JP3492135B2 - Heat flux meter - Google Patents

Heat flux meter

Info

Publication number
JP3492135B2
JP3492135B2 JP02889797A JP2889797A JP3492135B2 JP 3492135 B2 JP3492135 B2 JP 3492135B2 JP 02889797 A JP02889797 A JP 02889797A JP 2889797 A JP2889797 A JP 2889797A JP 3492135 B2 JP3492135 B2 JP 3492135B2
Authority
JP
Japan
Prior art keywords
tube
heat
receiving surface
heat receiving
outer frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP02889797A
Other languages
Japanese (ja)
Other versions
JPH10227703A (en
Inventor
昭一 甲斐
泰雄 早田
八郎 川島
一良 辻岳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamari Industries Ltd
Mitsubishi Heavy Industries Ltd
Original Assignee
Yamari Industries Ltd
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamari Industries Ltd, Mitsubishi Heavy Industries Ltd filed Critical Yamari Industries Ltd
Priority to JP02889797A priority Critical patent/JP3492135B2/en
Publication of JPH10227703A publication Critical patent/JPH10227703A/en
Application granted granted Critical
Publication of JP3492135B2 publication Critical patent/JP3492135B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Measuring Temperature Or Quantity Of Heat (AREA)

Description

【発明の詳細な説明】 【０００１】 【発明に属する技術分野】本発明は事業用、産業用のボ
イラ、加熱炉等の火炉内熱流束計に関する。 【０００２】 【従来の技術】従来の熱流束計を図５〜図８により説明
する。 【０００３】図５にて、基端閉の筒形の側筒０１の前端
部は径の大きい段差になっており、受熱板０２が挿入さ
れ、溶接ｆされている。また基端中央には穴があり、内
管０６が挿入され、溶接ｆされている。さらに基端周面
には溝があり、外管０４が挿入され、溶接ｆされてい
る。 【０００４】内管０６と外管０４間に、側筒０１の基端
面と所定の距離をあけて、中管０５が同軸に配置されて
いる。 【０００５】受熱板０２は、熱抵抗が大きく、温度差が
えられるよう、熱伝導率の小さいクロメル製である。ま
た側筒０１は、冷却効果を高め、受熱面中央との温度差
を大きくするため、熱伝導率の大きいアルメル製であ
る。 【０００６】内管０６内には２芯線（アルメル０３ａ−
アルメル０３ｂ）のシース管０７が通される。そして、
受熱板０２の中央と、内管０６近くの基端部に小穴があ
けられ、芯線がそれぞれ通され、溶接されている。受熱
板０２と基端部とのメンテナンス空間ａは受熱板０２や
芯線の溶接に必要不可欠である。冷却水は外管０４と中
管０５間から導入され、中管０５と内管０６間からリタ
ーンする。図６に回路図を示す。 【０００７】受熱板０２（クロメル材）と、芯線アルメ
ル０３ａとの溶接により、温度接点ｂの起電力が発生
し、側筒０１（アルメル材）と芯線アルメル０３ｂの溶
接により受熱板０２周囲と側筒０１の溶接部に温度接点
ｃの起電力が発生する。図の様にアルメル線、同志で電
圧０８を計測すれば熱電対の差動式が成立し、受熱板０
２の中央部の温度と受熱板周囲の温度との差、すなわち
温度差の起電力が発生することになる。 【０００８】上記の起電力を計測しても、ボイラ等の熱
流束を直接求めることは出来ない為、起電力と熱量の検
定が必要となる。図７は、検定する場合の概略図を表し
ている。検定は一般に黒体炉３１を用いる。耐火材３３
とヒータ３２からなり、小さな空洞が設けられている。
その空洞部に熱流計３０を挿入して熱量と電圧０８の関
係を得ることができる。熱量は以下のふく射量の計算式
で求められる。 Ｑ＝４．８８×１０-8＊ε1 ＊ε2 （ＴW 4 −ＴH 4 ） Ｋｃａｌ／ｍ2 ｈ ここに、 ε1 ：炉壁面からの放射率（黒体炉でありε1 ＝１） ε2 ：熱流計受熱面０１０の吸収率（通常ε2 ≒１とな
るように面に黒体塗料等を塗布する） ＴW ：炉壁面の絶体温度（°Ｋ） ＴH ：受熱板の絶体温度（°Ｋ）（通常無視出来る） ４．８８×１０-8：ステファンボルツマン常数（Ｋｃａ
ｌ／ｍ2 ｈ°Ｋ） すなわち、黒体炉３１の炉壁面の温度と、熱流計３０の
電圧０８を求めることによって、図８に示す様な、縦軸
熱量、横軸電圧にて検定カーブを得ることが出来る。こ
の検定カーブから実際の加熱炉、ボイラ等の熱流束を求
めることが可能となる。 【０００９】 【発明が解決しようとする課題】上記従来の熱流束計の
エレメント部は、構造上及び製作面で下記の問題点があ
った。 受熱板と側筒の溶接において異種金属同志の結合で
あり、熱膨張率が違うため、特に受熱板部で溶接後の冷
却時にクラックが発生し、製作上、歩止まりが悪い。 受熱板及び側筒に起電力を得るため、芯線を穴に挿
入して溶接するが、余りに芯線が細いため溶接不良が発
生する場合もある。 内管と側筒も通常は同様、異種金属の溶接となる
ため、不完全結合となり冷却水の濃洩（極小である
が）、引いては芯線同志に絶縁不良が発生する。 従来のエレメントの構造上、熱電対に用いる材質を
選択すれば、熱流束に対する起電力値を大きく得るため
にも受熱板は熱伝導率が小さいクロメル、側筒は受熱面
の表面温度を小さくするため、熱伝導率が大きいアルメ
ルが通常最適である。しかし、従来の様な構造では、ア
ルメル棒、クロメル棒を加工するため、原材料を特注す
る必要がある。（国外、国内のメーカでも入手が困難） 熱流束計を実際のボイラ等にて挿入して、熱流束を
計測する場合、炉壁面に受熱板をきっちり合せることは
むずかしく、従って余分に炉内に挿入するのが通常であ
るが、側筒の周囲（側面）から熱流束を受け、起電力値
に若干の誤差を発生させる。 メンテナンス空間に若干の水分（受熱板と側筒の溶
接不良から空気が出入りして空気中の水分がいたづらす
るときもある）があれば、絶縁不良の原因となる。 【００１０】本発明は上記問題点を解決することを課題
とする。 【００１１】 【課題を解決するための手段】本発明は上記課題を解決
するため次の手段を講ずる。 【００１２】先端面閉で先端面より小径の筒形の受熱面
筒と、基端閉の筒形で基端に上記受熱面筒の外径に同じ
径の穴を持つとともに内径が同受熱面筒の先端面の外径
に同じ外枠管と、上記受熱面筒の基端につながれる内管
と、上記外枠管の基端につながれる外管と、上記内管お
よび外管間に配置される中管と、上記受熱面筒の先端面
中央に穴をあけ先端部が挿入されるとともに固着される
シース管型の第１の熱電対と、上記受熱面筒の側面に径
方向の穴をあけ先端部が挿入されるとともに固着される
シース管型の第２の熱電対とを有し、上記受熱面筒は外
枠管内に挿入され、かつ同受熱面筒、外枠管および上記
シース管は同一材料製である。 【００１３】以上において、先端部が計測対象の火炉内
に挿入される。そして、外管と中管間に冷却水が導入さ
れ、先端部で中管と内管間からリターンされる。すると
受熱面筒の先端面は熱負荷を直接受けるため、高い温度
になり、その側面は外枠管で熱遮へいされるとともに基
端部は冷却されるので大きい温度傾斜がえられる。これ
らは第１の熱電対と第２の熱電対により検出され、火炉
内の熱流束が算出される。 【００１４】このようにして、構成が簡単であるので小
型化できる。受熱面筒、外枠管およびシース管が同一材
料であるため、固着性がよく、かつそれぞれの固着部の
熱応力が減少し、接続部の耐久性が大幅に向上する。 【００１５】 【発明の実施の形態】本発明の実施の一形態を図１〜図
４により説明する。 【００１６】図１と図２にて、受熱面筒２は先端面閉
で、筒部は先端面より小径の筒形になっている。また基
端部は外周面が削られている。外枠管３は基端閉の筒形
で、内径が受熱面筒２の先端面の外形と同一であり、基
端面に受熱面筒２の筒の外径と同径の穴があけられてい
る。そして受熱面筒２は外枠管３内に挿入され溶接ｆさ
れる。 【００１７】内管６は受熱面筒２の基端部に挿入され溶
接される。また外枠管３の基端部外周面は削られ、外管
４の先端部に挿入され溶接される。さらに内管６と外管
４間に中管５が配置される。 【００１８】受熱面筒２の先端面中央には穴ｄがあけら
れ、図３に示すようなシース管０７型のアルメル線０３
ａ、クロメル線０３ｃを持つ第１の熱電対７ａが挿入さ
れ、シース管０７が溶接ｆされる。また受熱面筒２の筒
部には径方向の穴ｅがあけられ同様に第２の熱電対７ｂ
が挿入され、溶接ｆされる。図１図中、８は端末ボック
ス、９は冷却水供給管、１０は冷却水もどし管、１１は
ターミナルボックス、１２はリード線である。 【００１９】なお受熱面筒２、外枠管３、シース管０７
はＳＵＳ製である。熱電対７ａ，７ｂ部の回路図を図４
に示す。熱電対７ａは接地型とし受熱面筒２に接地され
る。熱電対７ｂは非接地型で使用する。これらは差動式
にターミナルボックス１１で結線され、電圧０８はクロ
メル線０３ｃ間で計測される。 【００２０】以上において、先端部が計測対象の火炉内
に挿入される。そして、外管４と中管５間に冷却水が導
入され、先端部で中管と内管間からリターンされる。す
ると受熱面筒２の先端面は熱負荷を直接受けるため、高
温度になり、その側面は外枠管３で熱遮へいされるとと
もに基端部は冷却されるので大きい温度傾斜がえられ
る。これらは熱電対７ａと熱電対７ｂにより検出され、
火炉内の熱流束が算出される。 【００２１】このようにして、構成が簡単であるので小
型化できる。また受熱面筒、外枠管およびシース管が同
一材料であるため、溶接性がよく、かつそれぞれの溶接
部の熱応力が減少し、接続部の耐久性が大幅に向上す
る。 【００２２】熱電対を、差動式として使用するため、従
来例同様の原理で温度差の起電力を得ることが出来る。
さらに絶縁不良が従来例に較べ皆無となる。 【００２３】外枠管３と受熱面筒２の間に空気層ｇを設
置した。これにより外周部からの熱流束の影響を無視出
来るため、計測精度の向上が図れる。また従来例に較べ
筒部に取りつける熱電対７ｂの位置次第で大きな温度
差、すなわち、熱流束に対し、大きな起電力が発生する
ため、計測精度の向上が図れる。 【００２４】 【発明の効果】以上に説明したように、本発明は構成が
簡単であるので、小型化できる。また同一材料製なので
溶接性がよく、耐久性が向上する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat flux meter in a furnace such as a commercial or industrial boiler or a heating furnace. 2. Description of the Related Art A conventional heat flux meter will be described with reference to FIGS. [0005] In FIG. 5, the front end of a cylindrical side tube 01 whose base end is closed has a step with a large diameter, and a heat receiving plate 02 is inserted and welded. There is a hole in the center of the base end, the inner tube 06 is inserted and welded. Further, there is a groove in the base end peripheral surface, and the outer tube 04 is inserted and welded. A middle tube 05 is coaxially arranged between the inner tube 06 and the outer tube 04 at a predetermined distance from the base end surface of the side tube 01. [0005] The heat receiving plate 02 is made of chromel having a small thermal conductivity so that the thermal resistance is large and a temperature difference can be obtained. The side cylinder 01 is made of alumel having a high thermal conductivity in order to enhance the cooling effect and increase the temperature difference from the center of the heat receiving surface. In the inner tube 06, a two-core wire (Alumel 03a-
A sheath tube 07 of alumel 03b) is passed through. And
A small hole is made in the center of the heat receiving plate 02 and the base end near the inner tube 06, and the core wires are passed through and welded. The maintenance space a between the heat receiving plate 02 and the base end is indispensable for welding the heat receiving plate 02 and the core wire. The cooling water is introduced between the outer pipe 04 and the middle pipe 05, and returns from between the middle pipe 05 and the inner pipe 06. FIG. 6 shows a circuit diagram. [0007] By welding the heat receiving plate 02 (chromel material) and the core wire alumel 03a, an electromotive force at the temperature contact b is generated, and by welding the side tube 01 (alumel material) and the core wire alumel 03b, the periphery of the heat receiving plate 02 is formed. An electromotive force at the temperature contact c is generated at the welded portion of the cylinder 01. As shown in the figure, if the voltage 08 is measured with the alumel wire and the other, the differential type of the thermocouple is established and the heat receiving plate 0
2, a difference between the temperature at the center and the temperature around the heat receiving plate, that is, a temperature difference electromotive force is generated. [0008] Even if the above-mentioned electromotive force is measured, the heat flux of the boiler or the like cannot be directly obtained, so that it is necessary to verify the electromotive force and the amount of heat. FIG. 7 shows a schematic diagram in the case of performing the test. In general, a blackbody furnace 31 is used for the verification. Refractory material 33
And a heater 32, and a small cavity is provided.
The relationship between the calorific value and the voltage 08 can be obtained by inserting the heat flow meter 30 into the cavity. The amount of heat is determined by the following formula for calculating the amount of radiation. Q = 4.88 × 10 -8 * ε 1 * ε 2 (T W 4 -T H 4) Kcal / m 2 h here, epsilon 1: emissivity of the furnace wall (a blackbody furnace epsilon 1 = 1) ε 2: the absorption of the heat flow meter heat receiving surface 010 (typically applying a black coating material or the like on the surface so that ε 2 ≒ 1) T W: furnace wall of absolute body temperature (° K) T H: heat Absolute temperature of plate (° K) (usually negligible) 4.88 × 10 -8 : Stefan Boltzmann constant (Kca
1 / m 2 h ° K) That is, by obtaining the temperature of the furnace wall surface of the black body furnace 31 and the voltage 08 of the heat flow meter 30, the calibration curve is obtained with the vertical axis calorie and the horizontal axis voltage as shown in FIG. Can be obtained. From this verification curve, it is possible to obtain the actual heat flux of the heating furnace, boiler, and the like. [0009] The element portion of the above-mentioned conventional heat flux meter has the following problems in structural and manufacturing aspects. In welding the heat receiving plate and the side tube, dissimilar metals are joined together, and the thermal expansion coefficients are different. Therefore, cracks are generated particularly at the time of cooling after welding in the heat receiving plate portion, and the yield is poor in manufacturing. In order to obtain an electromotive force in the heat receiving plate and the side tube, a core wire is inserted into a hole and welding is performed. However, since the core wire is too thin, poor welding may occur. Similarly, since the inner pipe and the side pipe are usually welded with different kinds of metals, they are incompletely connected and the cooling water leaks (although it is extremely small), and as a result, insulation defects occur between the core wires. In the structure of the conventional element, if the material used for the thermocouple is selected, in order to obtain a large electromotive force value for the heat flux, the heat receiving plate reduces the heat conductivity of the chromel, and the side tube reduces the surface temperature of the heat receiving surface. Therefore, alumel having a large thermal conductivity is usually optimal. However, with a conventional structure, it is necessary to custom order raw materials in order to process alumel bars and chromel bars. (It is difficult for foreign and domestic manufacturers to obtain it.) When measuring the heat flux by inserting a heat flux meter into an actual boiler, etc., it is difficult to fit the heat receiving plate exactly to the furnace wall, so extra It is usually inserted, but it receives a heat flux from the periphery (side surface) of the side tube and generates a slight error in the electromotive force value. If there is a small amount of water in the maintenance space (air may flow in and out due to poor welding between the heat receiving plate and the side tube, the water in the air may fluctuate), causing insulation failure. An object of the present invention is to solve the above problems. The present invention takes the following measures to solve the above-mentioned problems. A heat-receiving surface tube having a cylindrical shape having a closed front end surface and a smaller diameter than the front-end surface, and a heat-receiving surface having an inner diameter equal to the outer diameter of the heat-receiving surface tube at the base end having a base end closed shape. An outer frame tube having the same outer diameter as the outer diameter of the distal end surface of the tube, an inner tube connected to the base end of the heat receiving surface tube, an outer tube connected to the base end of the outer frame tube, and between the inner tube and the outer tube. A middle tube to be disposed, a sheath tube-type first thermocouple into which a hole is drilled at the center of the distal end surface of the heat receiving surface tube, and a distal end portion is inserted and fixed; A sheath tube type second thermocouple to which a hole is drilled and a tip portion is inserted and fixed, wherein the heat receiving surface tube is inserted into the outer frame tube, and the heat receiving surface tube, the outer frame tube, and The sheath tube is made of the same material. In the above, the tip is inserted into the furnace to be measured. Then, cooling water is introduced between the outer pipe and the middle pipe, and is returned from between the middle pipe and the inner pipe at the tip. Then, the distal end face of the heat receiving surface cylinder is directly subjected to a thermal load, so that the temperature becomes high, and the side face is heat shielded by the outer frame pipe and the base end part is cooled, so that a large temperature gradient is obtained. These are detected by the first thermocouple and the second thermocouple, and the heat flux in the furnace is calculated. In this way, the configuration is simple, so that the size can be reduced. Since the heat receiving surface tube, the outer frame tube, and the sheath tube are made of the same material, the fixing property is good, the thermal stress of each fixing portion is reduced, and the durability of the connecting portion is greatly improved. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIGS. In FIGS. 1 and 2, the heat receiving surface cylinder 2 is closed at the distal end surface, and the cylindrical portion has a smaller diameter than the distal end surface. Further, the outer peripheral surface of the base end is shaved. The outer frame tube 3 is a cylindrical tube having a closed base end, the inner diameter is the same as the outer shape of the distal end surface of the heat receiving surface tube 2, and a hole having the same diameter as the outer diameter of the tube of the heat receiving surface tube 2 is formed in the base end surface. I have. Then, the heat receiving surface tube 2 is inserted into the outer frame tube 3 and welded. The inner tube 6 is inserted into the base end of the heat receiving surface tube 2 and welded. Also, the outer peripheral surface of the base end portion of the outer tube 3 is shaved, inserted into the distal end of the outer tube 4 and welded. Further, a middle tube 5 is arranged between the inner tube 6 and the outer tube 4. A hole d is formed at the center of the front end surface of the heat receiving surface tube 2, and a sheath tube 07 type alumel wire 03 as shown in FIG.
a, the first thermocouple 7a having the chromel wire 03c is inserted, and the sheath tube 07 is welded f. A hole e in the radial direction is formed in the cylindrical portion of the heat receiving surface cylinder 2 and the second thermocouple 7b is similarly formed.
Is inserted and welded. In FIG. 1, 8 is a terminal box, 9 is a cooling water supply pipe, 10 is a cooling water return pipe, 11 is a terminal box, and 12 is a lead wire. The heat receiving surface tube 2, outer frame tube 3, sheath tube 07
Is made of SUS. FIG. 4 is a circuit diagram of the thermocouples 7a and 7b.
Shown in The thermocouple 7 a is of a grounding type and is grounded to the heat receiving surface tube 2. The thermocouple 7b is used in a non-grounded type. These are differentially connected by the terminal box 11, and the voltage 08 is measured between the chromel wires 03c. In the above, the tip is inserted into the furnace to be measured. Then, cooling water is introduced between the outer pipe 4 and the middle pipe 5, and is returned from between the middle pipe and the inner pipe at the tip. Then, the distal end surface of the heat receiving surface tube 2 directly receives a thermal load, so that the temperature becomes high. The side surface thereof is thermally shielded by the outer frame tube 3 and the base end portion is cooled, so that a large temperature gradient is obtained. These are detected by the thermocouples 7a and 7b,
The heat flux in the furnace is calculated. In this way, the configuration is simple, so that the size can be reduced. Further, since the heat receiving surface tube, the outer frame tube and the sheath tube are made of the same material, the weldability is good, the thermal stress of each welded portion is reduced, and the durability of the connection portion is greatly improved. Since the thermocouple is used as a differential type, an electromotive force having a temperature difference can be obtained by the same principle as in the conventional example.
Furthermore, there is no insulation failure compared to the conventional example. An air layer g was provided between the outer frame tube 3 and the heat receiving surface tube 2. As a result, the influence of the heat flux from the outer peripheral portion can be ignored, so that the measurement accuracy can be improved. Further, as compared with the conventional example, a large temperature difference, that is, a large electromotive force is generated with respect to the heat flux depending on the position of the thermocouple 7b attached to the cylindrical portion, so that the measurement accuracy can be improved. As described above, the present invention has a simple structure and can be downsized. In addition, since it is made of the same material, the weldability is good and the durability is improved.

【図面の簡単な説明】 【図１】本発明の実施の一形態の部分断面図である。 【図２】同一形態の受熱面筒部の詳細断面図である。 【図３】同一形態の熱電対の断面図である。 【図４】同一形態の回路図である。 【図５】従来例の断面図である。 【図６】同従来例の回路図である。 【図７】同従来例の作用説明図である。 【図８】同従来例の検定カーブ図である。 【符号の説明】 ０１ 側筒 ０１ａ 基板 ０２ 受熱板 ０３ａ，０３ｂ アルメル線 ０３ｃ クロメル線 ０４ 外管 ０５ 中管 ０６ 内管 ０７ シース管 ０８ 電圧計（電圧） ０９ 断熱材 １ 熱流束計 ２ 受熱面筒 ３ 外枠管 ４ 外管 ５ 中管 ６ 内管 ７ａ，７ｂ 熱電対 ８ 端末ボックス ９ 冷却水供給管 １０ 冷却水もどし管 １１ ターミナルボックス １２ リード線 ３０ 熱流束計 ３１ 黒体炉 ３２ ヒータ ３３ 耐火材[Brief description of the drawings] FIG. 1 is a partial sectional view of an embodiment of the present invention. FIG. 2 is a detailed cross-sectional view of a heat receiving surface cylindrical portion having the same configuration. FIG. 3 is a cross-sectional view of a thermocouple of the same embodiment. FIG. 4 is a circuit diagram of the same embodiment. FIG. 5 is a sectional view of a conventional example. FIG. 6 is a circuit diagram of the conventional example. FIG. 7 is an operation explanatory view of the conventional example. FIG. 8 is a diagram showing a test curve of the conventional example. [Explanation of symbols] 01 side tube 01a substrate 02 Heat receiving plate 03a, 03b Alumel wire 03c Chromel wire 04 outer tube 05 medium pipe 06 Inner tube 07 sheath tube 08 Voltmeter (voltage) 09 Insulation 1 heat flux meter 2 Heat receiving tube 3 outer frame pipe 4 outer tube 5 Middle tube 6 Inner tube 7a, 7b thermocouple 8 Terminal box 9 Cooling water supply pipe 10 Cooling water return pipe 11 Terminal box 12 Lead wire 30 heat flux meter 31 Blackbody furnace 32 heater 33 refractory materials

フロントページの続き (72)発明者 川島 八郎 長崎市深堀町五丁目717番１号 三菱重 工業株式会社長崎研究所内 (72)発明者 辻岳 一良 長崎県西彼杵郡香焼町字堀切3021番18号 山里産業株式会社長崎営業所内 (56)参考文献 特開 平８−304185（ＪＰ，Ａ) 実開 昭52−37984（ＪＰ，Ｕ) 実開 昭57−168030（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) G01K 17/08 G01K 7/02 Continuation of the front page (72) Inventor Hachiro Kawashima 5-717-1, Fukahori-cho, Nagasaki-shi Inside the Nagasaki Research Laboratory, Mitsubishi Heavy Industries, Ltd. Nagasaki Sales Office of Yamasato Sangyo Co., Ltd. (56) References JP-A-8-304185 (JP, A) Japanese Utility Model 52-37984 (JP, U) Japanese Utility Model Utility Model 57-168030 (JP, U) (58) Field (Int.Cl. 7 , DB name) G01K 17/08 G01K 7/02

Claims (1)

(57)【特許請求の範囲】 【請求項１】 先端面閉で先端面より小径の筒形の受熱
面筒と、基端閉の筒形で基端に上記受熱面筒の外径に同
じ径の穴を持つとともに内径が同受熱面筒の先端面の外
径に同じ外枠管と、上記受熱面筒の基端につながれる内
管と、上記外枠管の基端につながれる外管と、上記内管
および外管間に配置される中管と、上記受熱面筒の先端
面中央に穴をあけ先端部が挿入されるとともに固着され
るシース管型の第１の熱電対と、上記受熱面筒の側面に
径方向の穴をあけ先端部が挿入されるとともに固着され
るシース管型の第２の熱電対とを有し、上記受熱面筒は
外枠管内に挿入され、かつ同受熱面筒、外枠管および上
記シース管は同一材料製であることを特徴とする熱流束
計。(57) [Claims 1] A tubular heat-receiving surface tube having a closed front end surface and a smaller diameter than the front end surface, and a base-closed cylindrical shape having the same outer diameter as the heat-receiving surface tube at the base end. An outer frame tube having a hole with a diameter and an inner diameter equal to the outer diameter of the distal end surface of the heat receiving surface tube, an inner tube connected to the base end of the heat receiving surface tube, and an outer tube connected to the base end of the outer frame tube A tube, a middle tube disposed between the inner tube and the outer tube, and a sheath-tube-type first thermocouple to which a hole is drilled at the center of the distal end surface of the heat-receiving surface tube, and a distal end portion is inserted and fixed. A second thermocouple of a sheath tube type, which is formed by making a hole in the radial direction on a side surface of the heat-receiving surface tube and having a tip portion inserted and fixed, the heat-receiving surface tube being inserted into an outer frame tube; A heat flux meter, wherein the heat receiving surface tube, the outer frame tube and the sheath tube are made of the same material.
JP02889797A 1997-02-13 1997-02-13 Heat flux meter Expired - Fee Related JP3492135B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02889797A JP3492135B2 (en) 1997-02-13 1997-02-13 Heat flux meter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02889797A JP3492135B2 (en) 1997-02-13 1997-02-13 Heat flux meter

Publications (2)

Publication Number Publication Date
JPH10227703A JPH10227703A (en) 1998-08-25
JP3492135B2 true JP3492135B2 (en) 2004-02-03

Family

ID=12261200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02889797A Expired - Fee Related JP3492135B2 (en) 1997-02-13 1997-02-13 Heat flux meter

Country Status (1)

Country Link
JP (1) JP3492135B2 (en)

Families Citing this family (291)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7874726B2 (en) 2007-05-24 2011-01-25 Asm America, Inc. Thermocouple
US7946762B2 (en) * 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
USD702188S1 (en) 2013-03-08 2014-04-08 Asm Ip Holding B.V. Thermocouple
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
CN103698057A (en) * 2013-12-15 2014-04-02 绵阳富林岚科技有限责任公司 Heat-resistance heat flux sensor
CN103674342B (en) * 2013-12-15 2016-05-11 中国空气动力研究与发展中心超高速空气动力研究所 A kind of water cassette heat flow transducer
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR102263121B1 (en) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. Semiconductor device and manufacuring method thereof
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (en) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. Method of forming metal interconnection and method of fabricating semiconductor device using the same
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (en) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method of operating the same
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102613349B1 (en) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. Exhaust apparatus and substrate processing apparatus and thin film fabricating method using the same
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (en) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (en) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
KR102457289B1 (en) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (en) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (en) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (en) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
KR102597978B1 (en) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. Storage device for storing wafer cassettes for use with batch furnaces
CN111344522B (en) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 Including clean mini-environment device
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TW202325889A (en) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
CN111630203A (en) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 Method for depositing gap filling layer by plasma auxiliary deposition
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
EP3737779A1 (en) 2018-02-14 2020-11-18 ASM IP Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
KR102501472B1 (en) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. Substrate processing method
TW202344708A (en) 2018-05-08 2023-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
TWI816783B (en) 2018-05-11 2023-10-01 荷蘭商Ａｓｍ 智慧財產控股公司 Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (en) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (en) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (en) 2018-10-01 2020-04-07 Asm Ip控股有限公司 Substrate holding apparatus, system including the same, and method of using the same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
KR102605121B1 (en) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (en) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (en) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming device structure using selective deposition of gallium nitride, and system for the same
TWI819180B (en) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR20200091543A (en) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. Semiconductor processing device
CN111524788B (en) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 Method for topologically selective film formation of silicon oxide
TW202104632A (en) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
KR102626263B1 (en) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. Cyclical deposition method including treatment step and apparatus for same
TW202044325A (en) 2019-02-20 2020-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus
KR20200102357A (en) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for plug fill deposition in 3-d nand applications
TW202100794A (en) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing apparatus and method for processing substrate
KR20200108243A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Structure Including SiOC Layer and Method of Forming Same
KR20200108248A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME
KR20200108242A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
JP2020167398A (en) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー Door opener and substrate processing apparatus provided therewith
KR20200116855A (en) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
KR20200123380A (en) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR20200130121A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR20200130118A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Method for Reforming Amorphous Carbon Polymer Film
KR20200130652A (en) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP2020188255A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system including a gas detector
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (en) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP2021015791A (en) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． Plasma device and substrate processing method using coaxial waveguide
CN112216646A (en) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210010816A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
KR20210010820A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (en) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 Method of forming topologically controlled amorphous carbon polymer films
CN112309843A (en) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 Selective deposition method for achieving high dopant doping
CN112309899A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112309900A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (en) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. Liquid level sensor for a chemical source vessel
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (en) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (en) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
KR20210029090A (en) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR20210029663A (en) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
TW202129060A (en) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 Substrate processing device, and substrate processing method
KR20210043460A (en) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. Method of forming a photoresist underlayer and structure including same
KR20210045930A (en) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. Method of Topology-Selective Film Formation of Silicon Oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (en) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (en) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
KR20210065848A (en) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (en) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885692A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885693A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
JP2021090042A (en) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
TW202125596A (en) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming vanadium nitride layer and structure including the vanadium nitride layer
KR20210080214A (en) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. Methods for filling a gap feature on a substrate and related semiconductor structures
JP2021109175A (en) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー Gas supply assembly, components thereof, and reactor system including the same
KR20210095050A (en) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. Method of forming thin film and method of modifying surface of thin film
TW202130846A (en) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming structures including a vanadium or indium layer
TW202146882A (en) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210117157A (en) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. Method for Fabricating Layer Structure Having Target Topological Profile
KR20210124042A (en) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TW202146689A (en) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 Method for forming barrier layer and method for manufacturing semiconductor device
TW202145344A (en) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
KR20210132605A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Vertical batch furnace assembly comprising a cooling gas supply
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
KR20210134226A (en) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
KR20210141379A (en) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
KR20210143653A (en) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210145078A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
TW202201602A (en) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202218133A (en) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
TW202217953A (en) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
TW202219628A (en) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Structures and methods for use in photolithography
TW202204662A (en) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for depositing molybdenum layers
KR20220027026A (en) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. Method and system for forming metal silicon oxide and metal silicon oxynitride
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (en) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing material on stepped structure
KR20220053482A (en) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
TW202235675A (en) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Injector, and substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (en) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Also Published As

Publication number Publication date
JPH10227703A (en) 1998-08-25

Similar Documents

Publication Publication Date Title
JP3492135B2 (en) Heat flux meter
JP4214124B2 (en) Ear thermometer
JP4502256B2 (en) Flow sensor
JP2008530560A (en) Differential scanning calorimeter (DSC) with temperature controlled furnace
CN102353468B (en) Device for measuring temperature of solar cell sintering furnace and using method thereof
Diller Heat flux
Diller et al. Heat flux measurement
US5314247A (en) Dual active surface, miniature, plug-type heat flux gauge
JP3418407B2 (en) Temperature measurement type external connection mechanism for printed wiring boards
JP3492161B2 (en) Heat flow meter
JP3696861B2 (en) Heat flux meter, manufacturing method thereof, and assembly jig thereof
JPH09329503A (en) Temperature measuring apparatus with function for correction of heat transfer
De Lucas et al. Measurement and analysis of the temperature gradient of blackbody cavities, for use in radiation thermometry
JPS60209158A (en) Sample cell for heat flux differential scanning calorimeter
EP3249369B1 (en) Contactless temperature sensor for copper wires in movement
Martin et al. Calibration of thermocouples and infrared radiation thermometers by comparison to radiation thermometry
Ishii et al. Radiation thermometry standards at NMIJ from− 30° C to 2800° C
JP2003156395A (en) Infrared temperature sensor
JP2000019030A (en) Heat flux meter
JP2002195885A (en) Infrared sensor
Kreider et al. Calibration of Radiation Thermometers in Rapid Thermal Processing Tools Using Si Wafers with Thin‐film Thermocouples
CN207335900U (en) Heating and thermometric two functional temp sensor
Rall et al. Application and Selection
RU2676237C1 (en) Device for determining temperature of gaseous media in gas turbine engines
Hiraka et al. Rapid-response hybrid-type surface-temperature sensor

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20031014

LAPS Cancellation because of no payment of annual fees