JP3006266B2 - Solar cell element - Google Patents
Solar cell elementInfo
- Publication number
- JP3006266B2 JP3006266B2 JP4051884A JP5188492A JP3006266B2 JP 3006266 B2 JP3006266 B2 JP 3006266B2 JP 4051884 A JP4051884 A JP 4051884A JP 5188492 A JP5188492 A JP 5188492A JP 3006266 B2 JP3006266 B2 JP 3006266B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- light
- silicon substrate
- cell element
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 239000000969 carrier Substances 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 description 15
- 229910010413 TiO 2 Inorganic materials 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Description
【０００１】[0001]
【産業上の利用分野】本発明は、太陽光の入射により所
定の電圧を発生するシリコン系の太陽電池素子に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon solar cell element which generates a predetermined voltage when sunlight is incident.
【０００２】[0002]
【従来の技術】従来より、各種の太陽電池素子が知られ
ており、一般にはｐ領域とｎ領域からなる結晶シリコン
基板を用い、入射する光によって生成された正キャリア
（正孔）および負キャリア（電子）がｐ領域およびｎ領
域に分離して集まることを利用している。2. Description of the Related Art Conventionally, various types of solar cell devices have been known. Generally, a crystalline silicon substrate comprising a p region and an n region is used, and positive carriers (holes) and negative carriers generated by incident light. The fact that (electrons) are gathered separately in the p region and the n region is used.
【０００３】このような、シリコン太陽電池素子におい
て、入射光の光エネルギーを電気エネルギーに変換する
変換効率を上昇するためには、ｐ領域、ｎ領域に分離生
成されたキャリアを効率よく取り出すことが必要であ
り、このためには電池を薄型化することが好適である。
また、薄型化することによって、太陽電池素子を低コス
ト化することもできる。[0003] In such a silicon solar cell element, in order to increase the conversion efficiency of converting light energy of incident light into electric energy, it is necessary to efficiently extract carriers generated separately in the p region and the n region. It is necessary, and for this purpose, it is preferable to reduce the thickness of the battery.
Further, by reducing the thickness, the cost of the solar cell element can be reduced.
【０００４】ところが、素子を薄型化すると、シリコン
基板における吸収係数の小さな長波長側可視光線〜赤外
線の光吸収量が減少し、十分な出力を得られないという
問題点があった。However, when the element is made thinner, the amount of light absorption of visible light to infrared rays on the long wavelength side having a small absorption coefficient in the silicon substrate is reduced, and there is a problem that a sufficient output cannot be obtained.
【０００５】そこで、この対策法の１つとして、太陽電
池素子の裏面に金属反射膜を設けることが提案されてい
る。すなわち、雑誌「日経マイクロデバイス １９９０
年４月発行」、「日経ニューマテリアル １９９０年１
０月発行」には、素子の裏面電極を金属反射膜として利
用し、入射光が裏面から透過するのを抑制して、入射光
を素子中に閉じ込め、薄型にもかかわらず入射光の吸収
効率を上昇することが示されている。このように、従来
の太陽電池素子においても、各種の改良がなされ、変換
効率の上昇が図られている。Therefore, as one of the countermeasures, it has been proposed to provide a metal reflection film on the back surface of the solar cell element. That is, the magazine “Nikkei Micro Device 1990
Published in April, 1990 "," Nikkei New Materials, 1990/1
Published in "October", the back electrode of the device is used as a metal reflective film to suppress the transmission of incident light from the back surface and confine the incident light in the device. Has been shown to rise. Thus, various improvements have been made in the conventional solar cell element, and the conversion efficiency has been increased.
【０００６】[0006]
【発明が解決しようとする課題】しかし、上記従来例の
太陽電池素子においては、入射光を素子内に閉じ込める
ため、素子内において電気エネルギーに変換されない入
射光も増加する。そして、電気エネルギーに変換されな
い入射光は熱エネルギーに変換されるため、これによっ
て素子の温度が上昇してしまう。シリコン系の太陽電池
素子におけるエネルギー変換効率と温度には、図４に示
すような関係があり、エネルギー変換効率は、温度の上
昇に伴い悪化する。すなわち、温度上昇に伴い、開放電
圧（Ｖ）、最大出力（Ｗ）とも直線的に悪化する。そし
て、電気エネルギーに変換されない部分は熱エネルギー
になるため、基板の温度はさらに上昇することになる。However, in the above-mentioned conventional solar cell device, incident light which is not converted into electric energy in the device increases because the incident light is confined in the device. Then, the incident light that is not converted into electric energy is converted into heat energy, so that the temperature of the element increases. The energy conversion efficiency and the temperature in a silicon-based solar cell element have a relationship as shown in FIG. 4, and the energy conversion efficiency deteriorates as the temperature increases. That is, as the temperature rises, both the open-circuit voltage (V) and the maximum output (W) decrease linearly. Then, a portion that is not converted into electric energy becomes heat energy, and thus the temperature of the substrate further increases.
【０００７】このように、従来の素子においては、使用
時に素子温度が上昇してしまうために、入射光から電気
エネルギーへの変換効率が悪化するという問題点があっ
た。本発明は、上記課題に鑑みなされたものであり、素
子温度の上昇を抑制して、エネルギー変換効率の改善さ
れた太陽電池素子を提供することを目的とする。As described above, the conventional device has a problem that the conversion efficiency from incident light to electric energy is deteriorated because the device temperature rises during use. The present invention has been made in view of the above problems, and has as its object to provide a solar cell element having improved energy conversion efficiency by suppressing an increase in element temperature.
【０００８】ここで、本発明は、次のような知見よりな
されたものである。すなわち、太陽電池素子において、
遠赤外光はそのエネルギーレベル（ｈν：ｈはプランク
定数、νは光の振動数）が小さいため、キャリアの生成
に寄与できない（太陽電池素子は、通常の場合、波長が
４００〜１０００ｎｍの光を効率よく電気エネルギーに
変換する）。そこで、遠赤外光を裏面より透過させ、こ
の遠赤外光に起因する温度上昇を抑制することを考え、
本発明を完成するに至った。The present invention has been made based on the following findings. That is, in the solar cell element,
Far-infrared light cannot contribute to carrier generation because its energy level (hν: h is Planck's constant, ν is the light frequency) is small. (In general, a solar cell element has a wavelength of 400 to 1000 nm. To efficiently convert it to electrical energy). Therefore, we considered transmitting far-infrared light from the back surface and suppressing the temperature rise caused by this far-infrared light.
The present invention has been completed.
【０００９】[0009]
【課題を解決するための手段】本発明は、ｐ領域および
ｎ領域を有する結晶シリコン基板への光入射による正負
キャリアの生成を利用した太陽電池素子であって、前記
シリコン基板のｐ領域側の表面に接続された第１の電極
と、前記シリコン基板のｎ領域側の表面に設けられた第
２の電極と、前記シリコン基板の裏面側を覆うように形
成され、表面側から入射しシリコン基板を透過してきた
光の中の近赤外線を選択的に反射し、遠赤外線を透過さ
せる多層反射膜と、を有することを特徴とする。SUMMARY OF THE INVENTION The present invention relates to a solar cell device utilizing the generation of positive and negative carriers by light incidence on a crystalline silicon substrate having a p region and an n region. A first electrode connected to the front surface, a second electrode provided on the surface of the silicon substrate on the n-region side, and a silicon substrate formed to cover the back surface of the silicon substrate, Selectively reflects near-infrared light in light that has passed through, and transmits far-infrared light.
And a multi-layer reflective film.
【００１０】[0010]
【作用】このように、本発明においては、近赤外光を選
択的に反射する多層膜を裏面に有している。このため、
遠赤外光は裏面から透過し、電気エネルギーに変換しや
すい近赤外以下の波長の入射光は素子内に閉じ込められ
る。従って、太陽電池素子を薄型としながら、所望の波
長範囲の入射光のみの吸収効率を上昇できる。そこで、
使用時における温度上昇を防止しながら入射する光エネ
ルギーの電気エネルギーへの変換効率を上昇できる。As described above, in the present invention, the back surface has a multilayer film for selectively reflecting near-infrared light. For this reason,
Far-infrared light is transmitted through the back surface, and incident light having a wavelength of near-infrared or less that is easily converted into electric energy is confined in the device. Therefore, it is possible to increase the absorption efficiency of only incident light in a desired wavelength range while making the solar cell element thin. Therefore,
The conversion efficiency of incident light energy to electric energy can be increased while preventing a temperature rise during use.
【００１１】[0011]
【実施例】以下、本発明の実施例について、図面に基づ
いて説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１２】基本構成 図１は、本発明に係る太陽電池素子の基本的な構成を示
す図である。Ｂ（硼素）が低濃度で拡散されたｐ型のシ
リコン基板１０の上部には、Ｐ（燐）が拡散されたｎ+
型層１０ａが形成され、下部には不純物の拡散によりキ
ャリア濃度の上昇されたｐ+ 型層１０ｂが形成され、中
間部のｐ型の本体１０ｃが形成されている。そして、ｎ
+ 型層１０ａの上側には、例えばＡｌ（アルミ）により
形成されたくし型の受光面電極１２及び反射防止膜１４
が形成されている。一方、シリコン基板１０の裏面側に
は、ｐ+ 型層１０ｂに接触して、同じくくし型の裏面電
極１６が形成されている。 Basic Configuration FIG. 1 is a diagram showing a basic configuration of a solar cell element according to the present invention. On the p-type silicon substrate 10 in which B (boron) is diffused at a low concentration, n + in which P (phosphorus) is diffused is provided.
A mold layer 10a is formed, a p + -type layer 10b whose carrier concentration is increased by diffusion of impurities is formed below, and a p-type main body 10c in an intermediate portion is formed. And n
Above the + type layer 10a, a comb-shaped light receiving surface electrode 12 and an antireflection film 14 formed of, for example, Al (aluminum) are formed.
Are formed. On the other hand, a comb-shaped back electrode 16 is formed on the back surface of the silicon substrate 10 in contact with the p + -type layer 10b.
【００１３】そして、このシリコン基板１０の裏面側に
は、多層選択反射膜２０が積層形成されている。この多
層選択反射膜２０は、４層の高屈折率層２０ａと３層の
低屈折率層２０ｂを交互に積層したものである。On the back side of the silicon substrate 10, a multilayer selective reflection film 20 is formed. The multilayer selective reflection film 20 is obtained by alternately stacking four high refractive index layers 20a and three low refractive index layers 20b.
【００１４】また、本実施例では、シリコン基板１０は
厚さ３００〜４００μｍである。そして、多層選択反射
膜２０は、高屈折率層２０ａが最もシリコン基板１０に
近い場所に形成され、その後低屈折率層２０ｂ高屈折率
層２０ａが繰り返されるように形成されている。ここ
で、各高屈折率層２０ａ、低屈折率層２０ｂは、その厚
さが反射すべき光の中心波長λに対し、ほぼλ／４とな
るように形成されている。In the present embodiment, the silicon substrate 10 has a thickness of 300 to 400 μm. The multilayer selective reflection film 20 is formed such that the high refractive index layer 20a is formed closest to the silicon substrate 10, and then the low refractive index layer 20b and the high refractive index layer 20a are repeated. Here, each of the high-refractive-index layers 20a and the low-refractive-index layers 20b is formed such that its thickness is approximately λ / 4 with respect to the central wavelength λ of the light to be reflected.
【００１５】このような太陽電池素子において、表面側
から入射した光は、反射防止膜１４、ｎ+ 型１０ａを透
過しシリコン基板の本体１０ｃに至る。ここで、シリコ
ン基板１０の厚さが１００μｍ程度と通常使用される３
００〜４００μｍに比べて薄い場合には、シリコン基板
１０における吸収係数の波長依存性に起因して、波長９
００ｎｍ以下の光はシリコン基板１０内で吸収される
が、波長９００ｎｍ以上の光はシリコン基板１０から透
過し易くなる。In such a solar cell element, light incident from the front side passes through the antireflection film 14, the n + type 10a and reaches the main body 10c of the silicon substrate. Here, the thickness of the silicon substrate 10 is about 100 μm,
When the thickness is smaller than 100 to 400 μm, the wavelength 9
Light having a wavelength of 900 nm or less is absorbed in the silicon substrate 10, but light having a wavelength of 900 nm or more is easily transmitted from the silicon substrate 10.
【００１６】ところが、本実施例においては、裏面側
に、多層選択反射膜２０が形成されている。そして、こ
の多層選択反射膜２０は、中心波長９００ｎｍ程度の光
を選択的に反射するため、そのままでは透過してしまう
波長９００ｎｍ以上の光をシリコン基板１０内に反射さ
せることが可能となる。このため、シリコン基板１０内
における入射光の吸収が改善され、これによって太陽電
池素子における発電量の増加、すなわち光電変換効率が
向上する。However, in this embodiment, the multilayer selective reflection film 20 is formed on the back surface side. Since the multilayer selective reflection film 20 selectively reflects light having a center wavelength of about 900 nm, light having a wavelength of 900 nm or more that can be transmitted as it is can be reflected in the silicon substrate 10. For this reason, the absorption of the incident light in the silicon substrate 10 is improved, whereby the amount of power generation in the solar cell element is increased, that is, the photoelectric conversion efficiency is improved.
【００１７】ここで、図２に本実施例における多層選択
反射膜２０の反射特性を示す。この多層選択反射膜２０
は、１０００ｎｍ±２００ｎｍの範囲で反射率が増加す
るように形成されており、図に示すように波長が１２０
０ｎｍを超えた領域において反射率が非常に小さくなっ
ている。FIG. 2 shows the reflection characteristics of the multilayer selective reflection film 20 in this embodiment. This multilayer selective reflection film 20
Is formed so that the reflectance increases in the range of 1000 nm ± 200 nm, and the wavelength is 120 nm as shown in FIG.
The reflectivity is very small in the region exceeding 0 nm.
【００１８】一方、結晶系シリコン太陽電池素子の光電
変換の効率は、入射光の波長が９００ｎｍを超えたあた
りから減少し、１２００ｎｍ以上では非常に小さくな
る。従って、１２００ｎｍ以上の光は、シリコン基板１
０の内部に吸収されても、発電に寄与する割合は小さ
く、ほとんどは熱エネルギーに変換され、太陽電池素子
の温度上昇を招く。しかしながら、本実施例によれば、
１２００ｎｍ以上の光は、多層選択反射膜２０を透過す
る割合が大きいため、このような遠赤外の光により、太
陽電池素子の温度上昇を招くことを防止することができ
る。On the other hand, the efficiency of photoelectric conversion of the crystalline silicon solar cell element decreases when the wavelength of the incident light exceeds 900 nm, and becomes extremely small when the wavelength is 1200 nm or more. Therefore, light of 1200 nm or more is emitted from the silicon substrate 1.
Even if it is absorbed inside 0, the proportion contributing to power generation is small, and most of it is converted to heat energy, which causes a rise in the temperature of the solar cell element. However, according to this embodiment,
Since light having a wavelength of 1200 nm or more passes through the multilayer selective reflection film 20, a large increase in the temperature of the solar cell element due to such far-infrared light can be prevented.
【００１９】このように、本実施例によれば、光電変換
に有効な波長領域の光を選択的に素子内部に閉じ込め、
温度上昇を招く波長領域の光を透過させることができ
る。そこで、長時間使用（特に気温の高い夏期）におい
て、安定して高い光電変換効率を有する太陽電池素子が
得られる。As described above, according to the present embodiment, light in a wavelength region effective for photoelectric conversion is selectively confined inside the element,
Light in a wavelength region that causes a temperature rise can be transmitted. Thus, a solar cell element having a stable and high photoelectric conversion efficiency can be obtained for a long time use (particularly in the summertime when the temperature is high).
【００２０】実施例１ まず、Ｂがドーピングされた厚さ約１００μｍのｐ型の
Ｓｉ単結晶からなるシリコン基板１０を用意し、拡散法
によりＰ（燐）を拡散し、受光面側に接合深さ約０．５
μのｎ+ 層を形成する。次に、イオン注入法によりシリ
コン基板１０の裏面側にＢを注入し、接合深さ約１．０
μｍのｐ+ 層１０ｂを形成する。 Embodiment 1 First, a silicon substrate 10 made of a p-type Si single crystal doped with B and having a thickness of about 100 μm is prepared, and P (phosphorus) is diffused by a diffusion method. About 0.5
An n + layer of μ is formed. Next, B is implanted into the back surface of the silicon substrate 10 by an ion implantation method, and a junction depth of about 1.0
A μm p + layer 10b is formed.
【００２１】次に、多層選択反射膜２０を次の手順で形
成する。ここで、この多層選択反射膜２０の形成には、
スパッタ装置を用いる。また、このスパッタ装置は、本
実施例における反射防止膜１４の形成にも使用される。Next, the multilayer selective reflection film 20 is formed in the following procedure. Here, the formation of the multilayer selective reflection film 20 includes:
A sputtering device is used. This sputtering apparatus is also used for forming the antireflection film 14 in the present embodiment.
【００２２】まず、第１層として、高屈折率層２０ａを
形成する。この高屈折率層２０ａは、屈折率２．４９程
度のＴｉＯ2 によって形成し、その膜厚は、約９５ｎｍ
程度とする。次に、第２層として低屈折率層２０ｂを形
成する。この低屈折率層２０ｂには、屈折率１．４５程
度のＳｉＯ2 を用い、その膜厚は約１６４μｍとする。
そして、この高屈折率層２０ａ、低屈折率層２０ｂを交
互に順次積層形成し、ＴｉＯ2 ／ＳｉＯ2 ／ＴｉＯ2 ／
ＳｉＯ2 ／ＴｉＯ2 ／ＳｉＯ2 ／ＴｉＯ2 と、高屈折率
層４層、低屈折率層３層からなる多層選択反射膜２０を
形成した。次に、受光面の反射防止膜１４及び裏面の多
層選択反射膜２０における受光面電極１２及び裏面電極
１６を形成する部分をエッチングにより除去し、スクリ
ーン印刷法によりＡｌペーストを印刷後焼成し、受光面
電極１２及び裏面電極１６を形成した。なお、受光面電
極１２及び裏面電極１６共くし形のものとした。このよ
うにして、実施例１の太陽電池素子が形成された。First, a high refractive index layer 20a is formed as a first layer. The high refractive index layer 20a is formed of TiO 2 having a refractive index of about 2.49, and has a thickness of about 95 nm.
Degree. Next, a low refractive index layer 20b is formed as a second layer. The low refractive index layer 20b is made of SiO 2 having a refractive index of about 1.45, and has a thickness of about 164 μm.
Then, the high-refractive-index layers 20a and the low-refractive-index layers 20b are alternately and sequentially laminated to form TiO 2 / SiO 2 / TiO 2 /
A multilayer selective reflection film 20 composed of SiO 2 / TiO 2 / SiO 2 / TiO 2 and four high refractive index layers and three low refractive index layers was formed. Next, portions of the anti-reflection film 14 on the light-receiving surface and the multilayer selective reflection film 20 on the back surface where the light-receiving surface electrode 12 and the back surface electrode 16 are to be formed are removed by etching. The surface electrode 12 and the back surface electrode 16 were formed. The light receiving surface electrode 12 and the back surface electrode 16 were both comb-shaped. Thus, the solar cell element of Example 1 was formed.
【００２３】実施例２ 実施例１と同様の方法により、厚さ約１００μｍのｐ型
のＳｉ単結晶からなるシリコン基板１０にｎ+ 型層１０
ａ及びｐ+ 型層１０ｂを形成した。続いて、多層選択反
射膜２０を実施例１と同様の方法で、高屈折率層２０ａ
および低屈折率層２０ｂを形成した。ここで、実施例２
においては、高屈折率層２０ａとして、実施例１と同様
に屈折率２．４９程度のＴｉＯ2 を用い、約９５ｎｍの
膜を形成したが、低屈折率層２０ｂとして、屈折率１．
８程度のＭｇＦ2 を用い、この膜厚を約１７２ｎｍとし
た。そして、これら高屈折率層２０ａと低屈折率層２０
ｂを、ＴｉＯ2 ／ＭｇＦ2 ／ＴｉＯ2 … ＭｇＦ2 ／
ＴｉＯ2 のように、高屈折率層５層、低屈折率層４層か
らなる計９層の多層選択反射膜２０を形成した。そし
て、第１実施例と同様の方法で、受光面電極１２及び裏
面電極１６を形成し、実施例２の太陽電池素子を形成し
た。 Embodiment 2 An n + -type layer 10 is formed on a silicon substrate 10 made of p-type Si single crystal and having a thickness of about 100 μm in the same manner as in Embodiment 1.
The a and p + type layers 10b were formed. Subsequently, the multilayer selective reflection film 20 is formed in the same manner as in the first embodiment by using the high refractive index layer 20a.
And a low refractive index layer 20b. Here, Example 2
In, a film of about 95 nm was formed using TiO 2 having a refractive index of about 2.49 in the same manner as in Example 1 as the high refractive index layer 20a.
About 8 MgF 2 was used, and the film thickness was about 172 nm. The high refractive index layer 20a and the low refractive index layer 20
the b, TiO 2 / MgF 2 / TiO 2 ... MgF 2 /
Like the case of TiO 2 , a multilayer selective reflection film 20 having a total of nine layers including five high refractive index layers and four low refractive index layers was formed. Then, the light receiving surface electrode 12 and the back surface electrode 16 were formed in the same manner as in the first embodiment, and the solar cell element of the second embodiment was formed.
【００２４】実施例３ 実施例１と同様の方法で、厚さ約１５０μｍのｐ型の多
結晶Ｓｉからなるシリコン基板１０に、ｎ+ 型層１０ａ
及びｐ+ 型層１０ｂを形成した。続いて、実施例１と同
様のＴｉＯ2 からなる高屈折率層２０ａと、ＳｉＯ2 か
らなる低屈折率層２０ｂからなる７層の多層選択反射膜
２０を形成し、その後受光面電極１２及び裏面電極１６
を形成し、第３実施例の太陽電池素子を形成した。 Embodiment 3 In the same manner as in Embodiment 1, an n + -type layer 10a is formed on a silicon substrate 10 made of p-type polycrystalline Si having a thickness of about 150 μm.
And ap + -type layer 10b was formed. Subsequently, a seven-layer multi-layer selective reflection film 20 composed of a high-refractive-index layer 20a made of TiO 2 and a low-refractive-index layer 20b made of SiO 2 is formed as in Example 1, and then the light-receiving surface electrode 12 and the back surface are formed. Electrode 16
Was formed, and the solar cell element of the third example was formed.
【００２５】各実施例における素子構成 ここで、表１に、上述した実施例１〜３における素子構
成をまとめて示す。 Element Configuration in Each Example Here, Table 1 summarizes the element configurations in Examples 1 to 3 described above.
【００２６】[0026]
【表１】 各実施例における裏面の反射特性 次に、表２に、各実施例の裏面の反射率をまとめて示
す。[Table 1] Reflection characteristics of the rear surface in each of Examples in Table 2, summarizes the reflectance of the back surface of each of the examples.
【００２７】[0027]
【表２】 このように、今回の実施例１〜３においては、特に実施
例２の多層選択反射膜２０の構成の裏面反射率が波長８
００〜１２００ｎｍの光に対して９６％、１２００〜２
０００ｎｍの光に対して１９％と、非常に良い選択反射
特性を有することがわかった。[Table 2] As described above, in the present first to third embodiments, the back surface reflectance of the configuration of the multilayer selective reflection film 20 of the second embodiment is particularly 8 wavelengths.
96% for light of 100 to 1200 nm, 1200 to 2
It was found that the light had a very good selective reflection characteristic of 19% with respect to light of 000 nm.
【００２８】次に、図３に、本実施例２における素子構
造を有する太陽電池素子の長時間光照射時における素子
温度と変換効率変化状態を示す。ここで、比較例とし
て、従来より用いられていた金属反射防止膜（Ａｌ、Ａ
ｇなどを用いた膜）を多層選択反射膜２０の代りに用い
た素子構造を有する太陽電池素子の特性を示す。Next, FIG. 3 shows a change in the device temperature and the conversion efficiency of the solar cell device having the device structure in Example 2 during long-time light irradiation. Here, as a comparative example, a metal antireflection film (Al, A) conventionally used was used.
This shows characteristics of a solar cell element having an element structure in which a film using g or the like is used instead of the multilayer selective reflection film 20.
【００２９】図から明らかなように、本実施例における
太陽電池素子は、従来のものに比べ長時間の光照射にお
いても素子温度上昇が小さく、良好な光電変換特性を維
持できることが理解される。As is clear from the figure, it is understood that the solar cell element according to the present embodiment has a small increase in the element temperature even after long-time light irradiation and can maintain good photoelectric conversion characteristics as compared with the conventional solar cell element.
【００３０】[0030]
【発明の効果】以上説明したように、本発明に係る太陽
電池素子によれば、遠赤外光、近赤外光を選択的に反射
させる多層反射膜を設けたため、薄いシリコン基板を用
いた太陽電池素子においても、近赤外光を素子内部に閉
じ込めることができ、変換効率を向上させることができ
ると共に、遠赤外光を透過させることができるため、長
時間の光照射においても温度上昇が小さく、変換効率の
低下を抑制することができる。As described above, according to the solar cell element of the present invention, since a multilayer reflective film for selectively reflecting far-infrared light and near-infrared light is provided, a thin silicon substrate is used. Even in solar cell elements, near-infrared light can be confined inside the element, conversion efficiency can be improved, and far-infrared light can be transmitted. , And a decrease in conversion efficiency can be suppressed.
【図１】実施例の基本構成を示す図である。FIG. 1 is a diagram showing a basic configuration of an embodiment.
【図２】多層選択反射膜２０の反射特性の波長依存性を
示す特性図である。FIG. 2 is a characteristic diagram showing the wavelength dependence of the reflection characteristics of a multilayer selective reflection film 20.
【図３】実施例の温度及び出力電力の経時変化を示す特
性図である。FIG. 3 is a characteristic diagram showing changes over time in temperature and output power in the example.
【図４】太陽電池素子の温度特性を示す図である。FIG. 4 is a diagram showing temperature characteristics of a solar cell element.
１０ シリコン基板 １２ 受光面電極 １４ 反射防止膜 １６ 裏面電極 ２０ 多層選択反射膜 ２０ａ 高屈折率層 ２０ｂ 低屈折率層 DESCRIPTION OF SYMBOLS 10 Silicon substrate 12 Light-receiving surface electrode 14 Anti-reflection film 16 Back surface electrode 20 Multilayer selective reflection film 20a High refractive index layer 20b Low refractive index layer
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 31/04 - 31/078 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 31/04-31/078
Claims (1)
ン基板への光入射による正負キャリアの生成を利用した
太陽電池素子であって、 前記シリコン基板のｐ領域側の表面に接続された第１の
電極と、 前記シリコン基板のｎ領域側の表面に設けられた第２の
電極と、 前記シリコン基板の裏面側を覆うように形成され、表面
側から入射しシリコン基板を透過してきた光の中の近赤
外線を選択的に反射し、遠赤外線を透過させる多層反射
膜と、 を有することを特徴とする結晶シリコン太陽電池素子。1. A solar cell element utilizing generation of positive and negative carriers by light incidence on a crystalline silicon substrate having a p region and an n region, wherein the first solar cell element is connected to a surface of the silicon substrate on the p region side. An electrode, a second electrode provided on the surface of the silicon substrate on the n-region side, and a second electrode formed to cover the back surface of the silicon substrate, the light being incident on the front surface and transmitted through the silicon substrate. 1. A crystalline silicon solar cell element, comprising: a multilayer reflective film that selectively reflects near infrared rays and transmits far infrared rays .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4051884A JP3006266B2 (en) | 1992-03-10 | 1992-03-10 | Solar cell element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4051884A JP3006266B2 (en) | 1992-03-10 | 1992-03-10 | Solar cell element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05259495A JPH05259495A (en) | 1993-10-08 |
| JP3006266B2 true JP3006266B2 (en) | 2000-02-07 |
Family
ID=12899313
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4051884A Expired - Fee Related JP3006266B2 (en) | 1992-03-10 | 1992-03-10 | Solar cell element |
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Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2931498B2 (en) * | 1993-04-21 | 1999-08-09 | シャープ株式会社 | Solar cell and method of manufacturing the same |
| US5569332A (en) * | 1995-08-07 | 1996-10-29 | United Solar Systems Corporation | Optically enhanced photovoltaic back reflector |
| WO2003007049A1 (en) | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
| JP3866747B2 (en) * | 2002-10-15 | 2007-01-10 | シャープ株式会社 | Solar cell module |
| JP4929660B2 (en) * | 2005-09-27 | 2012-05-09 | ソニー株式会社 | Dye-sensitized photoelectric conversion element, photoelectric conversion element module, electronic device, moving object, and power generation system |
| JP2007103813A (en) * | 2005-10-07 | 2007-04-19 | Techno Polymer Co Ltd | Back sheet for solar cell |
| EP1949450B1 (en) * | 2005-11-08 | 2015-01-21 | LG Electronics Inc. | Solar cell of high efficiency |
| WO2009085601A2 (en) * | 2007-12-21 | 2009-07-09 | Qualcom Mems Technologies, Inc. | Multijunction photovoltaic cells |
| CN102067332A (en) * | 2008-06-23 | 2011-05-18 | 三菱电机株式会社 | Photovoltaic system and method for manufacturing the same |
| KR100984701B1 (en) * | 2008-08-01 | 2010-10-01 | 엘지전자 주식회사 | Method for Manufacturing Solar Cell |
| KR101213470B1 (en) * | 2008-09-08 | 2012-12-20 | 한국전자통신연구원 | Antireflection coating for solar cell, solar cell, and manufacturing method for solar cell |
| KR101149308B1 (en) * | 2009-04-02 | 2012-05-24 | 삼성코닝정밀소재 주식회사 | Multi-layer thin film structure for solor cell |
| JP2012084747A (en) * | 2010-10-13 | 2012-04-26 | National Institute Of Advanced Industrial & Technology | Crystal silicon solar cell manufacturing method |
| BR112013019158B1 (en) * | 2011-01-26 | 2021-02-02 | Massachusetts Institute Of Technology | transparent photovoltaic cell, photovoltaic matrix and method for generating electricity |
| CN103715276A (en) * | 2012-09-28 | 2014-04-09 | 茂迪股份有限公司 | Solar cell and module thereof |
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1992
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