JP2014192326A - Optical semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor device manufacturing method which can obtain an optical semiconductor device excellent in reliability of emission by improving accuracy of a manufacturing condition while achieving improvement in manufacturing efficiency even though a B-stage phosphor sheet is used.SOLUTION: An optical semiconductor device manufacturing method comprises: a trial production process S1 of experimentally producing and evaluating a trial product 6; a determination process S2 of determining a manufacturing condition for manufacturing an LED device 1; and a manufacturing process S3 of manufacturing the LED device 1 based on the manufacturing condition determined in the determination process S2, in which an LED 3 is covered with a B-stage phosphor sheet 2 and the B-stage phosphor sheet 2 is transformed to a C-stage phosphor sheet. The trial production process S1 includes: a varnish preparation process S5 for preparing varnish containing phosphor and hardening resin; a B-stage transformation process S6 of forming the B-stage phosphor sheet 2 from the varnish; a C-stage transformation process S7 of transforming the B-stage phosphor sheet 2 to the C-stage phosphor sheet 2; and an evaluation process S8 of evaluating the C-stage phosphor sheet 2.

Description

  The present invention relates to an optical semiconductor device manufacturing method, and more particularly to an optical semiconductor device manufacturing method in which an optical semiconductor element is covered with a phosphor sheet.

  Conventionally, it is known to manufacture an LED device by covering and sealing an LED with a phosphor sheet containing a phosphor.

  In such an LED device, the wavelength of light emitted from the LED is converted by a phosphor sheet, and the wavelength-converted light is irradiated to the outside.

  In addition to the emission wavelength of the LED, the color temperature of the light emitted from the LED device further includes, for example, optical characteristics of the phosphor sheet, specifically, the shape of the phosphor sheet, the arrangement of the phosphor sheet with respect to the LED, the fluorescence This greatly depends on the phosphor content in the body sheet.

  Then, the following method is proposed as a manufacturing method of the LED device which can irradiate the light of desired color temperature (for example, refer the following patent document 1).

  That is, in Patent Document 1, a phosphor sheet is pre-formed from a flexible capsule material into which a phosphor is injected, and this phosphor sheet is placed on an LED mounted on a substrate, and then a voltage is applied to the LED. The LED is allowed to emit light, and the color temperature is measured and inspected.

  In the inspection, if the color temperature is appropriate, after the inspection, the phosphor sheet is cured by heating and is permanently laminated to the LED and the substrate.

  On the other hand, if the color temperature is not appropriate in the inspection, after the inspection, the phosphor sheet is peeled off from the LED and the substrate, and then another type of phosphor sheet is again placed on the LED mounted on the substrate, and then Inspect as above.

  In the method proposed in Patent Document 1, if the color temperature is not appropriate, the phosphor sheet is replaced with another phosphor sheet, while the LED mounted on the substrate can be reused as it is. It is improving.

JP 2007-123915 A

  However, in the method proposed in Patent Document 1 described above, the phosphor layer before curing is likely to be deformed such as warpage accompanying curing shrinkage due to curing, so that the phosphor layer of the light emitted from the LED The optical path length at is changed. Therefore, a large shift (variation) occurs between the optical characteristics of the cured phosphor layer and the optical characteristics of the phosphor layer before curing at the time of inspection.

  As a result, there is a problem that the target LED device is difficult to obtain.

  Further, in the method proposed in Patent Document 1, when the phosphor sheet before curing is cured before the inspection, if the color temperature is not appropriate in the inspection, the C-staged phosphor sheet is replaced with the substrate and Since it is adhered to the LED, there is a problem that the substrate and the LED cannot be reused.

  Furthermore, according to the method proposed in Patent Document 1, each product is inspected to determine whether or not the color temperature is appropriate. If not, the phosphor sheet is replaced each time. Therefore, there is a problem that the manufacturing efficiency of the LED device cannot be sufficiently improved.

  An object of the present invention is to provide an optical semiconductor device capable of obtaining an optical semiconductor device having excellent light emission reliability by improving the accuracy of manufacturing conditions while improving the manufacturing efficiency while using a phosphor sheet of a B stage. It is in providing the manufacturing method of.

  In order to achieve the above object, an optical semiconductor device manufacturing method of the present invention is an optical semiconductor device manufacturing method in which an optical semiconductor element is covered with a phosphor sheet. Based on the evaluation of the prototype, a determination step for determining manufacturing conditions for manufacturing the optical semiconductor device, and the phosphor sheet of the B stage based on the manufacturing conditions determined in the determination step. A manufacturing process for manufacturing the optical semiconductor device, which covers the optical semiconductor element and forms the phosphor sheet into a C-stage, wherein the prototype process is a varnish preparation process for preparing a varnish containing a phosphor and a curable resin, A B-stage process for forming the B-stage phosphor sheet from the varnish, a C-stage process for converting the B-stage phosphor sheet into a C-stage, and It is characterized by comprising an evaluation step of evaluating the phosphor sheet C stage.

  According to this method, the determining step determines manufacturing conditions based on evaluation of a prototype including a C-stage phosphor sheet. The manufacturing process manufactures the optical semiconductor device based on the manufacturing conditions determined in the determining process.

  If it does so, the fluorescent substance sheet of the prototype used as evaluation object will be a C stage. For this reason, in the manufacturing conditions, a change in optical characteristics due to the above-described C-staging is considered in the phosphor sheet.

  As a result, in the manufacturing process, an optical semiconductor device having excellent light emission reliability can be manufactured.

  In addition, since the optical semiconductor device is manufactured based on the manufacturing conditions determined based on the evaluation of the prototype, the optical semiconductor device can be mass-produced with excellent accuracy. Therefore, the manufacturing efficiency of the optical semiconductor device can be sufficiently improved.

  In the optical semiconductor device manufacturing method of the present invention, in the C-stage forming step, the optical semiconductor element is covered with the phosphor sheet, and in the evaluation step, the optical semiconductor element is covered with the phosphor sheet. It is preferable to evaluate the optical semiconductor device.

  According to this method, in the C-staging step, the optical semiconductor element is covered with the phosphor sheet. That is, a prototype in which an optical semiconductor element is covered with a phosphor sheet and an optical semiconductor device as an actual product can have the same configuration.

  Therefore, it is possible to determine the manufacturing conditions of the actual product based on the evaluation of the prototype that has the same configuration as the actual product.

  As a result, manufacturing conditions can be determined with higher accuracy, and an optical semiconductor device that is more excellent in light emission reliability can be manufactured.

  Further, in the method of manufacturing an optical semiconductor device of the present invention, the trial production process includes the trial production conditions for producing the prototype this time, based on the trial production conditions and evaluation information on the trial production of the prototype before this time, It is preferable to further include a trial condition determination step for determining.

  According to this method, the prototyping conditions for prototyping the prototype are determined based on the prototyping conditions and evaluation information for prototyping the prototype before this time. The accuracy of the manufacturing conditions can be improved based on the accumulated trial production conditions and evaluation. Therefore, an optical semiconductor device having excellent light emission reliability can be obtained.

  According to the present invention, manufacturing conditions can be determined with higher accuracy, and an optical semiconductor device that is more excellent in light emission reliability can be obtained. In addition, the manufacturing efficiency of the optical semiconductor device can be sufficiently improved.

FIG. 1 shows a flowchart of a manufacturing method of an LED device which is an embodiment of a manufacturing method of an optical semiconductor device of the present invention. FIG. 2 shows a flowchart of the prototype process shown in FIG. FIG. 3 shows a flowchart of the manufacturing process shown in FIG. FIG. 4 is a drawing for explaining the varnish preparation step in the trial production step of FIG. FIG. 5 is a drawing for explaining the application of varnish in the B-stage forming process in the prototype process of FIG. FIG. 6 is a drawing for explaining the heating of the varnish in the B-staging process in the prototype process of FIG. FIG. 7 is a drawing for explaining a state before the LED is covered with the B-stage phosphor sheet, which is a C-stage process in the prototype process of FIG. FIG. 8 is a diagram for explaining the state after the LED is covered with the phosphor sheet of the B stage, which is the C stage forming step in the prototype process of FIG. FIG. 9 is a modification of the prototype process shown in FIG.

  With reference to FIGS. 1-8, the manufacturing method of the LED apparatus 1 which is one Embodiment of the manufacturing method of the optical semiconductor device of this invention is demonstrated.

  The manufacturing method of the LED device 1 is a method of manufacturing the LED device 1 as an optical semiconductor device in which the phosphor sheet 2 covers the LED 3 as an optical semiconductor element, as shown in FIG.

  As shown in FIG. 1, the manufacturing method of the LED device 1 determines a manufacturing condition for manufacturing the LED device 1 based on a prototype process S <b> 1 in which the prototype 6 is prototyped and evaluated, and the evaluation of the prototype 6. A manufacturing process for manufacturing the LED device 1 in which the LED 3 is covered with the phosphor sheet 2 of the B stage and the phosphor sheet 2 is converted to the C stage based on the determination process S2 and the manufacturing conditions determined in the determination process. S3 is provided.

[Prototype production process S1]
The trial production process S1 uses the same production apparatus (production equipment) as the production process S3 described below. In addition, the prototype process S1 prototypes a relatively small amount of the prototype 6 as compared with the LED device 1 that is mass-produced in the manufacturing process S3. The number of LED devices 1 to be prototyped in the prototype process S1 is, for example, 100 or less, preferably 10 or less, for example, 1 or more. That is, in the trial production process S1, the prototype 6 is produced on a small scale. The number of LED devices 1 is counted as one corresponding to one substrate 5 regardless of the number of LEDs 3.

  As shown in FIG. 2, the trial production step S1 includes a trial production condition determination step S4, a varnish preparation step S5 for preparing a varnish containing a phosphor and a curable resin, and a B stage for forming a B stage phosphor sheet 2 from the varnish. Step S6, a C-stage forming step S7 for converting the B-stage phosphor sheet 2 into a C-stage, and an evaluation step S8 for evaluating the C-stage phosphor sheet 2 are provided.

  In the trial production process S1, each of the varnish preparation process S5, the B-stage production process S6, and the C-stage production process S7 is performed based on the trial production conditions determined in the trial production condition determination process S4.

<Prototype Condition Determination Step S4>
The trial production condition determination step S4 is a process of determining the trial production conditions for making the prototype 6 this time based on the trial production conditions for producing the prototype 6 before this time and information on evaluation.

  Examples of the information on the trial production conditions include information on the varnish, information on the substrate 5, information on the phosphor sheet 2, and the like. Information on the varnish includes, for example, the blending ratio of the phosphor, the average value of the maximum length (average particle diameter in the case of a spherical shape), the absorption peak wavelength, for example, the type of curable resin of the A stage, the viscosity , And the mixing ratio. Information on the substrate 5 includes, for example, the outer shape, dimensions, and surface shape (with or without recesses) of the substrate 5, for example, the shape, dimensions, emission peak wavelength of the LED 3 mounted on the substrate 5, and the unit area of the substrate 5. Examples include the number of LEDs 3 mounted, the number of LEDs 3 mounted per substrate 5, and the like. Information on the phosphor sheet 2 includes, for example, application conditions of the varnish 7 (specifically, shape, thickness, etc. of the varnish 7), heating conditions of the varnish 7 in B-stage formation, irradiation conditions of active energy rays, for example, The heating condition of the phosphor sheet 2 in the C stage, the irradiation condition of the active energy ray, the pressing condition, the thickness of the phosphor sheet 2 of the C stage and the like can be mentioned.

  Examples of the evaluation information include the color temperature of the prototype 6, the total luminous flux of the prototype 6, and the like.

  In order to determine the prototype condition, the prototype condition for the trial production is determined based on the past trial conditions and evaluation information so that the target of the LED device 1 to be prototyped is the color temperature and / or the total luminous flux. To do.

  Note that prototype conditions and evaluation information prototyped before this time are stored in a memory of a computer that manages the steps of the manufacturing method.

<Varnish preparation step S5>
In the varnish preparation step S5, first, each of a phosphor and a curable resin is prepared, and these are mixed to prepare a varnish as a phosphor-containing curable resin composition.

  The phosphor has a wavelength conversion function, and examples thereof include a yellow phosphor capable of converting blue light into yellow light, and a red phosphor capable of converting blue light into red light.

Examples of the yellow phosphor include silicate phosphors such as (Ba, Sr, Ca) ₂ SiO ₄ ; Eu, (Sr, Ba) ₂ SiO ₄ : Eu (barium orthosilicate (BOS)), for example, Y ₃ Al Garnet-type phosphors having a garnet-type crystal structure such as ₅ O ₁₂ : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb ₃ Al ₃ O ₁₂ : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca-α-SiAlON.

Examples of the red phosphor include nitride phosphors such as CaAlSiN ₃ : Eu and CaSiN ₂ : Eu.

  Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape. Preferably, spherical shape is mentioned from a fluid viewpoint.

  The average value of the maximum length of the phosphor (in the case of a spherical shape, the average particle diameter) is, for example, 0.1 μm or more, preferably 1 μm or more, and for example, 2 μm or less, preferably 100 μm or less. It is.

  The absorption peak wavelength of the phosphor is, for example, 300 nm or more, preferably 430 nm or more, and, for example, 550 nm or less, preferably 470 nm or less.

  The phosphors can be used alone or in combination.

  The blending ratio of the phosphor is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 80 parts by mass or less, preferably 50 parts by mass with respect to 100 parts by mass of the curable resin. Or less.

  As the curable resin, for example, it has a two-stage reaction mechanism, and is a two-stage that is B-staged (semi-cured) by the first-stage reaction and C-staged (completely cured) by the second-stage reaction. Examples thereof include curable resins.

  As the two-stage curable resin, for example, a two-stage curable thermosetting resin that is cured by heating, for example, two-stage curable active energy beam curing that is cured by irradiation with active energy rays (for example, ultraviolet rays, electron beams, etc.). For example, a functional resin. Preferably, a two-stage curable thermosetting resin is used.

  Specifically, examples of the two-stage curable thermosetting resin include silicone resin, epoxy resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin. Preferably, a two-stage curable silicone resin is used from the viewpoint of translucency and durability.

  Examples of the two-stage curable silicone resin include a condensation reaction / addition reaction curable silicone resin having two reaction systems of a condensation reaction and an addition reaction.

  Examples of such a condensation reaction / addition reaction curable silicone resin include a first condensation reaction containing a silanol-terminated polysiloxane, an alkenyl group-containing trialkoxysilane, an organohydrogenpolysiloxane, a condensation catalyst, and a hydrosilylation catalyst. Addition reaction curable silicone resin, for example, silanol group-terminated polysiloxane (see formula (1) described later), ethylenically unsaturated hydrocarbon group-containing silicon compound (see formula (2) described later), ethylenically unsaturated Second condensation reaction / addition reaction curable silicone resin containing a hydrocarbon group-containing silicon compound (see formula (3) described later), organohydrogenpolysiloxane, condensation catalyst and hydrosilylation catalyst, for example, both-end silanol type Silicone oil, dialkoxyal containing alkenyl group A third condensation reaction / addition reaction curable silicone resin containing a silane, an organohydrogenpolysiloxane, a condensation catalyst and a hydrosilylation catalyst, for example, an organopolysiloxane having at least two alkenylsilyl groups in one molecule; Fourth polycondensation / addition reaction curable silicone resin containing an organopolysiloxane having at least two hydrosilyl groups in the molecule, a hydrosilylation catalyst and a curing retarder, such as at least two ethylenically unsaturated hydrocarbon groups First organopolysiloxane having at least two hydrosilyl groups in one molecule, second organopolysiloxane having no ethylenically unsaturated hydrocarbon group and having at least two hydrosilyl groups in one molecule, hydrosilylation Catalyst and hydrosilylation A fifth condensation reaction / addition reaction curable silicone resin containing an agent, for example, a first organopolysiloxane having at least two ethylenically unsaturated hydrocarbon groups and at least two silanol groups in one molecule; Sixth condensation / addition reaction curing containing a second organopolysiloxane that does not contain an ethylenically unsaturated hydrocarbon group and has at least two hydrosilyl groups in one molecule, a hydrosilylation inhibitor, and a hydrosilylation catalyst Type silicone resin, for example, a silicon compound and a seventh condensation reaction / addition reaction curing type silicone resin containing a boron compound or an aluminum compound, for example, an eighth condensation reaction containing polyaluminosiloxane and a silane coupling agent -Addition reaction curable silicone resin and the like.

  The condensation reaction / addition reaction curable silicone resin is preferably a second condensation reaction / addition reaction curable silicone resin, and specifically described in detail in JP 2010-265436 A, for example. , Silanol-terminated polydimethylsiloxane, vinyltrimethoxysilane, (3-glycidoxypropyl) trimethoxysilane, dimethylpolysiloxane-co-methylhydrogenpolysiloxane, tetramethylammonium hydroxide and platinum-carbonyl complex To do. Specifically, the second condensation reaction / addition reaction curable silicone resin is, for example, an ethylenically unsaturated hydrocarbon group-containing silicon compound and an ethylenically unsaturated hydrocarbon group-containing silicon compound, which are condensation materials, It is prepared by adding a condensation catalyst all at once, then adding an organohydrogenpolysiloxane as an addition raw material, and then adding a hydrosilylation catalyst (addition catalyst).

  Thus, an A-stage two-stage curable resin is prepared.

The viscosity of the A-stage two-stage curable resin is, for example, 3000 mPa · s or more, preferably 5000 mPa · s or more, and, for example, 20000 mPa · s or less, preferably 11000 mPa · s or less. The viscosity of the A-stage two-stage curable resin is measured at a rotational speed of 99 s ⁻¹ using an E-type cone after adjusting the temperature of the A-stage two-stage curable resin to 25 ° C. The following viscosities are measured by the same method as described above.

  The blending ratio of the two-stage curable resin is, for example, 30% by mass or more, preferably 40% by mass or more, and more preferably 50% by mass or more with respect to the phosphor-containing curable resin composition (varnish). For example, it is 98 mass% or less, Preferably, it is 95 mass% or less, More preferably, it is 90 mass% or less.

  Moreover, a filler and / or a solvent can also be contained in the phosphor-containing curable resin composition as necessary.

  Examples of the filler include organic fine particles such as silicone particles (specifically, including silicone rubber particles), inorganic fine particles such as silica (for example, fumed silica), talc, alumina, aluminum nitride, and silicon nitride. Is mentioned. Further, the average value of the maximum length of the filler (in the case of a spherical shape, the average particle diameter) is, for example, 0.1 μm or more, preferably 1 μm or more, and, for example, 200 μm or less, preferably 100 μm or less. The filler can be used alone or in combination. The blending ratio of the filler is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 70 parts by mass or less, preferably 100 parts by mass of the curable resin. It is 50 parts by mass or less.

  Examples of the solvent include aliphatic hydrocarbons such as hexane, aromatic hydrocarbons such as xylene, and siloxanes such as vinylmethyl cyclic siloxane and both-end vinyl polydimethylsiloxane. The solvent is blended in the phosphor-containing curable resin composition at a blending ratio such that the phosphor-containing curable resin composition has a viscosity described later.

  In order to prepare the phosphor-containing curable resin composition, a two-stage curable resin, a phosphor, and a filler and / or a filler to be blended as necessary are blended and mixed.

  To prepare the phosphor-containing curable resin composition, specifically, as shown in FIG. 4, each component described above in the mixing container 52 including the stirrer 51 was determined in the determination step S2. Information on the varnish, specifically, for example, the blending ratio of the phosphor, the absorption peak wavelength of the phosphor, the average value of the maximum length (average particle diameter in the case of a spherical shape), for example, curing of the A stage Based on the type of resin, viscosity, blending ratio, etc. Subsequently, they are mixed using a stirrer 51.

  Thus, the varnish is prepared as an A stage phosphor-containing curable resin composition.

  The viscosity of the varnish at 25 ° C. and 1 atm is, for example, 1,000 mPa · s or more, preferably 4,000 mPa · s or more, and, for example, 1,000,000 mPa · s or less, preferably , 100,000 mPa · s or less.

<B-stage process S6>
In the B-stage forming step S6 shown in FIG. 2, the B-stage phosphor sheet 2 is formed from the varnish.

  In order to form the B-stage phosphor sheet 2, for example, first, varnish is applied to the surface of the release sheet 4 as shown in FIG. 5.

  Examples of the release sheet 4 include polymer films such as polyethylene films and polyester films (such as PET), for example, ceramic sheets, such as metal foil. Preferably, a polymer film is used. Further, the surface of the release sheet 4 can be subjected to a peeling treatment such as a fluorine treatment. Moreover, the shape of the release sheet 4 is not specifically limited, For example, it is formed in planar view substantially rectangular shape (a strip shape and long shape are included) etc.

  In order to apply the varnish to the surface of the release sheet 4, for example, an application device such as a dispenser, an applicator, or a slit die coater is used. Preferably, a dispenser 13 shown in FIG. 5 is used.

  Further, the varnish is applied to the release sheet 4 so that the thickness of the phosphor sheet 2 is, for example, 10 μm or more, preferably 50 μm or more, and, for example, 2000 μm or less, preferably 1000 μm or less.

  The varnish 7 is applied in an appropriate shape such as a substantially rectangular shape (including a strip shape and a long shape), for example, a circular shape in a plan view. The varnishes 7 constituting the above-described shape may be formed at intervals.

  Further, the varnish 7 is applied to, for example, a release sheet 4 having a substantially rectangular shape (excluding a long shape) in plan view, and a B-stage to be described below is used to form a single-wafer type phosphor sheet 2, Or it can also apply | coat continuously to the elongate release sheet 4, and can also be set as the continuous fluorescent substance sheet 2 by B-stage formation demonstrated below. In addition, when the fluorescent substance sheet 2 is made into a single-wafer | sheet-fed type, Comprising: When manufacturing the several fluorescent substance sheet 2 in the same release sheet 4, the varnish 7 is apply | coated intermittently.

  Thereafter, the applied varnish 7 is B-staged (semi-cured).

  When the varnish 7 contains a two-stage curable thermosetting resin, for example, the applied varnish 7 is heated.

  In order to heat the varnish 7, for example, as shown in FIG. 6, an oven 55 including a heater 54 disposed on the upper side and / or the lower side of the release sheet 4 is used.

  As for the heating conditions, the heating temperature is, for example, 40 ° C. or higher, preferably 80 ° C. or higher, more preferably 100 ° C. or higher, and for example, 200 ° C. or lower, preferably 150 ° C. or lower, more preferably, 140 ° C. or lower. The heating time is, for example, 1 minute or more, preferably 5 minutes or more, more preferably 10 minutes or more, and for example, 24 hours or less, preferably 1 hour or less, more preferably 0.5 hours. It is as follows.

  Alternatively, when the varnish 7 contains a two-stage curable active energy ray-curable resin, the varnish 7 is irradiated with active energy rays. Specifically, the varnish 7 is irradiated with ultraviolet rays using an ultraviolet lamp or the like.

  As a result, the varnish 7 is B-staged (semi-cured) but not C-staged (completely cured), that is, the phosphor sheet 2 before C-staged (completely cured), that is, the B-staged phosphor. A sheet 2 is formed.

  As a result, as shown in FIG. 6, a B-stage phosphor sheet 2 laminated on the surface of the release sheet 4 is manufactured.

  Specifically, the application conditions of the varnish 7 (specifically, the shape and thickness of the varnish 7) determined in the determination step S2, the heating conditions of the varnish 7 in the B-stage, and the active energy ray irradiation conditions Based on the varnish 7, the B-stage phosphor sheet 2 is formed.

  The compression elastic modulus at 25 ° C. of the phosphor sheet 2 manufactured in the sheet manufacturing step S3 is, for example, 0.040 MPa or more, preferably 0.050 MPa or more, more preferably 0.075 MPa or more, and further preferably, For example, it is 0.145 MPa or less, preferably 0.140 MPa or less, more preferably 0.135 MPa or less, and further preferably 0.125 MPa or less.

  When the compression elastic modulus exceeds the above upper limit, when the LED 3 is covered with the phosphor sheet 2 in the C-staging step S7 and the LED 3 is wire-bonded to the substrate 5, a wire (not shown) ) May be deformed.

  On the other hand, if the compression modulus is less than the lower limit, it is difficult to ensure the shape of the phosphor sheet 2. That is, the varnish 7 may not form the shape of the phosphor sheet 2.

  Thereafter, if necessary, the continuous B-stage phosphor sheet 2 can be cut into a predetermined shape together with the continuous release sheet 4 to obtain a single-wafer phosphor sheet 2.

<C-stage process S7>
In the C-stage forming step S7 shown in FIG. 2, as shown in FIGS. 7 and 8, first, the LED 3 is covered with the B-stage phosphor sheet 2, and then the B-stage phosphor sheet 2 is made into the C-stage. To do.

  In order to cover the LEDs 3 with the B-stage phosphor sheet 2, as shown in FIG. 7, first, a substrate 5 on which the LEDs 3 are mounted is prepared.

  The substrate 5 is made of an insulating substrate such as a silicon substrate, a ceramic substrate, a polyimide resin substrate, or a laminated substrate in which an insulating layer is laminated on a metal substrate.

  Further, on the surface of the substrate 5, a conductor pattern (not shown) including electrodes (not shown) for electrical connection with terminals (not shown) of the LEDs 3 to be described next and wirings continuous therewith. ) Is formed. The conductor pattern is formed from a conductor such as gold, copper, silver, or nickel.

  Further, the surface of the substrate 5 is formed flat. Or although not shown in figure, the recessed part dented toward the downward direction may be formed in the surface in which LED3 in the board | substrate 5 is mounted.

  The external shape of the board | substrate 5 is not specifically limited, For example, planar view substantially rectangular shape, planar view substantially circular shape, etc. are mentioned. The dimensions of the substrate 5 are appropriately selected. For example, the maximum length is, for example, 2 mm or more, preferably 10 mm or more, and for example, 300 mm or less, preferably 100 mm or less.

  The LED 3 is an optical semiconductor element that converts electrical energy into light energy. For example, the LED 3 is formed in a substantially rectangular shape in cross-sectional view whose thickness is shorter than the length in the surface direction (length in the direction perpendicular to the thickness direction).

  Examples of the LED 3 include a blue LED (light emitting diode element) that emits blue light. The dimensions of the LED 3 are appropriately set according to the application and purpose. Specifically, the thickness is, for example, 10 to 1000 μm, and the maximum length is, for example, 0.05 mm or more, preferably 0.1 mm or more. For example, it is 5 mm or less, preferably 2 mm or less.

  The emission peak wavelength of the LED 3 is, for example, 400 nm or more, preferably 430 nm or more, and, for example, 500 nm or less, preferably 470 nm or less.

  The LED 3 is flip-chip mounted or connected to the substrate 5 by wire bonding, for example.

  Further, a plurality of LEDs 3 (three in FIG. 7) can be mounted on one substrate 5 as shown in FIG. The number of LEDs 3 mounted on one substrate 5 is, for example, 1 or more, preferably 4 or more, and for example, 2000 or less, preferably 400 or less.

  The substrate 5 on which the LED 3 is mounted is mounted on the information related to the substrate 5 determined in the determination step S2, for example, the outer shape, dimensions, and surface shape (the presence or absence of a recess) of the substrate 5, for example, the substrate 5. The LED 3 is selected and prepared based on the shape and size of the LED 3, the emission peak wavelength of the LED 3, the number of mounted LEDs 3 per unit area of the substrate 5, the number of mounted LEDs 3 per substrate 5, and the like.

  Next, in this method, the substrate 5 on which the LEDs 3 are mounted is placed on the press machine 20 shown in FIG.

  As the press machine 20, for example, a flat plate press machine including two flat plates 21 that are opposed to each other with an interval in the vertical direction is adopted.

  In order to install the board 5 on which the LEDs 3 are mounted on the press machine 20 shown in FIG. 7, specifically, the board 5 on which the LEDs 3 are mounted is installed on the lower flat plate 21.

  Subsequently, the phosphor sheet 2 (see FIG. 6) laminated on the upper surface of the release sheet 4 is turned upside down so as to face the LED 3. That is, the phosphor sheet 2 is arranged so as to face the LED 3.

  Next, as shown in FIG. 8, the LED 3 is covered with the phosphor sheet 2. Specifically, the LED 3 is embedded with the phosphor sheet 2.

  Moreover, LED3 is coat | covered with the fluorescent substance sheet 2 based on the press conditions determined in determination process S2.

  Specifically, as shown by the arrow in FIG. 7, the phosphor sheet 2 is lowered (pressed down). Specifically, the phosphor sheet 2 is pressed against the substrate 5 on which the LEDs 3 are mounted.

  The pressing pressure is, for example, 0.05 MPa or more, preferably 0.1 MPa or more, and for example, 1 MPa or less, preferably 0.5 MPa or less.

  Thereby, the LED 3 is covered with the phosphor sheet 2. That is, the LED 3 is embedded in the phosphor sheet 2.

  Thus, the LED 3 is sealed with the phosphor sheet 2.

  Thereafter, the phosphor sheet 2 is changed to the C stage.

  For example, the phosphor sheet 2 is converted to the C stage based on the heating condition of the phosphor sheet 2 and the irradiation condition of the active energy ray determined in the determination step S2.

  Specifically, when the two-stage curable resin is a two-stage curable thermosetting resin, the phosphor sheet 2 is heated. Specifically, it is put into the oven while maintaining the pressed state of the phosphor sheet 2 by the flat plate 21. Thereby, the phosphor sheet 2 is heated.

  The heating temperature is, for example, 80 ° C. or higher, preferably 100 ° C. or higher, and for example, 200 ° C. or lower, preferably 180 ° C. or lower. The heating time is, for example, 10 minutes or more, preferably 30 minutes or more, and for example, 10 hours or less, preferably 5 hours or less.

  The phosphor sheet 2 is C-staged (completely cured) by heating the phosphor sheet 2.

  When the two-stage curable resin is a two-stage curable active energy ray curable resin, the phosphor sheet 2 is irradiated with active energy rays to make the phosphor sheet 2 C-staged (completely cured). Let Specifically, the phosphor sheet 2 is irradiated with ultraviolet rays using an ultraviolet lamp or the like.

  Thus, a prototype 6 including the phosphor sheet 2, the LED 3 sealed by the phosphor sheet 2, and the substrate 5 on which the LED 3 is mounted is manufactured as a prototype.

  In FIG. 8, a plurality of (three) LEDs 3 are provided in one prototype 6.

  Thereafter, the release sheet 4 is peeled off from the phosphor sheet 2 as indicated by a virtual line in FIG.

  After that, if necessary, when a plurality of LEDs 3 are mounted on one substrate 5, the phosphor sheet 2 can be cut into pieces corresponding to each LED 3.

<Evaluation process S8>
In the evaluation step S8, in order to evaluate the C-stage phosphor sheet 2, for example, the conductor pattern of the substrate 5 of the prototype 6 (specifically, the prototype 6 in which the LED 3 is covered with the phosphor sheet 2) ( A lighting test is performed in which a current is supplied to the LED 3 and the LED 3 emits light.

  Specifically, in the lighting test, a current is passed through the substrate 5 of the prototype 6, and the color temperature and / or total luminous flux of the light immediately after the current is passed is measured.

  Specifically, when the prototype 6 is subjected to a lighting test, the measured value of the color temperature of light is recorded as an evaluation of the prototype 6 in the recording step S9 shown in FIG.

  Specifically, in the recording step S9, the prototype conditions and evaluation of the prototype 6 are recorded and stored as information on the past (previous) prototype 6.

[Decision step S2]
The determination step S2 is a step performed after the trial production step S1. In the determination step S <b> 2, manufacturing conditions for manufacturing the LED device 1 are determined based on the evaluation of the prototype 6.

  For example, the manufacturing conditions are determined based on the prototype conditions and evaluation recorded in the prototype process S1.

  Specifically, if the measured value of the color temperature of the light of the prototype 6 is within the target range, the prototype condition recorded in the recording step S9 becomes the manufacturing condition as it is.

  When the target light color is daylight white, the target color temperature is, for example, 4600K or more, and, for example, 5500K or less. In addition, when the target light color is warm white, the target color temperature is, for example, 3250K or higher, and for example, 3800K or lower.

  On the other hand, if the measured value of the color temperature of the light of the prototype 6 is outside the target range, the manufacturing conditions are determined from the prototype condition and evaluation recorded in the recording step S9 so that the target color temperature is obtained. . Specifically, the trial production conditions are corrected so as to obtain the target color temperature, and the manufacturing conditions are set. For example, as described above, information on the varnish, information on the substrate 5, and information on the phosphor sheet 2 are corrected, preferably information on the varnish is corrected, and more preferably, the blending ratio of the phosphor and the shape of the phosphor The average value of the maximum length of the phosphor, the absorption peak wavelength of the phosphor, etc. are corrected to obtain the manufacturing conditions.

[Manufacturing process S3]
As shown in FIG. 1, the manufacturing process S3 is a process performed after the determination process S2. The manufacturing process S3 is a process of manufacturing the LED device 1 based on the manufacturing conditions determined in the determination process S2.

  As shown in FIG. 3, the manufacturing process S3 includes a varnish preparation process S11, a B-stage forming process S12, and a C-stage forming process S13.

  In the production process S3 (FIG. 1), the varnish preparation process in the trial production process S1 is performed except that each of the varnish preparation process S11, the B-stage formation process S12, and the C-stage formation process S13 is based on the production conditions determined in the determination process S2. S5, the B-stage forming step S6, and the C-stage forming step S7 are performed in the same manner (FIG. 2).

  Thereby, the LED device 1 having the same structure as the prototype 6 is manufactured.

  The number of LED devices 1 to be mass-produced in the manufacturing process S3 is, for example, 100 or more, preferably 500 or more, more preferably 1000 or more, and for example, 100000 or less.

  And according to this method, determination process S2 determines manufacturing conditions based on evaluation of the prototype 6 containing the phosphor sheet 2 of C stage. And manufacturing process S3 manufactures LED device 1 based on the manufacturing conditions determined at the determination process.

  Then, the phosphor sheet 2 of the prototype 6 to be evaluated is the C stage. Therefore, in the manufacturing conditions, the phosphor sheet 2 takes into account the variation in optical characteristics due to the above-described C-stage. Specifically, in the manufacturing conditions, a change in the optical characteristics of the phosphor sheet 2 due to deformation such as warpage accompanying curing shrinkage is pre-woven due to staging.

  As a result, in the manufacturing step S3, the LED device 1 having excellent light emission reliability can be manufactured.

  And since the LED device 1 is manufactured based on the manufacturing conditions determined based on evaluation of the prototype 6, the LED device 1 can be mass-produced (that is, mass-produced) with excellent accuracy. Therefore, the manufacturing efficiency of the LED device 1 can be sufficiently improved.

  The trial production process S1 and the determination process S2 are performed before the production process S3 for mass production of the LED devices 1 of different types. Further, when the lot of the phosphor and / or the LED 3 is changed in the trial production step S1 and the determination step S2, specifically, the average value of the maximum length of the phosphor, the absorption peak, for each change. This is performed every time the wavelength or the emission peak wavelength of the LED 3 is changed.

(Modification)
In the embodiment shown in FIG. 8, in the C-stage forming step S7, the LED 3 is first covered with a B-stage phosphor sheet, and then the B-stage phosphor sheet 2 is made into a C-stage. However, for example, as shown in FIG. 6, the B-stage phosphor sheet 2 laminated on the release sheet 4 can be made into a C-stage as it is.

  In that case, in the evaluation step S8, the amount of warpage accompanying the curing shrinkage of the C-stage phosphor sheet 2 is measured. The amount of warpage is obtained as the difference between the amount of depression in which the central portion of the phosphor sheet 2 is recessed downward and the amount of protrusion in which the peripheral end portion protrudes upward.

  Preferably, as in the embodiment shown in FIG. 8, in the C-stage forming step S <b> 7, first, the LED 3 is covered with the B-stage phosphor sheet 2, and then the B-stage phosphor sheet 2 is C-staged. .

  According to such a method, the prototype 6 in which the LED 3 is covered with the phosphor sheet 2 and the LED device 1 as an actual product can have the same configuration.

  Therefore, the manufacturing conditions of the actual product (LED device 1) can be determined based on the evaluation of the prototype 6 having the same configuration as the actual product (LED device 1).

  As a result, the manufacturing conditions can be determined with higher accuracy, and the LED device 1 that is more excellent in light emission reliability can be manufactured.

  In the embodiment of FIG. 2, the trial production condition determination step S4 determines the trial production conditions based on the past trial production conditions and evaluation information. For example, as shown in FIG. In addition, the manufacturing conditions can be predicted and determined in the determination step S2 shown in FIG. 1 based on the trial production conditions and the evaluations recorded in the recording step S9 without being based on the evaluation information.

  Preferably, in the trial condition determination step S4, the trial condition is determined based on past trial conditions and evaluation information.

  According to such a method, it is possible to accumulate trial production conditions that have been prototyped before this time, and it is possible to improve the accuracy of manufacturing conditions based on the accumulated trial production conditions and evaluation. Therefore, the LED device 1 having excellent light emission reliability can be obtained.

  In the embodiment of FIGS. 7 and 8, in the C-stage forming step S7 (see FIG. 2), first, the LED 3 is covered with the B-stage phosphor sheet 2, and then the B-stage phosphor sheet 2 is coated. Although the C stage is used, for example, the coating of the B-stage phosphor sheet 2 on the LED 3 and the C stage can be performed simultaneously.

  Further, in FIG. 8, a plurality of LEDs 3 are provided in one LED device 1. However, although not illustrated, for example, a single LED 3 may be provided.

  In the embodiment of FIG. 8, the LED 3 and the LED device 1 are described as examples as the optical semiconductor element and the optical semiconductor device in the present invention, respectively. For example, an LD (laser diode) 3 and a laser diode, respectively. The device 1 can also be used.

  The numerical values in the following examples and comparative examples can be substituted for the corresponding numerical values (that is, the upper limit value or the lower limit value) described in the above embodiment.

Example 1
[Prototype production process S1]
<Varnish preparation step S5>
First, silanol group-terminated polydimethylsiloxane heated to 40 ° C. [compound represented by the following formula (I) where all R ¹ are methyl groups, n = 155, average molecular weight 11,500] 2031 g (0.177 mol) ) As an ethylenically unsaturated hydrocarbon group-containing silicon compound, 15.76 g of vinyltrimethoxysilane [a compound in which R ² in the following formula (II) is a vinyl group and X ¹ is all a methoxy group] (0.106 mol) and, as an ethylenically unsaturated hydrocarbon group-containing silicon compound, (3-glycidoxypropyl) trimethoxysilane [R ³ in the following formula (III) is a 3-glycidoxypropyl group, compound X ² is represented by all methoxy] 2.80g (0.0118mol) [Mo of SiOH groups of the silanol groups at both ends of polydimethylsiloxane The number and, SiX ¹ groups and the ratio of the total number of moles of SiX ² groups of ethylenically unsaturated hydrocarbon group-containing silicon compound ^{[SiOH / (SiX 1 + SiX} 2) ethylenically unsaturated hydrocarbon group-containing silicon compound = 1 / 1] after stirring and mixing, 0.97 mL of tetramethylammonium hydroxide methanol solution (concentration 10% by mass) as a condensation catalyst (catalyst amount: 0.88 mol, based on 100 mol of silanol group-terminated polydimethylsiloxane) 0.50 mol, 4.0 mg based on 100 g of the condensation raw material) was added, and the mixture was stirred at 40 ° C. for 1 hour. The obtained oil was depressurized (10 mmHg) while stirring at 40 ° C. for 1 hour to remove volatile components. Next, after returning the reaction solution to atmospheric pressure, the organohydrogenpolysiloxane (dimethylpolysiloxane-co-methylhydrogenpolysiloxane) has a molar ratio of alkenyl group to hydrosilyl group of SiR ² / SiH = 1/3. 0.04 and stirred at 40 ° C. for 1 hour. Thereafter, 0.038 mL of platinum-carbonyl complex (platinum concentration 2.0 mass%) as a hydrosilylation catalyst (platinum content is 0.375 ppm with respect to the organopolysiloxane, that is, 0.375 × 10 5 with respect to 100 g of the condensation raw material. ^-4 g) was added and stirred at 40 ° C. for 10 minutes to prepare an A-stage silicone resin composition (second condensation reaction / addition reaction-curable silicone resin). The viscosity of the A-stage silicone resin composition at 25 ° C. and 1 atm was 8000 mPa · s.

  100 parts by mass of the silicone resin composition, 20 parts by mass of silicone rubber particles (spherical shape, average particle diameter of 7 μm), and 10 parts by mass of YAG particles (spherical shape, average particle diameter of 7 μm) as a yellow phosphor were mixed with an agitator. They were put into a mixing vessel equipped and mixed using a stirrer. Thus, an A stage varnish was prepared. The viscosity of the varnish at 25 ° C. and 1 atm was 20000 mPa · s.

<B-stage process S6>
Next, the varnish is applied to the surface of the release sheet made of PET in a rectangular shape (size: 10 mm × 100 mm) in a plan view with a dispenser (see FIG. 5), and then heated in an oven at 135 ° C. for 15 minutes. Thus, a B-stage sealing sheet having a thickness of 600 μm, which was laminated on the release sheet, was produced.

  It was 0.040 MPa when the compression elastic modulus in 25 degreeC of the sealing sheet of B stage immediately after manufacture was measured (refer Table 1). Specifically, the compression elastic modulus at 25 ° C. was calculated with a precision load measuring machine manufactured by Aiko Engineering.

<C-stage process S7>
A substrate on which an LED having a rectangular shape with a thickness of 150 μm was mounted was prepared (see FIG. 7). The shape, number and dimensions of the LED and substrate are described below.

Substrate shape: Square shape in plan view Dimensions of substrate: 8 mm on the side, maximum length 11 mm
LED shape: square shape in plan view LED dimensions: 0.3 mm on side, maximum length 0.4 mm
Number of LEDs mounted: 9
LED density: Number of LEDs mounted per unit area (mm ² ) of substrate 0.14 / mm ²
: Number of LEDs mounted per board 9
LED emission peak wavelength: 452 nm
Then, the board | substrate with which LED was mounted was installed in the press machine (refer FIG. 7).

  Separately, a B-stage sealing sheet was placed in a press machine on which the substrate was installed (see FIG. 7).

  Subsequently, the LED was sealed with a sealing sheet (see FIG. 8).

  Specifically, the sealing sheet was pushed down at room temperature with a flat plate press, and the LED was embedded with the sealing sheet at a pressure of 0.2 MPa. Thus, the LED was sealed with the sealing sheet.

  Then, the flat sheet which pressed the sealing sheet and the board | substrate was thrown into oven, the sealing sheet was heated for 30 minutes at 150 degreeC, and the sealing sheet was C-staged.

  Thereafter, the release sheet was peeled from the sealing sheet (see the arrow in FIG. 8).

  This made a prototype.

  The number of prototypes was one.

<Evaluation process S8>
A. Color temperature The prototype phosphor sheet was then evaluated.

  Specifically, a lighting test was performed in which a current of 100 mA was passed through the prototype substrate, and the color temperature of light immediately after the current was passed was measured by an instantaneous multi-photometry system (MCPD-9800, manufactured by Otsuka Electronics Co., Ltd.).

  The results are shown in Table 1.

B. Warpage amount The amount of warpage of the phosphor sheet of the prototype was also measured.

  The results are shown in Table 1.

[Decision step S2]
Since it was found that the measured value of the color temperature of light of the prototype almost reached the target range of 5450K, the blending ratio of the phosphor was 10 parts by mass with respect to 100 parts by mass of the silicone resin composition. The production conditions were determined as they were.

[Manufacturing process S3]
In the production process S3, the varnish preparation process S5 and the B-stage forming process S6 in the trial production process S1 under the production conditions determined in the decision process S2 (the phosphor blending ratio is 10 parts by mass with respect to 100 parts by mass of the silicone resin composition). And it implemented like each of C-staging process S7. Thus, an LED device was manufactured.

  The number of LED devices was 1000.

[Product Evaluation]
When the color temperature of the manufactured LED device was measured, the color temperature was the target 5450K, and the variation was within the target range 5425-5475K.

Comparative Example 1
<Evaluation step S8> was performed in the same manner as in Example 1 except that it was performed on the B-stage phosphor sheet before <C-staging step S7> after <B-staging step S6>. did.

    Whether the color temperature of the LED device to be manufactured reaches the target value as shown in Table 1 for the results of “A. Color temperature” and “B. Warpage amount” of the phosphor sheet of the B stage in <Evaluation Step S8> I couldn't judge.

(Discussion)
The difference in color temperature (Tc) between Example 1 and Comparative Example 1 was about 18K, which was found to be caused by a large amount of warpage due to curing shrinkage accompanying C-stage formation.

  Therefore, the manufacturing conditions determined in the determination process of Example 1 take into account the variation in color temperature due to the large amount of warpage, whereby the color temperature of the LED device as a product is the target. It was in the range.

  On the other hand, the manufacturing conditions determined in the determination process of Comparative Example 1 do not consider the variation in color temperature due to the large amount of warpage, and therefore the color temperature of the LED device as a product is a target range. Was outside.

1 LED device (laser diode device)
2 Phosphor sheet 3 LED (laser diode)
6 Prototype 7 Varnish S1 Prototype Process S2 Determination Process S3 Manufacturing Process S4 Prototype Condition Determination Process

Claims (3)

An optical semiconductor device manufacturing method for covering an optical semiconductor element with a phosphor sheet,
Prototyping process for prototyping and evaluating prototypes,
A determination step for determining manufacturing conditions for manufacturing the optical semiconductor device based on the evaluation of the prototype; and
A manufacturing process for manufacturing the optical semiconductor device, wherein the optical semiconductor element is covered with the phosphor sheet of a B stage based on the manufacturing conditions determined in the determining process, and the phosphor sheet is converted into a C stage. Prepared,
The prototype process includes
A varnish preparation step of preparing a varnish containing a phosphor and a curable resin,
A B-stage process for forming the B-stage phosphor sheet from the varnish;
A C-stage process for converting the phosphor sheet of the B stage into a C-stage; and
An optical semiconductor device manufacturing method comprising an evaluation step of evaluating the phosphor sheet of the C stage. In the C-stage process, the phosphor semiconductor sheet covers the optical semiconductor element,
2. The method of manufacturing an optical semiconductor device according to claim 1, wherein, in the evaluation step, the optical semiconductor device in which the optical semiconductor element is covered with the phosphor sheet is evaluated. The prototype process includes
2. The method of claim 1, further comprising a prototype condition determination step for determining a prototype condition for prototyping the prototype product based on information about a prototype condition and evaluation of the prototype product prototyped before this time. Or the manufacturing method of the optical semiconductor device of 2.