for example, for preventing a defect from occurring when a sample such as a substrate having a separation layer therein is separated.SeparationIt aims to provide a method.
[0010]
[Means for Solving the Problems]
A separation method according to the first aspect of the present invention is a separation method for separating a sample having a separation layer in a part with the separation layer, wherein a predetermined region of the separation layer is an unseparated region. A first separation step in which the sample is partially separated by the separation layer, and a force from a predetermined direction against the unseparated region of the sample processed in the first separation step. A second separation step of completely separating the sample by acting, and in the first separation step, the separation is performed while rotating the sample about an axis orthogonal to the separation layer. In the second separation step, the sample is partially separated by spraying a fluid toward the layer, and the sample is held without being rotated, and the sample generated by the partial separation process By injecting fluid toward the gap Remaining the separating unseparated region is.
The separation method according to the second aspect of the present invention is a separation method for separating a sample having a separation layer therein by the separation layer, wherein a predetermined region of the separation layer is an unseparated region. A first separation step in which the sample is partially separated by the separation layer, and a force from a predetermined direction against the unseparated region of the sample processed in the first separation step. A second separation step that completely separates the sample by operating the sample, and in the first separation step, the sample is rotated while rotating the sample about an axis orthogonal to the separation layer. The sample is partially separated by ejecting a fluid toward the separation layer, and in the second separation step, the rotation of the sample is substantially stopped and a partial separation process is performed. By ejecting fluid toward the gap between the generated samples Separating the unseparated region remaining in the sample.
A separation method according to a third aspect of the present invention is a separation method in which a sample having a separation layer therein is separated by the separation layer, and a predetermined region of the separation layer is defined as an unseparated region. A first separation step in which the sample is partially separated by the separation layer, and a force from a predetermined direction against the unseparated region of the sample processed in the first separation step. A second separation step of completely separating the sample by acting, and in the second separation step, by inserting a wedge into the gap of the sample generated by a partial separation process, Separate the sample completely.
  Others described in the specificationThe separation device is a separation device that separates a sample having a separation layer therein by the separation layer, and leaves a predetermined region of the separation layer as an unseparated region. A first separation means for partially separating the sample by a layer; and a force is applied from a predetermined direction to the unseparated region of the sample treated by the first separation means to completely separate the sample. Second separating means for separatingRu.
[0011]
  the aboveofIn the separation apparatus, for example, the sample is preferably a plate-like member having a fragile layer as the separation layer.
[0012]
  the aboveofIn the separation apparatus, for example, it is preferable that the first separation unit partially separates the sample so as to leave a substantially circular region as the unseparated region.
[0013]
  the aboveofIn the separation apparatus, for example, it is preferable that the first separation unit partially separates the sample so that a substantially circular region as the unseparated region is left in a substantially central portion of the separation layer. .
[0014]
  the aboveofIn the separation apparatus, for example, the first separation means ejects the fluid toward the separation layer while rotating the sample around an axis orthogonal to the separation layer. The second separation means separates the sample, holds the sample without rotating, and ejects fluid toward the gap of the sample generated by the partial separation process. It is preferable to isolate the remaining unseparated region.
[0015]
  the aboveofIn the separation apparatus, for example, the first separation means may eject the fluid toward the separation layer of the sample while rotating the sample around an axis orthogonal to the separation layer. The sample is partially separated, and the second separation means substantially stops the rotation of the sample and ejects fluid toward the gap of the sample generated by the partial separation process. The unseparated region remaining in the sample is preferably separated.
[0016]
  the aboveofIn the separation apparatus, for example, it is preferable that the second separation unit completely separates the sample by inserting a wedge into a gap between the samples generated by the partial separation process.
[0017]
  the aboveofIn the separation apparatus, for example, the unseparated region remaining after the processing by the first separation unit is preferably smaller than a region separated by the first separation unit.
[0018]
  the aboveofIn the separation apparatus, for example, the sample is preferably formed by laminating a first plate member having a fragile layer therein and a second plate member.
[0019]
  the aboveofIn the separation device, for example, the fragile layer is preferably a porous layer.
[0020]
  the aboveofIn the separation device, for example, the first plate-like member is a semiconductor substrate.
[0021]
  the aboveofIn the separation device, for example, the first plate-like member is formed by forming a porous layer on one surface of a semiconductor substrate and forming a non-porous layer on the porous layer.
[0022]
  the aboveofIn the separation device, for example, the non-porous layer includes a single crystal semiconductor layer.
[0023]
  Others described in the specificationThe separation device is a separation device that separates a sample having a separation layer therein by the separation layer, and a driving mechanism that rotates the sample about an axis orthogonal to the separation layer of the sample. And a jetting unit that jets fluid toward the separation layer, and first, while rotating the sample by the drive mechanism, leaving a predetermined region of the separation layer as an unseparated region, The sample is partially separated by the separation layer by the fluid from the ejection unit, and then the rotation of the sample is substantially stopped and the fluid in the unseparated region is separated by the fluid from the ejection unit. Separate the part completely to separate the sampleRu.
[0024]
  the aboveofIn the separation apparatus, for example, the sample is preferably a plate-like member having a fragile layer as the separation layer.
[0025]
  the aboveofIn the separation apparatus, for example, it is preferable that a substantially circular region is left as the unseparated region when the sample is partially separated.
[0026]
  the aboveofIn the separation apparatus, for example, in the partial separation process of the sample, it is preferable to leave a substantially circular region as the unseparated region in a substantially central portion of the separation layer.
[0027]
  the aboveofIn the separation apparatus, for example, the unseparated region remaining after the partial separation process is preferably smaller than the region separated by the partial separation process.
[0028]
  the aboveofIn the separation apparatus, for example, the sample is preferably formed by laminating a first plate member having a fragile layer therein and a second plate member.
[0029]
  the aboveofIn the separation device, for example, the fragile layer is preferably a porous layer.
[0030]
  the aboveofIn the separation device, for example, the first plate-like member is a semiconductor substrate.
[0031]
  the aboveofIn the separation device, for example, the first plate-like member is formed by forming a porous layer on one surface of a semiconductor substrate and forming a non-porous layer on the porous layer.
[0032]
  the aboveofIn the separation device, for example, the non-porous layer includes a single crystal semiconductor layer.
[0033]
  The present inventionofSeparation apparatus is a separation apparatus for separating a sample having a separation layer therein by the separation layerIsA first separation mechanism that partially separates the sample with the separation layer and leaving a predetermined region of the separation layer as an unseparated region; and a separation process by the first separation mechanism. A second separation mechanism for completely separating the sample by applying a force to the gap generated in the sample from a predetermined direction.Ru.
[0034]
  the aboveofIn the separation device, for example, the first separation mechanism partially ejects the sample by ejecting a fluid toward the separation layer while rotating the sample about an axis orthogonal to the separation layer. It is preferable to separate them.
[0035]
  the aboveofIn the separation apparatus, for example, the second separation mechanism preferably completely separates the sample by inserting a wedge into the gap of the sample.
[0036]
  the aboveofThe separation apparatus preferably further includes, for example, a transport robot that transports the sample processed by the first separation mechanism to the second separation mechanism.
[0037]
  the aboveofThe separation apparatus preferably further includes, for example, an alignment mechanism that aligns the sample with respect to the first separation mechanism or the second separation mechanism.
[0038]
  the aboveofIn the separation apparatus, for example, the unseparated region remaining after the processing by the first separation mechanism is preferably smaller than the region separated by the first separation mechanism.
[0039]
  the aboveofIn the separation apparatus, for example, the sample is preferably formed by laminating a first plate member having a fragile layer therein and a second plate member.
[0040]
  the aboveofIn the separation device, for example, the fragile layer is preferably a porous layer.
[0041]
  the aboveofIn the separation device, for example, the first plate-like member is a semiconductor substrate.
[0042]
  the aboveofIn the separation device, for example, the first plate-like member is formed by forming a porous layer on one surface of a semiconductor substrate and forming a non-porous layer on the porous layer.
[0043]
  the aboveofIn the separation device, for example, the non-porous layer includes a single crystal semiconductor layer.
[0044]
  Others described in the specificationThe separation apparatus is a separation apparatus that separates a sample having a separation layer therein by the separation layer, and the separation layer is configured to leave a predetermined region of the separation layer as an unseparated region. A holding mechanism for holding a part of the sample partially separated by the holding mechanism and substantially stopping the sample, and applying a force from a predetermined direction to the unseparated region of the sample held by the holding mechanism. With a separation mechanism to completely separateRu.
[0045]
  the aboveof36. The separation apparatus according to claim 35, wherein, for example, the sample is a plate-like member having a layer having a fragile structure as the separation layer.
[0046]
  the aboveofIn the separation apparatus, for example, it is preferable that the separation mechanism completely separates the sample by ejecting a fluid toward a gap between the samples formed by a partial separation process.
[0047]
  the aboveofIn the separation apparatus, for example, the separation mechanism preferably completely separates the sample by inserting a wedge into a gap between the samples formed by a partial separation process.
[0048]
  the aboveofIn the separation apparatus, for example, the unseparated region is preferably smaller than the already separated region.
[0049]
  the aboveofIn the separation apparatus, for example, the sample is preferably formed by laminating a first plate member having a fragile layer therein and a second plate member.
[0050]
  the aboveofIn the separation device, for example, the fragile layer is preferably a porous layer.
[0051]
  the aboveofIn the separation device, for example, the first plate-like member is a semiconductor substrate.
[0052]
  the aboveofIn the separation device, for example, the first plate-like member is formed by forming a porous layer on one surface of a semiconductor substrate and forming a non-porous layer on the porous layer.
[0053]
  the aboveofIn the separation device, for example, the non-porous layer includes a single crystal semiconductor layer.
[0054]
  Others described in the specificationSeparation methodIsA separation method for separating a sample having a separation layer therein by the separation layer, wherein a predetermined region of the separation layer is left as an unseparated region, and the separation layer is used for the separation layer. A first separation step for partially separating the sample, and a first separation step for completely separating the sample by applying a force from a predetermined direction to the unseparated region of the sample processed in the first separation step. 2 separation stepsRu.
[0055]
  the aboveofIn the separation method, for example, the sample is preferably a plate-like member having a fragile layer as the separation layer.
[0056]
  the aboveofIn the separation method, for example, in the first separation step, it is preferable to partially separate the sample so as to leave a substantially circular region as the unseparated region.
[0057]
  the aboveofIn the separation method, for example, in the first separation step, it is preferable that the sample is partially separated so as to leave a substantially circular region as the unseparated region in a substantially central portion of the separation layer. .
[0058]
  the aboveofIn the separation method, for example, in the first separation step, the sample is removed by ejecting a fluid toward the separation layer while rotating the sample around an axis orthogonal to the separation layer. In the second separation step, the sample is held without being rotated, and a fluid is ejected toward the gap between the samples generated by the partial separation process, whereby the sample is It is preferable to isolate the remaining unseparated region.
[0059]
  the aboveofIn the separation method, for example, in the first separation step, a fluid is ejected toward the separation layer of the sample while rotating the sample about an axis orthogonal to the separation layer. The sample is partially separated, and in the second separation step, the rotation of the sample is substantially stopped, and fluid is ejected toward the gap of the sample generated by the partial separation process. The unseparated region remaining in the sample is preferably separated.
[0060]
  the aboveofIn the separation method, for example, in the second separation step, it is preferable to completely separate the sample by inserting a wedge into the gap between the samples generated by the partial separation process.
[0061]
  the aboveofIn the separation method, for example, the unseparated region remaining after the first separation step is preferably smaller than a region separated in the first separation step.
[0062]
  the aboveofIn the separation method, for example, the sample is preferably formed by bonding a first plate member having a fragile layer therein and a second plate member.
[0063]
  the aboveofIn the separation method, for example, the fragile layer is preferably a porous layer.
[0064]
  the aboveofIn the separation method, for example, the first plate-like member is a semiconductor substrate.
[0065]
  the aboveofIn the separation method, for example, the first plate-like member is preferably formed by forming a porous layer on one surface of a semiconductor substrate and forming a non-porous layer on the porous layer.
[0066]
  the aboveofIn the separation method, for example, the non-porous layer preferably includes a single crystal semiconductor layer.
[0067]
  Others described in the specificationThe separation method is a separation method in which a sample having a separation layer therein is separated by the separation layer, and the separation layer is formed by leaving a predetermined region of the separation layer as an unseparated region. A step of holding a part of the sample partially separated by the step of holding the sample substantially stationary, and a force applied from a predetermined direction to the unseparated region of the stationary sample to completely separate the sample. With separation processRu.
[0068]
  the aboveofIn the separation method, for example, the sample is preferably a plate-like member having a fragile layer as the separation layer.
[0069]
  the aboveofIn the separation method, for example, in the separation step, it is preferable to completely separate the sample by ejecting a fluid toward a gap between the samples formed by partial separation processing.
[0070]
  the aboveofIn the separation method, for example, in the separation step, it is preferable to completely separate the sample by inserting a wedge into a gap between the samples formed by partial separation processing.
[0071]
  the aboveofIn the separation method, for example, the unseparated region is preferably smaller than the already separated region.
[0072]
  the aboveofIn the separation method, for example, the sample is preferably formed by bonding a first plate member having a fragile layer therein and a second plate member.
[0073]
  the aboveofIn the separation method, for example, the fragile layer is preferably a porous layer.
[0074]
  the aboveofIn the separation method, for example, the first plate-like member is a semiconductor substrate.
[0075]
  the aboveofIn the separation method, for example, the first plate-like member is formed by forming a porous layer on one surface of a semiconductor substrate and forming a non-porous layer on the porous layer.
[0076]
  the aboveofIn the separation method, for example, the non-porous layer includes a single crystal semiconductor layer.
[0077]
DETAILED DESCRIPTION OF THE INVENTION
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
[0078]
FIG. 1 is a view for explaining a method of manufacturing an SOI substrate according to a preferred embodiment of the present invention in the order of steps.
[0079]
In the step shown in FIG. 1A, a single crystal Si substrate 11 is prepared, and a porous Si layer 12 is formed on the surface thereof by anodization or the like. 1B, a non-porous single crystal Si layer 13 is formed on the porous Si layer 12 by an epitaxial growth method. As a result, the first substrate (1) is formed.
[0080]
In the step shown in FIG. 1C, first, an insulating layer (for example, SiO 2) is formed on the surface of the single crystal Si substrate 14.₂A second substrate (<2>) on which a layer) 15 is formed is prepared, and the first substrate (<1>) and the second substrate (<2>) are combined with the non-porous single crystal Si layer 13 and Adhesion is performed at room temperature so that the insulating layer 15 faces. Thereafter, the first substrate (1) and the second substrate (2) are bonded together by anodic bonding, pressurization, heat treatment, or a combination thereof. By this treatment, the non-porous single crystal Si layer 13 and the insulating layer 15 are firmly bonded. The insulating layer 15 may be formed on the single crystal Si substrate 14 side as described above, may be formed on the non-porous single crystal Si layer 13, or may be formed on both. As shown in FIG. 1C, the first substrate and the second substrate are brought into close contact with each other.
[0081]
In the step shown in FIG. 1D, the two bonded substrates are separated at the porous Si layer 12 portion. Thereby, the second substrate side ((1) '' + (2)) has a laminated structure of porous Si layer 12 '' / single crystal Si layer 13 / insulating layer 15 / single crystal Si substrate. On the other hand, the first substrate side ({circle around (1)}) has a structure having a porous Si layer 12 ′ on a single crystal Si substrate 11.
[0082]
The separated substrate ((1) ') forms the first substrate ((1)) again by removing the remaining porous Si layer 12' and planarizing the surface as necessary. It is used as a single crystal Si substrate 11 for this purpose.
[0083]
After separating the bonded substrates, in the step shown in FIG. 1 (e), the porous layer 12 '' on the surface of the second substrate ((1) '' + (2)) is selectively removed. . Thereby, a laminated structure of the single crystal Si layer 13 / insulating layer 15 / single crystal Si substrate 14, that is, a substrate having an SOI structure is obtained.
[0084]
In this embodiment, in at least a part of the step shown in FIG. 1D, that is, the step of separating the bonded substrate, a liquid or gas (fluid) is directed toward the porous Si layer which is a separation layer. Is used to separate the bonded substrate into two sheets by the separation layer.
[0085]
[Basic configuration of separation device]
This separation apparatus applies a water jet method. In general, the water jet method is a method of spraying water (adding abrasive when cutting hard materials) into a high-speed, high-pressure bundle flow to an object, ceramics, metal, concrete, resin, This is a method of cutting rubber, wood, etc., processing, removing the coating film on the surface, washing the surface, etc. (see Water Jet Vol. 1, No. 1, page 4). Conventionally, the water jet method has been used to perform cutting, processing, coating film removal, and surface cleaning as described above mainly by removing a part of the material.
[0086]
This separation device is a method of selectively collapsing a porous layer by injecting a fluid into a bundle-like flow toward a porous layer (separation layer) of a bonded substrate, which is a fragile structural portion. The substrate is separated at the porous layer portion. Hereinafter, this bundled flow is referred to as “jet”. In addition, the fluid constituting the jet is referred to as a “jet constituent medium”. As the jet component medium, water, alcohol and other organic solvents, hydrofluoric acid, nitric acid and other acids, potassium hydroxide and other alkalis, air, nitrogen gas, carbon dioxide gas, rare gas, etching gas and other gases, plasma, etc. are used. Can do.
[0087]
When this separation apparatus is applied to a manufacturing process of a semiconductor device, for example, a separation process of a bonded substrate, it is preferable to use pure water from which impurity metals, particles, and the like are removed as much as possible.
[0088]
This separation device removes the porous layer from the outer peripheral portion toward the central portion by jetting a jet toward the porous layer exposed on the side surface of the bonded substrate. Thereby, the bonded substrate is not damaged by the main body portion, and only the porous layer having weak mechanical strength is removed and separated into two substrates.
[0089]
FIG. 2 is a diagram showing a schematic configuration of a separation apparatus according to a preferred embodiment of the present invention. The separation apparatus 100 includes substrate holding units 120 and 150 having a vacuum suction mechanism, and holds the bonded substrate 101 by sandwiching the bonded substrate 101 from both sides by the substrate holding units 120 and 150. The bonded substrate 101 has a porous layer 101b which is a fragile component inside, and is separated into two substrates 101a and 101c at the portion of the porous layer 101b by the separation device 100. In the separation apparatus 100, for example, the substrate 101a is on the first substrate side (1) in FIG. 1, and the substrate 101c is on the second substrate side (1) '' + 2 in FIG. Set to be.
[0090]
The substrate holders 120 and 150 exist on the same rotation axis. The substrate holding unit 120 is connected to one end of a rotating shaft 104 rotatably supported on a support base 109 via a bearing 108, and the other end of the rotating shaft 104 is connected to a rotating shaft of the motor 110. Therefore, the bonded substrate 101 vacuum-adsorbed to the substrate holding unit 120 is rotated by the rotational force generated by the motor 110. The motor 110 is controlled by the controller 190 and rotates the rotation shaft 104 at a rotation speed instructed by the controller 190 or stops the rotation.
[0091]
The substrate holding unit 150 is connected to one end of a rotating shaft 103 that is slidably and rotatably supported on the support table 109 via a bearing 111, and the other end of the rotation shaft 103 is fixed to the support table 109. The air cylinder 112 is connected. The air cylinder 112 is driven by a cylinder driving unit 191 controlled by the controller 190. The bonded substrate 101 is pressed by the substrate holding unit 150 when the air cylinder 112 pushes the rotating shaft 103. A seal member 113 is fixed to the support base 109 so as to cover the periphery of the rotating shaft 103. The seal member 113 is made of rubber or the like, for example, and prevents the jet component medium from entering the bearing 111 side.
[0092]
The substrate support portions 120 and 150 are each provided with one or a plurality of suction holes 181 and 182 as a vacuum suction mechanism. The suction holes 181 and 182 pass through the rotary shafts 104 and 103, respectively, and the rotary seal portion 104a. , 103a. Vacuum lines 104b and 103b are connected to the rotary seals 104a and 103a, respectively. An electromagnetic valve for controlling attachment / detachment of the bonded substrate 101 or the separated substrate is attached to these vacuum lines 104b and 103b. This solenoid valve is controlled by the controller 190.
[0093]
Hereinafter, first, a basic separation process using the separation apparatus 100 and problems of the process will be described, and then an improved separation process will be described as a preferred embodiment of the present invention.
[0094]
[Basic separation process by separation device]
First, by accommodating the rotating shaft 103 in the air cylinder 112, a corresponding distance is provided between the suction surfaces of the substrate holders 120 and 150. Next, the bonded substrate 101 is transferred between the substrate holding unit 120 and the substrate holding unit 150 by a transfer robot or the like, and the center of the bonded substrate 101 and the central axes of the rotation shafts 104 and 103 are aligned. Next, the controller 190 causes the air cylinder 112 to push out the rotary shaft 103, thereby pressing and holding the bonded substrate 101 (state shown in FIG. 2).
[0095]
Next, the controller 190 controls the motor 110 to rotate the bonded substrate 101 at a constant rotation speed. Thereby, the rotating shaft 104, the substrate holding unit 120, the bonded substrate 101, the substrate holding unit 150, and the rotating shaft 103 rotate integrally.
[0096]
Next, the controller 190 controls the pump 114 to feed the jet constituent medium (for example, water) to the nozzle 102 and waits until the jet ejected from the nozzle 102 is stabilized. When the jet is stabilized, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 onto the center of the bonded substrate 101 and sandwich the jet into the porous layer 101b of the bonded substrate 101.
[0097]
When the jet is inserted, the bonded substrate 101 is subjected to a separation force due to the pressure of the jet constituent medium continuously injected into the porous layer 101b which is a fragile structure, and thereby the substrates 101a and 101c. The porous layer 101b connecting the two is destroyed. By this process, for example, the bonded substrate 101 can be completely separated in a few minutes.
[0098]
When the bonded substrate 101 is separated into two substrates, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 to the standby position, and then stops the operation of the pump 114. In addition, the controller 190 controls the motor 110 to stop the rotation of the bonded substrate 101 and controls the above-described electromagnetic valve, thereby vacuuming the separated substrates 101a and 101c to the substrate holders 120 and 150, respectively. Adsorb.
[0099]
Next, the controller 190 stores the rotating shaft 103 in the air cylinder 112. Thus, the two substrates that have been physically separated are separated into two bodies by cutting off the surface tension of the jet component medium (for example, water).
[0100]
According to the separation process as described above, the bonded substrate 101 can be efficiently separated, and the substrate is less damaged or contaminated. Therefore, this separation process is considered very promising for separating bonded substrates or other similar samples. However, problems to be solved remain as follows.
[0101]
[Problems in basic separation processing]
FIG. 3 is a diagram schematically showing the defects 101d and 101e that may be generated by the above-described separation process, that is, the process of separating the bonded substrate into two substrates while rotating at a constant speed. Such defects 101d and 101c are generated in a portion separated at the final stage of the separation process of the bonded substrate 101.
[0102]
When such defects 101d and 101c are large, the layer adjacent to the porous layer (101b; 12 in FIG. 1) (for example, the single crystal Si layer 13 shown in FIG. 1) is damaged and separated. The substrate cannot be used in the next process (for example, the process shown in FIG. 1E).
[0103]
The reason why such defects 101d and 101e are generated is considered to be as follows. In the separation process of the bonded substrate, first, the pressing force by the substrate holding unit 150 (air cylinder 112) acts on the bonded substrate 101 in the direction in which the bonded substrate 101 is sandwiched, and second, the bonded substrate. A force (separation force) for expanding the bonded substrate 101 by the jet constituent medium injected into the gap generated by the separation of 101 acts, and thirdly, the bonding force of the porous layer 101 in the unseparated region of the bonded substrate 101. (Resistance to separation force) acts.
[0104]
Here, the pressing force by the air cylinder 112 is maintained substantially constant. On the other hand, it is considered that the separating force rapidly increases as the separated area of the bonded substrate is enlarged. Further, the coupling force naturally decreases as the unseparated area is reduced.
[0105]
Accordingly, at the stage where the outer peripheral portion of the bonded substrate is separated, the relationship of (binding force) + (pressing force) >> (separating force) is maintained, and an excessive separating force acts on the bonded substrate. I don't think it will happen.
[0106]
However, when the separation progresses and the relationship of (binding force) + (pressing force) <(separating force) is established, the substrate holding unit 150 starts to move backward, so that the separating force is more efficient with respect to the bonded substrate. Acts to accelerate the separation. In the final stage of the separation process, (bonding force) + (pressing force) << (separating force) due to a decrease in the binding force and a rapid increase in the separating force. It is thought to act on the whole. At this time, the final separation of the bonded substrate 101 is not the impact of the jet, but mainly the separation force, that is, the jet constituent medium injected into the gap generated by the separation of the bonded substrate expands the bonded substrate. This is considered to be caused by the entire unseparated region being peeled off by force.
[0107]
Hereinafter, an improved separation process for reducing the occurrence of defects due to the separation process will be described.
[0108]
[Improved separation process]
As a result of experiments, the present inventor has found that the occurrence of the above defects can be reduced by the following method.
[0109]
That is, in the first step, the bonded substrate 101 is partially separated so as to leave a predetermined region of the porous layer 101b as an unseparated region. Here, the unseparated region is preferably approximately circular, and the position is preferably approximately the center of the bonded substrate 101.
[0110]
Next, in the second step, the bonded substrate 101 is completely separated by applying a force to the unseparated region from a predetermined direction rather than all around. In this way, by applying a force from a predetermined direction to the unseparated region, a strong separating force is applied to a part around the unseparated region, and a weak separating force is applied to the other part. The separation region can be gradually enlarged while acting. Therefore, it is possible to effectively prevent defects in each separated substrate as compared with the case where the unseparated regions are collectively separated.
[0111]
Hereinafter, preferred embodiments of the improved separation process will be described.
[0112]
(First embodiment)
In this embodiment, first, in the first step, the nozzle 102 is positioned on the center of the bonded substrate 101 and the bonded substrate 101 is rotated by the motor 110 (for example, 8 rpm), and the periphery of the bonded substrate 101 is The part is separated and the central part is left as an unseparated region. Here, the separation process is performed while rotating the bonded substrate 101 in order to make the shape and position of the unseparated region 202 remaining after the first step uniform for a large number of bonded substrates. Thereby, each bonded substrate 101 can be processed under substantially the same conditions in the second step.
[0113]
FIG. 4 is a diagram schematically showing a state in which the bonded substrate 101 is partially separated in the first step of this embodiment. In the figure, reference numeral 201 denotes a boundary between the separation area and the unseparated area during the progress of the first step, an area where the outside of the boundary 201 has already been separated, and an area where the inside of the boundary 201 has not yet been separated. It is. In the first step of this embodiment, the separation process proceeds while the bonded substrate 101 is rotated, so the locus of the boundary 201 is spiral. A region 202 that is not hatched is an unseparated region remaining after the first step, and its shape is substantially circular, and its position is the substantially central portion of the bonded substrate 101. A hatched region 203 is a region (separation region) separated by the execution of the first step. The unseparated region 202 is preferably smaller than the separated region 203.
[0114]
As described above, by performing the first step while rotating the bonded substrate 101, a target region, for example, a central portion of the bonded substrate 101 can be left as the unseparated region 202. The second step can be performed on the substrate 101 under substantially the same conditions.
[0115]
Next, in the second step, the rotation speed of the bonded substrate 101 is lowered to substantially stop the rotation (for example, 2 rpm or less), or the rotation of the bonded substrate 101 is completely stopped. The unseparated area 202 is separated. Thereby, a force can be applied to the unseparated region 202 from a predetermined direction. Here, it is most preferable to completely stop the rotation of the bonded substrate 101.
[0116]
FIG. 5 is a diagram schematically showing a state in which the bonded substrate 101 is completely separated in the second step of this embodiment. In the figure, reference numeral 204 denotes a boundary between the separation region and the non-separation region during execution of the second step. The boundary 204 moves as indicated by an arrow.
[0117]
In this way, a force is applied to the unseparated region 202 from a predetermined direction by inserting a jet into the gap between the bonded substrates 101 with the rotational speed of the bonded substrates 101 being substantially stopped. Can do. As a result, a strong separation force can be applied to a part of the periphery of the unseparated region 202 and a separation region can be gradually enlarged while a weak separation force is applied to the other part. It is possible to prevent a defect from occurring in each of the formed substrates.
[0118]
FIG. 6 is a flowchart schematically showing a control procedure of the separation apparatus 100 in this embodiment. Note that the processing shown in this flowchart is controlled by the controller 190. The process shown in this flowchart is executed after the bonded substrate 101 is set in the separation apparatus 100, that is, after the bonded substrate 101 is held by the substrate holding units 120 and 150.
[0119]
Steps S101 to S104 correspond to the first step. First, the controller 190 controls the motor 110 to rotate the bonded substrate board 101 at a predetermined rotation speed (S101). The rotation speed at this time is preferably about 4 to 12 rpm, and more preferably about 6 to 10 rpm. In this embodiment, it is 8 rpm.
[0120]
Next, the controller 190 controls the pump 114 to inject a jet having a predetermined pressure (for example, 500 kgf / square cm) from the nozzle 102 (S102). Next, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 from the standby position (a position where the jet does not collide with the bonded substrate 101) onto the porous layer 101b on the central axis of the bonded substrate 101. (S103). Thereby, partial separation of the bonded substrate 101 is started. Thereafter, the controller 190 waits for the separation of the area other than the area to be left as the unseparated area 202 (for example, after a predetermined time has elapsed), and then controls the nozzle driving unit 106 to move the nozzle 102 to the standby position. (S104). This completes the first step.
[0121]
Steps S105 to S107 correspond to the second step. First, the controller 190 controls the motor 110 to substantially stop the rotation of the bonded substrate 101 (S105). Next, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S106). Thereby, separation of the unseparated region 202 of the bonded substrate 101 is started. After that, the controller 190 waits for the bonded substrate 101 to be completely separated (for example, after a predetermined time has elapsed), and then controls the nozzle driving unit 106 to move the nozzle 102 to the standby position, and the pump 114 is controlled to stop jet injection (S107). This completes the second step.
[0122]
(Second Embodiment)
This embodiment relates to a method for better controlling the shape and position of an unseparated region left after the first step. In the first step of this embodiment, the nozzle 102 is positioned on the center of the bonded substrate 101, the peripheral portion of the bonded substrate 101 is separated while the bonded substrate 101 is rotated by the motor 110, and the central portion is left unexposed. It is the same as the first step of the first embodiment in that it is left as an isolation region.
[0123]
However, the first step of this embodiment is that the bonded substrate 101 is partially separated while increasing the rotational speed of the bonded substrate 101 gradually or stepwise (including two steps). This is different from the first step of the first embodiment. For example, after the start of separation, it is preferable to rotate the bonded substrate 101 at a low speed until the bonded substrate 101 makes about one rotation (first stage), and then increase the rotation speed (second stage).
[0124]
Here, the rotational speed of the bonded substrate 101 in the first stage is, for example, preferably about 4 to 12 rpm, and more preferably about 6 to 10 rpm. In this embodiment, it is 8 rpm. Moreover, it is preferable that the rotational speed of the bonded substrate board 101 in a 2nd step is about 25-35 rpm, for example, and it is still more preferable that it is about 28-32 rpm. In this embodiment, the speed is 30 rpm.
[0125]
As described above, the reason why the bonded substrate 101 is rotated at a low speed in the initial stage of the first process is that the separation force hardly acts on the bonded substrate 101 in the initial stage. In addition, the first step is performed while increasing the rotation speed gradually or stepwise, when the bonded substrate 101 is rotated at a high speed, an unseparated region having a shape closer to point symmetry can be left. Because.
[0126]
FIG. 7 is a diagram schematically showing a state in which the bonded substrate is partially separated by the first step of this embodiment. The example shown in FIG. 7 is an example in which the bonded substrate 101 is rotated at about 8 rpm until it rotates about once, and then the rotation speed is set at about 30 rpm.
[0127]
Note that the second step of this embodiment is the same as that of the first embodiment. FIG. 8 is a diagram schematically showing a state in which the bonded substrate 101 is completely separated in the second step of this embodiment.
[0128]
As described above, in the first step, the rotational speed of the bonded substrate 101 is increased gradually or stepwise so that the shape of the unseparated region 202 remaining after the completion of the first step is made to be a shape closer to a circle. In addition, the position can be made to coincide with the center of the bonded substrate 101. This means that the shape of the unseparated region 202 can be made more uniform for each bonded substrate 101. Therefore, defects that may occur in the second step can be reduced as compared with the first embodiment.
[0129]
FIG. 9 is a flowchart schematically showing a control procedure of the separating apparatus 100 in this embodiment. Note that the processing shown in this flowchart is controlled by the controller 190. Further, the processing shown in this flowchart is executed after the bonded substrate 101 is set in the separation apparatus 100.
[0130]
Steps S201 to S205 correspond to the first step. First, the controller 190 controls the motor 110 to rotate the bonded substrate 101 at a low speed (S201). The rotation speed at this time is preferably about 4 to 12 rpm, and more preferably about 6 to 10 rpm. In this embodiment, it is 8 rpm.
[0131]
Next, the controller 190 controls the pump 114 to eject a jet of a predetermined pressure (for example, 500 kgf / square cm) from the nozzle 102 (S202). Next, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S203). Thereby, partial separation of the bonded substrate 101 is started.
[0132]
Thereafter, the controller 190 waits for, for example, one rotation of the bonded substrate 101, and then controls the motor 110 to increase the rotation speed of the bonded substrate 101 (S204). The rotation speed at this time is preferably about 25 to 35 rpm, for example, and more preferably about 28 to 32 rpm. In this embodiment, the speed is 30 rpm.
[0133]
Thereafter, the controller 190 waits for the separation of the area other than the area to be left as the unseparated area 202 (for example, after a predetermined time has elapsed), and then controls the nozzle driving unit 106 to move the nozzle 102 to the standby position. (S205). This completes the first step.
[0134]
Steps S206 to S208 correspond to the second step. First, the controller 190 controls the motor 110 to substantially stop the rotation of the bonded substrate 101 (S206). Next, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S207). Thereby, separation of the unseparated region 202 of the bonded substrate 101 is started.
[0135]
After that, the controller 190 waits for the bonded substrate 101 to be completely separated (for example, after a predetermined time has elapsed), and then controls the nozzle driving unit 106 to move the nozzle 102 to the standby position, and the pump 114 is controlled to stop jet injection (S208). This completes the second step.
[0136]
(Third embodiment)
This embodiment also relates to a method for better controlling the shape and position of the unseparated region left after the first step. In the first step of this embodiment, the nozzle 102 is positioned on the center of the bonded substrate 101, the peripheral portion of the bonded substrate 101 is separated while the bonded substrate 101 is rotated by the motor 110, and the central portion is left unexposed. It is the same as the first step of the first embodiment in that it is left as an isolation region. However, the first step of this embodiment is the first implementation in that the bonded substrate 101 is partially separated while the jet pressure is lowered gradually or stepwise (including two steps). It differs from the 1st process of form. For example, after the separation is started, the jet pressure is set to a high pressure (for example, about 500 kgf / square cm) until the bonded substrate 101 is rotated about once, and then, for example, the central portion that is left as an unseparated region is not separated. It is preferable to set the jet pressure to a moderate pressure (for example, about 220 kgf / square cm).
[0137]
Thus, the reason why the jet pressure is set to a high pressure in the initial stage of the first process is that the separating force is unlikely to act efficiently on the bonded substrate 101 in the initial stage. The reason why the first step is advanced while gradually or gradually decreasing the pressure of the jet is that if the pressure of the jet is reduced, an unseparated region having a shape closer to point symmetry can be left. is there.
[0138]
FIG. 10 is a diagram schematically showing a state in which the bonded substrate is partially separated by the first step of this embodiment. The example shown in FIG. 10 is an example in which the jet pressure is set to 500 kgf / square cm until the bonded substrate substrate 101 rotates about once, and then the jet pressure is set to 220 kgf / square cm.
[0139]
Note that the second step of this embodiment is the same as that of the first embodiment. The state of separation of the bonded substrate 101 in the second step is substantially the same as the example shown in FIG.
[0140]
As described above, in the first step, by gradually or gradually reducing the jet pressure, the shape of the unseparated region 202 remaining after the completion of the first step can be made more nearly circular, and The position can be made to coincide with the center of the bonded substrate. This means that the shape of the unseparated region 202 can be made more uniform for each bonded substrate 101. Therefore, defects that may occur in the second step can be reduced as compared with the first embodiment.
[0141]
FIG. 11 is a flowchart schematically showing a control procedure of the separating apparatus 100 in this embodiment. Note that the processing shown in this flowchart is executed after the bonded substrate 101 is set in the separation apparatus 100.
[0142]
Steps S301 to S305 correspond to the first step. First, the controller 19 controls the motor 110 to rotate the bonded substrate 101 at a predetermined speed (S301). The rotation speed at this time is preferably about 4 to 12 rpm, and more preferably about 6 to 10 rpm. In this embodiment, it is 8 rpm.
[0143]
Next, the controller 190 controls the pump 114 to inject a high-pressure (for example, 500 kgf / square cm) jet from the nozzle 102 (S202). Next, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S303). Thereby, partial separation of the bonded substrate 101 is started. After that, the controller 190 waits for one rotation of the bonded substrate 101, for example, and then controls the pump 114 to set the jet pressure to a low pressure (eg, 220 kgf / square cm).
[0144]
Thereafter, the controller 190 waits for the separation of the area other than the area to be left as the unseparated area 202 (for example, after a predetermined time has elapsed), and then controls the nozzle driving unit 106 to move the nozzle 102 to the standby position. (S305). This completes the first step.
[0145]
Steps S306 to S309 correspond to the second step. First, the controller 190 controls the motor 110 to substantially stop the rotation of the bonded substrate 101 (S306). Next, the controller 190 controls the pump 114 to increase the pressure of the jet to a pressure at which the unseparated region 202 can be separated (for example, 500 kgf / square cm) (S307).
[0146]
Next, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S308). Thereby, separation of the unseparated region 202 of the bonded substrate 101 is started. After that, the controller 190 waits for the bonded substrate 101 to be completely separated (for example, after a predetermined time has elapsed), and then controls the nozzle driving unit 106 to move the nozzle 102 to the standby position, and the pump 114 is controlled to stop jet injection (S309). This completes the second step.
[0147]
By the way, it is also effective to combine the second embodiment and the third embodiment. That is, in the first step, in the initial stage of separation (for example, the first rotation), separation is performed with a high-pressure jet while rotating the bonded substrate 101 at a low speed, and then the rotational speed of the bonded substrate 101 is gradually increased. Alternatively, it is possible to make the unseparated region 202 left after the first step more uniform by increasing the pressure stepwise and proceeding the separation while gradually or stepwise decreasing the jet pressure.
[0148]
(Fourth embodiment)
This embodiment also relates to a method for better controlling the shape and position of the unseparated region left after the first step. In the first step of this embodiment, the nozzle 102 is disposed at a position displaced from the center of the bonded substrate 101 by a predetermined distance (for example, 20 to 30 mm in a direction perpendicular to the jetting direction of the jet), and the motor 110. While rotating the bonded substrate 101 (for example, 8 rpm), the peripheral portion of the bonded substrate 101 is separated, and the central portion is left as an unseparated region. As described above, the jet is ejected toward a position shifted from the center of the bonded substrate 101 because the shape and position of the unseparated region 202 remaining after the first step is made more uniform for the multiple bonded substrates 101. It is to do.
[0149]
FIG. 12 is a diagram schematically showing a state in which the bonded substrate is partially separated by the first step of this embodiment. In the figure, 201 indicates a boundary between the separation region and the unseparated region during execution of the first step, and is a region where the outside of the boundary 201 has already been separated and the inside of the boundary 201 has not yet been separated. It is. In the first step of this embodiment, the separation process proceeds while the bonded substrate 101 is rotated, so the locus of the boundary 201 is spiral. A region 202 not hatched is an unseparated region remaining after execution of the first step, and its shape is close to a circle as compared to the first embodiment, and its center is the center of the bonded substrate 101. Close to. A hatched region 203 is a region separated by the execution of the first step. Thus, compared to the first embodiment, the unseparated region 202 can be made to have a shape close to point symmetry as compared to the first embodiment, as compared with the first embodiment as the first step approaches the final stage. This is probably because the separation force acting on the porous layer is weakened.
[0150]
Note that the second step of this embodiment is the same as that of the first embodiment. FIG. 13 is a diagram schematically illustrating a state in which the bonded substrate 101 is completely separated in the second step.
[0151]
FIG. 14 is a flowchart schematically showing a control procedure of the separation apparatus 100 in this embodiment. Note that the processing shown in this flowchart is controlled by the controller 190. The process shown in this flowchart is executed after the bonded substrate 101 is set in the separation apparatus 100, that is, after the bonded substrate 101 is held by the substrate holding units 120 and 150.
[0152]
Steps S401 to S404 correspond to the first step. First, the controller 190 controls the motor 110 to rotate the bonded substrate 101 at a predetermined rotation speed (for example, 8 rpm) (S401). Next, the controller 190 controls the pump 114 to eject a jet of a predetermined pressure (for example, 500 kgf / square cm) from the nozzle 102 (S402). Next, the controller 190 controls the nozzle driving unit 106 so that the nozzle 102 is porous above the position shifted from the standby position by a predetermined distance (for example, 20 to 30 mm) in the horizontal direction from the central axis of the bonded substrate 101. It is moved on the layer 101b (S403). Thereby, partial separation of the bonded substrate 101 is started. Thereafter, the controller 190 waits for the separation of the area other than the area to be left as the unseparated area 202 (for example, after a predetermined time has elapsed), and then controls the nozzle driving unit 106 to move the nozzle 102 to the standby position. (S404). This completes the first step.
[0153]
Steps S405 to S407 correspond to the second step. First, the controller 190 controls the motor 110 to substantially stop the rotation of the bonded substrate board 101 (S405). Next, the controller 190 controls the nozzle driving unit 106 to move the nozzle 102 from the standby position onto the porous layer 101b on the central axis of the bonded substrate 101 (S406). Thereby, separation of the unseparated region 202 of the bonded substrate 101 is started. After that, the controller 190 waits for the bonded substrate 101 to be completely separated (for example, after a predetermined time has elapsed), and then controls the nozzle driving unit 106 to move the nozzle 102 to the standby position, and the pump 114 is controlled to stop jet injection (S407). This completes the second step.
[0154]
In the first to fourth embodiments described above, the execution of the second step may be started as it is without returning the nozzle 102 to the standby position at the end of the first step.
[0155]
(Fifth embodiment)
This embodiment relates to a method of using a wedge instead of a fluid in the second step. The first step is preferably the first step in any of the first to fourth embodiments.
[0156]
15 and 16 are diagrams schematically showing a configuration of a separation apparatus (hereinafter referred to as a final separation apparatus) suitable for implementation in the second step. The final separation device 350 includes first and second support portions 353 and 356 that support a predetermined position of the bonded substrate 101 that has undergone the first step. The supporting position is preferably a part of the peripheral portion, for example.
[0157]
The first support portion 353 is fixed to the stage 354, and the second support portion 356 is fixed to the tip of the piston of the cylinder 355 fixed to the stage 354. When the bonded substrate 101 is set in the final separation device 350, a predetermined gap is provided between the first support part 353 and the second support part 356 by accommodating the piston in the cylinder 355, and the gap is provided in the gap. By pushing the piston 355 from the cylinder 355 after inserting the bonded substrate 101, the bonded substrate 101 is pressed and held from above by the second support portion 356.
[0158]
It is preferable to provide an elastic member made of rubber or the like at a portion where the first support portion 354 and / or the second support portion 356 are in contact with the bonded substrate 101. This is for facilitating the separation of the bonded substrate 101 and for preventing excessive stress from acting on the portions supported by the first support portion 353 and the second support portion 356 during the separation. . The illustrated example is an example in which an elastic body 357 is provided on the second support portion 356.
[0159]
The final separation device 350 includes a wedge 351 for applying a force to the bonded substrate 101 from a predetermined direction. The wedge 351 is slid by the cylinder 352. Specifically, when separating the bonded substrate 101, as shown in FIG. 16, the wedge 351 is pushed out from the cylinder 352 and the tip of the wedge 351 is inserted into the gap between the bonded substrates 101. Accordingly, the separation region can be gradually enlarged while applying a strong separation force to a part of the unseparated region of the bonded substrate 101 and applying a weak separation force to the other portion. It is effectively prevented that a defect is generated in each of the formed substrates.
[0160]
FIG. 17 is a diagram schematically showing the flow of separation processing using the separation device 100 and the final separation device 350. First, the bonded substrate 101 is set in the separating apparatus 100 (S501), and a predetermined region is left as an unseparated region by a method similar to the first step according to any one of the first to fourth embodiments, for example. Then, the bonded substrate 101 is partially separated (S502). Next, the bonded substrate 101 that has undergone the first step is set to a final separation layer value 350 (S503), and the bonded substrate 101 is completely separated by a wedge (S504).
[0161]
FIG. 18 is a plan view schematically showing an automatic separation apparatus in which the separation apparatus 100 and the final separation apparatus 350 are incorporated. This automatic separation apparatus 300 includes a separation apparatus 100 shown in FIG. 2, a final separation apparatus 350 shown in FIGS. 15 and 16, a substrate transfer robot 340, a loader 333, a first unloader 332, and a second unloader 331. A centering device 370 and an air blowing device 361.
[0162]
Separation device 100 is disposed in chamber 310 to prevent jet component media (eg, water) from splashing. The chamber 310 is provided with a shutter 320 for taking in and out the bonded substrate 101 before and after the execution of the first step.
[0163]
Prior to the separation process, a carrier 336 containing an unprocessed bonded substrate 101 is placed on the loader 333, and the separated substrates are placed on the first and second unloaders 332 and 331. Empty carriers 335 and 334 are respectively mounted.
[0164]
The centering device 370 uses a cylinder 372 to push out a guide member 371 having an arcuate surface that matches the shape of the bonded substrate 101 and sandwiches the bonded substrate 101 between the guide member 371 and the guide member 373. As a result, the bonded substrate 101 is centered. In this embodiment, the centering device 370 and the final separation device 370 are integrated, and after the bonded substrate 101 that has undergone the first step is centered, a part of the bonded substrate 101 is held as it is. Thus, the final separation can be performed by the wedge 351. In FIG. 18, the second support member 356 and the like shown in FIGS. 15 and 16 are omitted.
[0165]
The substrate transport robot 340 holds the bonded substrate 101 or each separated substrate by the robot hand 341 and transports it to each device or carrier. The robot hand 341 has a function of vertically or flipping the held substrate.
[0166]
FIG. 19 is a flowchart schematically showing separation processing by the automatic separation device 300. Note that the processing shown in this flowchart is controlled by a controller (not shown). Further, in this process, a carrier 336 containing an unprocessed bonded substrate 101 is placed on the loader 333, and an empty space for accommodating the separated substrate is placed on the first and second unloaders 332 and 331. It is executed after the carriers 335 and 334 are mounted.
[0167]
First, the bonded substrate 101 is taken out from the carrier 336 on the loader 333 by the transfer robot 340, and the bonded substrate 101 is centered by the centering device 370 (S601). Next, the shutter 320 is opened (S602), and the robot hand 341 is rotated by 90 degrees, so that the surface of the bonded substrate 101 that has been centered is made vertical and set in the separating apparatus 100 (S603).
[0168]
Next, the shutter 320 is closed (S604), jetting is started (S605), and the nozzle 102 is moved from the standby position 311 along the movement path 312 to the center of the bonded substrate 101 to separate the first step. Processing is started (S606). As the separation process in the first step, the first step according to any one of the first to fourth embodiments is suitable.
[0169]
When the predetermined time has elapsed and the separation process leaving the predetermined area as an unseparated area is completed, the nozzle 102 is returned to the standby position 311 along the movement path 312 (S607), and the jet injection is stopped (S608).
[0170]
Next, the shutter 320 is opened (S609), the bonded substrate 101 is received from the separating apparatus 100 by the robot hand 341, and is rotated by 90 degrees to be horizontal and delivered to the final separating apparatus 350 (centering apparatus 370) ( In step S610, the shutter 320 is closed (S611).
[0171]
Next, the bonded substrate 101 is centered by the centering device 370 and held as it is by the first and second support members 353 and 356 (see FIGS. 15 and 16) (S612). Next, the wedge 351 is inserted into the gap between the bonded substrates 101 to completely separate them (S613), and the air blow device 361 separates the waste generated at the time of separation from each substrate, the final separation device 350 and the centering device 370. Etc. are removed (S614).
[0172]
Next, the separated upper substrate 101c is turned over by the robot hand 341 (rotated 180 degrees) and accommodated in the carrier 335 on the unloader 332 (S615). Further, the separated lower substrate 101a is accommodated in the carrier 334 on the unloader 331 by the robot hand 341 (S616).
[0173]
The separation of one bonded substrate 101 is completed by the above processing. When the unprocessed bonded substrate 101 remains, the above process may be repeated.
[0174]
【The invention's effect】
  According to the present invention, for example, it is suitable for preventing a defect from occurring when separating a sample such as a substrate having a separation layer inside.SeparationA method can be provided.
[0175]
[Brief description of the drawings]
FIG. 1 is a diagram for explaining a method of manufacturing an SOI substrate according to a preferred embodiment of the present invention in order of steps.
FIG. 2 is a diagram showing a schematic configuration of a separation apparatus according to a preferred embodiment of the present invention.
FIG. 3 is a diagram schematically showing defects that may be caused by a process of separating a bonded substrate into two substrates while rotating the bonded substrate at a constant speed.
FIG. 4 is a diagram schematically showing a state in which a bonded substrate is partially separated by the first step of the first embodiment.
FIG. 5 is a diagram schematically showing a state in which the bonded substrate is completely separated by the second step of the first embodiment.
FIG. 6 is a flowchart schematically showing a control procedure of the separation apparatus in the first embodiment.
FIG. 7 is a diagram schematically showing a state in which a bonded substrate is partially separated by the first step of the second embodiment.
FIG. 8 is a diagram schematically showing a state in which a bonded substrate is completely separated by the second step of the second embodiment.
FIG. 9 is a flowchart schematically showing a control procedure of the separation apparatus according to the second embodiment.
FIG. 10 is a diagram schematically showing a state in which a bonded substrate is partially separated by the first step of the third embodiment.
FIG. 11 is a flowchart schematically showing a control procedure of the separation apparatus in the third embodiment.
FIG. 12 is a diagram schematically showing a state in which a bonded substrate is partially separated by the first step of the fourth embodiment.
FIG. 13 is a diagram schematically illustrating a state in which a bonded substrate stack is completely separated by a second step of the fourth embodiment.
FIG. 14 is a flowchart schematically showing a control procedure of the separation apparatus according to the fourth embodiment.
FIG. 15 is a diagram schematically showing a configuration of a final separation apparatus according to a fifth embodiment.
FIG. 16 is a diagram schematically showing a configuration of a final separation apparatus according to a fifth embodiment.
FIG. 17 is a diagram schematically showing a flow of separation processing using a separation device for the first step and a final separation device for the second step.
FIG. 18 is a plan view schematically showing an automatic separation device incorporating a separation device for the first step and a final separation device for the second step.
FIG. 19 is a flowchart schematically showing separation processing by the automatic separation device.
[Explanation of symbols]
11 Single crystal Si substrate
12 Porous Si layer
13 Non-porous single crystal Si layer
14 Single crystal Si substrate
15 Insulating layer
100 Separator
101 Bonded substrate
101b porous layer
101d, 101e defect
103,104 Rotating shaft
108,111 Bearing
109 Support stand
110 motor
112 Air cylinder
113 Seal member
120, 150 Substrate holder
181 and 182 suction holes
104a, 103a Rotation seal part
104b, 103b Vacuum line
190 Controller
191 Cylinder drive
201 Trajectory of separated area and unseparated area
202 Unseparated area
203 Separation area
204 Trajectory of separated area and unseparated area
300 Automatic separator
310 chamber
311 Standby position
312 Travel route
320 Shutter
331,332 Unloader
333 loader
334-336 career
340 Transport robot
341 Robot Hand
350 Final separator
351 wedge
352 cylinder
353 1st support part
354 stage
355 cylinder
356 2nd support part
357 Elastic member
361 Air Blow Device
370 Centering device
371, 373 Guide member

Claims (7)

A separation method for separating a sample having a separation layer therein by the separation layer,
A first separation step of partially separating the sample with the separation layer so as to leave a predetermined region of the separation layer as an unseparated region;
A second separation step of completely separating the sample by applying a force from a predetermined direction to the unseparated region of the sample processed in the first separation step;
In the first separation step, while rotating the sample around an axis perpendicular to the layer for the separation, the sample partially separated by injecting fluid toward the layer for the separation,
In the second separation step, and held without rotating the sample by injecting a fluid toward the gap of the sample caused by partial separation processing, the unseparated remaining in the sample separating how to and separating regions. A separation method for separating a sample having a separation layer therein by the separation layer,
A first separation step of partially separating the sample with the separation layer so as to leave a predetermined region of the separation layer as an unseparated region;
A second separation step of completely separating the sample by applying a force from a predetermined direction to the unseparated region of the sample processed in the first separation step;
In the first separation step, while rotating the sample around an axis perpendicular to the layer for the separation, the sample partially by injecting fluid toward the layer for the separation of the sample Separate and
In the second separation step, substantially stopping the rotation of the sample by injecting a fluid toward the gap of the sample caused by partial separation treatment, the non remaining in the sample separating how to and separating the separation region. A separation method for separating a sample having a separation layer therein by the separation layer,
A first separation step of partially separating the sample with the separation layer so as to leave a predetermined region of the separation layer as an unseparated region;
A second separation step of completely separating the sample by applying a force from a predetermined direction to the unseparated region of the sample processed in the first separation step;
In the second separation step, by inserting the wedge into the gap of the sample caused by partial separation processing, separation method characterized by complete separation of the sample. The separation method according to any one of claims 1 to 3, wherein the sample is a plate-like member having a fragile layer as the separation layer. The separation according to any one of claims 1 to 3, wherein the sample is formed by bonding a first plate member having a fragile layer therein and a second plate member. Method. The separation method according to claim 5 , wherein the fragile layer is a porous layer. The separation method according to claim 5, wherein the first plate-shaped member is a semiconductor substrate.

Images