JP4292350B2 - Liquid crystal display device and manufacturing method thereof - Google Patents

Description

[0001]
[Industrial application fields]
The present invention relates to a large-screen active matrix liquid crystal display device having a wide viewing angle and high image quality at low cost.
[0002]
[Prior art]
In a conventional active matrix liquid crystal display device, when forming a scanning line pattern, a metal such as aluminum or molybdenum is deposited on a glass substrate using a sputtering device, and then a photoresist is coated and a photomask is used for exposure / phenomenon. Was. After etching the deposited metal using this resist pattern, a step of stripping the photoresist was used.
The color filter black mask formation method is the same as the scanning line pattern formation method. After depositing a chromium oxide film and a metal chromium film on a glass substrate using a sputtering device, the photoresist is coated and exposed using a photomask.・ It was a phenomenon. After etching the chromium oxide film and the metal chromium film using this resist pattern, a step of stripping the photoresist was used.
[0003]
[Problems to be solved by the invention]
As shown in FIGS. 1 and 2, the conventional TN mode active element substrate requires five photomask processes in all processes. In the active element substrate in the horizontal electric field liquid crystal mode, the photomask process is required four times or more in all processes. When there are many photoresist processes, a large number of expensive exposure apparatuses are required, and the amount of initial investment becomes large. Further, in the photoresist coating process, the uniformity of the coating film thickness is required, and the larger the substrate, the greater the amount of resist used, and the greater the amount of phenomenon liquid used in the phenomenon process. For this reason, the running cost used in production tended to increase. The larger the substrate, the longer the time required for resist coating, and a reduction in throughput cannot be avoided.
Unless the time from the introduction of the glass substrate to the completion of the active element substrate is shortened, a large number of stockers for storage must be installed in the clean room. A similar problem occurs in the manufacturing process of the color filter substrate, which causes an increase in the manufacturing cost of the large liquid crystal panel.
[0004]
Furthermore, when depositing a metal film on a glass substrate, a vacuum apparatus (sputtering apparatus) is used. As the glass substrate is increased in size, the vacuum apparatus is increased in size and the price of the apparatus is rapidly increased.
As the glass substrate becomes larger, unless the evacuation speed is increased, the throughput will decrease, so the number of expensive cryopumps has increased rapidly.
[0005]
After the metal film is deposited on the entire surface of the glass substrate, the photoresist process is overridden, and then the desired pattern is formed by etching. However, the process of removing the resist that is no longer necessary after the pattern formation is necessary. The organic solvent used in the process of removing the resist is a very dangerous and harmful chemical substance, and when it is worn, a very high processing cost is required.
[0006]
As the glass substrate becomes larger, the apparatus for forming a thin film semiconductor layer has also become larger. The performance of the thin film transistor tends to be lowered only by scaling up the conventional device, and the performance improvement of the thin film transistor is required as the liquid crystal panel has a larger screen and higher definition.
[0007]
The horizontal electric field type liquid crystal mode has begun to be mass-produced as a large screen wide viewing angle liquid crystal mode. However, problems of afterimages and display unevenness frequently occur, and a lot of know-how is required for stable production.
[0008]
The present invention provides a means for solving these problems, and the object of the present invention is to increase the investment efficiency of a large-scale liquid crystal display device mass production plant and to make an ultra-large and ultra-wide viewing angle liquid crystal display device inexpensive. An object of the present invention is to provide a method capable of producing with high yield.
[0009]
[Means for Solving the Problems]
In order to solve the above problems and achieve the above object, the present invention uses the following means.
[0010]
A pair of substrates at least one of which is transparent, a liquid crystal composition layer sandwiched between the substrates, and a plurality of scanning lines and video signal wirings arranged in a matrix on the facing surface of one of the substrates And a liquid crystal display device including a pixel electrode and an active element,
[Means 1] The following steps were used as a process for forming the scanning lines.
i) A titanium oxide film, a zinc oxide film, or a composite oxide film of titanium oxide and zinc oxide is formed on the substrate.
ii) Palladium ions, silver ions or ruthenium ions are adsorbed thereon.
iii) Irradiating the substrate with ultraviolet rays using a scanning line photomask.
iv) Wash away the metal ions in the area not irradiated with ultraviolet rays.
v) Growing copper, silver, or ruthenium using electroless plating using the metal reduced to the shape of the scanning line as a scaffold.
In addition to this, palladium ions are printed on the substrate in a scanning line shape using a printing method, and H ₂ An electroless plating method may be used after reduction with plasma or the like.
[0011]
[Means 2] Electroless Ni plating or electric field Ni plating is applied to the surface of copper, silver or ruthenium formed by means 1.
[0012]
[Means 3] The deposited film thickness of copper, silver, or ruthenium formed using the means 1 was set to 2 μm or less.
[0013]
[Means 4] In addition to titanium oxide, in addition to titanium oxide, indium oxide, tin oxide, silicon oxide, aluminum oxide, zirconium oxide, oxidation are used as the components of the metal oxide formed on the substrate in the process of forming the scanning line according to means 1 A composite metal oxide film containing two or more metal oxides that transmit visible light, such as magnesium and tantalum oxide, is used.
[0014]
[Means 5] After forming the scanning line by means 1, when depositing the gate insulating film, the semiconductor layer, and the passivation protective film layer of the active element on the substrate, it is partially deposited only on the local area including the effective pixel region. In addition, both of the anti-static protective active element connecting the common electrode and the scanning line and the anti-static protective active element connecting the common electrode and the video signal wiring are completely covered with a passivation film. did.
[0015]
[Means 6] By using a transmitted light amount modulation photomask for the channel portion of the thin film transistor element, the video signal wiring and the pixel electrode are separated and formed simultaneously. ⁺ The layer is also removed to complete the thin film transistor device. By combining this technique and means 1, the photoresist process is used only once.
[0016]
[Means 7] The video signal wiring and the pixel electrode are simultaneously formed by using the means 1 and 5, and then n exposed on the surface. ⁺ The layer is removed, and a passivation film is partially deposited on the entire surface of the substrate or only on the local area including the effective pixel region. Thereafter, an extra passivation film and a semiconductor layer were removed in order to form a channel portion of the thin film transistor, a video signal wiring, and a pixel electrode.
[0017]
[Means 8] Using the means 1 and 5, after depositing the gate insulating film and the semiconductor layer only on the local portion including the effective pixel region, the semiconductor portion of the thin film transistor element is patterned. Thereafter, the video signal wiring and the pixel electrode are formed at the same time, and then the channel portion n of the thin film transistor is formed. ⁺ Remove the layer. Then, a passivation film is deposited only on the local area including the effective pixel area.
[0018]
[Means 9] After forming the video signal wiring and the pixel electrode at the same time using the means 1 and 5, when depositing the transparent conductive film and separating the video signal wiring and the pixel electrode, the metal film of the channel portion of the thin film transistor portion And n ⁺ Remove the layer. Thereafter, a passivation film is partially deposited only in the local area including the effective pixel region.
[0019]
[Means 10] After the gate insulating film is partially deposited only on the local area including the effective pixel region using the means 1 and 5, the semiconductor layer and the etching stopper layer are the entire surface of the substrate or the local area including the effective pixel region. N to deposit only partially and make ohmic contact ⁺ In the case of ion implantation, the layer is partially implanted only in the local area including the effective pixel region. n ⁺ When the layer is deposited by the plasma CVD method, it is partially deposited on the entire surface of the substrate or only on the local area including the effective pixel region. When forming the video signal wiring and the pixel electrode at the same time, an extra n ⁺ After removing both the layer and the semiconductor layer at the same time, a passivation film is partially deposited only on the local area including the effective pixel region.
[0020]
[Means 11] n in means 6, 7, 8, 9 ⁺ N instead of removing the layer ⁺ The layer was oxidized to an insulating film.
[0021]
[Means 12] A susceptor on which a glass substrate is mounted, and a mesh electrode or honeycomb that is grounded by applying a high-frequency voltage to the susceptor electrode in a plasma generating device composed of a mesh electrode or a honeycomb electrode facing the susceptor in parallel. An oxygen plasma discharge is generated between the electrodes. During discharge, the glass substrate is irradiated with ultraviolet light uniformly from an ultraviolet lamp installed on the air side through a quartz glass window.
[0022]
[Means 13] In a plasma generator comprising a susceptor on which a glass substrate is placed, and a plurality of wire electrodes, a plurality of rod-shaped electrodes, or a plurality of strip-shaped electrodes facing the susceptor in parallel, the plurality of electrodes A high frequency voltage having a different phase is applied to the susceptor, thereby generating a horizontal transverse discharge with respect to the susceptor. During this lateral discharge, the glass substrate is irradiated with ultraviolet light uniformly from an ultraviolet lamp installed in the atmosphere through a quartz glass window.
[0023]
[Means 14] In a liquid crystal display device comprising: a scanning line and a video signal wiring on a substrate; a thin film transistor formed at each intersection of the scanning line and the video signal wiring; and a pixel electrode connected to the thin film transistor A two-layer film of a plasma silicon nitride film and a diamond-like carbon film or a two-layer film of a plasma silicon nitride film and an amorphous carbon film is used for the gate insulating film of the thin film transistor element.
[0024]
[Means 15] A liquid crystal display device comprising: a scanning line; a video signal wiring; a thin film transistor formed at each intersection of the scanning line and the video signal wiring; and a pixel electrode connected to the thin film transistor element. The gate insulating film of the thin film transistor element is formed of an aluminum anodic oxide film, a plasma silicon nitride film, and a diamond-like carbon film, or an aluminum anodic oxide film, a plasma silicon nitride film, and an amorphous carbon film. A three-layer film of a film, a silicon oxide film, an amorphous carbon film, or a plasma silicon nitride film, a silicon oxide film, and a diamond-like carbon film is used.
[0025]
[Means 16] A semiconductor layer of the thin film semiconductor element is formed of a polysilicon layer, an amorphous silicon layer, and n. ⁺ 3 layers of amorphous silicon layer or polysilicon layer and amorphous silicon layer and n ⁺ Three microcrystal silicon layers, or an amorphous silicon carbide layer, an amorphous silicon layer, and n ⁺ 3 layers of amorphous silicon layers, or amorphous silicon carbide layer and amorphous silicon layer and n ⁺ It was composed of three layers of microcrystal silicon layers.
[0026]
[Means 17] A diamond-like carbon layer, a polysilicon layer, an amorphous silicon layer, and n in the active element according to the means 14 and 15. ⁺ 4 layers of amorphous silicon layer, or amorphous carbon layer, polysilicon layer, amorphous silicon layer and n ⁺ Four layers of amorphous silicon layers are continuously formed without exposing each interface to the atmosphere.
[0027]
[Means 18] In the active element described in the means 14 and 15, the diamond-like carbon layer or the amorphous carbon layer is formed to have a film thickness of 2 angstroms to 2000 angstroms.
[0028]
[Means 19] A plurality of scanning lines arranged in a matrix on a facing surface of any one of the substrate and a liquid crystal composition layer sandwiched between the pair of substrates transparent at least one of the substrates And video signal wiring, and a pixel electrode paired with the common electrode, and an active film, and an alignment film formed on both of the common electrode and the pixel electrode paired with the common electrode The height of the alignment film formed in the region where the light of the backlight sandwiched between both electrodes is transmitted is higher than the height of the alignment film.
[0029]
[Means 20] The convex region formed in the region through which the backlight is transmitted, sandwiched between both the common electrode and the pixel electrode paired with the common electrode in the device 19, is formed on both the common electrode and the pixel electrode. On the other hand, the thickness was set to about 0.1 μm to 3 μm.
[0030]
[Means 21] A liquid crystal composition layer sandwiched between a pair of substrates, at least one of which is transparent, and a plurality of scans arranged in a matrix on the facing surface of one of the substrates In a liquid crystal display device having a pixel electrode and an active element that are paired with a line and a video signal wiring, and a common electrode, an alignment film on the substrate side on which the active element is formed or a substrate on which the active element is formed and a color filter substrate In both alignment films, polymer antistatic materials (polyethylene oxide, polyether ester amide, polyether amide imide, ethylene oxide-epifurohydrin copolymer, polyethylene glycol methacrylate copolymer, carbobetaine graft copolymer, boron ester (Polymer charge transfer type conjugate) is mixed by about 0.1% to 10% The sheet resistance of the alignment film in Rukoto 1 × 10 ¹² From Ω / □ to 1 × 10 ¹⁴ The range was set to Ω / □.
[0031]
[Means 22] Polyamic acid, which is a polymer-type antistatic material used in Means 21, such as polyethers, betaines, and boron esters in the main chain, and polyamic acid using tetracarboxylic acid compound as a raw material. By blending with a type alignment film or a polyimide type alignment film, the sheet resistance value of a horizontal electric field mode liquid crystal mode alignment film is 1 × 10 ¹² From Ω / □ to 1 × 10 ¹⁴ The range was set to Ω / □.
[0032]
[Means 23] Using the alignment film described in Means 21 or 22, only a fluorine-based liquid crystal was used in the liquid crystal composition sandwiched between two substrates.
[0033]
[Means 24] Polyethers, which are polymer-type antistatic agents described in Means 21, betaines, and boron esters are mixed in the polymer adhesive to reduce the sheet resistance of the adhesive to 1 × 10. ⁷ From Ω / □ to 1 × 10 ¹² A polarizing plate set in the range of Ω / □ is used.
[0034]
[Means 25] The surface of the base film of the polarizing plate used in the means 24 was coated with diamond-like carbon.
[0035]
[Means 26] A plurality of scans arranged in a matrix on a facing surface of one of the substrates, a pair of substrates at least one of which is transparent, a liquid crystal composition layer sandwiched between the substrates, and In a liquid crystal display device having a pixel electrode and an active element that are paired with a line and a video signal wiring and a common electrode, titanium or A resistive thin film containing an oxide of indium, tin, or zinc was applied by dipping, spin coating, or flexographic printing, and baked.
[0036]
[Means 27] The sheet resistance value of the resistance thin film formed by the manufacturing method of the means 26 is 10 ⁸ Ω / □ -10 ¹³ The range was set to Ω / □.
[0037]
[Means 28] When forming the active matrix type liquid crystal display cell, the main seal is formed by the alignment film over the entire area around the main seal on both sides of the bonded portion of the main seal.
[0038]
[Means 29] A pair of substrates at least one of which is transparent, a liquid crystal composition layer sandwiched between the substrates, and a plurality of substrates arranged in a matrix on the facing surface of one of the substrates In the manufacturing process of the liquid crystal display device provided with the scanning line and the video signal wiring, the entire outermost region of the substrate was continuously applied with polyimide when the polyimide alignment film was applied to the substrate.
[0039]
[Means 30] A plurality of scanning lines arranged in a matrix on a facing surface of any one of the substrate and a liquid crystal composition layer sandwiched between the pair of substrates transparent at least one of the substrates In the liquid crystal display device provided with the video signal wiring, the following process is used as a process for forming a black mask on a transparent substrate.
i) A titanium oxide film or a zinc oxide film or a composite oxide film of titanium oxide and zinc oxide is formed on the substrate.
ii) Irradiate ultraviolet rays using a photomask for black mask. In this case, the portion where the black mask is formed is not irradiated with ultraviolet rays.
iii) Adsorbing water to the region irradiated with ultraviolet rays.
iv) Apply black ink to the area where water is not adsorbed.
[0040]
[Means 31] The following steps are used as a process for forming a black mask on a transparent substrate.
i) A titanium oxide film, a zinc oxide film, or a composite oxide film of titanium oxide and zinc oxide is formed on the substrate.
ii) A silicon-based or fluorine-based rinsing process is performed on the metal oxide film.
iii) Irradiate ultraviolet rays using a photomask for a black mask. In this case, only the portion where the black mask is formed is irradiated with ultraviolet rays.
iv) A black ink is applied to a region irradiated with ultraviolet rays.
[0041]
[Means 32] R, G and B color filters were formed on the substrate on which the black mask was formed by the process of means 30 or 31, using the ink jet method or the flexographic printing method.
[0042]
[Means 33] The thickness of the titanium oxide film, the zinc oxide film, or the composite oxide film of titanium oxide and zinc oxide used in the means 1, 30, 31 is set to 0.1 μm to 10 μm.
[0043]
[Means 34] In the active element according to the means 14 or 15, the diamond-like carbon layer, the amorphous silicon layer, and the n ⁺ Three layers of amorphous silicon layers, or diamond-like carbon layer and amorphous silicon layer and n ⁺ Three microcrystal layers, or amorphous carbon layer and amorphous silicon layer and n ⁺ 3 layers of amorphous silicon layer, or amorphous carbon layer and amorphous silicon layer and n ⁺ Three layers of microcrystal silicon layers are continuously formed without exposing each interface to the atmosphere.
[0044]
[Means 35] In the active device described in means 16, the polysilicon layer and the amorphous silicon carbide layer are formed with a film thickness of 2 angstroms to 500 angstroms, and the amorphous silicon layer is formed with a film thickness of 300 angstroms to 2000 angstroms.
[0045]
[Action]
A cross-sectional view of a conventional TN liquid crystal mode thin film transistor element substrate is as shown in FIG. A cross-sectional view of a conventional thin film transistor element substrate for the IPS liquid crystal mode is as shown in FIG. Both use a manufacturing method in which three layers of a gate insulating film, a semiconductor film, and a passivation film are deposited on the entire surface of a glass substrate. The photomask process is required 5 times in all processes. As the metal of the scanning line, molybdenum, titanium, chromium, tantalum or the like is used as an alloy system of aluminum and a cap metal.
In the conventional manufacturing method, these metals are deposited on a glass substrate by a vacuum sputtering method, and then a photoresist is applied, exposed, developed, and etched, and then the photoresist is removed. The larger the glass substrate, the larger the vacuum device and the higher the cost. Even more problematic is that the throughput tends to decrease as the board becomes larger.
For this reason, in order to increase the production volume, a method of creating a large clean room and increasing the number of devices was used. Investment costs and running costs have become very high. There was a limit to cost reduction when the conventional process was adopted.
[0046]
By using the means 1, 2, 3, 4 and 33, it becomes possible to form a low resistance copper scanning line without using an expensive vacuum apparatus.
In the electroless plating process, batch processing is possible, and the throughput can be greatly improved. Since a resist process is not used, a resist peeling process is not necessary, and the process can be greatly shortened.
[0047]
By using means 1, 5, 6, 7, 8, 9, and 10, the photolitho process, which has been required at least 5 times in the past, can be completed in 2 to 3 times, and the process can be greatly shortened. Significant cost reduction and productivity improvement can be realized. The clean room area of the mass production factory can be reduced, and the cost of initial investment can be greatly reduced because expensive resist coaters, exposure equipment, development equipment, and vacuum sputtering equipment are less than half the conventional one.
[0048]
By using the means 11, 12 and 13, the semiconductor layer of the thin film semiconductor transistor element can be reduced to half or less of the conventional one, so that the production efficiency of the plasma CVD apparatus can be improved. n ⁺ The rate of oxidizing the layer and the semiconductor layer in which phosphorus is diffused is greatly increased by strongly irradiating ultraviolet light into the oxygen plasma. Conventionally, it has not been used for mass production because of its slow oxidation rate, but by using means 12 and 13, it can be used for mass production. n ⁺ When etching a layer, chlorine-based or fluorine-based gas must be used, and the running cost of the exhaust gas treatment device was also necessary. By using this process and this device, a process with low running cost can be realized. .
[0049]
By using the means 14, 15, 16, 17, 18, 34, 35, the characteristics of amorphous silicon having a low electron mobility can be greatly improved. Even if the display area is increased, beautiful images cannot be expressed unless the resolution is improved. A conventional thin film transistor using only amorphous silicon has a limit of about 1200 scanning lines, but the number of scanning lines can be increased to about 2000 by the structure of the present invention. The process itself is almost the same as the conventional process, and the cost increase can be kept very small.
[0050]
By using means 19 and 20, it is possible to drastically reduce the rubbing process failure in the horizontal electric field type liquid crystal production process. The conventional lateral electric field type thin film transistor element substrate is as shown in FIG. 2, and the region where the light of the backlight is transmitted is dented more than the common electrode or the pixel electrode, and a rubbing process is performed by applying a polyimide alignment film. The structure of the rubbing cloth was hard to touch. When the rubbing density was increased, the alignment film was rubbed and thinned, resulting in frequent film peeling.
By using the means 19 and 20 of the present invention, the alignment film in the region through which the light of the backlight is transmitted is easily rubbed, and no film peeling occurs and the yield can be greatly improved.
[0051]
By using the means 21, 22, 23, 28, the reliability of the horizontal electric field type liquid crystal display device can be greatly improved. In the conventional horizontal electric field mode liquid crystal mode, the liquid crystal itself has a resistance in order to prevent an afterimage. In order to reduce resistance, cyano liquid crystals were blended with fluorine liquid crystals. Cyano-based liquid crystal compounds are easily hydrolyzed and have poor temperature characteristics. When a light guide plate type backlight unit is used, a phenomenon occurs in which the temperature difference between the region near the lamp and the center of the screen is large and the resistance value of the liquid crystal in the liquid crystal cell is greatly different. For this reason, unevenness in the periphery of the display screen area is likely to occur frequently. When the present invention is used, the liquid crystal composition can use only a fluorine-based liquid crystal having a proven record of reliability, so that the occurrence of unevenness is drastically reduced. Furthermore, if moisture enters the gap between the active substrate and the CF substrate, unevenness around the seal tends to occur. However, if a polyimide alignment film is printed on both sides of the seal, water will not enter and reliability can be improved. .
[0052]
By using the means 24, 25, 26, and 27, it is possible to prevent image change due to static electricity of the horizontal electric field type liquid crystal display device. In a conventional horizontal electric field type liquid crystal display device, a transparent conductive film having a thickness of several hundreds of inches is formed on the outer surface of an active matrix substrate or a CF substrate by vacuum sputtering. This method has a high apparatus cost and a low throughput. By using this method, low-cost static electricity countermeasures are possible.
[0053]
By using the means 29, even after the two substrates are bonded together, the hydrofluoric acid solution does not penetrate into the gap between the bonded substrates even if the bonded glass substrate is put into the hydrofluoric acid solution. According to the present invention, it is possible to thinly etch the bonded glass substrate without increasing the cost. Even if a 40-inch liquid crystal panel is made, the glass plate thickness can be reduced to 1 mm or less as a whole, and a reduction in thickness and weight can be realized.
[0054]
By using the means 30, 31, 32, 33, a resist process is not necessary, and it is possible to produce a color filter in one exposure process. The production process can be greatly shortened and simplified, enabling mass production even in a small clean room, resulting in a significant cost reduction.
[0055]
【Example】
[Embodiment 1] FIG. 3 is a process explanatory diagram of the first embodiment of the present invention.
A titanium oxide film, a zinc oxide film, or a composite oxide film of titanium oxide and zinc oxide is formed on a glass substrate. Palladium ions are adsorbed thereon. The substrate is irradiated with ultraviolet rays using a scanning line photomask.
Wash away palladium ions. Next, copper is grown on the palladium using an electroless plating technique. In this process, a titanium oxide film or a zinc oxide film is used, but these films have a photocatalytic effect that creates electrons and holes when exposed to ultraviolet rays, and only palladium ions irradiated with ultraviolet rays are reduced to metallic palladium. Is done. The metallic palladium remains on the substrate and the palladium ions are washed away. Copper is deposited using the remaining metallic palladium as a nucleus.
Any metal oxide film that is transparent to visible light and has a photocatalytic effect to ultraviolet light may be used other than titanium oxide or zinc oxide.
In the present invention, palladium ions are used, but anything may be used as long as it becomes a scaffold for electroless plating. Ions such as gold, ruthenium, rhodium, osmium and iridium platinum are also applicable. In terms of cost, silver, ruthenium, and palladium are inexpensive. Silver, gold, rhodium and iridium are excellent in terms of resistivity. After copper is deposited using the palladium metal as a nucleus, since copper is easily oxidized, Ni plating is applied to the surface of copper. The Ni plating may be electroless plating or electroplating.
In the present invention, a photomask for a scanning line is used to irradiate a necessary part with ultraviolet rays. However, even in a method of scanning spot-like ultraviolet rays without using a photomask, the necessary part is irradiated with ultraviolet rays to form a scanning line. It can be formed.
As shown in FIG. 67, after using the printing method from the beginning to adsorb palladium ions in the shape of the scanning line, ₂ Palladium ions are reduced to metallic palladium by plasma treatment or the like. Thereafter, a method of growing copper on metallic palladium using an electroless plating method is also possible.
When the metal grown by electroless plating is copper, it is easy to be oxidized in a later process, so it is better to apply Ni plating to the surface of copper.
[0056]
The method of forming the scanning wiring used in the means 1 can be used not only for the liquid crystal but also for the scanning wiring of a plasma display panel or EL display panel. It can be applied not only to glass substrates but also to TAB, CSP, and BGA copper wiring using polyimide tape, and copper wiring formation of printed circuit boards using glass epoxy substrates. It can also be used as a copper wiring process for ICs. In this case, Ta or TaN is deposited as a barrier layer by a sputtering method, and then palladium is continuously deposited by the same sputtering method, followed by electroless plating of copper. In the electroplating method, unevenness in film thickness is likely to occur depending on the shape of the surface, but this does not occur in electroless plating. When copper is embedded in a deep hole, a barrier layer of Ta or TaN is deposited by sputtering, and then palladium ions are adsorbed. ₂ It is preferable to reduce the palladium ions using a reduction method by plasma treatment, and then grow the copper by electroless plating to fill the holes.
[0057]
[Embodiment 2] FIG. 4 is a cross-sectional view of a second embodiment of the present invention.
Although the transparent photocatalyst film (19) is coated on the entire surface of the glass substrate, the photocatalyst film may be partially coated only in the region where the scanning line is formed.
After forming the scanning line (gate electrode) (2) and the common electrode (18) using the method described in Example 1, the gate insulating film (4), the amorphous silicon semiconductor film (5), and n ⁺ Amorphous silicon film (6) is partially deposited locally. In the post-deposition scanning line terminal portion (3), the metal electrode is exposed. Then, in order to form the video signal wiring (7), the liquid crystal drive electrode (17), and the scanning line terminal joint metal electrode (25) at the same time, a metal film is deposited by sputtering. When a positive resist is exposed using a transmitted light amount modulation photomask (FIG. 50... Photomask cross section) (FIG. 60... Photomask plan view), a cross section as shown in FIG. 61 is obtained. The transmitted light amount modulation photomask used in the present invention adjusts the average transmitted light amount by using a pattern of about 1/10 to 1/5 of the resolving power. However, HEBS (High Energy Beam Sensitive) glass of Canyon Materials, USA Even if a plate is used, a similar transmitted light amount modulation photomask can be produced.
The positive resist film thickness (65) in the unexposed area is about 1.2 to 2.0 μm, and the positive resist film thickness (66) in the exposed area of the semi-transmission light amount area is around 0.05 to 0.2 μm. To do. FIG. 62 is a diagram of the process flow used in the present invention. n ⁺ The metal layer above the layer is processed by wet etching to leave only the video signal wiring, the liquid crystal driving pixel electrode, and the terminal area. Next, n in areas not required for dry etching ⁺ The layer and the non-doped semiconductor layer are removed. Then, the thin positive resist remaining in the channel portion {circle around (63)} of the thin film transistor element is removed by plasma ashing, and then the metal layer and n in the channel portion are removed. ⁺ The layer is removed by the same wet and dry etching as before. Next, after stripping the photoresist, a passivation film is locally partially deposited to complete the active element substrate.
The photomask process is only performed twice in all processes, but the photoresist process is used only once.
[0058]
[Embodiment 3] FIG. 5 is a cross-sectional view of a third embodiment of the present invention. In this process, the common electrode is not formed at the same time as the scanning line, but is finally formed on the passivation film. The photomask process is performed three times in all steps. There are only two photoresist steps.
[0059]
[Embodiment 4] FIG. 6 is a sectional view of a fourth embodiment of the present invention. Although it is almost the same as the second embodiment, a passivation film is deposited on the entire surface of the substrate, and then the terminal portion is etched to form a contact hole. There are three photomask processes in all steps. There are only two photoresist steps.
[0060]
[Embodiment 5] FIG. 7 is a sectional view of a fifth embodiment of the present invention. After forming the scanning line (2) according to the first embodiment, the gate insulating film (4) is partially deposited locally. Amorphous silicon semiconductor layer (5) and n ⁺ The amorphous silicon film (6) is deposited on the entire surface of the substrate. Next, after depositing a metal film on the entire surface, the metal film disappears after the metal film is patterned by wet etching or dry etching in order to simultaneously form the video signal wiring (7) and the liquid crystal drive electrode (17). Region n ⁺ Similarly, the amorphous silicon film is removed by etching. Then, a passivation film is deposited on the entire surface of the substrate, and the passivation film and the amorphous silicon semiconductor film in an extra region are removed in order to separate the channel portion of the thin film transistor element, the video signal wiring, and the liquid crystal driving electrode. At the same time, the excess passivation film and the amorphous silicon semiconductor film covering the electrode of the terminal portion are also removed. The passivation film may be a local partial deposition instead of the entire surface deposition.
[0061]
[Embodiment 6] FIG. 8 is a sectional view of a sixth embodiment of the present invention.
This is a process based on the same concept as in the fifth embodiment. After forming the scanning line (2) according to Example 1, the gate insulating film (4), the amorphous silicon semiconductor layer (5) and n ⁺ An amorphous silicon film (6) is partially deposited locally. The metal electrode is exposed at the terminal portion (3) of the scanning line after deposition. Next, in order to form the video signal wiring (7) and the liquid crystal drive electrode (17) simultaneously, a metal film is deposited by sputtering. After the metal film is patterned using wet etching or dry etching, the n of the portion where the metal film disappears ⁺ The layer is similarly removed by dry etching. Then, a passivation film is deposited on the entire surface of the substrate, and an extra region of the passivation film and the amorphous silicon semiconductor layer are removed in order to separate the channel portion of the thin film transistor element, the video signal wiring, and the liquid crystal driving electrode. The photomask process is performed three times in all steps. There are only two photoresist steps.
[0062]
[Embodiment 7] FIG. 9 is a sectional view of a seventh embodiment of the present invention. After forming the scanning line (2) according to Example 1, the gate insulating film (4), the amorphous silicon semiconductor layer (5) and n ⁺ An amorphous silicon film (6) is partially deposited locally.
Next, a metal film is deposited on the entire surface of the substrate, and the video signal wiring and the liquid crystal drive electrode are patterned. N of the removed part of the metal ⁺ After removing the amorphous silicon film and the amorphous silicon semiconductor layer, a transparent conductive film and a metal film are again deposited on the entire surface of the substrate. Next, in order to electrically isolate the video signal wiring and the liquid crystal drive electrode, the first metal film of the channel portion of the thin film transistor element and n ⁺ The amorphous silicon film is removed. Finally, a passivation film is deposited locally. The photomask process is performed three times in all steps. There are only two photoresist steps.
[0063]
[Embodiment 8] FIGS. 10, 12 and 51 are sectional views of an eighth embodiment of the present invention. FIGS. 10 and 12 show the photocatalyst layer formed on only one side of the active element side on the glass substrate, and FIG. 51 shows the photocatalyst layer formed on both sides of the substrate. After simultaneously forming the scanning line (2) and the common electrode (18) according to Example 1, the gate insulating film (4), the amorphous silicon semiconductor film (5), and n ⁺ An amorphous silicon film (6) is partially deposited locally. Next, the amorphous silicon semiconductor film and n ⁺ The amorphous silicon film is patterned to form a channel portion of the transistor. Thereafter, after depositing a metal film on the entire surface of the substrate, the image signal wiring (7) and the liquid crystal driving pixel electrode (17) are patterned. Next, n of the channel portion of the transistor ⁺ Finally, a passivation film is deposited locally after removing the layer. In the case of FIG. 12, an amorphous silicon layer exists under the liquid crystal driving pixel electrode (17), but it can be formed by the same process.
The photomask process is performed three times in all steps. There are only two photoresist steps.
[0064]
[Embodiment 9] FIG. 11 is a sectional view of a ninth embodiment of the present invention. After forming the scanning line (2) according to Example 1, the gate insulating film (4), the amorphous silicon semiconductor film (5), and the etching stopper film (26) are partially deposited locally. The metal electrode is exposed at the terminal portion (3) of the post-deposition scanning line. Next, the etching stopper film 26 is left only in the region for forming the channel portion of the transistor, and all the etching stopper film other than the semiconductor layer around the effective pixel region is removed in the other regions. Then n to make ohmic contact ⁺ Amorphous silicon film or n ⁺ A microcrystalline silicon layer is deposited locally. It is also possible to obtain ohmic contact by performing ion shower doving and ion implantation only on the effective pixel region and the protection transistor region for preventing static electricity.
Next, a metal film is deposited on the entire surface of the substrate in order to form video signal lines and liquid crystal drive electrodes. After patterning the video signal wiring and the liquid crystal drive electrode, ⁺ The amorphous silicon film and the amorphous silicon semiconductor film are removed. Finally, a passivation film is deposited locally. In this step, the last passivation film is not absolutely necessary. The photomask process is performed three times in all steps. There are only two photoresist steps.
[0065]
[Embodiment 10] FIGS. 13, 14, 15, 16, 52, and 53 are a plan view of a circuit model, circuit layout, and circuit pattern according to a tenth embodiment of the present invention. The protective active element (31) for countermeasures against static electricity is formed on two or more sides of the effective pixel. The junction region between the common electrode and the video signal wiring and the junction region between the common electrode and the scanning line are formed by depositing a gate insulating film. The protective active element for static electricity countermeasures and the junction region are all covered with a passivation film that exists outside the region.
52 and 53 are plan views of the static electricity protection active element formed by the process described in the eighth embodiment. It is possible to form the same protective active element for static electricity countermeasures in the processes described in the third, fourth, fifth, sixth and seventh embodiments. The larger the LCD screen, the greater the electrostatic charge energy and the greater the yield on the mass production line.
Even if the photomask process and the photoresist process are reduced, a high yield cannot be secured unless an anti-static protective active element can be formed.
[0066]
[Embodiment 11] FIGS. 17, 18, 25 and 54 are sectional views of an eleventh embodiment of the present invention. As the glass substrate becomes larger, the surface area grounded on the ground side with respect to the surface area of the discharge electrode of the plasma CVD apparatus for depositing the amorphous silicon semiconductor tends to decrease, and the surface plasma potential of the glass substrate increases. For this reason, the film quality of the plasma nitride film is improved, but when an amorphous silicon semiconductor is deposited, damage can be obtained at the interface of the plasma nitride film. For this reason, the characteristics of the thin film transistor element tend to deteriorate as the glass substrate becomes larger. Further, as the display screen becomes larger, higher definition is required, and the operation time of the scanning line is 10 μsec or less. In order to improve the performance of the thin film transistor, in the present invention, a polysilicon semiconductor layer is formed at the interface between the gate insulating film and the amorphous silicon semiconductor. The polysilicon semiconductor layer and the amorphous silicon semiconductor layer are continuously deposited without breaking the vacuum. A film thickness of 300 to 500 mm is sufficient for the polysilicon semiconductor layer.
[0067]
[Embodiment 12] FIGS. 19, 20, 26, and 55 are sectional views of a twelfth embodiment of the present invention. In the present invention, a diamond-like carbon layer or an amorphous carbon layer and a polysilicon semiconductor layer are formed at the interface between the gate insulating film and the amorphous silicon semiconductor in order to improve the performance of the thin film transistor as in the case of the eleventh embodiment. The carbon layer, the polysilicon semiconductor layer, and the amorphous silicon semiconductor layer are continuously deposited in three layers without applying a vacuum. If the carbon layer is about several liters, the effect is sufficient and the electron mobility can be greatly improved.
[0068]
[Embodiment 13] FIGS. 21, 22 and 56 are sectional views of a thirteenth embodiment of the present invention. In Example 11 and Example 12, n of the channel portion of the thin film transistor ⁺ The amorphous silicon film was removed by dry etching, but in this case, the amorphous silicon semiconductor film (32) had to have a thickness of at least about 1000 mm. In the case of the present invention, since the polysilicon semiconductor layer is about 300 to 500 mm, sufficiently satisfactory characteristics can be obtained if the amorphous silicon semiconductor film (32) is about 500 mm. n ⁺ Amorphous silicon film or n ⁺ The thickness of the microcrystalline silicon film is about 50 to 100 mm if an ohmic contact can be obtained. In the case of the present invention n ⁺ Amorphous silicon film and n ⁺ A process of forming a microcrystal silicon film into an insulating film by plasma oxidation is used.
[0069]
[Embodiment 14] FIGS. 23, 24 and 57 are sectional views of a fourteenth embodiment of the present invention. Similar to Example 12, a diamond-like carbon layer or an amorphous carbon layer and a polysilicon semiconductor layer are formed at the interface between the gate insulating film and the amorphous silicon semiconductor. The carbon layer, the polysilicon semiconductor layer, and the amorphous silicon semiconductor film are continuously deposited in three layers without applying a vacuum. The carbon layer has a sufficient effect if it is about several liters. In the case of the present invention as in Example 13, n ⁺ In order to oxidize the plasma without etching the layer, it is sufficient that the amorphous silicon semiconductor film (32) is about 500 mm.
[0070]
[Embodiment 15] FIGS. 27 and 58 show a fifteenth embodiment of the present invention. It is sectional drawing of the plasma oxidation apparatus used with the process of Example 13 and Example 14. FIG. n ⁺ Amorphous silicon film and n ⁺ The microcrystal silicon film is easily oxidized, but the non-doped amorphous silicon semiconductor film (32) has a low oxidation rate. Unless the impurity phosphorous diffusion layer is completely oxidized, the leakage current of the thin film transistor elements of the thirteenth and fourteenth embodiments cannot be reduced. In the apparatus of the present invention, in order to stop the oxidation rate, a lamp (36) for irradiating the active element substrate with strong ultraviolet rays is installed.
Plasma oxidation treatment is performed in the state of ultraviolet irradiation. A high frequency voltage is applied to the susceptor on which the substrate is placed. There are cases where ultraviolet rays can be transmitted through the openings of the mesh-shaped ground electrode (39) and cases where an alternating voltage can be applied to the openings and the ultraviolet rays can be transmitted through the openings of the openings. is there.
[0071]
[Embodiment 16] FIGS. 29, 30, 31, and 66 are sectional views of a sixteenth embodiment of the present invention. In the conventional structure, as shown in FIG. 28, the alignment film in the light transmitting region is in a position recessed from the alignment film applied on the common electrode (18) and the liquid crystal drive electrode (17). For this reason, when a rubbing treatment is performed with a rubbing cloth, the tip of the cloth does not hit the alignment film in a region where light is sufficiently transmitted. In the horizontal electric field mode liquid crystal mode, in the case of the conventional structure, the rubbing density may not be sufficient. Furthermore, since the active pixel substrate of the horizontal electric field type is covered with the effective pixel region by the plasma nitride film, the adhesive force with the alignment film is very weak. It was easy to occur frequently. In the present invention, contrary to the conventional structure, the position of the alignment film in the light transmitting region is at a position protruding from the alignment film applied on the common electrode (18) and the liquid crystal drive electrode (17). For this reason, at the time of rubbing treatment, the tip of the rubbing cloth tends to hit the alignment film, so that a sufficient rubbing density is obtained and stable alignment of liquid crystal molecules is obtained. In FIG. 29, after the common electrode is formed, the transparent planarization insulating film (44) is formed in the region where light is transmitted.
In FIG. 30, after depositing a passivation film, a transparent planarization insulating film (45) is formed in a region where light is transmitted. In FIG. 31, the glass substrate is etched before forming the common electrode {circle over (18)} so that a region through which light is transmitted protrudes. In terms of process, this structure can be accurately reproduced by applying a negative type transparent resist to the effective pixel region and irradiating ultraviolet light from the back surface in the case of FIG. As shown in FIG. 66, the overlap widths 73 and 74 of the transparent flattening insulating film 45 from the electrode edge portion of the common electrode 18 and the liquid crystal drive electrode 17 to the inside of the electrode are on the back surface. By controlling the direction of light for exposure, it can be freely controlled from about 0.1 μm to about 3 μm. By covering the electrode edge portion as in the present invention, the electric field concentration at the electrode edge portion can be alleviated, so that the occurrence of disclination can be prevented.
[0072]
[Embodiment 17] FIGS. 68, 70, 72, and 74 show a seventeenth embodiment of the present invention. The aluminum alloy gate metal (76) is anodized to form an aluminum anodized film (77), and then a plasma nitride film (78) is deposited. Thereafter, an amorphous carbon film or a diamond-like carbon film is deposited, and then an amorphous silicon semiconductor film (32) and n ⁺ An amorphous silicon film (6) is deposited. The carbon film is left only in the region where the amorphous silicon film is present, and the carbon film (34) is not left in the region where the amorphous silicon film is not present. This is because when the carbon film {circle over (34)} remains in a region other than the amorphous silicon film, the video signal wiring is likely to be broken frequently. If the carbon film is about several tens of meters, there is an effect of reducing the interface state, and the electron mobility of the thin film transistor element can be greatly improved.
[0073]
[Embodiment 18] FIGS. 69, 71, 73 and 75 show an eighteenth embodiment of the present invention. After depositing the plasma nitride film 78 on the scanning line 2, a silicon oxide film is deposited. Thereafter, an amorphous carbon film or a diamond-like carbon film is deposited, and then an amorphous silicon semiconductor film (32) and n ⁺ An amorphous silicon film is deposited. If the carbon film is about several microns, the electron mobility can be sufficiently improved. Similar to Example 17, the carbon film is left only in the region where the amorphous silicon film of the thin film transistor exists.
The carbon film {circle over (34)} and the amorphous silicon semiconductor film {circle around (32)} and n in both the seventeenth and eighteenth examples, as in the twelfth embodiment ⁺ It is important to improve the thin film transistor characteristics that the amorphous silicon film {circle around (6)} is continuously deposited without breaking the vacuum. In both Example 17 and Example 18, the carbon film has an effect of reducing the interface state density. The carbon film acts as a gate insulating film. In the seventeenth and eighteenth embodiments, the gate insulating film has a three-layer structure, and a short circuit between the scanning line and the video signal wiring can be greatly reduced.
[0074]
[Embodiment 19] FIGS. 32 and 51 show a nineteenth embodiment of the present invention. Transparent high resistance films are coated on both surfaces of the color filter glass substrate (51) and the thin film transistor element glass substrate (1). This film has an antistatic effect and has a sheet resistance of 10 ⁸ Ω / □ to 10 ¹³ It may be in the range of Ω / □. It is formed from a composite metal oxide film such as titanium oxide, tantalum oxide, zirconium oxide, indium oxide and tin oxide. In the case of double-sided formation, a hard film can be obtained by baking after coating by dipping. In the case of single-sided formation, it is baked after being applied by spin coating or flexographic printing.
[0075]
[Embodiment 20] FIGS. 33, 34 and 36 are a sectional view and a plan view of a twentieth embodiment of the present invention. As shown in FIG. 35, the conventional alignment film application shape has no alignment film applied outside the main seal line (55).
In the alignment film application shape of the present invention, the alignment film is applied to both sides of the main seal line (55) as shown in FIG. FIG. 33 is a cross-sectional view when separated into LCD cells. Since the alignment film exists up to the cut end of the glass, it is possible to prevent the cleaning liquid from entering the gap of the LCD cell in the cleaning process after the liquid crystal is injected and the injection port is sealed. For this reason, the infiltration of moisture from the periphery of the seal is reduced, and the occurrence of unevenness around the seal can be prevented. In the horizontal electric field mode liquid crystal mode, since cyano liquid crystal is mixed as a liquid crystal compound, when moisture enters the LCD cell, the cyano liquid crystal is hydrolyzed and the liquid crystal characteristics are easily changed. The present invention can greatly improve this problem.
[0076]
[Embodiment 21] FIGS. 38 and 77 are a plan view and a sectional view of a twenty-first embodiment of the present invention. In the conventional alignment film printing pattern, a polyimide alignment film is applied only to the effective pixel region as shown in FIG. In this case, if the glass substrate is etched in a hydrofluoric acid aqueous solution in a state where the color filter substrate and the active element substrate are bonded together, the hydrofluoric acid aqueous solution penetrates into the gap formed by capillary action. If the periphery of the substrate is scratched with an alignment film pattern as shown in FIG. 38, the cross-sectional shape as shown in FIG. The structure becomes similar to that of FIG. 33 in Example 20, and the hydrofluoric acid aqueous solution is repelled by the alignment film and cannot be soaked into the gap of the glass substrate. The sealing method for preventing the penetration of the aqueous solution by the shape of the alignment film as in the present invention is highly reliable and has a high degree of design freedom. When the entire periphery of the glass substrate cannot be applied with the alignment film, a sufficient sealing effect can be obtained by sealing the portion where the alignment film is not applied with a main seal adhesive as shown in FIG.
[0077]
[Embodiment 22] FIGS. 39, 44, 45, 46, 47, 48, 49, and 50 are structural formulas of polymer antistatic agents used in the present invention.
Conventionally, nonionic surfactant type antistatic agents have been used, but they have a low molecular weight, poor heat resistance, and are easily decomposed. The alignment film easily drops off during cleaning after rubbing, and it causes unevenness unless attention is paid to drying after cleaning. In the present invention, a polymer type antistatic material (polyethylene oxide, polyether ester amide, polyether amide imide, ethylene oxide-epifurohydrin copolymer, polyethylene glycol methacrylate copolymer, carbobetaine graft copolymer, boron ester polymer charge transfer) The sheet resistance value of the alignment film is 1 × 10 by blending with a polyamic acid type alignment film or a polyimide type alignment film. ¹² From Ω / □ to 1 × 10 ¹⁴ It can be controlled within the range of Ω / □. By using the alignment film of the present invention, all the liquid crystals used in the transverse electric field type liquid crystal mode are free from the problem of afterimage even when only fluorine-based liquid crystals are used, and the reliability of the LCD cell is greatly improved. As shown in FIGS. 40, 41, 42, and 43, a polyamic acid using a diamine compound having a boron ester in the main chain and a tetracarboxylic acid compound as a raw material is used as a polyamic acid type alignment film or a polyimide type alignment film. The same effect can be obtained by blending with. Similar effects can be obtained by using polyethers and betaines.
[0078]
[Embodiment 23] FIG. 76 is a sectional view of a twenty-third embodiment of the present invention. By mixing the polymer antistatic agent used in Example 22 into the adhesive of the polarizing plate, the sheet resistance value of the adhesive is 1 × 10. ⁷ From Ω / □ to 1 × 10 ¹² The range is set to Ω / □. If the polarizing plate of this invention is used, the electrostatic trouble at the time of sticking a polarizing plate will reduce, and a yield will improve.
Furthermore, it is possible to make a polarizing plate that cannot be provided with a titanium oxide layer and a diamond-like carbon layer 80 on the surface of the polarizing plate.
[0079]
[Embodiment 24] FIG. 63 is a process explanatory view of the twenty-fourth embodiment of the present invention. A titanium oxide film, a zinc oxide film, or a composite oxide film of titanium oxide and zinc oxide is formed on a glass substrate (51).
Irradiate ultraviolet rays using a photomask for the black mask of the color filter.
In this case, the portion where the black mask is formed is not irradiated with ultraviolet rays.
Next, water is adsorbed in the region irradiated with ultraviolet rays. Then, black ink is applied to an area where water is not adsorbed, and then the substrate is heated to cure the black ink. Next, R, G and B color filters are formed using an ink jet method or a flexographic printing method. FIG. 65 is a cross-sectional view of a color filter substrate made by this process.
[0080]
[Embodiment 25] FIG. 64 is a process explanatory diagram of the 25th embodiment of the present invention. A titanium oxide film, a zinc oxide film, or a composite oxide film of titanium oxide and zinc oxide (19) is formed on a glass substrate (51). A silicon-based or fluorine-based rinsing layer (70) is formed thereon. Irradiate ultraviolet rays using a photomask for a black mask. In this case, only the portion where the black mask is formed is irradiated with ultraviolet rays. Next, black ink is applied to the region irradiated with ultraviolet rays and heated to cure the black ink. Then, the silicon-based or fluorine-based rubbed layer 70 is removed by irradiating the entire surface with ultraviolet rays. Next, R, G and B color filters are formed using an ink jet method or a flexographic printing method. The completed color filter has the cross-sectional structure shown in FIG. The film thickness of the metal oxide film (photocatalyst film) used in Examples 24 and 25 may be about 0.1 μm to 10 μm.
By using the processes of Examples 24 and 25, a color filter process that does not use a photoresist process at all can be produced. The manufacturing process can be greatly shortened, and a large screen color filter can be made at low cost.
[0081]
【The invention's effect】
According to the present invention, the number of photomask processes can be greatly reduced from about 2 to about 3 in all processes of the active element substrate.
Furthermore, since the photoresist process can be reduced from once to about twice, the area of the clean room can be reduced, and the number of exposure apparatuses, cleaning apparatuses, resist-related apparatuses, and clean storage can be greatly reduced. The amount of initial investment can be greatly reduced, and the running cost of the factory can be greatly improved.
Since the process can be shortened, quality control is easy, and the number of operations at the mass production plant can be greatly reduced. Production efficiency is also greatly improved, and active elements with lower costs can be made. The difficulty of alignment treatment and the afterimage problem, which were the most problematic in the liquid crystal mode of the horizontal electric field method, were also solved by the present invention. Since only highly reliable fluorine-based liquid crystal can be used, the time-dependent change due to the heat of the backlight does not occur, and the reliability of the entire LCD module is improved.
Since the color filter substrate of the present invention does not have a photoresist process at all and the pattern printing process using a photomask is only required once, the process can be greatly shortened compared to the conventional color filter process using a pigment resist. Production costs can be greatly reduced.
By using the thin film transistor element of the present invention, the electron mobility can be greatly improved as compared with the conventional amorphous silicon transistor. Further, by using copper having a low resistance for the gate metal, distortion of the scanning signal waveform can be suppressed, and a large-sized high-definition wide viewing angle liquid crystal panel can be realized at low cost.
[Brief description of the drawings]
FIG. 1 is a sectional view of a unit pixel of a conventional vertical electric field type thin film semiconductor substrate.
FIG. 2 is a cross-sectional view of a unit pixel of a conventional lateral electric field type thin film semiconductor substrate.
FIG. 3 is a process flow diagram for forming a resist-free scanning line using the electroless plating method of the present invention.
FIG. 4 is a sectional view of a unit pixel of a lateral electric field type thin film semiconductor substrate of the present invention.
FIG. 5 is a sectional view of a unit pixel of a lateral electric field type thin film semiconductor substrate of the present invention.
FIG. 6 is a sectional view of a unit pixel of a lateral electric field type thin film semiconductor substrate of the present invention.
FIG. 7 is a cross-sectional view of a unit pixel of a lateral electric field type thin film semiconductor substrate of the present invention.
FIG. 8 is a cross-sectional view of a unit pixel of a lateral electric field type thin film semiconductor substrate of the present invention.
FIG. 9 is a cross-sectional view of a unit pixel of a lateral electric field type thin film semiconductor substrate of the present invention.
FIG. 10 is a cross-sectional view of a unit pixel of a lateral electric field type thin film semiconductor substrate of the present invention.
FIG. 11 is a cross-sectional view of a unit pixel of a lateral electric field type thin film semiconductor substrate of the present invention.
FIG. 12 is a cross-sectional view of a unit pixel of a lateral electric field type thin film semiconductor substrate of the present invention.
FIG. 13 is a protection circuit diagram for static electricity countermeasures used in the present invention.
Fig. 14 Protection circuit diagram for static electricity countermeasures
FIG. 15 is a plan view of a thin film semiconductor device substrate of the present invention.
FIG. 16 is a plan view of a thin film semiconductor device substrate of the present invention.
FIG. 17 is a cross-sectional view of a high mobility low leakage current thin film transistor element of the present invention.
FIG. 18 is a cross-sectional view of a high mobility low leakage current thin film transistor element of the present invention.
FIG. 19 is a cross-sectional view of a high mobility, low leakage current thin film transistor element of the present invention.
FIG. 20 is a cross-sectional view of a high mobility, low leakage current thin film transistor element of the present invention.
FIG. 21 is a cross-sectional view of a high mobility low leakage current thin film transistor element of the present invention.
FIG. 22 is a cross-sectional view of a high mobility low leakage current thin film transistor element of the present invention.
FIG. 23 is a cross-sectional view of a high mobility low leakage current thin film transistor element of the present invention.
FIG. 24 is a cross-sectional view of a high mobility low leakage current thin film transistor element of the present invention.
FIG. 25 is a cross-sectional view of a high mobility low leakage current thin film transistor element of the present invention.
FIG. 26 is a cross-sectional view of a high mobility low leakage current thin film transistor element of the present invention.
FIG. 27 shows an ultraviolet light assisted plasma oxidation apparatus according to the present invention.
FIG. 28 is a cross-sectional view of a conventional horizontal electric field mode liquid crystal display pixel electrode.
FIG. 29 is a cross-sectional view of a horizontal electric field mode liquid crystal display pixel electrode of the present invention.
FIG. 30 is a cross-sectional view of a horizontal electric field mode liquid crystal display pixel electrode of the present invention.
FIG. 31 is a cross-sectional view of a horizontal electric field mode liquid crystal display pixel electrode according to the present invention.
FIG. 32 is a sectional view of a color filter substrate for a horizontal electric field mode liquid crystal display according to the present invention.
FIG. 33 is a cross-sectional view of the liquid crystal cell of the present invention.
FIG. 34 is a plan view of an alignment film coating pattern of the present invention.
FIG. 35 is a plan view of the vicinity of an injection port of a conventional liquid crystal cell.
FIG. 36 is a plan view of the vicinity of the injection port of the liquid crystal cell of the present invention.
FIG. 37 is a plan view of a conventional alignment film coating pattern.
FIG. 38 is a plan view of an alignment film coating pattern of the present invention.
FIG. 39: Structural formula of boron polymer compound
FIG. 40 is a structural formula of a diamine compound containing boron.
FIG. 41 shows a structural formula of a diamine compound containing boron.
FIG. 42 shows a structural formula of a diamine compound containing boron.
FIG. 43 shows a structural formula of a diamine compound containing boron.
FIG. 44: Polymer type antistatic agent (polyethylene oxide)
FIG. 45: Polymer type antistatic agent (polyether ester amide)
FIG. 46: Polymer type antistatic agent (polyether amide imide)
FIG. 47: Polymer type antistatic agent (ethylene oxide-epifurohydrin copolymer)
FIG. 48: High-molecular antistatic agent (methoxypolyethylene glycol (meth) acrylate copolymer)
FIG. 49: Polymer type antistatic agent (carbobetaine graft copolymer)
FIG. 50: Polymer type antistatic agent (polymer charge transfer type conjugate)
FIG. 51 is a cross-sectional view of a thin film transistor element substrate for a horizontal electric field mode liquid crystal display according to the present invention.
FIG. 52 is a plan view of the protection transistor element for static electricity countermeasure according to the present invention.
FIG. 53 is a plan view of the protection transistor element for static electricity countermeasures according to the present invention.
FIG. 54 is a cross-sectional view of a high mobility, low leakage current thin film transistor element of the present invention.
FIG. 55 is a cross-sectional view of a high mobility low leakage current thin film transistor element of the present invention.
FIG. 56 is a cross-sectional view of a high mobility, low leakage current thin film transistor element of the present invention.
FIG. 57 is a cross-sectional view of a high mobility low leakage current thin film transistor element of the present invention.
FIG. 58 is an ultraviolet light assisted plasma oxidation apparatus of the present invention.
FIG. 59 is a sectional view of the transmitted light amount adjustment photomask of the present invention.
FIG. 60 is a plan view of the transmitted light amount adjustment photomask of the present invention.
FIG. 61 is a cross-sectional view of a positive resist exposed and developed using the transmitted light amount adjustment photomask of the present invention.
FIG. 62 is a process flow of a thin film transistor element using the transmitted light amount adjustment photomask of the present invention.
FIG. 63 is a process flow of forming a black mask pattern according to the present invention.
FIG. 64 is a process flow of forming a black mask pattern according to the present invention.
FIG. 65 is a cross-sectional view of a color filter using the black mask pattern forming method of the present invention.
66 is a cross-sectional view of an overlap portion of a horizontal electric field mode liquid crystal display pixel electrode, a common electrode, and a planarizing film of the present invention. FIG.
FIG. 67 is a process flow diagram for forming a resist-free scanning line using the electroless plating method of the present invention.
FIG. 68 is a cross-sectional view of a high performance thin film transistor element of the present invention.
FIG. 69 is a cross-sectional view of a high performance thin film transistor element of the present invention.
FIG. 70 is a cross-sectional view of a high performance thin film transistor element of the present invention.
FIG. 71 is a cross-sectional view of the high performance thin film transistor element of the present invention.
FIG. 72 is a cross-sectional view of the high performance thin film transistor element of the present invention.
FIG. 73 is a cross-sectional view of the high performance thin film transistor element of the present invention.
FIG. 74 is a cross-sectional view of the high performance thin film transistor element of the present invention.
FIG. 75 is a cross-sectional view of the high performance thin film transistor element of the present invention.
FIG. 76 is a sectional structural view of the polarizing plate of the present invention.
FIG. 77 is a cross-sectional view of cell attachment of the color filter substrate and the active element substrate of the present invention.
FIG. 78 is a plan view of an alignment film coating pattern according to the present invention and a pattern diagram of a hydrofluoric acid aqueous solution soaking prevention seal adhesive
[Explanation of symbols]
1 …… Glass substrate
2. Scanning line (gate electrode)
3. Scanning line terminal
4 ... Gate insulation film
5. Thin film semiconductor layer (non-doped layer)
6 ... n doped with phosphorus ⁺ Semiconductor layer
7 …… Video signal wiring
8 …… Drain electrode
9 …… Video signal wiring terminal
10: Pixel electrode contact hole
11 …… Scanning line terminal contact hole
12 …… Video signal wiring contact hole
13. Scanning line terminal drive IC junction electrode (transparent electrode)
14 …… Pixel electrode (transparent electrode)
15 …… Video signal wiring terminal drive IC junction electrode (transparent electrode)
16. Passivation film
17 …… Horizontal electric field type liquid crystal drive electrode (pixel electrode)
18 …… Common electrode for horizontal electric field system
19 …… Transparent photocatalytic membrane
20 …… Palladium ion adsorption layer
21 …… Ultraviolet light
22 …… Metallic palladium membrane
23 …… Copper plating film
24 …… Nickel plating film
25 …… Scanning line terminal drive IC junction electrode (metal electrode)
26 …… Etching stopper insulating film
27 …… Effective pixel area peripheral common electrode
28 …… Common electrode terminal
29 …… Locally deposited region of gate insulating film
30 ... Local deposition region of passivation film
31 …… Protective active element for static electricity countermeasures
32 …… Amorphous silicon layer
33 …… Polysilicon layer
34 …… Amorphous carbon layer or diamond-like carbon layer
35 …… n ⁺ A layer in which the a-si layer is oxidized to form an insulating film
36 …… UV lamp
37 …… UV reflective mirror
38 …… Quartz window glass
39 …… Wire mesh electrode
40 …… Active matrix substrate
41 …… Susceptor electrode
42 …… Rf high frequency power supply
43 …… Alignment film
44 …… Transparent planarization insulating film
45 …… Transparent negative photo flattening film
46 …… Glass substrate etching area
47 …… Overcoat film for preventing electrostatic charge
48 …… Resin BM (Black Mask)
49 …… Color filter layer
50 …… Transparent overcoat film
51 …… Color filter glass substrate
52 …… Alignment film inside LCD cell / effective screen
53 …… Alignment film outside LCD cell / effective screen
54 …… Main seal material
55 …… Main seal line
56 ... Liquid crystal inlet sealing material
57 …… Alignment film for preventing glass etchant penetration
58 …… Wire electrode for transverse discharge
59 …… Quartz glass substrate for photomask
60 …… Translucent photomask region
61 …… Photomask metal (Cr or Mo)
62 …… Video signal wiring photomask complete blocking area
63 …… Transistor region of transistor / channel
64 …… Drain electrode photomask complete blocking region
65 …… Positive resist UV exposure complete film thickness after development
66... Film thickness after development of positive resist UV exposure semi-transmissive region
67 …… Positive resist
68 …… Soaking water
69 …… Black ink
70: Ink repulsion treatment layer
71 …… Overcoat film
72 …… Color filter layer
73 …… Overlap length of common electrode and planarization film
74 …… Overlap length of pixel electrode and planarization film
75 …… Printed palladium ion layer
76 …… Aluminum alloy scanning line
77 …… Aluminum oxide film
78 …… Gate insulation film (plasma CVD silicon nitride film)
79 …… Gate insulation film (silicon oxide film)
80 …… Diamond-like carbon layer
81 …… Base film
82 …… Polarizing layer
83. Transparent resistance adhesive layer for static electricity countermeasures
84 …… Titanium oxide film
85 …… Anti-soaked sealant adhesive for hydrofluoric acid solution (same material as LC cell main sealant)

Claims (4)

A pair of substrates at least one of which is transparent, a liquid crystal composition layer sandwiched between the substrates, and a plurality of scanning lines and images arranged in a matrix on the facing surface of one of the substrates In a liquid crystal display device including a signal wiring, a pixel electrode, and an active element, the following process is used as a process for forming the scanning line.
i) A titanium oxide film, a zinc oxide film, or a composite oxide film of titanium oxide and zinc oxide is formed on the substrate.
ii) Palladium ions, silver ions or ruthenium ions are adsorbed thereon.
iii) Irradiate ultraviolet rays using a photomask for scanning lines.
iv) Wash away the metal ions in the area not irradiated with ultraviolet rays.
v) Growing copper, silver or ruthenium using electroless plating with the metal reduced to the shape of the scanning line as a scaffold.
After forming the scanning line using the above manufacturing method, when the gate insulating film and the semiconductor layer of the active element are deposited on the substrate, the protective active element for static electricity countermeasures formed around the effective pixel area and the effective pixel area It is partially deposited only in a local region of the substrate containing.
Next, after forming a metal electrode layer for forming the video signal wiring and the pixel electrode, the photomask transmitted light amount of the channel portion of the thin film transistor element connecting the video signal wiring and the pixel electrode is modulated, and after developing the photoresist, the thin film transistor element By using a manufacturing method in which the thickness of the photoresist in the channel portion is reduced, the video signal wiring, the pixel electrode, and the thin film semiconductor element are simultaneously separated in one photolithography process. Including this process and the photomask process for forming the scanning lines, the entire process is completed in two photomask processes. The photoresist process is performed only once when the thin film semiconductor element isolation, the video signal wiring and the pixel electrode are formed. A method of manufacturing a horizontal electric field mode liquid crystal display device, characterized in that it is not used. A pair of substrates at least one of which is transparent, a liquid crystal composition layer sandwiched between the substrates, a plurality of scanning lines and video signals arranged in a matrix on the facing surface of one of the substrates In a liquid crystal display device including wiring, pixel electrodes, and active elements, the following steps are used as a process for forming the scanning lines.
i) Palladium ions and silver ions are adsorbed onto the substrate in a scanning line pattern using a printing method.
ii) Palladium ions and silver ions are reduced by H ₂ plasma treatment to return to metallic palladium and metallic silver.
iii) Growing copper, silver, or ruthenium using electroless plating with the metal reduced to the shape of the scanning line as a scaffold.
After forming the scanning line using the above manufacturing method, when the gate insulating film and the semiconductor layer of the active element are deposited on the substrate, the protective active element for static electricity countermeasures formed around the effective pixel area and the effective pixel area It is partially deposited only in a local region of the substrate containing.
Next, after forming a metal electrode layer for forming the video signal wiring and the pixel electrode, the photomask transmitted light amount of the channel portion of the thin film transistor element connecting the video signal wiring and the pixel electrode is modulated, and after developing the photoresist, the thin film transistor By using a manufacturing method in which the thickness of the photoresist in the channel portion of the element is reduced, the video signal wiring, the pixel electrode, and the thin film semiconductor element are simultaneously separated in one photolithography process. By using the above process, the photoresist process is used only once when the thin film semiconductor element isolation, the video signal wiring, and the pixel electrode are formed. A lateral electric field type liquid crystal display device manufactured by using the manufacturing method of claim 1. A lateral electric field type liquid crystal display device produced by using the manufacturing method of claim 2.

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