JP2869907B2 - Connection structure of semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection structure for a semiconductor device.

[0002]

2. Description of the Related Art In the field of semiconductor devices, electrodes having electrodes are used.
A semiconductor device composed of a C chip or the like may be mounted on a film carrier. In this case, the film carrier
Generally, a structure in which an insulating layer is provided on the entire upper surface of a film substrate including a conductive layer in order to protect a conductive layer patterned on the upper surface of a film substrate made of a resin such as polyimide or to secure insulation. It has become.

When a semiconductor device is mounted on such a film carrier, a planar rectangular opening is formed in a portion of the insulating layer corresponding to a predetermined portion of the conductive layer, and the opening is exposed through the opening. The semiconductor device is mounted on the film carrier by connecting the electrode of the semiconductor device to the conductive layer thus formed via solder. in this case,
Screen printing is known as a method for forming an insulating layer having a planar rectangular opening. According to this screen printing, a screen mask having a predetermined pattern is arranged in parallel on a film substrate at a predetermined interval, and the squeegee presses the screen mask to extrude the insulating ink. It is possible to easily and quickly form an insulating layer having an opening having a flat rectangular shape on an upper side.

[0004]

However, in such a conventional film carrier, since the insulating ink has viscosity, bleeding occurs in the insulating layer immediately after printing, and the screen mask is pressed with a squeegee. , The screen mask expands and contracts, causing a shift in the printing position.
The limit is about μm square, and the pitch is 400 μm
Degree is the limit. Therefore, there is a problem that even if the electrodes of the semiconductor device can be further miniaturized, they cannot be mounted on such a film carrier. An object of the present invention is to provide a connection structure of a semiconductor device in which a semiconductor device having further miniaturized electrodes can be mounted on a film carrier having an insulating layer formed by screen printing.

[0005]

SUMMARY OF THE INVENTION The present invention relates to a semiconductor device having a solder bump on an electrode, and an opening for forming an insulating layer opening on an upper surface of a conductive layer patterned on an upper surface of a film substrate. A photoresist layer is provided at least around the inside of the region, an insulating layer is formed by screen printing in a region other than the opening forming region, and then the photoresist layer is peeled off to form the opening in the insulating layer. A film carrier having an opening corresponding to the formation region, wherein the solder bumps of the semiconductor device are connected to the conductor layer in the opening of the film carrier.

[0006]

According to the present invention, a film carrier in which an insulating layer is formed by screen printing in a region other than the opening forming region while a photoresist layer capable of forming a fine pattern is formed at least around the opening forming region. Because the printing range is regulated by the end face of the photoresist layer, the size of the opening and the pitch thereof can be further miniaturized, and therefore, a film carrier having an insulating layer formed by screen printing can be used. In addition, a semiconductor device having further miniaturized electrodes can be mounted.

[0007]

FIG. 1 shows a state before connection between a semiconductor device and a film carrier according to an embodiment of the present invention. In the semiconductor device 1, an electrode 3 made of Al or the like is pattern-formed on the lower surface of the device main body 2, and a protective film 4 is provided on the entire lower surface of the lower surface of the electrode 3 except for a predetermined part. , An under bump metal 5 made of, for example, a laminate of Cu on the lower surface of an alloy made of Ti and W, a metal layer 6 made of Cu or the like is provided on the lower surface of the under bump metal 5, And the like, and a solder bump 7 is provided around the same. Film carrier 11
As will be described in detail later, a photoresist layer is provided in an opening forming region where an opening 14 is to be formed on the upper surface of the conductive layer 13 patterned on the upper surface of the film substrate 12, and a photoresist layer other than the opening forming region is provided. Insulation layer 1 by screen printing on the area
5 is formed, and then the photoresist layer is peeled off, so that the insulating layer 15 has openings 1 corresponding to the opening forming regions.
4 is formed, and a solder layer 16 is provided on the conductive layer 13 in the opening 14. Then, when the solder bumps 7 of the semiconductor device 1 are joined to the solder layers 16 of the film carrier 11, as shown in FIG.
The solder bumps 7 are connected to the conductive layer 13 by solidification after being melted and integrated, that is, the semiconductor device 1 is mounted on the film carrier 11.

Next, the structure of the film carrier 11 will be described with reference to FIGS. First, as shown in FIG. 3, a conductive layer 13 is patterned on the upper surface of a film substrate 12 made of a resin such as polyimide. In this case, a conductive film may be formed on the entire surface of the film substrate 12 by a sputtering method, an electroless plating method, a laminating method using an adhesive, or the like, and then the conductive layer may be formed by etching the conductive film. It is preferable to provide a film substrate 12 on the surface of the conductive film by a casting method in which a long conductive film made of a copper foil or the like is coated with a varnish of a resin such as a polyimide, and then similarly etch the conductive film to form a conductive film. Layer 1
Forming 3 is preferable in terms of heat resistance. next,
As shown in FIG. 4, a photoresist layer 21 having a thickness of, for example, about 50 μm is provided on the entire surface. In this case, a negative film photoresist may be thermocompression bonded, or a negative liquid photoresist may be applied by roll coating or the like. Next, for example, 10
Irradiation with light such as ultraviolet light is performed using a photomask having a predetermined pattern corresponding to the opening forming region 22 where the opening 14 (see FIG. 1) of 0 μm square is to be formed. The photoresist layer 21 is exposed. Thereafter, when development is performed, unnecessary portions of the photoresist layer 21 other than the opening forming region 22 are peeled off, and the opening forming region 2 is removed.
2 only, the photoresist layer 21 remains. Next, by performing screen printing using a screen mask (not shown) having an island-like pattern slightly larger than the opening forming region 22 and an insulating ink, as shown in FIG. An insulating ink layer 23 is applied to the entire surface except the periphery to a thickness of about 10 to 25 μm. In this case, although the size of the island pattern of the screen mask depends on the viscosity of the insulating ink, the size of the opening forming region 22 is more than 20 to 30 μm on each side than the size of 100 μm square.
Increase the size by about μm. As the insulating ink, one obtained by dissolving an epoxy resin in an organic solvent is used. After that, if left to some extent, the insulating ink layer 23 flows and spreads, but as shown in FIG.
And the entire surface except the photoresist layer 21 is covered with the insulating ink layer 23. Next, the insulating ink layer 23 is dried to reduce its thickness to 1.
When the photoresist layer 21 is peeled off after the thickness is set to about 0 to 20 μm, an insulating layer 15 having an opening 14 at a portion corresponding to the opening forming region 22 is formed as shown in FIG. Next, as shown in FIG. 8, a solder layer 16 is formed on the conductive layer 13 in the opening 14. In this case, the solder layer 1
The thickness of 6 may be such that its surface is equal to or less than the surface of the insulating layer 15, but if it is equal to or greater than the surface of the insulating layer 15, the connection reliability can be improved. The method of forming the solder layer 16 may be any method such as electroplating, printing, or using molded solder. Thus, the film carrier 11 including the insulating layer 15 having the opening 14 is manufactured.

In the film carrier 11 manufactured as described above, the insulating layer 14 is formed by screen printing in a region other than the opening forming region 22 with the photoresist layer 21 capable of forming a fine pattern formed in the opening forming region 22.
Is formed, the printing range can be regulated by the end face of the photoresist layer 21. Therefore, the insulating ink layer 23 immediately after printing is prevented from oozing out of a region other than the region where the predetermined insulating layer 15 is to be formed. Even if the printing position is slightly shifted due to the expansion and contraction of the screen mask, the viscosity of the insulating ink layer 23 is utilized so that the insulating layer 15 is formed only in the area where the predetermined insulating layer 15 is to be formed. Therefore, for example, the size of the opening 14 can be further reduced to 100 μm and the pitch thereof to about 200 μm. Therefore, the film carrier 11 having the insulating layer 15 by screen printing
In addition, the semiconductor device 1 having further miniaturized electrodes can be mounted.

In the embodiment described above, for example, as shown in FIG.
Although the number 1 is provided, the point is that it is only necessary that the printing range can be regulated by the end face of the photoresist layer. Therefore, the photoresist layer only needs to be provided at least around the area to be screen-printed. In the above embodiment, a negative photoresist is used. However, a positive photoresist may be used by using a photomask having a pattern opposite to that of the above embodiment.

[0011]

As described above, according to the present invention, screen printing is performed on a region other than the opening forming region in a state where a photoresist layer capable of forming a fine pattern is formed at least around the opening forming region. Since the film carrier on which the insulating layer is formed is used, the size of the opening and the pitch thereof can be further reduced by restricting the printing range at the end face of the photoresist layer, and thus screen printing. A semiconductor device having further miniaturized electrodes can be mounted on a film carrier having an insulating layer according to (1).

[Brief description of the drawings]

FIG. 1 is a sectional view showing a state before connection between a semiconductor device and a film carrier according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a state after connection of a semiconductor device and a film carrier.

FIG. 3 is a cross-sectional view showing a state in which a conductive layer is pattern-formed on an upper surface of a film substrate in manufacturing a film carrier.

FIG. 4 is a cross-sectional view showing a state in which a photoresist layer is formed in an opening forming region on the upper surface of a conductive layer in manufacturing a film carrier.

FIG. 5 is a cross-sectional view of a state immediately after an insulating ink layer is applied by screen printing in manufacturing a film carrier.

FIG. 6 is a cross-sectional view showing a state in which an insulating ink layer flows and is blocked at an end face of a photoresist layer in manufacturing a film carrier.

FIG. 7 is a cross-sectional view illustrating a state where an opening is formed in an insulating layer by removing a photoresist layer in manufacturing a film carrier.

FIG. 8 is a cross-sectional view showing a state where a solder layer is provided on a conductive layer in an opening portion in manufacturing a film carrier.

[Explanation of symbols]

 Reference Signs List 1 semiconductor device 2 electrode 7 solder bump 11 film carrier 12 film substrate 13 conductive layer 14 opening 15 insulating layer 16 solder layer

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 21/60 311 H05K 3/28

Claims (2)

(57) [Claims] 1. A semiconductor device having solder bumps on electrodes, and a photo-resistor at least in an opening forming region where an insulating layer opening is to be formed on an upper surface of a conductive layer patterned on an upper surface of a film substrate. A resist layer is provided, an insulating layer is formed by screen printing in a region other than the opening forming region, and then the photoresist layer is peeled off, so that the opening corresponding to the opening forming region is formed in the insulating layer. A connection structure for a semiconductor device, comprising: a formed film carrier; and wherein the solder bump of the semiconductor device is connected to the conductor layer in the opening of the film carrier. 2. The connection structure for a semiconductor device according to claim 1, wherein the film substrate of the film carrier and the conductive layer formed on the upper surface of the film substrate are formed by a casting method.