JP3383574B2 - Process management system and focused ion beam device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor process management system for integratedly managing analysis data of process control points or defective points of semiconductor wafers, and a focused ion beam apparatus used in the system.

[0002]

2. Description of the Related Art In recent years, in order to realize high functionality and low cost of semiconductor elements, the area of wafers has been increased and the device structure has been miniaturized. Regarding the increase in the area of wafers, 12-inch wafers are in the process of being examined, instead of the currently mainstream 8-inch wafers. Along with this, the number of chips per wafer has significantly increased, and the price of one wafer has become very expensive. Further, with the miniaturization of the device structure, it has become necessary to accurately control the device dimensions.
For this reason, a scanning electron microscope (Scanning Electron Microscop) for length measurement that measures the pattern width during the process
e: hereinafter, abbreviated as SEM) is introduced, whether the pattern width is within the allowable value is monitored, and the information is fed back to another device to realize stable operation of the process. However, the measurement by the length measurement SEM is limited to the length in the direction parallel to the wafer surface. In device miniaturization, not only the lateral miniaturization but also the vertical miniaturization, that is, the thickness of the film (layer) in the device is also miniaturized, and a method for stably managing this is required. For example, the thickness of an interlayer insulating film of a dynamic random access memory (DRAM) is as thin as several nm, and a device for observing it is required to have a very high resolution.

A conventional technique for measuring the size of a device pattern on a semiconductor wafer is, for example, Japanese Patent Laid-Open No. 3-2.
There is a sample image display device of Japanese Patent No. 91842. Further, as a technique for extracting a desired portion of a semiconductor wafer without breaking the wafer by using a focused ion beam (hereinafter abbreviated as FIB) and transplanting it to another place, JP-A-5-52721. There is a publication “Method for separating sample and method for analyzing separated sample obtained by this method”.

[0004]

To observe a sample with high resolution, a scanning transmission electron microscope (Scanning Trans
ssion Electron Microscope: Hereinafter abbreviated as STEM)
Ultra high resolution scanning electron microscopes are used. Since it is necessary to insert the sample into the lens in each case, it is necessary to cut the sample into small pieces and insert them into the device. For this reason, the device is placed at a place apart from the semiconductor manufacturing line, for example, at an analysis center, and the obtained data is also edited and documented and registered in the database. Since it takes time to prepare a sample and measure it, even if it is intended to feed back the variation information of the device film thickness to the process, a plurality of wafers are already in the process and there is a drawback that timely process control cannot be performed.

It is an object of the present invention to provide a system which realizes stable operation of a semiconductor process by accurately measuring the film thickness of a device in a wafer in a short time, and quickly performing feedback to the process. .

[0006]

According to the present invention, an FIB device capable of separating and extracting a sample from a wafer, S
The object is achieved by combining a TEM, a sample table that can be mounted on both a wafer holder of a FIB device and a sample holder of a STEM, a computer having a database, and a network for interconnecting FIB / STEM / computers to form a system. .

The FIB apparatus used in the present invention comprises a sample stage capable of holding a wafer such as a semiconductor wafer and moving the wafer in at least the XY direction and the tilt direction, a FIB column for irradiating the FIB to a desired position on the wafer, and a probe tip. It consists of a manipulator that can move near the beam irradiation point, a gas supply source that supplies deposition gas near the beam irradiation unit, and a control system that controls them, sampling the device at the pre-registered position of the wafer without breaking the wafer. However, it can be transplanted to a small sample table. After implantation, each analysis point is thin-walled by FIB.

If the small sample holder can be mounted on both the wafer holder of the FIB device and the sample holder of the STEM device, the separated sample can be quickly introduced into the STEM. The sample transferred to the sample table can be identified by the address on the wafer holder and the address on the sample table.
Even after being separated from the wafer, it can be clearly associated with which part of the wafer the sample originally belonged to.

By mounting the sample holder on the sample holder, introducing the sample holder into the STEM and observing the image, a high resolution microscope image of the sample sampled from inside the wafer can be obtained. This ST
It is possible to measure the length of the characteristic portion of the device of interest from the EM image. In addition to the feature of high resolution, the STEM has the feature that the obtained image is easily digitized because the beam is scanned, and the magnification is easily managed. By registering the obtained data in the database via the network, the device length measurement information regarding the analysis points on the wafer can be integratedly managed.

That is, the process control system according to the present invention includes a sample stage that can move while holding a wafer and a sample table that fixes a sample, a FIB column that irradiates a focused ion beam to a desired position on the wafer, and a tip of a probe. Equipped with a manipulator that can move near the beam irradiation point and a gas supply source that supplies deposition gas near the beam irradiation unit, and take out a device or a part of the device at a desired position on the wafer as a sample by focused ion beam processing. Focused ion beam device having a function of fixing to the sample stage, sample stage that can move while holding the sample stage with the sample fixed, electron optical system that scans and irradiates the focused electron beam on the sample, and transmits the sample Equipped with a detector to detect the generated electrons, the electron beam focused on the desired position of the sample fixed on the sample table The scanning transmission electron microscope having the function of measuring the length of the characteristic portion of the sample from the scanning microscope image obtained based on the transmitted electron intensity, the sample taking-out position of the wafer and the sample taken out from the position. It is characterized by including a computer provided with a database capable of managing the analyzed data in association with each other, a focused ion beam device, a scanning transmission electron microscope, and a network connecting the computers to each other. The data obtained by analyzing the analysis place can include a shape (image), dimensions, composition, and the like.

When an identification symbol such as a sample position is provided on the sample table, the sample extraction position of the wafer and the data obtained by the sample measurement by the scanning transmission electron microscope are associated with each other in the database through the identification symbol. It can be carried out. The scanning transmission electron microscope can have a function of outputting statistical information regarding a deviation between the measured length of the characteristic portion and a predetermined value registered in advance. Further, the scanning transmission electron microscope image can be included in the data registered in the database from the scanning transmission electron microscope via the network. The scanning transmission electron microscope is equipped with an X-ray analyzer, and has the function of obtaining sample composition information from the characteristic X-rays generated by electron beam irradiation and registering the sample composition information data in the database via the network. You can also

For a chip on the wafer including a portion taken out by the focused ion beam device, a process unnecessary for a destructive chip, for example, a post-process control device so as to omit a probe test or packaging of the chip which is performed later. It is preferable to instruct. Further, a foreign matter inspection device that detects the position and size of the foreign matter on the wafer is connected to a network, and the focused ion beam device is used to detect the desired position of the wafer by using the address information of the foreign matter supplied from the foreign matter inspection device. It is also possible to take out the device or a part of the device and register the information obtained by the scanning transmission electron microscope in the database.

A focused ion beam apparatus according to the present invention irradiates a sample stage which can be mounted on a sample holder of a scanning transmission electron microscope and a sample stage which can move while holding a wafer, and a focused ion beam to a desired position on the wafer. A FIB column, a manipulator whose tip end is movable near the beam irradiation point, and a gas supply source for supplying a deposition gas near the beam irradiation section, and a device or a part of the device at a desired position on the wafer. Is taken out by the focused ion beam processing and fixed to the sample stage.

According to the present invention, it is possible to measure the film thickness of a fine device in a wafer with high accuracy in a short time, and by feeding it back to the process, stable operation of the process can be realized. The wafer management system of the present invention can be applied not only to management of semiconductor wafers but also to management of wafers using substrates other than semiconductor substrates used for manufacturing magnetic heads having a multilayer film structure.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a system configuration diagram showing a first embodiment of the present invention. FIB device 1, STEM
A computer 3 comprising a device 2 and a database 4 are interconnected via a transceiver 6 and an Ethernet 5.

FIG. 5 shows the configuration of the FIB column 200 of the FIB apparatus 1 and the vicinity of the sample stage. The ions extracted from the liquid metal ion source emitter 100 by the extraction electrode 101 are the condenser lens 102 and the objective lens 10.
It is focused on the wafer (sample) 21 by 9. Variable aperture 103, aligner stigma 104, blanker 105, blanking aperture 10 between both lenses
6, the deflector 108 is arranged. Blanka 105
In operation, the beam impinges on the Faraday cup 107. The wafer 21 is mounted on the sample stage 110 while being held by the wafer holder 20. Sample stage 11
With 0, the wafer holder 20 can be rotated in the X, Y, Z, and XY planes and moved in five axis directions of tilting with respect to the Z axis. A detector 112 for detecting secondary electrons emitted from the sample is provided above the stage, a gas supply source 113 for spraying tungsten hexacarbonyl (W (CO) ₆ ) gas from the tip of the nozzle to the vicinity of the FIB irradiation point, and a manipulator 1
The probe 114 held by 15 is mounted.

FIG. 6 shows the FI used in the embodiment of the present invention.
It is a block diagram of the control system of B device. The high voltage power source 203 applies a high voltage to the ion source and the lens electrode. Aperture control power supply 2
Reference numeral 04 controls the variable aperture 103 so that a desired aperture diameter can be selected. Aligner / stigma control power supply 20
Reference numeral 5 controls the electrode voltage of 8 poles to perform electrical axis alignment and astigmatism correction. The beam current measuring amplifier 206 measures the beam current flowing into the Faraday cup 107 during blanking. The blanking control power supply 207 drives a blanking electrode to perform beam blanking. The deflection amplifier 208 drives the electrostatic deflector 108 having eight poles and two stages. The deflection signal is supplied from the scanner 211. Preamplifier 20
9 converts the signal from the detector 112 into a luminance voltage signal. The converted luminance signal is converted into a digital value and written in the image memory 212. By synchronizing with the scan, a microscopic image of the sample is formed on the memory 212. The stage control power supply 210 is the exhaust control power supply 21.
In tandem with 3, the wafer holder 20 is loaded / unloaded and the stage is moved.

The gas control power source 214 controls heating of the gas supply source 113 and opening / closing of the valve, and W supplied to the sample surface.
(CO) ₆ Controls the amount of gas. Manipulator control power supply 21
Reference numeral 5 controls the tip position of the probe 114. Each control power source is centrally controlled by the FIB control computer 201 via the control bus 202. The information in the image memory 212 can be displayed on the CRT of the computer 201, and image observation, processing positioning, and monitoring during processing can be performed. With this FIB device, a sample block at a desired position in the wafer can be extracted without breaking the wafer. Details of the extraction method are disclosed in JP-A-5-5272.
No. 1 publication.

FIG. 4 is a top view of the wafer holder 20 of the FIB device shown in FIG. The wafer 21 can be held on the wafer holder 20. In addition, the sample table 10 can be mounted on the corner portion of the wafer holder 20. In the illustrated example, there are four mounting places, and identification symbols a, b, c, d are engraved on the upper part of each mounting place.

FIG. 5 shows an example of the detailed shape of the sample table 10. The sample table 10 has a plate shape, and a groove 12 is formed on the upper part thereof. The wafer 21 is placed in the groove 10.
The lower part of the sample block 14 extracted from the above is inserted and mechanically fixed by the tungsten deposition film 15. The FIB processing is further performed with the sample block 14 fixed to the sample table 10 to form the thin wall 16. There is a marking 13 along the groove 12, and if the sample block 14 is fixed with the marking 13 as a mark, the sample can be easily identified. Of course, the sample fixed position can also be recognized by the stage address on the wafer holder.

FIG. 6 shows how the sample table 10 is attached to the sample holder 11 of the STEM 2. STEM
A side-entry type stage is mounted on the stage 2, and the sample stage 10 to which the sample block 14 is fixed is laterally inserted into the stage. in this way,
By using the sample table 10 that can be commonly mounted on the wafer holder 20 of the FIB apparatus 1 and the sample holder 11 of the STEM 2, the sample can be moved between the FIB apparatus and the STEM in a short time, and the sample is dropped or destroyed during the process. The risk of swelling is greatly reduced. Further, the position on the wafer of each sample block cut out by the FIB device and the measurement result of the sample block by the STEM can be accurately and easily associated. Therefore, the STEM measurement results at various analysis points on the wafer can be integratedly managed on the database, and the product yield can be increased by timely process management.

Next, the procedure for measuring the film thickness in the semiconductor wafer by the process management system of the present invention will be described with reference to FIG. 7 which illustrates the procedure for separating the sample from the wafer. (1) The wafer 21 to be measured is mounted on the wafer holder 20 of the FIB device. Further, the sample table 10 is mounted on the wafer holder 20. (2) The wafer holder 20 is loaded on the sample stage 110 of the FIB apparatus 1. (3) Register sample points in the wafer 21. The wafer map is used for registration, and the chip address and the in-chip address are used. (4) Sample stage 110 at the first registered sample point
To move. (5) An area including the processing area of the wafer 21 is raster-scanned by the FIB by the FIB apparatus, and secondary ion generated from the wafer surface is detected to obtain a scanning ion microscope image of the wafer surface, and the sample is separated. And decide the part to be extracted.

(6) FIB5 is applied to the surface of the wafer 21.
Hold the position of the wafer 21 so that 1 is irradiated at a right angle,
The FIB 51 is scanned in a rectangular shape on the wafer 21 to form a square hole 53 having a required depth on the surface of the wafer [FIG. 7 (a)]. (7) The axis of the FIB 51 is about 7 with respect to the surface of the wafer 21.
The wafer 21 is tilted so as to be tilted at 0 °, and the bottom hole 54 is formed [FIG. 7 (b)]. (8) The posture of the wafer 21 is changed, the wafer 21 is installed so that the surface of the wafer 21 becomes perpendicular to the FIB 51 again, and the notch groove 55 is formed [FIG. 7 (c)]. (9) The manipulator 115 is driven to bring the tip of the probe 114 into contact with the surface of the wafer 21 to be extracted [FIG.
(D)]. (10) FIB irradiation is performed while supplying the tungsten hexacarbonyl gas 57 to the contact portion of the probe 114 from the gas nozzle 56 connected to the gas supply source 113, and the deposited film 58 is formed. Separated part of wafer 21 and probe 1 in contact with each other
The tip of 14 is adhered by a deposited film 58 [FIG.
(E)].

(11) The portion where the separated sample 59 and the wafer 21 are connected is cut with the FIB 51, and the wafer 2
Separate the sample 59 from 1. In this state, the separated sample 59 is held at the tip of the probe 114 [FIG.
(F)]. (12) Raise the tip of the probe 114 [FIG. 7 (g)], restore the inclination of the sample stage 110 to the original position, and
Move 0 to move the field of view of the FIB to the sample stage. (13) The manipulator 115 is driven, the separated sample 59 is inserted into the groove 12 on the sample table 10, the sample 59 is fixed by FIB assist deposition, and then the probe 114 and the sample 59 are separated by FIB processing. (14) The above steps are repeated to fix five samples on the sample table 10. (15) The registered sample points are associated with the mounting positions on the sample table 10 and registered in the database 4 via the network 5.

(16) Each sample is further subjected to FIB processing,
Thin wall processing is performed so that the cross section of the film of interest in the sample is exposed. (17) The wafer holder 20 is unloaded from the FIB device 1. (18) Take out the sample table 10 from the wafer holder 20,
It is attached to the tip of the sample holder 11 of the STEM 2. (19) Insert the sample holder 11 into the STEM 2. (20) STEM images of sample cross sections are sequentially observed to measure the film thickness of the film of interest.

(21) Obtained length measurement data and STEM
The image data of the image is transferred to the database 4 via the network 5. At this time, from the sample position on the sample table 11,
At the same time, information for associating which sample point in the wafer 21 the sample corresponds to is also transferred. In the case of the present embodiment, the sub-address is defined on the sample table, such as the address 1 of the sample table a, and the sub-address is associated with the sample point in the wafer 21. This address is also engraved on the wafer holder 20 and the sample table 10 for easy confirmation. (22) The length measurement information sent to the database 4 is judged to be statistically different from the specified value to judge whether or not the process is normally operated.

When data with a large deviation in film thickness is detected, measures such as reviewing the conditions of the related process are taken to realize stable operation of the process. In the present embodiment, the statistical processing of the obtained length measurement data is performed on the database side, but it is also possible to incorporate the function in the STEM itself. In the procedures (13) to (17) on the FIB device side and the procedures (18) to (21) on the STEM side, an example of a method of associating the measurement sample with the sample points in the wafer 21 will be described in detail. explain.

Now, as shown in FIG. 4, in the sample holder mounting place of the wafer holder 20, as the column identifiers a, b,
It is assumed that the markings c and d are given. In addition, the sample table 10
It is assumed that the sample mounting locations are marked with 1, 2, 3, 4, 5 as row identifiers as shown in FIG. Since these markings can be confirmed in the SIM image on the FIB device side, for example, to move the position of column b, row 3 of the sample stage to the FIB optical axis, first move the sample stage 110 in the column direction to move the identifier "b". ", And in that state, the sample stage 110 is moved in the row direction to search for the identifier" 3 ". By this method, it is possible to move to an arbitrary sample mounting place.

Further, the position of the column and the row can be associated with the specific address on the wafer holder 20 as shown in Table 1 below without moving the place while confirming the identifier on the SIM image. By selecting an address (matrix) on the address selection screen 300 of the FIB device shown, the stage can be moved to the corresponding position.

[0030]

[Table 1]

When the sample cut out from the wafer is fixed to the sample table 10, the address (matrix) on the sample table to which the sample is fixed can be manually selected arbitrarily.
1, a2, ..., A5, b1, b2, .. The location can be automatically designated on the system side. Figure 8
In the example shown in, the manual side is selected by the mode selection radio button 302. Then, the "b3" button of the address selection buttons 303 representing the addresses (matrix) a1, a2, ..., D4, d5 to be selected is pressed. The selected address “b3” is displayed on the selected address display section 301. By this selection, the separated sample extracted from the wafer is fixed at the position indicated by the identifier "3" of the sample stage mounted at the position of the identifier "b" on the wafer holder 20. At the time when the sample is fixed on the sample table 10, the on-wafer address of the sample (information about where on the wafer the sample originally was) and the sample table address (matrix) are associated with each other, and the computer 3 is connected to the computer 3 via the network 5. It is sent and registered in the database 4.

Next, the operator sets the wafer holder 20 to FI.
The sample table 10 is taken out from the B-apparatus 1, mounted on the STEM side-entry sample holder 11, and introduced into the STEM 2. Before starting the observation (analysis), the sample table address is specified and the sample table address to which the sample to be observed corresponds is registered. For example, when measuring a sample on the sample stage at the position indicated by the identifier “b” on the wafer holder 20 with the STEM, the identifier is, for example, b1, in the order of measurement from the input part of the STEM.
Input like b2, b3, b4, b5. Then S
The secondary electron image observing function of the TEM 2 is used to search for a corresponding sample by using the markings on the sample table 10 as a mark and sequentially observe. Further, by registering the address of the side entry stage of the STEM and the row information of the sample table 10 in advance in association with each other, it is possible to automatically move the stage to the corresponding position by designating the sample table address. .

The analysis information obtained by STEM is sent to the computer 3 via the network 5. The computer 3 uses the information sent from the FIB device 1 and the STEM 2 to
The sample table address (matrix) is used as an intermediary, and the database 4 stores the STE corresponding to the wafer address of the sample.
The analysis data of M is registered. Here, an example is described in which the sample fixing position (sample table address) on the sample table 10 is designated by combining two types of identifiers, an identifier provided on the wafer holder and an identifier provided on the sample table.
However, the method of designating the sample fixed position on the sample table is not limited to this method. For example, a1, a at the sample fixing place
2, ... a5, b, b
Sample stands c1, c with identification symbols 2, 5, ...
Omitting the identifier on the wafer holder by using a plurality of sample stands that have different identification marks (sample stand addresses) stamped on the sample fixing position, such as a sample stand on which the identification symbols 2, ..., c5 are stamped. You may.

On the FIB device side, the sample sampled from within the wafer and the fixed position on the sample table are associated with each other by this identification symbol, and the corresponding relationship is sent to the computer 3 via the network 5 and registered in the database 4.
On the other hand, on the STEM side, when measuring the sample fixed to the sample holder 11, the identification symbol provided at the fixed position of the sample is read using the secondary electron image observation function, and the measurement data and the identification symbol (sample table address) are read. And send them to the computer 3. The computer 3 associates the sample extraction position in the wafer with the sample data through the identification symbol and records it in the database 4.

Since the chip including the sample extraction point in the wafer is functionally destroyed and is eventually discarded,
There is no need for a probe test or packaging performed in a later process. The database has a function of notifying the post-process of the information on the chip that has been extracted, and can prevent unnecessary work from occurring in the post-process. Further, in the present embodiment, the chip that can be finally made into a product is the inspection chip, but it is also possible to manage the process by providing a region dedicated to the monitor on the wafer, extracting the region, and examining the film thickness. it can. In this case, it is necessary to form a dedicated pattern in the wafer, but since the product chips are not destroyed, the yield is improved.

The integrated management of analysis information as a database has the following advantages. (1) Process variation factors because not only single product analysis results (for example, film thickness deviation) but also multi-faceted analysis such as deviation for each manufacturing lot, maximum deviation within a wafer, and temporal change rate of deviation can be performed. Is easy to analyze. (2) When an analysis result with a process problem appears, it is possible to search whether there was a similar or similar analysis result in the past, and it is possible to effectively use the past analysis result to detect the process variation factor early. .

FIG. 9 is a system configuration diagram showing a second embodiment of the present invention. The difference from the first embodiment is that
The use of high resolution SEM7 instead of STEM. The high resolution SEM 7 has a side entry stage. Therefore, sample handling similar to STEM becomes possible. Also, when using SEM, FI
One section may be finished by the B-apparatus 1. High resolution SEM
Has a resolution lower than that of STEM, but has the advantage of being easy and easy to use, and is suitable for performing process control of a portion having a relatively large film thickness.

A system using a transmission electron microscope (hereinafter abbreviated as TEM) instead of the STEM or SEM is also possible.
TEM generally forms an image of a transmission electron beam of a sample on a fluorescent plate and photographs it (prints it on a film and then develops it), but with the recent development of imaging technology, a TEM image is directly displayed on an image display device such as a CRT. Can be displayed. Therefore, it is possible to add the image pickup / image display system to the conventional TEM and use the present invention.

FIG. 10 is a system configuration diagram of an embodiment in which a foreign matter inspection device 8 for rapidly detecting the position and size of a foreign matter on a wafer is connected. In process control, it is important to control whether or not the film thickness is within the specified value as described above, but in addition, it is also important to analyze foreign matter that causes problems in the process. . By investigating the shape and composition of the foreign matter in detail, the cause of the defect can be determined. Information on the position and size of the foreign matter detected by the foreign matter inspection device 8 such as the laser light scattering method is provided by the network 5.
Is registered in the database 4 via. By selecting the foreign matter that needs to be investigated from this information and transferring the address on the wafer to the FIB device 1, the cross-section ST of the foreign matter is selected.
EM observation becomes possible.

Further, as described above, in the system of the present invention, even though the sample is separated from the wafer, the correspondence with the database is always taken.
There is an advantage that the information obtained by M can be registered in the database quickly and surely. In this embodiment, the X-ray analyzer 9 is attached to the STEM. As a result, the composition of defects can be analyzed, and the raw data of X-ray analysis can be registered in the database. The registration of raw data is very effective for later data evaluation from different perspectives. Moreover, these operations could be performed in the clean room in a short time.

Among the foreign substances detected by the foreign substance inspection device 8, those having a relatively large particle size of about 10 μm were selected. The foreign matter address was sent to the FIB device 1, and the sample block including the foreign matter portion was extracted from the inside of the wafer and fixed to the sample table. When the sample stage was attached to a STEM and X-ray analysis was performed, it was found that the composition of the foreign matter contained iron, nickel, and chromium, and that the particles were stainless particles. Based on this analysis result, it was possible to suppress the generation of foreign matter by changing the stainless steel movable parts used in the previous step to those that do not generate dust.

[0042]

As described above, according to the present invention, a fine film thickness in a wafer can be measured at high speed and with high precision, so that a process such as a semiconductor process can be stabilized.

[Brief description of drawings]

FIG. 1 is a system configuration diagram showing a first embodiment of the present invention.

FIG. 2 is a schematic configuration diagram around a column of an example of a FIB device according to the present invention.

3 is a block diagram of a control system of the FIB device shown in FIG.

FIG. 4 is an explanatory view of a wafer holder.

FIG. 5 is an explanatory diagram of a sample table.

FIG. 6 is an explanatory view of a side entry type holder.

FIG. 7 is an explanatory diagram of a procedure for separating a sample from a wafer.

FIG. 8 is a schematic diagram of an address selection screen.

FIG. 9 is a system configuration diagram showing a second embodiment of the present invention.

FIG. 10 is a system configuration diagram showing a third embodiment of the present invention.

[Explanation of symbols]

1 ... FIB device, 2 ... STEM, 3 ... computer, 4
… Database, 5… Ethernet (communication cable),
6 ... Transceiver, 7 ... High resolution SEM, 8 ... Foreign matter inspection device, 9 ... X-ray detector, 10 ... Sample stage, 11 ... Sample holder, 12 ... Groove, 13 ... Mark, 14 ... Sample (separated sample),
15 ... deposition film, 16 ... thin wall (TEM observation part),
20 ... Wafer holder, 21 ... Wafer, 22 ... Stamp, 51
... Focused ion beam, 53 ... Square hole, 54 ... Bottom hole, 55 ...
Notch groove, 56 ... Gas nozzle, 57 ... Gas, 58 ... Deposited film, 59 ... Separation sample, 100 ... Emitter, 101 ... Extraction electrode, 102 ... Condenser lens, 103 ... Variable aperture, 104 ... Aligner stigma, 105 ... Blanker , 106 ... Blanking aperture, 107 ... Faraday cup, 108 ... Deflector, 109 ... Objective lens, 110 ... Sample stage, 112 ... Detector, 113
… Gas source, 114… Probe, 115… Manipulator, 2
00 ... FIB column, 201 ... computer, 202 ...
Control bus, 203 ... High-voltage power supply, 204 ... Aperture control power supply,
205 ... Aligner / stigma control power supply, 206 ... Beam current measurement amplifier, 207 ... Blanking control power supply, 2
08 ... Deflection amplifier, 209 ... Preamplifier, 210 ... Stage control power supply, 211 ... Scanner, 212 ... Image memory, 213 ... Exhaust control power supply, 214 ... Gas control power supply, 2
15 ... Manipulator control power source, 300 ... Address selection screen, 301 ... Selected address display area, 302 ... Mode selection radio button, 303 ... Address selection button

Front page continued (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01J 37/305 H01J 37/28 G01B 21/30

Claims (8)

(57) [Claims] 1. A sample stage that can move while holding a wafer and a sample table that fixes a sample, a FIB column that irradiates a focused ion beam to a desired position on the wafer, and a tip of a probe can move near the beam irradiation point. It has a manipulator and a gas supply source that supplies a deposition gas near the beam irradiation unit, and has the function of taking out a device or a part of the device at a desired position on the wafer as a sample by focused ion beam processing and fixing it to the sample stage. Focused ion beam device having, a sample stage that can move while holding the sample table on which the sample is fixed, an electron optical system that scans and irradiates a focused electron beam on the sample, and a detector that detects electrons transmitted through the sample The electron beam focused on a desired position of the sample fixed on the sample table is scanned, and the electron beam obtained based on the transmitted electron intensity is obtained. It is possible to manage the scanning transmission electron microscope having a function of measuring the length of the characteristic portion of the sample from the scanning microscope image, the sample extraction position of the wafer, and the data obtained by analyzing the sample extracted from the position in association with each other. A process management system comprising: a computer having a database; and a focused ion beam device, a scanning transmission electron microscope, and a network interconnecting the computers. 2. The process management system according to claim 1, wherein the sample table is provided with an identification symbol, and the sample extraction position in the wafer and the scanning transmission electron microscope are used in the database through the identification symbol. A process management system characterized by being associated with data obtained by sample measurement. 3. The process management system according to claim 1, wherein the scanning transmission electron microscope has a function of outputting statistical information regarding a deviation between the measured length of the characteristic portion and a predetermined value registered in advance. A process management system characterized by the following. 4. The process management system according to claim 1, wherein the data registered from the scanning transmission electron microscope to the database via the network includes a scanning transmission electron microscope image. system. 5. The process control system according to claim 1, wherein the scanning transmission electron microscope is equipped with an X-ray analyzer, obtains composition information of a sample from characteristic X-rays generated by electron beam irradiation, and connects the network. A process management system having a function of registering composition information data of a sample in the database via the above. 6. The process control system according to claim 1, wherein a post-process control is performed for a chip on a wafer including a portion taken out by the focused ion beam device so as to omit a process unnecessary for a destructive chip. A process management system characterized by instructing a device. 7. The process management system according to claim 1, wherein a particle inspection device for detecting particles on a wafer is connected to the network, and the focusing is performed by using address information of particles supplied from the particle inspection device. A process management system characterized in that a device or a part of a device at a desired position on a wafer is taken out by an ion beam device, and information obtained by the scanning transmission electron microscope is registered in the database. 8. A sample stage that can be mounted on a sample holder of a scanning transmission electron microscope and a sample stage that can move while holding a wafer, a FIB column that irradiates a desired position on the wafer with a focused ion beam, and a probe tip. The part is equipped with a manipulator that can move near the beam irradiation point, and a gas supply source that supplies deposition gas near the beam irradiation part, and the device or part of the device at the desired position on the wafer is extracted by focused ion beam processing. A focused ion beam device having a function of fixing the sample to the sample stage.