JP3869778B2 - Deposition equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film forming apparatus for supplying a plurality of types of processing gases into a processing space and forming a film on the surface of an object to be processed using the processing gases.
[0002]
[Prior art]
  Various types of film forming apparatuses of this type are known. As a prior art that seems to be the closest to the present invention, disclosed in “Patent Head Structure and Processing of Processing Apparatus” disclosed in Patent Document 1 below. There is a gas supply method. The figure below8And figure9The above prior art shown in FIG.
[0003]
A processing gas is ejected from a shower head body 61 attached to the processing container 60 in a vacuum state, and the processing gas is sprayed onto the surface of the semiconductor wafer W disposed in the processing container 60, and an insulating oxide film is formed on the surface. In addition, a metal film for wiring is formed. A support column 62 is provided at the bottom of the processing container 60, and a mounting table 63 is coupled thereon. A semiconductor wafer W is placed on the mounting table 63. Further, the mounting table 63 is heated through the transmission window 65 made of quartz glass by the heating lamp 64 disposed below the processing container 60 to maintain the semiconductor wafer W at a predetermined temperature suitable for the processing. .
[0004]
The shower head body 61 is formed by integrating an upper block 66, a middle block 67, and a lower block 68 made of thick plate materials, and each block is provided with a source gas supply path 69 and a reducing gas supply path 70. ing. FIG. 10 shows the state where these supply paths 69 and 70 are branched in the form of an exploded view. The source gas supply path 69 is bifurcated in the upper block 66 to form bifurcated paths 69A and 69A, which are further bifurcated in the middle block 67 to form four branched paths 69B. In the lower block 68, four gas ejection passages 69C are formed for convenience.
[0005]
Similarly, the reducing gas supply path 70 is bifurcated in the upper block 66 to form branch paths 70A and 70A, which are further branched and bent in the middle block 67, respectively, for convenience. Furthermore, in the lower block 68, five gas ejection passages 70C are formed. In the above description, the gas ejection path 69C is described as 4 convenient and the gas ejection path 70C is described as 5 convenient, but these are the numbers in the cross section of FIG. 9 and FIG. When viewed, a large number of gas ejection paths 69 </ b> C and 70 </ b> C are opened over the entire lower surface of the lower block 68.
[0006]
In order to prevent the processing gas from being deposited in the gas ejection path 69 </ b> C of the lower block 68 due to radiant heat from the semiconductor wafer W, a cooling water path 71 is provided in the shower head body 61. The water channel 71 descends from the vicinity of the end portion of the upper block 66, uniformly cools the gas ejection channels 69C and 70C of the lower block 68, and flows out from the upper block 66 on the opposite side. In addition, the heating unit 72 heats the middle block 67 and the upper block 66 that are not easily exposed to radiant heat from the semiconductor wafer W so that the processing gas is not liquefied or thermally decomposed. The exhaust passage 73 is connected to a vacuum pump (not shown), and the inside of the processing container 60 is evacuated during film formation.
[0007]
[Patent Document 1]
JP-A-8-291385
[0008]
[Problems to be solved by the invention]
In the case of the shower head main body 61 as described above, the flow path of the raw material gas and the reducing gas is formed through the blocks 66, 67, 68 in the thickness direction of the upper block 66, the middle block 67, and the lower block 68. ing. At the same time, since the source gas supply path 69 and the reducing gas supply path 70 are complicatedly branched in the upper block 66 and the middle block 67, the flow paths of the respective channels reaching the gas ejection paths 69C and 70C of the lower block 68 are as follows. The flow path configuration is such that the resistance is difficult to equalize. In particular, if the processing gas that has flowed into the upper block 66 is, for example, the raw material gas supply path 69, there are four locations where the flow path is bent at substantially right angles up to the gas ejection path 69C of the lower block 68. In addition, an increase in flow resistance and pressure loss due to such a large number of bent portions have a great influence on the state of ejection of the processing gas.
[0009]
Therefore, the flow rates of the processing gases ejected from the gas ejection channels 69C and 70C vary, the crystal growth on the surface of the semiconductor wafer W becomes uneven, and the crystal film thickness and other film quality requirements are satisfied. It will not be a thing. Such a problem occurs because the flow path configuration in which each processing gas such as a raw material gas and a reducing gas passes through the blocks 66, 67, and 68 in the thickness direction and branches is overlapped. It is the cause.
[0010]
Each of the upper block 66 and the middle block 67 is provided as a structure for branching the flow path of the processing gas, and finally, a large number of gas ejection paths 69C and 70C are formed in the lower block 68. It has a structure. Therefore, since it is necessary to form a plurality of completely different flow paths for each processing gas in each of the blocks 66, 67, 68, the flow path structure of each block becomes very complicated. It's not a good idea to manage the production of blocks. In addition, since the flow volume of the processing gas in the shower head increases with the complicated and diverse flow path configuration as described above, the residual gas at the time of forming the multilayer film may not be completely removed. This makes it impossible for ALD (Atomic Layer Deposition) to proceed properly.
[0011]
Further, when the blocks 66, 67, and 68 are stacked and integrated, for example, it is very important in terms of assembly accuracy to accurately connect the branch path 70A of the upper block 66 and the branch path 70B of the middle block 67. If this kind of communication is not ensured correctly, the flow area of the processing gas becomes small at this communication location, and an appropriate flow rate cannot be secured, resulting in film formation. It will adversely affect quality. Further, if the branch paths 70A and 70B are deviated at the communication location, a turbulent flow is generated in the flow of the processing gas, and the proper gas supply cannot be performed.
[0012]
Further, the cooling water passage 71 uniformly cools the gas ejection passages 69C and 70C of the lower block 68, and the heating means 72 heats the middle block 67 and the upper block 66 that are not easily radiated from the semiconductor wafer W. Therefore, it is impossible to control at different temperatures suitable for each processing gas for each raw material gas and reducing gas.
[0013]
The present invention has been made in view of such circumstances, and an object thereof is to provide a film forming apparatus in which the state of gas ejection from each nozzle of a gas ejection head is optimized.
[0014]
[Means for Solving the Problems]
  In order to achieve the above object, a film forming apparatus of the present invention has a gas ejection head for supplying a plurality of types of processing gas into a processing space, and forms a film on the surface of an object to be processed with the processing gas. The gas ejection head is provided with a number of nozzles for independently ejecting each processing gas on a head surface facing the object to be processed, and each processing gas is independent of the gas ejection head. Each of the flow path members is provided in correspondence with each processing gas, and each of the flow path members is separated in a direction substantially along the head surface. The process gas is supplied from the flow path of each flow path member to the nozzle corresponding to each process gas.Each of the flow path members is provided with a diffusion chamber that temporarily holds the introduced processing gas, and the volume of the diffusion chamber is set to be sufficiently smaller than the size of the flow path member. Each flow path member is formed with an introduction-side flow path that guides the introduced processing gas to the diffusion chamber and a nozzle-side flow path that extends from the diffusion chamber and supplies the processing gas to each nozzle.It is a summary.
[0015]
That is, in the film forming apparatus of the present invention, the gas ejection head is provided with a number of nozzles for independently ejecting each processing gas on the head surface facing the object to be processed. Each of the flow path members has a flow path into which the process gas is introduced independently, and exists corresponding to each process gas, and the flow path members are separated in a direction substantially along the head surface. The process gas is supplied from the flow path of each flow path member to the nozzle corresponding to each process gas.
[0016]
With the above configuration, one type of processing gas supplied to the flow path of a specific flow path member is branched in the flow path member and directed toward the nozzle for the processing gas. In addition, other types of processing gases supplied to the flow paths of other flow path members are also directed to the nozzles for the processing gases through a similar flow process. In each flow path member having such a laminated structure, each process gas is circulated toward the nozzle, so that the flow structure of the process gas flow path toward the nozzle is simplified. The flow path resistance is also easily uniformed. As a result, the amount of gas ejected from a large number of nozzles is made as uniform as possible, the film formation proceeds stably, and good film formation quality is obtained. In addition, since such stable film formation proceeds, the time required for film formation is shortened, which is effective for improving productivity.
[0017]
  For example, the flow path of each flow path member is extended to a predetermined location in a direction substantially along the head surface, and then turned to a nozzle for the processing gas. Since the processing gas can be ejected from a large number of nozzles based on such a flow path configuration, the gas flow path has one bent portion in this case, which increases the flow resistance and pressure as described above. The problem of loss can be avoided. In addition, since the flow path members are stacked in a state substantially along the head surface, the flow path of the processing gas can be sufficiently ensured over the entire area of the flow path member using the thickness of the flow path member. This makes it easier to direct the processing gas to a large number of nozzles for each processing gas.
  Each of the flow path members is provided with a diffusion chamber that temporarily holds the introduced processing gas, and the volume of the diffusion chamber is set to be sufficiently smaller than the size of the flow path member. Since the volume of the diffusion chamber is set to be sufficiently smaller than the size of the flow path member, there is no need to increase the dimensions of the flow path member for the arrangement of the diffusion chamber, and the gas ejection head Can be configured compactly. Further, by reducing the volume of the diffusion chamber, the processing gas is temporarily held at a certain high pressure in the diffusion chamber with a small volume and is supplied to each nozzle from that state. It can be kept high and the processing gas can be blown out without a shortage.
  And since the volume of the diffusion chamber is reduced, the volume required for the flow of the processing gas in each flow path member is remarkably reduced. Therefore, when the multilayer film is formed by changing the type of the processing gas, the residual gas is reduced and the type of the processing gas is quickly changed. For example, from the first film formation to the second film formation. The sharpness at the time of so-called multilayer film formation can be obtained well. Such an effect becomes even more remarkable with simplification of the flow path as described later.
  Furthermore, since the flow path is composed of an introduction side flow path that guides the introduced processing gas to the diffusion chamber, and a nozzle side flow path that extends from the diffusion chamber and supplies the processing gas to each nozzle, The processing gas from the side flow path is temporarily held in the diffusion chamber, and is supplied to the plurality of jetting parts through the nozzle side flow path extending from the diffusion chamber, so that a good processing gas is jetted. And since the nozzle side flow path extends from the diffusion chamber toward a large number of nozzles, the diffusion chamber is arranged at the branch of the nozzle side flow path, and the flow resistance and pressure loss are small as described above. A flow path configuration is obtained.
[0018]
In the film forming apparatus of the present invention, when a plurality of processing gas ejection portions provided with nozzles for ejecting a plurality of different types of processing gas in the vicinity thereof are arranged on the head surface at a predetermined interval. The flow path of the processing gas obtained by the flow path configuration in each flow path member laminated as described above opens to the head surface in the state of the nozzle to form the ejection section, and the ejection section is predetermined. Since a plurality of nozzles are arranged at intervals, the amount of the processing gas ejected from each ejection portion can be made as uniform as possible with respect to the object to be processed, which is the best for good film formation. A processing gas atmosphere can be obtained. In addition, in the case where a slight difference occurs in the amount of the processing gas ejected from the plurality of ejecting portions, the processing gas ejection state to the object to be processed is increased by increasing the arrangement density of the ejecting portions with a small amount of ejecting. Can be optimized.
[0019]
In the film forming apparatus of the present invention, the ejection section has a multiple structure in which nozzle openings and / or nozzle tubes are arranged so as to independently eject a plurality of different processing gases, and the nozzle tube is a head surface. When the gas pipe is connected to the flow path member so as to communicate with the flow path of the flow path member into which the processing gas to be ejected by the nozzle tube is introduced, the concentrically arranged above Since the nozzle opening and / or the nozzle tube are respectively connected to the flow path of the flow path member that introduces a plurality of different processing gases, different processing gases are ejected concentrically in an annular layer. Such ejection is performed in the vicinity of the head surface. Therefore, various processing gases are well mixed or reacted for film formation at or near the nozzle opening and / or the portion ejected from the nozzle tube. Furthermore, the nozzle tube is connected to the flow channel of the flow channel member, so that when the flow channel members are stacked and assembled, the nozzle tube functions like a knock pin for positioning, and the assembly work is simplified. In addition, the assembly accuracy is improved.
[0020]
In the film forming apparatus of the present invention, when the nozzle tube is connected to a flow path member arranged on the side farther from the object to be processed as the nozzle tube located inside the multiple structure, the nozzle tube located inside Since the pipe is connected to the flow path member disposed on the side far from the object to be processed, the processing gas from the flow path member on the far side can be ejected as an independent flow path by the nozzle pipe. Similarly, since the outer nozzle tube of the inner nozzle tube is connected to the flow channel member closer to the object to be processed than the flow channel member, different processing gases are supplied to the outer nozzle tube. Can be ejected as an independent channel. In other words, since different process gases are individually introduced into the laminated flow path members, each of the process gases can be ejected from the concentric nozzle tubes in an independent flow path form. .
[0021]
In the film forming apparatus of the present invention, in the gas ejection head, at least the flow path member located on the processing object side among the flow path members and the flow path member positioned on the opposite side of the processing object are independent of each other. When the temperature is controlled, the flow path member (head surface) located on the object to be processed is appropriately cooled against the radiant heat from the object to be processed. It is possible to prevent the film from being decomposed in the portion, that is, the nozzle opening and / or the nozzle tube or in the vicinity thereof, or the film formation phenomenon. In addition, when the flow path member is heated by the radiant heat from the object to be processed, the flow path member is heated, so that when the gas having a low dew point and easily condensing is used as the process gas, It is possible to prevent the processing gas from condensing inside, and to prevent film formation defects due to insufficient ejection of the processing gas.
In addition, in the flow path member located on the opposite side to the object to be processed, the flow path member that is difficult to receive radiant heat from the object to be processed is subjected to appropriate temperature control, and therefore a processing gas having a low dew point was used. Occasionally, condensation can be prevented and normal processing gas can be supplied. As described above, the temperature of the flow path member located on the side of the object to be processed and the flow path member located on the side opposite to the object to be processed are controlled independently of each other to correspond to each flow path member. The most suitable temperature control can be performed for the processed gas, and the properties of the injected processing gas are optimum for film formation.
[0022]
In the film forming apparatus of the present invention, in the gas ejection head, when the temperature of each flow path member is controlled independently, the temperature control adapted to the processing gas corresponding to each flow path member However, since it is performed for each flow path member, the temperature control state of the entire gas ejection head can be optimized for the properties of the processing gas and the like.
[0026]
In the film forming apparatus of the present invention, the diffusion chamber is provided in the vicinity of a substantially central portion of each flow path member so that the processing gas is supplied to each nozzle through a nozzle-side flow path extending radially from the diffusion chamber. In this case, since the length of the nozzle side flow path from the diffusion chamber located at the substantially central portion of each flow path member to each nozzle can be made as uniform as possible, the flow resistance of the processing gas can be further increased. It is possible to reduce the variation in the injection amount from each nozzle.
[0027]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described in detail.
[0028]
FIG. 1 shows an embodiment of a film forming apparatus of the present invention. In this apparatus, a separation plate 3 is provided in a processing container 2 whose inside is a processing space 1, and a wafer 5 (for example, a semiconductor wafer) that is an object to be processed in a state of being aligned with an opening 4 opened in the separation plate 3. ) Is placed. A heater H is disposed above the back surface of the wafer 5. A vacuum pump (not shown) for evacuating the processing space 1 is arranged, and air in the processing space 1 is sucked from the exhaust port 6.
[0029]
In order to supply a processing gas to the wafer 5, a gas ejection head 7 is disposed in the processing space 1. A CVD (Chemical Vapor Deposition) process is performed on the surface of the wafer 5 by the processing gas ejected from the gas ejection head 7 to form an insulating oxide film, a wiring metal film, and the like. The illustrated gas ejection head 7 is of a type that ejects three types of processing gases A, B, and C, and a plurality of ejection portions 9 are arranged on a head surface 8 facing the wafer 5. As shown in FIG. 3, the plurality of ejection portions 9 are arranged on the head surface 8 at a predetermined interval.
[0030]
The flow path members 10A, 11B, and 12C made of a thick plate-like material for each of the processing gases A, B, and C have a laminated structure, and the flow path members 10A, 11B, and 12C extend along the head surface 8. Arranged in a state. Diffusion chambers 13A, 14B, and 15C are arranged at the center of each flow path member 10A, 11B, and 12C, and each diffusion chamber has an introduction side flow path 16A, 17B, and 18C from a processing gas supply source (not shown). The flow paths are arranged inside the flow path members 10A, 11B, and 12C so that the processing gases A, B, and C are guided through the above. Accordingly, the flow path members 10A, 11B, and 12C are provided for the processing gases A, B, and C, and accordingly, the diffusion chambers 13A, 14B, and 15C, the introduction-side passages 16A, 17B, and 18C, and the nozzle-side flow path 19A. , 20B, 21C are provided exclusively for the processing gases A, B, C. In addition, nozzle side channels 19A, 20B, and 21C extend radially from the respective diffusion chambers 13A, 14B, and 15C toward the ejection portion 9. The state of the radial arrangement is shown in the processing drawing of the flow path member 10A in FIG.
[0031]
The diffusion chambers 13A, 14B, and 15C are provided in the vicinity of the substantially central portions of the flow path members 10A, 11B, and 12C, and the nozzles are processed through the nozzle-side flow paths 19A, 20B, and 21C that extend radially from the diffusion chamber. Since gas is supplied, the nozzle-side flow paths 19A, 20B, and 21C from the diffusion chambers 13A, 14B, and 15C located at substantially the center of the flow path members 10A, 11B, and 12C to the respective nozzles are provided. The length can be made as uniform as possible, and accordingly, the flow resistance of the processing gas is made more uniform, and variations in the injection amount from each nozzle can be reduced.
[0032]
The ejection portion 9 has a large diameter in which nozzle openings and / or nozzle tubes for independently ejecting different types of different processing gases A, B, and C are arranged concentrically on the small diameter nozzle tube 22 and the outside thereof. The nozzle tube 23 and a nozzle opening 24 disposed outside the nozzle tube 23 are configured. In this way, the nozzle tubes 22 and 23 having a multiple structure are connected to the flow path member 10 </ b> A in which the small-diameter nozzle tube 22 located on the inner side is arranged on the side far from the wafer 5, and located outside the nozzle tube 22. The large-diameter nozzle tube 23 is connected to the flow path member 11B closer to the wafer than the flow path member 10A.
[0033]
By forming the flow path as described above, the processing gas A flows through the nozzle flow path 22 </ b> A in the nozzle tube 22 and is supplied to the ejection portion 9, and the processing gas B is configured by a gap between the nozzle tube 22 and the nozzle tube 23. The process gas C is supplied to the ejection part 9 from the nozzle opening 24 formed outside the nozzle pipe 23 through the nozzle passage 23 </ b> B. Accordingly, since different processing gases are individually introduced into the laminated flow path members 10A, 11B, and 12C, the respective processing gases A, B, and C are concentrically arranged in independent flow path forms. It can be ejected from the nozzle tubes 22 and 23.
[0034]
With the configuration as described above, the plurality of different processing gases A, B, C supplied to the flow paths 16A, 17B, 18C and 19A, 20B, 21C of the flow path members 10A, 11B, 12C Branches within 10A, 11B, 12C are directed towards nozzle tubes 22, 23 and / or nozzle openings 24 for the process gas. In each of the flow path members 10A, 11B, and 12C having the laminated structure as described above, each processing gas A, B, and C is circulated toward the ejection portion 9, so that the processing gases A, B, The routing structure of the channel C is simplified, and accordingly, the channel resistance in each channel is easily uniformed. As a result, the amount of gas ejected from a large number of ejection parts 9 is made as uniform as possible. The film formation proceeds stably, and good film formation quality is obtained.
[0035]
As described above, the processing gases A, B, and C that have flowed into the flow paths 19A, 20B, and 21C of the flow path members 10A, 11B, and 12C are supplied to a predetermined location in a direction substantially along the head surface 8. And then redirected towards the nozzle for the process gas. Since the processing gas can be ejected from a large number of ejection portions 9 on the basis of such a flow channel configuration, the bent portion of the gas flow channel is one in this case, which increases the flow resistance and pressure loss. The problem can be avoided. Further, since the flow path members 10A, 11B, and 12C are laminated in a state of being substantially along the head surface 8, the flow path of the processing gas over the entire area of the flow path member using the thickness of the flow path member. Therefore, it becomes easy to direct the processing gas to the large number of nozzle tubes 22 and 23 and nozzle openings 24 for each processing gas.
[0036]
Since a plurality of the jetting parts 9 are arranged at a predetermined interval, the amount of processing gas jetted from each jetting part 9 can be made as uniform as possible with respect to the wafer 5, and a good composition can be achieved. The best processing gas atmosphere for film formation is obtained. Further, in the case where a slight difference occurs in the processing gas ejection amount of the plurality of ejection portions 9, the processing gas is ejected to the wafer 5 by increasing the arrangement density of the ejection portions 9 having a small ejection amount. The state can be optimized.
[0037]
The nozzle openings 24 and / or the nozzle tubes 22 and 23 arranged concentrically are connected to the flow paths of the flow path members 10A, 11B, and 12C that introduce a plurality of different types of processing gases A, B, and C, respectively. Therefore, different processing gases are ejected in concentric circular layers. Such ejection is performed in the vicinity of the head surface 8. Therefore, the various processing gases A, B, and C are mixed or reacted well for film formation at or near the locations where they are ejected from the nozzle openings 24 and / or the nozzle tubes 22 and 23. Further, since the nozzle pipes 22 and 23 are fitted in the flow paths of the flow path members 10A, 11B and 12C, when the flow path members are stacked and assembled, the nozzle pipes 22 and 23 are positioning knock pins. Thus, the assembling work is simplified and the assembling accuracy is improved.
[0038]
In the gas ejection head 7, the flow path member 12 </ b> C located at least on the wafer 5 side among the flow path members 10 </ b> A, 11 </ b> B, and 12 </ b> C and the flow path member 10 </ b> A located on the opposite side of the wafer 5 are independently provided. The temperature is controlled. Therefore, as shown in FIGS. 1 to 3, the flow path member 12 </ b> C is provided with a cooling pipe 25 that guides cooling water as a temperature control fluid. The cooling pipe 25 is arranged with the surface portion of the flow path member 12C along the head surface 8, and in order to cool the radiant heat from the wafer 5 to the head surface 8 as uniformly as possible, FIG. As shown in FIG. 2, a curved channel is formed over the entire head surface 8.
[0039]
As a result, the flow path member 12C (head surface) located on the wafer 5 side is appropriately cooled against the radiant heat from the heated wafer 5, so that the ejection portion 9, that is, the nozzle opening 24 and / or the nozzle tube is provided. It is possible to prevent the process gases A, B, and C from being decomposed in the vicinity of 22 and 23 or the film formation phenomenon from occurring.
[0040]
In addition, until the flow path member 12C is heated by the radiant heat from the wafer 5, the flow path member 12C can be heated by circulating hot water through the cooling pipe 25. In this way, when a gas having a low dew point and easily condensing at a low temperature is used as the processing gas C, the processing gas is prevented from condensing in the flow path, and film formation failure due to insufficient ejection of the processing gas C. Can be prevented. Moreover, as a temperature control medium distribute | circulated to the cooling pipe 25, appropriate fluids, such as not only water but oil and gas, can be used.
[0041]
Also in the flow path member 10A located on the opposite side of the wafer 5, the heater 26 is disposed near the flow path member 10A in order to perform appropriate temperature control. By doing so, since the flow path member 10A, which is difficult to receive radiant heat from the wafer 5, is subjected to appropriate temperature control, the condensation is prevented when a processing gas having a low dew point in the flow path member 10A is used. A normal process gas can be supplied. As described above, by independently controlling the temperature of the flow path member 12C located on the wafer 5 side and the flow path member 10A located on the opposite side of the wafer 5, the flow path members 12C, The most suitable temperature control can be performed for the processing gases C and A corresponding to 10A, and the properties of the injected processing gas are optimal for film formation.
[0042]
In the gas ejection head 7, in order to control the temperature of each flow path member 10A, 11B, 12C independently of each other, although not shown, a temperature-control flow water pipe is passed through the middle flow path member 11B. be able to. As a result, temperature control adapted to the processing gases A, B, and C corresponding to the flow path members 10A, 11B, and 12C is performed for each flow path member 10A, 11B, and 12C. 7 The temperature control state of the whole can be optimized for the properties of the processing gas. In addition, as a temperature control medium distribute | circulated to the said water flow pipe, appropriate fluids, such as not only water but oil and gas, can be used.
[0043]
Each of the flow path members 10A, 11B, and 12C is provided with diffusion chambers 13A, 14B, and 15C that temporarily hold the introduced processing gases A, B, and C, and the volume of the diffusion chamber is the flow path member 10A. , 11B and 12C are set to be sufficiently smaller than the size. In the flow path members 10A, 11B, and 12C in which the diffusion chambers are arranged from the diffusion chambers 13A, 14B, and 15C, the nozzle-side flow paths 19A, 20B, and 21C for the processing gases A, B, and C toward a large number of nozzles. Therefore, even if the flow path is formed radially, the diffusion chamber is arranged at the branch of the nozzle side flow paths 19A, 20B, and 21C, and the flow path resistance is as described above. And a flow path configuration with less pressure loss. In addition, since the volume of the diffusion chambers 13A, 14B, and 15C is set to be sufficiently smaller than the size of the flow path members 10A, 11B, and 12C, It is not necessary to increase the size, and the gas ejection head 7 can be configured compactly. Further, by reducing the volume of the diffusion chambers 13A, 14B, and 15C, the processing gases A, B, and C are temporarily held at a certain high pressure in the diffusion chamber having a small volume, and are supplied to the nozzle from that state. The supply gas pressure for each flow path can be maintained high, and the processing gas can be ejected without a shortage.
[0044]
Then, by reducing the volume of the diffusion chambers 13A, 14B, and 15C and simplifying the flow paths of the flow path members 10A, 11B, and 12C, the flow of the processing gases A, B, and C in each flow path member For example, the volume required for such as is significantly reduced. Therefore, when the multilayer film is formed by changing the type of the processing gas, the residual gas is reduced and the type of the processing gas is quickly changed. For example, from the first film formation to the second film formation. The sharpness at the time of so-called multilayer film formation can be obtained well.
[0045]
As shown in FIG. 4, the process gas ejection portion 9 is open near the head surface 8, but the state of mixing and reaction of the process gases A, B, and C sprayed onto the wafer 5 is changed. In order to improve further, it is advantageous to make the ejection part 9 protrude from the head surface 8. In FIG. 3B and FIG. 4, the nozzle tubes 22, 27, and 23 having small diameters, medium diameters, and large diameters are arranged in a triple so as to eject three kinds of processing gases. FIG. 4A shows a case where all the nozzle tubes 22, 27, and 23 have the same protruding length. (B) shows a case where the nozzle tubes 22, 27, 23 are cut obliquely and the end faces of the tubes are aligned on one virtual plane. (C) shows a case where the inner nozzle tube is shortened. (D) is a case where the ends of the nozzle tubes 22, 27, 23 are cut obliquely in the form as in (C).
[0046]
  In FIG. 1, FIG. 2, etc., it is a case where the introduction side flow paths 16A, 17B, 18C and the nozzle side flow paths 19A, 20B, 21C, etc., which are flow paths, are formed inside the thickness of each flow path member. However, this can be replaced with the format shown in FIG.
[0047]
  That is, FIG.As shown in FIG. 1, one flow path member may be composed of a plurality of parts. Here, the flow path member 10A is taken as an example, and a recess 31 and a nozzle side flow path 19A constituting a part of the diffusion chamber 13A are formed on the upper plate 30, and a part of the diffusion chamber 13A is formed on the lower plate 32. Are formed, and the upper plate 30 and the lower plate 32 are integrated by an adhesive or welding. Such a structure can also significantly reduce the manufacturing cost by manufacturing the flow path member by, for example, die casting.
[0048]
In addition, the head surface 8 is usually formed in a flat shape, but the boundary surface of adjacent flow channel members is inclined, concave or convex, depending on the shape and dimensions of the internal flow channel of the flow channel member. Or can be made into a shape. By doing so, the shape of the flow path member can be freely selected, and it becomes possible to optimize the flow of the processing gas so as to obtain a better film formation quality.
[0049]
  Figure6These show other embodiment of the gas ejection head in the film-forming apparatus of this invention.
[0050]
In this embodiment, the flow paths branched from the nozzle-side flow paths 19A, 20B, and 21C are opened in the injection unit 9 as nozzle openings 34A, 35B, and 36C. The nozzle openings 34A, 35B, and 36C can be arranged close to each other in the form of an equilateral triangle as shown in FIG. 5B, and 1 as shown in FIG. It is also possible to arrange them close to each other on a straight line. Other than that, it is the same as that of the said embodiment, and the same code | symbol is attached | subjected to the same part.
[0051]
With the above configuration, the ejection portion 9 can be manufactured with a simple structure without using parts such as the nozzle tubes 22, 27, and 23 described above. Other than that, there exists an effect similar to the said embodiment.
[0052]
  Figure7These are explanatory drawings in the case of manufacturing the flow path member 10A by machining. A plurality of diametric holes 38 are formed in a thick circular material plate 37, and these holes 38 form the nozzle-side flow path 19A, and a recess 39 is provided at the center where each hole 38 intersects. A diffusion chamber 13A is configured. The nozzle pipe 22 having the smallest diameter is connected to the hole indicated by reference numeral 40. In addition, the opening end on the outer peripheral side of each hole 38 is sealed with a plug 41.
[0053]
The flow path members 10A, 11B, and 12C having a laminated structure are firmly coupled with bolts penetrating the respective flow path members, or the end portions of the respective flow path members are welded by welding portions indicated by reference numeral 42 in FIG. Alternatively, they can be integrated by bonding with an adhesive or the like.
[0054]
In the above-described embodiment, one diffusion chamber 13A, 14B, and 15C is disposed in each flow path member 10A, 11B, and 12C, but this diffusion chamber is connected to each flow path member or a specific flow path. It is also possible to arrange a plurality of, for example, two members on the member and freely select the distribution of the processing gas.
[0055]
【The invention's effect】
As described above, according to the film forming apparatus of the present invention, one type of processing gas supplied to the flow path of the specific flow path member is branched in the flow path member by the configuration as described above. Directed towards the nozzle for the process gas. In addition, other types of processing gases supplied to the flow paths of other flow path members are also directed to the nozzles for the processing gases through a similar flow process. In each flow path member having such a laminated structure, each process gas is circulated toward the nozzle, so that the flow structure of the process gas flow path toward the nozzle is simplified. The flow path resistance is also easily uniformed. As a result, the amount of gas ejected from a large number of nozzles is made as uniform as possible, the film formation proceeds stably, and good film formation quality is obtained. In addition, since such stable film formation proceeds, the time required for film formation is shortened, which is effective for improving productivity.
[0056]
  For example, the processing gas that has flowed into the flow path of each flow path member is extended to a predetermined location in a direction substantially along the head surface, and then turned toward the nozzle for the processing gas. . Since the processing gas can be ejected from a large number of nozzles on the basis of such a flow path configuration, the gas flow path is bent in one place in this case, and the increase in flow path resistance and pressure as described above are performed. The problem of loss can be avoided. In addition, since the flow path members are stacked in a state substantially along the head surface, the flow path of the processing gas can be sufficiently ensured over the entire area of the flow path member using the thickness of the flow path member. This makes it easy to direct the processing gas to a large number of nozzles for each processing gas.
  Each of the flow path members is provided with a diffusion chamber that temporarily holds the introduced processing gas, and the volume of the diffusion chamber is set to be sufficiently smaller than the size of the flow path member. Since the volume of the diffusion chamber is set to be sufficiently smaller than the size of the flow path member, there is no need to increase the dimensions of the flow path member for the arrangement of the diffusion chamber, and the gas ejection head Can be configured compactly. Further, by reducing the volume of the diffusion chamber, the processing gas is temporarily held at a certain high pressure in the diffusion chamber with a small volume and is supplied to each nozzle from that state. It can be kept high and the processing gas can be blown out without a shortage.
  And since the volume of the diffusion chamber is reduced, the volume required for the flow of the processing gas in each flow path member is remarkably reduced. Therefore, when the multilayer film is formed by changing the type of the processing gas, the residual gas is reduced and the type of the processing gas is quickly changed. For example, from the first film formation to the second film formation. The sharpness at the time of so-called multilayer film formation can be obtained well. Such an effect becomes even more remarkable with simplification of the flow path as described later.
  Furthermore, since the flow path is composed of an introduction side flow path that guides the introduced processing gas to the diffusion chamber, and a nozzle side flow path that extends from the diffusion chamber and supplies the processing gas to each nozzle, The processing gas from the side flow path is temporarily held in the diffusion chamber, and is supplied to the plurality of jetting parts through the nozzle side flow path extending from the diffusion chamber, so that a good processing gas is jetted. And since the nozzle side flow path extends from the diffusion chamber toward a large number of nozzles, the diffusion chamber is arranged at the branch of the nozzle side flow path, and the flow resistance and pressure loss are small as described above. A flow path configuration is obtained.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a film forming apparatus according to an embodiment of the present invention.
FIG. 2 is an enlarged view of the film forming apparatus.
3A is a plan view of a gas ejection head, and FIG. 3B is a plan view showing an opening of a nozzle tube.
FIG. 4 is a cross-sectional view showing a modified example of the nozzle tube.
FIG. 5 is a cross-sectional view showing another modification of the flow path member.
6A is a cross-sectional view of a gas ejection head according to a second embodiment, and FIGS. 6B and 6C are plan views showing the opening positions of nozzle openings.
FIG. 7 is a plan view showing a processed state of the flow path member.
FIG. 8 is a cross-sectional view showing a conventional film forming apparatus.
FIG. 9 is an exploded sectional view showing a block body of the film forming apparatus.
[Explanation of symbols]
1 processing space
2 processing container
3 separator
H Heating heater
4 opening
5 Wafer
6 Exhaust port
7 Gas ejection head
8 Head surface
9 Spouting part
10A Channel member
11B Channel member
12C Channel member
13A Diffusion chamber
14B Diffusion chamber
15C Diffusion chamber
16A Introduction side flow path
17B Introduction side flow path
18C Introduction side flow path
19A Nozzle side flow path
20B Nozzle side flow path
21C Nozzle side flow path
22 Small diameter nozzle tube
22A Nozzle flow path
23 Large diameter nozzle tube
23B Nozzle flow path
24 Nozzle opening
25 Cooling pipeline
26 Heating heater
27 Nozzle tube with medium diameter
30 Upper plate
31 depression
32 Lower plate
33 depression
34A nozzle opening
35B nozzle opening
36C nozzle opening
37 Material board
38 holes
39 depression
40 holes
41 plug
42 Welded part
60 processing container
61 Shower head body
62 prop
63 mounting table
64 Heating lamp
65 Transmission window
66 Upper block
67 Middle block
68 Lower block
69 Raw material gas supply path
69A fork
69B fork
69C Gas outlet
70 Reducing gas supply path
70A branch road
70B fork
70C gas outlet
71 Cooling channel
72 Heating means
73 Exhaust passage
W Semiconductor wafer

Claims (7)

A film forming apparatus having a gas ejection head for supplying a plurality of types of processing gas in a processing space, and forming a film on the surface of an object to be processed with the processing gas,
The gas ejection head is provided with a number of nozzles for independently ejecting each processing gas on the head surface facing the workpiece,
The gas ejection head includes a flow path member that has a flow path into which each processing gas is independently introduced and exists corresponding to each processing gas, and each flow path member is disposed on the head surface. Presents a laminated structure separated in a direction substantially along,
The processing gas is supplied from the flow path of each flow path member to the nozzle corresponding to each processing gas ,
Each flow path member is provided with a diffusion chamber that temporarily holds the introduced processing gas, and the volume of the diffusion chamber is set to be sufficiently smaller than the size of the flow path member,
In each of the channel members, as the channel, an introduction-side channel that introduces the introduced processing gas to the diffusion chamber and a nozzle-side channel that extends from the diffusion chamber and supplies the processing gas to each nozzle are formed. A film forming apparatus characterized by being made .   2. The film forming apparatus according to claim 1, wherein a plurality of processing gas ejection portions each provided with nozzles for ejecting a plurality of different types of processing gases are provided on the head surface at predetermined intervals.   The ejection section has a multiple structure in which nozzle openings and / or nozzle tubes for independently ejecting different types of different processing gases are arranged concentrically, and the nozzle tube has an opening in the vicinity of the head surface, The film forming apparatus according to claim 2, wherein the film forming apparatus is connected to the flow path member so as to communicate with the flow path of the flow path member into which the processing gas ejected by the nozzle tube is introduced.   The film forming apparatus according to claim 3, wherein the nozzle tube is connected to a flow path member disposed on a side farther from the object to be processed as the nozzle tube located inside the multiple structure.   In the gas ejection head, the temperature of the flow path member positioned on the side of the object to be processed and the flow path member positioned on the side opposite to the object to be processed are controlled independently of each flow path member. The film-forming apparatus as described in any one of Claims 1-4.   6. The film forming apparatus according to claim 5, wherein in the gas ejection head, the temperature of each flow path member is controlled independently. The diffusion chamber is provided in the vicinity of substantially the center of each channel member, claim processing gas through the nozzle side flow path extending radially from the diffusion chamber to the nozzles are supplied 1-6 The film-forming apparatus as described in any one of these .

Images