JP2005214639A - Infrared solid-state image sensor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermal type infrared solid-state image sensor in which a dynamic range is hardly exceeded in a subsequent-stage circuit while suppressing an offset distribution and temperature drifts due to voltage drops in a drive wire. <P>SOLUTION: The thermal type infrared solid-state image sensor comprises a two-dimensional arrangement of photo-sensitive pixels 1; reference pixels 12 constituted by excluding a heat-insulating structure and/or an infrared absorbing structure; signal lines 5 of which terminals are each connected to a first group of constant current means 2; a bias line 19 for connecting a second group of constant current means 20 in parallel provided for each row of pixel areas and causing the approximately same voltage drop as in the drive wire 3; and differential integrating circuits for integrating the differences between both end voltages of the first group of constant current means 2 and the second group of constant current means 20 for a prescribed time and outputting them. Reference pixel output signals outputted from the differential integrating circuits 7 are sampled and held by a sample holding circuit 13. The reference pixel output signals are compared with a reference voltage to generate bias voltages according to their differences and input them to the bias line 19. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a thermal infrared solid-state imaging device that detects a temperature change caused by incident infrared rays using a two-dimensionally arranged semiconductor sensor, and more particularly, a thermal type that outputs an electrical signal from a semiconductor sensor after integration processing by a signal processing circuit. The present invention relates to an infrared solid-state imaging device.

  In a general thermal infrared solid-state imaging device, pixels having a heat insulating structure are two-dimensionally arranged, and an infrared image is captured by utilizing the fact that the temperature of the pixel changes due to incident infrared rays. In the case of an uncooled thermal infrared solid-state image sensor, the temperature sensor that constitutes the pixel uses a semiconductor element such as a diode or transistor in addition to a bolometer such as polysilicon, amorphous silicon, silicon carbide, or vanadium oxide. It has been known. In particular, semiconductor elements such as diodes are advantageous in making the characteristics of each pixel uniform because variations in electrical characteristics and temperature dependence are very small between solids.

  In the thermal infrared solid-state imaging device, the pixels are two-dimensionally arranged, connected to each row by a drive line, and connected to each column by a signal line. Each drive line is selected in turn by the vertical scanning circuit and the switch, and the pixel is energized from the power source through the selected drive line. The output of the pixel is transmitted to the integration circuit via the signal line, integrated and amplified by the integration circuit, and sequentially output to the output terminal by the horizontal scanning circuit and the switch (for example, see Non-Patent Document 1).

  In these thermal infrared solid-state imaging devices, a voltage drop in the drive line affects the voltage input to the integration circuit in addition to the voltage across the pixel. However, since the amount of voltage drop in the drive line differs for each pixel column, the output of the integration circuit also varies for each pixel column, and an offset distribution due to the resistance of the drive line occurs in the captured image. Further, the response of the thermal infrared solid-state imaging device to infrared light, that is, the change in the voltage across the pixel is much smaller than the voltage drop component in the drive line. For this reason, there is a problem that the amplifier is saturated due to the voltage drop distribution due to the drive line, and the necessary amplification cannot be ensured.

  Further, since the response of the pixel includes a response due to a change in element temperature in addition to the response of infrared light, there is also a problem that the element output drifts with a change in element temperature. In other words, it is ideal that the pixel is completely insulated and only the temperature change due to infrared absorption is detected, but the thermal insulation structure of the pixel has a finite thermal resistance, so the environmental temperature changes during the detection operation. Then the output will also change. Since the output fluctuation due to the change in the environmental temperature is indistinguishable from the change in the incident infrared ray, the measurement accuracy of the infrared ray is lowered and stable image acquisition cannot be performed.

In order to solve these problems, Japanese Patent Laid-Open No. 2003-222555 employs the following configuration.
(1) A differential integration circuit is used as the integration circuit.
(2) A bias line parallel to the drive line is provided, its resistance is set to be substantially the same as that of the drive line, and a current source for supplying substantially the same current as the pixel current source is provided for each pixel column of the bias line.
(3) The voltage across the pixel current source and the voltage across the current source connected to the bias line are input to the input of the differential integration circuit.
(4) A reference signal output circuit for providing an output corresponding to a change in element temperature is provided, and the output is applied to the bias line via a low-pass filter or a buffer.

  Since the resistances of the bias line and the drive line are substantially the same, the voltage drop amounts of the bias line and the drive line are substantially the same. That is, the voltage drop distribution due to the drive line resistance is subtracted by the differential integration circuit and is not output to the outside. Furthermore, since the voltage applied to the bias line is generated based on a reference signal output circuit that outputs a signal output change corresponding to pixel element temperature fluctuations, drift due to element temperature fluctuations is also subtracted by the differential integration circuit. Is not output.

Ishikawa et al., “Low cost 320 × 240 uncooled IRFPA using conventional silicon IC process”, Part of the SPIE Conference on infrared Technology and Applications XXV, April 1999, Vol. 3698, pages 556 to 564 page JP 2003-222555 A

  However, the conventional thermal infrared solid-state imaging device has a problem in that a problem occurs in the subsequent circuit due to slight variations in the voltage applied to the bias line. That is, the voltage applied to the bias line is supplied from the reference signal output circuit through a low-pass filter and a buffer amplifier. However, with respect to the voltage applied to the bias line, a DC voltage offset component that varies from element to element is generated due to various factors such as manufacturing variations. Although this DC voltage offset component is minute, it is amplified by a differential integration circuit (in many cases, gain of 10 or more) with high amplification, and further amplified by an amplifier circuit inside the camera in which the element is incorporated. The dynamic range is exceeded, and clipping is likely to occur. Therefore, in actual device manufacturing, it is necessary to finely adjust the voltage applied to the bias line by changing the internal circuit constants of the buffer amplifier and adding a new voltage adjusting circuit for each device. Since the voltage change due to the bias adjustment is generally input to a high gain differential integration circuit, the adjustment circuit needs to have a high accuracy, and these fine adjustments have also caused an increase in manufacturing cost.

  Accordingly, the present invention has an object to provide a thermal infrared solid-state imaging device in which a dynamic range over in a subsequent circuit is unlikely to occur while suppressing an offset distribution due to a voltage drop in a drive line and a temperature drift due to device temperature fluctuation. And

In order to achieve the above object, an infrared solid-state imaging device according to the present invention has a heat insulation structure and an infrared absorption structure, and at least one or more diodes connected in series constitute a photosensitive pixel, and the photosensitive pixel is two-dimensional. A pixel area, a drive line in which one pole of the photosensitive pixel is commonly connected for each row, a vertical scanning circuit that sequentially selects the drive line and connects to the power source, and the other pole of the photosensitive pixel. Are connected in common to each column, and a signal line having a first group constant current means connected to each end thereof and a second group of constant current means provided for each column of the pixel area are connected in parallel. And a bias line that generates a voltage drop substantially the same as that of the drive line, and is provided for each column of the pixel area, and the voltage between both ends of the first group of constant current generating means and the second group of constant current generating means. Differential integration that integrates and outputs the difference for a fixed time And a horizontal scanning circuit that selects an output signal of the differential integration circuit for each column and guides the output signal to an output terminal, and further substantially responds to a temperature change of the entire element. A reference signal output circuit for outputting a reference signal that changes
A differential signal between a voltage at a predetermined position on the bias line and the reference signal is taken out, a bias voltage corresponding to a difference between the differential signal and a reference voltage is generated, and the bias voltage is input to the bias line. To do.

  Also in the present invention, the voltage drop amount of the bias line and the drive line is almost the same as in the conventional thermal infrared solid-state imaging device, so the voltage drop distribution due to the drive line resistance is subtracted by the differential integration circuit, and the external Is not output. However, in the thermal infrared solid-state imaging device according to the present invention, the reference signal of the reference signal output circuit is not directly set as the bias voltage, but the difference between the reference signal and the voltage of the bias line is taken and the difference signal is set to a predetermined value. Compared with the reference voltage, a bias voltage corresponding to the difference is generated and fed back to the bias line. Therefore, according to the present invention, the bias line voltage can be changed according to the reference signal reflecting the element temperature change, and at the same time, the bias line voltage variation caused by the manufacturing variation can be automatically corrected by the feedback mechanism. As a result, it is possible to eliminate the voltage fine adjustment circuit which has conventionally been required and to perform automatic adjustment.

  That is, according to the present invention, the bias voltage variation is automatically corrected while taking advantage of the offset distribution suppression and temperature drift suppression due to the voltage drop in the conventional drive line, and the dynamic range over in the subsequent circuit is unlikely to occur. A thermal infrared solid-state imaging device can be provided.

  In the present invention, the “predetermined position on the bias line” may be a fixed position on the bias line, and is not limited to a specific position. That is, in the present invention, the voltage at a predetermined position on the bias line is taken out to monitor the voltage level of the entire bias line, and therefore the principle of the invention is not affected by monitoring the voltage at any position. The “predetermined position on the bias line” may be an end portion on the horizontal scanning start side of the bias line as shown in an example to be described later, conversely, an end portion on the horizontal scanning end side, or other position.

  In the present invention, the “reference voltage” may be a certain voltage and is not limited to a specific voltage value. That is, in the present invention, the “reference voltage” is a reference for automatically correcting the feedback bias voltage to a constant voltage. Therefore, the “reference voltage” is a certain voltage, and is any voltage as long as the output signal of the differential integration circuit is selected to fall within the dynamic range of the subsequent circuit. However, it does not affect the principle of the invention.

Embodiment 1 FIG.
FIG. 1 is a circuit diagram showing a thermal infrared solid-state imaging device according to Embodiment 1 of the present invention.
Similar to a conventional thermal infrared solid-state image sensor, a plurality of photosensitive pixels 1 (hereinafter simply referred to as “pixel 1”) are configured by diodes connected in series and having an infrared absorption structure and a heat insulation structure. A pixel area in which the pixels 1 are two-dimensionally arranged is configured. A drive line 3 is commonly connected to each row of the pixels 1. In addition, a signal line 5 is commonly connected to each column of the pixels 1, and a constant current source 2 is connected to a terminal of each signal line 5 as a first group of constant current means. Further, the drive lines 3 are selected in order by the vertical scanning circuit 4 and the switch, and each drive line 3 is connected to the power source 6. On the other hand, a constant current source 20 for supplying substantially the same current as the constant current source 2 is arranged as a second group of constant current means for each column of the pixels 1 in the vicinity of the constant current source 2 and is driven. They are connected in parallel by a bias line 19 substantially parallel to the line 3. The bias line 19 has substantially the same resistance value as that of the drive line 3 so as to generate a voltage drop substantially the same as that of the drive line 3. The bias line 19 only needs to generate substantially the same voltage effect as the drive line 3 and does not necessarily have the same resistance as the drive line 3. When the current value of the constant current source 2 is different from that of the constant current source 20, the bias line 19 and the drive line 3 may have different resistances accordingly.

  A differential amplification integration circuit 7 is formed for each column of the pixels 1, and integrates, amplifies and outputs the difference between the voltage across the constant current source 2 and the voltage across the constant current source 20. Then, the horizontal selection switch 9 is sequentially turned on by the horizontal scanning circuit 8, and the output signal of the differential integration circuit 7 arranged for each column is output from the output terminal 10 to the outside via the output amplifier 11. Since the bias line 19 has substantially the same voltage drop as that of the drive line 3, the voltage drop in the drive line 3 is canceled from the output by the above configuration, and the offset distribution derived from the drive line 3 is removed.

  Here, conventionally, a reference signal reflecting the element temperature is directly input to the bias line 19, but in the present invention, the difference between the reference signal and the voltage of the bias line is taken, and the difference signal is used as a predetermined reference voltage. In contrast, a bias voltage corresponding to the difference is generated and fed back to the bias line. As a result, the bias line voltage variation due to manufacturing variation or the like can be automatically corrected while changing the bias line voltage in accordance with the reference signal (in accordance with the element temperature).

  In the present embodiment, the heat insulation structure and / or the infrared absorption structure is excluded from the pixels on the left one column of the pixel area to form the reference pixel 12, and the voltage across the constant current source 2 connected to the reference pixel 12 is used as the reference signal. Read as. This reference signal is read out in the same manner as a normal pixel 1 signal. That is, the voltage across the current source 2 connected to the reference pixel 12 and the voltage across the current source 20 connected to the bias line 19 adjacent to the current source 2 are respectively the negative side and the positive side of the differential integration circuit 7. Is integrated and amplified. Then, an output signal corresponding to the reference pixel 12 is read for each line of normal image reading by the horizontal drive circuit 8 and the switch 9 and is output from the output terminal 10 via the amplifier 11.

  A sample hold circuit 13 is connected to the output terminal 10 and samples and holds the output signal of the reference pixel 12. The voltage sampled and held by the sample and hold circuit 13 is input to the minus side terminal of the bias generation circuit (basically a subtraction circuit) 14, and the reference voltage input to the plus side terminal 15 in the bias generation circuit 14 and A bias voltage corresponding to the difference is generated. The generated bias voltage is input to the bias line 19 via the low-pass filter 16, the buffer amplifier 17, and the low-pass filter 18.

  Here, the subtraction polarity of the differential integration circuit 7 and the subtraction polarity of the bias generation circuit 14 are selected in a direction in which the change of the output signal corresponding to the reference pixel 12 is suppressed. That is, when the voltage of the bias line 19 (the voltage of the current source 20 connected to the bias line 19) is input to the positive side of the differential integration circuit 7, the output of the differential integration circuit 7 is the bias generation circuit 14 It is input on the minus side of. Conversely, when the voltage of the bias line 19 is input to the negative side of the differential integration circuit 7, the output of the differential integration circuit 7 is input to the positive side of the bias generation circuit 14. As a result, the bias generation circuit 14 changes the voltage of the bias line 19 in a direction to reduce the difference according to the difference between the sampled and held signal and the reference voltage.

  Therefore, according to the present invention, voltage variation of the bias line due to manufacturing variation or the like is automatically corrected. For this reason, the element output (corresponding to the reference voltage level of the image signal) corresponding to the reference pixel 12 becomes substantially constant without being affected by the manufacturing variation of the DC offset component in the circuit, and the element due to the characteristic variation for each element. It is possible to prevent dynamic range over in the internal and external downstream circuits. Moreover, the voltage of the bias line 19 not only simulates a drive line voltage drop caused by a current source for each column as in the conventional case, but also changes to reflect element temperature drift information by the reference pixel 12, so that the drive in the conventional example is performed. The features of offset distribution suppression and temperature drift suppression due to voltage drop in the line are utilized as they are.

  That is, the negative side terminal of the differential integration circuit 7 corresponding to the normal pixel 1 has (a) a voltage drop component of the drive line 3, (b) a pixel signal change component of the pixel 1 due to environmental temperature, and (c) an incident infrared ray. While the output change component of the pixel 1 is input, (a ′) the voltage drop component at the bias line 19 and (b ′) the reference signal change component due to the environmental temperature are input to the plus side terminal of the differential integration circuit 7. Is done. (A) The voltage drop component of the drive line 3 is canceled by (a ′) the voltage drop component of the bias line, and (b) the pixel signal change component of the pixel 1 due to the environmental temperature is (b ′) the reference signal due to the environmental temperature. Since it is canceled by the change component, the differential integration circuit 7 performs (c) subtraction processing leaving only the output change of the pixel 1 due to incident infrared rays.

  The effects of the present invention will be described in more detail with reference to FIGS. For the sake of simplicity, the switch 9, the amplifier 11, the low-pass filters 16, 18 and the buffer amplifier 17 are omitted in FIG.

As shown in FIG. 3, the bias generation circuit 14 includes, for example, a subtraction circuit 21 and a source follower circuit 22 that functions to level shift the output of the subtraction circuit 21. As the subtraction circuit 21, for example, a known subtraction circuit using an operational amplifier can be used. In the example shown in FIG. 3, the resistor R ₁ is connected to the negative terminal of the operational amplifier, the resistor R ₃ is connected to the positive terminal, and the positive terminal of the operational amplifier and the resistor R ₃ are grounded via the resistor R ₄ . between the negative terminal of the operational amplifier resistor R ₁ op amp output via the resistor R ₂ is fed back. As the source follower circuit, for example, a circuit in which a P-channel MOS transistor 43 is used as a drive transistor and combined with a current source 42 can be used.

As shown in FIG. 3, when the output sampled and held in the sample and hold circuit 13 is V _s and the reference voltage input from the terminal 15 is V _r , the resistors R ₄ and R ₂ in the subtracting circuit 21 are equal, and the resistor R ₁ And R ₃ are equal, the output V _d of the subtracting circuit 21 is expressed by equation (1).

ここでＧは、図２に示すように、出力端子１０からバイアス線１９の入力端までの合計の利得であり、この例ではＲ_２/Ｒ_１に回路２２以降の利得変化を乗じた値となる。尚、サンプルホールド回路１３では利得やレベルシフトは殆ど生じないが、もし出力端子１０からバイアス発生回路１４の入力端までの間に新たな利得成分やレベルシフト成分がある場合には、それらを含めてＧとＶ_ｌを考えれば良い。 The output V _d of the subtracting circuit 21 is level-shifted by the source follower circuit 22, noise components are removed by the low-pass filters 16 and 18, current driving capability is amplified by the buffer amplifier 17, and then the bias line 19 is applied. Given. The total level shift amount of these circuits, that is, the level shift amount of the sum of up to the input end of the bias line 19 from the input end of the bias generating circuit 14 and V _l, the input voltage V _b to the bias line equation Given in.

Here, G is the total gain from the output terminal 10 to the input end of the bias line 19 as shown in FIG. 2. In this example, G 2 is obtained by multiplying R ₂ / R ₁ by a gain change after the circuit 22. Become. In the sample hold circuit 13, almost no gain or level shift occurs, but if there are new gain components or level shift components between the output terminal 10 and the input end of the bias generation circuit 14, these are included. it may be considered the G and _{V l} Te.

(2) As can be seen from the equation, the input voltage V of the bias lines for in accordance with the output timing of the reference pixel from the output signal V _o sample hold circuit 13 in the sample-and-hold output signal V _{s (=} reference pixel output signal) The relationship of _b is inversely proportional as shown in FIG. That is, as the reference pixel output signal V _s increases, the input voltage V _b of the bias line decreases.

On the other hand, the output signal of the reference pixel is determined as follows. First, as shown in FIG. 2, the diode 12 constituting the reference pixel is driven with a constant current by the power source 6 and the constant current source 2 like the other pixels, and the voltage across the constant current source 2 is referred to. Output as signal V _pr . Since the reference pixel does not have an infrared absorption structure and / or a heat insulation structure and does not substantially show a response to the amount of incident infrared light, the reference signal V _pr changes only in accordance with a change in element temperature. That is, a reference signal output circuit is configured by the reference pixel 12, the power source 6, and the constant current source 2, and outputs the reference signal _Vpr according to the element temperature change. This reference signal V _pr is input to the minus terminal side of the differential integration circuit 7 in the same manner as other pixel signals. The voltage across the constant current source 20 connected to the bias line 19 is input to the positive terminal side of the differential integration circuit 7. The gain from the input terminal to the output terminal 10 of the differential integration circuit 7, that is, the total gain from the differential integration circuit 7 to the output amplifier 11 in this example is A _v , and the total of the DC offset voltage generated there is V _of. , the output V _o of the buffer amplifier 11 corresponding to the reference pixel 12 is as following equation (3).

Since the reference pixel output signal V _s in the equation (2) is obtained by sampling and holding V _o output at the timing corresponding to the reference pixel 12 by the sample hold circuit 13, the equation (2) can be expressed by the following ( 4) can be rewritten as:

（５）式からわかるように、Ａ_ｖとＧが共に１より十分に大きければ、Ｖ_ｏはＶ_ｒとほぼ等しくなる。

(3) and rearranging the equation (4), V _o can be expressed by the following equation.

As can be seen from the equation (5), if both _Av and G are sufficiently larger than 1, V _o is almost equal to V _r .

For example, if both _Av and G are 10 or more, preferably 50 or more, more preferably 100 or more, the influence of the second term and the third term of the formula (5) becomes very small and corresponds to the reference pixel 12. The output V _o of the buffer amplifier 11 to be controlled is controlled so as to be substantially equal to the reference voltage V _r . Since the reference pixel output signal corresponding to the reference pixel 12 reflects factors other than infrared absorption, such as environmental temperature changes and manufacturing variations, the reference pixel output signal is controlled to a constant reference voltage _Vr. This means that output fluctuations due to manufacturing variations can be automatically corrected. Therefore, if the reference voltage V _r is appropriately set within the dynamic range of the subsequent circuit, it is possible to prevent the dynamic range from being over due to manufacturing variations. This eliminates the need for fine adjustment of the bias line voltage performed for each element, for example, change of the internal circuit constant of the buffer amplifier 17 or addition of a new voltage adjustment circuit.

Note that the reference voltage V _r in this embodiment may be a constant value that falls within the dynamic range of the subsequent circuit, and is not particularly limited to a specific voltage. However, in the present embodiment, since the reference voltage V _r becomes the reference voltage level of the image signal, it is preferable that it is approximately the center of the dynamic range of the amplifier included in the subsequent circuit. For example, in a general circuit configuration, the output voltage when the signals input to the positive and negative input terminals of the differential integration circuit 7 are the same is often designed as the center of the dynamic range of the subsequent circuit. In such a case, it is preferable that the signal to take into plus and minus input terminals of the differential integrating circuits 7 match V _r to the output voltage V _o when the phase is equal.

Further, this relationship is maintained even if the element temperature changes and V _pr changes. First, when the ambient temperature rises and V _pr rises at the connection point between the reference pixel 12 and the current source 20, that is, the negative input voltage of the differential integration circuit, V _o falls according to the equation (3). However, immediately (4), _{since V b} also increases, _{V o} is increased in accordance with equation (3). That is, the feedback loop so as to suppress a change in V _o is formed.

Incidentally, A _v in this embodiment take more than 10 to correspond to the output gain of the pixel 1 are common. Setting the value of G to 10 or more can also be realized with a single-stage operational amplifier. Therefore, the condition that both _Av and G are sufficiently larger than 1 can be easily satisfied.

On the other hand, when the condition that both _Av and G are sufficiently larger than 1 is not satisfied, the influence _of V _l , V _pr , and V _of , which varies depending on the environmental temperature and manufacturing variation, is applied to the output Vo as shown in the equation (5). appear. However, the required operating temperature range and allowable manufacturing variations vary depending on the application and design of the image sensor. Therefore, it goes without saying that the present invention can be applied even if the condition that both _Av and G are sufficiently larger than 1 is not satisfied depending on the application and design.

一般にＶ_ｒ、Ｖ_ｌ、Ｖ_ｐｒは同程度の電圧オーダであるので、（７）式における第２項は第１項に比べ小さくなり、参照画素出力は基準電圧Ｖｒにほぼ調整される。このような関係が充たされるには、ＡｖとＧの積が１０以上、より好ましくは５０以上、さらに好ましくは１００以上であることが望ましい。 For example, even when the condition that both _Av and G are sufficiently larger than 1 is not satisfied, V _o can be expressed by the following equation under the condition that the product of _Av and G is sufficiently larger than 1.

Since V _r , V _l , and V _pr are generally in the same voltage order, the second term in equation (7) is smaller than the first term, and the reference pixel output is substantially adjusted to the reference voltage Vr. In order to satisfy such a relationship, it is desirable that the product of Av and G is 10 or more, more preferably 50 or more, and still more preferably 100 or more.

Hereinafter, each configuration of the thermal infrared solid-state imaging device according to the present embodiment will be described in detail.
(Differential integration circuit 7)
A configuration example of the differential integration circuit is shown in FIG. FIG. 7 is a patent application (Japanese Patent Application No. 2000-386974) previously filed by the inventor of the present invention, and has an effect that is simpler than a general configuration using an operational amplifier. The differential integration circuit shown in FIG. 7 includes a differential voltage / current conversion amplifier 25 in which the voltage across the constant current source 2 and the voltage across the constant current source 20 are connected to the input side, and the output side of the differential voltage / current conversion amplifier 25. , And a reset transistor 27 connected to periodically reset the integration capacitor 26 to the voltage Vref. The differential voltage / current conversion amplifier 25 is connected without negative feedback, and the product (= time constant) of its output impedance and the capacitance C _i of the integration capacitor 25 becomes five times or more of the integration time T _i. Is set to

  A sample and hold circuit 28 including a sample and hold transistor 45, a sample and hold capacitor 47, and a reset transistor 46 is connected to the input terminal of the integration capacitor 26. The integrated output is sampled by the sample hold circuit 28 and output through the buffer 29. In the differential integration circuit 7 of FIG. 7, the integration circuit is configured using the differential voltage-current conversion amplifier 25 in a state in which negative feedback is not performed, so that the circuit configuration is simplified.

で表される。ここで、Ｔ_ａは時定数である。Ｔa≫Ｔiであれば、

となり、積分器の応答特性となる。 Here, it will be described that the differential voltage-current conversion amplifier 25 shown in FIG. The input / output response characteristic α of a voltage amplifier that is not subjected to general feedback is expressed as follows: the transconductance of the voltage amplifier is gm, the output impedance is Rout, the integration time is Ti,

It is represented by Here, _{T a} is the time constant. If Ta >> Ti,

Thus, the response characteristic of the integrator is obtained.

The condition T _a >> T _i indicates that the time constant represented by the product of the output impedance R _out and the integration capacitance is sufficiently longer than the integration time. For example, when if the constant T _a at least 5 times the integration time T _i, the deviation from the response characteristic of the integrator can be within 10%. In order to increase the constant T _a time, output impedance Rout may be used a very large voltage amplifier. In general, a single amplifier that does not use a negative feedback with a large voltage gain g _m · R _{out has} a large output impedance R _out . For example, only the differential amplifier of general operational amplifiers is taken out and connected without negative feedback or input resistance as shown in FIG. Therefore, according to the differential integration circuit of FIG. 7, the integration circuit can be configured with an extremely simple circuit configuration.

(Low-pass filter)
The low-pass filters 16 and 18 are for extracting only the temperature drift component by cutting the output corresponding to the reference pixel 12, the noise generated by the sample hold circuit 13 and the bias generation circuit 14. In general, in an infrared detector aiming at high S / N, the noise of the power supply system is sufficiently reduced by the power supply circuit, and the noise from the detection unit becomes the main noise component of the apparatus. The output of the bias generation circuit 14 is included as a noise component generated in the reference pixel 12, but the noise component of the reference pixel 12 and the noise component of the pixel 1 are uncorrelated. For this reason, the noise in the output from the differential integration circuit 7 is √2 times that in the case where only the output of the pixel 1 is integrated. On the other hand, changes in the output of the detection unit due to changes in the environmental temperature and changes in the power supply voltage due to fluctuations in power supply circuit characteristics due to changes in the environmental temperature are generally moderate, more than a few seconds. Therefore, the band of the line through which the bias voltage passes may be sufficiently narrower than the band necessary for the signal line for detecting infrared rays. Therefore, if low-pass filters 16 and 18 are inserted on the line that feeds back from the output terminal 10 to the input terminal of the differential integration circuit 7 so as to pass only the temperature drift component, the increase in noise due to the differential is suppressed. be able to. Note that a typical value of the noise bandwidth for the pixel of such an infrared solid-state imaging device is several KHz, and therefore, the cut-off frequency may be set to 1/100 or less. From the viewpoint of element temperature fluctuation, the fluctuation period is fast and on the order of seconds, so it is sufficient to have a band of several Hz. In the present embodiment, the low-pass filters 16 and 18 are inserted before and after the buffer 17, but only one of them may be used.

An example of the circuit configuration of the low-pass filters 16 and 18 is shown in FIGS. 8 (a) and 8 (b). The configuration shown below can be used for both the low-pass filters 16 and 18.
The low-pass filter of FIG. 8A uses a passive element, 30 is a resistor or reactance, and 31 is a capacitor. As a filter (= low-pass filter 18) inserted on the rear side of the buffer amplifier 17, a reactance having no DC voltage drop is desirable. On the other hand, as the filter (= low-pass filter 16) provided on the front side of the buffer amplifier 17, it is desirable to use a resistor that can easily obtain the characteristics as a filter. The resistor 30 may be replaced with the internal resistance of the power supply circuit 6 or the internal resistance of the buffer amplifier 17. The low-pass filter in FIG. 8B is an integrating circuit using an operational amplifier 35 which is an active element, and since this circuit configuration is also common as a low-pass filter, detailed description thereof is omitted.

  The low-pass filters 16 and 18 in the present invention are not limited to those illustrated in FIGS. 8A and 8B, and other filters (for example, a switched capacitor circuit) may be used. Further, the low-pass filters 16 and 18 may be provided only on either the front side or the rear side of the buffer amplifier 17, but in this case, the front filter (= filter 16) of the buffer amplifier 17 may be left. preferable. This is because a large current flows to the rear side of the buffer amplifier 17, and a voltage drop at the filter causes a fluctuation of the bias voltage.

(Pixel, reference pixel)
FIGS. 11A and 11B are a cross-sectional view and a perspective view schematically showing a structural example of the pixel 1 in the thermal infrared solid-state imaging device according to the present embodiment. In the pixel 1, a PN junction diode 902 serving as a temperature sensor is supported on a hollow portion 1103 provided on the silicon substrate 1102 by two long support legs 1101, and an electrode wiring 1104 of the diode 902 is supported on the support legs 1101. Embedded in. A plurality of PN junction diodes 902 are preferably connected in series in order to increase sensitivity. The hollow portion 1103 increases the thermal resistance between the diode 902 and the silicon substrate 1102 to form a heat insulating structure. In this example, the diode 902 is formed on the SOI layer of the SOI substrate, and the buried oxide film under the SOI layer is a part of the structure that supports the hollow structure. In addition, the infrared absorption structure 1106 that is in thermal contact with the diode portion has a structure that protrudes above the support leg 1101 so that infrared rays incident from above can be efficiently absorbed. In FIG. 11B, in order to make the structure of the lower part easy to understand, the structure is drawn excluding the infrared absorption structure in the front part of the figure.

  When infrared rays are incident on the pixel 1, the infrared rays are absorbed by the infrared absorption structure 1106, the temperature of the pixel 1 is changed by the heat insulation structure, and the forward voltage characteristics of the diode 902 serving as a temperature sensor are changed. By reading the change amount of the forward voltage characteristic of the diode 902 with a predetermined detection circuit, an output signal corresponding to the amount of incident infrared rays can be taken out. The thermal infrared solid-state imaging device has a structure in which a large number of pixels 1 are two-dimensionally arranged and accessed in order. In such an element, the uniformity of characteristics between pixels is important, but the forward voltage of the diode and its temperature dependence have very little variation between solids, and a diode is used as a temperature sensor for a thermal infrared imaging device. This is particularly effective for achieving uniform characteristics. In the present invention, the infrared absorption structure may be any structure that absorbs infrared light incident on the element and causes the temperature sensor to rise in temperature, and is not limited to the above form. Moreover, in this invention, the heat insulation structure should just be a structure which prevents the temperature change of the temperature sensor by infrared absorption, and is not limited to said hollow structure.

(Reference pixel 12, reference signal output circuit 40)
As a circuit configuration for outputting a reference signal, in this embodiment, the reference pixel is configured by excluding the heat insulation structure and / or the infrared absorption structure from the left one column of pixels in the pixel area. Only a change in element temperature can be detected by using a pixel having substantially the same structure as that of the pixel 1 except that one or both of the heat insulation structure and the infrared absorption structure is eliminated. If the sensitivity to infrared absorption falls to a necessary level, either the heat insulation structure or the infrared absorption structure may be left. The reference pixel 12 is driven with a constant current by the power source 6 and the constant current source 2, and outputs a voltage across the constant current source 2 as a reference signal V _pr . That is, the reference signal output circuit 40 is configured by the reference pixel 12, the power source 6 and the constant current source 2. By outputting a reference signal by the reference pixel 12, the response characteristic of the pixel 1 with respect to the element temperature can be accurately simulated, and highly accurate temperature drift correction can be performed. In particular, as in the present embodiment, if the reference pixel 12 is formed by excluding the heat insulation structure and / or the infrared absorption structure from a part of the pixels in the pixel area, deviation of characteristics due to slight differences in manufacturing conditions can be prevented. Thus, the temperature response characteristic of the pixel 1 can be simulated with higher accuracy. In that case, it is preferable to provide the reference pixel on one horizontal or vertical side of the pixel area so that the signal of the reference pixel does not appear in the captured image. In the reference signal output circuit, it is of course possible to use a thermistor instead of a reference pixel.

  In this embodiment, since the reference pixels 12 are provided in one column at the left end of the pixel area, the signal of the reference pixel 12 is sampled and held every horizontal scan, that is, every output for one row of pixels. Note that the reference pixels 12 may be provided in a plurality of columns instead of only one column as shown in FIG. By providing a plurality of reference pixels 12 and averaging the reference pixel output signals, random noise generated at the reference pixels 12 can be suppressed.

(Sample hold circuit 13)
The sample hold circuit 13 is not particularly limited, and for example, the same sample hold circuit 28 as shown in FIG. 7 can be used. Another example of the sample hold circuit 13 is shown in FIG. FIG. 9 is a well-known example using an operational amplifier 33, and a sample and hold switch 35 is connected to a sample and hold capacitor 34. A clock is supplied to the gate of the sample hold switch 35 at the output timing of the reference pixel 12, and the switch is opened.

  FIG. 10 shows a circuit example in the case where the outputs of the plurality of reference pixels 12 are averaged and sampled and held. A low-pass filter as shown in FIG. 8 (a) or (b) is inserted before the circuit of FIG. Since the reference pixels to be averaged are output continuously with respect to time, the time constant of the filter may be set so that the output change with respect to time is suppressed.

  In the present embodiment, the sample hold circuit 13, the bias generation circuit 14, the low pass filters 16, 18 and the buffer amplifier 17 may be provided on the same chip as the pixel 1 or may be provided outside the chip. Needless to say. The function of the buffer amplifier 18 may be included in the bias generation circuit 14. In addition, the connection configuration of the positive and negative inputs of the differential integration circuit 7 and the bias generation circuit 14 is not limited to this example as long as the change in the output of the buffer amplifier 11 corresponding to the reference pixel 12 is suppressed. For example, all the directions of plus and minus side inputs in FIG. 1 may be reversed. Only one of them may be reversed, and the buffer amplifier 17 may include an inverting amplifier.

Embodiment 2
FIG. 5 is a circuit diagram showing a thermal infrared solid-state imaging device according to the second embodiment. The present embodiment is different from the first embodiment in that the reference pixels 12 are arranged in one row below the end of the pixel area. The other points are the same as in the first embodiment. In the first embodiment, the reference signal output is sampled and held for each horizontal scan, that is, for each output of one row. However, in this embodiment, the reference signal output is generated for each frame, that is, for every pixel readout cycle. Sample hold.

  In this example as well, a plurality of rows of reference pixels may be provided and their reference pixel signal outputs may be averaged. By averaging, random noise generated in the reference pixel can be suppressed. Further, the reference pixel signal output may be sampled and held only for pixels in a specific row among the reference pixels provided in a plurality of rows.

Embodiment 3
FIG. 6 is a circuit diagram showing a thermal infrared solid-state imaging device according to the third embodiment. In the present embodiment, load resistors 23 and 24 are used as the first and second constant current means. Other points are the same as in the first embodiment. If the load resistors 23 and 24 are made substantially the same and the resistances of the drive line 3 and the bias line 19 are made substantially the same, the same effect as in the first embodiment can be obtained.

  In the first to third embodiments, the example in which the infrared absorption structure and / or the heat insulation structure is excluded from a part of the photosensitive pixels in the pixel area is described as the reference pixel. However, the present invention is not limited thereto. Not. For example, if a reference signal output circuit capable of outputting a signal corresponding to the element temperature is connected to the input of the bias line through a configuration as shown in FIG. 2, for example, the reference signal output circuit itself is outside the pixel area. Also, the same effects as in the first to third embodiments can be obtained.

Embodiment 4
FIG. 12 is a block diagram showing an example of an infrared camera 50 using the thermal infrared solid-state imaging device 53 according to the first to third embodiments. When the shutter 52 is opened, infrared light incident from the imaging target is condensed on the pixel area of the infrared solid-state image sensor 53 by the lens 51, and an image signal is output from the infrared solid-state image sensor 53. The output image signal is amplified by the amplifier circuit 54 and output to the monitor 58 via the A / D conversion circuit 55, the digital signal processor (DSP) 56 and the D / A conversion / amplification circuit 55.

  According to the infrared camera according to the present embodiment, since the thermal infrared solid-state imaging device 53 according to the first to third embodiments is used, the offset distribution and temperature drift due to the drive line are suppressed, and the environmental temperature changes. Regardless, a uniform image can be acquired stably. Further, since the bias voltage in the image pickup device 53 is automatically adjusted, there is little variation in the voltage level of the device output, and problems such as clipping in the amplifier circuit 54 and the D / A / amplifier circuit 57 are suppressed.

FIG. 1 is a circuit diagram showing a thermal infrared solid-state imaging device according to Embodiment 1 of the present invention. FIG. 2 is a circuit diagram showing a part of the thermal infrared solid-state imaging device according to the first embodiment. FIG. 3 is a circuit diagram showing an example of a bias generation circuit used in the present invention. 4, the relationship between the input voltage V _b of the reference pixel output voltage V _s and the bias line is a graph schematically showing. FIG. 5 is a circuit diagram showing a thermal infrared solid-state imaging device according to Embodiment 2 of the present invention. FIG. 6 is a circuit diagram showing a thermal infrared solid-state imaging device according to Embodiment 3 of the present invention. FIG. 7 is a circuit diagram showing an example of the differential integration circuit used in the present invention. FIGS. 8A and 8B are circuit diagrams showing examples of low-pass filters used in the present invention. FIG. 9 is a circuit diagram showing an example of a sample and hold circuit used in the present invention. FIG. 10 is a circuit diagram showing another example of the sample and hold circuit used in the present invention. FIGS. 11A and 11B are a cross-sectional view (a) and a perspective view (b) showing an example of a pixel structure of a thermal infrared solid-state imaging device according to the present invention. FIG. 12 is a block diagram showing an infrared camera according to the fourth embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 pixel, 2 1st group constant current source (1st group constant current means), 3 drive line, 4 vertical drive circuit, 7 differential integration circuit, 8 horizontal drive circuit, 12 reference pixel, 13 sample hold circuit , 14 Bias generation circuit, 16 and 18 Low-pass filter, 17 Buffer amplifier, 20 Second group constant current source (second group constant current means).

Claims (11)

A pixel area having a heat insulating structure and an infrared absorption structure, wherein at least one or more diodes connected in series constitute a photosensitive pixel, and the photosensitive pixel is two-dimensionally arranged;
A drive line in which one pole of the photosensitive pixel is commonly connected for each row;
A vertical scanning circuit that sequentially selects the drive lines and connects them to a power source;
The other poles of the photosensitive pixels are connected in common to each column, and a signal line having a first group constant current means connected to each end thereof;
A bias line that connects in parallel a second group of constant current means provided for each column of the pixel area, and generates a voltage drop substantially the same as the drive line;
A differential integration circuit that is provided for each column of the pixel area, and that integrates and outputs a difference in voltage between both ends of the first group constant current generating means and the second group constant current generating means;
A thermal infrared solid-state imaging device having a horizontal scanning circuit that selects an output signal of the differential integration circuit for each column and guides it to an output terminal;
Furthermore, it has a reference signal output circuit that outputs a reference signal that changes substantially according to a temperature change of the entire element,
A differential signal between a voltage at a predetermined position on the bias line and the reference signal is extracted, a bias voltage corresponding to a difference between the differential signal and a reference voltage is generated, and the bias voltage is input to the bias line. Thermal infrared solid-state image sensor.   A thermal infrared solid-state imaging device, wherein the reference signal output circuit has a reference pixel having substantially the same structure as the photosensitive pixel except that either one or both of a heat insulating structure and an infrared absorption structure is not included.   The thermal infrared solid-state imaging device according to claim 2, wherein a reference pixel is formed by excluding a heat insulating structure and / or an infrared absorbing structure from a part of photosensitive pixels in the pixel area. A pixel area having a heat insulating structure and an infrared absorption structure, wherein at least one or more diodes connected in series constitute a photosensitive pixel, and the photosensitive pixel is two-dimensionally arranged;
A reference pixel configured by excluding a heat insulating structure and / or an infrared absorbing structure from at least a part of the photosensitive pixel of the pixel area;
A drive line in which one pole of the photosensitive pixel and the reference pixel is commonly connected for each row;
A vertical scanning circuit that sequentially selects the drive lines and connects them to a power source;
A signal line in which the other poles of the photosensitive pixel and the reference pixel are connected in common to each column, and a constant current converting means of the first group is connected to each end thereof,
A bias line that connects in parallel a second group of constant current means provided for each column of the pixel area, and generates a voltage drop substantially the same as the drive line;
A differential integration circuit that is provided for each column of the pixel area, and that integrates and outputs a difference in voltage between both ends of the first group constant current generating means and the second group constant current generating means;
A thermal infrared solid-state imaging device having a horizontal scanning circuit that selects an output signal of the differential integration circuit for each column and guides it to an output terminal;
Furthermore, a sample hold circuit that samples and holds a reference pixel output signal that is a signal corresponding to the reference pixel among the output signals of the differential integration circuit;
A bias generation circuit that compares the reference pixel output signal with a reference voltage, generates a bias voltage according to the difference, and outputs the bias voltage to the bias line;
The subtraction polarity of the differential integration circuit and the subtraction polarity between the reference pixel output signal and the reference voltage in the bias generation circuit are selected in a direction in which a change in the reference pixel output signal is suppressed. A thermal infrared solid-state imaging device.   5. The thermal infrared solid according to claim 4, wherein a product of a circuit gain from the differential integration circuit to the output terminal and a circuit gain from the sample hold circuit to the bias line is 10 or more. Image sensor.   5. The thermal infrared solid-state imaging device according to claim 4, wherein each of a gain from the differential integration circuit to the output terminal and a circuit gain from the sample hold circuit to the bias line is 10 or more.   8. The thermal infrared solid-state imaging device according to claim 4, wherein there are a plurality of the reference pixels, and the outputs of the reference pixels are averaged and sampled and held.   The differential integration circuit includes a differential voltage-current conversion amplifier and a capacitor connected to an output terminal of the differential voltage-current conversion amplifier and periodically reset, and the differential voltage-current conversion amplifier provides a difference between input signals. The thermal infrared solid-state imaging device according to claim 1, wherein the current is converted into a current, and the current is integrated in the capacitor.   9. The thermal infrared solid-state imaging device according to claim 1, wherein the reference pixel is formed on at least one side in a vertical or horizontal direction in the pixel area.   The thermal infrared solid-state imaging device according to any one of claims 1 to 9, wherein the bias voltage is input to the bias line through a low-pass filter and / or a buffer circuit. The thermal infrared solid-state imaging device according to any one of claims 1 to 10,
An optical system for forming an infrared image on the thermal infrared solid-state imaging device;
An amplification circuit for amplifying an image signal output from the thermal infrared solid-state imaging device;
An output terminal for outputting an image signal amplified by the amplifier circuit to a monitor;
With infrared camera.

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