JP2006323481A - Manufacturing method of semiconductor device - Google Patents
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Abstract
Description
本発明は、ICカード等の半導体装置の製造方法に関する。 The present invention relates to a method for manufacturing a semiconductor device such as an IC card.
近年、半導体素子を組み込んだICカードやICタグが急速に普及している。ICカードは、例えば、プリペイド機能を有する定期券、プリペイドカード、電子キー機能を有する身分証明証等に利用されている。また、ICタグは、例えば、各種物品に付けられるバーコードに代わる電子識別標識等に利用されている。 In recent years, IC cards and IC tags incorporating semiconductor elements are rapidly spreading. The IC card is used for, for example, a commuter pass having a prepaid function, a prepaid card, an identification card having an electronic key function, and the like. In addition, the IC tag is used, for example, as an electronic identification sign that replaces a barcode attached to various articles.
これらICカード等の製造方法としては、第1の基板と第2の基板との間に、ICチップ及びアンテナを含む部品からなるICインレットを介在させて接着剤により貼合せる接着剤貼合法(例えば、特許文献1参照。)、基材部にICモジュールを固定し、その上にICモジュールを覆うIC保護層を配設し、このIC保護層の上に射出成形により射出成形層を形成する射出成形法(例えば、特許文献2参照。)等が用いられている。ここで、ICカード等の製造方法として主流となっている従来の接着剤貼合法について、図面を用いて説明する。 As a manufacturing method of these IC cards and the like, an adhesive bonding method (for example, an adhesive is applied by interposing an IC inlet composed of components including an IC chip and an antenna between a first substrate and a second substrate) , See Patent Document 1.) An IC module is fixed to a base material part, an IC protective layer covering the IC module is disposed thereon, and an injection molding layer is formed on the IC protective layer by injection molding. A molding method (see, for example, Patent Document 2) is used. Here, the conventional adhesive bonding method which is the mainstream as a manufacturing method for IC cards and the like will be described with reference to the drawings.
図4は、従来の接着剤貼合法によりICカードを製造する工程を示す工程図であり、ハッチング部分のみが断面を示す。先ず、図4Aに示すように、位置合わせ用の認識マーク101が表示された基板102の上部に第1の接着剤103を部分的に塗布する。この際、第1の接着剤103は、通常不透明な接着剤が用いられているため、認識マーク101を覆わないように基板102の一部に塗布する。次に、図4Bに示すように、第1の接着剤103の上にICチップ104を載置する。次に、図4Cに示すように、基板102の全面を覆うように第2の接着剤105を塗布する。次に、図4Dに示すように、第2の接着剤105の上に保護層106を配置する。最後に、保護層106を基板102側に押圧して加熱することにより、図4Eに示すICカード107が製造される。
前述のICカードやICチップを今後さらに普及させるためには、低コストでの大量生産を可能にする生産技術の開発が課題となる。しかし、上記従来の接着剤貼合法では、第1の接着剤103を塗布した後、さらに第2の接着剤105を塗布する必要があり、多数の工程を必要とする。また、一枚の基板ごとに半導体素子を1個ずつ搭載する必要があり、作業が煩雑となる。このため、上記従来の接着剤貼合法では、低コストでの大量生産は困難であった。
In order to further spread the aforementioned IC cards and IC chips in the future, the development of production technology that enables mass production at a low cost becomes an issue. However, in the conventional adhesive bonding method, it is necessary to apply the
本発明は上記問題を解決したもので、低コストでの大量生産が可能なICカード等の半導体装置の製造方法を提供する。 The present invention solves the above problems and provides a method of manufacturing a semiconductor device such as an IC card that can be mass-produced at a low cost.
本発明の半導体装置の製造方法は、位置合わせ用の認識マークが表示された基板の一方の主面全体に、前記認識マークが透視可能な接着層を形成する第1の工程と、前記接着層の上に、前記認識マークを基準に位置合わせして半導体素子を載置する第2の工程と、前記半導体素子が載置された前記接着層の全面を覆うように保護層を形成する第3の工程と、前記基板と前記保護層とを前記接着層を介して接合する第4の工程とを含むことを特徴とする。 The method for manufacturing a semiconductor device of the present invention includes a first step of forming an adhesive layer through which the recognition mark can be seen through on the entire main surface of the substrate on which the recognition mark for alignment is displayed, and the adhesive layer. A second step of placing the semiconductor element on the basis of the recognition mark as a reference, and a third step of forming a protective layer so as to cover the entire surface of the adhesive layer on which the semiconductor element is placed. And a fourth step of bonding the substrate and the protective layer through the adhesive layer.
本発明により、接着層を1層のみ形成するだけで、基板と保護層との間に半導体素子を配置した半導体装置を製造でき、また、1つの基板に複数の半導体素子を配置して複数の半導体装置を一度に製造できる。このため、低コストでの大量生産が可能な半導体装置の製造方法を提供できる。 According to the present invention, a semiconductor device in which a semiconductor element is disposed between a substrate and a protective layer can be manufactured by forming only one adhesive layer, and a plurality of semiconductor elements are disposed on one substrate. A semiconductor device can be manufactured at a time. For this reason, the manufacturing method of the semiconductor device which can be mass-produced at low cost can be provided.
本発明の半導体装置の製造方法の一例は、位置合わせ用の認識マークが表示された基板の一方の主面全体に、認識マークが透視可能な接着層を形成する第1の工程と、接着層の上に、認識マークを基準に位置合わせして半導体素子を載置する第2の工程と、半導体素子が載置された前記接着層の全面を覆うように保護層を形成する第3の工程と、基板と保護層とを接着層を介して接合する第4の工程とを含む。 An example of the method for manufacturing a semiconductor device of the present invention includes a first step of forming an adhesive layer through which the recognition mark can be seen through on the entire main surface of the substrate on which the recognition mark for alignment is displayed, and the adhesive layer. And a second step of placing the semiconductor element with the recognition mark as a reference, and a third step of forming a protective layer so as to cover the entire surface of the adhesive layer on which the semiconductor element is placed. And a fourth step of joining the substrate and the protective layer through the adhesive layer.
接着層を通して認識マークが透視可能であるため、認識マークの上にも接着層を形成でき、基板の全面に一度に接着層を形成できる。このため、基板と半導体素子との接合及び基板と保護層との接合を1つの接着層で行うことができ、製造工程を簡略化できる。 Since the recognition mark can be seen through the adhesive layer, the adhesive layer can be formed on the recognition mark, and the adhesive layer can be formed on the entire surface of the substrate at once. Therefore, the bonding between the substrate and the semiconductor element and the bonding between the substrate and the protective layer can be performed with one adhesive layer, and the manufacturing process can be simplified.
ここで、透視可能とは、接着層が完全に無色透明である場合だけではなく、有色透明、半透明等であっても、接着層を通して認識マークが確認できる状態であれば全て含まれる。 Here, the term “perspectively visible” includes not only a case where the adhesive layer is completely colorless and transparent, but also a colored transparent, semi-transparent and the like as long as the recognition mark can be confirmed through the adhesive layer.
また、接着層は、熱硬化性樹脂を含み、接着層を加熱して硬化させることにより、基板と保護層とを接合することが好ましい。熱硬化性樹脂を用いた加熱硬化による接合は、接合信頼性が高く、接合作業も合理的に行えるからである。 Moreover, it is preferable that a contact bonding layer contains a thermosetting resin and joins a board | substrate and a protective layer by heating and hardening an contact bonding layer. This is because bonding by heat curing using a thermosetting resin has high bonding reliability and can perform a bonding operation reasonably.
さらに、接着層が熱硬化性樹脂を含む場合、半導体素子を加熱した後に接着層の上に載置することにより、半導体素子の少なくとも下部に位置する接着層を加熱して硬化させ、半導体素子を基板上に固定し、その後、未硬化の接着層を加熱して硬化させることにより、基板と保護層とを接合することが好ましい。半導体素子を基板上に予め固定することにより、その後の作業性が向上するからである。 Further, when the adhesive layer includes a thermosetting resin, the adhesive layer located at least below the semiconductor element is heated and cured by placing the semiconductor element on the adhesive layer after heating, and the semiconductor element It is preferable to bond the substrate and the protective layer by fixing on the substrate and then curing the uncured adhesive layer by heating. This is because the workability thereafter is improved by fixing the semiconductor element on the substrate in advance.
また、半導体素子を接着層の上に複数載置し、その後、基板と保護層とを接着層を介して接合し、基板と保護層との間に複数の半導体素子が配置された半導体装置前駆体を形成し、その後、半導体装置前駆体を、半導体素子が少なくとも1個含まれるように個片に切断することが好ましい。これにより、一枚の基板から複数の半導体装置の製造が可能となり、低コストでの大量生産がより確実に行えるからである。 In addition, a semiconductor device precursor in which a plurality of semiconductor elements are placed on an adhesive layer, and then the substrate and the protective layer are bonded via the adhesive layer, and the plurality of semiconductor elements are disposed between the substrate and the protective layer. It is preferable to form a body and then cut the semiconductor device precursor into pieces so that at least one semiconductor element is included. This is because a plurality of semiconductor devices can be manufactured from a single substrate, and mass production at low cost can be performed more reliably.
また、剥離層と保護層とからなる2層フィルムを、保護層が接着層に対向するように配置し、2層フィルムを接着層に対して押圧することにより、保護層を接着層上に配置した後、保護層と剥離層とを分離することが好ましい。2層フィルムを用いることにより、プレス等で押圧しても、プレスから保護層を容易に分離でき、基板や半導体素子に応力が加わることなく保護層を形成できるからである。 Also, a two-layer film composed of a release layer and a protective layer is disposed so that the protective layer faces the adhesive layer, and the protective layer is disposed on the adhesive layer by pressing the two-layer film against the adhesive layer. Then, it is preferable to separate the protective layer and the release layer. By using a two-layer film, the protective layer can be easily separated from the press even when pressed with a press or the like, and the protective layer can be formed without applying stress to the substrate or the semiconductor element.
また、上記接着層は、フィルム状接着剤から形成することができる。フィルム状接着剤は、連続的な供給が可能であり、連続生産による大量生産が可能となる。 The adhesive layer can be formed from a film adhesive. The film adhesive can be continuously supplied and can be mass-produced by continuous production.
また、上記接着層は、液状接着剤から形成することができる。液状接着剤は、ロールコータによる塗布が可能であり、接着剤の塗布工程を合理的に行うことができる。 The adhesive layer can be formed from a liquid adhesive. The liquid adhesive can be applied by a roll coater, and the adhesive application process can be performed rationally.
また、上記接着層は、ナノ粒子フィラーを含む透明性接着剤から形成されていることが好ましい。ナノ粒子フィラーを含むことにより、接着層の透明性を維持しつつ、接着層の耐熱性及び耐浸水性を向上できるからである。 Moreover, it is preferable that the said contact bonding layer is formed from the transparent adhesive agent containing a nanoparticle filler. This is because inclusion of the nanoparticle filler can improve the heat resistance and water resistance of the adhesive layer while maintaining the transparency of the adhesive layer.
また、上記保護層は、熱可塑性樹脂フィルムから形成されていることが好ましい。保護層を予めフィルムとして形成することにより、保護層の取扱いを合理的に行え、また、熱可塑性樹脂を用いることにより、接着層の加熱の際の熱により熱可塑性樹脂が軟化するため、基板と熱可塑性樹脂フィルムとの接合がより強固に行えるからである。 Moreover, it is preferable that the said protective layer is formed from the thermoplastic resin film. By forming the protective layer as a film in advance, the protective layer can be handled rationally, and by using the thermoplastic resin, the thermoplastic resin softens due to the heat when the adhesive layer is heated. It is because joining with a thermoplastic resin film can be performed more firmly.
次に、本発明の実施の形態を図面に基づき説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
(実施形態1)
図1は、本発明の半導体装置の製造工程の一例を示す工程図であり、ハッチング部分のみが断面を示す。先ず、図1Aに示すように、位置合わせ用の認識マーク11が表示された基板12の一方の主面全体に、認識マーク11が透視可能な接着層13を形成する。接着層13を認識マーク11が透視可能な材料で形成することにより、基板12の全面に接着層13を形成しても認識マーク11を認識できる。
(Embodiment 1)
FIG. 1 is a process diagram showing an example of a manufacturing process of a semiconductor device of the present invention, and only a hatched portion shows a cross section. First, as shown in FIG. 1A, an
接着層13は、熱硬化性樹脂の主剤及び硬化剤を含んでいるフィルム状接着剤又は液状接着剤から形成することができる。接着層13の厚さは、後述する半導体素子の厚さによって異なるが、例えば、0.05mm〜0.3mmである。
The
上記熱硬化性樹脂の主剤は、認識マーク11が透視可能な材料であれば特に限定されないが、接合信頼性の点でエポキシ樹脂が好ましい。上記エポキシ樹脂としては、例えば、固形タイプ又は液状タイプの、ビスフェノールA型エポキシ、ビスフェノールF型エポキシ、ナフタレン型エポキシ、臭素化エポキシ、フェノールノボラック型エポキシ、クレゾールノボラック型エポキシ、ビフェニル型エポキシ等を用いることができる。
The main component of the thermosetting resin is not particularly limited as long as the
上記熱硬化性樹脂の硬化剤としては、例えば、酸無水物硬化剤、アミン系硬化剤、フェノール系硬化剤等を用いることができる。酸無水物硬化剤としては、例えば、3,4−ジメチル−6−(2−メチル−1−プロペニル)−4−シクロヘキセン−1,2−ジカルボン酸無水物、メチルテトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、無水メチルハイミック酸、ヘキサヒドロ無水フタル酸、トリアルキルテトラヒドロ無水フタル酸、テトラヒドロ無水フタル酸、メチルシクロヘキセンジカルボン酸、無水ナジック酸等を用いることができる。アミン系硬化剤としては、例えば、ジエチレントリアミン、トリエチレンテトラミン、メンセンジアミン、イソホロンジアミン、メタキシレンジアミン、ジアミノジフェニルメタン、メタフェニレンジアミン、ジアミノジフェニルスルフォン等を用いることができる。フェノール系硬化剤としては、例えば、フェノールノボラック系、パラキシリレン変性フェノール系、ジシクロペンタジエン変性フェノール系等を用いることができる。 As the curing agent for the thermosetting resin, for example, an acid anhydride curing agent, an amine curing agent, a phenol curing agent, or the like can be used. Examples of the acid anhydride curing agent include 3,4-dimethyl-6- (2-methyl-1-propenyl) -4-cyclohexene-1,2-dicarboxylic acid anhydride, methyltetrahydrophthalic anhydride, methylhexahydro Phthalic anhydride, methyl hymic anhydride, hexahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, tetrahydrophthalic anhydride, methylcyclohexene dicarboxylic acid, nadic anhydride and the like can be used. As the amine-based curing agent, for example, diethylenetriamine, triethylenetetramine, mensendiamine, isophoronediamine, metaxylenediamine, diaminodiphenylmethane, metaphenylenediamine, diaminodiphenylsulfone and the like can be used. As a phenol type hardening | curing agent, a phenol novolak type, a paraxylylene modified phenol type, a dicyclopentadiene modified phenol type etc. can be used, for example.
また、熱硬化性樹脂は、ナノ粒子フィラーをさらに含むことが好ましい。これにより、接着層13の透明性を維持しつつ、接着層13の耐熱性及び耐浸水性を向上できるからである。ナノ粒子フィラーとしては、粒子径が40nm以下のシリカ粉末、アルミナ粉末などを用いることができる。この粒子径以下であれば、光の散乱を阻害しないため、透明性の低下がないからである。ナノ粒子フィラーの添加量は、特に制限はない。
Moreover, it is preferable that a thermosetting resin further contains a nanoparticle filler. This is because the heat resistance and water resistance of the
また、基板12は、リジット基板としてはセラミック基板、ガラスエポキシ基板等を用いることができ、フレキシブル基板としてはポリエチレンテレフタレート(PET)基板、ポリイミド(PI)基板等を用いることができる。基板12の厚さは特に限定されないが、通常0.1mm〜1mmである。
The
次に、図1Bに示すように、接着層13の上に、認識マーク11を基準に位置合わせして半導体素子14を載置する。この際、半導体素子14を予め加熱しておくと、半導体素子14の下部に位置する接着層13が一部硬化して、半導体素子14を仮固定することができる。半導体素子14の大きさ、種類は特に限定されないが、例えば、縦1.0mm〜2.0mm、横1.5mm〜3.0mm、厚さ0.1mm〜0.3mmのICチップ等が該当する。
Next, as shown in FIG. 1B, the
次に、図1Cに示すように、半導体素子14が載置された接着層13の全面を覆うように保護層15を配置する。保護層15は、熱可塑性樹脂フィルムから形成することができる。熱可塑性樹脂フィルムとしては、例えば、アクリル樹脂、ポリエーテルサルホン、ポリエステル樹脂、エチレン酢酸ビニル共重合体、エチレンアクリレート共重合体、ポリアミド樹脂、ブタジエンゴム/スチレン共重合体、フェノキシ樹脂、又はこれらの混合物等からなるフィルムを用いることができる。保護層15の厚さは特に限定されないが、例えば、0.1mm〜1mmである。
Next, as shown in FIG. 1C, a
最後に、プレス(図示せず。)を用いて保護層15を加熱しながら基板12側に押圧する。これにより、接着層13内に半導体素子14が埋設されるとともに、接着層13も加熱されて硬化し、基板12と保護層15とが接着層13を介して接合し、図1Dに示す半導体装置16が製造される。
Finally, the
(実施形態2)
図2は、本発明の半導体装置の製造工程の他の一例を示す工程図であり、ハッチング部分のみが断面を示す。本実施形態は、基板上に複数の半導体素子を載置し、保護層の形成に2層フィルムを用い、最後に基板を個片に切断する点で実施形態1と相違するが、その他は実施形態1とほぼ同様である。従って、実施形態1と共通する一部の説明は省略する。
(Embodiment 2)
FIG. 2 is a process diagram showing another example of the manufacturing process of the semiconductor device of the present invention, and only the hatched portion shows a cross section. This embodiment is different from Embodiment 1 in that a plurality of semiconductor elements are placed on a substrate, a two-layer film is used for forming a protective layer, and finally the substrate is cut into individual pieces. It is almost the same as the first embodiment. Therefore, a part of the description common to the first embodiment is omitted.
先ず、図2Aに示すように、位置合わせ用の認識マーク21が表示された基板22の一方の主面全体に、認識マーク21が透視可能な接着層23を形成する。接着層23を認識マーク21が透視可能な材料で形成することにより、基板22の全面に接着層23を形成しても認識マーク21を認識できる。接着層23は、熱硬化性樹脂の主剤及び硬化剤を含んでいるフィルム状接着剤又は液状接着剤から形成することができる。
First, as shown in FIG. 2A, an
次に、図2Bに示すように、接着層23の上に、認識マーク21を基準に位置合わせして複数の半導体素子24を載置する。この際、半導体素子24を予め加熱しておくと、半導体素子24の下部に位置する接着層23が一部硬化して、半導体素子24を仮固定することができる。半導体素子24の大きさ、種類は特に限定されない。
Next, as shown in FIG. 2B, a plurality of
次に、図2Cに示すように、半導体素子24が載置された接着層23の全面を覆うように、保護層25と剥離層26とからなる2層フィルム27を、保護層25が接着層23に対向するように配置するとともに、プレス28を2層フィルム27の上に配置する。加熱プレス28は、ステンレス鋼などから形成することができる。
Next, as shown in FIG. 2C, a two-
保護層25は、熱可塑性樹脂フィルムから形成することができる。熱可塑性樹脂フィルムとしては、例えば、アクリル樹脂、ポリエーテルサルホン、ポリエステル樹脂、エチレン酢酸ビニル共重合体、エチレンアクリレート共重合体、ポリアミド樹脂、ブタジエンゴム/スチレン共重合体、フェノキシ樹脂、又はこれらの混合物等からなるフィルムを用いることができる。保護層25の厚さは特に限定されないが、例えば、0.1mm〜1mmである。また、剥離層26は、剥離性材料で形成されている。剥離性材料としては特に限定されず、無機系剥離剤及び有機系剥離剤のいずれも使用できる。剥離層26の厚さは特に限定されないが、例えば、0.1mm〜1mmである。
The
次に、図2Dに示すように、プレス28を用いて2層フィルム27を加熱しながら接着層23に対して押圧する。プレス28の温度は、接着層23の硬化温度以上に設定されている。これにより、接着層23内に半導体素子24が埋設されるとともに、接着層23も加熱されて硬化し、基板22と保護層25とが接着層23を介して接合する。
Next, as illustrated in FIG. 2D, the two-
次に、図2Eに示すように、2層フィルム27とプレス28とを持ち上げると、保護層25と剥離層26とが容易に分離される。剥離層26を備えた2層フィルム27を用いて保護層25を基板22に押圧した後に持ち上げることにより、保護層25から剥離層26をスムーズに分離できる。
Next, as shown in FIG. 2E, when the two-
最後に、図2Eに示した切断箇所a、b、cをカッター等で切断することにより、複数の半導体装置が製造される。 Finally, a plurality of semiconductor devices are manufactured by cutting the cutting portions a, b, and c shown in FIG. 2E with a cutter or the like.
なお、図3は、プレス28と2層フィルム27とを示す側面図であり、2層フィルム27は、ロール29から巻き出されてプレス28により押圧され、その後にロール30に巻き取られる。
FIG. 3 is a side view showing the
以下、実施例に基づき本発明を具体的に説明する。但し、本発明は、以下の実施例に限定されるものではない。 Hereinafter, the present invention will be specifically described based on examples. However, the present invention is not limited to the following examples.
(実施例)
下記のとおり、実施形態2と同様にして、ICカードを作製した。
(Example)
An IC card was produced in the same manner as in Embodiment 2 as described below.
先ず、位置合わせ用の認識マークが表示された基板の一方の主面全体に、ロールコータを用いて透明性の接着剤を厚さ0.1mmで塗布して接着層を形成した。この接着剤としては、主剤として大日本インキ製のビスフェノールF型エポキシ樹脂“EXA830LVP”(商品名)を100重量部、硬化剤として旭電化製のメチルテトラヒドロ無水フタル酸“KRM−291−5”(商品名)を100重量部、硬化触媒として四国化成製のイミダゾール“1M2EZ”(商品名)を1重量部及びナノ粒子フィラーとして平均粒径30nmのシリカ微粒子を40重量部、それぞれ含むエポキシ樹脂系接着剤を使用した。基板としては、縦246mm、横374mm、厚さ0.38mmのPET基板を用いた。 First, an adhesive layer was formed by applying a transparent adhesive with a thickness of 0.1 mm to one whole main surface of the substrate on which the alignment recognition mark was displayed, using a roll coater. As this adhesive, 100 parts by weight of bisphenol F type epoxy resin “EXA830LVP” (trade name) manufactured by Dainippon Ink as the main agent and methyltetrahydrophthalic anhydride “KRM-291-5” manufactured by Asahi Denka as the curing agent ( Epoxy resin adhesive containing 100 parts by weight of the product name), 1 part by weight of imidazole “1M2EZ” (trade name) made by Shikoku Kasei as the curing catalyst, and 40 parts by weight of silica fine particles having an average particle size of 30 nm as the nanoparticle filler. The agent was used. As the substrate, a PET substrate having a length of 246 mm, a width of 374 mm, and a thickness of 0.38 mm was used.
次に、上記接着層の上に、認識マークを基準に位置合わせして約200℃に加熱したICチップを16個載置して、ボンディング実装した。ICチップの大きさは、縦1.5mm、横2.1mm、厚さ0.12mmとし、ボンディング圧は、5kgf/1チップとした。 Next, 16 IC chips, which were aligned with the recognition mark as a reference and heated to about 200 ° C., were placed on the adhesive layer and mounted by bonding. The size of the IC chip was 1.5 mm in length, 2.1 mm in width, and 0.12 mm in thickness, and the bonding pressure was 5 kgf / 1 chip.
次に、ICチップが実装された基板の全面を覆うように、保護層と剥離層とからなる2層フィルムを、保護層が基板の接着層に対向するように配置するとともに、プレスを2層フィルムの上に配置した。保護層としては、スリーエム製の厚さ0.8mmのアクリル樹脂フィルムを用いた。剥離層としては、無機系剥離コーティング剤を保護層の表面に厚さ0.5mmでコーティングして用いた。プレスは、ステンレス鋼製プレスを使用した。 Next, a two-layer film composed of a protective layer and a release layer is disposed so as to cover the entire surface of the substrate on which the IC chip is mounted so that the protective layer faces the adhesive layer of the substrate, and two layers of press are applied. Placed on the film. As the protective layer, an acrylic resin film having a thickness of 0.8 mm made by 3M was used. As the release layer, an inorganic release coating agent was used by coating the surface of the protective layer with a thickness of 0.5 mm. The press used was a stainless steel press.
次に、150℃に加熱したプレスを用いて2層フィルムを加熱しながら基板側にプレス荷重64kgfで押圧し、接着層を加熱して硬化させるとともに、基板と保護層とを接着層を介して接合した。 Next, while heating the two-layer film using a press heated to 150 ° C., it is pressed to the substrate side with a press load of 64 kgf, the adhesive layer is heated and cured, and the substrate and the protective layer are interposed via the adhesive layer. Joined.
最後に、基板を縦54mm、横86mmの大きさに切断し、それぞれICチップを1個実装した本実施例のICカードを作製した。 Finally, the substrate was cut into a size of 54 mm in length and 86 mm in width, and an IC card of this example in which one IC chip was mounted was produced.
(比較例)
下記のとおり、図4に示した従来の工程と同様にして、ICカードを作製した。
(Comparative example)
As described below, an IC card was produced in the same manner as the conventional process shown in FIG.
先ず、位置合わせ用の認識マークが表示された基板の一部(縦54mm、横86mm)に、記録マークを覆わないように第1の接着剤を厚さ0.1mmで塗布した。第1の接着剤としては、実施例1と同様の接着剤を用いた。また、基板としては、実施例1で用いたPET基板を、縦54mm、横86mmの大きさに切断したものを用いた。 First, a first adhesive having a thickness of 0.1 mm was applied to a part of the substrate (54 mm long and 86 mm wide) on which the alignment recognition marks were displayed so as not to cover the recording marks. As the first adhesive, the same adhesive as in Example 1 was used. In addition, as the substrate, the PET substrate used in Example 1 was cut into a size of 54 mm long and 86 mm wide.
次に、第1の接着剤の上に、認識マークを基準に位置合わせして約200℃に加熱したICチップを1個載置して、ボンディング実装した。ICチップは、実施例1と同様のICチップを用いた。ICチップのボンディング圧は、5kgfとした。 Next, on the first adhesive, one IC chip that was positioned at the reference mark and heated to about 200 ° C. was placed and mounted by bonding. As the IC chip, the same IC chip as in Example 1 was used. The bonding pressure of the IC chip was 5 kgf.
次に、ICチップが実装された基板の全面を覆うように、ロールコータを用いて第2の接着剤を厚さ0.2mmで塗布した。第2の接着剤としては、エポキシ系接着剤を用いた。 Next, the 2nd adhesive agent was apply | coated by thickness 0.2mm using the roll coater so that the whole surface of the board | substrate with which the IC chip was mounted may be covered. An epoxy adhesive was used as the second adhesive.
次に、第2の接着剤の上に保護層を配置した。保護層としては、実施例1と同様のアクリル樹脂フィルムを用いた。 Next, a protective layer was disposed on the second adhesive. As the protective layer, the same acrylic resin film as in Example 1 was used.
最後に、150℃に加熱したプレスを用いて保護層を加熱しながら基板側にプレス荷重4kgfで押圧し、第2の接着剤を加熱して硬化させるとともに、基板と保護層とを第2の接着剤を介して接合して、本比較例のICカードを作製した。 Finally, while pressing the protective layer using a press heated to 150 ° C., the substrate is pressed to the substrate side with a press load of 4 kgf to heat and cure the second adhesive, and the substrate and the protective layer are bonded to the second layer. The IC card of this comparative example was produced by bonding through an adhesive.
上記実施例では、一種類の接着剤を用いるだけで、基板と保護層との間にICチップを配置したICカードを製造でき、製造工程を簡略化できる。また、基板と保護層との間に複数のICチップを配置した後に切断することにより、複数のICカードを一度に製造でき、製造効率を向上できる。このため、低コストでの大量生産が可能なICカード等の半導体装置の製造方法を提供できる。 In the above embodiment, an IC card in which an IC chip is arranged between the substrate and the protective layer can be manufactured by using only one type of adhesive, and the manufacturing process can be simplified. In addition, by arranging a plurality of IC chips between the substrate and the protective layer and then cutting, a plurality of IC cards can be manufactured at a time, and the manufacturing efficiency can be improved. Therefore, a method for manufacturing a semiconductor device such as an IC card that can be mass-produced at low cost can be provided.
一方、上記比較例では、二種類の接着剤を塗布する必要があり、製造工程が煩雑となる。また、1つの基板ごとに1個のICチップを配置しているため、製造効率が良好ではない。 On the other hand, in the comparative example, it is necessary to apply two types of adhesives, and the manufacturing process becomes complicated. Further, since one IC chip is arranged for each substrate, the manufacturing efficiency is not good.
以上の実施例を含む本発明の実施形態に関し、さらに以下の付記を開示する。 Regarding the embodiment of the present invention including the above examples, the following additional notes are further disclosed.
(付記1) 位置合わせ用の認識マークが表示された基板の一方の主面全体に、前記認識マークが透視可能な接着層を形成する第1の工程と、
前記接着層の上に、前記認識マークを基準に位置合わせして半導体素子を載置する第2の工程と、
前記半導体素子が載置された前記接着層の全面を覆うように保護層を形成する第3の工程と、
前記基板と前記保護層とを前記接着層を介して接合する第4の工程とを含むことを特徴とする半導体装置の製造方法。
(Additional remark 1) The 1st process of forming the adhesive layer which can see through the said recognition mark on one whole main surface of the board | substrate with which the recognition mark for alignment was displayed,
A second step of placing a semiconductor element on the adhesive layer with the recognition mark as a reference; and
A third step of forming a protective layer so as to cover the entire surface of the adhesive layer on which the semiconductor element is placed;
A method for manufacturing a semiconductor device, comprising: a fourth step of bonding the substrate and the protective layer through the adhesive layer.
(付記2) 前記接着層は、熱硬化性樹脂を含み、
前記第4の工程において、前記接着層を加熱して硬化させることにより、前記基板と前記保護層とを接合する付記1に記載の半導体装置の製造方法。
(Appendix 2) The adhesive layer includes a thermosetting resin,
The method for manufacturing a semiconductor device according to appendix 1, wherein, in the fourth step, the substrate and the protective layer are joined by heating and curing the adhesive layer.
(付記3) 前記接着層は、熱硬化性樹脂を含み、
前記第2の工程において、前記半導体素子を加熱した後に前記接着層の上に載置することにより、前記半導体素子の少なくとも下部に位置する前記接着層を加熱して硬化させ、前記半導体素子を前記基板上に固定し、
前記第4の工程において、未硬化の前記接着層を加熱して硬化させることにより、前記基板と前記保護層とを接合する付記1に記載の半導体装置の製造方法。
(Additional remark 3) The said contact bonding layer contains a thermosetting resin,
In the second step, by heating the semiconductor element and placing it on the adhesive layer, the adhesive layer located at least under the semiconductor element is heated and cured, and the semiconductor element is Fixed on the board,
The method for manufacturing a semiconductor device according to appendix 1, wherein, in the fourth step, the uncured adhesive layer is heated and cured to join the substrate and the protective layer.
(付記4) 前記第2の工程において、前記半導体素子を前記接着層の上に複数載置し、
前記第4の工程において、前記基板と前記保護層とを前記接着層を介して接合し、前記基板と前記保護層との間に複数の前記半導体素子が配置された半導体装置前駆体を形成し、
さらに、前記半導体装置前駆体を、前記半導体素子が少なくとも1個含まれるように個片に切断する第5の工程を含む付記1に記載の半導体装置の製造方法。
(Appendix 4) In the second step, a plurality of the semiconductor elements are placed on the adhesive layer,
In the fourth step, the substrate and the protective layer are bonded via the adhesive layer, and a semiconductor device precursor in which a plurality of the semiconductor elements are arranged between the substrate and the protective layer is formed. ,
The semiconductor device manufacturing method according to appendix 1, further comprising a fifth step of cutting the semiconductor device precursor into individual pieces so that at least one semiconductor element is included.
(付記5) 前記第3の工程において、剥離層と前記保護層とからなる2層フィルムを、前記保護層が前記接着層に対向するように配置し、前記2層フィルムを前記接着層に対して押圧することにより、前記保護層を前記接着層上に配置した後、前記保護層と前記剥離層とを分離する付記1に記載の半導体装置の製造方法。 (Supplementary Note 5) In the third step, a two-layer film composed of a release layer and the protective layer is disposed so that the protective layer faces the adhesive layer, and the two-layer film is disposed on the adhesive layer. The manufacturing method of the semiconductor device according to appendix 1, wherein the protective layer and the release layer are separated after the protective layer is disposed on the adhesive layer by pressing.
(付記6) 前記接着層は、フィルム状接着剤から形成されている付記1〜5のいずれか1項に記載の半導体装置の製造方法。 (Additional remark 6) The said adhesive layer is a manufacturing method of the semiconductor device of any one of Additional remarks 1-5 currently formed from the film adhesive.
(付記7) 前記接着層は、液状接着剤から形成されている付記1〜5のいずれか1項に記載の半導体装置の製造方法。 (Additional remark 7) The said adhesive layer is a manufacturing method of the semiconductor device of any one of Additional remarks 1-5 currently formed from the liquid adhesive agent.
(付記8) 前記液状接着剤は、ロールコータを用いて塗布される付記7に記載の半導体装置の製造方法。 (Additional remark 8) The said liquid adhesive is a manufacturing method of the semiconductor device of Additional remark 7 applied using a roll coater.
(付記9) 前記接着層は、ナノ粒子フィラーを含む透明性接着剤から形成されている付記1〜8のいずれか1項に記載の半導体装置の製造方法。 (Additional remark 9) The said contact bonding layer is a manufacturing method of the semiconductor device of any one of Additional remark 1-8 currently formed from the transparent adhesive agent containing a nanoparticle filler.
(付記10) 前記保護層は、熱可塑性樹脂フィルムから形成されている付記1〜5のいずれか1項に記載の半導体装置の製造方法。 (Additional remark 10) The said protective layer is a manufacturing method of the semiconductor device of any one of Additional remarks 1-5 currently formed from the thermoplastic resin film.
11、21、101 認識マーク
12、22、102 基板
13、23 接着層
14、24 半導体素子
15、25、106 保護層
16 半導体装置
26 剥離層
27 2層フィルム
28 プレス
29、30 ロール
103 第1の接着剤
104 ICチップ
105 第2の接着剤
107 ICカード
11, 21, 101
Claims (5)
前記接着層の上に、前記認識マークを基準に位置合わせして半導体素子を載置する第2の工程と、
前記半導体素子が載置された前記接着層の全面を覆うように保護層を形成する第3の工程と、
前記基板と前記保護層とを前記接着層を介して接合する第4の工程とを含むことを特徴とする半導体装置の製造方法。 A first step of forming an adhesive layer through which the recognition mark can be seen through on the entire main surface of one of the substrates on which the recognition mark for alignment is displayed;
A second step of placing a semiconductor element on the adhesive layer with the recognition mark as a reference; and
A third step of forming a protective layer so as to cover the entire surface of the adhesive layer on which the semiconductor element is placed;
A method for manufacturing a semiconductor device, comprising: a fourth step of bonding the substrate and the protective layer through the adhesive layer.
前記第4の工程において、前記接着層を加熱して硬化させることにより、前記基板と前記保護層とを接合する請求項1に記載の半導体装置の製造方法。 The adhesive layer includes a thermosetting resin,
The method of manufacturing a semiconductor device according to claim 1, wherein in the fourth step, the substrate and the protective layer are joined by heating and curing the adhesive layer.
前記第2の工程において、前記半導体素子を加熱した後に前記接着層の上に載置することにより、前記半導体素子の少なくとも下部に位置する前記接着層を加熱して硬化させ、前記半導体素子を前記基板上に固定し、
前記第4の工程において、未硬化の前記接着層を加熱して硬化させることにより、前記基板と前記保護層とを接合する請求項1に記載の半導体装置の製造方法。 The adhesive layer includes a thermosetting resin,
In the second step, by heating the semiconductor element and placing it on the adhesive layer, the adhesive layer located at least under the semiconductor element is heated and cured, and the semiconductor element is Fixed on the board,
2. The method of manufacturing a semiconductor device according to claim 1, wherein in the fourth step, the substrate and the protective layer are joined by heating and curing the uncured adhesive layer.
前記第4の工程において、前記基板と前記保護層とを前記接着層を介して接合し、前記基板と前記保護層との間に複数の前記半導体素子が配置された半導体装置前駆体を形成し、
さらに、前記半導体装置前駆体を、前記半導体素子が少なくとも1個含まれるように個片に切断する第5の工程を含む請求項1に記載の半導体装置の製造方法。 In the second step, a plurality of the semiconductor elements are placed on the adhesive layer,
In the fourth step, the substrate and the protective layer are bonded via the adhesive layer, and a semiconductor device precursor in which a plurality of the semiconductor elements are arranged between the substrate and the protective layer is formed. ,
The method of manufacturing a semiconductor device according to claim 1, further comprising a fifth step of cutting the semiconductor device precursor into individual pieces so that at least one semiconductor element is included.
In the third step, a two-layer film composed of a release layer and the protective layer is disposed so that the protective layer faces the adhesive layer, and the two-layer film is pressed against the adhesive layer. 2. The method of manufacturing a semiconductor device according to claim 1, wherein after the protective layer is disposed on the adhesive layer, the protective layer and the release layer are separated.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000099679A (en) * | 1998-09-25 | 2000-04-07 | Toppan Forms Co Ltd | Contact type ic card and its manufacture |
JP2002028896A (en) * | 2000-07-13 | 2002-01-29 | Hitachi Ltd | Die with see-through optical system and positioning method |
JP2003006596A (en) * | 2001-06-25 | 2003-01-10 | Navitas Co Ltd | Manufacturing device data carrier sheet |
JP2003236432A (en) * | 2002-02-12 | 2003-08-26 | Konica Corp | Method for manufacturing laminate, method for coating adhesive, device for manufacturing laminate and device for coating adhesive |
JP2005045161A (en) * | 2003-07-25 | 2005-02-17 | Toppan Forms Co Ltd | Antenna sheet |
-
2005
- 2005-05-17 JP JP2005143952A patent/JP4740645B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000099679A (en) * | 1998-09-25 | 2000-04-07 | Toppan Forms Co Ltd | Contact type ic card and its manufacture |
JP2002028896A (en) * | 2000-07-13 | 2002-01-29 | Hitachi Ltd | Die with see-through optical system and positioning method |
JP2003006596A (en) * | 2001-06-25 | 2003-01-10 | Navitas Co Ltd | Manufacturing device data carrier sheet |
JP2003236432A (en) * | 2002-02-12 | 2003-08-26 | Konica Corp | Method for manufacturing laminate, method for coating adhesive, device for manufacturing laminate and device for coating adhesive |
JP2005045161A (en) * | 2003-07-25 | 2005-02-17 | Toppan Forms Co Ltd | Antenna sheet |
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