JP2015149339A - Method of manufacturing semiconductor device, and apparatus of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and an apparatus of manufacturing a semiconductor device, capable of improving a yield of a semiconductor device manufactured by bonding a pair of substrates.SOLUTION: In a method of manufacturing a semiconductor device according to an embodiment, hydrophilic treatment is performed to each surface of bonding surfaces of a pair of substrates to be bonded with each other. In a time period before the respective surfaces to which the hydrophilic treatment is performed are bonded with each other, a temperature of at least one substrate of the pair of substrates is controlled to a predetermined temperature. The pair of substrates at least one of which is controlled to the predetermined temperature are bonded with each other.

Description

  Embodiments described herein relate generally to a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus.

  Conventionally, there is a semiconductor device manufactured by bonding a pair of substrates. For example, the back-illuminated image sensor includes a first substrate on which a surface of a first substrate on which a semiconductor element such as a photodiode is formed is bonded to a surface of a second substrate serving as a support substrate. The light receiving surface of the photodiode is formed by polishing the back side of the substrate.

  The pair of substrates to be bonded to each other is activated by hydrophilizing the surfaces to be bonded surfaces, and then bonded after being washed and dried, so that it is directly used without using an adhesive or the like. Be joined.

  However, in a process in which a pair of substrates to be bonded is cleaned and dried, the temperature is lowered, the temperature distribution on the bonding surface becomes non-uniform, and the bonding surface may be distorted. Such distortion of the bonding surface is one of the causes of reducing the yield of a semiconductor device manufactured by bonding a pair of substrates.

JP 2013-8921 A

  An object of one embodiment of the present invention is to provide a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus capable of improving the yield of a semiconductor device manufactured by bonding a pair of substrates.

  According to one embodiment of the present invention, a method for manufacturing a semiconductor device is provided. In the method for manufacturing a semiconductor device according to the embodiment, a hydrophilic treatment is performed on each surface to be a bonding surface of a pair of substrates to be bonded. In a period until the surfaces subjected to the hydrophilic treatment are bonded to each other, at least one of the pair of substrates is temperature-controlled to a predetermined temperature. Then, at least one of the substrates is bonded to the pair of substrates whose temperature is adjusted to the predetermined temperature.

The schematic diagram by planar view which shows the structure of the manufacturing apparatus which concerns on embodiment. Explanatory drawing which shows an example of a structure and operation | movement of a hydrophilization processing part which concerns on embodiment. Explanatory drawing which shows an example of a structure and operation | movement of the temperature control washing drying part which concerns on embodiment. Explanatory drawing which shows an example of a structure and operation | movement of the temperature control alignment part which concerns on embodiment. Explanatory drawing which shows an example of a structure of the junction part which concerns on embodiment. Explanatory drawing which shows an example of operation | movement of the junction part which concerns on embodiment. Explanatory drawing which shows the mechanism of joining of the 1st board | substrate and 2nd board | substrate which concerns on embodiment. The flowchart which shows the process which the control part of the manufacturing apparatus which concerns on embodiment performs.

  Exemplary embodiments of a semiconductor device manufacturing apparatus (hereinafter, simply referred to as “manufacturing apparatus”) and a semiconductor device manufacturing method will be explained below in detail with reference to the accompanying drawings. In addition, this invention is not limited by this embodiment. In the following description, “temperature control” means temperature adjustment.

  Drawing 1 is a mimetic diagram by plane view showing the composition of manufacturing device 1 concerning an embodiment. The manufacturing apparatus 1 is an apparatus that manufactures a semiconductor device by bonding a first substrate and a second substrate, and is used, for example, for manufacturing a back-illuminated image sensor. Note that the semiconductor device manufactured by the manufacturing apparatus 1 is not limited to the back-illuminated image sensor.

  As shown in FIG. 1, the manufacturing apparatus 1 includes a transfer chamber 2, a first mounting table 3, a second mounting table 4, a third mounting table 5, and a hydrophilic surface. The heat treatment processing unit 6, the temperature control washing and drying unit 7, the temperature control positioning unit 8, and the control unit 10 provided outside the transfer chamber 2 are provided.

  On the first mounting table 3, a loading FOUP (Front Opening Unified Pod) 11 on which a plurality of first substrates W1 before bonding are stored is mounted. On the second mounting table 4, a loading FOUP 12 in which a plurality of second substrates W2 before bonding are stored is mounted.

  Here, the first substrate W1 is, for example, an SOI (Silicon On Insulator) substrate in which semiconductor elements such as a multilayer wiring layer and a plurality of photodiodes are sequentially stacked on the surface side. Note that the first substrate W1 is not limited to the SOI substrate, and may be any semiconductor substrate such as a silicon substrate. Further, the second substrate W2 is, for example, a silicon substrate. Hereinafter, when the first substrate W1 and the second substrate W2 are not distinguished, they are simply referred to as the substrate W.

  The transfer chamber 2 is a clean room in which contamination control is performed so as to ensure a certain degree of air cleanliness. A robot 14 is provided in the transfer chamber 2. The robot 14 includes a base 15, a first arm 16, a second arm 17, a third arm 18, and an end effector 19.

  The first arm 16 is connected at its base end portion to the base portion 15 so as to be movable up and down and rotatable. The second arm 17 has a base end portion rotatably connected to a tip end portion of the first arm 16. The base end of the third arm 18 is rotatably connected to the tip of the second arm 17. The first arm 16, the second arm 17, and the third arm 18 rotate in a plane parallel to the installation surface of the robot 14, respectively.

  The end effector 19 is a robot hand that holds the substrate W, and a base end portion is rotatably connected to a tip end portion of the third arm 18. The end effector 19 rotates with a virtual line extending in the extending direction of the third arm 18 as a rotation axis. Thereby, the end effector 19 can reverse the front and back of the grasped substrate W.

  The robot 14 transfers the substrate W inside the transfer chamber 2. Specifically, the robot 14 transports the substrate W from the loading FOUPs 11 and 12 to the hydrophilization processing unit 6, and transports the substrate W from the hydrophilization processing unit 6 to the temperature adjustment cleaning / drying unit 7.

  Further, the robot 14 conveys the substrate W from the temperature adjustment cleaning / drying unit 7 to the temperature adjustment position adjustment unit 8, conveys the substrate W from the temperature adjustment position adjustment unit 8 to the bonding unit 9, and the unloading FOUP 13 from the bonding unit 9. The substrate W is transferred to the substrate.

  The hydrophilization processing unit 6 is a processing unit that is activated by performing a hydrophilization process on the surface to be a bonding surface of the substrate W to be loaded. An example of the configuration of the hydrophilic treatment unit 6 will be described later with reference to FIG.

  The temperature control cleaning / drying unit 7 is a processing unit that performs cleaning and drying of the substrate W that has been subjected to the hydrophilic treatment. After performing the cleaning process of the substrate W, the temperature control cleaning / drying unit 7 controls the temperature of the substrate W to a predetermined temperature during the drying process of the substrate W. At this time, the temperature adjustment cleaning / drying unit 7 adjusts the temperature of the substrate W so that the temperature distribution on the surface of the substrate W becomes a predetermined temperature uniformly.

  As a result, even if the temperature of the substrate W is lowered by the cleaning process, for example, the temperature-controlled cleaning / drying unit 7 can uniformly increase the temperature of the entire surface of the substrate W to a predetermined temperature during the drying process of the substrate W. it can. Therefore, according to the manufacturing apparatus 1, it is possible to suppress the occurrence of distortion in the substrate W due to the temperature decrease due to the cleaning process.

  The predetermined temperature is, for example, applied to at least one of the first substrate W1 and the second substrate W2 after the first substrate W1 and the second substrate W2 are bonded by the manufacturing apparatus 1. On the other hand, the temperature is substantially the same as the temperature in the processing chamber where the photolithography process is performed. More specifically, the predetermined temperature is, for example, 23 ° C to 27 ° C, and preferably 25 ° C. Note that an example of the configuration of the temperature-controlled washing and drying unit 7 will be described later with reference to FIG.

  The temperature adjustment position adjusting unit 8 is a processing unit that rotates the substrate W dried by the temperature adjustment cleaning / drying unit 7 and adjusts the position of the notch provided in advance on the outer periphery of the substrate W with respect to the robot 14 to a predetermined position. The temperature adjustment position adjustment unit 8 adjusts the temperature of the substrate W to a predetermined temperature during the process of adjusting the position of the notch.

  At this time, the temperature adjustment positioning unit 8 adjusts the temperature of the substrate W so that the temperature distribution on the surface of the substrate W becomes a predetermined temperature uniformly. In addition, the predetermined temperature here is 23 degreeC-27 degreeC similarly to the predetermined temperature mentioned above, Preferably, it is 25 degreeC.

  As a result, the temperature adjustment position adjustment unit 8 is configured such that when the temperature of the substrate W decreases below a predetermined temperature during the period until the substrate W is transported from the temperature adjustment cleaning / drying unit 7 to the temperature adjustment position adjustment unit 8. The temperature of the entire surface of W can be uniformly raised to a predetermined temperature. This also can prevent the substrate W from being distorted due to the temperature drop.

  Note that the substrate W whose temperature has been adjusted by the temperature adjustment position adjustment unit 8 is then transferred to the bonding unit 9 by the robot 14, but the temperature drop during transfer is negligible. Specifically, the temperature control cleaning / drying unit 7 and the temperature control positioning unit 8 are provided at positions facing each other with the transfer chamber 2 interposed therebetween. On the other hand, the temperature control alignment part 8 and the junction part 9 are adjacently provided.

  That is, the transport distance of the substrate W from the temperature adjustment position alignment unit 8 to the bonding portion 9 is shorter than the transport distance of the substrate W from the temperature control cleaning / drying unit 7 to the temperature control position alignment unit 8. For this reason, the temperature drop of the substrate W during the transfer from the temperature adjustment alignment unit 8 to the bonding unit 9 is negligible.

  Therefore, according to the manufacturing apparatus 1, the substrate W in which the distortion caused by the temperature decrease is suppressed can be carried into the bonding portion 9. The temperature adjustment position adjustment unit 8 does not adjust the temperature of the substrate W when the temperature of the substrate W carried in from the temperature adjustment cleaning / drying unit 7 is a predetermined temperature. An example of the configuration of the temperature adjustment positioning unit 8 will be described later with reference to FIG.

  The bonding unit 9 is a processing unit that bonds the first substrate W <b> 1 and the second substrate W <b> 2 carried in by the robot 14. As described above, the substrate 9 in which the temperature distribution is uniformly adjusted to a predetermined temperature and the distortion is suppressed is carried into the bonding portion 9. Therefore, the bonding portion 9 can improve the yield by bonding the first substrate W1 and the second substrate W2 without causing bonding failure due to distortion of the substrate W.

  In addition, the temperature of the substrate W carried into the bonding portion 9 is adjusted to substantially the same temperature as the temperature in the processing chamber in which lithography processing is performed later. For this reason, even if various processes are performed after bonding and the substrate W is thermally expanded or contracted, the substrate W has a shape at the time of bonding in the process of performing the lithography process. That is, the substrate W after bonding returns to a shape without distortion during bonding when a lithography process is performed.

  Therefore, according to the manufacturing apparatus 1, for example, when various patterns are formed in the semiconductor device by subsequent lithography processing, the yield of the semiconductor device is improved by suppressing the occurrence of pattern misalignment. be able to. An example of the configuration of the joint portion 9 will be described later with reference to FIG.

  The control unit 10 is a processing unit that controls the operation of the entire manufacturing apparatus 1 by executing a program stored in advance, and is, for example, a CPU (Central Processing Unit). The control unit 10 is connected to the robot 14, the hydrophilization processing unit 6, the temperature control washing / drying unit 7, the temperature control alignment unit 8, and the bonding unit 9 through a communication bus 10 a.

  And the control part 10 outputs a control signal to each of the robot 14, the hydrophilization process part 6, the temperature control washing | cleaning drying part 7, the temperature control position alignment part 8, and the junction part 9 via the bus | bath 10a. The operation of the entire manufacturing apparatus 1 is controlled. An example of processing executed by the control unit 10 will be described later with reference to FIG.

  Next, an example of the configuration and operation of the hydrophilic treatment unit 6 will be described with reference to FIG. FIG. 2 is an explanatory diagram illustrating an example of the configuration and operation of the hydrophilic treatment unit 6 according to the embodiment. As shown in FIG. 2, the hydrophilization processing unit 6 includes a chamber 61 and a high frequency power source 64. FIG. 2 schematically shows a side surface of the hydrophilization treatment section 6 obtained by cutting the chamber 61 in the vertical direction in order to explain the internal configuration of the chamber 61.

  The chamber 61 includes an intake hole 61a for introducing the reactive gas G1 into the chamber 61, and an exhaust hole 61b for exhausting the reactive gas G1 to the outside of the chamber 61. Further, inside the chamber 61, a lower electrode 62 on which the substrate W is loaded and placed, and an upper electrode 63 arranged to face the lower electrode 62 are provided. The lower electrode 62 and the upper electrode 63 are connected to each other outside the chamber 61 via a high frequency power source 64. The upper electrode 63 is connected to the ground 65.

  In the hydrophilization processing unit 6, the unbonded substrate W taken out from the loading FOUPs 11 and 12 is loaded into the chamber 61 by the robot 14 and placed on the lower electrode 62. At this time, the robot 14 places the substrate W on the lower electrode 62 so that the surface to be the bonding surface later becomes the upper side.

  Thereafter, the hydrophilization processing unit 6 performs high-frequency operation while performing the introduction of the reactive gas G1 from the intake hole 61a into the chamber 61 and the exhaustion of the reactive gas G1 from the exhaust hole 61 to the outside of the chamber 61 in parallel. A high frequency voltage is applied to the lower electrode 62 and the upper electrode 63 by the power source 64. Here, the reactive gas G1 is, for example, an oxygen gas, a nitrogen gas, or a mixed gas containing these gases as a main component.

  The reactive gas G1 is turned into plasma in the chamber 61 when a high frequency voltage is applied to the lower electrode 62 and the upper electrode 63 by the high frequency power source 64. The positive ions 60 in the plasma are attracted toward the lower electrode 62 and collide with the surface of the substrate W.

  Thereby, the substrate W is in a state where the surface is activated by the hydroxyl group (OH group) adhering to the surface and being hydrophilized. The substrate W that has been subjected to the hydrophilic treatment is transported to the temperature-controlled washing and drying unit 7 by the robot 14. Here, the case where the hydrophilic treatment is performed by causing plasma to collide with the surface of the substrate W has been described. However, the hydrophilic treatment section 6 is configured to perform the hydrophilic treatment by wet etching the surface of the substrate W. There may be.

  Next, with reference to FIG. 3, an example of a structure and operation | movement of the temperature control washing | cleaning drying part 7 is demonstrated. Drawing 3 is an explanatory view showing an example of composition and operation of temperature control washing drying part 7 concerning an embodiment.

  As shown in FIG. 3A, the temperature control cleaning / drying unit 7 includes a wafer stage 71, a drive unit 72, a cleaning liquid supply unit 73, a gas supply unit 74, a temperature control unit 75, and a discharge unit 76. And a pipe 77 and a temperature sensor 78. A pipe 77 connects the cleaning liquid supply unit 73 and the discharge unit 76, the gas supply unit 74 and the temperature control unit 75, and the temperature control unit 75 and the discharge unit 76.

  A valve B1 that opens and closes the pipe 77 is provided in the middle of the pipe 77 that connects the cleaning liquid supply unit 73 and the discharge unit 76. In addition, a valve B <b> 2 that opens and closes the pipe 77 is provided in the middle of the pipe 77 that connects the temperature control unit 75 and the discharge unit 76. The valves B1 and B2 are closed during a period when the substrate W is not cleaned and dried.

  The temperature-controlled cleaning / drying unit 7 is loaded with the hydrophilically processed substrate W by the robot 14 and placed on the wafer stage 71. At this time, the robot 14 places the substrate W on the wafer stage 71 with the surface of the substrate W to be a bonding surface later facing up.

  When cleaning / drying the substrate W, the temperature control cleaning / drying unit 7 first holds the substrate W by suction with the wafer stage 71 as shown in FIG. Thereafter, the temperature cleaning and drying unit 7 rotates the shaft connected to the wafer stage 71 by the driving unit 72 to rotate the substrate W together with the wafer stage 71.

  Subsequently, as shown in FIG. 3B, the temperature controlled cleaning / drying unit 7 opens the valve B1, and supplies the cleaning liquid C for cleaning the substrate W from the cleaning liquid supply unit 73 to the discharge unit 76 via the pipe 77. Supply. The cleaning liquid C here is a chemical liquid containing at least one of acid, base, and pure water, for example. Accordingly, the cleaning liquid C is sprayed from the discharge unit 76 to the surface of the substrate W, and the substrate W is cleaned.

  When the cleaning of the substrate W is completed, the temperature adjustment cleaning / drying unit 7 closes the valve B1 and opens the valve B2, as shown in FIG. 3C. Then, the temperature control cleaning / drying unit 7 supplies the substrate drying gas G <b> 2 from the gas supply unit 74 to the temperature control unit 75 via the pipe 77. The substrate drying gas G2 is, for example, nitrogen gas. The substrate drying gas G2 may be any other gas such as oxygen gas or clean air.

  Subsequently, the temperature control cleaning / drying unit 7 controls the temperature of the gas G <b> 2 supplied from the gas supply unit 74 by the temperature control unit 75 and supplies the gas G <b> 2 to the discharge unit 76 via the pipe 77. As a result, the gas G2 is sprayed uniformly from the discharge unit 76 to the entire surface of the substrate W, and the substrate W is dried.

  At this time, the temperature adjustment unit 75 adjusts the temperature of the gas G2 according to the temperature of the surface of the substrate W. Specifically, in the temperature-controlled cleaning / drying unit 7, the temperature of the substrate W is detected by the temperature sensor 78 before and during the cleaning of the substrate W.

  The temperature sensor 78 is, for example, a thermography device that detects the temperature of the surface of the substrate W by analyzing infrared rays emitted from the substrate W, and outputs information about the detected temperature of the surface of the substrate W to the temperature adjustment unit 75. To do.

  The temperature adjustment unit 75 adjusts the temperature of the gas G <b> 2 in accordance with information related to the temperature of the substrate W surface input from the temperature sensor 78. For example, when the temperature of the surface of the substrate W is less than 25 ° C., which is an example of a predetermined temperature, the temperature adjustment unit 75 adjusts the temperature of the gas G2 to 30 ° C. to 40 ° C. and supplies the gas G2 to the discharge unit 76. As described above, the temperature control cleaning and drying unit 7 controls the temperature and drying of the substrate W by bringing the temperature-controlled gas (here, the gas G2) into contact with the substrate W. The substrate W that has been dried and temperature-controlled is transferred by the robot 14 to the temperature adjustment position adjustment unit 8.

  Here, the case where the discharge unit 76 is also used for discharging the cleaning liquid C and the gas G2 has been described, but the discharge unit 76 may be provided for discharging the cleaning liquid C and for discharging the gas G2, respectively. .

  In such a case, the discharge unit 76 dedicated for discharging the gas G2 is configured such that the amount of the gas G2 discharged to the outer peripheral portion of the substrate W is larger than the amount of the gas G2 discharged to the central portion of the substrate W. As a result, the temperature of the entire substrate W can be adjusted so as to reach a predetermined temperature more uniformly.

  Specifically, the substrate W that is placed on the wafer stage 71 and rotates may have a temperature at the center higher than that at the outer periphery due to heat generated by the drive unit 72. In such a case, the temperature of the entire substrate W can be adjusted to a predetermined temperature more uniformly by providing the discharge unit 76 dedicated to discharging the gas G2 in which the amount of G2 discharged to the outer peripheral portion is larger than the central portion of the substrate W. Can do.

  Next, an example of the configuration and operation of the temperature adjustment position adjustment unit 8 will be described with reference to FIG. FIG. 4 is an explanatory diagram illustrating an example of the configuration and operation of the temperature adjustment positioning unit 8 according to the embodiment. As shown in FIG. 4, the temperature adjustment alignment unit 8 is disposed to face the wafer stage 81 that holds the substrate W by suction, the drive unit 82 that rotates the wafer stage 81, and the upper surface of the outer periphery of the wafer stage 81. And a notch detector 83.

  The wafer stage 81 is formed of, for example, a material whose light reflectance on the upper surface on which the substrate W is placed is lower than the light reflectance on the surface of the substrate W. The notch detection unit 83 is an optical sensor that projects the laser beam L and detects the notch Wn according to the received light intensity of the reflected laser beam L.

  Further, the temperature adjustment position adjustment unit 8 includes a temperature adjustment unit 84 that adjusts the temperature of the wafer stage 81 and a temperature sensor 85 that is disposed to face the upper surface of the wafer stage 81. The temperature sensor 85 is, for example, a thermographic device similar to the temperature sensor 78 shown in FIG.

  A substrate W that has been dried and temperature-controlled by the temperature-control washing / drying unit 7 is carried into the temperature-control-positioning unit 8 by the robot 14 and placed on the wafer stage 81. Then, when the substrate W is placed on the wafer stage 81, the temperature adjustment alignment unit 8 first holds the substrate W by suction with the wafer stage 81.

  Thereafter, the temperature adjustment positioning unit 8 starts projecting and receiving the laser beam L by the notch detection unit 83. The temperature adjustment alignment unit 8 rotates the shaft connected to the wafer stage 81 by the driving unit 82 to rotate the substrate W together with the wafer stage 81.

  Here, as shown in FIG. 4, the notch Wn is a notch provided in advance at one place on the outer peripheral portion of the substrate W. Such a notch is provided at a position based on the crystal orientation of the substrate W. As described above, the wafer stage 81 is formed of a material whose light reflectance on the upper surface on which the substrate W is placed is lower than the light reflectance on the surface of the substrate W.

  Therefore, the notch detection unit 83 detects the notch Wn when the received light intensity of the laser light L received during the rotation of the substrate W is reduced, and outputs a signal indicating that to the drive unit 82. When the signal indicating that the notch Wn is detected is input from the notch detection unit 83, the drive unit 82 stops the rotation of the wafer stage 81. Thereby, the temperature control position alignment part 8 can adjust the position of the notch Wn with respect to the robot 14 to a predetermined position.

  Further, the temperature adjustment position adjustment unit 8 sets the temperature of the substrate W to a predetermined value by the temperature adjustment unit 84 during the period from the time when the substrate W is loaded until the position of the notch Wn is aligned and then the time when the substrate W is unloaded. Adjust temperature to temperature. Specifically, the temperature adjustment unit 84 controls the temperature of the wafer stage 81 in accordance with the information related to the temperature of the substrate W input from the temperature sensor 85, so that the substrate W placed on the wafer stage 81 is predetermined. Adjust temperature to temperature.

  It should be noted that any configuration can be used as a configuration in which the temperature adjustment unit 84 adjusts the temperature of the wafer stage 81. For example, a configuration may be used in which the heating stage is embedded in the entire interior of the wafer stage 81 and the temperature of the wafer stage 81 is controlled by supplying a current from the temperature control unit 84 to the heating line.

  In addition, for example, a tube is embedded inside the wafer stage 81, and the temperature-adjusted fluid is supplied from the temperature adjustment unit 84 to the tube inside the wafer stage 81 and circulated, whereby the wafer stage 81 is heated. The structure which adjusts may be sufficient.

  The substrate W on which the alignment and temperature adjustment of the notch Wn has been completed is transferred to the joint 9 by the robot 14. In this way, the temperature adjustment alignment unit 8 makes the substrate W contact with the substrate W (here, the wafer stage 81) until the substrate W is unloaded toward the bonding unit 9 until the substrate W is unloaded. W can be maintained at a predetermined temperature.

  Next, with reference to FIG. 5 and FIG. 6, an example of a structure and operation | movement of the junction part 9 is demonstrated. FIG. 5 is an explanatory diagram illustrating an example of the configuration of the joint 9 according to the embodiment, and FIG. 6 is an explanatory diagram illustrating an example of the operation of the joint 9 according to the embodiment.

  As shown in FIG. 5, the bonding portion 9 includes a wafer stage 91 on which the first substrate W <b> 1 is placed, a plurality of support portions 92 that support the lower surface of the outer peripheral portion of the second substrate W <b> 2, and the wafer stage 91. And a pressurizer 93 disposed to face the center of the upper surface. 5 shows two support portions 92, but at least three support portions 92 are provided.

  The support portion 92 is provided at the tip of a sliding body 95 that slides up and down and back and forth with respect to a plurality of guides 94 standing around the wafer stage 91. That is, the support part 92 can be moved up and down in a direction parallel to the normal line of the installation surface on which the wafer stage 91 is installed, and can advance and retreat in the radial direction of the second substrate W2 to be supported. The pressurizer 93 can be moved up and down in a direction parallel to the normal line of the installation surface on which the wafer stage 91 is installed.

  The first substrate W <b> 1 and the second substrate W <b> 2 are carried into the bonding portion 9 from the temperature adjustment alignment portion 8 by the robot 14. The robot 14 places the first substrate W1 on the wafer stage 91 as shown in FIG. At this time, the robot 14 places the first substrate W <b> 1 on the wafer stage 91 with the surface that will be the bonding surface later, that is, the surface that has been subjected to the hydrophilic treatment, facing up.

  Further, the robot 14 supports the second substrate W2 by the support unit 92. At this time, the robot 14 holds the second substrate W <b> 2 by the support unit 92 with the surface on the side to be the bonding surface later, that is, the surface to which the hydrophilic treatment has been performed facing down. As a result, the first substrate W1 and the second substrate W2 are in a state of facing each other with a slight gap therebetween.

  Thereafter, in the state where the second substrate W2 is supported by the support portion 92, the bonding portion 9 lowers the pressurizer 93 and presses the center of the second substrate W2 by the pressurizer 93. Thereby, as shown in FIG. 6B, the lower surface center portion of the second substrate W2 is bonded to the upper surface center portion of the first substrate W1.

  Thereafter, as shown in FIG. 6C, the bonding portion 9 causes the support portion 92 to move backward to the outside of the outer periphery of the second substrate W2. Thereby, the joining of the first substrate W1 and the second substrate W2 progresses concentrically from the central portion to the peripheral portion of the first substrate W1 and the second substrate W2, and FIG. As shown by d), it reaches the outer peripheral portions of the first substrate W1 and the second substrate W2.

  Finally, the bonding section 9 performs a predetermined heat treatment on the first substrate W1 and the second substrate W2. This increases the bonding force between the first substrate W1 and the second substrate W2, and completes the direct bonding between the first substrate W1 and the second substrate W2. The direct joining mechanism will be described later with reference to FIG.

  As described above, since the first substrate W1 and the second substrate W2 that have been temperature-controlled until just before are loaded into the bonding portion 9, the distortion caused by the temperature decrease is suppressed. The first substrate W1 and the second substrate W2 can be bonded. Therefore, according to the manufacturing apparatus 1, it is possible to improve the yield of a semiconductor device manufactured by bonding a pair of substrates W.

  Next, with reference to FIG. 7, a mechanism for joining the first substrate W1 and the second substrate W2 will be described. FIG. 7 is an explanatory diagram showing a bonding mechanism between the first substrate W1 and the second substrate W2 according to the embodiment.

  As shown in FIG. 7A, when a hydrophilic treatment is performed on the surfaces to be the bonding surfaces of the first substrate W1 and the second substrate W2, hydroxyl groups adhere to each bonding surface. In this state, when the first substrate W1 and the second substrate W2 are brought into contact with each other, as shown in FIG. 7B, the hydroxyl groups on the respective bonding surfaces function as bonds, and the first substrate W1. And a second substrate W2 form a hydrogen bonding layer.

  Thereafter, when heat treatment is performed on the first substrate W1 and the second substrate W2 at, for example, about 100 ° C., water molecules are evaporated from the hydrogen bonding layer as shown in FIG. 7C. As a result, as shown in FIG. 7D, silicon atoms at the bonding surfaces of the first substrate W1 and the second substrate W2 are chemically bonded via oxygen atoms, and the first substrate W1 and the first substrate W1 The second substrate W2 is firmly bonded.

  Next, processing executed by the control unit 10 will be described with reference to FIG. FIG. 8 is a flowchart illustrating processing executed by the control unit 10 of the manufacturing apparatus 1 according to the embodiment. As shown in FIG. 8, the control unit 10 first transfers the substrate W from the loading FOUPs 11 and 12 to the hydrophilization processing unit 6 by the robot 14 (step S101).

  Subsequently, the control unit 10 causes the hydrophilic treatment unit 6 to perform the hydrophilic treatment of the substrate W (step S102). Thereafter, the control unit 10 causes the robot 14 to transfer the substrate W from the hydrophilic treatment unit 6 to the temperature adjustment cleaning / drying unit 7 (step S103). Subsequently, the control unit 10 causes the temperature control cleaning / drying unit 7 to perform cleaning processing of the substrate W (step S104), and then causes the temperature control cleaning / drying unit 7 to perform temperature control drying processing of the substrate W (step S104). Step S105).

  Subsequently, the control unit 10 causes the robot 14 to transfer the substrate W from the temperature adjustment cleaning / drying unit 7 to the temperature adjustment alignment unit 8 (step S106). Then, the control unit 10 causes the temperature adjustment alignment unit 8 to perform the temperature adjustment alignment process for the substrate W (step S107).

  Subsequently, the control unit 10 causes the robot 14 to transfer the substrate W from the temperature adjustment positioning unit 8 to the bonding unit 9 (step S108), and causes the bonding unit 9 to perform bonding processing of the substrate W (step S109). . Finally, the control unit 10 causes the robot 14 to transfer the substrate W from the bonding unit 9 to the unloading FOUP 13 (step S110), and ends the process.

  As described above, in the method for manufacturing a semiconductor device according to the embodiment, the substrate is heated to a predetermined temperature during the period from the completion of the hydrophilic treatment of the surfaces of the pair of substrates to be bonded to the bonding of the pair of substrates. Adjust the temperature.

  Thereby, in the manufacturing method of the semiconductor device according to the embodiment, the pair of substrates can be bonded to each other in a state where the distortion of the substrate due to the temperature change is suppressed. Therefore, according to the manufacturing method of the semiconductor device according to the embodiment, the yield of the semiconductor device manufactured by bonding a pair of substrates can be improved.

  The above-described embodiment is an example, and various modifications can be made. For example, the manufacturing apparatus 1 may be configured to include the temperature adjustment cleaning / drying unit 7 and the temperature adjustment positioning unit 8 and not include the hydrophilic treatment unit 6 and the bonding unit 9. In such a case, the substrate W after the hydrophilic treatment is carried into the manufacturing apparatus 1.

  Then, the manufacturing apparatus 1 performs a cleaning process and a temperature control drying process on the substrate W that is carried in, and then performs a temperature control alignment process on the substrate W. The substrate W for which the temperature adjustment alignment process has been completed is unloaded to the unloading FOUP 13 by the robot 14, and then a bonding process is performed in another apparatus.

  Even with such a configuration, the manufacturing apparatus 1 can bond the pair of substrates W in a state in which distortion of the substrate W due to temperature change is suppressed by maintaining the substrate W before bonding at a predetermined temperature. The yield of a semiconductor device manufactured by bonding W can be improved.

  Moreover, the structure of the temperature control washing | cleaning drying part 7 is not limited to what is shown in FIG. 3, If the temperature-controlled fluid is made to contact the substrate W and the temperature of the substrate W is adjusted, Other configurations may be used. For example, the temperature control drying cleaning unit 7 may further include a temperature control unit that controls the temperature of the cleaning liquid C supplied from the cleaning liquid supply unit 73.

  According to this configuration, the temperature-controlled cleaning / drying unit 7 can reduce the temperature change (temperature decrease) of the substrate W during cleaning by cleaning the substrate W with the temperature-controlled cleaning liquid. In addition, when the temperature control washing | cleaning drying part 7 is provided with the temperature control part which temperature-controls the temperature of the washing | cleaning liquid C, the structure which does not include the temperature control part 75 which temperature-controls the gas G2 may be sufficient.

  Further, the configuration of the temperature adjustment position adjustment unit 8 is not limited to the configuration shown in FIG. 4, and any configuration that adjusts the temperature of the substrate W by bringing a temperature-controlled solid into contact with the substrate W can be used. Other configurations may be used. For example, the temperature adjustment position adjustment unit 8 may further include a sheet placed on the wafer stage 81 and placed on the upper surface of the rotating substrate W, and a temperature adjustment unit that regulates the temperature of the sheet.

  In addition, when setting it as this structure, the structure which does not include the temperature control part 84 shown in FIG. Even in such a configuration, the temperature adjustment alignment unit 8 is a semiconductor manufactured by bonding a pair of substrates W by maintaining the substrate W at a predetermined temperature until immediately before the substrate W is unloaded toward the bonding unit 9. The yield of the apparatus can be improved.

  Further, the temperature sensor 78 shown in FIG. 3 and the temperature sensor 85 shown in FIG. 4 may be omitted. In such a case, the temperature-controlled cleaning / drying unit 7 sprays, for example, a gas G <b> 2 having a temperature 2 ° C. to 3 ° C. higher than the above-described predetermined temperature onto the substrate W regardless of the temperature of the substrate W during the cleaning of the substrate W. Also with such a configuration, the temperature adjustment cleaning / drying unit 7 can appropriately adjust the temperature of the substrate W.

  In addition, the temperature adjustment alignment unit 8 maintains the temperature of the wafer stage 81 at a temperature 2 ° C. to 3 ° C. higher than the predetermined temperature described above, for example, regardless of the temperature of the substrate W. Also with such a configuration, the temperature adjustment alignment unit 8 can appropriately adjust the temperature of the substrate W.

  Further, in the above-described embodiment, the case where the temperature of the substrate W is controlled by bringing the temperature-controlled fluid or solid into contact with the substrate W has been described. The structure which controls temperature by exposing to may be sufficient.

  In addition, the manufacturing apparatus 1 air-conditions all or some of the internal atmosphere temperature of the transfer chamber 2, the hydrophilization processing unit 6, the temperature control washing / drying unit 7, the temperature control alignment unit 8, and the bonding unit 9. The temperature may be controlled by an apparatus. Also with these configurations, the manufacturing apparatus 1 can appropriately control the temperature of the substrate W.

  In the above-described embodiment, the case where the temperature of both the first substrate W1 and the second substrate W2 is controlled has been described, but either one of the substrates W to be temperature controlled may be used. In such a case, the temperature of at least the first substrate W1 on which the semiconductor element is formed is controlled. Thereby, according to the manufacturing apparatus 1, the yield of the semiconductor device to manufacture can be improved rather than the other manufacturing apparatus which does not adjust the temperature of the board | substrate W. FIG.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 1 Manufacturing apparatus, 2 Transfer chamber, 6 Hydrophilization processing part, 7 Temperature control washing drying part, 8 Temperature control positioning part, 9 Joining part, 11, 12 FOUP for carrying in, 13 FOUP for carrying out, 14 Robots, 75, 84 Temperature control unit, W substrate, W1 first substrate, W2 second substrate

Claims (5)

Performing a hydrophilic treatment on each surface to be a bonding surface of a pair of substrates to be bonded;
Adjusting the temperature of at least one of the pair of substrates to a predetermined temperature in a period before the surfaces subjected to the hydrophilization treatment are bonded to each other;
Bonding the pair of substrates whose at least one substrate is temperature-controlled at the predetermined temperature. A method for manufacturing a semiconductor device, comprising: The method for manufacturing a semiconductor device according to claim 1, further comprising: controlling the temperature of the at least one substrate by bringing a temperature-controlled fluid into contact with the substrate. The method for manufacturing a semiconductor device according to claim 1, further comprising: controlling the temperature of the at least one substrate by bringing a temperature-controlled solid into contact with the substrate. The predetermined temperature is
After the surfaces of the pair of substrates subjected to the hydrophilization treatment are bonded to each other, the temperature is substantially the same as a temperature in a processing chamber in which a photolithography process is performed on the at least one substrate. The manufacturing method of the semiconductor device of Claim 1 or Claim 2 containing. A hydrophilic treatment portion that performs a hydrophilic treatment on each surface to be a joining surface of a pair of substrates to be joined;
Washing and drying the substrate that has been subjected to the hydrophilization treatment, and a temperature control cleaning and drying unit that controls the temperature of the substrate to a predetermined temperature;
While performing the alignment of the substrate that has been washed and dried, a temperature adjustment alignment unit that adjusts the temperature of the substrate to a predetermined temperature;
A bonding portion for bonding the pair of substrates subjected to the alignment;
An apparatus for manufacturing a semiconductor device, comprising: the hydrophilization processing unit, the temperature control washing / drying unit, the temperature control positioning unit, and a control unit that controls operations of the bonding unit.

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