JP2006135356A - Transfer method of thin-film transistor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transfer method of a thin-film transistor by which light leaked from a separation layer will not reach the thin-film transistor, even if these is leakage of light from the separation layer. <P>SOLUTION: A method for transferring a transferred layer 140, including the thin-film transistor on a substrate 100 onto a transfer member 180 includes a first step of forming the separation layer 120 on the substrate, a second step of forming a separation layer on a silicon-based light absorbing layer 126 on the separation layer, a third step for forming the transferred layer 140 on the silicon-based light absorbing layer, a fourth step of adhering the transferred layer to the transfer member 180 with an adhesive layer therebetween, a fifth step of irradiating the separation layer 140 with a light, with the substrate 100 therebetween so as to form in-layer and/or at-interface exfoliation of the separation layer 140, and a sixth step of detaching the substrate 100 from the transferred layer 140, after the fourth and fifth processes. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a thin film transistor transfer method.

For example, when manufacturing a liquid crystal display using a thin film transistor (TFT), a process of forming a thin film transistor on a substrate by CVD or the like is performed. Since the process of forming the thin film transistor on the substrate involves a high temperature treatment, the substrate must be made of a material having excellent heat resistance, that is, a material having a high softening point and a high melting point. Therefore, at present, quartz glass is used as a substrate that can withstand a temperature of about 1000 ° C., and heat-resistant glass is used as a substrate that can withstand a temperature of around 500 ° C.
JP-T 6-504139

  As described above, the substrate on which the thin film devices are mounted must satisfy the conditions for manufacturing those thin film devices. That is, the substrate to be used is determined so as to satisfy the manufacturing conditions of the mounted device.

  However, when attention is paid only to the stage after the completion of the substrate on which the thin film device such as TFT is mounted, the above-mentioned “substrate” may not always be preferable.

  For example, as described above, a quartz substrate, a heat-resistant glass substrate, or the like is used when a manufacturing process involving high-temperature processing is performed, but these are very expensive, and thus increase the product price.

  Further, the glass substrate is heavy and has a property of being easily broken. In liquid crystal displays used in portable electronic devices such as palmtop computers and mobile phones, it is desirable to be as cheap as possible, light, to withstand some deformation, and not to break even when dropped. The glass substrate is usually heavy, weak against deformation, and may be destroyed by dropping.

  In other words, there is a groove between the constraints resulting from the manufacturing conditions and the desirable characteristics required for the product, and it has been extremely difficult to satisfy both conditions and characteristics.

  Therefore, the present inventors have formed a transfer layer including a thin film device on the first substrate by a conventional process, and then separated the transfer layer including the thin film device from the first substrate, so that the second layer Has been proposed (Japanese Patent Application No. 8-225643). For this purpose, a separation layer is formed between the first substrate and the thin film device which is the transferred layer. By irradiating the separation layer with light, the inside and / or interface of the separation layer is peeled off, and the bonding force between the first substrate and the transferred layer is weakened, so that the transferred layer becomes the first substrate. It is possible to be detached from.

  Here, according to further analysis by the present inventor, when the light energy is excessively increased when irradiating the light to the separation layer, light exceeding the energy sufficient to cause separation of the separation layer leaks from the separation layer. It was found that the light was incident on the thin film device of the transferred layer. It has been found that due to this light leakage, the characteristics of the thin film device transferred to the second substrate, such as electrical characteristics, may be deteriorated as compared with the thin film device formed on the first substrate.

  For example, when a TFT is formed as a thin film device, the deterioration characteristics are such that in the process of irradiating light to the separation layer, the irradiated light damages the channel layer, causing a decrease in on-current and an increase in off-current. In the worst case, it was found that the TFT was destroyed.

  The object of the present invention is to form a high-quality thin film transistor by using an established thin film forming technique, even if light leaks from the separation layer, the leaked light does not reach the thin film transistor. It is to provide a new technology that can.

The present invention is a method for transferring a transfer layer including a thin film transistor on a translucent substrate to a transfer body,
A first step of forming a separation layer on the translucent substrate;
A second step of forming a silicon-based light absorption layer on the separation layer;
A third step of forming the transferred layer on the silicon-based light absorption layer;
A fourth step of bonding the transfer layer to the transfer body via an adhesive layer;
A fifth step of irradiating the separation layer with light through the translucent substrate to cause peeling in the layer and / or interface of the separation layer;
A sixth step of separating the translucent substrate from the transferred layer after the fourth and fifth steps;
It is characterized by having.

  According to the present invention, even if light leaks from the separation layer, the leaked light is absorbed by the silicon-based light absorption layer before entering the thin film transistor. Therefore, it is possible to reliably prevent light from entering the thin film transistor, and it is possible to prevent deterioration of characteristics of the thin film transistor due to light incidence. In addition, the transfer layer including the thin film transistor can be formed on the silicon-based light absorption layer. For this reason, there is no risk of metal contamination as in the case where a transfer layer is formed on a metal layer having a light reflection effect, and a thin film device using a thin film forming technique on silicon established in the past is used. Can be formed.

  In the present invention, the separation layer and the light absorption layer are formed of amorphous silicon, and a step of forming a silicon-based intervening layer between the separation layer and the light absorption layer can be further provided.

  As shown in FIG. 31, an amorphous silicon layer that absorbs irradiated light and peels when the light energy reaches a predetermined value or more is used as a separation layer and a silicon-based light absorption layer. A silicon-based material such as silicon oxide is used as an intervening layer for separating the two amorphous silicon layers.

  The silicon light absorption layer can be formed thicker than the separation layer.

  Next, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIGS. 1-6 is a figure for demonstrating the 1st Embodiment (transfer method of a thin film device) of this invention.

[Process 1]
As shown in FIG. 1, a separation layer (light absorption layer) 120 is formed on a substrate 100.

  Hereinafter, the substrate 100 and the separation layer 120 will be described.

(1) Description of Substrate 100 The substrate 100 preferably has a light-transmitting property through which light can pass.

  In this case, the light transmittance is preferably 10% or more, and more preferably 50% or more. If this transmittance is too low, the attenuation (loss) of light increases, and a larger amount of light is required to peel off the separation layer 120.

  The substrate 100 is preferably made of a highly reliable material, and particularly preferably made of a material having excellent heat resistance. The reason is that, for example, when forming the transfer layer 140 and the intermediate layer 142 described later, the process temperature may be high (for example, about 350 to 1000 ° C.) depending on the type and formation method. This is because if the substrate 100 is excellent in heat resistance, the range of setting of film forming conditions such as the temperature condition is widened when forming the transferred layer 140 or the like on the substrate 100.

  Therefore, the substrate 100 is preferably made of a material having a strain point equal to or higher than Tmax, where Tmax is the maximum temperature when the transfer layer 140 is formed. Specifically, the constituent material of the substrate 100 preferably has a strain point of 350 ° C. or higher, and more preferably 500 ° C. or higher. As such a thing, heat resistant glass, such as quartz glass, Corning 7059, Nippon Electric Glass OA-2, is mentioned, for example.

  Further, the thickness of the substrate 100 is not particularly limited, but is usually preferably about 0.1 to 5.0 mm, and more preferably about 0.5 to 1.5 mm. If the thickness of the substrate 100 is too thin, the strength is reduced, and if it is too thick, light attenuation tends to occur when the transmittance of the substrate 100 is low. When the light transmittance of the substrate 100 is high, the thickness thereof may exceed the upper limit value. Note that the thickness of the substrate 100 is preferably uniform so that light can be uniformly irradiated.

(2) Description of Separation Layer 120 The separation layer 120 absorbs irradiated light and causes separation (hereinafter referred to as “in-layer separation” or “interfacial separation”) within the layer and / or at the interface. Preferably, the bonding force between atoms or molecules of the substance constituting the separation layer 120 disappears or decreases due to light irradiation, that is, ablation occurs and delamination and / or What leads to interface peeling is good.

  Furthermore, the gas may be released from the separation layer 120 by light irradiation, and the separation effect may be exhibited. That is, there are a case where the component contained in the separation layer 120 is released as a gas, and a case where the separation layer 120 absorbs light and becomes a gas for a moment, and its vapor is emitted, contributing to the separation. . Examples of the composition of the separation layer 120 include those described in the following A to E.

A. Amorphous silicon (a-Si)
This amorphous silicon may contain hydrogen (H). In this case, the content of H is preferably about 2 atomic% or more, and more preferably about 2 to 20 atomic%. Thus, when a predetermined amount of hydrogen (H) is contained, hydrogen is released by light irradiation, and an internal pressure is generated in the separation layer 120, which becomes a force for peeling the upper and lower thin films. The content of hydrogen (H) in the amorphous silicon is adjusted by appropriately setting film forming conditions such as gas composition, gas pressure, gas atmosphere, gas flow rate, temperature, substrate temperature, and input power in CVD. be able to.

B. Various oxide ceramics such as silicon oxide or silicate compound, titanium oxide or titanate compound, zirconium oxide or zirconate compound, lanthanum oxide or lanthanum oxide compound, electrical conductor (ferroelectric), or semiconductor , SiO ₂ and Si ₃ O ₂ , and examples of the silicate compound include K ₂ SiO ₃ , Li ₂ SiO ₃ , CaSiO ₃ , ZrSiO ₄ , and Na ₂ SiO ₃ .

Titanium _{oxide, TiO, Ti 2 0 3,} Ti0 2 , and examples of titanate compounds, for _{example, BaTi0 4, BaTiO 3, Ba} 2 Ti 9 O 20, BaTi 5 O 11, CaTiO 3, SrTiO 3, PbTiO ₃ , MgTiO ₃ , ZrTiO ₂ , SnTiO ₄ , Al ₂ TiO ₅ , FeTiO ₃ may be mentioned.

The zirconium oxide, ZrO _2, and examples of zirconate compounds such _{BaZrO 3, ZrSiO 4, PbZrO 3} , include MgZrO _{3, K} 2 ZrO _3.

C. Ceramics or dielectrics such as PZT, PLZT, PLLZT, PBZT (ferroelectric)
D. Nitride ceramics such as silicon nitride, aluminum nitride, titanium nitride E. Organic polymer materials Organic polymer materials include -CH-, -CO- (ketone), -CONH- (amide), -NH- (imide), -COO- (ester), -N = N- (azo ), -CH = N- (Schiff) and the like (these bonds are cleaved by light irradiation), particularly any one having many of these bonds. The organic polymer material may have an aromatic hydrocarbon (one or more benzene rings or condensed rings thereof) in the structural formula.

  Specific examples of such organic polymer materials include polyolefins such as polyethylene and polypropylene, polyimide, polyamide, polyester, polymethyl methacrylate (PMMA), polyphenylene sulfide (PPS), polyethersulfone (PES), epoxy resin, and the like. Is given.

F. Examples of the metal include Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr, Gd, Sm, or an alloy containing at least one of them.

  The thickness of the separation layer 120 varies depending on various conditions such as the purpose of peeling, the composition of the separation layer 120, the layer structure, and the formation method, but it is usually preferably about 1 nm to 20 μm, and about 10 nm to 2 μm. More preferably, it is about 40 nm to 1 μm. If the thickness of the separation layer 120 is too small, the uniformity of film formation may be impaired, and peeling may be uneven. If the thickness is too thick, good separation of the separation layer 120 is ensured. In addition, it is necessary to increase the light power (light quantity), and it takes time to remove the separation layer 120 later. Note that the thickness of the separation layer 120 is preferably as uniform as possible.

  The formation method of the separation layer 120 is not particularly limited, and is appropriately selected according to various conditions such as a film composition and a film thickness. For example, CVD (including MOCVD, low pressure CVD, ECR-CVD), vapor deposition, molecular beam vapor deposition (MB), sputtering, ion plating, PVD and other various vapor deposition methods, electroplating, immersion plating (dipping), Various plating methods such as electroless plating, Langmuir Projet (LB) method, spin coating, spray coating, roll coating and other coating methods, various printing methods, transfer methods, ink jet methods, powder jet methods, etc. Two or more of them can be combined to form.

  In the case where the separation layer 120 is made of a sol-gel ceramic or an organic polymer material, it is preferable to form the film by a coating method, particularly spin coating.

[Formation of amorphous silicon layer in step 1]
When the composition of the separation layer 120 is amorphous silicon (a-Si), vapor deposition (CVD), particularly low pressure (LP) CVD, is superior to plasma CVD, atmospheric pressure (AP) CVD, and ECR. .

  For example, a relatively large amount of hydrogen is contained in an amorphous silicon layer formed by plasma CVD. The presence of hydrogen makes it easy to ablate the amorphous silicon layer. However, when the substrate temperature during film formation exceeds 350 ° C., for example, hydrogen is released from the amorphous silicon layer. Separation of the film may occur due to hydrogen released during the process of forming the thin film device.

  Further, the plasma CVD film has relatively low adhesion, and there is a possibility that the substrate 100 and the transferred layer 140 are separated in the wet cleaning process in the device manufacturing process.

  In this respect, the LPCVD film is excellent in that there is no risk of hydrogen being released and sufficient adhesion can be secured.

  Next, the thickness of the amorphous silicon layer 120 as the separation layer will be described with reference to FIG.

  In FIG. 31, the horizontal axis represents the film thickness of the amorphous silicon layer, and the vertical axis represents the light energy absorbed by the layer. As described above, when the amorphous silicon layer is irradiated with light, ablation occurs.

  Here, ablation means that the fixing material that absorbs the irradiation light (the constituent material of the separation layer 120) is excited photochemically or thermally, and the bonds of atoms or molecules inside the surface or inside are cut and released. In general, all or part of the constituent material of the separation layer 120 appears as a phenomenon that causes a phase change such as melting or transpiration (vaporization). In addition, the phase change may result in a minute firing state, which may reduce the binding force.

  It can be seen from FIG. 31 that the absorbed energy required to reach this ablation is lower as the film thickness is thinner.

  From the above, in this embodiment, the thickness of the amorphous silicon layer 120 as the separation layer is reduced. Thereby, the energy of the light irradiated to the amorphous silicon layer 120 can be reduced, and the light source device can be reduced in size while saving energy.

  Next, the numerical value of the film thickness of the amorphous silicon layer 120 as the separation layer will be considered. As can be seen from FIG. 31, the absorption energy required to reach ablation is lower as the amorphous silicon film is thinner. According to the study by the present inventor, the absorption energy is preferably 25 nm or less. It was possible to generate ablation sufficiently. The lower limit of the film thickness is not particularly limited, but if the lower limit is preferably 5 nm, it is determined from the viewpoint of reliably forming the amorphous silicon layer and securing a predetermined adhesion. Therefore, a preferable range of the film thickness of the amorphous silicon layer 120 as the separation layer is 5 to 25 nm. Furthermore, a preferable film thickness is 15 nm or less, and further energy saving and adhesion can be secured. The most preferable film thickness range is 11 nm or less, and is in the vicinity thereof, so that the absorbed energy necessary for ablation can be remarkably reduced.

[Process 2]
Next, as illustrated in FIG. 2, a transfer layer (thin film device layer) 140 is formed on the separation layer 120.

An enlarged cross-sectional view of a portion K of the thin film device layer 140 (a portion surrounded by a one-dot chain line in FIG. 2) is shown on the right side of FIG. As shown in the figure, the thin film device layer 140 includes, for example, a TFT (thin film transistor) formed on a SiO ₂ film (intermediate layer) 142, and this TFT introduces an n-type impurity into the polysilicon layer. The source / drain layer 146, the channel layer 144, the gate insulating film 148, the gate electrode 150, the interlayer insulating film 154, and the electrode 152 made of, for example, aluminum are formed.

In this embodiment, the use of the Si0 ₂ film as an intermediate layer provided in contact with the separation layer 120, it is also possible to use other insulating film such as Si ₃ N _4. The thickness of the Si0 ₂ film (intermediate layer) is appropriately determined in accordance with the degree of its formation purpose and exhibit and can function normally is preferably in the range of about 10 nm to 5 [mu] m, it is about 40nm~1μm of Is more preferable. The intermediate layer is formed for various purposes, for example, a protective layer that physically or chemically protects the transferred layer 140, an insulating layer, a conductive layer, a laser light shielding layer, a migration-preventing barrier layer, or a reflective layer. That exhibit at least one of these functions.

In some cases, Si0 without forming an intermediate layer of ₂ film or the like, the transfer layer directly on the separation layer 120 (thin film device layer) 140 may be formed.

  The transferred layer 140 (thin film device layer) is a layer including a thin film device such as a TFT as shown on the right side of FIG.

  As the thin film device, in addition to the TFT, for example, a thin film diode, a photoelectric conversion element (photosensor, solar cell) or a silicon resistance element composed of a silicon PIN junction, other thin film semiconductor devices, electrodes (eg, ITO, mesa) Transparent electrodes such as films), actuators such as switching elements, memories, piezoelectric elements, micromirrors (piezo thin film ceramics), magnetic recording thin film heads, coils, inductors, thin film highly magnetically permeable materials, and micromagnetic devices combining them, There are filters, reflective films, dichroic mirrors, etc.

  Such a thin film device is usually formed through a relatively high process temperature in relation to its formation method. Therefore, in this case, as described above, the substrate 100 needs to have a high reliability that can withstand the process temperature.

[Process 3]
Next, as shown in FIG. 3, the thin film device layer 140 is bonded (adhered) to the transfer body 180 via the adhesive layer 160.

  Preferable examples of the adhesive constituting the adhesive layer 160 include various curable types such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic curable adhesive. An adhesive is mentioned. The composition of the adhesive may be any, for example, epoxy, acrylate, or silicone. The adhesive layer 160 is formed by, for example, a coating method.

  In the case of using the curable adhesive, for example, a curable adhesive is applied on the transfer layer (thin film device layer) 140, and the transfer body 180 is bonded thereon, followed by curing according to the characteristics of the curable adhesive. The curable adhesive is cured by a method, and the transfer target layer (thin film device layer) 140 and the transfer body 180 are bonded and fixed.

  When the adhesive is a photo-curing type, light is irradiated from the outside of one of the light-transmitting substrate 100 and the light-transmitting transfer body 180 (or from both the outside of the light-transmitting substrate and the transfer body). As the adhesive, a light curable adhesive such as an ultraviolet curable adhesive that does not easily affect the thin film device layer is preferable.

  Unlike the illustration, an adhesive layer 160 may be formed on the transfer body 180 side, and a transfer target layer (thin film device layer) 140 may be adhered thereon. For example, when the transfer body 180 itself has an adhesive function, the formation of the adhesive layer 160 may be omitted.

  Although it does not specifically limit as the transfer body 180, A board | substrate (plate material), especially a transparent substrate are mentioned. Such a substrate may be a flat plate or a curved plate. Further, the transfer body 180 may be inferior to the substrate 100 in characteristics such as heat resistance and corrosion resistance. The reason for this is that in the present invention, a transfer layer (thin film device layer) 140 is formed on the substrate 100 side, and then the transfer layer (thin film device layer) 140 is transferred to the transfer body 180. This is because the properties, particularly heat resistance, do not depend on the temperature condition or the like when forming the transferred layer (thin film device layer) 140.

  Therefore, when the maximum temperature in forming the transfer layer 140 is Tmax, a material having a glass transition point (Tg) or a softening point equal to or lower than Tmax can be used as a constituent material of the transfer body 0. For example, the transfer body 180 can be made of a material having a glass transition point (Tg) or a softening point of preferably 800 ° C. or lower, more preferably 500 ° C. or lower, and further preferably 320 ° C. or lower.

  Further, the mechanical properties of the transfer body 180 are preferably those having a certain degree of rigidity (strength), but may also be flexible and elastic. In particular, the mechanical characteristics of the transfer body 180 may be determined in consideration of the following points.

  When the separation layer 120 is irradiated with light, the substance constituting the separation layer 120 is photochemically or thermally excited, the surface or internal molecules or atoms are cleaved, and the molecules or atoms are released to the outside. The It is preferable to ensure the yield strength by the mechanical strength of the transfer body 180 so that the stress that acts on the upper layer of the separation layer 120 with the release of molecules or atoms can be received by the transfer body 180. This is because deformation or destruction of the upper layer of the separation layer 120 is prevented.

  Such a proof stress is not limited only to the mechanical strength of the transfer body 180, but is a layer positioned above the separation layer 120, that is, any one of the transferred layer 140, the adhesive layer 160, and the transfer body 180. What is necessary is just to ensure by the mechanical strength of one or several layers. In order to ensure such proof strength, the material and thickness of the layer to be transferred 140, the adhesive layer 160, and the transfer body 180 can be appropriately selected.

  When the above-mentioned proof stress cannot be ensured only by the transfer layer 140, the adhesive layer 160, and the transfer body 180, as shown in FIGS. 35 (A) to 35 (E), any position that is an upper layer than the separation layer 120 In addition, the reinforcing layer 132 can be formed.

  The reinforcing layer 132 illustrated in FIG. 35A is provided between the separation layer 120 and the transferred layer 140. In this way, the separation layer 120 can be peeled off, and then the substrate 100 can be separated, and then the reinforcing layer 132 can be removed from the transferred layer 140 together with the remaining separation layer 120. As shown in FIG. 35B, the reinforcing layer 132 provided on the upper layer of the transfer body 180 can also be removed from the transfer body 180 after the separation layer 120 causes peeling.

  The reinforcing layer 132 shown in FIG. 35C is interposed, for example, as an insulating layer in a plurality of layers constituting the transferred layer 140. Each of the reinforcing layers 132 in FIGS. 35D and 35E is disposed in the lower layer or the upper layer of the adhesive layer 140. In these cases, it cannot be removed later.

  Examples of the constituent material of the transfer body 180 include various synthetic resins or various glass materials, and in particular, various synthetic resins and normal (low melting point) inexpensive glass materials are preferable. It can also be determined.

  The synthetic resin may be either a thermoplastic resin or a thermosetting resin. For example, polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, modified Polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, polyamideimide, polycarbonate, poly- (4-methylbenten-1), ionomer, acrylic resin, polymethyl methacrylate, acrylic-styrene copolymer (AS Resin), butadiene-styrene copolymer, polio copolymer (EVOH), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyester such as precyclohexane terephthalate (PCT), poly Ether, polyetherketone (PEK), polyetheretherketone (PEEK), polyetherimide, polyacetal (POM), polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyfluoride Various types of thermoplastic elastomers such as vinylidene fluoride, other fluororesins, styrene, polyolefin, polyvinyl chloride, polyurethane, fluororubber, chlorinated polyethylene, epoxy resin, phenol resin, urea resin, melamine resin, Saturated polyesters, silicone resins, polyurethanes, etc., or copolymers, blends, polymer alloys, etc. mainly composed of these, may be mentioned, and one or more of these may be combined (for example, two layers) As a laminate of the upper) it can be used.

  Examples of the glass material include silicate glass (quartz glass), alkali silicate glass, soda lime glass, potash lime glass, lead (alkali) glass, barium glass, borosilicate glass, and the like. Of these, glass other than silicate glass is preferable because it has a lower melting point than silicate glass, is relatively easy to mold and process, and is inexpensive.

  When the transfer body 180 made of synthetic resin is used, the large transfer body 180 can be integrally formed, and even a complicated shape such as a curved surface or an uneven surface can be easily formed. In addition, various advantages such as low material cost and low manufacturing cost can be obtained. Therefore, the use of a synthetic resin is advantageous in manufacturing a large and inexpensive device (for example, a liquid crystal display).

  The transfer body 180 is a part of a device such as a liquid crystal cell that constitutes an independent device, such as a color filter, an electrode layer, a dielectric layer, an insulating layer, or a semiconductor element. May be included.

  Further, the transfer body 180 may be a substance such as metal, ceramics, stone, or wood paper, or on an arbitrary surface constituting a certain item (on a watch surface, on an air conditioner surface, on a printed circuit board, etc.). ), Or on the surface of a structure such as a wall, pillar, ceiling, or window glass.

[Process 4]
Next, as shown in FIG. 4, light is irradiated from the back side of the substrate 100.

  This light is applied to the separation layer 120 after passing through the substrate 100. Thereby, in-layer peeling and / or interface peeling occurs in the separation layer 120, and the bonding force is reduced or disappears.

  The principle that separation and / or interfacial separation occurs in the separation layer 120 is that the constituent material of the separation layer 120 is ablated, the gas contained in the separation layer 120 is released, and the melting that occurs immediately after irradiation is performed. It is estimated that this is due to phase change such as transpiration.

  Whether the separation layer 120 causes in-layer separation, interfacial separation, or both depends on the composition of the separation layer 120 and various other factors, and one of the factors is irradiation. Conditions such as the type of light, wavelength, intensity, and reaching depth are included.

  The light to be irradiated may be any light as long as it causes the separation layer 120 to undergo in-layer separation and / or interfacial separation. For example, X-ray, ultraviolet light, visible light, infrared light (heat ray), laser light, millimeter wave , Microwave, electron beam, radiation (α ray, β ray, γ ray) and the like. Among these, a laser beam is preferable in that it easily causes separation (ablation) of the separation layer 120.

Examples of the laser device that generates the laser light include various gas lasers, solid lasers (semiconductor lasers), and the like. Excimer lasers, Nd-YAG lasers, Ar lasers, CO ₂ lasers, CO lasers, He-Ne lasers, and the like. Are preferably used, and an excimer laser is particularly preferable among them.

  Since the excimer laser outputs high energy in a short wavelength region, it can cause ablation in the separation layer 2 in a very short time, and thus hardly causes a temperature rise in the adjacent transfer body 180, the substrate 100, and the like. That is, the separation layer 120 can be peeled without causing deterioration or damage.

  In addition, when ablation is caused in the separation layer 120, the wavelength of the irradiated laser light is preferably about 100 nm to 350 nm when there is a wavelength dependency of light.

  FIG. 7 shows an example of the transmittance of the substrate 100 with respect to the wavelength of light. As shown in the figure, the transmittance sharply increases with respect to a wavelength of 300 nm. In such a case, light with a wavelength of 300 nm or more (for example, Xe-Cl excimer laser light with a wavelength of 308 nm) is irradiated.

  Further, when the separation layer 120 is given a separation characteristic by causing a phase change such as outgassing, vaporization, and sublimation, the wavelength of the irradiated laser light is preferably about 350 to 1200 nm.

Further, the energy density of the irradiated laser light, particularly in the case of an excimer laser, is preferably about 10 to 5000 mJ / cm ^2, and more preferably about 100 to 1000 mJ / cm ² . The irradiation time is preferably about 1 to 1000 nsec, more preferably about 10 to 100 nsec. When the energy density is low or the irradiation time is short, sufficient ablation or the like does not occur, and when the energy density is high or the irradiation time is long, the transferred layer 140 is adversely affected by the irradiation light transmitted through the separation layer 120. There is a risk.

  Here, in this embodiment, since the separation layer 120 is formed of an amorphous silicon layer having a thickness of, for example, 10 nm, the amorphous silicon layer 120 can be ablated by absorbing relatively small light energy. . A suitable method for absorbing relatively small light energy in the amorphous silicon layer 120 will be described with reference to FIG.

  FIG. 32 shows a method of irradiating almost the entire surface of the separation layer 120 through the substrate 100 by intermittently scanning the line beam. In each figure, when the number of times the line beam is scanned is represented by N, the N-th line beam irradiation region 20 (N) and the N + 1-th line beam irradiation region 20 (N + 1) are not overlapped. Thus, each beam scan is performed. For this reason, a low irradiation region or a non-irradiation region 30 that is sufficiently narrower than each irradiation region is formed between the adjacent irradiation regions 20 (N) and 20 (N + 1).

  Here, when the line beam 10 is moved relative to the substrate 100, if the beam is continuously emitted during the movement, the area 30 is a low irradiation area. On the other hand, if the line beam 10 is not emitted during the movement, the area 30 is a non-irradiated area.

  Unlike the method shown in FIG. 32, if the beam irradiation regions are overlapped each other, excessive light more than light sufficient to cause separation in the separation layer 120 and / or the interface is irradiated. Become. When a part of the excessive light leaks and enters the transfer layer 140 including the thin film device via the separation layer 120, the characteristics of the thin film device, for example, electrical characteristics are deteriorated.

  In the method of FIG. 32, such excessive light is not irradiated to the separation layer 120, so that the original characteristics of the thin film device can be maintained even after the thin film device is transferred to the transfer body. Note that separation does not occur in the separation layer 120 corresponding to the low irradiation region or the non-irradiation region 30, but the adhesion between the separation layer 120 and the substrate 100 is sufficiently reduced by separation in the beam irradiation regions on both sides thereof. Can do.

  As a countermeasure when the irradiation light transmitted through the separation layer 120 reaches the transfer layer 140 and has an adverse effect, for example, as shown in FIG. 30, tantalum (Ta) is formed on the separation layer (laser absorption layer) 120. Or the like. Thereby, the laser light transmitted through the separation layer 120 is completely reflected at the interface of the metal film 124 and does not adversely affect the thin film device above it.

  However, when the metal film 124 is formed as shown in FIG. 30, it is necessary to form a thin film device thereon, and even if a silicon-based insulating layer is interposed between the metal film 124 and the thin film device, the thin film device is formed. The device may be contaminated with metal.

  Therefore, it is preferable to adopt the method shown in FIGS. 33 and 34 as a method instead of FIG.

FIG. 33 shows an example using an amorphous silicon layer 120 as a separation layer, and an amorphous silicon layer 126 used as a silicon-based light absorption layer is further provided below the transferred layer 140. In order to separate the two amorphous silicon layers 120 and 126, for example, a silicon oxide film (SiO ₂ ) is interposed as a silicon-based intervening layer.

  In this case, even if the irradiation light passes through the amorphous silicon layer 120 as the separation layer, the transmitted light is absorbed by the amorphous silicon layer 126 as the silicon-based light absorption layer. As a result, the thin film device above it is not adversely affected.

  In addition, since the two added layers 126 and 128 are both silicon-based layers, they do not cause metal contamination as established by conventional thin film formation techniques.

  Note that if the thickness of the amorphous silicon layer 126 as the light absorption layer is made larger than the thickness of the amorphous silicon layer 120 as the separation layer, the possibility of ablation occurring in the amorphous silicon layer 126 can be reliably prevented. . However, the light energy incident on the amorphous silicon layer 126 is not limited to the above-described film thickness relationship, and is sufficiently smaller than the light energy directly incident on the amorphous silicon layer 120 as the separation layer. Ablation can be prevented from occurring.

  As shown in FIG. 34, an example in which a silicon-based light absorption layer 130 made of a material different from that of the separation layer 120 is shown. In this case, the silicon-based intervening layer 128 is not necessarily provided.

When the light leakage countermeasures in the separation layer 120 are performed as shown in FIGS. 33 and 34, even if the light absorption energy for causing separation in the separation layer 120 is large,
There is an advantage that adverse effects on the thin film device can be surely prevented.

  Irradiation light represented by laser light is preferably irradiated so that its intensity is uniform. The irradiation direction of the irradiation light is not limited to the direction perpendicular to the separation layer 120 and may be a direction inclined by a predetermined angle with respect to the separation layer 120.

  Next, as shown in FIG. 5, a force is applied to the substrate 100 to release the substrate 100 from the separation layer 120. Although not shown in FIG. 5, a separation layer may adhere on the substrate 100 after the separation.

  Next, as shown in FIG. 6, the remaining separation layer 120 is removed by a method such as cleaning, etching, ashing, polishing, or a combination thereof. As a result, the transferred layer (thin film device layer) 140 is transferred to the transfer body 180.

  If a part of the separation layer is attached to the detached substrate 100, it is removed in the same manner. When the substrate 100 is made of an expensive material such as quartz glass or a rare material, the substrate 100 is preferably used for recycling (recycling). That is, the present invention can be applied to the substrate 100 to be reused, and is highly useful.

Through the above steps, the transfer of the transfer target layer (thin film device layer) 140 to the transfer body 180 is completed. Thereafter, removal of the SiO ₂ film adjacent to the transferred layer (thin film device layer) 140, formation of a conductive layer such as wiring on the transferred layer 140, or a desired protective film can be performed.

  In the present invention, the layer to be transferred (thin film device layer) 140 itself, which is the object to be peeled, is not peeled directly, but is peeled off at the separation layer bonded to the layer to be transferred (thin film device layer) 140. Regardless of the characteristics, conditions, etc. of the object (transfer target layer 140), it can be peeled (transferred) easily, reliably and uniformly, and damage to the object (transfer target layer 140) due to the peeling operation is also possible. Therefore, the high reliability of the transferred layer 140 can be maintained.

(Second Embodiment)
An example of a specific manufacturing process when a TFT having a CMOS structure is formed on a substrate and transferred to a transfer body will be described with reference to FIGS.

(Process 1)
As shown in FIG. 8, an amorphous silicon layer 120 formed by LPCVD as a separation layer is formed on a substrate (for example, a quartz substrate) 100. The film thickness of this amorphous silicon layer 120 is, for example, 10 nm. An intermediate layer (for example, SiO ₂ film) 142 and an amorphous silicon layer (for example, formed by LPCVD method) 143 are sequentially stacked thereon, and then laser is applied to the entire surface of the amorphous silicon layer 143 from above. Light is irradiated and annealed. Thereby, the amorphous silicon layer 143 is recrystallized to become a polysilicon layer. Here, as shown in FIG. 33, a silicon-based intervening layer such as a silicon oxide film 128 and another amorphous silicon layer 126 for light absorption are provided between the amorphous silicon layer 120 serving as a separation layer and the intermediate layer 142. It can also be formed.

(Process 2)
Subsequently, as shown in FIG. 9, the polysilicon layer obtained by laser annealing is patterned to form islands 144a and 144b.

(Process 3)
As shown in FIG. 10, gate insulating films 148a and 148b covering the islands 144a and 144b are formed by, for example, a CVD method.

(Process 4)
As shown in FIG. 11, gate electrodes 150a and 150b made of polysilicon or metal are formed.

(Process 5)
As shown in FIG. 12, a mask layer 170 made of polyimide or the like is formed, and, for example, boron (B) ions are implanted by self-alignment using the gate electrode 150b and the mask layer 170 as a mask. As a result, p ⁺ layers 172a and 172b are formed.

(Step 6)
As shown in FIG. 13, a mask layer 174 made of polyimide or the like is formed, and, for example, phosphorus (P) ions are implanted by self-alignment using the gate electrode 150a and the mask layer 174 as a mask. As a result, n ⁺ layers 146a and 146b are formed.

(Step 7)
As shown in FIG. 14, an interlayer insulating film 154 is formed, and after selectively forming contact holes, electrodes 152a to 152d are formed.

  The TFT having the CMOS structure formed in this manner corresponds to the transferred layer (thin film device layer) 140 in FIGS. Note that a protective film may be formed over the interlayer insulating film 154.

(Process 8)
As shown in FIG. 15, an epoxy resin layer 160 as an adhesive layer is formed on a TFT having a CMOS structure, and then the TFT is transferred to a transfer body (for example, soda glass substrate) 180 through the epoxy resin layer 160. paste. Subsequently, heat is applied to cure the epoxy resin, and the transfer body 180 and the TFT are bonded (bonded).

  The adhesive layer 160 may be a photopolymer resin that is an ultraviolet curable adhesive. In this case, the polymer is cured by irradiating ultraviolet rays not from heat but from the transfer member 180 side.

(Step 9)
As shown in FIG. 16, Xe-Cl excimer laser light, for example, is irradiated from the back surface of the substrate 100 by, for example, beam scanning in FIG. This causes separation within the separation layer 120 and / or at the interface. At this time, since the thickness of the amorphous silicon layer 120 which is a separation layer is 10 nm, the light energy for causing separation can be sufficiently reduced. Further, when the amorphous silicon layer 120 is peeled off, stress acts on the layers 142, 154, 160, and 180 above the amorphous silicon layer 120. This stress is applied to the upper layers by the layers 142, 154, 160, and 180, respectively. The thin film device is prevented from being deformed and broken.

(Process 10)
As shown in FIG. 17, the substrate 100 is peeled off.

(Step 11)
Finally, the separation layer 120 is removed by etching. As a result, as shown in FIG. 18, the TFT having the CMOS structure is transferred to the transfer body 180. As shown in FIG. 33, when a silicon-based intervening layer such as a silicon oxide film 128 and another amorphous silicon layer 126 for light absorption are formed on the separation layer 120, The following two steps may be added before the etching removal step. One is a process of removing the amorphous silicon layer 126 which is a light absorption layer by dry etching, for example, and the other is a process of removing the silicon oxide 128 by using hydrofluoric acid, for example.

(Third embodiment)
When the techniques described in the first embodiment and the second embodiment described above are used, for example, a microcomputer configured using a thin film device as shown in FIG. Can be formed.

  In FIG. 19A, on a flexible substrate 182 made of plastic or the like, an amorphous circuit for supplying a power supply voltage of the CPU 300, the RAM 320, the input / output circuit 360, and these circuits in which circuits are formed using thin film devices. A solar cell 340 having a silicon PIN junction is mounted.

  Since the microcomputer shown in FIG. 19A is formed on a flexible substrate, it has a feature that it is strong against bending as shown in FIG.

(Fourth embodiment)
In this embodiment, an example of a manufacturing process in the case where an active matrix type liquid crystal display device using an active matrix substrate as shown in FIGS. 20 and 21 is produced using the above-described thin film device transfer technology. Will be described.

(Configuration of liquid crystal display device)
As shown in FIG. 20, the active matrix type liquid crystal display device includes an illumination light source 400 such as a backlight, a polarizing plate 420, an active matrix substrate 440, a liquid crystal 460, a counter substrate 480, and a polarizing plate 500.

  Note that in the case where a flexible substrate such as a plastic film is used for the active matrix substrate 440 and the counter substrate 480 of the present invention, if a reflective liquid crystal panel using a reflective plate is employed instead of the illumination light source 400, flexibility is achieved. It is possible to realize an active matrix liquid crystal panel that is strong against impact and lightweight. Note that when the pixel electrode is formed of metal, the reflector and the polarizing plate 420 are not necessary.

  An active matrix substrate 440 used in this embodiment is a driver built-in type active matrix substrate in which TFTs are arranged in the pixel portion 442 and a driver circuit (scanning line driver and data line driver) 444 is mounted.

  A cross-sectional view of the main part of the active matrix liquid crystal display device is shown in FIG. 21, and a circuit configuration of the main part of the liquid crystal display device is shown in FIG.

  As shown in FIG. 22, the pixel portion 442 includes a TFT (M1) having a gate connected to the gate line G1, one source / drain connected to the data line D1, and the other source / drain connected to the liquid crystal 460. ) And liquid crystal 460.

  The driver unit 444 includes a TFT (M2) formed by the same process as the TFT (M1) of the pixel unit.

  As shown on the left side of FIG. 21, the TFT (M1) in the pixel portion 442 includes source / drain layers 1100a and 1100b, a channel 1100e, a gate insulating film 1200a, a gate electrode 1300a, an insulating film 1500, and a source. A drain electrode 1400a, 1400b is included.

  Note that reference numeral 1700 denotes a pixel electrode, and reference numeral 1702 denotes a region where the pixel electrode 1700 applies a voltage to the liquid crystal 460 (voltage application region to the liquid crystal). In the figure, the alignment film is omitted. The pixel electrode 1700 is made of ITO (in the case of a light transmission type liquid crystal panel) or a metal such as aluminum (in the case of a reflection type liquid crystal panel). In FIG. 21, the base insulating film (intermediate layer) 1000 under the pixel electrode 1700 is completely removed in the voltage application region 1702 to the liquid crystal, but the present invention is not limited to this, and the base insulating film is not necessarily limited thereto. If the film (intermediate layer) 1000 is thin and does not hinder the application of voltage to the liquid crystal, it may be left.

  Further, as shown on the right side of FIG. 21, the TFT (M2) constituting the driver unit 444 includes source and drain layers 1100c and 1100d, a channel 1100f, a gate insulating film 1200b, a gate electrode 1300b, and an insulating film. 1500 and source / drain electrodes 1400c and 1400d.

In FIG. 21, reference numeral 480 is, for example, a counter substrate (for example, a soda glass substrate), and reference numeral 482 is a common electrode. Reference numeral 1000 is a SiO ₂ film, reference numeral 1600 is an interlayer insulating film (for example, SiO ₂ film), and reference numeral 1800 is an adhesive layer. Reference numeral 1900 is a substrate (transfer body) made of, for example, a soda glass substrate.

(Manufacturing process of liquid crystal display device)
Hereinafter, the manufacturing process of the liquid crystal display device of FIG. 21 will be described with reference to FIGS.

  First, through manufacturing processes similar to those shown in FIGS. 8 to 18, TFTs (M1, M2) as shown in FIG. 23 are formed on a highly reliable substrate (for example, a quartz substrate) 3000 that transmits laser light. The protective film 1600 is configured. In FIG. 23, reference numeral 3100 denotes a separation layer (laser absorption layer). In FIG. 23, both TFTs (M1, M2) are n-type MOSFETs. However, the present invention is not limited to this, and a p-type MOSFET or a CMOS structure may be used.

  Next, as shown in FIG. 24, the protective film 1600 and the base insulating film 1000 are selectively etched, and openings 4000 and 4200 are selectively formed. These two openings are formed simultaneously using a common etching process. Note that in FIG. 24, the base insulating film (intermediate layer) 1000 is completely removed from the opening 4200; however, the present invention is not necessarily limited to this, and the liquid crystal is thin because the base insulating film (intermediate layer) 1000 is thin. It may be left if it does not interfere with voltage application.

  Next, as shown in FIG. 25, a pixel electrode 1700 made of a metal such as an ITO film or aluminum is formed. When an ITO film is used, a transmissive liquid crystal panel is obtained, and when a metal such as aluminum is used, a reflective liquid crystal panel is obtained. Next, as illustrated in FIG. 26, the substrate 1900 is bonded (adhered) through the adhesive layer 1800.

  Next, as shown in FIG. 26, excimer laser light is irradiated from the back surface of the substrate 3000, and then the substrate 3000 is peeled off.

Next, the separation layer (laser absorption layer) 3100 is removed. Thereby, an active matrix substrate 440 as shown in FIG. 27 is completed. The bottom surface of the pixel electrode 1700 (the region denoted by reference numeral 1702) is exposed and can be electrically connected to the liquid crystal. Thereafter, an alignment film is formed on the surface of the insulating film (intermediate layer such as SiO ₂ ) 1000 of the active matrix substrate 440 and the surface of the pixel electrode 1702 and subjected to alignment treatment. In FIG. 27, the alignment film is omitted.

  Further, a common electrode facing the pixel electrode 1709 is formed on the surface thereof, and the counter substrate 480 whose surface is subjected to the orientation treatment and the active matrix substrate 440 of FIG. 21 are sealed with a sealing material (seal material), A liquid crystal is sealed between both substrates to complete a liquid crystal display device as shown in FIG.

(Fifth embodiment)
FIG. 28 shows a fifth embodiment of the present invention.

  In the present embodiment, the above-described thin film device transfer method is executed a plurality of times to transfer a plurality of patterns including the thin film device onto a substrate (transfer body) larger than the transfer source substrate, and finally a large scale An active matrix substrate is formed.

  That is, transfer is performed a plurality of times on a large substrate 7000 to form the pixel portions 7100a to 7100P. As shown by the one-dot chain line on the upper side of FIG. 28, TFTs and wirings are formed in the pixel portion. In FIG. 28, reference numeral 7210 is a scanning line, reference numeral 7200 is a signal line, reference numeral 7220 is a gate electrode, and reference numeral 7230 is a pixel electrode.

  Create a large-scale active matrix substrate with highly reliable thin film devices by repeatedly using a highly reliable substrate or by transferring multiple thin film patterns using multiple first substrates. it can.

(Sixth embodiment)
A sixth embodiment of the present invention is shown in FIG.

  The present embodiment is characterized in that thin film devices having different design rules (that is, design rules for pattern design) are formed on a substrate larger than the substrate of the transfer source by executing the above-described thin film device transfer method a plurality of times. Transferring a plurality of patterns including devices (that is, thin film devices having different minimum line widths).

  In FIG. 29, driver circuits (8000 to 8032) created by a finer manufacturing process than the pixel portions (7100a to 7100p) in the active matrix substrate mounted with drivers are transferred around the substrate 6000 by a plurality of times of transfer. It has been created.

  Since the shift register constituting the driver circuit operates at a logic level under a low voltage, the withstand voltage may be lower than that of the pixel TFT. Therefore, high integration can be achieved by making the TFT finer than the pixel TFT. it can.

  According to the present embodiment, a plurality of circuits having different design rule levels (that is, different manufacturing processes) can be realized on one substrate. Note that the sampling means (thin film transistor M2 in FIG. 22) for sampling the data signal under the control of the shift register needs to have a high breakdown voltage like the pixel TFT, and therefore may be formed by the same process / same design rule as the pixel TFT.

  Next, specific examples of the present invention will be described.

Example 1
A quartz substrate (softening point: 1630 ° C., strain point: 1070 ° C., excimer laser transmittance: almost 100%) having a length of 50 mm × width of 50 mm × thickness of 1.1 mm is prepared, and a separation layer is provided on one side of the quartz substrate. As the (laser light absorption layer), an amorphous silicon (a-Si) film was formed by a low pressure CVD method (Si ₂ H ₆ gas, 425 ° C.). As the thickness of the separation layer, two types of 10 nm and 100 nm were formed.

Next, an SiO ₂ film was formed as an intermediate layer on the separation layer by an ECR-CVD method (SiH ₄ + O ₂ gas, 100 ° C.). The film thickness of the intermediate layer was 200 nm.

Next, an amorphous silicon film having a thickness of 50 nm is formed as a transfer layer on the intermediate layer by a low pressure CVD method (Si ₂ H ₆ gas, 425 ° C.), and laser light (wavelength) is formed on the amorphous silicon film. 308 nm) and crystallized to obtain a polysilicon film. Thereafter, the polysilicon film was subjected to predetermined patterning to form regions serving as the source / drain / channel of the thin film transistor. Thereafter, the surface of the polysilicon film is thermally oxidized at a high temperature of 1000 ° C. or more to form a gate insulating film SiO ₂ , and then a gate electrode (a refractory metal such as Mo is stacked on the gate insulating film). The source / drain regions were formed in a self-aligned manner (self-alignment), and a thin film transistor was formed by ion implantation using the gate electrode as a mask. Thereafter, electrodes and wirings connected to the source / drain regions and wirings connected to the gate electrode are formed as necessary. Al is used for these electrodes and wirings, but is not limited thereto. Further, in the case where there is a concern about melting of Al by laser irradiation in the subsequent process, a metal having a melting point higher than that of Al (that is not melted by laser irradiation in the subsequent process) may be used.

  Next, an ultraviolet curable adhesive is applied on the thin film transistor (film thickness: 100 μm), and a large transparent glass having a length of 200 mm × width of 300 mm × thickness of 1.1 mm is applied to the coating film. After bonding the substrates (soda glass, softening point: 740 ° C., strain point: 511 ° C.), the adhesive was cured by irradiating ultraviolet rays from the glass substrate side, and these were bonded and fixed.

Next, Xe—Cl excimer laser (wavelength: 308 nm) was irradiated from the quartz substrate side to cause separation (in-layer separation and interface separation) in the separation layer. The energy density of the irradiated Xe-Cl excimer laser was 300 mJ / cm ² , and the irradiation time was 20 nsec. The excimer laser irradiation includes spot beam irradiation and line beam irradiation. In the case of spot beam irradiation, spot irradiation is performed on a predetermined unit region (for example, 8 mm × 8 mm), and this spot irradiation is 1 / of the unit region. Irradiate while shifting by about 10 steps. In the case of line beam irradiation, irradiation is performed while shifting a predetermined unit area (for example, 378 mm × 0.1 mm or 378 mm × 0.3 mm (these are areas where 90% or more of energy is obtained)) by about 1/10. I will do it. Thereby, each point of the separation layer is irradiated at least 10 times. This laser irradiation is performed while shifting the irradiation region with respect to the entire surface of the quartz substrate. The above method is effective when the thickness of the separation layer is 100 nm and the light energy absorption is increased for ablation. When the thickness of the separation layer is 10 nm, as shown in FIG. 32, two beam irradiation areas adjacent by beam scanning (for example, two beam irradiation areas 20 (N) and 20 (N + 1) in FIG. 32). Even if they are not overlapped with each other, ablation can be caused and adverse effects on the thin film device can be reduced. At this time, the thin film device was neither deformed nor destroyed by the total proof stress of each layer above the separation layer.

  Thereafter, the quartz substrate and the glass substrate (transfer body) were peeled off at the separation layer, and the thin film transistor and the intermediate layer formed on the quartz substrate were transferred to the glass substrate side.

  Thereafter, the separation layer attached to the surface of the intermediate layer on the glass substrate side was removed by etching, washing, or a combination thereof. Further, the same treatment was performed on the quartz substrate and it was reused.

  If the glass substrate serving as the transfer body is a substrate larger than the quartz substrate, the transfer from the quartz substrate to the glass substrate as in the present embodiment is repeatedly performed in different areas in a plane, and on the glass substrate, More thin film transistors than the number of thin film transistors that can be formed on a quartz substrate can be formed. Furthermore, it can be repeatedly stacked on a glass substrate to form more thin film transistors.

(Example 2)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was an amorphous silicon film containing 20 at% of H (hydrogen).

  Note that the amount of H in the amorphous silicon film was adjusted by appropriately setting conditions during film formation by the low pressure CVD method.

(Example 3)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was a ceramic thin film (composition: PbTiO ₃ , film thickness: 200 nm) formed by a sol-gel method by spin coating.

Example 4
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was a ceramic thin film (composition: BaTiO ₃ , film thickness: 400 nm) formed by sputtering.

(Example 5)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was a ceramic thin film (composition: Pb (Zr, Ti) O ₃ (PZT), film thickness: 50 nm) formed by laser-ablation. It was.

(Example 6)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was a polyimide film (thickness: 200 nm) formed by spin coating.

(Example 7)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was a polyphenylene sulfide film (film thickness: 200 nm) formed by spin coating.

(Example 8)
The thin film transistor was transferred in the same manner as in Example 1 except that the separation layer was an Al layer (film thickness: 300 nm) formed by sputtering.

Example 9
The thin film transistor was transferred in the same manner as in Example 2 except that a Kr-F excimer laser (wavelength: 248 nm) was used as the irradiation light. The energy density of the irradiated laser was 250 mJ / cm ² and the irradiation time was 20 nsec.

(Example 10)
The thin film transistor was transferred in the same manner as in Example 2 except that an Nd-YAIG laser (wavelength: 1068 nm) was used as the irradiation light. Incidentally, the energy density of the laser was irradiated, 400 mJ / cm ^2, the irradiation time was 20 nsec.

(Example 11)
A thin film transistor was transferred in the same manner as in Example 1 except that a thin film transistor having a polysilicon film (film thickness: 80 nm) formed by a high temperature process of 1000 ° C. was used as the transfer layer.

(Example 12)
The thin film transistor was transferred in the same manner as in Example 1 except that a transparent substrate made of polycarbonate (glass transition point: 130 ° C.) was used as the transfer body.

(Example 13)
The thin film transistor was transferred in the same manner as in Example 2 except that a transparent substrate made of AS resin (glass transition point: 70 to 90 ° C.) was used as the transfer body.

(Example 14)
The thin film transistor was transferred in the same manner as in Example 3 except that a transparent substrate made of polymethyl methacrylate (glass transition point: 70 to 90 ° C.) was used as the transfer body.

(Example 15)
The thin film transistor was transferred in the same manner as in Example 5 except that a transparent substrate made of polyethylene terephthalate (glass transition point: 67 ° C.) was used as the transfer body.

(Example 16)
A thin film transistor was transferred in the same manner as in Example 6 except that a transparent substrate made of high-density polyethylene (glass transition point: 77 to 90 ° C.) was used as the transfer body. (Example 17)
The thin film transistor was transferred in the same manner as in Example 9 except that a transparent substrate made of polyamide (glass transition point: 145 ° C.) was used as the transfer body.

(Example 18)
The thin film transistor was transferred in the same manner as in Example 10 except that a transparent substrate made of an epoxy resin (glass transition point: 120 ° C.) was used as the transfer body.

(Example 19)
The thin film transistor was transferred in the same manner as in Example 11 except that a transparent substrate made of polymethyl methacrylate (glass transition point: 70 to 90 ° C.) was used as the transfer body.

  In each of Examples 1 to 19, when the state of the transferred thin film transistor was visually observed with the naked eye and a microscope, there was no defect or unevenness, and the transfer was performed uniformly.

  As described above, by using the transfer technique of the present invention, a thin film device (transfer target layer) can be transferred to various transfer bodies. For example, transfer to materials that cannot be formed directly or that are not suitable for forming, materials that are easy to mold, materials that are inexpensive, and large objects that are difficult to move Can form it.

  In particular, the transfer body may be one having inferior characteristics such as heat resistance and corrosion resistance as compared with the substrate material, such as various synthetic resins and glass materials having a low melting point. Therefore, for example, when manufacturing a liquid crystal display in which a thin film transistor (especially polysilicon TFT) is formed on a transparent substrate, a quartz glass substrate having excellent heat resistance is used as the substrate, and various synthetic resins and low melting points are used as the transfer body. By using a transparent substrate made of an inexpensive and easy-to-process material such as a glass material, a large and inexpensive liquid crystal display can be easily manufactured. Such advantages are not limited to the liquid crystal display, and the same applies to the manufacture of other devices.

  In addition, while receiving the advantages as described above, a transfer layer such as a functional thin film is formed and patterned on a highly reliable substrate, particularly a substrate having high heat resistance such as a quartz glass substrate. Therefore, a highly reliable functional thin film can be formed on the transfer body regardless of the material characteristics of the transfer body.

  In addition, such a highly reliable substrate is expensive, but it can be reused, thereby reducing the manufacturing cost.

It is sectional drawing which shows the 1st process in 1st Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 2nd process in 1st Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 3rd process in 1st Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 4th process in 1st Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 5th process in 1st Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 6th process in 1st Embodiment of the transfer method of the thin film device of this invention. It is a figure which shows the change of the transmittance | permeability with respect to the wavelength of the laser beam of the 1st board | substrate (board | substrate 100 of FIG. 1). It is sectional drawing which shows the 1st process in 2nd Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 2nd process in 2nd Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 3rd process in 2nd Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 4th process in 2nd Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 5th process in 2nd Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 6th process in 2nd Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 7th process in 2nd Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 8th process in 2nd Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 9th process in 2nd Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 10th process in 2nd Embodiment of the transfer method of the thin film device of this invention. It is sectional drawing which shows the 11th process in 2nd Embodiment of the transfer method of the thin film device of this invention. (A), (b) is a perspective view of the microcomputer manufactured using this invention. It is a figure for demonstrating the structure of a liquid crystal display device. It is a figure which shows the cross-section of the principal part of a liquid crystal display device. It is a figure for demonstrating the structure of the principal part of a liquid crystal display device. It is sectional drawing of the device which shows the 1st process of the manufacturing method of the active-matrix board | substrate using this invention. It is sectional drawing of the device which shows the 2nd process of the manufacturing method of the active-matrix board | substrate using this invention. It is sectional drawing of the device which shows the 3rd process of the manufacturing method of the active-matrix board | substrate using this invention. It is sectional drawing of the device which shows the 4th process of the manufacturing method of the active-matrix board | substrate using this invention. It is sectional drawing of the device which shows the 5th process of the manufacturing method of the active matrix substrate using this invention. It is a figure for demonstrating the other example of the transfer method of the thin film device of this invention. It is a figure for demonstrating the further another example of the transfer method of the thin film device of this invention. It is a figure for demonstrating the modification of the transfer method of the thin film device of this invention. It is a figure which shows the correlation with the light absorption energy of a separation layer, and a film thickness of the process which leads to ablation when a separation layer is formed with an amorphous silicon. It is a top view which shows an example of the beam scan to a separation layer. It is a figure which shows the modification which has arrange | positioned the amorphous silicon layer used as a light absorption layer through the silicon-type intervening layer on the amorphous silicon layer which is a separation layer. It is a figure which shows the modification which has arrange | positioned the silicon type light absorption layer of a material different from a separation layer on a separation layer. (A)-(E) is a figure which shows the modification which has arrange | positioned the reinforcement layer for preventing the deformation | transformation or destruction of a thin film device at the time of peeling of a separation layer, respectively.

Explanation of symbols

20 (N) N-th beam irradiation region 30 Non-irradiation region (low irradiation region)
100 substrate 120 amorphous silicon layer (laser absorption layer)
126 Silicon-based light absorption layer 128 Silicon-based intervening layer 130 Silicon-based light absorption layer 132 Reinforcement layer 140 Thin film device layer 160 Adhesive layer 180 Transfer body

Claims (3)

A method of transferring a transfer layer including a thin film transistor on a translucent substrate to a transfer body,
A first step of forming a separation layer on the translucent substrate;
A second step of forming a silicon-based light absorption layer on the separation layer;
A third step of forming the transferred layer on the silicon-based light absorption layer;
A fourth step of bonding the transfer layer to the transfer body via an adhesive layer;
A fifth step of irradiating the separation layer with light through the translucent substrate to cause peeling in the layer and / or interface of the separation layer;
A sixth step of separating the translucent substrate from the transferred layer after the fourth and fifth steps;
A method of transferring a thin film transistor, comprising: In claim 1,
The separation layer and the silicon-based light absorption layer are formed of amorphous silicon,
A method of transferring a thin film transistor, further comprising the step of forming a silicon-based intervening layer between the isolation layer and the silicon-based light absorption layer. In claim 1 or 2,
The method of transferring a thin film transistor, wherein the silicon-based light absorption layer is formed thicker than the separation layer.

Images