JP2005191197A - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
JP2005191197A
JP2005191197A JP2003429381A JP2003429381A JP2005191197A JP 2005191197 A JP2005191197 A JP 2005191197A JP 2003429381 A JP2003429381 A JP 2003429381A JP 2003429381 A JP2003429381 A JP 2003429381A JP 2005191197 A JP2005191197 A JP 2005191197A
Authority
JP
Japan
Prior art keywords
light emitting
light
emitting element
phosphor
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003429381A
Other languages
Japanese (ja)
Other versions
JP3881653B2 (en
Inventor
Mitsuo Yanagisawa
美津夫 柳沢
Toru Miyake
徹 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2003429381A priority Critical patent/JP3881653B2/en
Publication of JP2005191197A publication Critical patent/JP2005191197A/en
Application granted granted Critical
Publication of JP3881653B2 publication Critical patent/JP3881653B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device that can efficiently convert wavelength in a light emitting from a light emitting element by using a fluorescent substance and increase radiation intensity, and that is superior in optical characteristic such as axial luminous intensity, luminance, color rendering properties, etc. <P>SOLUTION: The light emitting device is provided with a substrate 1 having a placement part 1a wherein a light emitting element 5 is placed on its upper main surface; a frame 2 that is connected to the outer periphery of the upper main surface of the substrate 1 so as to surround the placement part 1a, and wherein an inner circumferential surface 2a works as a reflection surface for reflecting a light emitting from the light emitting element 5; a wiring conductor wherein one end formed on the upper main surface of the substrate 1 is electrically connected with an electrode of the light emitting element 5, and the other end thereof is led to the outer surface of the substrate 1; the light emitting element 5 that is placed on the placement part 1a and is electrically connected with the wiring conductor; a light transmitting member 3 that is formed inside the frame 1 so as to cover the light emitting element 5; and a fluorescent substance layer 7 that covers the light transmitting member 3 and includes a fluorescent substance for wavelength conversion of a light of the light emitting element 5. The upper surfaces of the light transmitting member 3 and the fluorescent substance layer 7 are roughened. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、発光素子から発光される光を蛍光体で波長変換し外部に発光する発光装置に関する。   The present invention relates to a light emitting device that converts the wavelength of light emitted from a light emitting element with a phosphor and emits light to the outside.

従来の発光ダイオード(LED)等の発光素子15から発光される近紫外光や青色光等の光を赤色,緑色,青色,黄色等の複数の蛍光体14で長波長変換して白色発光する発光装置を図2に示す。図2において、発光装置は、上面の中央部に発光素子15を載置するための載置部11aを有し、載置部11aおよびその周辺から発光装置の内外を電気的に導通接続するリード端子やメタライズ配線等からなる配線導体(図示せず)が形成された絶縁体からなる基体11と、基体11上面に接着固定され、上側開口が下側開口より大きい貫通孔が形成されているとともに、内周面12aが発光素子15が発光する光を反射する反射面とされている枠体12と、枠体12の内部に充填され発光素子15が発光する光を励起し長波長変換する蛍光体14を含有した透光性部材13と、載置部11aに載置固定された発光素子15とから主に構成されている。   Light emission that emits white light by converting long wavelengths of light such as near-ultraviolet light and blue light emitted from a light emitting element 15 such as a conventional light emitting diode (LED) into a long wavelength with a plurality of phosphors 14 such as red, green, blue, and yellow. The apparatus is shown in FIG. In FIG. 2, the light emitting device has a mounting portion 11a for mounting the light emitting element 15 at the center of the upper surface, and leads that electrically connect the inside and outside of the light emitting device from the mounting portion 11a and its periphery. A base 11 made of an insulator on which a wiring conductor (not shown) made of a terminal, metallized wiring, or the like is formed, and a through hole that is bonded and fixed to the upper surface of the base 11 and whose upper opening is larger than the lower opening are formed. The frame 12 in which the inner peripheral surface 12a is a reflecting surface that reflects the light emitted from the light emitting element 15, and the fluorescence that excites the light emitted from the light emitting element 15 that is filled in the frame 12 to convert the light into a long wavelength. It is mainly composed of a translucent member 13 containing the body 14 and a light emitting element 15 mounted and fixed on the mounting portion 11a.

基体11は、酸化アルミニウム質焼結体(アルミナセラミックス)や窒化アルミニウム質焼結体,ムライト質焼結体,ガラスセラミックス等のセラミックス、またはエポキシ樹脂等の樹脂から成る。基体11がセラミックスから成る場合、その上面に配線導体がタングステン(W),モリブデン(Mo)−マンガン(Mn)等から成る金属ペーストを高温で焼成して形成される。また、基体11が樹脂から成る場合、銅(Cu)や鉄(Fe)−ニッケル(Ni)合金等から成るリード端子がモールド成型されて基体11の内部に設置固定される。   The substrate 11 is made of an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, ceramics such as glass ceramics, or a resin such as epoxy resin. When the substrate 11 is made of ceramic, the wiring conductor is formed on its upper surface by firing a metal paste made of tungsten (W), molybdenum (Mo) -manganese (Mn), etc. at a high temperature. When the base 11 is made of a resin, lead terminals made of copper (Cu), iron (Fe) -nickel (Ni) alloy, etc. are molded and fixed inside the base 11.

また、枠体12は、上側開口が下側開口より大きい貫通孔が形成されるとともに内周面12aに光を反射する反射面が設けられる枠状となっている。具体的には、アルミニウム(Al)やFe−Ni−コバルト(Co)合金等の金属、アルミナセラミックス等のセラミックスまたはエポキシ樹脂等の樹脂から成り、切削加工や金型成型または押し出し成型等の成形技術により形成される。   Further, the frame body 12 has a frame shape in which a through hole having an upper opening larger than a lower opening is formed and a reflection surface for reflecting light is provided on the inner peripheral surface 12a. Specifically, it consists of metals such as aluminum (Al) and Fe-Ni-cobalt (Co) alloys, ceramics such as alumina ceramics or resins such as epoxy resins, and molding technologies such as cutting, die molding or extrusion molding. It is formed by.

さらに、枠体12の反射面は、貫通孔の内周面12aを研磨して平坦化することにより、あるいは、貫通孔の内周面12aにAl等の金属を蒸着法やメッキ法により被着することにより形成される。そして、枠体12は、半田,銀(Ag)ロウ等のロウ材または樹脂接着材等の接合材により、載置部11aを枠体12の内周面12aで取り囲むように基体11の上面に接合される。   Further, the reflecting surface of the frame 12 is coated by polishing or flattening the inner peripheral surface 12a of the through hole, or by depositing a metal such as Al on the inner peripheral surface 12a of the through hole by vapor deposition or plating. It is formed by doing. The frame 12 is formed on the upper surface of the base 11 so that the mounting portion 11a is surrounded by the inner peripheral surface 12a of the frame 12 by a soldering material such as solder, silver (Ag) brazing, or a bonding material such as a resin adhesive. Be joined.

そして、載置部11aの周辺に配置した配線導体と発光素子15とをボンディングワイヤや金属ボール等の電極16を介して電気的に接続し、しかる後、蛍光体14を含有するエポキシ樹脂やシリコーン樹脂等の透光性部材13をディスペンサー等の注入機で発光素子15を覆うように枠体12の内部に充填しオーブンで熱硬化させることで、発光素子15からの光を蛍光体14により長波長変換し所望の波長スペクトルを有する光を取り出せる発光装置となし得る。   Then, the wiring conductor arranged around the mounting portion 11a and the light emitting element 15 are electrically connected through the electrode 16 such as a bonding wire or a metal ball, and then an epoxy resin or silicone containing the phosphor 14 is used. A light-transmitting member 13 such as resin is filled into the frame body 12 so as to cover the light-emitting element 15 with an injection machine such as a dispenser, and is thermally cured in an oven. A light-emitting device capable of extracting light having a desired wavelength spectrum after wavelength conversion can be obtained.

また、図2に示す発光装置の構成に加え、図3に示すように発光素子25を覆うように設けられている透光性部材23の上部に、発光素子25が発光する光を励起し長波長側に変換する蛍光体24を透明樹脂27に含有した蛍光体層23を形成する構成が提案されている(下記の特許文献1参照)。   Further, in addition to the structure of the light emitting device shown in FIG. 2, the light emitted from the light emitting element 25 is excited on the upper part of the translucent member 23 provided so as to cover the light emitting element 25 as shown in FIG. A configuration has been proposed in which a phosphor layer 23 containing a phosphor 24 to be converted to the wavelength side in a transparent resin 27 is formed (see Patent Document 1 below).

この構成によれば、発光素子から発光される光が蛍光体層23を通過する行路長を一定に近づけることができるために蛍光体層23における波長変換効率を均一にして発光むらを低減することができる。
特許第3065263号公報
According to this configuration, the path length through which the light emitted from the light emitting element passes through the phosphor layer 23 can be made nearly constant, so that the wavelength conversion efficiency in the phosphor layer 23 is made uniform and uneven emission is reduced. Can do.
Japanese Patent No. 3052663

近年、発光装置は発光強度をより高めることが求められている。しかしながら、発光強度を高めるために電流値を高めると、発光素子の発熱が大きくなり、発光素子が高温となる結果、発光効率が低下するという問題点があった。   In recent years, light emitting devices have been required to further increase the light emission intensity. However, when the current value is increased in order to increase the light emission intensity, heat generation of the light emitting element is increased, and as a result, the light emitting element is heated to a high temperature.

また、発光素子25を被覆するとともに発光素子25からの光を波長変換するための蛍光体24を含有した透明樹脂27において、蛍光体24の含有率を上げて波長変換の効率を向上させようとすると、光が蛍光体24によって妨害され易くなるため、放射光強度を向上できないという問題点を有していた。   Further, in the transparent resin 27 that covers the light-emitting element 25 and contains the phosphor 24 for wavelength-converting light from the light-emitting element 25, an attempt is made to improve the wavelength conversion efficiency by increasing the content of the phosphor 24. Then, since the light is easily disturbed by the phosphor 24, there is a problem that the intensity of the emitted light cannot be improved.

また逆に、蛍光体24の含有率を下げると、発光素子25の光によって照射される蛍光体24の割合が減少し、蛍光体24の発光する確率が著しく劣化するとともに波長変換の効率が低下して所望の波長の光が得られず、その結果、放射光強度の向上ができないという問題点を有していた。   Conversely, when the content of phosphor 24 is decreased, the proportion of phosphor 24 irradiated with light from light emitting element 25 decreases, the probability that phosphor 24 emits light is significantly deteriorated, and the efficiency of wavelength conversion decreases. As a result, there is a problem that light having a desired wavelength cannot be obtained, and as a result, the intensity of emitted light cannot be improved.

さらに、蛍光体24を含有する蛍光体層27の中央部と縁部における光強度の差が大きくなり、発光面における色むらや、照射面における照度分布のむらが生じるという問題点を有していた。   Further, the difference in light intensity between the central portion and the edge portion of the phosphor layer 27 containing the phosphor 24 is increased, resulting in uneven color on the light emitting surface and uneven illumination distribution on the irradiated surface. .

さらにまた、波長変換されない光は、外部へそのままの波長で出射されることになり、発光素子25の光が紫外光の場合、人体への影響も心配されるという問題点も有していた。   Furthermore, light that has not been wavelength-converted is emitted to the outside at the same wavelength, and when the light emitted from the light emitting element 25 is ultraviolet light, there is a problem that the human body may be affected.

従って、本発明はかかる従来の問題点に鑑み案出されたものであり、その目的は、発光素子の発光する光を蛍光体により効率よく波長変換するとともに放射光強度を高くすることにより、軸上光度や輝度,演色性等の光特性に優れた発光装置を提供することである。   Accordingly, the present invention has been devised in view of such conventional problems, and the object thereof is to efficiently convert the wavelength of the light emitted from the light emitting element by using a phosphor and to increase the intensity of the emitted light. The object is to provide a light emitting device having excellent light characteristics such as brightness, luminance, and color rendering.

本発明の発光装置は、上側主面に発光素子が載置される載置部を有する基体と、該基体の上側主面の外周部に前記載置部を囲繞するように接合されるとともに内周面が前記発光素子から発光される光を反射する反射面とされている枠体と、一端が前記基体の上側主面に形成されて前記発光素子の電極に電気的に接続されるとともに他端が前記基体の外面に導出された配線導体と、前記載置部に載置されるとともに前記配線導体に電気的に接続された発光素子と、前記枠体の内側に前記発光素子を覆うように設けられている透光性部材と、該透光性部材を被覆する前記発光素子の光を波長変換する蛍光体を含有する蛍光体層とを具備しており、前記透光性部材および前記蛍光体層は、その上面が粗面とされていることを特徴とする。   The light emitting device of the present invention includes a base having a mounting portion on which the light emitting element is mounted on the upper main surface, and an outer peripheral portion of the upper main surface of the base that is joined so as to surround the mounting portion. A frame whose peripheral surface is a reflecting surface that reflects light emitted from the light emitting element, one end formed on the upper main surface of the base, and electrically connected to the electrode of the light emitting element A wiring conductor whose end is led out to the outer surface of the base body, a light emitting element placed on the mounting portion and electrically connected to the wiring conductor, and covering the light emitting element inside the frame body A translucent member provided on the phosphor, and a phosphor layer containing a phosphor that converts the wavelength of light of the light-emitting element that covers the translucent member, the translucent member and the translucent member The upper surface of the phosphor layer is a rough surface.

本発明の発光装置において、好ましくは、前記透光性部材および前記蛍光体層の上面は、算術平均粗さがそれぞれ0.1乃至0.8μmであることを特徴とする。   In the light emitting device of the present invention, it is preferable that arithmetic mean roughness of the upper surfaces of the light transmissive member and the phosphor layer is 0.1 to 0.8 μm, respectively.

本発明の発光装置は、透光性部材はその上面が粗面とされていることから、発光素子から発光された光を透光性部材の上面で散乱させることにより、この光によって照射される蛍光体層中の蛍光体の割合を増加させることができる。その結果、蛍光体の発光する確率を著しく向上させることができ、蛍光体によって波長変換される光の出力を向上させることができる。また、蛍光体層はその上面が粗面とされていることから、蛍光体によって波長変換された光が蛍光体層の外部の空気との界面で全反射されて蛍光体層中に閉じ込められる光を、蛍光体層の上面の様々な角度を有する粗面によって全反射を有効に低減することができ、非常に効率よく光を外側に取り出すことができる。さらに、光を透光性部材の上面および蛍光体層の上面に形成した粗面で適度に散乱させることにより、蛍光体層の中央部と外周部との光強度の差をより小さくすることができる。その結果、発光面における色むらや、照射面における照度分布のむらを抑制することができる。   In the light-emitting device of the present invention, the light-transmitting member has a rough upper surface. Therefore, the light emitted from the light-emitting element is scattered by the upper surface of the light-transmitting member and is irradiated with this light. The ratio of the phosphor in the phosphor layer can be increased. As a result, the probability that the phosphor emits light can be remarkably improved, and the output of light converted in wavelength by the phosphor can be improved. Moreover, since the upper surface of the phosphor layer is rough, the light whose wavelength is converted by the phosphor is totally reflected at the interface with the air outside the phosphor layer and is confined in the phosphor layer. The total reflection can be effectively reduced by the rough surface having various angles on the upper surface of the phosphor layer, and the light can be extracted to the outside very efficiently. Furthermore, the light intensity difference between the central portion and the outer peripheral portion of the phosphor layer can be further reduced by appropriately scattering light on the rough surface formed on the upper surface of the translucent member and the upper surface of the phosphor layer. it can. As a result, uneven color on the light emitting surface and uneven illumination distribution on the irradiated surface can be suppressed.

本発明の発光装置は、透光性部材および蛍光体層の上面は、算術平均粗さがそれぞれ0.1乃至0.8μmであることから、透光性部材の上面で乱反射してより効率よく蛍光体層に照射させ、発光素子から波長変換されずに蛍光体層を透過する光を非常に抑制することできる。よって、例えば発光素子の光が紫外光の場合、紫外光を可視光に効率よく波長変換し、波長変換されずに放射される紫外光を有効に低減して人体への影響が小さい環境性に優れる発光装置を作製することができる。また、発光面における色むらや、照射面における照度分布のむらをより抑制することができる。   In the light emitting device according to the present invention, the upper surfaces of the translucent member and the phosphor layer have arithmetic average roughnesses of 0.1 to 0.8 μm, respectively. The light transmitted through the phosphor layer without being wavelength-converted from the light emitting element can be greatly suppressed. Therefore, for example, when the light emitted from the light emitting element is ultraviolet light, the wavelength of ultraviolet light is efficiently converted into visible light, and the ultraviolet light emitted without wavelength conversion is effectively reduced to reduce environmental impact. An excellent light-emitting device can be manufactured. Further, uneven color on the light emitting surface and uneven illumination distribution on the irradiated surface can be further suppressed.

本発明の発光装置について以下に詳細に説明する。図1は本発明の発光装置の実施の形態の一例を示す断面図である。この図において、1は基体、2は枠体、3は発光素子を覆うように設けられている透光性部材、7は透明樹脂に蛍光体4を含有した蛍光体層である。主としてこれらで発光素子5の発光を方向性をもって外部に発光させ得る発光装置が構成される。   The light emitting device of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of a light emitting device of the present invention. In this figure, 1 is a substrate, 2 is a frame, 3 is a translucent member provided so as to cover the light emitting element, and 7 is a phosphor layer containing the phosphor 4 in a transparent resin. A light emitting device capable of emitting light emitted from the light emitting element 5 to the outside with directionality is mainly constituted by these elements.

本発明における基体1は、アルミナセラミックスや窒化アルミニウム質焼結体,ムライト質焼結体,ガラスセラミックス等のセラミックス、または、エポキシ樹脂等の樹脂から成る。また、基体1は、上側主面に発光素子5を載置する載置部1aを有している。   The substrate 1 in the present invention is made of alumina ceramic, aluminum nitride sintered body, mullite sintered body, ceramic such as glass ceramic, or resin such as epoxy resin. The base body 1 has a mounting portion 1a for mounting the light emitting element 5 on the upper main surface.

載置部1aには、発光素子5が電気的に接続されるための配線導体(図示せず)が形成されている。この配線導体が基体1内部に形成された配線層(図示せず)を介して発光装置の外表面に導出されて外部電気回路基板に接続されることにより、発光素子5と外部電気回路基板とが電気的に接続されることとなる。   A wiring conductor (not shown) for electrically connecting the light emitting element 5 is formed on the mounting portion 1a. The wiring conductor is led out to the outer surface of the light emitting device through a wiring layer (not shown) formed inside the base 1 and connected to the external electric circuit board, whereby the light emitting element 5 and the external electric circuit board are connected. Are electrically connected.

発光素子5を配線導体に接続する方法としては、ワイヤボンディングを介して接続する方法、または、図1に示す発光素子5の下面で半田バンプ等の電極6により接続するフリップチップボンディング方式を用いた方法等が用いられる。好ましくは、フリップチップボンディング方式により接続するのがよい。これにより、配線導体を発光素子5の直下に設けることができるため、発光素子5の周辺の基体1の上面に配線導体を設けるためのスペースを設ける必要がなくなる。よって、発光素子5から発光された光がこの基体1の配線導体のスペースで吸収されて軸上光度が低下するのを有効に抑制することができる。   As a method of connecting the light emitting element 5 to the wiring conductor, a method of connecting via wire bonding, or a flip chip bonding method in which the lower surface of the light emitting element 5 shown in FIG. A method or the like is used. Preferably, the connection is made by a flip chip bonding method. Thereby, since the wiring conductor can be provided directly under the light emitting element 5, it is not necessary to provide a space for providing the wiring conductor on the upper surface of the base 1 around the light emitting element 5. Therefore, it is possible to effectively suppress the light emitted from the light emitting element 5 from being absorbed in the space of the wiring conductor of the base 1 and the on-axis luminous intensity from being lowered.

この配線導体は、例えば、W,Mo,Cu,Ag等の金属粉末のメタライズ層を基体1の表面や内部に形成することによって、Fe−Ni−Co合金等のリード端子を基体1に埋設することによって、または、配線導体が形成された絶縁体から成る入出力端子を基体1に設けた貫通孔に嵌着接合させることによって設けられる。   In this wiring conductor, for example, a metallized layer of a metal powder such as W, Mo, Cu, or Ag is formed on the surface or inside of the base 1 to embed a lead terminal such as an Fe—Ni—Co alloy in the base 1. Or an input / output terminal made of an insulator on which a wiring conductor is formed is fitted and joined to a through-hole provided in the base 1.

なお、配線導体の露出する表面には、Niや金(Au)等の耐食性に優れる金属を1〜20μm程度の厚さで被着させておくのが良く、配線導体の酸化腐食を有効に防止し得るともに、発光素子5と配線導体との接続を強固にし得る。したがって、配線導体の露出表面には、例えば、厚さ1〜10μm程度のNiメッキ層と厚さ0.1〜3μm程度のAuメッキ層とが電解メッキ法や無電解メッキ法により順次被着されているのがより好ましい。   In addition, it is better to deposit a metal with excellent corrosion resistance, such as Ni or gold (Au), with a thickness of about 1 to 20 μm on the exposed surface of the wiring conductor, effectively preventing oxidative corrosion of the wiring conductor. In addition, the connection between the light emitting element 5 and the wiring conductor can be strengthened. Therefore, for example, an Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are sequentially deposited on the exposed surface of the wiring conductor by an electrolytic plating method or an electroless plating method. Is more preferable.

また、基体1の上面には、枠体2が半田,Agロウ等のロウ材やエポキシ樹脂等の接着剤等の接合材により取着される。枠体2は、中央部に貫通孔が形成されているとともに内周面2aが発光素子5が発光する光を反射する反射面とされている。   Further, the frame 2 is attached to the upper surface of the base 1 by a bonding material such as solder, a brazing material such as Ag brazing, or an adhesive such as an epoxy resin. The frame body 2 has a through hole formed in the center thereof, and the inner peripheral surface 2a is a reflection surface that reflects light emitted from the light emitting element 5.

枠体2は、切削加工や金型成形等を行うことにより形成される。あるいは、内周面2aに、例えば、メッキや蒸着等によりAl,Ag,Au,白金(Pt),チタン(Ti),クロム(Cr),Cu等の高反射率の金属薄膜を形成することにより反射面を形成してもよい。なお、反射面がAgやCu等の酸化により変色し易い金属からなる場合には、その表面に、例えば厚さ1〜10μm程度のNiメッキ層と厚さ0.1〜3μm程度のAuメッキ層とが電解メッキ法や無電解メッキ法により順次被着されているのが良い。これにより反射面の耐腐食性が向上する。   The frame body 2 is formed by performing a cutting process, mold forming, or the like. Alternatively, by forming a highly reflective metal thin film such as Al, Ag, Au, platinum (Pt), titanium (Ti), chromium (Cr), or Cu on the inner peripheral surface 2a by, for example, plating or vapor deposition. A reflective surface may be formed. When the reflecting surface is made of a metal that is easily discolored by oxidation such as Ag or Cu, for example, a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer having a thickness of about 0.1 to 3 μm are formed on the surface. It is preferable that the electrodes are sequentially deposited by electrolytic plating or electroless plating. This improves the corrosion resistance of the reflective surface.

また、枠体2の内周面2aの表面の算術平均粗さRaは、0.1μm以下であるのが良く、これにより発光素子5から発光された光を良好に発光装置の上側に反射することができる。Raが0.1μmを超える場合、発光素子5から発光された光を枠体2の内周面2aで良好に発光装置の上側に反射するのが困難になるとともに発光装置の内部で乱反射し易くなる。その結果、発光装置の内部における光の損失が大きく成り易いとともに、所望の放射角度で光を発光装置の外部に放射することが困難になる。   The arithmetic average roughness Ra of the inner peripheral surface 2a of the frame body 2 is preferably 0.1 μm or less, so that the light emitted from the light emitting element 5 is favorably reflected to the upper side of the light emitting device. Can do. When Ra exceeds 0.1 μm, it becomes difficult to favorably reflect the light emitted from the light emitting element 5 to the upper side of the light emitting device on the inner peripheral surface 2a of the frame body 2 and to easily diffuse diffusely inside the light emitting device. . As a result, the loss of light inside the light emitting device tends to be large, and it becomes difficult to emit light outside the light emitting device at a desired radiation angle.

さらに、内周面2aは、例えば、縦断面形状が、上側に向かうにともなって外側に広がった図1に示すような直線状の傾斜面、上側に向かうにともなって外側に広がった曲面状の傾斜面等の形状が挙げられる。   Furthermore, the inner peripheral surface 2a has, for example, a linear inclined surface as shown in FIG. 1 that spreads outward as it goes upward, and a curved surface that spreads outward as it goes upward. Examples of the shape include an inclined surface.

さらにまた、枠体2は、基体1上面の載置部1a以外のいかなる部位に取着されてもよいが、発光素子5の周囲に所望の面精度、例えば、発光装置の縦断面において、発光素子5を間に挟んで発光素子5の両側に設けられた内周面2aが対称になっている状態で取着されるのがよい。これにより、発光素子5から透光性部材3を透して横方向等に発光された光や蛍光体4から下側に放出された光を内周面2aで均一にむらなく反射させることができ、透光性部材3の上部に形成する蛍光体層7に均一に入射させることができ、軸上光度および輝度さらには演色性等を効果的に向上させることができる。   Furthermore, the frame body 2 may be attached to any part other than the mounting portion 1a on the upper surface of the base body 1. However, the frame body 2 has a desired surface accuracy around the light emitting element 5, for example, light emission in a longitudinal section of the light emitting device. It is preferable that the inner peripheral surface 2a provided on both sides of the light emitting element 5 is symmetric with the element 5 interposed therebetween. Thereby, the light emitted from the light emitting element 5 through the translucent member 3 in the lateral direction or the light emitted downward from the phosphor 4 can be uniformly and uniformly reflected by the inner peripheral surface 2a. In addition, the light can be uniformly incident on the phosphor layer 7 formed on the upper part of the translucent member 3, and the on-axis luminous intensity, luminance, color rendering, etc. can be effectively improved.

透光性部材3は、発光素子5との屈折率差が小さく、紫外領域から可視光領域の光に対して透過率の高いものから成るのがよい。例えば、透光性部材3は、シリコーン樹脂、エポキシ樹脂またはユリア樹脂等の透明樹脂、あるいは低融点ガラスやゾル−ゲルガラス等から成る。これにより、発光素子5と透光性部材3との屈折率差により光の反射損失が発生するのを有効に抑制することができ、発光装置の外部へ高効率で所望の放射強度や角度分布で光を放射することのできる発光装置を提供できる。また、このような透光性部材3は、ディスペンサー等の注入機で発光素子5を覆うように枠体2の内側に充填されオーブン等で熱硬化され形成される。   The translucent member 3 is preferably made of a material having a small refractive index difference from the light emitting element 5 and having a high transmissivity with respect to light in the ultraviolet region to the visible light region. For example, the translucent member 3 is made of a transparent resin such as a silicone resin, an epoxy resin, or a urea resin, low-melting glass, sol-gel glass, or the like. Thereby, it is possible to effectively suppress the occurrence of light reflection loss due to the difference in refractive index between the light emitting element 5 and the translucent member 3, and desired radiation intensity and angular distribution with high efficiency to the outside of the light emitting device. A light emitting device that can emit light can be provided. Moreover, such a translucent member 3 is filled inside the frame body 2 so as to cover the light emitting element 5 with an injection machine such as a dispenser, and is thermally cured in an oven or the like.

本発明の蛍光体層7は、発光素子5からの光を波長変換することのできる蛍光体4を含有するエポキシ樹脂やシリコーン樹脂等の透明樹脂から成る。蛍光体層7は、ディスペンサー等の注入機で透光性部材3を覆うように枠体2の内部に充填され、オーブン等で熱硬化されることで、発光素子5からの光を蛍光体4により波長変換し所望の波長スペクトルを有する光を取り出すことができる。   The phosphor layer 7 of the present invention is made of a transparent resin such as an epoxy resin or a silicone resin containing the phosphor 4 capable of converting the wavelength of light from the light emitting element 5. The phosphor layer 7 is filled inside the frame body 2 so as to cover the translucent member 3 with an injection machine such as a dispenser, and is thermally cured in an oven or the like, so that light from the light emitting element 5 is converted into the phosphor 4. The light having a desired wavelength spectrum can be extracted by converting the wavelength.

また、透光性部材3の上面および蛍光体層7の上面は粗面とされている。これにより、発光素子5から発せられた光が、透光性部材3を透過して、蛍光体層7に含まれる蛍光体4に入射する。そのときに、透光性部材3の上面が粗面であるので、入射される光は散乱光となり、この光によって照射される蛍光体4の割合を増加させることができる。また、透光性部材3の上面で光を散乱させることで、蛍光体4に当たる割合が増え、波長変換されずに透過する光を抑制することができる。よって、高効率に波長変換し、その結果、発光装置の波長変換後の放射光強度を高められ、軸上光度や輝度等の光特性を良好なものとし得る。さらに、蛍光体層7の上面を粗面にすることにより、蛍光体層7の内部に閉じ込められる蛍光体4により波長変換された光が空気との界面において全反射することを抑制することができる。   Further, the upper surface of the translucent member 3 and the upper surface of the phosphor layer 7 are rough. Thereby, the light emitted from the light emitting element 5 passes through the translucent member 3 and enters the phosphor 4 included in the phosphor layer 7. At that time, since the upper surface of the translucent member 3 is rough, the incident light becomes scattered light, and the ratio of the phosphor 4 irradiated by this light can be increased. Moreover, by scattering light on the upper surface of the translucent member 3, the ratio of hitting the phosphor 4 increases, and light transmitted without wavelength conversion can be suppressed. Therefore, wavelength conversion can be performed with high efficiency, and as a result, the intensity of radiated light after wavelength conversion of the light emitting device can be increased, and optical characteristics such as on-axis luminous intensity and luminance can be improved. Furthermore, by making the upper surface of the phosphor layer 7 rough, it is possible to suppress the total reflection of light converted in wavelength by the phosphor 4 confined inside the phosphor layer 7 at the interface with air. .

また、透光性部材3の上面で光を散乱させることで、蛍光体層7の中央部と縁部における光強度差を小さくすることができる。その結果、外部へ出射する光の波長を制御し、演色性等の色特性を良好なものとし得る。   Moreover, the light intensity difference between the central portion and the edge portion of the phosphor layer 7 can be reduced by scattering light on the upper surface of the translucent member 3. As a result, the wavelength of light emitted to the outside can be controlled, and color characteristics such as color rendering can be improved.

透光性部材3の上面および蛍光体層7の上面に形成される粗面とは、算術平均粗さが
0.02μm以上のことであり、好ましくは、透光性部材3の上面および蛍光体層7の上面は、算術平均粗さがそれぞれ0.1乃至0.8μmであるのが望ましい。0.8μmを超える場合、粗面の隙間で光が閉じ込められ、光が透光性部材3から蛍光体層7へ入射する割合や、蛍光体層7から空気中に出射される割合が減少しやすくなり、発光装置の軸上光度を良好なものとし難い。一方、0.1μm未満の場合、散乱光となる割合が低減しやすく、軸上光度や輝度,演色性等の光特性を良好なものとし難い。
The rough surface formed on the upper surface of the translucent member 3 and the upper surface of the phosphor layer 7 is an arithmetic average roughness.
Preferably, the arithmetic average roughness of the upper surface of the translucent member 3 and the upper surface of the phosphor layer 7 is 0.1 to 0.8 μm, respectively. When the thickness exceeds 0.8 μm, light is confined in the gap between the rough surfaces, and the ratio of the light entering the phosphor layer 7 from the translucent member 3 and the ratio of the light emitted from the phosphor layer 7 into the air easily decrease. Therefore, it is difficult to improve the on-axis luminous intensity of the light emitting device. On the other hand, when the thickness is less than 0.1 μm, the ratio of scattered light is likely to be reduced, and it is difficult to improve optical characteristics such as on-axis luminous intensity, luminance, and color rendering.

透光性部材3の上面および蛍光体層7の上面の算術平均粗さは、同じであってもよく、異なっていてもよい。より好ましくは、透光性部材3の上面に形成される粗面の算術平均粗さが、蛍光体層7の上面に形成される粗面の算術平均粗さよりも大きくされているのがよい。これにより、透光性部材3の上面では散乱効果を大きくして波長変換効率を良好にするとともに、蛍光体層7の上面では散乱効果を適度にすることにより放射角が大きくなるのを抑制し、光の指向性を高めて軸上光度を向上させることができる。   The arithmetic average roughness of the upper surface of the translucent member 3 and the upper surface of the phosphor layer 7 may be the same or different. More preferably, the arithmetic average roughness of the rough surface formed on the upper surface of the translucent member 3 should be larger than the arithmetic average roughness of the rough surface formed on the upper surface of the phosphor layer 7. As a result, the scattering effect is increased on the upper surface of the translucent member 3 to improve the wavelength conversion efficiency, and the emission angle is suppressed from increasing on the upper surface of the phosphor layer 7 by making the scattering effect appropriate. It is possible to improve the axial luminous intensity by increasing the directivity of light.

なお、蛍光体層7は、発光素子5から発光された光で励起された蛍光体4の電子の再結合によって青色,赤色、緑色または黄色等に発光する無機系または有機系の蛍光体4が任意の割合で配合、充填されているので、所望の発光スペクトルと色とを有する光を出力することができる。   The phosphor layer 7 is formed of an inorganic or organic phosphor 4 that emits blue, red, green, yellow, or the like by recombination of electrons of the phosphor 4 excited by light emitted from the light emitting element 5. Since it is blended and filled in an arbitrary ratio, it is possible to output light having a desired emission spectrum and color.

また、発光素子5は、放射するエネルギーのピーク波長が紫外線域から赤外線域までのいずれのものでもよいが、白色光や種々の色の光を視感性よく放出させるという観点から300乃至500nmの近紫外系から青色系で発光する素子であるのがよい。例えば、サファイア基板上にバッファ層,n型層,発光層およびp型層を順次積層した、GaN,GaAlN,InGaNまたはInGaAlN等の窒化ガリウム系化合物半導体、あるいはシリコンカーバイド系化合物半導体やZnSe(セレン化亜鉛)等で発光層が形成されたものが挙げられる。   The light emitting element 5 may have any peak wavelength of radiated energy from the ultraviolet range to the infrared range. However, from the viewpoint of emitting white light and light of various colors with good visibility, the light emitting element 5 has a wavelength of about 300 to 500 nm. It is preferable that the element emits light from ultraviolet to blue. For example, a gallium nitride-based compound semiconductor such as GaN, GaAlN, InGaN, or InGaAlN, or a silicon carbide-based compound semiconductor or ZnSe (selenide) in which a buffer layer, an n-type layer, a light-emitting layer, and a p-type layer are sequentially stacked on a sapphire substrate. Zinc) or the like in which the light emitting layer is formed.

本発明の発光装置について図1にもとづき以下に実施例を示す。   Examples of the light-emitting device of the present invention will be described below with reference to FIG.

まず、基体1となるアルミナセラミックス基板を準備した。なお、基体1は載置部1aを有しており、発光素子5が載置される載置部1aに、発光素子5と外部電気回路基板とを基体1の内部に形成した内部配線を介して電気的に接続するための配線導体を形成した。配線導体は、Mo−Mn粉末からなるメタライズ層により直径が0.1mmの円形パッドに成形されており、その表面に厚さ3μmのNiメッキ層と厚さ2μmのAuメッキ層とが順次被着された。また、基体1内部の内部配線は、貫通導体からなる電気接続部、いわゆるスルーホールによって形成された。このスルーホールについても配線導体と同様にMo−Mn粉末からなるメタライズ導体で成形された。   First, an alumina ceramic substrate to be the base 1 was prepared. The substrate 1 has a mounting portion 1a, and the mounting portion 1a on which the light emitting element 5 is mounted is connected to an internal wiring in which the light emitting element 5 and an external electric circuit board are formed inside the substrate 1. Wiring conductors for electrical connection were formed. The wiring conductor is formed into a circular pad having a diameter of 0.1 mm by a metallized layer made of Mo—Mn powder, and a 3 μm thick Ni plating layer and a 2 μm thick Au plating layer are sequentially deposited on the surface. It was. Further, the internal wiring inside the substrate 1 was formed by an electrical connection portion made of a through conductor, so-called through hole. This through hole was also formed with a metallized conductor made of Mo-Mn powder in the same manner as the wiring conductor.

さらに、基体1の上面外周部に、枠体2をAu−錫(Sn)ロウにより接合するための接合用メタライズ層を形成した。この接合用メタライズ層は、Mo−Mn粉末からなるメタライズ層の表面に厚さ3μmのNiメッキ層と厚さ2μmのAuメッキ層とが被着されたものであった。   Further, a metallization layer for bonding for bonding the frame body 2 with Au-tin (Sn) brazing was formed on the outer peripheral portion of the upper surface of the substrate 1. This bonding metallized layer was obtained by depositing a 3 μm thick Ni plating layer and a 2 μm thick Au plating layer on the surface of a metallized layer made of Mo—Mn powder.

さらにまた、アルミニウムから成る枠体2を用意した。この枠体2は、図1に示すような縦断面において、縦断面形状が、上側に向かうにともなって外側に広がったような直線状の傾斜面を有する貫通孔を有しており、この貫通孔の内周面2aの表面をRaが0.1μmの反射面とされた。   Furthermore, a frame 2 made of aluminum was prepared. The frame body 2 has a through hole having a linear inclined surface in which the longitudinal section shape spreads outward as it goes upward in the longitudinal section as shown in FIG. The surface of the inner peripheral surface 2a of the hole was a reflecting surface with Ra of 0.1 μm.

また、枠体2は、外形の直径が8mmで高さが5mmとされ、上側開口の直径が6mm、下側開口の直径が3mmの円柱状とされた。   Further, the frame body 2 was formed in a columnar shape having an outer diameter of 8 mm and a height of 5 mm, an upper opening having a diameter of 6 mm, and a lower opening having a diameter of 3 mm.

次に、載置部1a上の配線導体にAu−Sn半田を設けておき、このAu−Sn半田を介して近紫外光を発する厚さ0.08mmの発光素子5を配線導体に接合するとともに、枠体2を基体1の上面の接合用メタライズ層にAu−Snロウで接合した。   Next, Au—Sn solder is provided on the wiring conductor on the mounting portion 1 a, and the 0.08 mm thick light emitting element 5 emitting near-ultraviolet light is joined to the wiring conductor through the Au—Sn solder, The frame 2 was bonded to the bonding metallization layer on the upper surface of the substrate 1 with Au—Sn brazing.

次に、シリコーン樹脂(透光性部材3)をディスペンサーにて基体1と枠体2に囲まれた領域の枠体2の内周面2aの中段(基体1の上面からの高さが4mm)まで充填した。そして、透光性部材3の表面にアルミナの粒子を吹きつけて粗化することにより、算術平均粗さが種々の値である粗面を形成した(表1参照)。   Next, the middle stage of the inner peripheral surface 2a of the frame body 2 in the region surrounded by the base body 1 and the frame body 2 by using a dispenser with silicone resin (translucent member 3) (height from the top surface of the base body 1 is 4 mm) Until filled. And the rough surface whose arithmetic mean roughness is various values was formed by spraying the particle | grains of an alumina on the surface of the translucent member 3, and roughening it (refer Table 1).

次に、赤色発光,緑色発光,青色発光を行なう3種類の蛍光体4を含有するシリコーン樹脂(蛍光体層7)をディスペンサーにて枠体2の内周面2aの最上端から0.2mm程度を残して透光性部材3を覆うように充填し(蛍光体層7の厚みが0.8mm)、更にアルミナの粒子を吹きつけて、蛍光体層7の表面を種々の粗さの粗面(表1参照)にすることにより、サンプルとしての発光装置を作製した。   Next, a silicone resin (phosphor layer 7) containing three kinds of phosphors 4 that emit red light, green light, and blue light is removed from the uppermost end of the inner peripheral surface 2a of the frame 2 by about 0.2 mm using a dispenser. The remaining light-transmitting member 3 is filled (the phosphor layer 7 has a thickness of 0.8 mm), and further alumina particles are sprayed to make the surface of the phosphor layer 7 have various rough surfaces (tables). 1), a light emitting device as a sample was manufactured.

このサンプルについて、発光させた際の軸上強度を測定することにより、発光強度の比較を行なった。また、評価結果を表1に示す。

Figure 2005191197
For this sample, the on-axis intensity when the light was emitted was measured to compare the emission intensity. The evaluation results are shown in Table 1.
Figure 2005191197

表1の結果より、透光性部材3および蛍光体層7の上面をどちらも粗面としていないサンプル1に比べ、透光性部材3および蛍光体層7の上面を粗面とすることで軸上光度が向上することがわかった(サンプル2〜6)。さらに、透光性部材3および蛍光体層7の上面の算術平均粗さがそれぞれ0.1〜0.8μmの範囲のものは、900mcd以上もの強度を有しているとともに発光装置の中央部と外周部との色むらは観察されず優れていることがわかった。   From the results shown in Table 1, it is possible to make the axis of the light-transmitting member 3 and the phosphor layer 7 rough by comparing the upper surface of the light-transmitting member 3 and the phosphor layer 7 with the rough surface of the sample 1 in which neither of the surfaces is the rough surface. It was found that the luminous intensity was improved (Samples 2 to 6). Furthermore, the arithmetic average roughness of the upper surfaces of the translucent member 3 and the phosphor layer 7 is in the range of 0.1 to 0.8 μm, respectively, and has a strength of 900 mcd or more, and the central portion and the outer peripheral portion of the light emitting device The color unevenness was not observed and was found to be excellent.

なお、本発明は以上の実施の形態の例および実施例に限定されず、本発明の要旨を逸脱しない範囲内であれば種々の変更を行なうことは何等支障ない。例えば、放射光強度の向上のために基体1に発光素子5を複数設けてしても良い。また、内周面2aの角度や、蛍光体層7の厚さを任意に調整することも可能であり、また、蛍光体4を含む蛍光体層7の上面に更にガラス基板等の透明部材を設けることも可能であり、これにより、外部環境から保護されるために、信頼性の向上へとつながる。   It should be noted that the present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the scope of the present invention. For example, a plurality of light emitting elements 5 may be provided on the substrate 1 in order to improve the emitted light intensity. Further, the angle of the inner peripheral surface 2a and the thickness of the phosphor layer 7 can be arbitrarily adjusted, and a transparent member such as a glass substrate is further provided on the upper surface of the phosphor layer 7 including the phosphor 4. It can also be provided, and this leads to improved reliability because it is protected from the external environment.

本発明の発光装置の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the light-emitting device of this invention. 従来の発光装置を示す断面図である。It is sectional drawing which shows the conventional light-emitting device. 従来の発光装置の一例を示す断面図である。It is sectional drawing which shows an example of the conventional light-emitting device.

符号の説明Explanation of symbols

1:基体
1a:載置部
2:枠体
2a:内周面
3:透光性部材
4:蛍光体
5:発光素子
7:蛍光体層
1: Base 1a: Placement part 2: Frame body 2a: Inner peripheral surface 3: Translucent member 4: Phosphor 5: Light emitting element 7: Phosphor layer

Claims (2)

上側主面に発光素子が載置される載置部を有する基体と、該基体の上側主面の外周部に前記載置部を囲繞するように接合されるとともに内周面が前記発光素子から発光される光を反射する反射面とされている枠体と、一端が前記基体の上側主面に形成されて前記発光素子の電極に電気的に接続されるとともに他端が前記基体の外面に導出された配線導体と、前記載置部に載置されるとともに前記配線導体に電気的に接続された発光素子と、前記枠体の内側に前記発光素子を覆うように設けられている透光性部材と、該透光性部材を被覆する前記発光素子の光を波長変換する蛍光体を含有する蛍光体層とを具備しており、前記透光性部材および前記蛍光体層は、その上面が粗面とされていることを特徴とする発光装置。 A base having a mounting portion on which the light emitting element is mounted on the upper main surface, and an outer peripheral portion of the upper main surface of the base are joined so as to surround the mounting portion, and an inner peripheral surface is separated from the light emitting element. A frame body that is a reflecting surface for reflecting emitted light, one end is formed on the upper main surface of the substrate, and is electrically connected to the electrode of the light emitting element, and the other end is formed on the outer surface of the substrate. A derived wiring conductor; a light emitting element placed on the mounting portion and electrically connected to the wiring conductor; and a translucent light provided inside the frame so as to cover the light emitting element And a phosphor layer containing a phosphor that converts the wavelength of the light of the light emitting element that covers the light transmissive member, and the light transmissive member and the phosphor layer have upper surfaces thereof. A light emitting device characterized by having a rough surface. 前記透光性部材および前記蛍光体層の上面は、算術平均粗さがそれぞれ0.1乃至0.8μmであることを特徴とする請求項1記載の発光装置。 2. The light emitting device according to claim 1, wherein the translucent member and the upper surface of the phosphor layer each have an arithmetic average roughness of 0.1 to 0.8 μm.
JP2003429381A 2003-12-25 2003-12-25 Light emitting device Expired - Fee Related JP3881653B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003429381A JP3881653B2 (en) 2003-12-25 2003-12-25 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003429381A JP3881653B2 (en) 2003-12-25 2003-12-25 Light emitting device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006149682A Division JP2006229259A (en) 2006-05-30 2006-05-30 Light emitting device

Publications (2)

Publication Number Publication Date
JP2005191197A true JP2005191197A (en) 2005-07-14
JP3881653B2 JP3881653B2 (en) 2007-02-14

Family

ID=34788069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003429381A Expired - Fee Related JP3881653B2 (en) 2003-12-25 2003-12-25 Light emitting device

Country Status (1)

Country Link
JP (1) JP3881653B2 (en)

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268323A (en) * 2004-03-16 2005-09-29 Sumitomo Electric Ind Ltd Semiconductor light emitting device
JP2006237264A (en) * 2005-02-24 2006-09-07 Kyocera Corp Light emitting device and lighting apparatus
JP2007035748A (en) * 2005-07-25 2007-02-08 Nichia Chem Ind Ltd Support for mounting semiconductor element, and semiconductor device
JP2007161944A (en) * 2005-12-16 2007-06-28 Nippon Electric Glass Co Ltd Phosphor
JP2007180203A (en) * 2005-12-27 2007-07-12 Shinko Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2007227919A (en) * 2006-02-22 2007-09-06 Samsung Electro Mech Co Ltd Process for fabrication of light-emitting diode package
JP2007241113A (en) * 2006-03-10 2007-09-20 Matsushita Electric Works Ltd Optical component and illumination device using same
WO2007148829A1 (en) * 2006-06-22 2007-12-27 Ube Industries, Ltd. Composite for light conversion, light emitting device using the same, and method for controlling color tone
JP2008053702A (en) * 2006-07-26 2008-03-06 Kyocera Corp Light-emitting device, and lighting device
JP2008305936A (en) * 2007-06-07 2008-12-18 Nichia Corp Semiconductor light emitting device
JP2009060094A (en) * 2007-08-08 2009-03-19 Toshiba Lighting & Technology Corp Illuminator
JP2009130301A (en) * 2007-11-27 2009-06-11 Sharp Corp Light-emitting element and method of manufacturing the same
JP2009530437A (en) * 2006-03-15 2009-08-27 エルジー イノテック カンパニー リミテッド Phosphorescent sheet
WO2009107535A1 (en) * 2008-02-25 2009-09-03 株式会社東芝 White led lamp, backlight, light emitting device, display device and lighting device
WO2009128468A1 (en) * 2008-04-17 2009-10-22 株式会社東芝 White light-emitting device, backlight, liquid crystal display device and illuminating device
CN101577303A (en) * 2008-05-07 2009-11-11 三星电子株式会社 Light emitting diode packages, light emitting diode systems and methods of manufacturing the same
JP2010510659A (en) * 2006-11-15 2010-04-02 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Light emitting diode with textured phosphor conversion layer
KR20100089113A (en) * 2007-12-11 2010-08-11 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Side emitting device with hybrid top reflector
JP2011018949A (en) * 2006-07-27 2011-01-27 Samsung Led Co Ltd Surface-mounted light-emitting diode element
CN102237477A (en) * 2010-04-29 2011-11-09 财团法人工业技术研究院 Multilayer stack-packaged light- emitting diode
JP2011233942A (en) * 2011-08-26 2011-11-17 Fine Rubber Kenkyusho:Kk Light-emitting device and manufacturing method thereof
KR20120032780A (en) * 2010-09-29 2012-04-06 서울반도체 주식회사 Phosphor sheet, light-emitting device having the phosphor sheet and method of manufacturing the same
JP2012114462A (en) * 2006-07-26 2012-06-14 Kyocera Corp Light-emitting device, and lighting device
US8324797B2 (en) * 2007-12-17 2012-12-04 Samsung Electronics Co., Ltd. White light emitting diode and method of manufacturing the same
JP2013110439A (en) * 2006-09-29 2013-06-06 Future Light Limited Liability Company Light-emitting diode device
JP2014082404A (en) * 2012-10-18 2014-05-08 Citizen Electronics Co Ltd Light-emitting device
EP2346102A3 (en) * 2010-01-14 2014-08-06 LG Innotek Co., Ltd. Light emitting diode chip and package incorporating the same
KR101553343B1 (en) * 2014-12-15 2015-09-15 주식회사 루멘스 Light emitting device package and backlight unit
KR101775659B1 (en) * 2010-12-30 2017-09-06 서울반도체 주식회사 Light emitting device having wavelength converting layer
JP2019004191A (en) * 2018-10-11 2019-01-10 日亜化学工業株式会社 Light emitting device and method for manufacturing the same
US10454010B1 (en) 2006-12-11 2019-10-22 The Regents Of The University Of California Transparent light emitting diodes
JP2019212699A (en) * 2018-06-01 2019-12-12 日亜化学工業株式会社 Light-emitting device
JP2020107910A (en) * 2020-04-01 2020-07-09 日亜化学工業株式会社 Light emitting device and method for manufacturing the same
US10790417B2 (en) 2013-07-08 2020-09-29 Lumileds Llc Wavelength converted semiconductor light emitting device
US11430928B2 (en) 2016-05-31 2022-08-30 Nichia Corporation Light-emitting device with exposed filter particles
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Cited By (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268323A (en) * 2004-03-16 2005-09-29 Sumitomo Electric Ind Ltd Semiconductor light emitting device
US9240529B2 (en) 2004-07-06 2016-01-19 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
US9859464B2 (en) 2004-07-06 2018-01-02 The Regents Of The University Of California Lighting emitting diode with light extracted from front and back sides of a lead frame
JP2006237264A (en) * 2005-02-24 2006-09-07 Kyocera Corp Light emitting device and lighting apparatus
JP2007035748A (en) * 2005-07-25 2007-02-08 Nichia Chem Ind Ltd Support for mounting semiconductor element, and semiconductor device
JP2007161944A (en) * 2005-12-16 2007-06-28 Nippon Electric Glass Co Ltd Phosphor
JP2007180203A (en) * 2005-12-27 2007-07-12 Shinko Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2007227919A (en) * 2006-02-22 2007-09-06 Samsung Electro Mech Co Ltd Process for fabrication of light-emitting diode package
US8557617B2 (en) 2006-02-22 2013-10-15 Samsung Electronics Co., Ltd. Method of manufacturing light emitting diode package
JP2007241113A (en) * 2006-03-10 2007-09-20 Matsushita Electric Works Ltd Optical component and illumination device using same
JP2009530437A (en) * 2006-03-15 2009-08-27 エルジー イノテック カンパニー リミテッド Phosphorescent sheet
US8723411B2 (en) 2006-03-15 2014-05-13 Lg Innotek Co., Ltd. Photoluminescent sheet
US8237352B2 (en) 2006-03-15 2012-08-07 Lg Innotek Co., Ltd. Photoluminescent sheet
JP5083211B2 (en) * 2006-06-22 2012-11-28 宇部興産株式会社 Composite for light conversion, light emitting device using the same, and color tone control method
WO2007148829A1 (en) * 2006-06-22 2007-12-27 Ube Industries, Ltd. Composite for light conversion, light emitting device using the same, and method for controlling color tone
JP2012114462A (en) * 2006-07-26 2012-06-14 Kyocera Corp Light-emitting device, and lighting device
JP2008053702A (en) * 2006-07-26 2008-03-06 Kyocera Corp Light-emitting device, and lighting device
JP2011018949A (en) * 2006-07-27 2011-01-27 Samsung Led Co Ltd Surface-mounted light-emitting diode element
JP2013110439A (en) * 2006-09-29 2013-06-06 Future Light Limited Liability Company Light-emitting diode device
JP2010510659A (en) * 2006-11-15 2010-04-02 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Light emitting diode with textured phosphor conversion layer
US8860051B2 (en) 2006-11-15 2014-10-14 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
US10658557B1 (en) 2006-12-11 2020-05-19 The Regents Of The University Of California Transparent light emitting device with light emitting diodes
US10644213B1 (en) 2006-12-11 2020-05-05 The Regents Of The University Of California Filament LED light bulb
US10593854B1 (en) 2006-12-11 2020-03-17 The Regents Of The University Of California Transparent light emitting device with light emitting diodes
US10454010B1 (en) 2006-12-11 2019-10-22 The Regents Of The University Of California Transparent light emitting diodes
JP2008305936A (en) * 2007-06-07 2008-12-18 Nichia Corp Semiconductor light emitting device
JP2009060094A (en) * 2007-08-08 2009-03-19 Toshiba Lighting & Technology Corp Illuminator
JP2009130301A (en) * 2007-11-27 2009-06-11 Sharp Corp Light-emitting element and method of manufacturing the same
CN102945917A (en) * 2007-11-27 2013-02-27 夏普株式会社 Light emitting element
JP2011507256A (en) * 2007-12-11 2011-03-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Side-emitting device with hybrid top reflector
KR20100089113A (en) * 2007-12-11 2010-08-11 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Side emitting device with hybrid top reflector
KR101587573B1 (en) * 2007-12-11 2016-01-25 코닌클리케 필립스 엔.브이. Side emitting device with hybrid top reflector
US8390189B2 (en) 2007-12-17 2013-03-05 Samsung Electronics Co., Ltd. White light emitting diode and method of manufacturing the same
US8324797B2 (en) * 2007-12-17 2012-12-04 Samsung Electronics Co., Ltd. White light emitting diode and method of manufacturing the same
JP2013038447A (en) * 2008-02-25 2013-02-21 Toshiba Corp White led lamp, backlight, and illumination device
US8471283B2 (en) 2008-02-25 2013-06-25 Kabushiki Kaisha Toshiba White LED lamp, backlight, light emitting device, display device and illumination device
WO2009107535A1 (en) * 2008-02-25 2009-09-03 株式会社東芝 White led lamp, backlight, light emitting device, display device and lighting device
JPWO2009107535A1 (en) * 2008-02-25 2011-06-30 株式会社東芝 White LED lamp, backlight, light emitting device, display device, and illumination device
US10886434B2 (en) 2008-02-25 2021-01-05 Kabushiki Kaisha Toshiba White LED lamp, backlight, light emitting device, display device and illumination device
US9039218B2 (en) 2008-02-25 2015-05-26 Kabushiki Kaisha Toshiba White LED lamp, backlight, light emitting device, display device and illumination device
US8598618B2 (en) 2008-04-17 2013-12-03 Kabushiki Kaisha Toshiba White light emitting device, backlight, liquid crystal display device, and illuminating device
WO2009128468A1 (en) * 2008-04-17 2009-10-22 株式会社東芝 White light-emitting device, backlight, liquid crystal display device and illuminating device
JP5542660B2 (en) * 2008-04-17 2014-07-09 株式会社東芝 White light emitting device, backlight, liquid crystal display device and lighting device
JP2014013943A (en) * 2008-04-17 2014-01-23 Toshiba Corp White light-emitting device, backlight, liquid crystal display unit, and luminaire
JPWO2009128468A1 (en) * 2008-04-17 2011-08-04 株式会社東芝 White light emitting device, backlight, liquid crystal display device and lighting device
US7955879B2 (en) 2008-05-07 2011-06-07 Samsung Electronics Co., Ltd. Method of forming LED semiconductor device having annealed encapsulant layer and annealed luminescence conversion material layer
CN101577303A (en) * 2008-05-07 2009-11-11 三星电子株式会社 Light emitting diode packages, light emitting diode systems and methods of manufacturing the same
EP2346102A3 (en) * 2010-01-14 2014-08-06 LG Innotek Co., Ltd. Light emitting diode chip and package incorporating the same
US9136445B2 (en) 2010-01-14 2015-09-15 Lg Innotek Co., Ltd. Light emitting device chip, light emitting device package
CN102237477A (en) * 2010-04-29 2011-11-09 财团法人工业技术研究院 Multilayer stack-packaged light- emitting diode
US9705050B2 (en) 2010-09-29 2017-07-11 Seoul Semiconductor Co., Ltd. Phosphor sheet, light-emitting device having the phosphor sheet and method of manufacturing the same
KR20120032780A (en) * 2010-09-29 2012-04-06 서울반도체 주식회사 Phosphor sheet, light-emitting device having the phosphor sheet and method of manufacturing the same
KR101719655B1 (en) * 2010-09-29 2017-03-24 서울반도체 주식회사 Phosphor sheet, light-emitting device having the phosphor sheet and method of manufacturing the same
KR101775659B1 (en) * 2010-12-30 2017-09-06 서울반도체 주식회사 Light emitting device having wavelength converting layer
JP2011233942A (en) * 2011-08-26 2011-11-17 Fine Rubber Kenkyusho:Kk Light-emitting device and manufacturing method thereof
JP2014082404A (en) * 2012-10-18 2014-05-08 Citizen Electronics Co Ltd Light-emitting device
US10790417B2 (en) 2013-07-08 2020-09-29 Lumileds Llc Wavelength converted semiconductor light emitting device
KR101553343B1 (en) * 2014-12-15 2015-09-15 주식회사 루멘스 Light emitting device package and backlight unit
US11430928B2 (en) 2016-05-31 2022-08-30 Nichia Corporation Light-emitting device with exposed filter particles
JP7100246B2 (en) 2018-06-01 2022-07-13 日亜化学工業株式会社 Luminescent device
US10847687B2 (en) 2018-06-01 2020-11-24 Nichia Corporation Light-emitting device and method of manufacturing the same
JP2019212699A (en) * 2018-06-01 2019-12-12 日亜化学工業株式会社 Light-emitting device
JP2019004191A (en) * 2018-10-11 2019-01-10 日亜化学工業株式会社 Light emitting device and method for manufacturing the same
JP2020107910A (en) * 2020-04-01 2020-07-09 日亜化学工業株式会社 Light emitting device and method for manufacturing the same
JP7078863B2 (en) 2020-04-01 2022-06-01 日亜化学工業株式会社 Light emitting device and its manufacturing method
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11796163B2 (en) 2020-05-12 2023-10-24 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Also Published As

Publication number Publication date
JP3881653B2 (en) 2007-02-14

Similar Documents

Publication Publication Date Title
JP3881653B2 (en) Light emitting device
KR100978028B1 (en) Light-emitting device
JP3921200B2 (en) Light emitting device
JP4587675B2 (en) Light emitting element storage package and light emitting device
JP4443188B2 (en) Light emitting element storage package and light emitting device
JP3921474B2 (en) Light emitting device and lighting device
JP2007180430A (en) Light-emitting diode device
JP2005210042A (en) Light emitting apparatus and illumination apparatus
JP2006229259A (en) Light emitting device
JP3905078B2 (en) Light emitting device
JP3906199B2 (en) Light emitting device
JP2005310911A (en) Package for housing light emitting element, light emitting device, and lighting apparatus
JP2006237571A (en) Light-emitting diode device
JP4206334B2 (en) Light emitting device
JP2006156604A (en) Light emitting device and lighting system
JP2007173875A (en) Light emitting device
JP2005209959A (en) Package for light emitting storage and light emitting device
JP5474133B2 (en) Light emitting device
JP4614679B2 (en) LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND LIGHTING DEVICE
WO2007072659A1 (en) Light-emitting device
JP2005317592A (en) Light emitting device, package for accommodating same, and lighting apparatus
JP4000109B2 (en) Light emitting device
JP2006093612A (en) Light emitting device and illuminator
JP2006128322A (en) Light emitting device and lighting device
JP4484499B2 (en) Light emitting device

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060721

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060801

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061002

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061110

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101117

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101117

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111117

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111117

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121117

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121117

Year of fee payment: 6

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131117

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees