JP2013004632A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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JP2013004632A
JP2013004632A JP2011132688A JP2011132688A JP2013004632A JP 2013004632 A JP2013004632 A JP 2013004632A JP 2011132688 A JP2011132688 A JP 2011132688A JP 2011132688 A JP2011132688 A JP 2011132688A JP 2013004632 A JP2013004632 A JP 2013004632A
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substrate
semiconductor layer
adhesive
double
sided
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JP5770542B2 (en
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Tasuke Iwashita
太輔 岩下
Naoki Tatebayashi
直樹 舘林
Yoshihisa Negishi
佳久 根岸
Yukio Kato
幸雄 加藤
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Canon Components Inc
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Canon Components Inc
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Abstract

PROBLEM TO BE SOLVED: To provide a method for efficiently mounting a plurality of semiconductors on a substrate without damaging the semiconductors.SOLUTION: A method for manufacturing a semiconductor device by transferring a semiconductor layer formed on a first substrate via a sacrificial layer to a second substrate includes the steps of: bonding a second adhesive surface of a double-sided adhesive material in which a substrate for transfer is bonded to a first adhesive surface onto the semiconductor layer; separating the semiconductor layer bonded to the double-sided adhesive material from the first substrate by removing the sacrificial layer by performing etching and bonding the separated semiconductor layer to the second substrate via an adhesive agent; and separating the substrate for transfer from the double-sided adhesive material and then peeling the double-sided adhesive material from the semiconductor layer. An adhesive power on the first adhesive surface is smaller than an adhesive power on the second adhesive surface.

Description

本発明は、半導体装置を製造する方法に関する。特に、第１基板上に形成した半導体層の第２基板への転写による半導体装置の製造方法に関する。   The present invention relates to a method for manufacturing a semiconductor device. In particular, the present invention relates to a method for manufacturing a semiconductor device by transferring a semiconductor layer formed on a first substrate to a second substrate.

半導体装置を効率的に製造する方法として、例えば、特許文献１記載が提案されている。   For example, Patent Document 1 has been proposed as a method for efficiently manufacturing a semiconductor device.

特開２００５−５１１１７号公報JP-A-2005-51117

特許文献１では、一つの実施形態として、第１基板上の半導体薄膜片を個別にピックアップして、第２基板に移設する方法が開示されている。   In Patent Document 1, as one embodiment, a method of individually picking up semiconductor thin film pieces on a first substrate and transferring them to a second substrate is disclosed.

しかし、この方法では、移設する半導体薄膜片が複数になると、ピックアップの回数が多くなるため時間がかかり、複数の半導体薄膜片を実装する基板の生産には向かない。また、ピックアップするための治具を増やす等の対策をした場合、一度に複数の半導体薄膜片を移設できるが、アライメント等の治具のメンテナンスが必要である。さらに、半導体薄膜片の配列パターンを変更した場合、それに応じて治具のアライメントが必要であり、少量多品種の生産には向かない。   However, in this method, when there are a plurality of semiconductor thin film pieces to be transferred, the number of pick-ups increases, so it takes time, and is not suitable for production of a substrate on which a plurality of semiconductor thin film pieces are mounted. Further, when measures such as increasing the number of jigs for picking up are taken, a plurality of semiconductor thin film pieces can be transferred at once, but maintenance of the jigs such as alignment is necessary. Furthermore, when the arrangement pattern of the semiconductor thin film pieces is changed, jig alignment is required accordingly, which is not suitable for the production of a small variety of products.

また、特許文献１のもう一つの実施形態として、複数の個別支持体を連結する連結支持体を個別支持体の上面に接合させて、半導体薄膜片を一括して移設する方法が開示されている。   In addition, as another embodiment of Patent Document 1, a method is disclosed in which a connecting support for connecting a plurality of individual supports is joined to the upper surface of the individual support, and semiconductor thin film pieces are moved together. .

この実施形態においては、個別支持体と連結支持体は、半導体薄膜片を第１の基板から確実に剥離させるため（エッチングによる剥離である場合、エッチング液中で半導体薄膜片を保持するため）に十分な強度で結合されていなくてはならない。そのため、連結支持体の剛性が高ければ、第２基板への移設後に個別支持体と連結支持体を分離するとき、第２基板と半導体薄膜片の間で一度に大きな力が働き、半導体薄膜片が第２基板から剥離したり、半導体薄膜片あるいは第２基板が破損することがある。また、連結支持体が柔軟なものであれば、半導体薄膜片を第２基板に接合させる際のアライメントが困難になる。   In this embodiment, the individual support body and the connection support body ensure that the semiconductor thin film piece is peeled off from the first substrate (in order to hold the semiconductor thin film piece in the etching solution in the case of peeling by etching). Must be bonded with sufficient strength. Therefore, if the rigidity of the connection support is high, a large force acts between the second substrate and the semiconductor thin film piece at a time when the individual support and the connection support are separated after the transfer to the second substrate, and the semiconductor thin film piece May peel from the second substrate, or the semiconductor thin film piece or the second substrate may be damaged. Moreover, if a connection support body is flexible, the alignment at the time of joining a semiconductor thin film piece to a 2nd board | substrate will become difficult.

そこで、本発明は、複数の半導体を破損することなく効率的に基板上に実装することを目的とする。   Accordingly, an object of the present invention is to efficiently mount a plurality of semiconductors on a substrate without damaging them.

上記目的を達成するため、本発明によれば、第１基板の上に犠牲層を介して形成された半導体層を第２基板に移設して半導体装置を製造する方法であって、第１の粘着面に移設用基板が接合された両面粘着材の第２の粘着面を前記半導体層の上に接合する工程と、エッチングを行って前記犠牲層を除去することにより、前記第１基板から前記両面粘着材に接合された前記半導体層を分離し、前記分離された前記半導体層を第２基板に接着剤を介して接合する工程と、前記両面粘着材から前記移設用基板を分離し、その後、前記半導体層から前記両面粘着材を剥離する工程とを含み、前記第１の粘着面における粘着力は、前記第２の粘着面における粘着力よりも小さいことを特徴とする方法が提供される。   To achieve the above object, according to the present invention, there is provided a method of manufacturing a semiconductor device by transferring a semiconductor layer formed on a first substrate via a sacrificial layer to a second substrate, Bonding the second adhesive surface of the double-sided adhesive material having the transfer substrate bonded to the adhesive surface on the semiconductor layer, and removing the sacrificial layer by etching to remove the sacrificial layer from the first substrate; Separating the semiconductor layer bonded to the double-sided pressure-sensitive adhesive material, bonding the separated semiconductor layer to a second substrate via an adhesive, and separating the transfer substrate from the double-sided pressure-sensitive adhesive material; And a step of peeling the double-sided adhesive material from the semiconductor layer, wherein the adhesive force on the first adhesive surface is smaller than the adhesive force on the second adhesive surface. .

本発明によれば、複数の半導体を破損することなく効率的に基板上に実装する方法が提供される。   The present invention provides a method for efficiently mounting a plurality of semiconductors on a substrate without damaging them.

本発明の一実施形態の第１工程を示す図。The figure which shows the 1st process of one Embodiment of this invention. 本発明の一実施形態の第２工程を示す図。The figure which shows the 2nd process of one Embodiment of this invention. 本発明の一実施形態の第３工程を示す図。The figure which shows the 3rd process of one Embodiment of this invention. 本発明の一実施形態の第４工程を示す図。The figure which shows the 4th process of one Embodiment of this invention. 本発明の一実施形態の第５工程を示す図。The figure which shows the 5th process of one Embodiment of this invention. 本発明の一実施形態の第６工程を示す図。The figure which shows the 6th process of one Embodiment of this invention. 本発明の一実施形態の第７工程を示す図。The figure which shows the 7th process of one Embodiment of this invention. 本発明の一実施形態の第８工程を示す図。The figure which shows the 8th process of one Embodiment of this invention.

以下、第１基板１の上に犠牲層２を介して形成された半導体層３を第２基板８に移設して半導体装置を製造するための、本発明を適用できる好適な実施例について、添付図面を参照して、さらに具体的かつ詳細に説明する。なお、既に説明した部分には同一符号を付し重複説明を省略する。   Hereinafter, a preferred embodiment to which the present invention can be applied for manufacturing a semiconductor device by transferring a semiconductor layer 3 formed on a first substrate 1 via a sacrificial layer 2 to a second substrate 8 will be described. More specific and detailed description will be given with reference to the drawings. In addition, the same code | symbol is attached | subjected to the already demonstrated part and duplication description is abbreviate | omitted.

＜第１工程＞
第１工程では、図１に示すように、第１基板１上に犠牲層２を介して半導体層３を形成する。まず、ＧａＡｓにより形成された６インチの第１基板１上にＡｌＡｓからなる犠牲層２をエピタキシャル成長により形成する。ここで、第１基板１はＧａＡｓに限らずサファイヤ、Ｓｉ等により形成されていてもよく、大きさも６インチには限られない。また、犠牲層２はＡｌＡｓに限らず、ＩｎＧａＰ等の、フッ酸、希フッ酸又は塩酸等によるウェットエッチングあるいはドライエッチングを行うことにより除去することができる膜を材料として用いることができる。 <First step>
In the first step, as shown in FIG. 1, a semiconductor layer 3 is formed on the first substrate 1 with a sacrificial layer 2 interposed therebetween. First, a sacrificial layer 2 made of AlAs is formed by epitaxial growth on a 6-inch first substrate 1 made of GaAs. Here, the first substrate 1 is not limited to GaAs, and may be formed of sapphire, Si, or the like, and the size is not limited to 6 inches. The sacrificial layer 2 is not limited to AlAs, and a film that can be removed by wet etching or dry etching with hydrofluoric acid, dilute hydrofluoric acid, hydrochloric acid, or the like, such as InGaP, can be used as a material.

次に、犠牲層２の上にＬＥＤ発光層を含む半導体層３を、エピタキシャル成長により積層する。なお、半導体層３は、ＡｌＧａＡｓ、ＧａＡｓ、さらにはＬＥＤ特性、圧電特性、誘電特性、磁性特性等など機械的、電気的、磁気的、光学的な機能などを発揮する半導体接合を有する領域あるいは素子であれば何れでもよい。   Next, the semiconductor layer 3 including the LED light emitting layer is laminated on the sacrificial layer 2 by epitaxial growth. The semiconductor layer 3 is a region or element having a semiconductor junction that exhibits AlGaAs, GaAs, and further mechanical, electrical, magnetic, and optical functions such as LED characteristics, piezoelectric characteristics, dielectric characteristics, and magnetic characteristics. Any may be used.

＜第２工程＞
第２工程では、図２に示すように、第１基板１上に形成された半導体層３の上面に後述の第３工程におけるエッチングマスクとしてレジスト４を形成する。ここで、塗布したレジスト４の表面が平坦であれば、後の工程において、レジスト４と両面粘着材６との密着性が向上する。 <Second step>
In the second step, as shown in FIG. 2, a resist 4 is formed on the upper surface of the semiconductor layer 3 formed on the first substrate 1 as an etching mask in a third step described later. Here, if the surface of the applied resist 4 is flat, the adhesion between the resist 4 and the double-sided pressure-sensitive adhesive material 6 is improved in a later step.

本実施形態では、スピンコーティング法、スプレーコーティング法等の方法で感光性のレジスト４を塗布した後、レジスト４を露光し、現像することでパターニングをする。この場合、レジスト４は感光性を有するものであり、本実施形態では、東京応化工業（株）社製ＰＭＥＲ Ｐ−ＬＡ９００ＰＭを用いているが、これに限られない。   In this embodiment, after the photosensitive resist 4 is applied by a method such as spin coating or spray coating, the resist 4 is exposed and developed to perform patterning. In this case, the resist 4 has photosensitivity, and in this embodiment, PMER P-LA900PM manufactured by Tokyo Ohka Kogyo Co., Ltd. is used, but this is not limitative.

また、他の方法として、レジスト４を半導体層３上に印刷する等の方法があり、この場合、レジスト４は感光性を有さなくてよい。   As another method, there is a method of printing the resist 4 on the semiconductor layer 3, and in this case, the resist 4 may not have photosensitivity.

＜第３工程＞
第３工程では、レジスト４をマスクとして、エッチングにより、第１基板１の上に犠牲層２を介して形成された半導体層３を犠牲層２と共に複数に分割する。エッチング後の第１基板の状態の断面の概略図は図３に示しており、半導体層３の上面にレジスト４が形成された部分は半導体層３及び犠牲層２が残存しており、それ以外の部分は半導体層３を貫通する溝５が形成される。なお、溝５は図３のように第１基板１に達するものであれば、後述の犠牲層２をエッチングする工程（第６工程）でエッチング液が浸透しやすくなるが、必ずしもその必要はない。また、本実施形態では、ウェットエッチングを行っているが、材料の組み合わせによってはドライエッチングでもよい。 <Third step>
In the third step, the semiconductor layer 3 formed on the first substrate 1 via the sacrificial layer 2 is divided into a plurality together with the sacrificial layer 2 by etching using the resist 4 as a mask. A schematic cross-sectional view of the state of the first substrate after etching is shown in FIG. 3, where the semiconductor layer 3 and the sacrificial layer 2 remain in the portion where the resist 4 is formed on the upper surface of the semiconductor layer 3. In this portion, a groove 5 penetrating the semiconductor layer 3 is formed. As long as the groove 5 reaches the first substrate 1 as shown in FIG. 3, the etching solution easily penetrates in the step of etching the sacrificial layer 2 described later (sixth step), but this is not always necessary. . In this embodiment, wet etching is performed, but dry etching may be performed depending on the combination of materials.

本工程により、本実施形態では、溝５が形成された後の半導体層３の形状はオリフラに垂直な方向で８ｍｍ、オリフラに平行な方向で６０μｍの島状であり２８０μｍピッチで第１基板１のオリフラに平行に配列され、３７個で１ユニットを形成する。各ユニット間にはオリフラに垂直方向で１５９２．５μｍ、平行方向で２７４０μｍの隙間があり、この隙間には半導体機能膜は配置されていない。   According to this process, in this embodiment, the shape of the semiconductor layer 3 after the groove 5 is formed is an island shape of 8 mm in the direction perpendicular to the orientation flat and 60 μm in the direction parallel to the orientation flat, and the first substrate 1 at a pitch of 280 μm. 37 units are arranged in parallel to one orientation flat and form one unit. Between each unit, there is a gap of 1592.5 μm in the vertical direction and 2740 μm in the parallel direction with respect to the orientation flat, and no semiconductor functional film is disposed in this gap.

次に、第６工程において犠牲層２のエッチング液を浸入しやすくするため、必要に応じて第１基板１上の構成物表面の濡れ性を改善する。本実施形態では、ヤマト科学社製プラズマリアクターＰＲ−５００を使用し、条件は酸素流量５０ｍｌ／ｍｉｎ、出力２００Ｗ、チャンバー内圧力９０Ｐａ、処理時間１２０秒である。   Next, in order to make it easier for the etching solution of the sacrificial layer 2 to enter in the sixth step, the wettability of the surface of the component on the first substrate 1 is improved as necessary. In this embodiment, a plasma reactor PR-500 manufactured by Yamato Scientific Co. is used, and the conditions are an oxygen flow rate of 50 ml / min, an output of 200 W, a chamber pressure of 90 Pa, and a processing time of 120 seconds.

＜第４工程＞
第４工程では、図４に示すように、移設用基板７を両面粘着材６の第１の粘着面６１に接合する。本実施形態では、両面粘着材６はパナック社製の片面微粘着フィルムＰＸ５０（第１の粘着面６１を形成）と片面粘着材ＨＵＣＢ１００Ａ（第２の粘着面６２を形成）を背中合わせに貼り合わせることにより両面粘着材６としている。移設用基板７には６インチのガラス基板を用いる。 <4th process>
In the fourth step, as shown in FIG. 4, the transfer substrate 7 is joined to the first adhesive surface 61 of the double-sided adhesive material 6. In this embodiment, the double-sided pressure-sensitive adhesive material 6 is obtained by bonding a single-sided slightly-adhesive film PX50 (forming the first pressure-sensitive adhesive surface 61) and a single-sided pressure-sensitive adhesive material HUCB100A (forming the second pressure-sensitive adhesive surface 62) back to back. Thus, the double-sided adhesive material 6 is obtained. A 6-inch glass substrate is used as the transfer substrate 7.

ここで、第６工程において移設用基板７がエッチングされてしまうようなエッチング液に浸漬する場合、移設用基板７を保護するため、両面粘着材６が接合されていない面に保護フィルムを貼り付けるか又は樹脂などを塗布する。本実施形態では、保護フィルムとして、第１の粘着面６１を形成したものと同じパナック社製の片面微粘着フィルムＰＸ５０を用いた。また、第６工程において犠牲層２のエッチング液を浸入しやすくするため、必要に応じて、第２の粘着面６２の濡れ性を改善する。例えば、短時間のアッシング処理などを行う。本実施形態では、ヤマト科学社製プラズマリアクターＰＲ−５００を使用し表面を濡れやすくした。条件は酸素流量５０ｍｌ／ｍｉｎ、出力２００Ｗ、チャンバー内圧力９０Ｐａ、処理時間１２０秒である。   Here, in the case where the transfer substrate 7 is immersed in an etching solution that will be etched in the sixth step, a protective film is applied to the surface to which the double-sided adhesive 6 is not bonded in order to protect the transfer substrate 7. Or a resin or the like is applied. In the present embodiment, the same single-sided slightly adhesive film PX50 manufactured by Panac Co., Ltd. as that having the first adhesive surface 61 is used as the protective film. Further, the wettability of the second adhesive surface 62 is improved as necessary in order to make it easier for the etching solution of the sacrificial layer 2 to enter in the sixth step. For example, a short ashing process is performed. In this embodiment, a plasma reactor PR-500 manufactured by Yamato Scientific Co., Ltd. was used to make the surface easy to wet. The conditions are an oxygen flow rate of 50 ml / min, an output of 200 W, a pressure in the chamber of 90 Pa, and a processing time of 120 seconds.

なお、両面粘着材６は本実施形態のものに限らず、第２の粘着面６２を半導体層３の上に接合させたとき、第１の粘着面６１における粘着力は、第２の粘着面６２における粘着力よりも小さければよい。具体的には、常温において、第１の粘着面６１における粘着力は０．３７５Ｎ／１０ｍｍ以下（本実施形態では０．０１Ｎ／１０ｍｍ）で、かつ第２の粘着面６２における粘着力は０．６Ｎ／１０ｍｍ以上（本実施形態では６Ｎ／１０ｍｍ）であることが望ましい。さらに両面粘着材６は、後述の半導体層３から剥離する工程において、柔軟なものであることが望ましい。一方、移設用基板７の大きさは６インチに限らないが、生産性を考慮した場合、第１基板１と同等以上の大きさであることが望ましい。移設用基板７の材質は耐エッチング性があるものが良く、後の工程におけるアライメントの作業性を考慮すると、剛性の高いものが望ましい。さらに、移設用基板７及び両面粘着材６は、可視光を透過する材料から形成されるものであれば、直接、基板上の半導体層３の位置を目視できるため、アライメントの作業性がいっそう容易になる。なお、粘着力の表示方法はＪＩＳ Ｚ ０２３７に準拠するものとする。   The double-sided adhesive material 6 is not limited to that of the present embodiment, and when the second adhesive surface 62 is bonded onto the semiconductor layer 3, the adhesive force on the first adhesive surface 61 is the second adhesive surface. What is necessary is just to be smaller than the adhesive force in 62. Specifically, at normal temperature, the adhesive force on the first adhesive surface 61 is 0.375 N / 10 mm or less (0.01 N / 10 mm in this embodiment), and the adhesive force on the second adhesive surface 62 is 0.00. It is desirable that it is 6N / 10 mm or more (6N / 10 mm in this embodiment). Furthermore, it is desirable that the double-sided pressure-sensitive adhesive material 6 be flexible in the process of peeling from the semiconductor layer 3 described later. On the other hand, the size of the transfer substrate 7 is not limited to 6 inches, but is preferably equal to or larger than that of the first substrate 1 in consideration of productivity. The transfer substrate 7 is preferably made of a material having etching resistance, and considering the workability of alignment in a later process, a material having high rigidity is desirable. Further, if the transfer substrate 7 and the double-sided adhesive material 6 are made of a material that transmits visible light, the position of the semiconductor layer 3 on the substrate can be directly observed, so that the alignment workability is even easier. become. In addition, the display method of adhesive strength shall comply with JIS Z 0237.

ここで、本工程を第４工程としたが、必ずしも第３工程の後に行う必要はなく、次の第５工程までに移設用基板７を接合した両面粘着材６を準備できればよい。   Here, although this process was made into the 4th process, it does not necessarily need to carry out after the 3rd process, and should just prepare double-sided adhesive material 6 which joined substrate 7 for transfer by the following 5th process.

＜第５工程＞
第５工程では、図５に示すように、第１の粘着面６１に移設用基板７が接合された両面粘着材６の第２の粘着面６２を半導体層３の上に接合する。本実施形態においては、半導体層３の上面にレジスト４が形成されていることから、第２の粘着面６２をレジスト４に接合することになる。その際、貼り合わせる圧力は全面に均一にすることが望ましい。また、圧力が強すぎては、第２の粘着面６２の粘着剤が溝５に入り込み、犠牲層２のエッチング液の浸入スペースを塞いでしまう。逆に、圧力が弱すぎては第２の粘着面６２における粘着力が不十分となり、接合した基板が自然剥離するなどして、半導体層３が移設されない恐れがある。なお、本実施形態では、９ｇ／ｃｍ２の圧力で２分間加圧接合した。 <5th process>
In the fifth step, as shown in FIG. 5, the second adhesive surface 62 of the double-sided adhesive material 6 in which the transfer substrate 7 is bonded to the first adhesive surface 61 is bonded onto the semiconductor layer 3. In the present embodiment, since the resist 4 is formed on the upper surface of the semiconductor layer 3, the second adhesive surface 62 is bonded to the resist 4. At that time, it is desirable that the pressure to be bonded is uniform over the entire surface. On the other hand, if the pressure is too strong, the adhesive on the second adhesive surface 62 enters the groove 5 and closes the space for the etching solution to enter the sacrificial layer 2. On the other hand, if the pressure is too weak, the adhesive force on the second adhesive surface 62 becomes insufficient, and the bonded substrate may be peeled off naturally, and the semiconductor layer 3 may not be transferred. In this embodiment, pressure bonding is performed for 2 minutes at a pressure of 9 g / cm 2 .

＜第６工程＞
第６工程では、エッチングを行って犠牲層２を除去することにより、第１基板１から両面粘着材６に接合された半導体層３を分離し、分離された半導体層３を第２基板８に接着剤９を介して接合する。本工程について、以下に説明する。 <6th process>
In the sixth step, the sacrificial layer 2 is removed by etching to separate the semiconductor layer 3 bonded to the double-sided adhesive material 6 from the first substrate 1, and the separated semiconductor layer 3 is formed into the second substrate 8. Bonding is performed via an adhesive 9. This step will be described below.

まず、エッチング液の調整をする。本実施形態では、５０ｗｔ％の市販のＨＦ水溶液を希釈し１０ｗｔ％ＨＦ水溶液とした。さらに、基板表面に対する濡れ性（または接触角）を改善するため界面活性剤を添加した。界面活性剤は横浜油脂工業（株）社製セミクリーン（登録商標）Ｍ２を使用し、濃度は５ｗｔ％とした。   First, the etching solution is adjusted. In this embodiment, a 50 wt% commercially available HF aqueous solution is diluted to obtain a 10 wt% HF aqueous solution. Furthermore, a surfactant was added to improve the wettability (or contact angle) to the substrate surface. As the surfactant, semi-clean (registered trademark) M2 manufactured by Yokohama Oil & Fat Co., Ltd. was used, and the concentration was 5 wt%.

次に、第５工程で接合した半導体層３を含む接合基板にエッチング液を浸透させ、犠牲層２を除去する。このとき、エッチング液の浸入性を良好にし、途中で気泡を含まないようにするために、半導体層３の長手方向がエッチング液水面に対し直角になるよう接合基板を浸漬する。その後、犠牲層２がエッチングにより除去されるまで、しばらく静置する。犠牲層２が除去されると、図６（ａ）に示すような状態になり、その後、接合基板を引き上げ水洗しつつ、第１基板１を半導体層３から分離する。基板どうしを分離するとき、第２の粘着面６２における粘着力が弱ければ、半導体層３が両面粘着材６から剥離する、あるいは、ずれる。   Next, an etching solution is permeated into the bonding substrate including the semiconductor layer 3 bonded in the fifth step, and the sacrificial layer 2 is removed. At this time, the bonding substrate is immersed so that the longitudinal direction of the semiconductor layer 3 is perpendicular to the water surface of the etching solution in order to improve the penetration of the etching solution and prevent bubbles from being included in the middle. Then, it is left still for a while until the sacrificial layer 2 is removed by etching. When the sacrificial layer 2 is removed, the state shown in FIG. 6A is obtained, and then the first substrate 1 is separated from the semiconductor layer 3 while pulling up and washing the bonding substrate. When the substrates are separated from each other, if the adhesive force on the second adhesive surface 62 is weak, the semiconductor layer 3 is peeled off or deviated from the double-sided adhesive material 6.

次に、図６（ｂ）に示すように半導体層３を第２基板８に接合する。本実施形態において、第２基板８は、Ｓｉ基板で、接着剤９が塗布されており、また、半導体装置を制御するための配線を有する。接着剤９を加熱して、半導体層３を第２基板８に加圧接合する。このとき、基板が熱により曲がることを防止するため、移設用基板７は、第２基板８と熱膨張係数が略同一であることが望ましい。なお、接合したときに十分な接着力が得られるならば接着剤９を加熱及び加圧しなくてもよい。   Next, as shown in FIG. 6B, the semiconductor layer 3 is bonded to the second substrate 8. In the present embodiment, the second substrate 8 is a Si substrate, coated with an adhesive 9, and has wiring for controlling the semiconductor device. The adhesive 9 is heated to pressure-bond the semiconductor layer 3 to the second substrate 8. At this time, in order to prevent the substrate from being bent by heat, it is desirable that the transfer substrate 7 has substantially the same thermal expansion coefficient as that of the second substrate 8. It should be noted that the adhesive 9 need not be heated and pressurized if a sufficient adhesive force can be obtained when bonded.

本実施形態では、接着剤９には東レ（株）社製ポリイミド前駆体溶液セミコファイン（登録商標）ＳＰ−８１１を用いている。   In this embodiment, a polyimide precursor solution Semicofine (registered trademark) SP-811 manufactured by Toray Industries, Inc. is used as the adhesive 9.

＜第７工程＞
第７工程では、両面粘着材６から移設用基板７を分離し、その後、半導体層３から両面粘着材６を徐々に剥離する。本工程について、以下に説明する。 <Seventh step>
In the seventh step, the transfer substrate 7 is separated from the double-sided adhesive material 6, and then the double-sided adhesive material 6 is gradually peeled from the semiconductor layer 3. This step will be described below.

第６工程で得られた基板を室温まで冷却後、図７（ａ）のように移設用基板７を両面粘着材６から剥離する。第１の粘着面６１における粘着力は極めて弱いため、第１の粘着面６１の全面で接合していたとしても剥離は可能である。   After the substrate obtained in the sixth step is cooled to room temperature, the transfer substrate 7 is peeled from the double-sided adhesive material 6 as shown in FIG. Since the adhesive force on the first adhesive surface 61 is extremely weak, even if it is bonded on the entire surface of the first adhesive surface 61, it can be peeled off.

次に、第２の粘着面６２を４０℃以上に加熱した状態で、半導体層３から両面粘着材６を徐々に剥離する。基板を加熱するのは、レジスト４及び第２の粘着面６２を軟化させるためで、本実施形態では７０℃である。   Next, the double-sided pressure-sensitive adhesive material 6 is gradually peeled from the semiconductor layer 3 in a state where the second pressure-sensitive adhesive surface 62 is heated to 40 ° C. or higher. The substrate is heated in order to soften the resist 4 and the second adhesive surface 62, and in this embodiment, the temperature is 70 ° C.

この状態で図７（ｂ）の簡略斜視図に示すように、剥離の途中において、両面粘着材６の剥離された部分と剥離されていない部分の境界Ｌが折れ目となり、両面粘着材６が鋭角に曲げられた状態で徐々に剥離する。本実施形態では、図７（ｃ）に示すように、両面粘着材６を引く力Ｆの方向は基板面に対して平行である。そのため、半導体層３を第２基板８から上方向に引き剥がそうとする力を最小限に抑えることができる。上記のように剥離すれば、半導体層３の上面には図７（ｂ）に示した直線状の境界Ｌのみにかかるため、容易に両面粘着材を剥離することができる。   In this state, as shown in the simplified perspective view of FIG. 7B, in the middle of peeling, the boundary L between the peeled portion and the unpeeled portion of the double-sided adhesive material 6 becomes a crease, and the double-sided adhesive material 6 It peels off gradually while bent at an acute angle. In the present embodiment, as shown in FIG. 7C, the direction of the force F that pulls the double-sided adhesive material 6 is parallel to the substrate surface. Therefore, the force for peeling the semiconductor layer 3 upward from the second substrate 8 can be minimized. If peeled as described above, the upper surface of the semiconductor layer 3 is applied only to the linear boundary L shown in FIG. 7B, so that the double-sided adhesive material can be easily peeled off.

＜第８工程＞
半導体層３から両面粘着材６を剥離した後、第８工程で、プロピレングリコールモノメチルエーテルアセテート（ＰＧＭＥＡ）を高圧スプレーする等の方法により、図８に示すように、半導体層３上部に残存するレジスト４を半導体層３から除去する。 <Eighth process>
After the double-sided adhesive 6 is peeled from the semiconductor layer 3, the resist remaining on the upper part of the semiconductor layer 3 as shown in FIG. 8 by a method such as high-pressure spraying of propylene glycol monomethyl ether acetate (PGMEA) in the eighth step. 4 is removed from the semiconductor layer 3.

＜その他の実施形態＞
以上、本発明の１つの実施形態について説明したが、これだけには限らない。例えば、半導体層３の分割は上記の第２工程及び第３工程の代わりに、第１工程の後ハーフダイシング等で半導体層３を分割することが可能である。この場合、第２の粘着面６２と半導体層３の間の粘着力が十分に得られる場合、半導体層３上にレジスト４を設ける必要はない。 <Other embodiments>
As mentioned above, although one embodiment of the present invention was described, it is not restricted to this. For example, the semiconductor layer 3 can be divided by half dicing after the first step instead of the second step and the third step. In this case, when the adhesive force between the second adhesive surface 62 and the semiconductor layer 3 is sufficiently obtained, it is not necessary to provide the resist 4 on the semiconductor layer 3.

＜上記の実施形態の効果＞
以上、上記の実施形態によれば、両面粘着材６は剛性の高い移設用基板７に接合されている。そのため、半導体層３の上に両面粘着材６を接合させる際（第５工程）、及び半導体層３を第２基板８に接合させる際（第６工程）、半導体層３に均等に圧力を加えること、及び第１基板１及び第２基板８へのアライメントが容易である。一方、半導体層３の第２基板８への移設後において、移設用基板７を両面粘着材６から小さな力で分離し、柔軟な両面粘着材６を折り曲げながら半導体層３から徐々に剥離することができる。そのため、この工程（第７工程）において半導体層３に係る応力を小さくすることができる。 <Effects of the above embodiment>
As mentioned above, according to said embodiment, the double-sided adhesive material 6 is joined to the board | substrate 7 for transfer with high rigidity. Therefore, when bonding the double-sided pressure-sensitive adhesive material 6 onto the semiconductor layer 3 (fifth step) and when bonding the semiconductor layer 3 to the second substrate 8 (sixth step), an equal pressure is applied to the semiconductor layer 3. And alignment to the first substrate 1 and the second substrate 8 is easy. On the other hand, after the transfer of the semiconductor layer 3 to the second substrate 8, the transfer substrate 7 is separated from the double-sided adhesive material 6 with a small force, and the flexible double-sided adhesive material 6 is gradually peeled off from the semiconductor layer 3 while being bent. Can do. Therefore, the stress relating to the semiconductor layer 3 can be reduced in this step (seventh step).

したがって、上記の実施形態によれば、複数の半導体層３を実装する第２基板８の製造に対応可能で、半導体層３あるいは第２基板８を破損させず、確実に第１基板１上に形成した半導体層３を第２基板８に転写する方法を提供できる。さらに、上記の実施形態の方法を用いることで、低コストで高性能なＬＥＤアレイ、ＬＥＤプリンタヘッド、ＬＥＤプリンタやディスプレイ等の表示装置等、あるいは、光送受信用素子や受光素子などの製造にも適用することができる。   Therefore, according to the above-described embodiment, it is possible to cope with the manufacture of the second substrate 8 on which the plurality of semiconductor layers 3 are mounted, and the semiconductor layer 3 or the second substrate 8 is not damaged, and the first substrate 1 is surely formed. A method of transferring the formed semiconductor layer 3 to the second substrate 8 can be provided. Furthermore, by using the method of the above-described embodiment, it is also possible to manufacture low-cost and high-performance LED arrays, LED printer heads, display devices such as LED printers and displays, or optical transmission / reception elements and light receiving elements. Can be applied.

１ 第１基板
２ 犠牲層
３ 半導体層
４ レジスト
５ 溝
６ 両面粘着材
７ 移設用基板
８ 第２基板
９ 接着剤 Reference Signs List 1 first substrate 2 sacrificial layer 3 semiconductor layer 4 resist 5 groove 6 double-sided adhesive 7 transfer substrate 8 second substrate 9 adhesive

Claims (7)

第１基板の上に犠牲層を介して形成された半導体層を第２基板に移設して半導体装置を製造する方法であって、
第１の粘着面に移設用基板が接合された両面粘着材の第２の粘着面を前記半導体層の上に接合する工程と、
エッチングを行って前記犠牲層を除去することにより、前記第１基板から前記両面粘着材に接合された前記半導体層を分離し、前記分離された前記半導体層を第２基板に接着剤を介して接合する工程と、
前記両面粘着材から前記移設用基板を分離し、その後、前記半導体層から前記両面粘着材を剥離する工程とを含み、
前記第１の粘着面における粘着力は、前記第２の粘着面における粘着力よりも小さい
ことを特徴とする方法。 A method of manufacturing a semiconductor device by transferring a semiconductor layer formed on a first substrate via a sacrificial layer to a second substrate,
Bonding the second adhesive surface of the double-sided adhesive material having the transfer substrate bonded to the first adhesive surface on the semiconductor layer;
The sacrificial layer is removed by etching to separate the semiconductor layer bonded to the double-sided pressure-sensitive adhesive material from the first substrate, and the separated semiconductor layer is bonded to the second substrate via an adhesive. Joining, and
Separating the transfer substrate from the double-sided adhesive material, and then peeling the double-sided adhesive material from the semiconductor layer,
The adhesive force on the first adhesive surface is smaller than the adhesive force on the second adhesive surface. 前記第１の粘着面における粘着力は０．３７５Ｎ／１０ｍｍ以下で、かつ前記第２の粘着面における粘着力は０．６Ｎ／１０ｍｍ以上であることを特徴とする請求項１に記載の方法。   The method according to claim 1, wherein the adhesive force on the first adhesive surface is 0.375 N / 10 mm or less, and the adhesive force on the second adhesive surface is 0.6 N / 10 mm or more. 前記第２の粘着面を４０℃以上に加熱した状態で、前記半導体層から前記両面粘着材を徐々に剥離することを特徴とする請求項１又は２に記載の方法。   The method according to claim 1, wherein the double-sided pressure-sensitive adhesive material is gradually peeled from the semiconductor layer in a state where the second pressure-sensitive adhesive surface is heated to 40 ° C. or more. 前記移設用基板の熱膨張係数と、前記第２基板の熱膨張係数は略同一であることを特徴とする請求項１乃至３の何れか１項に記載の方法。   The method according to claim 1, wherein a thermal expansion coefficient of the transfer substrate and a thermal expansion coefficient of the second substrate are substantially the same. 前記移設用基板及び前記両面粘着材は、可視光を透過する材料から形成されることを特徴とする請求項１乃至４の何れか１項に記載の方法。   The method according to any one of claims 1 to 4, wherein the transfer substrate and the double-sided pressure-sensitive adhesive material are formed of a material that transmits visible light. 前記第１基板上に形成された前記半導体層の上面にはレジストが形成されており、前記第２の粘着面を前記半導体層の上に接合する工程において、前記第２の粘着面を前記レジストに接合し、前記半導体層から前記両面粘着材を剥離した後、前記レジストを前記半導体層から除去する工程をさらに含むことを特徴とする請求項１乃至５の何れか１項に記載の方法。   A resist is formed on the upper surface of the semiconductor layer formed on the first substrate, and the second adhesive surface is bonded to the resist in the step of bonding the second adhesive surface onto the semiconductor layer. The method according to claim 1, further comprising a step of removing the resist from the semiconductor layer after bonding to the semiconductor layer and peeling the double-sided adhesive material from the semiconductor layer. 前記第１基板はＧａＡｓで形成され、前記第２基板は前記半導体層を機能させるための配線を有するＳｉ基板であり、前記半導体層はＡｌＧａＡｓ又はＧａＡｓで形成されることを特徴とする請求項１乃至６の何れか１項に記載の方法。   2. The first substrate is formed of GaAs, the second substrate is a Si substrate having wiring for functioning the semiconductor layer, and the semiconductor layer is formed of AlGaAs or GaAs. 7. The method according to any one of items 6 to 6.
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