JP2017038021A - Substrate processing method and liquid supply substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance throughput of substrate processing, by performing positional adjustment of a processed substrate and a liquid supply substrate appropriately.SOLUTION: From a template 20 placed oppositely to a wafer 10, alignment liquid is supplied to a first region A1 between the wafer 10 and template 20. The first region A1 is filled with the alignment liquid, and positional adjustment of the template 20 is performed for the wafer 10, by surface tension of the alignment liquid generated on the gas-liquid interface formed the periphery of the first region. The alignment liquid in the first region A1 is made to be spilled to a second region A2. The first region A1 and second region A2 are filled with the alignment liquid (mixture). In a state where the distance between the wafer 10 and template 20 is a predetermined distance, the surface of the wafer 10 is subjected to predetermined processing.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a substrate processing method for performing predetermined processing on a surface of a substrate to be processed, and a liquid supply substrate used in the substrate processing method.

  In recent years, higher performance of semiconductor devices is required, and higher integration of semiconductor devices is progressing. Under such circumstances, when a semiconductor device is manufactured by arranging a plurality of highly integrated semiconductor devices in a horizontal plane and connecting these semiconductor devices with wiring, the wiring length increases, thereby increasing the resistance of the wiring. In addition, there is a concern that the wiring delay becomes large.

  Therefore, a three-dimensional integration technique for stacking semiconductor devices in three dimensions has been proposed. In this three-dimensional integration technology, for example, a fineness of 100 μm or less is formed so as to penetrate a semiconductor wafer (hereinafter referred to as “wafer”) thinned by polishing the back surface and having a plurality of electronic circuits formed on the front surface. A plurality of so-called through electrodes (TSV: Through Silicon Via) having a large diameter are formed. And the wafer laminated | stacked up and down is electrically connected through this penetration electrode.

  Various methods for forming the above-described through electrode have been studied. For example, Patent Document 1 proposes that a through electrode is formed by performing electroplating in a through hole of a wafer, for example, using a template having a flow path such as a plating solution. Specifically, first, after supplying the alignment liquid (pure water) to the alignment area on the wafer surface, the template is placed facing the wafer, and a restoring force is applied to the template by the surface tension of the alignment liquid. Adjust the position of the template and wafer. After that, a plating solution is supplied from the flow path of the template into the through hole of the wafer by capillary action, and a voltage is applied with the electrode on the template side as the anode and the counter electrode on the wafer side as the cathode, and the plating process is performed in the through hole. A through electrode is formed in the through hole.

JP2013-108111A

  By the way, when performing a predetermined process using a template, depending on the content of the process, after performing the position adjustment with the alignment liquid, the predetermined process may be performed after removing the used alignment liquid. The alignment liquid may be completely removed until the distance between the template and the wafer becomes zero, or the alignment liquid may be extracted until the distance between the template and the wafer reaches a predetermined distance. However, the method described in Patent Document 1 described above does not consider the removal of the alignment liquid, and is currently naturally dried. Natural drying takes a lot of time and there is room for improvement in the throughput of wafer processing.

  SUMMARY An advantage of some aspects of the invention is that it appropriately adjusts the positions of a substrate to be processed (wafer) and a liquid supply substrate (template) to improve the throughput of substrate processing.

  In order to achieve the above object, the present invention provides a substrate processing method for performing a predetermined process on the surface of a substrate to be processed, wherein the substrate to be processed and a liquid are supplied from a liquid supply substrate disposed opposite to the substrate to be processed. A first step of supplying an alignment liquid to a first region between the supply substrates; and a gas-liquid formed in a peripheral portion of the first region by filling the first region with the alignment liquid. A second step of adjusting the position of the liquid supply substrate with respect to the substrate to be processed by the surface tension of the alignment liquid generated at the interface; and the substrate to be processed and the liquid in the first region. A third step of flowing out to a second region outside or inside the first region between the supply substrates; and a fourth step of filling the alignment liquid into the first region and the second region. Process and said treatment In a state where between the substrate and the liquid supply substrate becomes a predetermined distance, it is characterized by having a fifth step of performing a predetermined process on the surface of the substrate to be processed.

  According to the present invention, in the second step, the restoring force for moving the liquid supply substrate acts by the surface tension of the alignment liquid at the gas-liquid interface in the first region, and the position adjustment of the liquid supply substrate with respect to the substrate to be processed Is performed with high accuracy. In the third step and the fourth step, the alignment liquid flows out from the first region to the second region and is filled in the first region and the second region. The distance between the substrate to be processed and the liquid supply substrate is reduced. Then, in the fifth step, it is possible to appropriately perform a predetermined process on the surface of the substrate to be processed while maintaining a predetermined distance between the substrate to be processed and the liquid supply substrate. As described above, in the present invention, the alignment liquid is drained by a simple method (the third step and the fourth step), and the liquid draining is required as compared with the case of natural drying as in the prior art. You can save time. Therefore, the throughput of substrate processing can be improved.

  When the second region is outside the first region, a first pattern is formed at a position corresponding to the first region on the surface of the substrate to be processed and the surface of the liquid supply substrate. And a second pattern is formed at a position corresponding to the second region on the surface of the substrate to be processed and the surface of the liquid supply substrate. In the second step, The gas-liquid interface at the peripheral edge is formed at the peripheral edge of the first pattern, and the surface tension of the alignment liquid generated at the gas-liquid interface formed at the peripheral edge of the second pattern in the fourth step. Thus, the position adjustment of the liquid supply substrate relative to the substrate to be processed may be performed again.

  In such a case, an alignment liquid supply hole for supplying the alignment liquid is formed in the first pattern of the liquid supply substrate, and the liquid supply substrate has a gap between the first pattern and the second pattern. An introduction liquid supply hole for supplying the introduction liquid is formed, and in the third step, the alignment liquid in the first region is transferred to the second region by the introduction liquid supplied from the introduction liquid supply hole. May flow out.

  An alignment liquid supply hole for supplying the alignment liquid is formed in the first pattern of the liquid supply substrate, and an introduction liquid supply for supplying an introduction liquid to the second pattern of the liquid supply substrate. A hole is formed, and in the third step, the alignment liquid in the first area may flow out to the second area by the introduction liquid supplied from the introduction liquid supply hole.

  Further, a plurality of pairs of the first pattern and the second pattern are formed on the surface of the liquid supply substrate, and the introduction liquid supply hole is formed of a plurality of pairs of the first pattern and the second pattern. Of these, only the first pattern and the second pattern in the center are formed. In the third step, the first pattern and the second pattern in the center are supplied from the introduction liquid supply hole. Due to the introduced liquid, the alignment liquid in the first region flows out to the second region, and pressure acts in a direction to reduce the space between the substrate to be processed and the liquid supply substrate, and the surrounding first In the second pattern and the second pattern, the alignment liquid in the first region may flow into the second region by the pressure.

  On the other hand, when the second region is inside the first region, a pattern is formed at a position corresponding to the first region on the surface of the substrate to be processed and the surface of the liquid supply substrate. In the second step, the gas-liquid interface at the peripheral portion of the first region may be formed at the peripheral portion of the pattern.

  In this case, an alignment liquid supply hole for supplying the alignment liquid is formed in the pattern of the liquid supply substrate, and an introduction liquid for supplying an introduction liquid is provided at a position corresponding to the second region on the liquid supply substrate. A liquid supply hole is formed, and in the third step, the alignment liquid in the first region may flow out to the second region by the introduction liquid supplied from the introduction liquid supply hole.

  Further, a plurality of the patterns are formed on the surface of the liquid supply substrate, and the introduction liquid supply hole is formed only in the central pattern among the plurality of patterns. In the pattern, the alignment liquid in the first area flows out to the second area by the introduction liquid supplied from the introduction liquid supply hole, and the space between the substrate to be processed and the liquid supply substrate is reduced. Pressure acts in the direction, and in the surrounding pattern, the alignment liquid in the first region may flow out to the second region due to the pressure.

  Further, the pattern of the substrate to be processed and the pattern of the liquid supply substrate each have an annular shape and have corners, and in the third step, the alignment liquid in the first region is You may flow out to the 2nd field from the corner.

  A drain hole for discharging the liquid between the substrate to be processed and the liquid supply substrate is formed at a position corresponding to the second region in the liquid supply substrate, and after the fourth step, Before the fifth step, the liquid between the substrate to be processed and the liquid supply substrate may be discharged from the drain hole by a capillary force.

  In this case, a drainage tank for storing the liquid discharged from the drainage hole is connected to the drainage hole, and the substrate to be processed is after the fourth step and before the fifth step. And the liquid supply substrate may be discharged to the drainage tank via the drainage hole by capillary force.

  According to another aspect of the present invention, there is provided a liquid supply substrate that is disposed to face a substrate to be processed and is used when performing a predetermined process on the surface of the substrate to be processed, and a first pattern formed on the surface; An annular second pattern formed on the surface and provided outside the first pattern, and formed in the first pattern, and supplying alignment liquid between the substrate to be processed and the liquid supply substrate. And an alignment liquid supply hole.

  The liquid supply substrate is formed between the first pattern and the second pattern, and further includes an introduction liquid supply hole for supplying an introduction liquid between the substrate to be processed and the liquid supply substrate. Also good.

  The liquid supply substrate may further include an introduction liquid supply hole that is formed in the second pattern and supplies an introduction liquid between the substrate to be processed and the liquid supply substrate.

The liquid supply substrate has a plurality of pairs of the first pattern and the second pattern,
The introduction liquid supply hole may be formed only in the first pattern and the second pattern in the center among the plurality of pairs of the first pattern and the second pattern.

  The liquid supply substrate may further include a drain hole that is formed between the first pattern and the second pattern and that discharges the liquid between the substrate to be processed and the liquid supply substrate. .

  The liquid supply substrate may further include a drain tank that is connected to the drain hole and stores the liquid discharged from the drain hole.

  According to another aspect of the present invention, there is provided a liquid supply substrate that is disposed so as to face a substrate to be processed and performs predetermined processing on the surface of the substrate to be processed, and an annular pattern formed on the surface; An alignment liquid supply hole is formed in the pattern and supplies an alignment liquid between the substrate to be processed and the liquid supply substrate.

  The liquid supply substrate may further include an introduction liquid supply hole that is formed inside the pattern and supplies an introduction liquid between the substrate to be processed and the liquid supply substrate.

  The liquid supply substrate may include a plurality of the patterns, and the introduction liquid supply hole may be formed only in the central pattern among the plurality of patterns.

  The pattern may have a corner.

  The liquid supply substrate may further include a drain hole that is formed inside the pattern and discharges the liquid between the substrate to be processed and the liquid supply substrate.

  The liquid supply substrate may further include a drain tank that is connected to the drain hole and stores the liquid discharged from the drain hole.

  According to the present invention, it is possible to appropriately adjust the positions of the substrate to be processed and the liquid supply substrate and improve the throughput of the substrate processing.

It is a top view which shows the outline of a structure of the wafer concerning 1st Embodiment. It is a top view which shows the outline of a structure of the template concerning 1st Embodiment. It is sectional drawing which shows the outline of a structure of the wafer and template concerning 1st Embodiment. It is a top view which shows the outline of a structure of the template concerning 1st Embodiment. It is a top view which shows the outline of a structure of the drainage tank concerning 1st Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 1st Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 1st Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 1st Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 1st Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 1st Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 1st Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 1st Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 1st Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 1st Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 1st Embodiment. It is sectional drawing which shows the outline of a structure of the wafer and template concerning 2nd Embodiment. It is a top view which shows the outline of a structure of the template concerning 2nd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 2nd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 2nd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 2nd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 2nd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 2nd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 2nd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 2nd Embodiment. It is sectional drawing which shows the outline of a structure of the wafer and template concerning 3rd Embodiment. It is a top view which shows the outline of a structure of the template concerning 3rd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 3rd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 3rd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 3rd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 3rd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 3rd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 3rd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in 3rd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in the modification of 3rd Embodiment. It is explanatory drawing which shows a mode that a wafer process is performed in the modification of 3rd Embodiment. It is a top view which shows the outline of a structure of the template concerning the modification of 1st Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in this specification and drawing, about the component which has the substantially same function structure, duplication description is abbreviate | omitted by attaching | subjecting the same code | symbol. In the drawings, the dimensions of each component do not necessarily correspond to actual dimensions in order to prioritize easy understanding of the technology.

<1. First Embodiment>
First, a first embodiment of the present invention will be described. FIG. 1 is a plan view schematically showing the configuration of a semiconductor wafer (hereinafter referred to as “wafer”) as a substrate to be processed according to the first embodiment, and FIG. 2 is a liquid supply substrate according to the first embodiment. It is a top view which shows the outline of a structure of the template as.

  As shown in FIG. 1, a plurality of first patterns 11 and a plurality of second patterns 12 are formed on the surface 10a of the wafer 10, respectively. The first pattern 11 is, for example, a semiconductor chip on which an electronic circuit is formed. The second pattern 12 is a pattern formed in an annular shape outside the first pattern 11, and the outer edge portion and the inner edge portion are each formed in a square shape. The second pattern 12 is formed of a resist, for example, by performing a photolithography process and an etching process at once.

  As shown in FIG. 2, the template 20 has a substantially disk shape, for example, and has the same shape as that of the wafer 10 in plan view. For example, silicon carbide (SiC) or the like is used for the template 20.

  A plurality of first patterns 21 and a plurality of second patterns 22 are formed on the surface 20 a of the template 20. The first pattern 21 has the same shape as the first pattern 11 of the wafer 10. The second pattern 22 is a pattern formed in an annular shape outside the first pattern 21, and has the same shape as the second pattern 12 of the wafer 10. The patterns 21 and 22 can be collectively formed by performing a photolithography process and an etching process, for example.

  The number and arrangement of the first patterns 11 and 21 and the second patterns 12 and 22 are not limited to the illustrated example, and are arbitrarily designed.

  As shown in FIG. 3, the first patterns 11 and 21 face each other and the second patterns 12 and 22 face each other with the wafer 10 and the template 20 facing each other. In FIG. 3, a pair of first patterns 11 and 21 and a pair of second patterns 12 and 22 are illustrated, but in practice, all the first patterns 11 and 21 face each other, and all the first patterns 11 and 21 face each other. Two patterns 12 and 22 face each other.

  In the following description, as shown in FIG. 3, between the wafer 10 and the template 20 (hereinafter sometimes referred to as “gap C”), the area corresponding to the first patterns 11 and 21 is defined as the first area A1. That's it. A region formed in an annular shape outside the first region A1 is referred to as a second region A2, and the second patterns 12 and 22 are formed in the peripheral portion of the second region A2.

  As shown in FIGS. 3 and 4, an alignment liquid supply hole 23 is formed in the template 20. The alignment liquid supply hole 23 is formed to penetrate from the first pattern 21 on the front surface 20a to the back surface 20b. The alignment liquid is supplied from the alignment liquid supply hole 23 to the first region A1. For example, pure water is used as the alignment liquid.

  In addition, an introduction liquid supply hole 24 is formed in the template 20. The introduction liquid supply hole 24 is formed to penetrate from the front surface 20a to the back surface 20b between the first patterns 11 and 21 and the second patterns 12 and 22 in the second region A2 (near the first region A1). Has been. Then, the introduction solution is supplied from the introduction solution supply hole 24 to the second region A2, and the alignment solution in the first region A1 flows out to the second region A2 by this introduction solution as will be described later. . For example, pure water is used as the introduction liquid.

  Further, a drainage hole 25 is formed in the template 20. The drainage hole 25 is formed between the first pattern 11 and 21 and the second pattern 12 and 22 in the second region A2 so as to penetrate from the front surface 20a to the back surface 20b. The drainage hole 25 is a hole for discharging the mixed liquid of the alignment liquid and the introduction liquid from the gap C in the first area A1 and the second area A2. The liquid mixture is discharged from the gap C to the drainage hole 25 by capillary action. For this reason, the diameter of the drainage hole 25 is smaller than the distance of the gap C when the gap C is filled with the liquid mixture. . Specifically, the diameter of the drain hole 25 is, for example, 40 μm.

  A drainage tank 26 provided on the back surface 20 b is connected to the drainage hole 25. As shown in FIG. 6, the drainage tank 26 has a narrow groove structure branched from the drainage hole 25 into a plurality of narrow grooves 26a. The liquid mixture is discharged from the drainage hole 25 to the drainage tank 26 by capillary action, and therefore the width of the narrow groove 26 a in plan view is smaller than the diameter of the drainage hole 25. Specifically, the width of the narrow groove 26a is, for example, 30 μm. The depth of the narrow groove 26a is, for example, 150 μm.

  The drainage tank 26 is a tank capable of storing the mixed liquid discharged from the gap C, and has a predetermined capacity for storing the mixed liquid. That is, the capacity of the drainage tank 26 is larger than the total amount of the alignment liquid and the introduction liquid supplied from the template 20. Therefore, all of the liquid mixture filled in the gap C is discharged to the drainage tank 26.

  Note that specific dimensions of the diameter of the drain hole 25 and the width of the narrow groove 26a can be calculated using a well-known Laplace equation or can be derived through simulations or experiments. .

  Moreover, the structure inside the drainage tank 26 is not limited to this, and can be designed arbitrarily. For example, the drainage tank 26 may be composed of a porous body. Capillary action acts on the mixed liquid that has entered the porous body through the drainage tank 26. Since the porous body also absorbs the mixed solution so that the sponge absorbs water, it plays a role of pumping the mixed solution from the drainage tank 26.

  Thus, the liquid mixture in the gap C is discharged to the drainage tank 26 through the drainage hole 25 by capillary action. Therefore, the liquid mixture can be discharged without using an external force such as a pump.

  In the template 20, the alignment liquid supply hole 23, the introduction liquid supply hole 24, the drainage hole 25, and the drainage tank 26 may be simultaneously formed by, for example, a photolithography process and an etching process.

  Next, wafer processing using the wafer 10 and the template 20 configured as described above will be described.

  First, as shown in FIG. 6, the wafer 10 and the template 20 are arranged to face each other. At this time, the first pattern 11 of the wafer 10 and the first pattern 21 of the template 20 are arranged to face each other. The first patterns 11 and 21 do not need to correspond exactly. As shown in FIG. 6, even when these positions are slightly deviated, the positions of the wafer 10 and the template 20 are adjusted in the process described later.

  Further, the template 20 is arranged by a holding mechanism (not shown). By this holding mechanism, the template 20 is held at a predetermined height so that a gap C with an appropriate interval is formed. The holding mechanism is not particularly limited as long as it can hold the template 20. For example, there is a method of securing a fixed gap between the template 20 and the wafer 10 by separately providing a convex pattern protruding from the patterns 21 and 22 on the surface 20 a side of the template 20.

  Thereafter, the alignment liquid P is supplied to a position corresponding to the alignment liquid supply hole 23 on the back surface 20 b of the template 20. The alignment liquid P is supplied to the first region A1 of the gap C through the alignment liquid supply hole 23 by, for example, the Laplace pressure of the alignment liquid P on the back surface 20b. As shown in FIGS. 6 and 7, the alignment liquid P supplied to the first region A1 diffuses the first region A1 by capillary action, but the first pattern 11, 21 pinning effect causes the first region A1 to diffuse. No diffusion into the second area A2. Then, the alignment liquid P is filled in the first region A1, and the gas-liquid interface F1 is formed in the peripheral portion of the first region A1 (peripheral portions of the first patterns 11 and 21). During the formation of the gas-liquid interface F1, the template 20 is held in a state where a predetermined height is maintained by the holding mechanism.

  When the gas-liquid interface F1 is formed at the peripheral edge of the first region A1, the holding of the template 20 by the holding mechanism is released. Then, as shown in FIG. 8, the restoring force (arrow in FIG. 8) that moves the template 20 acts on the template 20 by the surface tension of the alignment liquid P at the gas-liquid interface F1. In this case, even when the positions of the first patterns 11 and 21 are shifted, the template 20 moves so that the first patterns 11 and 21 face each other, and the position adjustment between the wafer 10 and the template 20 can be performed with high accuracy. Done. Thus, the first patterns 11 and 21 function as an alignment pattern.

  Thereafter, as shown in FIG. 9, the introduction liquid Q is supplied to a position facing the introduction liquid supply hole 24 on the back surface 20 b of the template 20. The introduction liquid Q is supplied to the second region A2 of the gap C through the introduction liquid supply hole 24 by, for example, the Laplace pressure of the introduction liquid Q on the back surface 20b. As shown in FIGS. 9 and 10, the introduction liquid Q supplied to the second region A2 diffuses the second region A2 by capillary action. The introduction liquid Q diffused to the peripheral edge of the first area A1 functions as a so-called priming water, that is, the alignment liquid P in the first area A1 is broken by the surface tension of the introduction liquid Q, and the second area A2. To leak. The alignment liquid P flowing out from the first area A1 and the introduction liquid Q supplied from the introduction liquid supply hole 24 are mixed in the second area A2, and the mixture M diffuses in the second area A2. To do.

  As shown in FIGS. 11 and 12, the mixed solution M diffuses in the second region A2 by capillary action, but diffuses outside the second region A2 by the pinning effect of the second patterns 12 and 22. There is nothing. Then, the mixed liquid M is filled in the first region A1 and the second region A2, and the gas-liquid interface F2 is formed in the peripheral portion of the second region A2 (peripheral portions of the second patterns 12 and 22). .

  When the gas-liquid interface F2 is formed in the peripheral portion of the second region A2, a restoring force that moves the template 20 acts on the template 20 due to the surface tension of the mixed liquid M at the gas-liquid interface F2. Thereby, the position adjustment of the wafer 10 and the template 20 is performed again. That is, the second patterns 12 and 22 function as a shift prevention pattern between the wafer 10 and the template 20.

  Thereafter, as shown in FIGS. 13 and 14, the mixed solution M is discharged from the gap C through the drain hole 25 to the drain tank 26 by capillary action. As described above, since the capacity of the drainage tank 26 is larger than the amount of the mixed liquid M filled in the gap C, all the mixed liquid M in the gap C is discharged to the drainage tank 26 as shown in FIG. The That is, in the present embodiment, the predetermined distance between the wafer 10 and the template 20 is 0 (zero).

  Thereafter, a predetermined process is performed on the wafer 10 in a state where the mixed liquid M in the gap C is completely discharged. This predetermined process is arbitrary. For example, the predetermined process includes a plating process. Specifically, a plating solution is supplied from the template 20 to a through hole (not shown) formed outside the second region A2, and electrolytic plating is performed. Thus, a through electrode is formed in the through hole. At this time, since the position adjustment of the wafer 10 and the template 20 is appropriately performed, the plating solution can be supplied to the through hole with high positional accuracy, and the plating process can be appropriately performed.

  According to the first embodiment described above, after adjusting the position of the wafer 10 and the template 20 by the surface tension of the alignment liquid P at the gas-liquid interface F1 at the peripheral edge of the first region A1, the introduction liquid Q is added. Used as priming water, the alignment liquid P in the first area A1 is allowed to flow out into the second area A2. Here, the inventors pressurize the alignment liquid P under a load in order to cause the alignment liquid P to flow out from the first area A1 to the second area A2 (to drain the alignment liquid P). In addition, the alignment liquid P was evacuated to try to reduce the pressure. As a result, it has been found that when the alignment liquid P is pressurized or depressurized, the positions of the wafer 10 and the template 20 may shift. In this regard, according to the present embodiment, the alignment liquid P in the first area A1 breaks down due to the surface tension of the introduction liquid Q and flows out into the second area A2. In such a case, the alignment liquid P is neither pressurized nor depressurized, so that the positional deviation between the wafer 10 and the template 20 can be suppressed.

  Further, after adjusting the position of the wafer 10 and the template 20 by the surface tension of the alignment liquid P at the gas-liquid interface F1 at the peripheral edge of the first area A1, the gas-liquid interface at the peripheral edge of the second area A2 is further adjusted. The position adjustment of the wafer 10 and the template 20 is performed again by the surface tension of the mixed liquid M in F2. Thus, since the position adjustment of the wafer 10 and the template 20 is performed in two stages, the position adjustment can be performed with high accuracy.

  The liquid mixture M (alignment liquid P and introduction liquid Q) in the gap C is drained by a simple method of draining from the drain hole 25 and the drain tank 26 using a capillary phenomenon. The time required for draining can be shortened as compared with the case of natural drying as in the prior art. Therefore, the throughput of wafer processing can be improved.

<2. Second Embodiment>
Next, a second embodiment of the present invention will be described. 16 and 17 schematically show the configuration of the wafer 10 and the template 20 according to the second embodiment.

  In the template 20 of the first embodiment, the introduction liquid supply hole 24 was formed between the first patterns 11 and 21 and the second patterns 12 and 22 in the second region A2, whereas the second In the template 20 of the embodiment, the introduction liquid supply hole 24 is formed in the second pattern 22. That is, the introduction liquid supply hole 24 is formed so as to penetrate from the second pattern 22 on the front surface 20a to the back surface 20b. Accordingly, the shape of the second pattern 22 of the template 20 is increased so that the introduction liquid supply hole 24 is formed, and the shape of the second pattern 12 of the wafer 10 is also the second pattern of the template 20. This is the same as the shape of 22.

  The other configurations of the wafer 10 and the template 20 of the second embodiment are the same as the other configurations of the wafer 10 and the template 20 of the first embodiment, and thus the description thereof is omitted.

  Next, wafer processing using the wafer 10 and the template 20 configured as described above will be described.

  First, as shown in FIG. 18, the template 20 is arranged to face the wafer 10 by a holding mechanism (not shown), and the first pattern 11 of the wafer 10 and the first pattern 21 of the template 20 are made to face each other.

  Thereafter, the alignment liquid P is supplied to a position corresponding to the alignment liquid supply hole 23 on the back surface 20 b of the template 20. The alignment liquid P is supplied to the first region A1 of the gap C through the alignment liquid supply hole 23 by, for example, the Laplace pressure of the alignment liquid P on the back surface 20b. As shown in FIGS. 18 and 19, the alignment liquid P supplied to the first region A1 diffuses the first region A1 by capillary action, but the first pattern 11, 21 pinning effect causes the first region A1 to diffuse. No diffusion into the second area A2. Then, the alignment liquid P is filled in the first region A1, and the gas-liquid interface F1 is formed in the peripheral portion of the first region A1 (peripheral portions of the first patterns 11 and 21). During the formation of the gas-liquid interface F1, the template 20 is held in a state where a predetermined height is maintained by the holding mechanism.

  When the gas-liquid interface F1 is formed at the peripheral edge of the first region A1, the holding of the template 20 by the holding mechanism is released. Then, the restoring force for moving the template 20 acts on the template 20 due to the surface tension of the alignment liquid P at the gas-liquid interface F1, and the position adjustment between the wafer 10 and the template 20 is performed with high accuracy. The operation up to this point is the same as in the first embodiment.

  Thereafter, as shown in FIG. 20, the introduction liquid Q is supplied to a position corresponding to the introduction liquid supply hole 24 on the back surface 20 b of the template 20. The introduction liquid Q is supplied to the second region A2 of the gap C through the introduction liquid supply hole 24 by, for example, the Laplace pressure of the introduction liquid Q on the back surface 20b. As shown in FIGS. 20 and 21, the introduction liquid Q supplied to the second region A2 diffuses in the second region A2 by capillary action. The introduction liquid Q does not diffuse outside and inside the second patterns 12 and 22 due to the pinning effect of the second patterns 12 and 22. Then, the introduction liquid Q is filled in the second region A2, and the gas-liquid interface F2 is formed at the peripheral portions (outer edge portion and inner edge portion) of the second patterns 12 and 22.

  When the gas-liquid interface F2 is formed in the second patterns 12 and 22, a restoring force that moves the template 20 acts on the template 20 due to the surface tension of the mixed liquid M at the gas-liquid interface F2. Thereby, the position adjustment of the wafer 10 and the template 20 is performed again.

  Here, in the second patterns 12 and 22, in the corner portions 12a and 22a of the outer edge portions, the convex direction of the corner portions 12a and 22a and the convex direction of the introduction liquid Q are the same direction. For this reason, the direction of the Laplace pressure of the introduction liquid Q is the same, and the introduction liquid Q is difficult to break from the corner portions 12a and 22a. Therefore, the introduction liquid Q does not flow out of the second patterns 12 and 22.

  On the other hand, in the corners 12b and 22b at the inner edges of the second patterns 12 and 22, the convex direction of the corners 12b and 22b and the convex direction of the introduction liquid Q are opposite to each other. For this reason, the Laplace pressure direction of the introduction liquid Q is opposite, and the introduction liquid Q is easily broken from the corners 12b and 22b. Therefore, as shown in FIGS. 22 and 23, the introduction liquid Q breaks at the corners 12 b and 22 b and flows out to the inside of the second patterns 12 and 22. In order to break the introduction liquid Q in this manner, for example, conditions such as the contact angle of the alignment liquid P of the introduction liquid Q may be adjusted.

  The introduction liquid Q diffuses inside the second patterns 12 and 22 in the second region A2. The introduction liquid Q diffused to the peripheral edge of the first area A1 functions as a so-called priming water, that is, the alignment liquid P in the first area A1 is broken by the surface tension of the introduction liquid Q, and the second area A2. To leak. Then, the alignment liquid P flowing out from the first area A1 and the introduction liquid Q supplied from the introduction liquid supply hole 24 are mixed in the second area A2, and in the first area A1 and the second area A2. The liquid mixture M is filled.

  Thereafter, as shown in FIGS. 22 to 24, the mixed liquid M is discharged from the gap C through the drain hole 25 to the drain tank 26 by capillary action. All of the mixed liquid M is discharged to the drainage tank 26. In the present embodiment, the predetermined distance between the wafer 10 and the template 20 is 0 (zero).

  Thereafter, in a state where the mixed liquid M in the gap C is completely discharged, a predetermined process, for example, a plating process for the through holes is performed on the wafer 10. At this time, since the position adjustment of the wafer 10 and the template 20 is appropriately performed, a predetermined process can be appropriately performed.

  Also in the second embodiment described above, the same effects as in the first embodiment can be enjoyed. That is, it is possible to improve the throughput of the wafer processing while appropriately adjusting the positions of the wafer 10 and the template 20 and appropriately performing the wafer processing. In addition, when the position adjustment of the wafer 10 and the template 20 is performed for the second time, the introduction liquid Q is supplied to the second patterns 12 and 22, so that the gap is not changed before the second position adjustment is performed. The mixed liquid M of C is not discharged from the drain hole 25 and the drain tank 26. Therefore, the second position adjustment can be performed more reliably, and the position adjustment between the wafer 10 and the template 20 can be performed with higher accuracy.

<3. Third Embodiment>
Next, a third embodiment of the present invention will be described. 25 and 26 schematically show the configuration of the wafer 10 and the template 20 according to the second embodiment.

  A pattern 30 is formed on the surface 10 a of the wafer 10. The pattern 30 is formed in an annular shape, and the outer edge portion and the inner edge portion are each formed in a square shape. The pattern 30 is, for example, a partial pattern in a semiconductor chip. A plurality of patterns 30 are formed on the wafer 10 as shown in FIG.

  A pattern 40 is formed on the surface 20 a of the template 20. The pattern 40 has the same shape as the pattern 30 of the wafer 10, i.e., is formed in a ring shape, and the outer edge portion and the inner edge portion are each formed in a square shape. The pattern 40 is formed, for example, by a photolithography process and an etching process at once. A plurality of patterns 40 are formed on the template 20 as shown in FIG.

  Then, the patterns 30 and 40 face each other in a state where the wafer 10 and the template 20 are disposed to face each other. In the following description, in the gap C, a region corresponding to the patterns 30 and 40 is referred to as a first region A1, and a region formed inside the first region A1 is referred to as a second region A2.

  An alignment liquid supply hole 41 is formed in the template 20. The alignment liquid supply hole 41 is formed so as to penetrate from the pattern 40 on the front surface 20a to the back surface 20b. The alignment liquid P is supplied from the alignment liquid supply hole 41 to the first region A1.

  The template 20 has an introduction liquid supply hole 42 formed therein. The introduction liquid supply hole 42 is formed so as to penetrate from the front surface 20a to the back surface 20b in the second region A2 (near the first region A1). The introduction liquid Q is supplied from the introduction liquid supply hole 42 to the second region A2.

  Further, a drainage hole 43 is formed in the template 20. The drainage hole 43 is formed penetrating from the front surface 20a to the back surface 20b in the second region A2. The liquid mixture M in the gap C is discharged into the drainage hole 43 by capillary action. For this reason, the diameter of the drainage hole 43 is smaller than the distance of the gap C when the liquid mixture M is filled in the gap C. ing.

  A drainage tank 44 provided on the back surface 20 b is connected to the drainage hole 43. All the mixed liquid M in the gap C is discharged into the drainage tank 44 through the drainage hole 43 by capillary action. Note that the configuration of the drainage tank 44 is the same as the configuration of the drainage tank 26 of the first embodiment, and a description thereof will be omitted.

  In the template 20, the alignment liquid supply hole 41, the introduction liquid supply hole 42, the drainage hole 43, and the drainage tank 44 may be simultaneously formed by, for example, a photolithography process and an etching process.

  Next, wafer processing using the wafer 10 and the template 20 configured as described above will be described.

  First, as shown in FIG. 27, the template 20 is arranged to face the wafer 10 by a holding mechanism (not shown), and the pattern 30 of the wafer 10 and the pattern 40 of the template 20 are made to face each other.

  Thereafter, the alignment liquid P is supplied to a position corresponding to the alignment liquid supply hole 41 on the back surface 20 b of the template 20. The alignment liquid P is supplied to the first region A1 of the gap C through the alignment liquid supply hole 41 by the Laplace pressure of the alignment liquid P on the back surface 20b, for example. As shown in FIGS. 27 and 28, the alignment liquid P supplied to the first area A1 diffuses the first area A1 by capillary action, but the first area A1 is caused by the pinning effect of the patterns 30 and 40. It does not diffuse outside A1 and into the second region A2. Then, the alignment liquid P is filled in the first region A1, and the gas-liquid interface F is formed at the peripheral portion of the first region A1 (peripheral portions of the patterns 30 and 40). In addition, while forming the gas-liquid interface F in this way, the template 20 is held in a state where a predetermined height is maintained by the holding mechanism.

  When the gas-liquid interface F is formed at the peripheral edge of the first region A1, the holding of the template 20 by the holding mechanism is released. Then, the restoring force for moving the template 20 acts on the template 20 due to the surface tension of the alignment liquid P at the gas-liquid interface F, and the position adjustment of the wafer 10 and the template 20 is performed with high accuracy. Thus, the patterns 30 and 40 function as alignment patterns.

  Thereafter, as shown in FIG. 29, the introduction liquid Q is supplied to a position facing the introduction liquid supply hole 42 on the back surface 20 b of the template 20. The introduction liquid Q is supplied to the second region A2 of the gap C through the introduction liquid supply hole 42 by, for example, the Laplace pressure of the introduction liquid Q on the back surface 20b. As shown in FIGS. 29 and 30, the introduction liquid Q supplied to the second region A2 diffuses the second region A2 by capillary action. The introduction liquid Q diffused to the peripheral edge of the first area A1 functions as a so-called priming water, that is, the alignment liquid P in the first area A1 is broken by the surface tension of the introduction liquid Q, and the second area A2. To leak. The alignment liquid P flowing out from the first area A1 and the introduction liquid Q supplied from the introduction liquid supply hole 24 are mixed in the second area A2, and the mixture M diffuses in the second area A2. To do.

  And as shown in FIG.31 and FIG.32, the liquid mixture M is filled in 1st area | region A1 and 2nd area | region A2. At this time, due to the pinning effect of the patterns 30 and 40, the mixed liquid M does not diffuse outside the second region A2. Thereby, the position shift of the wafer 10 and the template 20 is suppressed, and the patterns 30 and 40 also function as a shift prevention pattern.

  Thereafter, as shown in FIGS. 31 to 33, the mixed solution M is discharged from the gap C through the drainage hole 43 to the drainage tank 44 by capillary action. All of the mixed liquid M is discharged to the drainage tank 44, and in the present embodiment, the predetermined distance between the wafer 10 and the template 20 is 0 (zero).

  Thereafter, in a state where the mixed liquid M in the gap C is completely discharged, a predetermined process, for example, a plating process for the through holes is performed on the wafer 10. At this time, since the position adjustment of the wafer 10 and the template 20 is appropriately performed, a predetermined process can be appropriately performed.

  In the third embodiment described above, the same effects as those of the first embodiment and the second embodiment can be enjoyed. That is, it is possible to improve the throughput of the wafer processing while appropriately adjusting the positions of the wafer 10 and the template 20 and appropriately performing the wafer processing.

  Next, a modification of the third embodiment will be described. In the template 20, the introduction liquid supply hole 42 may be omitted as shown in FIGS. The purpose of supplying the introduction liquid Q from the introduction liquid supply hole 42 to the second area A2 was to break down the alignment liquid P in the first area A1 and flow it out to the second area A2. In this regard, as described above, the alignment liquid P is not easily broken at the corners 30a and 40a of the outer edges of the patterns 30 and 40, but from the corners 30b and 40b of the inner edges of the patterns 30 and 40, Is easy to break. Therefore, by adjusting conditions such as the contact angle of the alignment liquid P, the alignment liquid P in the first region A1 can be naturally broken as shown in FIGS.

  In order to break the alignment liquid P in the first region A1, the break using the corners 30b and 40b and the break using the introduction liquid Q from the introduction liquid supply hole 42 may be used in combination. .

<4. Modification of Embodiment>
Next, a modification of the above embodiment will be described. In the first to third embodiments, with respect to the first pattern 21 and the pattern 40 of the template 20 corresponding to all the semiconductor chips (the first pattern 11 and the pattern 30) of the wafer 10, Although the introduction liquid supply holes 24 and 42 are formed, the introduction liquid supply holes 24 and 42 may be formed only for the central semiconductor chip.

  In the following description, a modification of the first embodiment will be described. As shown in FIG. 36, in the template 20, the introduction liquid supply hole 24 is formed only between the central patterns 21 and 22, and the introduction liquid supply hole 24 is not formed between the other surrounding patterns 21 and 22. . In the following description, the central patterns 21 and 22 in which the introduction liquid supply holes 24 are formed are referred to as a central pattern, and the peripheral patterns 21 and 22 in which the introduction liquid supply holes 24 are not formed are referred to as a peripheral pattern.

  In such a case, in all of the central pattern and the surrounding pattern, after supplying the alignment liquid P to the first region A1 and adjusting the position of the wafer 10 and the template 20, first, in the central pattern, from the introduction liquid supply hole 24 The introduction liquid Q is supplied to the second area A2, and the alignment liquid P in the first area A1 is broken down to flow out into the second area A2. If it does so, the distance of the clearance gap C between the wafer 10 and the template 20 will become small by the part which alignment liquid P flowed out, and a pressure will be applied in the direction which makes the said clearance gap C small. This pressure also acts on the surrounding pattern, and the alignment liquid P in the first region A1 of the surrounding pattern is broken. As described above, in all the patterns of the template 20 (in all the semiconductor chips of the wafer 10), the alignment liquid P in the first area A1 can flow out to the second area A2. The subsequent operation is the same as in the first embodiment.

  According to the present embodiment, the supply amount of the introduction liquid Q can be reduced, and wafer processing can be performed by a simpler method. In addition, in other 2nd Embodiment and 3rd Embodiment, the same effect can be enjoyed.

  Further, the method of breaking the alignment liquid P in the first region A1 is not limited to the first to third embodiments. For example, the alignment liquid P in the first region A1 can be broken by controlling the ambient temperature and pressure.

  In the first to third embodiments, when the mixed liquid M in the gap C is discharged, all the mixed liquid M is discharged from the drain holes 25 and 43 and the drain tanks 26 and 44. However, depending on the predetermined process, the mixed liquid M may be discharged until the gap C reaches a predetermined distance. In this case, depending on the predetermined distance, the drain holes 25 and 43 and the drain tanks 26 and 44 may be omitted.

  In the following description, a modification of the first embodiment will be described. After supplying the alignment liquid P to the first area A1 and adjusting the position of the wafer 10 and the template 20, the introduction liquid Q is supplied from the introduction liquid supply hole 24 to the second area A2, and the first area A1. The alignment liquid P is broken and discharged to the second region A2. Then, when the mixed solution M is filled in the first region A1 and the second region A2, the distance of the gap C is reduced by the amount that the alignment liquid P flows out into the second region A2. Thus, by controlling the supply amounts of the alignment liquid P and the introduction liquid Q, the gap C can be set to a predetermined distance.

  According to the present embodiment, the drainage holes 25 and the drainage tank 26 can be omitted, and wafer processing can be performed by a simpler method. In addition, in other 2nd Embodiment and 3rd Embodiment, the same effect can be enjoyed.

  In the first to third embodiments, the pinning effect caused by the pattern protruding from the wafer 10 and the template 20 is described as means for defining the first region A1 and the second region A2. However, other means can be used. For example, at the boundary between the first region A1 and the second region A2, a region where the contact angle of the alignment liquid changes can be provided, such as forming a groove in the groove or forming a low hydrophilic region in a band shape. For example, it can function as a pattern. Alternatively, even if the first region A1 and the second region A2 have different hydrophilic properties, the respective regions themselves can function as a pattern.

  Moreover, although the said 1st Embodiment-3rd Embodiment demonstrated the metal-plating process which forms a penetration electrode in a through-hole as a predetermined process, this invention is applicable also to another process. For example, the present invention can be applied to other electric field processes such as an etching process using an etching liquid, and the present invention can also be applied to a liquid process other than an electrolytic process such as a cleaning process using a cleaning liquid. The present invention can also be applied to inspection of semiconductor devices. For example, contact liquid can be contacted at once with a plurality of fine through electrodes, and the through electrodes can be inspected in wafer units.

  In the first to third embodiments, the case where the substrate to be processed is the wafer 10 and the liquid supply substrate is the template 20 has been described. However, the substrate to be processed and the liquid supply substrate are the same. It is not limited.

  For example, the substrate to be processed may be a semiconductor wafer, and the liquid supply substrate may be a support substrate on which a semiconductor chip is mounted. In such a case, the predetermined process is, for example, a bonding process using an adhesive, and the present invention can be applied. At this time, pure water may be used for the alignment liquid P and the introduction liquid Q, or an adhesive may be used.

  Further, for example, both the substrate to be processed and the liquid supply substrate may be semiconductor wafers. In such a case, for example, in a semiconductor wafer, a semiconductor chip (first pattern) is formed on the inner periphery, and a second pattern is formed on the outer periphery. The predetermined process at this time may also be a bonding process using an adhesive, for example.

  In the above embodiment, pure water is used as the alignment liquid P and the introduction liquid Q, but other liquids such as a plating liquid and an etching liquid may be used.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.

DESCRIPTION OF SYMBOLS 10 Wafer 11 1st pattern 12 2nd pattern 20 Template 21 1st pattern 22 2nd pattern 23 Alignment liquid supply hole 24 Introduction liquid supply hole 25 Drain hole 26 Drain tank 30 Pattern 40 Pattern 41 Alignment liquid supply Hole 42 Introduction liquid supply hole 43 Drainage hole 44 Drainage tank A1 First area A2 Second area C Gap F, F1, F2 Gas-liquid interface M Mixed liquid P Alignment liquid Q Introducing liquid

Claims (23)

A substrate processing method for performing predetermined processing on a surface of a substrate to be processed,
A first step of supplying an alignment liquid to a first region between the substrate to be processed and the liquid supply substrate from a liquid supply substrate disposed opposite to the substrate to be processed;
The position of the liquid supply substrate with respect to the substrate to be processed is filled with the alignment liquid in the first region and the surface tension of the alignment liquid generated at the gas-liquid interface formed at the peripheral portion of the first region. A second step of making adjustments;
A third step of causing the alignment liquid in the first region to flow into a second region outside or inside the first region between the substrate to be processed and the liquid supply substrate;
A fourth step of filling the first region and the second region with the alignment liquid;
And a fifth step of performing a predetermined process on the surface of the substrate to be processed in a state where a predetermined distance is provided between the substrate to be processed and the liquid supply substrate. . The second region is outside the first region;
A first pattern is formed at a position corresponding to the first region on the surface of the substrate to be processed and the surface of the liquid supply substrate,
A second pattern is formed at a position corresponding to the second region on the surface of the substrate to be processed and the surface of the liquid supply substrate,
In the second step, the gas-liquid interface at the peripheral edge of the first region is formed at the peripheral edge of the first pattern,
In the fourth step, the position adjustment of the liquid supply substrate with respect to the substrate to be processed is performed again by the surface tension of the alignment liquid generated at the gas-liquid interface formed at the peripheral edge of the second pattern. The substrate processing method according to claim 1, wherein the substrate processing method is characterized. An alignment liquid supply hole for supplying the alignment liquid is formed in the first pattern of the liquid supply substrate,
An introduction liquid supply hole for supplying an introduction liquid is formed between the first pattern and the second pattern in the liquid supply substrate,
The alignment liquid in the first area flows out into the second area by the introduction liquid supplied from the introduction liquid supply hole in the third step. Substrate processing method. An alignment liquid supply hole for supplying the alignment liquid is formed in the first pattern of the liquid supply substrate,
An introduction liquid supply hole for supplying an introduction liquid is formed in the second pattern of the liquid supply substrate,
The alignment liquid in the first area flows out into the second area by the introduction liquid supplied from the introduction liquid supply hole in the third step. Substrate processing method. A plurality of pairs of the first pattern and the second pattern are formed on the surface of the liquid supply substrate,
The introduction liquid supply hole is formed only in the first pattern and the second pattern in the center among the plurality of pairs of the first pattern and the second pattern,
In the third step,
In the first pattern and the second pattern in the center, the alignment liquid in the first area flows out into the second area by the introduction liquid supplied from the introduction liquid supply hole, and the processing target Pressure acts in a direction to reduce the space between the substrate and the liquid supply substrate,
5. The alignment liquid according to claim 3, wherein the alignment liquid in the first region flows out into the second region by the pressure in the surrounding first pattern and the second pattern. 6. Substrate processing method. The second region is inside the first region;
Patterns are formed at positions corresponding to the first regions on the surface of the substrate to be processed and the surface of the liquid supply substrate,
2. The substrate processing method according to claim 1, wherein in the second step, a gas-liquid interface at a peripheral portion of the first region is formed at a peripheral portion of the pattern. An alignment liquid supply hole for supplying the alignment liquid is formed in the pattern of the liquid supply substrate,
An introduction liquid supply hole for supplying an introduction liquid is formed at a position corresponding to the second region in the liquid supply substrate,
The alignment liquid in the first area flows out into the second area by the introduction liquid supplied from the introduction liquid supply hole in the third step. Substrate processing method. A plurality of the patterns are formed on the surface of the liquid supply substrate,
The introduction liquid supply hole is formed only in the central pattern among the plurality of patterns,
In the third step,
In the central pattern, the alignment liquid in the first area flows out into the second area by the introduction liquid supplied from the introduction liquid supply hole, and between the substrate to be processed and the liquid supply substrate. Pressure acts in the direction of decreasing,
The substrate processing method according to claim 7, wherein in the surrounding pattern, the alignment liquid in the first region flows out to the second region due to the pressure. The pattern of the substrate to be processed and the pattern of the liquid supply substrate each have an annular shape and have corners,
9. The substrate processing according to claim 6, wherein, in the third step, the alignment liquid in the first region flows out from the corner portion to the second region. Method. A drainage hole for discharging the liquid between the substrate to be processed and the liquid supply substrate is formed at a position corresponding to the second region in the liquid supply substrate,
The liquid between the substrate to be processed and the liquid supply substrate is discharged from the drain hole by capillary force after the fourth step and before the fifth step. The substrate processing method as described in any one of 1-9. A drainage tank for storing the liquid discharged from the drainage hole is connected to the drainage hole,
After the fourth step and before the fifth step, the liquid between the substrate to be processed and the liquid supply substrate is discharged to the drainage tank through the drainage hole by capillary force. The substrate processing method according to claim 10. A liquid supply substrate that is disposed opposite to the substrate to be processed and is used when performing a predetermined process on the surface of the substrate to be processed,
A first pattern formed on the surface;
An annular second pattern formed on the surface and provided outside the first pattern;
A liquid supply substrate formed in the first pattern and having an alignment liquid supply hole for supplying an alignment liquid between the substrate to be processed and the liquid supply substrate. 13. The liquid supply device according to claim 12, further comprising an introduction liquid supply hole that is formed between the first pattern and the second pattern and supplies an introduction liquid between the substrate to be processed and the liquid supply substrate. The liquid supply substrate according to 1. The liquid supply substrate according to claim 12, further comprising an introduction liquid supply hole that is formed in the second pattern and supplies an introduction liquid between the substrate to be processed and the liquid supply substrate. A plurality of pairs of the first pattern and the second pattern;
The introduction liquid supply hole is formed only in the first pattern and the second pattern in the center among the plurality of pairs of the first pattern and the second pattern. Item 15. A liquid supply substrate according to Item 13 or 14. The drainage hole which is formed between the first pattern and the second pattern and discharges the liquid between the substrate to be processed and the liquid supply substrate is further provided. The liquid supply substrate according to any one of the above. The liquid supply substrate according to claim 16, further comprising a drain tank connected to the drain hole and storing the liquid discharged from the drain hole. A liquid supply substrate that is disposed opposite to the substrate to be processed and is used when performing a predetermined process on the surface of the substrate to be processed,
An annular pattern formed on the surface;
A liquid supply substrate having an alignment liquid supply hole formed in the pattern and configured to supply an alignment liquid between the substrate to be processed and the liquid supply substrate. The liquid supply substrate according to claim 18, further comprising an introduction liquid supply hole that is formed inside the pattern and supplies an introduction liquid between the substrate to be processed and the liquid supply substrate. A plurality of the patterns;
The liquid supply substrate according to claim 19, wherein the introduction liquid supply hole is formed only in the central pattern among the plurality of patterns. The liquid supply substrate according to claim 18, wherein the pattern has a corner portion. The liquid according to any one of claims 18 to 21, further comprising a drain hole formed inside the pattern and configured to discharge a liquid between the substrate to be processed and the liquid supply substrate. Supply board. The liquid supply substrate according to claim 22, further comprising a drainage tank connected to the drainage hole and storing the liquid discharged from the drainage hole.

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