JP2006108880A - Imaging apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imaging apparatus for detecting a linear defect extended in a vertical direction produced due to a potential dip of a horizontal transfer register and correcting a pixel signal of the detected linear defect when an operating temperature of a solid-state image sensor is low, and to provide a correction method of the pixel signal. <P>SOLUTION: The solid-state image sensor 3 is activated at a low temperature, a linear defect detection correction circuit 6 detects the linear defect of the solid-state image sensor 3 on the basis of the pixel signal of the solid-state image sensor 3, and an address of the detected linear defect is stored. In the case of operating the imaging apparatus, the linear defect detection correction circuit 6 detects the operating temperature of the solid-state image sensor 3, compares the detected temperature with a threshold value, when it is discriminated that the operating temperature of the solid-state image sensor 3 is lower than the threshold value, the address wherein the stored linear defect is read out, and the pixel signal of the linear defect corresponding to the address of the solid-state image sensor 3 is corrected. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an imaging apparatus that corrects a pixel signal of a defective pixel of a solid-state imaging device and a pixel signal correction method that corrects a pixel signal of a defective pixel output by the solid-state imaging device.

In an image taken by an imaging apparatus having a solid-state image sensor such as a video camera or a digital camera, various image defects due to the solid-state image sensor appear. Well-known image defects include black defects and white spots (white scratches). Black defects appear in the image as black dots and white dots as white dots.
White spots are caused by dark currents generated by impurities and crystal defects in the semiconductor. This dark current increases as the operating temperature of the solid-state image sensor increases. For this reason, an imaging device that detects the operating temperature of the solid-state imaging device and corrects the white point pixel signal output from the solid-state imaging device based on the detected operating temperature is disclosed (for example, Patent Document 1 and 2).

By the way, in addition to these image defects, as a defect caused by the horizontal transfer register of the solid-state imaging device, a linear defect extending in the vertical direction in which the pixel signal is slightly lower than that in the surrounding pixels in the horizontal direction may appear.
For example, in the case of a CCD (Charge Coupled Device), signal charges accumulated in a pixel (photoelectric conversion element) are read to a vertical transfer register and transferred in the vertical direction, and transferred and output in the horizontal direction by the horizontal transfer register. The The horizontal transfer register has a plurality of transfer electrodes. In the horizontal transfer register, when a drive voltage is applied to each of the plurality of transfer electrodes, the potential energy of the charge transfer path changes and signal charges are transferred.

Japanese Patent Laid-Open No. 9-23358 JP 11-317516 A

However, in the horizontal transfer register, if there is a foreign object between the charge transfer path and the transfer electrode, if the insulating oxide film provided between the charge transfer path and the transfer electrode is locally thick, When the insulating oxide film between the transfer electrodes is thick, the potential dip may occur in the charge transfer path if the density of the impurity ions implanted into the charge transfer path is not uniform. The potential dip means a local hole in the potential chanel energy and captures several electrons.
When a potential dip occurs, part of the signal charge is captured there. That is, part of the signal charge transferred to the horizontal transfer register by the vertical transfer register is captured by the potential dip, and the signal level of the pixel signal is lowered. As a result, dark linear defects extending in the vertical direction appear in the image output by the solid-state imaging device.

  A linear defect appears when the illuminance of light incident on the solid-state image sensor is low and when the operating temperature of the solid-state image sensor is low. When the illuminance of the incident light is low, the level of the pixel signal output from the solid-state imaging device is low, so that the influence of the decrease in the pixel signal due to the capture of electrons in the potential dip appears relatively large. In addition, when the operating temperature of the solid-state imaging device is low, the kinetic energy of electrons becomes small, so that it becomes difficult for the electrons captured by the potential dip to escape from the potential dip.

  On the other hand, when the illuminance of incident light is high, the level of the pixel signal output from the solid-state imaging device is high, so even if electrons are captured in the potential dip, the influence of the decrease in the pixel signal is relatively small. Not recognized as a defect. In addition, when the operating temperature of the solid-state imaging device is high, the kinetic energy of electrons increases, and the electrons trapped in the potential dip easily escape from the potential dip, so that the pixel signal does not decrease and image defects do not occur. .

  In the solid-state imaging device manufacturing process, foreign matter is reduced and the uniformity of the insulating oxide film is improved. However, it is difficult to remove the linear defects of the solid-state imaging device as described above.

  The present invention has been made in view of such circumstances, and an object of the present invention is to eliminate a linear defect extending in the vertical direction caused by the potential dip of the horizontal transfer register when the operating temperature of the solid-state imaging device is low. An object of the present invention is to provide an image pickup apparatus that detects and corrects a pixel signal of a detected linear defect, and a pixel signal correction method.

In order to achieve the above object, an image pickup apparatus according to the present invention detects a solid-state image pickup device that outputs a pixel signal and a pixel signal output from the solid-state image pickup device when the solid-state image pickup device is operated at a low temperature. Linear defect address storage means for storing the address of a linear defect extending in the vertical direction of the solid-state image sensor, operating temperature detection means for detecting the operating temperature of the solid-state image sensor, and detection by the operating temperature detection means The operation temperature of the solid-state image sensor is compared with a threshold value to determine whether the operation temperature of the solid-state image sensor is lower than the threshold value, and the operation of the solid-state image sensor by the determination means When it is determined that the temperature is low, the address of the linear defect stored in the linear defect address storage means is read, and the address output by the solid-state imaging device Characterized by comprising a correction means for correcting the pixel signal of the corresponding linear defect.
The pixel signal correction method of the present invention is a pixel signal correction method for correcting a pixel signal output from a solid-state image sensor, and is operated by the solid-state image sensor when the solid-state image sensor is operated at a low temperature. A line defect detection step for detecting a line defect extending in the vertical direction of the solid-state imaging device based on the output pixel signal, and a line for storing an address of the line defect detected in the line defect detection step A state defect address storing step, an operating temperature detecting step for detecting an operating temperature of the solid-state imaging device, and the operating temperature of the solid-state imaging device detected in the operating temperature detecting step is compared with a threshold value, and the solid-state imaging A determination step of determining whether the operating temperature of the element is lower than the threshold value, and when the operating temperature of the solid-state imaging device is determined to be low in the determination step A correction step of reading out the address of the linear defect stored in the linear defect address storing step and correcting the pixel signal of the linear defect corresponding to the address output by the solid-state imaging device. And
In addition, the imaging apparatus of the present invention extracts a plurality of effective pixels arranged in a matrix that converts incident light into signal charges and outputs them as pixel signals, and extracts pixel signals for each of the plurality of effective pixels for each column. A solid-state imaging device comprising: a plurality of effective pixel vertical transfer registers for transferring in the vertical direction; and a horizontal transfer register for transferring pixel signals transferred by the plurality of effective pixel vertical transfer registers in the horizontal direction; Linear defect address storage means for storing an address of a linear defect extending in the vertical direction of the solid-state imaging device detected based on a pixel signal output by the solid-state imaging device when operating at a low temperature, and An operating temperature detecting means for detecting an operating temperature of the solid-state imaging device, and an operating temperature of the solid-state imaging device detected by the operating temperature detecting means is compared with a threshold value; Determining means for determining whether or not the operating temperature of the solid-state image sensor is low, and the linear defect stored in the linear defect address storage means when the determining means determines that the operating temperature of the solid-state image sensor is low And a correction means for correcting the pixel signal of the linear defect corresponding to the address output by the solid-state imaging device.
In addition, the imaging apparatus of the present invention extracts a plurality of effective pixels arranged in a matrix that converts incident light into signal charges and outputs them as pixel signals, and extracts pixel signals for each of the plurality of effective pixels for each column. , An effective pixel unit having a plurality of effective pixel vertical transfer registers for transferring in the vertical direction, and a pixel signal having a pixel value of 0 arranged in one column or matrix around the effective pixel unit in the vertical direction Solid-state imaging having one or more invalid pixel vertical transfer registers, and a plurality of valid pixel vertical transfer registers and a horizontal transfer register that horizontally transfers pixel signals transferred by the one or more invalid pixel vertical transfer registers And a vertical direction of the solid-state image sensor detected based on a pixel signal output by the solid-state image sensor when the solid-state image sensor is operated at a low temperature. Linear defect address storage means for storing the address of the linear defect, operating temperature detection means for detecting the operating temperature of the solid-state image sensor, and operating temperature of the solid-state image sensor detected by the operating temperature detection means. A determination unit that determines whether or not the operating temperature of the solid-state imaging device is lower than the threshold value, and the determination unit determines that the operating temperature of the solid-state imaging device is low compared with a threshold value; Correction means for reading out the address of the linear defect stored in the linear defect address storage means and correcting the pixel signal of the linear defect corresponding to the address output by the solid-state imaging device. And
In addition, the imaging apparatus of the present invention extracts a plurality of effective pixels arranged in a matrix that converts incident light into signal charges and outputs them as pixel signals, and extracts pixel signals for each of the plurality of effective pixels for each column. An effective pixel portion having a plurality of effective pixel vertical transfer registers for transferring in the vertical direction, and a pixel signal having a pixel value of 0 arranged in a row or matrix around the effective pixel portion in the vertical direction. A solid-state imaging device having one or a plurality of invalid pixel vertical transfer registers for transferring to the effective pixel vertical transfer registers and a horizontal transfer register for transferring pixel signals transferred by the plurality of valid pixel vertical transfer registers in a horizontal direction A linear notch extending in the vertical direction of the solid-state image sensor detected based on a pixel signal output by the solid-state image sensor when the solid-state image sensor is operated at a low temperature. Linear defect address storage means for storing the address of the solid-state imaging device, operating temperature detection means for detecting the operating temperature of the solid-state imaging device, and the operating temperature of the solid-state imaging device detected by the operating temperature detection means as a threshold value A determination unit that determines whether the operating temperature of the solid-state imaging device is lower than the threshold value, and the linear defect address when the determination unit determines that the operating temperature of the solid-state imaging device is low. And a correction unit that reads the address of the linear defect stored in the storage unit and corrects the pixel signal of the linear defect corresponding to the address output by the solid-state imaging device.
The imaging apparatus according to the present invention includes a plurality of effective pixels arranged in a matrix that converts incident light into signal charges and outputs the signal as a pixel signal, and the plurality of effective pixels form a matrix together with the plurality of effective pixels. A plurality of light-shielding pixels arranged around the effective pixels and covered with a light-shielding film, and a plurality of effective / multiple pixels that extract pixel signals for each of the plurality of effective pixels and the plurality of light-shielding pixels and transfer them in the vertical direction. An effective / light-shielding pixel unit having a light-shielding pixel vertical transfer register, and one or a plurality of pixel signals arranged in a column or a matrix around the effective / light-shielding pixel unit and transferring pixel signals having a pixel value of 0 in the vertical direction An invalid pixel vertical transfer register, a plurality of valid / light-shielded pixel vertical transfer registers, and a horizontal transfer register for horizontally transferring pixel signals transferred by the one or more invalid pixel vertical transfer registers A solid-state image sensor having a vertical line of the solid-state image sensor detected based on a pixel signal output by the solid-state image sensor when the solid-state image sensor is operated at a low temperature. A linear defect address storage means for storing an address, an operating temperature detecting means for detecting the operating temperature of the solid-state image sensor, and the operating temperature of the solid-state image sensor detected by the operating temperature detecting means is compared with a threshold value. And determining means for determining whether or not the operating temperature of the solid-state imaging device is lower than the threshold, and when the determining means determines that the operating temperature of the solid-state imaging device is low, the linear defect address storage A correction method for reading the address of the linear defect stored in the means and correcting the pixel signal of the linear defect corresponding to the address output by the solid-state imaging device Characterized by comprising and.
The imaging apparatus according to the present invention includes a plurality of effective pixels arranged in a matrix that converts incident light into signal charges and outputs the signal as a pixel signal, and the plurality of effective pixels form a matrix together with the plurality of effective pixels. A plurality of light-shielding pixels arranged around the effective pixels and covered with a light-shielding film, and a plurality of effective / multiple pixels that extract pixel signals for each of the plurality of effective pixels and the plurality of light-shielding pixels and transfer them in the vertical direction. An effective / light-shielding pixel unit having a light-shielding pixel vertical transfer register, and a pixel signal having a pixel value of 0 arranged in a row or a matrix around the effective / light-shielding pixel unit in the vertical direction, One or a plurality of invalid pixel vertical transfer registers for transferring to a light-shielded pixel vertical transfer register, and a horizontal transfer register for transferring pixel signals transferred by the plurality of valid / light-shielded pixel vertical transfer registers in a horizontal direction And an address of a linear defect extending in the vertical direction of the solid-state image sensor detected based on a pixel signal output by the solid-state image sensor when the solid-state image sensor is operated at a low temperature. A linear defect address storage means for storing, an operating temperature detecting means for detecting an operating temperature of the solid-state imaging device, and comparing the operating temperature of the solid-state imaging device detected by the operating temperature detecting means with a threshold value, A determination unit that determines whether the operating temperature of the solid-state imaging device is lower than the threshold value, and when the determination unit determines that the operating temperature of the solid-state imaging device is low, the linear defect address storage unit Correction means for reading an address of the stored linear defect and correcting the pixel signal of the linear defect corresponding to the address output by the solid-state imaging device; Characterized by comprising.

According to the imaging apparatus of the present invention, first, the solid-state imaging device detected based on the pixel signal output from the solid-state imaging device when the solid-state imaging device is operated at a low temperature. The address of the linear defect extending in the vertical direction is stored in the linear defect address storage means. Next, the operating temperature of the solid-state imaging device is detected by the operating temperature detecting means, the operating temperature detected by the determining means is compared with a threshold value, and the operating temperature of the solid-state imaging device is compared with the threshold value. Determine if it is low. Next, when the determination unit determines that the operating temperature of the solid-state image sensor is low, the correction unit reads the address of the linear defect stored in the linear defect address storage unit, and the solid-state image sensor The pixel signal of the linear defect corresponding to the output address is corrected.
Therefore, when the solid-state imaging device is operated at a low temperature, the pixel signal of the linear defect output from the solid-state imaging device can be corrected, so that an image with good image quality without the linear defect can be output. it can.
According to the pixel signal correction method of the present invention, first, the solid-state imaging is performed based on the pixel signal output by the solid-state imaging device when the solid-state imaging device is operated at a low temperature in the linear defect detection step. A linear defect extending in the vertical direction of the element is detected, and the address of the linear defect detected in the linear defect detection step is stored in a linear defect address storage step. Next, an operating temperature of the solid-state imaging device is detected in an operating temperature detection step, and an operating temperature of the solid-state imaging device detected in the operating temperature detection step is compared with a threshold value in a determination step, and the solid-state imaging It is determined whether the operating temperature is lower than the threshold value. When it is determined in the determination step that the operating temperature of the solid-state image sensor is low, the address of the linear defect stored in the linear defect address storage step is read in the correction step, and the output of the solid-state image sensor The pixel signal of the linear defect corresponding to the address is corrected.
Therefore, when the solid-state imaging device is operated at a low temperature, the pixel signal of the linear defect output from the solid-state imaging device can be corrected, so that an image with good image quality without the linear defect can be output. it can.
Further, according to the imaging apparatus of the present invention, a plurality of effective pixels arranged in a matrix that converts incident light into signal charges and outputs them as pixel signals, and pixel signals for each of the plurality of effective pixels for each column. A solid-state imaging device having a plurality of effective pixel vertical transfer registers for transferring in the vertical direction and a horizontal transfer register for transferring pixel signals transferred by the plurality of effective pixel vertical transfer registers in the horizontal direction. The pixel signal of the linear defect is corrected similarly to.
Therefore, when the solid-state imaging device is operated at a low temperature, the pixel signal of the linear defect output from the solid-state imaging device can be corrected, so that an image with good image quality without the linear defect can be output. it can.
Further, according to the imaging apparatus of the present invention, a plurality of effective pixels arranged in a matrix that converts incident light into signal charges and outputs them as pixel signals, and pixel signals for each of the plurality of effective pixels for each column. An effective pixel unit having a plurality of effective pixel vertical transfer registers for transferring in the vertical direction, and a pixel signal having a pixel value of 0 arranged in a column or matrix around the effective pixel unit in the vertical direction One or more invalid pixel vertical transfer registers for transferring, and a horizontal transfer register for horizontally transferring pixel signals transferred by the plurality of valid pixel vertical transfer registers and the one or more invalid pixel vertical transfer registers The pixel signal of the linear defect similar to the above is corrected for the solid-state imaging device.
Therefore, when the solid-state imaging device is operated at a low temperature, the pixel signal of the linear defect output from the solid-state imaging device can be corrected, so that an image with good image quality without the linear defect can be output. it can.
Further, according to the imaging apparatus of the present invention, a plurality of effective pixels arranged in a matrix that converts incident light into signal charges and outputs them as pixel signals, and pixel signals for each of the plurality of effective pixels for each column. An effective pixel portion having a plurality of effective pixel vertical transfer registers for transferring in the vertical direction, and a pixel signal having a pixel value of 0 arranged in a row or matrix around the effective pixel portion in the vertical direction One or more invalid pixel vertical transfer registers that transfer and transfer to the effective pixel vertical transfer registers, and a horizontal transfer register that horizontally transfers pixel signals transferred by the plurality of effective pixel vertical transfer registers The pixel signal of the linear defect similar to the above is corrected for the image sensor.
Therefore, when the solid-state imaging device is operated at a low temperature, the pixel signal of the linear defect output from the solid-state imaging device can be corrected, so that an image with good image quality without the linear defect can be output. it can.
According to the imaging device of the present invention, a plurality of effective pixels arranged in a matrix for converting incident light into signal charges and outputting them as pixel signals, and a matrix together with the plurality of effective pixels are configured. A plurality of light-shielding pixels arranged around the plurality of effective pixels and covered with a light-shielding film, and a plurality of pixel signals taken out for each of the plurality of effective pixels and the plurality of light-shielding pixels and transferred in a vertical direction An effective / light-shielding pixel unit having an effective / light-shielding pixel vertical transfer register, and 1 or a pixel signal having a pixel value of 0 arranged in one column or a matrix around the effective / light-shielding pixel unit in the vertical direction A horizontal shift that horizontally transfers pixel signals transferred by the plurality of invalid pixel vertical transfer registers, the plurality of valid / light-shielded pixel vertical transfer registers, and the one or more invalid pixel vertical transfer registers. To solid-state imaging device having a register, it corrects the pixel signal of the same line defects as described above.
Therefore, when the solid-state imaging device is operated at a low temperature, the pixel signal of the linear defect output from the solid-state imaging device can be corrected, so that an image with good image quality without the linear defect can be output. it can.
According to the imaging device of the present invention, a plurality of effective pixels arranged in a matrix for converting incident light into signal charges and outputting them as pixel signals, and a matrix together with the plurality of effective pixels are configured. A plurality of light-shielding pixels arranged around the plurality of effective pixels and covered with a light-shielding film, and a plurality of pixel signals taken out for each of the plurality of effective pixels and the plurality of light-shielding pixels and transferred in a vertical direction An effective / light-shielding pixel portion having an effective / light-shielding pixel vertical transfer register, and a pixel signal having a pixel value of 0 arranged in a row or a matrix around the effective / light-shielding pixel portion in the vertical direction One or a plurality of invalid pixel vertical transfer registers for transferring to the valid / light-shielded pixel vertical transfer registers, and a horizontal transfer level for transferring pixel signals transferred by the plurality of valid / light-shielded pixel vertical transfer registers in the horizontal direction. To solid-state imaging device having a static, it corrects the pixel signal of the same line defects as described above.
Therefore, when the solid-state imaging device is operated at a low temperature, the pixel signal of the linear defect output from the solid-state imaging device can be corrected, so that an image with good image quality without the linear defect can be output. it can.

  In order to achieve the above object, the solid-state imaging device is operated at a low temperature, a linear defect extending in the vertical direction of the solid-state imaging device is detected based on a pixel signal output by the solid-state imaging device, and the detected linear defect is detected. Remember the address. When the imaging apparatus is used, the operating temperature of the solid-state image sensor is detected, the detected operating temperature of the solid-state image sensor is compared with a threshold value, and it is determined whether the operating temperature of the solid-state image sensor is lower than the threshold value. . When it is determined that the operating temperature of the solid-state imaging device is low, the stored linear defect address is read and the pixel signal of the linear defect corresponding to the address output by the solid-state imaging device is corrected.

Hereinafter, an image pickup apparatus and a pixel signal correction method according to Embodiment 1 of the present invention will be described with reference to the drawings.
FIG. 1 is a diagram illustrating a schematic configuration of the imaging apparatus according to the first embodiment.
As shown in FIG. 1, the imaging apparatus according to the first embodiment includes a lens 1, a diaphragm 2, a solid-state imaging device 3, a CDS (Correlated Double Sampling) circuit 4, an AD (Analog to Digital) conversion circuit 5, and a linear defect detection correction. A circuit 6, an image processing circuit 7, a CPU 8, a linear defect address ROM 9, an image RAM 10, and a recording medium 11 are provided.

  The lens 1 forms an image of incident light on the solid-state image sensor 3. The diaphragm 2 adjusts the amount of incident light of the solid-state image sensor 3 and serves as a mechanical shutter. The solid-state imaging device 3 is composed of, for example, a CCD (Charge Coupled Device), and has a plurality of pixels that convert incident light into signal charges and output them as pixel signals, and pixel signals output by the plurality of pixels. (Image) is output. The CDS circuit 4 performs correlated double sampling processing on the pixel signal output from the solid-state imaging device 3 to remove noise contained in the pixel signal. The AD conversion circuit 5 converts the analog pixel signal output from the CDS circuit 4 into a digital pixel signal. The linear defect detection / correction circuit 6 extends in the vertical direction of the image output by the solid-state image sensor 3 when the solid-state image sensor 3 is operated at a low temperature based on the digital pixel signal output by the AD conversion circuit 5. While detecting a linear defect, the pixel signal of the pixel which comprises the detected linear defect is correct | amended. The detection of the linear defect by the linear defect detection / correction circuit 6 is performed by the manufacturer at the time of inspection before shipment of the imaging device (solid-state imaging device 3).

  The image processing circuit 7 performs various image processing such as gamma correction on the pixel signal output from the linear defect correction circuit 6 and outputs the result. CPU8 controls each part of this imaging device. The linear defect address ROM 9 stores the addresses of pixels constituting the linear defect detected by the linear defect detection / correction circuit 6 at the time of inspection of the imaging device (solid-state imaging device 3). The linear defect detection / correction circuit 6 reads the address of the pixel constituting the linear defect stored in the linear defect address ROM 9 at the time of photographing after purchase of the imaging device, and the pixel signal corresponding to the read address. Correct. The image RAM 10 serves as a buffer memory for pixel signals output from the image processing circuit 7 and also serves as a working memory when the linear defect detection / correction circuit 6 detects a linear defect in the solid-state imaging device 3. The recording medium 11 is an exchangeable recording medium such as a video tape or a memory card, and records the pixel signal (image) output from the image processing circuit 7.

FIG. 2 is a diagram illustrating a configuration of a pixel portion of the solid-state imaging device illustrated in FIG.
As shown in FIG. 2, the pixel unit 20 of the solid-state imaging device 3 includes an effective pixel unit 21, a front horizontal OPB (Optical Black) unit 22, a horizontal rear OPB unit 23, a horizontal transfer register 24, and an output circuit 25.
The effective pixel unit 21 is arranged in a matrix and takes out a plurality of effective pixels (not shown) that convert incident light into signal charges and outputs them as pixel signals, and extracts pixel signals for each of the plurality of effective pixels for each column. And a plurality of columns of vertical transfer registers (not shown) for transferring in the vertical direction.
The plurality of effective pixels have a color filter of any one color of R (Red), G (Green), and B (Blue) that transmits incident light. The plurality of effective pixels receive light through a color filter, convert the incident light into a signal charge, and output it as a pixel signal. The vertical transfer register has the same number of transfer elements as the number of rows of a plurality of effective pixels, and transfers pixel signals in the vertical direction for each pixel by these transfer elements. The vertical transfer register is formed with a light shielding film that shields incident light.

The pre-horizontal OPB unit 22 takes out a plurality of light-shielded pixels (not shown) arranged in a matrix in the same row as a plurality of effective pixels, and extracts a pixel signal for each column of the plurality of light-shielded pixels and transfers them in the vertical direction. Column vertical transfer registers (not shown).
A light shielding film that shields incident light is formed in the plurality of light shielding pixels and the plurality of elementary vertical transfer registers. The plurality of light-shielding pixels have the same photoelectric conversion units as the plurality of effective pixels and output pixel signals, but light is not incident and charges not related to light are accumulated. The plurality of light shielding pixels are used to detect an optical black level during operation of the solid-state imaging device 3. The plurality of columns of vertical transfer registers have the same configuration as that of the effective pixel unit 21.

The horizontal post-OPB unit 23 includes a plurality of columns of vertical transfer registers (not shown).
A plurality of columns of vertical transfer registers are formed with a light shielding film that shields incident light. The plurality of columns of vertical transfer registers have the same configuration as that of the effective pixel unit 21. The vertical transfer registers of a plurality of columns transfer pixel signals having a pixel value of 0. The plurality of columns of vertical transfer registers are used to detect a no-signal level during operation of the solid-state imaging device 3.

  The horizontal transfer register 24 takes out pixel signals transferred in the vertical direction by a plurality of columns of vertical transfer registers of the effective pixel unit 21, the horizontal pre-OPB unit 22 and the horizontal post-OPB unit 23, and transfers them in the horizontal direction. The horizontal transfer register 24 has the same number of transfer elements as the number of columns of the vertical transfer registers of the effective pixel unit 21, the horizontal front OPB unit 22, and the horizontal post OPB unit 23, and these transfer elements send pixel signals for each pixel. Transfer horizontally. The output circuit 25 converts the pixel signal (signal charge) transferred in the horizontal direction by the horizontal transfer register 24 into a voltage and outputs the voltage to the CDS circuit 4 in the next stage.

FIG. 3 is an explanatory diagram of pixel signals output by the solid-state imaging device shown in FIG.
Here, it is assumed that light with uniform brightness is incident on the solid-state imaging device 3. In addition, the influence of the color filter of the effective pixel is ignored.
As shown in FIG. 3, when one line of the solid-state imaging device 3 is scanned, pixel signals having different levels are obtained in the effective pixel unit 21, the horizontal front OPB unit 22, and the horizontal rear OPB unit 23, respectively.
The level of the pixel signal in the blanking area without the effective pixel unit 21, the pre-horizontal OPB unit 22, and the horizontal post-OPB unit 23 is “0”. The pixel signal obtained from the post-horizontal OPB unit 23 is a non-signal level pixel signal, which is due to the dark current caused by the vertical transfer register generated by the transfer of the vertical transfer register. The pixel signal obtained from the pre-horizontal OPB unit 22 is an optical black level pixel signal, and includes a dark current caused by a sensor of a light-shielded pixel that is accumulated and converted regardless of light, and a dark current caused by a vertical transfer register. . The pixel signal obtained from the effective pixel unit 21 is a pixel signal at an optical signal level, which is derived from a light-induced signal of an effective pixel obtained by photoelectric conversion of incident light and a sensor-derived effective pixel accumulated and converted irrespective of the light. The dark current and the dark current caused by the vertical transfer register are included.

  In other words, when light is incident on the solid-state imaging device 3, the effective pixel unit 21 without the light-shielding film outputs a pixel signal at an optical signal level including a light-induced signal, a sensor-induced dark current, and a vertical transfer register-derived dark current. The horizontal front OPB unit 22 on which the light shielding film is formed outputs an optical black level pixel signal including a dark current caused by the sensor and a dark current caused by the vertical transfer register, and the horizontal post-OPB unit 23 performs the vertical transfer. A non-signal level pixel signal including dark current caused by the register is output.

FIG. 4 is a diagram illustrating an example of a linear defect of a solid-state imaging device. FIG. 5 is an explanatory diagram of pixel signals output from a solid-state imaging device having a linear defect.
When the solid-state imaging device is operated at a low temperature and low illuminance, a linear defect extending in the vertical direction of the image may occur as shown in FIG. When one line (XX ′ plane) of this image is scanned, a portion where the pixel signal level slightly drops appears in the effective pixel portion 21 as shown in FIG. This depressed portion appears in all lines and is recognized as a linear defect shown in FIG.

FIG. 6 is a diagram showing a configuration of the linear defect detection and correction circuit shown in FIG.
As described above, the linear defect detection / correction circuit 6 detects a linear defect of the solid-state imaging device 3 at the time of inspection before shipment of the imaging device, and stores it in the linear defect address ROM 9 at the time of imaging after purchase of the imaging device. The address of the pixel constituting the line defect thus read is read, and the pixel signal corresponding to the read address is corrected. Detection of linear defects is performed by operating the solid-state imaging device under conditions of low temperature and low illuminance.
As shown in FIG. 6, the linear defect detection / correction circuit 6 includes a linear defect detection means 31, a linear defect address storage control means 32, a temperature sensor 33, a temperature detection means 34, a temperature determination means 35, and a linear defect correction. Means 36 are provided.

The linear defect detection means 31 detects a linear defect based on the pixel signal output from the solid-state image sensor 3. For example, the linear defect detection circuit 31 detects a difference in signal level (pixel signal) between pixels adjacent in the horizontal direction, and determines that the defect is a linear defect when the difference in signal level is equal to or greater than a threshold value.
Further, the linear defect detection circuit 31 can be configured to cumulatively add pixel signals for one column in an image and compare the cumulatively added pixel signals to detect a linear defect. Further, the linear defect detection circuit 31 cumulatively adds pixel signals at the same position of a plurality of images output from the solid-state imaging device 3, and compares the cumulatively added pixel signals to detect a linear defect. Can be configured. In these cases, the linear defect can be detected with higher accuracy. Note that the image RAM 10 is used for cumulative addition of pixel signals.

  The linear defect address storage control means 32 stores the address of the pixel constituting the on-line defect detected by the linear defect detection means 31 in the linear defect address ROM 9. The temperature sensor 33 directly measures the temperature of the solid-state imaging device 3 and outputs a signal corresponding to the measured temperature. The temperature detection unit 34 specifies the operating temperature of the solid-state imaging device 3 based on the signal output from the temperature sensor 33. The temperature determination unit 35 compares the operating temperature of the solid-state imaging device 3 specified by the temperature detection unit 34 with a threshold value, and determines whether the operating temperature of the solid-state imaging device 3 is low.

  The linear defect correcting means 36 reads the address of the pixel constituting the on-line defect stored in the linear defect address ROM 9 when the temperature determining means 35 determines that the operating temperature of the solid-state imaging device 3 is low, and solid-state imaging The pixel signal of the linear defect corresponding to the address output by the element 3 is corrected. For example, the linear defect correction unit 36 corrects a defective pixel (a pixel constituting a linear defect) based on peripheral pixels. For example, the pixel signal of the defective pixel is replaced with the average value or median value (median value) of the pixel signals of a plurality of peripheral pixels.

Next, the operation of the imaging apparatus according to the first embodiment will be described.
When light enters the solid-state image sensor 3 through the lens 1 and the diaphragm 2, charges corresponding to the light amount are accumulated by the plurality of effective pixels of the effective pixel unit 21 of the pixel unit 20 of the solid-state image sensor 3. At the same time, charges are accumulated in the plurality of light-shielding pixels of the front horizontal OPB unit 22 regardless of light. Next, the signal charges accumulated in the plurality of effective pixels are taken out by the respective vertical transfer registers as pixel signals, and the signal charges accumulated in the plurality of light-shielded pixels are taken out by the respective vertical transfer registers as pixel signals, Forwarded in the direction. At the same time, a pixel signal having a pixel value “0” is transferred in the vertical direction by the vertical transfer register of the post-horizontal OPB unit 23. Then, the pixel signals transferred in the vertical direction by the vertical transfer registers of the effective pixel unit 21, the pre-horizontal OPB unit 22 and the horizontal post-OPB unit 23 are transferred in the horizontal direction by the horizontal transfer register 23, and the output circuit 25 The signal (signal charge) is converted into a voltage and output to the CDS circuit 4 at the next stage.

  The pixel signal output from the solid-state imaging device 3 is denoised by the CDS circuit 4, converted from an analog pixel signal to a digital pixel signal by the AD conversion circuit 5, and input to the linear defect detection correction circuit 6.

Here, a method for correcting a pixel signal having a linear defect will be described with reference to steps S1 to S5.
At the time of inspection before shipment of the imaging device, the linear defect of the solid-state imaging device 3 is detected by the linear defect detection means 31 of the linear defect detection circuit 6. Specifically, the difference between the signal levels (pixel signals) of pixels adjacent in the horizontal direction is detected by the linear defect detection means 31, and when the difference between the signal levels is equal to or greater than a threshold value, it is determined as a linear defect. (Step S1). Next, the address of the pixel constituting the linear defect detected by the linear defect detection means 31 is stored in the linear defect address ROM 9 by the linear defect address storage means 32 (step S2).

  At the time of imaging after shipment of the imaging device, the operating temperature of the solid-state imaging device 3 is specified by the temperature detection unit 34 based on the signal measured by the temperature sensor 33 of the linear defect detection circuit 6 (step S3). The operating temperature is compared with a threshold value by the temperature determining means 34, and it is determined whether or not the operating temperature of the solid-state imaging device 3 is low (step S4).

  When the temperature determining unit 34 determines that the operating temperature of the solid-state imaging device 3 is low, the linear defect correcting unit 36 reads the addresses of the pixels constituting the on-line defect stored in the linear defect address ROM 9 and reads the solid state. The pixel signal of the linear defect corresponding to the address output by the image sensor 3 is corrected. Specifically, the pixel signals of the pixels constituting the linear defect are replaced with the average value or the median value (median value) of the pixel signals of a plurality of peripheral pixels (step S5).

  The pixel signal in which the linear defect is corrected is output to the image processing circuit 7 at the next stage and subjected to image processing such as gamma correction. The pixel signal output by the image processing circuit 7 is stored in the image RAM 10 and then output externally or recorded on the recording medium 11.

  As described above, according to the imaging apparatus of the first embodiment, the linear defect detection and correction circuit 6 detects the linear defect of the solid-state imaging device 3 and corrects the pixel signal of the pixels constituting the linear defect. Therefore, when the solid-state imaging device 3 is operated at a low temperature, the pixel signal of the linear defect output from the solid-state imaging device 3 can be corrected, so that an image with good image quality without the linear defect can be obtained. Can do.

  Further, since the linear defect detection means 31 is provided in the linear defect detection / correction circuit 6, it is not necessary to take out pixel signals from the external terminals of the imaging device one by one and detect the linear defect by a dedicated detection device. Therefore, it is possible to easily detect a linear defect.

  Moreover, the temperature sensor 33 is provided and the temperature of the solid-state image sensor 3 is measured. Therefore, the temperature of the solid-state image sensor 3 can be easily measured with a simple configuration.

FIG. 7 is a diagram showing a modification of the pixel portion of the solid-state imaging device shown in FIG.
In the pixel unit 20 of the solid-state imaging device 3 according to the first embodiment, the horizontal front OPB unit 22 and the horizontal rear OPB unit 23 that are adjacent to the effective pixel unit 21 in the horizontal direction are provided, and the horizontal front OPB unit 22 includes a plurality of light shielding pixels. The horizontal post-OPB unit 23 is formed of a plurality of columns of vertical registers, but the positions of the horizontal front OPB unit 22 and the horizontal post-OPB unit 23 may be reversed. In other words, as shown in FIG. 7, the horizontal front OPB unit 26 and the horizontal rear OPB unit 27 adjacent to the effective pixel unit 21 in the horizontal direction are provided, and the horizontal front OPB unit 26 is configured by a plurality of columns of vertical registers. The rear OPB unit 27 may be composed of a plurality of light shielding pixels and a plurality of columns of vertical transfer registers.

FIG. 8 is a diagram illustrating a configuration of the linear defect detection correction circuit 40 of the imaging apparatus according to the second embodiment. FIG. 9 is a diagram showing the relationship between the dark current resulting from the vertical transfer register and the operating temperature of the solid-state imaging device.
As shown in FIG. 8, the imaging apparatus of the second embodiment is obtained by replacing the linear defect detection and correction circuit 6 of the imaging apparatus of the first embodiment shown in FIG. 1 with a linear defect detection and correction circuit 40. The linear defect detection / correction circuit 40 according to the second embodiment is obtained by replacing the temperature sensor 33 and the temperature detection means 34 of the linear defect detection / correction circuit 6 according to the first embodiment shown in FIG. is there.
In addition, the other part of the imaging device of Example 2 and the other part of the linear defect detection correction circuit 40 shown in FIG. 8 are the same as the components of the imaging device and the linear defect detection correction circuit 6 of Example 1. Therefore, the description thereof is omitted.

The temperature detection unit 41 calculates the operating temperature of the solid-state image sensor 3 based on the pixel signal output from the solid-state image sensor 3. Specifically, the temperature detection unit 41 uses a pixel signal obtained from the horizontal post-OPB unit 23 of the pixel unit 20 shown in FIG.
The pixel signal obtained from the horizontal post-OPB unit 23 includes the dark current caused by the vertical transfer register as described above. The dark current caused by the vertical transfer register has a linear relationship with the operating temperature of the solid-state imaging device 3 as shown in FIG. For this reason, the operating temperature of the solid-state image sensor 3 can be calculated based on a non-signal level pixel signal including dark current caused by the vertical transfer register.

Specifically, an operation in which the dark current caused by the vertical transfer register based on the pixel signal transferred by the vertical transfer register of the post-horizontal OPB unit 23 and output from the solid-state image sensor 3 is associated with the operating temperature of the solid-state image sensor 3. For example, the table is stored in the linear defect address ROM 9 shown in FIG. 1 together with the address of the linear defect.
The temperature detecting means 41 calculates the operation temperature of the solid-state image pickup device 3 corresponding to the pixel signal transferred by the vertical transfer register of the post-horizontal OPB unit 23 and output from the solid-state image pickup device 3 and stored in the linear defect address ROM 9. Calculate based on the table. Since the pixel signal in the calculation table of the linear defect address ROM 9 takes a jump value, if the interpolation calculation is performed on the pixel signal output from the solid-state image pickup device 3 by interpolation, the operating temperature of the solid-state image pickup device 3 is more accurate. Can be calculated.

  As described above, according to the imaging apparatus of the second embodiment, the operating temperature of the solid-state imaging device 3 is calculated based on the pixel signal of the horizontal post-OPB unit 23 output from the solid-state imaging device 3 by the temperature detection unit 41. Therefore, since the operating temperature of the solid-state image sensor 3 can be obtained with high accuracy, the linear defect can be reliably corrected.

FIG. 10 is a diagram illustrating a configuration of the linear defect detection correction circuit 50 of the imaging apparatus according to the third embodiment. FIG. 11 is a diagram illustrating the relationship between the dark current caused by the sensor and the operating temperature of the solid-state imaging device.
As illustrated in FIG. 10, the imaging device of the third embodiment is obtained by replacing the linear defect detection and correction circuit 40 of the imaging device of the second embodiment with a linear defect detection and correction circuit 50. The linear defect detection / correction circuit 50 of the third embodiment is obtained by replacing the temperature detection means 41 of the linear defect detection / correction circuit 40 of the second embodiment shown in FIG.
The other parts of the imaging device of the third embodiment and the other parts of the linear defect detection / correction circuit 50 shown in FIG. 10 are the same as the components of the imaging device and the linear defect detection / correction circuit 40 of the second embodiment. Therefore, the description thereof is omitted.

The temperature detection means 50 uses pixel signals obtained from the pre-horizontal OPB unit 22 and the post-horizontal OPB unit 23 of the pixel unit 20 shown in FIG.
The pixel signal obtained from the horizontal post-OPB unit 23 includes the dark current caused by the vertical transfer register as described above. As described above, the pixel signal obtained from the pre-horizontal OPB unit 22 includes the dark current caused by the sensor and the dark current caused by the vertical transfer register, which are accumulated and converted regardless of light. The dark current resulting from this sensor has a linear relationship with the operating temperature of the solid-state imaging device 3, as shown in FIG. Therefore, the difference between the optical black level pixel signal including the dark current caused by the sensor of the light-shielded pixel and the dark current caused by the vertical transfer register and the non-signal level pixel signal including the dark current caused by the vertical transfer register is obtained. The operating temperature of the solid-state imaging device 3 can be calculated based on the obtained difference, that is, the dark current caused by the sensor.

Specifically, based on the pixel signals transferred by the vertical transfer registers of the horizontal front OPB unit 22 and the horizontal rear OPB unit 23 and output from the solid-state imaging device 3, the pixel signal of the optical black level and the no signal are output. A difference between the pixel signal of the level is obtained, and a calculation table in which the difference and the operating temperature of the solid-state imaging device 3 are associated is stored in the linear defect address ROM 9 shown in FIG. deep.
The temperature detection means 50 receives the pixel signal of the optical black level and the non-signal level from the pixel signal transferred by the vertical transfer registers of the front horizontal OPB unit 22 and the horizontal rear OPB unit 23 and output from the solid-state imaging device 3. The difference from the pixel signal is calculated, and the operating temperature of the solid-state imaging device 3 corresponding to the calculated difference is calculated based on the calculation table stored in the linear defect address ROM 9. Since the difference in the calculation table of the linear defect address ROM 9 takes a jump value, if the interpolation calculation is performed on the calculated difference by interpolation, the operating temperature of the solid-state imaging device 3 can be calculated with higher accuracy.

  As described above, according to the imaging apparatus of the third embodiment, the operation of the solid-state imaging device 3 based on the pixel signals of the horizontal front OPB unit 22 and the horizontal rear OPB unit 23 output from the solid-state imaging device 3 by the temperature detection unit 50. Calculate the temperature. Therefore, since the operating temperature of the solid-state image sensor 3 can be obtained with high accuracy, the linear defect can be reliably corrected.

  In the third embodiment, the operating temperature of the solid-state imaging device 3 is calculated based on the pixel signals of the front horizontal OPB unit 22 and the horizontal rear OPB unit 23 shown in FIG. For this reason, a well-known optical black region can be used. On the other hand, a dedicated OPB unit for calculating the operating temperature of the solid-state imaging device 3 may be provided.

FIGS. 12-14 is a figure which shows the structural example of the pixel part 20 of the solid-state image sensor of Example 4. As shown in FIG.
In FIG. 12, the optical black level unit 61 having a plurality of light-shielding pixels and a plurality of columns of vertical transfer registers and the non-signal level unit 62 having a plurality of columns of vertical transfer registers are adjacent to each other in the horizontal direction of the horizontal front OPB unit 22. It is an example arranged side by side.
The optical black level unit 61 only needs to have at least one column of light-shielded pixels and a vertical transfer register, and the no-signal level unit 62 only needs to have at least one column of a vertical transfer register.

13 shows that the optical black level unit 61 having a plurality of light-shielding pixels and a plurality of columns of vertical transfer registers and the no-signal level unit 62 having a plurality of columns of vertical transfer registers are adjacent to each other in the horizontal direction of the horizontal rear OPB unit 23. It is an example arranged side by side.
The optical black level unit 61 only needs to have at least one column of light-shielded pixels and a vertical transfer register, and the no-signal level unit 62 only needs to have at least one column of a vertical transfer register.

FIG. 14 shows an optical black level portion 63 having a plurality of light-shielded pixels and a plurality of columns of vertical transfer registers, and a non-signal level portion 64 having a plurality of columns of vertical transfer registers. In this example, the rear OPB unit 23 is arranged so as to be adjacent to each other in the vertical direction.
The optical black level unit 63 only needs to have at least one row of light-shielding pixels and a vertical transfer register (transfer element), and the no-signal level unit 64 has at least one row of vertical transfer register (transfer element). do it.

  The plurality of light-shielding pixels of the optical black level portions 61 and 63 shown in FIGS. 12 to 13 can be configured to generate a larger dark current than other portions. As a result, it is possible to easily detect the dark current caused by the sensor, so that the operating temperature of the solid-state imaging device 3 can be obtained with high accuracy.

As described above, according to the imaging apparatus of the fourth embodiment, the dedicated OPB part (optical black level part 61 or 63) that easily generates dark current is provided, and the dark current caused by the sensor can be easily detected. Therefore, the operating temperature of the solid-state imaging device 3 can be obtained with high accuracy.
As in the image pickup apparatus of the second embodiment, a dedicated OPB portion (only the no-signal level portion 62 or 64) that easily generates dark current is provided to facilitate detection of dark current caused by the vertical transfer register, and solid-state imaging. The operating temperature of the element 3 can be obtained with high accuracy.

1 is a diagram illustrating a schematic configuration of an imaging apparatus according to Embodiment 1. FIG. It is a figure which shows the structure of the pixel part of the solid-state image sensor shown by FIG. It is explanatory drawing of the pixel signal output by the solid-state image sensor shown by FIG. It is a figure which shows an example of the linear defect of a solid-state image sensor. It is explanatory drawing of the pixel signal output by the solid-state image sensor which has a linear defect. It is a figure which shows the structure of the linear defect detection correction circuit shown by FIG. It is a figure which shows the modification of the pixel part of the solid-state image sensor shown by FIG. FIG. 6 is a diagram illustrating a configuration of a linear defect detection / correction circuit 40 of the imaging apparatus according to the second embodiment. It is a figure which shows the relationship between the dark current resulting from a vertical transfer register, and the operating temperature of a solid-state image sensor. FIG. 10 is a diagram illustrating a configuration of a linear defect detection / correction circuit 50 of an imaging apparatus according to a third embodiment. It is a figure which shows the relationship between the dark current resulting from a sensor, and the operating temperature of a solid-state image sensor. FIG. 10 is a diagram illustrating a configuration example of a pixel unit of a solid-state imaging element according to a fourth embodiment. FIG. 10 is a diagram illustrating a configuration example of a pixel unit of a solid-state imaging element according to a fourth embodiment. FIG. 10 is a diagram illustrating a configuration example of a pixel unit of a solid-state imaging element according to a fourth embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Lens, 2 ... Diaphragm, 3 ... Solid-state image sensor, 4 ... CDS circuit, 5 ... AD conversion circuit, 6 ... Linear defect detection correction circuit, 7 ... Image processing circuit, 8 ... CPU, 9 ... Linear defect address ROM, 10 ... Image RAM, 20 ... Pixel unit 20, 21 ... Effective pixel unit, 22 ... Horizontal front OPB unit, 23 ... Horizontal rear OPB unit, 24 ... Horizontal transfer register, 25... Output circuit, 31... Linear defect detection means, 32... Linear defect address storage control means, 33 ... temperature sensor, 34. 36: Linear defect correction means.

Claims (35)

A solid-state image sensor that outputs pixel signals;
A linear defect address storage for storing an address of a linear defect extending in the vertical direction of the solid-state imaging device detected based on a pixel signal output by the solid-state imaging device when the solid-state imaging device is operated at a low temperature Means,
An operating temperature detecting means for detecting an operating temperature of the solid-state imaging device;
A determination unit that compares the operating temperature of the solid-state imaging device detected by the operating temperature detection unit with a threshold value, and determines whether or not the operating temperature of the solid-state imaging device is lower than the threshold value;
When the determination unit determines that the operating temperature of the solid-state image sensor is low, the address of the linear defect stored in the linear defect address storage unit is read and corresponds to the address output by the solid-state image sensor Correcting means for correcting the pixel signal of the linear defect.
An imaging apparatus characterized by that.   The imaging apparatus according to claim 1, further comprising: a linear defect detection unit configured to detect the linear defect of the solid-state image sensor based on a pixel signal output from the solid-state image sensor. A pixel signal correction method for correcting a pixel signal output by a solid-state imaging device,
A linear defect detection step for detecting a linear defect extending in a vertical direction of the solid-state image sensor based on a pixel signal output by the solid-state image sensor when the solid-state image sensor is operated at a low temperature;
A linear defect address storage step for storing an address of the linear defect detected in the linear defect detection step;
An operating temperature detecting step for detecting an operating temperature of the solid-state imaging device;
A determination step of comparing the operating temperature of the solid-state imaging device detected in the operating temperature detection step with a threshold value and determining whether the operating temperature of the solid-state imaging device is lower than the threshold value;
When it is determined in the determination step that the operating temperature of the solid-state image sensor is low, the address of the linear defect stored in the linear defect address storage step is read and corresponds to the address output by the solid-state image sensor And a correction step of correcting the pixel signal of the linear defect. A plurality of effective pixels arranged in a matrix that converts incident light into a signal charge and outputs it as a pixel signal, and a plurality of effective pixels that are extracted for each column from the plurality of effective pixels and transferred in the vertical direction A solid-state imaging device having a pixel vertical transfer register and a horizontal transfer register for transferring a pixel signal transferred by the plurality of effective pixel vertical transfer registers in a horizontal direction;
A linear defect address storage for storing an address of a linear defect extending in the vertical direction of the solid-state imaging device detected based on a pixel signal output by the solid-state imaging device when the solid-state imaging device is operated at a low temperature Means,
An operating temperature detecting means for detecting an operating temperature of the solid-state imaging device;
A determination unit that compares the operating temperature of the solid-state imaging device detected by the operating temperature detection unit with a threshold value, and determines whether or not the operating temperature of the solid-state imaging device is lower than the threshold value;
When the determination unit determines that the operating temperature of the solid-state image sensor is low, the address of the linear defect stored in the linear defect address storage unit is read and corresponds to the address output by the solid-state image sensor Correcting means for correcting the pixel signal of the linear defect.
An imaging apparatus characterized by that.   The imaging apparatus according to claim 4, further comprising a linear defect detection unit that detects the linear defect of the solid-state image sensor based on a pixel signal output from the solid-state image sensor.   The linear defect detecting means includes cumulative addition means for cumulatively adding pixel signals for one column transferred by each of the plurality of effective pixel vertical transfer registers output from the solid-state imaging device, 5. The imaging apparatus according to claim 4, wherein the linear defect is detected based on the pixel signals for the one column accumulated and added by an adding means.   The linear defect detection means includes cumulative addition means for cumulatively adding pixel signals at the same position of a plurality of images output from the solid-state imaging device, and the plurality of the plurality of sheets cumulatively added by the cumulative addition means. 6. The imaging apparatus according to claim 5, wherein the linear defect is detected based on a pixel signal at the same position.   The imaging apparatus according to claim 4, wherein the operating temperature detection unit includes a temperature sensor that detects a temperature of the solid-state imaging device.   The imaging apparatus according to claim 4, wherein the correction unit corrects the pixel signal of the linear defect based on a pixel signal of a peripheral pixel of the pixel constituting the linear defect. A plurality of effective pixels arranged in a matrix that converts incident light into a signal charge and outputs it as a pixel signal, and a plurality of effective pixels that are extracted for each column from the plurality of effective pixels and transferred in the vertical direction An effective pixel unit having a pixel vertical transfer register;
One or a plurality of invalid pixel vertical transfer registers that are arranged in a column or matrix around the effective pixel portion and transfer a pixel signal having a pixel value of 0 in the vertical direction;
A solid-state imaging device having a horizontal transfer register that horizontally transfers pixel signals transferred by the plurality of effective pixel vertical transfer registers and the one or more invalid pixel vertical transfer registers;
A linear defect address storage for storing an address of a linear defect extending in the vertical direction of the solid-state imaging device detected based on a pixel signal output by the solid-state imaging device when the solid-state imaging device is operated at a low temperature Means,
An operating temperature detecting means for detecting an operating temperature of the solid-state imaging device;
A determination unit that compares the operating temperature of the solid-state imaging device detected by the operating temperature detection unit with a threshold value, and determines whether or not the operating temperature of the solid-state imaging device is lower than the threshold value;
When the determination unit determines that the operating temperature of the solid-state image sensor is low, the address of the linear defect stored in the linear defect address storage unit is read and corresponds to the address output by the solid-state image sensor Correcting means for correcting the pixel signal of the linear defect.
An imaging apparatus characterized by that.   The imaging apparatus according to claim 10, wherein the invalid pixel vertical transfer register is configured to generate a larger dark current than the effective pixel vertical transfer register.   The image pickup apparatus according to claim 10, wherein the invalid pixel vertical transfer register forms an optical black region for detecting a black level of a pixel signal.   The imaging apparatus according to claim 10, further comprising a linear defect detection unit that detects the linear defect of the solid-state imaging element.   The linear defect detecting means includes cumulative addition means for cumulatively adding pixel signals for one column transferred by each of the plurality of effective pixel vertical transfer registers output from the solid-state imaging device, 14. The imaging apparatus according to claim 13, wherein the linear defect is detected based on the pixel signals for the one column accumulated and added by the adding means.   The linear defect detection means includes cumulative addition means for cumulatively adding pixel signals at the same position of a plurality of images output from the solid-state imaging device, and the plurality of the plurality of sheets cumulatively added by the cumulative addition means. The imaging apparatus according to claim 13, wherein the linear defect is detected based on a pixel signal at the same position.   The imaging apparatus according to claim 10, wherein the operating temperature detection unit includes a temperature sensor that detects a temperature of the solid-state imaging device.   The operating temperature detecting means has operating temperature calculating means for calculating the operating temperature of the solid-state image sensor based on a pixel signal transferred by the invalid pixel vertical transfer register and output by the solid-state image sensor. The imaging device according to claim 10. The operating temperature detecting means is a calculation table in which a dark current caused by a vertical transfer register based on a pixel signal transferred by the invalid pixel vertical transfer register and output from the solid-state image sensor is associated with an operating temperature of the solid-state image sensor A calculation table storage means for storing
18. The imaging apparatus according to claim 17, wherein the operating temperature calculation unit calculates an operating temperature of the solid-state imaging device based on a calculation table stored in the calculation table storage unit.   The imaging apparatus according to claim 7, wherein the correction unit corrects the pixel signal of the linear defect based on a pixel signal of a peripheral pixel of the pixel constituting the linear defect. A plurality of effective pixels arranged in a matrix that converts incident light into a signal charge and outputs it as a pixel signal, and a plurality of effective pixels that are extracted for each column from the plurality of effective pixels and transferred in the vertical direction An effective pixel unit having a pixel vertical transfer register;
One or a plurality of invalid pixel vertical transfer registers arranged in a row or matrix around the effective pixel portion and transferring a pixel signal having a pixel value of 0 in the vertical direction to the effective pixel vertical transfer register;
A solid-state imaging device having a horizontal transfer register that horizontally transfers pixel signals transferred by the plurality of effective pixel vertical transfer registers;
A linear defect address storage for storing an address of a linear defect extending in the vertical direction of the solid-state imaging device detected based on a pixel signal output by the solid-state imaging device when the solid-state imaging device is operated at a low temperature Means,
An operating temperature detecting means for detecting an operating temperature of the solid-state imaging device;
A determination unit that compares the operating temperature of the solid-state imaging device detected by the operating temperature detection unit with a threshold value, and determines whether or not the operating temperature of the solid-state imaging device is lower than the threshold value;
When the determination unit determines that the operating temperature of the solid-state image sensor is low, the address of the linear defect stored in the linear defect address storage unit is read and corresponds to the address output by the solid-state image sensor Correcting means for correcting the pixel signal of the linear defect.
An imaging apparatus characterized by that.   21. The imaging apparatus according to claim 20, further comprising a linear defect detection unit that detects the linear defect of the solid-state imaging device.   The operating temperature detecting means has operating temperature calculating means for calculating the operating temperature of the solid-state image sensor based on a pixel signal transferred by the invalid pixel vertical transfer register and output by the solid-state image sensor. The imaging device according to claim 20. The operating temperature detecting means is a calculation table in which a dark current caused by a vertical transfer register based on a pixel signal transferred by the invalid pixel vertical transfer register and output from the solid-state image sensor is associated with an operating temperature of the solid-state image sensor A calculation table storage means for storing
23. The imaging apparatus according to claim 22, wherein the operating temperature calculation unit calculates an operating temperature of the solid-state imaging device based on a calculation table stored in the calculation table storage unit. A plurality of effective pixels arranged in a matrix for converting incident light into signal charges and outputting them as pixel signals, and arranged around the plurality of effective pixels so as to form a matrix together with the plurality of effective pixels, A plurality of light-shielding pixels covered with a light-shielding film, and a plurality of effective pixels and a plurality of effective / light-shielding pixel vertical transfer registers that extract pixel signals for each column for the plurality of effective pixels and the plurality of light-shielding pixels and transfer them in the vertical direction / Shading pixel part,
One or a plurality of invalid pixel vertical transfer registers arranged in a column or matrix around the effective / light-shielding pixel portion and transferring a pixel signal having a pixel value of 0 in the vertical direction;
A solid-state imaging device having a horizontal transfer register that horizontally transfers pixel signals transferred by the plurality of valid / light-shielded pixel vertical transfer registers and the one or more invalid pixel vertical transfer registers;
A linear defect address storage for storing an address of a linear defect extending in the vertical direction of the solid-state imaging device detected based on a pixel signal output by the solid-state imaging device when the solid-state imaging device is operated at a low temperature Means,
An operating temperature detecting means for detecting an operating temperature of the solid-state imaging device;
A determination unit that compares the operating temperature of the solid-state imaging device detected by the operating temperature detection unit with a threshold value, and determines whether or not the operating temperature of the solid-state imaging device is lower than the threshold value;
When the determination unit determines that the operating temperature of the solid-state image sensor is low, the address of the linear defect stored in the linear defect address storage unit is read and corresponds to the address output by the solid-state image sensor Correcting means for correcting the pixel signal of the linear defect.
An imaging apparatus characterized by that. The plurality of effective / light-shielded pixel vertical transfer registers respectively include at least one pixel transfer unit of an effective pixel transfer unit that extracts pixel signals of the plurality of effective pixels and a light-shielded pixel transfer unit that extracts image signals of the plurality of light-shielded pixels. Have
25. The imaging apparatus according to claim 24, wherein the light-shielding pixel transfer unit is configured to generate a larger dark current than the effective pixel transfer unit. The plurality of effective / light-shielded pixel vertical transfer registers respectively include at least one pixel transfer unit of an effective pixel transfer unit that extracts pixel signals of the plurality of effective pixels and a light-shielded pixel transfer unit that extracts image signals of the plurality of light-shielded pixels. Have
The imaging device according to claim 24, wherein the invalid pixel vertical transfer register is configured to generate a dark current more easily than the effective pixel transfer unit.   The imaging device according to claim 24, wherein the plurality of light-shielding pixels constitute an optical black region for detecting a black level of a pixel signal.   26. The image pickup apparatus according to claim 25, wherein the invalid pixel vertical transfer register forms an optical black region for detecting a black level of a pixel signal.   25. The imaging apparatus according to claim 24, further comprising a linear defect detection unit that detects the linear defect of the solid-state imaging device. The plurality of effective / light-shielded pixel vertical transfer registers includes at least one pixel transfer unit including an effective pixel transfer unit that extracts pixel signals of the plurality of effective pixels and a light-shielded pixel transfer unit that extracts image signals of the plurality of light-shielded pixels. And
The operating temperature detecting means is extracted by the light-shielded pixel transfer unit, and is output by the solid-state image sensor and the pixel signals of the plurality of light-shielded pixels output by the solid-state image sensor and output by the invalid pixel vertical transfer register. Sensor-induced dark current calculation means for calculating a sensor-induced dark current that is a difference value from the pixel signal that has been obtained,
The image pickup apparatus according to claim 24, further comprising an operation temperature calculation unit that calculates an operation temperature of the solid-state image sensor based on the sensor-induced dark current calculated by the sensor-induced dark current calculation unit. The operating temperature detecting unit has a calculation table storage unit that stores a calculation table in which a sensor-induced dark current calculated by the sensor-induced dark current calculation unit and an operation temperature of the solid-state imaging device are associated with each other.
31. The imaging apparatus according to claim 30, wherein the operating temperature calculation unit calculates an operating temperature of the solid-state imaging device based on a calculation table stored in the calculation table storage unit. A plurality of effective pixels arranged in a matrix for converting incident light into signal charges and outputting them as pixel signals, and arranged around the plurality of effective pixels so as to form a matrix together with the plurality of effective pixels, A plurality of light-shielding pixels covered with a light-shielding film, and a plurality of effective pixels and a plurality of effective / light-shielding pixel vertical transfer registers that extract pixel signals for each column for the plurality of effective pixels and the plurality of light-shielding pixels and transfer them in the vertical direction / Shading pixel part,
One or a plurality of invalid pixel verticals arranged in a row or matrix around the effective / light-shielded pixel portion and transferring a pixel signal having a pixel value of 0 in the vertical direction to the valid / light-shielded pixel vertical transfer register A transfer register;
A solid-state imaging device having a horizontal transfer register that horizontally transfers pixel signals transferred by the plurality of effective / light-shielded pixel vertical transfer registers;
A linear defect address storage for storing an address of a linear defect extending in the vertical direction of the solid-state imaging device detected based on a pixel signal output by the solid-state imaging device when the solid-state imaging device is operated at a low temperature Means,
An operating temperature detecting means for detecting an operating temperature of the solid-state imaging device;
A determination unit that compares the operating temperature of the solid-state imaging device detected by the operating temperature detection unit with a threshold value, and determines whether or not the operating temperature of the solid-state imaging device is lower than the threshold value;
When the determination unit determines that the operating temperature of the solid-state image sensor is low, the address of the linear defect stored in the linear defect address storage unit is read and corresponds to the address output by the solid-state image sensor Correcting means for correcting the pixel signal of the linear defect.
An imaging apparatus characterized by that.   33. The imaging apparatus according to claim 32, further comprising linear defect detection means for detecting the linear defect of the solid-state imaging device. The plurality of effective / light-shielded pixel vertical transfer registers respectively include at least one pixel transfer unit of an effective pixel transfer unit that extracts pixel signals of the plurality of effective pixels and a light-shielded pixel transfer unit that extracts image signals of the plurality of light-shielded pixels. Have
The operating temperature detecting means is extracted by the light-shielded pixel transfer unit, and is output by the solid-state image sensor and the pixel signals of the plurality of light-shielded pixels output by the solid-state image sensor and output by the invalid pixel vertical transfer register. Sensor-induced dark current calculation means for calculating a sensor-induced dark current that is a difference value from the pixel signal that has been obtained,
33. The imaging apparatus according to claim 32, further comprising operating temperature calculation means for calculating an operating temperature of the solid-state imaging device based on the sensor-induced dark current calculated by the sensor-induced dark current calculation means. The operating temperature detecting unit has a calculation table storage unit that stores a calculation table in which a sensor-induced dark current calculated by the sensor-induced dark current calculation unit and an operation temperature of the solid-state imaging device are associated with each other.
35. The imaging apparatus according to claim 34, wherein the operating temperature calculation unit calculates an operating temperature of the solid-state imaging device based on a calculation table stored in the calculation table storage unit.

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