JP3456915B2 - Components for semiconductor manufacturing equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for performing a predetermined process on a semiconductor wafer with a corrosive gas such as plasma generated from a halogen-based gas by high frequency or microwave. The present invention relates to a member for manufacturing equipment.

[0002]

2. Description of the Related Art In recent years, in semiconductor manufacturing processes, the use of corrosive gases such as plasma generated by introducing high frequency waves or microwaves into the atmosphere of halogen-based gases has been increasing. Such a corrosive gas is highly reactive, in the semiconductor manufacturing apparatus that performs a predetermined process using the corrosive gas, the members of the portion exposed to the corrosive gas, to ensure a certain member life, High corrosion resistance is required.
Typical examples of such members requiring high corrosion resistance include processing containers such as bell jars, electrostatic chucks, susceptors, and clamp rings.

On the other hand, in the semiconductor manufacturing process, there is another problem of particle contamination on the semiconductor wafer, and it is required that the members of the semiconductor manufacturing apparatus have high corrosion resistance and a small number of particles from the members. .

Conventionally, quartz or stainless steel has been used as such a member, but there is a problem that the member life is short because of insufficient corrosion resistance to the above-mentioned corrosive gas.

Therefore, ceramics sintered bodies such as alumina, aluminum nitride, yttrium-aluminum-garnet, etc. are being used as a member having excellent corrosion resistance in place of quartz or stainless steel.

During operation of the semiconductor manufacturing apparatus, at the surface portion of the member exposed to corrosive gas such as plasma of halogenated gas, the member and the corrosive gas react with each other to form a halide, so that the surface of the member is halogenated. An oxide film is formed. Since this halide is stable against corrosive gas, it has a function of reducing the corrosion rate of the member.

When the member is made of quartz or the like, the halide formed on the surface has a low boiling point and is rapidly volatilized, so that the corrosion proceeds at a high speed, but alumina, aluminum nitride, yttrium-aluminum- In a ceramics sintered body such as garnet, the boiling point of the halide formed on the surface of the member is high, and this film delays the progress of corrosion, so that it has higher corrosion resistance than quartz.

As described above, the halide film on the surface of the member has a low reactivity with the corrosive gas, but even then, the corrosion gradually progresses and is decomposed into a volatile substance and removed from the surface. Then, the surface of the new member is exposed and reacts with the corrosive gas to form a halide film again. Of this series of corrosion mechanisms,
The rate-determining step of the corrosion rate is the reaction rate between the halide and the corrosive gas. Therefore, it means that a halide film having a low reactivity with a corrosive gas has excellent corrosion resistance.

On the other hand, JP-A-10-45461, JP-A-10-45467, and JP-A-10-23687.
No. 1 discloses that the yttrium-aluminum-garnet sintered body has excellent corrosion resistance, and in order to obtain better corrosion resistance, the porosity is 3% or less and the surface roughness Ra is
Is disclosed to be 1 μm or less.

It has been conventionally known that yttrium-aluminum-garnet is excellent in corrosion resistance, but in the above technique, in the yttrium-aluminum-garnet and the like, as described above, the porosity and the surface roughness are reduced. As a result, it is possible to obtain a material having particularly high corrosion resistance to plasma of a fluoride gas.

In the above publication, the porosity and the surface roughness are made small by increasing the surface roughness Ra, the contact area exposed to the plasma increases, the plasma concentrates on the convex and concave portions, and the porosity increases. This is because if the value is large, the corrosion resistance decreases due to the selective corrosion of the pores. Therefore, the above-mentioned JP-A-10-45461 and JP-A-1
Japanese Patent Laid-Open No. 0-236871 describes that even when Ra is in the range of 1 μm, particularly, one in which Ra is remarkably reduced by a mirror surface treatment exhibits better corrosion resistance.

[0012]

However, during operation of the semiconductor manufacturing apparatus, the surface portion of the member used therein is a halide formed by reacting with the above-mentioned corrosive gas with the passage of time. Although it is covered with precipitates formed by substances evaporated due to wafer and wafer etching, etc., these halogenated films and precipitates tend to peel off when they grow to a certain thickness, which adversely affects semiconductor products. Cause the generation of particles.
In particular, when the surface roughness Ra is small as described above, such peeling is likely to occur. Therefore, there is a demand for a member that has high corrosion resistance and at the same time generates few particles.

Originally, the ceramics sintered body is a material having a low thermal shock resistance in which cracks are generated even with a slight temperature difference, so that the temperature difference such as a processing container in which a plasma atmosphere is formed is used. Is difficult to apply to.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a member for a semiconductor manufacturing apparatus which has sufficient corrosion resistance against a corrosive gas atmosphere and has few particles generated. To do. Moreover, in addition to such a thing, it aims at providing the member for semiconductor manufacturing apparatuses which is strong in a thermal shock.

[0015]

Means for Solving the Problems As a result of intensive studies to solve the above problems, the present inventors have constructed a member for a semiconductor manufacturing apparatus with a ceramics sintered body and have an allowable range of porosity of the sintered body. It has been found that by increasing the surface roughness to a certain degree and making the surface roughness rough, particles are less likely to be generated while maintaining sufficient corrosion resistance to a corrosive gas such as plasma of a halogen-based gas. Then, this effect, a semiconductor in the manufacturing apparatus for a member, remarkable especially when used as part or all of the semiconductor manufacturing process chamber for performing processing using the <br/> corrosive gases therein It was discovered that

While maintaining such surface roughness, yttrium-aluminum
It has been found that when garnet is used, the generation of such particles is reduced, and in particular, the particle suppression effect can be further enhanced by increasing the amount of SiO _{2 in} the sintered body to some extent.

Further, although the ceramics sintered body generally has low thermal shock resistance, it is possible to reduce the thermal stress generated in the member by devising the shape of the member. It was found that sufficient thermal shock resistance can be obtained as a container member.

The present invention has been made on the basis of such knowledge, and the first invention is a member for a semiconductor manufacturing apparatus used in a semiconductor manufacturing apparatus for processing by using a corrosive gas, which has pores. The ratio is 10% or less, and the surface roughness Ra is
Provided is a member for a semiconductor manufacturing apparatus, which is made of a ceramics sintered body having a size of 3 to 500 μm .

A second aspect of the present invention is a member for a semiconductor manufacturing apparatus, which is used as a part or the whole of a semiconductor manufacturing processing container in which a corrosive gas is used for processing, and has a porosity of 10% or less. And a member for a semiconductor manufacturing apparatus , which is made of a ceramics sintered body having a surface roughness Ra of at least 3 to 500 μm exposed to a corrosive gas.

A third aspect of the present invention is the second aspect of the present invention, in which the first spherical portion having a radius of curvature R1 of 300 mm or more and the second spherical portion having a radius of curvature R2 of 10 mm or more are continuous with the end of the first portion. Mainly a curved surface shaped portion composed of a spherical surface portion, and one of the first spherical surface portion and the second spherical surface portion is inscribed in the other, and the wall thickness of the curved surface shaped portion is in the range of 5 to 15 mm. A member for a semiconductor manufacturing apparatus is provided.

A fourth invention is the member for a semiconductor manufacturing apparatus according to any one of the first invention to the third invention, wherein the main constituent phase of the ceramics sintered body is a yttrium-aluminum-garnet sintered body. I will provide a.

A fifth aspect of the present invention is a semiconductor manufacturing apparatus member used in a semiconductor manufacturing apparatus that performs treatment using a corrosive gas, having a porosity of 10% or less and a surface roughness Ra of 3 to.
Provided is a yttrium-aluminum-garnet sintered body having a thickness of 500 μm, and the amount of SiO _{2 in} the member is more than 0.15 wt% and 10 wt% or less.

[0023]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be specifically described below. The member for semiconductor manufacturing equipment of the present invention has a porosity of 1
A semiconductor that is 0% or less and has a surface roughness Ra of 3 to 500 μm, is a semiconductor in which particles are less generated than conventional ones while maintaining excellent corrosion resistance. It has preferable characteristics as a member for manufacturing equipment.

As described above, when the surface roughness Ra of the ceramics sintered body is made larger than 3 μm, the unevenness of the surface of the member brings about an anchoring effect on the halogenated film and the precipitates formed on the surface, so that the halogenated The film and the precipitate are less likely to be peeled off, and the generation of particles is reduced. That is, since the surface roughness Ra is larger than 3 μm, the surface area is increased, and the number of sites for holding the halogenated film and the precipitates is increased. Also,
When Ra exceeds 500 μm, the anchor effect is sufficient, but the etching rate increases and the corrosion resistance decreases slightly, which is not preferable.

As a method of adjusting Ra to the above range , various processing treatments such as blasting can be mentioned, but the most preferable one is to set the range of burned-out surface of the sintered body to the above range . If it does not reach the above range after burning,
Processing is performed at the stage of the molded body, and after sintering it falls within the above range.
It may be set so as to be. The reason why the exposed surface is preferable is
This is because when the sintered body is processed to have the above range , microcracks are induced on the surface of the sintered body, and the electric field at the time of the plasma treatment is concentrated on the cracks, which lowers the corrosion resistance. Therefore, in order to obtain Ra within the above range by processing the sintered body, it is preferable to perform heat treatment such as heating the sintered body after processing to close cracks or blunt it.

Not only the surface roughness of the sintered body but also the pores on the surface of the ceramic sintered body forming the member contribute to the anchor effect. In other words, the presence of a large number of pores on the surface of the sintered body allows the halogenated film and the precipitates to be retained so as to bite into the pores, which makes it difficult for them to peel off and reduce the generation of particles. In order to contribute to the anchor effect as described above, the porosity of the sintered body is preferably 3% or more.

Such an anchor effect increases as the porosity increases, but when the porosity exceeds 10%, the connection between particles at the neck portion is weakened, and the generation of particles is rather increased due to the particles falling off. Not only does it reduce corrosion resistance. Therefore, the porosity of the sintered body is set to 10% or less.

By the way, generally, the corrosion resistance due to plasma etching is such that a small sample of which a part of the surface is masked with polyimide tape, Teflon tape or the like is irradiated with plasma from above, and the masking is peeled off after etching, resulting in a step or surface roughness. Is evaluated as the etching rate. In such an evaluation, the surface roughness Ra
However, in the above range, it is a fact that the corrosion resistance is slightly lower than that of a member having Ra of 1 μm or less, and it is also a fact that the corrosion resistance is slightly lowered by increasing the porosity. However, even if the surface roughness and the porosity are decreased in this way, the corrosion resistance does not decrease to the extent that it becomes a problem in the service life of the member, and rather, the halide film and the precipitates that cannot be evaluated by such a test are used. It is important to suppress the generation of particles due to peeling. The present invention is
In this way, the corrosion resistance is sacrificed to some extent to solve a major problem in the semiconductor manufacturing process that the generation of particles is reduced, and it has a great advantage as a whole.

As the ceramics sintered body constituting the member of the present invention, those generally used in this field can be applied, but it has high corrosion resistance to corrosive gas such as plasma such as halogen gas. Al ₂ O ₃ , AlN,
Si ₃ N _4, SiC, yttrium - aluminum - garnet (YAG) or the like is preferable.

Among these, yttrium-aluminum-
Garnet is particularly preferred. This is because the yttrium-aluminum-garnet sintered body has particularly less particles than other ceramics sintered bodies. this is,
The halide formed by the reaction of yttrium-aluminum-garnet with a corrosive gas is more resistant to a corrosive gas as compared with a halide formed on another ceramic sintered body such as alumina or aluminum nitride. This is because it is stable. That is, as described above, the series of cycles in which the surface is first covered with the halide film and the halide film is formed again on the exposed and corroded surface of the member is slow, and therefore the halide film is formed. This is because the rate at which the film peels off and particles are generated becomes slow.

In the yttrium-aluminum-garnet sintered body, SiO ₂ or the like is usually added as a sintering aid,
Although the sintered body is densified, when the porosity of the sintered body is set slightly higher in the range of 10% or less as in the present invention, the sintering aid for densification is originally It is unnecessary. However, if the porosity is slightly increased within the range of 10% without adding any sintering aid, the bond between the particles at the neck portion is weak, and when used as a member for a semiconductor manufacturing apparatus, it is corrosive. When exposed to gas, the neck portion is likely to be broken, resulting in increased particle generation due to shedding.

On the other hand, 0.15% by weight of SiO ₂
If added in the range of over 10 wt%, the sintering proceeds in liquid phase sintering, and the sintered particles are firmly bound to each other by the yttria-alumina-silica-based glass phase remaining in the grain boundary part. The generation of particles due to shedding is greatly reduced. Therefore, yttrium-
SiO ₂ in the aluminum-garnet sintered body is 0.
It is preferably in the range of more than 15% by weight and 10% by weight or less.

[0033] Yttrium was added in such an SiO ₂ the range of 10 wt% greater than 0.15 wt% - aluminum - garnet sintered corrosion resistance than that of SiO ₂ and 0.15 wt% or less Is a little lower. However, the yttria-alumina-silica-based glass that is present in the grain boundary portion by adding SiO ₂ has a relatively high corrosion resistance, although it is slightly inferior to the yttrium-aluminum-garnet particles, and therefore has a long service life. Corrosion resistance does not decrease to the point that it becomes a problem. Therefore, as described above, SiO ₂ is less than 0.
By adding it in the range of more than 15% by weight and 10% by weight or less, it is possible to further reduce the generation of particles, which is a larger problem for semiconductor manufacturing, while sacrificing corrosion resistance to some extent without causing any problems. Becomes

On the other hand, when the amount of SiO ₂ added to the yttrium-aluminum-garnet sintered body is increased, the proportion of silica in the yttria-alumina-silica based glass, which is the grain boundary phase, increases, and the yttria-aluminum is increased. -Since the corrosion resistance of silica-based glass decreases,
The corrosion resistance of the member deteriorates, and the added amount of SiO ₂ is 10% by weight.
If it exceeds, it becomes difficult for the corrosion resistance to satisfy the level required as a member for semiconductor manufacturing equipment. Therefore, S
When iO ₂ is added, the addition amount is 10% by weight or less.

Examples of semiconductor manufacturing apparatus members to which the present invention can be applied include processing containers such as bell jars, electrostatic chucks, susceptors, and clamp rings.
The present invention is particularly suitable for a processing container.

That is, the porosity is 10% or less, and at least the surface roughness Ra of the surface exposed to the corrosive gas is high.
By configuring the processing container member with the ceramics sintered body in the above range , it is possible to suppress the generation of particles due to the fall of halides and precipitates from the inner surface of the processing container, and to continuously operate the semiconductor manufacturing apparatus for a long period of time. It becomes possible to do. In this case, the processing container member may constitute the entire processing container or may form a part of the processing container.

In the case of the processing container, since the inner surface thereof is downward or vertical, the halide film or the deposit formed on the inner surface of the member by the halogen-based plasma always receives its own weight during the operation. Therefore, compared to other members, how strongly the halide film or the deposit adheres becomes a more important problem.

That is, when the processing container is made of a member having a small Ra as in the prior art, since the halide film and the precipitates do not adhere firmly, there is a danger that the film will fall off during operation and a large amount of particles will be generated. As a result, the continuous operation is difficult, resulting in a large decrease in productivity.

As described above, when the present invention is applied to the processing container member, it is preferable that the curved surface shape portion is mainly used.
The reason is that, as described above, the ceramics sintered body generally has low thermal shock resistance. Therefore, for example, when the processing container member shape has a sharp edge, thermal stress is concentrated on the edge portion, and This is because destruction is likely to occur. In order to avoid such thermal stress destruction, the processing container member is mainly composed of a curved surface portion, and the shape thereof has a radius of curvature of 300 mm or more (including a case where the radius of curvature is infinite, that is, a plane). And the radius of curvature is 1
It is preferable that the first spherical surface portion and the second spherical surface portion have a second spherical surface portion of 0 mm or more, and one of the first spherical surface portion and the second spherical surface portion is inscribed in the other.

Specifically, as shown in FIG. 1, the radius of curvature R1 of the first spherical surface portion 2 of the processing container member 1 is 300.
It is desirable that the second spherical surface portion 3 has a radius of curvature R2 of 10 mm or more, including at least mm (including infinity), and one of the spherical surface portions 2 and 3 is inscribed in the other.

The reason why R1 is set to 300 mm or more is 300
If it is less than mm, stress concentration tends to occur, and the effect of forming a curved surface decreases. Also, R2 is 1
The reason why it is set to 0 mm or more is that stress concentration is likely to occur when it is less than 10 mm. The stress concentration that occurs when R2 is less than 10 mm is particularly remarkable when R1 is infinite. The reason why one of the first spherical surface portion and the second spherical surface portion is inscribed in the other is that a sharp edge does not occur in this way.

The wall thickness of this curved surface portion is 5 to 15 mm.
Is preferred. When it is less than 5 mm, it is desirable from the viewpoint of thermal shock resistance, but the mechanical strength of the ceramics sintered body is not necessarily large, and therefore the structural soundness as a member remains a problem. In particular, in the case of a large processing container member, if it does not have a certain amount of wall thickness, insufficient strength will become a problem, and since the thermal expansion coefficient is relatively large, the thermal stress of the fixed part caused by the temperature difference will be destroyed. This is because the danger that causes On the other hand, if it exceeds 15 mm,
On the other hand, the mechanical strength is sufficient, but the thicker the wall, the lower the thermal shock resistance and the more likely it is to break due to thermal stress.

Next, an application example as a processing container member will be described. FIG. 2 is a sectional view showing an inductively coupled plasma etching apparatus to which the member of the present invention is applied. Reference numeral 10 in the drawing denotes a processing container member to which the present invention is applied. The processing container member 10 has a dome shape, and a metal lower chamber 11 is provided under the processing container member 10 so as to be in close contact with the processing container member 10, and a chamber 12 is constituted by these. A support table 13 is arranged in the upper part of the lower chamber 11, an electrostatic chuck 14 is provided thereon, and a semiconductor wafer 15 is placed on the electrostatic chuck 14. A DC power supply 16 is connected to the electrodes of the electrostatic chuck 14, and electrostatically adsorbs the semiconductor wafer 15 thereby. In addition, the support table 13 has an R
The F power source 17 is connected. On the other hand, the lower chamber 1
A vacuum pump 18 is connected to the bottom of the chamber 1 to evacuate the inside of the chamber 11. Further, a gas supply nozzle 19 for supplying an etching gas such as CF ₄ gas above the semiconductor wafer is provided above the lower chamber 11.
Is provided. An induction coil 20 is provided around the processing container member 10, and a high frequency of, for example, 400 kHz is applied to the induction coil 20 from an RF power source 21.

In such an etching apparatus, the inside of the chamber 12 is evacuated to a predetermined degree of vacuum by the vacuum pump 18, the semiconductor wafer 15 is electrostatically adsorbed by the electrostatic chuck 14, and then, for example, CF is used as an etching gas from the nozzle 19. By supplying power to the coil 20 from the RF power supply 21 while supplying ₄ gases, plasma of etching gas is formed in the upper portion of the semiconductor wafer 15, and the semiconductor wafer 15 is etched into a predetermined pattern. In addition,
By supplying power to the support table 13 from the high frequency power source 17, the anisotropy of etching can be enhanced.

During such an etching process, the inner surface of the processing container member 10 is subjected to a plasma attack and a fluoride film or the like is attached thereto. However, since the processing container member 10 is composed of the above-described member of the present invention, the corrosion resistance to plasma is high and the deposits are less likely to drop.

The member for a processing container of the present invention is not limited to the apparatus shown in FIG. 2 and can be applied to the etching apparatus shown in FIG. 3, those parts that are the same as those corresponding parts in FIG. 2 are designated by the same reference numerals, and a description thereof will be omitted. Here, a ceramic sub-chamber 22 extending upward is provided in the central portion of the ceiling wall of the processing container member 10. A gas introduction part 25 is provided above the sub-chamber 22, and the etching gas is introduced into the sub-chamber 22 from the gas introduction part 23. An induction coil 24 is wound around the sub-chamber 22, and the induction coil 24 has an RF power supply 25.
High frequency is supplied from. Therefore, by introducing the etching gas from the gas introducing unit 23 into the sub-chamber 22 and supplying a high frequency to the induction coil 24, plasma of the etching gas is formed in the sub-chamber 22 and the plasma is supplied to the semiconductor wafer 15. And is etched.

When the present invention is applied to a member for a processing container, the processing container is not limited to the above-mentioned one for etching, but may be any one used for a process using a corrosive gas such as CVD film formation. Good.

[0048]

EXAMPLES Examples of the present invention will be described below. (First Example) Here, an evaluation as a member for a semiconductor manufacturing apparatus was performed based on the amount of particles generated during operation of the semiconductor manufacturing apparatus and the amount of corrosion by a corrosive gas. Ion-exchanged water and a dispersant were added to each of a plurality of types of ceramic powders as raw materials, and they were mixed in a pot mill. The slurry thus formed was dried and granulated with a spray dryer, and a CIP molding was performed to obtain a clamp ring-shaped molded body. This molded body is processed into a shape corresponding to the processing container, and 1
It was fired at 400 to 1700 ° C. and used as a test clamp ring. Parallel plate type RIE
It was attached to an etching device and a test operation was performed. In the test operation, CF ₄ and O ₂ were introduced into the chamber at a ratio of 4: 1 as etching gas, and plasma which was a corrosive gas was generated by high frequency. After continuous operation for 100 hours, the number of particles on the 6-inch wafer and the amount of corrosion of the clamp ring due to the corrosive gas were examined to evaluate as a member for a semiconductor manufacturing apparatus. The results are shown in Table 1.

In Examples 1 and 2, the porosity was more than 3% and 10% or less, and the surface roughness Ra was 3 to 500 μm.
A certain yttrium-aluminum-garnet (YA
G) A member whose main constituent phase is a sintered body. They are,
Anchor effect is exhibited by the presence of moderate surface roughness and surface pores, and the resulting halogenated film and precipitates are less likely to peel off, so particles are less generated and it has excellent properties as a member for semiconductor manufacturing equipment. Was confirmed. Further, it was confirmed that the YAG sintered body has a high corrosion resistance, so that the generation of particles is less than that of other materials, and that it is particularly excellent as a member for a semiconductor manufacturing apparatus.

In Examples 3 and 4 , the porosity is more than 3% and 10% or less, and the surface roughness Ra is 3 to 500 μm.
It is a member whose main constituent phase is a certain 99.99% alumina sintered body. Although these are slightly inferior in corrosion resistance to those in Examples 1 and 2, the anchor effect is exhibited due to the presence of appropriate surface roughness and surface pores, and the generated halogenated film and the separation of precipitates are less likely to occur, and Occurrence was low.

In Examples 5 and 6 , the porosity is more than 3% and 10% or less, and the surface roughness Ra is 3 to 500 μm.
It is a member whose main constituent phase is a certain 99.5% alumina sintered body. Although these have corrosion resistance further inferior to those in Examples 3 and 4 , the anchor effect is exerted due to the presence of appropriate surface roughness and surface pores, and the generated halogenated film and precipitates are less likely to peel off. Since it was not generated, it was preferable as a member for semiconductor manufacturing equipment.

Comparative Examples 1, 2, 4, 5, 5, 7 and 8 have a surface roughness of 1 μm or less, a YAG sintered body and alumina 99.9.
This is a member whose main constituent phases are a 9% sintered body and an alumina 99.5% sintered body. These are too small surface roughness,
It was shown that the effective anchor effect was not exhibited, and the generated halide film and deposits were often peeled off, resulting in a large number of particles being generated, which is not preferable as a member for a semiconductor manufacturing apparatus.

Comparative Examples 3, 6 and 9 are members having a porosity of more than 10% as a main constituent phase of a YAG sintered body, an alumina 99.99% sintered body, and an alumina 99.5% sintered body. is there. It was confirmed that these are not preferable as a member for a semiconductor manufacturing apparatus, because the porosity is too high, the particles are weakly bound to each other, the particles are remarkably shredded, the particles are often generated, and the corrosion resistance is low.

Thus, the porosity is 10% or less,
Further, it has been found that a member having a ceramic sintered body having a surface roughness Ra of 3 to 500 μm as a main constituent phase has excellent characteristics as a member for a semiconductor manufacturing apparatus because it has few particles. In addition, a member whose main constituent phase is a YAG sintered body has a particularly small particle generation,
It was also confirmed that it has high corrosion resistance and is particularly excellent as a member for semiconductor manufacturing equipment.

[0055]

[Table 1]

(Second Embodiment) Y satisfying the condition that the porosity is 10% or less and the surface roughness Ra is larger than 1 μm.
When the amount of SiO ₂ in the AG sintered body was changed,
Similar to the first embodiment, evaluation as a member for a semiconductor manufacturing apparatus was performed by examining the number of particles on a 6-inch wafer and the amount of corrosion of a clamp ring due to corrosive gas, after continuous operation for 100 hours.

Similar to the first embodiment, a clamp ring composed of a member whose main constituent phase is a YAG sintered body having a porosity of more than 3% and 10% or less and a surface roughness Ra of more than 1 μm is used. It was made. Similarly, the produced clamp ring was attached to a parallel plate type RIE etching apparatus, and CF ₄ and O ₂ were used as etching gas in a ratio of 4: 1.
Introduced into the chamber at a rate of, a plasma that is a corrosive gas is generated by high frequency, and after 100 hours of continuous operation, by examining the number of particles on a 6-inch wafer and the amount of corrosion of the clamp ring by the corrosive gas The evaluation as a member for semiconductor manufacturing equipment was performed. The results are shown in Table 2.

Test Examples 1 and 2 are SiO _{2 of} YAG sintered body.
Since the amount was 0.15% by weight or less, although the corrosion rate was low, the number of particles generated was slightly increased, and it was confirmed that the material was slightly inferior as a member for a semiconductor manufacturing apparatus.

In Test Examples 3 to 7, SiO in the YAG sintered body was used.
_{Since the} amount of ₂ is more than 0.15% and 10% by weight or less, the particles of the sintered body are strongly bonded by the yttria-alumina-silica glass phase, the number of generated particles is small, and the corrosion rate is small, It was confirmed to have extremely preferable characteristics as a member for semiconductor manufacturing equipment.

In Test Examples 8 to 11, since the amount of SiO ₂ was 10% by weight or more, the number of particles generated was small, but the corrosion rate was high, and it was confirmed to be somewhat inferior as a member for semiconductor manufacturing equipment. It was

[0061]

[Table 2]

Thus, the porosity is 10% or less,
Moreover, the surface roughness Ra is larger than 1 μm, and SiO ₂
YAG with an amount of more than 0.15% by weight and 10% by weight or less
A member having a sintered body as a main constituent phase, while maintaining a good anchoring effect, and can be particularly effectively prevented from generating particles because particles are unlikely to fall off, and also has good corrosion resistance, It was confirmed to be particularly effective as a member for semiconductor manufacturing equipment.

(Third Example) Here, a member for a processing container as shown in FIG. 1 was manufactured as a member for a semiconductor manufacturing apparatus. As material, alumina 99.5%, alumina 9
9.99%, aluminum nitride, and YAG were selected and evaluated for each.

When manufacturing the processing container member, first,
0.2% by weight of silicon oxide, ion-exchanged water, and a dispersant were added to each ceramic powder, and they were mixed in a pot mill. The slurry thus formed was dried and granulated with a spray dryer, and a molded body was produced by CIP molding. Next, this molded body is processed into a processing container member shape and then fired, and R1 = 300 mm and R2 = 20 m in FIG.
A processing container member having m and t = 7 mm was obtained. All of these porosities were 10% or less. At the time of manufacturing such a member for a processing container, a member for a processing container having various surface roughnesses on the inner surface was manufactured by inner surface processing at the stage of molding and blasting after sintering.

Using the apparatus shown in FIG. 2 in which these processing container members are incorporated, CF ₄ and O ₂ are introduced into the chamber from the gas supply nozzle 19 at a ratio of 4: 1 and the RF power source 21 is fed to the induction coil 20. RF power of 1 kHz is applied to the support table 13 by applying a high frequency of 400 kHz to form plasma.
An etching treatment was performed while applying a high frequency of 7 to 13.56 MHz to evaluate the treatment container member of the present invention.

Table 3 shows the materials used, the surface roughness, and the evaluation results as a processing container member. The evaluation as a processing container member was performed by continuous operability. The evaluation criteria for continuous operability are those in which the film does not fall off for more than 500 hours.
(Good), and those in which the film did not come off for less than 500 hours were rated as x (impossible).

[0067] As shown in Table 3, Example surface roughness Ra of a portion corresponding to the inside vessel surface is 3～500Myuemu 7 to 14
For any material, 500hr during continuous operation
Before the lapse of time, the film did not fall off, showing good continuous operation.

On the other hand, in any of Comparative Examples 10 to 17 having a surface roughness Ra of 1 μm or less, there is a problem in continuous operability in any of the materials, during the test operation, the film falls off before the lapse of 500 hours. confirmed.

Thus, the porosity is 10% or less,
Surface roughness Ra of the surface exposed to corrosive gas is 3 to 500
It was confirmed that the ceramic sintered body having a thickness of μm has preferable characteristics as a member for a processing container, as compared with a ceramic sintered body having an Ra of 1 μm or less.

[0070]

[Table 3]

(Fourth Embodiment) Here, the porosity is 10
% Or less, surface roughness R of the surface exposed to corrosive gas
By changing the shape of the processing container member composed of a ceramics sintered body in which a is larger than 1 μm, the processing container member was manufactured by the manufacturing method as described above. Using the apparatus shown in FIG. 2 in which such a processing container member is incorporated, CF ₄ and O ₂ are introduced into the chamber from the gas supply nozzle 19 at a ratio of 4: 1 and the RF power source 21 to the induction coil 20.
A high frequency of 400 kHz is applied to form plasma
RF power supply 17 to 13.56 MHz on the support table 13.
The etching treatment was performed while applying the high frequency of 1., and each processing container member was evaluated.

Table 4 shows the shape of the processing container member and the evaluation results as the processing container member. The evaluation as a member for a processing container was performed based on the presence or absence of cracks (heat shock resistance).

Test Examples 12 to 20 satisfy the conditions that R1 is 300 mm or more, R2 is 10 mm or more, and the wall thickness is 5 to 15 mm. It was confirmed that the shape of the container member was preferable.

In Test Examples 21, 24, 27 and 30, since R2 was 10 mm or less, thermal stress exceeding the member strength was concentrated in the R2 portion due to the temperature rise of the member during the test operation, and a crack was generated.

In Test Examples 23, 26, 29, and 32, the wall thickness was less than 5 mm, so that they could not withstand the thermal stress due to the temperature rise of the members during the test operation, and cracks occurred.

In Test Examples 22, 25, 28, and 31, the wall thickness exceeded 15 mm, so cracking occurred due to thermal shock due to temperature rise of the member during the test operation.

As described above, when the present invention is applied to the processing container member, the processing container member has R1 of 300 mm or more and R
It has been confirmed that when 2 has a shape satisfying the conditions of 10 mm or more and the wall thickness of 5 to 15 mm, not only the generation of particles due to the removal of halide film and precipitates is suppressed but also cracks are less likely to occur. Was done.

[0078]

[Table 4]

[0079]

As described above, according to the present invention,
The member for semiconductor manufacturing equipment is composed of a ceramics sintered body, and the sintered body has a porosity of 10% or less and a surface roughness R.
By setting a to be 3 to 500 μm , it is possible to maintain sufficient corrosion resistance to a corrosive gas such as plasma of a halogen-based gas, while making it difficult to generate particles.
Then, this effect, among member for a semiconductor manufacturing apparatus, is remarkable especially when used as part or all of the semiconductor manufacturing process chamber for performing processing by using a food gas rot therein.

Further, while maintaining such surface roughness, yttrium-aluminum-as a ceramic sintered body was used.
When garnet is used, the generation of such particles is reduced, and in particular, when the amount of SiO _{2 in} the sintered body is more than 0.15 wt% and 10 wt% or less, the particle suppressing effect is further enhanced. be able to.

Further, although the ceramics sintered body generally has low thermal shock resistance, when it is applied as a processing container member, a first spherical surface portion having a radius of curvature R1 of 300 mm or more,
It is continuous with the end of this first portion and has a radius of curvature R2 of 1
Mainly a curved surface-shaped portion composed of a second spherical surface portion of 0 mm or more, one of the first spherical surface portion and the second spherical surface portion is inscribed in the other, and the wall thickness of the curved surface-shaped portion is 5
By devising the shape of the member so as to be in the range of up to 15 mm, the thermal stress generated in the member can be reduced,
Sufficient thermal shock resistance can be obtained as a member for a semiconductor manufacturing apparatus, particularly a member for a processing container.

[Brief description of drawings]

FIG. 1 is a sectional view showing an example of a processing container member to which the present invention is applied.

FIG. 2 is a diagram showing an example of a plasma etching apparatus using a member for a processing container to which the present invention is applied.

FIG. 3 is a diagram showing another example of a plasma etching apparatus using a processing container member to which the present invention is applied.

[Explanation of symbols]

1, 10; Processing container member 2; first spherical surface 3: Second spherical surface 12; Chamber 13; Support table 14; Electrostatic chuck 15; Semiconductor wafer 19; Gas supply nozzle 20, 24; induction coil 17, 21, 25; high frequency power supply 23; Gas introduction section

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Naomizu Odano               Taihei 1-2-23, Kiyosumi, Koto-ku, Tokyo               Yo Cement Co., Ltd. Research Division (72) Inventor Eiji Fukuda               Taihei 1-2-23, Kiyosumi, Koto-ku, Tokyo               Yo Cement Co., Ltd. Research Division (72) Inventor Chiharu Wada               Taihei 1-2-23, Kiyosumi, Koto-ku, Tokyo               Yo Cement Co., Ltd. Research Division (72) Inventor Atsushi Suzuki               3-5 Myoudori, Izumi-ku, Sendai-shi, Miyagi Stock               Company Ceratech Head Office Factory (72) Inventor Hiromichi Otaki               3-5 Myoudori, Izumi-ku, Sendai-shi, Miyagi Stock               Company Ceratech Head Office Factory (72) Inventor Yukio Kishi               3-5 Myoudori, Izumi-ku, Sendai-shi, Miyagi Stock               Company Ceratech Head Office Factory                (56) Reference JP-A-10-236871 (JP, A)                 Japanese Patent Laid-Open No. 10-45461 (JP, A)                 Japanese Unexamined Patent Publication No. 10-209064 (JP, A)                 Japanese Patent Laid-Open No. 10-45467 (JP, A)

Claims (5)

(57) [Claims] 1. A member for a semiconductor manufacturing apparatus used for a semiconductor manufacturing apparatus that performs treatment using a corrosive gas, having a porosity of 10% or less and a surface roughness Ra of 3 to 500 μm.
A member for a semiconductor manufacturing apparatus, which is made of a ceramics sintered body of m . 2. A member for a semiconductor manufacturing apparatus used as a part or the whole of a processing container for semiconductor manufacturing in which a process is performed using a corrosive gas, wherein the porosity is 10% or less, and at least A member for a semiconductor manufacturing apparatus , comprising a ceramic sintered body having a surface roughness Ra of 3 to 500 μm exposed to a corrosive gas. 3. A curved surface portion having a first spherical surface having a radius of curvature R1 of 300 mm or more and a second spherical surface having a radius of curvature R2 of 10 mm or more and being continuous with the end of the first portion. 7. One of the first spherical surface portion and the second spherical surface portion is inscribed in the other, and the wall thickness of the curved surface portion is in the range of 5 to 15 mm. 2. The member for semiconductor manufacturing equipment according to 2. 4. The yttrium-aluminum-garnet sintered body as a main constituent phase of the ceramics sintered body, according to any one of claims 1 to 3.
A member for semiconductor manufacturing equipment according to item. 5. A member for a semiconductor manufacturing apparatus used in a semiconductor manufacturing apparatus for processing using a corrosive gas, having a porosity of 10% or less and a surface roughness Ra of 3 to 500 μm.
Which is a yttrium-aluminum-garnet sintered body, wherein the amount of SiO _{2 in} the member is more than 0.15% by weight and 10% by weight or less.