JP4279388B2 - Optical semiconductor device and method for forming the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an optical semiconductor device for surface mounting used as SMD (Surface Mount Device), such as illumination in a switch, various light sources and optical sensors of a dot matrix display, and can be particularly downsized and highly reliable. The present invention relates to an optical semiconductor device and a method for forming the same.
[0002]
[Prior art]
Today, light emitting elements and light receiving elements are variously used as various light sources and sensors such as in-switch illumination and dot matrix displays. A surface mount optical semiconductor device used as a SMD (Surface Mount Device) or the like that can be mounted on a circuit board more compactly as the application field expands is being developed. The optical semiconductor device can be formed extremely small, and the handling efficiency can be improved by a package for protecting the optical semiconductor element disposed inside.
[0003]
An example of such an optical semiconductor device is disclosed in JP-A-8-125227. As a specific example of the optical semiconductor device, a chip component type light emitting diode for comparison with the present invention is shown in FIG. The surface-mounted light emitting diode 600 shown in FIG. 6 uses a package in which a thin metal plate 604 is provided on a resin substrate 601 having a through hole 602. A pair of wiring patterns 605 and 606 are formed from the front surface to the side surface and back surface of the package. One wiring pattern 606 is a thin metal plate extending along the side wall in the through hole. On the thin metal plate, an Ag paste 607 is used to fix the LED chip, and electrical connection is established with one electrode of the LED chip 603. The other wiring pattern 605 is electrically connected to the other electrode of the LED chip 603 and the metal thin wire 608 on the outer upper surface of the through hole provided in the package. A surface-mounted light emitting diode 600 is formed by providing a transparent resin 609 on the LED chip.
[0004]
Since the surface-mounted light-emitting diode formed in this way has the LED chip 603 disposed in the recess using the through-hole 602 and the metal thin plate 604, the overall thickness can be extremely reduced. Therefore, a surface-mounted light-emitting diode that can be miniaturized with high mass productivity can be formed.
[0005]
[Problems to be solved by the invention]
However, as it is used in a more severe environment that is required along with the spread of the use environment, it is difficult to obtain sufficient reliability in the surface mount type light emitting diode having the above configuration, and further improvement has been demanded. In view of the above problems, an object of the present invention is to provide an optical semiconductor device that is highly reliable and can be thinned.
[0006]
[Means for Solving the Problems]
The present invention provides a die bond by a thin plate provided on one surface side of an insulating flat plate in which a through hole is formed and thinner than the insulating flat plate, and a die bonding member having at least a resin on a thin plate on the bottom surface of the cavity using the through hole. An optical semiconductor device, a lead electrode for electrically connecting the optical semiconductor element provided on the insulating flat plate to the outside, and a translucent resin that covers the optical semiconductor element in the cavity. is there. In particular, it is an optical semiconductor device in which the thin plate is a metal and the surface thereof is at least a resin or a porous material. As a result, the optical semiconductor device can be miniaturized with high productivity and the reliability can be remarkably improved.
[0007]
In the optical semiconductor device according to claim 2 of the present invention, the porous material is ceramic. Thereby, not only the heat dissipation from the optical semiconductor element can be improved, but also the mechanical strength can be improved. Furthermore, the light utilization efficiency can be improved.
[0008]
In an optical semiconductor device according to a third aspect of the present invention, the metal constituting the thin plate is sealed with resin and is electrically independent of the lead electrode. When an insulating flat plate and a thin film are attached with an adhesive such as an adhesive sheet, solder or the like may enter from the interface of the adhesive sheet when mounting the solder or the like of the optical semiconductor device. Similarly, moisture may enter. The present invention prevents such moisture and solder from entering, and even if a conductive member is used for the thin plate, it is electrically independent from the lead electrode, so the lead electrodes are short-circuited via the thin plate. This can be greatly reduced. Further, the resin on the thin plate has the effect of preventing the short circuit between the electrodes in the case of soldering the optical semiconductor device, etc., in addition to improving the insulating property, and improving the solderability.
[0009]
According to a fourth aspect of the present invention, there is provided a method for forming an optical semiconductor device comprising: a step of forming a through hole in an insulating flat plate; a step of attaching an insulating flat plate and a metal via an adhesive sheet; A step of forming at least a pair of lead electrodes thereon, a step of die-bonding an optical semiconductor element on an adhesive sheet on the bottom surface of the cavity using a through-hole, with a die-bonding member having at least a resin, and an insulating property between each electrode of the optical semiconductor element A step of electrically connecting each of the lead electrodes formed on the flat plate with a conductive material; and a step of covering at least the optical semiconductor element with a translucent resin. Accordingly, an optical semiconductor device that can be miniaturized and has high reliability by a relatively simple process can be formed with high productivity.
[0010]
According to a fifth aspect of the present invention, there is provided a method for forming an optical semiconductor device, comprising: forming a through hole in an insulating flat plate having an adhesive sheet; and facing the insulating flat plate and at least the insulating flat plate through the adhesive sheet. A step of attaching a metal layer having a ceramic on the surface; a step of forming at least a pair of lead electrodes on an insulating flat plate; and a die bond having an optical semiconductor element on the ceramic at the bottom of the cavity using a through hole. A step of die bonding by a member, a step of electrically connecting each electrode of the optical semiconductor element and a lead electrode formed on an insulating flat plate with a conductive material, and at least covering the optical semiconductor element with a translucent resin The process of carrying out. As described above, an optical semiconductor device that can be miniaturized and has high reliability can be formed with high productivity by a relatively simple process.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
As a result of various experiments, the present inventors have found that by adding a thin plate having a specific surface to an insulating flat plate having a through hole, it is possible to improve the miniaturization and reliability. It came to an eggplant.
[0012]
Although the effect of improving the reliability by the configuration of the present invention is not certain, it is considered that the surface shape of the thin plate attached to the insulating flat plate having the through hole greatly affects. That is, by using an insulating flat plate and a thin plate having through holes, it is possible to reduce the size with high productivity. In particular, if the thin plate constituting the bottom surface of the concave portion of the cavity is made thinner than the insulating flat plate, heat from the optical semiconductor element is easily released to the outside, and characteristics such as driving stability and reliability can be improved. On the other hand, the influence that various heats, such as when soldering the optical semiconductor device is connected or from the external environment, is directly applied to the inside of the optical semiconductor element or the through hole through the thin plate is also increased.
[0013]
Such heat is considered to peel the optical semiconductor element from the thin plate or the like due to a difference in thermal expansion coefficient between the translucent resin that coats the optical semiconductor element and the side wall of the through-hole or the thin plate or expansion of moisture mixed in the formation. . In particular, when a thin metal plate is used, not only the adhesiveness with the resin coating the optical semiconductor element is relatively low, but also the thermal conductivity is high and the coefficient of thermal expansion is significantly different from that of the resin. it is conceivable that. The peeling between the optical semiconductor element and the thin plate not only changes the optical characteristics, but also causes disconnection of a fine metal wire that is a conductive member in the vicinity of the electrode. In some cases, there arises a disadvantage that electrical conduction between the optical semiconductor element and the outside cannot be established.
[0014]
As shown in the perspective view of FIG. 1, the present invention includes a thin plate 111 provided on one surface side of an insulating flat plate 101 in which a through hole is formed and thinner than the insulating flat plate, and a thin plate on the bottom surface of the cavity using the through hole. An optical semiconductor element 103 die-bonded by a die-bonding member having at least a resin, a lead electrode 105 electrically connecting the optical semiconductor element 103 provided on the insulating flat plate and the outside, and an optical semiconductor element in the cavity This is an optical semiconductor device having a translucent resin 109 to be coated. In particular, the surface of the thin plate 111 constituting the bottom surface of the cavity is at least a resin 112. As a result, while maintaining miniaturization and mass productivity, the use of a thin plate with improved adhesion to a translucent resin that coats an optical semiconductor element, a die-bonding member that mounts the optical semiconductor element, etc. makes it more reliable. It can improve the performance. Hereinafter, although the Example of this invention is explained in full detail, it cannot be overemphasized that it is not restricted only to this.
[0015]
【Example】
(Embodiment 1) An embodiment of the present invention will be described below with reference to the drawings. 2 and 3 show an embodiment of the present invention, and the manufacturing process will be described with reference to FIG. Glass epoxy on which a copper foil constituting a part of the lead electrode is suitably formed in advance is used as the insulating flat plate 101 (step of FIG. 3A).
[0016]
A through-hole constituting a cavity in which the LED chip 103 as an optical semiconductor element is disposed later is formed in the insulating flat plate 101. The insulating flat plate 101 is preferably one that can protect the optical semiconductor element 103 such as an LED chip from the outside and can be thinned. Specifically, various types such as glass epoxy, liquid crystal polymer, acrylic resin, epoxy resin, and ceramic can be used. Can be used. The through hole provided in the insulating flat plate 101 may be large enough to arrange an optical semiconductor element therein. When an RGB (red, green, blue) LED chip is arranged as the optical semiconductor element, YB (yellow) , Blue) LED chip or when a plurality of light emitting elements and light receiving elements are arranged together, the sizes may be set to each other. Therefore, a plurality of through holes formed in the insulating flat plate can be provided at various positions on the insulating flat plate in accordance with the size, shape and number of the optical semiconductor elements.
[0017]
Similarly, since the thickness of the insulating flat plate 101 forms the depth of the cavity by using the through holes, those having various thicknesses can be used as desired. In particular, when a light-emitting element having a double heterostructure as an active layer made of a nitride semiconductor is used as an optical semiconductor element, a large amount of light is emitted from the end face direction of the active layer, so that a through-hole serving as a sidewall of the cavity It is preferable to use a highly reflective material. Thus, an optical semiconductor device with high light utilization efficiency can be obtained simply by forming a through hole. Specifically, light is effectively used by exposing the white material surface of the insulating resin plate without forming Au plating or the like that absorbs light on the short wavelength side of the visible light on the cavity side wall. be able to.
[0018]
The through-holes constituting the cavity can be formed extremely shallow because the through-holes can be formed relatively easily and with good controllability even if the insulating flat plate is thin. Specifically, the thickness can be about 200 μm or less. Such a through hole can be formed by etching an insulating flat plate, or can be mechanically formed using a drill. Furthermore, the through holes can be formed using various lasers such as a gas laser using carbon dioxide gas and a solid laser using YAG. The shape of the through hole can be adjusted as desired, such as a mortar shape or a cylindrical shape, by selecting the etching solution, adjusting the shape of the cutting edge of the drill, and condensing the laser beam. Similarly, the shape of the through-hole as viewed from the front is not limited to a circle, but various shapes such as an ellipse, square, rectangle, borderless rectangle, and a shape in which a plurality of circles are continuously penetrated can be selected. can do.
[0019]
Next, a metal layer 111 is bonded to an insulating flat plate having a through hole in the approximate center as a thin plate through an adhesive sheet 112 made of an epoxy resin having a thickness of about 60 μm, thereby forming a cavity 102 using the through hole. By making the thin plate 111 thinner than the insulating flat plate 101, the entire thickness of the optical semiconductor device 100 can be reduced and the heat dissipation can be improved. The insulating flat plate 101 is easily limited in thickness for protecting the optical semiconductor element 103 or improving the light utilization efficiency, whereas the thin plate 111 only needs to support the optical semiconductor element 103. is there.
[0020]
The thin plate 111 having a thickness of about 30 to 170 μm can be preferably used. The thin plate 111 of the present invention fixes the optical semiconductor element through a die bond resin. Alternatively, the surface may be in contact with a mold member 109 that is a light-transmitting resin and has excellent adhesion to the die bond resin 107 and the resin mold member 109. As a specific surface of the thin plate, a resin surface 112 having excellent adhesion that can be chemically or mechanically bonded to a die bond resin or the like, ceramic having a porous surface, or the like can be used. In the case of a thin plate using an extremely thin adhesive resin sheet or the like, it is difficult to obtain mechanical strength, so that a metal or ceramic can be added as a reinforcing member. When a metal is used for reinforcement, it is preferable that an insulating coating is made using a resin such as resist ink in order to prevent a short circuit with each electrode of the optical semiconductor device.
[0021]
In addition, if the adhesive sheet 112 uses a white material having a high reflectance and the optical semiconductor element 103 uses a nitride semiconductor light emitting element, the light utilization efficiency can be further increased. Similarly, at least a light-emitting layer is a nitride semiconductor having a double hetero structure on an insulating substrate in a cavity 102 which is a resin insulating flat plate 101 and exposed with a white material surface serving as a side wall, and a pair of electrodes are provided on the same surface side. The light utilization efficiency can be further increased by arranging the optical semiconductor element 103 having the optical semiconductor element 103. Further, by making the composition and the solvent of the adhesive sheet 112 the same as or close to the composition of the die bond resin 107 that adheres the optical semiconductor element 103, a stronger adhesive strength can be obtained.
[0022]
Next, the copper plate used as the thin plate 111 was etched leaving the site | part where a cavity bottom face is fixed to an insulating flat plate (B process of FIG. 3).
[0023]
Further, the copper plate, which is the exposed thin plate 111, is preferably sealed with a resin 113 in order to increase the adhesion strength of the copper plate and ensure insulation. Subsequently, external lead electrodes 105 and 106 of the optical semiconductor device are formed. External lead electrodes 105 and 106 are compared with extremely thin lead electrodes by forming plating layers on the light emitting or incident side upper surface, the lower surface and the side opposite to the upper surface of the insulating flat plate 101 using electrolytic and electroless plating methods. Can be formed easily. Furthermore, it is possible to reinforce the plating layers on the light emitting side upper surface and the lower surface of the insulating flat plate by using a photographic method. In this manner, a package in which the cavity 102 in which the optical semiconductor element is disposed and the lead electrodes 105 and 106 are formed can be formed (step in FIG. 3C).
[0024]
The metal plate, which is a thin plate reinforcing member constituting the cavity, and the lead electrodes 105 and 106 are electrically independent. Further, the end portion is sealed with the resin 113 and the insulating property is enhanced. Although it has been disclosed here that the thin plate is sealed with resin after the lead electrode is formed, it goes without saying that the thin plate can be sealed with resin after sealing.
[0025]
Subsequently, an LED chip 103 having at least a light-emitting layer of a gallium nitride compound semiconductor is attached to a die-bonding device by using a translucent epoxy adhesive as a die-bonding resin 107 on the adhesive sheet 112 on the bottom surface of the cavity 102 formed using the through hole. Use die bonding. The LED chip 103 disposed in the cavity 102 and the lead electrodes 105 and 106 on the light emitting side formed on the package are wire-bonded using Au having a diameter of about 30 μm (step 3D in FIG. 3).
[0026]
The connection between the LED chip 103 and the lead electrodes 105 and 106 formed on the package is electrically connected using a conductive wire 108 of 20 to 40 μm in consideration of downsizing, connection strength, mass productivity, and the like. be able to. The material of the conductive wire can be appropriately selected according to various characteristics such as gold and aluminum.
[0027]
Similarly, as long as the connection between the optical semiconductor element and the lead electrode is ensured, the electrode of the optical semiconductor element is covered with an insulating protective film such as silicon oxide so that the electrodes of the optical semiconductor element are not short-circuited unless the adhesion with the thin film is impaired. After covering the semiconductor element portion to be removed, a conductive resin or solder containing a conductive filler such as silver, carbon, or ITO can also be used as a die bond member / conductive member (not shown). The die bond resin can be mixed with metals such as gold, silver and copper, metal oxides such as ITO and tin oxide, and carbon with excellent conductivity as desired. In order to improve the property, an inorganic substance such as glass can be mixed. Accordingly, the present invention can be applied to an optical semiconductor element having a pair of electrodes via a semiconductor layer.
[0028]
In the present invention, as the optical semiconductor element 103, light emitting elements and light receiving elements using various semiconductors can be used. As a specific light-emitting element, a sapphire, spinel, SiC, or GaN substrate laminated with a nitride semiconductor can be suitably used. Nitride semiconductors can emit various electromagnetic waves from the ultraviolet region to the visible region due to their band gaps. In particular, when a nitride semiconductor is formed on a sapphire substrate, a light emitting element having both crystallinity and mass productivity can be obtained. In addition, an LED chip having a gallium nitride compound semiconductor on a sapphire substrate and having a pair of electrodes formed on the same plane side has a thinness of about 150 μm or less, such as polishing the sapphire substrate because both the sapphire substrate and gallium nitride have high hardness. Can be. More specifically, when an LED chip having an overall height of 70 to 90 μm is used, the height of the optical semiconductor device can be reduced to about 0.3 mm or less.
[0029]
Since such an optical semiconductor element 103 forms a pair of electrodes on an insulating substrate, it is possible to reduce the size and improve the light utilization efficiency, and the effect of the present invention is particularly great. As another semiconductor element, a light-emitting element having a light-emitting layer of indium, aluminum, gallium, and phosphorus on a gallium phosphide or gallium arsenide substrate can be used. Similarly, a light receiving element having a light receiving layer made of silicon in which impurities are doped at a high concentration on a silicon substrate can be provided.
[0030]
Finally, the LED chip 103 is disposed in the cavity 102, and the surface of the package in which each electrode of the LED chip and the lead electrodes 105 and 106 of the package are connected by the gold wire 108 is partially used as a molding member 109 to form a translucent epoxy. It seals by injection molding with resin (process 3E).
[0031]
The mold member is suitably provided to protect the LED chip, the conductive wire, and the like from the external environment and external force, and various types such as an epoxy resin, a silicone resin, a urea resin, and a low melting point glass can be used. . The mold member may have a convex lens shape or a concave lens shape in order to collect or diffuse light incident on the optical semiconductor element or light emitted from the optical semiconductor element. Also, the convex lens can be variously selected such as a simple convex lens or an elliptical lens shape in accordance with the desired directivity. The mold member can contain various colorants for the purpose of cutting unnecessary wavelengths and diffusing materials such as titanium oxide and silicon oxide for the purpose of obtaining diffused light.
[0032]
Light that can emit white light by containing a phosphor such as a perylene derivative that converts at least a portion of the electromagnetic wave emitted from the light emitting element into another wavelength or a cerium-activated yttrium / aluminum / garnet oxide. A semiconductor device can also be provided. In this way, an extremely small optical semiconductor device having a rectangular shape with sides of about 1.2 mm and about 1.8 mm and a thickness of about 0.3 mm can be formed relatively easily.
[0033]
(Example 2)
Next, the optical semiconductor device having the structure shown in FIG. 4 will be described in detail. A thin plate 411 was added using the same insulating flat plate 401 as in Example 1, and the lead electrodes 405 and 406 were plated to form a package. Unlike Example 1, an adhesive sheet made of an epoxy resin was bonded to an insulating flat plate to form an adhesive layer (step of FIG. 5A), and then a through hole was formed with the adhesive layer.
[0034]
A thin film 411 obtained by pre-depositing a ceramic 414 on a copper foil is added to the surface of the insulating flat plate 401 on which the through hole forming the cavity 402 is formed, in order to use it as the bottom surface of the cavity. (FIG. 5B process). After attaching the thin plate, the copper foil is etched leaving the cavity bottom and sealed with an insulating resin 413 to be electrically independent of the lead electrodes 405 and 406 (step C in FIG. 5). In addition, it can also be attached to an insulating flat plate with the thin film which stuck the adhesive sheet which cut out the site | part used as the bottom face of a cavity.
[0035]
Specifically, the ceramic composite metal layer 20 having a total surface thickness of about 50 μm and a white surface and a porous surface is obtained by depositing ceramic on a Cu plate having a thickness of about 35 μm. Except for this, the optical semiconductor element 403 was die-bonded with an epoxy resin as the mount member 407 in the same manner as in Example 1 and electrically connected (step D in FIG. 5). A mold member 409 was formed thereon, and an optical semiconductor device 400 was formed (step E in FIG. 5). The optical semiconductor device formed in Example 2 is superior in heat dissipation compared to Example 1, but is also susceptible to heat from the outside. However, the thermal shock test of the formed optical semiconductor device was almost the same as Example 1.
[0036]
In the specific embodiments of the present invention, one optical semiconductor device is described, but a plurality of through holes are formed in the form of a dot matrix in an insulating flat plate in order to form with high productivity. After the insulating flat plate and the metal are attached to the entire insulating flat plate through an adhesive sheet so as to correspond to each through hole, the optical semiconductor device is formed through the above-described steps. A plurality of optical semiconductor devices can be mass-produced by separating the formed optical semiconductor devices individually. In addition, a dot-matrix optical semiconductor device can be formed if it is not separated individually.
[0037]
(Comparative Example 1)
An optical semiconductor device was formed in the same manner as in Example 1 except that the thin plate was a copper plate having a thickness of about 50 μm and the LED was directly die-bonded on the copper plate with an epoxy resin. Using 1400 optical semiconductor devices of Example 1 and Comparative Example 1 thus formed, thermal shock tests were performed under conditions of 500 cycles at −20 ° C. for 30 minutes and 80 ° C. for 30 minutes, respectively. After the test, the number of light emitting diodes that were unlit in Example 1 was less than 30% of the light emitting diode in Comparative Example 1. When the light emitting diode of Comparative Example 1 which was turned off was examined, the copper plate and the die-bonding member that became a thin film were peeled off, and the wire was also broken.
[0038]
【The invention's effect】
According to the present invention, an optical semiconductor device can be reduced in size and reliability can be remarkably improved by making the surface state of a thin plate of an optical semiconductor device that can be reduced in size a specific surface. The method of the present invention can form the above-described optical semiconductor device with high productivity.
[Brief description of the drawings]
FIG. 1 is a schematic perspective view of an optical semiconductor device of the present invention.
FIG. 2 is a schematic cross-sectional view of an optical semiconductor device of the present invention.
FIG. 3 is a process diagram for explaining a method of forming the optical semiconductor device shown in FIG. 1;
FIG. 4 is a schematic cross-sectional view of another optical semiconductor device of the present invention.
5 is a process diagram for explaining a method of forming the optical semiconductor device shown in FIG. 3; FIG.
FIG. 6 is a schematic cross-sectional view of an optical semiconductor device shown for comparison with the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 100 ... Optical semiconductor device 101 ... Insulating flat plate 102 ... Cavity 103 ... Optical semiconductor element 105,106 ... Lead electrode 107 ... Mount member 108 ... Wire 109 ... Mold member 111 ... Thin plate 112 ... Adhesive sheet 113 ... Resin 400 covering at least the end of the thin plate ... Optical semiconductor device 401 ... Insulating flat plate 402 ... Cavity 403 ... Optical semiconductor element 405, 406 ... Lead electrode 407 ... Mount member 409 ... Mold member 411 ... Thin plate 412 ... Adhesive layer 413 ... Insulating resin 414 ... Thin plate surface on the side where the optical semiconductor element is arranged 601 ... resin substrate 602 ... through hole 603 ... LED chip 604 ... metal thin plates 605, 606 ... wiring pattern The emission lead electrodes 607 ... Ag paste 608 ... wire become fine metal wires 609 ... sealing member to become transparent resin

Claims (5)

Light that is die-bonded by a die-bonding member having at least a resin on a thin plate that is provided on one surface side of an insulating flat plate in which a through hole is formed and is thinner than the insulating flat plate, and a thin plate on the bottom surface of the cavity using the through-hole. An optical semiconductor device comprising: a semiconductor element; a lead electrode that electrically connects the optical semiconductor element provided on the insulating flat plate to the outside; and a translucent resin that covers the optical semiconductor element in the cavity. The optical semiconductor device is characterized in that the thin plate constituting the bottom surface of the cavity is a metal, and the surface thereof is at least a resin or a porous material. The optical semiconductor device according to claim 1, wherein the porous material is ceramic. The optical semiconductor device according to claim 1 or 2 metal constituting the sheet are sealed independently the so lead electrode electrically sealed by a resin.  In a method of forming an optical semiconductor device in which an optical semiconductor element is disposed, (a) a step of forming a through hole in the insulating flat plate, and (b) an insulating flat plate and a metal are attached via an adhesive sheet. And (c) a step of forming at least a pair of lead electrodes on the insulating flat plate; and (d) a die bond member having at least a resin on the adhesive sheet on the bottom surface of the cavity using the through hole. A step of die-bonding; and (e) a step of electrically connecting each electrode of the optical semiconductor element and a lead electrode formed on the insulating flat plate with a conductive material, respectively; and (f) at least passing through the optical semiconductor element. A method of forming an optical semiconductor device, comprising: a step of coating with a light-sensitive resin.  In a method for forming an optical semiconductor device in which an optical semiconductor element is disposed, (a) a step of forming a through hole in an insulating flat plate having an adhesive sheet; (b) an insulating flat plate through the adhesive sheet; Using at least a pair of lead electrodes on the insulating flat plate; and (d) using the through hole. A step of die-bonding an optical semiconductor element on a ceramic at the bottom of the cavity with a die-bonding member having at least a resin; and (e) each electrode of the optical semiconductor element and a lead electrode formed on the insulating flat plate with a conductive material. A method of forming an optical semiconductor device, comprising: an electrical connection step; and (f) a step of covering at least the optical semiconductor element with a translucent resin. .

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