JP2890494B2 - Method for producing plasma thin film - Google Patents

Method for producing plasma thin film

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Publication number
JP2890494B2
JP2890494B2 JP17851689A JP17851689A JP2890494B2 JP 2890494 B2 JP2890494 B2 JP 2890494B2 JP 17851689 A JP17851689 A JP 17851689A JP 17851689 A JP17851689 A JP 17851689A JP 2890494 B2 JP2890494 B2 JP 2890494B2
Authority
JP
Japan
Prior art keywords
thin film
plasma
plasma thin
semiconductor substrate
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17851689A
Other languages
Japanese (ja)
Other versions
JPH0344472A (en
Inventor
宏 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP17851689A priority Critical patent/JP2890494B2/en
Publication of JPH0344472A publication Critical patent/JPH0344472A/en
Application granted granted Critical
Publication of JP2890494B2 publication Critical patent/JP2890494B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、プラズマ薄膜の製造方法に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to a method for producing a plasma thin film.

〔従来の技術〕[Conventional technology]

従来、半導体基板上にプラズマ酸化シリコン膜を形成
する方法は、例えば第３図に示すように表面を絶縁した
電極を平行に配置し、一定温度に保たれた真空容器内に
半導体基板を搬送する。続いて、容器内を真空に引いた
後、第４図のチャートに示すように膜成長に必要な反応
ガスを流す。ガスの流量と圧力か所定値に達した後、前
記電極に高周波（RF）を印加し、一定時間保持した後、
高周波（RF）を切る。膜形成の終了した半導体基板は真
空容器外に搬出される。Conventionally, a method of forming a plasma silicon oxide film on a semiconductor substrate involves, for example, arranging electrodes insulated on the surface in parallel as shown in FIG. 3 and transporting the semiconductor substrate into a vacuum vessel maintained at a constant temperature. . Subsequently, after the inside of the container is evacuated, a reaction gas necessary for film growth is flowed as shown in the chart of FIG. After the gas flow rate and pressure reach a predetermined value, a high frequency (RF) is applied to the electrode, and after holding for a certain time,
Turn off radio frequency (RF). The semiconductor substrate on which film formation has been completed is carried out of the vacuum vessel.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

しかしながら、従来技術では、膜形成終了後高周波
（RF）を急激に切るために印加された電荷の一部が半導
体基板上に残る。通常、下部電極は、半導体基板の支持
も兼ねているので、残った電荷は、半導体基板と電気的
に絶縁され電極間で逃げ場を失い静電気力となって半導
体基板と電極を引きつける。静電気力は酸化シリコン膜
の生成条件によっては大きな力となり、搬送トラブルを
引き起こしていた。However, in the related art, after the film formation is completed, part of the charge applied to rapidly cut off the high frequency (RF) remains on the semiconductor substrate. Normally, since the lower electrode also serves as support for the semiconductor substrate, the remaining charge is electrically insulated from the semiconductor substrate, loses a space between the electrodes, becomes an electrostatic force, and attracts the semiconductor substrate and the electrode. The electrostatic force becomes a large force depending on the conditions for forming the silicon oxide film, causing a transport trouble.

しかるに本発明は、かかる課題の解決するものであ
り、その目的とするところは、搬送トラブルのない安定
したプラズマ薄膜を提供することである。However, the present invention is to solve such a problem, and an object of the present invention is to provide a stable plasma thin film free from transport trouble.

〔課題を解決するための手段〕[Means for solving the problem]

本発明のプラズマ薄膜の製造方法は、高周波（RF）を
印加したプラズマCVDにより薄膜を形成するプラズマ薄
膜の製造方法において、前記高周波を印加し所望の時間
経過後、膜成長に必要な主反応ガスを遮断し、膜を成長
させないガスを流しながら高周波出力を経時的に下げて
いくことを特徴とする。The method of manufacturing a plasma thin film according to the present invention is a method of manufacturing a plasma thin film, wherein a thin film is formed by plasma CVD to which a high frequency (RF) is applied. , And the high-frequency output is reduced with time while flowing a gas that does not allow the film to grow.

また、高周波出力の変化が100％から徐々に小さくな
っていくことを特徴とする。Further, the change in the high-frequency output gradually decreases from 100%.

また、高周波出力の変化が100％から一旦０になった
後、再度50％以下の値をとり、その後０になることを特
徴とするプラズマ薄膜の製造方法。A method for producing a plasma thin film, wherein a change in the high-frequency output once becomes 0 from 100%, then takes a value of 50% or less again, and thereafter becomes 0.

〔実施例〕〔Example〕

以下本発明の実施例における工程を、第１図に示すチ
ャートに基づいて詳細に説明する。Hereinafter, the steps in the embodiment of the present invention will be described in detail with reference to the chart shown in FIG.

まず、トランジスタや抵抗等の半導体素子及びアルミ
ニウム配線の形成された半導体基板をプラズマ酸化シリ
コン膜を形成するために、約400℃に保たれ、絶縁され
た電極が平行に配置された真空容器内に搬送する。この
容器内を一旦真空に引いた後、TEOS［Si(OC2H5)4］／O2
等の反応ガスを流し、所定の流量、圧力にコントロール
した後、13.56MHz、400Wの高周波（RF）を印加する。所
望の時間経過した後、主反応ガス（TEOS）を切り、圧力
を下げ、O2ガスを流しながら徐々にRF出力を下げてい
く。半導体基板上に蓄積された電荷は、RFの減少と共に
減っていきついには零になり、基板を下部電極から離す
ときに吸着することはなくなる。First, in order to form a plasma silicon oxide film on a semiconductor substrate on which semiconductor elements such as transistors and resistors and aluminum wiring are formed, the semiconductor substrate is kept at about 400 ° C. in a vacuum vessel in which insulated electrodes are arranged in parallel. Transport. After the inside of this container is once evacuated, TEOS [Si (OC 2 H 5 ) 4 ] / O 2
After controlling the flow rate and pressure to a predetermined value, a radio frequency (RF) of 13.56 MHz and 400 W is applied. After a desired time has elapsed, the main reaction gas (TEOS) is turned off, the pressure is reduced, and the RF output is gradually reduced while flowing O 2 gas. The charge accumulated on the semiconductor substrate decreases with decreasing RF and eventually becomes zero, and does not stick when the substrate is separated from the lower electrode.

また、第２図に示すチャートでは、同様に所望の時間
の経過した後、主反応ガス（TEOS）を切り、O2ガスのみ
を流し圧力を下げ、RFを一旦切った後、再度ごく弱くRF
を印加し、切る。半導体基板に蓄積された電荷は２度目
の印加によってO2のプラズマ状態を導体として電極から
逃げ、吸着は起こらない。In the chart shown in FIG. 2, similarly, after a desired time has elapsed, the main reaction gas (TEOS) is turned off, only the O 2 gas is flowed, the pressure is lowered, RF is turned off once, and then RF is weakened again.
And cut. The electric charge accumulated in the semiconductor substrate escapes from the electrode by using the O 2 plasma state as a conductor by the second application, and adsorption does not occur.

〔発明の効果〕〔The invention's effect〕

以上の如く本発明によれば、高周波（RF）を印加した
プラズマCVDにより薄膜を形成するプラズマ薄膜の製造
方法において、前記高周波を印加し所望の時間経過後、
膜成長に必要な主反応ガスを遮断し、膜を成長させない
ガスを流しながら高周波出力を経時的に下げていくこと
により、プラズマCVDによる成膜時に起こる電極と半導
体基板の吸着をなくすことができ半導体基板上に安定し
た薄膜を形成することができる。As described above, according to the present invention, in a method of manufacturing a plasma thin film in which a thin film is formed by plasma CVD to which a radio frequency (RF) is applied,
By shutting off the main reaction gas required for film growth and reducing the high-frequency output over time while flowing a gas that does not grow the film, it is possible to eliminate adsorption between the electrode and the semiconductor substrate during film formation by plasma CVD. A stable thin film can be formed on a semiconductor substrate.

【図面の簡単な説明】[Brief description of the drawings]

第１図乃び第２図は、本発明の一実施例によるプラズマ
薄膜形成時のRF出力、主反応ガス及び酸素の流量を示す
チャートである。 第３図は、プラズマ薄膜の形成装置の概略図である。 第４図は、従来のプラズマ薄膜形成時のRF出力、主反応
ガス及び酸素の流量を示すチャートである。 31……RF発信器 32……上部電極 33……下部電極 34……真空容器 35……半導体基板FIG. 1 and FIG. 2 are charts showing the RF output, the main reaction gas and the flow rates of oxygen when forming a plasma thin film according to one embodiment of the present invention. FIG. 3 is a schematic view of an apparatus for forming a plasma thin film. FIG. 4 is a chart showing the RF output and the flow rates of the main reaction gas and oxygen when forming a conventional plasma thin film. 31 RF transmitter 32 Upper electrode 33 Lower electrode 34 Vacuum container 35 Semiconductor substrate

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】高周波（RF）を印加したプラズマCVDによ
り薄膜を形成するプラズマ薄膜の製造方法において、前
記高周波を印加し所望の時間経過後、膜成長に必要な主
反応ガスを遮断し、膜を成長させないガスを流しながら
高周波出力を経時的に下げていくことを特徴とするプラ
ズマ薄膜の製造方法。In a method of manufacturing a plasma thin film, wherein a thin film is formed by plasma CVD to which a radio frequency (RF) is applied, a main reaction gas necessary for film growth is cut off after a desired time has passed by applying the radio frequency. A method for producing a plasma thin film, characterized in that a high-frequency output is lowered with time while flowing a gas that does not cause growth of a plasma. 【請求項２】請求項１記載の高周波出力の変化が100％
から徐々に小さくなっていくことを特徴とするプラズマ
薄膜の製造方法。2. The change in high-frequency output according to claim 1 is 100%.
A method for producing a plasma thin film, wherein the plasma thin film is gradually reduced. 【請求項３】請求項１記載の高周波出力の変化が100％
から一旦零になった後、再度50％以下の値をとり、その
後零になることを特徴とするプラズマ薄膜の製造方法。3. The change in high frequency output according to claim 1 is 100%.
A method for producing a plasma thin film, which once takes a value of zero, takes a value of 50% or less again, and thereafter takes the value to zero.
JP17851689A 1989-07-11 1989-07-11 Method for producing plasma thin film Expired - Lifetime JP2890494B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17851689A JP2890494B2 (en) 1989-07-11 1989-07-11 Method for producing plasma thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17851689A JP2890494B2 (en) 1989-07-11 1989-07-11 Method for producing plasma thin film

Publications (2)

Publication Number Publication Date
JPH0344472A JPH0344472A (en) 1991-02-26
JP2890494B2 true JP2890494B2 (en) 1999-05-17

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