JP2018022812A - Electronic device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To largely reduce the transmission of a distortion from a flexible board to a semiconductor circuit chip mounted on the flexible board.SOLUTION: An electronic device comprises: a flexible board 11 having a flexible wiring film, a flexible sensor, a flexible battery, etc. formed on its surface; a semiconductor circuit chip 12 which is an IC chip containing a semiconductor integrated circuit (IC) of electronic circuits, such as a semiconductor signal processing circuit and a radio communication circuit; and distortion buffer structures 13a, 13b which elastically secure and support the semiconductor circuit chip 12 only by its opposing ends in the state of floating from the flexible board 11, and electrically connect between the semiconductor circuit chip 12 and the flexible board 11. Thus even if the flexible board 11 is bent, the distortion buffer structures 13a, 13b can largely reduce the transmission of bending as distortion to the semiconductor circuit chip 12.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an electronic device and a manufacturing method thereof, and more particularly to a flexible and ultrathin electronic device and a manufacturing method thereof.

  2. Description of the Related Art In recent years, sensor devices that are attached to a living body and detect biological information have attracted attention. In particular, a clothing-type wearable device that is attached to a human body is expected as an electronic device that will drive a new electronics market. An important point for this type of garment-type wearable device is flexibility with a flexible structure of how it can be worn comfortably. As a technique for producing this flexible electronic device, development of a printing technique for printing a highly stretchable wiring, a sensor, or the like on a flexible substrate has been advanced. However, in printing technology, a microcomputer (hereinafter abbreviated as “microcomputer”) that processes signals obtained from sensors, an RF-IC (Radio Frequency Integrated Circuit) for wireless communication in the several hundred MHz band, It is difficult to manufacture (see Non-Patent Document 1, for example).

  Therefore, after manufacturing and thinning a semiconductor circuit chip (IC chip) in which a microcomputer, an RF-IC, etc. are integrated on a silicon (Si) substrate or SOI (Silicon On Insulation) substrate (for example, Non-Patent Documents 2 and 3), and a method of manufacturing an electronic device by adhering it to a flexible substrate is employed. In addition, in order to give flexibility to a flexible electronic device and prevent the IC chip from cracking or peeling while having sufficient flexibility of the flexible substrate, Patent Document 1 discloses that the IC chip is bonded only in the central region. A method is disclosed in which the mounted IC chip hardly follows even when the flexible substrate is bent, by fixing to the flexible substrate via a layer.

  Further, in Patent Document 2, a flexible electronic device structure (comprising a functional element, an electrode, and an electrode pad) manufactured on a substrate is peeled off from the substrate, adhered to a flexible substrate, and transferred. A method of manufacturing an electronic device is disclosed. In the electronic device described in Patent Document 2, since the entire electronic device is flexible, a more flexible and flexible electronic device can be realized. Such an electronic device that combines an IC manufacturing technique using a silicon substrate and a printing technique is called flexible hybrid electronics and has attracted attention in recent years (for example, see Non-Patent Document 4).

H. Fuketa, et ai., “Organic-Transistor-Based 2kV ESD-Tolerant Flexible Wet Sensor Sheet for Biomedical Applications with Wireless Power and Data Transmission Using 13.56MHz Magnetic Resonance”, 2014 International Solid-State Circuits Conference (ISSCC), ( 2014) pp.490-491 YSKim. Et al., “Ultra Thinning of DRAM wafer for 3D WOW Application: Impact of Thinning on Retention Characteristic and Atomic Level Analysis of Backside Damage”, Proc. Advanced Metalization Conference (2014) and ADMETA 2014., pp.1- 2 Y.S.Kim.et al., “Hot Spt Co. etal., Oiling Evaluation using Closed-Channel Cooling System (C3S) for MPU 3DI Application”, IEEE symp.on VLSI Technol., (2011) pp.140-145 Motoyuki Otani, “Flexible Hybrid Electronics (FHE) Technology Aiming for Leaps”, Nikkei Technology, (2016)

JP 2012-038921 A Japanese Patent Application Laid-Open No. 2006-039343

  However, when the electronic device manufactured by the flexible hybrid electronics described in Non-Patent Document 4 is used for a clothing-type wearable device, if the clothing-type wearable expands or bends, it is a flexible substrate of the electronic device. Then, it is transmitted as distortion to a semiconductor circuit chip (for example, a semiconductor signal processing circuit or a wireless communication circuit integrated into a microcomputer or RF-IC) that is a functional element of the electronic device. As a result, the conventional semiconductor circuit chip cannot accurately detect biological information that is not affected by the bending of the flexible substrate and the expected characteristics based on it, or the ultra-thin semiconductor circuit chip itself breaks, There is a problem of hindering the reliability and longevity of electronic devices.

  Further, the method described in Patent Document 1 is a method related to mounting of a packaged IC chip (semiconductor circuit chip), and the IC chip is not extremely thin, and bending or stretching of the flexible substrate is performed via an adhesive layer. Therefore, it is inevitable that it is transmitted to the IC chip as strain, and it is difficult to use it for a clothing type wearable device. Furthermore, the electronic device described in Patent Document 2 is used for a clothing-type wearable device because no measures have been taken to prevent the bending of the flexible substrate from being transmitted to the ultra-thin electronic device structure on the flexible substrate. In this case, accurate human body information detection and desired characteristics based on the detection cannot be obtained.

  The present invention has been made in view of the above points, and an object thereof is to provide an electronic device having a structure in which transmission of strain from a flexible substrate to a semiconductor circuit chip mounted on the flexible substrate is significantly reduced, and a method for manufacturing the electronic device. And

  In order to achieve the above object, an electronic device according to a first invention includes a semiconductor circuit chip containing an electronic circuit having terminals formed on the surface, and a flexible substrate having at least a flexible wiring film and a flexible sensor formed on the surface. And having a wiring film formed on the surface, connecting one end of the wiring film to the terminal of the semiconductor circuit chip, and connecting the other end of the wiring film to the flexible wiring film, And a strain buffering structure having a structure in which an end portion of the semiconductor circuit chip is elastically fixed and supported in a state where the semiconductor circuit chip and the flexible substrate are separated from each other.

  In order to achieve the above object, an electronic device according to a second aspect of the present invention is the semiconductor circuit chip in which the strain buffering structure of the first aspect is formed on a very thin substrate different from the flexible substrate. The wiring film is formed on a plurality of connection substrate portions having a predetermined plane shape, which separately connect a side edge portion and an end portion of the ultra-thin substrate, and the plurality of connection connections One end of the wiring film on one end of each substrate portion is electrically connected to a terminal of the semiconductor circuit chip, and only the other end of each of the plurality of connection substrate portions is respectively connected to the flexible substrate. The semiconductor circuit chip and the flexible substrate are elastically fixed and supported in a separated state, and the other end of the wiring film is electrically connected to the flexible wiring film.

  In order to achieve the above object, according to a third aspect of the present invention, in the electronic device according to the first aspect, the flexible substrate includes a rectangular region for mounting the semiconductor circuit chip, a side edge of the rectangular region, and a substrate side. It has an opening that leaves a portion of the substrate that is connected to the rectangular frame along the edge by a plurality of connecting portions having a predetermined shape, and at least a flexible wiring film and a flexible sensor are formed on the surface. The strain buffering structure portion of the first invention is a structure in which the wiring film is formed on the surface of the connection portion of the flexible substrate, and the semiconductor circuit chip mounted in the rectangular region of the flexible substrate is It is elastically fixed and supported by the connecting portion and the square frame, one end of the wiring film is connected to the terminal of the semiconductor circuit chip, and the other end of the wiring film is connected to the front. Characterized by connecting the flexible wiring layer.

  In order to achieve the above object, an electronic device according to a fourth aspect of the present invention is a strain buffer structure according to the first aspect, wherein the flexible substrate and the ultrathin substrate on which the semiconductor circuit chip is formed The elastic substrate is formed on different elastic substrates, and the elastic substrate is connected to a rectangular region for mounting the semiconductor circuit chip, and a plurality of connections having a predetermined shape in a plane in which one end is connected to a side edge of the rectangular region. And a wiring film is formed on the surfaces of the plurality of connecting portions, and one end of the wiring film is electrically connected to a terminal of the semiconductor circuit chip mounted on a rectangular region of the elastic substrate. And the other ends of the plurality of connection portions are elastically fixed and supported on the flexible substrate through a spacer while being spaced apart from the semiconductor circuit chip. Characterized by electrically connecting the said wiring film on the end flexible wiring film by a conductive member for covering the spacer.

  Here, the predetermined shape in the first to fourth inventions is a zigzag shape, an S shape, or a mesh shape.

  In order to achieve the above object, a method for manufacturing an electronic device according to a sixth aspect of the invention includes a step of manufacturing a semiconductor circuit chip containing an electronic circuit having a terminal formed on the surface, and at least a flexible wiring film and a flexible on the surface. One end of the wiring film is connected to the terminal of the semiconductor circuit chip by a step of producing a flexible substrate on which a sensor is formed, and a strain buffer structure having a structure in which a wiring film is formed on the surface, and the wiring A fixing step of connecting the other end of the film to the flexible wiring film and elastically fixing and supporting the end of the semiconductor circuit chip in a state where the semiconductor circuit chip and the flexible substrate are separated from each other. It is characterized by.

In order to achieve the above object, a method for manufacturing an electronic device according to a seventh aspect of the invention includes the step of producing a semiconductor circuit chip according to the sixth aspect of the invention on an ultrathin substrate different from the flexible substrate. As a process of making a circuit chip,
In the fixing step according to the sixth aspect of the invention, the plane has a predetermined shape and a wiring film is formed on the surface, one end of the wiring film is electrically connected to the terminal of the semiconductor circuit chip, and each one end is electrically A connecting portion forming step of forming a plurality of connecting portions connected to the ultra-thin substrate, electrically connecting the other end of each of the wiring films of the plurality of connecting portions to the flexible wiring film, A step of fixing the semiconductor circuit chip and the flexible substrate in a separated state at the ultra-thin substrate portion where the other ends of the wiring films of the plurality of connection portions are formed. It is characterized by.

In addition, in order to achieve the above object, an electronic device manufacturing method according to an eighth invention is the same as the connection part forming step according to the seventh invention except that one end is separately connected to the terminal of the semiconductor circuit chip. The step of forming a plurality of wiring films having a predetermined planar shape with an open end on the silicon substrate, and etching from the back side of the silicon substrate on which the semiconductor circuit chip and the wiring film are respectively formed, Forming a recess leaving a semiconductor circuit chip and thinly leaving the silicon substrate portion on which the plurality of wiring films are formed; and from the silicon substrate on which the recess is formed, the semiconductor circuit chip and the The thin silicon substrate portion having a plurality of wiring films formed on the surface is peeled off, and the thin silicon substrate portion having the plurality of wiring films formed on the surface is removed. More configuration and obtaining a plurality of connections on the substrate ultrathin,
The step of fixing the semiconductor circuit chip and the flexible substrate in a state of being separated from each other in the seventh invention is performed by using only the ultrathin substrate portion immediately below each end of the plurality of wiring films as the surface of the flexible substrate. A step of fixing via a spacer in a state of being separated from each other, and a step of electrically connecting the flexible wiring film and each end of the plurality of wiring films with a conductive member. And

In addition, in order to achieve the above object, an electronic device manufacturing method according to a ninth invention includes a step of manufacturing a flexible substrate according to the sixth invention, wherein at least a flexible wiring film and a flexible sensor are formed on the surface. With respect to the previous flexible substrate, the plane between the rectangular area for mounting the semiconductor circuit chip, and the rectangular frame along the side edge of the rectangular area and the side edge of the substrate has a predetermined shape, and the wiring is formed on the surface. Forming a film and forming an opening that leaves a plurality of connecting portions each having a shape in which one end of the wiring film is electrically connected to the flexible wiring film, and manufacturing a flexible substrate; age,
In the fixing step according to the sixth aspect of the invention, the terminal of the semiconductor circuit chip is electrically connected to the other end of each wiring film of the plurality of connection portions in the rectangular region of the processed flexible substrate. And a step of mounting the semiconductor circuit chip, wherein the semiconductor circuit chip is elastically fixed and supported by the plurality of connection portions and the rectangular frame.

  In order to achieve the above object, an electronic device manufacturing method according to a tenth aspect of the present invention is the ultrathin substrate on which the flexible substrate and the semiconductor circuit chip are formed in the fixing step according to the sixth aspect of the present invention. A rectangular area for mounting the semiconductor circuit chip, and a plane where one end of each of the rectangular areas is connected to a side edge of the rectangular area has a predetermined shape, and a wiring film is formed on the surface. Forming a plurality of connected portions, and terminals of the semiconductor circuit chip formed on the ultra-thin substrate are electrically connected to one end of each wiring film of the plurality of connected portions. Mounting the semiconductor circuit chip in the rectangular region, and elastically fixing the other end of the plurality of connecting portions to the flexible substrate with a spacer interposed therebetween. And a step of electrically connecting the wiring film on the other end of the plurality of connection portions and the flexible wiring film with a conductive member covering the spacer. .

  Here, the predetermined shape in the sixth to tenth inventions is a zigzag shape, an S shape, or a mesh shape.

  According to the present invention, transmission of strain from a flexible substrate to a semiconductor circuit chip mounted on the flexible substrate can be greatly reduced.

1 is a schematic configuration diagram of a first embodiment of an electronic device according to the present invention. It is the element top view at the time of each manufacturing process explaining the manufacturing method of 1st Embodiment of the electronic device which concerns on this invention, and element sectional drawing. It is the element top view and element sectional drawing at the time of each manufacturing process explaining the manufacturing method (the 1) of 2nd Embodiment of the electronic device which concerns on this invention. It is the element top view at the time of each manufacturing process and element sectional drawing explaining the manufacturing method (the 2) of 2nd Embodiment of the electronic device which concerns on this invention. It is the element top view and element sectional drawing at the time of each manufacturing process explaining the manufacturing method (the 1) of 3rd Embodiment of the electronic device which concerns on this invention. It is the element top view and element sectional drawing at the time of each manufacturing process explaining the manufacturing method (the 2) of 3rd Embodiment of the electronic device which concerns on this invention. It is the element top view and element sectional drawing at the time of each manufacturing process explaining the manufacturing method (the 3) of 3rd Embodiment of the electronic device which concerns on this invention. It is a whole block diagram of an example of the wearable device using the electronic device which concerns on this invention. It is a figure which shows the usage example of an example of the wearable device using the electronic device which concerns on this invention. 1 is a schematic schematic configuration diagram when an electronic device according to a first embodiment of the present invention is applied to a wearable device. 1 is a schematic schematic configuration diagram when an electronic device according to a first embodiment of the present invention is applied to a wearable device. 1 is a schematic schematic configuration diagram when an electronic device according to a first embodiment of the present invention is applied to a wearable device. It is explanatory drawing of the other example of the planar shape of a distortion buffer structure part. It is explanatory drawing of the other example (the 1) of a connection of a semiconductor circuit chip and a distortion buffer structure part. It is explanatory drawing of the other example (the 2) of a connection of a semiconductor circuit chip and a distortion buffer structure part. It is explanatory drawing of the other example (the 3) of a connection of a semiconductor circuit chip and a distortion buffer structure part.

Next, each embodiment of the present invention will be described with reference to the drawings.
(First embodiment)
FIG. 1 shows a schematic schematic configuration diagram of a first embodiment of an electronic device according to the present invention. As schematically shown in the figure, the electronic device 10 of the present embodiment includes a flexible substrate 11, an ultrathin semiconductor circuit chip 12, and strain buffer structures 13a and 13b having a wiring film formed on the surface. It is made up of. The flexible substrate 11 has a flexible wiring film, a flexible sensor, a flexible battery, and the like formed on the surface, and the elongation rate thereof is, for example, 1% to 10%. The semiconductor circuit chip 12 is an IC chip incorporating a semiconductor integrated circuit (IC) of an electronic circuit such as a semiconductor signal processing circuit (including a microcomputer) or a wireless communication circuit, and its expansion rate is, for example, 0.1% to 0.01. %, And it is very thin.

  In addition, the strain buffering structures 13 a and 13 b have two opposing end portions of the semiconductor circuit chip 12 and the flexible substrate 11 with a gap d between the bottom surface of the semiconductor circuit chip 12 and the top surface of the flexible substrate 11. Are separately fixed between the two opposing ends. Therefore, the semiconductor circuit chip 12 is elastically fixed to the flexible substrate 11 by the strain buffering structures 13a and 13b, and the semiconductor circuit chip 12 is not affected by the bending of the flexible substrate 11, regardless of whether the flexible structure 11 is bent. 13a and 13b are substantially stationary with a distance d from the flexible substrate 11, and the bending of the flexible substrate 11 can be greatly reduced from being transmitted to the semiconductor circuit chip 12 as distortion.

  In addition, the strain buffering structures 13a and 13b are configured such that one end of the wiring film formed on the surface is electrically connected to the terminal of the semiconductor circuit chip 12 via the fixed end of the semiconductor circuit chip 12, and the other of the wiring film The end is electrically connected to the flexible wiring film on the surface of the flexible substrate 11. That is, the strain buffering structures 13 a and 13 b elastically fix and support only the end of the semiconductor circuit chip 12 while floating from the flexible substrate 11, and electrically connect the semiconductor circuit chip 12 and the flexible substrate 11. Connect to. It should be noted that the value of the distance d between the bottom surface of the semiconductor circuit chip 12 whose ends are fixed by the strain buffer structure portions 13a and 13b and the top surface of the flexible substrate 11 is a design matter that is appropriately determined according to the use application. It is.

Next, a method for manufacturing the electronic device 10 of the present embodiment will be described.
2 (A1) to (G1) and (A2) to (G2) are an element plan view and an element cross-sectional view at each manufacturing step for explaining the manufacturing method of the first embodiment of the electronic device according to the present invention. Show. In the figure, the same components as those in FIG. 2C2 to 2G2 are cross-sectional views taken along one-dot chain lines in FIGS. 2C1 to 2G1. The manufacturing method of this embodiment is an SOI substrate integrated manufacturing method. First, as shown in the plan view of FIG. 2A1 and the cross-sectional view of FIG. 2A2, the silicon substrate 21 and the silicon oxide film layer 22 are manufactured. And an SOI substrate 20 on which the surface silicon layer 23 is laminated. The surface silicon layer 23 is extremely thin compared to the silicon substrate 21. Subsequently, as shown in the plan view of FIG. 2B1 and the cross-sectional view of FIG. 2B2, electronic circuits such as a semiconductor signal processing circuit and a wireless communication circuit are integrated at a central position of the surface silicon layer 23 by a known method. A semiconductor circuit chip 12 formed into a circuit (IC) is formed. The terminals of the semiconductor circuit chip 12 are formed on the surface of the surface silicon layer 23.

  Next, as shown in the plan view of FIG. 2 (C1) and the cross-sectional view of (C2), after forming a conductive film on the surface of the surface silicon layer 23, photolithography, etching and the like are performed on the conductive film. By applying the technique, the wiring films 24a and 24b having a zigzag planar shape with one end connected to the terminal of the semiconductor circuit chip 12 and the other end located near the end of the surface silicon layer 23 are patterned. Next, as shown in the plan view of FIG. 2 (D1) and the cross-sectional view of (D2), the silicon substrate 21 and the silicon oxide film layer are formed by deep RIE (DRIE) from the back side of the silicon substrate 21. The end portion 22 in the longitudinal direction and the semiconductor circuit chip 12 are left, and the surface silicon layer 23 below the zigzag wiring films 24a and 24b is left extremely thin, and the others are removed.

  In this way, through the same process as a known MEMS (Micro Electro Mechanical Systems) device manufacturing method, the silicon substrate 21 is 21 ', the silicon oxide film layer 22 is 22', and the surface silicon layer 23 is 23 '. As shown in FIG. 6, a recess 25 is formed in which most is removed and only a part is left, zigzag wiring films 24 a and 24 b are formed on the surface silicon layer 23 ′, and a semiconductor circuit chip A structure in which 12 is formed extremely thin is manufactured.

  Subsequently, when an adhesive material such as polydimethylsiloxane (PDMS) is adhered to the upper part of the structure, and the adhesive material is pulled up while maintaining the adhesive state, the structure has a thick thickness at both end portions in the longitudinal direction. By cutting, zigzag wiring films 24a and 24b are formed on the surface, and the surface silicon layer 23 ′ on which the semiconductor circuit chip 12 is formed is pulled up together with the adhesive. That is, as shown in the plan view of FIG. 2 (E1) and the cross-sectional view of (E2), zigzag wiring films 24a and 24b other than both end portions of the structure are formed on the surface, and the semiconductor circuit chip 12 is formed. The surface silicon layer 23 ′ on which is formed is peeled from the silicon substrate 21 ′ and the silicon oxide film layer 22 ′. In addition, you may perform this peeling not using an adhesive material but using tweezers. In this way, as shown in the plan view of FIG. 2 (E1) and the cross-sectional view of (E2), the surface silicon layer 23 ′ and the zigzag wiring films 24a and 24b are formed on the opposite sides of the semiconductor circuit chip 12. The strain buffering structure portions 13a and 13b having one end connected to the terminal of the semiconductor circuit chip 12 are formed.

  Next, flexible wiring films 26a and 26b, a flexible sensor, a flexible battery, and the like (not shown) are formed on the surface, and spacers 27a and 27b made of an insulator such as plastic having a predetermined height are formed at predetermined positions on the surface. A flexible substrate 11 formed separately is prepared. The material of the flexible substrate 11 is, for example, a polyurethane-based or polyester-based stretchable resin. As shown in the plan view of FIG. 2 (F1) and the cross-sectional view of (F2), the semiconductor circuit chip 12 and the strain buffer structure portions 13a and 13b are formed on the flexible substrate 11 via spacers 27a and 27b. The main structure is implemented.

  Here, the spacers 27a and 27b are provided corresponding to the positions of the back surfaces of both end portions in the longitudinal direction of the surface silicon layer 23 ′, and the mounting of the main structure on the flexible substrate 12 is performed by using the spacers 27a and 27b. It adheres by a well-known method only between 27b and the back surface of the both ends of the longitudinal direction of surface layer silicon layer 23 '. Accordingly, the semiconductor circuit chip 12 connected to one end of both ends in the longitudinal direction of the strain buffering structures 13a and 13b is connected to the other end of both ends in the longitudinal direction of the strain buffering structures 13a and 13b. In this case, it is fixed to the flexible substrate 11 via the spacers 27a and 27b in a state where it floats by the height of the spacers 27a and 27b. That is, the semiconductor circuit chip 12 is elastically fixed and supported in a state where it is floated with respect to the flexible substrate 11 by the strain buffering structures 13a and 13b.

  Finally, as shown in the plan view of FIG. 2 (G1) and the cross-sectional view of (G2), the electrode pads of the flexible wiring films 26a and 26b formed on the flexible substrate 11 and the zigzag wiring film 24a, The conductive paste 28a, 28b is applied and electrically connected between the end portions of 24b by screen printing or the like, and the manufacture of the electronic device 10 is completed.

  According to the electronic device 10 of the present embodiment manufactured as described above, the strain buffer structure portions 13a and 13b for fixing the ultrathin semiconductor circuit chip 12 in a floating state with respect to the flexible substrate 11 include the semiconductor circuit chip. 12 is fixed at both ends, and the semiconductor circuit chip 12 is elastically fixed because the planar shape is a zigzag shape. For this reason, even if the flexible substrate 11 is bent, the semiconductor circuit chip 12 is almost stationary and is hardly transmitted as distortion to the semiconductor circuit chip 12. As a result, when the electronic device 10 of the present embodiment is used for, for example, a clothing-type wearable device, the semiconductor circuit chip 12 is almost affected by the bending of the flexible substrate 11 even if the clothing-type wearable is stretched or bent. In addition, accurate biological information detection and desired characteristics based thereon can be obtained, and the ultrathin semiconductor circuit chip 12 itself can be prevented from breaking.

(Second Embodiment)
Next, a second embodiment of the electronic device according to the present invention will be described with reference to the drawings.
3 (A1) to (D1) and (A2) to (D2) are element plan views at the time of each manufacturing process for explaining the manufacturing method (part 1) of the second embodiment of the electronic device according to the present invention. FIG. 4 (A1) to (D1) and (A2) to (D2) are cross-sectional views of the element, illustrating the manufacturing method (part 2) of the second embodiment of the electronic device according to the present invention. An element plan view and an element cross-sectional view are shown. 3 (B2) to (D2) are cross-sectional views taken along one-dot chain lines in FIGS. 3 (B1) to (D1). The manufacturing method of the present embodiment is a method for manufacturing a flexible substrate processing mold, and the electronic device 30 of the present embodiment is finally subjected to the manufacturing process of both FIG. 3 and FIG. 3 (D2), the wiring film 32a and 32b are formed of a flexible substrate 37 processed so as to have a strain buffer structure formed on the surface, and an ultrathin semiconductor circuit chip 40. Manufactured to structure.

  First, the flexible substrate 31 before processing shown in the plan view of FIG. 3A1 and the cross-sectional view of FIG. However, a flexible wiring film, a flexible sensor, a flexible battery, and the like are already formed on the surface of the flexible substrate 31. Next, after forming a conductive film on the surface of the flexible substrate 31, a known technique such as photolithography and etching is applied to the conductive film, and a plan view of FIG. 3 (B1) and a cross section of (B2). As shown in the figure, wiring films 32a and 32b having a zigzag plane from each end in the longitudinal direction and a plurality of electrode pads 33a and 33b are formed by patterning in a central area of a predetermined size. The ends of the wiring films 32 a and 32 b on the side edge side of the flexible substrate 31 are connected to the flexible wiring film of the flexible substrate 31. The central region having a predetermined size is a region assuming that a semiconductor circuit chip will be mounted later, and a plurality of electrode pads 33a and 33b in the region are connected to end portions of the wiring films 32a and 32b. Yes.

  Subsequently, as shown in the plan view of FIG. 3 (C1) and the cross-sectional view of (C2), the semiconductor circuit chip mounting rectangular area 34 provided in the central area of the predetermined size, and the rectangular area 34 A substrate portion having a shape in which two wiring films 32a and 32b whose planes are zigzag-shaped between the central portions of the two opposing sides and the rectangular frame 35 along the side edge portion of the flexible substrate 31 is left. The opening 36 is opened using, for example, a laser processing apparatus. Thus, the flexible substrate 31 is processed so as to have the opening 36 to become the flexible substrate 37. The zigzag-shaped portion of the flexible substrate 37 after the processing, on which the wiring films 32a and 32b are formed, constitutes a strain buffering structure.

  On the other hand, a silicon substrate 39 shown in the plan view of FIG. 4 (A1) and the cross-sectional view of (A2) is prepared separately from the manufacturing process of FIG. 3, and the plan view of FIG. As shown in the sectional view of B2), an extremely thin semiconductor circuit chip 40 is manufactured by a known method. The semiconductor circuit chip 40 is an IC chip in which a semiconductor integrated circuit (IC) such as a semiconductor signal processing circuit (including a microcomputer) or a wireless communication circuit is built. On the surface of the semiconductor circuit chip 40, electrode pads 41a and 41b which are connection terminals are formed.

  Subsequently, as shown by 39 ′ in the plan view of FIG. 4 (C1) and the cross-sectional view of (C2), a known etching method such as DRIE is applied to leave the thickness of the silicon substrate 39 to leave the semiconductor circuit chip 40. And thinning. Subsequently, as shown in the plan view of FIG. 4D1 and the cross-sectional view of FIG. 4D2, a dicing process is performed to remove the peripheral portion of the thinned silicon substrate 39 ′ while leaving the semiconductor circuit chip 40. Perform using a laser. Thereby, an extremely thin semiconductor circuit chip 40 is cut out from the silicon substrate 39 '. The silicon substrate 42 after the dicing process covers only the side surface of the semiconductor circuit chip 40.

  Then, in the rectangular region 34 on the surface of the flexible substrate 37 shown in the plan view of FIG. 3 (C1) and the cross-sectional view of (C2), the ultrathin semiconductor circuit chip 40 obtained by the manufacturing process of FIG. 3 As shown in the plan view of (D1) and the sectional view of (D2), bonding is performed face down. This bonding is performed by providing an alignment mark and observing with a microscope or the like so that the electrode pads 33a and 33b on the surface of the flexible substrate 37 and the electrode pads 41a and 41b which are terminals of the semiconductor circuit chip 40 are bonded. Executed after position adjustment. Thereby, the electronic device 30 of this embodiment is manufactured.

  According to the electronic device 30 of the present embodiment manufactured in this way, the zigzag-shaped formation portion on which the wiring films 32a and 32b of the flexible substrate 37 are formed constitutes a strain buffering structure portion, and one end is a square frame. The other end is connected to the electrode pad at the end of the semiconductor circuit chip 40, and the semiconductor circuit chip 40 is not in contact with the surface of the flexible substrate 37. Elastically fixed in a floating state. For this reason, even if the flexible substrate 37 is bent, the semiconductor circuit chip 40 is almost stationary and is hardly transmitted to the semiconductor circuit chip 40 as distortion. As a result, when the electronic device 30 of the present embodiment is used for, for example, a clothing-type wearable device, an accurate living body in which the semiconductor circuit chip 40 is not affected by the bending of the flexible substrate 37 even if the clothing-type wearable is stretched or bent. Information detection and desired characteristics based thereon can be obtained, and the ultrathin semiconductor circuit chip 40 itself can be prevented from breaking.

(Third embodiment)
Next, a third embodiment of the electronic device according to the present invention will be described with reference to the drawings.
5 (A1) to (D1) and (A2) to (D2) show a manufacturing method (No. 1) of the third embodiment of the electronic device according to the present invention. (A2) to (D2) show the manufacturing method (No. 2) of the third embodiment of the electronic device according to the present invention. FIGS. 7 (A1) to (C1) and (A2) to (C2) show the present method. The manufacturing method (the 3) of 3rd Embodiment of the electronic device which concerns on invention is shown by the element top view at the time of each manufacturing process which each demonstrates, and element sectional drawing. 5 (B2) to (D2) are cross-sectional views taken along one-dot chain lines in FIGS. 5 (B1) to (D1), and FIGS. 7 (A2) to (C2) are FIGS. 7 (A1) to (C1). ) Is a cross-sectional view taken along one-dot chain line. The manufacturing method of the present embodiment is an elastic substrate bonding type manufacturing method, which is an intermediate manufacturing method between the above-described SOI substrate integrated type and flexible substrate processing type. As shown in the plan view of FIG. 7 (C1) and the cross-sectional view of FIG. 7 (C2), the electronic device 50 manufactured in the present embodiment is finally subjected to the strain buffering structure portion by the manufacturing process of FIGS. The structure includes a flexible substrate 64 processed so as to have an ultrathin semiconductor circuit chip 60, and a strain buffering structure portion on which wiring films 52a and 52b are formed.

  Next, the manufacturing method of this embodiment is demonstrated with FIG. 5 thru | or FIG. First, an elastic substrate 51 shown in the plan view of FIG. 5A1 and the cross-sectional view of FIG. The elastic substrate 51 is a second flexible substrate made of a polyurethane-based or polyester-based flexible resin. The elastic substrate 51 is made up of a material and an elongation rate of the first flexible substrate 64, which will be described later, constituting the electronic device 50 of the present embodiment. Although the same, the elongation ratio may be slightly larger than the first flexible substrate 64 (may be slightly rigid). However, a flexible wiring film or a flexible battery is not formed on the elastic substrate 51.

  Subsequently, after a conductive film is formed on the surface of the elastic substrate 51, a known technique such as photolithography and etching is applied to the conductive film, and a plan view of FIG. 5B1 and a cross section of FIG. As shown in the figure, wiring films 52a and 52b having a zigzag plane from each end in the longitudinal direction and a plurality of electrode pads 53a and 53b are formed by patterning with respect to an area of a predetermined size in the center. The central region having a predetermined size is a region that is supposed to be mounted with a semiconductor circuit chip later. A plurality of electrode pads 53a and 53b are formed in the region, and the end portions of the wiring films 52a and 52b are formed. It is connected.

  Subsequently, as shown in the plan view of FIG. 5 (C1) and the cross-sectional view of (C2), the semiconductor circuit chip mounting rectangular area 54 provided in the central area of the predetermined size, and the rectangular area 54 A substrate portion having a shape in which the two zigzag wiring planes 52a and 52b are respectively connected between the central portions of the two opposing sides and the rectangular frame 55 along the side edge portion of the elastic substrate 51 is left. The opened opening 56 is opened using, for example, a laser processing apparatus. Thus, the elastic substrate 51 is processed so as to have the opening 56 to become an elastic substrate 57. The zigzag-shaped formed portion of the processed elastic substrate 57 on which the wiring films 52a and 52b are formed constitutes a strain buffer structure.

  Subsequently, as shown in the plan view of FIG. 5 (D1) and the cross-sectional view of (D2), from the rectangular frame 55 of the elastic substrate 57 after the processing, a rectangular region using an adhesive or tweezers. 54, the structure 58 having a shape in which the plane on which the wiring films 52a and 52b are formed is connected by two zigzag substrate portions is peeled off.

  On the other hand, separately from the manufacturing process of FIG. 5, a silicon substrate 59 shown in the plan view of FIG. 6A1 and the cross-sectional view of FIG. 6A2 is prepared, and the plan view of FIG. As shown in the sectional view of B2), an extremely thin semiconductor circuit chip 60 is manufactured by a known method. The semiconductor circuit chip 60 is an IC chip that incorporates a semiconductor integrated circuit (IC) of an electronic circuit such as a semiconductor signal processing circuit (including a microcomputer) or a wireless communication circuit. On the surface of the semiconductor circuit chip 60, electrode pads 61a and 61b which are connection terminals are formed.

  Subsequently, as shown by 59 ′ in the plan view of FIG. 6C1 and the cross-sectional view of FIG. 2C2, a known etching method such as DRIE is applied to leave the thickness of the silicon substrate 59 to leave the semiconductor circuit chip 60. And thinning. Subsequently, as shown in the plan view of FIG. 6D1 and the cross-sectional view of FIG. 6D2, a dicing process is performed to remove the peripheral portion of the thinned silicon substrate 59 ′ while leaving the semiconductor circuit chip 60. Perform using a laser. Thereby, an extremely thin semiconductor circuit chip 60 is cut out from the silicon substrate 59 '. The silicon substrate 62 after the dicing process covers only the side surface of the semiconductor circuit chip 60.

  Then, the ultrathin semiconductor circuit chip 60 obtained by the manufacturing process of FIG. 6 is faced to the rectangular region 54 on the surface of the elastic substrate 57 shown in the plan view of FIG. 5 (D1) and the cross-sectional view of (D2). The main structure shown in the plan view of FIG. 7A1 and the cross-sectional view of FIG. This bonding is performed by providing an alignment mark and observing with a microscope or the like so that the electrode pads 53a and 53b on the surface of the elastic substrate 57 and the electrode pads 61a and 61b which are terminals of the semiconductor circuit chip 60 are bonded. It is executed after the correct position adjustment.

  Subsequently, a main structure having a shape in which the semiconductor circuit chip 60 bonded to the rectangular region 54 is connected to each other by two substrate portions each having a zigzag shape on which the wiring films 52a and 52b are formed is illustrated in FIG. ) And a cross-sectional view of (B2), it is mounted on the flexible substrate 64 via spacers 65a and 65b made of an insulator such as plastic having a predetermined height. The flexible substrate 64 has a flexible wiring film, a flexible sensor, a flexible battery, and the like (not shown) formed on the surface, and spacers 65a and 65b are formed at predetermined positions on the surface, and the material is, for example, It is a polyurethane-based or polyester-based stretchable resin.

  Here, the spacers 65a and 65b are provided corresponding to the positions of the back surfaces of both ends in the longitudinal direction of the main structure, and the mounting of the main structure on the flexible substrate 64 is performed with the spacers 65a and 65b. It is fixed in a known manner only between the two. Therefore, in the semiconductor circuit chip 60, the two substrate portions each having the zigzag shape on the surface on which the wiring films 52a and 52b are formed are used as the strain buffer structure portions, respectively, and both end portions of the two strain buffer structure portions and the two spacers. It is fixed in a state where it floats by the height of the spacers 65a and 65b with respect to the surface of the flexible substrate 64 only through 27a and 27b. In other words, the semiconductor circuit chip 60 is elastically fixed and supported in a state of floating with respect to the flexible substrate 64 by the two strain buffering structures.

  Finally, as shown in the plan view of FIG. 7 (C1) and the sectional view of (C2), the ends of the flexible wiring films 63a and 63b and the zigzag wiring films 52a and 52b formed on the flexible substrate 64 are shown. The conductive pastes 66a and 66b are applied and electrically connected to each other by screen printing or the like, and the manufacture of the electronic device 50 is completed.

  According to the electronic device 50 of the present embodiment manufactured as described above, the two strain buffering structures (the wiring film 52a in the structure 58) that fixes the semiconductor circuit chip 60 in a floating state with respect to the flexible substrate 64. , 52b formed on the surface of the flat zigzag substrate portion) fixes only both ends of the semiconductor circuit chip 60, and the plane shape is zigzag, so that the semiconductor circuit chip 60 is elastically fixed. For this reason, even if the flexible substrate 64 is bent, the semiconductor circuit chip 60 is substantially stationary, and transmission to the semiconductor circuit chip 60 as strain can be greatly reduced. As a result, when the electronic device 50 of the present embodiment is used for, for example, a clothing-type wearable device, the semiconductor circuit chip 60 is almost affected by the bending of the flexible substrate 64 even if the clothing-type wearable is stretched or bent. In addition, accurate biological information detection and desired characteristics based thereon can be obtained, and the ultrathin semiconductor circuit chip 60 itself can be prevented from breaking.

  According to the manufacturing methods of the first to third embodiments described above, although there are differences in the manufacturing process and the material of the strain buffer structure, the end portions of the ultra-thin semiconductor circuit chips 12, 40, 60 are all used. Only in that they are elastically fixed by the strain buffering structure, and that the ultrathin semiconductor circuit chips 12, 40, 60 are not in direct contact with the flexible substrates 11, 37, 64. Thereby, the electronic device 10, 30, and 50 created by any manufacturing method can obtain the expected effect mentioned above. In the SOI substrate integrated manufacturing method of the first embodiment, the number of semiconductor circuit chips that can be manufactured on a single wafer (substrate) is obtained because the semiconductor circuit chip and the strain buffer structure are integrated on the same substrate. On the other hand, in the manufacturing methods of the second embodiment and the third embodiment, the semiconductor circuit chip is manufactured on a different substrate from the strain buffer structure portion, so that the semiconductor circuit chip that can be manufactured on one wafer (substrate) is produced. There is also an effect that the number can be increased and the unit price can be reduced. This is because the unit price of the semiconductor circuit chip is determined by how much can be incorporated into one wafer.

  Next, a wearable device using the electronic device according to the present invention will be described. FIG. 8 shows an overall configuration diagram of an example of a wearable device using the electronic device according to the present invention. In the figure, a wearable device 100 has a main structure 101 formed of a semiconductor circuit chip and a strain buffer structure of an electronic device according to the present invention formed on a flexible substrate 102. One end portion of the strain buffering structure portion having a zigzag planar shape constituting the main structure 101 is electrically connected to a terminal at an end portion of the semiconductor circuit chip constituting the same main structure 101 and a flexible substrate. It is elastically fixed in a separated state so as not to contact the surface of 102, and the other end is electrically connected to the flexible wiring film 103 formed on the surface of the flexible substrate 102. In addition, a flexible sensor / battery 104 or the like is formed on the flexible substrate 102. The wearable device 100 has a structure in which the upper surface of the main structure 101 mounted on the flexible substrate 102 is covered with a cover film 105 made of a resin such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET). The cover film 105 functions as a protective film.

  Next, a usage example of a wearable device using the electronic device according to the present invention will be described. FIG. 9 is a diagram showing a usage example of an example of a wearable device using the electronic device according to the present invention. In FIG. 9, an electronic device 100 configured as shown in FIG. 8 is worn at a set position of a shirt 150, for example, and wearable wearable devices that collect heart rate, breathing and other necessary human body information of the human body wearing the shirt 150 using a flexible sensor. Is configured. When the electronic device 100 according to the present invention is used for such a wearable wearable device, even if the flexible substrate (102 in FIG. 8) expands and contracts with the expansion and contraction of the shirt 150, the semiconductor circuit chip does not expand and contract the flexible substrate. Since it is hardly transmitted as distortion, human body information can be detected accurately.

  Next, an outline when the electronic device of the above-described embodiment is applied to a wearable device will be described. FIG. 10 is a schematic schematic configuration diagram when the first embodiment is applied to a wearable device, FIG. 11 is a schematic schematic configuration diagram when the second embodiment is applied to a wearable device, and FIG. The schematic model block diagram at the time of applying 3rd Embodiment to a wearable device is shown. 10, FIG. 11 and FIG. 12, the same components as those in FIG. 2, FIG. 3 and FIG. In the electronic device of the first embodiment, as shown schematically in FIG. 10, the entire lower surface of the flexible substrate 11 is bonded to a textile 160 of clothing. In the electronic device of the second embodiment, as schematically shown in FIG. 11, the end of the flexible substrate 37 is bonded to a textile 160 of clothing. However, the area where the semiconductor circuit chip 40 at the center of the flexible substrate 37 is mounted is not bonded to the surface of the textile 160 and is separated. In the electronic device of the third embodiment, the entire lower surface of the flexible substrate 64 is bonded to a clothing textile 160 as schematically shown in FIG. The textile 160 has, for example, an elongation rate of 1% to 10%.

  The present invention is not limited to the above embodiment. For example, the planar shapes of the strain buffering structures 13a and 13b are not limited to the zigzag shape, and only the end portions of the semiconductor circuit chips 12 and 36 are used. May be in other shapes, for example, an S shape shown in FIG. 13A or a mesh shape shown in FIG. In addition, there is a research report (CHLee, et al., “Soft Core / Shell Packages for Stretchable Electronics” that manufactures a flexible biosensor by holding an electronic circuit with an S-shaped strain buffer structure and covering it with a flexible substrate. "Advanced Matrerials, (2015) pp. 3698-3704). However, this method is different from the strain buffer structure portion of the present invention in that the semiconductor circuit chip is packaged and the semiconductor circuit chip is in direct contact with the flexible substrate.

  Further, the number of strain buffering structures that directly or indirectly fix and hold the end of the semiconductor circuit chip is not limited to two, and there may be a plurality of strain buffering structures. For example, as schematically shown in FIG. 14, three strain buffering structures 170 for fixing and holding the three end portions of the semiconductor circuit chip 170 may be provided. Further, as schematically shown in FIG. 15, there may be provided four strain buffering structures 190 for fixing and holding the four end portions of the semiconductor circuit chip 180. Further, as schematically shown in FIG. 16, nine mesh-shaped strain buffering structures 200 for separately fixing and holding the three end portions of each side of the semiconductor circuit chip 170 may be provided.

  It can be widely applied to fields where flexible electronic devices can be used, such as clothing-type wearable devices for health monitoring of humans and animals.

10, 30, 50 Electronic device 11, 64, 102 Flexible substrate 12, 40, 60, 170 Semiconductor circuit chip 13a, 13b, 180, 190, 200 Strain buffer structure 20 SOI substrate 21, 21 ′, 39, 39 ′, 42, 59, 59 'Silicon substrate 22, 22' Silicon oxide film layer 23, 23 'Surface silicon layer 24a, 24b, 32a, 32b, 52a, 52b Wiring film 25 Recess 26a, 26b, 63a, 63b, 103 Flexible wiring film 27a, 27b, 65a, 65b Spacers 28a, 28b, 66a, 66b Conductive paste 31 Flexible substrates 33a, 33b, 41a, 41b, 53a, 53b, 61a, 61b Electrode pads 34, 54 Rectangular regions 35, 55 before processing Square frame 36, 56 Opening 37 Flexible after processing Plate 51 elastic substrate (second flexible substrate)
57 Elastic substrate 58 after processing 58 Structure 100 Wearable device 101 Main structure 104 Flexible sensor, battery, etc. 150 Shirt

Claims (11)

A semiconductor circuit chip containing an electronic circuit having terminals formed on the surface;
A flexible substrate having at least a flexible wiring film and a flexible sensor formed on the surface;
A wiring film is formed on the surface, one end of the wiring film is connected to the terminal of the semiconductor circuit chip, and the other end of the wiring film is connected to the flexible wiring film, and the semiconductor circuit An electronic device comprising: a strain buffering structure having a structure in which an end portion of a chip is elastically fixed and supported in a state where the semiconductor circuit chip and the flexible substrate are separated from each other. The strain buffer structure is
A plurality of connection planes each having a predetermined shape, wherein a side edge portion of the semiconductor circuit chip formed on an ultrathin substrate different from the flexible substrate and an end portion of the ultrathin substrate are separately connected. The wiring film is formed on the substrate portion, and one end of the wiring film on one end of each of the plurality of connection substrate portions is electrically connected to a terminal of the semiconductor circuit chip, Only the other end of each of the plurality of connection substrate portions is elastically fixed and supported on the flexible substrate in a state where the semiconductor circuit chip and the flexible substrate are separated from each other, and the other end of the wiring film is connected to the flexible substrate. The electronic device according to claim 1, wherein the electronic device has a structure electrically connected to the flexible wiring film. The flexible substrate is
A substrate portion having a shape in which a plane is connected by a plurality of connection portions each having a predetermined shape between a rectangular region for mounting the semiconductor circuit chip and a rectangular frame along a side edge portion of the rectangular region and a substrate side edge portion is left. And at least a flexible wiring film and a flexible sensor are formed on the surface,
The strain buffer structure is
The wiring film is formed on the surface of the connection portion of the flexible substrate, and the semiconductor circuit chip mounted on the rectangular region of the flexible substrate is elastically fixed by the connection portion and the square frame. 2. The electronic device according to claim 1, wherein one end of the wiring film is connected to the terminal of the semiconductor circuit chip and the other end of the wiring film is connected to the flexible wiring film. The strain buffer structure is
The flexible substrate and the ultra-thin substrate on which the semiconductor circuit chip is formed are formed on different elastic substrates, and the elastic substrate has a rectangular area for mounting the semiconductor circuit chip and the rectangular area. A plane in which one end is connected to each side edge portion is composed of a plurality of connecting portions having a predetermined shape, and a wiring film is formed on the surface of the plurality of connecting portions, and one end of the wiring film is formed The semiconductor circuit chip is electrically connected to a terminal of the semiconductor circuit chip mounted on the rectangular area of the elastic substrate, and the other ends of the plurality of connection portions are separated from the semiconductor circuit chip on the flexible substrate via a spacer. The wiring film on the other end of the two connection portions and the flexible wiring film are electrically connected by a conductive member that covers the spacer. The electronic device of claim 1, wherein.   The electronic device according to claim 1, wherein the predetermined shape is a zigzag shape, an S shape, or a mesh shape. Producing a semiconductor circuit chip containing an electronic circuit having terminals formed on the surface;
Producing a flexible substrate having at least a flexible wiring film and a flexible sensor formed on the surface;
The strain buffer structure having a structure in which a wiring film is formed on the surface connects one end of the wiring film to the terminal of the semiconductor circuit chip and connects the other end of the wiring film to the flexible wiring film. And a fixing step of elastically fixing and supporting an end portion of the semiconductor circuit chip in a state where the semiconductor circuit chip and the flexible substrate are separated from each other. The step of producing the semiconductor circuit chip is a step of producing the semiconductor circuit chip on a very thin substrate different from the flexible substrate,
The fixing step includes
The plane is a predetermined shape, and a wiring film is formed on the surface, and a plurality of connecting portions in which one end of the wiring film is electrically connected to the terminal of the semiconductor circuit chip separately. A connecting portion forming step to be formed on an extremely thin substrate;
The ultrathin substrate portion in which the other end of the wiring film of each of the plurality of connecting portions is electrically connected to the flexible wiring film and the other end of the wiring film of the plurality of connecting portions is formed. The method of manufacturing an electronic device according to claim 6, further comprising a step of fixing the semiconductor circuit chip and the flexible substrate in a separated state. The connecting portion forming step includes
Forming a plurality of wiring films having a predetermined shape on a silicon substrate, one end of which is separately connected to the terminal of the semiconductor circuit chip and the other end of which is open;
Etching from the back side of the silicon substrate on which the semiconductor circuit chip and the wiring film are formed, respectively, to leave the semiconductor circuit chip, and to form a recess in which the silicon substrate portion on which the plurality of wiring films are formed remains thin Forming a step;
The thin silicon substrate having the semiconductor circuit chip and the plurality of wiring films formed on the surface is peeled from the silicon substrate having the recesses formed thereon, and the thin silicon having the plurality of wiring films formed on the surface And a step of obtaining a substrate portion as a plurality of connecting portions on the ultra-thin substrate,
The step of fixing the semiconductor circuit chip and the flexible substrate in a separated state,
Fixing only the ultrathin substrate portion directly below each end of the plurality of wiring films via a spacer in a state of being separated from the surface of the flexible substrate;
The method of manufacturing an electronic device according to claim 7, further comprising a step of electrically connecting the flexible wiring film and each end of the plurality of wiring films with a conductive member. The step of producing the flexible substrate includes:
With respect to the unprocessed flexible substrate having at least a flexible wiring film and a flexible sensor formed on the surface, a rectangular region for mounting the semiconductor circuit chip, a side edge of the rectangular region, and a square frame along the substrate side edge An opening that leaves a plurality of connecting portions in a shape in which the plane is a predetermined shape and the wiring film is formed on the surface, and one end of the wiring film is electrically connected to the flexible wiring film. Forming a flexible substrate processed by forming a portion,
The fixing step includes
Mounting the semiconductor circuit chip in the rectangular region of the processed flexible substrate so that a terminal of the semiconductor circuit chip is electrically connected to the other end of each wiring film of the plurality of connection portions; 7. The method of manufacturing an electronic device according to claim 6, wherein the semiconductor circuit chip is elastically fixed and supported by the plurality of connection portions and the square frame. The fixing step includes
The flexible substrate and the elastic substrate different from the ultra-thin substrate on which the semiconductor circuit chip is formed have a rectangular region for mounting the semiconductor circuit chip, and one end at each side edge of the rectangular region. A step of forming a plurality of connecting portions in which the connected plane has a predetermined shape and a wiring film is formed on the surface;
Mounting the semiconductor circuit chip in the rectangular region so that terminals of the semiconductor circuit chip formed on the ultra-thin substrate are electrically connected to one end of each wiring film of the plurality of connecting portions. When,
The other end of the plurality of connection portions is elastically fixed and supported in a state separated from the semiconductor circuit chip on the flexible substrate via a spacer, and the wiring film on the other end of the plurality of connection portions; The method of manufacturing an electronic device according to claim 6, further comprising a step of electrically connecting the flexible wiring film with a conductive member covering the spacer. The method of manufacturing an electronic device according to claim 6, wherein the predetermined shape is a zigzag shape, an S shape, or a mesh shape.

Images