JP2011023692A - Dicing-die bonding tape and method of manufacturing the same, and method of manufacturing semiconductor chip - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dicing-die bonding tape that facilitates sticking and positioning of a semiconductor wafer, enhances machinability in dicing, and improves picking-up performance for a semiconductor chip with a pressure-sensitive adhesive layer after the dicing. <P>SOLUTION: The dicing-die bonding tape 1 includes: a base layer 4 having a non-sticky part 4A and a sticky part 4B in a region outside the non-sticky part 4A; and the pressure-sensitive layer 3 laminated on one surface 4a of the base layer 4. The non-sticky part 4A has a region which is larger than the pressure-sensitive adhesive layer 3 and in which the non-sticky part 4A protrudes out from an outer circumferential side face 3b of the pressure-sensitive adhesive layer 3, which in turn is larger than the semiconductor wafer stuck on the pressure-sensitive adhesive layer 3. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a dicing die bonding tape used for dicing a semiconductor wafer to obtain a semiconductor chip and die bonding the semiconductor chip, a method for manufacturing the dicing die, and a method for manufacturing a semiconductor chip using the dicing die bonding tape. About.

  Conventionally, a dicing die bonding tape is used to cut out a semiconductor chip from a semiconductor wafer and mount the semiconductor chip on a substrate or the like.

  As an example of the dicing die bonding tape, Patent Document 1 below discloses a dicing die bonding tape in which an adhesive layer is laminated on one side of an adhesive layer. The pressure-sensitive adhesive layer is formed of a radiation curable pressure-sensitive adhesive. The adhesive layer is a die bonding layer that is taken out together with the semiconductor chip after the semiconductor wafer is attached and the semiconductor wafer is diced.

  The central region of the pressure-sensitive adhesive layer to which the adhesive layer is attached is irradiated with radiation in order to reduce the adhesive force. The region of the outer part surrounding the central region of the pressure-sensitive adhesive layer is not irradiated with radiation and has high adhesive strength.

  When dicing a semiconductor chip using the dicing-die bonding tape described in Patent Document 1, a semiconductor wafer is attached to the central region of the adhesive layer. Further, a dicing ring is attached to the region of the outer portion of the adhesive layer. Thereafter, the semiconductor wafer is diced together with the adhesive layer. After dicing, the semiconductor chip with the adhesive layer is peeled off from the pressure-sensitive adhesive layer and taken out. The taken-out semiconductor chip with the adhesive layer is mounted on the substrate from the adhesive layer side.

Japanese Patent Laid-Open No. 2004-13489

  In the dicing-die bonding tape described in Patent Document 1, it is difficult to attach a semiconductor wafer to an appropriate position in the central region of the pressure-sensitive adhesive layer where the adhesive layer is attached. Moreover, the blade used at the time of dicing may contact the adhesive layer which is not irradiated with radiation, and there exists a possibility that machinability may fall. Furthermore, there is a possibility that the pick-up property may be reduced due to the decrease in the cutting property. Furthermore, the material constituting the adhesive layer may be restricted in order to attach the dicing ring.

  An object of the present invention is to easily attach and position a semiconductor wafer, improve the machinability during dicing, and improve the pick-up property of the semiconductor chip with an adhesive layer after dicing. It is to provide a dicing-die bonding tape that can be produced, a method for producing the same, and a method for producing a semiconductor chip using the dicing-die bonding tape.

  According to a wide aspect of the present invention, a non-adhesive part, a base material layer having an adhesive part in the region of the outer part of the non-adhesive part, and an adhesive layer laminated on one surface of the base material layer The non-adhesive part is larger than the adhesive layer, the non-adhesive part has a region protruding outward from the outer peripheral side surface of the adhesive layer, and the adhesive A dicing die bonding tape is provided in which the adhesive layer is larger than the semiconductor wafer attached to the adhesive layer.

  The adhesive layer is a part used as a die bonding layer. That is, the adhesive layer is a portion taken out together with the semiconductor chip when the semiconductor chip is picked up.

  On the specific situation with the dicing die-bonding tape which concerns on this invention, the said base material layer is formed of the crosslinked body which bridge | crosslinked the composition containing an acrylic polymer.

  In another specific aspect of the dicing die bonding tape according to the present invention, the composition has a double bond capable of reacting with an acrylic group and has a weight average molecular weight in the range of 100 to 50,000. Further comprising an oligomer.

  In another specific aspect of the dicing die-bonding tape according to the present invention, the adhesive layer is formed of a curable resin composition containing a curable compound, a curing agent, and polyimide particles.

  In still another specific aspect of the dicing-die bonding tape according to the present invention, the curable compound is an epoxy resin, and the curing agent is a curing agent for epoxy resin.

  The dicing die bonding tape according to the present invention is used when dicing a semiconductor wafer into semiconductor chips and picking up the diced semiconductor chips together with the diced adhesive layer.

  In the dicing die-bonding tape according to the present invention, the base material layer may also serve as a dicing layer during dicing. In this case, dicing can be performed by attaching a semiconductor wafer to the dicing-die bonding tape of the present invention.

  The dicing die bonding tape according to the present invention may further include a dicing layer laminated on the other surface of the base material layer. In this case, expansion or the like in dicing can be performed more reliably by the dicing layer. Therefore, since the substrate layer is not required to have a large function as a dicing layer, the substrate layer can be freely designed with various materials and compositions.

  The manufacturing method of the dicing die-bonding tape which concerns on this invention is an active energy ray in the part which forms the said non-adhesion part of the said base material layer of the composition layer which has the adhesiveness for forming the said base material layer. Before or after the step of obtaining the base layer having the non-adhesive part and the adhesive part in the region of the outer part of the non-adhesive part, and the step of obtaining the base layer. Or a step of laminating an adhesive layer on one surface of the base material layer.

  The method of manufacturing a semiconductor chip according to the present invention includes the step of dicing-die bonding tape configured in accordance with the present invention so that the adhesive layer has a region protruding outward from the outer peripheral side surface of the semiconductor wafer. A step of attaching a semiconductor wafer smaller than the adhesive layer on the surface of the adhesive layer opposite to the surface on which the base material layer is laminated, and dicing on the adhesive portion of the base material layer A step of attaching a ring, a step of dicing the semiconductor wafer together with the adhesive layer, and dividing the semiconductor wafer into individual semiconductor chips; and the adhesive layer to which the semiconductor chip is attached after dicing. Peeling from the base material layer, and taking out the semiconductor chip together with the adhesive layer.

  In a specific aspect of the method for manufacturing a semiconductor chip according to the present invention, the semiconductor chip is taken out after dicing without changing the peeling force between the adhesive layer and the base material layer. In the present invention, the semiconductor chip with an adhesive layer can be taken out without difficulty after dicing without changing the peeling force.

  In the dicing die bonding tape according to the present invention, since the base material layer has an adhesive portion in the region of the outer portion of the non-adhesive portion, the dicing ring can be easily applied to the adhesive portion of the base material layer when dicing the semiconductor wafer. Can be pasted on. Since the dicing ring is attached to the base material layer instead of the adhesive layer, the semiconductor wafer can be easily diced.

  Furthermore, since the adhesive layer is larger than the semiconductor wafer attached to the adhesive layer, and the adhesive layer protrudes outward from the semiconductor wafer, the semiconductor wafer is attached to the adhesive layer. In addition, a part of the semiconductor wafer can be easily attached without protruding to the outside of the adhesive layer. Furthermore, since the non-adhesive part of the base material layer is larger than the adhesive layer, and the non-adhesive part protrudes outside the adhesive layer, the part where the semiconductor wafer is attached after pasting The non-adhesive part is certainly present on one side of the adhesive layer. For this reason, the cutting property in the case of dicing and the pick-up property after dicing can be improved. Therefore, production loss can be reduced and yield can be improved.

  Furthermore, when cutting a semiconductor wafer with a blade, it is necessary to cut the semiconductor wafer so that the blade reaches outside the outer peripheral side surface of the semiconductor wafer in order to reliably cut the semiconductor wafer. If the blade used in the dicing process touches the adhesive portion of the base material layer, it cannot be cut cleanly, pick-up performance deteriorates, and production efficiency decreases. According to the present invention, the non-adhesive part of the base material layer is larger than the semiconductor wafer, and the non-adhesive part of the base material layer projects outward from the semiconductor wafer, so that the blade is attached to the adhesive part of the base material layer. Hard to touch. For this reason, the adhesive part adheres to the blade, and the blade is not easily contaminated and can be cut cleanly. For this reason, pick-up property can be improved. Furthermore, production loss can be reduced and yield can be improved.

  Moreover, since the manufacturing method of the dicing die-bonding tape which concerns on this invention irradiates an active energy ray to the part which forms the non-adhesion part of a base material layer of the composition layer which has adhesiveness, an adhesive layer It is possible to easily form a base material layer having a non-adhesive part in the region where is adhered and having an adhesive part in a region outside the non-adhesive part.

  In the method for manufacturing a semiconductor chip according to the present invention, it is possible to improve the sticking property, dicing property, and pickup property of a semiconductor wafer.

1A and 1B are a partially cutaway front sectional view and a partially cutaway plan view showing a dicing die bonding tape according to an embodiment of the present invention. FIG. 2 is a partially cutaway front sectional view showing a dicing die bonding tape according to another embodiment of the present invention. FIG. 3 is a plan view showing a semiconductor wafer used for manufacturing a semiconductor chip. FIG. 4 is a view for explaining an example of a method of manufacturing a semiconductor chip using a dicing die bonding tape according to an embodiment of the present invention, and shows a front view showing a state where a semiconductor wafer is placed on a stage. It is sectional drawing. FIG. 5 is a front sectional view showing a state when a semiconductor wafer is attached to the adhesive layer. FIG. 6 is a front sectional view showing a state in which a semiconductor wafer is attached to the adhesive layer. FIG. 7 is a front sectional view showing a state in which the semiconductor wafer with an adhesive layer is turned over and placed on another stage. FIG. 8 is a partially cutaway front sectional view showing a state in which a semiconductor wafer to which an adhesive layer is attached is diced and divided into individual semiconductor chips.

  Hereinafter, the present invention will be clarified by describing specific embodiments and examples of the present invention with reference to the drawings.

  1A and 1B show a dicing die bonding tape according to an embodiment of the present invention in a partially cutaway front sectional view and a partially cutaway plan view.

  As shown in FIGS. 1A and 1B, the dicing die bonding tape 1 has a long release layer 2. On the upper surface 2 a of the release layer 2, the adhesive layer 3, the base material layer 4, and the dicing layer 5 are laminated in this order. Therefore, the adhesive layer 3 is attached to one surface 4 a of the base material layer 4. A dicing layer 5 is attached to the other surface 4 b opposite to the one surface 4 a of the base material layer 4.

  The adhesive layer 3 is a layer used for die bonding of a semiconductor chip. The surface 3a to which the release layer 2 of the adhesive layer 3 is attached is a surface to which the semiconductor wafer is attached.

  The planar shape of the adhesive layer 3, the base material layer 4, and the dicing layer 5 is circular. The outer peripheral side surface of the base material layer 4 is not covered with the adhesive layer 3. The substrate layer 4 is larger than the adhesive layer 3 in plan view.

  In plan view, the size of the dicing layer 5 is substantially equal to the size of the base material layer 4. The size of the dicing layer 5 may be different from the size of the base material layer 4. That is, the size of the dicing layer 5 may be larger or smaller than the size of the base material layer 4 as long as the effect of the present invention is not impaired. The size of the dicing layer 5 is preferably larger than the size of the base material layer 4.

  In the dicing die bonding tape according to the present invention, the dicing layer 5 may be omitted, and the base material layer 4 may also serve as the dicing layer.

  When dicing, the semiconductor chip can be more effectively prevented from jumping, so that the adhesive layer 3 of the base material layer 4 is applied to the other surface 4b opposite to the one surface 4a. It is preferable that the dicing layer 5 is attached. In this case, since expandability etc. are not requested | required largely by the base material layer 4, the material and composition which comprise the base material layer 4 can be selected from a wider range.

  Further, in the dicing die bonding tape 1, since a dicing ring can be attached to the base material layer 4 as described later, it is not necessary to attach a dicing ring to the dicing layer 5. For this reason, the dicing layer 5 can be omitted. Further, since it is not necessary to attach a dicing ring to the dicing layer 5, the dicing layer 5 may not have adhesive force. Therefore, the material and composition which comprise the dicing layer 5 can be selected from a wider range.

  As shown in FIGS. 1 (a) and 1 (b), a plurality of laminates having an adhesive layer 3, a base material layer 4 and a dicing layer 5 are formed on the upper surface 2a of the long release layer 2. Arranged at intervals. Further, protective sheets 6 and 7 are provided on the upper surface 2 a of the release layer 2. Note that the protective sheets 6 and 7 may not be provided. Moreover, the thickness and shape of the release layer 2, the adhesive layer 3, the base material layer 4, and the dicing layer 5 are not particularly limited.

  The base material layer 4 has a non-adhesive part 4A having non-adhesiveness. The non-adhesive portion 4 </ b> A is provided in the central region of the base material layer 4. The non-adhesive portion 4A is provided at a portion corresponding to a position where the semiconductor wafer of the adhesive layer 3 is attached. The non-adhesive portion 4A is larger than the adhesive layer 3 in plan view. Accordingly, the non-adhesive portion 4A has a region that protrudes outward from the outer peripheral side surface 3b of the adhesive layer 3. For this reason, when a semiconductor wafer is affixed to the adhesive layer 3, the semiconductor wafer can be accurately aligned with the portion where the non-adhesive portion 4A of the adhesive layer 3 is affixed. After pasting, the non-adhesive portion 4A can be reliably arranged on one side of the adhesive layer 3 to which the semiconductor wafer is pasted. For this reason, the semiconductor chip with the adhesive layer 3 can be easily peeled from the base material layer 4 after dicing. For this reason, production loss can be reduced and yield can be improved.

  The term “non-adhesive” includes not only the surface having no adhesiveness but also the case where the surface has such an adhesiveness that it does not stick when touched with a finger. Specifically, “non-adhesive” means that when the non-adhesive portion of the base material layer 4 is attached to a stainless steel plate and the base material layer is peeled off at a peeling speed of 300 mm / min, the adhesive strength is It means 0.05N / 25mm width or less.

  The base material layer 4 has a non-adhesive part 4A and an adhesive part 4B in the region of the outer part of the non-adhesive part 4A. Since the base material layer 4 is larger than the adhesive layer 3, the base material layer 4 has a region projecting laterally from the outer peripheral side surface 3 b of the adhesive layer 3. In the projecting region of the base material layer 4, the base material layer 4 has an adhesive part 4B having adhesiveness. The adhesive portion 4 </ b> B of the base material layer 4 is attached to the upper surface 2 a of the release layer 2.

  The base material layer 4 is not necessarily required to have the adhesive portion 4B in all the regions of the base material layer 4 that protrude from the outer peripheral side surface 3b of the adhesive layer 3 to the side. The base material layer 4 should just have the adhesion part 4B in the at least one part area | region of this projecting area | region of the base material layer 4 so that a dicing ring can be affixed.

  Thus, when the base material layer 4 has the adhesion part 4B in the area | region of the outer part of the non-adhesion part 4A, a dicing ring can be easily affixed on the adhesion part 4B in the case of dicing.

  The non-adhesive part 4A and the adhesive part 4B of the base material layer 4 are integrally formed. The non-adhesive part 4A and the adhesive part 4B are formed of the same material, and are not formed of different materials.

  The base material layer 4 can be formed using, for example, an active energy ray-curable or thermosetting adhesive composition. In the case of an active energy ray-curable composition, the adhesiveness of the base material layer 4 can be partially varied by partially adjusting the irradiation amount of the active energy ray with respect to the composition. In order for the base material layer 4 to have non-adhesiveness, the irradiation amount of the active energy rays may be increased. In order to make the base material layer 4 have adhesiveness, it is only necessary not to irradiate active energy rays or to reduce the irradiation amount of active energy rays. The composition will be described in detail later.

  The base material layer 4 is preferably formed using an active energy ray-curable adhesive composition. The irradiation amount of the active energy ray to the non-adhesive part 4A is preferably larger than the irradiation amount of the active energy ray to the adhesive part 4B.

  Moreover, the adhesive layer 3 is larger than the semiconductor wafer attached to the adhesive layer 3 in plan view. The size of the semiconductor wafer, the adhesive layer 3 and the non-adhesive portion 4A satisfies the relationship of the following formula (1).

(Size of semiconductor wafer) <(size of adhesive layer) <(size of non-adhesive portion) (1)
The main feature of this embodiment is that the non-adhesive portion 4A is larger than the adhesive layer 3, and the non-adhesive portion 4A has a region protruding outward from the outer peripheral side surface 3b of the adhesive layer 3. In addition, the adhesive layer 3 is larger than the semiconductor wafer, and the adhesive layer 3 has a region protruding outward from the outer peripheral side surface of the semiconductor wafer. Thereby, a semiconductor wafer can be easily affixed without protruding onto the adhesive layer 3. Furthermore, when a semiconductor wafer is affixed on the adhesive layer 3, the semiconductor wafer is securely affixed to the adhesive layer 3 portion where the non-adhesive portion 4A of the base layer 4 is provided below. Can do. That is, the non-adhesive part 4A of the base material layer 4 is larger than the adhesive layer 3, and the non-adhesive part 4A of the base material layer 4 projects outward from the outer peripheral side surface 3b of the adhesive layer 3. After the pasting, the non-adhesive portion 4A of the base material layer 4 is surely provided on one side of the adhesive layer 3 portion to which the semiconductor wafer is pasted. For this reason, the cutting property in the case of dicing and the pick-up property after dicing can be improved. Therefore, production loss can be reduced and yield can be improved.

  On the other hand, when the size of the semiconductor wafer and the size of the adhesive layer 3 or the non-adhesive portion 4A are the same as the size configuration as described above, it may be difficult to attach the semiconductor wafer, The semiconductor wafer may not be reliably attached to the adhesive layer 3 portion where the non-adhesive portion 4A of the base material layer 4 is provided below. Furthermore, when the non-adhesive part 4A of the base material layer 4 is smaller than the adhesive layer 3 and the non-adhesive part 4A of the base material layer 4 is covered with the adhesive layer 3, A semiconductor wafer may not be reliably affixed to the adhesive layer 3 part in which the non-adhesion part 4A of the base material layer 4 is provided. For this reason, chip skipping occurs during dicing, or chip cracking occurs during pick-up after dicing. Furthermore, it may be difficult to peel the semiconductor wafer together with the adhesive layer 3 from the non-adhesive portion 4A of the base material layer 4.

  In the present embodiment, by providing the above-described size configuration, the above-described problems are hardly caused, production loss can be greatly reduced, and the yield can be significantly improved.

  In a plan view, the area X of the region of the adhesive layer 3 projecting outward from the outer side surface of the semiconductor wafer is 0.5% or more when the total area of the adhesive layer 3 is 100%. It is preferable that A more preferable lower limit of the area X is 6%. A preferable upper limit of the area X is 24%, and a more preferable upper limit is 20%. When the preferable area X is satisfied, the semiconductor wafer can be easily attached.

  Further, in a plan view, the area Y of the region projecting outward from the outer peripheral side surface 3b of the adhesive layer 3 of the non-adhesive portion 4A is set to 0. 0 when the total area of the non-adhesive portion 4A is 100%. It is preferably 5% or more. A more preferable lower limit of the area Y is 5%. A preferable upper limit of the area Y is 24%, and a more preferable upper limit is 20%. When the preferable area Y is satisfied, it is possible to easily avoid the adhesion part 4B from adhering to the blade by the dicing process and contaminating it, and to cut cleanly.

  In order to further improve the pickup property, it is preferable that the peeling force B between the non-adhesive portion 4A and the dicing layer 5 is larger than the peeling force A between the adhesive layer 3 and the non-adhesive portion 4A. When the relationship between the peeling forces A and B is reversed, or when the peeling forces A and B are the same, peeling occurs at the interface between the non-adhesive portion 4A and the dicing layer 5 at the time of pick-up, and pick-up failure tends to occur.

  The peeling force A between the adhesive layer 3 and the non-adhesive part 4A is preferably in the range of 0.025 to 0.2 N / 25 mm. When the peeling force A is within this preferable range, the adhesive layer 3 can be easily peeled from the non-adhesive portion 4A. Further, when dicing the semiconductor wafer or taking out the semiconductor chip, the semiconductor chip is less likely to be damaged. If the peeling force A is too low, chip jumping tends to occur during dicing. When the peeling force A is too high, it becomes difficult to peel the adhesive layer 3 to which the semiconductor chip is attached from the non-adhesive portion 4A.

  The peeling force A is determined by the following method.

  A stainless plate is attached to the surface of the dicing die bonding tape 1 on the side opposite to the surface to which the non-adhesive part 4A of the adhesive layer 3 is attached, and the non-adhesive part 4A is removed from the adhesive layer 3 Peel at a peeling speed of 300 mm / min. The force required for peeling at this time is measured using AGS-100D manufactured by Shimadzu Corporation, and the obtained value is defined as peeling force A.

  The peeling force B between the non-adhesive part 4A and the dicing layer 5 is preferably in the range of 0.21 to 10 N / 25 mm, and more preferably in the range of 0.21 to 1 N / 25 mm. When the peeling force B is within these preferable ranges, the adhesive layer 3 can be easily peeled from the non-adhesive portion 4A. If the peeling force B is too low, peeling occurs at the interface between the non-adhesive portion 4A and the dicing layer 5 during pick-up, and pick-up failure tends to occur.

  The peeling force B can be measured as follows.

  The non-adhesive part 4A is peeled from the dicing layer 5 at a peeling speed of 300 mm / min. The force required for peeling at this time is measured using AGS-100D manufactured by Shimadzu Corporation, and the obtained value is defined as peeling force B.

  The adhesive strength C of the non-adhesive portion 4A is smaller than the adhesive strength D of the adhesive portion 4B.

  The adhesive strength C of the non-adhesive portion 4A of the base material layer 4 is preferably in the range of 0 to 0.05 N / 25 mm.

  The adhesive force D of the adhesive part 4B of the base material layer 4 is preferably in the range of 0.1 to 10 N / 25 mm. A more preferable lower limit of the adhesive strength D of the adhesive part 4B is 0.25 N / 25 mm, a further preferable lower limit is 0.5 N / 25 mm, a more preferable upper limit is 5 N / 25 mm, and a further preferable upper limit is 2.0 N / 25 mm.

  The adhesive strengths C and D can be measured as follows.

  The non-adhesive part 4A or the adhesive part 4B of the base material layer 4 is attached to a stainless steel plate, and the base material layer is peeled off at a peeling speed of 300 mm / min. The force required for peeling at this time is measured using AGS-100D manufactured by Shimadzu Corporation, and the obtained values are defined as adhesive forces C and D.

(Details of material constituting base material layer 4 and base material layer 4)
The base material layer 4 is preferably formed of a composition containing an acrylic polymer. The composition preferably has adhesiveness. The composition is preferably a pressure-sensitive adhesive composition. Examples of the composition include a thermosetting or active energy ray curable composition. Since the adhesive force of the base material layer 4 can be controlled more easily, the composition is preferably an active energy ray-curable composition.

  The base material layer 4 is preferably formed of a crosslinked body obtained by crosslinking a composition containing an acrylic polymer. In this case, the machinability during dicing can be further enhanced. Further, the polarity, storage elastic modulus, or elongation at break of the base material layer 4 can be easily controlled and designed.

  The acrylic polymer is not particularly limited. The acrylic polymer is preferably a (meth) acrylic acid alkyl ester polymer. As the (meth) acrylic acid alkyl ester polymer, a (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms is suitably used. By using the (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms, the polarity of the base material layer 4 can be made sufficiently low, and the surface energy of the base material layer 4 can be made low. And the peelability from the base material layer 4 of the adhesive layer 3 can be made high. When the carbon number of the alkyl group exceeds 18, it may be difficult to produce the base material layer 4. The alkyl group preferably has 6 or more carbon atoms. In this case, the polarity of the base material layer 4 can be further reduced. The “(meth) acrylic acid” means methacrylic acid or acrylic acid.

  The acrylic polymer is preferably a polymer obtained using a (meth) acrylic acid alkyl ester monomer having an alkyl group having 1 to 18 carbon atoms as a main monomer. The acrylic polymer is a (meth) acryl obtained by copolymerizing the main monomer, a functional group-containing monomer, and, if necessary, another modifying monomer that can be copolymerized therewith by a conventional method. More preferably, it is an acid alkyl ester polymer. The number of carbon atoms in the alkyl group of the (meth) acrylic acid alkyl ester polymer is preferably 2 or more, and particularly preferably 6 or more. The acrylic polymer has a weight average molecular weight of about 200,000 to 2,000,000.

  The other modifying monomers are not particularly limited. The other modifying monomer is preferably not a monomer having a carboxyl group. When a monomer having a carboxyl group is used, the polarity of the base material layer 4 is increased. As a result, the pickup property may be deteriorated.

  The (meth) acrylic acid alkyl ester monomer is not particularly limited. The (meth) acrylic acid alkyl ester monomer is an alkyl (meth) acrylate obtained by an esterification reaction between a primary or secondary alkyl alcohol having a C 1-18 alkyl group and (meth) acrylic acid. An ester monomer is preferred.

  Specific examples of the (meth) acrylic acid alkyl ester monomer include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic acid. Examples include n-butyl, t-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, octyl (meth) acrylate, or lauryl (meth) acrylate. As for the said (meth) acrylic-acid alkylester monomer, only 1 type may be used and 2 or more types may be used together.

  Examples of the functional group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, (meth And hydroxyl group-containing monomers such as 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) methyl (meth) acrylate.

  The acrylic polymer is preferably a curable acrylic polymer having a reactive double bond. In this case, the crosslinking density of the crosslinked body obtained by crosslinking the composition containing the curable acrylic polymer can be increased. Examples of the curable acrylic polymer include a curable acrylic polymer having a reactive double bond in the side chain, main chain, or main chain terminal.

  The method for introducing a reactive double bond into the acrylic polymer is not particularly limited. Since the molecular design is easy, the reactive double bond is preferably introduced into the side chain. For example, after preparing a functional group-containing acrylic polymer obtained by copolymerizing an acrylic polymer with a functional group-containing monomer, a functional group (hereinafter referred to as functional group B) that can react with this functional group (hereinafter also referred to as functional group A). And a compound having both a reactive double bond (hereinafter, also referred to as compound C) to the functional group-containing acrylic polymer by condensation reaction or addition reaction so that the reactive double bond remains. The method to introduce is mentioned.

  Examples of the combination of the functional group A and the functional group B include a combination of a carboxyl group and an epoxy group, a carboxyl group and an aziridyl group, or a hydroxyl group and an isocyanate group. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because the reaction can be easily controlled. In the combination of these functional groups, any functional group may be contained in the functional group-containing acrylic polymer, and any functional group may be contained in the compound C. A combination of a functional group-containing acrylic polymer having a hydroxyl group and the above compound having an isocyanate group is preferred.

  Examples of the isocyanate compound having an isocyanate group and a reactive double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, 1,1-bis (acryloyloxymethyl) ethyl isocyanate, or m-isopropenyl-α, α. -Dimethyl benzyl isocyanate etc. are mentioned.

  The functional group-containing acrylic polymer having a hydroxyl group is preferably an acrylic polymer obtained by copolymerizing the above-mentioned hydroxyl group-containing monomer or hydroxyl group-containing ether compound with an acrylic polymer. Examples of the hydroxyl group-containing ether compound include 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, and the like.

  The composition preferably further includes an oligomer having a double bond capable of reacting with an acrylic group and having a weight average molecular weight in the range of 100 to 50,000. This oligomer has high flexibility at room temperature. For this reason, the pick-up property of a semiconductor chip can be improved. Further, the storage elastic modulus and elongation at break of the base material layer 4 can be easily controlled. When the weight average molecular weight of the oligomer is less than 100, the effect of blending the oligomer may not be sufficiently obtained. If the weight average molecular weight of the oligomer exceeds 50,000, the pick-up property of the semiconductor chip may deteriorate.

  The oligomer is not particularly limited. The oligomer is at least one skeleton selected from the group consisting of a polyether skeleton, a polyester skeleton, a butadiene skeleton, a polyurethane skeleton, a silicate skeleton, an isoprene skeleton, a polyalkyl skeleton, a polyacrylonitrile skeleton, a polycarbonate skeleton, and a dicyclopentadiene skeleton. It is preferable to have. Since the oligomer having these skeletons is flexible, the storage elastic modulus and elongation at break of the base material layer 4 can be easily controlled, and the pickup property can be enhanced.

  The oligomer preferably has a flexible skeleton. The skeleton having flexibility refers to a skeleton having a Tg of 25 ° C. or lower. The skeleton having flexibility is preferably a polyether skeleton or a polyester skeleton.

  The acrylic oligomer having a polyether skeleton or a polyester skeleton has high flexibility. Examples of the acrylic oligomer having a polyether skeleton or a polyester skeleton include polypropylene oxide diacrylate or a polyether-based urethane acrylic oligomer. Examples of these commercially available products include M-225 (manufactured by Toa Gosei Co., Ltd.) and UN-7600 (manufactured by Negami Kogyo Co., Ltd.).

  The double bond that can react with the acrylic group is not particularly limited. Examples of the group containing a double bond include a (meth) acryl group, a vinyl group, and an allyl group. Of these, an acrylic group is preferable. In this case, it is easy to control the storage elastic modulus and elongation at break of the base material layer 4.

  It is preferable that two or more double bonds capable of reacting with the acrylic group are contained in one molecule of the oligomer.

  The oligomer having a double bond capable of reacting with the acrylic group is crosslinked with the acrylic polymer by heating or irradiation with active energy rays. By this crosslinking, a skeleton derived from the oligomer is incorporated into the crosslinked body. For this reason, storage elastic modulus or breaking elongation can be controlled to a desired range.

  In addition, two double bonds capable of reacting with the acrylic group may exist at both ends of the molecule, or may exist in the molecular chain. It is preferred that there are two acrylic groups at both ends of the molecule, or there are acrylic groups at both ends of the molecule and in the molecular chain.

  Examples of the polyether skeleton include a polypropylene oxide skeleton and a polyethylene oxide skeleton.

  Examples of the acrylic oligomer having the polyether skeleton and having an acrylic group only at both ends of the molecule include polypropylene oxide diacrylate and polyester urethane acrylic oligomer. Examples of these commercially available products include UA340P and UA4200 (all manufactured by Shin-Nakamura Chemical Co., Ltd.), and Aronix M-1600 and Aronix M-220 (all manufactured by Toa Gosei Co., Ltd.).

  As the acrylic oligomer, a tri- to 10-functional urethane acrylic oligomer is preferably used. In the case of a urethane acrylic oligomer having less than 3 functionalities, the flexibility of the base material layer becomes too high, and cutting scraps are easily generated during dicing. In the case of a urethane acrylic oligomer having more than 10 functions, the base material layer becomes brittle and contamination is likely to occur during dicing.

  Examples of the 3 to 10 functional urethane acrylic oligomer having a polyether skeleton and a polyurethane skeleton include a urethane acryl oligomer having a polypropylene oxide main chain. As these commercial products, U-2PPA, U-4HA, U-6HA, U-15HA, UA-32P, U-324A, U-108A, U-200AX, UA-4400, UA-2235PE, UA-160TM And UA-6100 (all manufactured by Shin-Nakamura Chemical Co., Ltd.), UN-7600, UN-7700, UN-333, and UN-1255 (all manufactured by Negami Industrial Co., Ltd.).

  The oligomer is preferably contained in an amount of 1 part by weight or more based on 100 parts by weight of the acrylic polymer. When the content of the oligomer is less than 1 part by weight, the effect of blending the oligomer may not be sufficiently obtained. The oligomer is preferably contained in an amount of 100 parts by weight or less with respect to 100 parts by weight of the acrylic polymer. When there is too much quantity of the said oligomer, an oligomer will not melt | dissolve and manufacture of a base material layer may be difficult.

  In the case of an oligomer having an acrylic group at both ends, the oligomer is preferably contained in the range of 1 to 100 parts by weight, and in the range of 1 to 50 parts by weight with respect to 100 parts by weight of the acrylic polymer. It is more preferable that it is contained within.

  In the case of a polyfunctional urethane acrylic oligomer, the oligomer is preferably contained within a range of 1 to 50 parts by weight with respect to 100 parts by weight of the (meth) acrylic acid ester polymer. More preferably, it is contained within the range of parts by weight.

  The composition may contain an ultraviolet absorber. Moreover, it is preferable that a composition contains at least one of an active energy ray reaction initiator and a thermal reaction initiator, and it is more preferable that an active energy ray reaction initiator is included. The active energy ray reaction initiator is preferably a photoreaction initiator.

  The active energy rays include ultraviolet rays, electron rays, α rays, β rays, γ rays, X rays, infrared rays and visible rays. Among these active energy rays, ultraviolet rays or electron beams are preferable because they are excellent in curability and hardened products are hardly deteriorated.

  The photoinitiator is not particularly limited. As the photoreaction initiator, for example, a photo radical generator or a photo cation generator can be used. The thermal reaction initiator is not particularly limited. Examples of the thermal reaction initiator include a thermal radical generator.

  The photo radical generator is not particularly limited. Examples of commercially available photo radical generators include Irgacure 184, Irgacure 2959, Irgacure 907, Irgacure 819, Irgacure 651, Irgacure 369, and Irgacure 379 (all of which are manufactured by Ciba Japan), benzoin methyl ether, Examples include benzoin ethyl ether, benzoin isopropyl ether, and lucillin TPO (manufactured by BASF Japan).

  As the photocation generator, onium salts or organometallic complexes can be used. Examples of the onium salts include aromatic diazonium salts, aromatic halonium salts, and aromatic sulfonium salts. Examples of the organometallic complexes include iron-allene complexes, titanocene complexes, and arylsilanol-aluminum complexes.

  Examples of the thermal radical generator include organic peroxides or azo compounds. Examples of the organic peroxide include cumene hydroperoxide, diisopropylbenzene peroxide, di-t-butyl peroxide, lauryl peroxide, benzoyl peroxide, t-butylperoxyisopropyl carbonate, and t-butylperoxy-2- Examples thereof include ethyl hexanoate and t-amyl peroxy-2-ethyl hexanoate. Examples of the azo compound include 2,2′-azobis (isobutyronitrile), 1,1′-azobis (cyclohexanecarbonitrile), 2,2′-azobis (2,4-dimethylvaleronitrile), dimethyl 2, And 2'-azobis (2-methylpropionate).

An isocyanate-based crosslinking agent may be added to the composition in order to control the adhesive force. The isocyanate-based crosslinking agent is not particularly limited. Isocyanate-based crosslinking agents include tolylene diisocyanate, diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, xylylene diisocyanate, hydrogenated xylylene diisocyanate, hydrogenated diphenylmethane diisocyanate, paraphenylene diisocyanate, tetramethylxylylene. Examples thereof include isocyanate monomers such as range isocyanate, dicyclohexylmethane diisocyanate, isophorone diisocyanate, lysine isocyanate, isopropylidenebiscyclohexyl diisocyanate, and tolidine diisocyanate. Dimers, trimers and adducts of these isocyanate monomers may be used. Examples of commercially available products of the adduct include Coronate L, Coronate HL, Coronate 2030, and Millionate MR (all of which are manufactured by Nippon Polyurethane Industry Co., Ltd.).

  The thickness of the base material layer 4 is not particularly limited. The thickness of the base material layer 4 is preferably in the range of 1 to 100 μm. A more preferable lower limit of the thickness of the base material layer 4 is 5 μm, and a more preferable upper limit is 60 μm. If the thickness of the base material layer 4 is too small, the expandability may be insufficient. When the thickness of the base material layer 4 exceeds 100 μm, the thickness may be non-uniform. If the thickness is not uniform, dicing may not be performed properly.

  The base material layer 4 can be obtained, for example, as follows using the above composition.

  A composition layer having adhesiveness for forming the base material layer 4 is formed, for example, on the release layer. Next, at least one of irradiation with active energy rays and heating is performed partially. That is, an active energy ray is irradiated or heated to the part corresponding to the area | region affixed on the adhesive layer 3 of the base material layer 4. FIG. The composition layer is cured (crosslinked) by active energy ray curing or thermal curing, or by active energy ray curing and thermal curing.

  The base material layer 4 having the non-adhesive part 4A and the adhesive part 4B in a region outside the non-adhesive part 4A can be obtained by irradiation with active energy rays or heating. In addition, before or after the step of obtaining the base material layer 4, a dicing die bonding tape can be obtained by laminating the adhesive layer 3 on one surface of the composition layer or the base material layer 4. it can.

  Among active energy ray curing and thermal curing, active energy ray curing is preferably used, and photocuring is particularly preferably used. In the case of active energy ray curing, the non-adhesive portion 4A can be more easily formed in a desired range.

  The active energy ray may be irradiated or heated so that the part which forms the adhesion part 4B of the said composition layer may have moderate adhesiveness.

  The crosslink density of the non-adhesive part 4A of the base material layer 4 is preferably higher than the crosslink density of the adhesive part 4B. When the base material layer 4 is formed, for example, the crosslinking density can be increased by increasing the irradiation amount of the active energy ray to the active energy ray-curable composition.

(Adhesive layer 3)
The adhesive layer 3 is used for bonding a semiconductor chip to a substrate or another semiconductor chip. The adhesive layer 3 is cut along with the semiconductor wafer during dicing.

  The adhesive layer 3 is formed of, for example, a curable resin composition containing a curable compound such as an appropriate curable resin, or a thermoplastic resin. Since the curable resin composition before curing is soft, it is easily deformed by an external force. After obtaining the semiconductor chip with the adhesive layer 3, the obtained semiconductor chip with the adhesive layer 3 is laminated on an adherend such as a substrate from the adhesive layer 3 side. Thereafter, the semiconductor chip can be firmly bonded to the adherend via the adhesive layer 3 by applying heat or light energy to cure the adhesive layer 3. A thermoplastic resin may be used instead of the curable resin.

  The thermosetting resin is not particularly limited. As said thermosetting resin, an epoxy resin or a polyurethane resin etc. are mentioned, for example. The said photocurable resin is not specifically limited. Examples of the photocurable resin include an epoxy resin that is polymerized by a photocationic catalyst such as a photosensitive onium salt, or an acrylic resin having a photosensitive vinyl group. As the curable resin, an epoxy resin, a polyester resin, methyl methacrylate, or a hot-melt adhesive resin is preferably used. Examples of the hot-melt adhesive resin include poly (meth) acrylate resins having butyl acrylate as a main monomer unit. The curable compound is preferably an epoxy resin. As for the said curable resin, only 1 type may be used and 2 or more types may be used together.

  The epoxy resin is not particularly limited. The epoxy resin is preferably an epoxy resin having a polycyclic hydrocarbon skeleton in the main chain. The epoxy resin which has the said polycyclic hydrocarbon skeleton in a principal chain is not specifically limited. Examples of the epoxy resin having a polycyclic hydrocarbon skeleton in the main chain include dicyclopentadiene dioxide, dicyclopentadiene type epoxy resin, naphthalene type epoxy resin, tetrahydroxyphenylethane type epoxy resin, tetrakis (glycidyloxyphenyl). ) Ethane, or 3,4-epoxy-6-methylcyclohexylmethyl-3,4-epoxy-6-methylcyclohexane carbonate.

  A high molecular polymer having a functional group that reacts with the epoxy group may be used together with the curable resin. Examples of the polymer having a functional group that reacts with the epoxy group include an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber, a bisphenol type high molecular weight epoxy resin, an epoxy group-containing phenoxy resin, an epoxy group-containing acrylic resin, and an epoxy. Examples thereof include a group-containing urethane resin or an epoxy group-containing polyester resin. As for the high molecular polymer which has a functional group which reacts with the said epoxy group, only 1 type may be used and 2 or more types may be used together.

  A curing agent is used for curing the curable resin composition. The curing agent is not particularly limited. Examples of the curing agent include heat curing acid anhydride curing agents such as trialkyltetrahydrophthalic anhydride, latent curing agents such as phenol curing agents, amine curing agents and dicyandiamide, or cationic catalyst curing. Agents and the like. It is preferable that the curable compound is an epoxy resin and the curing agent is an epoxy resin curing agent. In this case, the machinability during dicing can be further enhanced, and the pick-up property of the semiconductor chip with an adhesive layer after dicing can be further enhanced. As for the said hardening | curing agent, only 1 type may be used and 2 or more types may be used together. Moreover, in order to adjust the curing rate or the physical properties of the cured product, the curing agent and a curing accelerator may be used in combination.

  The curable resin composition may contain polyimide particles. The adhesive layer 3 is preferably formed of a curable resin composition containing a curable compound, a curing agent, and polyimide particles.

  By adding the polyimide particles, the linear expansion coefficient of the cured product of the resulting adhesive layer can be reduced without adding an inorganic filler or the like to the curable resin composition. Furthermore, the inorganic filler has the effect of decreasing the linear expansion coefficient and simultaneously increasing the elastic modulus, whereas the polyimide particles have the effect of decreasing the linear expansion coefficient while suppressing the increase of the elastic modulus. Generation | occurrence | production of the stress to the semiconductor chip joined to the hardened | cured material of the adhesive agent layer can be prevented by reducing the linear expansion coefficient and elastic modulus of the hardened | cured material of an adhesive agent layer. For this reason, in the case of an adhesive layer using polyimide particles, peeling of the semiconductor chip can be prevented by reducing the generation of stress on the semiconductor chip bonded to the cured product of the adhesive layer. .

  The polyimide compound contained in the polyimide particles is not particularly limited. The polyimide compound is preferably a polyimide compound having an aromatic ring in the main skeleton. By having an aromatic ring in the main skeleton, the polyimide compound has a more rigid and less fluctuating molecular structure, and can further reduce the linear expansion coefficient of the cured product of the adhesive layer.

  The polyimide compound having an aromatic ring in the main skeleton is not particularly limited, and examples thereof include a polyimide compound having an aromatic ring such as phenyl, biphenyl, or naphthalene in the main skeleton. Specific examples of the polyimide compound having an aromatic ring in the main skeleton include poly (N, N′-p-phenylene-biphenyltetracarboxylimide) and the like.

  The minimum with preferable content of the said polyimide compound in the said polyimide particle is 10 weight%. When the content of the polyimide compound is 10% by weight or more, the effect of adding the polyimide particles can be sufficiently obtained, and the cured product of the obtained adhesive layer has a lower linear expansion coefficient and elastic modulus. To have. The minimum with more preferable content of the said polyimide compound in the said polyimide particle is 20 weight%, and a still more preferable minimum is 50 weight%.

  The average particle diameter of the polyimide particles is not particularly limited, but a preferable lower limit is 0.1 μm and a preferable upper limit is 30 μm. When the average particle diameter of the polyimide particles is 0.1 μm or more, the addition of the polyimide particles makes it difficult for the curable resin composition to thicken, so that a sufficient amount of polyimide particles can be added. The linear expansion coefficient of the hardened | cured material of the adhesive agent layer obtained as the average particle diameter of the said polyimide particle is 30 micrometers or less becomes still lower. The minimum with a more preferable average particle diameter of the said polyimide particle is 0.5 micrometer, and a more preferable upper limit is 20 micrometers.

  The polyimide particles are preferably surface-treated. Surface treatment can suppress the thickening of the curable resin composition, and can add a large amount of the above polyimide particles while ensuring fluidity and wettability, reducing the linear expansion coefficient and elastic modulus of the cured product of the adhesive layer Effect can be further enhanced.

  The method for surface-treating the polyimide particles is not particularly limited, and examples thereof include a method for surface-treating using a silane coupling agent.

  The surface treatment method using the silane coupling agent is not particularly limited. For example, a method of reacting a functional group present on the surface of the polyimide particle with the silane coupling agent, and a coating layer on the surface of the polyimide particle. Examples thereof include a method of reacting a functional group present on the surface of the coating layer with a silane coupling agent after the formation.

  The method for forming the coating layer is not particularly limited, and examples thereof include a method of physically adsorbing polyvinyl alcohol.

  The method for producing the polyimide particles is not particularly limited. For example, a mixed solution is prepared by preparing a tetracarboxylic anhydride-containing solution and a diamine compound-containing solution, mixing these solutions, and performing ultrasonic stirring. After precipitating the polyamic acid particles from, the resulting polyamic acid particles are imidized to form polyimide particles, and if necessary, the obtained polyimide particles are subjected to the above-described surface treatment. It is done. According to this method, fine polyimide particles can be obtained by ultrasonic stirring.

  Moreover, as a method for producing the polyimide particles, for example, a diamine compound that forms an imide structure that is soluble in a reaction solvent, a diamine compound that forms an imide structure that is insoluble in a reaction solvent, and a functional group such as an amino group. A polyamic acid varnish is prepared by reacting the diamine mixture with tetracarboxylic anhydride in a reaction solvent using a diamine mixture containing a diamine compound that forms an imide structure having a group. The method of performing the above surface treatment with respect to the obtained polyimide particle as needed after depositing a polyimide particle from the reaction solvent by heating is also mentioned. According to this method, the polyimide particle which has a desired average particle diameter can be obtained by adjustment of the compounding ratio of the diamine compound in a diamine mixture.

  The surface treatment of the polyimide particles is also possible by improving the method for producing the polyimide particles. For example, polyimide particles having an amino group on the surface when two kinds of raw materials, the tetracarboxylic anhydride and the diamine compound, are combined with a trivalent amine such as 2,4,6-triaminopyridine. Can be obtained. It is also possible to cause the amino group to react with a functional compound having a glycidyl group, a carboxyl group or the like to secondary-modify the surface.

  As a commercial item of the said polyimide particle, UIP-S, UIP-R, etc. (all are Ube Industries make) are mentioned, for example.

  In the curable resin composition, the content of the polyimide particles is not particularly limited. The minimum with preferable content of the said polyimide particle with respect to 100 weight part of said curable compounds is 5 weight part, and a preferable upper limit is 900 weight part. When the content of the polyimide particles is 5 parts by weight or more, the addition effect of the polyimide particles can be sufficiently obtained, and the cured product of the obtained adhesive layer has a sufficiently low linear expansion coefficient and elastic modulus. To have. When the content of the polyimide particles is 900 parts by weight or less, the fluidity of the resulting curable resin composition becomes appropriate, and sufficient wettability can be secured.

  The more preferable lower limit of the content of the polyimide particles with respect to 100 parts by weight of the curable compound is 50 parts by weight, the more preferable upper limit is 700 parts by weight, the still more preferable lower limit is 100 parts by weight, and the more preferable upper limit is 500 parts by weight.

  The thickness of the adhesive layer 3 is not particularly limited. The thickness of the adhesive layer 3 is preferably in the range of 1 to 100 μm. A more preferable lower limit of the thickness of the adhesive layer 3 is 3 μm, and a more preferable upper limit is 60 μm. When the thickness of the adhesive layer 3 is within the above range, the semiconductor chip can be more easily attached on the substrate or the like via the adhesive layer 3, or the semiconductor device can be made thinner. it can.

(Dicing layer 5)
The dicing layer 5 is a dicing film, for example. The dicing layer 5 is not particularly limited. As the material constituting the dicing layer 5, polyester resins such as polyethylene terephthalate resin, polytetrafluoroethylene resins, polyethylene resins, polypropylene resins, polymethylpentene resins, polyolefin resins such as polyvinyl acetate resins, polyvinyl chloride resins, Examples thereof include plastic resins such as polyimide resins. Of these, polyolefin resin is suitably used because of its excellent expandability and low environmental impact.

  The thickness of the dicing layer 5 is not particularly limited. The thickness of the dicing layer 5 is preferably in the range of 10 to 200 μm. A more preferable lower limit of the thickness of the dicing layer 5 is 60 μm, and a more preferable upper limit is 150 μm. When the thickness of the dicing layer 5 is within the above range, the peelability of the release layer 2 and the expandability of the dicing layer 5 can be further enhanced.

(Release layer 2)
The release layer 2 is, for example, a release film. The release layer 2 is used to protect the surface 3a to which the semiconductor wafer of the adhesive layer 3 is attached. Note that the release layer 2 is not necessarily used.

  Materials constituting the release layer 2 include polyester resins such as polyethylene terephthalate resin, polytetrafluoroethylene resins, polyethylene resins, polypropylene resins, polymethylpentene resins, polyolefin resins such as polyvinyl acetate resins, and polyvinyl chloride resins. And plastic resins such as polyimide resins.

  The surface of the release layer 2 may be subjected to a release treatment using a silicone release agent, a release agent having a long chain alkyl group, or the like. The material constituting the release layer 2 is preferably a synthetic resin such as polyethylene phthalate resin. The release layer 2 formed using a synthetic resin resin is excellent in smoothness and thickness accuracy.

  The release layer may be a single layer or a plurality of layers. In the case of a plurality of layers, each layer may be formed of different resins.

  In order to further improve the handleability or peelability of the release layer 2, the thickness of the release layer 2 is preferably in the range of 10 to 100 μm.

  FIG. 2 is a partially cutaway front sectional view of a dicing die bonding tape according to another embodiment of the present invention.

  The dicing die bonding tape 11 shown in FIG. 2 is configured in the same manner as the dicing die bonding tape 1 except that the base material layer is different. The same components as those of the dicing-die bonding tape 1 are denoted by the same reference numerals, and the description thereof is omitted.

  The dicing die bonding tape 11 includes a base material layer 12. In the central region of the base material layer 12 attached to the adhesive layer 3, the base material layer 12 has a first non-adhesive portion 12A having non-adhesiveness. The base material layer 12 has a region projecting laterally from the outer peripheral side surface 3 b of the adhesive layer 3. The base material layer 12 has an adhesive portion 12B having adhesiveness in a region projecting laterally from the outer peripheral side surface 3b of the adhesive layer 3 and in an outer portion region of the non-adhesive portion 12. . Furthermore, the base material layer 12 has a second non-adhesive portion 12C in a region outside the adhesive portion 12B. In a plan view, the base material layer 12 has a first non-adhesive part 12A, an adhesive part 12B, and a second non-adhesive part 12C from the center part to the end part.

  At the time of dicing, a dicing ring is attached to the adhesive portion 12B.

  Next, an example of a method for manufacturing a semiconductor chip when the above-described dicing die bonding tape 1 is used will be described with reference to FIGS.

  First, the dicing die bonding tape 1 and the semiconductor wafer 21 described above are prepared.

  As shown in FIG. 3, the planar shape of the semiconductor wafer 21 is circular. On the surface 21 a of the semiconductor wafer 21, circuits for forming individual semiconductor chips are formed in each region partitioned in a matrix by streets.

  As shown in FIG. 4, the semiconductor wafer 21 is turned over, and the semiconductor wafer 21 turned over is placed on the stage 22. That is, the semiconductor wafer 21 is placed on the stage 22 from the surface 21a side. An annular dicing ring 23 is provided on the stage 22 at a position spaced apart from the outer peripheral side surface 21 c of the semiconductor wafer 21.

  Next, the semiconductor wafer 21 is attached to the surface 3 a of the adhesive layer 3 of the dicing die bonding tape 1. FIG. 5 is a front sectional view showing a state when the semiconductor wafer 21 is attached to the adhesive layer 3.

  The base material layer 4 has a pressure-sensitive adhesive portion 4 </ b> B in the region of the outer portion that projects outward from the outer peripheral side surface 3 b of the adhesive layer 3. As shown in FIG. 5, the release layer 2 of the dicing die bonding tape 1 is peeled off to expose the surface 3 a of the adhesive layer 3 and the adhesive portion 4 </ b> B of the base material layer 4.

  After the release layer 2 is peeled off or while the release layer 2 is peeled off, the exposed adhesive portion 4B is pasted on the dicing ring 23. Further, the exposed adhesive layer 3 is attached to the back surface 21 b of the semiconductor wafer 21.

  As described above, a laminate including the dicing die bonding tape 1 and the semiconductor wafer 21 is obtained.

  FIG. 6 is a front sectional view showing a state where the semiconductor wafer 21 is attached to the adhesive layer 3.

  The adhesive layer 3 is attached to the entire back surface 21 b of the semiconductor wafer 21. A region of the outer portion of the base material layer 4 that protrudes outward from the outer peripheral side surface 3 b of the adhesive layer 3 is supported by the dicing ring 23 so that an extra force is not applied to the semiconductor wafer 21.

  Next, the semiconductor wafer 21 with the adhesive layer 3 attached is taken out of the stage 22 and turned over. At this time, the dicing ring 23 is taken out in a state of being attached to the base material layer 4.

  As shown in FIG. 7, the extracted semiconductor wafer 21 is turned over so that the surface 21 a faces upward, and is placed on another stage 24. Next, as shown by an arrow X in FIG. 7, the semiconductor wafer 21 is diced together with the adhesive layer 3 and divided into individual semiconductor chips.

  As shown in FIG. 8, after dicing, the semiconductor wafer 21 and the adhesive layer 3 are each cut so as to penetrate both surfaces. A cut surface 31 is formed on the adhesive layer 3 and the base material layer 4. Dicing is not particularly limited as long as it is performed so as to penetrate the semiconductor wafer 21 and the adhesive layer 3. For example, a dicing blade may be inserted so as to reach a position deeper than the interface between the adhesive layer 3 and the base material layer 4, and a cut may be formed in the base material layer 4. In the case where the dicing blade is inserted so as to reach a position deeper than the interface between the adhesive layer 3 and the base material layer 4, it is preferable not to divide the base material layer 4 in order to improve pickup properties.

  Examples of the method for dicing the semiconductor wafer 21 include a method using a dicing blade, a method of laser dicing, and the like.

  In the present embodiment, the central region 4A having non-adhesiveness of the base material layer 4 is hardened, so that it is difficult to react by irradiation with laser light. For this reason, the base material layer 4 is hardly fused to the adhesive layer 3. Therefore, even when dicing using laser light is performed, the semiconductor chip can be picked up without difficulty.

  After the semiconductor wafer is diced and divided into individual semiconductor chips, the dicing layer is extended to extend the interval between the divided individual semiconductor chips. Thereafter, the adhesive layer 3 to which the semiconductor chip is attached is peeled off from the non-adhesive portion 4A of the base material layer 4 and taken out. In this way, a semiconductor chip with the adhesive layer 3 can be obtained.

  It is preferable to take out the semiconductor chip after dicing without changing the peeling force between the adhesive layer 3 and the non-adhesive portion 4A. The non-adhesive part 4A attached to the adhesive layer 3 of the base material layer 4 has non-adhesiveness. Therefore, the semiconductor chip with the adhesive layer 3 can be taken out without difficulty after dicing without changing the peeling force.

  Hereinafter, the present invention will be specifically described by giving examples and comparative examples. The present invention is not limited to the following examples.

(Acrylic polymer 1)
95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution) as a photo radical generator, and 0.01 parts by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Further, 3.5 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer (acrylic polymer 1). Obtained. The obtained acrylic polymer 1 had a weight average molecular weight of 700,000 and an acid value of 0.86 (mgKOH / g).

  Moreover, the following compounds were prepared as a material which comprises the composition for forming a base material layer.

(Photopolymerization initiator)
Irgacure 651 (Ciba Japan)

(Oligomer)
U324A: manufactured by Shin-Nakamura Chemical Co., Ltd., urethane acrylic oligomer (10 functional urethane acrylic oligomer), weight average molecular weight: 1,300

(Crosslinking agent)
Coronate L-45: Nippon Polyurethane Industry Co., Ltd., isocyanate-based crosslinking agent

(Dicing layer)
A polyethylene film as a dicing layer having a thickness of 100 μm was manufactured by a T-die method using polyethylene (manufactured by Prime Polymer Co., Ltd., M12) as a raw material.

Example 1
100 parts by weight of the acrylic polymer 1, 1 part by weight of Irgacure 651, 15 parts by weight of U324A as a urethane acrylic oligomer, and 1 part by weight of Coronate L-45 were blended to obtain an adhesive composition. . The obtained pressure-sensitive adhesive composition was coated on a release PET film, dried at 110 ° C. for 5 minutes, the solvent was removed, and a composition layer was formed.

  The surface on which the base material layer of the polyethylene film as the dicing layer was laminated was mirror-finished and corona treated. The polyethylene film was affixed on the surface of the composition layer opposite to the surface on which the release PET film was affixed. Thereafter, it was stored at 40 ° C. for 24 hours.

Next, using a mercury lamp so as to form a circular shape with a diameter of 306.8 mm in the center region of the obtained composition layer, the composition layer is cured by irradiating light with an energy of 2000 mJ / cm ^2. It was. Thus, the base material layer (thickness 0.02 mm) which has a non-adhesion part in the center area | region and has an adhesion part in the area | region of the outer part of this non-adhesion part was obtained.

  Thus, the laminated body by which the mold release PET film, the base material layer, and the dicing layer were laminated | stacked in this order was obtained.

  Using the obtained laminate, a dicing-die bonding tape was produced as follows.

  15 parts by weight of G-2050M (manufactured by NOF Corporation, epoxy-containing acrylic polymer, weight average molecular weight Mw 200,000), 70 parts by weight of EXA-7200HH (manufactured by DIC, dicyclopentadiene type epoxy), and HP-4032D (DIC Corporation) Manufactured, naphthalene type epoxy) 15 parts by weight, YH-309 (Japan Epoxy Resin, acid anhydride curing agent) 38 parts by weight, 2 MAOK-PW (Shikoku Chemicals, imidazole) 8 parts by weight, S320 2 parts by weight (manufactured by Chisso Corporation, aminosilane) and 4 parts by weight of MT-10 (manufactured by Tokuyama Corporation, surface hydrophobized fumed silica) were blended to obtain a blend A. The obtained formulation A was added to methyl ethyl ketone (MEK) as a solvent so as to have a solid content of 60% by weight and stirred to obtain a coating solution. The obtained coating liquid was applied on a release PET film so as to have a thickness of 40 μm, and dried by heating in an oven at 110 ° C. for 3 minutes. Then, it processed so that an adhesive layer might become a circle with a diameter of 305.8 mm, and the adhesive layer was formed on the mold release PET film.

  The release PET film of the laminate is peeled off, and the non-adhesive part of the laminate is laminated at 60 ° C. on the surface opposite to the surface on which the release PET film of the adhesive layer is laminated. Got the body. Thereafter, the base material layer and the dicing layer were cut out in a circular shape so as to have a diameter larger than the diameter of the adhesive layer and to a size capable of attaching the dicing ring. In this way, a dicing die bonding tape having a four-layer laminated structure in which a release film / adhesive layer / base material layer / dicing layer was laminated in this order was produced.

  In the obtained dicing die-bonding tape, the non-adhesive part was larger than the adhesive layer, and the non-adhesive part had a region protruding outward from the outer peripheral side surface of the adhesive layer.

(Examples 2-7 and Comparative Examples 1-3)
A dicing die bonding tape was produced in the same manner as in Example 1 except that the sizes of the adhesive layer and the non-adhesive part were changed as shown in Table 1 below.

(Example 8)
25 parts by weight of G-2050M (manufactured by NOF Corporation, epoxy-containing acrylic polymer, weight average molecular weight Mw 200,000) and 75 parts by weight of EXA-7200HH (manufactured by DIC, dicyclopentadiene type epoxy) 15 parts by weight of EPR-4023 (manufactured by ADEKA, CTBN-modified epoxy), 30 parts by weight of YH-309 (manufactured by Japan Epoxy Resin, acid anhydride curing agent), and 2MAOK-PW (manufactured by Shikoku Kasei Co., Ltd., imidazole) 5 parts by weight, 1 part by weight of KBM-573 (manufactured by Shin-Etsu Chemical Co., Ltd., aminosilane coupling agent), 4 parts by weight of MT-10 (manufactured by Tokuyama, surface hydrophobized fumed silica), and UIP-S (Ube Industries) Except for changing to Formulation B containing 150 parts by weight of polyimide particles (manufactured by Kogyo Co., Ltd.), release film / adhesive contact in the same manner as in Example 1. To prepare a die bonding tape - adhesive layer / substrate layer / dicing layer dicing having a laminated structure of four layers, which are laminated in this order.

(Evaluation)
(1) Peeling force and adhesive force Peeling force A between the adhesive layer and the non-adhesive part, peeling force B between the non-adhesive part and the dicing layer, adhesive force C of the non-adhesive part, and adhesive force D of the adhesive part Was measured by the method described above. As a measuring device, AGS-100D manufactured by Shimadzu Corporation was used.

(2) Wafer bonding property The release film of the dicing die bonding tape was peeled from the adhesive layer to expose the adhesive layer. The exposed adhesive layer was laminated on one side of a 304.8 mm (12 inch) diameter silicon wafer (80 μm thick) at a temperature of 60 ° C. In addition, a dicing ring was attached to the adhesive portion of the base material layer to obtain an evaluation sample.

  The edge part of the said evaluation sample (laminated body) which affixed the semiconductor wafer was observed with Keyence Corporation digital microscope VHX100S, and wafer bonding property was evaluated on the following evaluation criteria.

[Evaluation criteria for wafer bonding]
◎: Adhesive layer and non-adhesive layer are clearly present on the wafer-bonded portion ○: Adhesive layer and non-adhesive layer are present on the wafer-bonded portion ×: Wafer-bonded portion Has no adhesive layer and non-adhesive layer

(3) Machinability Using the dicing apparatus DFD651 (manufactured by Disco), the evaluation sample obtained by the evaluation of (2) wafer bonding property was diced into a chip size of 10 mm × 10 mm at a feed rate of 50 mm / sec. . The machinability during dicing was evaluated according to the following evaluation criteria.

[Evaluation criteria for machinability]
○: No chip jump or crack ×: Any chip jump or crack

(4) Pickup property After dicing, using a die bonder best D-02 (made by Canon Machinery Co., Ltd.), continuous semiconductor chips divided under the conditions of a collet size of 8 mm square, a push-up speed of 5 mm / second, and a pickup temperature of 23 ° C. Picked up. The pickup property during pickup was evaluated according to the following evaluation criteria.

[Evaluation criteria for pickup properties]
○: The ratio of the number of semiconductor chips that could not be picked up is 1% or less. Δ: The ratio of the number of semiconductor chips that could not be picked up exceeded 1% and less than 2%. 2% or more

  The results are shown in Table 1 below.

DESCRIPTION OF SYMBOLS 1 ... Dicing die bonding tape 2 ... Release layer 2a ... Upper surface 3 ... Adhesive bond layer 3a ... Surface 3b ... Outer peripheral side surface 4 ... Base material layer 4a ... One side 4b ... Other side 4A ... Non-adhesive part 4B ... Adhesive part 5 ... Dicing layer 6,7 ... Protective sheet 11 ... Dicing die bonding tape 12 ... Base layer 12A ... First non-adhesive part 12B ... Adhesive part 12C ... Second non-adhesive part 21 ... Semiconductor wafer 21a ... front surface 21b ... back surface 21c ... outer peripheral side surface 22 ... stage 23 ... dicing ring 24 ... stage 31 ... cut surface

Claims (9)

A non-adhesive part, and a base material layer having an adhesive part in a region outside the non-adhesive part;
An adhesive layer laminated on one surface of the base material layer,
The non-adhesive part is larger than the adhesive layer, the non-adhesive part has a region projecting outside the outer peripheral side surface of the adhesive layer, and
The said adhesive layer is a dicing die bonding tape larger than the semiconductor wafer affixed on this adhesive layer.   The dicing die-bonding tape according to claim 1, wherein the base material layer is formed of a crosslinked body obtained by crosslinking a composition containing an acrylic polymer.   The dicing die bonding tape according to claim 2, wherein the composition further comprises an oligomer having a double bond capable of reacting with an acrylic group and having a weight average molecular weight in the range of 100 to 50,000.   The dicing die-bonding tape of any one of Claims 1-3 in which the said adhesive layer is formed of the curable resin composition containing a curable compound, a hardening | curing agent, and a polyimide particle.   The dicing die-bonding tape according to any one of claims 1 to 4, wherein the curable compound is an epoxy resin, and the curing agent is an epoxy resin curing agent.   The dicing die-bonding tape of any one of Claims 1-5 further provided with the dicing layer laminated | stacked on the other surface of the said base material layer. It is a manufacturing method of the dicing die-bonding tape of any one of Claims 1-6,
The non-adhesive part and the non-adhesive part are formed by irradiating an active energy ray to a part of the base material layer that forms the non-adhesive part of the adhesive composition layer for forming the base material layer. Obtaining a base material layer having an adhesive part in the region of the outer part of the part;
The manufacturing method of a dicing die-bonding tape provided with the process of laminating | stacking an adhesive layer on one side of the said composition layer or the said base material layer before or after the process of obtaining the said base material layer. The said adhesive layer of the dicing die-bonding tape of any one of Claims 1-6 so that the said adhesive layer may have the area | region projected outside the outer peripheral side surface of the semiconductor wafer. A step of attaching a semiconductor wafer smaller than the adhesive layer to the surface opposite to the surface on which the base material layer is laminated,
A step of attaching a dicing ring to the adhesive portion of the base material layer;
Dicing the semiconductor wafer together with the adhesive layer, and dividing into individual semiconductor chips,
A method of manufacturing a semiconductor chip, comprising: after dicing, peeling the adhesive layer to which the semiconductor chip is attached from the base material layer, and taking out the semiconductor chip together with the adhesive layer.   The method of manufacturing a semiconductor chip according to claim 8, wherein the semiconductor chip is taken out without changing a peeling force between the adhesive layer and the base material layer after dicing.

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