JP2012023244A - Manufacturing method of semiconductor element and light emitting diode and power device having the semiconductor element manufactured by the method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent chips or cracks in substrates in the substrate grinding and polishing processes and facilitate dice cutting in the manufacturing process of a semiconductor element.SOLUTION: The manufacturing method of the semiconductor element includes an adhesion process in which a surface 10A of a substrate 10, having a semiconductor layer on the surface, is bonded to a polishing support member 50 with an adhesive 40 through a plate-like adhesion member 20A, a hardening process in which the adhesive 40 is hardened, and a polishing process in which a back surface 10B of the substrate 10, which is bonded to the polishing support member 50 through the adhesion member 20A, is polished to a predetermined thickness.

Description

  The present invention relates to a method for manufacturing a semiconductor element, and a light emitting diode and a power device having a semiconductor element manufactured by the manufacturing method, and more particularly to a method for manufacturing a semiconductor element including a polishing step.

  A manufacturing method of a semiconductor element used for a light emitting diode (LED) and a power device includes a step of dicing a substrate on which a semiconductor layer is formed on the surface side into a chip. In order to facilitate the dicing process, a process of thinning the substrate by grinding and polishing the back surface of the substrate is performed. The thinner the substrate is, the easier the dicing process is, but the strength of the substrate is reduced, and the substrate is likely to be damaged during the grinding and polishing processes.

  As a prior document disclosing a technique for solving the above-mentioned problem, there is Patent Document 1. In the wafer polishing method described in Patent Document 1, the boundary between the inner region of the wafer having the semiconductor layer formed on the surface side and the outer peripheral portion thereof is cut or polished perpendicularly to the surface of the wafer. The process of removing the outer periphery of the wafer, the process of bonding the wafer surface to a support member having a surface dimension equal to or larger than that of the wafer, and grinding and polishing the back surface of the wafer with the support member supporting the wafer surface And a step of thinning the wafer. By this method, when the wafer is thinned to about 100 μm, the wafer edge is prevented from being chipped or cracked.

Japanese Patent Laid-Open No. 2005-19435

  In recent years, in order to further facilitate the dicing process, the wafer is thinned to 80 μm or less by grinding and polishing. When grinding and polishing to such a thin thickness, the behavior of the double-sided tape used in the step of bonding the wafer surface and the support member as an elastic body cannot be ignored. Specifically, since the adhesive of the double-sided tape is elastically deformed by an impact from cutting water or a grindstone, the wafer flutters. The fluttering causes chipping or cracking at the wafer edge, which reduces the yield of semiconductor elements.

  A sapphire substrate is increasingly used as a substrate for semiconductor elements used in LEDs and power devices. Since the sapphire substrate is harder than the silicon substrate, the substrate is more likely to be chipped or cracked during the above grinding and polishing.

  The present invention has been made in view of the above-described problems, and in the process of manufacturing a semiconductor element, the substrate is prevented from being chipped or cracked during grinding and polishing processes, and can be easily diced. An object of the present invention is to provide a method for manufacturing a semiconductor element, and a light-emitting diode and a power device having the semiconductor element manufactured by the manufacturing method.

  A method for manufacturing a semiconductor device according to the present invention includes a bonding step of bonding a surface of a substrate having a semiconductor layer on a surface side and a polishing support member with a bonding agent via a plate-shaped bonding member, and curing the bonding agent. A curing step, and a polishing step of polishing the back surface of the substrate bonded to the polishing support member via an adhesive member to a predetermined thickness.

  In one embodiment of the present invention, the bonding step includes a first bonding step of bonding an adhesive member having an adhesive layer that receives and cures ultraviolet rays and the surface of the substrate to bond, and an adhesive member bonded to the substrate. And a second bonding step of bonding the polishing support member with an adhesive. The curing process includes a first curing process that is bonded to the substrate in the first bonding process and transmits the adhesive member to irradiate the adhesive layer with ultraviolet rays, and a second curing process that cures the adhesive used in the second bonding process. Curing step.

  In one embodiment of the present invention, in the bonding step, the surface of the substrate and the polishing support member are contained via an adhesive member that contains a heat-softening adhesive and the adhesive is partially exposed to the outer surface. And glue. In the curing step, one main surface of the adhesive member and the surface of the substrate are brought into pressure contact with each other, and the other main surface of the adhesive member is brought into pressure contact with the polishing support member by applying pressure and thermocompression bonding while heating. .

  Preferably, a sapphire substrate is used as the substrate.

  ADVANTAGE OF THE INVENTION According to this invention, it can dice easily, suppressing that a chip | tip or a crack generate | occur | produces in the grinding | polishing and grinding | polishing process of a board | substrate in the manufacturing process of a semiconductor element.

It is sectional drawing which shows the state which adhere | attached the board | substrate and the adhesive member in the manufacturing method of the semiconductor element which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the state which has irradiated the ultraviolet-ray to the adhesive bond layer. It is sectional drawing which shows the state with which the supporting member for grinding | polishing and the adhesive member were adhere | attached. It is sectional drawing which shows the state which grind | polished the back surface of the board | substrate. It is sectional drawing which shows the state by which the dicing tape was adhere | attached on the back surface of the board | substrate after grinding | polishing. It is sectional drawing which shows the state which peeled the adhesive member and the grinding | polishing support member from the board | substrate. It is sectional drawing which shows the state by which the board | substrate was diced. It is sectional drawing which shows the state which adhere | attached the board | substrate and the grinding | polishing support member through the adhesive member in the manufacturing method of the semiconductor element which concerns on Embodiment 2 of this invention. It is sectional drawing which shows the structure of the adhesive member which concerns on the same embodiment. It is sectional drawing which shows the state which grind | polished the back surface of the board | substrate. It is sectional drawing which shows the state by which the dicing tape was adhere | attached on the back surface of the board | substrate after grinding | polishing.

  Hereinafter, a method for manufacturing a semiconductor element according to Embodiment 1 of the present invention, and a light-emitting diode and a power device having the semiconductor element manufactured by the manufacturing method will be described with reference to the drawings. In the following description of the embodiments, the same or corresponding parts in the drawings are denoted by the same reference numerals, and the description thereof will not be repeated.

Embodiment 1
FIG. 1 is a cross-sectional view showing a state where a substrate and an adhesive member are bonded in the method of manufacturing a semiconductor device according to the first embodiment of the present invention. As shown in FIG. 1, in the method for manufacturing a semiconductor element according to the present embodiment, an adhesive member 20 is bonded to the surface 10 </ b> A of the sapphire substrate 10 as a first bonding process. The substrate is not limited to a sapphire substrate, and may be any substrate suitable for forming a semiconductor layer such as a silicon substrate or a glass substrate.

  A semiconductor layer (not shown) is formed on the surface 10A side of the sapphire substrate 10. As the semiconductor layer, for example, an AlN layer and a GaN layer are formed. In the case of a semiconductor element used for an LED, the semiconductor layer includes a light emitting layer. In the case of a semiconductor element used for a power device, the semiconductor layer has a higher breakdown voltage, a larger current, a higher speed and a higher frequency compared to a normal semiconductor element.

  The adhesive member 20 includes, for example, a plate-like base material 21 made of polyethylene terephthalate (PET) and an adhesive layer 22 formed on one main surface of the base material 21. The thickness of the base material 21 is, for example, not less than 25 μm and not more than 200 μm. The material of the base material 21 is not limited to PET, and may be a resin material that is less elastically deformed when pressure is applied, such as acrylic resin, polycarbonate resin, cycloolefin polymer, polystyrene resin, and functional norbornene resin. .

  The adhesive layer 22 is made of a material that is cured by receiving ultraviolet rays, and is made of, for example, a resin material containing an acrylic monomer or a photopolymerization initiator. Preferably, the adhesive layer 22 is an ultraviolet curable resin that cures to an extent that hardly undergoes elastic deformation after receiving ultraviolet light. Moreover, the material which comprises the adhesive bond layer 22 has heat softening property. The thickness of the adhesive layer 22 is, for example, 5 μm or more and 100 μm or less.

  Since the adhesive layer 22 has viscosity in a state before receiving the ultraviolet rays, the sapphire substrate 10 and the base material 21 of the adhesive member 20 are separated from the adhesive layer of the adhesive member 20 as shown in FIG. 22 is bonded.

  FIG. 2 is a cross-sectional view showing a state in which the adhesive layer is irradiated with ultraviolet rays. As shown in FIG. 2, as a first curing step, ultraviolet rays 31 are irradiated from above the adhesive member 20 by the ultraviolet irradiation device 30. The ultraviolet rays 31 irradiated from the ultraviolet irradiation device 30 pass through the base material 21 of the adhesive member 20 and reach the adhesive layer 22. The adhesive layer 22 irradiated with ultraviolet rays is cured to form an adhesive layer 22A. An adhesive member 20A composed of the cured adhesive layer 22A and the base material 21 is bonded to the surface 10A of the sapphire substrate 10 with almost no elasticity. As the ultraviolet irradiation device 30, an ultraviolet high pressure mercury lamp or an ultraviolet LED can be used.

  FIG. 3 is a cross-sectional view illustrating a state where the polishing support member and the adhesive member are bonded. As shown in FIG. 3, as a second bonding step, the bonding member 20 </ b> A bonded to the sapphire substrate 10 and the polishing support member 50 are bonded by an adhesive 40. As the adhesive 40, for example, heat softening wax or bond can be used. The adhesive 40 is cured at room temperature. When the adhesive 40 is cured in the second curing step, the sapphire substrate 10 is bonded to the polishing support member 50 with the adhesive member 20A and the adhesive 40 both having little elasticity interposed therebetween. As the polishing support member 50, a plate-like member made of a material such as ceramic, aluminum, or stainless steel can be used. Preferably, the polishing support member 50 is subjected to grinding or polishing, and both surfaces are flattened.

  FIG. 4 is a cross-sectional view showing a state where the back surface of the substrate is polished. As shown in FIG. 4, the back surface 10 </ b> B of the sapphire substrate 10 is polished in a state where it is indirectly bonded and supported by the polishing support member 50. In the case of a semiconductor element used for an LED, the sapphire substrate 10 is polished until a predetermined finishing thickness of 80 μm or less is obtained. In the case of a semiconductor element used for a power device, it is polished until a predetermined finished thickness of 60 μm or less is reached.

  FIG. 5 is a cross-sectional view showing a state where a dicing tape is bonded to the back surface of the substrate after polishing. As shown in FIG. 5, a dicing tape 60 is bonded to the back surface 10B of the sapphire substrate 10 that has been polished to a predetermined thickness. The dicing tape 60 is affixed to a metal carrier frame.

  The dicing tape 60 is, for example, an acrylic adhesive material having a thickness of 5 μm or more and 50 μm or less, or an epoxy type and polyimide on a base material made of any one of vinyl chloride, polyolefin, and PET having a thickness of 80 μm or more and 200 μm or less. Any one of adhesive materials that can be thermocompression bonded such as a system is applied.

  FIG. 6 is a cross-sectional view showing a state where the adhesive member and the polishing support member are peeled from the substrate. As shown in FIG. 6, after polishing the sapphire substrate 10, the adhesive member 20A and the polishing support member 50 are removed by peeling the adhesive layer 22A of the adhesive member 20A from the surface 10A of the sapphire substrate 10. The

  As a method of peeling the adhesive layer 22A from the surface 10A of the sapphire substrate 10, the adhesive member 20A and the polishing support member 50 are integrally formed from the sapphire substrate 10 while the adhesive layer 22A is softened by heating. There is a method of peeling. As another method, the polishing support member 50 is first peeled from the adhesive member 20A in a state where the adhesive layer 22A and the adhesive 40 are softened by heating the adhesive layer 22A and the adhesive 40. Then, there is a method of peeling the adhesive member 20 </ b> A from the sapphire substrate 10.

  FIG. 7 is a cross-sectional view showing a state where the substrate is diced. As shown in FIG. 7, the sapphire substrate 10 is cut into chips while being bonded to the dicing tape 60. As a result, a plurality of semiconductor chips 100 including semiconductor elements are manufactured. Finally, the semiconductor chip 100 is peeled from the dicing tape 60.

  By using the semiconductor device manufacturing method, the sapphire substrate 10 is bonded to the polishing support member 50 by the adhesive member 20A and the adhesive 40 having almost no elasticity during the polishing step. The occurrence of fluttering due to impact from cutting water or a grindstone is reduced. Therefore, when a substrate harder than a silicon substrate such as the sapphire substrate 10 is polished to a thickness of 80 μm or less, the substrate is prevented from being chipped or cracked. The sapphire substrate 10 having a thickness of 80 μm or less is easily diced in the dicing process. As a result, the defect rate generated in the manufacturing process is reduced, so that the yield of semiconductor elements is improved.

  In addition, since the adhesive layer 22A is softened when the adhesive member 20A is peeled from the sapphire substrate 10, a residual adhesive that is likely to occur when a sticky member such as a double-sided tape is peeled from the substrate, It hardly occurs on the surface 10A of the sapphire substrate 10. Therefore, it is possible to reduce the defect occurrence rate of the semiconductor element due to the residual adhesive.

  In the present embodiment, the dicing process is performed using the dicing tape 60, but the adhesive member 20 </ b> A is replaced with the dicing tape 60 in a state where the polishing support member 50 is peeled from the adhesive member 20 </ b> A after the sapphire substrate 10 is polished. And a dicing process may be performed. In this case, the sapphire substrate 10 is diced from the back surface 10B side.

  By manufacturing a semiconductor element using the above method, quality stability and production efficiency of an LED or a power device using the semiconductor element manufactured by the manufacturing method are improved.

  In Experimental Example 1 below, the substrate in the polishing process is used when the substrate is polished in the manufacturing method of the present embodiment, and as a comparative example, the substrate is polished without performing ultraviolet irradiation in the manufacturing method of the present embodiment. The presence or absence of chipping or cracking was confirmed.

Experimental example 1
As a substrate, a sapphire substrate having a 2 inch square and a thickness of 393 μm and a sapphire substrate having a 2 inch square and a thickness of 391 μm were prepared. In each of the two sapphire substrates, a semiconductor layer including an AlN layer and a GaN layer is formed on the surface side. A sapphire substrate having a thickness of 393 μm is referred to as a substrate X, and a sapphire substrate having a thickness of 391 μm is referred to as a substrate Y.

  Two adhesive members having a 16 μm thick base material made of PET and an adhesive layer made of a UV curable resin were prepared. The adhesive members were bonded to the surface of the substrate X or the surface of the substrate Y, respectively.

UV was irradiated from the base material side of the adhesive member adhered to the surface of the substrate X toward the entire surface of the base material with a UV high-pressure mercury lamp at a UV illuminance of 300 mW / cm ² for 30 seconds. No UV irradiation is performed on the substrate Y.

  Next, one ceramic plate having a diameter of 300 mm was prepared as a polishing support member. As the polishing support member, the base material of the adhesive member bonded to the substrate X and the base material of the adhesive member bonded to the substrate Y using Sky Liquid (registered trademark) 751M manufactured by Nikka Seiko as the adhesive are used. And thermocompression bonded.

  As a polishing step, first, a polishing support member in which the substrate X and the substrate Y were bonded to each other through an adhesive member was placed on the polishing table in the grinding apparatus. Then, the back surface of the board | substrate X and the board | substrate Y was ground with the cutting speed of 0.02 mm / min using the diamond grindstone. The thickness of the substrate X and the substrate Y was measured every 1 minute of grinding time, and it was confirmed whether the substrate was chipped or cracked.

  In the substrate X, chips and cracks were not observed when polished to a thickness of 58 μm, but chips or cracks were observed when polished to a thickness of 34 μm. In the substrate Y, chips and cracks were not observed when polished to a thickness of 102 μm, but chips or cracks were observed when polished to a thickness of 88 μm. From this result, it was confirmed that the occurrence of chipping or cracking in the substrate due to the impact of polishing is reduced by irradiating ultraviolet rays and curing the adhesive layer.

  Hereinafter, a method for manufacturing a semiconductor element according to Embodiment 2 of the present invention, and a light-emitting diode and a power device including the semiconductor element manufactured by the manufacturing method will be described with reference to the drawings.

Embodiment 2
FIG. 8 is a cross-sectional view showing a state in which the substrate and the polishing support member are bonded via an adhesive member in the method of manufacturing a semiconductor element according to the second embodiment of the present invention. FIG. 9 is a cross-sectional view showing the structure of the adhesive member according to this embodiment.

  As shown in FIG. 8, in the method for manufacturing a semiconductor device according to this embodiment, as a bonding process, one main surface of the bonding member 70 is bonded to the surface 10 </ b> A of the sapphire substrate 10 and bonded to the polishing support member 50. The other main surface of the member 70 is bonded. Since the configuration other than the adhesive member 70 is the same as that of the first embodiment, description thereof will not be repeated.

  As shown in FIG. 9, the adhesive member 70 according to the present embodiment includes a base material 71 made of plate-like PET having a plurality of holes, and a heat softening adhesive located in the holes of the base material 71. Agent 72. The thickness of the base material 71 is, for example, not less than 5 μm and not more than 200 μm. The material of the base material 71 is not limited to PET, and may be a resin material with little elastic deformation when pressure is applied, such as acrylic resin, polycarbonate resin, cycloolefin polymer, polystyrene resin, and functional norbornene resin. .

  As the adhesive 72, for example, heat softening wax or bond can be used. The adhesive 72 is cured at room temperature. The adhesive 72 is partially exposed on the outer surface of the adhesive member 70. Preferably, the hole portion of the base material 71 is formed uniformly on the entire main surface of the base material 71, so that the adhesive 72 is evenly arranged on the outer surface of the adhesive member 70. The base material 71 may be a structure that can contain the adhesive 72 partially exposed on the outer surface, and may be formed in a porous structure.

  The portion of the adhesive 72 exposed on one main surface of the adhesive member 70 is in contact with the surface 10 </ b> A of the sapphire substrate 10 to bond the adhesive member 70 and the sapphire substrate 10. The portion of the adhesive 72 exposed on the other main surface of the adhesive member 70 is in contact with the polishing support member 50 to bond the adhesive member 70 and the polishing support member 50 together.

  Thereafter, as a curing process, the polishing support member 50 and the sapphire substrate 10 bonded to each other are heated and pressed and thermocompression bonded, whereby one of the main members of the adhesive member 70 is softened while the adhesive 72 is softened. The surface and the surface 10A of the sapphire substrate 10 are pressed against each other, and the other main surface of the adhesive member 70 and the polishing support member 50 are pressed against each other.

  At this time, the adhesive 72 exists as an extremely thin layer at the boundary between the adhesive member 70 and the sapphire substrate 10 and at the boundary between the adhesive member 70 and the polishing support member 50. Therefore, the sapphire substrate 10 and the base material 71 of the adhesive member 70 are substantially in surface contact, and the polishing support member 50 and the base material 71 of the adhesive member 70 are in surface contact. In this state, the adhesive 72 is cooled and hardened.

  FIG. 10 is a cross-sectional view showing a state where the back surface of the substrate is polished. As shown in FIG. 10, the back surface 10 </ b> B of the sapphire substrate 10 is polished in a state where it is indirectly bonded to and supported by the polishing support member 50. In the case of a semiconductor element used for an LED, the sapphire substrate 10 is polished until a predetermined finishing thickness of 80 μm or less is obtained. In the case of a semiconductor element used for a power device, it is polished until a predetermined finished thickness of 60 μm or less is reached.

  FIG. 11 is a cross-sectional view showing a state where a dicing tape is bonded to the back surface of the substrate after polishing. As shown in FIG. 11, the dicing tape 60 is bonded to the back surface 10B of the sapphire substrate 10 polished to a predetermined thickness.

  Thereafter, as shown in FIG. 6, the adhesive member 70 is peeled from the surface 10 </ b> A of the sapphire substrate 10. As a method of peeling the adhesive member 70 from the surface 10 </ b> A of the sapphire substrate 10, the adhesive member 70 is peeled from the sapphire substrate 10 with the adhesive 72 softened by heating the adhesive member 70.

  Next, as shown in FIG. 7, the sapphire substrate 10 is cut into chips while being bonded to the dicing tape 60. As a result, a plurality of semiconductor chips 100 including semiconductor elements are manufactured. Finally, the semiconductor chip 100 is peeled from the dicing tape 60.

  By using the semiconductor element manufacturing method described above, the sapphire substrate 10 is bonded to the polishing support member 50 via the adhesive member 70 having little elasticity during the polishing process. Or generation | occurrence | production of the fluttering by the impact from a grindstone is reduced. Therefore, when a substrate harder than a silicon substrate such as the sapphire substrate 10 is polished to a thickness of 80 μm or less, the substrate is prevented from being chipped or cracked. The sapphire substrate 10 having a thickness of 80 μm or less is easily diced in the dicing process. As a result, the defect rate generated in the manufacturing process is reduced, so that the yield of semiconductor elements is improved.

  Further, since the sapphire substrate 10, the adhesive member 70, and the polishing support member 50 are bonded to each other by pressure contact, the layer thickness of the adhesive 72 is extremely thin, and the planar portion of the main surface of the polishing support member 50 and the sapphire The degree of parallelism with the flat portion of the back surface 10B of the substrate 10 can be increased. As a result, when the polishing support member 50 is supported and the sapphire substrate 10 is polished, the sapphire substrate 10 can be easily flattened.

  By manufacturing a semiconductor element using the above method, quality stability and production efficiency of an LED or a power device using the semiconductor element manufactured by the manufacturing method are improved.

  In the present embodiment, the adhesive member 70 including the plate-like base material 71 having a plurality of holes is used, but dots are placed on the outer surface of the plate-like base material having no holes. An adhesive member in which the adhesive 72 is applied in a shape may be used. In this case, when thermocompression bonding, the layer of the adhesive 72 is thin, the sapphire substrate 10 and the base material of the adhesive member are substantially in surface contact, and the polishing support member 50 and the base material of the adhesive member are in surface contact. It is preferably in contact. Even in this case, fluttering of the substrate in the polishing process is reduced, and chipping or cracking in the substrate is suppressed.

  In Experimental Example 2 below, when the substrate is polished in the manufacturing method of the present embodiment, and as a comparative example, the thickness is 5 μm on both surfaces of the plate-like substrate having no hole in the manufacturing method of the present embodiment. In the case where the substrate was polished using an adhesive member having an adhesive layer, the presence or absence of chipping or cracking of the substrate in the polishing process was confirmed.

Experimental example 2
A sapphire substrate having a 2 inch square and a thickness of 423 μm and a sapphire substrate having a 2 inch square and a thickness of 422 μm were prepared. In each of the two sapphire substrates, a semiconductor layer including an AlN layer and a GaN layer is formed on the surface side. A sapphire substrate having a thickness of 423 μm is referred to as a substrate V, and a sapphire substrate having a thickness of 422 μm is referred to as a substrate W.

  As an adhesive member of the present embodiment, an adhesive member S made of a base material made of PET and having a plurality of holes with a thickness of 10 μm and a thermosoftening adhesive supplied to the holes was prepared. As an adhesive member of a comparative example, an adhesive member T composed of a base material made of PET having a thickness of 10 μm and no holes and an adhesive layer formed on both surfaces of the base material with a thickness of 5 μm is provided. prepared.

  Next, one ceramic plate having a diameter of 300 mm was prepared as a polishing support member. The adhesive member S was thermocompression bonded to the surface of the substrate X and the polishing support member, and at the same time, the adhesive member T was thermocompression bonded to the surface of the substrate Y and the polishing support member.

  As a polishing process, first, a polishing support member to which the substrate V and the substrate W were bonded through the bonding member S or the bonding member T, respectively, was placed on the polishing table in the grinding apparatus. Then, the back surface of the board | substrate V and the board | substrate W was ground with the cutting rate of 0.02 mm / min using the diamond grindstone. The thickness of the substrate V and the substrate W was measured every 1 minute of grinding time, and it was confirmed whether the substrate was chipped or cracked.

  In the substrate V, no chipping or cracking was observed when polished to a thickness of 48 μm, but chipping or cracking was observed when polishing to a thickness of 24 μm. In the substrate W, chips and cracks were not observed when polished to a thickness of 101 μm, but chips or cracks were observed when polished to a thickness of 89 μm. From this result, it was confirmed that the occurrence of chipping or cracking in the substrate due to the impact of polishing is reduced by using the adhesive member 70 and thermocompression bonding.

  In addition, the said embodiment and the said experimental example which were disclosed this time are illustrations in all the points, Comprising: It does not become the basis of limited interpretation. Therefore, the technical scope of the present invention is not interpreted only by the above-described embodiments and experimental examples, but is defined based on the description of the scope of claims. Further, all modifications within the meaning and scope equivalent to the scope of the claims are included.

  DESCRIPTION OF SYMBOLS 10 Sapphire substrate, 10A surface, 10B back surface, 20,20A, 70 Adhesive member, 21,71 Base material, 22,22A Adhesive layer, 30 Ultraviolet irradiation apparatus, 31 Ultraviolet, 40,72 Adhesive, 50 Polishing support member , 60 dicing tape, 100 semiconductor chip.

Claims (6)

An adhesion step of adhering the surface of the substrate having the semiconductor layer on the surface side and the polishing support member with an adhesive via a plate-like adhesive member;
A curing step for curing the adhesive;
A method of manufacturing a semiconductor element, comprising: a polishing step of polishing a back surface of the substrate bonded to the polishing support member via the adhesive member to obtain a predetermined thickness. The adhering step includes a first adhering step in which the adhesive member having an adhesive layer that receives ultraviolet light to be cured and the surface of the substrate are brought into contact with each other, the adhesive member adhered to the substrate, and the polishing A second bonding step of bonding the supporting member to the support member with an adhesive,
The curing step is used in the first curing step, which is bonded to the substrate in the first bonding step, transmits the adhesive member and irradiates the adhesive layer with ultraviolet rays, and the second bonding step. The manufacturing method of the semiconductor element of Claim 1 including the 2nd hardening process of hardening an adhesive agent. In the bonding step, the surface of the substrate and the polishing support member are bonded via the bonding member that contains a heat softening adhesive and the bonding agent is partially exposed to the outer surface. ,
In the curing step, one main surface of the adhesive member and the surface of the substrate are brought into pressure contact with each other by pressurizing and thermocompression bonding while heating, and the other main surface of the adhesive member and the polishing support The manufacturing method of the semiconductor element of Claim 1 which press-contacts a member.   The method for manufacturing a semiconductor element according to claim 1, wherein a sapphire substrate is used as the substrate.   A light emitting diode comprising a semiconductor element produced by the method for producing a semiconductor element according to claim 1.   A power device having a semiconductor element manufactured by the method for manufacturing a semiconductor element according to claim 1.

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