JP2005300999A - Pattern simulation method, program therefor, medium recorded with the program, and apparatus therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a CAD software for designing a mask of a division exposure system for easily producing a mask pattern. <P>SOLUTION: When a mask pattern for a division exposure method in a second or succeeding step is to be formed, an auxiliary layer pattern 7 is drawn larger than a shot pattern 3 and smaller than a panel pattern 2. After the shot pattern 3 is stored, the shot pattern is disposed in a shot pattern cell of the mask pattern to produce mask data. The feature of the panel pattern 2 is changed in the second and succeeding steps of producing the mask pattern. If changes are within the auxiliary layer pattern 7 stored on forming the first mask pattern, changes in the cell of the mask pattern stored on producing the first mask pattern are unnecessary, which makes reproduction of exposure data unnecessary. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a pattern simulation method for simulating an exposure pattern to be formed on a substrate, a program thereof, a medium on which the program is recorded, and an apparatus thereof.

  Conventionally, a liquid crystal display device has wirings such as scanning lines and signal lines, electrodes such as pixel electrodes, and switching elements such as thin film transistors. These wirings, electrodes, and switching elements are formed by forming a thin film that is a conductor or a dielectric, and then applying a photoresist on the thin film. Thereafter, the coated photoresist is exposed through a mask having a predetermined pattern, and then the exposed photoresist is developed. Further, it is formed by repeating processes such as etching to remove the exposed thin film after the photoresist is removed.

  On the other hand, as a substrate for a liquid crystal display device, a glass substrate having a size of about several tens of cm to several m square is used. For this reason, as an exposure apparatus for exposing the glass substrate, there is a large-sized exposure apparatus for a liquid crystal display device, but a small-sized mask for a conventional semiconductor exposure apparatus is often used. When exposing a panel larger than the mask, a division exposure method is used in which one panel is divided into a plurality of areas for exposure. As a mask for this divided exposure method, first, layout data for a display device for one liquid crystal panel is first created, and then the exposure data, which is an area for exposing this layout data in one shot, is cut out into a mask pattern. It is arranged.

  In this divided exposure method, when there is a dividing line on the screen, when a mask misalignment occurs during exposure due to the horizontal boundary line and the vertical boundary line dividing the glass substrate in the horizontal direction and the vertical direction, respectively. In addition, the seam may be visually recognized. In particular, when a shift occurs in a straight boundary line, the seam is more easily recognized, so that the quality of the display screen displayed on the liquid crystal display device is deteriorated. As countermeasures, there are a method of forming the boundary line of the seam in a zigzag manner, and a method of buffering the change gradient of the boundary characteristic of the seam to make it difficult to visually recognize the seam.

Further, in this divided exposure method, an exposure pattern is formed with the conductor and dielectric layer of the entire liquid crystal panel and then placed on the glass substrate. Thereafter, a shot pattern indicating a region to be exposed in one shot is drawn on the glass substrate. Further, the pattern on the glass substrate is cut out along the shot pattern to create a shot cell which is a new part. At this time, the figure calculation is performed on the exposure pattern and the shot pattern. Further, a method of creating a mask pattern by arranging a shot cell in a mask pattern and then arranging a shading band, which is a region not exposed to light by this mask pattern, is known (see, for example, Patent Document 1). .).
Japanese Patent Laid-Open No. 10-232377 (page 5-9, FIG. 1-6)

  However, in the above-described divided exposure method, when the mask pattern is created for the second time or later and the shot cell is changed, the reference point of the shot cell created for the second time or later is the shot cell created for the first time. May deviate from the reference point. Therefore, in this case, since the exposure data must be created again, there is a problem that it is not easy to create a mask pattern.

  SUMMARY An advantage of some aspects of the invention is that it provides a pattern simulation method, a program thereof, a medium on which the program is recorded, and an apparatus thereof that can easily create a mask pattern.

  The present invention creates a cutout pattern indicating a specific area in the exposure pattern to be formed on the substrate, and creates an auxiliary pattern that is larger than the area exposed by one shot in the cutout pattern and smaller than the cutout pattern. In this auxiliary pattern, the area exposed by one shot in the cutout pattern is saved as a shot pattern, and the saved shot pattern is placed in the cell of the mask pattern to create mask data To do.

  Then, after creating a cutout pattern indicating a specific area in the exposure pattern to be formed on the substrate, an auxiliary pattern that is larger than the area exposed in one shot in this cutout pattern and smaller than the cutout pattern is created. And save. Thereafter, an area exposed by one shot in the cutout pattern is stored as a shot pattern in the auxiliary pattern, and then the stored shot pattern is arranged in a mask pattern cell to create mask data. As a result, even if the mask pattern is created for the second time or later and the cutout pattern is changed, if the change is within the auxiliary pattern stored at the time of creating the first mask pattern, 1 It is not necessary to change the cell saved when creating the mask pattern for the second time. Therefore, the mask pattern can be easily created.

  In addition, a cell for storing a shot pattern to be exposed in one shot is created on a mask pattern, and a specific region in the exposure pattern to be formed on the substrate is formed in the cell created on the mask pattern. Create a cutout pattern that indicates the area to be exposed by one shot in the cutout pattern, save it in a cell, place the cutout cell in the cell of the mask pattern, and save the mask data To create.

  Then, a cell for storing a shot pattern to be exposed in one shot is created on the mask pattern, and then a specific pattern in the exposure pattern to be formed on the substrate is created in the cell created on the mask pattern. A cutout pattern indicating the area is created. Thereafter, a shot pattern which is an area to be exposed by one shot in the cutout pattern is created and stored in a cell, and then the cutout cell is arranged in a mask pattern cell to create mask data. As a result, even if this mask pattern is created for the second time or later and the cutout pattern is changed, if the change is within the cell created at the time of creating the first mask pattern, the first time It becomes unnecessary to change the cell stored when creating the mask pattern. Therefore, the mask pattern can be easily created.

  Furthermore, a cutout pattern indicating a specific area in the exposure pattern to be formed on the substrate is created, and the area exposed by one shot in the cutout pattern is cut out as a shot pattern and stored in a cell. A pattern simulation method for creating mask data by placing the processed cell in a mask pattern cell, and when the mask data is created for the second time or later, the origin of the cell cut out for the first time and the second time or later The difference from the origin of the obtained cell is calculated, the origin position of the cell cut out after the second time is moved, and the mask data created after the second time is arranged at the same position as the cell cut out for the first time. Is.

  Then, after creating a cutout pattern indicating a specific area in the exposure pattern to be formed on the substrate, the area exposed by one shot in the cutout pattern is cut out as a shot pattern and stored in the cell. Thereafter, the stored cells are arranged in the mask pattern cells to create mask data. At this time, when the mask data is generated for the second time or later, the difference between the origin of the cell cut out for the first time and the origin of the cell cut out for the second time or later is calculated. After that, the position of the origin of the cell cut out after the second time is moved, and the mask data created after the second time is arranged at the same position as the cell cut out for the first time. Therefore, even if the mask pattern is created for the second time or later, there is no deviation between the cell cut out for the first time and the mask data created for the second time or later. Therefore, it is not necessary to modify the mask data created after the second time, and the mask pattern can be easily created.

  According to the present invention, even if the mask pattern is created for the second time or later and the cutout pattern is changed, if the change is within the auxiliary pattern stored at the time of creating the first mask pattern, Since the cell saved at the time of creating the first mask pattern can be made unnecessary, the mask pattern can be easily created.

  Even if the mask pattern is created for the second time or later and the cutout pattern is changed, if the change is within the cell created when the first mask pattern is created, the first mask is used. Since it is not necessary to change the cell stored when creating the pattern, the mask pattern can be easily created.

  Further, even if the mask pattern is created for the second time or later, there is no deviation between the cell cut out for the first time and the mask data created for the second time or later. Since it can be made unnecessary, the mask pattern can be easily created.

  Hereinafter, a pattern simulation method according to a first embodiment of the present invention will be described with reference to FIGS.

  First, the design method of a divided exposure mask as a pattern simulation method shown in FIGS. 1 to 6 is a design method of a liquid crystal display device as a method of manufacturing a liquid crystal display device. Further, as a design method of this divided exposure system mask, CAD (Computer Aided Design) is generally used as a design.

  Then, as shown in FIG. 4, for example, this divided exposure method mask is formed on a glass substrate 1 of an array substrate used as a liquid crystal panel of a liquid crystal display device, on at least one layer of a conductor layer or a dielectric layer. A panel pattern 2 is formed by dividing a layer as a thin film configured as described above into a plurality of regions along the layer. Here, the panel pattern 2 is a cut-out pattern indicating a specific area which is an area cut out at a specific layer in an exposure pattern to be formed on the glass substrate 1.

  Thereafter, as a first step, the panel pattern 2 is disposed on the glass substrate 1. At this time, the layers formed on the glass substrate 1 are wiring such as scanning lines and signal lines, electrodes such as pixel electrodes, and switching elements such as thin film transistors.

  Further, a shot pattern cell 4 serving as a shot cell is formed by cutting out a region in the region of the panel pattern 2 on the glass substrate 1 where the pattern of the conductor layer and the dielectric layer is exposed by one shot and is cut out as a shot pattern 3. Save to. Here, this shot pattern 3 is a pattern indicating a region exposed by one shot.

  Thereafter, as a second step, the shot pattern 3 stored in the shot pattern cell 4 is drawn on the glass substrate 1. Here, the shot pattern 3 is an area exposed by one shot in the panel pattern 2.

  That is, as a third step, the shot pattern 3 drawn on the glass substrate 1 is cut out along the shot pattern 3 to create a shot pattern cell 4 which is a new part as shown in FIG. At this time, for the creation of the shot pattern cell 4, the panel pattern 2 and the shot pattern 3 are figured out.

  Further, as the fourth step, the cut shot pattern cell 4 is arranged so as to be pasted on the cell of the mask pattern 5. Then, as shown in FIG. 6, the mask pattern 5 is created as a mask pattern 5 to complete exposure data as mask data, as shown in FIG. Let

  Thereafter, after the creation of the first mask pattern 5 is completed, that is, in the state where the mask pattern 5 already exists, when the mask pattern 5 of the second and subsequent divided exposure methods is created, first, the eleventh As a step, as shown in FIG. 1, an auxiliary layer pattern 7 that is larger than the outer shape of the region of the shot pattern 3 and smaller than the outer shape of the mask of the panel pattern 2 is previously drawn outside the cutout region of the panel pattern 2. At this time, the auxiliary layer pattern 7 is drawn using the auxiliary layer. The auxiliary layer pattern 7 is formed of a layer different from the shot pattern 3.

  Thereafter, as a twelfth step, an area that is in the auxiliary layer pattern 7 and is exposed by one shot in the panel pattern 2 is stored as the shot pattern 3. Furthermore, as a thirteenth step, the stored shot pattern 3 is arranged in the shot pattern cell 4 of the mask pattern 5 to create mask data. At this time, the panel pattern 2 is divided along the shot pattern 3, but as shown in FIG. 2, the cell pattern into the shot pattern cell 4 includes the auxiliary layer pattern 7. As a result, the origin is always fixed to the lower left of the auxiliary layer pattern 7.

  Therefore, as shown in FIG. 3, the shot pattern cell 4 is arranged in the mask pattern 5, but if the shape of the shot pattern 3 is changed, the entire shot pattern cell 4 is shifted if it is inside the auxiliary layer pattern 7. There is nothing.

  As described above, according to the first embodiment, the auxiliary layer pattern 7 larger than the shot pattern 3 and smaller than the panel pattern 2 is drawn in advance when the mask pattern 5 of the second and subsequent divided exposure methods is created. Then, after storing the shot pattern 3, the stored shot pattern 3 is arranged in the shot pattern cell 4 of the mask pattern 5 to create mask data.

  On the other hand, in the design method of the divided exposure mask that is the premise of the first embodiment, as shown in FIG. 14, the panel pattern 2 to the shot pattern 3 along the shot pattern 3 on the drawing of the liquid crystal panel. Cut out. Thereafter, as shown in FIG. 15, a shot pattern cell 4 is created from the shot pattern 3 and is stored as a cell. Further, as shown in FIG. 16, the created shot pattern cell 4 is arranged in the cell of the mask pattern 5, and the first mask data is created and designed.

  Thereafter, when a part of the mask data is modified after designing the first mask data, that is, when the mask data is designed for the second time or later, as shown in FIG. The shot pattern 3 is cut out by changing the shape of the shot pattern 3. Thereafter, the cut shot pattern 3 is stored on the cell of the same mask pattern 5 stored when the mask pattern 5 is created for the first time.

  At this time, by changing the shape of the shot pattern 3, the origin may be shifted in the cut shot pattern 3 as shown in FIG. In this case, the shot pattern cell 4 installed on the mask pattern 5 has been updated, but since the origin in the shot pattern cell 4 is shifted as shown in FIG. Pattern 3 is shifted.

Further, data to be input to an exposure machine (not shown) will be described. As for where on the glass substrate 1 the specified area of the mask pattern 5 is exposed by the exposure machine, numerical data called exposure data is created and input. Yes. That is, as shown in FIG. 20, a shot with a rectangle of dimensions A × B and a center point (a1, b1) is shot at a position (a1 ₂ , b1 ₂ ) of the glass substrate 1 as shown in FIG. Are arranged such that the center points of the two are aligned, the dimensions A and B, the coordinates (a, b) on the reticle, the numerical values of the coordinates (a ₁ , b ₁ ) on the glass substrate 1 and the like are sent to the exposure machine. input. The position of the shot is determined by the input coordinates.

At this time, as shown in FIG. 22, when the origin is shifted in the cut shot pattern cell 4, the shot pattern 3 on the mask pattern 5 is shifted. It is necessary to change the exposure data by changing (a1, b1) to (a2, b2) as shown in FIG. Here, there is no need to change each of A, B and a ₁ , b ₁ . Even with such a slight deviation, it is necessary to recreate the exposure data.

  Therefore, exposure data to be input to the exposure device must be created every time. That is, the origin in the shot pattern cell 4 created when the shot pattern 3 to be cut out changes. For this reason, even if the mask pattern 5 is pasted at the same position in the cell, the shot pattern 3 is displaced, so that the exposure area needs to be reset.

  Therefore, as in the first embodiment described above, when creating the mask pattern 5 of the second and subsequent divided exposure methods, the shot pattern 3 is created after the auxiliary layer pattern 7 is drawn, and the mask data is created. Thus, even if the mask pattern 5 is created for the second time or later and the shape of the panel pattern 2 is changed, the auxiliary layer pattern 7 saved when the mask pattern 5 is created for the first time. If the change is within the range, it is possible to eliminate the need to change the cell of the mask pattern 5 stored when the mask pattern 5 is created for the first time.

  Therefore, after designing the mask pattern 5 by dividing the panel pattern 2 for the first time, even if the shot pattern 3 is created by dividing the panel pattern 2 for the second and subsequent times, the mask pattern 5 stored for the first time is saved. Since it is possible to create data that does not require a cell change, that is, re-creation of exposure data, the mask pattern 5 stored as this data can be easily created. In other words, if the panel pattern 2 is a small change, it is not necessary to recreate exposure data even if the pattern is shifted when the mask pattern 5 is divided from the panel pattern 2.

  In the first embodiment, when the auxiliary layer pattern 7 is drawn before creating the shot pattern 3, the mask pattern 5 is created for the second time or later and the shape of the panel pattern 2 is changed. Although the change of the mask pattern 5 on the cell is eliminated, it is also possible to use a method in which the panel pattern 2, which is the cut-out area, is pre-celled as in the second embodiment shown in FIGS. it can.

  In this case, as shown in FIG. 7, a shot pattern cell 4 for storing a shot pattern 3 to be exposed in one shot is created on a mask pattern 5. That is, the shot pattern cell 4 is arranged on the panel pattern 2 in a state where the shot pattern 3 is arranged. Thereafter, in the shot pattern cell 4 created on the mask pattern 5, a panel pattern 2 is created as a divided region, which is a region obtained by cutting out an exposure pattern to be formed on the glass substrate 1 with a specific layer.

  Then, as shown in FIG. 8, a shot pattern 3 which is an area to be exposed in one shot in the panel pattern 2 is cut out and created, and stored in a shot pattern cell 4 stored in advance. Here, the shot pattern 3 is arranged corresponding to the origin in the shot pattern cell 4, and the position on the panel pattern 2 is determined as the origin position of the shot pattern cell 4. Further, the shot pattern cell 4 is placed in the cell of the mask pattern 5 to create mask data.

  Thereafter, the shot pattern cell 4 is once converted into flat data and then divided to create a panel pattern 2, and then the panel pattern 2 is arranged in the shot pattern cell 4. At this time, as shown in FIG. 9, the shot pattern cell 4 is used, the shift amount of the origin in the shot pattern cell 4 is calculated, and the shot pattern is created when the panel pattern 2 is created for the second and subsequent times. Move 3 to correct.

  As a result, as shown in FIG. 10, even when the mask data is created for the second time or later and the area indicating the mask pattern 5 is changed, the shot pattern created when the mask pattern 5 is created for the first time. If the change is made in the cell 4, the change of the shot pattern cell 4 stored when the mask pattern 5 is created for the first time can be made unnecessary. Therefore, since the change on the mask pattern 5 can be eliminated, the second and subsequent shot patterns 3 do not deviate from the entire cells of the mask pattern 5 created at the first time, so that the same as in the first embodiment. The effect of this can be achieved.

  Further, as in the third embodiment shown in FIGS. 11 to 13, the difference between the second and subsequent panel pattern 2 cutout areas 2b and the first cutout panel pattern 2 cutout area 2a is calculated. A configuration may be adopted in which the origin in the created shot pattern cell 4 is moved so as to overlap with the first mask pattern 5. At this time, as shown in FIG. 11, each of the cutout areas 2a and 2b is almost overlapped, but a part of the cutout area 2b protrudes outside the cutout area 2a.

  In this case, a cutout area 2a that is a panel pattern 2 indicating a specific area cut out by a specific layer is created on the division target pattern that is an exposure pattern on the glass substrate 1. Thereafter, the shot pattern 3 is cut out and stored in the shot pattern cell 4 as a pattern exposed in one shot in the region in the panel pattern 2. Further, the shot pattern cell 4 is arranged in the cell of the mask pattern 5 to create mask data.

  When the mask data is generated for the second time or later, as shown in FIG. 11, the origin of the panel pattern 2 cut out for the second time or later is shifted and shifted from the origin of the panel pattern 2 cut out for the first time. If it is, the difference between the cut-out area 2b of the second and subsequent panel patterns 2 and the cut-out area 2a of the panel pattern 2 cut out the first time is calculated. In other words, the difference between the origin of the first shot pattern 3 and the origin of the second and subsequent shot patterns 3 is calculated. Thereafter, as shown in FIG. 12, by shifting the position of the origin of the second and subsequent shot patterns 3 to the origin of the first shot pattern 3, the shot pattern 3 is located at the same position as the first mask pattern 5. Be placed.

  As a result, as shown in FIG. 13, the shift of the origin brings the shot pattern 3 on the cell of the mask pattern 5 to the same position as the first time, and the first time unless a significant change that protrudes from the exposure area is made. Since the exposure data can be used, the same effects as those of the first embodiment can be obtained.

  The operation of each of the above embodiments may be a computer-readable pattern layout program for designing a liquid crystal display device, or a mask design CAD software for a liquid crystal display device that can be automatically calculated by a computer. Further, the pattern layout program or the mask design CAD software can be stored in an optical disk, a magnetic disk, or other recording medium, and the recording medium can be used to automatically operate the computer.

It is explanatory drawing which shows the auxiliary pattern and shot pattern after the 2nd in 1st Embodiment of the pattern simulation method of this invention. It is explanatory drawing which shows the shot pattern cut out after the 2nd by the pattern simulation method same as the above. It is explanatory drawing which shows the mask pattern formed in the 2nd time or later by the pattern simulation method same as the above. It is explanatory drawing which shows the 1st cutting-out pattern by a pattern simulation method same as the above. It is explanatory drawing which shows the 1st short pattern cell by a pattern simulation method same as the above. It is explanatory drawing which shows the mask pattern formed by the 1st time by the pattern simulation method same as the above. It is explanatory drawing which shows the auxiliary pattern and shot pattern after the 2nd in the pattern simulation method of the 2nd Embodiment of this invention. It is explanatory drawing which shows the shot pattern cell before cutting out a shot pattern after the 2nd time by a pattern simulation method same as the above. It is explanatory drawing which shows the shot pattern cell after cutting out a shot pattern after the 2nd time by a pattern simulation method same as the above. It is explanatory drawing which shows the mask pattern formed in the 2nd time or later by the pattern simulation method same as the above. It is explanatory drawing which shows the auxiliary pattern and shot pattern after the 2nd in the pattern simulation method of the 3rd Embodiment of this invention. It is explanatory drawing which shows the shot pattern cut out after the 2nd by the pattern simulation method same as the above. It is explanatory drawing which shows the mask pattern formed in the 2nd time or later by the pattern simulation method same as the above. It is explanatory drawing which shows the 1st cut-out pattern and shot pattern in the pattern simulation method used as the premise of this invention. It is explanatory drawing which shows the 1st short pattern cell by a pattern simulation method same as the above. It is explanatory drawing which shows the mask pattern formed by the 1st time by the pattern simulation method same as the above. It is explanatory drawing which shows the cutting pattern and shot pattern after the 2nd by the pattern simulation method same as the above. It is explanatory drawing which shows the shot pattern cut out after the 2nd by the pattern simulation method same as the above. It is explanatory drawing which shows the mask pattern produced after the 2nd time by the pattern simulation method same as the above. It is explanatory drawing which shows the mask pattern produced by the 1st time by the pattern simulation method same as the above. It is explanatory drawing which shows the state which has arrange | positioned on the glass substrate the mask pattern produced by the 1st time by the pattern simulation method same as the above. It is explanatory drawing which shows the mask pattern produced after the 2nd time by the pattern simulation method same as the above. It is explanatory drawing which shows the state which has arrange | positioned on the glass substrate the mask pattern produced by the 2nd time or later by the pattern simulation method same as the above.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Glass substrate as a substrate 2 Panel pattern as a cut-out pattern 3 Shot pattern 4 Shot pattern cell as a cell 5 Mask pattern 7 Auxiliary layer pattern as an auxiliary pattern

Claims (8)

Create a cutout pattern that shows a specific area in the exposure pattern to be formed on the substrate,
Create and save an auxiliary pattern that is larger than the area exposed in one shot in this cutout pattern and smaller than the cutout pattern,
In this auxiliary pattern, the area exposed by one shot in the cutout pattern is stored as a shot pattern,
A pattern simulation method, wherein mask data is created by arranging the stored shot pattern in a cell of a mask pattern. Create a cell on the mask pattern to store the shot pattern to be exposed in one shot,
In the cell created on this mask pattern, create a cutout pattern indicating a specific area in the exposure pattern to be formed on the substrate,
Create a shot pattern that is the area to be exposed with one shot in this cutout pattern, save it in the cell,
A pattern simulation method characterized in that the cut out cells are arranged in a mask pattern cell to create mask data. Create a cutout pattern that shows a specific area in the exposure pattern to be formed on the substrate,
The area exposed by one shot in this cutout pattern is cut out as a shot pattern and stored in a cell,
A pattern simulation method for creating mask data by placing the stored cells in cells of a mask pattern,
When the mask data is created for the second time or later, the difference between the origin of the cell cut out for the first time and the origin of the cell cut out for the second time or later is calculated,
A pattern simulation method characterized by moving the position of the origin of a cell cut out after the second time and placing mask data created after the second time at the same position as the cell cut out for the first time. Creating a cutout pattern indicating a specific area in the exposure pattern to be formed on the substrate;
Creating and storing an auxiliary pattern that is larger than the area exposed in one shot in the cutout pattern and smaller than the cutout pattern; and
In the auxiliary pattern, storing an area exposed by one shot in the cutout pattern as a shot pattern;
A pattern simulation program comprising the step of arranging the stored shot pattern in a cell of a mask pattern to create mask data. Creating a cell on the mask pattern for storing a shot pattern to be exposed in one shot, and
In the cell created on the mask pattern, creating a cutout pattern indicating a specific region in the exposure pattern to be formed on the substrate;
Creating a shot pattern, which is an area to be exposed in one shot in the cutout pattern, and storing it in a cell;
A pattern simulation program comprising: a step of arranging the cut-out cells in cells of a mask pattern to create mask data. Creating a cutout pattern indicating a specific area in the exposure pattern to be formed on the substrate;
Cutting out an area exposed by one shot in the cutout pattern as a shot pattern and storing it in a cell;
A pattern simulation program comprising the step of placing the stored cells in cells of a mask pattern and creating mask data,
Calculating the difference between the origin of the cell cut out first time and the origin of the cell cut out after the second time when the mask data is created for the second time or later;
Moving the position of the origin of the cell cut out after the second time, and placing the mask data created after the second time at the same position as the cell cut out for the first time. Simulation program. 7. A medium on which a pattern simulation program according to claim 4 is recorded so as to be readable by a computer. A pattern simulation apparatus that simulates an exposure pattern exposed on a substrate based on the pattern simulation program according to claim 4.

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