JP3804011B2 - Manufacturing method of semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention provides a semiconductor device.SusMore specifically, with respect to the manufacturing method, at the time of manufacturing a semiconductor device formed as a recording head of an ink jet printer, an element formed in the integrated circuit of the semiconductor chip is electrically destroyed by processing such as sandblasting or dry etching. It belongs to the technical field for preventing this.
[0002]
[Prior art]
For example, a recording head of a thermal ink jet printer has a heater (heating resistor) and its drive circuit formed on a semiconductor chip, an ink groove and an ink supply hole, and a cavity serving as an ink chamber above each heater. After the semiconductor device having the above structure is manufactured, an orifice plate is attached to the entire surface of the semiconductor device, and an orifice (nozzle) serving as an ink discharge port is opened at a position corresponding to each heater.
[0003]
Here, the ink groove and the ink supply hole are conventionally made by using a photoresist to mask areas other than the ink groove and the ink supply hole, and using an etching solution such as hydrazine or potassium hydroxide (KOH) to form a semiconductor. The chip was formed by anisotropic etching. However, hydrazine has a very high carcinogenic potential, and there is a danger of explosion, and KOH is a very strong etching solution, so that resist peeling occurs, and even areas other than ink grooves and ink supply holes There was a problem of risk of damage.
[0004]
On the other hand, a method of forming an ink groove or an ink supply hole by a laser beam or a sandblast method is also used. For example, in the sandblasting method, areas other than ink grooves and ink supply holes are masked, and small diameter particles such as alumina are sprayed onto a semiconductor device at high speed, so that ink grooves are simultaneously applied to a plurality of semiconductor chips formed on a semiconductor wafer. And ink supply holes are formed. The sandblasting method has the advantage that the ink grooves, ink, and ink supply holes can be formed more cleanly and efficiently than the laser beam.
[0005]
[Problems to be solved by the invention]
However, in the sandblasting method, small-sized particles are blown by dry air, so that static electricity is generated due to friction between the particles and air, and the surface of the semiconductor chip is charged up, which may cause electrostatic breakdown of the semiconductor device. There was a problem. For example, the above-described recording head for a thermal ink jet printer has a problem in that a drive circuit formed as an integrated circuit on a semiconductor chip may be electrostatically destroyed during its manufacture.
[0006]
In the recording head for the thermal ink jet printer described above, the orifice is usually formed by masking an area other than the position corresponding to each heater and dry etching the orifice plate. However, in the case of dry etching, when the orifice is opened, molecules in the ion plasma state are charged up on the oxide film formed on the heater, and the drive circuit connected to the heater is destroyed. There was a problem that sometimes.
[0007]
  An object of the present invention is to solve the above-mentioned problems of the prior art, and an ink formed as an integrated circuit on a semiconductor chip formed as a recording head of an ink jet printer by processing during manufacturing such as sandblasting or dry etching. Semiconductor device having a structure capable of preventing electrical destruction of elements constituting a drive circuit for driving ejection meansSusIt is to provide a manufacturing method.
[0008]
[Means for Solving the Problems]
  In order to achieve the above object, the present invention provides:Ink jet head semiconductor device manufacturing method, integrated circuit comprising ink discharge means and drive circuit for driving each ink discharge means on each of a plurality of chip portions partitioned by a scribe line region set on a wafer surface And a step of forming a metal film in a predetermined region of the scribe line region and each chip portion on the surface of the semiconductor wafer for a semiconductor wafer provided with at least an insulating film covering each integrated circuit, and Processing the semiconductor wafer by a sandblast method with the metal film grounded to form an ink supply path for supplying ink to the ink discharge means; and in the scribe line region of the metal film While removing the corresponding scribe line metal film part, the chip part Cutting the semiconductor wafer along a dividing scribe line and dividing the semiconductor wafer into a plurality of chip-shaped inkjet head semiconductor devices, and the metal film formed in the step of forming the metal film, Each chip portion covers at least a part of a region corresponding to the integrated circuit on the surface of the insulating film, and extends from the metal film portion covering the integrated circuit to the end of the corresponding chip portion. And providing a method for manufacturing a semiconductor device, wherein the semiconductor device is connected to a metal film portion corresponding to the scribe line region.
[0009]
  Here, the metal film preferably covers the entire region of the insulating film corresponding to the integrated circuit in each chip portion.
[0010]
  The metal film formed in the step of forming the metal film further covers the bonding pad of the integrated circuit in each chip part, and the corresponding chip part from the metal film part covering the bonding pad. It is preferable to extend to the end of the metal film and to be connected to the metal film portion corresponding to the scribe line region.
[0011]
  The step of forming the metal film includes forming the metal film and grounding the peripheral region of the semiconductor wafer outside the plurality of chip portions connected to the metal film covering the scribe line region. When the electrode pad is formed and the ink supply path is formed by the sandblast method, it is preferable that the metal film is grounded by grounding the ground electrode pad.
[0012]
  Further, the ink discharge means is a heating resistor, and the metal film is formed using the material of the heating resistor simultaneously with the formation of the heating resistor when the heating resistor is formed. It is preferable.
[0013]
  A step of performing a gold plating process on the surface of the metal film; and a step of performing a thermal oxidation process on a surface of the heating resistor formed at the same time as the metal film after performing the gold plating process. When the film is subjected to gold plating, at least a portion covering the integrated circuit region and the scribe line region is masked in the metal film, and a gold plating material is applied to a portion covering the integrated circuit region and the scribe line region. It is preferable to prevent the adhesion of.
[0014]
  In addition, it is preferable to form a back metal film that forms the metal film and covers the surface of the semiconductor wafer opposite to the side on which the integrated circuit is provided.
[0015]
  The semiconductor device is a thermal inkjet head semiconductor device that discharges ink droplets from an orifice provided on an orifice plate, and the orifice plate is laminated on the surface of the semiconductor wafer after forming the ink supply path. Preferably, the method includes a step of forming an orifice in the orifice plate by a dry etching method, and the metal film is grounded when the orifice is formed by the dry etching method.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
  Semiconductor device according to the present inventionSusThe manufacturing method will be described in detail below on the basis of preferred embodiments shown in the accompanying drawings.
[0017]
  First, the present inventionApplied semiconductor device manufacturing method, manufactured using semiconductor manufacturing technologyAs an example of the semiconductor device, a recording head of a thermal ink jet printer will be described.
[0018]
FIG. 1 is a schematic configuration diagram of an embodiment of a recording head of a thermal ink jet printer according to the present invention. As shown in the figure, a recording head 10 of a thermal ink jet printer includes heating resistors 11 (R1, R2,..., Rn) corresponding to individual orifices (nozzles) which are recording elements that perform printing, and driving circuits thereof. 12. The drive circuit 12 includes driver transistors T1, T2,..., Tn corresponding to the heating resistors R1, R2,.
[0019]
Here, one end of each of the heating resistors R1, R2,..., Rn is connected to a common ground GND, and the other end is connected to the source of each corresponding driver transistor T1, T2,. The drains of the driver transistors T1, T2,..., Tn are connected to a common power supply VDD, and control signals from the control circuit 14 are input to the gates thereof. The number of elements of the heating resistors R1, R2,..., Rn is not limited at all.
[0020]
In the recording head 10, on / off of the driver transistors T 1, T 2,. When the driver transistors T1, T2,..., Tn are turned on, current flows through the corresponding heating resistors R1, R2,..., Rn, and the heating resistors R1, R2,. Conversely, when the driver transistors T1, T2,..., Tn are turned off, no current flows through the heating resistors R1, R2,..., Rn, and the heating resistors R1, R2,.
[0021]
Next, the layout structure of the recording head of the above-described thermal ink jet printer will be described.
[0022]
  FIG. 2 is a layout sectional view of an embodiment of the recording head shown in FIG.
  The figure shows the present invention.Applied semiconductor device manufacturing method, manufactured using semiconductor manufacturing technologySemiconductor devicesAn example,In the recording head 10 of the thermal ink jet printer, first, an ink groove 18 for supplying ink to the orifice is formed on the surface of the semiconductor substrate 15 in the center of the region of the semiconductor chip 16 of the semiconductor substrate 15 such as a silicon substrate. It is formed so as to extend in a direction perpendicular to the paper surface of the figure so as to dig up.
[0023]
In order to supply ink to the ink groove 18, a plurality of ink supply holes (through holes) 20 that connect the back surface of the semiconductor substrate 15 of the semiconductor chip 16 and the ink groove 18 are provided in the ink groove 18. 18 holes are formed at predetermined intervals (perforated). The support frame 22 is a support member for placing the semiconductor chip 16, and the support frame 22 has ink grooves formed on the front side surface of the semiconductor substrate 15 of the semiconductor chip 16 through the ink supply holes 20. An ink groove (or ink supply hole) 24 for supplying ink supplied from an ink tank (not shown) is formed in 18.
[0024]
In addition, two orifice rows in which a plurality of orifices 26 are alternately arranged at equal intervals along the ink groove 18 are provided at symmetrical positions in the drawing with the ink groove 18 interposed therebetween. Each orifice 26 has a hollow circular shape, and is formed on an orifice plate 28 made of polyimide or the like laminated on the semiconductor chip 16. For example, in the case of 360 npi (nozzle / inch), the orifices 26 are arranged in a direction perpendicular to the paper surface at a pitch of about 71 μm per row, and a total resolution of 720 npi can be realized in two rows.
[0025]
A heating resistor 11 that controls the ejection of ink from each orifice 26 is formed above the semiconductor substrate 15 of the semiconductor chip 16 and below the orifice row. A drive circuit 12 for driving individual heating resistors 11 (R1, R2,..., Rn) is formed on the surface of the semiconductor chip 16 (semiconductor substrate 15) outside the orifice row with the ink groove 18 as the center. A partition wall 30 is formed between the surface of the semiconductor chip 16 and the orifice plate 28 to form an ink flow path for supplying ink from the ink groove 18 to each orifice 26.
[0026]
The ink passes from the ink tank through the ink groove 24 of the support frame 22 and passes through the ink supply hole 20 formed in the semiconductor chip 16 (semiconductor substrate 15), thereby forming an ink groove on the surface of the semiconductor chip 16 (semiconductor substrate 15). 18 and distributed to orifice rows formed on both sides of the ink groove 18 through an ink flow path formed by the partition wall 30. The individual heating resistors 11 (R1, R2,..., Rn) are controlled by the drive circuit 12 according to the image data, and a predetermined amount of ink is ejected from the corresponding orifices 26 respectively.
[0027]
  Next, referring to FIG.Applied semiconductor device manufacturing method, manufactured using semiconductor manufacturing technologyThe semiconductor device will be described in further detail.
[0028]
FIG. 3 is a plan view conceptually showing an embodiment of the semiconductor device of the present invention.
This figure conceptually shows a semiconductor wafer 34 on which a plurality of semiconductor chips of the recording head 10 of the thermal ink jet printer shown in FIG. 2 are formed. In FIG. 2, the recording head 10 includes two orifice arrays. However, for ease of explanation, FIG. 3 shows only one orifice array as in the recording head 10 shown in FIG. Shall be provided.
[0029]
As shown in the figure, the semiconductor device of the present invention is formed such that, in the state of individual semiconductor chips, the metal film 36 is covered with the upper layer of the region of the drive circuit 12 and extends to the end of the semiconductor chip 16. Has been. That is, the metal film 36 is configured by the upper covering region 36 a and the extending region 36 b of the driving circuit 12. Further, in the illustrated example, the metal film 36 is also covered on the bonding pad 38 and is formed so as to extend to the end of the semiconductor chip 16. In other words, the metal film 36 is further constituted by a covering region 36c and an extending region 36d, which are upper layers of the bonding pad 38. Note that the covering region 36c covered with the upper layer of the bonding pad 38 and the metal film 36 of the extending region 36b formed up to the end of the semiconductor chip 16 may be provided as needed.
[0030]
On the other hand, in the state of the semiconductor wafer 34, the metal film 36 is further covered along the region (scribe line) 40 between the individual semiconductor chips 16 to form a line region 36 e and extend to the ends of all the semiconductor chips 16. The extending regions 36 b and 36 d of the metal film 36 formed so as to exist are connected to each other by the line region 36 e of the metal film 36 formed on the scribe line 40. A grounding pad 42 is formed of the same metal film on the peripheral edge of the semiconductor wafer 34 other than the semiconductor chip 16 and is connected to the metal film 36 covered along the scribe line 40.
[0031]
All the semiconductor chips 16 formed on the semiconductor wafer 34 are separated by the scribe line 40 after the manufacturing process is finished, and separated into individual semiconductor chips 16. At this time, the metal film 36 in the line region 36e formed on the scribe line 40 in the state of the semiconductor wafer 34 is removed when it is separated into the state of the individual semiconductor chips 16. As a result, each semiconductor chip 16 includes a covering region 36 a covered with the upper layer of the driving circuit 12, an extended region 36 b formed so as to extend to the end of the semiconductor chip 16, and an upper layer of the bonding pad 38. Only the metal film 36 of the covering region 36c covered with the semiconductor layer 16 and the extending region 36d formed up to the end of the semiconductor chip 16 remain.
[0032]
Note that the metal film 36 may cover the entire surface of the drive circuit 12 (the entire coating region 36a), or may not cover a part thereof as necessary. For example, only a part of the entire area of the drive circuit 12 excluding a part that causes a problem in the electric circuit such as an electrostatic capacity affecting the circuit may be covered with the metal film 36. In each semiconductor chip 16, the metal film 36 (line region) formed on the scribe line 40 from both metal films 36 (cover regions 36 a and 36 c) covered on the upper layer of the drive circuit 12 and the bonding pad 38. 36e) may be extended (extended), or one or more of these metal films 36 may be connected on the semiconductor chip 16 to the metal film 36 on the scribe line 40.
[0033]
As the metal film 36 used in the present invention, a known metal used as a material for forming the heating resistor 11, such as TaSiO, or the like, and driving with the heating resistor 11 from the viewpoint of facilitating the manufacturing process of the semiconductor device described later. A known metal that is a material of a conductive wire that connects to the circuit 12, such as Ni, can be mentioned, but in addition, a normal semiconductor manufacturing such as Al, W, Ti, Mo, Ta, Pt, Au, etc. Any metal or alloy thereof used in the process can be used. Note that these metals may be used alone or in combination, for example, in a stacked manner.
In the present invention, the thickness of the metal film 36 is not particularly limited, but is preferably 10 nm (100 Å) or more and 10 μm or less, more preferably 0.1 μm (100 nm) to 1 μm.
Needless to say, at least some insulating film is interposed between the metal film 36 and the drive circuit 12 or the bonding pad 38. Any insulating film can be used as long as it can be electrically insulated.₂, SiN, borosilicate glass, polyimide, and the like that are often used in semiconductor devices.
[0034]
Hereinafter, a flowchart showing a manufacturing process of a semiconductor device formed as a recording head of the ink jet printer shown in FIG. 4, and a manufacturing process of the semiconductor device shown in FIGS. 5 (a) to (d) and FIGS. 6 (a) to (b). The method for manufacturing a semiconductor device of the present invention will be described with reference to the process drawings. 5A to 5D are cross-sectional views taken along line AA of FIG. 3 in steps S1, S4, S6 and S8 of the flowchart of the manufacturing process shown in FIG. 4, respectively. b) is a sectional view taken along line BB in FIG. 3 in steps S1 and S3 of the flowchart of the manufacturing process shown in FIG.
[0035]
First, in step S1, in the semiconductor device in the state of the semiconductor wafer 34, each semiconductor chip 16 on the semiconductor substrate 15 is used as shown in FIG. 5A and FIG. A drive circuit 12 is formed in the region.
Thereafter, as shown in FIG. 5A, a protective layer 44 of the drive circuit 12 such as a TEOS layer is formed on the drive circuit 12 and its peripheral portion, and is further formed on both sides of the drive circuit 12. For example, an Al wiring 46 from the drive circuit 12 is formed.
[0036]
Subsequently, the heating resistor 11 is formed in step S2. For example, a metal film that is a material of the heating resistor 11, for example, a TaSiO layer 37 a, and a metal film that is a material of a conductive wire that connects the heating resistor 11 and the drive circuit 12, such as a Ni layer 37 b, are formed on the entire surface of the semiconductor wafer 34. The two-layer metal film 36 is coated, and the two-layer metal film 36 is photo-etched using a mask for forming a heating resistor. The region where only the Ni layer 37b, which is the material of the conductive wire, in the two-layer metal film 36 is removed becomes the region of the heating resistor 11 (see FIG. 5B).
[0037]
Here, in this embodiment, the pattern of the mask for forming the heating resistor is changed, and the two-layer metal film 36 is etched. As a result, as shown in FIG. 6B, independently of the region of the heating resistor 11, two layers of the same TaSiO layer 37a / Ni layer 37b as the heating resistor 11 are formed on the upper side of the drive circuit 12. The film 36 is coated (Step S3). In FIG. 6B, the uppermost protective layer 44 of the drive circuit 12 is not shown. Further, the upper metal film 36 of the drive circuit 12 is formed up to the end of the semiconductor chip 16 to become an extended region 36b, and is mutually connected between all the semiconductor chips 16 on the semiconductor wafer 34 via the scribe line 40. Connected.
[0038]
In addition, at the same time when the heating resistor 11 is formed, the two layers of the metal film 36 (covering region 36c) are also formed on the bonding pad 38 (Al wiring 46) formed on each semiconductor chip 16 by the same photoetching process. ) (See FIG. 5B). In this case, at least the metal film 36 (covered region 36c) covered with the upper layer of the bonding pad 38 corresponding to the ground terminal extends to the end of the semiconductor chip 16 to form an extended region 36d. The metal film 36 (line region 36e) coated on the line 40 is connected.
[0039]
At the same time, a grounding pad 42 (see FIG. 3) is formed in a region other than the semiconductor chip 16 at the peripheral edge of the semiconductor wafer 34 in the same photoetching process. The grounding pad 42 is also connected to the two-layer metal film 36 that is also coated on the scribe line 40. The number of ground pads 42 is not limited, and may be any number as long as it is one or more.
[0040]
Thus, by using the heating resistor and the metal film 36 for forming the conductor, the metal film 36 can be coated on the upper layer of the drive circuit 12 and the bonding pad 38 without increasing the number of manufacturing steps. The material for the heating resistor and the conductor is not limited to the above embodiment, and other materials may be used. Further, the process of forming the heating resistor 11 and the conductor and the process of forming the upper metal film 36 of the drive circuit 12 may be separate processes. In this case, there is an advantage that the material for the heating resistor and the conductor and the material of the metal film 36 on the upper layer of the drive circuit 12 can be separated.
[0041]
When the material for the heating resistor and the conductor and the material of the metal film 36 on the upper layer of the drive circuit 12 are separated, the metal film 36 covering the upper layer of the drive circuit 12 may be, for example, Al, W, Ti, Mo , Ta, Pt, etc., all metals or their alloys used in the normal semiconductor manufacturing process can be used. Further, the metal film 36 may cover the entire upper layer of the drive circuit 12 or may partially cover it as necessary.
[0042]
In addition, the scribe line 40 from the drive circuit 12 and the bonding pad 38 to the upper layer (cover region 36a and 36c), the scribe line 40 (line region 36e), and the drive circuit 12 and the bonding pad 38 except for the heating resistor. The metal film 36 (extending regions 36b and 36d) formed so as to extend to the upper limit is not limited to a two-layer film, and may be a single-layer film or a multi-layer film of three or more layers. For example, a metal film 36 formed so as to extend from the drive circuit 12 and the bonding pad 38 to the scribe line 40 on the scribe line 40 on the drive circuit 12 and the bonding pad 38 except for the heating resistor. It is good also as a 1 layer film | membrane only of TaSiO.
[0043]
Subsequently, as shown in FIG. 5B, gold plating is performed on the bonding pads 38 and the ground pads 42 of each semiconductor chip 16 by electrolytic / electroless plating (S4). Thereby, it is possible to prevent the bonding pad 38 and the grounding pad 42 from being oxidized during the next thermal oxidation step, and to maintain their conductivity. It is preferable to perform the gold plating process after masking regions other than the bonding pad 38 and the grounding pad 42 of each semiconductor chip 16.
[0044]
When gold plating is performed without masking, gold plating is applied not only to the bonding pad 38 and the grounding pad 42 but also to the metal film 36 on the drive circuit 12 and the scribe line 40, and the usage amount of the gold plating solution jumps. Increase. Therefore, the amount of gold plating solution used can be greatly reduced by masking as described above. Note that a gold plating process may also be performed on the Ni conductor (37b) connecting the heating resistor 11 and the drive circuit 12. If it carries out like this, it will become possible to reduce the resistance value of conducting wire.
[0045]
Subsequently, the surface of the heating resistor 11 is subjected to a thermal oxidation process (S5). As a result, an electrical insulating coating 11 a is formed on the surface of the heating resistor 11. This insulating coating 11a is very excellent in strength and has corrosion resistance against ink. For this reason, a protective layer for the purpose of cavitation resistance and corrosion resistance, which is necessary for a recording head of a normal thermal ink jet printer, can be eliminated, the input energy can be reduced, and the size is small and the thermal efficiency is high. A recording head can be realized.
[0046]
Subsequently, as shown in FIG. 5C, the semiconductor substrate 15 of the semiconductor chip 16 in the region to be the ink supply hole 20 from the front side surface and / or the back side surface of the semiconductor wafer 34 (semiconductor substrate 15) by sandblasting. And a processing step of forming the ink groove 18 and a processing step of opening (piercing) the ink supply holes 20 penetrating the front and back of the semiconductor chip 16 (the semiconductor substrate 15) (S6).
Thereafter, as shown in FIG. 5D, a partition 30 is formed on the surface of the semiconductor chip 16, and a semiconductor wafer 34 (semiconductor chip 16) in which a cavity serving as an ink chamber 31 is formed on the heating resistor 11. An orifice plate 28 is attached to the surface (S7), and a processing step of opening (perforating) the orifice 26 by dry etching is performed (S8).
[0047]
Here, in the present invention, when the ink groove 18 is formed by the sand blasting method, when the ink supply hole 20 is opened, and when the orifice 26 is opened by dry etching, the processing is performed on the semiconductor wafer 34. The metal film 36 coated on the upper layer of the drive circuit 12, the bonding pad 38 and the grounding pad 42 is electrically connected (grounded) to the ground through the grounding pad 42 formed on the ground, and the electric charge is released to the ground. be able to. Thereby, according to this invention, it can prevent that the drive circuit 12 is destroyed electrically.
[0048]
  Semiconductor device of the present inventionSusThe manufacturing method is basically as described above.
  In the method for manufacturing a semiconductor device of the present invention, processing such as before the ink groove 18 is formed by the sandblasting method, before the ink supply hole 20 is opened, or before the orifice 26 is opened by dry etching. Before, the metal film 36 is provided on the surface side where the drive circuit 12 of each semiconductor chip 16 of the semiconductor wafer 34 is formed. However, the present invention is not limited to this, and as shown in FIG. In addition to the metal film 36, the metal film 50 is preferably provided on the back surface side of the semiconductor wafer 34 (semiconductor substrate 15). Note that the metal film 50 provided on the back surface side may be the same as or different from the metal film 36.
  In this case, the metal film 50 is preferably provided on the entire back surface of the semiconductor wafer 34 (semiconductor substrate 15).
[0049]
After the metal films 36 and 50 are formed on the front and back surfaces of the semiconductor wafer 34 on which the drive circuit 12 is formed in this way, the ink grooves 18 are formed by the sandblast method, the ink supply holes 20 are formed, or the orifice 26 is formed by dry etching. When a processing step such as opening is performed, even if static electricity is generated by the processing, the generated charge is more efficiently flowed to the ground than when the single-sided metal film 36 is coated only on the surface. Therefore, electrostatic breakdown of the drive circuit 12 can be prevented more reliably.
Note that after the processing of the ink grooves 18, the ink supply holes 20, and the orifices 26, the metal film 50 formed on the back surface of the semiconductor wafer 34 is removed by a process such as dry or wet etching, for example. preferable. Needless to say, unnecessary portions of the metal film 36 on the surface side may be removed after the processing by a similar process such as etching.
[0050]
It should be noted that processing such as excavation and drilling of the semiconductor substrate 15 of the semiconductor chip 16 may be performed by opening a surface on one side of the semiconductor chip 16, that is, on either the front side surface or the back side surface by the sandblast method. Alternatively, the holes may be opened simultaneously from both side surfaces or halfway from the surface on one side of the semiconductor chip, and then completely opened from the surface on the other side.
[0051]
In addition, the present invention can be applied to a recording head for a thermal ink jet printer using a semiconductor device regardless of whether the color is monochrome or color. In this case, any of various conventionally known recording head structures such as a top shooter type (face ink jet) and a side shooter type (edge ink jet) can be used. The number of orifice rows may be any number, and the number of printing elements is not limited.
[0052]
  In addition, the present invention provides a recording head for a thermal ink jet printer that discharges ink by heating, as in the above embodiment.Manufacturing methodInk jet printers of various types known in the art, such as a pressure type that ejects ink by vibrating a diaphragm (diaphragm) using a piezo element or an electrostatic force, etc.Manufacturing methodIt is applicable to. In the present invention, a thermal heating resistor, a pressure piezoelectric element, and the like are collectively expressed as an ink ejection unit.
[0053]
  Furthermore, the present invention provides a recording head for an ink jet printer.Manufacturing methodThe semiconductor device in which the element formed as an integrated circuit on the semiconductor chip may be electrically destroyed by the process at the time of manufacture without being limited toManufacturing methodIs equally applicable.
  The semiconductor device of the present invention has been described above.SusAlthough the manufacturing method has been described in detail with reference to various examples, the present invention is not limited to the above examples, and various improvements and modifications may be made without departing from the gist of the present invention. Of course.
[0054]
【The invention's effect】
As described in detail above, the present invention grounds the metal film formed on the upper layer of the integrated circuit or the bonding pad via the grounding pad formed on the semiconductor wafer, and performs the processing steps of the semiconductor manufacturing process. It is something to be applied.
As a result, according to the present invention, it is possible to prevent the elements formed in the integrated circuit of the semiconductor device from being electrically destroyed by processing steps such as sandblasting and dry etching, and the semiconductor device manufacturing yield. There is an effect that improvement of can be achieved.
[Brief description of the drawings]
FIG. 1 shows the present invention.Thermal inkjet printer manufactured using the manufacturing method of semiconductor devices2 is a schematic configuration diagram of an embodiment of the recording head.
2 is a layout cross-sectional view of an embodiment of the recording head shown in FIG. 1. FIG.
FIG. 3Manufactured using the semiconductor device manufacturing method ofIt is a top view which shows notionally one Example of a semiconductor device.
FIG. 4 is a flowchart of an embodiment showing each step of the semiconductor device manufacturing method of the present invention.
FIGS. 5A to 5D are process diagrams each showing a cross section taken along line AA of an example of the semiconductor device in each process of the method of manufacturing a semiconductor device of the present invention; FIGS.
FIGS. 6A and 6B are process diagrams showing a cross section taken along line B-B of an example of the semiconductor device in each process of the manufacturing method of the semiconductor device of the present invention. FIGS.
FIG. 7 is a process diagram showing another cross section of an example of a semiconductor device in another process of the method for manufacturing a semiconductor device of the present invention.

Claims (8)

A method for manufacturing an inkjet head semiconductor device, comprising:
On each of a plurality of chip portions partitioned by a scribe line area set on the wafer surface, an ink discharge means, an integrated circuit constituting a drive circuit that drives each ink discharge means, and an insulating film that covers each integrated circuit And at least a semiconductor wafer provided with
Forming a metal film in a predetermined region of the scribe line region and each chip portion on the surface of the semiconductor wafer;
Processing the semiconductor wafer by a sandblasting method with the metal film grounded, and forming an ink supply path for supplying ink to the ink ejection means;
A plurality of chip-shaped ink jet heads are formed by removing a scribe line metal film portion corresponding to the scribe line region from the metal film and cutting the semiconductor wafer along a scribe line defining the chip portion. Dividing into semiconductor devices,
The metal film formed in the step of forming the metal film covers at least a part of a region corresponding to the integrated circuit on the surface of the insulating film in each chip portion and covers the integrated circuit. A method of manufacturing a semiconductor device, characterized by extending from a metal film part to an end part of a corresponding chip part and connecting to a metal film part corresponding to the scribe line region. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the metal film covers the entire region of the insulating film corresponding to the integrated circuit in each chip portion. The metal film formed in the step of forming the metal film further covers a bonding pad of the integrated circuit in each chip part, and a corresponding chip part from the metal film part covering the bonding pad. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is connected to a metal film portion corresponding to the scribe line region. The step of forming the metal film includes the step of forming the metal film and grounding electrode pads connected to the metal film covering the scribe line region in a peripheral region of the semiconductor wafer outside the plurality of chip portions. Form the
The semiconductor device manufacturing method according to claim 1, wherein when forming the ink supply path by the sandblast method, the metal film is grounded by grounding the ground electrode pad. Method. The ink discharge means is a heating resistor,
The said metal film is formed using the material of the said heating resistor simultaneously with the formation of the said heating resistor when forming the said heating resistor. The manufacturing method of the semiconductor device of description. A step of gold plating the surface of the metal film;
After performing the gold plating process, and thermally oxidizing the surface of the heating resistor formed simultaneously with the metal film,
When the metal film is gold-plated, at least a portion of the metal film that covers the integrated circuit region and the scribe line region is masked, and a portion that covers the integrated circuit region and the scribe line region is masked. 6. The method of manufacturing a semiconductor device according to claim 5, wherein adhesion of a gold plating material is prevented. The back surface metal film which covers the surface of the opposite side to the side in which the said integrated circuit is provided of the said semiconductor wafer while forming the said metal film is formed in any one of Claims 1-6 characterized by the above-mentioned. Semiconductor device manufacturing method. The semiconductor device is a thermal ink jet head semiconductor device that ejects ink droplets from an orifice provided on an orifice plate,
After forming the ink supply path, the step of laminating the orifice plate on the surface of the semiconductor wafer, and forming an orifice in the orifice plate by a dry etching method,
The method of manufacturing a semiconductor device according to claim 1, wherein the metal film is grounded when the orifice is formed by the dry etching method.

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